WO2012145929A1 - 可显现图像的薄膜太阳能电池及制造方法 - Google Patents

可显现图像的薄膜太阳能电池及制造方法 Download PDF

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Publication number
WO2012145929A1
WO2012145929A1 PCT/CN2011/073561 CN2011073561W WO2012145929A1 WO 2012145929 A1 WO2012145929 A1 WO 2012145929A1 CN 2011073561 W CN2011073561 W CN 2011073561W WO 2012145929 A1 WO2012145929 A1 WO 2012145929A1
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solar cell
thin film
film solar
layer
image
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PCT/CN2011/073561
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English (en)
French (fr)
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连水养
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Lien Shui-Yang
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Priority to PCT/CN2011/073561 priority Critical patent/WO2012145929A1/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0468PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the present invention relates to a thin film solar cell, and more particularly to a thin film solar cell capable of visualizing an image and a method of fabricating the same.
  • BACKGROUND OF THE INVENTION Due to global climate change, air pollution problems, and the shortage of resources, the possibility that solar power is one of the main sources of power supply has attracted increasing attention. This is also a rapid market for solar cells based on silicon wafers in recent years. The reason for the growth, however, the cost of silicon-based solar power generation technology is higher than that of traditional power generation. Therefore, the market is still limited to specific uses, so the world’s major research units are committed to Research on solar-related technologies, seeking to develop new substances, can reduce product costs and improve efficiency.
  • thin-film solar cells can be used as substrates in inexpensive glass, plastic, ceramics, graphite, metal sheets and the like.
  • the thickness of the film that can generate the voltage is only a few ⁇ m, compared to the fact that the silicon wafer must maintain a certain thickness, the material is used very little, and since the film can be used with a soft substrate, the application flexibility is large, therefore, it is known a thin film solar power Using a glass substrate, and commonly used in building windows, thereby producing the effect of power, thus saving a lot of electricity, and to effectively achieve the effect of saving energy and carbon. Looking at the above known structure is not difficult to find that there are still some shortcomings, the main reasons are as follows:
  • a primary object of the present invention is to solve the known art in that a thin film solar cell has a considerable degree of isolation of sunlight, and appears to have insufficient indoor lighting.
  • a secondary object of the present invention is to provide a thin film solar cell with an effect of visualizing an image to enhance its added value.
  • the technical feature of the present invention is to provide a thin film solar cell capable of displaying an image and a manufacturing method thereof.
  • the thin film solar cell includes a substrate and a reaction layer, and the substrate has light transmissivity.
  • the reaction layer comprises a film layer (pin layer) and a conductive film layer (AZO or Ag), and the reaction layer is formed on one end of the substrate. At the surface, the reaction layer partially removes the film layer and the conductive film layer by laser scribing. Through the above structure, the laser-scored portion is formed with a hollowed-out region, and the hollow region is combined with the non-penetrating laser portion to display the existing image. .
  • the manufacturing method steps are as follows: a, cleaning the surface, placing the thin film solar cell in deionized water to oscillate to clean the surface; b, drying the thin film, placing the cleaned thin film solar cell into the oven to remove surface moisture; c.
  • the efficacy of the present invention against the prior art is as follows:
  • the reaction layer of the thin film solar cell has a hollowed out area by laser scribing, and the transmittance is increased by the hollowed out area to provide application on the dawn.
  • the hollowed-out region of the reaction layer is combined with the portion that does not penetrate the laser to form an image, which is enhanced by the image of the thin film solar cell.
  • the present invention is a thin film solar cell and a manufacturing method thereof, wherein the thin film solar cell (10) comprises a substrate (11) and a reaction layer (12), the substrate (11) having light transmissivity and Made of a hard glass material or a soft plastic material, the reaction layer (12) comprises a thin film layer (pin layer) and a conductive film layer (AZO or Ag), and the reaction layer (12) is formed.
  • the manufacturing method of the present invention has the following steps: a. Cleaning the surface (10a), the thin film solar cell ( 10) Put in The sub-water is oscillated to clean the surface; b, the drying (10b), the cleaned thin film solar cell (10) is placed in the oven to remove the surface moisture; c, the glazing cover (10c), please cooperate with As shown in Fig.
  • the photomask (20) with the light-shielding pattern is flat on the thin film solar cell (10); d, laser scribing (10d), as shown in “Fig. 4", “Fig. 5", the film
  • the solar cell (10) is placed in a laser marking machine (30) with a laser marking machine (30) having a wavelength of 532 nanometers (nm), a maximum of 0.5 in meters (mm), and a power of 400 watts.
  • An image (122) of the reticle (20) can be displayed on the surface of the thin film solar cell (10) (as shown in "Fig. 1"), and a power generation test can be performed to obtain a chart as shown in "Fig. 6".
  • Voc is the open circuit voltage.
  • Jsc is the short-circuit current, FF is the fill factor, and Eff is the power generation efficiency, and the two-phase comparison does not affect the power generation effect.
  • the thin film solar cell ( The reaction layer (12) of 10) has a hollowed out area (121) by laser scribing, and its transmittance is increased by the hollowed out area (121) to provide application on the twilight.
  • Hollowing of the reaction layer (12) The region (121) is formed with an image (122) that is combined with the portion that does not penetrate the laser, and is visualized by the image (122) of the thin film solar cell (10), thereby increasing its added value.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Description

可显现图像的薄膜太阳能电池及制造方法 技术领域 本发明涉及一种薄膜太阳能电池, 尤指一种可显现图像的薄膜太阳能电 池及制造方法。 背景技术 由于全球气候变迁、 空气污染问题以及资源日趋短缺之故, 太阳能发电 故为动力供应主要来源之一的可能性, 已日益引起人们注目, 这也是近年以 硅晶片为主的太阳能电池市场快速成长的原因, 然而, 硅晶片为主的太阳能 发电技术其成本毕竟高出传统电力产生方式甚多, 因此目前市场仍只能局限 于特定用途, 也因此世界上主要的研究单位, 均致力于投入太阳能相关技术 的研究, 企求开发出新的物质, 能降低产品成本并提升效能, 其中, 薄膜式 太阳能电池由于可以使用在价格低廉的玻璃、 塑料、 陶瓷、 石墨, 金属片等 不同材料当基板来制造, 形成可产生电压的薄膜厚度仅需数 μηι, 相较于硅 晶片必须维持一定厚度而言, 材料使用非常少, 而且由于薄膜是可使用软性 基材, 应用弹性大, 因此, 已知的一种薄膜太阳能电池, 使用玻璃为基板, 并常见使用于大楼窗户, 藉此产生发电的效果, 进而节省大量的电费, 并有 效达到节能省碳的效果。 详观上述已知结构不难发觉其尚存有些许不足之处, 主要原因如下:
(一)、其薄膜太阳能电池利用阳光进行发电,所以有相当程度的隔离阳 光, 因此显得有室内釆光不足的情况, 使降低应用薄膜太阳能电池于窗户的 意愿。
(二)、 其薄膜太阳能电池应用于窗户时, 不具有显现图像的效果, 即无 法提高其附加价值。 发明内容 本发明的主要目的在于解决已知技术, 其薄膜太阳能电池有相当程度的 隔离阳光, 而显得有室内釆光不足的情况。 本发明的次要目的在于让薄膜太阳能电池具有显现图像的效果, 以提高 其附加价值。 经由以上可知, 为达上述目的, 本发明解决问题的技术特点在于提供一 种可显现图像的薄膜太阳能电池及制造方法, 其薄膜太阳能电池包括有一基 板与一反应层, 该基板具有透光性, 并可为一硬质的玻璃材质或为一软质的 塑料材质所制成, 该反应层包含有薄膜层 (p-i-n 层) 与导电膜层 (AZO 或 Ag ), 且反应层形成于基板的一端表面处, 又该反应层局部经由激光划线方 式切除薄膜层与导电膜层,通过上述结构,使受激光划线部分形成有镂空区, 并以镂空区与未穿透激光部分配合显现有图像。 其制造方法步骤如下: a、 清洁表面, 将薄膜太阳能电池置入去离子水 中进行震荡, 以便清洁其表面; b、 烘千, 将清洁后的薄膜太阳能电池置入 烘箱中, 以便去除表面水分; c、 贴光罩, 将具有遮光图样的光罩平贴于薄 膜太阳能电池; d、 激光划线, 将薄膜太阳能电池置于激光划线机中, 其激 光划线机的参数为波长为 532纳米 ( nm ) 、 间距为 0.5微米 ( mm ) , 且功 率为 400瓦特 (W ) , 并由光罩端面进行激光划线; e、 清洁表面, 将光罩 取下, 并经由去离子震荡而去除激光划线后的粉末残留, 即能于薄膜太阳能 电池表面显现出光罩的图像, 又经由发电量测试, 该激光划线后的薄膜太阳 能电池的效率仅有些许的下降, 并不影响其发电效果。 如上所述, 本发明对照先前技术的功效如下:
(一)、其薄膜太阳能电池的反应层由激光划线有镂空区,通过镂空区增 加其透光度, 以提供釆光上的应用。 (二)、该反应层的镂空区与未穿透激光的部分配合形成有图像,通过薄 膜太阳能电池的图像显现, 即能提高其附加价值。 附图说明 为本发明的立体图。 为本发明的步骤流程图。 为本发明的贴光罩的示意图 为本发明的激光划线示意图 (一)。 图 5 : 为本发明的激光划线示意图 (二)。 为本发明的发电效率曲线图 具体实施方式 为使本领域的技术人员对本发明的目的、 特征及功效能够有更进一步的 了解与认识, 以下请配合图式详述如后: 请先参阅 "图 Γ 与 "图 2" 所示, 本发明为一种可显现图像的薄膜太 阳能电池及制造方法, 其薄膜太阳能电池 ( 10) 包括有一基板 ( 11 ) 与一反 应层 ( 12), 该基板 ( 11 ) 具有透光性, 并可为一硬质的玻璃材质或为一软 质的塑料材质所制成, 该反应层 ( 12) 包含有薄膜层 (p-i-n层) 与导电膜层 ( AZO或 Ag ), 且反应层( 12 )形成于基板 ( 11 ) 的一端表面处, 又该反应 层 ( 12) 局部经由激光划线方式切除薄膜层与导电膜层, 通过上述结构, 使 受激光划线部分形成有镂空区 ( 121 ), 并以镂空区 ( 121 ) 与未穿透激光部 分配合显现有图像 ( 122)。 再请参阅 "图 2"所示, 本发明制造方法步骤如下: a、 清洁表面( 10a), 将薄膜太阳能电池 ( 10) 置入去离子水中进行震荡, 以便清洁其表面; b、 烘千 ( 10b), 将清洁后的薄膜太阳能电池 ( 10) 置入烘箱中, 以便去除表面 水分; c、 贴光罩( 10c), 请配合 "图 3" 所示, 将具有遮光图样的光罩(20) 平贴于薄膜太阳能电池( 10); d、 激光划线 ( 10d), 如 "图 4"、 "图 5" 所 示, 将薄膜太阳能电池( 10)置于激光划线机(30) 中, 其激光划线机(30) 的参数为波长为 532纳米 (nm) 、 间 巨为 0.5 啟米 (mm) , 且功率为 400 瓦特 (W) , 并由光罩 (20) 端面进行激光划线; e、 清洁表面 ( 10e), 将 光罩 (20)取下, 并经由去离子震荡而去除激光划线后的粉末残留, 即能于 薄膜太阳能电池( 10) 表面显现出光罩 (20) 的图像 ( 122) (如 "图 1" 所 示), 又经由发电量测试, 即能获得如 "图 6" 所示的图表, 该激光划线后的 薄膜太阳能电池( 10) 的效率仅有些许的下降, 其中, 图示内 Voc为开路电 压, Jsc为短路电流, FF为填充因子, Eff为发电效率, 两相比较并不影响其 发电效果。 通过上述具体实施例的结构, 本发明可得到下述的效益: (一)其薄膜太 阳能电池( 10)的反应层( 12)由激光划线有镂空区( 121 ),通过镂空区( 121 ) 增加其透光度, 以提供釆光上的应用。 (二)该反应层( 12 )的镂空区 ( 121 ) 与未穿透激光的部分配合形成有图像( 122), 通过薄膜太阳能电池( 10) 的 图像 ( 122) 显现, 即能提高其附加价值。

Claims

权 利 要 求 书
1. 一种可显现图像的薄膜太阳能电池, 所述薄膜太阳能电池 ( 10) 包括 有一基板( 11 ) 与一反应层 ( 12), 其特征在于:
所述反应层( 12) 包含有薄膜层与导电膜层, 且所述反应层( 12) 形成于基板 ( 11 ) 的一端表面处, 并且所述反应层 ( 12) 局部经由激 光划线方式切除薄膜层与导电膜层, 使所述反应层 ( 12) 受激光划线 部分形成有镂空区 ( 121 ), 并以镂空区 ( 121 )与未穿透激光部分配合 显现有图像。
2. 根据权利要求 1所述的可显现图像的薄膜太阳能电池, 其中, 所述基 板( 11 ) 具有透光性, 并为一硬质的玻璃材质所制成。
3. 根据权利要求 1所述的可显现图像的薄膜太阳能电池, 其中, 所述基 板( 11 ) 具有透光性, 并为一软质的塑料材质所制成。
4. 根据权利要求 1所述的可显现图像的薄膜太阳能电池, 其中, 激光划 线方式的激光波长为 532纳米, 激光间距为 0.5微米, 且激光功率为 400瓦特。
5. —种可显现图像的薄膜太阳能电池制造方法, 其步骤为:
a、 清洁表面 ( 10a), 将薄膜太阳能电池( 10) 置入去离子水中进 行震荡, 以便清洁其表面;
b、 烘千 ( 10b), 将清洁后的薄膜太阳能电池( 10) 置入烘箱中, 以便去除表面水分;
c、 贴光罩( 10c), 将具有遮光图样的光罩 (20)平贴于薄膜太阳 能电池 ( 10);
d、激光划线( 10d),将薄膜太阳能电池( 10)置于激光划线机(30) 中, 并由光罩 (20) 端面进行激光划线;
e、 清洁表面 ( 10e), 将光罩 (20)取下, 并经由去离子震荡而去 除激光划线后的粉末残留, 即能于薄膜太阳能电池 ( 10) 表面显现出 光罩 (20) 的图像( 122)。
6. 根据权利要求 5所述的可显现图像的薄膜太阳能电池制造方法,其中, 所述激光划线机(30) 的波长为 532纳米、 间距为 0.5微米、 功率为 400瓦特。
7. 根据权利要求 5所述的可显现图像的薄膜太阳能电池制造方法,其中, 所述薄膜太阳能电池 ( 10 ) 包括有一基板 ( 11 ) 与一反应层 ( 12 )。
8. 根据权利要求 7所述的可显现图像的薄膜太阳能电池制造方法,其中, 所述反应层 ( 12 ) 包含有薄膜层与导电膜层。
9. 根据权利要求 7所述的可显现图像的薄膜太阳能电池制造方法,其中, 所述基板( 11 ) 具有透光性, 并为一硬质的玻璃材质所制成。
10. 根据权利要求 7所述的可显现图像的薄膜太阳能电池制造方法,其中, 所述基板( 11 ) 具有透光性, 并为一软质的塑料材质所制成。
PCT/CN2011/073561 2011-04-29 2011-04-29 可显现图像的薄膜太阳能电池及制造方法 WO2012145929A1 (zh)

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