WO2012093845A3 - 태양전지 및 이의 제조 방법 - Google Patents

태양전지 및 이의 제조 방법 Download PDF

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Publication number
WO2012093845A3
WO2012093845A3 PCT/KR2012/000073 KR2012000073W WO2012093845A3 WO 2012093845 A3 WO2012093845 A3 WO 2012093845A3 KR 2012000073 W KR2012000073 W KR 2012000073W WO 2012093845 A3 WO2012093845 A3 WO 2012093845A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
manufacturing
emitter unit
substrate
contact holes
Prior art date
Application number
PCT/KR2012/000073
Other languages
English (en)
French (fr)
Other versions
WO2012093845A2 (ko
Inventor
진윤실
심구환
최영호
장재원
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to US13/978,056 priority Critical patent/US9997647B2/en
Publication of WO2012093845A2 publication Critical patent/WO2012093845A2/ko
Publication of WO2012093845A3 publication Critical patent/WO2012093845A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

태양전지는 기판; 기판의 한쪽 면에 위치하는 에미터부; 에미터부 위에 위치하는 하부막 및 상기 하부막 위에 위치하는 상부막을 포함하는 제1 절연막; 및 제1 도전성 페이스트로 형성되며, 상기 에미터부와 전기적으로 연결되는 제1 전극을 포함하며, 제1 절연막은 도트 형상을 갖는 복수의 제1 콘택홀을 포함하고, 제1 전극의 일부분은 복수의 제1 콘택홀의 내부에 채워진다.
PCT/KR2012/000073 2011-01-05 2012-01-04 태양전지 및 이의 제조 방법 WO2012093845A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/978,056 US9997647B2 (en) 2011-01-05 2012-01-04 Solar cells and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0000856 2011-01-05
KR1020110000856A KR101729745B1 (ko) 2011-01-05 2011-01-05 태양전지 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
WO2012093845A2 WO2012093845A2 (ko) 2012-07-12
WO2012093845A3 true WO2012093845A3 (ko) 2012-11-29

Family

ID=46457839

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000073 WO2012093845A2 (ko) 2011-01-05 2012-01-04 태양전지 및 이의 제조 방법

Country Status (3)

Country Link
US (1) US9997647B2 (ko)
KR (1) KR101729745B1 (ko)
WO (1) WO2012093845A2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101295552B1 (ko) * 2011-11-16 2013-08-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101921738B1 (ko) * 2012-06-26 2018-11-23 엘지전자 주식회사 태양 전지
US11309441B2 (en) 2013-04-03 2022-04-19 Lg Electronics Inc. Solar cell
DE102013112638A1 (de) * 2013-11-15 2015-05-21 Universität Stuttgart Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium
JP5938113B1 (ja) 2015-01-05 2016-06-22 信越化学工業株式会社 太陽電池用基板の製造方法
JP6863853B2 (ja) * 2017-07-27 2021-04-21 京セラ株式会社 太陽電池素子および太陽電池モジュール
KR102498523B1 (ko) * 2019-10-16 2023-02-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법

Citations (3)

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US20100032017A1 (en) * 2008-08-05 2010-02-11 Joo-Han Bae Solar cell and method of manufacturing the same
US7700952B2 (en) * 2006-08-29 2010-04-20 Samsung Electronics Co., Ltd. Contact pad for thin film transistor substrate and liquid crystal display
KR20100137117A (ko) * 2009-06-22 2010-12-30 엘지전자 주식회사 태양 전지 및 그 제조 방법

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JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
US20070169806A1 (en) * 2006-01-20 2007-07-26 Palo Alto Research Center Incorporated Solar cell production using non-contact patterning and direct-write metallization
KR20080091105A (ko) * 2005-11-24 2008-10-09 뉴사우스 이노베이션즈 피티와이 리미티드 고효율 태양전지 제조
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Publication number Priority date Publication date Assignee Title
US7700952B2 (en) * 2006-08-29 2010-04-20 Samsung Electronics Co., Ltd. Contact pad for thin film transistor substrate and liquid crystal display
US20100032017A1 (en) * 2008-08-05 2010-02-11 Joo-Han Bae Solar cell and method of manufacturing the same
KR20100137117A (ko) * 2009-06-22 2010-12-30 엘지전자 주식회사 태양 전지 및 그 제조 방법

Also Published As

Publication number Publication date
US9997647B2 (en) 2018-06-12
US20130284259A1 (en) 2013-10-31
KR101729745B1 (ko) 2017-04-24
WO2012093845A2 (ko) 2012-07-12
KR20120079592A (ko) 2012-07-13

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