WO2012134098A3 - 메모리 및 메모리 읽기 방법 - Google Patents

메모리 및 메모리 읽기 방법 Download PDF

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Publication number
WO2012134098A3
WO2012134098A3 PCT/KR2012/002049 KR2012002049W WO2012134098A3 WO 2012134098 A3 WO2012134098 A3 WO 2012134098A3 KR 2012002049 W KR2012002049 W KR 2012002049W WO 2012134098 A3 WO2012134098 A3 WO 2012134098A3
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WO
WIPO (PCT)
Prior art keywords
memory
cell array
nand cell
line address
bit
Prior art date
Application number
PCT/KR2012/002049
Other languages
English (en)
French (fr)
Other versions
WO2012134098A9 (ko
WO2012134098A2 (ko
Inventor
황태선
박인선
Original Assignee
(주)아토솔루션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)아토솔루션 filed Critical (주)아토솔루션
Priority to EP12763548.0A priority Critical patent/EP2696349A4/en
Priority to US14/009,309 priority patent/US9323469B2/en
Priority to CN201280026820.7A priority patent/CN103688312B/zh
Publication of WO2012134098A2 publication Critical patent/WO2012134098A2/ko
Publication of WO2012134098A3 publication Critical patent/WO2012134098A3/ko
Publication of WO2012134098A9 publication Critical patent/WO2012134098A9/ko

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/30—Reduction of number of input/output pins by using a serial interface to transmit or receive addresses or data, i.e. serial access memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)

Abstract

SPI 버스로 통신하는 NAND 셀 어레이를 포함하는 메모리에서 데이터를 읽는 방법이 공개된다. 이 방법은 NAND 셀 어레이의 블록 주소, 워드-라인 주소 및 비트-라인 주소를 순차적으로 입력받는 단계, 및 위의 비트-라인 주소의 입력이 완료된 후 즉시 NAND 셀 어레이에 기록된 데이터의 출력을 시작하는 단계를 포함한다. 이때, 위의 입력받는 단계는 한 개의 입력 단자를 통해 수행된다.
PCT/KR2012/002049 2011-04-01 2012-03-22 메모리 및 메모리 읽기 방법 WO2012134098A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP12763548.0A EP2696349A4 (en) 2011-04-01 2012-03-22 MEMORY AND METHOD FOR READING MEMORY
US14/009,309 US9323469B2 (en) 2011-04-01 2012-03-22 Memory, and method of reading data from the memory
CN201280026820.7A CN103688312B (zh) 2011-04-01 2012-03-22 存储器和存储器读取方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0030375 2011-04-01
KR1020110030375A KR101293225B1 (ko) 2011-04-01 2011-04-01 메모리 및 메모리 읽기 방법

Publications (3)

Publication Number Publication Date
WO2012134098A2 WO2012134098A2 (ko) 2012-10-04
WO2012134098A3 true WO2012134098A3 (ko) 2013-01-03
WO2012134098A9 WO2012134098A9 (ko) 2013-03-14

Family

ID=46932067

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/002049 WO2012134098A2 (ko) 2011-04-01 2012-03-22 메모리 및 메모리 읽기 방법

Country Status (5)

Country Link
US (1) US9323469B2 (ko)
EP (1) EP2696349A4 (ko)
KR (1) KR101293225B1 (ko)
CN (1) CN103688312B (ko)
WO (1) WO2012134098A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10108220B2 (en) * 2014-05-01 2018-10-23 Wisconsin Alumni Research Foundation Computer architecture having selectable, parallel and serial communication channels between processors and memory
CN105427883B (zh) * 2014-09-09 2018-09-14 旺宏电子股份有限公司 用于三维与非门高速缓存的预读方法及写入方法
CN105701021B (zh) * 2014-12-10 2021-03-02 慧荣科技股份有限公司 数据储存装置及其数据写入方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821226A (en) * 1987-01-30 1989-04-11 Rca Licensing Corporation Dual port video memory system having a bit-serial address input port
KR940001590B1 (ko) * 1991-07-05 1994-02-25 한국전기통신공사 블럭읽기 및 쓰기에서의 메모리 엑세스 시간 단축장치 및 방법
KR100673128B1 (ko) * 2000-12-04 2007-01-22 주식회사 하이닉스반도체 어드레스 전송 장치
KR20100087324A (ko) * 2007-10-17 2010-08-04 마이크론 테크놀로지, 인크. 동기식 직렬 인터페이스 ｎａｎｄ를 위한 설정 액세스 및 변경을 위한 시스템 및 방법

Family Cites Families (7)

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JPH10228773A (ja) * 1997-02-14 1998-08-25 Hitachi Ltd ダイナミック型ｒａｍ
TWI225260B (en) * 2002-10-07 2004-12-11 Samsung Electronics Co Ltd Circuits and methods for providing page mode operation in semiconductor memory device having partial activation architecture
US20110066920A1 (en) * 2003-12-02 2011-03-17 Super Talent Electronics Inc. Single-Chip Multi-Media Card/Secure Digital (MMC/SD) Controller Reading Power-On Boot Code from Integrated Flash Memory for User Storage
US7558900B2 (en) 2004-09-27 2009-07-07 Winbound Electronics Corporation Serial flash semiconductor memory
KR100811278B1 (ko) * 2006-12-29 2008-03-07 주식회사 하이닉스반도체 셀프 부스팅을 이용한 낸드 플래시 메모리소자의 읽기 방법
US8103936B2 (en) * 2007-10-17 2012-01-24 Micron Technology, Inc. System and method for data read of a synchronous serial interface NAND
JP2010140521A (ja) * 2008-12-09 2010-06-24 Powerchip Semiconductor Corp 不揮発性半導体記憶装置とその読み出し方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821226A (en) * 1987-01-30 1989-04-11 Rca Licensing Corporation Dual port video memory system having a bit-serial address input port
KR940001590B1 (ko) * 1991-07-05 1994-02-25 한국전기통신공사 블럭읽기 및 쓰기에서의 메모리 엑세스 시간 단축장치 및 방법
KR100673128B1 (ko) * 2000-12-04 2007-01-22 주식회사 하이닉스반도체 어드레스 전송 장치
KR20100087324A (ko) * 2007-10-17 2010-08-04 마이크론 테크놀로지, 인크. 동기식 직렬 인터페이스 ｎａｎｄ를 위한 설정 액세스 및 변경을 위한 시스템 및 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2696349A4 *

Also Published As

Publication number Publication date
KR101293225B1 (ko) 2013-08-05
CN103688312A (zh) 2014-03-26
US9323469B2 (en) 2016-04-26
EP2696349A2 (en) 2014-02-12
KR20120111713A (ko) 2012-10-10
WO2012134098A9 (ko) 2013-03-14
EP2696349A4 (en) 2015-03-04
CN103688312B (zh) 2017-04-05
WO2012134098A2 (ko) 2012-10-04
US20140244906A1 (en) 2014-08-28

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