WO2012150529A1 - Élément photovoltaïque à la stabilité à long terme accrue - Google Patents

Élément photovoltaïque à la stabilité à long terme accrue Download PDF

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WO2012150529A1
WO2012150529A1 PCT/IB2012/052074 IB2012052074W WO2012150529A1 WO 2012150529 A1 WO2012150529 A1 WO 2012150529A1 IB 2012052074 W IB2012052074 W IB 2012052074W WO 2012150529 A1 WO2012150529 A1 WO 2012150529A1
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photovoltaic element
longpass filter
absorption
wavelength
organic
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PCT/IB2012/052074
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English (en)
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Ingmar Bruder
Rüdiger Sens
Markus Grob
Ursula SCHULZE TILLING
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Basf Se
Basf (China) Company Limited
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Priority to EP12779520.1A priority Critical patent/EP2705539A4/fr
Priority to CN201280032856.6A priority patent/CN103636022A/zh
Priority to JP2014508899A priority patent/JP2014520386A/ja
Priority to AU2012251447A priority patent/AU2012251447A1/en
Priority to KR1020137031886A priority patent/KR20140041513A/ko
Publication of WO2012150529A1 publication Critical patent/WO2012150529A1/fr
Priority to ZA2013/09204A priority patent/ZA201309204B/en

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    • H01L31/02—Details
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    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K85/649—Aromatic compounds comprising a hetero atom
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    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to a photovoltaic element for conversion of electromagnetic radiation to electrical energy, to a process for production of a photovoltaic element for conversion of electromagnetic radiation to electrical energy and to a process for selection of a longpass filter for use in a photovoltaic element for conversion of electromagnetic radiation to electrical energy.
  • Such photovoltaic elements and processes are used to convert electromagnetic radiation, especially sunlight, to electrical energy. More particularly, the invention can be applied to dye solar ceils.
  • the direct conversion of solar energy to electrical energy in solar cells is based generally on what is called the "internal photoeffect" of a semiconductor material, i.e. the production of electron-hole pairs by absorption of photons and the separation of the negative and positive charge carriers at a p-n junction or a Schottky contact.
  • a photovoltage is generated, which, in an external circuit, can cause a photocurrent through which the solar cell releases its power.
  • the semiconductor can generally only absorb those photons which have an energy greater than the bandgap thereof. The size of the semiconductor bandgap thus generally determines the proportion of sunlight which can be converted to electrical energy.
  • organic solar cells i.e. solar cells which comprise at least one organic semiconductor material, or solar cells which, instead of solid inorganic semiconductors, comprise other materials, especially organic dyes or even liquid electrolytes and semiconductors.
  • DSC dye solar cell
  • Dye solar cells of which there are now several variants, generally have two electrodes, at least one of which is transparent. According to their function, the two electrodes are referred to as “working electrode” (also “anode”, generation of electrons) and “counterelectrode” (also
  • an n-conductive metal oxide On the working electrode or in the vicinity thereof, an n-conductive metal oxide has generally been applied, especially as a porous, for example nanoporous, layer, for example a nanoporous titanium dioxide (Ti0 2 ) layer of thickness approx. 10-20 ⁇ . Between the layer of the n-conductive metal oxide and the working electrode, it is additionally possible for at least one blocking layer to be provided, for example an impervious layer of a metal oxide, for example ⁇ 2.
  • the n-conductive metal oxide generally has an added light-sensitive dye.
  • a monolayer of a light-sensitive dye for example a ruthenium complex
  • a catalytic layer of a few ⁇ in thickness, for example platinum.
  • the area between the two electrodes in the conventional dye solar cell is generally filled with a redox electrolyte, for example a solution of iodine (I2) and/or potassium iodide (Kl).
  • the function of the dye solar cell is based on absorption of light by the dye. From the excited dye, electrons are transferred to the n-semiconductive metal oxide semiconductor and migrate thereon to the anode, whereas the electrolyte ensures charge balance via the cathode.
  • the n- semiconductive metal oxide, the dye and the electrolyte are thus the essential constituents of the dye solar cell.
  • the dye solar cell produced with liquid electrolyte in many cases suffers from nonoptimal sealing, which can lead to stability problems.
  • the liquid redox electrolyte can especially be replaced by a solid p-semiconductor.
  • Such solid dye solar cells are also referred to as sDSCs (solid DSCs).
  • the efficiency of the solid variant of the dye solar cell is currently approx. 4.6 - 4.7% (Snaith, H., Angew. Chem. Int. Ed., 2005, 44, 6413-6417).
  • inorganic p-semiconductors such as Cul, CuBr ⁇ 3(S(C4H 9 ) 2 ) or CuSCN have been used to date in solid dye solar cells in place of the redox electrolyte. It is also possible, for example, to apply findings from photosynthesis. In nature too, it is the Cu(l) enzyme plastocyanine which, in photosystem I, reduces the oxidized chlorophyll dimer again.
  • Such p-semiconductors can be processed by means of at least three different methods, namely: from a solution, by
  • Organic polymers have also already been used as solid p-semiconductors. Examples thereof include polypyrrole, poly(3,4-ethylenedioxythiophene), carbazole-based polymers, polyaniline, poly(4-undecyl-2,2'-bithlophene), poly(3-octylthiophene), poly(triphenyldiamine) and poly(N- vinylcarbazole). In the case of poly(N-vinyicarbazoie), the efficiencies extend up to 2%. PEDOT (poiy(3,4-ethylenedioxythiophene) polymerized in situ also showed an efficiency of 0.53%. The polymers described here are typically not used in pure form, but rather with additives.
  • Inorganic-organic mixed systems have also already been used in place of the redox electrolyte in dye solar cells.
  • Cul was used together with PEDOT:PSS as a hole conductor in sDSC (Zhang J. Photochem: Photobio., 2007, 189, 329).
  • low molecular weight organic p-semiconductors i.e. nonpo!ymerized, for example monomeric or else oligomeric, organic p-semiconductors.
  • the first use of a low molecular weight p-semiconductor in solid dye solar cells replaced the liquid electrolyte with a vapor-deposited layer of triphenylamine (TPD).
  • TPD triphenylamine
  • the use of the organic compound 2, 2', 7,7'- tetrakisfN.N-di-p-methoxyphenylamineJ-g ⁇ '-spirobiffuorene (spiro-MeOTAD) in dye solar cells was reported in 1998.
  • tert-butylpyridine as a solid p-semiconductor increased the efficiency to 2.56%, with an open-circuit voltage (V oc ) of approx. 910 mV and a short-circuit current Isc of approx. 5 mA at an active area of approx. 1.07 cm 2 (see Kruger et al., App!. Phys. Lett., 2001 , 79, 2085). Dyes which achieved better coverage of the T1O2 layer and which have good wetting on spiro-MeOTAD show efficiencies of more than 4%. Even better efficiencies (approx. 4.6%) were reported when the ruthenium complex was equipped with oxyethylene side chains.
  • the photocurrent is directly dependent on the yield at the hole transition from the oxidized dye to the solid p-conductor. This depends on two factors: firstly on the degree of penetration of the p- semiconductor into the oxide pores, and secondly on the thermodynamic driving force for the charge transfer (i.e. especially the difference in the free enthalpy AG between dye and p- conductor).
  • One disadvantage of the dye solar cell is that the proportion of iight which can be used by the dye is generally limited by the energetic distance between the Fermi energies of the n- and p- conductors used. The photovoltage is generally also limited by this distance.
  • dye solar cells generally have to be comparatively thin due to the charge transport required (for example 1-2.5 micrometers), and so the exploitation of the incident Iight is generally not optimal.
  • a further known technical challenge associated with dye solar cells is that of the long-term stability thereof. Particularly for use in durable products and articles such as motor vehicles or buildings, for example, stability of at least several months, more particularly several years, is required even under adverse ambient conditions.
  • dye solar cells known from the prior art in many cases have an efficiency which declines significantly with time. More particularly, this effect can be observed on prolonged illumination of the dye solar cells, which leads to the conclusion that photophysical and chemical processes contribute to degradation of the components. There are thus conflicting aims, since illumination of the dye solar cells is required on the one hand for generation of electrical energy, but, at the same time, specifically this illumination contributes to degradation of the dye solar cells.
  • a photovoltaic element is generally understood to mean any element which is capable of such a conversion.
  • the photovoltaic element may especially be configured fully or partly as a solar cell and/or as a photodiode.
  • Particular preference is given in the context of the present invention to configurations of the photovoltaic element in the form of organic solar ceils, i.e. in the form of solar cells which comprise at least one organic material, preferably at least one organic layer, for example at least one organic dye and/or at least one organic conductor material, for example an organic hole conductor material.
  • the photovoltaic element may be configured especially as an organic solar cell and especially as a dye solar cell, especially as a dye solar cell with solid hole conductor material, also referred to hereinafter as SDSC.
  • the electromagnetic radiation may especially be light in the ultraviolet and/or visible and/or infrared spectral region, preferably sunlight.
  • the photovoltaic element comprises the elements listed hereinafter. Preferably, but not necessarily, these elements are provided in the sequence mentioned. These elements may especially be present in a layer structure.
  • the photovoltaic element comprises a first electrode and at least one n-semiconductive metal oxide.
  • the photovoltaic element comprises at least one dye for absorption of at least a portion of the electromagnetic radiation. This dye preferably has an absorption in a visible spectral region of the
  • the photovoltaic element comprises at least one organic hole conductor material and at least one second electrode.
  • These elements may be applied, for example, in the sequence mentioned or else, for example, in reverse sequence to a substrate which may, for example, likewise be part of the photovoltaic element.
  • This substrate may preferably be transparent, although it is also possible in principle to use nontransparent substrates.
  • the substrate may, for example, comprise a glass substrate and/or a polymer substrate and may have a single-layer or else multilayer structure. More particularly, it is also possible to use multilayer substrates, for example laminated substrates.
  • the organic hole conductor material in the photovoltaic element has an absorption spectrum for the electromagnetic radiation having at least one absorption maximum in an ultraviolet or blue spectral region. This may be a local or else a global maximum.
  • light refers hereinafter to electromagnetic radiation with wavelengths between 100 nm and 1 cm. Visible light or light in the visible spectral region refers to light with a wavelength of 390 to 790 nm.
  • the ultraviolet spectral region refers hereinafter to a spectral region between 100 nm and 390 nm.
  • the infrared spectral region refers to a spectral region between 790 nm and 1 cm.
  • the blue spectral region refers hereinafter to the spectral region between 390 and 480 nm.
  • the absorption spectrum of the organic hole conductor material then has, i.e. toward higher wavelengths proceeding from the absorption maximum, an absorption edge declining with the wavelength of the electromagnetic radiation arid having a characteristic wavelength A H TL-
  • This characteristic wavelength AHTL is defined such that the organic hole conductor material at this wavelength AHTL in the photovoltaic element has a decadic absorbance of 0.3.
  • the decadic absorbance also called decadic extinction, generally refers in the context of the present invention to the absorbance of the organic hole conductor material within the photovoltaic element based on the decadic system, which can be measured by means of an Ulbricht sphere in diffuse reflection on the photovoltaic element without the dye (see below).
  • the reflector used may be the respective counterelectrode, for example silver or gold.
  • the reference used may be a reference cell without dye and without hole conductor.
  • the absorbance E of the organic hole conductor material also referred to as extinction or extinction of light, is determined from an absorption A of the organic hole conductor material in the photovoltaic element according to the formula:
  • the absorbance of the hole conductor material in the photovoltaic element can thus be determined first by obtaining a layer structure including a substrate, the first electrode, the n-semiconductive metal oxide, the organic hole conductor material and the second electrode, i.e. without the dye, which is irradiated in an Ulbricht sphere with light of intensity l 0 , where the intensity is i due to the absorption of the organic hole conductor material after passage through the photovoltaic element, where the absorption A is calculated as the quotient
  • the reference value determined may be a corresponding absorption for a reference cell having neither dye nor the organic hole conductor material.
  • the absorption A Ret determined in this reference measurement can be subtracted from the total absorption determined beforehand in order to determine the absorption of the organic hole conductor material. From this absorption of the organic hole conductor material in the photovoltaic element, it is then in turn possible to use the formula described above to determine the absorbance of the organic hole conductor material in the photovoltaic element.
  • the decadic absorbance is by definition exactly 0.3, from which an absorption at this characteristic wavelength of 0.5 is calculated.
  • the photovoltaic element additionally has at least one longpass filter.
  • a longpass filter is generally understood to mean an optical element which has a high absorption in a low wavelength range and a low absorption in a higher wavelength range, for example a high absorption in a blue and/or ultraviolet spectral region and a lower absorption in a green, red or infrared spectral region. More particularly, the longpass filter may be configured as an edge filter and/or comprise an edge filter.
  • the longpass filter has a transmission edge rising with the wavelength of the electromagnetic radiation and having a characteristic wavelength ALP. This characteristic wavelength ALP is defined such that a transmission T of the longpass filter at ALP is 50% of the maximum transmission of the longpass filter.
  • the transmission is defined as a quotient of an intensity of electromagnetic radiation transmitted by the. filter, divided by the starting intensity of electromagnetic radiation incident on the filter, multiplied by 100%.
  • This characteristic wavelength A L p is typically a characteristic wavelength in an absorption edge of the longpass filter.
  • a further provision is configuration of the photovoltaic element such that ALP is within a spectral range from AHTL - 30 nm to AHTL + 30 nm.
  • the following relationship shall apply: AHTL - 30 nm ⁇ ALP ⁇ AHTL + 30 nm.
  • wavelength AHTL is 24 nm.
  • Said condition of matching the longpass filter to the absorption of the organic hole conductor material is based on the finding, which is still to be confirmed experimentally below, that degradation of the organic components is attributable essentially to unwanted absorption of the electromagnetic radiation by the organic hole conductor material.
  • Said condition of matching the longpass filter to the spectral properties of the organic hole conductor material can at least substantially compensate for this disadvantage.
  • the transmission of the longpass filter has fallen to 50%, based on the maximum transmission of the longpass filter.
  • the longpass filter preferably has a maximum transmission which is at least 75%, especially at least 80%, preferably at least 85% or even at least 90% or at least 95%.
  • the wavelength ALP is specified in many cases by the manufacturers and suppliers of the longpass filters, particularly of the edge filters. Particular preference is given to using, in the context of the present invention and in the context of the present photovoltaic elements, one or more organic hole conductor materials which have an absorption edge at low wavelengths, preferably in the blue spectral region.
  • the form of absorption spectrum of the organic hole conductor material may especially be such that, at a wavelength AHTL + 30 nm in the photovoltaic element, it has declined to a decadic absorbance of less than 0.2, preferably to less than 0.1 and more preferably to less than 0.05, More particularly, the organic hole conductor material in the photovoltaic element, for wavelengths of AHTL + 30 nm to 800 nm, may have a decadic absorbance of less than 0.2, preferably of less than 0.1 and more preferably of less than 0.05.
  • the longpass filter has a steep absorption edge in order that a maximum number of photons can be absorbed on the short-wave side of ALP and a maximum number of photons can be transmitted on the long-wave side of ALP.
  • the steepness of the longpass filter is typically reported in the unit of electron volts (eV) and is defined typically as:
  • ALp,biock here is that wavelength at which the optical density of the longpass filter attains the value of 2.
  • ALP.biock is that wavelength at which the optical density goes below the value of 2 with rising wavelength.
  • This definition is naturally meaningful only for longpass filters whose optical density in at least one wavelength range, more particularly a blocking range, attains at least the value of 2, preferably at least a value of 3 and more preferably a value of at least 4, and so particular preference is given to such longpass filters in the context of the present invention.
  • the optical density is another way of expressing the above-defined absorbance.
  • the longpass filter should preferably have an optical density of ⁇ 2, particularly an optical density of ⁇ 3, and at wavelengths ⁇ ALP.biock an optical density of ⁇ 2.
  • ALP.trans is defined as that wavelength at which the transmission T attains a value of 95% of the maximum transmission of the longpass filter.
  • the transmission should thus be ⁇ 95% of the maximum transmission of the longpass filter, and at wavelengths greater than ALP,trans ⁇ 95% of the maximum transmission of the longpass filter, for example 95% to 100% of the maximum transmission of the longpass filter.
  • the longpass filter more particularly in a transmission region, has a maximum transmission of 85%
  • the parameter h denotes Planck's constant (h ⁇ 6.626 ⁇ 10 "34 Js) and c the speed of light in a vacuum (c ⁇ 3.0 ⁇ 10 8 m/s).
  • the steepness SLP ⁇ 1 .2 eV preferably SLP ⁇ 1.0 eV and more preferably SLP ⁇ 0.8 eV.
  • the photovoltaic element may especially have a transparent substrate.
  • a transparent substrate can be used in combination with a transparent first electrode which has been applied directly or indirectly to the transparent substrate.
  • the photovoltaic element may more preferabiy be configured such that the electromagnetic radiation can enter the photovoltaic element, particularly the above-described layer structure, through the substrate.
  • a transparent substrate is understood to mean a substrate which, in the
  • the abovementioned visible spectral region has a transmission of at least 50%, preferably of at least 70% and more preferabiy of at least 90%.
  • a transparent substrate it is particularly preferred when the iongpass filter has been applied to the transparent substrate.
  • the longpass filter may be configured independently of the above-described layer structure, for example by virtue of the longpass filter not being bonded directly to the substrate and the abovementioned layers.
  • the at least one longpass filter may also be applied, for example, on one or more sides of the transparent substrate, for example on a side of the substrate facing the layer structure and/or on a side of the substrate remote from the layer structure.
  • the first electrode or the second electrode may be applied on a first side of the substrate, the longpass filter having been applied on a second side of the substrate remote from the first side.
  • the longpass filter may, however, also be arranged, for example, between the substrate and the first electrode or the second electrode, for example by virtue of the longpass filter first being applied to the substrate and then the first electrode or the second electrode.
  • the iongpass filter in at least one transmission region preferably has a maximum transmission of at least 75%, especially at least 80%, at least 85%, at least 90% or even at least 95%.
  • the longpass filter preferably has, in at least one absorption region, i.e., for example, a region below the wavelength Ai_p,biock, a decadic absorbance of at least 2, preferably of at least 3 and more preferably of at least 4.
  • the longpass filter comprises at least one transparent organic matrix materia! and at least one absorber material introduced, especially mixed, into the matrix material.
  • this matrix material comprises at least one varnish, said varnish preferably being a clearcoat.
  • Such clearcoats are well known to the person skilled in the art.
  • the varnish, preferably the clearcoat is preferably selected from the group consisting of polyacrylate- polyester varnishes, polyurethane varnishes, me!amine-formaldehyde varnishes and further commercial clearcoats.
  • the varnish is preferably a polyacrylate-polyester varnish.
  • polyacrylate-polyacryiate varnish as used in the context of the present invention comprises single- and multicomponent varnishes, said varnish preferabiy consisting of at least one polyacrylate and at least one polyester.
  • the varnish typically comprises, as well as the at least one polyacrylate and the at least one polyester, copolymers, especially polyacrylate-polyester copolymers.
  • a suitable example is the varnish AF 23-0447 (BASF Coatings).
  • the varnish is preferably produced by application of a coating composition.
  • This coating composition which comprises the varnish or forms the varnish can be applied, for example, to a substrate of the photovoltaic element, for example by one or more of the operations of spin coating, printing, casting and knife coating.
  • the coating composition can be applied and cured on the substrate to form the varnish.
  • this coating composition preferably comprises at least one component (A) and a component (B), (A) being a polyester resin and (B) a polyacrylate resin.
  • Component (A) is preferably obtainable by reaction of polycarboxylic acids or the esterifiable derivatives thereof, optionally together with monocarboxylic acids, polyols and/or monools. Optionally, in this reaction, further modifying components and/or reactive components are also added.
  • polycarboxylic acids which can be used include aromatic, aliphatic and
  • cycloaliphatic polycarboxylic acids examples include phthalic acid, isophthalic acid, terephthalic acid, halophthalic acids such as tetrachloro- or tetrabromophthalic acid, adipic acid, glutaric acid, azelaic acid, sebacic acid, fumaric acid, maleic acid, trimellitic acid, pyromellitic acid, tetrahydrophthalic acid, hexahydrophthalic acid, 1 ,2-, 1,3- and 1 ,4- cyclohexanedicarboxylic acid, 4-methylhexahydrophthalic acid, endomethylenetetra- hydrophthalic acid, tricyclodecanedicarboxylic acid, endoethylenehexahydrophthalic acid, camphoric acid, cyclohexanetetracarboxylic acid, cyciobutanetetracarboxylic acid and the like, it is optionally
  • Suitable polyol components for preparation of the polyester are polyhydric alcohols such as ethylene glycol, propanediols, butanediols, hexanediols, neopentyl glycol, diethylene glycol, trimethylpentanediol, ethylbutylpropanediol, trimethylolpropane, ditrimethyiolpropane, trimethylolethane, glycerol, pentaerythritol, dipentaerythritol, trishydroxyethyl isocyanate, polyethylene glycol, polypropylene glycol, optionally together with monohydric alcohols, for example butanol, octanol, lauryl alcohol, ethoxylated or propoxylated phenols.
  • polyhydric alcohols such as ethylene glycol, propanediols, butanediols, hexanediol
  • Optional further modifying components for preparation of the polyesters include especially compounds which have at least one group reactive toward the functional groups of the polyester, for example polyisocyanates and/or diepoxide compounds, and optionally also monoisocyanates and/or monoepoxide compounds. Suitable components are described, for example, in DE-A-40 24 204 on page 4 lines 4 to 9.
  • Suitable further components are compounds which, apart from a group reactive toward the functional groups of the polyester, also have a tertiary amino group, for example
  • polyesters are prepared by the methods of esterification known to those skilled in the art (see, for example, Ullmanns Enzyklopadie der ischen Chemie, Volume 14, pages 80 to 106, 1963).
  • the polyacrylate resin is prepared by the methods known to those skilled in the art.
  • the polyacrylate resin (B) is preferably prepared partly in the presence of the polyester resin (A).
  • suitable monomers for preparation of the polyacrylate resin include the following: acrylic acid, methacrylic acid, ⁇ -carboxyethyl acrylate, and the olefinically unsaturated monomers which comprise sulpho/sulphonate groups and are described in WO-A 00/39181 (page 8 line 13-page 9 line 19), one example of which is 2-acrylamido-2- methyipropanesulphonic acid. Preference is given to using carboxy-functional monomers, more preferably acrylic acid and/or methacrylic acid.
  • Examples also include hydroxyethyl methacrylate, hydroxypropyl methacrylate, hydroxyethyl acrylate, hydroxypropyl acrylate, hydroxybutyl acrylate, hydroxybutyl methacrylate, or hydroxyl monomers comprising alkylene oxide units, for example addition products of ethylene oxide, propylene oxide or butylene oxide onto (meth)acrylic acid, (meth)acrylic acid hydroxyl esters or (meth)aliyl alcohol, and also the mono- and dia!lyl ethers of trimethylolpropane, glycerol or pentaerythritol.
  • (meth)acrylic esters for example methyl acrylate, ethyl acrylate, n-butyl acrylate, isobutyl acrylate, tert-butyl acrylate, 2-ethylhexyl acryiate, methyl methacrylate, ethyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, hexyl acrylate, lauryl acrylate, monomers comprising cyclic hydrocarbyl radicals, such as cyclohexyl
  • the coating composition preferably comprises at least one crosslinking agent (C).
  • Crosslinking agents include all substances known to those skilled in the art for this purpose.
  • the crosslinker is preferably selected from the group consisting of polyisocyanates, amide- and amine-formaldehyde resins, phenol resins, aldehyde resins and ketone resins.
  • the crosslinker is preferably a polyisocyanate.
  • the present invention also relates to a photovoltaic element as described above, wherein the varnish is applied by applying at least one coating composition, and wherein the coating composition comprises at least one polyester resin (A), at least one polyacrylate resin (B), optionally copolymers, and preferably at least one crosslinking agent, said crosslinking agent preferably being selected from the group consisting of polyisocyanates, amide- and amine-formaldehyde resins, phenol resins, aldehyde resins and ketone resins, said crosslinking agent further preferably being a polyisocyanate.
  • the coating composition comprises at least one polyester resin (A), at least one polyacrylate resin (B), optionally copolymers, and preferably at least one crosslinking agent, said crosslinking agent preferably being selected from the group consisting of polyisocyanates, amide- and amine-formaldehyde resins, phenol resins, aldehyde resins and ketone resins, said crosslinking agent further preferably
  • the at least one crosslinking agent is a polyisocyanate
  • it may comprise any organic polyisocyanates with aliphatically, cydoaliphaticaliy and/or aromatically bonded, free isocyanate groups. Preference is given to using polyisocyanates having 2 to 5 isocyanate groups per molecule.
  • small amounts of organic solvent can be added to the polyisocyanates in the coating composition, preferably, for example, up to 10% by weight based on pure polyisocyanate, in order thus to improve the incorporability of the isocyanate.
  • Solvents suitable as additives for the polyisocyanates are, for example, ethoxyethyl propionate, butyl acetate and the like.
  • Suitable examples include ethylene 1 ,2-diisocyanate, tetramethylene 1 ,4-diisocyanate, hexamethylene 1 ,6-diisocyanate, 2,2,4- or 2,4,4-trimethylhexamethylene 1 ,6-diisocyanate, dodecane 1 ,12-diisocyanate, omega.omega'-diisocyanatodipropyl ether, cyclobutane 1,3-diisocyanate, cyclohexane 1,3- and 1,4-diisocyanate, 2,2- and 2,6-diisocyanato-1-methylcyclohexane, 3-isocyanatomethyl-3,5,5- trimethylcyclohexy] isocyanate, 2,5- and 3,5-bis ⁇ isocyanatomethyl)-8-methyl-1 ,4- methanodecahydronaphthalene, 1 ,5-, 2,5-, 1,6- and 2,6-
  • polyisocyanates polyisocyanates having isocyanurate groups and/or biurethane groups and/or allophanate groups and/or urethane groups and/or urea groups.
  • Polyisocyanates having urethane groups are obtained, for example, by reacting some of the isocyanate groups with polyols, for example trimethylolpropane and glycerol.
  • hexamethylene diisocyanate dimerized and trimerized hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane 2,4'-diisocyanate or dicyclohexylmethane 4,4'- diisocyanate, or mixtures of these polyisocyanates.
  • Very particular preference is given to using mixtures of polyisocyanates which have uretdione and/or isocyanurate groups and/or aliophanate groups and are based on hexamethylene diisocyanate, as formed through catalytic oligomerization of hexamethylene diisocyanate using suitable catalysts.
  • the polyisocyanate component (C) may otherwise also consist of any desired mixtures of the polyisocyanates mentioned by way of example.
  • Examples include the following commercially available crosslinking agents: SC29-0035, SC29- 0031 , SC29-0034 (BASF Coatings).
  • the coating composition may further comprise at least one diluent.
  • diluent as used in the context of the present invention comprises solvents and solvent mixtures which are selected according to the drying requirements on the varnish.
  • the solvents used here are especially organic solvents selected from the group consisting of solvents comprising acetate groups, aromatic solvents and gasoline. Examples include the following commercially available diluents: SV42-0150, SV41-0391, SV41-0316 (BASF Coatings).
  • the matrix material preferably the above- described varnish, comprises at least one organic absorber material, for example 1 , 2, 3, 4 or 5 organic absorber materials.
  • absorber material as used in the context of the present invention is understood to mean UV stabilizers, i.e. chemical compounds which are introduced into the matrix material as additives as protection against ageing of the matrix material by UV radiation.
  • This absorber material is preferably an organic absorber material, further preferably an organic absorber material selected from compounds comprising a benzotriazole group or a triazine group.
  • the longpass filter comprises at least two different absorber materials introduced, especially mixed, into the matrix material.
  • the longpass filter comprises at least two different absorber materials
  • at least one of these absorber materials is a compound which comprises a triazine group.
  • the scope of the invention comprises, for example, embodiments in which one of the absorber materials is a compound comprising triazine groups and the at least one second absorber material is likewise a compound comprising triazine groups different than the first absorber material.
  • the term "different" in this case means that the two organic compounds differ in at least one substituent or functional group.
  • one of the absorber materials is a compound comprising triazine groups and the at least one second absorber material is an inorganic or organic absorber material which does not comprise a triazine group, for example a compound comprising a benzotriazole group.
  • this absorber material preferably has the structure of the formula where R a is selected from the group consisting of H, -alkyl, O-alkyl-O-alkyl*, cycloalkyl, alkenyl, and where R b and R c are each independently selected from the group consisting of H, halides, alkyi, cycloalkyl, aryl, heteroaryl, O-alkyl and -S-alkyl, and where R d and R f are each independently selected from the group consisting of H, -OH; O- alkyl, -NR'R", -S-alkyl, -SO 3 H and COOalkyl, and where R' and R" are each independently H or alkyl.
  • alkyl or "alkyl radical” or “alkyl*” as used in the context of the present invention is generally understood to mean substituted or unsubstituted Ci-C 2 5-alkyl radicals. Preference is given to C to C-io-alkyl radicals, particular preference to C-r to Ce-alkyl radicals.
  • the alkyl radicals may be either unbranched or branched. In addition, the alkyl radicals may be substituted or unsubstituted. Preferred alky!
  • radicals are methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl and octyl, and also isopropyl, isobutyl, isopentyl, sec-butyl, tert-butyl, neopentyl, 3,3-dimethylbutyl and 2-ethylhexyl.
  • aryl or “aryl group” or “aryl radical” as used in the context of the present invention is understood to mean optionally substituted Ce-C3o-ary! radicals derived from monocyclic, bicyclic, tricyclic and polycyclic aromatic rings, and wherein the aromatic rings do not comprise any ring heteroatoms.
  • the aryl radical preferably comprises 5- and/or 6-membered aromatic rings.
  • aryl in the context of the present invention also comprises, for example, bicyclic or tricyclic radicals in which either both or all three radicals are aromatic, and bicyclic or tricyclic radicals in which only one ring is aromatic, and tricyclic radicals in which two rings are aromatic.
  • the heteroaryls in the context of the invention comprise preferably 5 to 30 ring atoms. They may be monocyclic, bicyclic or tricyclic, and some can be derived from the aforementioned any! in which at least one carbon atom in the aryl base skeleton has been replaced by a heteroatom.
  • Preferred heteroatoms are N, O and S. More preferably, the heteroaryl radicals have 5 to 13 ring atoms.
  • R and R c radicals are optionally substituted radicals in which at least one hydrogen radical of an alkyl group, aryl group or heteroaryl group has been replaced by a substituent.
  • alkyl radicals especially methyl, halogen, carboxy! groups, ester groups and hydroxyl radicals.
  • at least one of the R and R c radicals is an aryl radical or heteroaryl radical, for example an optionally substituted radical selected from the group consisting of phenyl, biphenyl, naphthyl, pyrrolyl and pyridyl.
  • At least one of the R b and R c radicals is an aryl radical, further preferably a phenyl radical, and further preferably a phenyl radical substituted by at least one methyl group, preferably by at least two methyl groups.
  • the R b und R c radicals are each aryl radicals, further preferably phenyl radicals, and further preferably phenyl radicals substituted by at least two methyl groups.
  • the R b and R c radicals is an aryl radical, it preferably has the structure
  • the present invention also describes a longpass filter comprising at least two different absorber materials introduced, especially mixed, into the matrix material, at least absorber material being a compound with the following structure:
  • the absorber material has the following structure: especially the following structure:
  • R d and R f radicals are, as described above, each independently selected from the group consisting of H, -OH; O-alkyl, -NR'R", -S-alkyl, -S0 3 H and -COOalkyl; more preferably, R f is -OH and R d is alkyl or H, preferably H.
  • R a radical it is preferably -OH, -alkyl or -O-alky!-O-alkyi, especially -OH or O- alkyl-O-alkyi where the two alkyl groups may be different than one another.
  • the 0-alkyl-O-alkyl radical preferably has the structure -CH2C(H)(0H)-CH2-0-alkyl, in which case alky! is preferably a linear alkyl group, especially a linear alkyl group having 12 or 13 carbon atoms.
  • absorber materials examples include the following absorber materials:
  • the at least one absorber material has a structure of the following formula: H2-Oaikyi
  • the longpass filter comprises, as at least one absorber material, a compound comprising benzotriazole groups, preferably a compound of the following formula: where R ba , R bb , R bc , R bd and R be are each independently selected from the group consisting of H, -alkyl, -OH, -alkylaryl, -alkylheteroaryl, -cycloalkyi, cycloheteroalkyi, alkenyl, aryl and -SO 3 H, and where R bf and R b a are each independently selected from the group consisting of H, halides, alkyl, cycloalkyi, aryl, heteroaryl and radicals in which R f and Reform an optionally substituted cycloalkyi or
  • cycloheteroalkyi ring or ""cycloheteroalkyi” within the meaning of the present invention is denoted to mean a non-aromatic monocyciic or polycyclic alkyi ring comprising at least one heteroatom and may, also be referred to as heterocycloalkyl ring.
  • alkylaryl as used in the context of the present invention relates to radicals with the - alkyl-aryl structure which are attached via the alkyi group. Both the alkyi group and the aryl group include substituted radicals in this context. With regard to the term “substituted”, reference is made to the above remarks.
  • alkylheteroaryl as used in the context of the present invention relates to radicals with the -alkyi-heteroaryl structure which are attached via the alkyi group. Both the alkyi group and the heteroaryl group include substituted radicals in this context. With regard to the term
  • R bf and Reform an optionally substituted cycloalkyl or cycloheteroalkyl ring are disclosed, for example in WO 2008/000646.
  • the longpass filter comprises, as at least one absorber material, a compound which comprises benzotriazole groups and is selected from the compounds of the following formulae:
  • R bx , R b y and R* 2 are each independently radicals selected from the group consisting of H, alkyl, aryl, heteroaryl, alkylaryl, alkylheteroaryl, alkenyl and alkynyl,
  • X x is O or S
  • At least one of the R 3 , R bb , R bc , R M and R be radicals is -OH;
  • R ba is -OH
  • the benzotriazole-comprising compound is preferably a compound of the following formula:
  • the benzotriazole-comprising compound is a compound of the following formula:
  • R E is preferably alky!, especially a C2-C20 atkyl radical.
  • R bb and R bd are preferably each independently alkyiaryl groups, especially alkylphenyl groups, or alkyl groups, especially alkyl groups having 5 to 15 carbon atoms. Examples include the brand names of the following commercially available absorbers comprising a benzotriazole group: TINUV!N 384, TINUVIN 928, TINUVIN 900, TINUVIN 328 and TINUVIN 1130, and Xymara ® Carboprotect (BASF).
  • one absorber material is preferably a compound comprising a triazine as described above, especially a compound of the formula:
  • alkyl is preferably a linear alkyl group, especially a linear alkyl group having 12 or 13 carbon atoms
  • the second absorber material is preferably a benzotriazole-comprising compound, especially a compound of the following formula: further preferably of the following formula:
  • the matrix material comprises Xymara ® Carboprotect, especially Tinuvin 400 and Xymara ® Carboprotect.
  • the matrix material comprises this compound preferably in an amount in the range from 0.05 to 3% by weight, preferably in an amount in the range from 0.1 to 2.5% by weight, and further preferably in an amount in the range from 0.2 to 2% by weight, based on the total weight of the matrix material.
  • the matrix material comprises this compound preferably in an amount in the range from 0.05 to 3% by weight, preferably in an amount in the range from 0.1 to 2.5% by weight, and further preferably in an amount in the range from 0.2 to 2% by weight, based on the total weight of the matrix material.
  • the matrix material comprises the benzotriazole-comprising compound preferably in an amount in the range from 0.05 to 3% by weight, preferably in an amount in the range from 0.1 to 2.5% by weight and further preferably in an amount in the range from 0.2 to 2% by weight, and the compound comprising a triazine group preferably in the range from 0.05 to 3% by weight, preferably in an amount in the range from 0.1 to 2.5% by weight, and further preferably in an amount in the range from 0.2 to 2% by weight, based in each case on the total weight of the matrix material.
  • the organic hole conductor material may especially be a solid organic hole conductor material or comprise at least one solid organic hole conductor material.
  • the organic hole conductor material more preferably comprises an arylamine compound and/or a spiro compound, or is configured as such an arylamine compound and/or as a spiro compound. More particularly, it may be a spiro compound. Examples are cited in more detail below. Particular preference is given to the use of spiro-MeOTAD, further details of which are likewise given below.
  • the organic hole conductor material may comprise a compound having the structural formula (I) elucidated in detail below.
  • Such hole conductor materials have a short-wave absorption spectrum which generally has a characteristic wavelength AHTL in a region below typically 440 nm and especially below 430 nm, such that this characteristic wavelength is generally at a clear distance in the spectrum from the absorption of the dye of the photovoltaic element, which typically has an absorption maximum within a spectral range from 500 to 800 nm, preferably within a spectral range from 550 to 700 nm. in this way, use of a sufficiently steep longpass filter can effectively prevent or at least suppress the absorption by the organic hole conductor material, whereas the absorption by the dye, which is desired in the context of the function of the photovoltaic element, is influenced only insignificantly, if at all.
  • AHTL characteristic wavelength
  • the longpass filter may especially comprise at least one inorganic filter material, especially a metal oxide and more preferably an inorganic filter material selected from the group consisting of: S1O2; T1O2; ZrCh and Ta20 5 .
  • the longpass filter may especially have at least one layer structure with one or more layers, for example with one or more layers of the inorganic and/or organic filter material. For application of the at least one filter material, it is possible to use different processes.
  • sol-gel processes For example, physical vapor phase deposition processes such as sputtering, vapor deposition or similar processes can be used, and/or chemical vapor phase deposition processes.
  • wet-chemical processes for example what are called sol-gel processes.
  • sol-gel processes one or more dispersions, especially colloidal dispersions, of the at least one filter material and/or of at least one starting material of the at least one filter material, for example of at least one precursor, are used.
  • these may comprise one or more alkoxides of one or more metals.
  • Sol particles are deposited on the substrate and gelate there, with conversion of the sol to an at least nearly solid or gelated state, which is referred to as a gel and may generally still comprise solvent components.
  • the substrate coated in this way can be dried and optionally then subjected to a thermal treatment, for example to one or more sintering steps.
  • sol-gel processes it is generally possible to use wet-chemical processes to apply the sol to the substrate, for example dip coating, spin coating, knife coating or spraying.
  • Sol-gel coatings are known, for example, from the field of production of interference filters for optical applications and/or for antireflection coating and/or for generation of color effects in the lighting industry.
  • the at least one longpass filter may thus especially have at least one interference filter.
  • Longpass filters produced by sol-gel coating are commercially available. As described above, it is possible by means of the so!-gel process, for example, to directly coat the substrate of the photovoltaic element on the side facing the layer structure and/or on the side remote from the layer structure. Alternatively or additionally, the longpass filter, however, may also be configured as a separate element.
  • the longpass filter may also comprise at least one organic filter dye.
  • filter dyes known from the prior art. Suitable examples are in principle all photochemically stable UV absorbers, which preferably additionally have absorptions in the blue spectral range in order to be able to be used in accordance with the invention. It is alternatively or additionally also possible to use rylene dyes, especially naphthalenedicarboxylic monoimides or else
  • naphthalenetetracarboxylic diimides as longpass filters, and/or parts thereof. According to this embodiment, preference is given to using naphthalenedicarboxylic monoimides or
  • naphthalenetetracarboxylic diimides selected from the following structures:
  • Ri is preferably selected from the group consisting of aikyl, aryl and heteroaryl
  • R2 and f3 ⁇ 4 are preferably each independently selected from the group consisting of H, aikyl, cyano (-CN) and alkoxy.
  • alkoxy is understood to mean a functional group based on an aikyl group bonded to an oxygen atom. Examples include methoxy and ethoxy.
  • Ri is more preferably an akyl radical or aryl radical, especially an aikyl radical or an optionally substituted phenyl radical.
  • the longpass filter may, as described above, be producible especially by a wet-chemical process. More particularly, the longpass filter may be producible by applying a solution comprising at least one filter material and at least one solvent to a substrate, and the solvent is then removed.
  • solution here, apart from a solution in the actual sense, should be interpreted such that it can in principle also comprise a dispersion and/or emulsion.
  • the at least one filter material may be organic and/or inorganic in nature.
  • the at least one substrate may be completely or partially identical to the substrate of the photovoltaic element to which the abovementioned layer structure is also applied, but may in principle also be configured as a separate substrate.
  • the solvent can be removed from the substrate, for example, by drying and/or spinning off, optionally also supported by heating.
  • the n-conductive metal oxide may especially comprise titanium dioxide (T1O2). Such materials have been found to be particularly suitable in solid dye solar cells.
  • the dye may especially have an absorption with a decadic absorbance of at least 0.1 , especially of at least 0.3 and more preferably of at least 0.5 or even at least 1.0 at a wavelength in a spectral region above AHTL. More particularly, the absorbances mentioned may be at one or more wavelengths within a spectral range from 480 to 700 nm and more preferably within a spectral range from 550 to 750 nm. The absorbances can be defined and determined in an analogous manner to the above-described absorbance of the organic hold conductor material.
  • the photovoltaic element may also have at least one encapsulation.
  • This encapsulation may be designed to keep air humidity and/or oxygen away from the organic hole conductor material and preferably the dye.
  • the encapsulation may be applied, for example, as a solid capsule and/or may comprise one or more encapsulation layers.
  • a process is proposed for producing a photovoltaic element for conversion of electromagnetic radiation to electrical energy.
  • the photovoltaic element may especially be a photovoltaic element according to one or more of the
  • At least one first electrode, at least one n-semiconductive metal oxide, at least one dye for absorption of at least a portion of the electromagnetic radiation, at least one organic hole conductor material and at least one second electrode are provided, more particularly by application to a substrate and preferably in the sequence mentioned.
  • this application may produce a layer structure.
  • the organic hole conductor material is selected such that, in the photovoltaic element, it has an absorption spectrum for the electromagnetic radiation which has an absorption maximum in an ultraviolet or blue spectral region and then, toward higher wavelengths, has an absorption edge declining with the wavelength of the
  • At least one longpass filter is provided, especially likewise by application to the substrate, said longpass filter having a transmission edge rising with the wavelength of the electromagnetic radiation and having a characteristic wavelength ALP.
  • ALP and AHTL are selected such that the following relationship applies: AHTL - 30 nm ⁇ A L p ⁇ AHTL + 30 nm.
  • a process is proposed for selection of a longpass filter for use in a photovoltaic element for conversion of electromagnetic radiation to electrical energy. More particularly, this may be a photovoltaic element according to one of the configurations described above or still to be described below, and so reference may be made to the description above or below with regard to preferred embodiments.
  • the photovoltaic element has at least one first electrode, at least one n-semiconductive metal oxide, at least one dye for absorption of at least a portion of the electromagnetic radiation, at least one organic hole conductor material and at least one second electrode.
  • the process comprises the following steps: determining an absorption spectrum of the organic hole conductor material in the photovoltaic element, - evaluating the absorption spectrum and determining a characteristic wavelength AHTL, the characteristic wavelength being within a declining absorption edge in which an absorption of the organic hole conductor material in the photovoltaic element declines proceeding from an absorption maximum in an ultraviolet or blue spectral range, a decadic absorbance of the hole conductor material at the characteristic wavelength AHTL being 0.3,
  • the longpass filter such that the longpass filter has a transmission edge rising with the wavelength of the electromagnetic radiation and having a characteristic wavelength ALP, a transmission of the longpass filter at ALP being 50% of a maximum transmission of the longpass filter, where AHTL - 30 nm ⁇ ALP ⁇ A H TL + 30 nm.
  • the n-semiconductive metal oxide used in the photovoltaic element may be a single metal oxide or a mixture of different oxides. It is also possible to use mixed oxides.
  • the n-semiconductive metal oxide may especially be porous and/or be used in the form of a nanoparticulate oxide, nanoparticles in this context being understood to mean particles which have an average particle size of less than 0.1 micrometer.
  • a nanoparticulate oxide is typically applied to a conductive substrate (i.e. a carrier with a conductive layer as the first electrode) by a sintering process as a thin porous film with large surface area.
  • the substrate may be rigid or else flexible.
  • Suitable substrates also referred to hereinafter as carriers
  • metal foils in particular plastic sheets or films and especially glass sheets or glass films.
  • Particularly suitable electrode materials, especially for the first electrode according to the above-described, preferred structure are conductive materials, for example transparent conductive oxides (TCOs), for example fluorine- and/or indium-doped tin oxide (FTO or ITO) and/or aluminum-doped zinc oxide (AZO), carbon nanotubes or metal films.
  • TCOs transparent conductive oxides
  • FTO or ITO fluorine- and/or indium-doped tin oxide
  • AZO aluminum-doped zinc oxide
  • the substrate can be covered or coated with these conductive materials. Since generally only a single substrate is required in the structure proposed, the formation of flexible ceils is also possible. This enables a multitude of end uses which would be achievable only with difficulty, if at all, with rigid substrates, for example use in bank cards, garments, etc.
  • the first electrode especially the TCO layer, may additionally be covered or coated with a solid metal oxide buffer layer (for example of thickness 10 to 200 nm), in order to prevent direct contact of the p-semiconductor with the TCO layer (see Peng eta/., Coord. Chem. Rev. 248, 1479 (2004)).
  • a solid metal oxide buffer layer for example of thickness 10 to 200 nm
  • the inventive use of solid p-semiconductive electrolytes in the case of which contact of the electrolyte with the first electrode is greatly reduced compared to liquid or gel- form electrolytes, however, makes this buffer layer unnecessary in many cases, such that it is possible in many cases to dispense with this layer, which also has a current-limiting effect and can also worsen the contact of the n-semiconductive metal oxide with the first electrode.
  • buffer layer can in turn be utilized in a controlled manner in order to match the current component of the dye solar cell to the current component of the organic solar cell.
  • buffer layers are advantageous in many cases specifically in solid cells.
  • the metal oxides therefore generally, as is the case in the dye solar cells, have to be combined with a dye as a photosensitizer, which absorbs in the wavelength range of sunlight, i.e. at 300 to 2000 nm, and, in the electronically excited state, injects electrons into the conduction band of the semiconductor.
  • a dye as a photosensitizer, which absorbs in the wavelength range of sunlight, i.e. at 300 to 2000 nm, and, in the electronically excited state, injects electrons into the conduction band of the semiconductor.
  • a solid p- semiconductor used additionally in the cell as an electrolyte, which is in turn reduced at the counterelectrode, electrons can be recycled to the sensitizer, such that it is regenerated.
  • metal oxides can be used in the form of nanocrystaliine porous layers. These layers have a large surface area which is coated with the dye as a sensitizer, such that a high absorption of sunlight is achieved.
  • Metal oxide layers which are structured, for example nanorods, give advantages such as higher electron mobilities or improved pore filling by the dye.
  • the metai oxide semiconductors can be used alone or in the form of mixtures. It is also possible to coat a metal oxide with one or more other metal oxides. In addition, the metal oxides may also be applied as a coating to another semiconductor, for example GaP, ZnP or ZnS.
  • Particularly preferred semiconductors are zinc oxide and titanium dioxide in the anatase polymorph, which is preferably used in nanocrystaliine form.
  • the sensitizers can advantageously be combined with all n-semiconductors which typically find use in these solar cells.
  • Preferred examples include metal oxides used in ceramics, such as titanium dioxide, zinc oxide, tin(IV) oxide, tungsten(VI) oxide, tantalum(V) oxide, niobium(V) oxide, cesium oxide, strontium titanate, zinc stannate, complex oxides of the perovskite type, for example barium titanate, and binary and ternary iron oxides, which may also be present in nanocrystaliine or amorphous form.
  • n-semiconductive metal oxide Due to the strong absorption that customary organic dyes and phthalocyanines and porphyrins have, even thin layers or films of the n-semiconductive metal oxide are sufficient to absorb the required amount of dye. Thin metal oxide films in turn have the advantage that the probability of unwanted recombination processes falls and that the inner resistance of the dye subcell is reduced.
  • layer thicknesses 100 nm up to 20 micrometers, more preferably in the range between 500 nm and approx. 3 micrometers.
  • DSCs in particular, the terms "dye”, “sensitizer dye” and “sensitizer” are used essentially synonymously without any restriction of possible configurations.
  • Numerous dyes which are usable in the context of the present invention are known from the prior art, and so, for possible material examples, reference may also be made to the above description of the prior art regarding dye solar ceils. All dyes listed and claimed may in principle also be present as pigments.
  • Dye-sensitized solar cells based on titanium dioxide as a semiconductor materia! are described, for example, in US-A-4 927 721 , Nature 353, p. 737-740 (1991) and US-A-5 350 644, and also Nature 395, p.
  • These dye solar cells preferably comprise monomoiecular films of transition metal complexes, especially ruthenium complexes, which are bonded to the titanium dioxide layer via acid groups as sensitizers.
  • sensitizers which have been proposed repeatedly include metal- free organic dyes, which are likewise also usable in the context of the present invention.
  • US-A- 6 359 211 describes the use, also implementable in the context of the present invention, of cyanine, oxazine, thiazine and acridine dyes which have carboxyl groups bonded via an alkylene radical for fixing to the titanium dioxide semiconductor.
  • Organic dyes now achieve efficiencies of almost 12.1 % in liquid ceils (see, for example, Wang eta/., ACS. Nano 2010). Pyridinium-containing dyes have also been reported, can be used in the context of the present invention and exhibit promising efficiencies.
  • Particularly preferred sensitizer dyes in the photovoltaic element are the peryiene derivatives, terrylene derivatives and quaterrylene derivatives described in DE 10 2005 053 995 A1 or WO 2007/054470 A1.
  • the use of these dyes which is also possible in the context of the present invention, leads to photovoltaic elements with high efficiencies and simultaneously high stabilities.
  • the rylenes exhibit strong absorption in the wavelength range of sunlight and can, depending on the length of the conjugated system, cover a range from about 400 nm (peryiene derivatives I from DE 10 2005 053 995 A1 ) up to about 900 nm (quaterrylene derivatives I from
  • Rylene derivatives I based on terrylene absorb, according to the composition thereof, in the solid state adsorbed onto titanium dioxide, within a range from about 400 to 800 nm.
  • the rylene derivatives I can be fixed easily and in a permanent manner to the n-semiconductive metal oxide film.
  • the bonding is effected via the anhydride function (x1 ) or the carboxyl groups - COOH or -COO- formed in situ, or via the acid groups A present in the imide or condensate radicals ((x2) or (x3)).
  • the rylene derivatives I described in DE 10 2005 053 995 A1 have good suitability for use in dye-sensitized solar cells in the context of the present invention.
  • the dyes at one end of the molecule, have an anchor group which enables the fixing thereof to the n-semiconductor film.
  • the dyes preferably comprise electron donors Y which facilitate the regeneration of the dye after the electron has been released to the n-semiconductor, and also prevent recombination with electrons already released to the semiconductor.
  • the dyes can be fixed onto or into the n-semiconductive metal oxide films in a simple manner.
  • the n-semiconductive metal oxide films can be contacted in the freshly sintered (still warm) state over a sufficient period (for example about 0.5 to 24 h) with a solution or suspension of the dye in a suitable organic solvent. This can be accomplished, for example, by immersing the metal oxide-coated substrate into the solution of the dye.
  • combinations of different dyes are to be used, they may, for example, be applied successively from one or more solutions or suspensions which comprise one or more of the dyes. It is also possible to use two dyes which are separated by a layer of, for example, CuSCN (on this subject see, for example, Tennakone, K.J., Phys. Chem. B. 2003, 107, 13758). The most convenient method can be determined comparatively easily in the individual case.
  • the organic solar cell should be configured such that a maximum amount of light is absorbed.
  • the oxide layers should be structured such that the solid p-semiconductor can efficiently fill the pores. For instance, smaller particles have greater surface areas and are therefore capable of adsorbing a greater amount of dyes. On the other hand, larger particles generally have larger pores which enable better penetration through the p-conductor.
  • the photovoltaic element has at least one organic hole conductor material. More particularly, this may be a solid organic hole conductor material.
  • organic hole conductor material As usual in the context of organic electronics and photovoltaics, the terms "hole conductor material”, “p-semiconductive material”, “p-conductor” and “p-semiconductor” are used synonymously, since the transitions between insulators, semiconductors and conductors in this field of industry are generally fluid, and since a distinction between intrinsically conductive materials and materials which become conductive only after doping or an injection of external charge carriers is possible only with difficulty in practice.
  • organic p-semiconductors are described hereinafter, and these can be used individually or else in any combination, for example in a combination of a plurality of layers with a p-semiconductor in each case, and/or in a combination of several p- semiconductors in one layer.
  • the passivation layer In order to prevent recombination of the electrons in the n-semiconductive metal oxide with the solid p-conductor, it is possible to use, between the n-semiconductive metal oxide and the p- semiconductor, at least one passivating layer which has a passivating material. This layer should be very thin and should as far as possible cover only the as yet uncovered sites of the n- semiconductive metal oxide.
  • the passivation material may, under some circumstances, also be applied to the metal oxide before the dye.
  • Preferred passivation materials are especially one or more of the following substances: AI2O3; silanes, for example CH 3 SiCI 3 ; Al 3+ ; 4-tert-butylpyridine (TBP); MgO; GBA (4-guanidinobutyric acid) and similar derivatives; alkyl acids;
  • HDMA hexadecylmalonic acid
  • an organic hole conductor material or p-semiconductor is generally understood to mean a material, especially an organic material, which is capable of conducting holes, i.e. positive charge carriers. More particularly, it may be an organic material with an extensive ⁇ -electron system which can be oxidized stably at least once, for example to form what is called a free- radical cation.
  • the p-semiconductor may comprise at least one organic matrix material which has the properties mentioned.
  • the p-semiconductor may optionally have one or more dopants which enhance the p-semiconductive properties.
  • a significant parameter influencing the selection of the p-semiconductor is the hole mobility, since this partly determines the hole diffusion length (cf. Kumara, G., Langmuir, 2002, 18, 10493-10495).
  • a comparison of charge carrier mobilities in different spiro compounds can be found, for example, in T. Saragi, Adv. Funct. Mater. 2006, 16, 966-974.
  • organic semiconductors are used (i.e. low molecular weight, oligomeric or polymeric semiconductors or mixtures of such semiconductors).
  • p-semiconductors which can be processed from a liquid phase. Examples here are p-semiconductors based on polymers such as polythiophene and polyarylamines, or on amorphous, reversibly oxidizable, nonpolymeric organic compounds, such as the spirobif!uorenes mentioned at the outset (cf., for example, US 2006/0049397 and the spiro compounds disclosed therein as p-semiconductors, which are also usable in the context of the present invention).
  • Preference is given to using low molecular weight organic semiconductors.
  • the p-semiconductor is preferably producible or produced by applying at least one p-conductive organic material to at least one carrier element, the application being effected, for example, by deposition from a liquid phase which comprises the at least one p-conductive organic material.
  • the deposition can in turn in principle be effected by any deposition process, for example by spin coating, knife coating, printing or combinations of these and/or other deposition processes.
  • the organic p-semiconductor may especially comprise at least one spiro compound and/or especially be selected from: a spiro compound, especially spiro-MeOTAD; a compound with the structural formula:
  • a 1 , A 2 A 3 are each independently optionally substituted aryl groups or heteroaryl groups,
  • R 1 , R 2 , R 3 are each independently selected from the group consisting of the substituents -R, -OR, -NR 2 , -A 4 -OR and -A -NR 2 , where R is selected from the group consisting of alkyl, aryi and heteroaryl, and where A 4 is an aryl group or heteroaryl group, and where n at each instance in formula I is independently a value of 0, 1, 2 or 3, with the proviso that the sum of the individual values n is at least 2 and at least two of the R , R 2 and R 3 radicals are -OR and/or -NR 2 .
  • a 2 and A 3 are the same; accordingly, the compound of the formula (I) preferabiy has the following structure (la)
  • the p-semiconductor may thus especially, as stated above, have at least one low molecular weight organic p-semiconductor.
  • a low molecular weight material is generally understood to mean a material which is present in monomeric, unpolymerized or unoligomerized form.
  • the term "low molecular weight" as used in the present context preferably means that the p-semiconductor has molecular weights in the range from 100 to 25 000 g/mol.
  • the low molecular weight substances preferably have molecular weights of 500-2000 g/mol.
  • p-semiconductive properties are understood to mean the property of materials, especially of organic molecules, to form holes and to transport these holes and/or to pass them on to adjacent molecules. More particularly, stable oxidation of these molecules should be possible.
  • the low molecular weight organic p-semiconductors mentioned may especially have an extensive ⁇ -electron system. More particularly, the at least one low molecular weight p-semiconductor may be processible from a solution.
  • the low molecular weight p-semiconductor may especially comprise at least one triphenylamine. It is particularly preferred when the low molecular weight organic p- semiconductor comprises at least one spiro compound.
  • a spiro compound is understood to mean polycyclic organic compounds whose rings are joined only at one atom, which is also referred to as the spiro atom. More particularly, the spiro atom may be sp 3 -hybridized, such that the constituents of the spiro compound connected to one another via the spiro atom are, for example, arranged in different planes with respect to one another.
  • the spiro compound has a structure of the following formula:
  • Aryl 1 , Aryl 2 , Aryl 3 , Aryl 4 , Aryl 5 , Aryf 6 , Aryl 7 and Aryl 8 radicals are each independently selected from substituted aryl radicals and heteroaryl radicals, especially from substituted phenyl radicals, where the aryl radicals and heteroaryl radicals, preferably the phenyl radicals, are each independently substituted, preferably in each case by one or more substituents selected from the group consisting of -O-alkyl, -OH, -F, -Ci, -Br and -I, where alkyl is preferably methyl, ethyl, propyl or isopropyl. More preferably, the phenyl radicals are each independently substituted, in each case by one or more substituents selected from the group consisting of -CD- Me, -OH, -F, -CI, -Br and -I.
  • the spiro compound is a compound of the following formula:
  • R r , R s , R R u , R v , R w , R x and R are each independently selected from the group consisting of -O-alkyl, -OH, -F, -CI, -Br and -I, where alkyl is preferably methyl, ethyl, propyl or isopropyl. More preferably, R r , R s , R R u , R v , R w , R x and Ry are each independently selected from the group consisting of -O-Me, -OH, -F, -CI, -Br and -I.
  • the p-semiconductor may comprise spiro-MeOTAD or consist of spiro- MeOTAD, i.e. a compound commercially available, for example, from Merck KGaA, Darmstadt, Germany, and of the formula:
  • p-semiconductive compounds especially low molecular weight and/or oligomeric and/or polymeric p-semiconductive compounds.
  • the low molecular weight organic p-semiconductor comprises one or more compounds of the abovementioned general formula I, for which reference may be made, for example, to PCT application number PCT/EP2010/051826, which will be published after the priority date of the present application.
  • the p-semiconductor may comprise the at least one compound of the abovementioned general formula I additionally or alternatively to the spiro compound described above.
  • alkyi or "alkyl group” or "aikyl radical” as used in the context of the present invention is understood to mean substituted or unsubstituted C-i-C2o-alkyi radicals in general. Preference is given to Ci- to Cio-alkyl radicals, particular preference to Ci- to Cs-alkyl radicals.
  • the alkyl radicals may be either straight-chain or branched.
  • the alkyl radicals may be substituted by one or more substituents selected from the group consisting of C-i-C 2 o-aikoxy, halogen, preferably F, and Ce-C3o-aryl which may in turn be substituted or unsubstituted.
  • alkyl groups are methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl and octyl, and also isopropyl, isobutyl, isopentyl, sec-butyl, tert-butyl, neopentyl, 3,3-dimethylbutyi, 2- ethylhexyl, and also derivatives of the alkyl groups mentioned substituted by Ce-Cso-aryl, C1-C20- alkoxy and/or haiogen, especially F, for example -CF3.
  • aryl or "aryl group” or “aryl radical” as used in the context of the present invention is understood to mean optionally substituted C6-C3o-aryl radicals which are derived from
  • aryl radical preferably comprises 5- and/or 6-membered aromatic rings.
  • aryl in the context of the present invention thus comprises, for example, also bicyclic or tricyclic radicals in which either both or all three radicals are aromatic, and aiso bicyclic or tricyclic radicals in which only one ring is aromatic, and also tricyclic radicals in which two rings are aromatic.
  • aryl are: phenyl, naphthyl, indanyl, 1 ,2-dihydronaphthenyl, 1 ,4-dihydronaphthenyl, fluorenyl, indenyl, anthracenyl, phenanthrenyl or 1 ,2,3,4- tetrahydronaphthyl.
  • C6-Cio-aryl radicals for example phenyl or naphthyl
  • C6-aryl radicals for example phenyl
  • aryl also comprises ring systems comprising at least two monocyclic, bicyclic or multicyclic aromatic rings joined to one another via single or double bonds.
  • biphenyl groups are examples of biphenyl groups.
  • heteroaryl or “heteroaryl group” or “heteroaryl radical” as used in the context of the present invention is understood to mean optionally substituted 5- or 6-membered aromatic rings and multicyclic rings, for example bicyclic and tricyclic compounds having at least one heteroatom in at least one ring.
  • the heteroaryls in the context of the invention preferably comprise 5 to 30 ring atoms. They may be monocyclic, bicyclic or tricyclic, and some can be derived from the aforementioned aryl by replacing at least one carbon atom in the aryl base skeleton with a heteroatom.
  • Preferred heteroatoms are N, O and S.
  • the hetaryl radicals more preferably have 5 to 13 ring atoms.
  • the base skeleton of the heteroaryl radicals is especially preferably selected from systems such as pyridine and five-membered heteroaromatics such as thiophene, pyrrole, imidazole or furan. These base skeletons may optionally be fused to one or two six-membered aromatic radicals.
  • heteroaryl also comprises ring systems comprising at least two monocyclic, bicyciic or multicyclic aromatic rings joined to one another via single or double bonds, where at least one ring comprises a heteroatom.
  • heteroaryl when the heteroaryls are not monocyclic systems, in the case of the term “heteroaryl” for at least one ring, the saturated form (perhydro form) or the partly unsaturated form (for example the dihydro form or tetrahydro form), provided the particular forms are known and stable, is also possible.
  • the term “heteroaryl” in the context of the present invention thus comprises, for example, also bicyclic or tricyclic radicals in which either both or all three radicals are aromatic, and aiso bicyclic or tricyclic radicals in which only one ring is aromatic, and also tricyciic radicals in which two rings are aromatic, where at least one of the rings, i.e. one aromatic or one nonaromatic ring has a heteroatom.
  • Suitable fused heteroaromatics are, for example, carbazolyl,
  • the base skeleton may be substituted at one, more than one or all substitutable positions, suitable substituents being the same as have already been specified under the definition of C6-C3o-aryl.
  • the hetaryl radicals are preferably unsubstituted.
  • Suitable hetaryl radicals are, for example, pyridin-2-yl, pyridin-3-yl, pyridin-4-yl, thiophen-2-yl, thiophen-3-yl, pyrrol-2-yl, pyrrol-3-yl, furan-2-yl, furan-3- yl and imidazol-2-yl and the corresponding benzofused radicals, especially carbazolyl, benzimidazolyl, benzofuryl, dibenzofury! or dibenzothiophenyl.
  • the term "optionally substituted” refers to radicals in which at least one hydrogen radical of an alkyl group, aryl group or heteroaryi group has been replaced by a substituent.
  • alkyi radicals for example methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl and octyl, and also isopropyl, isobutyl, isopentyl, sec-butyl, tert-buty!, neopentyl, 3,3-dimethyibutyl and 2-ethylhexyl, aryl radicals, for example C6-Cio-aryl radicals, especially phenyl or naphthyl, most preferably C 6 -aryl radicals, for example phenyl, and hetaryl radicals, for example pyridin-2-yl, pyridin-3-
  • the degree of substitution here may vary from monosubstitution up to the maximum number of possible substituents.
  • Preferred compounds of the formula I for use in accordance with the invention are notable in that at least two of the R 1 , R 2 and R 3 radicals are para-OR and/or -NR 2 substituents.
  • the at least two radicals here may be oniy -OR radicals, only - R2 radicals, or at least one -OR and at least one -NR 2 radical.
  • Particularly preferred compounds of the formula I for use in accordance with the invention are notable in that at least four of the R 1 , R 2 and R 3 radicals are para-OR and/or -NR 2 substituents.
  • the at least four radicals here may be only -OR radicals, only -NR 2 radicals or a mixture of -OR and -NR 2 radicals.
  • R 1 , R 2 and R 3 radicals are para-OR and/or -NR2 substituents. They may be only -OR radicals, only -NR2 radicals or a mixture of -OR and -NR 2 radicals.
  • the two R in the -NR2 radicals may be different from one another, but they are preferably the same.
  • a 1 , A 2 and A 3 are each independently selected from the group consisting of
  • n is an integer from 1 to 18,
  • R 4 is alkyi, aryl or heteroaryl, where R 4 is preferably an aryl radical, more preferably a phenyl radical,
  • R 5 , R 6 are each independently H, alkyl, aryl or heteroaryl, where the aromatic and heteroaromatic rings of the structures shown may optionally have further substitution.
  • the degree of substitution of the aromatic and heteroaromatic rings here may vary from monosubstitution up to the maximum number of possible substituents.
  • Preferred substituents in the case of further substitution of the aromatic and heteroaromatic rings include the substituents already mentioned above for the one, two or three optionally substituted aromatic or heteroaromatic groups.
  • the aromatic and heteroaromatic rings of the structures shown do not have further substitution.
  • the at least one compound of the formula (I) has one of the following structures:
  • the organic p-semiconductor comprises a compound of the ID322 type with the following structure:
  • the compounds for use in accordance with the invention can be prepared by customary methods of organic synthesis known to those skilled in the art. References to relevant (patent) literature can additionally be found in the synthesis examples adduced below.
  • the second electrode may especially be a bottom electrode facing the substrate or else a top electrode facing away from the substrate.
  • the second electrodes which can be used are especially metal electrodes which may have one or more metals in pure form or as a
  • mixture/alloy such as especially aluminum or silver.
  • inorganic/organic mixed electrodes or multilayer electrodes is also possible, for example the use of LiF/AI electrodes.
  • Such layered structures are also referred to as "concentrators” and are likewise described, for example, in WO 02/101838 (particularly p. 23-24).
  • the organic solar cell may further comprise at Ieast one encapsulation, the encapsulation being designed to shield the organic solar cell, more particularly the electrodes and/or the p- semiconductor, from an ambient atmosphere.
  • the following embodiments are considered to be particularly preferred:
  • Embodiment 1 A photovoltaic element for conversion of electromagnetic radiation to electrical energy, comprising at Ieast one first electrode, at Ieast one n-semiconductive metal oxide, further comprising at Ieast one dye for absorption of at Ieast a portion of the
  • electromagnetic radiation further comprising at Ieast one organic hole conductor material and at Ieast one second electrode, said organic hole conductor material in said photovoltaic element having an absorption spectrum for the electromagnetic radiation having an absorption maximum in an ultraviolet or blue spectral region and then, toward higher wavelengths, an absorption edge declining with the wavelength of the electromagnetic radiation and having a characteristic wavelength AHTL, a decadic absorbance of the hole conductor material at a wavelength AHTL within the declining absorption edge being 0.3, said photovoltaic element further having at least one longpass filter, said longpass filter having a transmission edge rising with the wavelength of the electromagnetic radiation and having a characteristic wavelength ALP, a transmission of the longpass filter at ALP being 50% of a maximum transmission of the longpass filter, where AHTL - Embodiment 2: The photovoltaic element according to the preceding embodiment, wherein AHTL ⁇ 440 nm, especially AHTL ⁇ 430 nm, preferably AHTL ⁇ 425 nm and more preferably
  • Embodiment 3 The photovoltaic element according to either of the preceding
  • the absorption spectrum of the organic hole conductor material at a wavelength of AHTL + 30 nm has declined to a decadic absorbance of less than 0.2, preferably to less than 0.1 and more preferably to less than 0.05, and for wavelengths of AHTL + 30 nm to 800 nm has a decadic absorbance of less than 0.2, preferably of less than 0. 1 and more preferably of less than 0.05.
  • Embodiment 4 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter has an edge steepness SLP of the rising transmission edge, where SLP is ⁇ 1.2 eV, preferably SLP ⁇ 1 .0 eV and more preferably S L p ⁇ 0.8 eV.
  • Embodiment 5 The photovoltaic element according to any of the preceding embodiments, wherein the photovoltaic element has a transparent substrate, the longpass filter having been applied to the transparent substrate.
  • Embodiment 6 The photovoltaic element according to the preceding embodiment, wherein the first electrode or the second electrode have been applied to a first side of the substrate, the longpass filter having been applied to a second side of the substrate opposing the first side.
  • Embodiment 7 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter in at least one transmission region takes up a transmission of at least 75%, especially of at least 80% and more preferably of at least 85%.
  • Embodiment 8 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter in at least one absorption region takes up a decadic absorbance of at least 3 and more preferably of at least 4.
  • Embodiment 9 The photovoltaic element according to any of the preceding embodiments, wherein the organic hole conductor material is a solid organic hole conductor material.
  • Embodiment 10 The photovoltaic element according to any of the preceding embodiments, wherein the organic hole conductor material is or comprises an arylamine compound and/or a spiro compound, especially a spiro compound with a structure of the following formula:
  • Aryl , Aryi 2 , Aryl 3 , Aryl 4 , Aryl 5 , Aryl 6 , Aryl 7 and Aryl 8 radicals are each independently selected from substituted aryl radicals and heteroaryi radicals, especially from substituted phenyl radicals, where the aryi radicals and heteroaryl radicals, preferably the phenyl radicals, are preferably each independently substituted by one or more substituents selected from the group consisting of -O-alkyl, -OH, -F, -CI, -Br and -I, where alkyl is preferably methyl, ethyl, propyl or isopropyl, where the phenyl radicals are more preferably each independently substituted by one or more substituents selected from the group consisting of -O-Me, -OH, -F, - CI, -Br and -I, preferably a spiro compound of the following formula:
  • Embodiment 11 The photovoltaic element according to any of the preceding embodiments, wherein the organic hole conductor material is or comprises a compound with the following structural formula:
  • a 1 , A 2 , A 3 are each independently optionally substituted aryl groups or heteroaryl groups,
  • R 1 , R 2 , R 3 are each independently selected from the group consisting of the substituents -R, OR, -NR 2 , -A -OR and -A -NR 2 , where R is selected from the group consisting of alkyl, aryl and heteroary!, and where A 4 is an aryl group or heteroaryl group, and where n at each instance in formula I is independently a value of 0, 1 , 2 or 3, with the proviso that the sum of the individual values n is at least 2 and at least two of the R , and R 3 radicals are -OR and/or -NR 2 .
  • Embodiment 12 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter comprises at least one inorganic filter material, especially a metal oxide and more preferably an inorganic filter material selected from the group consisting of S1O2, T1O2, ZrO ⁇ and Ta20s.
  • the longpass filter comprises at least one inorganic filter material, especially a metal oxide and more preferably an inorganic filter material selected from the group consisting of S1O2, T1O2, ZrO ⁇ and Ta20s.
  • Embodiment 13 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter is producible by means of a sol-gel process.
  • Embodiment 14 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter comprises at least one organic filter dye, especially at least one rylene dye.
  • Embodiment 15 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter is producible by applying a solution comprising at least one filter material and at least one solvent to a substrate, and then the solvent is removed.
  • Embodiment 16 The photovoltaic element according to any of the preceding embodiments, wherein the n-semiconductive metal oxide comprises T1O2.
  • Embodiment 17 The photovoltaic element according to any of the preceding embodiments, wherein the dye has an absorption with a decadic absorbance of at least 0.1 , especially of at least 0.3 and more preferably of at least 0.5 or even at least 1.0 at at least one wavelength in a spectral range above AHTL.
  • Embodiment 18 The photovoltaic element according to any of the preceding embodiments, wherein the photovoltaic element further comprises at least one encapsulation, said
  • encapsulation being designed to keep air humidity and oxygen away from the organic hole conductor material and preferably the dye.
  • Embodiment 19 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter comprises at least one transparent organic matrix material and at least one absorber material introduced, especially mixed, into the matrix material.
  • Embodiment 20 The photovoltaic element according to the preceding embodiment, wherein the matrix material comprises at least one varnish.
  • Embodiment 21 The photovoltaic element according to the preceding embodiment, wherein the varnish is a polyacrylate-polyester varnish.
  • Embodiment 22 The photovoltaic element according to any of the two preceding embodiments, wherein the varnish is applied by applying a coating composition, and wherein the coating composition comprises at least one polyester resin (A), at least one polyacrylate resin (B) and preferably at least one crosslinking agent, said cross!inking agent being selected from the group consisting of polyisocyanates, amide- and amine-formaldehyde resins, phenol resins, aldehyde resins and ketone resins, said crosslinking agent preferably being a
  • Embodiment 23 The photovoltaic element according to any of the four preceding embodiments, wherein the absorber material comprises at least one organic absorber material.
  • Embodiment 24 The photovoltaic element according to any of the five preceding embodiments, wherein the organic absorber materia! is selected from compounds comprising a benzotriazole group or a triazine group.
  • Embodiment 25 The photovoltaic element according to any of the preceding embodiments, wherein the longpass filter comprises at least two absorber materials introduced, especially mixed, into the matrix material, one absorber material being an absorber material comprising a triazine group, preferably an absorber material having the following structure
  • alkyl # is preferably a linear alkyl group, especially a linear alkyl group having 12 or 13 carbon atoms, and the other absorber material being preferably a compound of the following structure:
  • R and R bd are each independently selected from the group consisting of H, -alkyl, -OH, -alkylaryl, -alkyl heteryl, -cycloalky!, cycloheteroalkyl, alkeny!, aryl and -SO3H, and where R* 2 is selected from the group consisting of H, alkyl, aryl, heteroaryl, alkylaryl, alkyl heteroryl, alkenyl and alkynyl.
  • Embodiment 26 A process for producing a photovoltaic element for conversion of electromagnetic radiation to electrical energy, especially a photovoltaic element according to any of the preceding embodiments, by providing at least one first electrode, at least one n- semiconductive metal oxide, at least one dye for absorption of at least a portion of the electromagnetic radiation, at least one organic hole conductor material and at least one second electrode, especially by application to a substrate, the organic hole conductor material being selected such that it, in the photovoltaic element, has an absorption spectrum for the
  • electromagnetic radiation having an absorption maximum in an ultraviolet or blue spectral region and then, toward higher wavelengths, having an absorption edge declining with the wavelength of the electromagnetic radiation and having a characteristic wavelength ⁇ ⁇ ⁇ _, a decadic absorbance of the hole conductor material at the wavelength AHTL within the declining absorption edge being 0.3, and by further providing at least one longpass filter, especially likewise by application to the substrate, said iongpass filter having a transmission edge rising with the wavelength of the electromagnetic radiation and having a characteristic wavelength ALP, a transmission of the Iongpass filter at ALP being 50% of a maximum transmission of the
  • Iongpass filter where AHTL - 30 nm ⁇ ALP ⁇ AHTL + 30 nm.
  • Embodiment 27 A process for selecting a Iongpass filter for use in a photovoltaic element for conversion of electromagnetic radiation to electrical energy, said photovoltaic element having at least one first electrode, at least one n-semiconductive metal oxide, at least one dye for absorption of at least a portion of the electromagnetic radiation, at least one organic hole conductor material and at least one second electrode, said process comprising the following steps:
  • the characteristic wavelength being within a declining absorption edge in which an absorption of the organic hole conductor material in the photovoltaic element declines proceeding from an absorption maximum in an ultraviolet or blue spectral range, a decadic absorbance of the hole conductor material at the characteristic wavelength AHTL being 0.3,
  • the Iongpass filter such that the Iongpass filter has a transmission edge rising with the wavelength of the electromagnetic radiation and having a characteristic wavelength ALP, a transmission of the Iongpass filter at ALP being 50% of a maximum transmission of the Iongpass filter, where AHTL - 30 nm ⁇ ALP ⁇ AHTL + 30 nm.
  • figure 1 a layer structure of a preferred photovoltaic element
  • figure 2 an energy level scheme of a preferred photovoltaic element
  • figure 3 a schematic profile of an absorption edge of a typical hole conductor material
  • figure 4 a schematic profile of a transmission curve of a typical Iongpass filter
  • figure 5 an absorbance spectrum of the spiro-MeOTAD hole conductor material
  • figure 6 an absorbance spectrum of the ID 504 dye
  • figure 7 transmission spectra of several longpass filters used figure 8 lifetime curves of various photovoltaic elements
  • figure 9 absorbance curves of substrates with various coatings
  • Example 1 Photovoltaic element with spiro-MeOTAD as organic p-semiconductor (without longpass filter, comparative example)
  • glass plates which had been coated with fluorine-doped tin oxide (FTO) as the first electrode (working electrode) and were of dimensions
  • a spray pyro!ysis process was used.
  • a TiO-2 paste which comprises T1O2 particles with a diameter of 25 nm in a terpineol/ethyfcellulose dispersion was spun on with a spin-coater at 4500 rpm and dried at 90°C for 30 min. After heating to 450°C for 45 min and a sintering step at 450°C for 30 minutes, a T1O2 layer thickness of approximately 1.8 ⁇ was obtained.
  • the sample was coo!ed to 80°C and immersed into an optional 5 mM solution of an additive 1D662 (obtainable, for example, according to example H below) for 12 h and subsequently into a 0.5 mM solution of a dye in dichloromethane for 1 h.
  • the dye used was the dye ID504 (obtainable, for example, according to example G below), although a multitude of other dyes are usable. More particularly, the dye can be matched to the particular end use and the wavelengths of electromagnetic radiation used.
  • the sample was subsequently rinsed with the same solvent and dried in a nitrogen stream.
  • the samples obtained in this way were subsequently dried at 40°C under reduced pressure.
  • a metal back electrode was applied as a second eiectrode by thermal metal vaporization under reduced pressure.
  • the metal used was Ag, which was vaporized at a rate of 3 A s at a pressure of approx. 2*10 _B mbar, so as to give a layer thickness of about 200 nm.
  • photovoltaic elements were first produced according to the above-described example 1 .
  • these photovoltaic elements were each provided with a longpass filter on the non-FTO-coated side of the glass substrate.
  • the longpass filters used in this case were commercially available glass longpass filters of the LCGG-X-2X2 type from LASER COMPONENTS GmbH in 82140 Olching, Germany, X designating the characteristic edge wavelength ALP, namely:
  • These filter types are UV filters with their own glass substrate, which has been placed directly onto the glass substrate of the photovoltaic element.
  • another structure which is possible in principle is one in which the longpass filter is integrated into the glass substrate, applied to the glass substrate as a coating or arranged at a distance from the glass substrate.
  • FIG. 1 shows, in a highly schematic section view, a photovoltaic element 110 in the form of a dye solar cell 112, which corresponds to the above-described inventive examples 2 to 5.
  • the photovoltaic element 110 comprises a substrate 114, for example a glass substrate. Other substrates are also usable, as described above.
  • a first electrode 116 which is also referred to as a working electrode and which is preferably transparent, as described above.
  • Applied to this first electrode 116 in turn has been an optical blocking layer 118 of at least one metal oxide, which is preferably nonporous and/or nonparticulate.
  • an n-semiconductive metal oxide 120 which has been sensitized with a dye 122.
  • the substrate 114 and the layers 1 16 to 120 applied thereto form, for example, a carrier element 124 for at least one layer of a solid organic p-semiconductor 126 applied thereto.
  • a second electrode 132 which is also referred to as the counterelectrode.
  • the layers shown in figure 1 together form a layer structure 134 which may optionally be shielded from an ambient atmosphere by an encapsulation 136, for example in order to fully or partly protect the layer structure 134 from oxygen and/or moisture.
  • One or both of the electrodes 116, 132 may, as indicated in figure 1 by the first electrode 1 16, be conducted out of the encapsulation 136 in order to be able to provide one or more contact areas outside the encapsulation 136.
  • the layer structure 134 described corresponds, for example, to example 1 described above.
  • the photovoltaic element 110 according to figure 1 on a side of the substrate 114 remote from the first electrode 116, has at least one longpass filter 128 through which electromagnetic radiation 130 has to pass before it can enter the layer structure 134 through the substrate 114.
  • Figure 2 shows, by way of example, in highly schematic form, an energy level diagram of the photovoltaic element 110, for example according to figure 1.
  • This shows the Fermi levels 138 of the first electrode 116 and of the second electrode 132, and the HOMOs (Highest Occupied Molecular Orbita!s) 140 and the LUMOs (Lowest Unoccupied Molecular Orbitals) of layers 1 18/120 (which may comprise the same material, for example T1O2) of the dye 122 (shown by way of example with a HOMO level of 5.7eV) and of the p-semiconductor 126 (also referred to as HTL, Hole Transport Layer).
  • the materials specified by way of example for the first electrode 116 and the second electrode 132 are FTO (fluorine-doped tin oxide) and silver.
  • Figures 3 and 4 explain the above-described definitions of the characteristic wavelengths A H TL and ALP.
  • figure 3 shows, in schematic form, an absorbance curve measured according to the description above for the hole conductor material, as a function of wavelength ⁇ .
  • Figure 4 shows a transmission T of the longpass filter, likewise as a function of wavelength A.
  • the characteristic wavelength AHTL is that wavelength within a declining absorption edge at which the absorbance is exactly 0.3.
  • the range ⁇ ⁇ ⁇ _ refers to the range of AHTL ⁇ 30 nm.
  • Figure 4 shows the edge of a typical longpass filter.
  • the characteristic wavelength ALP of the longpass filter is that wavelength at which the transmission is 50% of a maximum transmission of the longpass filter.
  • Preference is given to longpass filters with a particularly steep absorption edge, in order that a maximum number of photons can be blocked on the short-wave side and transmitted to the long-wave side. The steepness of these longpass filters is calculated from the two wavelengths A L p,biock and ALP.trans.
  • a L p,biock here is that wavelength at which, according to the specification, the optical density for the blocking effect (blocking OD) ends, more particularly goes below the value of 2 with rising wavelength.
  • a L p,trans is that wavelength at which, according to the specification of the longpass filter, the transmission of the longpass filter begins and at which the transmission, for example, exceeds 95% of a maximum transmission of the longpass filter. If, for example, the minimum transmission is 0.5% and the maximum transmission 85%, ALP.biock can be defined as that wavelength at which the
  • the steepness SLP is calculated by the formula specified above. Particular preference is given to inorganic longpass filters for which SLP does not exceed the value of 1 eV. More preferably, SLP ⁇ 0.8 eV. However, it is also generally possible to use specific organic UV and blue absorbers in organic binders within the mass concentration range from 0.1 % to 15%. The steepness of these absorbers is calculated analogously. The steepness of these organic absorbers should preferably not be less than the value of 0.3 eV.
  • Figures 5 and 6 show absorbance spectra for the spiro-MeOTAD hole conductor material (figure 5) and for the ID 504 dye (figure 6).
  • the plot in each case is of the absorbance as defined above, which is measured according to the above-described test method as a function of wavelength A in nm.
  • Figure 5 shows that the characteristic wavelength AHTL of the spiro- MeOTAD hole conductor is approximately 420 nm.
  • Figure 7 shows transmission curves of the above-described longpass filters of working examples 2 to 5.
  • Figure 8 shows various lifetimes of the components.
  • the plot is of efficiency ⁇ , reported in %, as a function of irradiation hours at irradiation with one sun.
  • Characteristic 218 denotes the lifetime measurement for components according to the abovementioned example 1 , i.e. of a
  • Reference numeral 224 denotes a lifetime
  • the lifetime measurements show clearly that the photovoltaic elements configured in accordance with the invention have a distinct increase in lifetime compared to photovoltaic elements not configured in accordance with the invention.
  • This fact shows that the conditions specified, for the wavelength A L p, are still configured such that the longpass filters or edge filters transmit enough photons in the long-wave range to cover the absorbance spectrum of the dye according to figure 6.
  • the characteristic wavelength ALP should be selected such that the absorbance spectrum of the hole conductor shown in figure 5 is well below the characteristic wavelength ALP in order to at least substantially avoid absorption leading to degradation by the hole conductor.
  • Example 6 Method for production of the UV/VIS protective varnish layers:
  • UV protection layers were first produced in the form of varnish layers on glass substrates.
  • the commercially available HS (high solids) clearcoat, scratch-resistant VOC from Glasurit was used. It likewise comprises the diluent and hardener components.
  • the varnish was applied by means of a spin coater at 1000 rpm to 25 mm ⁇ 25 mm front-side cell cover glasses for 30 sec. Subsequently, the cells were heat-treated at 60°C for 2 h.
  • Example 6.1 UV protection varnish comprising the UV absorbers Carboprotect and Tinuvin 400 (full UV)
  • samples were produced analogously to example 6, in which commercial UV absorbers were added to the varnish as the matrix material. Stirred into a mixture of: 2.5 g of clearcoat, 0.41 g of diluent and 1.25 g of hardener were in each case 78 mg or 39 mg of commercial UV absorber Carboprotect Xymara or Tinuvin 400.
  • Example 6.2 UV protection varnish comprising the UV absorber Carboprotect Xymara
  • the procedure was as in 6.1 , except that the UV absorber Tinuvin 400 was omitted.
  • Figure 9 shows absorbance curves of the samples produced as above, which were recorded analogously to the curves in figures 5 and 6.
  • Curve 910 denotes an absorbance measurement on cell glass without protection varnish.
  • Curve 912 denotes an absorbance measurement on a sample according to working example 6.2 above, i.e. a sample comprising a varnish matrix and Carboprotect Xymara.
  • Curve 914 denotes an absorbance measurement on a sample according to working example 6.1 above, i.e. a sample comprising a varnish matrix and the UV absorber materials Carboprotect Xymara and Tinuvin 400.
  • Figure 10 shows lifetime measurements on photovoltaic elements 110, with the above- described varnishes and UV absorber materials as the longpass filter 128.
  • the basis used was a photovoltaic element 110 according to the above-described example 1.
  • varnishes were applied as the longpass filter 128 to the side of the substrate 114 facing away from the organic layer structure in two of the photovoltaic elements 110, specifically a UV protection varnish comprising the UV absorbers Carboprotect and Tinuvin 400 (full UV) in one case (example 7.1, analogously to 6.1 above), and a UV protection varnish only comprising the UV absorber Carboprotect Xymara in another case (example 7.2, analogously to example 6.2 above).
  • FIG. 10 Plotted on the horizontal axis is the exposure time for exposure with 1 sun in hours. Plotted on the vertical axis is, analogously to figure 8, the efficiency ⁇ in percent, which has been normalized here arbitrarily to the maximum value of the curve as 100 percent.
  • the curve 1010 denotes the course against time of the lifetime of a photovoltaic element 110 without longpass filter, i.e. entirely without protective varnish.
  • Curve 1012 denotes the course against time of the efficiency in a photovoltaic element 110 according to working example 7.2 above, i.e. of a sample comprising a varnish matrix and Carboprotect Xymara.
  • Curve 1014 denotes a lifetime measurement on a sample according to working example 7.1 above, i.e. a photovoltaic element 110 comprising a varnish matrix and the UV absorber materials Carboprotect Xymara and Tinuvin 400. It is clearly evident from these curves that the use of the UV protection varnish comprising one UV absorber component (curve 1012) or even comprising two absorber components (curve 1014) can distinctly enhance the lifetime of the photovoltaic elements 110.
  • the compounds of the formula I can be prepared via the sequence of synthesis steps shown above in synthesis route I.
  • steps (I-R1) to (I-R3) the reactants can be coupled, for example, by Ullmann reaction with copper as a catalyst or under palladium catalysis.
  • the compounds of the formula I can be prepared via the sequence of synthesis steps shown above in synthesis route II.
  • steps (II-R1) to (II-R3) the reactants can be coupled, as also in synthesis route I, for example, by Ullmann reaction with copper as a catalyst or under palladium catalysis.
  • N 4 ,N 4 '-Bis(4-methoxypheny[)bipheny[-4,4'-diamine (product from synthesis step I-R1; 0.4 g; 1.0 mmol) and product from synthesis step I-R2 ( .0 g; 2.2 mmol) were added under a nitrogen atmosphere to a solution of t-BuONa (0.32 g; 3.3 mmol) in o-xylene (25 ml).
  • the solid was purified by column chromatography (eluent: 20% ethyl acetate/hexane), followed by a precipitation with THF/methanol and an activated carbon purification. After removing the solvent, the product was obtained as a pale yellow solid (1.0 g, yield: 86%).
  • t-BuONa (686 mg; 7.14 mmol) was heated at 100°C under reduced pressure, then the reaction flask was purged with nitrogen and allowed to cool to room temperature. 2,7-Dibromo-9,9- dimethyifluorene (420 mg; 1.19 mmol), toluene (40 ml) and Pd[P( t Bu) 3 ]2 (20 mg; 0.0714 mmol) were then added, and the reaction mixture was stirred at room temperature for 15 minutes. Subsequently, ⁇ , ⁇ '- ⁇ -thmethoxytriphenylbenzidine (1.5 g; 1.27 mmol) was added to the reaction mixture which was stirred at 120°C for 5 hours.
  • the mixture was filtered through a Celite®/MgS04 mixture and washed with toluene.
  • the crude product was purified twice by column chromatography (e!uent: 30% ethyl acetate/hexane) and, after twice reprecipitating from THF/methanol, a pale yellow solid was obtained (200 mg, yield: 13%).
  • Step 1
  • N ,N '-Bis(4-methoxyphenyl)biphenyl-4 1 4'-diamine (0.60 g; 1.5 mmol) and product from the preceding synthesis step I-R2 (1.89 g; 3.5 mmol) were added under nitrogen to a solution of t- BuONa (0.48 g; 5.0 mmol) in 30 ml of o-xylene.
  • Palladium acetate (0.04 g; 0.18 mmol) and P(t- Bu)3 in a 10% by weight solution in hexane (0.62 ml; 0.21 mmol) were added, and the reaction mixture was stirred at 125°C for 6 hours.
  • reaction mixture was admixed with water and the product was precipitated from hexane.
  • aqueous phase was additionally extracted with ethyl acetate.
  • the organic phase and the precipitated solid which had been filtered off were combined and purified by column
  • Step b
  • Step c 22.4 g (23 mmol) of step b and 73 g (1.3 mol) of KOH were introduced into 200 ml of 2-methyi- 2-butanol and the mixture was stirred at reflux for 17 h.
  • reaction mixture was added to 1 I of ice-water + 50 ml of concentrated acetic acid.
  • the orange-brown solid was filtered through a frit and washed with water.
  • the solid was dissolved in dichloromethane and extracted with demineralized water. 10 ml of concentrated acetic acid were added to the organic phase, which was stirred at RT. The solvent was removed from the solution. The residue was extracted by stirring with methanol at RT for 30 min, filtered with suction through a frit and dried at 55°C in a vacuum drying cabinet. This afforded 17.5 g of a violet solid, which corresponds to a yield of 94%.
  • Step d The product was used unpurified in the next step.
  • reaction mixture was added to 1 I of demineralized water.
  • the precipitate was filtered through a frit, washed with water and dried at 70°C in a vacuum drying cabinet.
  • ID662 was prepared by reacting the corresponding commercially available hydroxamic acid [2- (4-butoxyphenyl)-N-hydroxyacetamide] with sodium hydroxide.

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Abstract

Elément photovoltaïque (110) pour convertir le rayonnement électromagnétique (130) en énergie électrique, qui comporte au moins une première électrode (116), au moins un oxyde métallique semi-conducteur de type n (120), au moins un colorant (112) destiné à absorber au moins une partie du rayonnement électromagnétique (130), au moins un matériau conducteur organique à trous (126) et au moins une seconde électrode 132. Le matériau conducteur organique à trous (126) dudit élément photovoltaïque (110) possède un spectre d'absorption pour le rayonnement électromagnétique (130) qui présente un maximum d'absorption dans une zone spectrale ultraviolette ou bleue, puis, vers des longueurs d'onde plus importantes, une discontinuité d'absorption diminuant avec la longueur d'onde du rayonnement électromagnétique (130) et présentant une longueur d'onde caractéristique ?HTL. Une absorbance décadique du matériau conducteur à trous (126) à une longueur d'onde ?HTL dans la discontinuité d'absorption décroissante est de 0,3. Ledit élément photovoltaïque comporte en outre au moins un filtre passe-long (128). Le filtre passe-long (128) présente une discontinuité de transmission qui augmente avec la longueur d'onde du rayonnement électromagnétique (130) et qui présente une longueur d'onde caractéristique ?LP, une transmission du filtre passe-long (128) à ?LP correspondant à 50% d'une transmission maximale du filtre passe-long (128), et ?LP répondant à la formule suivante : ?HTL - 30 nm = ?LP = ?HTL + 30 nm.
PCT/IB2012/052074 2011-05-02 2012-04-26 Élément photovoltaïque à la stabilité à long terme accrue WO2012150529A1 (fr)

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CN201280032856.6A CN103636022A (zh) 2011-05-02 2012-04-26 具有提高的长期稳定性的光伏元件
JP2014508899A JP2014520386A (ja) 2011-05-02 2012-04-26 長期安定性が向上した光起電力素子
AU2012251447A AU2012251447A1 (en) 2011-05-02 2012-04-26 Photovoltaic element with increased long-term stability
KR1020137031886A KR20140041513A (ko) 2011-05-02 2012-04-26 장기 안정성이 증가된 광기전력 소자
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CN111430549A (zh) * 2020-03-24 2020-07-17 杭州纤纳光电科技有限公司 一种钙钛矿太阳能电池及其制备方法
CN111430550A (zh) * 2020-03-26 2020-07-17 杭州纤纳光电科技有限公司 带紫外保护层的钙钛矿电池组件及其制备方法

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CN114556604A (zh) * 2019-11-18 2022-05-27 松下知识产权经营株式会社 太阳能电池
US10964899B1 (en) 2020-11-05 2021-03-30 King Abdulaziz University Hybrid junction solar light sensitive device

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