201021902 六、發明說明： 【發明所屬之技術領域】 本發明涉及一種使用電漿以消除廢氣的系統，尤其是涉及一種使用低 壓和大氣壓之電漿以消除廢氣的系統，用以將包括半導體工業之各種電子 工業的風扇或泵等設備所排放出的有害氣體藉由依次通過低壓及大氣壓之 電漿而進行消除。 【先前技術】 在金屬或聚合物的表面處理、矽片或玻璃的介電質蝕刻、電漿化學氣 β相沈積（PECVD)以及其他的製程，使用電漿產生的高反應性化學物質為 是幕所周知的。隨著對小規模和低溫製程的需求，工業中主要利用低溫大 氣塵之電紫。電漿用於在半導體製程中的姓刻和沉積、金屬或聚合物的表 面處理、新材料的合成或其他等。 電漿可以在真空或大氣壓下產生。根據溫度，電讓可分類為高溫電裝 以及低溫電漿’南溫電襞的平均溫度高達攝氏數萬度而且離子化的程度 高’低溫電⑽平均氣溫略高於韓溫度並且離子化的程度低。 因為在製造各種半導體元件或液晶元件後所排放的氣體是有毒或易燃 的’危害人類健康和嚴重地影響全球暖化。因此，有害氣體必須盡可能處 ❹理之後才可排放。當前製造半導體元件所使用的氣艘包括下面幾種。 在独刻過程中’使用如CF4、SI?6、CHF3、2F6、siF4、、证以及阳 等含氟氣體祕刻氡化砍、氮切以及多㈣。對於紳⑪祕刻，使用 如（¾、Ha、BCI3、Si〇4、C〇4以及CHC13等含氣氣體。使用如HBr以及 Bn的含航體於溝槽_錢α2共關純細。在化學氣相沉積 (CVD)製程中’在腔體内加人⑦烧、&以及卿。 特別是:在PECVD製程中，pFC或aF3用於清理腔體内部。在這種 情況下’可忐產生S1F4。由於這些氣體具有毒性、腐蝕性以及強氧化性， 如果不處理就排出的話’可能會對人類健康和環境，還有生產設施產生負 面影響。 這些被注入裝置以製造半導體元件並且在蚀刻或CVD過程之後被排出 201021902 的氣體’包括微量未反應的氣體。 以前，包括未反應氣體的廢氣未經任何處理被排放到大氣中。然而， 目前’藉由處理排出的氣體以儘量努力減少氣體對人體健康或全球暖化的 影響’例如’半導體製造過程使用氣體洗滌器。 這種氣體洗滌器是一種用於處理半導體或液晶製造製程中所排出的氣 體的元件。這種氣體洗滌器分為主要氣體洗滌器以及次要氣體洗滌器。主 要氣體洗滌器直接連接在每個元件之後，次要氣體洗滌器裝配在主要氣體 洗滌器之後。 —主要氣體洗滌器主要分為乾式氣體洗滌器、燃燒氣體洗滌器以及濕式 氣體洗蘇器。最近’改良的產品如燃燒/濕式混合洗務器和燃燒/乾式混合洗 ©滌器開始生產。 以前，主要使用濕式氣體洗務器，藉由在腔體内注水而淨化和冷卻從 腔體穿過的氣體。 ,以一個簡單的製程和結構，濕式氣體洗滌器很容易製造並可以大規模 製備。然而，它不能處理不雑氣體而且不適合處理具有氫族的易燃氣體。 此外’因為會產生大量的廢水’它需要—個汙水處理H因此，”因為操 作和維修成本增加而不十分經濟。 燃燒氣體洗滌器可分為直接燃燒型以及間接燃燒型，其中直接燃燒型 中的廢氣通過氫燃燒器，而間接燃燒型的廢氣通過被熱源ς加熱的^體。201021902 VI. Description of the Invention: [Technical Field] The present invention relates to a system for using plasma to eliminate exhaust gas, and more particularly to a system for using low pressure and atmospheric pressure plasma to eliminate exhaust gas for use in the semiconductor industry. Harmful gases emitted by equipment such as fans or pumps in various electronics industries are eliminated by sequentially passing plasma at low pressure and atmospheric pressure. [Prior Art] In the surface treatment of metal or polymer, dielectric etching of ruthenium or glass, plasma chemical vapor phase deposition (PECVD), and other processes, the use of highly reactive chemicals generated by plasma is The scene is well known. With the demand for small-scale and low-temperature processes, the industry mainly uses the electro-violet of low-temperature atmospheric dust. Plasma is used for surnames and deposition in semiconductor processes, surface treatment of metals or polymers, synthesis of new materials, or the like. The plasma can be produced under vacuum or atmospheric pressure. According to the temperature, the electricity can be classified into high-temperature electric equipment and low-temperature plasma. The average temperature of the south temperature electric raft is up to tens of thousands of degrees Celsius and the degree of ionization is high. The low temperature electricity (10) average temperature is slightly higher than the Han temperature and the degree of ionization. low. Because the gases emitted after the manufacture of various semiconductor components or liquid crystal components are toxic or flammable, they endanger human health and seriously affect global warming. Therefore, harmful gases must be disposed of as much as possible before they can be discharged. The gas ships currently used to manufacture semiconductor components include the following. In the process of singular use of fluorine-containing gas such as CF4, SI?6, CHF3, 2F6, siF4, zhenzheng and yang, etc., slashing, nitrogen cutting and many (four). For the 绅11 secret engraving, use gas-containing gas such as (3⁄4, Ha, BCI3, Si〇4, C〇4, and CHC13. Use the inclusion bodies such as HBr and Bn in the groove_money α2 to close the fineness. In the chemical vapor deposition (CVD) process, '7 burns, & and qing are added to the cavity. In particular: in the PECVD process, pFC or aF3 is used to clean the inside of the chamber. In this case, Produces S1F4. Since these gases are toxic, corrosive and highly oxidizing, if they are discharged without treatment, they may have a negative impact on human health and the environment, as well as production facilities. These are injected into devices to manufacture semiconductor components and are etched. Or the gas discharged from 201021902 after the CVD process 'includes a small amount of unreacted gas. Previously, the exhaust gas including unreacted gas was discharged to the atmosphere without any treatment. However, at present, the gas discharged by the treatment is tried to reduce the gas as much as possible. Effects on human health or global warming 'for example' semiconductor manufacturing processes use gas scrubbers. This gas scrubber is used to process semiconductor or liquid crystal manufacturing processes. The gas component of the gas scrubber is divided into a main gas scrubber and a secondary gas scrubber. The main gas scrubber is directly connected after each component, and the secondary gas scrubber is assembled after the main gas scrubber. The main gas scrubbers are mainly divided into dry gas scrubbers, combustion gas scrubbers and wet gas scrubbers. Recently, 'improved products such as combustion/wet mixers and combustion/dry mixers have begun to produce. In the past, wet gas scrubbers were mainly used to purify and cool the gas passing through the chamber by injecting water into the chamber. With a simple process and structure, the wet gas scrubber is easy to manufacture and can be large. Scale preparation. However, it cannot handle non-gas and is not suitable for treating flammable gases with hydrogen group. In addition, 'because it will produce a large amount of wastewater' it needs a sewage treatment H, therefore, because of the increase in operating and maintenance costs Very economical. Combustion gas scrubbers can be divided into direct combustion type and indirect combustion type, in which the exhaust gas in the direct combustion type passes hydrogen combustion. , A type of indirect combustion exhaust gas heated by the heat source ς ^ thereof.
❹雖麵燒氣航縣對於祕氣體提供了-做好的處理鱗，但因為溫 度不夠高不足以分解如PFC _定物質，所以不適合處_时解的有= 氣體。此外，對二次副產品需要進行額外的清潔過程。 Q 最近，燃燒/濕式混合氣體洗務器因為經濟、安全以及效率而被使用。 但是’現行的混合氣體洗縣因為燃燒腔體的内徑必須增加 燃燒溫度，而需要-個大規模的安裝面積。近一步地， 腔體保持很長-段時間，它很容易受到雜。此外，因為結構燒 在通過熱雜_賴_水__分會堆_末。、 作會偶爾中斷，這就導致增加的操作和_㈣，轉低了4生=程的運 【發明内容】 4 201021902 本發明a在提供-種制健和大顏之電漿㈣除廢賴系統，藉 此Ϊ包括半導體工業之各種電子工f巾所的未反應雜《，在藉由 真空栗排X大氣之前利用健電聚進行轉，然後在排入大氣之後利用大 氣壓電漿分解。 本發明還旨在提供朗讎冑紗錢壓H以絲半導體廢氣的 混合系統。 本發明還旨在提供-種氣體祕H，藉由將包括半導體工業的各種工 業中的風^科裝置所排出的有害氣體通過低壓和大顏電漿而消除。 β在-實施例巾，使用健和械壓m;肖除廢氣的祕包括：一 低μ漿設備’其在包含真空雜、雕綠雜泵的處理制，安裝在 屑輪$和雜泵之間，並且透賴齡處職真錄雖應職轉系之未 反應的氣體卜大氣壓電麟備，其在錢屬下完全分解由碰電漿設備 所處理的氣體，並藉由旋轉果排入大氣；以及一通用濕式洗務器，其藉由 濕式洗蘇處理未反應氣體經過低壓電漿設備和大氣壓電漿設備所產生的穩 定水溶性副產品。 " ^低壓電練備可以包括具有幾微米至幾毫米孔徑的空心陰極電浆。大 氣壓電漿設備可以包括在2400〜2450MHz頻率範圍内所產生的微波電衆。 空心陰極電漿可以裝配複數個空心陰極。 微波電漿可以包括-高頻產生器’其產生高頻、—電源供應器，其供 ❿應電源至高頻產生器、-波導管，其傳送由高頻產生器所產生的高頻、一 放電管其將通過波導管所傳勒高頻以及從外界注的 -放電管支架，制於安裝放躲於其上…高頻電漿，管 傳送至放電管的高頻所產生、-有害氣體注入埠，其將有害氣體注入電裂、 以及一連接管，其與通用濕式洗滌器連接並提供電漿火焰的出口。 本發明使祕壓和大氣壓之賴以齡廢氣的系嶋由將廢氣以低麗 電激處理，然後再以大氣壓電漿内進行處理，而完全地消除了從真空腔體 所排出之未反應的氣體。 使用低壓和大氣壓之電㈣混合系統可以用於猶由半導體製程 排出之未反應的氣體。 【實施方式】 201021902 現在將參相關式在下文t描述實施例，所關Μ顯示出實施 例。本說明可以’具體為很多不同的形式並不偈限於在此描述的實施例。 這些實施例的提供對於本領域的技術人員而言使說明書貫穿完整，並完全 闡述了說明書的範圍。在描述中，熟知的特點和技術的詳細内容可以=略 以避免與現有實施例不必要的混淆。 在此使用的技術僅僅疋為了描述特定實施例而不是用於限制本發明。 在此使用地，單數形式“-，，及“該，，也包括複數形式，除非内容清楚地說明。 另外，術語一等的使用部代表數量的限制，而是代表至少存在—個所指項 目。術語“第一”’“第二’’等等的使用不能簡單地代表任何特定順序，但可以 說明獨立元素。另外，術語第一，第二等等的使用不代表任何順序或重要 攀性，但術語第-’第二等等用於將一個元素區別於另外一個。進一步可以 瞭解的是當說明書中使用術語“包含，，及/或“包含有，，，或“包括，，及/或“包括 有”的時候，代表存在所述特點，區域，整數，步驟，操作，元素及/或組成， 但不排除上述的一個或多個其他特點，區域，整數，步驟，操作，元素， 組成及/或組的存在或附加。 除非另作說明，在此使用的所有術語（包括技術和科技術語）對於本 領域的技術人員而言為公知的相同意思。可以進一步瞭解的是術語，如通 用字典中定義的術語，解釋為具有與相關技術内容中一致的意思，並且這 些術語不會進行理想化或者過於正式意義上的解釋，除非明文規定。 0 在圖式中，圖式中相似的符號說明代表相似的元素。為了便於說明， 擴大描繪了形狀，尺寸和區域等等。 第1圖顯示本發明實施例中使用低壓和大氣壓之電漿以消除廢氣的系 統的操作。 參考第1圖，未反應的碳氟基的製程氣體通過渦輪泵2〇和旋轉泵5〇 排到大氣中’而沒有在真空腔體10内反應。 渦輪泵20和旋轉泵50之間的間隔保持在低於大氣壓的壓力，低壓電 漿30在兩個泵之間提供。 在未反應的氣體藉由低壓電漿30處理後，以氮氣的清洗通過旋轉果 50 ’再被引入大氣壓電漿60。 此時’未反應的氣體伴隨氮氣被引入大氣壓電漿60。由處理未反應氣 201021902 體所產生的水雑副產品翻场職式絲器9G麵⑽理。例如 (F)與氫（H)結合並轉換為水溶性副產品氣化氯⑽）。 第2圖顯示本發明實施例中低壓電漿的址構。 參考第2圖，健錄30輕心陰極^。第 了空心陰極電漿的基本電極排列。 ^圖⑼顯不 如第2圖所示，絕緣體36夾在電極％、34之間。絕緣體 :具有孔洞38，從而形成孔洞結構。孔洞可以具有從幾微米至幾= 直Although the surface of the gas burning air county provides a good treatment of the secret gas, but because the temperature is not high enough to decompose the material such as PFC _, so it is not suitable for the solution. In addition, an additional cleaning process is required for the secondary by-product. Q Recently, combustion/wet gas scrubbers have been used because of their economy, safety and efficiency. However, the current mixed gas washing county requires a large-scale installation area because the inner diameter of the combustion chamber must increase the combustion temperature. Further, the cavity remains very long for a period of time and it is susceptible to miscellaneous. In addition, because the structure burns through the heat _ _ water__ _ heap will end. Occasionally, the operation will be interrupted occasionally, which leads to increased operation and _ (four), which is reduced by 4 students = Cheng Yun [invention] 4 201021902 The invention a provides a kind of health and beauty of the plasma (four) in addition to waste The system, by means of the unreacted impurities of various electronic workers in the semiconductor industry, is rotated by a thermoelectric polymerization before being evacuated by the vacuum, and then decomposed by atmospheric piezoelectric slurry after being discharged into the atmosphere. The present invention is also directed to providing a hybrid system in which the yam is used to compress H-wire semiconductor exhaust. The present invention is also directed to providing a gas secret H which is eliminated by passing a harmful gas discharged from a wind turbine in various industries including the semiconductor industry through a low pressure and a large plasma. The β-in the embodiment towel uses the mechanical and mechanical pressure m; the secret of the exhaust gas includes: a low μ pulp device, which is processed in a vacuum-containing, green-green pump, mounted on the scraper $ and the miscellaneous pump. Between, and through the age of the job, although the unreacted gas of the job is transferred to the atmosphere, it is completely decomposed under the charge of the gas treated by the plasma equipment, and is discharged by rotating the fruit. Atmospheric; and a universal wet scrubber that treats unreacted gases through a wet scrubbing process through a low-pressure plasma device and an atmospheric water-based slurry device to produce a stable water-soluble by-product. " ^Low-voltage power training can include hollow cathode plasma with a pore size of a few microns to a few millimeters. The atmospheric piezoelectric slurry device can include microwave power generated in the frequency range of 2400 to 2450 MHz. The hollow cathode plasma can be assembled with a plurality of hollow cathodes. The microwave plasma may include a high frequency generator that generates a high frequency, a power supply for supplying a power source to the high frequency generator, a waveguide that transmits a high frequency generated by the high frequency generator, The discharge tube will pass through the waveguide and transmit the high frequency and the discharge tube bracket from the outside, and the installation is placed on the high frequency plasma, and the tube is sent to the high frequency of the discharge tube, and the harmful gas is generated. A helium is injected which injects harmful gases into the electrical crack, and a connecting tube that is connected to the universal wet scrubber and provides an outlet for the plasma flame. The present invention allows the exhaust gas and the atmospheric pressure-dependent exhaust gas system to be treated with a low-voltage electric shock and then treated in an atmospheric piezoelectric slurry to completely eliminate the unreacted gas discharged from the vacuum chamber. An electric (four) hybrid system using low pressure and atmospheric pressure can be used for unreacted gases that are still discharged from the semiconductor process. [Embodiment] 201021902 The embodiment will now be described with reference to the correlation formula, and the embodiment will be shown. The description may be embodied in many different forms and not limited to the embodiments described herein. The provision of these embodiments is well established by those skilled in the art and the scope of the specification is fully described. In the description, the details of well-known features and techniques may be omitted to avoid unnecessary confusion with the prior embodiments. The technology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used herein, the singular forms "-," In addition, the term use section represents the limit of quantity, but rather represents at least one of the indicated items. The use of the terms "first", "second", etc., may not simply denote any particular order, but may dictate the individual elements. In addition, the use of the terms first, second, etc. does not mean any order or importance. However, the terms - 'second and the like are used to distinguish one element from another. It is further understood that the terms "including," and/or "including,", or "including, and/or" are used in the specification. When "including" is used, it means that the features, regions, integers, steps, operations, elements and/or components are present, but one or more of the other features, regions, integers, steps, operations, elements, components are not excluded. And/or the presence or addition of a group. All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art, unless otherwise specified. It is further understood that terms, such as those defined in the general dictionary, are interpreted as having meaning consistent with the relevant technical content, and such terms are not idealized or interpreted in an overly formal manner unless expressly stated otherwise. 0 In the drawings, similar symbolic descriptions in the drawings represent similar elements. For convenience of explanation, the shape, size, area, and the like are enlarged. Fig. 1 shows the operation of a system for using a low pressure and atmospheric pressure plasma to eliminate exhaust gas in the embodiment of the present invention. Referring to Fig. 1, the unreacted fluorocarbon-based process gas is discharged to the atmosphere through the turbo pump 2 and the rotary pump 5' without reacting in the vacuum chamber 10. The interval between the turbo pump 20 and the rotary pump 50 is maintained at a pressure below atmospheric pressure, and the low pressure plasma 30 is provided between the two pumps. After the unreacted gas is treated by the low pressure plasma 30, it is introduced into the atmospheric piezoelectric slurry 60 by the rotation of the rotating fruit 50'. At this time, the unreacted gas is introduced into the atmospheric piezoelectric slurry 60 with nitrogen gas. The water sputum by-product produced by the unreacted gas 201021902 is turned into a 9G surface (10). For example, (F) is combined with hydrogen (H) and converted to a water-soluble by-product vaporized chlorine (10)). Fig. 2 shows the structure of the low pressure plasma in the embodiment of the present invention. Referring to Figure 2, the health record 30 light heart cathode ^. The basic electrode arrangement of the first hollow cathode plasma. ^ (9) is not shown in Fig. 2, and the insulator 36 is sandwiched between the electrodes %, 34. Insulator: has a hole 38 to form a hole structure. Holes can have from a few microns to a few = straight
電極32、34可_導電金難成，如銅、銘、不 而絕緣體36可以由氧化銘、石英、強化玻璃、聚合物或其=他等 空心陰極電漿祕局部增強電場，當在兩個電極32、34之^ 的時，。由於兩個電極之間的強電場，自由電子經過突崩過程獲得能量。 *外界提電場超舰界值科候，帶條子量綱並開始放 當二^電子從陰極表面發出，並且施加更高的外部電壓，產生不 要外部電場而將粒子離子化的自給維持放電。 第3圖顯示-些通常使用氣體的帕申曲線。 、乂2第3圖’橫坐標（pd)代表以托耳為單位之勤p的的產物和 以么为為單位的電極間隙d，縱坐標代表麟電廢為如值的函數。Electrodes 32, 34 can be difficult to form conductive gold, such as copper, Ming, and not insulator 36 can be enhanced by electric field, such as oxidized Ming, quartz, tempered glass, polymer or its other hollow cathode plasma, when in two When the electrodes 32, 34 are ^. Due to the strong electric field between the two electrodes, free electrons gain energy through the sag process. * The external electric field exceeds the boundary value of the ship, with the sliver dimension and begins to release. The electrons are emitted from the surface of the cathode, and a higher external voltage is applied to generate a self-sustained sustain discharge that ionizes the particles without an external electric field. Figure 3 shows some of the Paschen curves that typically use gas.乂2Fig. 3 'The abscissa (pd) represents the product of the p-based unit and the electrode gap d in terms of y, and the ordinate represents the function of the nucleus waste as a value.
在帕申曲線的右侧，崩潰電塵隨如線性增加。這是因為電子在 壓和大電極間隙離子化的機會高。 ^ 在帕申曲線的左側’贿電職pd降低_增。對於小pd，影響離子 ，的機會非常有限電場以獲得需要的電子放大。在特 疋Pd值上’電子馨子錄力_最大值，並且黯電錢躲小值。 第4圖顯示了在常數如值處電極間隙為壓力p的函數。帛4圖顯示 了在給定之最小崩潰電壓的pd值處，電極間隙為壓力的函數 為了在高壓處通過崩潰區開始放電，電場必驗壯電極間隙小。因 此，需要數百微米的電極間隙，如第4圖所示。 相反地’在低屢下即使電極間隙為幾毫米也可以獲得放電。這說明不 僅僅渦輪泵2G和旋 5G之間在姆健射料生心陰極電槳，而 201021902 且藉由控機極_和細尺寸也可以簡單地產生心陰極電聚。 種電極 第5圖和第6 ®為顯示本發明各種實_中空^陰極電紫的各 結構的剖面圖。 在第5圖和第6圖中’ D代表空心陰極結構中上電極34的間隙，㈣ 心陰極結構包魏賴36和修32、34，並且d代表32或絕緣^ 36的較小_ 〇在實施例中，未反應的氣體從下電極32進人 34排出。 電極 如第5圖和第6圖所示’具有各種結構的孔洞38，或奶小 以應用於空心陰極電漿。On the right side of the Paschen curve, the crash dust increases linearly. This is because electrons have a high chance of ionization at the pressure and large electrode gap. ^ On the left side of the Paschen curve, the bribery job pd decreases _ increase. For small pds, the opportunity to affect ions is very limited to the electric field to obtain the required electron amplification. On the special Pd value, 'Electronic Xinli Recording Force' is the maximum value, and the money is hidden from the small value. Figure 4 shows the electrode gap as a function of pressure p at a constant such as a value. Figure 4 shows the electrode gap as a function of pressure at a given pd value of the minimum breakdown voltage. In order to begin discharge at a high pressure through the collapse zone, the electric field must have a small electrode gap. Therefore, an electrode gap of several hundred microns is required, as shown in Figure 4. On the contrary, the discharge can be obtained even if the electrode gap is several millimeters. This shows that not only between the turbo pump 2G and the rotary 5G, but also the cathode cathode electro-pitch can be easily generated by the control electrode and the fine size. Electrodes FIG. 5 and FIG. 6 are cross-sectional views showing respective structures of various solid-cathode cathode electro violets of the present invention. In Figures 5 and 6, 'D represents the gap of the upper electrode 34 in the hollow cathode structure, (4) the core cathode structure includes Weilai 36 and repairs 32, 34, and d represents a smaller of 32 or insulating ^ 36 In the embodiment, unreacted gas is discharged from the lower electrode 32 into the person 34. Electrodes As shown in Figures 5 and 6, 'holes 38 having various structures, or milk small, are applied to the hollow cathode plasma.
如第5圖和第6圖所*，孔洞38的各種結構導致孔洞％内各種電場 的非線性的分佈，並允許未反應氣體通過崩潰區分解。 例如，第5圖(a)的電場具有扇形，下電極32至上電極34的非線性分 佈，並且第6圖(a)的電場具有與第5圖(&)形狀相反的分佈。 第7圖為本發明實施例中具有複數個孔洞的空心陰極電漿反應器的橫 向剖面圖。 第7圖顯示了具有複數個孔洞4〇的空心陰極電漿。當然，可以應用第 5圖和第6圖的各種電極結構。如第7圖所示，具有複數個孔洞4〇的空心 陰極電漿可以安裝在連接渦輪泵20和旋轉泵50的連接管道内，用於處理 具有較大剖面的未反應氣體流。 第8圖為本發明實施例中具有複數個孔洞的空心陰極電漿反應器的縱 向剖面圖。 參考第8圖’具有複數個孔洞的空心陰極電漿反應器1〇〇根據連接渦 輪泵20和旋轉泵50的連接管道的剖面形狀可以具有矩形或圓形。孔洞和 另一個孔洞的距離可以為一個不影響獨立孔洞排氣的孔洞，特別地從 0.1mm 至 l〇mm。 第9圖為本發明實施例中固定於連接管道内的具有複數個孔洞的空心 陰極電漿反應器的剖面圖。 參考第9圖，具有複數個孔洞之空心陰極電漿反應器的模組2〇〇可以 包含一連接單元22、一空心陰極電漿反應器1〇〇、一安裝管道24以及一連 接單元52。連接單元22連接渦輪泵20，空心陰極電漿反應器100裝配有 201021902 複數個孔洞’在安裝管道中安裝具有複數個孔洞的空心陰極電梁反應器 100 ’而連接單元52與渦輪泵50連接。 未反應氣體12當其經過反應器1〇〇的複數個孔洞時藉由空心陰極電漿 分解’並在進入旋轉泵50之後如同已處理氣體54排至大氣中。模組2〇〇 允許渦輪泵20和旋轉泵5〇之間在處理線内易於安裝。 在第2圖至第9圖所示的實施例中，空心陰極電漿可以由直流以及6〇Hz 至10GHz的交流產生。 第10圖為本發明實施例中微波電漿反應器的結構刳面圖。 參考第10圖’微波電漿反應器3〇〇包含電源供應器5、高頻產生器15、 放電管140 ’波導管125、放電管支架156，渦流氣體注入埠158、額外氣 Φ 體供應埠164以及和燃料提供支架16〇。 電源供應器5供應電源至高頻產生器15。例如，如果高頻產生器15產 生微波，頻率範圍可以為2400MHz至2500MHz。在此情況下，高頻產生器 15稱作磁控管。從電源供應器5供應至磁控管的電壓可以為_3 〇至_4处乂。 將高頻產生器15所產生的高頻154引入波導管125。 放電管140,在距離波導管125的垂直端152之1/4g(g=波導管内的波 長)的位置具有一中心軸，且放電管14〇被安裝為垂直於波導管125，並且 可以由將高頻從其中傳送的絕緣體製成，如石英、強化玻璃、陶瓷、氧化 鋁以及其他等。 放電管140藉由放電管支架156支撐’並且裝配能夠將涡流氣體注入 放電管140的渦流氣體注入蟑158a、158b。渴流氣體注入槔158a、158b可 以為多個，並可以等距地安裝。 從渦流氣體注入埠158a、158b注入的渦流氣體在其流經放電管支架156 和放電管140的内壁時形成渦流。渦流氣體可以包含氧氣、氮氣、空氣、 惰性氣體、氫氣及其混合，並且用為電漿氣體、穩定在放電管14〇内產生 的氣體，並利用高溫電漿輻射熱量防止放電管14〇的損害。 額外氣體可以從支架160處裝配的額外氣體供應埠164供應至高頻電 漿110以輔助電滎化學反應。例如，當碳氫氣體作為額外氣體供應的時候， 可能產生包含電漿及燃料火焰的高溫、高能量的電漿火焰。 ' 當然’水蒸氣、氧氣或氫氣可以引入作為額外氣體。當分解包含氣氣 201021902 害氣體注入蜂170注入的有害氣體時，具有氫族⑻的額外氣體 將有害乳雜換為氟化氫（HP)，其可以藉岭漿化學反細易於處理。As shown in Figures 5 and 6, the various structures of the holes 38 result in a non-linear distribution of various electric fields within the % of the holes and allow unreacted gases to decompose through the collapse zone. For example, the electric field of Fig. 5(a) has a sector shape, the nonlinear distribution of the lower electrode 32 to the upper electrode 34, and the electric field of Fig. 6(a) has a distribution opposite to that of Fig. 5 (&). Figure 7 is a transverse cross-sectional view of a hollow cathode plasma reactor having a plurality of holes in an embodiment of the present invention. Figure 7 shows a hollow cathode plasma with a plurality of holes 4 turns. Of course, various electrode structures of Figs. 5 and 6 can be applied. As shown in Fig. 7, a hollow cathode plasma having a plurality of holes 4 可以 can be installed in a connecting pipe connecting the turbo pump 20 and the rotary pump 50 for treating a flow of unreacted gas having a large cross section. Figure 8 is a longitudinal cross-sectional view of a hollow cathode plasma reactor having a plurality of holes in an embodiment of the present invention. Referring to Fig. 8 'the hollow cathode plasma reactor 1 having a plurality of holes may have a rectangular shape or a circular shape according to the sectional shape of the connecting pipe connecting the turbine pump 20 and the rotary pump 50. The distance between the hole and the other hole may be a hole that does not affect the exhaust of the independent hole, in particular from 0.1 mm to l〇mm. Figure 9 is a cross-sectional view showing a hollow cathode plasma reactor having a plurality of holes fixed in a connecting pipe in the embodiment of the present invention. Referring to Fig. 9, a module 2 of a hollow cathode plasma reactor having a plurality of holes may include a connecting unit 22, a hollow cathode plasma reactor 1A, a mounting pipe 24, and a connecting unit 52. The connecting unit 22 is connected to the turbo pump 20, and the hollow cathode plasma reactor 100 is equipped with a plurality of holes 2010'902. A hollow cathode electric beam reactor 100' having a plurality of holes is installed in the mounting pipe, and the connecting unit 52 is connected to the turbo pump 50. The unreacted gas 12 is decomposed by the hollow cathode plasma as it passes through the plurality of holes of the reactor 1 and is discharged into the atmosphere as if it had been treated 54 after entering the rotary pump 50. Module 2〇〇 allows for easy installation between the turbo pump 20 and the rotary pump 5〇 within the process line. In the embodiments shown in Figures 2 through 9, the hollow cathode plasma can be produced by direct current and alternating current from 6 Hz to 10 GHz. Figure 10 is a cross-sectional view showing the structure of a microwave plasma reactor in an embodiment of the present invention. Referring to Fig. 10, the "microwave plasma reactor 3" includes a power supply 5, a high frequency generator 15, a discharge tube 140' waveguide 125, a discharge tube holder 156, a vortex gas injection port 158, and an additional gas Φ body supply. 164 and the fuel supply bracket 16〇. The power supply 5 supplies power to the high frequency generator 15. For example, if the high frequency generator 15 generates microwaves, the frequency can range from 2400 MHz to 2500 MHz. In this case, the high frequency generator 15 is called a magnetron. The voltage supplied from the power supply 5 to the magnetron may be _3 〇 to _4. The high frequency 154 generated by the high frequency generator 15 is introduced into the waveguide 125. The discharge tube 140 has a central axis at a position 1/4 g (g = wavelength in the waveguide) from the vertical end 152 of the waveguide 125, and the discharge tube 14 is mounted perpendicular to the waveguide 125, and can be The high frequency is made of an insulator that is transferred therein, such as quartz, tempered glass, ceramics, alumina, and the like. The discharge tube 140 is supported by the discharge tube holder 156' and is equipped with vortex gas injection 蟑 158a, 158b capable of injecting vortex gas into the discharge tube 140. The thirst flow gas injection ports 158a, 158b may be plural and may be mounted equidistantly. The vortex gas injected from the vortex gas injection ports 158a, 158b forms a vortex flow as it flows through the inner walls of the discharge tube holder 156 and the discharge tube 140. The vortex gas may contain oxygen, nitrogen, air, inert gas, hydrogen, and a mixture thereof, and is used as a plasma gas, stabilizes a gas generated in the discharge tube 14〇, and uses a high-temperature plasma to radiate heat to prevent damage of the discharge tube 14〇. . Additional gas may be supplied to the high frequency plasma 110 from the additional gas supply port 164 assembled at the rack 160 to assist in the electrowinning chemical reaction. For example, when hydrocarbon gas is supplied as an additional gas, a high temperature, high energy plasma flame containing plasma and fuel flame may be produced. 'Of course' water vapor, oxygen or hydrogen can be introduced as an additional gas. When decomposing contains gas 201021902 When the harmful gas is injected into the harmful gas injected by the bee 170, the extra gas having the hydrogen group (8) exchanges the harmful milk with hydrogen fluoride (HP), which can be easily treated by the chemical treatment of the slag.
再者’在支架160的上端，連接塊162可以裝配以允許與 蘇器易於連I 第11圖為本發明另一實施例中微波電漿反應器的結構剖面圖。 參考第11圖，從旋轉泵50排出的有害氣體通過連接管道132&、13沈 =入有害氣體注入埠134a、l34b。在本實施例中，放電管支架156的下端 藉由隔板190阻擋。當然，有害氣體連接管道可以為多個。 鲁 引=至有害氣體注入埠13知、1341)的有害氣體作為旋轉地流動的渴流 *1體。备有害氣體在經過微波電衆時，轉換為電漿副產品，並且被引入與 電漿氣體放電管18〇連接的濕式洗務器9〇。 第12圖為本發明實施例中第11圖的有害氣體注入埠的剖面圖。 參考第12圖，複數個有害氣體注入埠陳、⑽、⑽、⑽可以裝 =與=電管支架156的内壁正切的方向上的規則間距中。複數個有害氣 :ma、⑽、i34c、⑽能夠使有害氣體的旋轉氣流與渦流氣體 樣穩疋電漿，並藉由微波電纽善提高有害氣體處理的效率 鲁 注入埠134a、i34b、134c、⑽可以關於上方向成〇至％。角。〜 使用低壓和大氣壓之電漿⑴肖除廢氣的纟統，其伽大_微波 Γ除從真空腔體排出的有害氣體，可以工業地應用於消除來自包 工業的各種電子jif的空氣污染有害氣體。 實施例已經顯示和描述出來，對於本領域的技術人員而言，凡有在相 2之發明_下所作有關本發明之任何修飾更，皆仍應包括在本發明 意圖保護之範_。 另外’在不脫軸㈣實質範_情訂可崎本發明翻適於特定 =或材料的改進。因此，本發不舰於作為最佳實施鋼述本發明 的特定實關，可以包括财落在本發明意圖倾之料⑽實施例。 【圖式簡單說明】 …所^圖式其中提供關於本發明實施例的進一步理解並且結合與構 書的一部份，說明本發明的實施例並且描述一同提供對於本 201021902 發明實施例之原則的解釋。 圖式中： 第1圖顯示本發明實施例中使用低壓和大氣壓之電黎以消除廢氣 的系統的操作； 第2圖顯示本發明實施例中低壓電漿的結構； 第3圖顯示一些普通作用氣體的帕申曲線； 第4圖顯示在常數pd值處電極間隙為壓力p的函數； 第5圖和第6圖為顯示本發明各種實施例中空心陰極電漿的各種 電極結構的剖面圖； 第7圖為本發明實施例中具有複數個孔洞的空心陰極電漿反應器 _ 的橫向剖面圖； 第8圖為本發明實施例中具有複數個孔洞的空心陰極電漿反應器 的縱向剖面圖； 第9圖為本發明實施例中固定於連接管道内的具有複數個孔洞的 空心陰極電漿反應器的剖面圖； 第10圖為本發明實施例中微波電漿反應器的結構剖面圖； 第11圖為本發明另一實施例中微波電漿反應器的結構剖面圖； 第12圖為本發明實施例中第11圖的有害氣體注入琿分的剖面圖。 〇 【主要元件符號說明】 5 電源供應器 10 真空腔體 15 高頻產生器 12 未反應氣體 20 渦輪泵 22 連接單元 24 安裝管道 30 低壓電漿 32 電極/下電極 34 電極/上電極 11 201021902 36 絕緣體 38 孔洞 40 孔洞 50 旋轉泵 52 連接單元 54 已處理氣體 60 大氣壓電漿 90 通用濕式洗滌器 100 空心陰極電漿反應器 110 高頻電漿 φ 125 波導管 132a ' 132b 連接管道 134a、134b、134c、134d有害氣體注入埠 140 放電管 152 垂直端 154 高頻 156 放電管支架 158 渦流氣體注入埠 158a 渦流氣體注入埠 ©158b 渦流氣體注入璋 160 燃料提供支架 162 連接塊 164 額外氣體供應埠 170 有害氣體注入埠 180 電漿氣體放電管 190 隔板 200 模組 300 微波電漿反應器 12Further, at the upper end of the holder 160, the connecting block 162 can be assembled to allow easy connection with the applicator. Fig. 11 is a cross-sectional view showing the structure of the microwave plasma reactor in another embodiment of the present invention. Referring to Fig. 11, the harmful gas discharged from the rotary pump 50 is injected into the crucibles 134a, l34b through the connecting pipes 132 & In the present embodiment, the lower end of the discharge tube holder 156 is blocked by the partition 190. Of course, there may be multiple harmful gas connection pipes. Lu Xing = harmful gas injected into the 埠13, 1341) harmful gas as a thirsty flow *1 body. The harmful gas is converted into a plasma by-product when passing through the microwave power, and is introduced into the wet scrubber 9A connected to the plasma gas discharge tube 18. Fig. 12 is a cross-sectional view showing the harmful gas injection port of Fig. 11 in the embodiment of the invention. Referring to Fig. 12, a plurality of harmful gas injections, (, (10), (10), (10) can be mounted in a regular interval in the direction of the inner wall of the electric tube holder 156. A plurality of harmful gases: ma, (10), i34c, (10) can make the rotating gas flow of the harmful gas and the vortex gas sample stabilize the plasma, and improve the efficiency of the harmful gas treatment by microwave electric power to inject 埠134a, i34b, 134c, (10) It can be 〇 to % in the upper direction. angle. ~ Use low-pressure and atmospheric pressure plasma (1) to remove the exhaust gas system, its mega-microwave removes the harmful gas discharged from the vacuum chamber, and can be industrially applied to eliminate air pollution harmful gases from various electronic jifs from the packaging industry. . The embodiments have been shown and described, and any modifications to the invention made by those skilled in the art should be included in the scope of the invention. In addition, the invention is not adapted to the specific = or material improvement. Accordingly, the present invention is not limited to the specific implementation of the invention as a preferred embodiment of the invention, and may include an embodiment of the invention (10). BRIEF DESCRIPTION OF THE DRAWINGS [0009] Further understanding of the embodiments of the present invention, as well as a part of the construction and the description of the embodiments of the present invention, and the description of the embodiments of the present invention. Explanation. In the drawings: Fig. 1 shows the operation of a system for eliminating exhaust gas using low pressure and atmospheric pressure in the embodiment of the present invention; Fig. 2 is a view showing the structure of low pressure plasma in the embodiment of the present invention; The Pachen curve of the working gas; Figure 4 shows the electrode gap as a function of the pressure p at the constant pd value; Figures 5 and 6 are cross-sectional views showing various electrode structures of the hollow cathode plasma in various embodiments of the present invention. Figure 7 is a transverse cross-sectional view of a hollow cathode plasma reactor having a plurality of holes in an embodiment of the present invention; Figure 8 is a longitudinal section of a hollow cathode plasma reactor having a plurality of holes in an embodiment of the present invention; Figure 9 is a cross-sectional view of a hollow cathode plasma reactor having a plurality of holes fixed in a connecting pipe according to an embodiment of the present invention; Figure 10 is a cross-sectional view showing the structure of a microwave plasma reactor in an embodiment of the present invention; Figure 11 is a cross-sectional view showing the structure of a microwave plasma reactor according to another embodiment of the present invention; and Figure 12 is a cross-sectional view showing the injection of harmful gases in Figure 11 of the embodiment of the present invention. 〇【Main component symbol description】 5 Power supply 10 Vacuum chamber 15 High frequency generator 12 Unreacted gas 20 Turbo pump 22 Connection unit 24 Installation pipe 30 Low-voltage slurry 32 Electrode/lower electrode 34 Electrode/upper electrode 11 201021902 36 Insulator 38 Hole 40 Hole 50 Rotary pump 52 Connection unit 54 Processed gas 60 Atmospheric piezoelectric slurry 90 Universal wet scrubber 100 Hollow cathode plasma reactor 110 High frequency plasma φ 125 Waveguide 132a ' 132b Connecting pipes 134a, 134b , 134c, 134d harmful gas injection 埠 140 discharge tube 152 vertical end 154 high frequency 156 discharge tube bracket 158 vortex gas injection 埠 158a vortex gas injection 埠©158b vortex gas injection 璋 160 fuel supply bracket 162 connection block 164 additional gas supply 埠 170 Harmful gas injection 埠180 Plasma gas discharge tube 190 Separator 200 Module 300 Microwave plasma reactor 12