WO2013014790A1 - 有機エレクトロルミネッセンスデバイスおよび有機エレクトロルミネッセンスデバイスの製造方法 - Google Patents
有機エレクトロルミネッセンスデバイスおよび有機エレクトロルミネッセンスデバイスの製造方法 Download PDFInfo
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- WO2013014790A1 WO2013014790A1 PCT/JP2011/067304 JP2011067304W WO2013014790A1 WO 2013014790 A1 WO2013014790 A1 WO 2013014790A1 JP 2011067304 W JP2011067304 W JP 2011067304W WO 2013014790 A1 WO2013014790 A1 WO 2013014790A1
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- 238000005401 electroluminescence Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010410 layer Substances 0.000 claims abstract description 155
- 238000007789 sealing Methods 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000002346 layers by function Substances 0.000 claims abstract description 38
- 239000011368 organic material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 22
- 239000012790 adhesive layer Substances 0.000 claims description 16
- 239000011800 void material Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000002390 adhesive tape Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910001261 rose's metal Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000634 wood's metal Inorganic materials 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- -1 wood metal Chemical class 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Definitions
- the present invention relates to an organic electroluminescence device and a manufacturing method thereof.
- An organic electroluminescence device (hereinafter referred to as an organic EL device) is a self-luminous surface light-emitting device, and has high visibility, can be driven at a low voltage, and has a broad emission spectrum. Research into the practical use of this is being actively conducted.
- the organic EL device is configured, for example, by sequentially laminating a first electrode (anode), a hole transport layer, a light emitting layer, an electron transport layer, and a second electrode (cathode) on a glass substrate.
- An organic EL device is a device that obtains electroluminescence by current injection, and requires a larger current to flow than an electric field device such as a liquid crystal display.
- the layer thickness of the organic functional layer provided between the anode and the cathode is on the order of submicron, current leakage may occur due to minute dust or defects in the organic functional layer.
- the peripheral cell may be damaged.
- Patent Document 1 discloses that each of a plurality of pixels is provided with an electrode having a disconnection function that leads to disconnection due to an overcurrent at the time of a short circuit. A technique for blocking is described.
- Patent Document 2 describes a technique for self-repairing a short-circuit portion by applying a reverse bias voltage between electrodes to evaporate an electrode material.
- Patent Document 3 discloses a technique for repairing a short-circuited part by irradiating a laser to the short-circuited part and removing it by melting.
- An organic EL device has a sealing structure because it rapidly deteriorates due to oxygen or moisture.
- a hollow sealing structure such as a sealing can is common.
- the sealing structure that enables the device to be thinned includes a sealing structure that seals with a plate material such as a glass plate, or a thin film made of an inorganic material such as SiO 2 or SiN x and covers the entire organic EL element.
- Such a structure in which sealing is performed with a plate material or a thin film that is in close contact with the components of the device is referred to as a solid sealing structure.
- the present invention has been made in view of the above points, and in an organic electroluminescence device including a wiring having a disconnection function that leads to disconnection when an overcurrent flows, the disconnection is appropriately disconnected by overcurrent.
- An object of the present invention is to provide an organic electroluminescent device capable of preventing damage to the sealing layer due to heat and impact caused by disconnection of the wiring and recurrence of leakage due to pressing of the sealing layer, and a method for manufacturing the same.
- the organic electroluminescence device of the present invention includes a substrate, a first electrode layer provided on the substrate, an organic functional layer including an organic material provided on the first electrode layer, and the organic function A second electrode layer provided on the layer, a connection wiring provided on the substrate and connected to the first electrode layer or the second electrode layer, the first electrode layer, A sealing layer that covers the laminated structure including the second electrode layer, the organic functional layer, and the connection wiring, and the connection wiring includes a fuse portion that is broken due to an overcurrent. It is characterized by being in contact with the void layer.
- the manufacturing method of the organic electroluminescent device of the present invention includes a step of forming a first electrode layer on a substrate, a step of forming an organic functional layer containing an organic material on the first electrode layer, A step of forming a second electrode layer on the organic functional layer, and a connection having a fuse portion connected to the first electrode layer or the second electrode layer on the substrate and being disconnected by an overcurrent A step of forming a wiring, a step of forming a sealing layer so as to cover the laminated structure including the first electrode layer, the second electrode layer, the organic functional layer, and the connection wiring, and the sealing And a step of removing a portion of the stopper layer covering the upper surface of the fuse portion.
- the manufacturing method of the organic electroluminescent device of the present invention includes a step of forming a first electrode layer on a substrate, a step of forming an organic functional layer containing an organic material on the first electrode layer, A step of forming a second electrode layer on the organic functional layer, and a connection having a fuse portion connected to the first electrode layer or the second electrode layer on the substrate and being disconnected by an overcurrent A step of forming a wiring; a step of forming a bank surrounding the fuse portion; and forming a void layer having the bank as a side wall on the fuse portion, the first electrode layer, the second electrode layer,
- the method includes a step of forming an adhesive layer that covers the laminated structure including the organic functional layer and the connection wiring, and a step of forming a sealing plate on the adhesive layer.
- FIG. 2A is a plan view showing a partial configuration of the organic EL device according to Example 1 of the invention
- FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG. 2 (c) is an enlarged plan view of the fuse portion according to the embodiment of the present invention
- 3A to 3E are plan views showing a method for manufacturing an organic EL device according to Example 1 of the invention.
- FIGS. 4A to 4E are taken along lines 4a-4a, 4b-4b, 4c-4c, 4d-4d, and 4e-4e in FIGS. 3A to 3E, respectively. It is sectional drawing.
- An organic electroluminescent device includes a substrate, a first electrode layer provided on the substrate, an organic functional layer including an organic material provided on the first electrode layer, and an organic functional layer.
- the connection wiring has a fuse portion that is broken by an overcurrent, and the upper surface of the fuse portion is in contact with the gap layer. According to such a configuration, since a space is secured on the fuse portion, even if the device has a solid sealing structure, the metal constituting the fuse is scattered when an overcurrent flows through the connection wiring.
- the gap layer blocks heat and impact when the connection wiring is disconnected, the sealing layer can be prevented from being damaged and the sealing performance can be maintained.
- the disconnection portion in the fuse portion is connected by pressing from the sealing layer to prevent the leak from recurring. be able to.
- FIG. 1 is a plan view showing a configuration of an organic EL device 1 according to an embodiment of the present invention.
- 2A is an enlarged plan view showing a partial configuration of the organic EL device 1 according to the embodiment of the present invention
- FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG.
- FIG. 2C is a plan view showing an enlarged view of the fuse portion according to the embodiment of the present invention.
- the configuration excluding the insulating film 26 and the sealing layer 50 is shown for easy understanding.
- the organic EL device 1 is a display device having a so-called dot matrix type display form in which each of the plurality of organic EL elements 100 functions as a pixel. That is, on the substrate 10, the plurality of power supply wirings 22 and the plurality of second electrodes 40 are arranged so as to intersect with each other, and the organic EL element 100 is disposed in the vicinity of each of these intersections.
- Each of the organic EL elements 100 has a stacked structure in which the first electrode 20, the organic functional layer 30, and the second electrode 40 are stacked.
- the second electrode 40 extends in a direction orthogonal to the power supply wiring 22 and is commonly used for a plurality of organic EL elements.
- Driving power is supplied to each of the organic EL elements 100 via the power supply wiring 22 and the connection wiring 24.
- the organic EL device 1 is a so-called bottom emission type display device that extracts light generated in the organic functional layer 30 from the substrate 10 side.
- the substrate 10 is made of a light transmissive material such as glass.
- the first electrode 20 provided on the substrate 10 is an anode, and a conductive metal oxide having an optical transparency such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) having a thickness of about 100 nm is formed in a rectangular shape. It is formed by patterning.
- a power supply wiring 22 for supplying driving power to the organic EL element 100 is provided on the substrate 10 so as to be separated from the first electrode 20.
- connection wiring 24 electrically connects the power supply wiring 22 and the first electrode 20 on the substrate 10.
- the connection wiring 24 has a disconnection function that leads to disconnection when the current injected from the power supply wiring 22 into the organic EL element 100 becomes excessive, and blocks the short-circuit current from flowing into the organic EL element 100.
- the connection wiring 24 can be disconnected at a desired current, for example, an alloy mainly composed of tin, bismuth, lead or the like, more specifically, a solder that is a tin-based alloy, wood metal, or rose alloy , Composed of a low melting point metal such as Newton alloy.
- connection wiring 24 has a fuse portion 24a whose line width is narrower than that of the other portion, and thereby has a current withstand capability lower than that of the other portion. That is, when the organic EL element 100 is short-circuited and an overcurrent flows through the connection wiring 24, a disconnection occurs in the fuse portion 24a.
- the fuse portion can be configured by making the layer thickness of the connection wiring 24 smaller than that of other portions or using a material having a lower melting point. Since each organic EL element 100 is connected to the connection wiring 24 having the fuse portion 24a, even if a short circuit occurs in a specific organic EL element, damage is not spread to other organic EL elements. It has become.
- the organic functional layer 30 is formed by laminating a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer in this order on the first electrode 20.
- the hole injection layer is made of, for example, copper phthalocyanine (CuPc) having a thickness of about 10 nm
- the hole transport layer is made of, for example, ⁇ -NPD (Bis [N- (1-naphthyl) -N-pheny] benzidine) having a thickness of about 50 nm.
- the light emitting layer is made of, for example, Alq3 (tris- (8-hydroxyquinoline) aluminum) having a thickness of about 50 nm
- the electron injection layer is made of, for example, lithium fluoride (LiF) having a thickness of about 1 nm.
- the second electrode 40 serving as a cathode is made of, for example, Al and is provided so as to cover the organic functional layer 30.
- the second electrode 40 extends in a direction orthogonal to the extending direction of the power supply wiring 22.
- the insulating layer 26 is inserted between the second electrode 40 and the power supply wiring 22 and connection wiring 24 to electrically insulate them.
- an alloy having a relatively low work function such as Mg—Ag or Al—Li is preferable.
- the sealing layer 50 is composed of a thin film made of an inorganic material such as SiNx, SiON, SiOx, AlOx, or AlN.
- the sealing layer 50 covers the respective components of the organic EL device 1 described above and plays a role of preventing entry of oxygen and moisture from the outside.
- the sealing layer 50 is formed so as to be in close contact with the organic EL element.
- the upper surface of the fuse portion 24 a is in contact with the gap layer 60. That is, the sealing layer 50 is provided so as to avoid the fuse portion 24a, and has an opening in a portion where the fuse portion 24a is formed. The upper surface of the fuse portion 24a is exposed at this opening.
- connection wiring 24 is connected to the first electrode 20 that is an anode.
- connection wiring 24 may be connected to the second electrode 40 that is a cathode. In this case, it is necessary to form an insulating film between the connection wiring 24 and the first electrode 20.
- FIGS. 3A to 3E are plan views showing a method for manufacturing the organic EL device 1 having the above-described configuration
- FIGS. 4A to 4E are views in FIGS. 3A to 3E, respectively.
- FIG. 4 is a cross-sectional view taken along lines 4a-4a, 4b-4b, 4c-4c, 4d-4d, and 4e-4e.
- a light-transmitting conductive metal oxide such as ITO or IZO is deposited on the light-transmitting substrate 10 made of glass or the like by a sputtering method, for example, to a thickness of about 100 nm, and this is patterned into a rectangular shape by etching.
- the electrode 20 is formed (FIGS. 3A and 4A).
- a power supply wiring 22 made of a low resistance metal such as Al, Cu, Ag, Au or the like is formed on the substrate 10 at a position separated from the first electrode 20 by the same method as that for the first electrode 20.
- alloys such as tin, bismuth, lead, etc. as the main component by mask vapor deposition, etc., more specifically, tin-based alloys such as solder, low melting point metals such as wood metal, rose alloy, and Newton alloy are used.
- the connection wiring 24 is formed. Patterning is performed to form the fuse portion 24 a on the connection wiring 24. That is, the connection wiring 24 is patterned so that the line width is locally narrowed in the fuse portion 24a (FIGS. 3B and 4B).
- a photosensitive resist (or polyimide) that is a material of the insulating film 26 is applied so as to cover the surfaces of the first electrode 20, the power supply wiring 22, and the connection wiring 24. Thereafter, the photosensitive resist is patterned through exposure and development. As a result, the insulating film 26 having an opening exposing the surface of the first electrode 20 and the surface of the fuse portion 24a is formed (FIGS. 3C and 4C).
- the material of the insulating film 26 and the patterning method of the insulating film 26 are not limited to this.
- the insulating film 26 may be an inorganic material such as SiO 2 and can be patterned by a known lift-off method or an etching method using a resist mask formed by a known photolithography technique.
- the organic functional layer 30 is formed by sequentially forming a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer on the exposed first electrode 20 by an inkjet method, a mask vapor deposition method, or the like.
- the hole injection layer is made of, for example, copper phthalocyanine (CuPc) having a thickness of about 10 nm
- the hole transport layer is made of, for example, ⁇ -NPD (Bis [N- (1-naphthyl) -N-phenyl] benzidine) having a thickness of about 50 nm.
- the light emitting layer is made of, for example, Alq3 (tris- (8-hydroxyquinoline) aluminum) having a thickness of about 50 nm
- the electron injection layer is made of, for example, lithium fluoride (LiF) having a thickness of about 1 nm (FIG. 3). (C), FIG. 4 (c)).
- Al which is an electrode material
- Al is deposited in a desired pattern on the structure obtained through each of the above steps by vapor deposition using a mask having an opening corresponding to the pattern of the second electrode 40.
- the second electrode 40 connected to the organic functional layer 30 and extending in a direction perpendicular to the extending direction of the power supply wiring 22 is formed. That is, the organic functional layer 30 is sandwiched between the first electrode 20 and the second electrode 40, and the second electrode 40 is insulated from the power supply wiring 22 and the connection wiring 24 by the insulating layer 26 (FIG. 3D, FIG. 4 (d)).
- the sealing layer 50 is formed by depositing an inorganic material such as SiNx, SiON, SiOx, AlOx, AlN or the like so as to entirely cover the structure obtained through the process.
- the sealing layer 50 is formed in close contact with the organic EL element 100, and is also formed on an adhesive tape that covers the fuse portion 24a. Thereafter, the adhesive tape is peeled off, and the portion covering the fuse portion 24a of the sealing layer 50 is removed.
- an opening of the sealing layer 50 is formed on the fuse portion 24a, and as a result, a void layer 60 is formed on the fuse portion 24a. That is, the upper surface of the fuse portion 24a is exposed at the opening of the sealing layer 50 (FIGS. 2E and 3E).
- the organic EL device 1 is completed through the above steps.
- the organic EL device 1 According to the organic EL device 1 according to the present embodiment, a space is formed by the air gap layer 60 above the fuse portion 24a. Therefore, the power supply wiring 22 is caused by a short circuit between the first and second electrodes.
- the metal constituting the connection wiring 24 can be melted and evaporated with deformation and expansion, and thus the disconnection is properly achieved. be able to. Thereby, the current supply to the organic EL element 100 is interrupted. Further, since the gap layer 60 is provided on the upper surface of the fuse portion 24a, even if the connection wiring 24 is deformed or expanded in the fuse portion 24a, the sealing layer 50 is not affected.
- the heat and impact caused by the disconnection of the connection wiring 24 are blocked by the gap layer 60, so that the sealing layer 50 is not broken and the sealing performance is maintained. Is done. Further, since the fuse portion 24a and the sealing layer 50 are not in contact with each other, the disconnection portion is connected by pressing from the sealing layer 50, and the leak does not recur.
- FIG. 5 is a cross-sectional view showing a configuration of an organic EL device 2 according to Example 2 of the present invention.
- the organic EL device 2 is different from the organic EL device 1 according to the first embodiment described above in that it includes banks (partition walls) 70 surrounding the void layer 60. That is, the bank 70 covers the side surface of the opening of the sealing layer 50 that defines the gap layer 60. If the sealing layer 50 is partially removed to form the gap layer 60 and an opening is provided, oxygen or moisture may enter from the opening and the organic EL device may be deteriorated.
- the bank 70 since the bank 70 is provided so as to cover the side surface of the opening of the sealing layer 50 that defines the gap layer 60, oxygen and moisture from the opening are covered. Intrusion can be prevented.
- Other components than the bank 70 are the same as those of the organic EL device 1 according to the first embodiment.
- the organic EL device 2 is manufactured by the following process, for example.
- a connection wiring 24 having a first electrode 20, a power supply wiring 22, and a fuse portion 24a is formed on the substrate 10.
- the bank 70 is formed so as to surround the connection wiring 24 (fuse portion 24a).
- the bank 70 is formed, for example, by depositing an organic material such as photosensitive polyimide and patterning it by an exposure / development process.
- the bank 70 forms a partition surrounding the connection wiring 24 including the fuse portion 24a.
- the bank 70 can be formed on the first electrode 20 and the power supply wiring 22.
- an insulating film 26 having an opening exposing the first electrode 20 and the upper surface of the fuse portion 24a is formed.
- the organic functional layer 30 is formed on the first electrode 20.
- the second electrode 40 connected to the organic functional layer 30 and extending in a direction orthogonal to the extending direction of the power supply wiring 22 is formed.
- the upper surface of the fuse portion 24a is covered with an adhesive tape or the like, and sealed with a thin film of an inorganic material so as to entirely cover the structure obtained through the above steps by plasma CVD or the like.
- a stop layer 50 is formed.
- the sealing layer 50 is formed in close contact with the organic EL element, and is also formed on an adhesive tape that covers the fuse portion 24a. Thereafter, the adhesive tape is peeled off to remove the portion of the sealing layer 50 that covers the fuse portion 24a, and the gap layer 60 is formed on the fuse portion 24a.
- the organic EL device 2 is completed through the above steps.
- the organic EL device 2 According to the organic EL device 2 according to the present embodiment, a space is formed above the fuse portion 24a due to the presence of the gap layer 60 as in the case of the above-described first embodiment, and thus the connection wiring 24 is appropriately disconnected. In addition, since the heat and impact associated with the disconnection of the connection wiring 24 are blocked by the gap layer 60, the sealing layer 50 is not destroyed and the sealing performance is maintained. Further, since the fuse portion 24a and the sealing layer 50 are not in contact with each other, the disconnection portion is connected by pressing from the sealing layer 50, and the leak does not recur. Furthermore, since the bank 70 is provided so as to cover the side surface of the opening of the sealing layer 50 that defines the gap layer 60, it is possible to prevent the intrusion of oxygen and moisture from the opening, and the organic EL It becomes possible to improve the reliability of the device.
- FIG. 6 is a cross-sectional view showing the configuration of the organic EL device 3 according to Example 3 of the present invention.
- the organic EL device 3 is different from the organic EL devices according to Examples 1 and 2 having a sealing structure in which sealing is performed with a thin film in that the organic EL device 3 has a sealing structure in which sealing is performed with a plate-shaped sealing plate.
- connection wiring 24 having an organic EL element 100, a power supply wiring 22, and a fuse portion 24a is provided on the substrate 10.
- a sealing plate 54 made of a plate material such as a glass plate, a plastic plate, or a metal plate is provided on the substrate 10 via an adhesive layer 52.
- the adhesive layer 52 is provided so as to cover the entire area of the substrate 10 and embeds the organic EL element 100 therein.
- the bank 70 is provided so as to surround the fuse portion 24a, and prevents the adhesive layer 52 from entering the fuse portion 24a.
- a void layer 60 having the bank 70 as a side wall is formed on the fuse portion 24a. That is, the adhesive layer 52 forms a partial hollow structure in which the void layer 60 is embedded.
- the organic EL device 3 is manufactured by the following process, for example.
- a connection wiring 24 having a first electrode 20, a power supply wiring 22, and a fuse portion 24a is formed on the substrate 10.
- the bank 70 is formed so as to surround the fuse portion 24a.
- the bank 70 is formed, for example, by depositing an organic material such as photosensitive polyimide and patterning it by an exposure / development process.
- the bank 70 forms a partition surrounding the connection wiring 24 including the fuse portion 24a.
- the bank 70 can be formed on the first electrode 20 and the power supply wiring 22.
- an insulating film 26 having an opening is formed on the first electrode 20 and the fuse portion 24a.
- the organic functional layer 30 is formed on the first electrode 20.
- the second electrode 40 connected to the organic functional layer 30 and extending in a direction orthogonal to the extending direction of the power supply wiring 22 is formed.
- a sheet-like adhesive that is a material of the adhesive layer 52 is attached to the substrate 10 that has undergone the above-described steps.
- an ultraviolet curable adhesive can be used as the sheet adhesive.
- the ultraviolet curable sheet adhesive is a solid sheet at room temperature, can be liquefied and flowed by heating, and is completely cured instantaneously by irradiation with ultraviolet rays.
- the sheet-like adhesive is provided on the surface of the substrate 10 so as to form a space inside the bank 70 (that is, on the fuse portion 24a). That is, the sheet-like adhesive does not enter the inside of the bank 70 and covers the upper portion of the fuse portion 24a with a gap interposed. Thereby, a partial hollow structure is formed inside the adhesive layer 52.
- a sealing plate 54 made of a plate material such as a glass plate, a plastic plate or a metal plate is placed on the surface of the sheet adhesive. Thereafter, the adhesive is liquefied by heat treatment and then cured by ultraviolet irradiation. The organic EL device 3 is completed through the above steps.
- the adhesive layer 52 is not limited to the above-described sheet-like adhesive, and a liquid adhesive can also be used.
- a thermosetting or ultraviolet curable silicone resin adhesive that is a material of the adhesive layer 52 is applied and formed on the substrate 10 that has undergone each step by spin coating.
- the component of an adhesive agent etc. are not specifically limited.
- a partial hollow structure is formed inside the adhesive layer 52.
- the formation of the void layer 60 is facilitated by applying a liquid repellent treatment such as a fluorine plasma treatment to the inner wall of the bank 70 and the surface of the connection wiring 24 including the fuse portion 24a.
- a liquid repellent treatment such as a fluorine plasma treatment
- the sealing plate 54 is placed on the adhesive layer 52, and the liquid adhesive is cured by heat treatment or ultraviolet irradiation treatment.
- FIG. 7 is a plan view showing a configuration of the organic EL device 4 in which the arrangement of electrodes, wirings, and organic EL elements is modified.
- connection wirings 24 are connected to one of the power supply wirings 22 formed on the substrate 10.
- the plurality of connection wirings 24 are juxtaposed at equal intervals in a state of being collected at one place (or a plurality of places), and each has a fuse portion 24a as in the above embodiments.
- Each of the connection wirings 24 is connected to the first electrode 20 patterned in a strip shape.
- a strip-shaped organic functional layer 30 is also provided on the first electrode 20.
- a second electrode 40 common to the plurality of organic EL elements 100 is provided on the organic functional layer 30. The second electrode 40 extends in parallel with the extending direction of the power supply wiring 22.
- the 2nd electrode 40 is isolate
- FIG. According to such a layout in which the connection wirings 24 are gathered in one place, the fuse portions 24a can be gathered in one place, so that patterning of the sealing layer (that is, formation of the void layer) is facilitated.
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Abstract
Description
10 基板
20 第1電極
22 給電配線
24 接続配線
24a ヒューズ部
30 有機機能層
40 第2電極
50 封止層
52 接着層
54 封止板
60 空隙含有層
70 バンク
Claims (8)
- 基板と、
前記基板上に設けられた第1の電極層と、
前記第1の電極層の上に設けられた有機材料を含む有機機能層と、
前記有機機能層の上に設けられた第2の電極層と、
前記基板上に設けられて前記第1の電極層または前記第2の電極層に接続された接続配線と、
前記第1の電極層、前記第2の電極層、前記有機機能層および前記接続配線を含む積層構造体を被覆する封止層と、を含み、
前記接続配線は過電流により断線に至るヒューズ部を有し、前記ヒューズ部は空隙層と接していることを特徴とする有機エレクトロルミネッセンスデバイス。 - 前記封止層は、前記空隙層を画定する開口部を有し、
前記ヒューズの上面は前記開口部において前記封止層から露出していることを特徴とする請求項1に記載の有機エレクトロルミネッセンスデバイス。 - 前記封止層の前記開口部の側面を覆うバンクを更に有することを特徴とする請求項2に記載の有機エレクトロルミネッセンスデバイス。
- 前記封止層は、薄膜により構成されていることを特徴とする請求項1乃至3のいずれか1つに記載の有機エレクトロルミネッセンスデバイス。
- 前記封止層は、前記基板上において前記空隙層を包埋するように形成された接着層と、前記接着層の上に設けられた封止板により構成されていることを特徴とする請求項1乃至3のいずれか1つに記載の有機エレクトロルミネッセンスデバイス。
- 基板上に第1の電極層を形成する工程と、
前記第1の電極層の上に有機材料を含む有機機能層を形成する工程と、
前記有機機能層の上に第2の電極層を形成する工程と、
前記基板上に前記第1の電極層または前記第2の電極層に接続され且つ過電流により断線に至るヒューズ部を有する接続配線を形成する工程と、
前記第1および第2の電極層、前記有機機能層および前記接続配線を含む積層構造体を被覆するように封止層を形成する工程と、
前記封止層の前記ヒューズ部の上面を覆う部分を除去する工程と、を含むことを特徴とする有機エレクトロルミネッセンスデバイスの製造方法。 - 前記封止層を形成する前に前記ヒューズ部を囲むバンクを形成する工程を更に有することを特徴とする請求項6に記載の製造方法。
- 基板上に第1の電極層を形成する工程と、
前記第1の電極層の上に有機材料を含む有機機能層を形成する工程と、
前記有機機能層の上に第2の電極層を形成する工程と、
前記基板上に前記第1の電極層または前記第2の電極層に接続され且つ過電流により断線に至るヒューズ部を有する接続配線を形成する工程と、
前記ヒューズ部を囲むバンクを形成する工程と、
前記ヒューズ部上において前記バンクを側壁とする空隙層を形成しつつ前記第1の電極層、前記第2の電極層、前記有機機能層および前記接続配線を含む積層構造体を被覆する接着層を形成する工程と、
前記接着層の上に封止板を形成する工程と、を含むことを特徴とする有機エレクトロルミネッセンスデバイスの製造方法。
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JP2011548448A JP4918633B1 (ja) | 2011-07-28 | 2011-07-28 | 有機エレクトロルミネッセンスデバイスおよび有機エレクトロルミネッセンスデバイスの製造方法 |
US14/235,397 US20140246658A1 (en) | 2011-07-28 | 2011-07-28 | Organic electroluminescent device and method for manufacturing the organic electroluminescent device |
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CN111009618A (zh) * | 2019-12-18 | 2020-04-14 | 固安翌光科技有限公司 | 一种有机电致发光器件 |
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JP2001196190A (ja) * | 2000-01-14 | 2001-07-19 | Fuji Electric Co Ltd | 有機薄膜発光ディスプレイ |
JP2010147257A (ja) * | 2008-12-19 | 2010-07-01 | Nippon Seiki Co Ltd | 有機el素子 |
WO2010106638A1 (ja) * | 2009-03-17 | 2010-09-23 | パイオニア株式会社 | 有機elパネルの製造方法および有機elパネル |
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US6989806B2 (en) * | 2002-11-20 | 2006-01-24 | Osram Opto Semiconductors Gmbh | Current limiting device |
US7242141B2 (en) * | 2004-09-27 | 2007-07-10 | Osram Opto Semiconductor Gmbh | Integrated fuses for OLED lighting device |
JP4696796B2 (ja) * | 2005-09-07 | 2011-06-08 | 株式会社豊田自動織機 | 有機エレクトロルミネッセンス素子の製造方法 |
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JP2001196190A (ja) * | 2000-01-14 | 2001-07-19 | Fuji Electric Co Ltd | 有機薄膜発光ディスプレイ |
JP2010147257A (ja) * | 2008-12-19 | 2010-07-01 | Nippon Seiki Co Ltd | 有機el素子 |
WO2010106638A1 (ja) * | 2009-03-17 | 2010-09-23 | パイオニア株式会社 | 有機elパネルの製造方法および有機elパネル |
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