WO2012089286A8 - Beschichtungsvorrichtung mit einer hipims-leistungsquelle - Google Patents
Beschichtungsvorrichtung mit einer hipims-leistungsquelle Download PDFInfo
- Publication number
- WO2012089286A8 WO2012089286A8 PCT/EP2011/000372 EP2011000372W WO2012089286A8 WO 2012089286 A8 WO2012089286 A8 WO 2012089286A8 EP 2011000372 W EP2011000372 W EP 2011000372W WO 2012089286 A8 WO2012089286 A8 WO 2012089286A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power source
- hipims power
- coating apparatus
- cathodes
- hipims
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11701627A EP2529386A1 (de) | 2010-01-29 | 2011-01-27 | Beschichtungsvorrichtung mit einer hipims-leistungsquelle |
JP2013509452A JP5647337B2 (ja) | 2010-01-29 | 2011-01-27 | Hipims電源を備えるコーティング装置 |
US13/575,709 US20130276984A1 (en) | 2010-01-29 | 2011-01-27 | Coating apparatus having a hipims power source |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE202010001497U DE202010001497U1 (de) | 2010-01-29 | 2010-01-29 | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
DE202010001497.2 | 2010-01-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012089286A1 WO2012089286A1 (de) | 2012-07-05 |
WO2012089286A8 true WO2012089286A8 (de) | 2012-10-18 |
Family
ID=42115054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/000372 WO2012089286A1 (de) | 2010-01-29 | 2011-01-27 | Beschichtungsvorrichtung mit einer hipims-leistungsquelle |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130276984A1 (de) |
EP (1) | EP2529386A1 (de) |
JP (1) | JP5647337B2 (de) |
DE (1) | DE202010001497U1 (de) |
WO (1) | WO2012089286A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY183993A (en) * | 2011-04-20 | 2021-03-17 | Oerlikon Trading Ag | Method for supplying sequential power impulses |
DE102011018363A1 (de) * | 2011-04-20 | 2012-10-25 | Oerlikon Trading Ag, Trübbach | Hochleistungszerstäubungsquelle |
DE102011117177A1 (de) * | 2011-10-28 | 2013-05-02 | Oerlikon Trading Ag, Trübbach | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
US20140262748A1 (en) | 2011-07-15 | 2014-09-18 | Ihi Hauzer Techno Coating B.V. | Apparatus and method for the pretreatment and/or for the coating of an article in a vacuum chamber with a hipims power source |
EP2565291A1 (de) | 2011-08-31 | 2013-03-06 | Hauzer Techno Coating BV | Vakuumbeschichtungsvorrichtung und Verfahren zum Abscheiden von Nanoverbundbeschichtungen |
EP2587518B1 (de) * | 2011-10-31 | 2018-12-19 | IHI Hauzer Techno Coating B.V. | Vorrichtung und Verfahren zur Abscheidung wasserstofffreier ta-C-Schichten auf Werkstücken und Werkstück |
DE102011117994A1 (de) | 2011-11-09 | 2013-05-16 | Oerlikon Trading Ag, Trübbach | HIPIMS-Schichten |
RU2632210C2 (ru) | 2011-12-05 | 2017-10-03 | Эрликон Серфиз Солюшнз Аг, Пфеффикон | Способ реактивного распыления |
DE102011121770A1 (de) * | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
DE102012021346A1 (de) * | 2012-11-01 | 2014-08-28 | Oerlikon Trading Ag, Trübbach | Leistungsverteiler zur definierten sequenziellen Leistungsverteilung |
DE102013106351A1 (de) * | 2013-06-18 | 2014-12-18 | Innovative Ion Coatings Ltd. | Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche |
DE102014205695B4 (de) * | 2014-03-27 | 2016-01-28 | Christof-Herbert Diener | Niederdruckplasmaanlage mit sequentieller Steuerung |
EP3056587B1 (de) * | 2015-02-13 | 2020-11-18 | Walter AG | VHM-Schaftfräser mit TiAlN-ZrN-Beschichtung |
JP6512577B2 (ja) * | 2015-07-07 | 2019-05-15 | 日産自動車株式会社 | 燃料電池構成部品用表面処理部材 |
US10784091B2 (en) | 2017-09-29 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process and related device for removing by-product on semiconductor processing chamber sidewalls |
TW202340495A (zh) | 2019-02-11 | 2023-10-16 | 美商應用材料股份有限公司 | 物理氣相沉積方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE9109503U1 (de) * | 1991-07-31 | 1991-10-17 | Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier, De | |
CH689767A5 (de) * | 1992-03-24 | 1999-10-15 | Balzers Hochvakuum | Verfahren zur Werkstueckbehandlung in einer Vakuumatmosphaere und Vakuumbehandlungsanlage. |
DE4438463C1 (de) * | 1994-10-27 | 1996-02-15 | Fraunhofer Ges Forschung | Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen |
US5917286A (en) * | 1996-05-08 | 1999-06-29 | Advanced Energy Industries, Inc. | Pulsed direct current power supply configurations for generating plasmas |
DE19702187C2 (de) * | 1997-01-23 | 2002-06-27 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zum Betreiben von Magnetronentladungen |
DK0975818T3 (da) * | 1997-04-14 | 2003-01-06 | Cemecon Ceramic Metal Coatings | Fremgangsmåde og anordning til PVD belægning |
DE19937859C2 (de) * | 1999-08-13 | 2003-06-18 | Huettinger Elektronik Gmbh | Elektrische Versorgungseinheit für Plasmaanlagen |
JP4717295B2 (ja) * | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
DE10124749A1 (de) | 2001-05-21 | 2002-11-28 | Wolf-Dieter Muenz | Kombiniertes Beschichtungs Verfahren magnetfeldunterstützte Hochleistungs-Impuls-Kathodenzerstäubung und Unbalanziertes Magnetron |
US6853142B2 (en) * | 2002-11-04 | 2005-02-08 | Zond, Inc. | Methods and apparatus for generating high-density plasma |
US6806651B1 (en) * | 2003-04-22 | 2004-10-19 | Zond, Inc. | High-density plasma source |
US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
JP2005256119A (ja) * | 2004-03-12 | 2005-09-22 | Ricoh Opt Ind Co Ltd | 成膜装置 |
SE0402644D0 (sv) * | 2004-11-02 | 2004-11-02 | Biocell Ab | Method and apparatus for producing electric discharges |
US9117637B2 (en) * | 2005-11-04 | 2015-08-25 | Von Ardenne Gmbh | Redundant anode sputtering method and assembly |
GB2437080B (en) * | 2006-04-11 | 2011-10-12 | Hauzer Techno Coating Bv | A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus |
GB0608582D0 (en) * | 2006-05-02 | 2006-06-07 | Univ Sheffield Hallam | High power impulse magnetron sputtering vapour deposition |
DE102006021994B4 (de) * | 2006-05-10 | 2017-08-03 | Cemecon Ag | Beschichtungsverfahren |
KR101447302B1 (ko) * | 2006-12-12 | 2014-10-06 | 오를리콘 어드벤스드 테크놀로지스 아크티엔게젤샤프트 | 고전력 임펄스 마그네트론 스퍼터링(hipims)에서의 아크 억제 및 펄싱 |
US10784092B2 (en) * | 2007-12-07 | 2020-09-22 | Evatec Ag | Reactive sputtering with HIPIMs |
DE202009018428U1 (de) * | 2008-04-28 | 2011-09-28 | Cemecon Ag | Vorrichtung zum Vorbehandeln und Beschichten von Körpern |
DE102008021912C5 (de) * | 2008-05-01 | 2018-01-11 | Cemecon Ag | Beschichtungsverfahren |
JP5037475B2 (ja) * | 2008-11-11 | 2012-09-26 | 株式会社神戸製鋼所 | スパッタ装置 |
-
2010
- 2010-01-29 DE DE202010001497U patent/DE202010001497U1/de not_active Expired - Lifetime
-
2011
- 2011-01-27 JP JP2013509452A patent/JP5647337B2/ja active Active
- 2011-01-27 US US13/575,709 patent/US20130276984A1/en not_active Abandoned
- 2011-01-27 WO PCT/EP2011/000372 patent/WO2012089286A1/de active Application Filing
- 2011-01-27 EP EP11701627A patent/EP2529386A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2012089286A1 (de) | 2012-07-05 |
EP2529386A1 (de) | 2012-12-05 |
DE202010001497U1 (de) | 2010-04-22 |
JP2013539498A (ja) | 2013-10-24 |
US20130276984A1 (en) | 2013-10-24 |
JP5647337B2 (ja) | 2014-12-24 |
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