CN101421852A - 带有图案显示功能的cis系薄膜太阳能电池模块及其制造方法 - Google Patents

带有图案显示功能的cis系薄膜太阳能电池模块及其制造方法 Download PDF

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CN101421852A
CN101421852A CNA2007800137799A CN200780013779A CN101421852A CN 101421852 A CN101421852 A CN 101421852A CN A2007800137799 A CNA2007800137799 A CN A2007800137799A CN 200780013779 A CN200780013779 A CN 200780013779A CN 101421852 A CN101421852 A CN 101421852A
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冈泽忠
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Showa Shell Sekiyu KK
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Abstract

用简单的制造工序,以低成本通过显示花样图案等而增强美感并获得广告宣传效果,并且不降低模块的可靠性和转换效率。将切除了诸如花样之类的显示图案的显示图案树脂薄膜F插入CIS系薄膜太阳能电池子模块2与发挥粘合剂作用的交联EVA树脂薄膜3之间,通过薄膜F在薄膜太阳能电池1的表面显示图案P,同时通过前述EVA树脂薄膜3保持前述子模块2与玻璃盖板4和前述树脂薄膜F的粘合力。不存在薄膜F的区域F1显示模块原有的黑色,而存在薄膜F的区域显示与模块原有颜色不同的灰色。

Description

带有图案显示功能的CIS系薄膜太阳能电池模块及其制造方法
技术领域
本发明涉及带有图案显示功能的CIS系薄膜太阳能电池模块,其可以显示文字、画、图样等图案。
背景技术
在Si系太阳能电池中,已经有人提出了得到加入图样的薄膜太阳能电池(例如,参照专利文献1)。前述加入图样的Si系薄膜太阳能电池,在由从受光面侧起依次层压透光性的绝缘基板、透明导电膜、光电转换层和背面电极层所形成的层压体构成的薄膜太阳能电池中,为了使显示图样浮现(能够看见),制成下述结构:在想要显示的区域和除此以外的区域中改变前述绝缘基板或者透明导电膜的至少一个的浊度。改变浊度的方法有化学蚀刻方法和机械研磨方法。前一种方法是通过在绝缘基板或透明导电膜上形成图样形成用掩模并蚀刻,在掩模部分和非掩模部分改变浊度的方法,而后一种方法是在绝缘基板或透明导电膜上使用图样形成用金属等的掩模,通过喷砂处理等,在掩模部分和非掩模部分改变浊度的方法。然而,为了进行前述图样形成处理,前述加入图样的Si系薄膜太阳能电池需要多个复杂工序,因此导致成本增高,并且能量转换效率降低。
本申请人先前申请的易再利用的CIS系薄膜太阳能电池模块是一种在形成于玻璃基板上的CIS系薄膜太阳能电池器件与玻璃盖板之间,作为粘合剂插入经由加热而交联的乙烯-乙酸乙烯酯(EVA)等树脂,从而将玻璃盖板贴合(粘合)在CIS系薄膜太阳能电池器件上的结构,为了将上述CIS系薄膜太阳能电池模块制成再利用容易、各构成部件容易分离的结构,采用将非粘合性片材插入到前述CIS系薄膜太阳能电池器件与作为粘合剂的乙烯-乙酸乙烯酯(EVA)等树脂之间的结构。根据前述插入非粘合性片材的CIS系薄膜太阳能电池模块与以往的不插入非粘合性片材的CIS系薄膜太阳能电池模块的视觉比较结果,本发明人发现二者之间在色彩、亮度方面具有显著的差异,利用该视觉上的差异,可以显示文字、画、图样等图案,从而开发了提供带有图案显示功能的CIS系薄膜太阳能电池模块的方法。
专利文献1:日本公开特许第2001-257375号公报
发明内容
发明所要解决的问题
本发明解决了前述问题,本发明的目的是不降低CIS系薄膜太阳能电池模块的可靠性和转换效率等太阳能电池特性,而通过简单的制造工序(处理方法)以低成本显示文字、画、图样等图案,从而提高前述太阳能电池模块的设计性能和获得广告宣传效果。
解决问题的方法
(1)本发明是带有图案显示功能的CIS系薄膜太阳能电池模块,在前述CIS系薄膜太阳能电池模块上显示诸如文字、记号、花样、图形之类的显示图案,其中前述CIS系薄膜太阳能电池模块包括下述结构,即,在由在玻璃基板上依次层压碱性势垒层、金属背面电极层、光吸收层、缓冲层、窗口层(透明导电膜)而成的多个CIS系薄膜太阳能电池器件经由导电图案电连接而成的CIS系薄膜太阳能电池子模块上,以加热引起聚合反应而交联的乙烯-乙酸乙烯酯(以下称为EVA)树脂薄膜为粘合剂,粘贴了由超白半钢化玻璃等制成的玻璃盖板的结构,其中,
在前述CIS系薄膜太阳能电池子模块的窗口层(透明导电膜)与发挥粘合剂作用的交联EVA树脂薄膜之间,插入像剪纸那样切除了花样等任意显示图案的显示图案树脂薄膜,在CIS系薄膜太阳能电池模块表面(受光面)上显示前述显示图案。
(2)本发明是根据前述(1)所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其中前述显示图案是文字、记号、花样和图形中的任何一种或它们的组合。
(3)本发明是根据前述(1)所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其中前述显示图案树脂薄膜由聚酯树脂薄膜制成。
(4)本发明是根据前述(1)、(2)或(3)所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其中在前述CIS系薄膜太阳能电池模块的表面(受光面)中,前述显示图案树脂薄膜不存在的区域显示CIS系薄膜太阳能电池模块原有的黑色,而前述显示图案树脂薄膜存在的区域显示与前述CIS系薄膜太阳能电池模块原有颜色不同的灰色。
(5)本发明是根据前述(1)~(4)的任一项所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其中前述显示图案树脂薄膜存在的区域的总面积相对于前述CIS系薄膜太阳能电池模块的受光面积的比率为50%以下。
(6)本发明是一种带有图案显示功能的CIS系薄膜太阳能电池模块的制造方法,在前述CIS系薄膜太阳能电池模块上显示文字、记号、花样、图形之类的显示图案,前述电池模块包括下述结构,即,在由在玻璃基板上依次层压碱性势垒层、金属背面电极层、光吸收层、缓冲层、窗口层(透明导电膜)而成的多个CIS系薄膜太阳能电池器件经由导电图案电连接而成CIS系薄膜太阳能电池子模块上,以加热引起聚合反应而交联的乙烯-乙酸乙烯酯(以下称为EVA)树脂薄膜(或薄片)为粘合剂,粘贴了由超白半钢化玻璃等制成玻璃盖板的结构,
所述制造方法中,
在前述窗口层(透明导电膜)与EVA树脂薄膜之间,插入像剪纸那样切除了花样等显示图案的显示图案树脂薄膜,然后,将玻璃盖板配置在EVA树脂薄膜上,将该CIS系薄膜太阳能电池子模块与前述EVA树脂薄膜和玻璃盖板之间插入树脂薄膜而成的结构体进行真空加热,使前述EVA树脂薄膜交联,将CIS系薄膜太阳能电池子模块与玻璃盖板以在其中间夹入显示图案树脂薄膜的状态粘合。
(7)本发明是根据前述(6)所述的带有图案显示功能的CIS系薄膜太阳能电池模块的制造方法,其中将前述CIS系薄膜太阳能电池模块与前述EVA树脂薄膜和玻璃盖板之间插入前述显示图案树脂薄膜的结构体装入到真空加热装置,真空脱气,并加热到80~120℃,使前述EVA树脂薄膜在整个玻璃表面熔融扩散,然后,慢慢返回到大气,在120℃~160℃的温度下加热,将前述EVA树脂薄膜交联。
(8)本发明是根据前述(6)或(7)所述的带有图案显示功能的CIS系薄膜太阳能电池模块的制造方法,前述显示图案树脂薄膜由聚酯树脂薄膜制成。
发明效果
本发明不降低CIS系薄膜太阳能电池模块的可靠性和转换效率等太阳能电池特性,而通过简单的制造工序(处理方法)以低成本在CIS系薄膜太阳能电池模块上显示文字、画、图样等图案,从而可以提高前述太阳能电池模块的设计性能并且获得广告宣传效果。
附图说明
图1之(a)是本发明的带有图案显示功能的CIS系薄膜太阳能电极模块1的示意性结构图(截面图)。(b)是示出本发明的带有图案显示功能的CIS系薄膜太阳能电池模块1的表面(受光面)的显示状态(俯视图)的图。
图2是示出本发明的带有图案显示功能的CIS系薄膜太阳能电极模块1的制造方法的示意图。
图3是以往的没有图案显示功能的CIS系薄膜太阳能电池模块1A(设置框架、背板等的状态)的示意性结构图(截面图)。
图4是本发明的带有图案显示功能的CIS系薄膜太阳能电池模块1的CIS系薄膜太阳能电池器件2’的基本结构图(截面图)。
图5是插入作为显示图案树脂薄膜的非粘合性片材(聚酯薄膜等)S的结构的CIS系薄膜太阳能电池模块1B(设置框架、背板等的状态)的示意性结构图(截面图)。
符号说明
1    带有图案显示功能的CIS系薄膜太阳能电池模块
1A   CIS系薄膜太阳能电池模块(没有非粘合性片材)
1B   CIS系薄膜太阳能电池模块(插入非粘合性片材)
2    CIS系薄膜太阳能电池子模块
2’  CIS系薄膜太阳能电池器件
2A   玻璃基板
2B   碱性势垒层
2C   金属背面电极层
2D   p型光吸收层
2E   高电阻缓冲层
2F   n型窗口层(透明导电膜)
3    EVA树脂薄膜
F    显示图案树脂薄膜
F1   不存在显示图案树脂薄膜的区域
S    非粘合性片材
4    玻璃盖板
5    背板
6    带有电缆的连接盒
7    密封材料
8    框架
具体实施方式
以下说明本发明的实施方式。
本发明涉及显示文字、画、图样等图案的带有图案显示功能的CIS系薄膜太阳能电池模块。如图3所示,在CIS系薄膜太阳能电池模块1A中,在利用图案化而电连接多个CIS系薄膜太阳能电池器件2’(参照图4)而成的CIS系薄膜太阳能电池子模块(还称为电路)2上通过作为粘合剂的加热并交联的EVA树脂薄膜3粘合玻璃盖板4,背面侧的结构如下:在玻璃基板2A上通过加热、交联的EVA树脂薄膜3粘合背板5,在其下方设置带有电缆的连接盒6等,在该结构体的外周通过密封材料7安装框架8。
前述CIS系薄膜太阳能电池器件2’具有如图4所示的基本结构,并且是一种衬底结构的pn异质结器件,通过将由青板玻璃等制成的玻璃基板2A与在其上按碱性势垒层2B、金属背面电极层(通常为Mo)2C、p型CIS系光吸收层2D、高电阻缓冲层2E、n型窗口层(透明导电膜)2F的顺序依次层压高质量薄膜层而形成。前述光吸收层2C由多元化合物半导体薄膜,尤其是I-III-VI2族黄铜矿半导体,诸如二硒化铜铟(CuInSe2:以下简称为CISe)、二硒化铜铟镓(CuInGaSe2:以下简称为CIGSe)、二硒化铜镓(CuGaSe2:以下简称为CGSe)、二硒硫化铜铟镓(Cu(InGa)(SSe)2:以下简称为CIGSSe)、二硫化铜铟(CuInS2:以下简称为CIS)、二硫化铜镓(CuGaS2:以下简称为CGS)、二硫化铜铟镓(CuInGaS2:以下简称为CIGS)、具有二硒硫化铜铟镓(Cu(InGa)(SSe)2:CIGSSe)薄膜作为表面层的二硒化铜铟镓(CuInGaSe2:CIGSe)之类的p型半导体构成。
为了使前述CIS系薄膜太阳能电池模块1A容易再利用,如图5所示,采用一种在EVA树脂薄膜3与CIS系薄膜太阳能电池子模块2之间插入非粘合性片材(聚酯薄膜等)S的结构,其中,前述EVA树脂薄膜3用于将CIS系薄膜太阳能电池子模块2与玻璃盖板4粘合。通过这样的结构,CIS系薄膜太阳能电池模块1B的各构成部件容易分离和回收。
如果从受光面侧观察如图3所示的不插入非粘合性片材(聚酯薄膜等)S的结构的、即不实施再利用对策的CIS系薄膜太阳能电池模块1A、以及如前述图5所示的插入非粘合性片材(聚酯薄膜等)S的结构的、即实施再利用对策的CIS系薄膜太阳能电池模块1B,可以发现二者在色彩、颜色的亮度等方面具有差异。本发明利用不插入前述非粘合性片材(聚酯薄膜等)S的结构的CIS系薄膜太阳能电池模块1A与插入非粘合性片材(聚酯薄膜等)S的结构的CIS系薄膜太阳能电池模块1B之间的视觉感觉差异,可以显示文字、画、图样等图案。
下面说明本发明的带有图案显示功能的CIS系薄膜太阳能电池模块及其制造方法。
首先,本发明的带有图案显示功能的CIS系薄膜太阳能电池模块1,如图1之(a)(截面图:图1之(b)的分割线X-X’的截面)所示,在CIS系薄膜太阳能电池模块上显示文字、记号、花样、图形等显示图案,前述CIS系薄膜太阳能电池模块包括如下结构,即,通过在CIS系薄膜太阳能电池子模块2上,以加热引起聚合反应而交联的乙烯-乙酸乙烯酯(以下称为EVA)树脂薄膜3作为粘合剂,粘合由超白半钢化玻璃等制成的玻璃盖板的结构。在前述CIS系薄膜太阳能电池子模块2的窗口层(透明导电膜)侧与发挥粘合剂作用的交联EVA树脂薄膜3之间插入如剪纸那样切除了诸如图形之类的显示图案的显示图案树脂薄膜F,保持EVA树脂薄膜3与CIS系薄膜太阳能电池子模块2的粘合力,并且如图1之(b)所示,在CIS系薄膜太阳能电池模块1的表面显示前述显示图案。而且,前述CIS系薄膜太阳能电池子模块2通过导电图案将多个CIS系薄膜太阳能电池器件2’电连接而成,前述CIS系薄膜太阳能电池器件2’如图4所示,通过依次将碱性势垒层2B、金属背面电极层2C、光吸收层2D、缓冲层2E和窗口(层透明导电膜)2F在玻璃基板2A上层压而成。
前述显示图案树脂薄膜F可以是聚酯树脂薄膜以外的薄膜,但聚酯树脂薄膜是最适宜的。而且,前述显示图案包括文字、记号或如图2、3所示的图形的任何一种或者它们的组合。
在前述CIS系薄膜太阳能电池模块的表面(受光面)上,如图1之(b)所示,可以看到,前述显示图案树脂薄膜F不存在的区域F1显示CIS系薄膜太阳能电池模块原有的颜色(黑色),而前述显示图案树脂薄膜F存在的区域F显示与前述CIS系薄膜太阳能电池模块原有颜色不同的色彩(灰色)。
[表1]
由于插入显示图案树脂薄膜F而引起的转换效率的变化
 
薄膜占有率(%)       子模块单独(层压前)的转换效率(%)        模块(层压后)的转换效率(%) 转换效率的变化      
0(无薄膜) 12.4 11.5 1 11片的平均值
10 12.7 11.6 0.988
20 12.4 11.5 0.977
50 12.9 11.8 0.988
如前述表1所示,可以看出,与不插入前述薄膜F的现有模块相比,另外,无论前述显示图案树脂薄膜F存在的区域的总面积相对于CIS系薄膜太阳能电池模块1的受光面积的比例(以下称为薄膜占有率)的大小,插入显示图案树脂薄膜F的CIS系薄膜太阳能电池模块1的转换效率不怎么变化。另外,在前述表1中,层压后的模块的转换效率是指,在CIS系薄膜太阳能电池子模块2上依次层压显示图案树脂薄膜F、EVA树脂薄膜3和玻璃盖板4而成的CIS系薄膜太阳能电池模块1的转换效率。
然而,优选的是,前述显示图案树脂薄膜F存在的区域的总面积相对于前述CIS系薄膜太阳能电池模块1的受光面积的比例(薄膜占有率)为50%以下。这是因为,如果该比例为50%以上,虽然转换效率等太阳能电池特性降低很少,但在前述显示图案树脂薄膜F存在的区域中,CIS系薄膜太阳能电池子模块2与EVA树脂薄膜3不粘合,所以机械强度(粘合力)有可能降低。
优选的是,前述显示图案树脂薄膜F不配置在CIS系薄膜太阳能电池模块1(或者EVA树脂薄膜3)的周边部,并且前述显示图案树脂薄膜F存在的区域大致均等地分布。
接下来说明本发明的带有图案显示功能的CIS系薄膜太阳能电池模块1的制造方法。
其为如图1所示的在CIS系薄膜太阳能电池模块1上显示文字、记号、花样、图形等显示图案的带有图案显示功能的CIS系薄膜太阳能电池模块1的制造方法,其中,前述CIS系薄膜太阳能电池模块1包括下述结构,即,通过在CIS系薄膜太阳能电池子模块2的窗口层(透明导电膜)侧,以加热引起聚合反应而交联的乙烯-乙酸乙烯酯(以下称为EVA)树脂薄膜3作为粘合剂,粘合由超白半钢化玻璃等制成的玻璃盖板4的结构,在其制备方法中,如图2所示,在前述CIS系薄膜太阳能电池子模块2与EVA树脂薄膜3之间插入像剪纸那样切除了图形等显示图案的显示图案树脂薄膜F(参照图2之(B)和(C)),然后,在EVA树脂薄膜3上配置玻璃盖板4(参照图2之(D)),将在该CIS系薄膜太阳能电池子模块2与前述EVA树脂薄膜3和玻璃盖板4之间插入显示图案树脂薄膜F的结构体进行真空加热,将前述EVA树脂薄膜3交联,并通过EVA树脂薄膜3的粘合力,将CIS系薄膜太阳能电池子模块2与玻璃盖板4以在其中间插入显示图案薄膜F的状态粘合。
前述CIS系薄膜太阳能电池子模块2通过导电图案将多个CIS系薄膜太阳能电池器件2’电连接而成,其中前述CIS系薄膜太阳能电池器件2’如图4所示,通过在玻璃基板2A上依次层压碱性势垒层2B、金属背面电极层2C、光吸收层2D、缓冲层2E和窗口层(透明导电膜)2F而成。
以下说明前述制造方法的细节。
将在前述CIS系薄膜太阳能电池子模块2与前述EVA树脂薄膜3和玻璃盖板4之间夹入前述显示图案树脂薄膜F的结构体(参照图2(D))放入真空加热装置,真空脱气,并且加热到80~120℃,使前述EVA树脂薄膜3在整个玻璃表面熔融扩散,然后慢慢返回到大气,在120℃~160℃的温度下加热,将前述EVA树脂薄膜3交联。
前述显示图案树脂薄膜F可以是聚酯树脂薄膜以外的薄膜,但聚酯树脂薄膜是最适宜的。

Claims (8)

1.一种带有图案显示功能的CIS系薄膜太阳能电池模块,其特征在于,前述带有图案显示功能的CIS系薄膜太阳能电池模块在前述CIS系薄膜太阳能电池模块上显示诸如文字、记号、花样、图形之类的显示图案,其中前述CIS系薄膜太阳能电池模块包括下述结构,即,在由在玻璃基板上依次层压碱性势垒层、金属背面电极层、光吸收层、缓冲层、窗口层(透明导电膜)而成的多个CIS系薄膜太阳能电池器件经由导电图案电连接而成的CIS系薄膜太阳能电池子模块上,以加热引起聚合反应而交联的乙烯-乙酸乙烯酯(以下称为EVA)树脂薄膜为粘合剂,粘贴了由超白半钢化玻璃等制成的玻璃盖片的结构,其中,
在前述CIS系薄膜太阳能电池子模块的窗口层(透明导电膜)与发挥粘合剂作用的交联EVA树脂薄膜之间,插入像剪纸那样切除了花样等任意显示图案的显示图案树脂薄膜,在CIS系薄膜太阳能电池模块表面(受光面)上显示前述显示图案。
2.根据权利要求1所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其特征在于,前述显示图案是文字、记号、花样和图形中的任何一种或它们的组合。
3.根据权利要求1所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其特征在于,前述显示图案树脂薄膜由聚酯树脂薄膜制成。
4.根据权利要求1、2或3所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其特征在于,在前述CIS系薄膜太阳能电池模块的表面(受光面)中,前述显示图案树脂薄膜不存在的区域显示CIS系薄膜太阳能电池模块原有的黑色,而前述显示图案树脂薄膜存在的区域显示与前述CIS系薄膜太阳能电池模块原有颜色不同的灰色。
5.根据权利要求1~4的任一项所述的带有图案显示功能的CIS系薄膜太阳能电池模块,其特征在于,前述显示图案树脂薄膜存在的区域的总面积相对于前述CIS系薄膜太阳能电池模块的受光面积的比率为50%以下。
6.一种带有图案显示功能的CIS系薄膜太阳能电池模块的制造方法,其特征在于,前述带有图案显示功能的CIS系薄膜太阳能电池模块在前述CIS系薄膜太阳能电池模块上显示出诸如文字、记号、花样、图形之类的显示图案,前述电池模块包括下述结构,即,在由在玻璃基板上依次层压碱性势垒层、金属背面电极层、光吸收层、缓冲层、窗口层(透明导电膜)而成的多个CIS系薄膜太阳能电池器件经由导电图案电连接而成的CIS系薄膜太阳能电池子模块上,以加热引起聚合反应而交联的乙烯-乙酸乙烯酯(以下称为EVA)树脂薄膜(或薄片)为粘合剂,粘贴了由超白半钢化玻璃等制成的玻璃盖板的结构,
所述制造方法中,
在前述窗口层(透明导电膜)与EVA树脂薄膜之间,插入像剪纸那样切除了花样等显示图案的显示图案树脂薄膜,然后,将玻璃盖板配置在EVA树脂薄膜上,将该CIS系薄膜太阳能电池子模块与前述EVA树脂薄膜和玻璃盖板之间插入树脂薄膜而成的结构体进行真空加热,使前述EVA树脂薄膜交联,将CIS系薄膜太阳能电池子模块与玻璃盖板以在其中间夹入显示图案树脂薄膜的状态粘合。
7.根据权利要求6所述的带有图案显示功能的CIS系薄膜太阳能电池模块的制造方法,其特征在于,将前述CIS系薄膜太阳能电池模块与前述EVA树脂薄膜和玻璃盖板之间插入前述显示图案树脂薄膜的结构体装入真空加热装置,真空脱气,并加热到80~120℃,使前述EVA树脂薄膜在整个玻璃表面熔融扩散,然后,慢慢返回到大气,在120℃~160℃的温度下加热,将前述EVA树脂薄膜交联。
8.根据权利要求6或7所述的带有图案显示功能的CIS系薄膜太阳能电池模块的制造方法,其特征在于,前述显示图案树脂薄膜由聚酯树脂薄膜制成。
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KR101157365B1 (ko) * 2008-01-14 2012-06-15 (주)엘지하우시스 복층유리 조립체 및 이를 구비한 건물 일체형 태양광발전 모듈
US8115095B2 (en) 2009-02-20 2012-02-14 Miasole Protective layer for large-scale production of thin-film solar cells
US8110738B2 (en) 2009-02-20 2012-02-07 Miasole Protective layer for large-scale production of thin-film solar cells
KR101179443B1 (ko) * 2009-02-20 2012-09-04 미아솔 박막 태양 전지를 대량 생산하기 위한 보호층
KR101014106B1 (ko) * 2009-03-31 2011-02-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101180234B1 (ko) * 2009-04-03 2012-09-05 (주)엘지하우시스 디자인층을 구비한 건물 일체형 태양전지 모듈
JP2012182317A (ja) * 2011-03-01 2012-09-20 Sharp Corp 太陽電池モジュール、および太陽電池モジュールの製造方法
TW201248888A (en) * 2011-05-26 2012-12-01 Shui-Yang Lian Full color picture thin-film solar cell and manufacturing method thereof
KR101326950B1 (ko) * 2011-11-29 2013-11-13 엘지이노텍 주식회사 태양전지
KR101157094B1 (ko) * 2011-12-21 2012-06-22 (주)정도에너텍 광고 겸용 태양광 발전장치
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
JP2012099867A (ja) * 2012-02-20 2012-05-24 Sharp Corp 太陽電池装置
FR2993094B1 (fr) * 2012-07-06 2015-04-03 Wysips Dispositif pour ameliorer la qualite d'une image recouverte d'un film photovoltaique semi-transparent

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11175014A (ja) * 1997-12-12 1999-07-02 Misawa Homes Co Ltd 太陽電池タイル
JP3717369B2 (ja) * 2000-04-21 2005-11-16 シャープ株式会社 太陽電池モジュール及びその製造方法
JP3717372B2 (ja) * 2000-05-15 2005-11-16 シャープ株式会社 太陽電池モジュール
EP1470191B1 (en) * 2002-02-01 2012-11-21 Saint-Gobain Glass France S.A. Barrier layer made of a curable resin containing polymeric polyol
JP4271433B2 (ja) * 2002-12-05 2009-06-03 昭和シェル石油株式会社 Cis系薄膜太陽電池モジュールの構成部材回収方法
JP4316294B2 (ja) * 2003-05-21 2009-08-19 株式会社カネカ 透光性薄膜太陽電池の外観補修方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102396076A (zh) * 2009-06-30 2012-03-28 Lg伊诺特有限公司 太阳能电池及其制造方法
CN102396076B (zh) * 2009-06-30 2014-02-12 Lg伊诺特有限公司 太阳能电池及其制造方法
CN102136510A (zh) * 2010-01-27 2011-07-27 夏普株式会社 太阳能电池装置
CN102163635A (zh) * 2011-02-17 2011-08-24 林胜军 可颜色异形化的太阳能封装结构
WO2012145929A1 (zh) * 2011-04-29 2012-11-01 Lien Shui-Yang 可显现图像的薄膜太阳能电池及制造方法
CN108735846A (zh) * 2017-04-21 2018-11-02 上银光电股份有限公司 具发色图案的薄膜太阳能电池装置

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