WO2012080014A1 - Boîtier et procédé de fabrication d'un boîtier pour un composant optoélectronique - Google Patents

Boîtier et procédé de fabrication d'un boîtier pour un composant optoélectronique Download PDF

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Publication number
WO2012080014A1
WO2012080014A1 PCT/EP2011/071720 EP2011071720W WO2012080014A1 WO 2012080014 A1 WO2012080014 A1 WO 2012080014A1 EP 2011071720 W EP2011071720 W EP 2011071720W WO 2012080014 A1 WO2012080014 A1 WO 2012080014A1
Authority
WO
WIPO (PCT)
Prior art keywords
housing
connection
surface area
conductor
region
Prior art date
Application number
PCT/EP2011/071720
Other languages
German (de)
English (en)
Inventor
Harald JÄGER
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to KR1020137015924A priority Critical patent/KR101526087B1/ko
Publication of WO2012080014A1 publication Critical patent/WO2012080014A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present application relates to a housing and a
  • Optoelectronic component and an optoelectronic component with such a housing are Optoelectronic component and an optoelectronic component with such a housing.
  • ceramic-based packages are often used, in particular for components having a comparatively high output power, since these are distinguished by high aging stability and good heat dissipation properties.
  • the manufacture of these housings is comparatively complicated and expensive. The production of cheaper
  • Plastic housings is often complicated by the fact that many plastics have insufficient aging stability, for example due to degradation caused by ultraviolet radiation generated in the semiconductor chip.
  • Plastics often have a comparatively poor adhesion to lead frames.
  • One object is to provide a housing which has a high mechanical stability, high radiation stability and high aging stability and at the same time is simple and inexpensive to produce. Furthermore, a should Be specified method, with which a housing can be easily and reliably produced.
  • Housing body has a connection region which mechanically connects the first connection conductor and the second connection conductor.
  • the housing body has a surface area which at least the connection area on the side facing away from the mounting surface
  • connection area and the connection area are partially covered.
  • the housing body thus has two subregions which can be optimized with regard to different, in particular mutually different, properties.
  • connection area and the connection area are preferably, the connection area and the connection area.
  • connection area preferably has one
  • an epoxy or a thermoplastic such as PPA, LCP (Liquid Crystal Polymer) or PEEK is suitable.
  • the material at least
  • Temperatures of 250 ° C, preferably at least 400 ° C withstands without showing a significant degradation or deformation. The risk of damage to the housing during its installation, for example by means of soldering, is thus reduced.
  • connection region is preferably selected such that it has good adhesion to the connection conductors and the connection conductors are mechanically stable
  • Connection area can be selected largely independently of its optical properties.
  • the material may also be absorbing, for example black, for radiation in the visible spectral range.
  • the surface area is preferably designed such that it has a high radiation stability, in particular a higher radiation stability than the connecting area, in particular to radiation in the ultraviolet
  • the material of the surface area contains a silicone. Silicone is characterized by a high radiation stability.
  • the material of the surface area is filled with particles suitable for electromagnetic radiation, especially in the visible spectral range, are reflective.
  • particles suitable for electromagnetic radiation especially in the visible spectral range, are reflective.
  • titania particles are suitable.
  • the housing body extends in the vertical direction, ie in a direction perpendicular to the mounting surface, preferably between the mounting surface and an upper side.
  • the upper side is preferably formed at least in regions by the surface region.
  • At least one region of the upper side preferably extends in the vertical direction beyond the first connection conductor and / or the second connection conductor.
  • the top is preferably completely formed by the surface area.
  • connection area seen from the top may be present
  • a outer surface bounding the housing body in a lateral direction is preferably formed only in regions, in particular in an area adjoining the upper side, by means of the surface region.
  • the housing body on the side facing away from the mounting surface to the
  • first connection conductor and / or the second connection conductor extend in a direction perpendicular to the mounting surface
  • At least one connection conductor preferably both
  • Mounting surface can be contacted electrically.
  • an optoelectronic semiconductor chip is preferably arranged in the housing and furthermore preferably in an electrically conductive manner with the first connection conductor and the second
  • Connection conductor connected. Further preferred is the
  • the encapsulation may also be designed as a multilayer. For example, one may be attached to a side surface of the
  • a partial layer of the encapsulation covering the semiconductor chip on the side facing away from the carrier is preferably formed transparent or at least translucent for the generated radiation. Furthermore, in the encapsulation or at least in a partial layer of the
  • connection conductors are partially transformed by means of a first molding compound to form a connecting region of a housing body.
  • the connection region mechanically connects the first connection conductor and the second connection conductor.
  • the connecting region is partially deformed by means of a second molding compound.
  • the formation of the housing body thus takes place in two successive conversion steps.
  • the first molding compound and the second molding compound are expediently different from one another with respect to the material.
  • Connection area and / or the surface area by means of casting, injection molding or
  • the cleaning step can also be carried out after the forming by means of the second molding compound.
  • the cleaning step can be carried out, for example, by means of a plasma process, electrolytically or mechanically, for example by means of a particle jet with or without liquid.
  • a cleaning step may be carried out after the forming of the bonding region.
  • the connecting conductors are preferably in a composite, which is provided for the particular simultaneous production of a plurality of housings.
  • the housing can be separated from the composite.
  • Outer surface of the housing body is preferably at
  • the housing is manufactured in a composite and at least one
  • the method described is particularly suitable for producing a housing described above. in the
  • Figure 1 shows an embodiment of a housing in
  • FIGS. 2A to 2D show an exemplary embodiment of a method for producing a housing on the basis of a schematic sectional view
  • FIG. 3 shows a first embodiment of a
  • Figure 4 shows a second embodiment of a
  • housing 1 shows an embodiment of a housing in a schematic sectional view, wherein the housing 1 is formed as a surface-mountable housing, which is provided for the attachment of a semiconductor chip.
  • the housing 1 has a housing body 2, which is formed as a polymer-based plastic molding.
  • the housing body 2 is connected to a first connection conductor 31 and a second connection conductor 32 is formed.
  • Terminal conductor and the second terminal conductor form a lead frame for the housing.
  • the housing body 2 has a connection region 21 and a surface region 22 directly adjacent to the connection region.
  • the connection region 21 directly adjoins the first connection conductor 31 and the second connection conductor 32 and mechanically connects the connection conductors to one another.
  • the housing body, in particular the connection area and the surface area, are
  • the connecting region forms a mounting surface 11 provided for mounting the housing.
  • the surface region 22 is formed on the side facing away from the mounting surface 11 of the connecting portion 21 and forms an upper surface 12 of the housing body 2. Die
  • connection region mechanical stability is preferably already ensured by the connection region, so that the material for the surface area with regard to other aspects, such as radiation stability or simple
  • connection conductors 31, 32 each have, in the side view, an undercut 35, which is designed to be stepped in an exemplary manner.
  • an improved toothing of the connection conductors with the housing body 2, in particular with the connection region 21, is achieved.
  • the mechanical stability of the housing is thereby increased.
  • the housing body 2 In a vertical direction, ie in a direction perpendicular to the mounting surface 11 extending direction, the housing body 2 extends between the mounting surface and the top of the housing body. From the top 12 ago is in the
  • connection conductors 31, 32 partially exposed.
  • the surface region 22 of the housing body 2 forms a side surface 250 of the recess 25.
  • the housing body has a frame-like region 251, which rotates the recess in the lateral direction. In the frame-like region, the upper surface 12 of the case body 2 is completely formed by the surface portion 22.
  • Housing body 2 preferably exclusively by the
  • Connection area 21 formed. The bottom surface is flush with the connection conductors 31, 32 from.
  • connection region 21 is protected from the radiation of the semiconductor chip.
  • Housing body is exposed to only a comparatively low radiation intensity.
  • the connecting region 21 can therefore also be exposed.
  • connection area can be formed in the preparation in a simple manner during singulation by means of cutting through the connection area and surface area.
  • the surface region 22 can completely cover the connection region but also on the side of the housing body facing the outer surface and form the outer surface 26.
  • the connecting conductors 31, 32 extend in the vertical direction partially completely through the housing body 2, in particular the connecting region 21, therethrough.
  • One of the mounting surface 11 facing the first external contact surface 311 of the first lead 31 and a second external external contact surface 311 of the first lead 31 and a second external external contact surface 311 of the first lead 31 is a second external contact surface 311 of the first lead 31.
  • Contact surface 321 of the second connection conductor 32 are provided for external electrical contacting of the housing body by the mounting surface.
  • connection conductors 31, 32 form a first connection surface 312 or a second connection surface 312 provided for an electrically conductive connection to the semiconductor chip
  • the surface area 22 is preferably based on a silicone. Silicone is characterized by a high stability against electromagnetic radiation, in particular
  • the silicone is preferably filled with particles which have a high reflectivity for radiation in the visible spectral range and / or ultraviolet
  • Titanium dioxide particles The surface area preferably has a thickness of at least 30 ⁇ m. The thicker the surface area, the larger particles can be embedded in the surface area. Preferably, a thickness of the
  • connection region 21 does not have to be radiation-stable.
  • an epoxy material can be used which is typically used for the encapsulation of electronic components.
  • Such a typically black epoxy material is characterized by high mechanical stability, good adhesion to metals typically used for lead frames, and low thermal resistance, and is due to its wide use for electronic devices
  • the material for the connection region 21 may also contain a hybrid material with an epoxide and a silicone, wherein the epoxide content is preferably between 20% and 80% inclusive, more preferably between 30% and 70% inclusive.
  • connection region 21 may also contain another high-temperature-resistant, in particular thermoplastic material, for example a hybrid material with an epoxy and a silicone, PPA (polyphthalamide), LCP (liquid crystal polymer) or PEEK (polyetheretherketone).
  • thermoplastic material for example a hybrid material with an epoxy and a silicone, PPA (polyphthalamide), LCP (liquid crystal polymer) or PEEK (polyetheretherketone).
  • FIGS. 2A to 2D An exemplary embodiment of a method for producing a housing is shown schematically in FIGS. 2A to 2D in FIG Section view shown. For ease of illustration, only the production of a housing is shown.
  • the housings are manufactured in a composite in which the respective areas provided for a housing are arranged side by side, in particular in a strip-shaped or matrix-shaped manner, wherein the individual housings emerge by separating the composite.
  • a leadframe is provided with a first lead 31 and a second lead 32.
  • the leadframe can be formed, for example, from a flat copper sheet, which can be completely or at least partially provided with a coating for improved solderability (not explicitly shown).
  • the coating may contain silver, nickel, gold or palladium or a metallic alloy with at least one of said materials, for example nickel-gold or nickel-palladium-gold.
  • the connecting conductors 31, 32 each have undercuts 35 for improving the mechanical toothing with the housing body to be subsequently formed. Connecting conductors with such undercuts can be produced, for example, by means of etching and / or mechanical, for example extrusion, punching and / or embossing.
  • the first connection conductor 31 and the second connection conductor 32 are formed by means of a first molding compound and thus mechanically stably connected to one another.
  • a transfer molding process or an injection molding process is suitable for the forming.
  • the cured molding compound forms a connection region 21 of a housing body 2.
  • the connecting region 21 is partially transformed by means of a second molding compound, so that a surface region 22 is formed for the housing body.
  • the connection area is formed only on one side, the one for the assembly of the finished
  • Asked housing opposite mounting surface is located.
  • the starting material for the molding compositions can each in
  • Liquid form or as a solid Liquid form or as a solid.
  • Cleaning step for example by means of a plasma process, an electrolytic process, in particular in conjunction with a
  • Material of the molding material can be removed.
  • Such a cleaning step can also be carried out after the forming by means of the second molding compound to
  • An outer surface 26 of the housing 1 is formed when separating the composite into a plurality of housings after the formation of the housing body with the connection region 21 and the surface region 22.
  • the singulation can be done mechanically, for example by means of sawing or stamping.
  • the separation into the individual housings preferably takes place only after the
  • FIG. 10 A first exemplary embodiment of an optoelectronic component with a housing described in connection with FIGS. 1 and 2A to 2D is shown schematically in a sectional view in FIG.
  • the optoelectronic component 10 has a housing 1, in which a semiconductor chip 4 is arranged.
  • the semiconductor chip 4 has an epitaxially produced semiconductor body 43 with a
  • the semiconductor layer sequence comprises an active region 40, which is provided for generating radiation, and which is arranged between a first one
  • Semiconductor layer 41 and a second semiconductor layer 42 is arranged with a different conductivity type.
  • the semiconductor body 43 is arranged on a carrier 45, which mechanically stabilizes the semiconductor body 43.
  • Semiconductor body is no longer required for mechanical stabilization and can therefore be removed.
  • the carrier 45 facing the first semiconductor layer 41 is connected by means of a first connection layer 46 with one for the Contacting the semiconductor chip provided first
  • the first contact surface is in an area of the first
  • Terminal layer 46 is arranged, which is exposed by removing the semiconductor body 43.
  • the second semiconductor layer 42 is electrically conductively connected by means of a second connection layer 47 through the carrier 45 to a second contact surface 471, which is arranged on the side of the carrier 45 facing away from the semiconductor body 43.
  • the semiconductor body 43 is by means of a connecting layer 50, for example a solder or an electrically conductive adhesive layer, mechanically stable and electrically conductively connected to the carrier, for example a silicon or germanium ⁇ carrier.
  • a connecting layer 50 for example a solder or an electrically conductive adhesive layer, mechanically stable and electrically conductively connected to the carrier, for example a silicon or germanium ⁇ carrier.
  • first connection layer 46 and the second connection layer 47 are an insulation layer 48,
  • connection layers For example, an oxide layer or a nitride layer, which electrically forms the connection layers
  • the insulating layer 48 further covers the side surfaces of the recess 44 to avoid an electrical short circuit of the active region 40.
  • a radiation exit surface of the semiconductor body 43 facing away from the carrier 45 is free of external electrical contacts, so that a shielding of the active region in the Operation of the semiconductor chip generated radiation can be avoided.
  • To increase the Auskoppeleffizienz is remote from the carrier 45 radiation exit surface of
  • the second contact surface 471 is with the first
  • the first contact surface 461 is via a connecting line, for example a
  • Terminal conductor 32 of the housing 1 connected.
  • the semiconductor chip 4 is embedded in an encapsulation 7.
  • the encapsulation 7 is in this embodiment
  • a first layer adjoining the side surfaces of the semiconductor body 4 is formed as a reflector layer 72.
  • the reflector layer may be formed as a silicone layer in which particles, for example titanium dioxide particles, are embedded in order to increase the reflectivity.
  • Reflector layer radiation that would otherwise escape laterally from the semiconductor chip 4, are reflected directly into this back and then from the top side
  • a second sub-layer of the encapsulation is formed, which is designed as a radiation-transmissive layer 71.
  • the radiation-transmissive layer 71 covers the radiation exit surface of the semiconductor chip 4.
  • the permeable layer 71 may be used for complete or at least partial conversion in the semiconductor chip 4 be generated radiation radiation converter embedded.
  • the radiation converters may be distributed homogeneously or substantially homogeneously in the permeable layer 71.
  • the radiation conversion material may also be formed inhomogeneous in the permeable layer, for example due to sedimentation substantially at the interface to the reflector layer 72 and / or at the
  • FIG. 1 A second exemplary embodiment of an optoelectronic component is shown schematically in a sectional view in FIG. This second embodiment corresponds essentially to the first embodiment described in connection with FIG.
  • the second semiconductor layer 42 arranged on the side of the active region 40 facing away from the carrier is by means of a
  • Semiconductor layer 41 is contacted by the carrier through the first contact surface 461 electrically conductive.
  • the first connection layer 46 for example a
  • Silver layer serves as a mirror layer for the radiation generated in the active region 40.
  • a radiation conversion element 8 is arranged on the semiconductor body 43.
  • the radiation conversion element 8 is
  • a prefabricated platelets which by means of an adhesive layer, for example a
  • the radiation conversion element 8 can be formed, for example, as a ceramic plate, in which the particles intended for radiation conversion are combined to form a ceramic.
  • the radiation conversion element 8 may be formed by a matrix material, for example an epoxy or a silicone, in which the radiation converters are embedded.
  • the transmissive layer 71 is formed so as to form an optical element 73, for example one
  • the housing is also suitable for semiconductor chips in which the growth substrate is not or only partially removed.
  • the housing may also be designed such that a plurality of semiconductor chips can be fastened in a housing.
  • the reflector layer 72 can also be dispensed with in the exemplary embodiments described. In this case, the radiation exiting from the side of the semiconductor chip 4 on the side surface 250 of the recess 25 in FIG

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

L'invention concerne un boîtier (1) pour un composant optoélectronique (10), le boîtier (1) présentant une surface de montage destinée au montage du boîtier, un premier conducteur de raccordement (31) un deuxième conducteur de raccordement (32) et un corps (2) de boîtier. Le corps (2) de boîtier présente une zone de liaison (21) et une zone de surface (22). La zone de liaison relie mécaniquement l'un à l'autre le premier conducteur de raccordement et le deuxième conducteur de raccordement. La zone de surface recouvre au moins en partie la zone de liaison sur le côté opposé à la surface de montage. La zone de liaison et la zone de surface sont différentes l'une de l'autre en ce qui concerne le matériau. L'invention concerne également un procédé de fabrication d'un boîtier (1).
PCT/EP2011/071720 2010-12-15 2011-12-05 Boîtier et procédé de fabrication d'un boîtier pour un composant optoélectronique WO2012080014A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020137015924A KR101526087B1 (ko) 2010-12-15 2011-12-05 광전 소자용 하우징 및 그 하우징의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010054591.0A DE102010054591B4 (de) 2010-12-15 2010-12-15 Gehäuse und Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Bauelement
DE102010054591.0 2010-12-15

Publications (1)

Publication Number Publication Date
WO2012080014A1 true WO2012080014A1 (fr) 2012-06-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/071720 WO2012080014A1 (fr) 2010-12-15 2011-12-05 Boîtier et procédé de fabrication d'un boîtier pour un composant optoélectronique

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Country Link
KR (1) KR101526087B1 (fr)
DE (1) DE102010054591B4 (fr)
TW (1) TWI491076B (fr)
WO (1) WO2012080014A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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DE102010054591A1 (de) 2012-06-21
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DE102010054591B4 (de) 2023-03-30
TW201238090A (en) 2012-09-16

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