WO2012153764A1 - Circuit générateur d'impulsions - Google Patents

Circuit générateur d'impulsions Download PDF

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Publication number
WO2012153764A1
WO2012153764A1 PCT/JP2012/061875 JP2012061875W WO2012153764A1 WO 2012153764 A1 WO2012153764 A1 WO 2012153764A1 JP 2012061875 W JP2012061875 W JP 2012061875W WO 2012153764 A1 WO2012153764 A1 WO 2012153764A1
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Prior art keywords
transformer
semiconductor switch
generation circuit
pulse generation
pulse
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PCT/JP2012/061875
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English (en)
Japanese (ja)
Inventor
寺澤達矢
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日本碍子株式会社
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Priority to JP2013514031A priority Critical patent/JPWO2012153764A1/ja
Publication of WO2012153764A1 publication Critical patent/WO2012153764A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

Definitions

  • the present invention relates to a pulse generation circuit that continuously outputs a positive pulse and a negative pulse.
  • the high voltage pulse generating circuit includes a transformer, a first semiconductor switch, and a second semiconductor switch connected in series to both ends of a DC power supply unit, and a primary winding of the transformer having one end connected to an anode terminal of the first semiconductor switch.
  • This is a very simple circuit in which a diode is connected to the other end of the first semiconductor switch, and a diode is connected to the gate terminal of the first semiconductor switch.
  • the second semiconductor switch when the second semiconductor switch is turned on, the first semiconductor switch is also turned on, the voltage of the DC power supply unit is applied to the primary winding of the transformer, and inductive energy is accumulated in the transformer.
  • the second semiconductor switch when the second semiconductor switch is turned off, the first semiconductor switch is also turned off rapidly. Therefore, a very narrow high voltage pulse that rises very steeply is generated in the secondary winding of the transformer, and a higher voltage than the output terminal is generated. The pulse can be taken out.
  • a reactor having a dielectric is connected to the secondary side of the high voltage pulse generation circuit.
  • the high voltage pulse generated by the high voltage pulse generation circuit is supplied to the reactor, whereby discharge (dielectric barrier discharge) is performed in the reactor.
  • a high voltage pulse having a steep rise time and an extremely narrow pulse width can be supplied with a simple circuit configuration without using a plurality of semiconductor switches to which a high voltage is applied. Can do.
  • a diode is connected in parallel with the first semiconductor switch and the cathode side of the first semiconductor switch is used as an anode, so that it is used for discharge in the reactor. There is an effect that it is possible to regenerate excess energy that has not been regenerated in the DC power supply unit.
  • the negative pulse has a negative pulse with respect to the positive pulse amplitude.
  • the amplitude becomes extremely low, and energy cannot be efficiently supplied to the above-described discharge load.
  • the present invention has been made in view of such problems, and can efficiently supply energy to a discharge load whose energy absorption rate is improved by applying a negative pulse continuously with a positive pulse.
  • Another object of the present invention is to provide a pulse generation circuit that can efficiently perform various processes using a discharge load.
  • a pulse generation circuit includes a transformer, a DC power source connected to a primary side of the transformer, a discharge load connected to a secondary side of the transformer, and a primary of the transformer
  • a first semiconductor switch connected between one end of the winding and the DC power supply unit, and having an anode terminal, a cathode terminal, and a gate terminal, and connected between the cathode terminal of the first semiconductor switch and the DC power supply unit
  • the second semiconductor switch, and a diode having a cathode connected to the other end of the primary winding of the transformer and an anode connected to the gate terminal of the first semiconductor switch.
  • the transformer is connected to the primary side of the transformer after commutation to the secondary side of the transformer.
  • a regenerative blocking diode for blocking current regenerated on the primary side is connected.
  • a vibration waveform due to resonance may be generated on the secondary side of the transformer after commutation to the secondary side of the transformer.
  • the regeneration prevention diode may be connected between one end of the primary winding and the anode terminal of the first semiconductor switch.
  • the regeneration prevention diode is , Qb ⁇ 0.8 ⁇ Qa Is preferably satisfied.
  • the charge amount associated with the reverse recovery current is approximately 0 (A ⁇ sec).
  • a pulse generation circuit includes a transformer, an inductor connected in parallel to the primary side of the transformer, a discharge load connected to the secondary side of the transformer, and one end of the inductor A DC power source connected between the first and the other ends, a first semiconductor switch connected between one end of the inductor and the DC power source, and having an anode terminal, a cathode terminal, and a gate terminal, and the first semiconductor switch A second semiconductor switch connected between the cathode terminal and the DC power supply unit; and a diode having a cathode connected to the other end of the inductor and an anode connected to the gate terminal of the first semiconductor switch.
  • a current accumulation type pulse generation circuit in which a pulse is generated in the inductor and a voltage is boosted in the transformer when the first semiconductor switch is turned off due to turn-off of a conductor switch, between one end and the other end of the inductor, A regenerative blocking diode for blocking a current regenerated in the DC power supply unit after generation of a pulse in the inductor is connected.
  • a pulse generation circuit includes a transformer, a DC power source connected to a primary side of the transformer, a discharge load connected to a secondary side of the transformer, and a primary of the transformer
  • a semiconductor switch connected between one end of the winding and the DC power source; accumulation of inductive energy in the primary winding due to turn-on of the semiconductor switch; and secondary of the transformer in accordance with turn-off of the semiconductor switch
  • a current accumulation type pulse generation circuit that performs commutation to the side of the transformer, and prevents current regenerated on the primary side of the transformer after commutation to the secondary side of the transformer on the primary side of the transformer A regenerative blocking diode is connected.
  • the pulse generation circuit of the present invention energy can be efficiently supplied to a discharge load whose energy absorption rate is improved by applying a negative pulse continuously with a positive pulse. And various processes using the discharge load can be performed efficiently.
  • FIG. 1 is a circuit diagram showing a configuration of a pulse generation circuit (first pulse generation circuit) according to a first embodiment.
  • FIG. FIG. 2A is a waveform diagram showing the output timing of the control signal of the first pulse generation circuit
  • FIG. 2B is a waveform diagram showing a change in voltage on the secondary side of the transformer.
  • It is a circuit diagram which shows the structure of the pulse generation circuit which concerns on a comparative example.
  • FIG. 4A is a waveform diagram illustrating the output timing of the control signal of the pulse generation circuit according to the comparative example
  • FIG. 4B is a waveform diagram illustrating a change in voltage on the secondary side of the transformer.
  • FIG. 5A is a waveform diagram showing a change in voltage on the secondary side of the transformer when no regeneration prevention diode is connected (pulse generation circuit according to the comparative example), and FIG. 5B is a period during which the second semiconductor switch is on. It is a wave form diagram which shows the change of the regenerative current which flows after drive current and high voltage pulse generation.
  • FIG. 6A is a waveform diagram showing changes in the voltage on the secondary side of the transformer when the regenerative blocking diode according to the first embodiment is connected, and FIG. 6B is the reverse of the forward current flowing through the regenerative blocking diode according to the first embodiment. It is a wave form diagram which shows the change of a recovery current.
  • FIG. 6A is a waveform diagram showing a change in voltage on the secondary side of the transformer when no regeneration prevention diode is connected (pulse generation circuit according to the comparative example)
  • FIG. 5B is a period during which the second semiconductor switch is on. It is a wave form diagram which shows the change
  • FIG. 7A is a waveform diagram showing a change in the voltage on the secondary side of the transformer when the regeneration blocking diode according to the second embodiment is connected, and FIG. 7B is the reverse of the forward current flowing through the regeneration blocking diode according to the second embodiment. It is a wave form diagram which shows the change of a recovery current. It is a circuit diagram which shows the structure of the pulse generation circuit (2nd pulse generation circuit) which concerns on 2nd Embodiment. It is a circuit diagram which shows the structure of the pulse generation circuit (3rd pulse generation circuit) which concerns on 3rd Embodiment.
  • a pulse generation circuit according to the first embodiment includes a transformer 12 and a direct current connected to the primary side of the transformer 12, as shown in FIG. Connected between the power supply unit 14, the discharge load 16 connected to the secondary side of the transformer 12, the one end 18a of the primary winding 18 of the transformer 12 and the DC power supply unit 14, the anode terminal ⁇ A, the cathode terminal ⁇ K, and A first semiconductor switch 20 having a gate terminal ⁇ G, a second semiconductor switch 22 connected between the cathode terminal ⁇ K of the first semiconductor switch 20 and the DC power supply unit 14, and the primary winding 18 of the transformer 12 A diode 24 having a cathode connected to the end 18b and an anode connected to the gate terminal ⁇ G of the first semiconductor switch 20; Inductive energy is accumulated in the primary winding 18 due to the conduction of the first semiconductor switch 20, and commutation to the secondary side of the transformer 12 is performed along with the turn-off of the
  • the second semiconductor switch 22 is provided on the negative electrode terminal 14a side of the DC power supply unit 14, but it goes without saying that the same effect can be obtained even if provided on the positive electrode terminal 14b side.
  • the second semiconductor switch 22 may be a self-extinguishing type or a commutation-extinguishing type device.
  • the metal oxide for power in which an avalanche type diode 26 is built in reverse parallel is used.
  • a semiconductor field effect transistor (hereinafter referred to as a power MOSFET 28) 28 is used.
  • a control signal Sc from the gate drive circuit 30 is supplied to the gate of the power MOSFET 28, and the gate drive circuit 30 controls on / off of the power MOSFET 28.
  • the first semiconductor switch 20 can be a current control type device or a self-extinguishing type or a commutation extinguishing type device.
  • the voltage increase rate (dv / An SI thyristor having a very large tolerance against dt) and a high voltage rating is used.
  • a regenerative blocking diode 32 for blocking current regenerated to the primary side of the transformer 12 after commutation to the secondary side of the transformer 12 is connected to the primary side of the transformer 12. It is configured. Specifically, the regeneration prevention diode 32 is connected between one end 18 a of the primary winding 18 and the anode terminal ⁇ A of the first semiconductor switch 20. In this case, the anode terminal of the regeneration prevention diode 32 is connected to one end 18 a of the primary winding 18, and the cathode terminal is connected to the anode terminal ⁇ A of the first semiconductor switch 20.
  • the operation of the first pulse generation circuit 10A will be described with reference to the circuit diagram of FIG. 1 and the operation waveform diagrams of FIGS. 2A and 2B.
  • the first semiconductor switch 20 is turned on by the electric field effect applied between the gate terminal ⁇ G and the cathode terminal ⁇ K. Since the rise of the anode current of the first semiconductor switch 20 is suppressed by the primary winding 18 of the transformer 12, a normal turn-on is performed only by the field effect. Needless to say, a gate current may be positively supplied to the gate terminal ⁇ G of the first semiconductor switch 20 through a resistor connected in parallel with the diode 24 or through a resistor.
  • a constant negative voltage (negative pulse Pon) is output between the output terminals ⁇ o1 and ⁇ o2 of the secondary winding 34 of the transformer 12 (See FIG. 2B).
  • the current I2 flowing through the secondary winding 34 is only the charging current and discharging current to the discharge load 16, and the waveform is also a waveform according to the negative polarity pulse Pon.
  • the supply of the control signal Sc between the gate and the source of the second semiconductor switch 22 is stopped, whereby the second semiconductor switch 22 is turned off and the current from the cathode of the first semiconductor switch 20 is also zero.
  • the current I1 of the primary winding 18 circulates through a path constituted by the anode terminal ⁇ A of the first semiconductor switch 20 ⁇ the gate terminal ⁇ G of the first semiconductor switch 20 ⁇ the anode of the diode 24 ⁇ the cathode of the diode 24. That is, the discharge of the carriers accumulated in the first semiconductor switch 20 is started from time t1, and the output voltage Vout slightly increases.
  • the first semiconductor switch 20 rapidly enters the off state. Then, the generation of the high voltage pulse Pout is started, and the output voltage Vout is sharply increased by the induced electromotive force generated in the transformer 12. Thereafter, at the time t2 when the output current I2 becomes 0 (A), the high voltage pulse Pout peaks.
  • the peak value Vp of the high voltage pulse Pout is determined by the energy transferred to the secondary side of the transformer 12 and the equivalent capacity C of the discharge load 16 or the discharge characteristics (voltage-current characteristics) of the discharge load 16. If the equivalent capacitance of the electric capacitance of the first semiconductor switch 20 is C, the pulse width Tp (half width) of the high voltage pulse Pout is approximately 2/3 ⁇ ⁇ (LC).
  • the current flowing through the excitation inductance on the primary side of the transformer 12 is transferred to the discharge load 16 connected between the output terminals ⁇ o1 and ⁇ o2 via the transformer 12. Shed. At this time, a large pulse voltage is generated between the output terminals ⁇ o1 and ⁇ o2, and a discharge is generated in the discharge load 16.
  • the diode 40 is connected in parallel to the first semiconductor switch 20 as in the pulse generation circuit 100 according to the comparative example shown in FIG.
  • the output timing of the control signal Sc of the pulse generation circuit 100 according to the comparative example is shown in FIG. 4A, and the output voltage waveform on the secondary side of the transformer 12 is shown in FIG. 4B.
  • the pulse generation circuit 100 performs the following operation. That is, the general semiconductor switch including the first semiconductor switch 20 has a parasitic capacitance component. Therefore, not all the current commutated to the secondary side of the transformer 12 flows to the discharge load 16. A current flows to charge the 20 parasitic capacitors.
  • the discharge load 16 consumes energy due to the discharge, but not all is consumed, or a large amount of energy may remain without causing a discharge.
  • the remaining energy is released through the excitation inductance of the transformer 12 (current flows through the excitation inductance of the transformer 12), and the energy is transferred to the excitation inductance of the transformer 12 again.
  • the first path is a path toward the discharge load 16 once again, and the second path is connected in reverse parallel to the DC power supply unit 14, the antiparallel diode 26 of the second semiconductor switch 22, and the first semiconductor switch 20. This is a path connecting the diodes 40.
  • the voltage generated in the primary winding 18 of the transformer 12 is clamped by the voltage generated in the DC power supply unit 14, the antiparallel diode 26 of the second semiconductor switch 22, and the antiparallel diode 40 of the first semiconductor switch 20. Most of it flows in the second path.
  • the flow of current through the second path is an operation for regenerating energy in the DC power supply unit 14.
  • the pulse generation circuit 100 since a large amount of regenerative current flows on the primary side of the transformer 12, the current directed to the discharge load 16 on the secondary side of the transformer 12 decreases, After the voltage pulse Pout is generated, only a few pulses Pm having a negative polarity appear as shown in FIG. 4B.
  • the peak value of the high voltage pulse Pout when the capacitor is connected instead of the discharge load 16 and the antiparallel diode 40 connected in parallel with the first semiconductor switch 20 is removed is Vp, and thereafter Vm
  • the radical generated by the high voltage pulse Pout at the discharge load 16 is moved by the negative pulse Pm that is subsequently generated to perform film formation or the like. Assuming the case, since the energy due to the negative pulse Pm is extremely small, radicals cannot be moved sufficiently, and film formation or the like as designed may not be performed.
  • the above-described method of regenerating the energy accumulated in the discharge load 16 to the DC power supply unit 14 has a problem that the regenerative efficiency is low and does not contribute much to the efficiency of the power source. This means that energy to be returned to the discharge load 16 is unnecessarily released to the primary side of the transformer 12, and there is a problem that energy cannot be efficiently supplied to the discharge load 16.
  • a regenerative blocking diode 32 is connected between one end 18a of the primary winding 18 and the first semiconductor switch 20, as shown in FIG.
  • the vibration waveform is a waveform in which a pulse with a positive polarity (positive pulse Pp) and a pulse with a negative polarity (negative pulse Pm) are alternately arranged
  • the radical generated by the high voltage pulse Pout (Pp) continues.
  • the radicals are moved by the negative pulse Pm output, and film formation or the like is performed as designed.
  • the discharge load 16 is a load whose energy absorption rate is improved by applying the negative pulse Pm in succession to the positive pulse Pp.
  • the discharge load 16 can efficiently supply energy to the discharge load 16. Become.
  • of the negative pulse Pm when a capacitor is connected instead of the discharge load 16 is 50% to 100% of the peak value
  • it is 70% or more and 100% or less of the peak value
  • a forward bias voltage is applied to the regeneration blocking diode 32, so that a forward current (positive current) flows.
  • the high voltage pulse Pout is generated.
  • the period until the first semiconductor switch 20 is turned off (first semiconductor switch 20). (A period until the carrier in the switch 20 is discharged), a forward current flows, a high voltage pulse Pout is generated, and then a reverse bias voltage is applied to the regenerative blocking diode 32 in order to shift to a regenerative operation. Become.
  • the regenerative blocking diode 32 is Qb ⁇ 0.8 ⁇ Qa Is preferably satisfied, more preferably Qb ⁇ 0.5 ⁇ Qa It is.
  • FIG. 5A to FIG. 7B show experimental results when the regenerative blocking diode 32 is not connected and when two types of diodes (diodes according to Examples 1 and 2) are used as the regenerative blocking diode 32, respectively.
  • the diode according to the first embodiment is a fast recovery diode
  • the diode according to the second embodiment is a SiC diode.
  • the regenerative blocking diode 32 When the regenerative blocking diode 32 is not connected, after the high voltage pulse Pout is generated, the voltage induced in the primary winding 18 is the power supply voltage E, the forward voltage of the diode 26, and the diode 40, as shown in FIG. As shown in FIG. 5B, the regenerative current Ia starts to flow from the time when the sum of the forward voltages is reached.
  • the forward current Id flows during the period Ton in which the first semiconductor switch 20 and the second semiconductor switch 22 are conductive, and the high voltage pulse Pout
  • the reverse recovery current Ib flows from the time when the voltage induced in the primary winding 18 becomes the sum of the power supply voltage E and the forward voltage of the diode 26, as shown in FIG.
  • the charge amount Qb associated with the reverse recovery current Ib is about 45% of the charge amount Qa associated with the regenerative current Ia when the regenerative blocking diode 32 is not connected, and satisfies Qb ⁇ 0.5 ⁇ Qa.
  • of the negative pulse Pm generated continuously with the high voltage pulse Pout is 80% of the peak value
  • of the negative pulse Pm is larger than when the regenerative blocking diode 32 is not connected. Therefore, by using the diode according to the first embodiment as the regeneration prevention diode 32, energy can be supplied to the discharge load 16 more efficiently than when the regeneration prevention diode 32 is not connected.
  • the reverse recovery current Ib of the diode according to Example 2 is almost 0 (A). Accordingly, the charge amount Qb associated with the reverse recovery current Ib is almost 0 (A ⁇ sec).
  • of the negative pulse Pm generated continuously with the high voltage pulse Pout is 90% of the peak value
  • of the negative pulse Pm is larger than that of the first embodiment. Therefore, energy can be supplied to the discharge load 16 more efficiently by using the diode according to the second embodiment as the regeneration blocking diode 32.
  • the connection location is arbitrary as long as it can be blocked.
  • the connection location is arbitrary as long as it can be blocked.
  • a current return path in the off transition period of the first semiconductor switch 20 after the second semiconductor switch 22 is turned off can be cited.
  • a pulse generation circuit according to the second embodiment (hereinafter referred to as a second pulse generation circuit 10B) will be described with reference to FIG.
  • the second pulse generation circuit 10B has substantially the same configuration as the first pulse generation circuit 10A described above, but an inductor 50 is connected in parallel to the primary side of the transformer 12, and a regenerative blocking diode is connected to one end 50a of the inductor 50. 32 is connected to one end 18 a of the primary winding 18 of the transformer 12. The other end 50 b of the inductor 50 is connected to the positive terminal 14 b of the DC power supply unit 14, the cathode of the diode 24, and the primary winding 18 of the transformer 12. The difference is that the end 18b is connected. In this case, the transformer 12 functions as a step-up transformer.
  • the second pulse generation circuit 10B when the second semiconductor switch 22 and the first semiconductor switch 20 are turned on, inductive energy is accumulated in the inductor 50. Thereafter, when the second semiconductor switch 22 is turned off, the first semiconductor switch 20 is also turned off rapidly, so that a high voltage pulse Pout is generated in the inductor 50, and the high voltage pulse Pout is boosted by the transformer 12 to the discharge load 16. Will be applied. After the high voltage pulse Pout is generated, the regenerative blocking diode 32 is present, so that no regenerative current flows toward the DC power supply unit 14, and the resonance circuit is configured by the inductor 50 and the discharge load 16. In the circuit, a vibration waveform is generated due to resonance of the remaining energy after generation of the high voltage pulse Pout, and this vibration waveform is applied to the discharge load 16.
  • the second pulse generation circuit 10B it becomes possible to efficiently supply energy to the discharge load 16 whose energy absorption rate is improved by applying the negative pulse Pm continuously with the positive pulse Pp. .
  • electromagnetic noise may occur in the transformer 12 and the discharge load 16 due to resonance. This electromagnetic noise is superimposed on the control signal Sc to the second semiconductor switch 22, for example, and the second semiconductor switch 22 may cause a malfunction.
  • the transformer 12 and the discharge load 16 can be separated from the second semiconductor switch 22 and the gate drive circuit 30, so that electromagnetic noise generated in the transformer 12 and the discharge load 16 is not generated. It is possible to avoid superimposition on the control signal Sc to the second semiconductor switch 22.
  • a pulse generation circuit when used for a large-scale facility such as a factory production line (film formation, surface treatment, etc.), a deodorization facility, a harmful gas decomposition facility, etc., a high voltage is used as the direct current voltage of the direct current power supply unit 14. Since the demand for downsizing the pulse generation circuit is secondary, a large SI thyristor can be used as the first semiconductor switch 20, and as a result, the second semiconductor switch 22 can be used.
  • the power MOSFET 28 could be used (see Japanese Patent Nos. 4418212 and 4418212).
  • the connection of the first semiconductor switch 20 and the diode 24 is omitted as shown in FIG.
  • the third pulse generation circuit 10C is connected between the transformer 12, the DC power supply unit 14 and the discharge load 16 described above, and one end 18a of the primary winding 18 of the transformer 12 and the DC power supply unit 14.
  • a semiconductor switch 52 having a configuration similar to that of the second semiconductor switch 22, and accumulation of inductive energy in the primary winding 18 due to conduction of the semiconductor switch 52 due to turn-on of the semiconductor switch 52 and turn-off of the semiconductor switch 52.
  • This is a current accumulation type pulse generation circuit in which commutation to the secondary side of the transformer 12 is performed.
  • a regeneration blocking diode 32 that blocks current regenerated on the primary side of the transformer 12 after commutation to the secondary side of the transformer 12 is connected to the primary side of the transformer 12. Configured. Specifically, the regeneration prevention diode 32 is connected between the one end 18 a of the primary winding 18 and the semiconductor switch 52. Also in this case, the anode terminal of the regeneration prevention diode 32 is connected to one end 18 a of the primary winding 18, and the cathode terminal is connected to the semiconductor switch 52.
  • the operation of the third pulse generating circuit 10C will be briefly described.
  • the control signal Sc is supplied from the gate drive circuit 30 between the gate and the source of the semiconductor switch 52, the semiconductor switch 52 is turned on from off.
  • a constant negative voltage (negative pulse Pon) is output between the output terminals ⁇ o1 and ⁇ o2 of the secondary winding 34 of the transformer 12.
  • the waveform of the current I2 flowing through the secondary winding 34 is also a waveform according to the negative polarity pulse Pon.
  • the semiconductor switch 52 is turned off.
  • the current flowing through the primary excitation inductance of the transformer 12 is commutated through the transformer 12 to the discharge load 16 connected between the output terminals ⁇ o1 and ⁇ o2.
  • a large high voltage pulse Pout is generated between the output terminals ⁇ o1 and ⁇ o2, and a discharge is generated in the discharge load 16.
  • the vibration waveform is a waveform in which the positive pulse Pp and the negative pulse Pm are alternately continued, energy can be efficiently supplied to the discharge load 16.
  • the negative pulse Pm having the amplitude in the above-described preferable range can be obtained. Can be output continuously with the positive pulse Pp. If the first semiconductor switch 20 is omitted, a high voltage exceeding the withstand voltage may be applied to the second semiconductor switch 22, but in order to reduce the voltage applied to the second semiconductor switch 22, Increasing the turns ratio n can be mentioned.
  • the third pulse generation circuit 10C it is not necessary to connect the large first semiconductor switch 20 (for example, SI thyristor) and the diode 24 as switching elements, and only the semiconductor switch 52 (power MOSFET 28, etc.) is sufficient. Therefore, even when combined with the regenerative blocking diode 32, the size can be reduced, and it can be easily applied to applications to automobiles and sterilization processes where arrangement space is limited.
  • the pulse generation circuit according to the present invention is not limited to the above-described embodiment, and various configurations can be adopted without departing from the gist of the present invention.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Generation Of Surge Voltage And Current (AREA)

Abstract

L'invention concerne un circuit (10A) générateur d'impulsions du type à stockage de courant, caractérisé par le stockage d'énergie inductive circulant vers un enroulement primaire (18) du fait de la conduction dans un premier interrupteur (20) à semiconducteur en raison de la mise sous tension d'un deuxième interrupteur (22) à semiconducteur, et par la commutation vers le côté secondaire d'un transformateur (12) du fait du passage à l'état bloqué du premier interrupteur (20) à semiconducteur en raison de la mise hors tension du deuxième interrupteur (22) à semiconducteur, et caractérisé en ce qu'une diode (32) s'opposant à la récupération, qui empêche qu'un courant soit récupéré du côté primaire du transformateur (12) après la commutation vers le côté secondaire du transformateur (12), est reliée au côté primaire du transformateur (12). Plus précisément, la diode (32) s'opposant à la récupération est branchée entre une extrémité (18a) de l'enroulement primaire (18) et une borne d'anode (φA) du premier interrupteur (20) à semiconducteur.
PCT/JP2012/061875 2011-05-12 2012-05-09 Circuit générateur d'impulsions WO2012153764A1 (fr)

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JP2011106901 2011-05-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110178298A (zh) * 2016-12-29 2019-08-27 斯堪的诺维亚系统公司 电脉冲发生模块与储存电容器、续流二极管和在充电期间复位的变压器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006025543A (ja) * 2004-07-08 2006-01-26 Ngk Insulators Ltd パルス電源
JP2006166602A (ja) * 2004-12-07 2006-06-22 Ngk Insulators Ltd 放電装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006025543A (ja) * 2004-07-08 2006-01-26 Ngk Insulators Ltd パルス電源
JP2006166602A (ja) * 2004-12-07 2006-06-22 Ngk Insulators Ltd 放電装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110178298A (zh) * 2016-12-29 2019-08-27 斯堪的诺维亚系统公司 电脉冲发生模块与储存电容器、续流二极管和在充电期间复位的变压器
US10819320B2 (en) 2016-12-29 2020-10-27 Scandinova Systems Ab Arrangement comprising an electrical pulse generating module
CN110178298B (zh) * 2016-12-29 2021-03-09 斯堪的诺维亚系统公司 电脉冲发生模块与储存电容器、续流二极管和在充电期间复位的变压器

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