WO2012115643A1 - Procédés et appareil pour la mesure de l'épaisseur d'un film - Google Patents

Procédés et appareil pour la mesure de l'épaisseur d'un film Download PDF

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Publication number
WO2012115643A1
WO2012115643A1 PCT/US2011/025979 US2011025979W WO2012115643A1 WO 2012115643 A1 WO2012115643 A1 WO 2012115643A1 US 2011025979 W US2011025979 W US 2011025979W WO 2012115643 A1 WO2012115643 A1 WO 2012115643A1
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WO
WIPO (PCT)
Prior art keywords
thickness
measurement
thin film
film
light
Prior art date
Application number
PCT/US2011/025979
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English (en)
Inventor
Johannes Moll
Original Assignee
Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Incorporated filed Critical Corning Incorporated
Priority to EP11706450.1A priority Critical patent/EP2678634A1/fr
Priority to PCT/US2011/025979 priority patent/WO2012115643A1/fr
Priority to CN201180020666.8A priority patent/CN103003661A/zh
Publication of WO2012115643A1 publication Critical patent/WO2012115643A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/042—Calibration or calibration artifacts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0691—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of objects while moving

Definitions

  • the embodiments herein relate to the measurement of film thickness of thin films on glass or other substrates.
  • Methods and apparatus disclosed herein are designed to enable high-speed mapping of film thickness such as would be required for an accurate in-line measurement system for high- volume production of SiOG (Silicon-on-Glass).
  • spectroscopic ellipsometry is a widely-used and highly accurate measurement method for thin film thickness; however, it is a single-point measurement method and typically requires several seconds of measurement time per data point, making it much too slow for high-speed mapping as is required in an in-line system.
  • Spectroscopic reflectometry is also a widely-used and accurate measurement method for thin film thickness. Like spectroscopic ellipsometry, it is a single-point measurement with typical acquisition times of at least 1 second per data point. This method is not sufficiently fast for high-speed mapping.
  • Commercial systems using spectroscopic reflectometry include those available from OceanOptics, Filmetrics and N&K, to name a few.
  • U.S. Patent No. 7,304,744 discloses a method employing spectroscopic reflectometry.
  • the white light, or low-coherence interferometry, technique takes advantage of the same physical phenomenon as spectroscopic reflectometry, but measures reflectance indirectly by means of a white light interferometer instead of a spectrometer.
  • This technique can conceivably enable an imaging mode in which many points are measured simultaneously, but it is a technically difficult and expensive method.
  • U.S. Patent Nos. 7,468,799 and 7,483,147 relate to methods of measuring thin films using the white light, or low-coherence interferometry, technique.
  • the thermal wave technique can also be used to measure thermal characteristics of a sample and to draw conclusions on feature thickness such as film thickness.
  • this technique is also a single point measurement and requires use of two lasers, one laser to create thermal waves, another to probe the thermal waves, thus it is slow, expensive and may require complicated compensation of thermal lens effects.
  • Methods disclosed herein employ i) a first measurement of a thin film which is essentially a high-speed full- or partial-width scan measurement that is thickness dependent but does not directly produce a specific value for thickness and ii) a second measurement which is essentially a single-point measurement which is typically more accurate than the first measurement and can be used to calibrate the first high-speed measurement.
  • the first measurement may employ a single light line such as a laser line projected onto a sample and a line detector to measure the reflected intensity of the light.
  • light wavelength and angle of incidence may be chosen to optimize correlation with film thickness in a narrow range around the target film thickness.
  • the first measurement may include a reflectance measurement at a single wavelength.
  • the second measurement is used to verify absolute film thickness in a few spots over time.
  • the second measurement may employ known measurement techniques such as spectroscopic reflectometry or spectroscopic ellipsometry. Using the second measurement one can verify that all data points acquired using the first measurement are within a given thickness range, for example, those in a product specification.
  • Systems disclosed herein employing the subject methods include apparatus for a first thickness measurement of a thin film and apparatus for a second measurement of the film.
  • Apparatus for the first thickness measurement may include a light source such as a laser and projection optics such as one or more lenses for illumination, collection optics and a detector array such as a line-scan camera for detection.
  • Apparatus for the second measurement may be any suitable single point measurement system such as a spectroscopic reflectometer, ellipsometer or the like.
  • a computing system may process data from the measurement apparatus.
  • systems employing the subject methods may be simple in that a basic system may consist of just a laser and lens for illumination and a detector array such as a line-scan camera for detection (for the first thickness measurement for high-speed, precise mapping), and a simple commercial spectroscopic reflectometer (second, single point measurement for calibration and accuracy (low speed)).
  • a basic system may consist of just a laser and lens for illumination and a detector array such as a line-scan camera for detection (for the first thickness measurement for high-speed, precise mapping), and a simple commercial spectroscopic reflectometer (second, single point measurement for calibration and accuracy (low speed)).
  • the film thickness of a typical SiOG part can be measured and mapped in less than 1 second with sub-mm lateral resolution in the thickness map. Measurement time would likely be limited only by the line speed of the sample passing through the measurement system. Conversely, traditional single point methods, such as spectroscopic reflectometry, require several minutes or even hours to achieve the same level of measurement.
  • film thickness using the presently disclosed systems and methods can be measured with an accuracy of about 1 nm, which is well within the typical requirements of such a system.
  • the presently disclosed methods are particularly well-suited for thinner films as the thickness dependence of the reflectance decreases for thicker films.
  • FIG. 1 is a graphical representation of an exemplary reflectance calculation (crystalline Si on EagleTM (Corning®) substrate) for a s-polarized 550 nm laser at 45 degree incidence, including a tolerance range (TR) between 75 and 85 nm in accordance with one or more embodiments disclosed herein.
  • TR tolerance range
  • FIG. 2 is a graphical representation of an exemplary reflectance calculation (crystalline Si on Eagle substrate) for different laser wavelengths at 45 degree incidence and using s-polarization in accordance with one or more embodiments disclosed herein.
  • FIG. 3 is a diagrammatic representation of a system in accordance with one or more embodiments disclosed herein.
  • FIG. 4 is a diagrammatic representation of a system in accordance with one or more embodiments disclosed herein.
  • a method of measuring the thickness of a thin film employs two measurements: a first, high-speed scanning measurement of the thin film and a second, single-point calibration measurement of the film.
  • the first measurement may employ a single light line such as a laser line projected onto a sample and a line detector to measure the reflected intensity of the light.
  • the measured reflected light intensity of a sample is a function of the composition and thickness of the film and substrate material as well as illumination intensity.
  • the data for refractive index and absorption coefficients of the film and substrate may be obtained from tables available in the literature as is well known to those skilled in the art. Similarly, refractive index and absorption of the chosen light wavelength can be looked up in the literature for the film and substrate materials. Therefore, at least in an embodiment in which a target film thickness for a sample or product exists, light wavelength, angle of incidence, and polarization state may be chosen to optimize correlation with film thickness in a narrow range around the target film thickness.
  • the first measurement may include a reflectance measurement at a single wavelength.
  • a reflectance calculation for a first measurement of a sample of crystalline Si on an EagleTM (Corning®) substrate for an s- polarized 550 nm laser at 45 degree incidence was performed using TFCalc software and literature data for refractive index and absorption coefficients of the film and substrate.
  • the circles, corresponding to 56, 79, 125, 148, 193 and 217 nm, illustrate that a reflectance measurement alone, while very fast, on the order of a few milliseconds, is ambiguous in that several different film thicknesses can result in the same reflectance. As shown, for a 50% reflectance the thickness could be ⁇ 56, 79, 125, 148, 193, 217, ... nm. Because the measured reflected light intensity of a sample is not only a function of the composition and thickness of the film and substrate material, but also of illumination intensity, the first measurement requires calibration.
  • the first measurement is calibrated by obtaining a second, single point thickness measurement, such as by a reflector of known reflectivity at a chosen laser wavelength, polarization, and angle of incidence.
  • the second measurement entails illuminating a chosen single point of the subject film with white light, performing a full spectrum analysis of the reflected light and fitting theoretical models to the measured full spectrum reflectance data using various fit parameters such as refractive index, absorption, and thickness of the film and substrate.
  • the calibration or reference measurement is also used to compensate for variations in light intensity over time and along the light line, i.e., different positions of the line of light created by a lens, rotating scanner or the like of a light projection system.
  • the actual reading of the second measurement is relatively fast, i.e., a few milliseconds. Completion of the second measurement takes a little longer, however, about one or two seconds, due to the processing time to perform the full spectrum calculation and fitting the results using theoretical models.
  • one or more second, single-point calibration measurements are performed to provide one or more reference measurements to provide accurate thickness measurements.
  • the first highspeed thickness measurement and the second, single-point calibrating measurement do not have to be performed at the same point in time.
  • the thickness of the film as calculated from the high-speed measurement is unambiguous. It is sufficient to obtain the absolute thickness value using the single-point measurement in only a few locations, therefore the measurement speed is not limited by its acquisition rate.
  • the continuity of the film ensures that if all points within a map are in the expected reflectance range, and thickness is in the correct range in at least one point as measured by the single- point measurement, then all points in the map must be within the expected thickness range. If some of the points are outside the expected thickness range, some of the points would necessarily have to be outside the acceptable percentage range for reflectance unless there are large sudden step changes in thickness.
  • FIG. 3 an embodiment of a measuring apparatus 100 for measuring the thickness of a film 154 such as may be disposed on a substrate 152 in a given sample 150.
  • Film 154 may be silicon or another semiconductor material.
  • Substrate 152 may be a glass or glass-ceramic material, or any other suitable substrate material.
  • the apparatus 100 includes at least one light source 102, projection optics 104, collection optics 106, detector array 108, a single point measurement apparatus 120 and a computing system 130.
  • the light source 102 and projection optics 104 are positioned to illuminate the surface of the film 154, wherein the collection optics 106 and detector array 108 operate to produce a thickness measurement in response to the illumination intensity produced proximate to the surface of the film 154.
  • the single point measurement apparatus 120 is positioned to obtain accurate measurements of film 154 thickness at one or more points.
  • the computing system 130 operates to analyze the measurement obtained from the detector array 108, compare the measurement to the measurements obtained from the single point measurement apparatus 120, and calibrate the thickness measurement of the film 154.
  • SOI structures have suitable uses in connection with fabricating thin film transistors (TFTs), e.g., for display applications, including organic light-emitting diode (OLED) displays and liquid crystal displays (LCDs), integrated circuits, photovoltaic devices, etc.
  • TFTs thin film transistors
  • OLED organic light-emitting diode
  • LCDs liquid crystal displays
  • SOI structures have been referred to in the literature as silicon-on-insulator structures and the abbreviation "SOI" has been applied to such structures.
  • SOI technology is becoming increasingly important for high performance thin film transistors, solar cells, and displays, such as active matrix displays.
  • SOI structures may include a thin layer of substantially single crystal silicon on an insulating material.
  • SOI structures are made to facilitate the explanation of the embodiments described herein and are not intended to, and should not be interpreted as, limiting the claims in any way.
  • SOI abbreviation is used herein to refer to semiconductor-on-insulator structures in general, including, but not limited to, semiconductor-on-glass (SOG) structures, silicon-on-insulator (SOI) structures, and silicon- on-glass (SiOG) structures, which also encompasses silicon-on-glass-ceramic structures.
  • SOOG semiconductor-on-glass
  • SOI silicon-on-insulator
  • SiOG silicon- on-glass
  • the presently disclosed methods are not limited to semiconductor or SOI structures, and may employed in connection with any material that is transparent at the light wavelength used for the measurements.
  • a thin film 154 of semiconductor material may be used in the production of, or development of, an SOI device.
  • the thin film of semiconductor material 154 and substrate 152 e.g., a glass or glass-ceramic material
  • the thin film of semiconductor material 154 and substrate 152 may be the sample 150 structure subjected to measurement.
  • the film 154 being semiconductor and the substrate 152 being glass or glass ceramic are only exemplary, and the apparatus 100 and/or other methods and apparatus described herein may operate on semiconductor-on-semiconductor SOI and other non- semiconductor materials.
  • a semiconductor film 154 may have been prepared, such as by polishing, cleaning, etc. to produce a relatively flat and uniform surface.
  • the semiconductor film 154 may be a substantially single crystal Si film, although any other suitable semiconductor conductor material may be employed, such as the III-V, II-IV, II-IV- V, etc. classes of semiconductors. Examples of these materials include: silicon (Si), germanium-doped silicon (SiGe), silicon carbide (SiC), germanium (Ge), gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), and indium phosphide (InP).
  • the semiconductor film 154 may have been disposed on the substrate 152 by any known process such as exfoliation or deposition.
  • light source 102 may be a laser, chosen for its narrow spectrum and high intensity, but as will be apparent to the skilled artisan, other light sources (such as LEDs) may work as well if they have a narrow emission spectrum and sufficient intensity.
  • Projection optics 104 may include a cylindrical lens, rotating scanner, rotating mirror, reflector and the like as further detailed below with respect to FIG. 4.
  • the function of the projection optics 104 is to project a line of light onto the surface of the film 154 of the sample 150 with the required intensity and polarization state.
  • the projection optics 104 may be arranged to collimate the light incident I on the sample 150 such that vertical displacement of the sample 150 (in z) would not change where the light hits the sample in the y-direction (although it would still affect x-position).
  • Projection optics 104 may also be implemented with diverging or converging light.
  • the light wavelength, polarization state, and angle of incidence ⁇ are chosen to provide the best sensitivity for a given film thickness range.
  • a laser operating at 550 nm wavelength can be used in s-polarization at 45 degree incidence 9i to obtain a reflectance R ranging from ⁇ 20% at 70 nm to > 70% at 90 nm film thickness.
  • Collection optics 106 may include a a cylindrical lens, rotating scanner, rotating mirror, reflector and the like. The purpose of the collection optics 106 is to receive the reflected light R and image the light as desired onto the detector array 108.
  • Detector array 108 is any suitable detector array such as a line-scan camera.
  • the detector array 108 measures the intensity of the reflected light R, therefore it must be sensitive at the chosen laser wavelength.
  • the choice of detector array may depend on the wavelength of the light, the required resolution, and processing speed.
  • An example of a suitable detector array is a line scan camera commercially available from Basler or Dalsa.
  • projection optics 104 may include a polarizer 104 A, beam splitter 104B and cylindrical lenses 104C.
  • a polarizer 104 A might be required where the light source 102 is not a laser light source.
  • a power meter 105 may be included for light intensity correction and control.
  • a rotating mirror instead of the first cylindrical lens 104C after beam splitter, a rotating mirror may be used to create the light line on the sample 150 (flying point).
  • An advantage of such an arrangement would be higher intensity of the light on the sample 150 and reduced power requirements for the light source 102. Some loss of speed in measurement might result from such an arrangement because only one point could be measured at a time.
  • any of the lenses 104C could be replaced by a curved reflector.
  • the sample 150 moves along the X direction with the optical system (projection optics 104, collection optics 106 and detector array 108) remaining fixed, or the entire optical system moves in the X direction relative to a fixed sample 150, or a combination of both.
  • the optical system is fixed and the sample 150 is traveling on a conveyor or motion system, moving through the measurement system 100 at a known speed, such speed can be used to establish coordinates for the measured data points.
  • the reflectance value obtained by the first measurement must be determined to be accurate. This requires that the intensity of the light source 102 used for the first measurement is either controlled or monitored. Such control may be achieved in a number of ways. In one embodiment, such control may be achieved by splitting off a small part of the light to a separate detector (not shown) and including a feedback loop to keep intensity constant over time. This technique is routinely employed in many light sources. In another embodiment, part of the incident light may be split off, measured using power meter 105 and compared to the measured reflected light using an optical beam splitter 104B and an accurate measurement of reflectance is possible if the reflectance of the beam splitter is known. In another embodiment, measured reflectance at a particular point in the film can be compared to the theoretical reflectance calculated from the second, single point thickness measurement at the same point in the film, and a correction factor applied for the measured reflectances based on that comparison.
  • the second, single-point thickness measurement apparatus 120 is employed to provide accurate thickness measurements to calibrate the first high speed measurement, and to ensure the film 154 is in the correct thickness range.
  • the single point thickness measurement apparatus 120 may be a spectroscopic re Hectometer, ellipso meter, low- coherence interferometer or another suitable thickness measurement tool known to those skilled in the art.
  • the single-point thickness measurement is performed at a location on the film 154 that is also measured by the first measurement apparatus, but the respective measurements do not have to be performed at the same point in time. Therefore the single- point thickness measurement apparatus 120 can be offset from the light source 102 and projection and collection optics 104 and 106 with respect to a sample 150 in motion.
  • Computing system 130 processes the data D from the detector array 108 and converts them into thickness values using the calibration data D obtained from the single point measurement apparatus 120.
  • the computing system 130 which includes a processor capable of running computer executable code takes the reflectance data D and calculates thickness based on curves such as shown in FIG. 2 in conjunction with previous calibrations and simultaneous absolute thickness measurements from the single point measurement apparatus 120. Based on this information the computing system may create thickness maps at high resolution and identify any areas that are outside a specified thickness range. If needed, the data can be saved for further processing, or used by other processing equipment.
  • the computed result may be provided to a user of the apparatus 100 by way of a display means within the computing system 130, such as a computer screen, a print-out, etc.
  • the hardware of the computing system 130 may be implemented utilizing any of the known technologies, such as standard digital circuitry, any of the known processors that are operable to execute software and/or firmware programs, one or more programmable digital devices or systems, such as programmable read only memories (PROMs), programmable array logic devices (PALs), etc.
  • PROMs programmable read only memories
  • PALs programmable array logic devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

La présente invention concerne des procédés et un appareil permettant de mesurer l'épaisseur d'un film mince, consistant à obtenir une mesure de l'épaisseur à grande vitesse d'un film mince à l'aide d'un système de projection laser et d'un réseau de détecteurs, à obtenir des mesures de l'épaisseur du film mince sur un ou plusieurs emplacements à l'aide d'un appareil de mesure de points uniques et à déterminer la précision des valeurs de mesure à grande vitesse en les comparant à une ou plusieurs des valeurs absolues d'épaisseur du film mesurées par l'appareil de mesure de points uniques.
PCT/US2011/025979 2011-02-24 2011-02-24 Procédés et appareil pour la mesure de l'épaisseur d'un film WO2012115643A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP11706450.1A EP2678634A1 (fr) 2011-02-24 2011-02-24 Procédés et appareil pour la mesure de l'épaisseur d'un film
PCT/US2011/025979 WO2012115643A1 (fr) 2011-02-24 2011-02-24 Procédés et appareil pour la mesure de l'épaisseur d'un film
CN201180020666.8A CN103003661A (zh) 2011-02-24 2011-02-24 用于测量膜厚度的方法和设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/025979 WO2012115643A1 (fr) 2011-02-24 2011-02-24 Procédés et appareil pour la mesure de l'épaisseur d'un film

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WO2012115643A1 true WO2012115643A1 (fr) 2012-08-30

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WO (1) WO2012115643A1 (fr)

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US7304744B1 (en) 1998-12-24 2007-12-04 Sharp Kabushiki Kaisha Apparatus and method for measuring the thickness of a thin film via the intensity of reflected light
US7468799B2 (en) 2003-10-27 2008-12-23 Zygo Corporation Scanning interferometry for thin film thickness and surface measurements
US7483147B2 (en) 2004-11-10 2009-01-27 Korea Advanced Institute Of Science And Technology (Kaist) Apparatus and method for measuring thickness and profile of transparent thin film using white-light interferometer
EP2124016A1 (fr) * 2007-02-20 2009-11-25 Mitsubishi Heavy Industries, Ltd. Procédé de mesure de l'épaisseur d'un film, appareil associé, et système de fabrication pour un dispositif à couches minces

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US4899055A (en) * 1988-05-12 1990-02-06 Tencor Instruments Thin film thickness measuring method
US7304744B1 (en) 1998-12-24 2007-12-04 Sharp Kabushiki Kaisha Apparatus and method for measuring the thickness of a thin film via the intensity of reflected light
US20020030826A1 (en) * 2000-07-06 2002-03-14 Chalmers Scott A. Method and apparatus for high-speed thickness mapping of patterned thin films
US7468799B2 (en) 2003-10-27 2008-12-23 Zygo Corporation Scanning interferometry for thin film thickness and surface measurements
US7483147B2 (en) 2004-11-10 2009-01-27 Korea Advanced Institute Of Science And Technology (Kaist) Apparatus and method for measuring thickness and profile of transparent thin film using white-light interferometer
EP2124016A1 (fr) * 2007-02-20 2009-11-25 Mitsubishi Heavy Industries, Ltd. Procédé de mesure de l'épaisseur d'un film, appareil associé, et système de fabrication pour un dispositif à couches minces

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10690480B2 (en) 2017-07-13 2020-06-23 Toyota Jidosha Kabushiki Kaisha Film thickness measuring method and film thickness measuring device

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