JP5926054B2 - 透明ガラス基材及びこのような基材を製造するための方法 - Google Patents
透明ガラス基材及びこのような基材を製造するための方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 165
- 239000011521 glass Substances 0.000 title claims description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 62
- 230000005855 radiation Effects 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 31
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 27
- 230000005540 biological transmission Effects 0.000 claims description 26
- 239000002253 acid Substances 0.000 claims description 20
- 238000005096 rolling process Methods 0.000 claims description 7
- 239000003929 acidic solution Substances 0.000 claims description 5
- 238000004049 embossing Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 76
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- 239000010409 thin film Substances 0.000 description 6
- 230000002745 absorbent Effects 0.000 description 5
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- 230000015572 biosynthetic process Effects 0.000 description 5
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
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- 230000001788 irregular Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
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- 239000005341 toughened glass Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010052128 Glare Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000005202 decontamination Methods 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/008—Other surface treatment of glass not in the form of fibres or filaments comprising a lixiviation step
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B11/00—Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
- C03B11/06—Construction of plunger or mould
- C03B11/08—Construction of plunger or mould for making solid articles, e.g. lenses
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B13/00—Rolling molten glass, i.e. where the molten glass is shaped by rolling
- C03B13/08—Rolling patterned sheets, e.g. sheets having a surface pattern
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S80/00—Details, accessories or component parts of solar heat collectors not provided for in groups F24S10/00-F24S70/00
- F24S80/50—Elements for transmitting incoming solar rays and preventing outgoing heat radiation; Transparent coverings
- F24S80/52—Elements for transmitting incoming solar rays and preventing outgoing heat radiation; Transparent coverings characterised by the material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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Description
・浮彫りの各特徴について、この特徴の厚さ/幅の比は0.1以上、好ましくは0.25以上である。
・600nmでの反射防止層の屈折率は1.3未満、好ましくはおよそ1.22〜1.23である。
・浮彫りの各特徴の厚さは10μm超、好ましくは100μm超である。
・反射防止層の厚さは30nm〜1μm、好ましくは80nm〜200nmである。
・浮彫りの特徴は基材の面に不規則に分布されている。
・浮彫りの特徴は連続している。
・浮彫りの特徴はゼロでない頂点半角を有する角錐又は円錐である。
・浮彫りの各特徴の底面は5mm以下の直径を有する円に内接している。
・浮彫りの特徴は溝又はリブである。
・浮彫りの特徴のいずれの頂点半角も70°未満、好ましくはおよそ25°〜50°である。
・反射防止層は、シリカで過飽和した酸性溶液を用いて処理された前記面側のガラス基材の表面部分である。
・反射防止層は、シリカの飽和点よりもおよそ0〜3mmol/L高い割合においてシリカで過飽和したフルオロケイ酸溶液を用いて処理された前記面側のガラス基材の表面部分である。
透明ガラス板の少なくとも一方の面上に、この面の主平面に対して浮彫りの複数の幾何学的特徴を含む模様を形成する工程であって、この模様によって、板を通って板と接触している下の素子の方へと進む放射線の透過が、模様がない点においてのみ異なる同一の板によって得られる透過よりも大きくなるようにされる工程、及び
ガラス板を少なくとも浮彫りの特徴を含む面側において、シリカで過飽和した酸性溶液中に浸漬させる工程
の連続する工程を含む方法である。
電池の前方電極を形成する特に透明な導電性酸化物(TCO)に基づく導電性透明層、
吸収剤層、及び
電池の後方電極を形成する導電層
の連続的な積層を含む。
・サン−ゴバン グラス社によって販売されるのと全く同一のガラス組成物「ALBARINO」から構成され、4mmの全く同一の厚さを有する基材1、101、201。
・標準的な太陽スペクトルに対応するモジュール10、110、210上の入射放射線のエネルギー分布。
・多結晶シリコンに基づく光電池を基準として考慮した、収集電子数と電池に到達した光子数の比に対応する入射放射線の波長の関数としての、光電池9、109、209の効率の評価。ただし、基材の模様付け及び基材上の反射防止層の存在による基材の透過特性の改善が基材上に入射する放射線の波長によって大きく左右されるのでない限り、他のタイプの光電池にこれらの結果を置き換えることができる。
Claims (13)
- その主平面(π)に対して浮彫りの複数の幾何学的特徴(5)によって形成される模様を備えた少なくとも一方の面(3)を含む透明ガラス基材(1)であり、この模様によって、基材を通る放射線の透過が、同一であるが模様がない基材を通る放射線の透過よりも大きくなるようにされた透明ガラス基材(1)であって、浮彫りの各特徴(5)について、この特徴(5)の厚さ(e5)/幅(l5)の比が0.1以上であり、前記面(3)はまた、空気の屈折率とガラスの屈折率の間の屈折率を有する反射防止層(7)を備え、反射防止層(7)は前記面(3)における透明ガラス基材(1)のガラス構造においてくり抜かれた多孔質の表面部分であり、この部分はシリカの骨格と空隙とを含むことを特徴とする、透明ガラス基材(1)。
- 600nmでの反射防止層(7)の屈折率が1.3未満であることを特徴とする、請求項1に記載の透明ガラス基材(1)。
- 浮彫りの各特徴(5)の厚さ(e5)が10μm超であることを特徴とする、請求項1又は2に記載の透明ガラス基材(1)。
- 反射防止層(7)の厚さ(e7)が30nm〜1μmであることを特徴とする、請求項1〜3のいずれか1項に記載の透明ガラス基材(1)。
- 浮彫りの特徴(5)が連続していることを特徴とする、請求項1〜4のいずれか1項に記載の透明ガラス基材(1)。
- 浮彫りの特徴(5)がゼロでない頂点半角を有する角錐又は円錐であることを特徴とする、請求項1〜5のいずれか1項に記載の透明ガラス基材(1)。
- 浮彫りの各特徴(5)の底面が5mm以下の直径を有する円に内接していることを特徴とする、請求項6に記載の透明ガラス基材(1)。
- 浮彫りの特徴が溝又はリブであることを特徴とする、請求項1〜5のいずれか1項に記載の透明ガラス基材(1)。
- 浮彫りの特徴(5)のいずれの頂点半角も70°未満であることを特徴とする、請求項6〜8のいずれか1項に記載の透明ガラス基材(1)。
- モジュール上に入射する放射線からのエネルギーを集めるためのモジュール(10)であって、請求項1〜9のいずれか1項に記載の透明ガラス基材(1)をモジュール(10)の前方基材として含み、浮彫りの特徴(5)及び反射防止層(7)を備えた透明ガラス基材(1)の面(3)がモジュールの前面であることを特徴とする、モジュール(10)。
- 透明ガラス基材(1)を製造するための方法であって、
透明ガラス板(2)の少なくとも一方の面(3)上に、この面(3)の主平面(π)に対して浮彫りの複数の幾何学的特徴(5)を含む模様を形成する工程であって、浮彫りの各特徴(5)について、この特徴(5)の厚さ(e5)/幅(l5)の比が0.1以上であり、この模様によって、板を通る放射線の透過が、同一であるが模様がない板を通る放射線の透過よりも大きくなるようにされる工程、及び
ガラス板(2)を少なくとも浮彫りの特徴(5)を含む面(3)側において、シリカで過飽和した酸性溶液中に浸漬させる工程
の連続する工程を含む、方法。 - 前記面(3)上の浮彫りの特徴(5)がガラス板(2)の圧延によって形成されることを特徴とする、請求項11に記載の方法。
- ガラス板(2)が浸漬される溶液が、シリカの飽和点よりも0〜3mmol/L高い割合においてシリカで過飽和したフルオロケイ酸溶液であることを特徴とする、請求項11又は12に記載の方法。
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FR0950422 | 2009-01-23 | ||
FR0950422A FR2941447B1 (fr) | 2009-01-23 | 2009-01-23 | Substrat en verre transparent et procede de fabrication d'un tel substrat. |
PCT/FR2010/050097 WO2010084290A1 (fr) | 2009-01-23 | 2010-01-22 | Substrat en verre transparent et procede de fabrication d'un tel substrat |
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JP2012515702A JP2012515702A (ja) | 2012-07-12 |
JP5926054B2 true JP5926054B2 (ja) | 2016-05-25 |
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EP (1) | EP2382165A1 (ja) |
JP (1) | JP5926054B2 (ja) |
KR (1) | KR101455448B1 (ja) |
CN (1) | CN102361833B (ja) |
EA (1) | EA027284B1 (ja) |
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WO (1) | WO2010084290A1 (ja) |
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FR2948230B1 (fr) | 2009-07-16 | 2011-10-21 | Saint Gobain | Plaque transparente texturee et procede de fabrication d'une telle plaque |
KR20110048406A (ko) * | 2009-11-02 | 2011-05-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
WO2012024676A2 (en) | 2010-08-20 | 2012-02-23 | First Solar, Inc. | Anti-reflective photovoltaic module |
CN103154319B (zh) * | 2010-10-06 | 2016-08-10 | 3M创新有限公司 | 具有基于纳米二氧化硅的涂层和阻挡层的抗反射制品 |
WO2012047422A1 (en) * | 2010-10-06 | 2012-04-12 | 3M Innovative Properties Company | Anti-reflective articles with nanosilica-based coatings |
CN102487095B (zh) * | 2010-12-02 | 2014-07-16 | 沙嫣 | 新型非晶硅薄膜电池组件及其制造方法 |
CN102674697B (zh) * | 2011-03-18 | 2014-04-02 | 北京市太阳能研究所有限公司 | 一种通过浸蚀制备减反射增透玻璃的方法 |
FR2978772B1 (fr) | 2011-08-01 | 2013-08-02 | Saint Gobain | Photobioreacteur muni d'un empilement de couches minces selectif. |
KR101325012B1 (ko) * | 2012-03-21 | 2013-11-04 | 삼성코닝정밀소재 주식회사 | 광전지 모듈용 커버기판 및 이를 구비한 광전지 모듈 |
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US9556055B2 (en) * | 2013-04-30 | 2017-01-31 | Corning Incorporated | Method for reducing glass-ceramic surface adhesion, and pre-form for the same |
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CN206022388U (zh) * | 2016-07-29 | 2017-03-15 | 上海比亚迪有限公司 | 一种太阳能电池组件 |
FR3068690B1 (fr) * | 2017-07-07 | 2019-08-02 | Saint-Gobain Glass France | Procede d'obtention d'un substrat de verre texture revetu d'un revetement de type sol-gel antireflet. |
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CN112108493B (zh) * | 2020-09-07 | 2023-12-05 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种光伏组件玻璃去除设备及去除方法 |
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EP0510191A4 (en) | 1990-10-25 | 1993-03-03 | Nippon Sheet Glass Co., Ltd. | Process for preparing silicon dioxide coating |
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CN102361833A (zh) | 2012-02-22 |
EA027284B1 (ru) | 2017-07-31 |
FR2941447A1 (fr) | 2010-07-30 |
CN102361833B (zh) | 2016-05-04 |
US20110281078A1 (en) | 2011-11-17 |
EP2382165A1 (fr) | 2011-11-02 |
WO2010084290A1 (fr) | 2010-07-29 |
KR101455448B1 (ko) | 2014-10-27 |
JP2012515702A (ja) | 2012-07-12 |
KR20110113189A (ko) | 2011-10-14 |
EA201170956A1 (ru) | 2012-03-30 |
US9340453B2 (en) | 2016-05-17 |
FR2941447B1 (fr) | 2012-04-06 |
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