WO2012174751A1 - 一种混合多光谱感光象素组、感光器件、及感光系统 - Google Patents
一种混合多光谱感光象素组、感光器件、及感光系统 Download PDFInfo
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- WO2012174751A1 WO2012174751A1 PCT/CN2011/076335 CN2011076335W WO2012174751A1 WO 2012174751 A1 WO2012174751 A1 WO 2012174751A1 CN 2011076335 W CN2011076335 W CN 2011076335W WO 2012174751 A1 WO2012174751 A1 WO 2012174751A1
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
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Definitions
- the present invention relates to the field of light sensing, and in particular to a hybrid multi-spectral photosensitive pixel group, a photosensitive device, and a photosensitive system.
- the present invention is a multi-spectral photosensitive device and a method for fabricating the same according to the present inventors.
- the inventions listed above mainly relate to a manufacturing, reading method and system for a multi-spectral photosensitive chip mainly composed of a semiconductor.
- These new technologies and inventions while greatly improving the performance and application of semiconductor light-sensing devices, are still subject to two basic limitations of the semiconductor light-sensing devices themselves: (1) The bandgap is relatively small, so that infrared sensing is affected. Great limitations; (2) The quantum efficiency of semiconductors is only about 50%.
- the quantum dot sensitized pixels mentioned in this application are actually a special case of the more generalized electrolessly-coated photosensitive pixels.
- the idea of electroless-coated sensitized pixels is basically applied to the electroless plating plus bias, and then by light.
- the illumination causes the exit of free electrons (or voids), and the free electrons (or voids) are biased to the surface of the coating to generate charge accumulation, thereby achieving sensitization.
- a filter film and an additional semiconductor read layer are required, and the use of the filter film limits the photosensitivity of the electroless plate photosensitive device. Therefore, there are more advanced preferred implementation methods to achieve better sensitization.
- the technical problem to be solved by the present invention is to provide a hybrid multi-spectral photosensitive pixel group, a photosensitive device, and a photosensitive system, which combine the advantages of a semiconductor (CCD or CMOS) photosensitive device and an electroless plating (such as a quantum film) photosensitive device.
- CMOS complementary metal-oxide-semiconductor
- electroless plating such as a quantum film
- the present invention adopts the following technical solutions:
- a hybrid multispectral photosensitive pixel group comprising at least one electroless photosensitive pixel and at least one semiconductor photosensitive pixel.
- the photosensitive pixel group, at least one of the electroless plate photosensitive pixels and at least one of the semiconductor photosensitive pixels are disposed on a same plane.
- the photosensitive pixel group, at least one of the electroless plate photosensitive pixels and at least one of the semiconductor photosensitive pixels are arranged in a top and bottom structure.
- the photosensitive pixel group at least one of the electroless plate photosensitive pixels is disposed over at least one of the semiconductor photosensitive pixels.
- the photosensitive pixel group at least one of the electroless plate photosensitive pixels is disposed under at least one of the semiconductor photosensitive pixels.
- the photosensitive pixel group, the electroless plate photosensitive pixel and the semiconductor photosensitive pixel are each, and the electroless plate photosensitive pixel is disposed on the semiconductor photosensitive pixel.
- the electroless plate photosensitive pixel is disposed on the semiconductor photosensitive pixel.
- the electroless plating film has two photosensitive pixels, and the semiconductor photosensitive pixels are one, and the semiconductor photosensitive pixels are stacked above, between, or below the two electroless photosensitive pixels; or
- the semiconductor photosensitive pixels are two, the electroless plating photosensitive pixels are one, and the chemical coating photosensitive pixels are arranged above, between, or below the two semiconductor photosensitive pixels; or
- the electroless plating photosensitive pixel and the semiconductor photosensitive pixel are each two, and one of the two electroless photosensitive pixels is disposed above the two semiconductor photosensitive pixels, and the other is disposed at the Below the two semiconductor photosensitive pixels; or one of the two electroless photosensitive pixels Arranged above the two semiconductor photosensitive pixels, the other is disposed between the two semiconductor photosensitive pixels; or one of the two electroless photosensitive pixels is disposed on the two semiconductors Below the photosensitive pixel, the other is disposed between the two semiconductor photosensitive pixels; or, the electroless plating photosensitive pixel is one, the semiconductor photosensitive pixels are three, the electroless plating photosensitive image
- the elements are arranged above or below the three semiconductor photosensitive pixels.
- the photosensitive pixel group, at least one of the electroless plated photosensitive pixels or at least one of the semiconductor photosensitive pixels are front side photosensitive pixels, back side photosensitive pixels, or two-way photosensitive Pixel.
- the photosensitive selection mode is isolation and timing, and time division. Select, partition, or pixel selection.
- the photosensitive pixel group, the electroless plate photosensitive pixel and the semiconductor photosensitive pixel respectively sense a complementary segment of ultraviolet, visible, near infrared, and far infrared or The sub-spectral segment; or the electrolessly-coated photosensitive pixel and the semiconductor photosensitive pixel respectively sense one orthogonal segment or sub-spectral segment of ultraviolet, visible, near-infrared, and far-infrared.
- a hybrid multispectral light-sensing device proposed by the present invention comprises at least one electroless plating photosensitive pixel and at least one semiconductor photosensitive pixel.
- the photosensitive device, at least one of the electroless plate photosensitive pixels and at least one of the semiconductor photosensitive pixels are disposed on a same plane.
- the photosensitive device includes at least two photosensitive pixel layers, and at least one of the electroless plated photosensitive pixels is disposed in one of the at least two photosensitive pixel layers. At least one of the semiconductor photosensitive pixels is disposed at the other one of the at least two photosensitive pixels.
- the photosensitive pixel layer comprises at least one electroless photosensitive pixel layer and one semiconductor photosensitive pixel layer.
- the photosensitive device at least one of the electroless plated photosensitive pixel layers is disposed over at least one of the semiconductor photosensitive pixel layers.
- the photosensitive device at least one of the electroless plated photosensitive pixel layers is disposed under at least one of the semiconductor photosensitive pixel layers.
- the photosensitive device in the photosensitive device, at least one of the electrolessly plated photosensitive pixel layers has a pixel arrangement position corresponding to a pixel arrangement position of at least one of the semiconductor photosensitive pixel layers.
- the photosensitive device of the same position but different layers respectively senses a complementary segment or sub-segment of ultraviolet, visible, near-infrared, and far-infrared; Or respectively sensing an orthogonal segment or a sub-segment including ultraviolet, visible, near-infrared, and far infrared.
- the complementary spectral segment or sub-segment includes ultraviolet spectrum, blue spectrum, green spectrum, red spectrum, near-infrared spectrum, far-infrared spectrum, cyan spectrum, Yellow spectrum, white spectrum, near infrared spectrum + far infrared spectrum, red spectrum
- the orthogonal spectral segment or sub-spectral segment includes ultraviolet spectrum, blue spectrum, green spectrum, red spectrum, near-infrared spectrum, far infrared spectrum, cyan spectrum, yellow spectrum, white spectrum, near red i i "+i ⁇ i ⁇ i ", i "+i ⁇ hi ", ⁇ +i ⁇ ⁇ i "+i ⁇ i ⁇ , yellow spectrum + near-infrared spectrum, yellow spectrum + near-infrared spectrum + far-infrared spectrum, visible spectrum + near-infrared spectrum + far-infrared spectrum, ultraviolet spectrum + visible spectrum, ultraviolet spectrum + visible spectrum + near-infrared spectrum, ultraviolet spectrum + visible spectrum + near-infrared spectrum, ultraviolet spectrum + visible spectrum + near-infrared spectrum + far infrared spectrum.
- the color arrangement in each photosensitive pixel layer includes the same arrangement, horizontal arrangement, vertical arrangement, diagonal arrangement, generalized bay-leaf arrangement, YUV422 arrangement, and lateral YUV422. Arrangement, honeycomb arrangement, uniform arrangement.
- At least one of the electroless plated photosensitive pixels or at least one of the semiconductor photosensitive pixels is a front side photosensitive pixel, a back side photosensitive pixel, or a bidirectional photosensitive pixel. .
- the photosensitive direction selection mode is isolation selection and time division selection. , partition selection, or pixel selection.
- the photosensitive device, at least one of the electroless plated photosensitive pixel layer and at least one of the semiconductor photosensitive pixel layers are disposed on a substrate; comprising: the photosensitive device is a single a double-layer photosensitive device comprising an electroless plated photosensitive pixel layer and a semiconductor photosensitive pixel layer, wherein the electroless plated photosensitive pixel layer and the semiconductor photosensitive pixel layer are disposed on a top surface or a bottom surface of the substrate; or ,
- the photosensitive device is a double-sided double-layer photosensitive device comprising an electroless plated photosensitive pixel layer and a semiconductor photosensitive pixel layer, wherein the electroless plated photosensitive pixel layer is disposed on a top surface of the substrate Or a bottom surface, the semiconductor photosensitive pixel layer is disposed on a bottom surface or a top surface of the substrate; or, the photosensitive device is a single-sided three-layer photosensitive device, comprising an electroless plated photosensitive pixel layer and two semiconductor photosensitive pixels a layer, the electroless plate photosensitive layer and the two semiconductor photosensitive pixel layers are disposed on a top surface or a bottom surface of the substrate; or
- the photosensitive device is a double-sided three-layer photosensitive device comprising an electroless plated photosensitive pixel layer and two semiconductor photosensitive pixel layers, and the electroless plated photosensitive pixel layer is disposed on a top surface or a bottom surface of the substrate, Two semiconductor photosensitive pixel layers are disposed on a bottom surface or a top surface of the substrate, or one of the two semiconductor photosensitive pixel layers is disposed on a top surface of the substrate, and the other is disposed on a bottom surface of the substrate Or,
- the photosensitive device is a double-sided three-layer photosensitive device comprising two electroless photosensitive pixels and a semiconductor photosensitive pixel layer, one of the two electroless photosensitive pixel layers being disposed on a top surface of the substrate The other is disposed on a bottom surface of the substrate, and the semiconductor photosensitive pixel layer is disposed on a top surface or a bottom surface of the substrate; or
- the photosensitive device is a double-sided four-layer photosensitive device comprising two electroless photosensitive pixels and two semiconductor photosensitive pixels, and the two semiconductor photosensitive pixels are on the bottom or top surface of the substrate.
- One of the two electrolessly coated photosensitive pixel layers is above the top surface, the other is below the bottom surface, or the two electrolessly coated photosensitive pixel layers are on the top or bottom surface of the substrate, the two One of the semiconductor photosensitive pixel layers is above the top surface and the other is below the bottom surface; or the photosensitive device is a double-sided four-layer photosensitive device comprising an electroless plated photosensitive pixel layer and three semiconductor photosensitive pixels a layer, the electroless plated photosensitive pixel layer is on a top surface or a bottom surface of the substrate, one of the three semiconductor photosensitive pixel layers is on a top surface or a bottom surface of the substrate, and the other two are on the substrate Bottom or top surface; or,
- the photosensitive device is a double-sided five-layer photosensitive device comprising two electroless photosensitive pixel layers and three semiconductor photosensitive pixel layers, one of the two electroless photosensitive pixels layers being on the top surface of the substrate The other one is on the bottom surface of the substrate, one of the three semiconductor photosensitive pixel layers is on the top or bottom surface of the substrate, and the other two are on the bottom surface or the top surface of the substrate; or
- the photosensitive device is a double-sided six-layer photosensitive device comprising two electroless photosensitive pixels and four semiconductor photosensitive pixels, and one of the two electroless photosensitive pixels is on the top surface of the substrate The other is on the bottom surface of the substrate, two of the four semiconductor photosensitive pixel layers are on the top surface of the substrate, and the other two are on the bottom surface of the substrate.
- At least one of the electroless plate photosensitive pixel layers is disposed on one substrate, and at least one of the semiconductor photosensitive pixel layers is disposed on another substrate.
- the photosensitive device, the photosensitive pixel layer that senses light having a shorter wavelength is a photosensitive pixel layer closer to the light source.
- the photosensitive device further includes a filter film disposed on a photosensitive pixel layer closest to the light source or disposed at a farthest distance from the light source.
- the frequency selective characteristics of the filter film include infrared cutoff Filter, blue bandpass, green bandpass, red bandpass, cyan bandpass, yellow bandpass, magenta bandpass, cyan plus infrared ribbon pass, yellow plus infrared ribbon pass, magenta plus infrared ribbon pass, Or visible bandpass.
- two adjacent layers of the photosensitive pixel layer are respectively provided with a reading circuit; or two adjacent layers of the photosensitive pixel layer are shared and read. Circuit.
- the reading circuit is an active pixel reading circuit, a passive pixel reading circuit, or a reading circuit in which an active pixel and a passive pixel are mixed.
- the active pixel comprises 3T, 4 ⁇ , 5 ⁇ or 6 ⁇ active pixels.
- the sharing method of the reading device includes a single layer or a four-point sharing mode of the upper and lower layers, a single layer or a 6-point sharing mode of the upper and lower layers, a single layer or upper and lower layers. 8-point sharing mode, or single-layer or upper-level layer sharing mode.
- the reading circuit includes an adjacent parallel row, a different row, or a different row in a pixel array for each photosensitive pixel layer. Performing two-two combined sampling between pixels of different columns to obtain a first merging unit of sample data of the first merging pixel; and combining sampling data for obtaining the first merging pixel obtained by the first merging unit to obtain A second merging unit of sample data of the second merged pixel.
- the reading device further includes a third merging unit, configured to perform merging sampling data of the second merging pixel obtained by the second merging unit to obtain The sampled data of the third merged pixel.
- the pixels of the first merging unit or the second merging unit are combined in a manner of charge addition or different color pixels between pixels of the same or different colors.
- the color space conversion comprises: RGB to CyYeMgX space transform, RGB to YUV space transform, or CyYeMgX to YUV space transform, where X is R (red) ), G (green), B (blue).
- the charge addition manner is performed by directly connecting pixels in parallel or transferring charges simultaneously into a reading capacitor (FD).
- the color-based combined sampling mode of the first merging unit or the second merging unit includes a same color combining mode, a different color combining mode, a hybrid combining mode, or a selection.
- Suppressing the superimposed color combination mode, and the first merging unit and the second embodiment of the present invention, the photosensitive device, the first merging unit or the second merging unit, the location-based combined sampling method includes At least one of the following ways: automatic averaging of signals output directly to the bus, skipping or skipping, and sample-by-sampling.
- the combined sampling mode of the third merging unit comprises: at least one of a color space conversion mode and a back end digital image scaling mode.
- the electroless plated photosensitive pixel comprises a quantum dot photosensitive pixel.
- the photosensitive device, the semiconductor photosensitive pixel comprises a CMOS photodiode, a CMOS photosensitive gate, a CCD photodiode, a CCD photosensitive gate, and a CMOS and CCD sensing with two-way charge transfer function. Diode and photoreceptor.
- a hybrid multi-spectral photosensitive system proposed by the present invention is implemented using the above-described photosensitive device.
- Electroless plating Photosensitive pixels have the advantage of high sensitivity (especially the infrared portion) and easy surface processing, but require additional semiconductor read layers and filter films (for color). While semiconductor photosensitive pixels do not require an additional semiconductor read layer, they have a balance between sensitivity and fabrication difficulty.
- the invention can complement each other, and does not need to provide an additional semiconductor read layer and filter film, and does not increase the difficulty of fabricating the semiconductor photosensitive pixels, and has high sensitivity, so that sufficient
- they can simultaneously obtain a large number of color signals and other spectral signals, which can maximize the utilization of the energy of incident photons, reach or approach the theoretical upper limit of photoelectric conversion efficiency, and can completely reconstruct color while , obtain images of other spectra, including ultraviolet images, near-infrared images, and far-infrared images.
- Fig. 1 is a novel photosensitive device using a quantum photosensitive film as described in U.S. Patent Application Serial No. PCT/US2008/060947. Note that in this figure, a quantum photosensitive film is the core of this invention. The quantum photosensitive film is actually a kind of chemical material photosensitive film, and this material is not unique. With the advancement of science and technology, there will be more advanced chemical materials in the future.
- FIG. 2 is a schematic view showing the pixel structure of a quantum photosensitive film photosensitive device. It is noted that the electrode in contact with the quantum photosensitive film uses rare and expensive gold.
- Figure 3 is a schematic illustration of the construction and electrical connections of a single enclosed photosensitive pixel fabricated from a quantum dot material.
- Fig. 4 is a schematic view showing the arrangement of a photosensitive member using a (single layer) quantum photosensitive film on a semiconductor substrate and a device structure. It is noted that the semiconductor substrate mainly provides a transfer circuit without providing a photosensitive pixel.
- Figure 5 shows the spectral response curves of several excellent quantum dot photographic materials. It is noted that small-sized quantum dots do not respond well to light with wavelengths above 700 nm, while large-size quantum dots do not respond well to light with wavelengths below 700 nm.
- Figure 6 is a schematic diagram of a spectral distribution.
- Visible light generally refers to light having a wavelength of 390 nm to 760 nm.
- the blue light wavelength seen by the prism is 440 - 490 legs
- the green wavelength is 520 - 570nm
- the red wavelength is 630 _ 740nm.
- 390 _ 500nm is generally divided into blue.
- the 500_610 legs are divided into green areas
- the 610_760nm is divided into red areas, but the division of the red, green and blue segments is not absolute.
- the red, green, blue, cyan, and yellow waveforms in the figure are the ideal wavelength response curves required for primary color sensitive pixels or complementary color (composite color) photosensitive pixels. Otherwise, it is difficult to reconstruct human beings. Part of the color.
- Figure 7 is a 3T read circuit of a quantum dot photosensitive pixel. This circuit is very similar to a conventional semiconductor 3T circuit.
- Figure 8 is a 4T read circuit of a quantum dot photosensitive pixel. This circuit is very similar to a conventional semiconductor 4T circuit.
- Figure 9 is a diagram showing a method of realizing a multilayer quantum photosensitive film photosensitive device proposed in U.S. Patent Application Serial No. PCT/US2008/060947. It should be noted that the implementation of two or more photosensitive devices is very difficult, and practice has proved that there is no competition in terms of cost and performance.
- Figure 10 is a conventional semiconductor (CMOS and CCD) 4T read circuit. This is very similar to Figure 8. The similarity of such read circuits makes it possible to mix multi-spectral photosensitive devices.
- CMOS and CCD complementary metal-oxide-semiconductor
- Figure 11 is my own “a multi-spectral photosensitive device and its sampling method” (China Application No.: 200910105948. 2) and "a photosensitive device and its reading method, reading circuit” (China Application No.: 200910106477. 7 The proposed four-point shared read circuit.
- Figure 12 is my own “a multi-spectral photosensitive device and its sampling method” (China Application No.: 200910105948. 2) and "a photosensitive device and its reading method, reading circuit” (China Application No.: 200910106477. 7 The proposed two-layer six-point shared read circuit.
- Figure 13 is my own “a multi-spectral photosensitive device and its sampling method” (China Application No.: 200910105948. 2) and "a photosensitive device and its reading method, reading circuit” (China Application No.: 200910106477. 7 The proposed two-layer eight-point shared read circuit.
- Fig. 14 is an arbitrary N-point shared reading circuit proposed by myself in "A photosensitive device and its reading method, reading circuit" (China Application No.: 200910105948. 2).
- Figure 15 is a double-sided double-layer multispectral proposed in "Multispectral Photosensitive Device and Its Manufacturing Method” (China Application No.: 200810217270. 2) and “Multi-Optical Sensing Device” (China Application No.: 200910105372.X) Schematic diagram of the photosensitive device.
- Figure 16 is another double-sided double proposed in "Multispectral Photosensitive Device and Its Manufacturing Method” (China Application No.: 200810217270. 2) and “Multi-Optical Sensing Device” (China Application No.: 200910105372.
- X Schematic of a layered multispectral photosensitive device. This double-sided, two-layer, multispectral sensor uses a cellular pixel arrangement.
- Figure (a) - (d) is a schematic diagram of a two-layer hybrid multi-spectral photosensitive device proposed by the present invention, wherein one layer uses a chemical photosensitive material (such as a quantum photosensitive film) as a photosensitive pixel layer, and the other layer uses a semiconductor photosensitive diode (or the photosensitive door) is a photosensitive pixel layer, such as a CCD or CMOS photosensitive pixel layer.
- Figure 17 (a), (c) is different from Figure 17 (b), (d) in that the semiconductor photosensitive pixels are used.
- BSI backs ide il luminate ion
- FSI front s ide il luminate
- Figure 18 is the author of the "Multispectral Photosensitive Device and Its Manufacturing Method” (Chinese Application No.: 200810217270. 2) and “Multi-Optical Sensing Device” (China Application No.: 200910105372.
- X Schematic representation of a two-layer photosensitive device that is complementary or orthogonal to the spectrum of interest. This type of photosensitive device can obtain a very good double-layer photosensitive device by using carefully selected color patterns and arrangements. These sensors can be used for front side sensing, back side sensing, and two-way sensing. These methods and principles are equally applicable to hybrid multispectral light sensitive devices.
- Fig. 19 is a subsampling method for realizing charge combining between pixels of different colors, which is proposed in "Multi-spectral Photosensitive Device and Sampling Method" (Chinese Application No.: 200910105948. 2). This method is equally applicable to hybrid multispectral light sensitive devices.
- Figure 20 is a pixel merging and subsampling method implemented by color space transform proposed in "Multi-spectral Photosensitive Device and Sampling Method" (Chinese Application No.: 200910105948. 2).
- Figure 21 is a simultaneous use of active pixels and passive pixels to read photosensitive pixel signals, which is proposed in "A Photosensitive Device and Its Reading Method, Reading Circuit” (China Application No.: 200910106477. 7). Read the circuit.
- the advantage of this approach is that it greatly expands the dynamic range of the sensor and doubles the power consumption of the image preview.
- This hybrid read circuit is especially useful in highly sensitive hybrid multispectral photosensors.
- Figure 22 is an implementation of the time-divisional selection of the bidirectional photosensitive device proposed by the "Multispectral Photosensitive Device” (China Application No.: 200910105372.X). This approach is equally applicable to mixed multispectral sensors.
- Figures 23(a) and (b) are two schematic views of the implementation of the pixel aligning of the bidirectional photosensitive device proposed by the "Multispectral Photosensitive Device” (China Application No.: 200910105372.X). This approach is equally applicable to hybrid multispectral light sensitive devices.
- Figure 24 is a schematic illustration of the implementation of a multilayer photosensitive pixel of a three-layer hybrid multispectral photosensitive device. This implementation uses an electrolessly plated photosensitive pixel layer, two semiconductor pixel layers. It is also possible to sandwich a layer of semiconductor pixels with two electrolessly coated photosensitive pixel layers.
- Fig. 25 is a schematic diagram showing a sampling control circuit for describing a pixel merging and sub-sampling method proposed in the invention in "Multi-spectral photosensitive device and sampling method thereof" (China Application No.: 200910105948. 2). This novel method of pixel merging and subsampling will also be used in the present invention. detailed description
- This invention relates to the design, fabrication, and system use of photosensitive devices, particularly large array high performance multi-spectral photosensitive devices.
- the invention combines novel quantum dot photosensitive film or other possible chemical coating photosensitive pixel technology and mature semiconductor photosensitive chip technology, and invents a new hybrid photosensitive device and system thereof, which combines semiconductor (CCD or CMOS) photosensitive device And the advantages of electroless plating (such as quantum film) photosensitive devices in order to obtain a theoretical limit multispectral photosensitive device that achieves or nearly achieves light use efficiency.
- a hybrid multi-spectral photosensitive pixel set comprising at least one electrolessly plated photosensitive pixel and at least one semiconductor photosensitive pixel.
- the above-mentioned photosensitive pixel group can arrange at least one electroless plate photosensitive pixel and at least one semiconductor photosensitive pixel on the same plane, which will form a planar mixed photosensitive pixel.
- a photosensitive pixel group is also provided, wherein at least one electroless photosensitive pixel and at least one semiconductor photosensitive pixel are arranged in a top and bottom structure, which will form a layered mixed photosensitive pixel.
- the method of describing the electrolessly-coated photosensitive pixels is not limited to the fact that the electrolessly-coated photosensitive pixels are above the upper and lower structures, but only for the text, as will be seen below, the electroless photosensitive image
- the prime and the semiconductor photosensitive pixels which one is above and which is below can be arbitrarily set as needed.
- the upper and lower structures described herein are arranged such that the photosensitive surface of the photosensitive pixel is horizontally placed, and the light source is vertically irradiated from above or below.
- the upper and lower structures in this paper actually have a broader meaning, that is, for example, the photosensitive surface is placed vertically, the light source is vertically irradiated to the photosensitive surface from the left side or the right side, or the front side or the rear side is so-called upper and lower structures. Equivalent to the front and rear structure or the left and right structure.
- a structure in which the electroless photosensitive pixels and the semiconductor photosensitive pixels are arranged in parallel at different levels in a certain direction is defined.
- At least one of the electroless plating photosensitive pixels may be disposed over at least one of the semiconductor photosensitive pixels. It is also possible that at least one of the electroless plate photosensitive pixels is disposed under at least one of the semiconductor photosensitive pixels.
- the top and bottom positions for example:
- the difference between the coating film and the sensation of each of the coatings is one, and the coating film is felt. Placed above or below the semiconductor photosensitive pixel;
- the electroless plating photosensitive pixel and the semiconductor photosensitive pixel are each two, and one of the two electroless photosensitive pixels is disposed above the two semiconductor photosensitive pixels, and the other is disposed under the two semiconductor photosensitive pixels; Or one of the two electroless photosensitive pixels is disposed above the two semiconductor photosensitive pixels, the other is disposed between the two semiconductor photosensitive pixels; or one of the two electroless photosensitive pixels is disposed in two Below the semiconductor photosensitive pixels, the other is disposed between two semiconductor photosensitive pixels, and the like.
- a two-layer hybrid multi-spectral photosensitive pixel which comprises an electroless plated photosensitive pixel and a semiconductor photosensitive pixel; an electroless plated photosensitive pixel and a semiconductor photosensitive pixel are disposed above and below.
- the electrolessly plated photosensitive pixels can be placed above or below the semiconductor photosensitive pixels.
- the semiconductor photosensitive pixels can only sense 4 ⁇ less near-infrared light. Therefore, when infrared is required, the electroless-coated photosensitive pixels should be below the semiconductor photosensitive pixels ( That is, away from the light source).
- Electrolessly coated photosensitive pixels can be realized with quantum coated photosensitive pixels.
- Bidirectional charge transfer can be proposed by using CMOS photodiode, CMOS photoreceptor, CCD photodiode, CCD photoreceptor, and "a photosensitive device and its reading method, reading circuit" (China Application No.: 200910106477. 7) Functional CMOS and CCD photodiodes and photoreceptors for semiconductor sensitive pixels.
- the electrolessly coated photosensitive pixels, or semiconductor photosensitive pixels may be front side photosensitive pixels, back side photosensitive pixels, or two-way photosensitive pixels.
- the semiconductor photosensitive pixels are formed into a BS I (backside illuminating) structure or an FSI (Front s ide i luminating) structure.
- Figures 17 (b) and (d) show the BSI approach
- Figures 17 (a) and (c) show the FSI approach.
- the electroless photosensitive pixel or the semiconductor photosensitive pixel is a two-way photosensitive pixel
- the problem of photosensitive alignment is involved, that is, although it is capable of two-way sensing, it cannot accept illumination in two directions at the same time, and it is necessary to select one at a time.
- the sensitizing direction can be isolated or steered, time-divisionally selected, partitioned, or pixel-selected, etc., that is, by means of, for example, occlusion of the light-shielding film, etc.
- Photosensitive selection of regions and sub-pixels Figure 18 shows the case of two-way illumination
- Figure 22 shows the timing of the time-division
- Figure 23 shows the pixel selection.
- electrolessly coated photosensitive pixels and semiconductor photosensitive pixels Suitable for respectively sensing a complementary segment or sub-segment in ultraviolet, visible, near-infrared, and far-infrared; or separately sensing an orthogonal segment or sub-segment in ultraviolet, visible, near-infrared, and far-infrared .
- the color information included in the segment or sub-segment will be detailed below.
- a hybrid multispectral photosensitive device comprising at least one electroless photosensitive pixel and at least one semiconductor photosensitive pixel.
- the preferred positions of the two pixels may be different, and at least one of the electroless plate photosensitive pixels and at least one of the semiconductor photosensitive pixels may be disposed in the same Planar hybrid multi-spectral light-sensing devices formed on a flat surface, but more widely used, or the following layered hybrid multi-spectral photosensitive devices.
- the photosensitive device includes at least two photosensitive pixel layers, and at least one of the electroless plated photosensitive pixels is disposed in one of the at least two photosensitive pixel layers, at least one The semiconductor photosensitive pixels are disposed on the other of the at least two photosensitive pixels.
- the photosensitive pixel layer is substantially equivalent to a photosensitive plane perpendicular to the direction in which the light source is irradiated.
- a photosensitive plane In such a photosensitive plane, a plurality of photosensitive pixels (usually formed into a plurality of rows and columns of pixel arrays) are arranged, for a plurality of photosensitive images
- Each of the photosensitive pixel layers in the layer may also be of a planar hybrid type, that is, both electrolessly plated photosensitive pixels and semiconductor photosensitive pixels are disposed.
- only one photosensitive pixel is disposed in the same photosensitive pixel layer, and thus, an electroless plating photosensitive pixel layer or a semiconductor photosensitive pixel layer will be formed.
- an electrolessly plated photosensitive pixel layer can be disposed above or below a layer of semiconductor photosensitive pixels.
- a photosensitive device may comprise one or more electroless photosensitive layer or semiconductor photosensitive pixel layer.
- the pixel arrangement position of the electroless photosensitive layer and the pixel arrangement position of the semiconductor photosensitive pixel layer are not necessarily required - correspondingly, because the electroless photosensitive layer and the semiconductor photosensitive layer are different colors
- the induction of light is not uniform, so in different kinds of photosensitive pixel layers (electrolessly-coated photosensitive pixel layer or semiconductor photosensitive pixel layer), a different number of pixels may be arranged, and therefore, an image of the electrolessly-coated photosensitive pixel layer
- the position of the element, the corresponding position on the semiconductor photosensitive pixel layer i.e., the position of the light penetrated by the pixel position of the electrolessly-coated photosensitive pixel layer on the semiconductor photosensitive pixel layer
- the pixels are arranged, i.e., the two do not correspond, and
- the photosensitive pixels of the same position but different layers of the photosensitive device respectively sense one complementary spectrum segment or sub-segment of ultraviolet, visible, near-infrared, and far-infrared; or respectively, respectively, including ultraviolet light, visible light, An orthogonal spectral segment or sub-segment in the near infrared, and far infrared.
- the complementary spectral segment or sub-segment includes ultraviolet spectrum, blue spectrum, green spectrum, red spectrum, near-infrared spectrum, far-infrared spectrum, cyan spectrum, yellow spectrum, white spectrum, near-infrared spectrum + far-infrared spectrum, red spectrum +NIR spectroscopy, red spectrum+near infrared spectroscopy+far infrared spectroscopy, yellow spectrum+near infrared spectroscopy, yellow spectrum+near infrared spectroscopy+far infrared spectroscopy, visible spectrum+near infrared spectroscopy+far infrared spectroscopy, ultraviolet spectroscopy+visible spectroscopy , ultraviolet spectrum + visible spectrum + near-infrared spectrum, ultraviolet spectrum + visible spectrum + near-infrared spectrum + far infrared spectrum;
- Orthogonal or sub-spectrals include UV, blue, green, red, near-infrared, far-infrared, cyan, yellow, white, near-infrared, far-red, red Spectral + Near Infrared Spectroscopy, Red Spectrum + Near Red Spectrum + Far Red Spectrum, Yellow Spectrum + Near Infrared Spectroscopy, Yellow Spectrum + Near Infrared Spectroscopy + Far Infrared Spectroscopy, Visible Spectrum + Near Infrared Spectroscopy + Far Infrared Spectroscopy, Ultraviolet spectrum + visible spectrum, ultraviolet spectrum + visible spectrum + near-infrared spectrum, ultraviolet spectrum + visible spectrum + near-infrared spectrum + far infrared spectrum.
- Embodiments include sensing at least one of the mixed multi-spectral photosensitive devices for two different spectral (i.e., radio frequency) segments.
- the color arrangement of its pixel array includes the same arrangement (the pixels in the pixel array have the same color), the horizontal arrangement (the same line of pixels in the pixel array has the same color), and the vertical arrangement (The same column of pixels in the pixel array has the same color), diagonally arranged (the same diagonal pixels in the pixel array have the same color), and generalized Bayesian arrangement (on the diagonal of the pixel array)
- the color of the pixels is the same, the color of the pixels on the other diagonal is different), the YUV422 arrangement, the horizontal YUV422 arrangement, the honeycomb arrangement, the uniform arrangement (four pixels are evenly interlaced equidistantly arranged) and the like.
- At least one of the electroless plated photosensitive pixels or at least one of the semiconductor photosensitive pixels is a front side photosensitive pixel, a back side photosensitive pixel, or a bidirectional photosensitive pixel.
- the hybrid multi-spectral photosensitive device can be used for front side illumination, back side illumination, or two-way illumination. The case of two-way illumination is shown in Figures 18, 22, and 23 (b).
- the photosensitive selection mode is isolation selection, time-division selection, and partition selection. , or pixel selection.
- the way of time-sharing is as shown in Figure 22.
- the time-sharing is performed by the shutter switch.
- ⁇ The square of the selected direction.
- ii passes through the mask. Perform pixel selection.
- the electroless photosensitive layer and the semiconductor photosensitive pixel layer in the photosensitive device may be disposed on one substrate, or may be disposed on different substrates.
- the electroless photosensitive layer is disposed on a substrate
- the semiconductor photosensitive image is The layer of the layer is disposed on another substrate.
- the substrate is an N-type silicon crystal substrate.
- a certain depth of P impurity is implanted from the surface of the pixel position toward the inside of the substrate to form a P-doping.
- the P-doped layer is formed as a semiconductor pixel, and if another P-doped layer is implanted in the P-doped layer, an N-doped layer is formed in the P-doped layer, the N-doping layer
- the layer is formed as another semiconductor photosensitive pixel (the semiconductor photosensitive pixel of the previous P-doped layer is in a different photosensitive pixel layer, but the pixel position corresponds to), and can be in accordance with "Multispectral Photosensitive Device and Its Manufacturing Method" (PCT/CN2007/071262) provides a method of setting a layered line around 390 nm, near 500 nm, near 610 legs, and near 760 legs, so that the corresponding point pixels on either layer line sense complementary or orthogonal spectra.
- FIG. 6 shows an example of the setting of a layered line, in which different colors are formed by impurity incorporation at different depths.
- the electroless plating solution is applied to the surface of the substrate to form an electrolessly-coated photosensitive pixel layer, which is described in terms of "arrangement” or “setting” in the present invention due to the variety of fabrication or processing techniques.
- the arrangement of the above two layers of semiconductor photosensitive pixels at different depths enables at least two segments to be sensed at the same pixel position on one surface of the substrate, thereby providing a pattern of pixel patterns on the surface. Better flexibility and more pixel placement can greatly increase the sensitivity, resolution, and dynamic range of the sensor.
- two layers of photosensitive pixels are arranged at the same position at the same position, because three layers are arranged at the same position, which is extremely difficult to process, and at the same time, on the wiring, due to the layers
- the leads between the two need to be isolated from each other, and the three-layer leads obviously cause difficulty in wiring.
- a plurality of the above-mentioned semiconductor photosensitive pixel layers are disposed on the same surface, and color reconstruction can be performed in combination with the pixel pattern arrangement on the plane, thereby achieving better color sensitivity. Since the two semiconductor photosensitive pixel layers are arranged in the deepest doping manner on the same side, the difficulty of the three-dimensional processing process is significantly reduced, and the wiring is also relatively simple.
- a single-sided or double-sided process can be used, from A single-sided photosensitive device or a double-sided photosensitive device is formed.
- Double-sided photosensitive device for the above-described deep doping processing, if one of the two semiconductor photosensitive pixel layers is disposed on the top surface of the substrate, and the other is disposed on the double-sided arrangement of the bottom surface of the substrate, for each side
- the tube is processed into a planar processing process, and after one surface of the photosensitive pixel layer is processed on one side, the substrate is flipped, and on the other side, the other photosensitive pixel layer is processed by a planar processing process, so that the processing is performed.
- the process is similar to the processing process of the existing single-sided single-layer photosensitive device, and is more compact than the above-mentioned two-layer doping of the same side.
- a plurality of photosensitive pixels may be arranged at a certain position of the substrate.
- both sides of the substrate are referred to as a top surface and a bottom surface.
- the description is also horizontally placed on the substrate.
- the light source is incident vertically from above or below as a reference, and those skilled in the art will appreciate that when the substrate is otherwise placed, possible alternative descriptions include left and right side faces, or front side and back side.
- the mixing of the electrolessly coated photosensitive pixel layer and the semiconductor photosensitive pixel layer further reduces the difficulty in processing the double-layer or multi-layer photosensitive device while further improving the performance of the double-layer or multi-layer photosensitive device.
- the ease of processing is unmatched by pure two-layer or multi-layer electroless photosensitive devices or pure two-layer or multi-layer semiconductor photosensitive devices.
- various forms of photosensitive devices can be formed, including, for example:
- a single-sided double-layer photosensitive device comprising an electroless plated photosensitive pixel layer and a semiconductor photosensitive pixel layer, wherein the electroless plated photosensitive pixel layer and the semiconductor photosensitive pixel layer are disposed on a top surface or a bottom surface of the substrate;
- a double-sided double-layer photosensitive device comprising an electroless plated photosensitive pixel layer and a semiconductor photosensitive pixel layer, wherein the electroless plated photosensitive pixel layer is disposed on a top surface or a bottom surface of the substrate, and the semiconductor photosensitive pixel layer is disposed On the bottom or top surface of the substrate.
- a double-sided three-layer photosensitive device comprising an electroless plating photosensitive pixel layer and two semiconductor photosensitive pixel layers, wherein the electroless plating photosensitive pixel layer is disposed on a top surface or a bottom surface of the substrate, the two semiconductor photosensitive images The layer is disposed on a bottom surface or a top surface of the substrate, or one of the two semiconductor photosensitive pixel layers is disposed on a top surface of the substrate, and the other is disposed on a bottom surface of the substrate; or
- a double-sided four-layer photosensitive device comprising two electrolessly coated photosensitive pixel layers and two semiconductor photosensitive pixel layers, the two semiconductor photosensitive pixel layers being on the bottom or top surface of the substrate, the two electroless plating films One of the photosensitive pixel layers is above the top surface, the other is below the bottom surface, or the two electrolessly coated photosensitive pixel layers are on the top or bottom surface of the substrate, the two semiconductor photosensitive pixel layers One of them is above the top surface, the other is below the bottom surface, and so on.
- Figure 24 shows an implementation of a three-layer photosensitive pixel of a three-layer hybrid multispectral photosensitive device, wherein 24 ( a ), 24 ( b ) are double-sided three-layer photosensitive devices, 24 ( c ), 24 (d A single-sided three-layer device in which an electrolessly plated photosensitive pixel layer, two semiconductor photosensitive pixel layers, is used. Similarly, two electroless photosensitive pixel layers and one semiconductor photosensitive pixel layer may be used to sandwich the semiconductor photosensitive pixel layer. Other mixed multi-spectral photosensitive devices such as four layers can also be realized by referring to this figure.
- the photosensitive pixels closer to the light source induce light having a shorter wavelength, i.e., the photosensitive pixel layer of light having a shorter wavelength is a photosensitive pixel layer closer to the light source, as shown in FIG.
- the substrate is provided with a blue photosensitive pixel layer, a green photosensitive pixel layer, a red photosensitive pixel layer, and an infrared pixel photosensitive pixel layer in this order from top to bottom.
- a three-layer semiconductor photosensitive pixel layer is disposed, and one layer is formed on one side of the substrate, and the other side is formed in two layers to arrange three layers of semiconductor photosensitive pixel layers on the substrate to respectively sense The blue, green and red colors of the visible part.
- An electroless plated photosensitive pixel layer is disposed under the bottom surface of the substrate to sense infrared.
- filter films are used.
- the filter film is disposed on the photosensitive pixel layer closest to the light source, or disposed on the photosensitive pixel layer farthest from the light source, or disposed between two photosensitive pixel layers, or disposed on the photosensitive image closest to the light source.
- the layer is on the photosensitive pixel layer farthest from the light source; that is, on the front side, the back side, or both sides of the electroless photosensitive layer or the semiconductor photosensitive layer, a specific filter film is coated.
- the filter characteristics of the filter include infrared cut-off filter, blue band pass, green band pass, red band pass, cyan band pass, yellow band pass, magenta band pass, cyan plus infrared band pass, yellow plus infrared band Pass, magenta plus infrared ribbon pass, or visible band pass.
- the filter film is used to remove the influence of unwanted spectra by sacrificing the sensitivity of a few pixels, reduce the interference between the upper and lower pixels (cros s lk lk ), or obtain the three primary colors with better orthogonality or A more pure complementary color signal.
- Embodiments include having adjacent layers of the multilayer photosensitive pixel layers of the hybrid multi-spectral photosensitive device each use their own readout circuitry.
- Embodiments include using a capture circuit of one of the adjacent layers of the multi-layer photosensitive pixel layer of the hybrid multi-spectral photosensitive device
- Embodiments include having the read circuitry of the hybrid multi-spectral light-sensing device in a semiconductor photosensitive pixel layer, or a separate read circuit layer.
- Embodiments of the read circuit of the hybrid multi-spectral photosensitive device include "a multi-spectral photosensitive device and a sampling method thereof” (Chinese Application No.: 2009101059 4 8. 2) and “a photosensitive device and a reading method thereof” Pixel reading and subsampling methods in Read Circuit (Chinese Application No.: 200910106477. 7).
- Embodiments include employing a master pixel read circuit, a passive pixel read circuit, or an active pixel and passive pixel hybrid read circuit in the signal read circuit of the hybrid multispectral light sensitive device.
- the active pixel and passive pixel hybrid read circuit is shown in Figure 21.
- the active pixels comprise 3T, 4", 5", or 6" active pixels.
- the active pixel structures of 3 ⁇ and 4 ⁇ are shown in Figure ⁇ and Figure 8, respectively.
- the sharing mode of the reading circuit includes a no-sharing mode, a single layer or a 4-point sharing mode of a single layer or a single layer, or a 6-point sharing mode of a single layer or an upper layer, a single layer or an 8-layer sharing mode of the upper and lower layers, or a single layer or an upper layer or a lower layer.
- Point sharing method The 4-point sharing mode, the 6-point sharing mode, the 8-point sharing mode, and the arbitrary point sharing mode are as shown in Fig. 11, Fig. 12, Fig. 13, and Fig. 14, respectively.
- the read circuit of the hybrid multi-spectral light-sensing device includes an adjacent pixel, a different row, a different row, or a different row of pixels in a pixel array for each photosensitive pixel layer Performing two-two combined sampling to obtain a first merging unit of sample data of the first merged pixel; and combining sample data for the first merged pixel obtained by the first merging unit to obtain a second merged pixel A second merging unit that samples the data.
- the embodiment further includes: the reading circuit further comprising a third merging unit, configured to perform merging sampling data of the second merging pixel obtained by the second merging unit to obtain sampling data of the third merging pixel.
- the pixels of the first merging unit or the second merging unit are combined in a manner of charge addition or different color pixels between pixels of the same or different colors.
- the first merged pixel and the second merged pixel described above are derived from the process of dividing the sub-sampling into at least two processes, a first merged sampling process and a second combined sampling process.
- the first merge sampling process and the second merge sampling process generally occur between the row (combined) sampling and the column (combined) sampling of the pixel, mainly for the analog signal, except that the charge addition portion is usually only in the first combined sampling
- its order and content are usually exchangeable.
- it can also include the third And the sampling process, the third combined sampling process occurs after the analog to digital conversion, mainly for the digital signal.
- first merge sampling process two immediately adjacent pixels in the pixel array are taken for merging.
- the merging of the adjacent pixels is completed, and the merged pixels are referred to as the first merged pixels.
- first merged pixels are only described in the present invention, and the concept is used to refer to The pixels after the first merging process, rather than physically, there is a "first merged pixel" in the pixel array; the data obtained by combining the two adjacent pixels is called the sample of the first merged pixel. data.
- first merged pixels the data obtained by combining the two adjacent pixels.
- the immediate situation consists of a peer-to-peer column, a different row, or a different row.
- the signal will average at least two pixels, and the noise will decrease. Therefore, after combining, at least the signal-to-noise ratio can be doubled, and the combination can be the same or different. Color between pixels.
- the two combined colors can be different, that is, the color is added or averaged, it can be known from the principle of the three primary colors of the color that the addition of the two primary colors is a complementary color of another primary color, that is, an image of two different primary colors.
- the combination of primes produces another complementary color of the primary color, and transforms from the primary color space to the complementary color space.
- color space transformation Only the color space transformation occurs, and the color reconstruction can still be completed by different complementary colors. In this way, it is possible to combine pixels of different colors to improve the signal-to-noise ratio while enabling color reconstruction.
- the entire sub-sampling process is therefore optimized to accommodate the high speed requirements of large data volume pixel arrays.
- a basic requirement of color space transformation is that the combination of transformed colors can reconstruct the desired RGB (or YUV, or CYMK) color (by interpolation, etc.).
- the first merged sample simply combines the two pixels, and obviously, the merged first merged pixels also have a plurality of pixels.
- the color combination used may be the same or different.
- the first merge is all carried out between the same colors, we call it the same color merge mode; when the first merge is all performed between different colors, we call it the heterochromatic merge mode; when the first merge part Performing between the same color and partly between different colors, we call it the hybrid merge method; when some extra colors in the pixel array are discarded (of course, discarding is optional, for example, can not affect Color reconstruction), this method of color merging is called selective discarding of excess color.
- the second merging process is an operation on a plurality of first merged pixels.
- the first merged pixels of the same color may be merged; the first merged pixels of different colors may also be combined (of course In this case, all the three primary colors may be added together and the color cannot be reconstructed. Color).
- the above-mentioned method of homochromatic merging, heterochromatic merging, hybrid merging, etc. is to perform color-based categorization of the combined sampling.
- the combined sampling manners of the first merging process and the second merging process include: The signal is automatically output to the bus automatically averaged, skipped or skipped, sampled one by one, and two or three of these modes are used simultaneously.
- the first merge process and the second merge process are identical and interchangeable except for the difference in order, except that the charge addition portion can usually only be done during the first merge sampling process.
- the so-called automatic output averaging method for direct output to the bus that is, the signals to be combined (the same or different colors) are simultaneously output to the data acquisition bus, and the average of the signals to be combined is obtained by the automatic balancing of the (voltage) signals. value.
- the so-called skip or skip mode is to skip some rows or columns to achieve (merge) sampling by reducing the amount of data.
- the so-called sample-by-sampling method actually does not do any merging, and thus reads the original pixel or the first merged pixel. Some of these three methods can be used simultaneously. For example, the skip or skip mode can be used simultaneously with the automatic averaging or sample-by-sampling method of direct output to the bus.
- the subsampling method of the third merge sampling process includes a color space conversion method, a back end digital image scaling method, and serial use of the two methods.
- the first and second combining processes are mainly performed on the analog signal
- the third sub-sampling process is mainly performed on the digital signal, that is, after the analog-to-digital conversion.
- Charge addition can be achieved during combined sampling.
- the current combined sampling almost always achieves the average of voltage or current signals.
- the signal-to-noise ratio can only be increased by a factor of at most. This is because the existing combined sampling is a combination of N pixels of the same color sharing one output line. On this output line, the voltage or current signal of each pixel must be performed (automatic). On average, therefore, the increase in signal-to-noise ratio is only due to a reduction in noise combining and thus a doubling of the signal-to-noise ratio.
- the charge addition method of the present invention for example, by reading a capacitor to store a charge, the charge is accumulated, so that the signal can be superimposed so that the signal-to-noise ratio can be increased by at least N times, which is at least twice as high as the signal average method. That is to say, the N signals are combined by the method of charge addition, theoretically up to the effect of N 2 signals phase averaging or better (as described below), which is a very significant effect of improving the signal to noise ratio. means.
- the progressive scan, interlaced or inter-row read mode of the present invention is different from the inter l eaved s cann ing in the conventional television system.
- the traditional field scanning method is interlaced and interlaced. Therefore, the odd field and the even field (whether photosensitive or read) are one time out of time, that is, a field.
- the pixels are exactly the same in the photographic time sequence as the progressive scan and progressive read mode, except that the read order of the lines is changed.
- a Multispectral Photosensitive Device and Its Sampling Method China Application No.: 200910105948. 2
- a Photosensitive Device and Its Reading Method, Reading Circuit (China Application No.: 200910106477. 7) ).
- the color space conversion comprises: RGB to CyYeMgX space transform, RGB to YUV space transform, or CyYeMgX to YUV space transform, where X is R (red) ), G (green), B (blue).
- the above-described charge addition manner is performed by directly connecting pixels in parallel or transferring charges simultaneously into a read capacitor (FD).
- the color-based combined sampling manner of the first merging unit or the second merging unit includes a same color merging method, a heterochromatic merging method, a hybrid merging method, or an optional discarding of the excess color merging method.
- the merge mode of the first merge unit and the second merge unit is different in the same color merge mode, that is, at least one of the merge units does not adopt the same color merge mode.
- the location-based merge sampling mode of the first merging unit or the second merging unit includes at least one of the following ways: automatic averaging of signals directly outputted to the bus, skipping or hopping, and one by one Sampling method. That is to say, these several location-based combined sampling methods can be used alone or in combination.
- a color space conversion can be used.
- a combined sampling manner of the third merged sampling unit is implemented by at least one of a style and a back end digital image scaling.
- Figure 19 shows how a heterochromatic pixel charge is combined.
- the sub-sampling function described above is the row address decoding controller and the column address decoding controller as shown in FIG.
- the row address decoding controller will output two types of signals, row row signal Row [i] (one line per line) and row control vector signal RS [i] (one or more lines per line), where i is the label of the row.
- the column address decoding controller will output two types of signals, column signal Col [j] (one line per column) and column control vector signal T [ j ] (one or more lines per column), where j is the column The label.
- the row selection signal Row [i] is used to make the row selection, and the column selection signal Co l [j] is used to make the column selection.
- This is a relatively standard set of signals for both groups.
- the row control vector signal RS [i] is an extension of the existing CMOS row control signal (one line per line is extended to multiple lines per line), and the column control vector signal T [j], some CMOS sensors do not have, Even if there is, there is only one column.
- RS [ i] and T [j] are used to control the reset, clear, sensitization time control, charge transfer, pixel merging, and pixel reading of the photosensitive pixels. Due to the symmetry of the rows and columns, RS [ i ] and T [j] have many specific implementations. The specific implementation of these signals is not limited.
- the full-image sampling mode of the multi-spectral photosensitive device includes a progressive scan, a progressive read mode, or a progressive scan, an interlaced or an inter-row read mode.
- Embodiments also include making a photosensitive system comprising at least one hybrid multi-spectral photoreceptor.
- the photosensitive system is used to acquire a front, back, or bidirectional image.
- the photosensitive system includes a digital camera, a camera phone, a video camera, a video or camera monitoring system, an image recognition system, a medical image system, a military, a fire, and a downhole image system, an automatic tracking system, a stereoscopic image system, a machine vision system, and a car vision.
- the hybrid multi-spectral photosensitive device of the present invention can simultaneously obtain a plurality of color signals and other optical speech signals.
- a semiconductor photosensitive pixel layer is disposed on each of the top surface and the bottom surface of the substrate.
- the top surface is used to sense blue light, green light, or blue light
- the bottom surface is used to sense red light, yellow light, or green light; then a chemistry that senses ultraviolet light is placed on top of the semiconductor photosensitive pixel layer.
- the incident light can be utilized to the utmost extent.
- This hybrid multi-spectral sensor can be used for front side sensitization, back side sensitization, or two-way sensitization.
- various preferred multi-spectral photosensitive devices can be produced, such as high-sensitivity color sensing devices, high-sensitivity color and infrared sensing devices, and no impurities. High-sensitivity color or multi-spectral light-sensing devices, etc., which are colored (caused by interpolation).
- Ultra-low-power sensitized devices can be obtained by combining active pixels with passive pixel reading.
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Abstract
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Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2011/076335 WO2012174751A1 (zh) | 2011-06-24 | 2011-06-24 | 一种混合多光谱感光象素组、感光器件、及感光系统 |
CA 2840266 CA2840266A1 (en) | 2011-06-24 | 2011-06-24 | Mixed multi-spectrum light-sensing pixel group, light-sensing device, and light-sensing system |
EP20110868260 EP2725617A4 (en) | 2011-06-24 | 2011-06-24 | HYBRID MULTISPECTIVE LIGHT-SENSITIVE PIXEL GROUP, LIGHT-SENSITIVE DEVICE AND LIGHT-SENSITIVE SYSTEM |
KR20147000193A KR20140029515A (ko) | 2011-06-24 | 2011-06-24 | 하이브리드 다중 스펙트럼 감광 화소군, 감광 소자 및 감광 시스템 |
US14/128,923 US9419161B2 (en) | 2011-06-24 | 2011-06-24 | Hybrid multi-spectrum photosensitive pixel group, photosensitive device, and photosensitive system |
RU2014102182/28A RU2014102182A (ru) | 2011-06-24 | 2011-06-24 | Группа смешанных многоспектральных светочувствительных пикселей, светочувствительное устройство и светочувствительная система |
JP2014516162A JP2014526136A (ja) | 2011-06-24 | 2011-06-24 | 混合マルチスペクトル感光画素グループ |
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PCT/CN2011/076335 WO2012174751A1 (zh) | 2011-06-24 | 2011-06-24 | 一种混合多光谱感光象素组、感光器件、及感光系统 |
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PCT/CN2011/076335 WO2012174751A1 (zh) | 2011-06-24 | 2011-06-24 | 一种混合多光谱感光象素组、感光器件、及感光系统 |
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US (1) | US9419161B2 (zh) |
EP (1) | EP2725617A4 (zh) |
JP (1) | JP2014526136A (zh) |
KR (1) | KR20140029515A (zh) |
CA (1) | CA2840266A1 (zh) |
RU (1) | RU2014102182A (zh) |
WO (1) | WO2012174751A1 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102088685B1 (ko) | 2012-12-19 | 2020-03-13 | 바스프 에스이 | 적어도 하나의 물체를 광학적으로 검출하기 위한 검출기 |
KR20160019067A (ko) | 2013-06-13 | 2016-02-18 | 바스프 에스이 | 적어도 하나의 물체의 배향을 광학적으로 검출하기 위한 검출기 |
CN109521397B (zh) | 2013-06-13 | 2023-03-28 | 巴斯夫欧洲公司 | 用于光学地检测至少一个对象的检测器 |
WO2015024870A1 (en) | 2013-08-19 | 2015-02-26 | Basf Se | Detector for determining a position of at least one object |
CN105637320B (zh) | 2013-08-19 | 2018-12-14 | 巴斯夫欧洲公司 | 光学检测器 |
US11041718B2 (en) | 2014-07-08 | 2021-06-22 | Basf Se | Detector for determining a position of at least one object |
JP6633268B2 (ja) * | 2014-09-03 | 2020-01-22 | グローリー株式会社 | センサモジュール及び紙葉類処理装置 |
EP3201567A4 (en) | 2014-09-29 | 2018-06-06 | Basf Se | Detector for optically determining a position of at least one object |
CN107003785B (zh) | 2014-12-09 | 2020-09-22 | 巴斯夫欧洲公司 | 光学检测器 |
WO2016120392A1 (en) * | 2015-01-30 | 2016-08-04 | Trinamix Gmbh | Detector for an optical detection of at least one object |
KR102644439B1 (ko) | 2015-07-17 | 2024-03-07 | 트리나미엑스 게엠베하 | 하나 이상의 물체를 광학적으로 검출하기 위한 검출기 |
US10412283B2 (en) | 2015-09-14 | 2019-09-10 | Trinamix Gmbh | Dual aperture 3D camera and method using differing aperture areas |
WO2018019921A1 (en) | 2016-07-29 | 2018-02-01 | Trinamix Gmbh | Optical sensor and detector for optical detection |
JP2019532517A (ja) | 2016-10-25 | 2019-11-07 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光学的に検出するための光検出器 |
CN109891265B (zh) | 2016-10-25 | 2023-12-01 | 特里纳米克斯股份有限公司 | 用于光学检测至少一个对象的检测器 |
KR102484739B1 (ko) | 2016-11-17 | 2023-01-05 | 트리나미엑스 게엠베하 | 적어도 하나의 대상체를 광학적으로 검출하기 위한 검출기 |
US11860292B2 (en) | 2016-11-17 | 2024-01-02 | Trinamix Gmbh | Detector and methods for authenticating at least one object |
EP3612805A1 (en) | 2017-04-20 | 2020-02-26 | trinamiX GmbH | Optical detector |
CN110998223B (zh) | 2017-06-26 | 2021-10-29 | 特里纳米克斯股份有限公司 | 用于确定至少一个对像的位置的检测器 |
CN111989783B (zh) * | 2018-11-19 | 2024-02-13 | 松下知识产权经营株式会社 | 摄像装置及摄像系统 |
WO2023102421A1 (en) * | 2021-11-30 | 2023-06-08 | Georgia State University Research Foundation, Inc. | Flexible and miniaturized compact optical sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5796433A (en) * | 1996-03-20 | 1998-08-18 | Loral Fairchild Corp. | Multiple-frame CCD image sensor with overlying photosensitive layer |
WO2008131313A2 (en) | 2007-04-18 | 2008-10-30 | Invisage Technologies, Inc. | Materials systems and methods for optoelectronic devices |
US20100118172A1 (en) * | 2008-11-13 | 2010-05-13 | Mccarten John P | Image sensors having gratings for color separation |
CN102244083A (zh) * | 2010-05-13 | 2011-11-16 | 博立多媒体控股有限公司 | 一种混合多光谱感光象素组、感光器件、及感光系统 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3940804B2 (ja) * | 1997-09-04 | 2007-07-04 | 株式会社ニコン | ハイブリッド型半導体装置及びその製造方法 |
US6906326B2 (en) * | 2003-07-25 | 2005-06-14 | Bae Systems Information And Elecronic Systems Integration Inc. | Quantum dot infrared photodetector focal plane array |
JP2005268609A (ja) * | 2004-03-19 | 2005-09-29 | Fuji Photo Film Co Ltd | 多層積層型多画素撮像素子及びテレビカメラ |
JP4911445B2 (ja) * | 2005-06-29 | 2012-04-04 | 富士フイルム株式会社 | 有機と無機のハイブリッド光電変換素子 |
JP5196488B2 (ja) * | 2006-07-21 | 2013-05-15 | ルネサスエレクトロニクス株式会社 | 光電変換装置及び撮像装置 |
JP2008066402A (ja) * | 2006-09-05 | 2008-03-21 | Fujifilm Corp | 撮像素子および撮像装置 |
US7888763B2 (en) * | 2008-02-08 | 2011-02-15 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with improved infrared sensitivity |
CN101807590B (zh) * | 2009-02-16 | 2013-03-27 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件 |
US20110164156A1 (en) * | 2009-07-24 | 2011-07-07 | Masao Hiramoto | Image pickup device and solid-state image pickup element |
US20110155233A1 (en) * | 2009-12-29 | 2011-06-30 | Honeywell International Inc. | Hybrid solar cells |
-
2011
- 2011-06-24 RU RU2014102182/28A patent/RU2014102182A/ru not_active Application Discontinuation
- 2011-06-24 US US14/128,923 patent/US9419161B2/en active Active
- 2011-06-24 JP JP2014516162A patent/JP2014526136A/ja active Pending
- 2011-06-24 CA CA 2840266 patent/CA2840266A1/en not_active Abandoned
- 2011-06-24 EP EP20110868260 patent/EP2725617A4/en not_active Withdrawn
- 2011-06-24 KR KR20147000193A patent/KR20140029515A/ko not_active Application Discontinuation
- 2011-06-24 WO PCT/CN2011/076335 patent/WO2012174751A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5796433A (en) * | 1996-03-20 | 1998-08-18 | Loral Fairchild Corp. | Multiple-frame CCD image sensor with overlying photosensitive layer |
WO2008131313A2 (en) | 2007-04-18 | 2008-10-30 | Invisage Technologies, Inc. | Materials systems and methods for optoelectronic devices |
CN102017147A (zh) * | 2007-04-18 | 2011-04-13 | 因维萨热技术公司 | 用于光电装置的材料、系统和方法 |
US20100118172A1 (en) * | 2008-11-13 | 2010-05-13 | Mccarten John P | Image sensors having gratings for color separation |
CN102244083A (zh) * | 2010-05-13 | 2011-11-16 | 博立多媒体控股有限公司 | 一种混合多光谱感光象素组、感光器件、及感光系统 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2725617A4 |
Also Published As
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EP2725617A4 (en) | 2015-02-25 |
CA2840266A1 (en) | 2012-12-27 |
KR20140029515A (ko) | 2014-03-10 |
RU2014102182A (ru) | 2015-07-27 |
EP2725617A1 (en) | 2014-04-30 |
JP2014526136A (ja) | 2014-10-02 |
US20140209789A1 (en) | 2014-07-31 |
US9419161B2 (en) | 2016-08-16 |
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