WO2012151792A1 - 液晶显示器、彩色滤光片基板、薄膜晶体管基板及其制法 - Google Patents

液晶显示器、彩色滤光片基板、薄膜晶体管基板及其制法 Download PDF

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WO2012151792A1
WO2012151792A1 PCT/CN2011/077768 CN2011077768W WO2012151792A1 WO 2012151792 A1 WO2012151792 A1 WO 2012151792A1 CN 2011077768 W CN2011077768 W CN 2011077768W WO 2012151792 A1 WO2012151792 A1 WO 2012151792A1
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thin film
film transistor
substrate
conductive material
transparent conductive
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English (en)
French (fr)
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陈世烽
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/375,638 priority Critical patent/US8879035B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs

Definitions

  • the present invention relates to a liquid crystal display, and more particularly to a liquid crystal display, a color filter substrate, a thin film transistor substrate and a method for fabricating the same. .
  • the crystal display mainly comprises two glass substrates and a liquid crystal layer, wherein the upper glass substrate is provided with a color filter (Color) Filter); and the lower glass substrate is provided with a thin film transistor and a pixel electrode.
  • Color filters contain colored photoresist and black matrix (Black Matrix). The position of the color photoresist corresponds to the pixel electrode. The black matrix is formed between the color photoresists. Generally, the black matrix usually needs to be subjected to a step of coating, exposure, and development to be formed on the surface of the upper glass substrate.
  • the aforementioned black matrix is indispensable in the color filter of the existing TFT-LCD.
  • vertical alignment vertical In the case of the alignment type TFT-LCD, the liquid crystal is in a vertical state without the electric field control and blocks the light, so that the overall picture is completely black at this time, and there is no light leakage.
  • the metal line connecting the pixel electrode changes the liquid crystal angle on the pixel electrode due to the transmission of the voltage signal, thereby causing a light leakage problem. Therefore, the black matrix is used to correspondingly shield the metal lines around the pixel electrodes to avoid light leakage.
  • the current TFT-LCD manufacturing process must go through a black matrix production process. If the TFT-LCD manufacturing process can eliminate the problem of light leakage, the black matrix manufacturing process will be omitted, which will save production costs and improve production efficiency.
  • An object of the present invention is to provide a liquid crystal display, a color filter substrate, a thin film transistor substrate, and a method of fabricating the same, to omit the fabrication of a black matrix.
  • a liquid crystal display includes: a color filter substrate including a common electrode; and a thin film transistor substrate disposed under the color filter substrate and including a pixel matrix and a transparent conductive material
  • the pixel matrix includes a plurality of thin film transistor units, pixel electrodes, and metal signal lines; the transparent conductive material is disposed on the pixel matrix and spaced apart by a protective layer, and correspondingly covers the thin film transistor unit and the a region of the metal signal line, wherein a voltage difference between the transparent conductive material and the common electrode is smaller than a starting voltage of the liquid crystal molecules; and a liquid crystal layer interposed between the thin film transistor substrate and the color filter Between the substrates.
  • the thin film transistor substrate includes a lower glass substrate, wherein the pixel matrix is formed on a surface of the lower glass substrate; and the color filter substrate includes an upper glass substrate and a a color photoresist layer, wherein the color photoresist layer is formed on a surface of the upper glass substrate, and the common electrode is disposed on the color photoresist layer.
  • the metal signal line includes a plurality of scan lines and a plurality of signal lines, each of the scan lines and each of the signal lines being vertically staggered with each other; each of the thin film transistor units
  • the gate and the source are respectively connected to one of the scan lines and one of the signal wires, and the drain thereof is connected to one of the pixel electrodes.
  • the transparent conductive material covers the scan wiring or the signal wiring or covers the scan wiring and the signal wiring at the same time.
  • the transparent conductive material is at the same potential as the common electrode.
  • the present invention further provides a thin film transistor substrate disposed under a color filter substrate having no black matrix, and including a lower glass substrate, a pixel matrix, and a transparent conductive material, the pixel Forming a matrix on the surface of the lower glass substrate and including a plurality of thin film transistor units, pixel electrodes, and metal signal lines; the transparent conductive material is disposed on the pixel matrix and spaced apart by a protective layer, and correspondingly covering the And a region of the thin film transistor unit and the metal signal line, and a voltage difference between the transparent conductive material and a common electrode of the color filter substrate is smaller than a starting voltage of the liquid crystal molecules.
  • the metal signal line includes a plurality of scan lines and a plurality of signal lines, each of the scan lines and each of the signal lines being vertically staggered with each other; each of the thin film transistor units
  • the gate and the source are respectively connected to one of the scan lines and one of the signal wires, and the drain thereof is connected to one of the pixel electrodes.
  • the transparent conductive material covers the scan wiring or the signal wiring or covers the scan wiring and the signal wiring at the same time.
  • the transparent conductive material is at the same potential as the common electrode.
  • each of the pixel electrodes corresponds to one of red, green or blue photoresist of the color photoresist layer of the color filter substrate.
  • the present invention further provides a color filter substrate disposed above the thin film transistor substrate and including an upper glass substrate, a color photoresist layer, and a common electrode, wherein the color photoresist layer is formed on the
  • the surface of the upper glass substrate is composed of red, green, and blue photoresists, wherein the color filter substrate does not have a black matrix at a position corresponding to the transparent conductive material; the common electrode is formed in the color On the photoresist layer.
  • the invention further provides a method for fabricating a thin film transistor substrate, comprising the steps of: providing a glass substrate; simultaneously forming a scan wiring and a gate of the thin film transistor unit on the surface of the lower glass substrate; forming an insulating layer on the surface of the lower glass substrate and corresponding to the thin film transistor Forming a semiconductor layer of the thin film transistor unit on the insulating layer; forming a signal wiring on the surface of the upper glass substrate and correspondingly forming a source and a drain of the thin film transistor unit corresponding to the position of the semiconductor layer on the thin film transistor unit, wherein the signal wiring is
  • the scan lines are vertically staggered with each other; a first protective layer is formed on the insulating layer and the thin film transistor unit, and a first protective layer corresponding to the drain of the thin film transistor unit is etched to expose the drain of the thin film transistor unit; a pixel electrode is formed on the surface of the layer, wherein the pixel electrode corresponds to the drain of the thin film transistor unit; the second protective layer
  • the semiconductor layer comprises an undoped amorphous silicon layer and a doped amorphous silicon layer.
  • the material of the pixel electrode and the transparent conductive material is indium tin oxide.
  • the insulating layer, the first protective layer and the second protective layer are made of silicon nitride.
  • the invention mainly replaces the black matrix by covering the transparent conductive material over the non-pixel electrode region and making it at the same potential as the common electrode on the color filter to avoid liquid crystal rotation between the two. Function, and then omit the production of the black matrix.
  • the invention mainly replaces the black matrix by covering the transparent conductive material over the non-pixel electrode region and making it at the same potential as the common electrode on the color filter to avoid liquid crystal rotation between the two. Function, and then omit the production of the black matrix.
  • Figure 1 is a partial plan view showing a first embodiment of a liquid crystal display of the present invention.
  • Fig. 2 is a cross-sectional view taken along line AA of Fig. 1 .
  • 3A to 3G are flowcharts showing a preferred embodiment of a method of fabricating a thin film transistor substrate of a liquid crystal display of the present invention.
  • Figure 4 is a partial plan view showing a second embodiment of the liquid crystal display of the present invention.
  • Fig. 5 is a cross-sectional view taken along line BB of Fig. 4 .
  • FIG. 1 is a partial plan view of a first embodiment of a liquid crystal display device of the present invention
  • FIG. 2 is a cross-sectional view taken along line AA of FIG.
  • the liquid crystal display comprises a color filter substrate 1, a thin film transistor substrate 2 and a liquid crystal layer 3.
  • the color filter substrate 1 includes an upper glass substrate 10, a color photoresist layer 11, and a common electrode 12 (Common Electrode).
  • the color photoresist layer 11 is disposed on the surface of the upper glass substrate 10, and includes red, green, and blue photoresists arranged neatly, wherein the red, green, and blue photoresists are deposited on the surface by coating, exposure, development, and the like.
  • the surface of the glass substrate 10. does not include a black matrix (Black Matrix).
  • the common electrode 12 is a transparent conductive film deposited on the color resist layer 11.
  • the material of the common electrode 12 is preferably indium tin oxide (Indium Tin) Oxide, ITO).
  • the color resist layer 11 including the red, green, and blue photoresists described above is only for convenience of description of the present invention and is not intended to limit the present invention. Different photoresist compositions and different arrangements from the color resist layer 11 can be implemented in the present invention.
  • the thin film transistor substrate 2 is disposed under the color filter substrate 1 and includes a lower glass substrate 20, a pixel matrix, and a transparent conductive material 22.
  • the pixel matrix is formed on the surface of the lower glass substrate 20 and includes a plurality of thin film transistor units 210, pixel electrodes 211, and metal signal lines 212.
  • Each of the thin film transistor units 210 includes a semiconductor layer 210A, a gate G, a source S, and a drain D.
  • Each of the pixel electrodes 211 corresponds to one of red, green or blue photoresists of the color photoresist layer 11 of the color filter substrate 1, and the material of the pixel electrode 211 is preferably indium tin oxide (Indium) Tin Oxide, ITO).
  • the metal signal line 212 includes a plurality of scan lines 212A and a plurality of signal lines 212B. Each of the scan lines 212A and each of the signal lines 212B are vertically staggered with each other.
  • the gate G and the source S of each of the thin film transistor units 210 are respectively connected to one of the scan lines 212A and one of the signal lines 212B, and the drain D thereof.
  • One of the pixel electrodes 211 is connected.
  • the transparent conductive material 22 is disposed on the pixel matrix and spaced apart by a second protective layer 202 and corresponding to the area covering the thin film transistor unit 210 and the metal signal line 212.
  • the transparent conductive material 22 may cover the scan wiring 212A or the signal wiring 212B or cover the scan wiring 212A and the signal wiring 212B at the same time.
  • the transparent conductive material 22 corresponds to simultaneously cover the scan wiring 212A and the signal wiring 212B.
  • the voltage difference between the transparent conductive material 22 and the common electrode 12 is smaller than the initial voltage of the liquid crystal molecules, wherein the starting voltage refers to the minimum voltage at which the liquid crystal molecules rotate.
  • the transparent conductive material 22 is preferably at the same potential as the common electrode 12. In other words, the voltage difference between the transparent conductive material 22 and the common electrode 12 is zero.
  • the second protective layer 202 between the transparent conductive material 22 and the pixel matrix is used to prevent the pixel electrode 211 or the metal signal line 212 from making electrical contact with the transparent conductive material 22.
  • the material of the transparent conductive material 22 is preferably indium tin oxide (Indium Tin Oxide, ITO).
  • the liquid crystal layer 3 is interposed between the thin film transistor substrate 2 and the color filter substrate 1, and includes a liquid crystal material.
  • the liquid crystal material of the liquid crystal layer 3 Since the voltage difference between the transparent conductive material 22 and the common electrode 12 is smaller than the starting voltage of the liquid crystal molecules, the liquid crystal material of the liquid crystal layer 3 will not rotate between the transparent conductive material 22 and the common electrode 12 because it is driven by a sufficient voltage.
  • the liquid crystal material of the liquid crystal layer 3 can maintain a vertical state to block light from passing through the region of the thin film transistor unit 210 and the metal signal line 212. Therefore, the present invention can achieve the effect of avoiding light leakage problems without a black matrix. Therefore, the color filter substrate 1 does not have a black matrix at a position corresponding to the transparent conductive material 22.
  • FIG. 3A to FIG. 3G are flowcharts of a preferred embodiment of a method for fabricating a thin film transistor substrate of a liquid crystal display according to the present invention, which includes the following steps:
  • Scanning wiring 212A and the gate G of the thin film transistor unit 210 of FIG. 2 are simultaneously deposited on the surface of the lower glass substrate 20 by metal sputtering, exposure, development, etching, etc., as shown in FIG. 3A;
  • An insulating layer 200 is deposited on the surface of the lower glass substrate 20 and a semiconductor layer 210A of the thin film transistor unit is deposited on the insulating layer 200 corresponding to the gate G of the thin film transistor unit 210, as shown in FIG. 3B; the material of the insulating layer 200 is preferably silicon nitride ( SiNx).
  • the semiconductor layer 210A preferably comprises an undoped amorphous silicon layer (amorphous) Si layer) and a doped amorphous silicon layer;
  • the signal wiring 212B is deposited on the surface of the lower glass substrate 20 by metal sputtering, exposure, development, etching, etc., and the source S and the drain D of the thin film transistor unit 210 are simultaneously deposited corresponding to the position of the semiconductor layer 210A on the thin film transistor unit, as shown in FIG. 3C, wherein the signal wiring 212B and the scanning wiring 212A are vertically staggered with each other;
  • the material of layer 201 is preferably silicon nitride (SiNx);
  • a pixel electrode 211 is deposited on the surface of the first protective layer 201, wherein the pixel electrode 211 corresponds to the drain D of the thin film transistor unit 210, as shown in FIG. 3E; the material of the pixel electrode 211 is preferably indium tin oxide (Indium) Tin Oxide, ITO).
  • a second protective layer 202 is deposited corresponding to the thin film transistor unit, the scan wiring 212A and the signal wiring 212B, as shown in FIG. 3F; the material of the second protective layer 202 is preferably silicon nitride (SiNx);
  • a transparent conductive material 22 is deposited on the second protective layer 202 corresponding to the thin film transistor unit, the scan wiring 212A and the signal wiring 212B, as shown in FIG. 3G.
  • the material of the transparent conductive material 22 is preferably indium tin oxide (Indium Tin Oxide, ITO).
  • FIG. 4 is a partial plan view of a second embodiment of the liquid crystal display of the present invention
  • FIG. 5 is a cross-sectional view taken along line BB of FIG.
  • the liquid crystal display of the second embodiment of the present invention is similar to the first embodiment of the present invention, and generally uses the same component name and label, but the difference of the second embodiment is that the transparent conductive material is covered when covering the metal signal line 212. 22 corresponds only to the overlay signal wiring 212B.
  • the present invention is not limited thereto.
  • the transparent conductive material covers all of the metal signal lines, or the transparent conductive material covers part of the metal signal lines, which are all within the scope of the present invention.
  • the present invention mainly provides a transparent conductive material on a thin film transistor substrate over a region other than the pixel electrode, and at the same time, the voltage difference between the transparent conductive material and the common electrode of the upper color filter substrate is smaller than that of the liquid crystal.
  • the starting voltage of the molecule In this way, the liquid crystal material in the region other than the pixel electrode will not be rotated and changed by being driven by a sufficient voltage to avoid light leakage, and thus can replace the function of the black matrix. Therefore, the present invention can omit the process of the black matrix, thereby reducing the manufacturing cost.

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Description

液晶显示器、彩色滤光片基板、薄膜晶体管基板及其制法 技术领域
本发明涉及一种液晶显示器，特别是有关于一种可节省制程工艺的液晶显示器、彩色滤光片基板、薄膜晶体管基板及其制法。。
 背景技术
现有的TFT-LCD（薄膜晶体管液晶显示器, thin film transistor liquid crystal display）主要包含两片玻璃基板以及一液晶层，其中上层玻璃基板表面设有彩色滤光片（Color Filter）；而下层玻璃基板则设有薄膜晶体管与像素电极。彩色滤光片包含彩色光阻及黑色矩阵(Black Matrix)。彩色光阻的位置对应像素电极。黑色矩阵则是形成于彩色光阻之间。一般来说，黑色矩阵通常需经过涂布、曝光、显影的步骤以形成于上层玻璃基板的表面。
前述的黑色矩阵在现有的TFT-LCD的彩色滤光片中是不可或缺的。对于垂直配向(vertical alignment)型的TFT-LCD而言，液晶在无电场控制的情况下呈垂直状态而挡住光线，故整体画面此时是呈现全黑，且无漏光情况。但在像素电极受到电压驱动的情况下，连接像素电极的金属线路会因为传递电压信号而改变其上的液晶角度，进而产生漏光问题。因此黑色矩阵即是用以对应遮蔽像素电极周围的金属线路以避免漏光的问题。
因此，无可避免地，现阶段的TFT-LCD制作过程均必须经过一道黑色矩阵的制作流程。TFT-LCD制作过程如能在达到防止漏光问题的目的下，省略黑色矩阵的制作流程，将可节省制作成本以及提高生产效率。
故，有必要提供一种液晶显示器、彩色滤光片基板、薄膜晶体管基板及其制法，以解决现有技术所存在的问题
 技术问题
本发明的目地在于提供一种液晶显示器、彩色滤光片基板、薄膜晶体管基板及其制法，以省略黑色矩阵的制作。
 技术解决方案
为达成本发明的前述目的，本发明提供一种液晶显示器，包含：彩色滤光片基板，包含共通电极；薄膜晶体管基板，位于所述彩色滤光片基板下方，并包含像素矩阵及透明导电材料，其中所述像素矩阵包含多个薄膜晶体管单元、像素电极及金属信号线；所述透明导电材料设置于所述像素矩阵上并以保护层间隔开，并对应覆盖所述薄膜晶体管单元与所述金属信号线的区域，且所述透明导电材料与所述共通电极之间的电压差小于液晶分子的起始电压；以及液晶层，夹设于所述薄膜晶体管基板与所述彩色滤光片基板之间。
在本发明的一实施例中，所述薄膜晶体管基板包含一下玻璃基板，其中所述像素矩阵是形成于所述下玻璃基板表面上；及所述彩色滤光片基板包含一上玻璃基板及一彩色光阻层，其中所述彩色光阻层形成于所述上玻璃基板表面，所述共通电极设于所述彩色光阻层上。
在本发明的一实施例中，所述金属信号线包含多个扫描布线与多个信号布线，每一所述扫描布线与每一所述信号布线彼此垂直交错；每一所述薄膜晶体管单元的栅极与源极分别连接其中一所述扫描布线与其中一信号布线，其漏极则连接其中一所述像素电极。
在本发明的一实施例中，所述透明导电材料对应覆盖所述扫描布线或所述信号布线或同时覆盖所述扫描布线与信号布线。
在本发明的一实施例中，所述透明导电材料与所述共通电极处于相同电位。
本发明另提供一种薄膜晶体管基板，所述薄膜晶体管基板供配置于一不具备黑色矩阵的彩色滤光片基板的下方，并包含一下玻璃基板、一像素矩阵及一透明导电材料，所述像素矩阵形成于所述下玻璃基板表面上并包含多个薄膜晶体管单元、像素电极及金属信号线；所述透明导电材料设置于所述像素矩阵上并以保护层间隔开，并对应覆盖所述薄膜晶体管单元与所述金属信号线的区域，且所述透明导电材料与所述彩色滤光片基板的一共通电极之间的电压差小于液晶分子的起始电压。
在本发明的一实施例中，所述金属信号线包含多个扫描布线与多个信号布线，每一所述扫描布线与每一所述信号布线彼此垂直交错；每一所述薄膜晶体管单元的栅极与源极分别连接其中一所述扫描布线与其中一信号布线，其漏极则连接其中一所述像素电极。
在本发明的一实施例中，所述透明导电材料对应覆盖所述扫描布线或所述信号布线或同时覆盖所述扫描布线与信号布线。
在本发明的一实施例中，所述透明导电材料与所述共通电极处于相同电位。
在本发明的一实施例中，每一所述像素电极对应所述彩色滤光片基板的彩色光阻层的其中一红、绿或蓝色光阻。
本发明另提供一种彩色滤光片基板，供配置于前述的薄膜晶体管基板的上方，并包含一上玻璃基板、一彩色光阻层及一共通电极，所述彩色光阻层形成于所述上玻璃基板的表面，由红、绿、蓝色光阻所构成，其中，所述彩色滤光片基板在与透明导电材料相对应的位置上不具有黑色矩阵；所述共通电极形成于所述彩色光阻层上。
本发明另提供一种薄膜晶体管基板制作方法，包含下列步骤：提供一下玻璃基板；于下玻璃基板表面同时形成扫描布线及薄膜晶体管单元的栅极；于下玻璃基板表面形成绝缘层并对应薄膜晶体管单元的栅极在绝缘层上形成薄膜晶体管单元的半导体层；于上玻璃基板表面形成信号布线并对应薄膜晶体管单元上的半导体层位置同时形成薄膜晶体管单元的源极与漏极，其中信号布线与扫描布线彼此垂直交错；于绝缘层以及薄膜晶体管单元上形成第一保护层，并蚀刻对应于薄膜晶体管单元的漏极上方的第一保护层，使薄膜晶体管单元的漏极裸露；于第一保护层表面形成像素电极，其中像素电极对应接触薄膜晶体管单元的漏极；对应薄膜晶体管单元、扫描布线与信号布线形成第二保护层；以及对应薄膜晶体管单元、扫描布线与信号布线而于第二保护层上形成透明导电材料。
在本发明的一实施例中，所述半导体层包含一未掺杂质非晶硅层与一掺杂质非晶硅层。
在本发明的一实施例中，所述像素电极与所述透明导电材料的材料为铟锡氧化物。
在本发明的一实施例中，所述绝缘层、第一保护层与第二保护层的材料为氮化硅。
本发明主要是通过在非像素电极区域上方覆盖透明导电材料，并使其与彩色滤光片上的共通电极处于相同电位，以避免两者之间液晶转动而产生漏光，故可取代黑色矩阵的功能，进而省略黑色矩阵的制作。
 有益效果
本发明主要是通过在非像素电极区域上方覆盖透明导电材料，并使其与彩色滤光片上的共通电极处于相同电位，以避免两者之间液晶转动而产生漏光，故可取代黑色矩阵的功能，进而省略黑色矩阵的制作。
 附图说明
图1是本发明的液晶显示器第一实施例的局部平面图。
图2是沿着图1所示的AA切线方向的截面图。
图3A~3G是本发明的液晶显示器的薄膜晶体管基板制作方法的较佳实施例的流程图。
图4是本发明的液晶显示器第二实施例的局部平面图。
图5是沿着图4所示的BB切线方向的截面图。
 本发明的最佳实施方式
为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下。再者，本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请一并参考图1及图2所示，图1是本发明的液晶显示器第一实施例的局部平面图，图2是沿图1所示的AA切线方向的截面图。
液晶显示器包含一彩色滤光片基板1、一薄膜晶体管基板2及一液晶层3。
彩色滤光片基板1包含一上玻璃基板10、一彩色光阻层11及一共通电极12(Common Electrode)。彩色光阻层11设置于上玻璃基板10的表面，包含排列整齐的红、绿、蓝色光阻，其中红、绿、蓝色光阻是通过涂布、曝光、显影等步骤而沉积于所述上玻璃基板10的表面。需要注意的是，本实施例中，彩色滤光片基板1不包含黑色矩阵(Black Matrix)。共通电极12是一透明导电薄膜，沉积于彩色光阻层11上。共通电极12的材料优选是铟锡氧化物(Indium Tin Oxide，ITO)。以上所述包含红、绿、蓝色光阻的彩色光阻层11仅为方便说明本发明，并非对本发明的限制。与彩色光阻层11不同的光阻组成形式及不同的排列方式均可实施于本发明中。
薄膜晶体管基板2配置于彩色滤光片基板1下方，并包含一下玻璃基板20、一像素矩阵及一透明导电材料22。像素矩阵是形成于下玻璃基板20表面上，并包含多个薄膜晶体管单元210、像素电极211及金属信号线212。每一薄膜晶体管单元210包含半导体层210A、栅极G、源极S及漏极D。每一像素电极211对应彩色滤光片基板1的彩色光阻层11的其中一红、绿或蓝色光阻，且像素电极211的材料优选是铟锡氧化物(Indium Tin Oxide，ITO)。金属信号线212包含多个扫描布线212A与多个信号布线212B。每一扫描布线212A与每一信号布线212B彼此垂直交错，其中每一薄膜晶体管单元210的栅极G与源极S分别对应连接其中一扫描布线212A与其中一信号布线212B，其漏极D则连接其中一像素电极211。透明导电材料22设置于像素矩阵上并以一第二保护层202间隔开，并对应覆盖薄膜晶体管单元210与金属信号线212的区域。于覆盖所述金属信号线212时，透明导电材料22可对应覆盖扫描布线212A或信号布线212B或同时覆盖扫描布线212A与信号布线212B。在本实施例中，透明导电材料22是对应同时覆盖扫描布线212A与信号布线212B。再者，透明导电材料22与共通电极12之间的电压差小于液晶分子的起始电压，其中起始电压是指液晶分子转动时的最小电压。本实施例中，透明导电材料22较佳是与共通电极12处于相同电位。换言之，透明导电材料22与共通电极12之间的电压差为零。本实施例中，透明导电材料22与像素矩阵之间的第二保护层202用以避免像素电极211或金属信号线212与透明导电材料22构成电性接触。再者，透明导电材料22的材料优选是铟锡氧化物(Indium Tin Oxide，ITO)。
液晶层3夹设于薄膜晶体管基板2与彩色滤光片基板1之间，包含液晶材料。
由于透明导电材料22与共通电极12之间的电压差小于液晶分子的起始电压，液晶层3的液晶材料在透明导电材料22与共通电极12之间将不会因为受到足够电压驱动而转动。液晶层3的液晶材料可保持垂直状态而阻挡光线从薄膜晶体管单元210与金属信号线212的区域穿过。因此，本发明可在无黑色矩阵的情况下仍可达到避免漏光问题的功效。也因此，所述彩色滤光片基板1在与透明导电材料22相对应的位置上不具有黑色矩阵。
请进一步参考图3A~3G所示，图3A~3G是本发明液晶显示器的薄膜晶体管基板制作方法的较佳实施例的流程图，包含下列步骤：
提供一下玻璃基板20；
在下玻璃基板20表面通过金属溅镀、曝光、显影、蚀刻等步骤同时沉积扫描布线212A及前述图2的薄膜晶体管单元210的栅极G，如图3A所示；
在下玻璃基板20表面沉积绝缘层200并对应薄膜晶体管单元210的栅极G在绝缘层200上沉积薄膜晶体管单元的半导体层210A，如图3B所示；绝缘层200的材料优选是氮化硅(SiNx)。半导体层210A优选是包含一未掺杂质非晶硅层(amorphous Si layer)与一掺杂质非晶硅层；
在下玻璃基板20表面通过金属溅镀、曝光、显影、蚀刻等步骤沉积信号布线212B，并对应薄膜晶体管单元上的半导体层210A位置同时沉积薄膜晶体管单元210的源极S与漏极D，如图3C所示，其中信号布线212B与扫描布线212A彼此垂直交错；
在绝缘层200以及薄膜晶体管单元上沉积第一保护层201，并蚀刻对应于薄膜晶体管单元的漏极D上方的第一保护层201，使漏极D裸露，如图3D所示；第一保护层201的材料优选是氮化硅(SiNx)；
在第一保护层201表面沉积像素电极211，其中像素电极211对应接触薄膜晶体管单元210的漏极D，如图3E所示；像素电极211的材料优选为铟锡氧化物(Indium Tin Oxide, ITO)。
对应薄膜晶体管单元、扫描布线212A与信号布线212B沉积第二保护层202，如图3F所示；第二保护层202的材料优选是氮化硅(SiNx)；以及
对应薄膜晶体管单元、扫描布线212A与信号布线212B而于第二保护层202上沉积透明导电材料22，如图3G所示。透明导电材料22的材料优选为铟锡氧化物(Indium Tin Oxide, ITO)。
请一并参考图4及图5所示，图4是本发明的液晶显示器的第二实施例的局部平面图，图5是沿着图4的BB切线方向的截面图。本发明第二实施例的液晶显示器相似于本发明第一实施例，并大致沿用相同组件名称及标号，但第二实施例的差异特征在于：在覆盖所述金属信号线212时，透明导电材料22仅对应覆盖信号布线212B。但本发明并不局限于此，在本发明揭示的实施方案中，透明导电材料覆盖全部金属信号线，或者透明导电材料覆盖部分金属讯号线均应属于本发明的范畴。
综上所述，本发明主要是在薄膜晶体管基板上，像素电极之外的区域上方设置透明导电材料，并同时使透明导电材料与上方彩色滤光片基板的共通电极之间的电压差小于液晶分子的起始电压。如此一来，像素电极之外的区域的液晶材料将不会因为受到足够电压驱动而转动改变排列，避免漏光情况发生，进而可取代黑色矩阵的功能。因此，本发明可省略黑色矩阵的制程，进而降低制造成本。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
 本发明的实施方式
工业实用性
序列表自由内容

Claims (15)

  1. 一种液晶显示器，其特征在于：包含：
    彩色滤光片基板，包含一上玻璃基板、一彩色光阻层及共通电极，其中所述彩色光阻层形成于所述上玻璃基板表面，所述共通电极设于所述彩色光阻层上；
    薄膜晶体管基板，位于所述彩色滤光片基板下方，并包含一下玻璃基板、像素矩阵及透明导电材料，其中所述像素矩阵是形成于所述下玻璃基板表面上并包含多个薄膜晶体管单元、像素电极及金属信号线；所述透明导电材料设置于所述像素矩阵上并以保护层间隔开，并对应覆盖所述薄膜晶体管单元与所述金属信号线的区域，且所述透明导电材料与所述共通电极处于相同电位；以及
    液晶层，夹设于所述薄膜晶体管基板与所述彩色滤光片基板之间。
  2. 一种液晶显示器，其特征在于：包含：
    彩色滤光片基板，包含共通电极；
    薄膜晶体管基板，位于所述彩色滤光片基板下方，并包含像素矩阵及透明导电材料，其中所述像素矩阵包含多个薄膜晶体管单元、像素电极及金属信号线；所述透明导电材料设置于所述像素矩阵上并以保护层间隔开，并对应覆盖所述薄膜晶体管单元与所述金属信号线的区域，且所述透明导电材料与所述共通电极之间的电压差小于液晶分子的起始电压；以及
    液晶层，夹设于所述薄膜晶体管基板与所述彩色滤光片基板之间。
  3. 如权利要求2所述的液晶显示器，其特征在于：
    所述薄膜晶体管基板包含一下玻璃基板，其中所述像素矩阵是形成于所述下玻璃基板表面上；及
    所述彩色滤光片基板包含一上玻璃基板及一彩色光阻层，其中所述彩色光阻层形成于所述上玻璃基板表面，所述共通电极设于所述彩色光阻层上。
  4. 如权利要求3所述的液晶显示器，其特征在于：所述金属信号线包含多个扫描布线与多个信号布线，每一所述扫描布线与每一所述信号布线彼此垂直交错；每一所述薄膜晶体管单元的栅极与源极分别连接其中一所述扫描布线与其中一信号布线，其漏极则连接其中一像素电极。
  5. 如权利要求4所述的液晶显示器，其特征在于：所述透明导电材料对应覆盖所述扫描布线或所述信号布线或同时覆盖所述扫描布线与信号布线。
  6. 如权利要求2所述的液晶显示器，其特征在于：所述透明导电材料与所述共通电极处于相同电位。
  7. 一种薄膜晶体管基板，其特征在于：所述薄膜晶体管基板供配置于一彩色滤光片基板的下方，并包含一下玻璃基板、一像素矩阵及一透明导电材料，所述像素矩阵形成于所述下玻璃基板表面上并包含多个薄膜晶体管单元、像素电极及金属信号线；所述透明导电材料设置于所述像素矩阵上并以保护层间隔开，并对应覆盖所述薄膜晶体管单元与所述金属信号线的区域，且所述透明导电材料与所述彩色滤光片基板的一共通电极之间的电压差小于液晶分子的起始电压。
  8. 如权利要求7所述的薄膜晶体管基板，其特征在于：所述金属信号线包含多个扫描布线与多个信号布线，每一所述扫描布线与每一所述信号布线彼此垂直交错；每一所述薄膜晶体管单元的栅极与源极分别连接其中一所述扫描布线与其中一信号布线，其漏极则连接其中一像素电极。
  9. 如权利要求8所述的薄膜晶体管基板，其特征在于：所述透明导电材料对应覆盖所述扫描布线或所述信号布线或同时覆盖所述扫描布线与信号布线。
  10. 如权利要求7所述的薄膜晶体管基板，其特征在于：所述透明导电材料与所述共通电极处于相同电位。
  11. 如权利要求7所述的薄膜晶体管基板，其特征在于：每一所述像素电极对应所述彩色滤光片基板的彩色光阻层的其中一红、绿或蓝色光阻。
  12. 一种彩色滤光片基板，其特征在于：所述彩色滤光片基板供配置于一如权利要求7所述的薄膜晶体管基板的上方，并包含一上玻璃基板、一彩色光阻层及一共通电极，所述彩色光阻层形成于所述上玻璃基板的表面，由红、绿、蓝色光阻所构成，其中，所述彩色滤光片基板在与透明导电材料相对应的位置上不具有黑色矩阵；所述共通电极形成于所述彩色光阻层上。
  13. 一种薄膜晶体管基板制作方法，其特征在于：所述薄膜晶体管基板制作方法包含：
    提供一下玻璃基板；
    在下玻璃基板表面同时形成扫描布线及薄膜晶体管单元的栅极；
    在下玻璃基板表面形成绝缘层并对应薄膜晶体管单元的栅极在绝缘层上形成薄膜晶体管单元的半导体层；
    在上玻璃基板表面形成信号布线并对应薄膜晶体管单元上的半导体层位置同时形成薄膜晶体管单元的源极与漏极，其中信号布线与扫描布线彼此垂直交错；
    在绝缘层以及薄膜晶体管单元上形成第一保护层，并蚀刻对应于薄膜晶体管单元的漏极上方的第一保护层，使薄膜晶体管单元的漏极裸露；
    在第一保护层表面形成像素电极，其中像素电极对应接触薄膜晶体管单元的漏极；
    对应薄膜晶体管单元、扫描布线与信号布线形成第二保护层；以及
    对应薄膜晶体管单元、扫描布线与信号布线而于第二保护层上形成透明导电材料。
  14. 如权利要求13所述的薄膜晶体管基板制作方法，其特征在于：所述像素电极与所述透明导电材料的材料为铟锡氧化物。
  15. 如权利要求13所述的薄膜晶体管基板制作方法，其特征在于：所述绝缘层、第一保护层与第二保护层的材料为氮化硅。
PCT/CN2011/077768 2011-05-09 2011-07-29 液晶显示器、彩色滤光片基板、薄膜晶体管基板及其制法 Ceased WO2012151792A1 (zh)

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