WO2012083542A1 - 配向膜修补设备及其修补方法 - Google Patents

配向膜修补设备及其修补方法 Download PDF

Info

Publication number
WO2012083542A1
WO2012083542A1 PCT/CN2010/080173 CN2010080173W WO2012083542A1 WO 2012083542 A1 WO2012083542 A1 WO 2012083542A1 CN 2010080173 W CN2010080173 W CN 2010080173W WO 2012083542 A1 WO2012083542 A1 WO 2012083542A1
Authority
WO
WIPO (PCT)
Prior art keywords
alignment film
plasma
detecting
defect region
repairing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2010/080173
Other languages
English (en)
French (fr)
Inventor
施翔尹
贺成明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to PCT/CN2010/080173 priority Critical patent/WO2012083542A1/zh
Publication of WO2012083542A1 publication Critical patent/WO2012083542A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers

Definitions

  • the present invention relates to an alignment film repairing device and a repairing method thereof, and more particularly to an alignment film repairing device suitable for a liquid crystal display panel and a repairing method thereof.
  • the alignment film is used for aligning the liquid crystal molecules in the alignment direction, so that the liquid crystal molecules in the liquid crystal display panel have a uniform directivity or an alignment.
  • the electric field drives the liquid crystal molecules to operate, all or part of the liquid crystal molecules need to have synchronized and consistent actions, so that the display action can be fast and consistent.
  • a new generation of alignment film coating technology uses inkjet (Inkjet) printing to cover polyimide film (PI) liquid on a thin film transistor substrate or a color filter substrate, and diffuse to achieve film formation. .
  • PI polyimide film
  • the biggest process problem with this filming technique comes from the poor state of PI when it is diffused at the edge. At the edge of the PI liquid will flow to the place where there is no coating, so that the PI droplets are not linear after fusion, and it is easy to appear wavy (Edge Wave).
  • the existing improved Edge Wave method is based on the size of the droplets. DPI (dots per inch) as a measure, DPI (dots per The higher the inch, the higher the linearity achieved.
  • a smaller PI droplet is used and a higher DPI is achieved in a denser arrangement.
  • the influencing factors include droplet discharge size, substrate surface condition and environment. Temperature and humidity, etc., it is difficult to effectively control.
  • Halo area or Edge. Area. If this Halo area is located in the display area (Active Area), there will be a noticeable whiteness at the edge of the picture at 25% gray level, so it is judged as the scrap level. Since the above phenomenon is closely related to the viscosity of the PI material, the higher the viscosity, the more the Halo can be suppressed. However, on the contrary, it is easy to cause the discharge of the ink jet head and the disadvantage of uneven diffusion of the PI droplets.
  • the alignment film inspection device After the above phenomenon is baked and heated, it is inspected in the alignment film inspection device. When the inspection device determines that the required specifications are not met, the substrates are discharged and a comprehensive film peeling step is performed. In the film peeling step, the thin film transistor substrate or the color filter substrate containing the alignment film is sent to an alignment film stripping device, and the alignment film is washed away with a stripping solution. Finally, an inkjet printing method is repeated to recoat an alignment film on the substrate.
  • Another object of the present invention is to provide an alignment film repairing method which utilizes the alignment film repairing apparatus of the present invention to perform partial repair of an alignment film and to improve an existing repairing process.
  • the alignment film repairing device of the present invention comprises a detecting device and a plasma device.
  • the detecting device is configured to detect an edge region of an alignment film to define at least one defect region.
  • the plasma device is configured to generate a plasma reaction to the at least one defect region of the alignment film to remove the at least one defect region.
  • the plasma device includes a reactive gas supply device and a plasma showerhead.
  • the reactive gas supply device is configured to supply a reactive gas
  • the plasma showerhead is configured to eject the reactive gas on the at least one defect region of the alignment film.
  • the plasma showerhead includes a plasma ejection port and a frame.
  • the plasma ejection port is used to eject the reaction gas.
  • the frame is for defining the plasma ejection port and limiting a discharge range of the reaction gas.
  • the discharge range of the reaction gas is set corresponding to the size of the defect region.
  • the size of the ejection range may be set according to a distance between the plasma shower head and the alignment film.
  • the ejection range is a rectangle, and the ejection range has a size ranging from 0.1 square millimeter to 100 square millimeters.
  • the plasma device includes an endpoint detection device for stopping the plasma reaction.
  • the plasma device is disposed on the detection device.
  • the present invention further provides an alignment film repairing method.
  • the alignment film repair method is used to repair an edge region of an alignment film. The method comprises the following steps:
  • a defect region generates a plasma reaction to remove the at least one defect region.
  • the method further comprises the step (C) of determining whether the repaired alignment film is acceptable, and if so, performing post-baking to the alignment film. Curing, if not, washing the alignment film with a stripping solution.
  • the detecting device cooperates with the plasma device to partially remove at least one defect region of the alignment film, and solves the problem that the existing alignment film process can only wash the entire alignment film through the stripping liquid. , the problem of partial patching is not possible.
  • the plasma device may be installed on the detecting device, and the at least one defect region may be removed by using the plasma device during the detecting process, thereby improving the existing repairing process.
  • FIG. 1 is a schematic view showing the repair of an alignment film repairing device according to a preferred embodiment of the present invention.
  • Figure 2 is a schematic plan view of the alignment film repair of Figure 1.
  • FIG. 3 is a schematic cross-sectional view of the plasma showerhead of FIG. 2 taken along line AB.
  • FIG. 4 is a flow chart of a method for repairing an alignment film according to a preferred embodiment of the present invention.
  • FIG. 1 is a schematic view showing the repair of an alignment film repairing device according to a preferred embodiment of the present invention.
  • the alignment film repairing apparatus of the preferred embodiment includes a detecting device 100 and a plasma device 200.
  • the solution of the alignment film 300 is printed by inkjet (Inkjet) to cover the droplets on a thin film transistor substrate or a color filter substrate, and is diffused to achieve a film formation effect.
  • the solution of the alignment film 300 is preferably polyimide (PI).
  • the alignment film 300 is covered on a thin film transistor substrate 400.
  • the thin film transistor substrate 400 includes a glass substrate 420 and a thin film transistor layer 440.
  • FIG. 2 is a schematic plan view of the alignment film repair of FIG. 1.
  • the alignment film repairing device of the present invention is used to repair an edge region of an alignment film 300, such as Edge. Wave (shown in Figure 2), Halo area (shown in Figure 1), or both.
  • the detecting device 100 is preferably an inspection machine, and includes an image sensor 120 and a pair of bit devices 140.
  • the image sensor 120 is mounted on the alignment device 140 for detecting defects of the alignment film.
  • the detecting device 100 is configured to detect an edge region of the alignment film 300 to define at least one defect region 320 (as shown in FIG. 2).
  • the image sensor is preferably a CCD image sensor or a CMOS image sensor.
  • the alignment device 140 is preferably a cross-alignment machine for moving the image sensor 120 to a desired position for detection.
  • the plasma device 200 is configured to generate a plasma reaction to the at least one defect region 320 of the alignment film 300 to remove the at least one defect region 320.
  • the plasma device 200 includes a reactive gas supply device (not shown) and a plasma showerhead 250.
  • the reaction gas supply device is for providing a reaction gas including O2, SF6, N2, He, and the like.
  • the plasma showerhead 250 is configured to eject the reactive gas on the at least one defect region 320 of the alignment film 300 (shown as the ejection range 322 of FIG. 2) to the at least one
  • the defect region 320 is plasma etched/ashed.
  • the plasma device 200 is preferably disposed on the detecting device 100 and is repaired immediately after inspection.
  • the plasma showerhead 250 can also cooperate with the movement of the alignment device 140 to remove the at least one defect region 320 at the edge of the alignment film 300.
  • the present invention does not limit the plasma device 200 to be disposed on the detecting device 100, and may be separately provided.
  • the plasma device 200 also has a radio frequency power (RF) that is well known to those skilled in the art.
  • RF radio frequency power
  • the Power system (not shown) functions to decompose the PI material of the alignment film 300 by controlling the RF power and the type of the reaction gas.
  • the PI polymer segment is interrupted by a plasma to form some volatile by-products, and the alignment film 300 located in the ejection range 322 is removed by the above mechanism.
  • FIG. 3 is a schematic cross-sectional view of the plasma showerhead of FIG. 2 along the line AB.
  • the plasma showerhead 250 includes a plasma ejection port 252 and a frame 254.
  • the plasma ejection port 252 is for discharging the reaction gas.
  • the frame 254 is used to define the plasma ejection port and to limit the ejection range 322 of the reactive gas.
  • the geometry of the plasma ejection port 252 is the same as the geometry of the ejection range 322 of the reactive gas.
  • the plasma ejection port 252 is rectangular, and the reaction gas ejection range 322 is also rectangular.
  • the present invention is not limited to the rectangular discharge port 252 of the frame 254 being rectangular, and may be any geometric shape for the purpose of facilitating the removal of the edge defect region 320.
  • the discharge range 322 of the reaction gas is set corresponding to the size of the defect region 320. Further, the size of the ejection range 322 can be set according to the distance between the plasma shower head 250 and the alignment film 300. The shorter the distance, the smaller the size of the ejection range 322, and the longer the distance, the larger the size of the ejection range 322.
  • the size of the ejection range 322 is preferably between 0.1 square millimeters and 100 square millimeters, so that the defective region 320 partially localized to the alignment film 300 can be repaired without peeling off the entire alignment film 300.
  • the plasma device 200 further includes an end point detection device (End Point Detector, EPD) (not shown) for automatically detecting the concentration of the volatile by-product to stop the plasma reaction.
  • EPD End Point Detector
  • the plasma device 200 further includes an end point detection device (End Point Detector, EPD) (not shown) for automatically detecting the concentration of the volatile by-product to stop the plasma reaction.
  • EPD End Point Detector
  • the ITO layer (not shown) on the surface of the thin film transistor layer 440 is exposed and located in the contact hole.
  • Contact Protective layer of hole not shown. Therefore, volatile by-products different from PI are produced.
  • the endpoint detecting device detects a change in the concentration of volatile byproducts different from PI, the reaction of the plasma is stopped to protect the thin film transistor layer 440.
  • the end point detecting device can also be used to protect the ITO layer, the color filter film (CF), the black matrix (BM), and the like on the color filter substrate.
  • FIG. 4 is a flow chart of a method for repairing an alignment film according to a preferred embodiment of the present invention. The method begins in step S10.
  • step S10 an edge region of the alignment film 300 is detected by a detecting device 100 to determine whether there is a defect, and if so, step S20 is performed, and if not, the next predetermined production program, step S50, is executed. It should be noted that this step is performed after the prebake procedure after inkjet coating.
  • step S20 the detecting device 100 defines at least one defective area (as shown in FIG. 2), and then performs step S30.
  • step S30 a plasma reaction is performed on the at least one defect region 320 of the alignment film 300 by using a plasma device 200 to remove the at least one defect region 320, and then step S40 is performed.
  • a plasma reaction is performed on the at least one defect region 320 of the alignment film 300 by using a plasma device 200 to remove the at least one defect region 320, and then step S40 is performed.
  • step S40 it is judged whether or not the repaired alignment film 300 is acceptable. If yes, a predetermined production process is performed, that is, step S50, and if no, step S60 is performed.
  • step S50 post-baking is performed to cure the alignment film 300.
  • step S60 the alignment film 300 is washed away with a stripping solution, that is, a film peeling process is performed to facilitate recoating.
  • the detecting device 100 cooperates with the plasma device 200 to partially remove at least one defect region of the alignment film 300, thereby solving the problem that the existing alignment film process can only be washed by the stripping liquid.
  • the entire alignment film cannot be partially repaired.
  • the plasma device 200 can also be disposed on the detecting device 100, and the at least one defect region 320 can be removed by the plasma device 200 during the detecting process, and the existing alignment film capable of being defective only is improved. Do the entire stripping process, which reduces costs and time.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)

Description

配向膜修补设备及其修补方法 技术领域
本发明是有关于一种配向膜修补设备及其修补方法，且特别是有关于一种适用于液晶显示面板的配向膜修补设备及其修补方法。
背景技术
配向膜用于施予液晶分子朝配向的方向排列，使得液晶显示面板中的液晶分子拥有一致的方向性，或是定向排列。当电场驱动液晶分子动作时，全部或局部的液晶分子需要有同步且一贯性的动作，使得显示动作能快速且一致。
新一代的配向膜涂布技术是以喷墨(Inkjet)印刷的方式，使聚酰亚胺(polyimide,PI)液覆盖在薄膜晶体管基板或是彩色滤光基板上，经过扩散达到成膜的效果。此成膜技术的最大制程问题来自于PI在边缘扩散时的状态不佳。在边缘PI液会流到没有涂布的地方，使得PI液滴融合后直线性不佳，易呈现波浪状(Edge Wave)。现有改良Edge Wave方法是以液滴的大小进行改善。以DPI(dots per inch)来做为一个衡量指标，DPI(dots per inch)越高，达成的直线性就越高。具体上即采用较小的PI液滴并以较密集的排列达成较高的DPI，实际仍须视边缘液滴扩散的状况而有所不同，影响因素有液滴吐出大小、基板表面状况及环境温湿度等等，难以有效稳定控制。
另外，因边缘干燥速度不同，使得在边缘会形成膜厚不均区域，称之为Halo area或Edge area。此Halo area若位于显示区(Active area)，则将于25%灰阶下的画面边缘会有明显偏白的现象，因此判定为报废等级。由于上述现象与PI材料粘度息息相关，粘度越高，越能抑制Halo area，但反而容易造成喷墨头的吐出困难以及PI液滴扩散不均的缺点。
上述现象经过烘烤加热后，会在配向膜检查设备中检查出来，当检查设备判定不符合所需之规格时，则会将此等基板排出，并进行一全面性的膜剥离步骤。所述膜剥离步骤即将含有上述配向膜之薄膜晶体管基板或是彩色滤光基板送至配向膜剥膜装置，以剥膜液洗去配向膜。最后，再重复喷墨印刷方式于此基板重新涂布一配向膜。
然而，在前述的方法中，将配向膜先移除再重新涂布一次的方式，相当花费时间，并且造成更多材料以及能源的损耗或浪费，使得成本提高。
 技术问题
本发明的目的在于提供一种配向膜修补设备，其通过一检测装置配合一等离子装置局部的去除配向膜的边缘区域，以解决上述问题。
本发明的另一目的在于提供一种配向膜修补方法，所述配向膜修补方法利用本发明的配向膜修补设备，以执行配向膜的局部修补，并改良现有的修补流程。
 技术解决方案
为达上述的目的，本发明采取以下技术方案。即本发明的配向膜修补设备包括一检测装置及一等离子装置。所述检测装置用于检测一配向膜的边缘区域，以定义出至少一缺陷区域。所述等离子装置用于对所述配向膜的所述至少一缺陷区域产生等离子反应以去除所述至少一缺陷区域。具体而言，等离子装置包括一反应气体供应装置及一等离子喷头。所述反应气体供应装置用于供给一反应气体，且所述等离子喷头用于喷出所述反应气体在所述配向膜的所述至少一缺陷区域上。
更进一步的说，所述等离子喷头包括一等离子喷出口以及一框体。所述等离子喷出口用于喷出所述反应气体。所述框体用于界定出所述等离子喷出口，并限制所述反应气体的喷出范围。此外，所述反应气体的喷出范围是对应于所述缺陷区域的大小而设定。进一步的说，所述喷出范围的大小可根据所述等离子喷头与所述配向膜之间的距离而设定。优选的，所述喷出范围为矩形，且所述喷出范围的大小介于0.1平方毫米到100平方毫米之间。
在一较佳实施例中，所述等离子装置包括一终点侦测装置，用于停止等离子的反应。
在一较佳实施例中，所述等离子装置设置在所述检测装置上。
为达上述的另一目的，本发明另提供一种配向膜修补方法。所述配向膜修补方法用于修补一配向膜的边缘区域。所述方法包含下列步骤：
(A)采用一检测装置检测所述配向膜的边缘区域，以判断是否有缺陷，如有，则定义出至少一缺陷区域；以及(B)采用一等离子装置对所述配向膜的所述至少一缺陷区域产生等离子反应以去除所述至少一缺陷区域。
在本发明另一较佳实施例中，在步骤(B)之后，所述方法还包括步骤(C)判断修补后的所述配向膜是否合格，如果是，则进行后烘使所述配向膜固化，如果否，则以一剥膜液洗去所述配向膜。
 有益效果
根据本发明配向膜修补设备及其修补方法，通过所述检测装置配合等离子装置局部的去除配向膜的至少一缺陷区域，解决了现有的配向膜制程仅能通过剥膜液洗去整个配向膜，无法进行局部修补的问题。此外，所述等离子装置还可装设于检测装置上，在检测过程中即可利用等离子装置对所述至少一缺陷区域做去除，改良了现有的修补流程。
 附图说明
图1为本发明较佳实施例的配向膜修补设备的修补示意图。
图2为图1的配向膜修补示意俯视图。
图3为图2的等离子喷头沿AB连线的剖面示意图。
图4为本发明较佳实施例的配向膜修补方法的流程图。
 本发明的最佳实施方式
本发明说明书提供不同的实施例来说明本发明不同实施方式的技术特征。其中，实施例中的各组件的配置是为清楚说明本发明揭示的内容，并非用以限制本发明。且不同实施例中图式标号的部分重复，是为了简化说明，并非意指不同实施例之间的关联性。
请参照图1，图1为本发明较佳实施例的配向膜修补设备的修补示意图。本较佳实施例的配向膜修补设备包含一检测装置100以及一等离子装置200。配向膜300的溶液透过喷墨(Inkjet)印刷的方式，使液滴覆盖在一薄膜晶体管基板或是一彩色滤光基板上，经过扩散达到成膜的效果。其中所述配向膜300的溶液较佳为聚酰亚胺(polyimide,PI)。在此较佳实施例中，配向膜300覆盖在一薄膜晶体管基板400，所述薄膜晶体管基板400包含一玻璃基板420及一薄膜晶体管层440。
请参照图1及图2，图2为图1的配向膜修补示意俯视图。本发明的配向膜修补设备用于修补一配向膜300的边缘区域，例如Edge Wave（如图2所示）、Halo area（如图1所示） 或两者皆有。
所述检测装置100较佳为一检查机(Inspection)，包括一图像传感器120与一对位装置140。所述图像传感器120架设于所述对位装置140上，用于检测所述配向膜的缺陷。在本实施例中，所述检测装置100用于检测所述配向膜300的边缘区域，以定义出至少一缺陷区域320（如图2所示）。所述图像传感器较佳为一CCD图像传感器或CMOS图像传感器。所述对位装置140较佳为十字对位机台，用于移动所述图像传感器120到所需的位置，以进行检测。
所述等离子装置200用于对所述配向膜300的所述至少一缺陷区域320产生等离子反应，以去除所述至少一缺陷区域320。具体来说，所述等离子装置200包括一反应气体供应装置（未图示）及一等离子喷头250。所述反应气体供应装置用来提供一反应气体，所述反应气体包括O2、SF6、N2、He等。所述等离子喷头250用于喷出所述反应气体在所述配向膜300的所述至少一缺陷区域320上（如图2的喷出范围322所示）上，以对所述所述至少一缺陷区域320进行等离子蚀刻/灰化。所述等离子装置200较佳可设置在所述检测装置100上，进行检查后立即进行修补。因此，所述等离子喷头250还可配合所述对位装置140的移动，以移除配向膜300边缘的所述至少一缺陷区域320。然而，本发明并未限制所述等离子装置200必须设置在所述检测装置100上，亦可各别设置。
另外，所述等离子装置200还具有本领域一般技术人员所熟知的一射频功率(RF Power)系统（未图示），通过控制射频功率与反应气体的种类以对配向膜300的PI材料进行分解(Deposition)的作用。PI高分子链段被等离子打断键结(chains)，而生成一些挥发性副产物，通过上述机制去除位于喷出范围322的配向膜300。
请参照图2及图3，图3为图2的等离子喷头沿AB连线的剖面示意图。所述等离子喷头250包括一等离子喷出口252以及一框体254。所述等离子喷出口252用于喷出所述反应气体。所述框体254用于界定出所述等离子喷出口，并限制所述反应气体的喷出范围322。简言之，所述等离子喷出口252的几何图形即与反应气体的喷出范围322的几何图形相同。举例来说，所述等离子喷出口252为矩形，则反应气体喷出范围322的也为矩形。然而，本发明并不限所述框体254限制的等离子喷出口252为矩形，也可为任意几何图形，以达到方便去除边缘的缺陷区域320的目的。
所述反应气体的喷出范围322是对应于所述缺陷区域320的大小而设定。进一步的说，所述喷出范围322的大小可根据所述等离子喷头250与配向膜300之间的距离而设定。所述距离越短所述喷出范围322的大小就越小、距离越长所述喷出范围322的大小就越大。所述喷出范围322的大小优选的介于0.1平方毫米到100平方毫米之间，使得可以对配向膜300局部的缺陷区域320进行修补，而不需将整个配向膜300剥离。
在另一实施例中，所述等离子装置200还包括一终点侦测装置(End Point Detector, EPD)（未图示），用于自动侦测所述挥发性副产物的浓度，以停止等离子反应。举所述薄膜晶体管基板400为例，当等离子蚀刻/灰化的作用将配向膜300的PI材质去除之后，则暴露出所述薄膜晶体管层440表面的ITO层（未图示）及位于接触孔(Contact hole)的保护层（未图示）。因此会产生不同于PI的挥发性副产物。而当所述终点侦测装置侦测不同于PI的挥发性副产物浓度改变时，即停止等离子的反应，以保护所述薄膜晶体管层440。同样的，所述终点侦测装置也可用于保护彩色滤光基板上的ITO层、彩色滤光膜（CF）、黑色矩阵（BM）等。
以下将详细说明利用本发明较佳实施例的配向膜修补方法。在此较佳实施例中，本修补方法是利用上述较佳实施例的配向膜修补设备来实施。请一并参照图1、图2及图4，图4为本发明较佳实施例的配向膜修补方法的流程图。所述方法开始于步骤S10。
在步骤S10中，采用一检测装置100检测所述配向膜300的边缘区域，以判断是否有缺陷，如果是，则执行步骤S20，如果否，则执行下一个预定制作程序，即步骤S50。需注意的是，此步骤是在喷墨涂布后的预烤(prebake)程序之后实施。
在步骤S20中，所述检测装置100定义出至少一缺陷区域（如图2所示），然后执行步骤S30。
在步骤S30中，采用一等离子装置200对所述配向膜300的所述至少一缺陷区域320产生等离子反应以去除所述至少一缺陷区域320，然后执行步骤S40。其细节可参考前述，在此不予赘述。
在步骤S40中，判断修补后的所述配向膜300是否合格，如果是，则进行一预定制作程序，即步骤S50，如果否，则执行步骤S60。
在步骤S50中，进行后烘，使配向膜300固化。
在步骤S60中，以一剥膜液洗去所述配向膜300，即进行一膜剥离程序，以利重新涂布。
根据本发明配向膜修补设备及其修补方法，通过所述检测装置100配合等离子装置200局部的去除配向膜300的至少一缺陷区域，解决了现有的配向膜制程仅能通过剥膜液洗去整个配向膜，无法进行局部修补的问题。此外，所述等离子装置200还可装设于检测装置100上，在检测过程中即可利用等离子装置200对所述至少一缺陷区域320做去除，改良了现有仅能对有缺陷的配向膜做全部剥离的流程，进而降低了成本以及时间。
虽然本发明已用较佳实施例揭露如上，然其非用并以限定本发明，本发明所属技术领域中具有通常知识者，在不脱离本发明的精神和范围内，当可作各种的更动与润饰，因此本发明的保护范围当视后附的申请专利范围所界定者为准。
 本发明的实施方式
工业实用性
序列表自由内容

Claims (18)

  1. 一种配向膜修补设备，其特征在于，包括：
    一检测装置，用于检测一配向膜的边缘区域，以定义出至少一缺陷区域，其中所述检测装置包括一图像传感器，用于检测所述配向膜；以及一对位装置，用于移动所述图像传感器；以及
    一等离子装置，用于对所述配向膜的所述至少一缺陷区域产生等离子反应以去除所述至少一缺陷区域。
  2. 根据权利要求1所述的配向膜修补设备，其特征在于，所述等离子装置包括：
    一反应气体供应装置，用于供给一反应气体；以及
    一等离子喷头，用于喷出所述反应气体在所述配向膜的所述至少一缺陷区域上。
  3. 根据权利要求2所述的配向膜修补设备，其特征在于，所述等离子喷头包括：
    一等离子喷出口，用于喷出所述反应气体；以及
    一框体，用于限制所述等离子喷出口喷出所述反应气体的喷出范围。
  4. 根据权利要求3所述的配向膜修补设备，其特征在于，所述反应气体的喷出范围是对应于所述至少一缺陷区域的大小而设定。
  5. 根据权利要求3所述的配向膜修补设备，其特征在于，所述喷出范围的大小是根据所述等离子喷头与所述配向膜之间的距离而设定。
  6. 根据权利要求3所述的配向膜修补设备，其特征在于，所述喷出范围的大小介于0.1平方毫米到100平方毫米之间。
  7. 根据权利要求2所述的配向膜修补设备，其特征在于，所述等离子装置包括一终点侦测装置，用于自动侦测一挥发性副产物的浓度，以停止等离子反应。
  8. 根据权利要求1所述的配向膜修补设备，其特征在于，所述等离子装置设置在所述检测装置上。
  9. 一种配向膜修补设备，其特征在于，包括：
    一检测装置，用于检测一配向膜的边缘区域，以定义出至少一缺陷区域；以及
    一等离子装置，用于对所述配向膜的所述至少一缺陷区域产生等离子反应以去除所述至少一缺陷区域。
  10. 根据权利要求9所述的配向膜修补设备，其特征在于，所述等离子装置包括：
    一反应气体供应装置，用于供给一反应气体；以及
    一等离子喷头，用于喷出所述反应气体在所述配向膜的所述至少一缺陷区域上。
  11. 根据权利要求10所述的配向膜修补设备，其特征在于，所述等离子喷头包括：
    一等离子喷出口，用于喷出所述反应气体；以及
    一框体，用于限制所述等离子喷出口喷出所述反应气体的喷出范围。
  12. 根据权利要求11所述的配向膜修补设备，其特征在于，所述反应气体的喷出范围是对应于所述至少一缺陷区域的大小而设定。
  13. 根据权利要求11所述的配向膜修补设备，其特征在于，所述喷出范围的大小是根据所述等离子喷头与所述配向膜之间的距离而设定。
  14. 根据权利要求11所述的配向膜修补设备，其特征在于，所述喷出范围的大小介于0.1平方毫米到100平方毫米之间。
  15. 根据权利要求10所述的配向膜修补设备，其特征在于，所述等离子装置包括一终点侦测装置，用于自动侦测一挥发性副产物的浓度，以停止等离子反应。
  16. 根据权利要求9所述的配向膜修补设备，其特征在于，所述等离子装置设置在所述检测装置上。
  17. 一种配向膜修补方法，用于修补一配向膜的边缘区域，其特征在于，包括下列步骤：
    (A) 采用一检测装置检测所述配向膜的边缘区域，以判断是否有缺陷，如果是，则定义出至少一缺陷区域；以及
    (B)采用一等离子装置对所述配向膜的所述至少一缺陷区域产生等离子反应以去除所述至少一缺陷区域。
  18. 根据权利要求17所述的配向膜修补方法，其特征在于：在步骤（B）之后，所述方法还包括步骤：
    (C)判断修补后的所述配向膜是否合格，如果是，则进行后烘使所述配向膜固化，如果否，则以一剥膜液洗去所述配向膜。
PCT/CN2010/080173 2010-12-23 2010-12-23 配向膜修补设备及其修补方法 Ceased WO2012083542A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/080173 WO2012083542A1 (zh) 2010-12-23 2010-12-23 配向膜修补设备及其修补方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/080173 WO2012083542A1 (zh) 2010-12-23 2010-12-23 配向膜修补设备及其修补方法

Publications (1)

Publication Number Publication Date
WO2012083542A1 true WO2012083542A1 (zh) 2012-06-28

Family

ID=46313042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/080173 Ceased WO2012083542A1 (zh) 2010-12-23 2010-12-23 配向膜修补设备及其修补方法

Country Status (1)

Country Link
WO (1) WO2012083542A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024002484A1 (en) * 2022-06-30 2024-01-04 Glas Trösch Ag Apparatus for removing a protective film from and measuring optical properties of a coated flat glass product

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003121810A (ja) * 2002-09-02 2003-04-23 Seiko Epson Corp 液晶パネルの製造装置および液晶パネルの製造方法
CN1442737A (zh) * 2003-04-14 2003-09-17 饭沼精密机械(苏州)有限公司 液晶显示装置的制造方法
CN1545636A (zh) * 2001-08-27 2004-11-10 Icd股份有限公司 利用等离子体去除衬底上涂布的有机对准层并恢复衬底的方法
CN1742226A (zh) * 2003-02-18 2006-03-01 Icd股份有限公司 利用等离子体选择性地去除涂覆于形成在衬底上的负型光致抗蚀剂上的聚酰亚胺配向层并再利用衬底的方法
CN102103291A (zh) * 2010-12-17 2011-06-22 深圳市华星光电技术有限公司 配向膜修补设备及其修补方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1545636A (zh) * 2001-08-27 2004-11-10 Icd股份有限公司 利用等离子体去除衬底上涂布的有机对准层并恢复衬底的方法
JP2003121810A (ja) * 2002-09-02 2003-04-23 Seiko Epson Corp 液晶パネルの製造装置および液晶パネルの製造方法
CN1742226A (zh) * 2003-02-18 2006-03-01 Icd股份有限公司 利用等离子体选择性地去除涂覆于形成在衬底上的负型光致抗蚀剂上的聚酰亚胺配向层并再利用衬底的方法
CN1442737A (zh) * 2003-04-14 2003-09-17 饭沼精密机械(苏州)有限公司 液晶显示装置的制造方法
CN102103291A (zh) * 2010-12-17 2011-06-22 深圳市华星光电技术有限公司 配向膜修补设备及其修补方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024002484A1 (en) * 2022-06-30 2024-01-04 Glas Trösch Ag Apparatus for removing a protective film from and measuring optical properties of a coated flat glass product

Similar Documents

Publication Publication Date Title
CN102103291B (zh) 配向膜修补设备及其修补方法
CN101097334B (zh) 液晶显示板及其制造方法
TWI624349B (zh) 用於壓印裝置的調整方法、壓印方法、及物品製造方法
US10139680B2 (en) Method of manufacturing display panel, display panel, and display device
EP3200021B1 (en) Array substrate, manufacturing method thereof, and display device
US20160011451A1 (en) Method for manufacturing display panel and transfer plate
WO2014187105A1 (zh) 显示面板的切割方法及显示装置
JP2016207882A (ja) ウエットエッチング装置、ウエットエッチング方法、およびこれらを用いた半導体装置の製造方法
CN100421018C (zh) 一种tft lcd阵列基板结构及其制造方法
WO2013082846A1 (zh) 取向膜修复系统
WO2012083542A1 (zh) 配向膜修补设备及其修补方法
CN102867745B (zh) 一种改善晶圆内图案临界尺寸均匀度的蚀刻方法和系统
WO2013075362A1 (zh) 涂布装置及涂布方法
US8075790B2 (en) Film removal method and apparatus
TWI231872B (en) Manufacturing method of liquid crystal display device and its device
JP5339744B2 (ja) プロキシミティ露光装置、プロキシミティ露光装置の基板移動方法、及び表示用パネル基板の製造方法
CN101717935B (zh) 基板的金属层的蚀刻方法
KR100672632B1 (ko) 액정표시소자의 약액교환방법 및 그 장치
KR100652062B1 (ko) 인쇄판의 제조방법
WO2007100099A1 (ja) 基板処理装置及び基板処理方法
JP3716854B2 (ja) 液晶パネルの製造方法
CN221094036U (zh) 蚀刻装置
KR20130060449A (ko) 질소 가스를 이용한 터치 스크린 패널 제조방법 및 이에 의하여 제조된 터치 스크린 패널
JP3610971B2 (ja) 液晶パネルの製造装置および液晶パネルの製造方法
JP4679403B2 (ja) 基板乾燥装置、基板乾燥方法、及び基板の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10860969

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10860969

Country of ref document: EP

Kind code of ref document: A1