WO2012121045A1 - 接合方法、接合装置及び接合システム - Google Patents
接合方法、接合装置及び接合システム Download PDFInfo
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- WO2012121045A1 WO2012121045A1 PCT/JP2012/054752 JP2012054752W WO2012121045A1 WO 2012121045 A1 WO2012121045 A1 WO 2012121045A1 JP 2012054752 W JP2012054752 W JP 2012054752W WO 2012121045 A1 WO2012121045 A1 WO 2012121045A1
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- substrate
- holding member
- wafer
- bonding
- joining
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B41/00—Arrangements for controlling or monitoring lamination processes; Safety arrangements
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L22/10—Measuring as part of the manufacturing process
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Definitions
- the present invention relates to a bonding method, a bonding apparatus, and a bonding system for bonding substrates having the same planar shape.
- the bonding apparatus includes a chamber that accommodates two wafers arranged vertically (hereinafter, the upper wafer is referred to as an “upper wafer” and the lower wafer is referred to as a “lower wafer”), And a push pin that presses the center portion of the upper wafer, and a spacer that supports the outer periphery of the upper wafer and can be retracted from the outer periphery of the upper wafer.
- the wafers are bonded to each other in a vacuum atmosphere in order to suppress the generation of voids between the wafers. Specifically, first, in a state where the upper wafer is supported by the spacer, the central portion of the upper wafer is pressed by the push pin, and the central portion is brought into contact with the lower wafer. Thereafter, the spacer supporting the upper wafer is retracted, and the entire surface of the upper wafer is brought into contact with the entire surface of the lower wafer and bonded together (Patent Document 1).
- the present invention has been made in view of such points, and an object of the present invention is to inspect whether or not the substrates are bonded to each other and to smoothly perform the processing after the substrates are bonded.
- the present invention is a bonding method for bonding substrates having the same planar shape, the first substrate held by suction on the lower surface of the first holding member, and the first substrate A bonding step of bonding the second substrate adsorbed and held on the upper surface of the second holding member provided below the holding member; and thereafter, a superposed substrate in which the first substrate and the second substrate are bonded A bonding position determination step of measuring an outer diameter and determining the quality of the bonding position of the first substrate and the second substrate based on the measurement result.
- the measurement result Is less than a predetermined threshold it is determined that the bonding position of the first substrate and the second substrate is normal, and when the measurement result is equal to or greater than the predetermined threshold, the first substrate and the second substrate Is determined to be abnormal.
- the outer diameter of the superposed substrate in which the first substrate and the second substrate are bonded is measured, and based on the measurement result, the first substrate and the second substrate.
- the quality of the joining position is determined. That is, it is determined whether or not the first substrate and the second substrate are bonded. For example, when the bonding is normal, the subsequent processing can be appropriately performed on the bonded superposed substrate. On the other hand, for example, when the bonding is abnormal, the subsequent processing for the bonded superposed substrate is stopped and collected. As a result, it is possible to prevent the conveyance failure and the damage of the wafer as in the conventional case, and the subsequent substrate can be processed smoothly.
- a bonding apparatus for bonding substrates having the same planar shape to each other, the first holding member holding the first substrate by suction on the lower surface, and the lower side of the first holding member.
- a second holding member provided on the upper surface for adsorbing and holding the second substrate; a measuring unit for measuring an outer diameter of the superposed substrate on which the first substrate and the second substrate are joined; and a first substrate;
- a control unit that determines whether the second substrate is bonded or not, and the control unit includes a first substrate sucked and held on a lower surface of the first holding member, and a second holding member.
- the joining step of joining the second substrate held by suction on the upper surface, and then measuring the outer diameter of the superposed substrate, and whether or not the joining position of the first substrate and the second substrate is good based on the measurement result The first holding member and the second holding part so as to perform a joining position judging step for judging And controlling the operation of the measurement unit, and in the bonding position determination step, when the measurement result is less than a predetermined threshold, it is determined that the bonding position between the first substrate and the second substrate is normal, and When the measurement result is equal to or greater than a predetermined threshold value, it is determined that the bonding position between the first substrate and the second substrate is abnormal.
- Another aspect of the present invention is a bonding system including a bonding apparatus that bonds substrates having the same planar shape, the bonding apparatus holding a first substrate on the lower surface by suction. And an outer diameter of a second holding member provided below the first holding member and adsorbing and holding the second substrate on the upper surface, and a superposed substrate in which the first substrate and the second substrate are joined.
- a measurement unit that measures, and a control unit that determines whether the first substrate and the second substrate are bonded to each other. The control unit is first held by suction on the lower surface of the first holding member.
- the bonding system includes: Each of the processing station having the bonding apparatus and a plurality of first substrates, second substrates, or superposed substrates can be held, and the first substrate, the second substrate, or the superposed substrate is carried into the processing station.
- a loading / unloading station, and the processing station modifies a surface to which the first substrate or the second substrate is bonded, and a first modified by the surface modifying device.
- the surface of the first substrate or the second substrate is the parent A surface hydrophilizing device, and a transport region for transporting the first substrate, the second substrate, or the superposed substrate to the surface modifying device, the surface hydrophilizing device, and the bonding device.
- substrate are joined.
- the quality of bonding between substrates can be inspected, and the processing after substrate bonding can be performed smoothly.
- FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment.
- FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.
- the wafer disposed on the upper side is referred to as “upper wafer W U ” as the first substrate
- the wafer disposed on the lower side is referred to as “lower wafer W L ” as the second substrate.
- a bonding surface to which the upper wafer W U is bonded is referred to as “front surface W U1 ”
- a surface opposite to the front surface W U1 is referred to as “back surface W U2 ”.
- the bonding surface to which the lower wafer W L is bonded is referred to as “front surface W L1 ”, and the surface opposite to the front surface W L1 is referred to as “back surface WL 2 ”.
- the bonding system 1 by joining the upper wafer W U and the lower wafer W L, to form the overlapped wafer W T as a polymerization substrate.
- the upper wafer W U and the lower wafer W L has the same circular shape in plan view, for example, the outer diameter of the upper wafer W outside diameter and the lower wafer W L of the U is 300mm, respectively.
- the bonding system 1 carries in and out cassettes C U , C L , and C T that can accommodate a plurality of wafers W U and W L and a plurality of superposed wafers W T , respectively, with the outside.
- the loading / unloading station 2 and the processing station 3 including various processing apparatuses that perform predetermined processing on the wafers W U , W L , and the overlapped wafer W T are integrally connected.
- the loading / unloading station 2 is provided with a cassette mounting table 10.
- the cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11.
- the cassette mounting plates 11 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes C U to the outside of the interface system 1, C L, when loading and unloading the C T, a cassette C U, C L, it is possible to place the C T .
- carry-out station 2 a wafer over multiple W U, a plurality of lower wafer W L, and is configured to be held by a plurality of overlapped wafer W T.
- the number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined.
- One of the cassettes may be used for collecting abnormal wafers. That is a cassette a wafer abnormality occurs in the bonding of the upper wafer W U and the lower wafer W L, it can be separated from the other normal overlapped wafer W T by various factors. In the present embodiment, among the plurality of cassettes C T, using a one cassette C T for the recovery of the abnormal wafer, and using other cassettes C T for the accommodation of a normal overlapped wafer W T.
- a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10.
- the wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction.
- the wafer transfer device 22 is also movable in the vertical direction and around the vertical axis ( ⁇ direction), and includes cassettes C U , C L , C T on each cassette mounting plate 11 and a third of the processing station 3 described later.
- the wafers W U and W L and the superposed wafer W T can be transferred between the transition devices 50 and 51 in the processing block G3.
- the processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, G3 provided with various devices.
- a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1)
- Two processing blocks G2 are provided.
- a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (Y direction negative direction side in FIG. 1).
- a surface modification device 30 for modifying the surfaces W U1 and W L1 of the wafers W U and W L is disposed.
- the second processing block G2 includes, for example, a surface hydrophilizing device 40 that hydrophilizes the surfaces W U1 and W L1 of the wafers W U and W L with pure water and cleans the surfaces W U1 and W L1.
- a surface hydrophilizing device 40 that hydrophilizes the surfaces W U1 and W L1 of the wafers W U and W L with pure water and cleans the surfaces W U1 and W L1.
- U, bonding device 41 for bonding the W L are arranged side by side in the horizontal direction of the Y-direction in this order from the carry-out station 2 side.
- the third processing block G3, the wafer W U as shown in FIG. 2, W L, a transition unit 50, 51 of the overlapped wafer W T are provided in two tiers from the bottom in order.
- a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3.
- a wafer transfer device 61 is disposed in the wafer transfer region 60.
- the wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis.
- the wafer transfer device 61 moves in the wafer transfer region 60, and adds wafers W U , W L , and W to predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. You can transfer the overlapping wafer W T.
- the surface modification device 30 has a processing container 70 that can be sealed inside.
- a lower electrode 80 for placing the wafers W U and W L is provided inside the processing container 70.
- the lower electrode 80 is made of a conductive material such as aluminum.
- a drive unit 81 including a motor or the like is provided below the lower electrode 80. The lower electrode 80 can be moved up and down by the drive unit 81.
- a heat medium circulation channel 82 is provided inside the lower electrode 80.
- a heat medium whose temperature is adjusted to an appropriate temperature by a temperature adjusting means (not shown) is introduced into the heat medium circulation passage 82 via a heat medium introduction pipe 83.
- the heat medium introduced from the heat medium introduction pipe 83 circulates in the heat medium circulation channel 82, whereby the lower electrode 80 is adjusted to a desired temperature.
- the heat of the lower electrode 80, the wafer W U which is placed on the upper surface of the lower electrode 80, is transmitted to the W L, the wafer W U, W L is adjusted to a desired temperature.
- the temperature adjustment mechanism for adjusting the temperature of the lower electrode 80 is not limited to the heat medium circulation passage 82, and other mechanisms such as a cooling jacket and a heater can also be used.
- the upper part of the lower electrode 80 is configured as an electrostatic chuck 90 for electrostatically attracting the wafers W U and W L.
- the electrostatic chuck 90 has a structure in which a conductive film 93 such as a copper foil is disposed between two films 91 and 92 made of a polymer insulating material such as polyimide resin.
- the conductive film 93 is connected to a high-voltage power source 96 through a wiring 94 and a filter 95 such as a coil.
- a high voltage set to an arbitrary DC voltage is cut from the high voltage power source 96 by the filter 95 and applied to the conductive film 93.
- W L is brought into electrostatic attraction.
- the upper surface of the lower electrode 80, the wafer W U, a plurality of heat transfer gas supply holes 100 for supplying a heat transfer gas toward the rear surface of the W L is provided. As shown in FIG. 5, the plurality of heat transfer gas supply holes 100 are uniformly arranged in a plurality of concentric circles on the upper surface of the lower electrode 80.
- a heat transfer gas supply pipe 101 is connected to each heat transfer gas supply hole 100.
- the heat transfer gas supply pipe 101 communicates with a gas supply source (not shown), and a heat transfer gas such as helium is transferred from the gas supply source to the upper surface of the lower electrode 80 and the back surfaces W U2 and W of the wafers W U and W L. It is supplied to a minute space formed between L2 . Thereby, heat is efficiently transmitted from the upper surface of the lower electrode 80 to the wafers W U and W L.
- the wafer W U if sufficient heat is efficiently transferred to W L may be omitted heat transfer gas supply holes 100 and the heat transfer gas supply pipe 101.
- an annular focus ring 102 is disposed around the upper surface of the lower electrode 80, the wafer W U which is placed on the upper surface of the lower electrode 80, so as to surround the outer periphery of W L.
- the focus ring 102 is made of an insulating or conductive material that does not attract reactive ions, and acts so that the reactive ions are effectively incident only on the inner wafers W U and W L.
- An exhaust ring 103 having a plurality of baffle holes is disposed between the lower electrode 80 and the inner wall of the processing vessel 70. By the exhaust ring 103, the atmosphere in the processing container 70 is uniformly exhausted from the processing container 70.
- a power feeding rod 104 made of a hollow conductor is connected to the lower surface of the lower electrode 80.
- a first high-frequency power source 106 is connected to the power feed rod 104 via a matching unit 105 made of, for example, a blocking capacitor.
- a high frequency voltage of 13.56 MHz is applied to the lower electrode 80 from the first high frequency power supply 106.
- An upper electrode 110 is disposed above the lower electrode 80.
- the upper surface of the lower electrode 80 and the lower surface of the upper electrode 110 are arranged in parallel with each other with a predetermined distance therebetween. A distance between the upper surface of the lower electrode 80 and the lower surface of the upper electrode 110 is adjusted by the driving unit 81.
- a second high frequency power source 112 is connected to the upper electrode 110 via a matching unit 111 made of, for example, a blocking capacitor.
- a high frequency voltage of 100 MHz is applied to the upper electrode 110 from the second high frequency power supply 112.
- the high frequency voltage is applied to the lower electrode 80 and the upper electrode 110 from the first high frequency power source 106 and the second high frequency power source 112, thereby generating plasma in the processing container 70.
- a high voltage power supply 96 that applies a high voltage to the conductive film 93 of the electrostatic chuck 90, a first high frequency power supply 106 that applies a high frequency voltage to the lower electrode 80, and a second high frequency power supply that applies a high frequency voltage to the upper electrode 110. 112 is controlled by the control part 300 mentioned later.
- a hollow portion 120 is formed inside the upper electrode 110.
- a gas supply pipe 121 is connected to the hollow portion 120.
- the gas supply pipe 121 communicates with a gas supply source 122 that stores processing gas therein.
- the gas supply pipe 121 is provided with a supply device group 123 including a valve for controlling the flow of the processing gas, a flow rate adjusting unit and the like. Then, the flow rate of the processing gas supplied from the gas supply source 122 is controlled by the supply device group 123 and is introduced into the hollow portion 120 of the upper electrode 110 via the gas supply pipe 121.
- oxygen gas, nitrogen gas, argon gas or the like is used as the processing gas.
- a baffle plate 124 for promoting uniform diffusion of the processing gas is provided in the hollow portion 120.
- the baffle plate 124 is provided with a large number of small holes.
- a large number of gas jets 125 for ejecting a processing gas from the hollow portion 120 into the processing container 70 are formed.
- a suction port 130 is formed below the processing container 70.
- An intake pipe 132 that communicates with a vacuum pump 131 that reduces the atmosphere inside the processing container 70 to a predetermined degree of vacuum is connected to the intake port 130.
- the elevating pin is inserted through a through hole (not shown) formed in the lower electrode 80 and can protrude from the upper surface of the lower electrode 80.
- the surface hydrophilizing device 40 has a processing container 150 capable of sealing the inside.
- the side surface of the wafer transfer area 60 side of the processing chamber 150, the wafer W U, the transfer port 151 of the W L is formed as shown in FIG. 7, the opening and closing a shutter 152 is provided to the out port 151.
- a spin chuck 160 that holds and rotates the wafers W U and W L is provided at the center of the processing container 150 as shown in FIG.
- the spin chuck 160 has a horizontal upper surface, and the upper surface is, for example, the wafer W U, suction port for sucking the W L (not shown) is provided. By suction from the suction port, the wafers W U and W L can be sucked and held on the spin chuck 160.
- the spin chuck 160 has a chuck drive unit 161 provided with, for example, a motor, and can be rotated at a predetermined speed by the chuck drive unit 161.
- the chuck driving unit 161 is provided with an elevating drive source such as a cylinder, and the spin chuck 160 can be moved up and down.
- the cup 162 mentioned later may be raised / lowered freely.
- a cup 162 that receives and collects the liquid scattered or dropped from the wafers W U and W L.
- a discharge pipe 163 for discharging the collected liquid
- an exhaust pipe 164 for evacuating and exhausting the atmosphere in the cup 162.
- a rail 170 extending along the Y direction is formed on the negative side of the cup 162 in the X direction (downward direction in FIG. 7).
- the rail 170 is formed from the outside of the cup 162 on the Y direction negative direction (left direction in FIG. 7) to the outside on the Y direction positive direction (right direction in FIG. 7).
- a nozzle arm 171 and a scrub arm 172 are attached to the rail 170.
- the nozzle arm 171, pure water nozzle 173 is supported for supplying pure water to the wafer W U, W L as shown in FIGS.
- the nozzle arm 171 is movable on the rail 170 by a nozzle driving unit 174 shown in FIG.
- the pure water nozzle 173 can move from the standby unit 175 installed on the outer side of the cup 162 on the positive side in the Y direction to the upper part of the center of the wafers W U and W L in the cup 162.
- the nozzle arm 171 can be moved up and down by a nozzle driving unit 174, and the height of the pure water nozzle 173 can be adjusted.
- a supply pipe 176 that supplies pure water to the pure water nozzle 173 is connected to the pure water nozzle 173.
- the supply pipe 176 communicates with a pure water supply source 177 that stores pure water therein.
- the supply pipe 176 is provided with a supply device group 178 including a valve for controlling the flow of pure water, a flow rate adjusting unit, and the like.
- a scrub cleaning tool 180 is supported on the scrub arm 172. At the tip of the scrub cleaner 180, for example, a plurality of thread-like or sponge-like brushes 180a are provided.
- the scrub arm 172 is movable on the rail 170 by a cleaning tool driving unit 181 shown in FIG. 7, and the scrub cleaning tool 180 is moved from the outside of the cup 162 in the negative Y direction side to the wafer W U in the cup 162. it can be moved to above the central portion of the W L. Further, the scrub arm 172 can be moved up and down by the cleaning tool driving unit 181, and the height of the scrub cleaning tool 180 can be adjusted.
- the scrub cleaning tool 180 is not limited to this embodiment, and may be a two-fluid spray nozzle or a jig that performs megasonic cleaning, for example.
- the pure water nozzle 173 and the scrub cleaning tool 180 are supported by separate arms, but may be supported by the same arm. Further, the pure water nozzle 173 may be omitted and pure water may be supplied from the scrub cleaning tool 180. Further, the cup 162 may be omitted, and a discharge pipe that discharges liquid to the bottom surface of the processing container 150 and an exhaust pipe that exhausts the atmosphere in the processing container 150 may be connected. Further, in the surface hydrophilizing device 40 having the above configuration, an antistatic ionizer (not shown) may be provided.
- the bonding apparatus 41 includes a processing container 190 that can seal the inside.
- the side surface of the wafer transfer area 60 side of the processing vessel 190, the wafer W U, W L, the transfer port 191 of the overlapped wafer W T is formed, close shutter 192 is provided to the out port 191.
- the inside of the processing container 190 is divided into a transport region T1 and a processing region T2 by an inner wall 193.
- the loading / unloading port 191 described above is formed on the side surface of the processing container 190 in the transfer region T1.
- a loading / unloading port 194 for the wafers W U and W L and the overlapped wafer W T is formed on the inner wall 193.
- a transition 200 for temporarily placing the wafers W U and W L and the superposed wafer W T is provided on the positive side in the X direction of the transfer region T1.
- the transition 200 is formed in, for example, two stages, and any two of the wafers W U , W L , and the superposed wafer W T can be placed at the same time.
- a wafer transfer body 202 that is movable on a transfer path 201 extending in the X direction is provided. As shown in FIGS. 8 and 9, the wafer transfer body 202 is also movable in the vertical direction and the vertical axis, and the wafers W U , W in the transfer area T1 or between the transfer area T1 and the processing area T2 are used. L, the polymerization wafer W T can be conveyed.
- the transfer path 201 and the wafer transfer body 202 constitute a transfer mechanism.
- Position adjusting mechanism 210 that adjusts the horizontal direction of the wafers W U and W L is provided on the X direction negative direction side of the transfer region T1.
- Position adjusting mechanism 210 includes a base 211, as shown in FIG. 10, the wafer W U, W L and a holding portion 212 for holding and rotating suction, detection for detecting a position of the notch portion of the wafer W U, W L Part 213. Then, the position adjusting mechanism 210, the wafer W U sucked and held by the holding portion 212, the detection unit 213 while rotating the W L by detecting the position of the notch portion of the wafer W U, W L, the notch Are adjusted to adjust the horizontal orientation of the wafers W U and W L.
- inverting mechanism 220 which moves between the transfer region T1 and the processing region T2, to and reverses the front and rear surfaces of the upper wafer W U is provided.
- Inverting mechanism 220 has a holding arm 221 which holds the upper wafer W U as shown in FIG. 11.
- the suction pads 222 held horizontally by suction on the wafer W U is provided.
- the holding arm 221 is supported by the first driving unit 223.
- the first driving unit 223 By the first drive unit 223, the holding arm 221 can be rotated around the horizontal axis and can be expanded and contracted in the horizontal direction.
- a second driving unit 224 is provided below the first driving unit 223.
- the first drive unit 223 can rotate about the vertical axis and can be moved up and down in the vertical direction.
- the second drive unit 224 is attached to a rail 225 extending in the Y direction shown in FIGS.
- the rail 225 extends from the processing area T2 to the transport area T1.
- the second driving unit 224 allows the reversing mechanism 220 to move between the position adjusting mechanism 210 and an upper chuck 230 described later along the rail 225.
- the inverting mechanism 220 also functions as a transport mechanism for transporting the wafer W U, W L, the overlapped wafer W T.
- the configuration of the inverting mechanism 220 is not limited to the configuration of the above embodiment, it is sufficient to invert the front and rear surfaces of the upper wafer W U.
- the reversing mechanism 220 may be provided in the processing region T2. Further, a reversing mechanism may be added to the wafer transport body 202, and another transport means may be provided at the position of the reversing mechanism 220. Further, a reversing mechanism may be added to the position adjusting mechanism 210, and another conveying unit may be provided at the position of the reversing mechanism 220.
- the processing region T2 the upper chuck 230 as a first holding member for sucking and holding the upper wafer W U at the lower surface as shown in FIGS. 8 and 9, the suction holding and mounting the lower wafer W L with the upper surface
- a lower chuck 231 as a second holding member.
- the lower chuck 231 is provided below the upper chuck 230 and is configured to be disposed so as to face the upper chuck 230. That is, the lower wafer W L held by the wafer W U and the lower chuck 231 on which is held in the upper chuck 230 is adapted to be placed opposite.
- the upper chuck 230 is supported by a support member 232 provided on the ceiling surface of the processing container 190.
- the support member 232 supports the outer peripheral portion of the upper surface of the upper chuck 230.
- a chuck driving unit 234 is provided below the lower chuck 231 via a shaft 233.
- the chuck driving unit 234 By the chuck driving unit 234, the lower chuck 231 can be moved up and down in the vertical direction and can be moved in the horizontal direction. Further, the lower chuck 231 is rotatable about the vertical axis by the chuck driving unit 234.
- Below the lower chuck 231, the lift pins for lifting and supporting the lower wafer W L from below (not shown) is provided below the lower chuck 231.
- the elevating pins are inserted through through holes (not shown) formed in the lower chuck 231 and can protrude from the upper surface of the lower chuck 231.
- the shaft 233 and the chuck drive unit 234 constitute an elevating mechanism.
- the upper chuck 230 is divided into a plurality of, for example, three regions 230a, 230b, and 230c. These regions 230a, 230b, and 230c are provided in this order from the center of the upper chuck 230 toward the outer periphery as shown in FIG.
- the region 230a has a circular shape in plan view, and the regions 230b and 230c have an annular shape in plan view.
- Each region 230a, 230b, the 230c, the suction pipe 240a for sucking and holding the upper wafer W U as shown in FIG. 12, 240b, 240c are provided independently.
- Different vacuum pumps 241a, 241b, 241c as suction mechanisms are connected to the suction tubes 240a, 240b, 240c, respectively.
- the suction pipes 240a, 240b, and 240c are provided with pressure measuring units 242a, 242b, and 242c that measure the pressure inside the suction pipes 240a, 240b, and 240c, respectively.
- the three regions 230a, 230b, and 230c described above may be referred to as a first region 230a, a second region 230b, and a third region 230c, respectively.
- the suction tubes 240a, 240b, and 240c may be referred to as a first suction tube 240a, a second suction tube 240b, and a third suction tube 240c, respectively.
- the vacuum pumps 241a, 241b, and 241c may be referred to as a first vacuum pump 241a, a second vacuum pump 241b, and a third vacuum pump 241c, respectively.
- the pressure measurement units 242a, 242b, and 242c may be referred to as a first pressure measurement unit 242a, a second pressure measurement unit 242b, and a third pressure measurement unit 242c, respectively.
- a through hole 243 that penetrates the upper chuck 230 in the thickness direction is formed at the center of the upper chuck 230.
- Central portion of the upper chuck 230 corresponds to the central portion of the upper wafer W U which is attracted and held on the upper chuck 230.
- the pushing pin 251 of the pushing member 250 mentioned later is penetrated by the through-hole 243. As shown in FIG.
- the pushing member 250 has a cylinder structure, and includes a pushing pin 251 and an outer cylinder 252 that serves as a guide when the pushing pin 251 moves up and down.
- the push pin 251 can be moved up and down in the vertical direction through the through hole 243 by, for example, a drive unit (not shown) incorporating a motor.
- the pressing member 250, the wafer W U to be described later, at the time of bonding of W L, can be pressed by contacting the center portion of the center and lower wafer W L of the upper wafer W U.
- the upper chuck 230, the upper imaging member 253 for imaging the surface W L1 of the lower wafer W L is provided.
- the upper imaging member 253 for example, a wide-angle CCD camera is used.
- the upper imaging member 253 may be provided on the lower chuck 231.
- the lower chuck 231 is divided into a plurality of, for example, two regions 231a and 231b. These regions 231a and 231b are provided in this order from the center of the lower chuck 231 toward the outer periphery.
- the region 231a has a circular shape in plan view
- the region 231b has an annular shape in plan view.
- Each region 231a, the 231b, the suction pipe 260a for sucking and holding the lower wafer W L as shown in FIG. 12, 260b are provided independently.
- Different vacuum pumps 261a and 261b are connected to the suction pipes 260a and 260b, respectively. Therefore, the lower chuck 231, each region 231a, and is capable of setting the vacuum of the lower wafer W L per 231b.
- the outer peripheral portion of the lower chuck 231, the wafer W U, W L, or jump out from the overlapped wafer W T is the lower chuck 231, the stopper member 262 to prevent the sliding is provided.
- the stopper member 262, the top portion extends in the vertical direction so as to be positioned above the overlapped wafer W T on at least a lower chuck 231. Further, as shown in FIG. 14, the stopper member 262 is provided at a plurality of places, for example, five places on the outer peripheral portion of the lower chuck 231.
- the lower chuck 231 is provided with a lower imaging member 263 that images the surface W U1 of the upper wafer W U as shown in FIG.
- a lower imaging member 263 that images the surface W U1 of the upper wafer W U as shown in FIG.
- the lower imaging member 263 may be provided on the lower chuck 231.
- Measuring unit 270 includes an imaging member 271 for imaging the outer peripheral portion of the overlapped wafer W T.
- a micro camera is used as the imaging member 271.
- the imaging member 271 is movable in the horizontal direction by a moving mechanism (not shown).
- the above joining system 1 is provided with a control unit 300 as shown in FIG.
- the control unit 300 is a computer, for example, and has a program storage unit (not shown).
- the program storage unit stores a program for controlling processing of the wafers W U and W L and the overlapped wafer W T in the bonding system 1.
- the program storage unit also stores a program for controlling operations of driving systems such as the above-described various processing apparatuses and transfer apparatuses to realize later-described wafer bonding processing in the bonding system 1. Further, the program storage unit also stores a program for determining whether or not the wafers W U and W L are bonded in the bonding apparatus 41.
- the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 300 from the storage medium H.
- a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 300 from the storage medium H.
- FIG. 15 is a flowchart showing an example of main steps of the wafer bonding process.
- the cassette C U, the cassette C L accommodating the lower wafer W L of the plurality, and the empty cassette C T is a predetermined cassette mounting plate 11 of the carry-out station 2 accommodating the wafers W U on the plurality Placed on. Thereafter, the upper wafer W U in the cassette C U is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 of the third processing block G3 in the processing station 3.
- the upper wafer W U is transferred to the surface modification apparatus 30 of the first processing block G1 by the wafer transfer apparatus 61.
- Surface modifying apparatus 30 upper wafer W U carried into is placed transferred from the wafer transfer unit 61 on the upper surface of the lower electrode 80. Thereafter, the wafer transfer device 61 leaves the surface modification device 30 and the gate valve 72 is closed.
- the vacuum pump 131 is operated, and the atmosphere inside the processing container 70 is reduced in pressure to a predetermined degree of vacuum, for example, 6.7 Pa to 66.7 Pa (50 mTorr to 500 mTorr) through the air inlet 130. Then, processing on the wafer W U as described below, the atmosphere in the processing chamber 70 is maintained at the predetermined degree of vacuum.
- a predetermined degree of vacuum for example, 6.7 Pa to 66.7 Pa (50 mTorr to 500 mTorr) through the air inlet 130.
- a high voltage set to, for example, a DC voltage of 2500 V is applied from the high voltage power source 96 to the conductive film 93 of the electrostatic chuck 90.
- the upper wafer W U is electrostatically adsorbed on the upper surface of the lower electrode 80.
- the upper wafer W U electrostatically adsorbed on the lower electrode 80 is maintained at a predetermined temperature, for example, 20 ° C. to 30 ° C. by the heat medium in the heat medium circulation channel 82.
- the processing gas supplied from the gas supply source 122 is uniformly supplied into the processing vessel 70 from the gas outlet 125 on the lower surface of the upper electrode 110.
- a high frequency voltage of 13.56 MHz, for example is applied from the first high frequency power source 106 to the lower electrode 80, and a high frequency voltage of, for example, 100 MHz is applied from the second high frequency power source 112 to the upper electrode 110.
- an electric field is formed between the upper electrode 110 and the lower electrode 80, and the processing gas supplied into the processing container 70 is turned into plasma by the electric field.
- the surface W U1 of the upper wafer W U on the lower electrode 80 is modified by the plasma of the processing gas (hereinafter sometimes referred to as “processing plasma”), and organic substances on the surface W U1 are removed. Is done.
- the oxygen gas plasma in the processing plasma mainly contributes to the removal of organic substances on the surface W U1 .
- the oxygen gas plasma can promote the oxidation of the surface W U1 of the upper wafer W U , that is, the hydrophilization.
- the oxygen gas plasma in the processing plasma has a certain amount of high energy, and organic substances on the surface W U1 are positively (physically) removed by the oxygen gas plasma.
- the plasma of oxygen gas has an effect of removing residual moisture contained in the atmosphere in the processing container 70. In this way, the surface W U1 of the upper wafer W U is modified by the processing plasma (step S1 in FIG. 15).
- the upper wafer W U is transferred to a surface hydrophilizing apparatus 40 of the second processing block G2 by the wafer transfer apparatus 61.
- Surface hydrophilizing device wafer after being carried into the 40 W U is the passed suction holding the wafer transfer apparatus 61 to the spin chuck 160.
- the pure water nozzle 173 of the standby unit 175 is moved to above the center of the upper wafer W U by the nozzle arm 171, and the scrub cleaning tool 180 is moved onto the upper wafer W U by the scrub arm 172.
- the upper wafer W U by the spin chuck 160, for supplying pure water onto the upper wafer W U from the pure water nozzle 173.
- hydroxyl groups adhere to the surface W U1 of the upper wafer W U , and the surface W U1 is hydrophilized.
- the surface W U1 of the upper wafer W U is cleaned by pure water from the pure water nozzle 173 and the scrub cleaning tool 180 (step S2 in FIG. 15).
- the upper wafer W U is transferred to the bonding apparatus 41 of the second processing block G2 by the wafer transfer apparatus 61.
- Upper wafer W U which is carried into the joining device 41 is conveyed to the position adjusting mechanism 210 by the wafer transfer body 202 via the transition 200.
- the position adjusting mechanism 210, the horizontal orientation of the upper wafer W U is adjusted (step S3 in FIG. 15).
- the upper wafer W U is transferred from the position adjusting mechanism 210 to the holding arm 221 of the inverting mechanism 220. Subsequently, in transfer region T1, by reversing the holding arm 221, the front and back surfaces of the upper wafer W U is inverted (step S4 in FIG. 15). That is, the surface W U1 of the upper wafer W U is directed downward. Incidentally, reversal of the front and rear surfaces of the upper wafer W U may be performed during movement of the reversing mechanism 220 to be described later.
- the reversing mechanism 220 is moved to the upper chuck 230 side, the upper wafer W U is transferred from the inverting mechanism 220 in the upper chuck 230.
- Upper wafer W U, the back surface W U2 is held by suction to the upper chuck 230 (step S5 in FIG. 15).
- Upper wafer W U the process waits at the upper chuck 230 to the lower wafer W L is transported to the bonding apparatus 41 described later.
- the processing of the lower wafer W L Following the on wafer W U is performed.
- the lower wafer W L in the cassette C L is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 in the processing station 3.
- Step S6 in FIG. 15 modification of the surface W L1 of the lower wafer W L in step S6 is the same as step S1 of the aforementioned.
- step S7 hydrophilic and cleaning of the surface W L1 of the lower wafer W L in step S7, to omit the detailed description is the same as step S2 of the above-described.
- the lower wafer W L is transported to the bonding apparatus 41 by the wafer transfer apparatus 61.
- Lower wafer W L which is transported to the bonding unit 41 is conveyed to the position adjusting mechanism 210 by the wafer transfer body 202 via the transition 200. Then the position adjusting mechanism 210, the horizontal orientation of the lower wafer W L are adjusted (step S8 in FIG. 15).
- the lower wafer W L is transferred to the lower chuck 231 by the wafer transfer body 202, it is attracted and held by the lower chuck 231 (step S9 in FIG. 15).
- all of the vacuum pumps 261a actuates the 261b, all the regions 231a of the lower chuck 231, in 231b, are evacuated lower wafer W L.
- the surface W L1 of the lower wafer W L is to face upwards, the back surface W L2 of the lower wafer W L is sucked and held by the lower chuck 231.
- a plurality of predetermined reference points A for example, four or more reference points A are formed on the surface W L1 of the lower wafer W L , and similarly, predetermined on the surface W U1 of the upper wafer W U.
- a plurality of, for example, four or more reference points B are formed.
- these reference points A and B for example, predetermined patterns formed on the wafers W L and W U are used, respectively. Then, by moving the upper imaging member 253 in the horizontal direction, the surface W L1 of the lower wafer W L is imaged.
- the lower imaging member 263 is moved in the horizontal direction, and the surface W U1 of the upper wafer W U is imaged. Thereafter, the position of the reference point A of the lower wafer W L to an upper imaging member 253 is displayed in the image captured, and the position of the reference point B of the wafer W U on the lower imaging member 263 is displayed in the image captured Consistently, the horizontal position of the lower wafer W L by the lower chuck 231 (including the horizontal direction) is adjusted. That is, the chuck drive unit 234 to move the lower chuck 231 in the horizontal direction is adjusted horizontal position of the lower wafer W L. Horizontal position of the upper wafer W U and the lower wafer W L is adjusted in this way (step S10 in FIG. 15).
- the horizontal direction of the wafers W U and W L is adjusted by the position adjusting mechanism 210 in steps S3 and S8, but fine adjustment is performed in step S10.
- the predetermined patterns formed on the wafers W L and W U are used as the reference points A and B.
- other reference points can be used.
- the outer peripheral portion and the notch portion of the wafers W L and W U can be used as the reference points.
- the chuck drive unit 234 raises the lower chuck 231 as shown in FIG. 17, to place the lower wafer W L to a predetermined position.
- the arrangement distance D 1 is a predetermined distance, the lower wafer W L so for example, as 50 ⁇ m between the surface W U1 of the surface W L1 and the upper wafer W U of the lower wafer W L.
- Vertical position of the upper wafer W U and the lower wafer W L is adjusted in this way (step S11 in FIG. 15).
- step S5 ⁇ step S11, all areas 230a of the upper chuck 230, 230b, in 230c, are evacuated upper wafer W U.
- step S9 all areas 231a of the lower chuck 231, in 231b, are evacuated lower wafer W L.
- the bonding is started between the central portion of the central portion and the lower wafer W L of the upper wafer W U which pressed (thick line portion in FIG. 18). That is, since the surface W U1 of the upper wafer W U and the surface W L1 of the lower wafer W L are respectively modified in steps S1 and S6, first, van der Waals force is generated between the surfaces W U1 and W L1 , The surfaces W U1 and W L1 are joined to each other. Thereafter, since the surface W U1 of the upper wafer W U and the surface W L1 of the lower wafer W L have been hydrophilized in steps S2 and S7, respectively, the hydrophilic groups between the surfaces W U1 and W L1 are hydrogen-bonded. U1 and WL1 are firmly joined to each other.
- the pushing member 250 is raised to the upper chuck 230 as shown in FIG.
- the suction pipe 260a in the lower chuck 231 to stop the evacuation of the lower wafer W L from 260b, stopping the suction and holding of the lower wafer W L by the lower chuck 231.
- the upper wafer W U to the upper chuck 230 remains to determine the quality of adhesion of the upper wafer W U and the lower wafer W L.
- the lower chuck 231 is lowered and placed at a predetermined position.
- the arrangement interval D 2 is a distance between the lower surface and the upper surface of the lower chuck 231 of the upper chuck 230, for example, 50 [mu] m ⁇ 500 [mu] m, the lower wafer W L as more preferably a 100 [mu] m.
- the vacuum pump 241a, 241b operates the 241c, performs the suction pipe 240a, 240b, through 240c, all the regions 230a of the upper chuck 230, 230b, evacuation with respect to the upper wafer W U in 230c.
- the pressure measuring units 242a, 242b, and 242c measure the pressures inside the suction tubes 240a, 240b, and 240c.
- the pressure measuring unit 242a, 242b determines the quality of the adhesion of the upper wafer W U and the lower wafer W L (step S14 in FIG. 15).
- a predetermined threshold for example, ⁇ 60 Pa ( ⁇ 450 mTorr), for example, 10 mTorr to ⁇ 450 mTorr, as shown in FIG. the upper wafer W U is not left, it is determined that the adhesion of the upper wafer W U and the lower wafer W L is normal.
- all of the suction pipe 240a, 240b, the pressure inside the 240c is larger than a predetermined threshold value, the adhesion of the upper wafer W U and the lower wafer W L is determined to be normal.
- the pressure inside each suction tube 240a, 240b, 240c is measured as ⁇ 53 Pa ( ⁇ 400 mTorr)
- the upper wafer W U does not remain on the upper chuck 230.
- the pressure inside the suction tubes 240a, 240b, 240c is a predetermined threshold value, for example, ⁇ 60 Pa ( ⁇ 450 mTorr) or less, for example, ⁇ 760 mTorr to ⁇ 450 mTorr, the upper wafer W is placed on the upper chuck 230 as shown in FIG. U has remained, it is determined that the adhesion of the upper wafer W U and the lower wafer W L is abnormal.
- these suction tubes 240a, 240b, of 240c, one suction pipe 240a, 240b, when the pressure of 240c is below a predetermined threshold value, the adhesion of the upper wafer W U and the lower wafer W L is abnormal Determined. Specifically, for example, when the pressure inside each suction tube 240a, 240b, 240c is measured to be ⁇ 100 Pa ( ⁇ 750 mTorr), the upper wafer W U remains on the upper chuck 230.
- the wafer W U and the lower wafer W L on which the adhesive is determined to be abnormal in step S14 are carried to the transition unit 51 by the wafer transfer apparatus 61, respectively, by the wafer transfer apparatus 22 of the subsequent unloading station 2 given is conveyed in a cassette C T of the cassette mounting plate 11 is recovered.
- the overlapped wafer W T that bonding of the upper wafer W U and the lower wafer W L is determined to be normal in step S14, determines the acceptability of bonding strength of the upper wafer W U and the lower wafer W L .
- the lower chuck 231 is raised and arranged at a predetermined position.
- the arrangement interval D 3 is the predetermined distance between the upper surface of the lower surface and the lower chuck 231 of the upper chuck 230, for example, 50 [mu] m ⁇ 500 [mu] m, the lower wafer W L as more preferably a 100 [mu] m.
- the vacuum pump 241a, 241b operates the 241c, performs the suction pipe 240a, 240b, through 240c, all the regions 230a of the upper chuck 230, 230b, evacuation with respect to the upper wafer W U in 230c. Also, all the regions 231a of the lower chuck 231, the vacuum for 231b under the wafer W L performed. Thereafter, as shown in FIGS. 25 and 26, the lower chuck 231 is lowered while vacuuming is performed in the areas 230a, 230b, and 230c of the upper chuck 230.
- the pressure measuring units 242a, 242b, and 242c measure the pressures inside the suction tubes 240a, 240b, and 240c.
- the pressure measuring unit 242a, 242b on the basis of the measurement results in 242c, determining the acceptability of bonding strength of the upper wafer W U and the lower wafer W L (step S15 in FIG. 15).
- each suction tube 240a, 240b, 240c is greater than a predetermined threshold, for example, ⁇ 60 Pa ( ⁇ 450 mTorr), for example, 10 mTorr to ⁇ 450 mTorr
- a predetermined threshold for example, ⁇ 60 Pa ( ⁇ 450 mTorr), for example, 10 mTorr to ⁇ 450 mTorr
- the upper chuck 230 is shown in FIG. It determines the upper wafer W U is not held by suction, and the bonding strength of the upper wafer W U and the lower wafer W L is normal.
- all of the suction pipe 240a, 240b, when the pressure inside the 240c is greater than a predetermined threshold value, the bonding strength of the upper wafer W U and the lower wafer W L is determined to be normal.
- the pressure inside the suction pipes 240a, 240b, 240c is a predetermined threshold value, for example, ⁇ 60 Pa ( ⁇ 450 mTorr) or less, for example, ⁇ 760 mTorr to ⁇ 450 mTorr, the upper wafer W is placed on the upper chuck 230 as shown in FIG. U are sucked and held, it determines the bonding strength of the upper wafer W U and the lower wafer W L is abnormal.
- a predetermined threshold value for example, ⁇ 60 Pa ( ⁇ 450 mTorr) or less, for example, ⁇ 760 mTorr to ⁇ 450 mTorr
- step S15 the wafer W U and the lower wafer W L on the bonding strength is determined to be abnormal in step S15 is transferred to the transition unit 51 by the wafer transfer apparatus 61, respectively, by the wafer transfer apparatus 22 of the subsequent unloading station 2 It is recovered and is conveyed in a cassette C T of predetermined cassette mounting plate 11.
- the overlapped wafer W T that bonding strength of the upper wafer W U and the lower wafer W L is determined to be normal in step S15, determine the quality of the joint position of the upper wafer W U and the lower wafer W L To do.
- the lower chuck 231 is lowered and placed at a predetermined position.
- the arrangement distance D 4 is the predetermined distance between the upper surface of the lower surface and the lower chuck 231 of the upper chuck 230, for example, 50 [mu] m ⁇ 500 [mu] m, the lower wafer W L as more preferably a 100 [mu] m.
- the imaging member 271 as shown in FIG.
- the overlapped wafer W peripheral portion captured, for example three points T on the lower chuck 230. Then, to measure the outer diameter of the overlapped wafer W T in the measuring unit 270. Then, based on the measurement result of the outside diameter of the overlapping wafer W T, and determines the quality of the joint position of the upper wafer W U and the lower wafer W L (step S16 in FIG. 15).
- a predetermined threshold value for example, 300.2mm (300mm + 200 ⁇ m)
- bonding position of the upper wafer W U and the lower wafer W L normal It is determined that This predetermined threshold value, the outer diameter 300mm above the wafer W U and the lower wafer W L, a value obtained by adding the allowable value 200 [mu] m. That is, in this embodiment, the allowable value of the positional deviation of the upper wafer W U and the lower wafer W L is 200 [mu] m.
- the outer diameter is a predetermined threshold value of the measured overlapped wafer W T by the measurement unit 270, for example, when it is 300.2mm (300mm + 200 ⁇ m) or higher, the bonding position of the upper wafer W U and the lower wafer W L is abnormal judge.
- the predetermined threshold value is a value tolerance of misalignment between the upper wafer W U and the lower wafer W L is 200 ⁇ m, as described above.
- the overlapped wafer W T that bonding strength is judged to be abnormal in step S16 is recovered from the interface system 1.
- a predetermined value for example, 301mm (300mm + 1mm)
- the outer diameter of the overlapping wafer W T is less than or 300.2Mm 301 mm
- overlapped wafer W T is recovered by using the transfer system of the interface system 1. That is, the overlapped wafer W T is transferred to the transition unit 51 by the wafer transfer apparatus 61, is recovered by the wafer transfer unit 22 of the subsequent unloading station 2 is transported to the cassette C T of predetermined cassette mounting plate 11.
- the predetermined value is, the outer diameter 300mm above the wafer W U and the lower wafer W L, a value obtained by adding the allowable value 1 mm.
- the size that the transfer arms of the wafer transfer apparatuses 22 and 61 can transfer is 301 mm.
- the outer diameter is a predetermined value of the measured overlapped wafer W T by the measurement unit 270, for example, when it is 301 mm (300 mm + 1 mm) or more, the bonding system 1 warns the warning device (not shown). Based on this warning, the overlapped wafer W T is recovered from the joint stem 1 by an external mechanism of the interface system 1.
- This external mechanism may be, for example, a transfer device including a transfer arm, or may be manual.
- the warning device described above may be the control unit 300.
- step S14 the bonding strength in step S15 is normal, the overlapped wafer W T junction position is determined to be normal in step S16, it is carried to the transition unit 51 by the wafer transfer apparatus 61, then by the wafer transfer apparatus 22 of the carry-out station 2 is transported to the cassette C T of predetermined cassette mounting plate 11.
- a series of wafers W U, bonding process of W L is completed.
- step S16 the outside diameter of the overlapped wafer W T is measured, based on the measurement result, and determine the quality of the joint position of the upper wafer W U and the lower wafer W L . Then, for example, when joining position is normal, it is possible to properly carry out the subsequent process on the bonded overlapped wafer W T. On the other hand, for example, when joining position is abnormal, it recovered to stop subsequent processing for the bonded overlapped wafer W T. As a result, it is possible to prevent defective conveyance and wafer breakage as in the conventional case, and the subsequent wafer W can be processed smoothly.
- step S16 when the bonding position of the upper wafer W U and the lower wafer W L is determined to be abnormal in step S16, if the measurement result of the outside diameter of the overlapping wafer W T is less than the predetermined value, the bonded wafer W T is collected is transported to a predetermined cassette C T of the station 2 loading and unloading by the wafer transfer apparatus 22, 61. On the other hand, the measurement result of the outside diameter of the overlapping wafer W T is larger than the predetermined value, a warning from the interface system 1 is issued, the overlapped wafer W T is recovered from the interface system 1 by an external mechanism.
- step S14 the suction pipe 240a, 240b, on the basis of the pressure inside the 240c, which determine the quality of adhesion of the upper wafer W U and the lower wafer W L.
- step S15 the suction pipe 240a, 240b, on the basis of the pressure inside the 240c, which determine the quality of the bonding strength of the upper wafer W U and the lower wafer W L.
- Step S14 and Step S15 when the pressure of any one of the suction tubes 240a, 240b, and 240c is equal to or lower than a predetermined threshold value, it is determined that the joining is abnormal. Therefore, it is possible to inspect the bonding of the upper wafer W U and the lower wafer W L more strictly, it is possible to smoothly perform the processing for the subsequent wafer W.
- step S14 and step S15 in the present embodiment since is performed using a device required for bonding the wafer W U, the W L together, the new device is not required for performing the step S14 and step S15 It is. Therefore, it is possible to efficiently determine the quality of bonding.
- step S13 in a state of pressing by contacting the central portion of the central portion and the lower wafer W L of the upper wafer W U by pressing member 250, toward the outer periphery from the center of the upper wafer W U, stop evacuation of the upper wafer W U, the upper wafer W U are sequentially abut on the lower wafer W L, it is possible to bond the upper wafer W U and the lower wafer W L.
- the region 230b when stopping the evacuation of the upper wafer W U in 230c, since the central portion of the central portion and the lower wafer W L of the upper wafer W U is pressed in contact with, for example, the upper wafer W even if there is air between the U and the lower wafer W L, never deviated in the horizontal direction position of the upper wafer W U against the lower wafer W L. Therefore, the wafers W U and W L can be appropriately bonded.
- the wafer W U can suppress the generation of voids between W L, it is possible to more suitably joined wafers W U, the W L together.
- the stopper member 262 to the outer peripheral portion of the lower chuck 231 is provided, it is possible to prevent the wafer W U, W L, or popping overlapped wafer W T is the lower chuck 231, from sliding down.
- the bonding apparatus 41 includes a position adjusting mechanism 210 that adjusts the horizontal direction of the wafers W U and W L , since also has a reversing mechanism 220 for reversing the front and back surfaces of the wafer W U, it can be performed efficiently bonding the wafer W U, W L in one device. Furthermore, in addition to the bonding apparatus 41, the bonding system 1 hydrophilizes the surface W U1 and W L1 and the surface modifying apparatus 30 that modifies the surfaces W U1 and W L1 of the wafers W U and W L and the surface W U1 and W L1. Since the surface hydrophilizing device 40 for cleaning the surfaces W U1 and W L1 is also provided, the wafers W U and W L can be efficiently bonded in one system. Accordingly, the throughput of the wafer bonding process can be further improved.
- the upper imaging member 253 for imaging the lower wafer W L, the imaging member 271 of the measuring unit 270 to image the overlapped wafer W T has been provided separately, provided only one May be. That is, it may be imaged both lower wafer W L and the overlapped wafer W T by the upper imaging member 253, it is imaged both lower wafer W L and the overlapped wafer W T by the imaging member 271 Good. In such a case, since either the upper imaging member 253 or the imaging member 271 can be omitted, the apparatus configuration can be simplified.
- step S14 and step S15 the suction pipe 240a, 240b, on the basis of the pressure inside the 240c, to determine the acceptability of bonding the bonding strength of the upper wafer W U and the lower wafer W L
- these quality determinations can also be made using other parameters.
- the quality may be determined based on the above.
- the lower chuck 231 can be moved up and down in the vertical direction and moved in the horizontal direction by the chuck driving unit 234.
- the upper chuck 230 can be moved up and down in the vertical direction, It may be configured to be movable.
- both the upper chuck 230 and the lower chuck 231 may be configured to be vertically movable and movable in the horizontal direction.
- the present invention is not limited to such examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
- the present invention is not limited to this example and can take various forms.
- the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
- FPD flat panel display
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Abstract
Description
2 搬入出ステーション
3 処理ステーション
30 表面改質装置
40 表面親水化装置
41 接合装置
60 ウェハ搬送領域
201 搬送路
202 ウェハ搬送体
210 位置調節機構
220 反転機構
230 上部チャック
230a、230b、230c 領域
231 下部チャック
233 シャフト
234 チャック駆動部
240a、240b、240c 吸引管
241a、241b、241c 真空ポンプ
242a、242b、242c 圧力測定部
250 押動部材
262 ストッパ部材
270 測定部
271 撮像部材
300 制御部
WU 上ウェハ
WU1 表面
WL 下ウェハ
WL1 表面
WT 重合ウェハ
Claims (16)
- 平面形状が同一の基板同士を接合する接合方法であって、
第1の保持部材の下面に吸着保持された第1の基板と、前記第1の保持部材の下方に設けられた第2の保持部材の上面において吸着保持された第2の基板とを接合する接合工程と、
その後、第1の基板と第2の基板が接合された重合基板の外径を測定し、当該測定結果に基づいて、第1の基板と第2の基板の接合位置の良否を判定する接合位置判定工程と、を有し、
前記接合位置判定工程では、前記測定結果が所定の閾値未満である場合、第1の基板と第2の基板の接合位置が正常であると判定し、前記測定結果が所定の閾値以上である場合、第1の基板と第2の基板の接合位置が異常であると判定する。 - 請求項1に記載の接合方法であって、
前記接合位置判定工程では、重合基板の外周部を撮像して、当該重合基板の外径を測定する。 - 請求項1に記載の接合方法であって、
前記接合工程後であって前記接合位置判定工程前において、前記第1の保持部材又は前記第2の保持部材を相対的に鉛直方向に移動させて、前記第1の保持部材と前記第2の保持部材を所定の位置に配置した後、吸引管を介して前記第1の保持部材に設けられた吸引機構によって第1の基板に対する真空引きを行い、前記吸引管の内部の圧力に基づいて、前記第1の保持部材に第1の基板が残存しているか否かを判定して、第1の基板と第2の基板の接着の良否を判定する接着判定工程を有し、
前記接着判定工程では、前記吸引管の内部の圧力が所定の閾値より大きい場合、第1の基板と第2の基板の接着が正常であると判定し、前記吸引管の内部の圧力が所定の閾値以下である場合、第1の基板と第2の基板の接着が異常であると判定する。 - 請求項3に記載の接合方法であって、
前記接着判定工程において、第1の基板が前記第1の保持部材に吸着保持されておらず正常と判定された場合、前記接着判定工程後であって前記接合位置判定工程前において、前記第1の保持部材又は前記第2の保持部材を相対的に鉛直方向に移動させて、前記第1の保持部材と前記第2の保持部材を所定の位置に配置した後、前記吸引機構による真空引きを行い、且つ前記第2の保持部材によって第2の基板を吸着保持し、前記吸引管の内部の圧力に基づいて、第1の基板と第2の基板の接合強度の良否を判定する接合強度判定工程を有し、
前記接合強度判定工程では、前記吸引管の内部の圧力が所定の閾値より大きい場合、第1の基板と第2の基板の接合強度が正常であると判定し、前記吸引管の内部の圧力が所定の閾値以下である場合、第1の基板と第2の基板の接合強度が異常であると判定する。 - 請求項1に記載の接合方法であって、
前記第1の保持部材は、中心部から外周部に向けて複数の領域に区画され、当該領域毎に第1の基板の真空引きを設定可能である。 - 請求項1に記載の接合方法であって、
前記接合工程において、
前記第1の保持部材に保持された第1の基板と、前記第2の保持部材に保持された第2の基板とを所定の間隔で対向配置し、
その後、前記第1の保持部材に設けられた押動部材によって第1の基板の中心部と第2の基板の中心部を当接させて押圧し、
その後、第1の基板の中心部と第2の基板の中心部が押圧された状態で、第1の基板の中心部から外周部に向けて、第1の基板と第2の基板を順次接合する。 - 平面形状が同一の基板同士を接合する接合装置であって、
下面に第1の基板を吸着保持する第1の保持部材と、
前記第1の保持部材の下方に設けられ、上面に第2の基板を吸着保持する第2の保持部材と、
第1の基板と第2の基板が接合された重合基板の外径を測定する測定部と、
第1の基板と第2の基板の接合の良否を判定する制御部と、を有し、
前記制御部は、
前記第1の保持部材の下面に吸着保持された第1の基板と、前記第2の保持部材の上面において吸着保持された第2の基板とを接合する接合工程と、その後、重合基板の外径を測定し、当該測定結果に基づいて、第1の基板と第2の基板の接合位置の良否を判定する接合位置判定工程と、を実行するように、前記第1の保持部材、前記第2の保持部材及び前記測定部の動作を制御し、
前記接合位置判定工程では、前記測定結果が所定の閾値未満である場合、第1の基板と第2の基板の接合位置が正常であると判定し、前記測定結果が所定の閾値以上である場合、第1の基板と第2の基板の接合位置が異常であると判定する。 - 請求項7に記載の接合装置であって、
前記測定部は、重合基板の外周部を撮像する撮像部材を有する。 - 請求項7に記載の接合装置であって、
前記第1の保持部材に設けられ、第1の基板を真空引きする吸引機構と、
前記第1の保持部材と前記吸引機構とを接続する吸引管と、
前記第1の保持部材又は第2の保持部材を相対的に鉛直方向に昇降させる昇降機構と、を有し、
前記制御部は、
前記接合工程後であって前記接合位置判定工程前において、前記第1の保持部材又は前記第2の保持部材を相対的に鉛直方向に移動させて、前記第1の保持部材と前記第2の保持部材を所定の位置に配置した後、前記吸引機構によって第1の基板に対する真空引きを行い、前記吸引管の内部の圧力に基づいて、前記第1の保持部材に第1の基板が残存しているか否かを判定して、第1の基板と第2の基板の接着の良否を判定する接着判定工程を実行するように、前記第1の保持部材、前記第2の保持部材、前記吸引機構及び前記昇降機構の動作を制御し、
前記接着判定工程では、前記吸引管の内部の圧力が所定の閾値より大きい場合、第1の基板と第2の基板の接着が正常であると判定し、前記吸引管の内部の圧力が所定の閾値以下である場合、第1の基板と第2の基板の接着が異常であると判定する。 - 請求項9に記載の接合装置であって、
前記制御部は、
前記接着判定工程において、第1の基板が前記第1の保持部材に吸着保持されておらず正常と判定された場合、前記接着判定工程後であって前記接合位置判定工程前において、前記第1の保持部材又は前記第2の保持部材を相対的に鉛直方向に移動させて、前記第1の保持部材と前記第2の保持部材を所定の位置に配置した後、前記吸引機構による真空引きを行い、且つ前記第2の保持部材によって第2の基板を吸着保持し、前記吸引管の内部の圧力に基づいて、第1の基板と第2の基板の接合強度の良否を判定する接合強度判定工程を実行するように、前記第1の保持部材、前記第2の保持部材、前記吸引機構及び前記昇降機構の動作を制御し、
前記接合強度判定工程では、前記吸引管の内部の圧力が所定の閾値より大きい場合、第1の基板と第2の基板の接合強度が正常であると判定し、前記吸引管の内部の圧力が所定の閾値以下である場合、第1の基板と第2の基板の接合強度が異常であると判定する。 - 請求項7に記載の接合装置であって、
前記第1の保持部材は、中心部から外周部に向けて複数の領域に区画され、当該領域毎に第1の基板の真空引きを設定可能である。 - 請求項7に記載の接合装置であって、
前記第1の保持部材に設けられ、第1の基板の中心部を押圧する押動部材を有する。 - 請求項7に記載の接合装置であって、
前記第2の保持部材の外周部には、第1の基板、第2の基板、又は重合基板に対するストッパ部材が設けられている。 - 請求項7に記載の接合装置であって、
第1の基板又は第2の基板の水平方向の向きを調節する位置調節機構と、
第1の基板の表裏面を反転させる反転機構と、
前記接合装置内で第1の基板、第2の基板又は重合基板を搬送する搬送機構と、を有する。 - 平面形状が同一の基板同士を接合する接合装置を備えた接合システムであって、
前記接合装置は、
下面に第1の基板を吸着保持する第1の保持部材と、
前記第1の保持部材の下方に設けられ、上面に第2の基板を吸着保持する第2の保持部材と、
第1の基板と第2の基板が接合された重合基板の外径を測定する測定部と、
第1の基板と第2の基板の接合の良否を判定する制御部と、を有し、
前記制御部は、
前記第1の保持部材の下面に吸着保持された第1の基板と、前記第2の保持部材の上面において吸着保持された第2の基板とを接合する接合工程と、その後、重合基板の外径を測定し、当該測定結果に基づいて、第1の基板と第2の基板の接合位置の良否を判定する接合位置判定工程と、を実行するように、前記第1の保持部材、前記第2の保持部材及び前記測定部の動作を制御し、
前記接合位置判定工程では、前記測定結果が所定の閾値未満である場合、第1の基板と第2の基板の接合位置が正常であると判定し、前記測定結果が所定の閾値以上である場合、第1の基板と第2の基板の接合位置が異常であると判定し、
前記接合システムは、
前記接合装置を備えた処理ステーションと、
第1の基板、第2の基板又は重合基板をそれぞれ複数保有可能で、且つ前記処理ステーションに対して第1の基板、第2の基板又は重合基板を搬入出する搬入出ステーションと、を備え、
前記処理ステーションは、
第1の基板又は第2の基板の接合される表面を改質する表面改質装置と、
前記表面改質装置で改質された第1の基板又は第2の基板の表面を親水化する表面親水化装置と、
前記表面改質装置、前記表面親水化装置及び前記接合装置に対して、第1の基板、第2の基板又は重合基板を搬送するための搬送領域と、を有し、
前記接合装置では、前記表面親水化装置で表面が親水化された第1の基板と第2の基板を接合する。 - 請求項15に記載の接合システムであって、
前記接合位置判定工程で第1の基板と第2の基板の接合位置が異常であると判定された場合において、
前記重合基板の外径の測定結果が所定の値未満である場合、当該重合基板が前記搬送領域を介して前記搬入出ステーションに搬送されて回収され、
前記重合基板の外径の測定結果が所定の値以上である場合、当該重合基板が前記接合システムの外部機構によって当該接合システムから回収されるように警告を発する。
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JP2010221253A (ja) * | 2009-03-23 | 2010-10-07 | Bondtech Inc | 接合装置、接合方法および半導体装置 |
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AT405775B (de) * | 1998-01-13 | 1999-11-25 | Thallner Erich | Verfahren und vorrichtung zum ausgerichteten zusammenführen von scheibenförmigen halbleitersubstraten |
US5961169A (en) | 1998-07-27 | 1999-10-05 | Strasbaugh | Apparatus for sensing the presence of a wafer |
JP2002050749A (ja) | 2000-07-31 | 2002-02-15 | Canon Inc | 複合部材の分離方法及び装置 |
JP3742000B2 (ja) * | 2000-11-30 | 2006-02-01 | 富士通株式会社 | プレス装置 |
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US7275577B2 (en) * | 2002-11-16 | 2007-10-02 | Lg.Philips Lcd Co., Ltd. | Substrate bonding machine for liquid crystal display device |
WO2005071735A1 (ja) | 2004-01-22 | 2005-08-04 | Bondtech Inc. | 接合方法及びこの方法により作成されるデバイス並びに接合装置 |
JP4476764B2 (ja) | 2004-03-26 | 2010-06-09 | 富士フイルム株式会社 | 基板接合装置及び方法 |
CN101779270B (zh) * | 2007-08-10 | 2013-06-12 | 株式会社尼康 | 基板贴合装置及基板贴合方法 |
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JPH1187480A (ja) * | 1997-09-11 | 1999-03-30 | Ulvac Japan Ltd | 被吸着物の吸着状態モニター方法及び真空装置 |
JP2004207436A (ja) * | 2002-12-25 | 2004-07-22 | Ayumi Kogyo Kk | ウエハのプリアライメント方法とその装置ならびにウエハの貼り合わせ方法とその装置 |
JP2010221253A (ja) * | 2009-03-23 | 2010-10-07 | Bondtech Inc | 接合装置、接合方法および半導体装置 |
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TWI503861B (zh) | 2015-10-11 |
JP2012186244A (ja) | 2012-09-27 |
KR101907709B1 (ko) | 2018-10-12 |
TW201303960A (zh) | 2013-01-16 |
KR20140006012A (ko) | 2014-01-15 |
JP5389847B2 (ja) | 2014-01-15 |
US20130327463A1 (en) | 2013-12-12 |
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