WO2012134001A1 - Procédé permettant de tester des motifs, dispositif permettant de tester des motifs pour substrat par dessus lequel est formée une couche de motifs - Google Patents

Procédé permettant de tester des motifs, dispositif permettant de tester des motifs pour substrat par dessus lequel est formée une couche de motifs Download PDF

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Publication number
WO2012134001A1
WO2012134001A1 PCT/KR2011/006904 KR2011006904W WO2012134001A1 WO 2012134001 A1 WO2012134001 A1 WO 2012134001A1 KR 2011006904 W KR2011006904 W KR 2011006904W WO 2012134001 A1 WO2012134001 A1 WO 2012134001A1
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WO
WIPO (PCT)
Prior art keywords
substrate
pattern
wavelength
pattern layer
light
Prior art date
Application number
PCT/KR2011/006904
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English (en)
Korean (ko)
Inventor
박강환
Original Assignee
주식회사 앤비젼
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Publication date
Application filed by 주식회사 앤비젼 filed Critical 주식회사 앤비젼
Publication of WO2012134001A1 publication Critical patent/WO2012134001A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates

Definitions

  • the present invention relates to a pattern inspection method and a pattern inspection apparatus of a substrate on which a pattern layer is formed, and more particularly, to a pattern inspection method and a pattern inspection apparatus of a substrate on which a pattern layer is formed that enables efficient pattern inspection at low cost.
  • the display means can be directly applied to LCD, TV or AV monitors, computer displays, etc., which can be contributed to various video display devices in society, such as flat-vision panel, plasma display panel, plasma display panel, Liquid crystal displays (LCDs) are thin and light and have been developed in various ways to realize large screens.
  • LCDs liquid crystal displays
  • a liquid crystal display device includes a pair of transparent glass substrates on which transparent electrodes are formed, a liquid crystal material between two glass substrates, and two polarizers attached to the outer surface of each glass substrate to polarize light. It consists of an intestinal polarizer and a back light that emits light. Indium tin oxide (ITO) is widely used as a transparent electrode printed on a glass substrate in consideration of conductivity and transparency.
  • ITO Indium tin oxide
  • the transparent electrode is an electrode for applying a voltage to the liquid crystal material
  • the pattern inspection is performed because the accuracy of the electrode pattern shape is important.
  • it detects the change of capacitance by phase difference measuring method using a dedicated integrated circuit and checks the accuracy of the pattern as the degree of response or by checking the shape of the pattern reflected by the light by using camera, lens, or lighting. This is used.
  • the present invention is to solve the above problems, an object of the present invention to provide a pattern inspection method and a pattern inspection apparatus of a substrate on which a pattern layer capable of efficient pattern inspection through a light of a specific wavelength and a camera.
  • Pattern inspection method of a substrate having a pattern layer for achieving the above object is a wavelength within the range that the substrate is transmitted, but the pattern layer is not transmitted on the substrate on which the pattern layer is formed. Irradiating a first wavelength light having a first wavelength that is phosphorus; And detecting the first wavelength light transmitted through the substrate on which the pattern layer is formed.
  • the pattern layer may be formed by coating an indium tin oxide (ITO) on the substrate to form a pattern
  • the substrate may be a glass substrate.
  • the first wavelength is a wavelength in the ultraviolet wavelength region, it may be a wavelength within 250nm to 350nm.
  • the pattern inspection method of the substrate on which the pattern layer is formed may further include detecting the first wavelength light transmitted through the substrate on which the pattern layer is formed and inspecting the pattern layer formed on the substrate.
  • the pattern layer is inspected by detecting an error by comparing the image formed by the first wavelength light with the standard image.
  • a pattern inspection apparatus for a substrate on which a pattern layer is formed includes a first wavelength having a first wavelength on the substrate on which the pattern layer is formed, a wavelength within a range in which the substrate transmits and the pattern layer does not transmit.
  • a sensing unit configured to detect first wavelength light transmitted through the substrate on which the pattern layer is formed.
  • the pattern layer may be formed by coating an indium tin oxide (ITO) on the substrate to form a pattern
  • the substrate may be a glass substrate.
  • the first wavelength is a wavelength of the ultraviolet wavelength region, may be a wavelength within 250nm to 350nm.
  • the sensing unit may detect the first wavelength light transmitted through the substrate on which the pattern layer is formed, and then inspect the pattern layer formed on the substrate.
  • the pattern inspection method of the substrate on which the pattern layer is formed according to the present invention is used, the pattern is inspected through an optical inspection method according to the transmission wavelength difference between the substrate and the pattern. There is an effect that can be inspected at an ultra high resolution having a contrast of more than twice.
  • 1 is a view provided for the description of the pattern inspection method of the substrate on which the pattern layer is formed according to an embodiment of the present invention.
  • 2A and 2B are graphs showing absorbance according to wavelengths of glass and ITO, respectively.
  • FIG 3 is a view showing a pattern inspection apparatus of a substrate on which a pattern layer is formed according to an embodiment of the present invention.
  • 4A and 4B are views provided to explain a pattern inspection method of a substrate on which a pattern layer is formed according to another embodiment of the present invention.
  • 5 is a view showing absorbance according to the wavelength of the polyimide.
  • FIG. 6 is a diagram illustrating a pattern inspection apparatus of a substrate on which a pattern layer is formed, according to another embodiment of the present invention.
  • FIG. 7 is a view showing a specific configuration of the pattern inspection apparatus according to the present invention.
  • FIG. 8 is a view showing the concept of a pattern inspection method according to the present invention.
  • 1 is a view provided for the description of the pattern inspection method of the substrate on which the pattern layer is formed according to an embodiment of the present invention.
  • the pattern inspection method of the substrate on which the pattern layer is formed includes a first wavelength light having a first wavelength on the substrate on which the pattern layer is formed, a wavelength within a range in which the substrate transmits and the pattern layer does not transmit. Investigating; And detecting the first wavelength light transmitted through the substrate on which the pattern layer is formed.
  • the pattern layer 120 formed on the substrate 110 refers to the pattern layer 120 formed of a material different from that of the substrate 110.
  • the substrate 110 transmits but the pattern layer 120 does not transmit. Does not irradiate light.
  • the first wavelength light L 1 is irradiated from the lower side of the substrate 110 to the upper side where the pattern layer 120 is formed.
  • the first wavelength light L 1 transmits the substrate 110 but does not transmit the pattern layer 120. That is, the first wavelength light L 1 is light having a first wavelength that is a wavelength that the substrate 110 transmits but the pattern layer 120 does not transmit.
  • the surface opposite to the surface where the first wavelength light is irradiated The first wavelength light transmitted through the pattern layer 120 may be detected by using a sensing unit capable of detecting the first wavelength light in. Accordingly, the region in which the first wavelength light is detected is a region in which the first wavelength light is transmitted as it is because no pattern is formed in the pattern layer 120, and the region in which the first wavelength light is not detected is the pattern layer. Since the region that does not transmit 120, that is, the region where the first wavelength light is absorbed by the pattern layer 120, is a region where a pattern is formed.
  • the pattern shape may be obtained according to whether the first wavelength light is detected, the pattern of the substrate 110 on which the pattern layer 120 is formed may be inspected.
  • the substrate 110 is a substrate that transmits light having a wavelength in the ultraviolet region, that is, a wavelength of 100 nm to 380 nm, and when the pattern layer 120 includes a material that does not transmit light having a wavelength in the ultraviolet region, the ultraviolet sensing unit is used.
  • the shape of the pattern layer 120 can be detected.
  • the substrate 110 is a glass substrate and the pattern layer 120 includes ITO.
  • 2A and 2B are graphs showing absorbance according to wavelengths of glass and ITO, respectively. Comparing FIGS. 2A and 2B, the glass has a high transmittance even at a wavelength of 250 nm to 350 nm, and transmits light having a wavelength of 250 nm to 350 nm.
  • the graph showing the tendency of the light transmittance to fall to 0% near 350 nm it can be predicted that the light transmittance is hardly transmitted at 250 nm to 350 nm.
  • the pattern layer 120 may be inspected by setting the wavelength of the first wavelength light to 250 nm to 350 nm.
  • FIG 3 is a view showing a pattern inspection apparatus of a substrate on which a pattern layer is formed according to an embodiment of the present invention.
  • the pattern inspection apparatus 350 of FIG. 3 applies a first wavelength light having a first wavelength that is a wavelength within a range in which the substrate transmits and the pattern layer does not transmit to the substrate 330 on which the pattern layer is formed.
  • a sensing unit 320 that detects transmitted light that is light passing through the substrate 330 on which the pattern layer is formed.
  • the light emitting unit 310 irradiates the first wavelength light having the first wavelength, which is a wavelength within a range through which the substrate is transmitted but not the pattern layer, toward the substrate 330 on which the pattern layer is formed.
  • the sensing unit 320 detects the transmitted first wavelength light and inspects the pattern using the first wavelength light.
  • the pattern layer on the substrate may be located on either side facing the light emitting portion or the side facing the sensing portion.
  • 4A and 4B are views provided to explain a pattern inspection method of a substrate on which a pattern layer is formed according to another embodiment of the present invention.
  • FIG. 4A and 4B are views provided to explain a pattern inspection method of a substrate on which a pattern layer 220 according to another embodiment of the present invention is formed.
  • the pattern layer 220 is formed on the substrate 210, and a fluorescent material layer 230 is further formed on the pattern layer 220.
  • the same contents as those described with reference to FIG. 1 will be omitted.
  • the fluorescent material layer 230 absorbs the first wavelength light to generate the second wavelength light having the second wavelength.
  • the first wavelength light L 1 when the first wavelength light L 1 is irradiated to the lower portion of the substrate 210, the first wavelength light L 1 transmits the substrate 210 but does not transmit the pattern layer 220. Therefore, the first wavelength light L 1 transmitted to the region where the pattern layer 220 is not formed is converted into light having a wavelength different from that of the first wavelength in the fluorescent material layer 230 formed thereon.
  • the second wavelength converted from the fluorescent material layer 230 to a wavelength different from the first wavelength is emitted again in the direction in which the first wavelength is scanned.
  • the first wavelength is absorbed by the fluorescent material layer 230
  • the second wavelength is emitted in the direction in which the first wavelength is scanned according to the energy change caused by the chemical reaction of the fluorescent material centered on the absorbed surface.
  • the second wavelength light L 2 is detected by using a sensing unit capable of detecting the second wavelength under the fluorescent material layer 230.
  • the wavelength of the light used for the pattern inspection is converted using the fluorescent material layer 230 in consideration of the optical characteristics of the substrate 210 and the pattern layer 220. That is, when the optical characteristics of the substrate 210 and the pattern layer 220 are very similar, the first wavelength region that transmits the substrate 210 but does not transmit the pattern layer 220 is difficult to find in the visible light region. You can find it at However, when the first wavelength is an ultraviolet region, the UV sensing unit for detecting ultraviolet rays may be expensive. Therefore, in order to use a camera for a visible light which is inexpensive and relatively simple to use, it is preferable to convert the light of the first wavelength, which is an ultraviolet region, into the light of the second wavelength, which is a visible region, and detect it.
  • the phosphor layer 230 may be polyimide.
  • some of the directional polyimide of the polyimide exhibits a fluorescence property that absorbs light in the wavelength of 250nm to 350nm to emit light in the wavelength of 400nm to 500nm.
  • Examples of the polyimide exhibiting such characteristics include Ph / An of Formula 1, Ph4F / An of Formula 2, Ph / Ch of Formula 3, and Ph4F / Ch of Formula 4.
  • 5 is a view showing absorbance according to the wavelength of the polyimide of Formula 1 to Formula 4.
  • the first wavelength light of 250 nm to 350 nm may be irradiated to the substrate 210 for inspection.
  • the first wavelength light L 1 of 250 nm to 350 nm transmitted through the pattern layer 220 is converted into the second wavelength light L 2 having a wavelength of 400 nm to 500 nm in the polyimide fluorescent material layer 230, and the visible light camera and By using the same sensing unit, the pattern of the pattern layer 220 may be inspected.
  • the polyimide may be used as an alignment layer for uniformly aligning the liquid crystal in the glass substrate in which the transparent electrode is patterned in the liquid crystal display device. Therefore, when the substrate on which the pattern layer of the present invention is formed is a glass substrate on which an ITO pattern is formed, and the present substrate is used in a liquid crystal display device, polyimide is formed on the ITO pattern as an alignment film. Therefore, the ITO pattern can be inspected using the polyimide used as the alignment layer without forming a separate fluorescent material layer 230.
  • the phosphor layer 230 is formed below the substrate 210, unlike FIG. 4A.
  • the phosphor layer 230 may be formed on the pattern layer 220 of the substrate 210, the phosphor layer 230 may be formed below the substrate 210, that is, on the surface where the pattern layer 220 is not formed. If the phosphor layer 230 is not directly formed on the substrate 210, the phosphor layer 230 may be used as a method of separately mounting the phosphor layer 230 for pattern inspection. Thus, the phosphor layer 230 may or may not be in contact with the surface of the substrate 210 or the pattern layer 220.
  • the first wavelength light L 1 for pattern inspection is irradiated from the pattern layer 220 side rather than the bottom of the substrate 210.
  • the first wavelength light L 1 irradiated from the pattern layer 220 side does not transmit the region in which the pattern is formed in the pattern layer 220, and the region in which the pattern is not formed passes through the substrate 210 to form the fluorescent material layer 230.
  • the first wavelength light L 1 is converted into the second wavelength light L 2 from the fluorescent material layer 230 and detected by a sensing unit capable of detecting the second wavelength light located on the pattern layer 220 side, and the pattern is inspected. do.
  • FIG. 6 is a view showing an example of a pattern inspection apparatus of a substrate on which a pattern layer is formed according to another embodiment of the present invention.
  • the pattern inspecting apparatus 500 of FIG. 6 includes a light emitting part for irradiating first wavelength light having a first wavelength having a wavelength within a range in which the substrate is transmitted and the pattern layer is not transmitted. 310, a sensing unit 320 for detecting the second wavelength light having a second wavelength emitted while the stage 340 supporting the substrate and the irradiated first wavelength light pass through the substrate on which the pattern layer is formed. Include.
  • the light emitting unit 510 irradiates the first wavelength light having the first wavelength, which is a wavelength within a range of transmitting the substrate and not transmitting the pattern layer, toward the substrate 330 on which the pattern layer is formed.
  • the substrate 330 on which the pattern layer is formed is a fluorescent material that absorbs first wavelength light having a wavelength within a range in which the substrate transmits and does not transmit the pattern layer to generate a second wavelength light having a second wavelength different from that. It may be a substrate further comprising a layer.
  • the light emitter 310 emits the first wavelength light
  • the sensing unit 320 detects the wavelength-converted second wavelength light emitted from the fluorescent material layer. .
  • FIG. 7 is a view showing another example of a pattern inspection apparatus of a substrate on which a pattern layer is formed according to another embodiment of the present invention.
  • the light emitting unit 610 and the sensing unit 620 are located together on one surface of a substrate 630 on which a pattern layer including a fluorescent material layer is formed. That is, in FIG. 7, the light emitting part 610 and the sensing part 620 are located together on the substrate 630 on which the pattern layer including the fluorescent material layer is formed.
  • the size of the pattern inspection apparatus may be reduced.
  • Figure 7 further shows an optical system 611 that can change the direction of the emitted light or the detected light Equipped.
  • the first wavelength light irradiated from the light emitting unit 610 inside the optical system 611 includes a pattern including a fluorescent material layer. And a mirror for reflecting toward the substrate 630 on which the layer is formed and transmitting the second wavelength light, which is light emitted from the substrate 630 on which the pattern layer including the fluorescent material layer is formed.
  • the mirror transmits the first wavelength light from the light emitting part and the second from the substrate on which the pattern layer including the fluorescent material layer is formed.
  • Wavelength light must be able to reflect. Therefore, the type of the light emitting part, the sensing part, and the mirror may be changed according to the position of the first wavelength light, the fluorescent material layer, and the substrate.
  • the substrate 210 is a glass substrate
  • an ITO pattern is formed
  • the phosphor layer 640 includes polyimide.
  • the light emitting unit 610 emits the first wavelength light L 1 having a wavelength of 250 nm to 350 nm
  • the mirror 612 reflects the wavelength of 250 nm to 350 nm in the optical system 611.
  • the reflected first wavelength light is irradiated onto the substrate 630 on which the pattern layer is formed, and the first wavelength light transmitted to the region where the pattern layer is not formed reaches the fluorescent material layer 640 and has a wavelength of 400 nm to 500 nm. It is converted into the second wavelength light L 2 .
  • the second wavelength light is emitted to the upper portion of the fluorescent material layer 640 and proceeds toward the sensing unit 620, and the mirror 612 transmits the light having a wavelength of 400 nm to 500 nm without reflecting the light of the sensing unit 620. It is detected by the lens 621 and detected by the camera 622. Therefore, since the second wavelength light is visible light of 400 nm to 500 nm, the camera 622 may use either a CCD camera or a CMOS camera having an ultraviolet filter and an infrared filter, which are not UV cameras.
  • the sensing unit 520 detects the first wavelength light and thus may be a UV camera.
  • a reflective plate may be provided to allow the transmitted light to proceed to the sensing unit 520.
  • a stage 660 may be provided to support the substrate 630 on which the pattern layer is formed and to transport the substrate 630 as necessary.
  • the pattern may be continuously inspected according to the movement of the stage 660.
  • the phosphor layer 640 is formed on the substrate on which the pattern layer is formed.
  • the phosphor layer is provided on the stage 660, and only the substrate on which the pattern layer is formed may be mounted to inspect the pattern. have.
  • the patterned substrate is separated and the phosphor layer can be reused to inspect the substrate on which the other patterned layer is formed.
  • the image detected by the camera 622 of the sensing unit 620 is transmitted to the control unit 710 to perform a pattern test.
  • the preprocessing unit 711 of the controller 710 acquires an image captured by the camera 622 and performs calibration for noise removal and precision measurement.
  • the image photographed by the camera is an image formed by the first wavelength on the substrate on which the pattern layer is formed, which is a wavelength within a range in which the substrate transmits and the pattern layer does not transmit, as described in the above embodiment, or On the substrate on which the pattern layer is formed, an image formed by the second wavelength whose wavelength is within a range in which the substrate transmits and the pattern layer does not transmit is irradiated and the wavelength of the first wavelength light is converted by the fluorescent material layer. to be.
  • the pattern inspecting unit 712 of the controller 710 detects an error of the captured image by comparing the preprocessed image by the preprocessing unit 711 with the standard pattern.
  • the detection of an error compares the captured image with the standard image as shown in FIG. 8 and detects an error degree from the difference.
  • the controller 710 not only outputs the information on the error of the pattern image detected by the pattern inspector 712 through the output unit 720 but also stores it in the database 730.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • General Health & Medical Sciences (AREA)
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  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

La présente invention concerne un procédé permettant de tester des motifs et un dispositif permettant de tester des motifs pour un substrat par dessus lequel est formée une couche de motifs. Plus particulièrement, l'invention concerne un procédé permettant de tester des motifs et un dispositif permettant de tester des motifs pour un substrat par dessus lequel est formée une couche de motifs, le procédé et le dispositif permettant un test efficace et bon marché des motifs, et comprenant les étapes consistant à appliquer sur le substrat sur lequel est formée une couche de motifs, une première longueur d'onde lumineuse ayant une première longueur d'onde, laquelle longueur d'onde se trouve dans la gamme pénétrant le substrat sans pénétrer la couche de motifs; puis à détecter la première longueur d'onde lumineuse ayant pénétré le substrat sur lequel est formée la couche de motifs.
PCT/KR2011/006904 2011-03-30 2011-09-19 Procédé permettant de tester des motifs, dispositif permettant de tester des motifs pour substrat par dessus lequel est formée une couche de motifs WO2012134001A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0028655 2011-03-30
KR1020110028655A KR101263095B1 (ko) 2011-03-30 2011-03-30 패턴층이 형성된 기판의 패턴검사방법 및 패턴검사장치

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WO2012134001A1 true WO2012134001A1 (fr) 2012-10-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015076513A1 (fr) * 2013-11-19 2015-05-28 동우화인켐 주식회사 Appareil d'inspection de transmittance de motif imprimé pour capteur ir

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101366815B1 (ko) * 2013-07-12 2014-02-25 주식회사 에이피에스 그래핀 인쇄패턴 검사장치와, 그래핀 인쇄패턴 검사시스템 및 그 운용방법
KR101366816B1 (ko) * 2013-07-12 2014-02-25 주식회사 에이피에스 그래핀 인쇄패턴 검사장치와, 그래핀 인쇄패턴 검사시스템 및 그 운용방법
KR101432468B1 (ko) * 2014-02-20 2014-08-22 피에스아이트레이딩 주식회사 투명 도전막 패턴의 검사 장치
KR102037984B1 (ko) 2017-11-23 2019-10-29 주식회사 나노정밀코리아 다기능 광학 검사장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05248835A (ja) * 1992-03-04 1993-09-28 Fujitsu Ltd パターンの検査方法及びその検査装置
JP2001083101A (ja) * 1999-09-17 2001-03-30 Nec Corp 光学的パターン検査装置
JP2003215060A (ja) * 2002-01-22 2003-07-30 Tokyo Seimitsu Co Ltd パターン検査方法及び検査装置
JP2007086100A (ja) * 2005-09-20 2007-04-05 Advanced Mask Inspection Technology Kk パタン検査装置
JP2007188090A (ja) * 2006-01-13 2007-07-26 Icf Technology Co Ltd 基板構造及び該基板構造上にパターン層を形成する方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4392182B2 (ja) * 2003-03-28 2009-12-24 大日本印刷株式会社 透明層の欠陥検査方法、及び熱転写シートの欠陥検査方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05248835A (ja) * 1992-03-04 1993-09-28 Fujitsu Ltd パターンの検査方法及びその検査装置
JP2001083101A (ja) * 1999-09-17 2001-03-30 Nec Corp 光学的パターン検査装置
JP2003215060A (ja) * 2002-01-22 2003-07-30 Tokyo Seimitsu Co Ltd パターン検査方法及び検査装置
JP2007086100A (ja) * 2005-09-20 2007-04-05 Advanced Mask Inspection Technology Kk パタン検査装置
JP2007188090A (ja) * 2006-01-13 2007-07-26 Icf Technology Co Ltd 基板構造及び該基板構造上にパターン層を形成する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015076513A1 (fr) * 2013-11-19 2015-05-28 동우화인켐 주식회사 Appareil d'inspection de transmittance de motif imprimé pour capteur ir

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