WO2012124307A1 - Prepreg for build-up - Google Patents
Prepreg for build-up Download PDFInfo
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- WO2012124307A1 WO2012124307A1 PCT/JP2012/001685 JP2012001685W WO2012124307A1 WO 2012124307 A1 WO2012124307 A1 WO 2012124307A1 JP 2012001685 W JP2012001685 W JP 2012001685W WO 2012124307 A1 WO2012124307 A1 WO 2012124307A1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/04—Reinforcing macromolecular compounds with loose or coherent fibrous material
- C08J5/0405—Reinforcing macromolecular compounds with loose or coherent fibrous material with inorganic fibres
- C08J5/043—Reinforcing macromolecular compounds with loose or coherent fibrous material with inorganic fibres with glass fibres
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
- C08J5/241—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres
- C08J5/244—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres using glass fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/12—Layered products comprising a layer of synthetic resin next to a fibrous or filamentary layer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
- C08J5/249—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs characterised by the additives used in the prepolymer mixture
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0366—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Reinforced Plastic Materials (AREA)
- Laminated Bodies (AREA)
Abstract
Description
繊維基材と、前記繊維基材の両面に設けられた樹脂層とを備え、
IPC-TM-650 Method 2.3.17に準拠し、171±3℃、1380±70kPaの条件で5分間加熱加圧して測定された樹脂流れが、15重量%以上50重量%以下である、ビルドアップ用プリプレグが提供される。
本発明のビルドアップ用プリプレグは、樹脂層に熱硬化性樹脂を含有し、
前記熱硬化性樹脂は、エポキシ樹脂、シアネート樹脂及びマレイミド化合物から選択されるものであることが好ましい。 According to the present invention,
A fiber base and a resin layer provided on both sides of the fiber base;
According to IPC-TM-650 Method 2.3.17, the resin flow measured by heating and pressurizing for 5 minutes under the conditions of 171 ± 3 ° C. and 1380 ± 70 kPa is 15 wt% or more and 50 wt% or less. A build-up prepreg is provided.
The build-up prepreg of the present invention contains a thermosetting resin in the resin layer,
The thermosetting resin is preferably selected from an epoxy resin, a cyanate resin, and a maleimide compound.
片面または両面に回路形成面を有するコア層と、
前記コア層の前記回路形成面に積層されたビルドアップ層と、
を備え、
前記ビルドアップ層は、上記のビルドアップ用プリプレグを硬化して形成したものである、積層板が提供される。 Moreover, according to the present invention,
A core layer having a circuit forming surface on one or both sides;
A buildup layer laminated on the circuit forming surface of the core layer;
With
The build-up layer is provided with a laminated board formed by curing the build-up prepreg.
上記の積層板と、
前記積層体に実装された半導体素子と、
を備える半導体装置が提供される。 Moreover, according to the present invention,
The above laminate,
A semiconductor element mounted on the laminate,
A semiconductor device is provided.
片面または両面に回路形成面を有するコア層の前記回路形成面に、加熱加圧下、ビルドアップ用プリプレグをラミネートするラミネート工程と、
ラミネートした前記ビルドアップ用プリプレグの表面を平滑して積層板を得る平滑化工程と、
を連続的に行う積層板の製造方法であって、
前記ラミネート工程において、対向する一対の金属板で前記コア層と前記ビルドアップ用プリプレグとを挟んだ状態で加熱および加圧し、
前記ビルドアップ用プリプレグとして、上記のビルドアップ用プリプレグを用いる、積層板の製造方法
が提供される。 Furthermore, according to the present invention,
A laminating step of laminating a prepreg for buildup on the circuit forming surface of the core layer having a circuit forming surface on one side or both sides under heat and pressure;
A smoothing step of smoothing the surface of the laminated prepreg for buildup to obtain a laminate;
A method of manufacturing a laminated board that continuously performs
In the laminating step, heating and pressurizing the core layer and the prepreg for buildup sandwiched between a pair of opposing metal plates,
As the build-up prepreg, there is provided a method for producing a laminated board using the build-up prepreg.
なお、上記のゴム板は下記(i)~(iii)を満たすものを用いる。
(i)JIS K 6253 Aに準拠して測定したゴム硬度が60°
(ii)厚み3mm
(iii)材質がシリコン Further, the prepreg according to the present invention protrudes from the outer edge of the fiber base material in a plan view when heated and pressed under the conditions of 120 ° C. and 2.5 MPa with the pair of opposed rubber plates sandwiched between the prepregs. The weight of the resin layer is preferably 5% by weight or less with respect to the entire resin layer. By carrying out like this, the thickness uniformity of the laminated board obtained can be improved further. Therefore, when laminated on a core layer having a circuit forming surface, it is excellent for embedding of the inner layer circuit, can suppress the outflow of the resin layer from the prepreg during the lamination press, and can further improve the thickness uniformity. Pre-preg becomes feasible.
The rubber plate satisfying the following (i) to (iii) is used.
(I) Rubber hardness measured in accordance with JIS K 6253 A is 60 °
(Ii) Thickness 3mm
(Iii) Material is silicon
図1は、本発明のプリプレグの一例を示す図である。プリプレグ1は、繊維基材2と、繊維基材2の両面に設けられ、熱硬化性樹脂を含有する樹脂層3、4とを備える。プリプレグ1は、繊維基材2に樹脂組成物を含浸させて形成することができる。以下、プリプレグ1に用いられる樹脂組成物Pについて説明するが、樹脂層3、4を構成する樹脂組成物は、互いに同一であってもよいし、それぞれ異なっていてもよい。 [Prepreg]
FIG. 1 is a diagram showing an example of a prepreg of the present invention. The
また、ロール状に巻き取られたシート状繊維基材2をロールにより連続的に搬送し、樹脂ワニスVへ含浸及び乾燥を行うことで、ロール状に巻回積層されたプリプレグ1を製造してもよい。 After impregnating the
Moreover, the sheet-like
つづいて、プリプレグ1を用いた積層板について説明する。この積層板は、片面又は両面に回路形成面を有するコア層と、コア層の回路形成面に積層されたビルドアップ層と、を備える。ビルドアップ層は、上記のプリプレグ1を硬化して形成したものである。 [Laminated board]
Next, a laminate using the
次に、半導体装置について説明する。
この半導体装置は、上記の積層配線板に半導体素子を実装し、製造することができる。半導体素子の実装方法、封止方法は特に限定されない。例えば、次のような方法で製造することができる。 [Semiconductor device]
Next, a semiconductor device will be described.
This semiconductor device can be manufactured by mounting a semiconductor element on the laminated wiring board. The mounting method and the sealing method of the semiconductor element are not particularly limited. For example, it can be manufactured by the following method.
実施例及び比較例において用いた原材料は以下の通りである。
無機充填材:球状シリカ(アドマテックス社製、SO-25R、平均粒径0.5μm)
無機充填材:ベーマイト(ナバルテック社製、AOH-30)
有機充填材:シリコーン粒子(信越化学工業社製、KMP600、平均粒径5μm)
エポキシ樹脂:ビフェニルアラルキル型ノボラックエポキシ樹脂(日本化薬社製、NC-3000)
エポキシ樹脂:ジシクロペンタジエン型ノボラックエポキシ樹脂(DIC社製、HP-7200L、HP-7200)
エポキシ樹脂:ビスフェノールA型液状エポキシ樹脂(三菱化学社製、jER-828)
エポキシ樹脂:ビスフェノールF型液状エポキシ樹脂(三菱化学社製、jER-807)
シアネート樹脂:ノボラック型シアネート樹脂(LONZA社製、Primaset PT-30)
マレイミド化合物:ケイアイ化成工業社製、BMI-70
フェノール硬化剤:ノボラック型フェノール樹脂(DIC社製、TD-2090-60M、60%(w/v)メチルエチルケトン溶液)
アミン硬化剤:3,3'-ジエチル-4,4'-ジアミノジフェニルメタン(日本化薬社製、カヤハードA-A)
フェノキシ樹脂:三菱化学社製、YX6954BH30、30%(w/v)メチルエチルケトン/アノン溶液
ポリビニルアセタール樹脂:積水化学社製、KS-10(水酸基25mol%)
硬化触媒:2-エチル-4-メチルイミダゾール(四国化成社製、2E4MZ)
カップリング剤:N-フェニル-3-アミノプロピルトリメトキシシラン(信越化学工業社製、KBM-573)
カップリング剤:エポキシシラン(信越化学工業社製、KBM-403) The prepreg shown in FIG. 1 was produced.
The raw materials used in Examples and Comparative Examples are as follows.
Inorganic filler: spherical silica (manufactured by Admatechs, SO-25R, average particle size 0.5 μm)
Inorganic filler: Boehmite (Navaltech, AOH-30)
Organic filler: Silicone particles (manufactured by Shin-Etsu Chemical Co., Ltd., KMP600,
Epoxy resin: Biphenyl aralkyl type novolac epoxy resin (Nippon Kayaku Co., Ltd., NC-3000)
Epoxy resin: dicyclopentadiene type novolac epoxy resin (manufactured by DIC, HP-7200L, HP-7200)
Epoxy resin: Bisphenol A type liquid epoxy resin (Mitsubishi Chemical Corporation, jER-828)
Epoxy resin: Bisphenol F type liquid epoxy resin (Mitsubishi Chemical Corporation, jER-807)
Cyanate resin: Novolac type cyanate resin (manufactured by LONZA, Primaset PT-30)
Maleimide compound: BMI-70, manufactured by KAI Kasei Kogyo Co., Ltd.
Phenol curing agent: Novolac type phenol resin (manufactured by DIC, TD-2090-60M, 60% (w / v) methyl ethyl ketone solution)
Amine curing agent: 3,3′-diethyl-4,4′-diaminodiphenylmethane (manufactured by Nippon Kayaku Co., Ltd., Kayahard AA)
Phenoxy resin: manufactured by Mitsubishi Chemical Corporation, YX6954BH30, 30% (w / v) methyl ethyl ketone / anone solution polyvinyl acetal resin: manufactured by Sekisui Chemical Co., Ltd., KS-10 (hydroxyl group 25 mol%)
Curing catalyst: 2-ethyl-4-methylimidazole (manufactured by Shikoku Kasei Co., Ltd., 2E4MZ)
Coupling agent: N-phenyl-3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-573)
Coupling agent: Epoxysilane (Shin-Etsu Chemical Co., Ltd., KBM-403)
(1)ワニスの調製
エポキシ樹脂としてジシクロペンタジエン型エポキシ樹脂(DIC社製、HP-7200)30重量部、ビスフェノールF型液状エポキシ樹脂(三菱化学社製、jER807)3重量部、シアネート樹脂としてフェノールノボラック型シアネート樹脂(LONZA社製、PrimasetPT-30)14重量部、フェノキシ樹脂として三菱化学社製YX6954BH30を固形分換算で3重量部、硬化触媒としてイミダゾール(四国化成社製、2E4MZ)0.2重量部をメチルエチルケトンとシクロヘキサノンの混合溶媒で60分間撹拌し、溶解させた。さらにカップリング剤としてN-フェニル-3-アミノプロピルトリメトキシシラン(信越化学工業社製、KBM-573)0.1重量部と無機充填材として球状シリカ(アドマテックス社製SO25R,平均粒径0.5μm)49.7重量部を添加して高速撹拌装置で10分撹拌し、固形分65%の樹脂ワニスを作製した。
(2)樹脂シートの作製
前記ワニスを厚さ36μmのPET(ポリエチレンテレフタレート)フィルムの片面に、コンマコーター装置を用いて塗工し、これを160℃の乾燥装置で3分間乾燥し、基材付き樹脂シートを形成した。
樹脂厚みは22μm(樹脂シート1)および13μm(樹脂シート2)の2種類の樹脂シートを作製した。
(3)プリプレグの作製
繊維基材としてガラス織布(ユニチカ社製、クロスタイプ♯1017、幅530mm、厚さ15μm、坪量12g/m2)を用い、真空ラミネート装置および熱風乾燥装置によりプリプレグを製造した。
具体的には、ガラス織布の両面に前記樹脂シート1および樹脂シート2がガラス織布の幅方向の中心に位置するように、それぞれ重ね合わせ、0.1MPa(750Torr)の減圧条件下で、80℃のラミネートロールを用いて接合した。
ここで、ガラス織布の幅方向寸法の内側領域においては、樹脂シート1および樹脂シート2の樹脂層を繊維布の両面側にそれぞれ接合するとともに、ガラス織布の幅方向寸法の外側領域においては、樹脂シート1および樹脂シート2の樹脂層同士を接合した。
次いで、上記接合したものを、120℃に設定した横搬送型の熱風乾燥装置内を2分間通すことによって、圧力を作用させることなく加熱処理して、厚さ40μm(T1:17μm、繊維基材:15μm、T2:8μm)のプリプレグを得た。 Example 1
(1) Preparation of varnish 30 parts by weight of dicyclopentadiene type epoxy resin (manufactured by DIC, HP-7200) as epoxy resin, 3 parts by weight of bisphenol F type liquid epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER807), phenol as cyanate resin 14 parts by weight of a novolac-type cyanate resin (manufactured by LONZA, Primaset PT-30), 3 parts by weight of YX6954BH30 manufactured by Mitsubishi Chemical Co. as a phenoxy resin, and 0.2 parts by weight of imidazole (manufactured by Shikoku Kasei Co., Ltd., 2E4MZ) as a curing catalyst The portion was stirred for 60 minutes with a mixed solvent of methyl ethyl ketone and cyclohexanone to dissolve. Further, 0.1 part by weight of N-phenyl-3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-573) as a coupling agent and spherical silica (SO25R, manufactured by Admatechs Co., Ltd., average particle size 0) as an inorganic filler. 0.5 μm) 49.7 parts by weight were added and stirred for 10 minutes with a high-speed stirrer to prepare a resin varnish with a solid content of 65%.
(2) Production of resin sheet The varnish was coated on one side of a PET (polyethylene terephthalate) film having a thickness of 36 μm using a comma coater device, which was dried for 3 minutes with a 160 ° C. drying device, with a substrate. A resin sheet was formed.
Two types of resin sheets having a resin thickness of 22 μm (resin sheet 1) and 13 μm (resin sheet 2) were produced.
(3) Preparation of prepreg A glass woven fabric (manufactured by Unitika Ltd., cross type # 1017, width 530 mm, thickness 15 μm, basis weight 12 g / m 2 ) was used as a fiber substrate, and the prepreg was prepared by a vacuum laminator and a hot air dryer. Manufactured.
Specifically, the
Here, in the inner region of the width direction dimension of the glass woven fabric, the resin layers of the
Next, the joined material is heated for 2 minutes through a horizontal conveying type hot air drying apparatus set at 120 ° C. without applying pressure, and has a thickness of 40 μm (T1: 17 μm, fiber base material). : 15 μm, T2: 8 μm).
(1)ワニスの調製
実施例1と同様に調製した。
(2)樹脂シートの作製
基材上の樹脂厚みを20.5μm(樹脂シート1)と13.5μm(樹脂シート2)に変えた以外は実施例1と同様に作製した。
(3)プリプレグの作製
ガラス織布をクロスタイプ#1015(幅530mm、厚さ17μm、坪量15g/m2)に変えた以外は実施例1と同様に作製した。 Example 2
(1) Preparation of varnish Prepared in the same manner as in Example 1.
(2) Production of Resin Sheet A resin sheet was produced in the same manner as in Example 1 except that the resin thickness on the substrate was changed to 20.5 μm (resin sheet 1) and 13.5 μm (resin sheet 2).
(3) Preparation of prepreg A glass woven fabric was prepared in the same manner as in Example 1 except that the woven cloth was changed to a cloth type # 1015 (width 530 mm, thickness 17 μm, basis weight 15 g / m 2 ).
樹脂組成物を表1に示す樹脂組成に変えた以外は実施例1と同様にワニス、樹脂シート、プリプレグを作製した。表1中、各成分は重量部を示す。 Example 3
A varnish, a resin sheet, and a prepreg were prepared in the same manner as in Example 1 except that the resin composition was changed to the resin composition shown in Table 1. In Table 1, each component represents part by weight.
(1)ワニスの調製
樹脂組成物を表1に示す樹脂組成に変えた以外は実施例1と同様に調製した。表1中、各成分は重量部を示す。
(2)樹脂シートの作製
基材上の樹脂厚みを樹脂シート1、2ともに16μmに変えた以外は実施例1と同様に作製した。
(3)プリプレグの作製
ガラス織布をクロスタイプ#1027(幅530mm、厚さ20μm、坪量20g/m2)に変えた以外は実施例1と同様に作製した。 Example 4
(1) Preparation of varnish It was prepared in the same manner as in Example 1 except that the resin composition was changed to the resin composition shown in Table 1. In Table 1, each component represents part by weight.
(2) Production of Resin Sheet A resin sheet was produced in the same manner as in Example 1 except that the resin thickness on the substrate was changed to 16 μm for both the
(3) Production of prepreg A glass woven fabric was produced in the same manner as in Example 1 except that the woven cloth was changed to cross type # 1027 (width 530 mm, thickness 20 μm, basis weight 20 g / m 2 ).
樹脂組成物を表1に示す樹脂組成に変えた以外は実施例4と同様にワニス、樹脂シート、プリプレグを作製した。表1中、各成分は重量部を示す。 Examples 5 and 6
A varnish, a resin sheet, and a prepreg were prepared in the same manner as in Example 4 except that the resin composition was changed to the resin composition shown in Table 1. In Table 1, each component represents part by weight.
樹脂組成物を表1に示す樹脂組成に変えた以外は実施例1と同様にワニス、樹脂シート、プリプレグを作製した。表1中、各成分は重量部を示す。 Comparative Examples 1 and 2
A varnish, a resin sheet, and a prepreg were prepared in the same manner as in Example 1 except that the resin composition was changed to the resin composition shown in Table 1. In Table 1, each component represents part by weight.
実施例1~5、又は、比較例1、2のプリプレグを用いてIPC-TM-650 Method 2.3.17に準拠して測定した。すなわち、図2で示すように、実施例1~5、又は、比較例1、2のプリプレグを102mm×102mmの正方形にカットし、これを4枚重ね、重量(W0(g))を測定した。そして、プリプレグの最外層の両面には、離型フィルム(製品名:セパニウム20M2C-S、製造元:サン・アルミニウム工業株式会社、サイズ:200mm×240mm)を両面に貼り付けた(図2(a))。その後、2枚のSUS板の間にプリプレグを配置して、171℃、1.38MPaに加熱加圧して、5分間熱板プレスした(図2(b))。ついで、離型フィルムを剥離し、プリプレグの積層方向が高さ方向となるよう径81mmの円柱状にプリプレグを切り抜き(図2(c))、得られた円柱状のプリプレグの重量(W2(g))を測定した。式(1)から樹脂流れを求めた。結果を表1に示す。なお、式(1)中、%は、重量%である。 [Resin flow (% by weight)]
Using the prepregs of Examples 1 to 5 or Comparative Examples 1 and 2, the measurement was performed according to IPC-TM-650 Method 2.3.17. That is, as shown in FIG. 2, the prepregs of Examples 1 to 5 or Comparative Examples 1 and 2 were cut into a square of 102 mm × 102 mm, four of them were stacked, and the weight (W 0 (g)) was measured. did. A release film (product name: Sepanium 20M2C-S, manufacturer: Sun Aluminum Co., Ltd., size: 200 mm × 240 mm) was attached to both sides of the outermost layer of the prepreg (FIG. 2A). ). Thereafter, a prepreg was placed between the two SUS plates, heated to 171 ° C. and 1.38 MPa, and hot-plate pressed for 5 minutes (FIG. 2B). Next, the release film is peeled off, and the prepreg is cut out into a columnar shape having a diameter of 81 mm so that the stacking direction of the prepreg is in the height direction (FIG. 2C), and the weight of the obtained columnar prepreg (W 2 ( g)) was measured. The resin flow was determined from equation (1). The results are shown in Table 1. In the formula (1),% is% by weight.
200mm×200mmにカットした実施例1~4、又は、比較例1、2のプリプレグをニチゴ―・モートン(株)製CVP300のホットプレス装置を用いてプレスし、樹脂はみ出し量を測定した。具体的には、このホットプレス装置の2つの熱板(SUS1.5mm)に挟まれた2枚のゴム板の間に上記実施例又は比較例のプリプレグを戴置し、120℃、2.5MPaの条件で、60秒プレスした。ゴム板は、JIS K 6253 Aに準拠して測定したゴム硬度が60°であり、厚みが3mmのシリコンゴムとした。結果を表1に示す。なお、表1中、「樹脂流れ(ゴム板)(重量%)」の行で結果を示す。 [Resin protrusion amount]
The prepregs of Examples 1 to 4 or Comparative Examples 1 and 2 cut to 200 mm × 200 mm were pressed using a hot press apparatus of CVP300 manufactured by Nichigo-Morton Co., Ltd., and the amount of resin protrusion was measured. Specifically, the prepreg of the above example or comparative example is placed between two rubber plates sandwiched between two hot plates (SUS 1.5 mm) of this hot press apparatus, and the conditions are 120 ° C. and 2.5 MPa. And pressed for 60 seconds. The rubber plate was a silicon rubber having a rubber hardness of 60 ° measured in accordance with JIS K 6253 A and a thickness of 3 mm. The results are shown in Table 1. In Table 1, the results are shown in the row of “resin flow (rubber plate) (% by weight)”.
1.積層板の製造
ニチゴ―・モートン(株)製の2ステージビルドアップラミネーターCVP300を用いて、実施例1~4、比較例1、2のPET基材付きプリプレグから積層板を製造した。具体的には、厚み200μmのELC-4785GS-B(住友ベークライト社製、銅箔12μm)を用いて、ドリル機で所定のところを開孔して、無電解めっきにより、導通を図り、銅箔をエッチングして回路形成面を有するコア層を作製した。また、実施例1~4、比較例1、2のプリプレグを枚葉にカットし、上記CVP300にセットして上記コア層に仮付けし、真空ラミネーター内で120℃、0.7MPa、1分間真空ラミネーションを行い、その後、160℃、0.55MPa、2分間ホットプレスして平滑化した。その後、170℃で硬化した。 [Evaluation]
1. Manufacture of Laminate A laminate was produced from the prepreg with PET base material of Examples 1 to 4 and Comparative Examples 1 and 2 using a 2-stage buildup laminator CVP300 manufactured by Nichigo-Morton. Specifically, using ELC-4785GS-B (Sumitomo Bakelite Co., Ltd., copper foil 12 μm) with a thickness of 200 μm, a predetermined place is opened with a drill machine, and conduction is achieved by electroless plating. Was etched to prepare a core layer having a circuit formation surface. Further, the prepregs of Examples 1 to 4 and Comparative Examples 1 and 2 were cut into single sheets, set on the CVP300, temporarily attached to the core layer, and vacuumed at 120 ° C., 0.7 MPa for 1 minute in a vacuum laminator. Lamination was performed, followed by smoothing by hot pressing at 160 ° C., 0.55 MPa for 2 minutes. Then, it hardened | cured at 170 degreeC.
積層板の断面を走査型電子顕微鏡(SEM)で観察し、回路間に樹脂が埋め込まれているかを確認した。回路間に樹脂が埋め込まれているものを合格とし、回路間にボイド残りがあり、埋め込み不十分なものを不合格とした。結果を表1に示す。表1中、合格は、○とし、不合格は、×で示す。 2. Embeddability in circuit The cross section of the laminate was observed with a scanning electron microscope (SEM) to confirm whether resin was embedded between the circuits. Those in which resin was embedded between the circuits were accepted, and voids remained between the circuits, and those that were insufficiently embedded were rejected. The results are shown in Table 1. In Table 1, the acceptance is indicated by ○, and the rejection is indicated by ×.
積層板の断面を走査型電子顕微鏡(SEM)で観察し、隣接した、銅配線の有る部分と無い部分との厚み差を測定した。
n=10で厚み差を測定し、平均0.8μm未満のものを合格とし、平均0.8μm以上のものを不合格とした。結果を表1に示す。表1中、合格は、○とし、不合格は、×で示す。 3. Thickness variation The cross section of the laminate was observed with a scanning electron microscope (SEM), and the difference in thickness between the adjacent portion with and without the copper wiring was measured.
The difference in thickness was measured at n = 10, and an average of less than 0.8 μm was accepted, and an average of 0.8 μm or more was rejected. The results are shown in Table 1. In Table 1, the acceptance is indicated by ○, and the rejection is indicated by ×.
[1]繊維基材と、前記繊維基材の両面に設けられた樹脂層とを備え、
IPC-TM-650 Method 2.3.17に準拠し、171±3℃、1380±70kPaの条件で5分間加熱加圧して測定された樹脂流れが、15重量%以上50重量%以下である、ビルドアップ用プリプレグ。
[2]対向する一対のゴム板で該プリプレグを挟んだ状態で、120℃、2.5MPaの条件下に加熱及び加圧したとき、平面視で前記繊維基材の外縁からはみ出る前記樹脂層の重量が、前記樹脂層の全体に対して、5重量%以下であり、前記ゴム板が下記(i)~(iii)を満たす、[1]記載のビルドアップ用プリプレグ。
(i)JIS K 6253 Aに準拠して測定したゴム硬度が60°
(ii)厚み3mm
(iii)材質がシリコン
[3]前記樹脂層が、熱硬化性樹脂を含有し、
前記熱硬化性樹脂は、エポキシ樹脂、シアネート樹脂及びマレイミド化合物から選択されるものである、[1]又は[2]記載のビルドアップ用プリプレグ。
[4]ロール状に巻回積層された[1]~[3]いずれかに記載のビルドアップ用プリプレグ。
[5]片面又は両面に支持基材が設けられ、前記支持基材が介在した状態で巻回積層された[4]に記載のビルドアップ用プリプレグ。
[6]前記繊維基材を中心として相対的に厚い樹脂層と相対的に薄い樹脂層とを有する、[1]~[5]いずれかに記載のビルドアップ用プリプレグ。
[7]片面又は両面に金属箔が設けられた[1]~[6]いずれかに記載のビルドアップ用プリプレグ。
[8]前記樹脂層が、熱硬化性樹脂と、充填材と、硬化剤とを含有する樹脂組成物から構成される、[1]~[7]いずれかにに記載のビルドアップ用プリプレグ。
[9]前記熱硬化性樹脂が、エポキシ樹脂及びシアネート樹脂から選択されるものである、[8]に記載のビルドアップ用プリプレグ。
[10]前記樹脂組成物は、前記充填材として、無機充填材を含有する、[8]又は[9]に記載のビルドアップ用プリプレグ。
[11]前記樹脂組成物は、前記硬化剤として、フェノール系硬化剤を含有する、[7]乃至[9]いずれか一項に記載のビルドアップ用プリプレグ。
[12]片面又は両面に回路形成面を有するコア層と、
前記コア層の前記回路形成面に積層されたビルドアップ層と、
を備え、
前記ビルドアップ層は、[1]~[11]いずれかに記載のビルドアップ用プリプレグを硬化して形成したものである、積層板。
[13]前記ビルドアップ用プリプレグが繊維基材を中心として相対的に厚い樹脂層と相対的に薄い樹脂層とを有し、
前記厚い樹脂層が前記回路形成面に積層された、[12]に記載の積層板。
[14][12]又は[13]に記載の積層板と、
前記積層板に実装された半導体素子と、
を備える半導体装置。
[15]片面又は両面に回路形成面を有するコア層の前記回路形成面に、加熱加圧下、ビルドアップ用プリプレグをラミネートするラミネート工程と、
ラミネートした前記ビルドアップ用プリプレグの表面を平滑して積層板を得る平滑化工程と、
を連続的に行う積層板の製造方法であって、
前記ラミネート工程において、対向する一対の金属板で前記コア層と前記ビルドアップ用プリプレグとを挟んだ状態で加熱及び加圧し、
前記ビルドアップ用プリプレグとして、[1]~[11]いずれかに記載のビルドアップ用プリプレグを用いる、積層板の製造方法。
[16] 前記ビルドアップ用プリプレグがロール状に巻回積層されており、
巻回積層されたビルドアップ用プリプレグを搬送するとともに、シート状のコア層を搬送し、前記ラミネート工程、及び、前記平滑化工程を連続的に行う、[15]に記載の積層板の製造方法。
[17]前記平滑化工程において、対向する一対の板状弾性体で前記コア層と前記ビルドアップ用プリプレグを挟んだ状態で加熱及び加圧する、[16]に記載の積層板の製造方法。 Other embodiments of the present invention are exemplified below.
[1] A fiber base and a resin layer provided on both sides of the fiber base,
According to IPC-TM-650 Method 2.3.17, the resin flow measured by heating and pressurizing for 5 minutes under the conditions of 171 ± 3 ° C. and 1380 ± 70 kPa is 15 wt% or more and 50 wt% or less. Pre-preg for build-up.
[2] When the prepreg is sandwiched between a pair of opposing rubber plates and heated and pressurized under the conditions of 120 ° C. and 2.5 MPa, the resin layer protruding from the outer edge of the fiber substrate in plan view The buildup prepreg according to [1], wherein the weight is 5% by weight or less with respect to the entire resin layer, and the rubber plate satisfies the following (i) to (iii):
(I) Rubber hardness measured in accordance with JIS K 6253 A is 60 °
(Ii) Thickness 3mm
(Iii) The material is silicon [3] The resin layer contains a thermosetting resin,
The build-up prepreg according to [1] or [2], wherein the thermosetting resin is selected from an epoxy resin, a cyanate resin, and a maleimide compound.
[4] The prepreg for buildup according to any one of [1] to [3], which is wound and laminated in a roll shape.
[5] The prepreg for buildup according to [4], wherein a support base material is provided on one side or both sides, and is wound and laminated with the support base material interposed.
[6] The prepreg for buildup according to any one of [1] to [5], which has a relatively thick resin layer and a relatively thin resin layer with the fiber base as a center.
[7] The buildup prepreg according to any one of [1] to [6], wherein a metal foil is provided on one side or both sides.
[8] The buildup prepreg according to any one of [1] to [7], wherein the resin layer includes a resin composition containing a thermosetting resin, a filler, and a curing agent.
[9] The prepreg for buildup according to [8], wherein the thermosetting resin is selected from an epoxy resin and a cyanate resin.
[10] The prepreg for buildup according to [8] or [9], wherein the resin composition contains an inorganic filler as the filler.
[11] The prepreg for buildup according to any one of [7] to [9], wherein the resin composition contains a phenolic curing agent as the curing agent.
[12] a core layer having a circuit forming surface on one side or both sides;
A buildup layer laminated on the circuit forming surface of the core layer;
With
The buildup layer is a laminated plate formed by curing the buildup prepreg according to any one of [1] to [11].
[13] The build-up prepreg has a relatively thick resin layer and a relatively thin resin layer with a fiber base as a center,
The laminated board according to [12], wherein the thick resin layer is laminated on the circuit forming surface.
[14] The laminated plate according to [12] or [13];
A semiconductor element mounted on the laminate,
A semiconductor device comprising:
[15] A laminating step of laminating a prepreg for buildup on the circuit forming surface of the core layer having a circuit forming surface on one side or both sides under heat and pressure;
A smoothing step of smoothing the surface of the laminated prepreg for lamination to obtain a laminate;
A method of manufacturing a laminated board that continuously performs
In the laminating step, heating and pressurizing the core layer and the build-up prepreg between a pair of opposing metal plates,
A method for producing a laminated board, wherein the buildup prepreg according to any one of [1] to [11] is used as the buildup prepreg.
[16] The build-up prepreg is wound and laminated in a roll shape,
The method for producing a laminated board according to [15], wherein the build-up prepreg wound and laminated is conveyed, a sheet-like core layer is conveyed, and the laminating step and the smoothing step are continuously performed. .
[17] The method for manufacturing a laminated board according to [16], wherein in the smoothing step, heating and pressurization are performed in a state where the core layer and the buildup prepreg are sandwiched between a pair of opposing plate-like elastic bodies.
Claims (2)
- 繊維基材と、前記繊維基材の両面に設けられた樹脂層とを備え、
IPC-TM-650 Method 2.3.17に準拠し、171±3℃、1380±70kPaの条件で5分間加熱加圧して測定された樹脂流れが、15重量%以上50重量%以下である、ビルドアップ用プリプレグ。 A fiber base and a resin layer provided on both sides of the fiber base;
According to IPC-TM-650 Method 2.3.17, the resin flow measured by heating and pressurizing for 5 minutes under the conditions of 171 ± 3 ° C. and 1380 ± 70 kPa is 15 wt% or more and 50 wt% or less. Pre-preg for build-up. - 繊維基材と、前記繊維基材の両面に設けられた樹脂層とを備えたビルドアップ用プリプレグであって、
IPC-TM-650 Method 2.3.17に準拠し、171±3℃、1380±70kPaの条件で5分間加熱加圧して測定された樹脂流れが、15重量%以上50重量%以下であり、
対向する一対のゴム板で該プリプレグを挟んだ状態で、120℃、2.5MPaの条件下に加熱及び加圧したとき、平面視で前記繊維基材の外縁からはみ出る前記樹脂層の重量が、前記樹脂層の全体に対して、5重量%以下であり、前記ゴム板が下記(i)~(iii)を満たす、ビルドアップ用プリプレグ。
(i)JIS K 6253 Aに準拠して測定したゴム硬度が60°
(ii)厚み3mm
(iii)材質がシリコン A prepreg for buildup comprising a fiber base material and resin layers provided on both sides of the fiber base material,
According to IPC-TM-650 Method 2.3.17, the resin flow measured by heating and pressing for 5 minutes under the conditions of 171 ± 3 ° C. and 1380 ± 70 kPa is 15 wt% or more and 50 wt% or less,
With the prepreg sandwiched between a pair of opposing rubber plates, when heated and pressurized under the conditions of 120 ° C. and 2.5 MPa, the weight of the resin layer protruding from the outer edge of the fiber substrate in plan view is A prepreg for buildup, which is 5% by weight or less based on the entire resin layer, and wherein the rubber plate satisfies the following (i) to (iii):
(I) Rubber hardness measured in accordance with JIS K 6253 A is 60 °
(Ii) Thickness 3mm
(Iii) Material is silicon
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