WO2013000607A1 - Feuille détectrice à multiplication des électrons - Google Patents

Feuille détectrice à multiplication des électrons Download PDF

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Publication number
WO2013000607A1
WO2013000607A1 PCT/EP2012/058341 EP2012058341W WO2013000607A1 WO 2013000607 A1 WO2013000607 A1 WO 2013000607A1 EP 2012058341 W EP2012058341 W EP 2012058341W WO 2013000607 A1 WO2013000607 A1 WO 2013000607A1
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WO
WIPO (PCT)
Prior art keywords
partially
film
electron multiplier
detector
multiplier detector
Prior art date
Application number
PCT/EP2012/058341
Other languages
German (de)
English (en)
Inventor
Bernd Voss
Original Assignee
Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh filed Critical Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh
Publication of WO2013000607A1 publication Critical patent/WO2013000607A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
    • H01J47/02—Ionisation chambers

Definitions

  • the invention relates to an electron multiplier detector film comprising at least one insulating film, the electron multiplier detector film having a plurality of through holes. Furthermore, the invention relates to a method for forming a Elektronenvervielpositiontiger- detector film or a method for forming a detector device.
  • One frequently used design which is used in particular in high-energy physics or particle physics, are gas-filled detectors.
  • a fast, especially electrically charged particle through a gas which is under a low pressure, leave behind the particle in the gas is a trace of ionized gas particles (which may be gas atoms and / or gas molecules, depending on the gas) and electrons ejected from the original gas particles.
  • electrodes are arranged, with whose help electric fields are generated. These cause the electrons and ions generated in the gas in a particle passage to move in the electric field toward the particle-corresponding electrode (which has the opposite charge as the respective particle).
  • different forms of electrodes are used.
  • the electrodes are in the form of a wire grid. If one determines the wires on which a charge is introduced due to the generated electrons or gas ions, one can conclude on the passage location of the particle originally passed through the detector.
  • GEM films allow good measurement results at a comparatively low price, they still have disadvantages. Thus, it would be desirable to further improve the detection accuracy of the detector films.
  • Another problem with known GEM films is the long-term stability. It has been shown that the known GEM films are not long-term stable. After some time, the insulating property of the insulating layer of the GEM film suffers, leading to sparks (erroneous measurement signals) as well as charges (and associated measurement inaccuracies). This is understandably undesirable. It is an object of the present invention to propose a prior art improved electron multiplier detector film, a prior art improved detector device, and a prior art improved process for forming an electron multiplier detector film or detector device.
  • the invention solves this problem.
  • an electron multiplier detector film having at least one insulation film, the electron multiplication detector film having a plurality of through holes be formed such that the at least one insulation film at least partially and / or at least partially from at least one non-hygroscopic material consists.
  • the inventors have found that a significant proportion of the aging problems associated with the use of heretofore known GEM films (using a copper-clad polyimide film), attributable to the insulating polyimide film.
  • polyimide films have surprisingly strong hygroscopic properties.
  • these hygroscopic properties lead to the already mentioned aging problems, which can lead, for example, to the already mentioned sparking and the formation of charges.
  • the films are usually used in vacuum or at very low pressures and in closed systems. So far, it has generally been assumed that this type of use precludes the possibility that a significant amount of water may enter the polyimide film. Accordingly, aging processes due to hygroscopic properties of polyimide films have heretofore been considered as not occurring. Accordingly, no attention has been paid to this aspect so far. However, in overcoming this technical prejudice, the inventors have looked more closely at this aspect and, to their own astonishment, have recognized the significance of this problem. Accordingly, it is proposed that the insulating layer of the electron multiplier detector film at least partially and / or at least partially consists of at least one non-hygroscopic material, the main aging process can be greatly reduced and possibly even substantially excluded.
  • an electron multiplier detector film which has at least one insulation film, the electron multiplier detector film having a plurality of through holes being formed such that at least one surface of the at least one insulation film at least partially and / or at least partially with at least one atomic charge number low-coating is provided.
  • the inventors have noted to their own astonishment that it is advantageous to deviate from the previously used, in itself advantageous coating with copper.
  • copper is basically of Advantageous to use copper for the coating of at least one surface of at least one insulating film, since copper on the one hand has excellent electrical conductivity and beyond copper (especially copper layers on polyimide films) particularly simple and advantageous, in particular applied by wet-chemical etching processes and can be structured.
  • copper on polyimide has a very good adhesive strength, especially when an additional thin adhesion promoter layer, such as a chromium layer, is provided.
  • an additional thin adhesion promoter layer such as a chromium layer
  • the inventors have been able to establish in initial experiments that copper has a sometimes clearly problematic attenuation length due to its comparatively high atomic number (ordinal number) in typical fields of application in high energy physics or particle physics (but also in other fields of application).
  • This can lead to an undesired falsification of the original state of the radiation field to be examined as the radiation to be detected passes through (eg by energy absorption, scattering, change of particle type, secondary reactions, etc.).
  • This applies in particular, but not exclusively, to operating cases in which the detector is operated in transmission.
  • the falsification of the radiation field naturally leads to a deterioration of the measurement result, which is undesirable for understandable reasons.
  • the inventors have found that by using materials having a low atomic number for the at least one coating (that is to say by forming a low-atom-count coating) it is possible to increase the quality of the measurement results in some cases significantly. As already mentioned, this often leads to a partially significant overcompensation of the processing, especially for the surface coating and / or for the insulating film induced processing problems.
  • the first experiments have shown that it is particularly advantageous if, in the case of the electron multiplier detector film, the at least one charge-low coating is at least partially and / or at least partially, preferably at least substantially composed of a material having an atomic number of ⁇ 28, preferably ⁇ 22, preferably ⁇ 13, more preferably ⁇ 6.
  • the attenuation length has proven to be significantly more advantageous than that of the previously exclusively used copper. As a result, significantly better results are usually possible.
  • the at least one charge-low coating is at least partially and / or at least partially, preferably at least substantially composed of a material taken from the group comprising carbon, Aluminum, titanium, tin and zinc.
  • the above-mentioned materials as a rule allow for particularly high-quality electron-multiplier detector films which are particularly sensitive to the measurement results.
  • the coating which is at least low in nuclear charge number, is at least partially and / or at least partially coated. at least partially formed as an electrically conductive and / or electrically semiconducting coating of a non-metal.
  • the "complete" coating ie, all material components of the coating
  • gallium arsenide or the like for example, is used as the semiconductor material are also silicon-based and / or germanium-based materials which are usually doped with suitable doping materials (which may optionally also have a high atomic number).
  • the electron multiplier detector film results when the at least one non-hygroscopic material is at least partially taken from the group of materials comprising polyimide having a high degree of crystallinity, Mylar and polypropylene.
  • the at least one non-hygroscopic material is at least partially taken from the group of materials comprising polyimide having a high degree of crystallinity, Mylar and polypropylene.
  • First experiments have shown that in particular such films have particularly preferred properties.
  • Another advantage of the materials mentioned is that such films are commercially available with sometimes large bandwidths.
  • polyimide films are generally available only with widths up to a maximum of 600 mm, which may limit the flexibility in detector construction, where appropriate, undesirable.
  • a construction of particularly high-quality and versatile detectors is possible.
  • a further advantage of the materials mentioned may be that they allow particularly advantageous processes, so that coatings can be applied to at least one surface of the at least one insulating film in a relatively simple and / or economical and / or permanent manner. Furthermore, it can prove to be advantageous if, in the case of the electron multiplier detector film, the at least one insulating film is at least partially insulated. se and / or at least partially made of at least one electrically highly insulating material. In such a case, it is possible to apply particularly high voltage differences on the two surface sides of the at least one insulating film. As a result, it is generally possible to allow a particularly large amplification effect (particularly strong follow-up electron avalanche formation).
  • the at least one insulating film has a thickness of ⁇ 200 ⁇ m, preferably -s 150 ⁇ m, preferably ⁇ 100 ⁇ m, in particular 50 ⁇ m, at least in some areas.
  • initial tests have shown that on the one hand a particularly high amplification effect is possible with the aforementioned thicknesses, since a particularly high electric field can be generated with comparatively low voltages (due to the short distance between the two voltage poles).
  • the distance between the two electrons is not so small that it (at least to a significant degree) leads to unwanted flashovers, so that it can lead to false pulses.
  • the film is at least partially formed thicker.
  • a plate-like thickness ie a relatively large thickness of in the range up to several millimeters of the film is to be considered.
  • the electron multiplier detector film is designed in such a way that it is at least partially and / or structurally structured by non-chemical structuring methods, in particular by laser structuring method, plasma etching patterning method, mask-based deposition method, sputtering method, chemical Vapor deposition process, physical vapor deposition method and / or ultrasonic structuring method is structured. Thanks to the proposed structuring and deposition techniques, it is also possible for insulation film coating surface material pairings to be realized which are not structurable or can not be landfilled when using classical wet-chemical structuring methods (in particular etching methods) and / or deposition methods. As a result, electrically particularly advantageous materials or material pairings are possible, which often are not or only extremely problematic realized in the current state of the art. This is probably a reason to see why so far electron multiplier detector films are available exclusively as copper-coated polyimide films.
  • At least one adhesion-promoting layer is formed between at least one insulating layer and at least one surface layer, which can be formed in particular from chromium (or may contain chromium). It has been shown that by providing such adhesion-promoting layers, on the one hand, the electrical properties of the resulting electron-multiplier detector film are usually not worsened or not significantly worsened. On the other hand, the mechanical properties can optionally be significantly improved by providing such adhesion promoter materials, so that, for example, it is also possible for certain material combinations to become realizable in the first place. First experiments have shown that the additional possibilities that can be realized thereby can clearly outweigh the often occurring inherent disadvantages.
  • a detector device which has at least one electron multiplier detector film with the aforementioned structure.
  • the resulting detector device then already has the described advantages and properties in an analogous manner.
  • a method of forming an electron multiplier detector film the electron multiplier detector film having a structure as described above.
  • a method for forming a detector device is proposed so that it has a structure according to the previous description.
  • the electron multiplier detector film or the resulting detector device then has the advantages and properties already described in an analogous manner.
  • the E- lektronenvervielbibtiger detector film, or the detector device in the sense of the previous description can be further developed suitable.
  • an insulation film which consists in particular at least partially and / or at least partially of at least one non-hygroscopic material, on at least one surface side at least partially and / or at least partially with a coating, in particular is provided with at least one atomic charge number low coating.
  • the coating itself may be accomplished, for example, by a Plama coating method, mask-based deposition method, chemical vapor deposition method, physical vapor deposition method, sputtering method, and the like.
  • Optionally required structuring may be by laser patterning, plasma etching patterning, ultrasound patterning, and the like.
  • FIG. 1 shows a detector with an electron multiplier foil in a schematic cross-sectional view
  • FIG. 2 shows a method for forming a detector in a schematic flowchart.
  • a detector 1 shows the construction and operation of a detector 1 comprising an electron multiplier film 2 (so-called GEM film for "gas electron multiplier” film)
  • GEM film for "gas electron multiplier” film
  • the detector 1 is placed on two sides of each of an electrode 3, 4.
  • the so-called drift electrode 3 as well as the so-called collecting electrode 4 are also surrounded by the detector 1.
  • the detector 1 is surrounded by a housing 5, inside which contains a gas mixture 6 with a usually low pressure
  • a high voltage generated by a high voltage source (not shown here in detail) is applied, namely with its positive voltage to the collecting electrode 4 and its negative voltage to the drift electrode 3.
  • an electron multiplier film 2 is arranged in the interior of the detector 1.
  • the electron multiplier film 2 has a middle insulation layer 7, and on both surface sides in each case a coating 8, 9.
  • a high voltage generated by a high voltage source (which is likewise not shown in detail) is also applied to the two coatings 8, 9.
  • a large number of relatively small diameter holes typically 20-100 pm are provided in the electron multiplier film 2.
  • a typical number of holes 10 is in the range of several 1,000 or more 10,000 holes. Due to the electrical voltage applied to the drift electrode 3 and then the collecting electrode 4, an electric field E is formed between these two electrodes 3, 4.
  • an electrical voltage is applied between the two coatings 8, 9 of the electron multiplier foil 2, the field direction corresponding to the field direction of the electric field 1 1 of the outer electrodes 3, 4.
  • the holes 10 of the electron multiplier film 2 thereby act as an electric dipole.
  • the electric field of the dipoles of the electron multiplier film 2 overlaps with the external electric field of the two outer electrodes 8, 9 to a resulting electric field 1 1, which is shown in Fig. 1.
  • the electric field 1 1 is shaped in such a way that the electric field lines 12 deform such that they "pass through” the holes 10 of the electron multiplier film 2 and also have a higher density in the area of the holes 10 (so that the electric field is increased) Field 1 1 is much stronger in this region than outside the region of holes 10.)
  • a primary electron is generated somewhere in the region of the detector 1, for example, by a high-energy particle passing through the gas mixture 6 in the housing 5 of the detector 1 splits one or more electron-ion pairs, the primary electrons thus generated will be conducted due to the electric field 1 1 opposite to the direction of the field lines 12 to the collecting electrode 4.
  • the primary electron in the direction of the electron multiplier film 2 (wird that is, the primary electron is generated in the half above in FIG. 1), it becomes it is greatly accelerated in the area of the holes 10 due to the resulting electric field 1 1, so that there is a further release of secondary electrons due to the gas mixture 6 also present in the area of the holes 10.
  • These secondary electrons can again to generate tertiary electrons, etc. In other words, an avalanche-like formation of electrons occurs.
  • the electron multiplier film 2 thus acts as an electron multiplier. The large number of electrons generated thereby can finally be tapped at the collecting electrode 4 and simply amplified by electrical amplifier circuits.
  • detectors 1 age over time and, after a certain time, have a significantly worse behavior than at the beginning.
  • the inventors have found that this is particularly due to the materials previously used for the electron multiplier film 2, namely polyimide for the insulating layer 7 and copper for the coatings 8, 9.
  • the insulating layer 7 it is proposed in particular for the insulating layer 7 to a Mylar film use. This is not hygroscopic (contrary to the previously used polyimide films).
  • the Mylar film thus does not saturate with water, and ages in other respects much slower than the previously used polyimide films.
  • the insulating layer 7 (deviating from the prior art, in which only copper is used so far) carbon, tin, titanium and aluminum.
  • Each of these materials has an improved attenuation length relative to copper, since the atomic number of each of these materials is sometimes considerably lower than that of copper. Due to the better attenuation length of the proposed materials, less unwanted distortions of the original state of the radiation field to be examined occur. Such adulteration can be caused, for example, by energy absorption, scattering, change of particle type, secondary reactions, etc. Due to the properties of said materials on the one hand and Mylar on the other hand, the previous, occurring in the prior art processing by wet-chemical processes is usually not, or usually not meaningfully possible.
  • the coating 8, 9 takes place by vacuum deposition on the insulating layer 7 by means of a plasma deposition process.
  • the structuring of the electron multiplier film 2, in particular the formation of the large number of individual holes 10, also does not take place by wet-chemical methods, but by laser drilling. In particular, laser drilling usually takes place only after the formation of the laminations 8, 9 on the insulating film.
  • FIG. 2 again shows the production method 13 in a schematic flow diagram.
  • the insulating layer 7 is provided.
  • the insulating film 7 is first provided on a first, then on a second side with a coating 8, 9, for example in the form of aluminum.
  • a coating 8, 9 for example in the form of aluminum.
  • plasma deposition methods can be used.
  • both coatings 8, 9 are applied simultaneously in a first process step.
  • the holes 10 are introduced into the electron multiplier film 2 in a structuring step 16. This can be done in particular by laser drilling.

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  • Measurement Of Radiation (AREA)

Abstract

Feuille détectrice à multiplication des électrons (2) qui comporte une feuille isolante (7) pourvue d'une pluralité de trous métallisés (10). La feuille isolante (7) est constituée au moins en partie et/ou au moins par endroits d'un matériau non hygroscopique.
PCT/EP2012/058341 2011-06-30 2012-05-07 Feuille détectrice à multiplication des électrons WO2013000607A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011051472A DE102011051472A1 (de) 2011-06-30 2011-06-30 Elektronenvervielfältigende Detektorfolie
DE102011051472.4 2011-06-30

Publications (1)

Publication Number Publication Date
WO2013000607A1 true WO2013000607A1 (fr) 2013-01-03

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015032401A (ja) * 2013-07-31 2015-02-16 富士フイルム株式会社 ガス電子増倍器およびガス電子増倍装置
CN112987078A (zh) * 2021-02-10 2021-06-18 散裂中子源科学中心 一种基于陶瓷gem膜的密闭中子探测器及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006115249A1 (fr) * 2005-04-25 2006-11-02 The University Of Tokyo Amplificateur électronique de gaz, procédé de fabrication idoine, et détecteur de radiation utilisant l’amplificateur électronique de gaz
EP0948803B1 (fr) 1997-10-22 2006-11-08 European Organization for Nuclear Research Detecteur de rayonnements a tres haute performance
WO2007061235A1 (fr) * 2005-11-23 2007-05-31 Changwon National University Industry Academy Cooperation Corps. Appareil pour photodetecteur d'imagerie numerique utilisant un multiplicateur d'electrons dans le gaz
FR2912837A1 (fr) * 2007-02-20 2008-08-22 Ensmse Dispositif de multiplication des electrons et systeme de detection de rayonnements ionisants
US20080251732A1 (en) 2004-02-03 2008-10-16 Louis Dick Radiation Detector
WO2009068887A2 (fr) * 2007-11-30 2009-06-04 Micromass Uk Limited Détecteur de gaz à multiplicateur d'électrons
WO2009127220A1 (fr) 2008-04-14 2009-10-22 Cern - European Organization For Nuclear Research Technology Transfer Group Procédé de fabrication d'un multiplicateur d'électrons à gaz

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891166B2 (en) * 2002-07-02 2005-05-10 Ray Therapy Imaging Ab Multi-layered radiation converter
JP5022611B2 (ja) * 2006-03-02 2012-09-12 独立行政法人理化学研究所 ガス電子増幅フォイルの製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0948803B1 (fr) 1997-10-22 2006-11-08 European Organization for Nuclear Research Detecteur de rayonnements a tres haute performance
US20080251732A1 (en) 2004-02-03 2008-10-16 Louis Dick Radiation Detector
WO2006115249A1 (fr) * 2005-04-25 2006-11-02 The University Of Tokyo Amplificateur électronique de gaz, procédé de fabrication idoine, et détecteur de radiation utilisant l’amplificateur électronique de gaz
WO2007061235A1 (fr) * 2005-11-23 2007-05-31 Changwon National University Industry Academy Cooperation Corps. Appareil pour photodetecteur d'imagerie numerique utilisant un multiplicateur d'electrons dans le gaz
FR2912837A1 (fr) * 2007-02-20 2008-08-22 Ensmse Dispositif de multiplication des electrons et systeme de detection de rayonnements ionisants
WO2009068887A2 (fr) * 2007-11-30 2009-06-04 Micromass Uk Limited Détecteur de gaz à multiplicateur d'électrons
WO2009127220A1 (fr) 2008-04-14 2009-10-22 Cern - European Organization For Nuclear Research Technology Transfer Group Procédé de fabrication d'un multiplicateur d'électrons à gaz

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015032401A (ja) * 2013-07-31 2015-02-16 富士フイルム株式会社 ガス電子増倍器およびガス電子増倍装置
CN112987078A (zh) * 2021-02-10 2021-06-18 散裂中子源科学中心 一种基于陶瓷gem膜的密闭中子探测器及其制作方法

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