WO2012157871A2 - Appareil d'hydrogénation de plasma - Google Patents

Appareil d'hydrogénation de plasma Download PDF

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Publication number
WO2012157871A2
WO2012157871A2 PCT/KR2012/003476 KR2012003476W WO2012157871A2 WO 2012157871 A2 WO2012157871 A2 WO 2012157871A2 KR 2012003476 W KR2012003476 W KR 2012003476W WO 2012157871 A2 WO2012157871 A2 WO 2012157871A2
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WO
WIPO (PCT)
Prior art keywords
gas
plasma
discharge tube
hydrogen
based compound
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PCT/KR2012/003476
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English (en)
Korean (ko)
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WO2012157871A3 (fr
Inventor
홍용철
이봉주
신동훈
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(주)그린사이언스
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Publication of WO2012157871A2 publication Critical patent/WO2012157871A2/fr
Publication of WO2012157871A3 publication Critical patent/WO2012157871A3/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/2405—Stationary reactors without moving elements inside provoking a turbulent flow of the reactants, such as in cyclones, or having a high Reynolds-number
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/10—Compounds containing silicon, fluorine, and other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0881—Two or more materials
    • B01J2219/0883—Gas-gas

Definitions

  • the present invention relates to a hydrogenation technique using plasma.
  • the present invention aims to produce Si-H-Cl based compounds economically and efficiently using plasma.
  • the electromagnetic wave supply unit for generating an electromagnetic wave of a predetermined frequency;
  • a discharge tube in which a plasma is generated from the electromagnetic wave supplied from the electromagnetic wave supply unit and a mixed gas including hydrogen gas or hydrogen;
  • a gas supply unit for injecting the hydrogen gas or the mixed gas including hydrogen into the discharge tube in a vortex form;
  • a reactant supply unit supplying a Si-Cl based compound to the plasma generated inside the discharge tube;
  • a reaction furnace in which a Si—H—Cl based compound is produced by a reaction between a hydrogen atom or a hydrogen ion dissociated by the generated plasma and the Si—Cl based compound;
  • a product discharge part for discharging the Si-H-Cl-based compound generated in the reactor.
  • an electromagnetic wave supply unit for generating an electromagnetic wave of a predetermined frequency
  • a discharge tube in which a plasma is generated from the electromagnetic wave supplied from the electromagnetic wave supply unit and a mixed gas including hydrogen gas or hydrogen
  • a gas and reactant supply unit for injecting a gaseous Si-Cl-based compound in a vortex form together with the hydrogen gas or the mixed gas including hydrogen into the discharge tube
  • a reaction furnace in which a Si—H—Cl based compound is produced by a reaction between a hydrogen atom or a hydrogen ion dissociated by the generated plasma and the Si—Cl based compound
  • a gas discharge part for discharging the Si-H-Cl-based compound generated in the reactor.
  • the present invention it is possible to produce a large amount of hydrogen-related species, in particular Si-H-Cl-based compounds using a plasma hydrogenation reaction.
  • the plasma hydrogenation reaction is generated in a high temperature region of 3000K to 5000K or more, the efficiency of compound generation can be improved, and since the plasma of the present invention is generated in an atmosphere of 1 atmosphere, there is an advantage that the size and control of the plasma gasifier can be facilitated.
  • FIG. 1 is a block diagram of a plasma hydrogenation apparatus 100 according to a first embodiment of the present invention.
  • FIG. 2 is a block diagram of a plasma hydrogenation apparatus 200 according to a second embodiment of the present invention.
  • 3 and 4 are vertical cross-sectional views showing a portion where the waveguide 112 and the discharge tube 114 are connected to the plasma hydrogenation reaction apparatus 100 or 200 according to the present invention.
  • 5A to 5C are horizontal cross-sectional views showing the detailed configuration of the gas supply unit 116 of the plasma hydrogenation reaction apparatus 100 according to an embodiment of the present invention.
  • 6A and 6B are horizontal cross-sectional views illustrating detailed configurations of the reactant supply unit 118 of the plasma hydrogenation reaction apparatus 100 according to an embodiment of the present invention.
  • FIG. 1 is a block diagram of a plasma hydrogenation apparatus 100 according to a first embodiment of the present invention.
  • the plasma hydrogenation reaction apparatus 100 includes a power supply unit 102, an electromagnetic wave oscillator 104, a circulator 106, a directional coupler 108, a tuner 110, a waveguide 112, a discharge tube 114,
  • the gas supply unit 116, the reactant supply unit 118, the reactor 120, and the product discharge unit 122 may be further included.
  • the product separation unit 124 may be further included as necessary.
  • the power supply unit 102 supplies power required for driving the plasma hydrogenation reaction apparatus 100.
  • the electromagnetic wave oscillator 104 is connected to the power supply unit 102 and receives electric power from the power supply unit 102 to oscillate electromagnetic waves.
  • an electromagnetic wave oscillator (magnetron) of commercial frequency is used, for example, an electromagnetic wave oscillator having a frequency of 2.45 GHz, or an electromagnetic wave having a frequency range of 902 to 928 MHz (915 MHz magnetron) or 886 to 896 MHz (896 MHz magnetron).
  • An electromagnetic wave oscillator can be used.
  • the circulator 106 is connected to the electromagnetic wave oscillator 104, and outputs the electromagnetic wave oscillated by the electromagnetic wave oscillator 104, and simultaneously dissipates electromagnetic energy reflected by impedance mismatch to protect the electromagnetic wave oscillator 104.
  • the directional coupler 108 outputs electromagnetic waves transmitted through the circulator 106, and at the same time monitors the intensity of the incident wave and the reflected wave.
  • the tuner 110 adjusts the intensity of the incident wave and the reflected wave of the electromagnetic wave output from the directional coupler 108 to induce impedance matching so that the electric field induced by the electromagnetic wave is maximized in the discharge tube 114.
  • the waveguide 112 transmits electromagnetic waves input from the tuner 110 to the discharge tube 114.
  • the power supply unit 102, the electromagnetic wave oscillator 104, the circulator 106, the directional coupler 108, the tuner 110 and the waveguide 112 described above constitute the electromagnetic wave supply unit 126 in the present invention.
  • the electromagnetic wave supply unit 126 generates electromagnetic waves and supplies them to the discharge tube 114.
  • the discharge tube 114 generates a plasma from the electromagnetic wave and the mixed gas containing hydrogen gas or hydrogen supplied from the electromagnetic wave supply unit 126, and the hydrogen (H) contained in the hydrogen gas or the mixed gas using the generated plasma. 2 ) dissociates to generate hydrogen (H) in the atomic state or to generate hydrogen ions, and reacts the generated hydrogen atoms or hydrogen ions with the Si-Cl-based compound to generate a Si-H-Cl-based compound.
  • Si-Cl-based compound which is a reactant in the present invention may be, for example, SiCl 4 or SiCl 2 and the like, Si-H-Cl-based compounds generated therefrom may be SiHCl 3 or SiH 2 Cl 2 and the like.
  • the hydrogen gas or the mixed gas containing hydrogen injected into the discharge tube 114 stabilizes the generated plasma and forms a swirl in the discharge tube 114 to form an inner wall of the discharge tube 114 from a high temperature plasma flame. Will protect.
  • hydrogen contained in the hydrogen gas or the mixed gas is reacted with the Si-Cl-based compound in the plasma to generate a Si-H-Cl-based compound.
  • the mixed gas may be formed by mixing hydrogen with an inert gas containing at least one of argon, helium, or nitrogen.
  • the gas supply unit 116 injects hydrogen gas or a mixed gas containing hydrogen into the discharge tube 114 in a vortex form, and the reactant supply unit 118 supplies the Si-Cl-based compound to the plasma generated inside the discharge tube 114. do.
  • Reactor 120 is formed in a cylindrical shape is provided on the top of the discharge tube 114, between the hydrogen atoms or hydrogen ions dissociated by the generated plasma and the Si-Cl-based compound supplied from the reactant supply unit 118 It is a space where a Si-H-Cl-based compound is produced by the reaction.
  • gas supply unit 116, the reactant supply unit 118, and the reactor 120 will be described later.
  • the product discharge part 122 discharges the Si-H-Cl based compound generated by the plasma to the outside.
  • the plasma hydrogenation apparatus 100 may further include a product separation unit 124.
  • the product separator 124 separates impurities from the Si-H-Cl-based compound discharged from the product outlet 122 to discharge only pure Si-H-Cl-based compounds and reuses the separated impurities. .
  • Product discharged from the discharging part 122 to the gas state, trichlorosilane (TCS, SiHCl 3) in addition to Si-H-Cl based compounds, etc., the hydrogen gas supplied from the gas supply 116 or reactant supply 118 to The mixed gas, part of the Si-Cl-based compound remaining unreacted, and other impurities are included together.
  • the product separation unit 124 removes impurities and the like from these products to purify only pure Si-H-Cl based compounds.
  • the unreacted Si-Cl-based compound of the separated impurities in the reactor 120 is supplied to the reactant supply unit 118, the hydrogen gas or mixed gas containing hydrogen is supplied to the gas supply unit 116 to react Re-injection into the furnace 120 increases the reuse rate of the raw materials and at the same time reduces the manufacturing cost of the Si-H-Cl-based compound.
  • FIG. 2 is a block diagram of a plasma hydrogenation apparatus 200 according to a second embodiment of the present invention.
  • the components represented by the same reference numerals as those of FIG. 1 are configured to substantially perform the same functions as the first embodiment, and thus redundant descriptions thereof will be omitted.
  • the gas supply unit 116 and the reactant supply unit 118 are not separated from each other, and the gas and reactant supply unit 202 is included instead of the first embodiment.
  • the gas and reactant supply unit 202 is formed at the lower end of the discharge tube 114 to supply hydrogen gas or mixed gas and Si-Cl compound of the gas form in a swirl form to the discharge tube 114. It is composed.
  • the plasma hydrogenation reaction apparatus 200 may further comprise a separate product separation unit 204.
  • the product separator 204 separates impurities from the Si-H-Cl-based compound discharged from the product outlet 122 to discharge only pure Si-H-Cl-based compounds, and reuses the separated impurities.
  • the product discharged in the gaseous state from the product discharge unit 122 includes hydrogen gas supplied from the gas and the reactant supply unit 202 in addition to Si-H-Cl-based compounds such as trichlorosilane (TCS, SiHCl 3 ). To a portion of the mixed gas or the remaining Si-Cl-based compound that is not reacted, and other impurities are included.
  • the product separation unit 204 removes impurities and the like from these products to purify only pure Si-H-Cl based compounds.
  • the unreacted Si-Cl-based compound, hydrogen gas, or a mixed gas containing hydrogen in the reactor 120 among the impurities is supplied to the gas and the reactant supply unit 202 to be re-introduced into the reactor 120. Injecting increases the reuse rate of raw materials and at the same time reduces the manufacturing cost of Si-H-Cl based compounds.
  • 3 and 4 are vertical cross-sectional views showing a portion where the waveguide 112 and the discharge tube 114 are connected to the plasma hydrogenation reaction apparatus 100 or 200 according to the present invention.
  • the discharge tube 114 is connected to the waveguide 112 to provide a space 300 in which the plasma is generated by the electromagnetic waves input through the waveguide 112.
  • the discharge tube 114 is formed in a cylindrical shape to vertically align the waveguide 112 at a point corresponding to 1/8 to 1/2 of the wavelength in the waveguide 112, preferably 1/4, from the end of the waveguide 112. It may be installed to penetrate, and may be made of quartz, alumina, or ceramic for easy transmission of electromagnetic waves.
  • the discharge tube supporter 302 formed to surround the waveguide 112 at the outer surface of the waveguide 112 supports the discharge tube 114 such that the discharge tube 114 is stably inserted into the waveguide 112 and fixed.
  • the reactor 120 is formed on the upper end of the discharge tube 114, and is formed in a cylindrical shape having the same diameter as the discharge tube 114.
  • the gas supply unit 116 is formed at the lower end of the discharge tube 114, and the reactant supply unit 118 is formed at the lower end of the reactor 120 as shown in FIG. 3 or the discharge tube 114 as shown in FIG. 4. It may be formed at the lower end of the).
  • the gas supply unit 116 of FIGS. 3 and 4 serves as the gas and reactant supply unit 202.
  • a separate reactant supply unit 118 may be omitted. Therefore, the description of the gas supply unit 116 of the first embodiment is applicable to the gas and reactant supply unit 202 of the second embodiment as it is not otherwise mentioned in the following description.
  • 5A to 5C are horizontal cross-sectional views showing the detailed configuration of the gas supply unit 116 of the plasma hydrogenation reaction apparatus 100 according to an embodiment of the present invention.
  • the gas supply unit 116 of the plasma hydrogenation reaction apparatus 100 includes one or more gas supply pipe 400.
  • Each of the gas supply pipes 400 is configured to supply hydrogen gas or a mixed gas containing hydrogen into the discharge tube 114, one end of which is connected to the inside of the discharge tube 114.
  • the gas supply pipe 400 may be formed in an appropriate number inside the gas supply unit 116 as necessary.
  • 4A illustrates an embodiment in which two gas supply pipes 400 are formed
  • FIGS. 4B and 4C illustrate embodiments in which four and six gas supply pipes 400 are formed, respectively.
  • the gas supply pipe 400 may be arranged at equal intervals around the discharge pipe 114 in the gas supply part 116.
  • the gas supply pipe 400 is supplied to the discharge tube 114 such that the supplied hydrogen gas or mixed gas rotates in a swirl form along the inner circumferential surface of the discharge tube 114.
  • the gas supply pipe 400 may be configured such that hydrogen gas or mixed gas discharged into the discharge tube 114 is discharged along the inner circumferential surface of the discharge tube 114 (ie, parallel to the inner circumferential surface). It is connected to the inside.
  • the gas supply pipe 400 is configured so that the advancing direction of the gas supply pipe 400 and the parallel to the inner peripheral surface of the discharge pipe 114 in the vicinity of one end connected to the discharge pipe (114). In this case, the supplied hydrogen gas or the mixed gas rotates in one direction in the discharge tube 114 to have a vortex shape.
  • 6A and 6B are horizontal cross-sectional views illustrating detailed configurations of the reactant supply unit 118 of the plasma hydrogenation reaction apparatus 100 according to an embodiment of the present invention.
  • the reactant supply unit 118 of the plasma hydrogenation reaction apparatus 100 includes one or more reactant supply tubes 500, and the discharge tube 114 and the reactant supply tubes 500. Si-Cl-based compound is supplied to the plasma formed inside the reactor (120).
  • the reactant supply pipe 500 may also be formed in an appropriate number inside the reactant supply unit 118 as necessary. Like the gas supply pipe 400, the reactant supply pipe 500 may also be formed in the reactant supply unit 118. It can be arranged at equal intervals around.
  • the reactant supply pipe 500 may be supplied to the reactor 120 so that the supplied Si-Cl compound rotates in a vortex form along the inner circumferential surface of the reactor 120.
  • the reactant supply pipe 500 discharges Si-Cl based compounds discharged into the reactor 120 along the inner circumferential surface of the reactor 120 (ie, parallel to the inner circumferential surface). Is connected to the inside of the reactor 120 so as to.
  • the reactant supply pipe 500 should also be configured such that the advancing direction of the reactant supply pipe 500 is parallel to the inner circumferential surface of the reactor 120 near one end connected to the reactor 120.
  • the supplied Si-Cl-based compound rotates in one direction inside the reactor 120 to have a swirl shape.
  • the rotation direction of the vortex preferably corresponds to the rotation direction of hydrogen gas or mixed gas.
  • the reactant supply pipe 500 may be formed to face the center of the plasma formed inside the discharge pipe 114.
  • the Si-Cl-based compound ejected through the reactant supply pipe 500 is directly injected toward the center of the plasma having a high temperature, the reaction of the Si-Cl-based compound may occur more easily.
  • the reactor 120 is provided above the discharge tube 114, and is a space where plasma-hydrogenation reaction occurs by plasma formed in the discharge tube 114.
  • the plasma hydrogenation reaction is a concept that is distinguished from the general hydrogenation reaction, whereas the hydrogenation reaction generally means a chemical reaction between molecular hydrogen (H 2 ) and a compound or element in the presence of a catalyst, Means chemical reaction with dissociated hydrogen atoms or hydrogen ions in a chemically highly reactive plasma.
  • the hydrogen molecules In order to dissociate or ionize the hydrogen molecules as described above, the hydrogen molecules should be heated as shown in a graph of the relationship between dissociation degree and ionization degree according to the temperature of FIG. 7. It is very difficult to dissociate hydrogen. Accordingly, the present invention is configured to easily dissociate hydrogen molecules by using plasma, and to generate Si-H-Cl-based compounds from Si-Cl-based compounds.
  • hydrogen molecules begin to dissociate at 2000K and almost all hydrogen molecules dissociate when the temperature reaches about 7000K (0.23 at 3500K, 0.45 at 4000K, 0.75 at 4500K, 0.75 at 5000K). 0.9).
  • the slope of dissociation degree is greatest between 3000 and 5000K, and the number of highly reactive hydrogen atoms is rapidly increased.
  • the temperature of the space in which the plasma inside the reactor 120 is formed is configured to maintain a temperature between 3000K and 5000K, and if necessary, is provided with heat insulating means surrounding the inner circumferential surface of the reactor 120 or By providing at least one of the heat transfer means for maintaining the temperature inside the reactor 120 in the above range by receiving an external power source to ensure that the inside of the reactor 120 maintains the optimum temperature.
  • the above dissociation degree if SiCl 4 is injected into the reaction material to obtain SiHCl 3 , that is,
  • the optimum molar ratios of hydrogen and SiCl 4 to temperatures 3500K, 4000K, 4500K and 5000K are 5: 1, 2.2: 1, 1.3: 1 and 1.1: 1, respectively.
  • the generation mechanism of the Si-H-Cl-based compound generated in the reactor 120 by the plasma is as follows.
  • the present invention can produce a large amount of hydrogen-related species, especially Si-H-Cl-based compounds using the plasma hydrogenation reaction.
  • gas and reactant supply unit 300 plasma generation space

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Silicon Compounds (AREA)

Abstract

L'invention concerne un appareil d'hydrogénation de plasma. Selon un mode de réalisation de la présente invention, l'appareil d'hydrogénation de plasma comprend : une partie d'alimentation en ondes électromagnétiques permettant de faire osciller des ondes électromagnétiques de fréquence prédéfinie ; un tube à décharge permettant de générer un plasma à partir des ondes électromagnétiques produites par la partie d'alimentation en ondes électromagnétiques et de l'hydrogène gazeux ou un mélange gazeux contenant de l'hydrogène ; une partie d'alimentation en gaz permettant d'injecter en volute l'hydrogène gazeux ou le mélange gazeux contenant de l'hydrogène dans le tube à décharge ; une partie d'alimentation en réactif permettant d'alimenter en un composé à base de Si-Cl le plasma généré à l'intérieur du tube à décharge ; un réacteur dans lequel un composé à base de Si-H-Cl est généré par la réaction d'atomes d'hydrogène ou d'ions dissociés par le plasma généré et le composé à base de Si-Cl ; et une partie de décharge de produit permettant de décharger le composé à base de Si-H-Cl généré dans le réacteur.
PCT/KR2012/003476 2011-05-18 2012-05-03 Appareil d'hydrogénation de plasma WO2012157871A2 (fr)

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Application Number Priority Date Filing Date Title
KR1020110047020A KR101329750B1 (ko) 2011-05-18 2011-05-18 플라즈마 수소화 반응 장치
KR10-2011-0047020 2011-05-18

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WO2012157871A3 WO2012157871A3 (fr) 2013-01-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014173574A1 (fr) * 2013-04-24 2014-10-30 Evonik Degussa Gmbh Procédé et dispositif de production d'octachlorotrisilane
CN112456456A (zh) * 2019-09-09 2021-03-09 Mak股份有限公司 一氧化氮发生装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112479212B (zh) * 2020-12-16 2022-06-28 亚洲硅业(青海)股份有限公司 一种六氯乙硅烷提纯装置及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933985A (en) * 1971-09-24 1976-01-20 Motorola, Inc. Process for production of polycrystalline silicon
US4102985A (en) * 1977-01-06 1978-07-25 Westinghouse Electric Corp. Arc heater production of silicon involving a hydrogen reduction
US4309259A (en) * 1980-05-09 1982-01-05 Motorola, Inc. High pressure plasma hydrogenation of silicon tetrachloride
JP2727728B2 (ja) * 1990-03-19 1998-03-18 三菱マテリアル株式会社 純物質の製造装置および純物質の製造方法
KR20070056965A (ko) * 2005-11-29 2007-06-04 칫소가부시키가이샤 고순도 다결정 실리콘의 제조 방법 및 제조 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933985A (en) * 1971-09-24 1976-01-20 Motorola, Inc. Process for production of polycrystalline silicon
US4102985A (en) * 1977-01-06 1978-07-25 Westinghouse Electric Corp. Arc heater production of silicon involving a hydrogen reduction
US4309259A (en) * 1980-05-09 1982-01-05 Motorola, Inc. High pressure plasma hydrogenation of silicon tetrachloride
JP2727728B2 (ja) * 1990-03-19 1998-03-18 三菱マテリアル株式会社 純物質の製造装置および純物質の製造方法
KR20070056965A (ko) * 2005-11-29 2007-06-04 칫소가부시키가이샤 고순도 다결정 실리콘의 제조 방법 및 제조 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014173574A1 (fr) * 2013-04-24 2014-10-30 Evonik Degussa Gmbh Procédé et dispositif de production d'octachlorotrisilane
US9845248B2 (en) 2013-04-24 2017-12-19 Evonik Degussa Gmbh Process and apparatus for preparation of octachlorotrisilane
CN112456456A (zh) * 2019-09-09 2021-03-09 Mak股份有限公司 一氧化氮发生装置

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KR101329750B1 (ko) 2013-11-14
KR20130027616A (ko) 2013-03-18
WO2012157871A3 (fr) 2013-01-24

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