WO2021122112A1 - Procédé de production de composants à semi-conducteurs, et composant à semi-conducteurs - Google Patents

Procédé de production de composants à semi-conducteurs, et composant à semi-conducteurs Download PDF

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Publication number
WO2021122112A1
WO2021122112A1 PCT/EP2020/084928 EP2020084928W WO2021122112A1 WO 2021122112 A1 WO2021122112 A1 WO 2021122112A1 EP 2020084928 W EP2020084928 W EP 2020084928W WO 2021122112 A1 WO2021122112 A1 WO 2021122112A1
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WO
WIPO (PCT)
Prior art keywords
thickness
area
lead frame
component
assembly
Prior art date
Application number
PCT/EP2020/084928
Other languages
German (de)
English (en)
Inventor
Matthias HIEN
Matthias Goldbach
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2021122112A1 publication Critical patent/WO2021122112A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present application relates to a method for producing semiconductor components and a semiconductor component.
  • the manufacture of semiconductor components can take place, for example, on the basis of leadframe technologies.
  • material removed from the leadframe during the separation into semiconductor components can impair the functionality of the semiconductor component being produced.
  • One task is to produce high-quality semiconductor components simply and reliably.
  • the semiconductor components are, for example, optoelectronic semiconductor components with at least one semiconductor chip, the one active one provided for generating and / or for receiving radiation Area.
  • the semiconductor chip, in particular the active area contains a III-V compound semiconductor material.
  • III-V compound semiconductor materials are used to generate radiation in the ultraviolet (Al x In y Gai- xy N) over the visible (Al x In y Gai- xy N, in particular for blue to green radiation, or Al x In y Gai- xy P, especially for yellow to red radiation) into the infrared (Al x In y Gai- xy As) spectral range is particularly suitable.
  • the method comprises a step in which a leadframe assembly with a plurality of component areas is provided.
  • the leadframe assembly extends in the vertical direction between a first main surface and a second main surface lying opposite the first main surface.
  • the components are arranged next to one another, for example in the form of a matrix.
  • the individual component areas of the leadframe assembly are in particular connected to one another.
  • the leadframe assembly is continuous and connected across the component areas.
  • the lead frame assembly is a structured metal sheet.
  • the leadframe assembly has a first thickness and in places a second thickness in places, the second thickness being smaller than the first thickness.
  • the vertical extent of the leadframe assembly is understood here as the thickness.
  • the lead frame assembly thus has areas in which the thickness of the lead frame assembly is reduced compared to the original thickness of the starting material, for example by etching.
  • each component area has a mounting area for the attachment of at least one semiconductor chip.
  • each component area can have one or more contacting areas spaced apart from the assembly area.
  • the method comprises a step in which in each case at least one semiconductor chip is fastened on one of the component areas, in particular on the mounting area of the component area.
  • the semiconductor chip is attached to the leadframe assembly with a connection layer, for example by means of an in particular electrically conductive adhesive or a solder.
  • the semiconductor chip is preferably also connected in an electrically conductive manner to the leadframe assembly.
  • the method comprises a step in which the lead frame assembly is reshaped with a molding compound to form a molded body assembly.
  • the molded body composite is formed, for example, by means of a casting process.
  • a casting process is generally understood to mean a process with which a molding compound can be designed according to a predetermined shape and, if necessary, cured.
  • the term "casting process" includes
  • Casting (molding), film assisted molding (film assisted molding), injection molding (injection molding), transfer molding and compression molding.
  • the molding compound is designed in particular in such a way that the composite molded body extends continuously over a plurality of component areas, in particular over all component areas.
  • the semiconductor chips are expediently already attached to the leadframe assembly, so that the molding compound is also molded onto the semiconductor chips.
  • a front side of the semiconductor chip facing away from the leadframe assembly preferably remains free of the molding compound.
  • a material can thus also be used for the molding compound which is impermeable to the radiation to be generated and / or received by the semiconductor chip.
  • the molding compound contains, for example, a polymer material, such as an epoxy or a silicone.
  • the molding compound can be filled with fillers in order to control the properties of the composite molding, for example the optical properties.
  • the composite molded body is designed to be reflective, for example with a reflectivity for the radiation to be received and / or generated of at least 60%, at least 80% or at least 90%.
  • a high reflectivity can be achieved by adding TiO2 particles.
  • the molding compound can also be designed to be specifically absorbent for the radiation to be generated and / or received, so that at least 50% of the incident radiation is absorbed in the spectral range that is relevant for the semiconductor chip.
  • carbon black particles can be added to the molding compound.
  • the molding compound can also be transparent for the radiation to be generated and / or received.
  • the method comprises a step in which material of the leadframe assembly is removed in some areas. This step takes place in particular after the semiconductor chips have been attached to the leadframe assembly and also after the leadframe assembly has been reshaped.
  • the material of the lead frame assembly is removed chemically, for example by etching.
  • the material of the lead frame assembly is partially removed from the second main surface of the lead frame assembly. Areas of the leadframe assembly that are not to be processed can be protected in this step, for example, by a masking layer.
  • the method comprises a step in which separation into the plurality of semiconductor components takes place along separation lines between adjacent component regions.
  • a semiconductor component thus emerges from each component area, which part of the molded body composite as a molded body with a part of the Has lead frame composite as a lead frame.
  • the side surfaces delimiting the semiconductor component being created in the lateral direction therefore arise only during the separation.
  • the side surfaces of the semiconductor component can have traces characteristic of the singulation method, for example traces of a mechanical singulation method, for example sawing, scoring and / or breaking.
  • coherent radiation for example laser radiation, can also be used for the separation.
  • a leadframe assembly is provided with a plurality of component regions, the leadframe assembly having a first thickness in places and a second thickness in places which is smaller than the first thickness. At least one semiconductor chip is attached to each of the component areas.
  • the lead frame assembly is reshaped with a molding compound to form a molded body assembly. Material of the leadframe assembly is removed in regions and the leadframe assembly is separated into the plurality of semiconductor components along separation lines between adjacent component regions.
  • the method is preferably carried out in the order in which the production steps are listed above.
  • the leadframe assembly is processed after the semiconductor chips are already arranged on the lead frame assembly and the lead frame assembly is reshaped with the molding compound.
  • the molded body composite ensures mechanical stability across the component areas, so that material of the leadframe composite can also be removed in such a way that the leadframe composite itself is no longer coherent even before the leadframe composite is separated.
  • the material of the leadframe assembly that is severed during the isolation can be reduced or even completely removed along the isolation lines. This simplifies the subsequent separation. Furthermore, the separation process can be carried out in an accelerated manner.
  • material of the leadframe assembly when material of the leadframe assembly is removed in regions, at least in places, material of the leadframe assembly is removed along the separation lines.
  • the material can be completely removed along the separation lines, so that when the lead frame assembly is separated, the lead frame assembly no longer has to be severed.
  • a coating of the leadframe assembly is formed.
  • the coating serves, for example, to increase the corrosion resistance and / or to improve the solderability of the semiconductor components.
  • the coating comprises, for example, one or more metal layers.
  • the coating is applied by electroplating, for example.
  • the coating can be formed in such a way that all exposed parts of the lead frame of a semiconductor component being produced have the coating.
  • the component areas of the leadframe assembly are separated from one another when material of the leadframe assembly is removed in areas.
  • the individual component areas of the leadframe assembly are therefore no longer connected to one another directly, but only via the molded body assembly in a mechanically stable manner.
  • the material of the lead frame assembly can be completely removed along the separation lines, so that no more material of the lead frame assembly has to be severed during separation.
  • the lead frame assembly provided has a grid-shaped area.
  • the grid-shaped area for example, runs around the component areas along the separation lines in a frame-like manner.
  • the lattice-shaped region of the leadframe assembly has the second thickness.
  • the lattice-shaped area can be completely removed when processing the leadframe assembly along the separation lines.
  • the reduced thickness of the lattice-shaped area makes it easier to remove the lattice-shaped area.
  • the assembly area and the contact area of the lead frame assembly provided are each connected to the lattice-shaped area via at least one connecting web.
  • the connecting webs thus establish a mechanical connection between the assembly areas and the contacting areas on the one hand and the lattice-shaped area on the other.
  • material from the leadframe assembly when material from the leadframe assembly is removed in areas, material of the connecting webs is removed in places to form a cavity.
  • the connecting webs have the second thickness.
  • the connecting webs are completely removed in the vertical direction when material of the leadframe assembly is removed in areas in the area of the cavity.
  • the cavity forms a trench which separates a connecting web into two partial webs running parallel to one another.
  • the cavity preferably has the coating of the leadframe assembly.
  • the cavity can be visible in a side view of the semiconductor component. This makes it possible to implement a control structure in a simple and reliable manner, with the aid of which, when the semiconductor component is mounted on a connection carrier, for example a circuit board, it can be checked by optical inspection whether a reliable solder connection has been made between the semiconductor component and the connection carrier.
  • a connection carrier for example a circuit board
  • the connecting webs have the first thickness and when material is removed in regions
  • the cavity is formed as a recess in the connecting webs. In this case, the cavity does not extend completely through the leadframe assembly in the vertical direction.
  • the semiconductor chip of a component area is in each case connected in an electrically conductive manner to at least one assigned contacting area, in particular after the leadframe assembly has been shaped with the molding compound.
  • the electrically conductive connection is formed on the molded body composite by means of a contact coating.
  • the contacting coating contains, for example, a metal and / or a transparent conductive oxide (TCO for short).
  • connection is also referred to as planar contact.
  • Wire bond connections can achieve particularly low component heights.
  • all semiconductor chips on the leadframe assembly can be electrically contacted at the same time.
  • the assembly area has the first thickness in a first partial area and the second thickness in a second partial area.
  • the semiconductor chip is expediently attached to the second partial area.
  • the first thickness is preferably equal to the sum of the second thickness, the thickness of the connecting layer and the thickness of the semiconductor chip, for example with a tolerance of at most 50 ⁇ m or at most 20 ⁇ m or at most 15 ⁇ m or at most 10 ⁇ m. This simplifies the production of the molded body composite. For example, the film used in a film-assisted casting process can compensate for height differences within the specified tolerance range.
  • a first region of the leadframe assembly with a third thickness forms the first main area and a second region of the leadframe assembly with the second thickness forms the second main area, the third thickness being smaller than the first thickness.
  • the starting material of the leadframe composite is therefore thinned from opposite directions for the formation of the first region and the second region.
  • the third thickness can be the same as the second thickness or differ from the second thickness.
  • the method there is a between the first region and the second region Transition area of the lead frame assembly arranged with the first thickness.
  • material of the leadframe assembly When material of the leadframe assembly is removed in areas, material of the leadframe assembly can be removed in the transition area and the transition area can be severed when it is separated. In this case, the material of the lead frame assembly is severed during the separation. Due to the design of the leadframe assembly with the transition area, however, there is no risk that the material of the leadframe assembly that is removed in the process causes damage to the semiconductor components being produced. Furthermore, by removing material from the leadframe assembly in areas in the transition area, a cavity can be formed. As already described above, this cavity can form a solder control structure.
  • a semiconductor component is also specified.
  • the semiconductor component is in particular a surface-mounted component (surface mounted device, smd for short).
  • the semiconductor component has a semiconductor chip and a leadframe, wherein the leadframe has a mounting area and a contacting area spaced apart from the mounting area.
  • the semiconductor chip is arranged on the mounting area and the lead frame and the semiconductor chip are embedded in a molded body.
  • the semiconductor chip is connected in an electrically conductive manner to the contacting area via a connecting line.
  • the molded body has a mounting side and a front side opposite the mounting side, the leadframe being completely different in places Mounting side extends to the front.
  • the mounting area and the contacting area each form externally accessible contact areas of the semiconductor component on the rear side of the molded body.
  • the lead frame forms at least one cavity which is visible in a side view of the semiconductor component.
  • the cavity starts in particular from the mounting side of the semiconductor component.
  • the semiconductor chip, the molded body and the lead frame can terminate flush, for example with a tolerance of at most 50 ⁇ m or at most 20 ⁇ m.
  • the molded body has an indentation which extends in plan view of the semiconductor component along the entire circumference of the semiconductor component.
  • the cavity is visible in a side view of the semiconductor component in the region of the indentation.
  • the leadframe is spaced from an outer border of the molded body at every point in a plan view of the semiconductor component.
  • the outer border defines the maximum lateral extent of the molded body and thus of the semiconductor component.
  • the lead frame can in particular have a coating at every point that is accessible from the outside, for example to protect against corrosion.
  • the method described above is particularly suitable for producing the semiconductor component. Features described in connection with the method can therefore also be used for the semiconductor component and vice versa.
  • the method is particularly suitable for the production of optoelectronic semiconductor components, in particular for the cost-effective production of optoelectronic semiconductor components, for example light-emitting diodes, LEDs for short, which are intended to provide a comparatively high level of brightness.
  • Semiconductor components can be produced which are characterized by a particularly high level of robustness, in particular with regard to corrosion resistance.
  • the semiconductor components are also particularly suitable for outdoor applications, for example for use in vehicles, for example motor vehicles.
  • the quality of the soldered connection can be reliably checked from the side of the semiconductor component by optical inspection.
  • the separation process can be accelerated considerably, in particular if the lead frame assembly no longer has to be severed during separation.
  • the semiconductor component can be produced in such a way that all exposed parts of the lead frame have the coating. This can cause corrosion of copper can be excluded without an extra protective layer having to be provided on the semiconductor component for this purpose.
  • connection line on the front side of the semiconductor component can also have the coating. Because the front side of the semiconductor component does not have to be protected separately, the semiconductor component is also particularly suitable for applications in which an optical element, for example a glass fiber, has to be brought close to the semiconductor chip.
  • Separation method increased, so that in particular another separation method than sawing can be used, such as scoring and / or breaking.
  • the production costs can also be reduced when separating by means of sawing, since the sawing can be carried out at a significantly increased speed, if not the risk of damage to the
  • Semiconductor components consists of the removed copper.
  • FIGS. 1A to IN show an exemplary embodiment of a method for producing semiconductor components on the basis of intermediate steps shown schematically in a sectional view
  • FIGS. 1A, IC, IE, 1H and 1L each show a plan view
  • FIGS. 1B, ID, 1F and II each show an associated sectional view along the line AA '
  • FIGS. IG, 1J and IM each show a rear view
  • FIGS. 1K and IN each show a sectional view along the line BB'
  • FIGS. 2A to 2D show a further exemplary embodiment of a method for producing semiconductor components on the basis of intermediate steps shown schematically in a sectional view
  • FIG. 2A being a plan view
  • FIG. 2B an associated sectional view along line AA '
  • FIGS. 3A to 3D show a further exemplary embodiment of a method for producing semiconductor components on the basis of intermediate steps shown schematically in sectional view, FIGS. 3A to 3C each showing a sectional view and FIG. 3D showing a sectional view perpendicular thereto along the line CC '; and FIGS. 4A to 4C show an exemplary embodiment for a semiconductor component in a schematic top view (FIG. 4A), in a schematic rear view (FIG. 4B) and in a schematic side view (FIG. 4C).
  • FIG. 1A shows a partial area of a leadframe assembly 3 which has eight component areas 35. A semiconductor component 1 emerges from each component area during manufacture.
  • the leadframe assembly 3 extends in the vertical direction between a first main surface 31 and a second main surface 32.
  • the lead frame assembly 3 also has a grid-shaped area 39.
  • Each component area 35 is located within a cell of the lattice-shaped area 39 and is thus surrounded by the latticed area 39 in the form of a frame.
  • a component area 35 each has a mounting area 351 and a contacting surface 352.
  • the mounting area 351 and the contacting area 352 are each connected to the lattice-shaped area 39 via at least one, in the exemplary embodiment shown, via two connecting webs 37.
  • a component area 35 can also have a plurality of assembly areas 351 and / or a plurality of contact-making areas 352.
  • the lead frame assembly 3 thus extends continuously over all component areas 35.
  • the contacting area 352 and the mounting area 351 of a component area are not directly connected to one another, but rather only via the connecting webs 37 and the lattice-shaped area 39.
  • the leadframe assembly 3 is formed, for example, by a structured sheet metal, for example a copper sheet.
  • the structuring takes place, for example, by punching.
  • the leadframe assembly 3 is structured in the vertical direction, so that the leadframe assembly 3 has a first thickness d1 in places and a second thickness d2 in places, which is smaller than the first thickness d1.
  • the starting material of the leadframe assembly 3 can be thinned in places, for example etched.
  • the thinning in places takes place from the first main surface 31 of the leadframe assembly 3.
  • the first main surface 31 is formed only by the areas of the lead frame assembly which have the first thickness dl.
  • the second main surface 32 of the lead frame assembly 3 is flat.
  • the mounting area 351 has a first partial area 3511 with the first thickness d1 and a second partial area 3512 with the second thickness d2.
  • the contacting area 352 likewise has a first partial area 3521 of the first thickness d1 and a second partial area 3522 of the second thickness d2.
  • the connecting webs 37 and the lattice-shaped area 39 each have the second thickness d2.
  • a semiconductor chip 2 is attached to the leadframe assembly 3 on the assembly areas 351 of the leadframe assembly, for example by means of a connecting layer 6, for example an electrically conductive adhesive layer or a solder.
  • the first thickness dl and the second thickness d2 of the leadframe assembly 3 are preferably matched to one another such that the first thickness dl does not differ from the sum of the second thickness d2, the thickness of the connecting layer 6 and the thickness of the semiconductor chip 2, or only slightly, for example by at most 50 gm or at most 20 gm or by at most 10 pm, differ from one another.
  • the front sides 20 of the semiconductor chips 2 and the first main surface 31 of the leadframe assembly 3 are therefore flush or differ only slightly from one another in relation to the distance from the second main surface 32 of the leadframe assembly 3.
  • a molded body composite 40 is formed.
  • a molding compound can be applied by means of a casting process. The molding compound is molded onto the leadframe assembly 3 and the semiconductor chips 2, so that the molded body assembly directly adjoins the leadframe assembly 3 and the semiconductor chips 2.
  • the molded body assembly 4 extends continuously over the leadframe assembly 3 and thus connects the component areas 35 to one another in a mechanically stable manner independently of the leadframe assembly 3.
  • the molded body composite 4 is formed in such a way that the finished molded body composite 4 has the front sides 20 of the semiconductor chips 2, the first main surface 31 of the leadframe composite and the second main surface 32 of the Leadframe composite 3 not covered.
  • the areas of the first thickness dl on the first main surface are free of the composite molded body.
  • a film-assisted casting process is particularly suitable for this, so that the front sides 20 of the semiconductor chips and the main surfaces of the leadframe assembly remain free as soon as the molded body assembly 4 is formed. These areas therefore do not have to be exposed after the composite molded body has been formed. In principle, however, this is possible, for example by means of a mechanical or chemical process.
  • the exposed areas of the lead frame assembly 3 with the second thickness d2 are completely covered when the molded body assembly 4 is formed.
  • the semiconductor chips 2 of a component region 35 can be connected in an electrically conductive manner to the associated contact-making region 352.
  • a connecting line 5 a single-layer or multi-layer contacting coating can be applied to the molded body composite 4, so that the connecting line adjoins the contacting region 352 on the first main surface 31.
  • the semiconductor chips 2 are electrically connected on their front side 20 by means of a planar contact.
  • material of the leadframe assembly 3 is removed in places from the second main surface 32, for example by etching.
  • the lead frame assembly is completely removed in the vertical direction at the points where the material is removed.
  • the grid-shaped area 39 is removed here.
  • Contacting areas 352 are protected from material removal at least in places, for example by a mask layer.
  • the component areas 35 of the leadframe assembly 3 are thus only mechanically connected to one another via the molded body assembly 4.
  • the leadframe assembly 3 itself no longer extends over the component areas 35.
  • the etched areas 7, in which material of the leadframe assembly 3 is removed, are shown hatched in FIG. 1J.
  • the connecting webs 37 are subdivided by means of the cavity 36 into partial webs that are separate from one another and run parallel to one another.
  • a coating 38 is applied, for example by galvanic deposition. This can be done in particular in such a way that all exposed metallic surfaces are coated. Masking is therefore not necessary.
  • This coating 38 covers the connecting line 5.
  • the Leadframe assembly 30 has the coating 38.
  • the coating 38 is only applied after the lead frame assembly 30 has been removed in places, so that the surfaces resulting from the material removal can also be protected, for example the surfaces of the cavities 36.
  • the molded body assembly 4 is separated between adjacent component areas 35 along separation lines 9. There is no longer any material of the leadframe assembly 3 along these separation lines 9, so that no metallic material of the leadframe assembly 3 has to be severed during separation. In the case of singulation by sawing, the sawing can thus be carried out at a significantly increased speed without there being the risk of damage to the existing semiconductor components due to material abrasion from the leadframe assembly 3 that occurs during sawing.
  • the molded body 40 of the semiconductor component 1 that was created from the molded body assembly 4 during the separation has a Indentation 41 on. This indentation extends in particular along the entire circumference of the semiconductor component 1 created during the singulation.
  • the molded body 40 forms the housing body of the semiconductor component 1 and extends in the vertical direction between a mounting side 45 and a front side 46 opposite the mounting side.
  • the semiconductor component On the mounting side 45, the semiconductor component has contact surfaces for external electrical contacting. These are not shown in FIG. IN for better illustration.
  • the indentation 41 is located on the rear side 45 of the molded body 40.
  • the side surfaces 15 of the semiconductor component 1 arise during the singulation. These side surfaces are formed by the molded body 40. The side surfaces can therefore have traces characteristic of the singulation process, for example saw traces.
  • a cavity 36 is visible on at least one of the side surfaces 15.
  • the cavity 36 is therefore suitable as a solder control structure which is visible in a side view of the semiconductor component 1.
  • At least one cavity 26 can also be visible on two or more, in particular on all side surfaces of the semiconductor component 1.
  • the exemplary embodiment for a method shown in FIGS. 2A to 2D essentially corresponds to the exemplary embodiment described in connection with FIGS. 1A to IN.
  • the connecting webs 37 of the lead frame assembly 3 provided have the first thickness d1.
  • the grid-shaped region of the leadframe assembly 3 can again be removed, as described in connection with FIG. 1J.
  • a cavity 36 in the form of a recess is formed in the connection points 37 in the connection webs 37.
  • the connecting webs 37 extend in the vertical direction completely through the resulting molded body 40 of the separated semiconductor component 1.
  • the material from the leadframe assembly 3 is removed in the vertical direction in particular such that the lattice-shaped area is completely removed in the vertical direction and the connecting webs 37 are not completely removed in the vertical direction, so that the cavities 36 are created in the connecting webs 37.
  • the connecting webs 37 thus have a U-shaped basic shape.
  • the connecting webs 37 with the cavity 36 in turn form a solder control structure.
  • the exemplary embodiment for a method shown in FIGS. 3A to 3D corresponds essentially to the exemplary embodiment described in connection with FIGS. 1A to IN.
  • the leadframe assembly 3 is structured from the first main surface 31 and the second main surface 32 in the vertical direction.
  • a first region 331 with a third thickness d3 in places forms the first main surface 31 of the leadframe assembly 3.
  • a second region 332 with the second thickness d2 in places forms the second main surface 32 of the leadframe assembly 3.
  • the third thickness d3 is smaller than the first thickness d1 and can in particular be equal to the second thickness d2.
  • the structuring can take place from the first main surface 31 and the second main surface 32 in a common manufacturing step.
  • the second thickness d2 and the third thickness d3 can also be different from one another.
  • the transition region 34 runs along the separation lines 9. After the formed body assembly 4 has been formed, material of the lead frame assembly 3 is again removed in places. As a result, cavities 36 are formed in the leadframe assembly 3 along the separation lines 9.
  • these cavities 36 are visible on the side surface 15 of the semiconductor component 1 being created and can thus serve as solder control structures.
  • the leadframe assembly 3 is not completely removed along the separation lines 9 before separation. When singulating, the lead frame assembly 3 is also severed. Due to the geometric configuration of the leadframe assembly 3 with the transition region 34, however, there is no risk that metal removed from the leadframe assembly 3 during sawing will damage the semiconductor components 1 that are produced.
  • a semiconductor component 1 is shown by way of example as it can be produced using a method in accordance with the exemplary embodiment described in FIGS. 1A to IN.
  • the semiconductor component 1 has a semiconductor chip 2, for example an LED semiconductor chip. Furthermore, the semiconductor component 1 has a leadframe 30 with a mounting area 351 and a contacting area 352 spaced apart from the mounting area. The semiconductor chip 2 is arranged on the mounting area 351 and is fastened to the mounting area 351 with a connecting layer 6, for example. The lead frame 30 and the semiconductor chip 2 are embedded in a molded body 4. The semiconductor chip 2 is connected in an electrically conductive manner to the contacting region 352 via a connecting line 5 via a planar contacting.
  • the molded body 40 has a mounting side 45 and a front side 46 opposite the mounting side.
  • the lead frame 30 extends completely from the mounting side 45 to the front side 46 in places Mounting area 351 and the contacting area 352 each form externally accessible contact areas 8 of the semiconductor component on the rear side of the molded body 40.
  • all of the contact areas required for making electrical contact with the semiconductor component 1 are accessible on the mounting side of the molded body, so that the semiconductor component 1 is a surface-mountable component.
  • the lead frame 30 forms at least one cavity 36, which is visible in a side view of the semiconductor component 1.
  • the cavity 36 starts from the assembly side 45.
  • the leadframe 30 is spaced apart from an outer border 49 of the molded body 40 at each point.
  • the front side 20 of the semiconductor chip is exposed on the front side of the molded body 46, so that the radiation to be generated and / or received by the semiconductor chip 2 during operation does not have to pass through the molded body 40.
  • the molded body 40 can be designed to be transparent, reflective or specifically absorbent for the radiation to be received and / or generated.
  • a material that can be processed by a casting method for example a polymer material such as a silicone or an epoxy, is suitable for the molded body 40.
  • the side surfaces 15 of the semiconductor component 1 arise during production during the separation, so that the side surfaces 15 can have tracks 91, which is shown in an enlarged illustration 91 in FIG. 4B.
  • All metallic areas of the semiconductor component 1 that are accessible on the outer surface of the semiconductor component 1 have a coating 38, in particular the connecting line 5 and the lead frame 30, in particular also in the area of the cavity 36.
  • the cavity 36 thus has the same properties like the electrical contacting surfaces 8, so that during the assembly of the semiconductor component 1 it can be seen from the course of the solder in the region of the cavity 36 whether a reliable soldered connection has been made between the semiconductor component 1 and a connection carrier, for example a printed circuit board.
  • the molded body 40 has a rectangular basic shape with an indentation 41 on the mounting side 45.
  • the indentation 41 runs along the entire circumference of the semiconductor component 1 (see FIG. 4B).
  • the cavity 36 of the semiconductor component 1 is visible in the area of the indentation 41.
  • the cavity 36 as described in connection with FIGS. 2A to 2D, can also be designed as a depression.
  • the lead frame 30 can also be designed as described in connection with FIGS. 3A to 3D.
  • the molded body 40 does not have a circumferential indentation 41 and the lead frame 30 extends up to the side surface 15 of the semiconductor component 1, in particular in places up to the outer border 49 of the molded body 40.

Abstract

L'invention concerne un procédé de production d'une pluralité de composants à semi-conducteurs (1), ledit procédé comprenant les étapes consistant : a) à fournir un assemblage de grille de connexion (3) présentant une pluralité de zones de composants (35), l'assemblage de grille de connexion (3) présentant, à certains endroits, une première épaisseur (d1) et, à certains endroits, une seconde épaisseur (d2) qui est inférieure à la première épaisseur (d1) ; b) à monter au moins une puce semi-conductrice (2) sur chacune des zones de composants (35) ; c) à former l'assemblage de grille de connexion (3) à l'aide d'un matériau de moulage de façon à former un composite de corps moulé (4) ; d) à éliminer, dans certaines zones, le matériau de l'assemblage de grille de connexion ; e) à séparer la pluralité de composants à semi-conducteurs (1) le long de lignes de séparation (9) entre des zones de composants adjacentes (3). L'invention concerne également un composant à semi-conducteurs (1).
PCT/EP2020/084928 2019-12-19 2020-12-07 Procédé de production de composants à semi-conducteurs, et composant à semi-conducteurs WO2021122112A1 (fr)

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DE102019220215.2 2019-12-19
DE102019220215.2A DE102019220215A1 (de) 2019-12-19 2019-12-19 Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement

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DE102022123579A1 (de) 2022-09-15 2024-03-21 Ams-Osram International Gmbh Gehäuse, leiterrahmenverbund und herstellungsverfahren

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060035414A1 (en) * 2004-08-11 2006-02-16 Park Hyungjun Process and lead frame for making leadless semiconductor packages
WO2009036604A1 (fr) * 2007-09-20 2009-03-26 Asat Limited Isolement de boîtiers lpcc/qfn par gravure de bande
US20150001698A1 (en) * 2013-06-28 2015-01-01 Stmicroelectronics, Inc. Leadless packages and method of manufacturing same
DE102014103034A1 (de) * 2014-03-07 2015-09-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
WO2016071440A1 (fr) * 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Composant optoélectronique, procédé de fabrication d'un composant optoélectronique
US20170316997A1 (en) * 2016-05-02 2017-11-02 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
US20190148270A1 (en) * 2017-09-09 2019-05-16 Amkor Technology, Inc. Method of forming a packaged semiconductor device having enhanced wettable flank and structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120152B2 (en) * 2008-03-14 2012-02-21 Advanced Semiconductor Engineering, Inc. Advanced quad flat no lead chip package having marking and corner lead features and manufacturing methods thereof
US8304277B2 (en) * 2010-09-09 2012-11-06 Stats Chippac, Ltd. Semiconductor device and method of forming base substrate with cavities formed through etch-resistant conductive layer for bump locking
CN105845816A (zh) * 2010-11-02 2016-08-10 大日本印刷株式会社 附有树脂引线框及半导体装置
DE102014102184A1 (de) * 2014-02-20 2015-08-20 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
DE102014119390A1 (de) * 2014-12-22 2016-06-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102015109953A1 (de) * 2015-06-22 2016-12-22 Osram Opto Semiconductors Gmbh Herstellung elektronischer Bauelemente

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060035414A1 (en) * 2004-08-11 2006-02-16 Park Hyungjun Process and lead frame for making leadless semiconductor packages
WO2009036604A1 (fr) * 2007-09-20 2009-03-26 Asat Limited Isolement de boîtiers lpcc/qfn par gravure de bande
US20150001698A1 (en) * 2013-06-28 2015-01-01 Stmicroelectronics, Inc. Leadless packages and method of manufacturing same
DE102014103034A1 (de) * 2014-03-07 2015-09-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
WO2016071440A1 (fr) * 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Composant optoélectronique, procédé de fabrication d'un composant optoélectronique
US20170316997A1 (en) * 2016-05-02 2017-11-02 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
US20190148270A1 (en) * 2017-09-09 2019-05-16 Amkor Technology, Inc. Method of forming a packaged semiconductor device having enhanced wettable flank and structure

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