WO2012150153A1 - Procédé de production de silicium - Google Patents

Procédé de production de silicium Download PDF

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Publication number
WO2012150153A1
WO2012150153A1 PCT/EP2012/057501 EP2012057501W WO2012150153A1 WO 2012150153 A1 WO2012150153 A1 WO 2012150153A1 EP 2012057501 W EP2012057501 W EP 2012057501W WO 2012150153 A1 WO2012150153 A1 WO 2012150153A1
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WO
WIPO (PCT)
Prior art keywords
silicon
carrier body
tubular
heated
temperature
Prior art date
Application number
PCT/EP2012/057501
Other languages
German (de)
English (en)
Inventor
Markus Fuchs
Paul Fuchs
Günter Seidel
Original Assignee
Wacker Chemie Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie Ag filed Critical Wacker Chemie Ag
Publication of WO2012150153A1 publication Critical patent/WO2012150153A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/30—Loose or shaped packing elements, e.g. Raschig rings or Berl saddles, for pouring into the apparatus for mass or heat transfer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/02—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
    • B01J8/0207—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds the fluid flow within the bed being predominantly horizontal
    • B01J8/0221—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds the fluid flow within the bed being predominantly horizontal in a cylindrical shaped bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/02—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
    • B01J8/0285—Heating or cooling the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/02—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
    • B01J8/0292—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds with stationary packing material in the bed, e.g. bricks, wire rings, baffles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00407—Controlling the temperature using electric heating or cooling elements outside the reactor bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00415—Controlling the temperature using electric heating or cooling elements electric resistance heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00513—Controlling the temperature using inert heat absorbing solids in the bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0209—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0272—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/30—Details relating to random packing elements
    • B01J2219/304—Composition or microstructure of the elements
    • B01J2219/30408—Metal

Definitions

  • the invention relates to a process for the preparation of silicon.
  • Polycrystalline silicon serves as a starting material in the production of monocrystalline silicon by means of crucible pulling (Czochralski or CZ process) or by zone melting (floatzone or FZ process). This monocrystalline silicon is cut into slices (wafers) and used for a variety of mechanical, chemical and chemo-mechanical processes in the semiconductor industry for the manufacture of electronic components (chips).
  • polycrystalline silicon is increasingly required for the production of monocrystalline or multicrystalline silicon by means of drawing or casting processes, this monocrystalline or multicrystalline silicon being used to produce solar cells for photovoltaics.
  • the polycrystalline silicon often called polysilicon for short, is usually produced by means of the Siemens process.
  • Siemens process thin filament rods of silicon are heated in a bell-shaped reactor ("Siemens reactor") by direct current passage, and a reaction gas containing a silicon-containing component and hydrogen is introduced.
  • the filament rods are usually placed vertically in electrodes located at the bottom of the reactor, via which the connection to the power supply takes place.
  • Two filament rods each are coupled via a horizontal bridge (also made of silicon) and form a carrier body for the silicon deposition.
  • the bridging coupling produces the typical U-shape of the support bodies, which are also called thin rods.
  • DE 25 33 455 A1 describes a method for the production of silicon by thermal decomposition of a gaseous silicon source and deposition of the silicon on heated deposition rods.
  • the deposition rods preferably made of graphite with a quartz sheath
  • the silicon is collected in liquid form.
  • a disadvantage of this method is that make power supply, contacting and power control as extremely difficult and the process is prone to failure.
  • WO 84/00156 A1 discloses another method for producing molten silicon by thermally reacting a gaseous composition in a reaction chamber, wherein the interior of the reactor chamber is maintained at a first temperature range above the melting point of silicon with a uniform flow of the gaseous composition, wherein unreacted Gas and exhaust gas and molten silicon are discharged from the reactor chamber.
  • a separation body in this process an elongated hollow body, such as a hollow cylinder or a tubular body is provided. The depositing silicon drains off to the reactor bottom and is collected.
  • the heat is supplied indirectly via a leading around the outer periphery of the support body resistance heater.
  • the carrier body consists of graphite, which reacts superficially with the depositing silicon to silicon carbide.
  • the silicon melt is endangered by impurities with carbon or by other foreign substances originating from the graphite.
  • a silicon is deposited by thermal decomposition of a silicon-containing compound on the inner walls of a tubular, multi-walled reactor in solid form and subsequently melted by an increase in temperature at the reactor walls.
  • the deposition of the silicon in solid form allows lower process temperatures and in the case of using, for example, trichlorosilane lower hydrogen partial pressures for the reduction, so that also chlorosilanes can be economically implemented.
  • quartz silicon carbide or graphite are used. As a result, however, contamination of the silicon produced by foreign substances from the reactor wall remains a problem. Quartz is particularly unfavorable as a wall material because it softens at the deposition temperatures and loses its dimensional stability.
  • DE 4127819 AI relates to a method for depositing polycrystalline silicon on a tubular support body by thermal decomposition of a silicon-containing, gaseous compound and subsequent melting of the grown silicon layer, characterized in that the support body is heated by direct passage of current.
  • a device for depositing polycrystalline silicon on a tubular support body by thermal decomposition of a silicon-containing, gaseous compound and subsequent melting of the grown silicon layer characterized by a support body of silicon which can be heated by direct current passage.
  • WO 2008/134568 A2 describes the use of deposition plates or spiral bodies for the deposition of silicon. The separation bodies are heated by passage of current. After depositing silicon, the temperature of the precipitating bodies is raised above the melting point of silicon to produce liquid silicon.
  • the carrier bodies are heated by passage of current and serve in each case for depositing solid silicon, which is later melted off by further increase in the passage of current through the carrier bodies.
  • the carrier bodies have to be electrically conductive, certain materials are not suitable for the carrier bodies. This makes the procedures inflexible.
  • the active separation surface (inner surface of the tubular support body, surfaces of plates or spirals) is not optimally designed.
  • the production of carrier spirals is complex and their use is problematic, since it has been shown that they can break easily.
  • the object of the invention was to avoid the above-mentioned disadvantages of the prior art.
  • the object of the invention is achieved by a method for the production of silicon, comprising depositing silicon in a reactor on a multiplicity of random packings (2) which are located inside a tubular, heated carrier body (1) containing the fillers (2 ) is heated to a temperature at which silicon is deposited on the packing (2) by thermal decomposition of a silicon-containing gas; and then heating the tubular carrier body (1) such that the filling bodies (2) are heated to a temperature which corresponds at least to the melting temperature of silicon, thereby melting deposited silicon from the filling bodies (2) and into a receiving device ( 6) for liquid silicon.
  • a device for producing silicon comprising a tubular, alschirba- ren carrier body (1), wherein within the tube packing (2), comprising a material selected from the group consisting of graphite, Sic, Si3N and Quartz, at least one supply line (7) for reaction gas and at least one exhaust pipe, two electrical connection elements (3) to heat the carrier body (1) to accomplish, and a derivative (5), suitable for liquid silicon from the device in to remove a receiving device (6).
  • the tubular carrier body is preferably heated by direct passage of current.
  • a power supply of the carrier body is provided.
  • the carrier body must in this case consist of a conductive material.
  • the carrier body for the deposition of silicon on the packing is heated to a temperature of 1300 to 1450 ° C.
  • a temperature of about 1050 to Reaches 1150 ° C, at which silicon is deposited on the packing is heated to a temperature of 1300 to 1450 ° C.
  • the fillers themselves are not heated by passage of current.
  • the heating of the packing to the required deposition temperature is effected by a heat radiation emanating from the carrier body and by convection.
  • the fillers may consist of both conductive and non-conductive material.
  • silicon is deposited on the packing.
  • liquid silicon can be obtained and removed by means of a receiving device for further processing.
  • a device which transports the liquid molten silicon from the interior of the reactor to the receiving device.
  • the system is preferably slightly inclined.
  • This device may be, for example, a quartz trough.
  • FIG. 1 shows the schematic structure of a device suitable for carrying out the method.
  • Carrier body 1 shows the tubular carrier body.
  • Carrier body 1 comprises a derivative 5 for liquid silicon.
  • FIG. 2 shows a multiplicity of random packings which are located inside the carrier body 1.
  • 3 shows a power supply which heats the carrier body 1 by direct passage of current.
  • 8 shows the reactor wall or reactor shell.
  • FIG. 6 shows a device for receiving the liquid silicon
  • FIG. 7 shows a gas feed line.
  • Carrier body 1 is lined in the lower part 9 with quartz glass.
  • the core of the system forms according to FIG. 1, a tubular carrier body. 1
  • the outer walls of the separation plant are preferably made of double-walled stainless steel and can be cooled, for example, with water.
  • the bottom of the device 6 for receiving the liquid silicon is also cooled with water.
  • the carrier body 1 is provided on its inner surface with a coating of silver in order to minimize energy losses due to heat radiation during operation of the system.
  • the supplied electric current can be uniformly brought to the carrier body 1 by means of a silver ring.
  • the process begins with the deposition of silicon on the packing 2 within the tubular carrier body 1.
  • the carrier body 1 heats the filling bodies 2 in the interior to the deposition temperature.
  • the silicon-containing reaction gas supplied via supply line 7 passes over the filling bodies 2 and builds up a solid silicon layer on the surfaces of the filling bodies 2 within the tubular carrier body 1. By supplying a purge gas, it can be prevented that silicon is deposited outside the deposition region.
  • Support body 1 is heated to a high temperature (about 1300-1450 ° C) for deposition of silicon on the filling bodies 2.
  • the carrier body 1 is preferably made of graphite or CFC (carbon fiber reinforced carbon), a composite consisting of a C-fiber matrix, which is fed with carbon whose surface is preferably coated with SiC.
  • the carrier body 1 is preferably heated by a direct current supply to about 1300-1450 ° C from a DC power supply, so that the inner packing 2 are heated to about 1050-1150 ° C by heat radiation and convection. With increasing deposition, the temperature of support body 1 is lowered in order to achieve optimum deposition rates also on the outer packing 2.
  • the deposition of silicon can take place until the gas flow is too low and the differential pressure between inlet and outlet of the gas becomes too high.
  • the deposition is stopped by inhibiting the supply of the reaction gas.
  • the gas inlet is stopped and the temperature of the carrier body is increased such that silicon melts away from the packing and drains off at the bottom of the carrier body 1 via discharge 5 into the intended receiving device 6, without being too contaminated by the heating tube.
  • the tubular design of the carrier body 1 ensures that any existing, local temperature differences on the separation surfaces of the packing 2 due to the radial heat radiation compensate rapidly, so that the silicon melts at the same rates.
  • Lead 5 is preferably a quartz channel to prevent contamination of the liquid silicon as it drains off.
  • Receiving device 6 is preferably a collecting trough in the form of a high-walled shell.
  • Fillers 2 may be fragments or custom molded parts made of graphite, SiC, Si 3 N or quartz-coated molded parts of the aforementioned materials or may consist entirely of quartz.
  • the effluent silicon is, for example, dripped off in a quartz glass sieve, poured into molds or removed in liquid form. It is particularly advantageous to remove the silicon as molten as possible to the destination of its further processing. When so much or nearly as much material has been melted off as previously grown, the melting phase of the process is terminated. For this purpose, the electric current flow of the power supply 3 is throttled. Briefly dripping silicon falls into the drip pan. 6
  • the next deposition phase begins with the introduction of reaction gas.
  • the deposition and melting of silicon are repeated periodically in this way. Particularly advantageous is the simultaneous operation of several such deposition systems.
  • reaction gas passes via the supply line 7 directed into the inner reactor space.
  • reaction gases and unreacted reaction gas leave the reactor space through an exhaust pipe 10.
  • the hydrogen is preferably introduced via a separate feed line into the reactor interior.
  • the invention has a number of advantages over the prior art.
  • the fillers, on which silicon is deposited can thus consist of both conductive and non-conductive material.
  • the fillers are relatively easy to manufacture.
  • the filling may comprise broken granules or separately prepared fillers (e.g., high surface area tubing) of quartz, SiC or Si 3 N.
  • the filling is preferably poured into the tubular carrier body made of graphite or CFC.
  • the assembly of the support body is not a great deal of effort.
  • the internals of the reactor as the tubular support body are very robust.
  • the filling can be reused very often, so it has a long service life, since the filling can practically not be de- fect.
  • the reactor is preferably placed horizontally with a slight slope towards the outflow of silicon. As a result, there is little contact between the liquid silicon and the packing during defrosting and draining. This leads to a comparatively low contamination of the silicon.
  • the inner side 9 of at least the lower part of the tubular carrier body is preferably lined with a quartz glass. This reduces the contamination of the silicon as it drains off.
  • Fillers are only on the inside 9 made of quartz glass. Above this, the filler to the heating tube at a distance of 1 mm can be up to about 20 mm

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Silicon Compounds (AREA)

Abstract

L'invention concerne un procédé de production de silicium comprenant les étapes suivantes consistant à : déposer du silicium, dans un réacteur, sur une pluralité de corps de remplissage (2) se trouvant à l'intérieur d'un corps formant support (1) tubulaire et chauffé, qui chauffe les corps de remplissage (2) à une certaine température à laquelle le silicium se dépose sur les corps de remplissage (2) par décomposition thermique d'un gaz contenant du silicium ; à chauffer immédiatement après le corps formant support (1) tubulaire de manière à chauffer les corps de remplissage (2) à une certaine température correspondant au moins à la température de fusion du silicium, ce qui fait que le silicium déposé sur les corps de remplissage (2) fond et s'écoule dans un dispositif de réception (6) servant à recevoir le silicium liquide. L'invention concerne un dispositif de production de silicium comprenant un corps formant support (1) tubulaire et pouvant être chauffé. A l'intérieur de ce tube se trouvent des corps de remplissage (2) comprenant un matériau choisi dans le groupe constitué du graphite, du SiC, du Si3N et du quartz, au moins une conduite (7) pour le gaz réactionnel ainsi qu'au moins une conduite d'échappement, deux éléments de raccordement électrique (3) pour permettre le chauffage du corps formant support (1) et une dérivation (5) adaptée au transport du silicium liquide depuis le dispositif jusque dans un dispositif de réception (6).
PCT/EP2012/057501 2011-05-04 2012-04-25 Procédé de production de silicium WO2012150153A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201110075215 DE102011075215A1 (de) 2011-05-04 2011-05-04 Verfahren zur Herstellung von Silicium
DE102011075215.3 2011-05-04

Publications (1)

Publication Number Publication Date
WO2012150153A1 true WO2012150153A1 (fr) 2012-11-08

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WO (1) WO2012150153A1 (fr)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2533455A1 (de) 1974-07-29 1976-02-12 Motorola Inc Verfahren und vorrichtung zur herstellung von silizium
US4265859A (en) 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
WO1984000156A1 (fr) 1982-06-22 1984-01-19 Harry Levin Dispositif et procede de production de silicium de purete elevee pour cellules solaires
US4547258A (en) * 1982-12-22 1985-10-15 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
US4710260A (en) * 1982-12-22 1987-12-01 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
DE4127819A1 (de) 1991-08-22 1993-02-25 Wacker Chemitronic Verfahren und vorrichtung zum periodischen abscheiden und aufschmelzen von silicium
EP1223145A1 (fr) * 2001-01-03 2002-07-17 Korea Research Institute Of Chemical Technology Procédé et dispositif de préparation de granules de polysilicium
US20070248521A1 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
WO2008134568A2 (fr) 2007-04-25 2008-11-06 Kagan Ceran Déposition d'un silicium de pureté élevée par interfaces gaz-solide ou gaz-liquide à aire spécifique élevée et récupération en phase liquide

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2533455A1 (de) 1974-07-29 1976-02-12 Motorola Inc Verfahren und vorrichtung zur herstellung von silizium
US4265859A (en) 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
WO1984000156A1 (fr) 1982-06-22 1984-01-19 Harry Levin Dispositif et procede de production de silicium de purete elevee pour cellules solaires
US4547258A (en) * 1982-12-22 1985-10-15 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
US4710260A (en) * 1982-12-22 1987-12-01 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
DE4127819A1 (de) 1991-08-22 1993-02-25 Wacker Chemitronic Verfahren und vorrichtung zum periodischen abscheiden und aufschmelzen von silicium
EP1223145A1 (fr) * 2001-01-03 2002-07-17 Korea Research Institute Of Chemical Technology Procédé et dispositif de préparation de granules de polysilicium
US20070248521A1 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
WO2008134568A2 (fr) 2007-04-25 2008-11-06 Kagan Ceran Déposition d'un silicium de pureté élevée par interfaces gaz-solide ou gaz-liquide à aire spécifique élevée et récupération en phase liquide

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Publication number Publication date
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