WO2012121548A2 - 연약패드용 컨디셔너 및 그 제조방법 - Google Patents

연약패드용 컨디셔너 및 그 제조방법 Download PDF

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Publication number
WO2012121548A2
WO2012121548A2 PCT/KR2012/001673 KR2012001673W WO2012121548A2 WO 2012121548 A2 WO2012121548 A2 WO 2012121548A2 KR 2012001673 W KR2012001673 W KR 2012001673W WO 2012121548 A2 WO2012121548 A2 WO 2012121548A2
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WO
WIPO (PCT)
Prior art keywords
conditioner
soft pad
height
substrate
protrusion
Prior art date
Application number
PCT/KR2012/001673
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English (en)
French (fr)
Korean (ko)
Other versions
WO2012121548A3 (ko
Inventor
이세광
김연철
이주한
이종재
Original Assignee
이화다이아몬드공업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이화다이아몬드공업 주식회사 filed Critical 이화다이아몬드공업 주식회사
Priority to JP2013557647A priority Critical patent/JP2014507813A/ja
Priority to US14/003,493 priority patent/US20130344779A1/en
Priority to CN2012800117654A priority patent/CN103403844A/zh
Priority to DE112012000724.7T priority patent/DE112012000724B4/de
Publication of WO2012121548A2 publication Critical patent/WO2012121548A2/ko
Publication of WO2012121548A3 publication Critical patent/WO2012121548A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for

Definitions

  • the present invention relates to a conditioner for a CMP pad used in a chemical mechanical polishing (CMP) process, which is part of a semiconductor device fabrication process. More specifically, a slurry having a low abrasive grain content and / or a relatively low hardness and very high porosity of the pad
  • the present invention relates to a conditioner for a soft pad that can be used in a CMP environment using a porous pad, and a manufacturing method thereof.
  • CMP technology used in semiconductor devices is used to planarize thin films such as insulating films and metal films formed on semiconductor wafers.
  • the slurry used in the CMP process is classified into oxide, tungsten, and Cu.
  • the slurry includes abrasive particles to mechanically polish the wafer.
  • an acidic solution may be added to achieve chemical polishing.
  • abrasive particles are used to promote mechanical wear of the conditioner's diamond particles.
  • the abrasive particles used are mainly silica or ceria, and the content of the abrasive particles varies greatly depending on the type of slurry and the use environment.
  • the slurry usually contains about 1 to 10 wt% of abrasive grains, and is acidic or neutral depending on the type of slurry.
  • the load on the conditioner is 5 to 14 pounds of force, so even if diamond particles are used, the service life of the conditioner is about 5 to 30 hours, due to the wear of the diamond grain tip used as the cutting tip.
  • a distinctive process is the Cu CMP process, which is performed at the end of the wafer finishing CMP process.
  • the Cu CMP process is a very soft pad and has a very low load of less than 3 pounds.
  • the pad used in the Cu CMP process As a representative example of the pad used in the Cu CMP process, a lot of Fujibo pads are used, and the slurry used in the Fujibo pad is a planar slurry, which has a very low process load in terms of conditioner because the abrasive grain content is 1% or less. This process results in a CMP process without requiring much wear resistance at the cutting tip of the conditioner.
  • electrodeposition conditioners among existing CMP pad conditioners cannot be used by easily tearing soft pads or breaking the pore shape of the pad surface by the diamond grain edges and sharp edges of the cutting tip, even if the number of diamonds is designed.
  • the service life of the pad is very short, and the state of the pad cannot be kept constant even during use, so that uniform control of the wafer's removal rate is impossible.
  • a CMP pad conditioner manufactured by coating a diamond thin film by CVD on a plurality of protrusions formed by protruding the surface of a substrate into a predetermined shape has been developed.
  • Korean Patent No. 10-0387954 is provided on the surface of a substrate.
  • a CMP pad conditioner having a structure in which a plurality of polygonal pyramids projecting upward at a uniform height are formed and a diamond layer is deposited by CVD on the surface thereof.
  • the present inventors have made efforts to solve all the disadvantages and problems of the prior art as described above, while solving the problems with the electrodeposition conditioner and the diamond coating conditioner disclosed in the patent, while at the same time using a soft pad conditioner that can be used in Cu CMP process, etc.
  • the present invention has been completed by the development.
  • Another object of the present invention is to provide a conditioner for soft pads and a method of manufacturing the same, which do not need to perform a diamond coating process, so long as the material of the substrate that can be used for manufacturing the conditioner satisfies the wear resistance.
  • Still another object of the present invention is that the cutting tip formed in the conditioner does not include a diamond layer, so that the CVD diamond coating process can be omitted, thereby reducing the manufacturing process and reducing the manufacturing cost. It is to provide a manufacturing method.
  • Another object of the present invention is to eliminate the need for performing the diamond coating process, unlike the conventional diamond-coated CMP pad conditioner, the additional process required for size control after diamond coating can be omitted, so that the failure rate can be reduced soft pad It is to provide a conditioner and a method of manufacturing the same.
  • the present invention is a substrate having a surface having at least one surface; And it provides a soft pad conditioner comprising a plurality of cutting tips protruding upwardly and spaced apart on a part or the whole of the surface.
  • the substrate and the plurality of cutting tips are any one of a cemented carbide material, a ceramic material including SiC or Si 3 N 4 , a composite ceramic material comprising at least one of SiO 2 or Al 2 O 3 as the same material. .
  • the plurality of cutting tips have their top ends made of faces, lines or dots.
  • the overall shape is at least one of a cylinder, a polygonal pillar, a truncated cone or a truncated pyramid.
  • the plurality of cutting tips are the same in one or more of the overall shape, protrusion height and spacing.
  • the soft pad conditioner is used in one or more of the processes in which the load applied in the CMP process is 3 pounds or less, including the Cu CMP process, and the slurry abrasive grain content is 1% or less.
  • the present invention is a method for manufacturing a conditioner for a soft pad according to any one of claims 1 to 6, comprising the steps of: preparing a substrate having a thickness exceeding the height of protrusion of the cutting tip; And a cutting tip forming step of embossing and forming a plurality of protrusions at intervals spaced apart from each other according to a predetermined pattern on one surface of the substrate.
  • the plurality of protrusions formed in the cutting tip forming step is the upper end portion is made of plane, line or dot.
  • the cutting tip forming step is performed by a micromachining method of any one of a cutting wheel, an end mill, a milling cutter, a drill, a tap, and a laser machining in parallel with the etching method, or the etching method or the fine method. It is performed only by one of the machining methods.
  • the etching method is to photolithography the portion of the substrate surface on which the plurality of protrusions are to be formed, and then protrude some or all of the protrusion heights forming the protrusions at spaced intervals by etching. And a step of forming a remaining height when the part of the protrusion height protrudes, the remaining height forming step of forming the remaining height of the part of the protrusion protruding by one of the micromachining methods.
  • the protrusion height of the protrusion projected by the etching is 1 to 50% of the total protrusion height.
  • the surface of the substrate before the cutting tip forming step, further comprises the step of precision grinding and lapping process.
  • the present invention has the following excellent effects.
  • the soft pad conditioner and the manufacturing method of the present invention not only has a structure controlled according to a predetermined pattern so that the material removal rate of the wafer can be stably maintained, but also the cost can be drastically lowered.
  • the soft pad conditioner and the manufacturing method of the present invention does not need to perform a diamond coating process is not limited if the material of the substrate that can be used for the conditioner to meet the wear resistance.
  • the cutting tip formed in the conditioner does not include a diamond layer, the CVD diamond coating process can be omitted, thereby reducing the manufacturing process and reducing the manufacturing cost. This is improved.
  • the soft pad conditioner and the manufacturing method of the present invention there is no need to perform the diamond coating process, unlike the conventional diamond-coated CMP pad conditioner, the additional process required for size control after diamond coating can be omitted. Defective rate can be reduced.
  • FIG. 1 is a graph showing the results of measuring PWR for each conditioner when performing a Cu CMP process using a soft pad conditioner, a known CVD diamond coating conditioner (comparative example), and an electrodeposition conditioner according to an embodiment of the present invention
  • Figure 2 is a surface photograph of a Fujibo pad after the conditioner for each conditioner after performing a Cu CMP process using a soft pad conditioner and a known CVD diamond coating conditioner (comparative) and electrodeposition conditioner according to an embodiment of the present invention.
  • cutting tip used in the present invention means one protrusion formed on the surface of the substrate as a cutting unit, and in some cases, the term “cutting tip” may be used as the same meaning as "protrusion.”
  • the "soft pad” used in the present invention refers to a pad used in a process in which a slurry having a load applied in the CMP process is 3 pounds or less and / or an abrasive grain content of 1% or less is used.
  • the first technical feature of the present invention is not only to have a structure controlled according to a predetermined pattern so that the material removal rate of the wafer can be stably maintained, but also to perform a diamond coating process.
  • the material is not limited if it only meets the wear resistance, so it is in the soft pad conditioner that can lower the cost dramatically.
  • the soft pad conditioner of the present invention includes a substrate having a surface having at least one surface flat; And a plurality of cutting tips protruding upwardly and spaced apart from one or all of the surfaces.
  • the substrate constituting the soft pad conditioner and the plurality of cutting tips are integrally formed to have the same material, but the material is not limited as long as the wear resistance is satisfied, but the ceramic material includes cemented carbide, SiC, or Si 3 N 4 . It is preferably one of the composite ceramic materials including at least one of SiO 2 or Al 2 O 3 .
  • the upper end portion may be made of any surface, line or dot.
  • the overall shape may be any one or more of a cylinder, a polygonal pillar, a truncated cone or a truncated pyramid.
  • the plurality of cutting tips may be formed differently in the overall shape, the height of the protrusion and the distance between the different in accordance with the operator's control intention, or may be formed in different groups, but at least one of the overall shape, the height of the protrusion and the separation interval is the same. It may be desirable to maintain a stable material removal rate of the wafer.
  • the soft pad conditioner configured as described above includes a Cu CMP process requiring precise uniformity, as shown in the experimental example described below, and a process in which a load applied in the CMP process is 3 pounds or less and / or a slurry abrasive particle content of 1% or less. When used in, it has performance equivalent to or better than conventional diamond layer coated CMP pad conditioners.
  • the second technical feature of the present invention is that the cutting tip formed in the conditioner does not include a diamond layer, so that the CVD diamond coating process may be omitted, thereby shortening the manufacturing process and reducing the manufacturing cost.
  • the coated CMP pad conditioner an additional process required for size control after diamond coating can be omitted, thereby reducing the defect rate, and thus, a method for manufacturing a soft pad conditioner having extremely improved productivity.
  • the soft pad conditioner manufacturing method of the present invention comprises the steps of preparing a substrate having a thickness exceeding the height of the protrusion of the cutting tip; And a cutting tip forming step of embossing and forming a plurality of protrusions at intervals spaced apart from each other according to a predetermined pattern on one surface of the substrate.
  • a plurality of protrusions formed in the cutting tip forming step may be formed of a top surface, a line, or a dot
  • the protrusion height, the overall shape of the protrusion, and the separation distance between the plurality of protrusions are not limited as long as they are controlled according to a preset pattern.
  • the cutting tip forming step may be performed by a micromachining method of any one of a cutting wheel, an end mill, a milling cutter, a drill, a tap, and a laser machining in parallel with the etching method, or any one of the etching method and the micromachining method. It may be performed by only one.
  • the etching method includes photolithography of a portion of the substrate surface on which the plurality of protrusions are to be formed, and then protruding part or all of the protrusion heights forming the protrusions at spaced intervals by etching. Both dry etching and wet etching methods of construction can be used.
  • the remaining height forming step of forming the remaining height of the protruding part of the protruding part by any one of the micro machining methods is further included.
  • the cutting tip forming step is performed in parallel with the etching method and the micromachining method, it is preferable to use the etching method first and then the micromachining method.
  • the protruding height of the protruding portion protruding by the etching method is 1 to 50% of the total protruding height of the cutting tip.
  • the protrusion height it may be preferable to further include a step of precision grinding and lapping a surface of the substrate before the cutting tip forming step.
  • a Si 3 N 4 material substrate having a flatness tolerance of 3 mm ⁇ 0.002 mm or less was prepared through a lapping process.
  • a fine machining was performed using a grinding machine.
  • the size of the protrusions was 50 ⁇ m in length, 50 ⁇ m in height, and the number of protrusions was 10000ea for soft pads.
  • Conditioner was prepared.
  • CVD diamond coating conditioner CVD disk
  • the soft pad conditioner, CVD diamond coating conditioner and commercial electrodeposition conditioner obtained in Examples and Comparative Examples were subjected to Cu CMP process using Fujibo pad and planar slurry containing 1% or less of abrasive grain for 31 hours, and PWR for each conditioner. Was measured and the result is shown in FIG.
  • the electrodeposition conditioner was reduced to 50% PWR after 15hr, but the CVD diamond coated conditioner and the soft pad conditioner of the present invention maintained the PWR until more than 30 hours.
  • the electrodeposition conditioner has peeled off the surface of the soft Fujibo pad, so that the PWR can be remarkably dropped, and the surface state of the pad using the CVD diamond coating conditioner and the soft pad conditioner of the present invention is It is almost similar.
  • the electrodeposition conditioner had a large change in the Max-Min value, while the CVD diamond coated conditioner and the soft pad conditioner of the present invention had no large change in the Max-Min value. This seems to show that the electrodeposition conditioner has severely rubbed the pad by some small number of working diamonds.
  • the soft pad conditioner of the present invention when used in a process in which a load applied in the CMP process is 3 pounds or less, including a Cu CMP process, and / or a process in which slurry abrasive grain content is 1% or less, the existing diamond layer is coated. It can be seen that the CMP pad conditioner has the same or better performance.
  • the soft pad conditioner and the CVD diamond coated conditioner obtained in Examples and Comparative Examples were subjected to 10 lbf load for 5hr in a W2000 CMP process using IC 1010, and then the heights of the cutting tips formed on each conditioner before and after the measurement were measured. The results are shown in Table 2.
  • the soft pad conditioner without diamond coating as in the present invention has a high abrasive particle content of about 6% and a high conditioner load, such as W2000 slurry. .

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
PCT/KR2012/001673 2011-03-07 2012-03-07 연약패드용 컨디셔너 및 그 제조방법 WO2012121548A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013557647A JP2014507813A (ja) 2011-03-07 2012-03-07 軟弱パッド用コンディショナーおよびその製造方法
US14/003,493 US20130344779A1 (en) 2011-03-07 2012-03-07 Conditioner for soft pad and method for manufacturing same
CN2012800117654A CN103403844A (zh) 2011-03-07 2012-03-07 用于软垫的调节器及其制造方法
DE112012000724.7T DE112012000724B4 (de) 2011-03-07 2012-03-07 Konditionierer für ein weiches Poliertuch und Herstellungsverfahren hierfür

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110019803A KR101211138B1 (ko) 2011-03-07 2011-03-07 연약패드용 컨디셔너 및 그 제조방법
KR10-2011-0019803 2011-03-07

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WO2012121548A2 true WO2012121548A2 (ko) 2012-09-13
WO2012121548A3 WO2012121548A3 (ko) 2012-12-27

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US (1) US20130344779A1 (de)
JP (1) JP2014507813A (de)
KR (1) KR101211138B1 (de)
CN (1) CN103403844A (de)
DE (1) DE112012000724B4 (de)
WO (1) WO2012121548A2 (de)

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Publication number Priority date Publication date Assignee Title
KR101161015B1 (ko) * 2010-09-10 2012-07-02 신한다이아몬드공업 주식회사 Ｃｍｐ 패드 컨디셔너 및 그 제조방법
KR102304574B1 (ko) 2014-03-21 2021-09-27 엔테그리스, 아이엔씨. 세장형 절삭 에지를 갖는 화학 기계 평탄화 패드 컨디셔너
JP2018032745A (ja) * 2016-08-24 2018-03-01 東芝メモリ株式会社 ドレッサー、ドレッサーの製造方法、及び半導体装置の製造方法

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Also Published As

Publication number Publication date
CN103403844A (zh) 2013-11-20
JP2014507813A (ja) 2014-03-27
DE112012000724B4 (de) 2022-03-31
US20130344779A1 (en) 2013-12-26
WO2012121548A3 (ko) 2012-12-27
KR20120101783A (ko) 2012-09-17
DE112012000724T5 (de) 2013-11-21
KR101211138B1 (ko) 2012-12-11

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