WO2012067428A3 - 3족 질화물 반도체 발광소자 - Google Patents

3족 질화물 반도체 발광소자 Download PDF

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Publication number
WO2012067428A3
WO2012067428A3 PCT/KR2011/008762 KR2011008762W WO2012067428A3 WO 2012067428 A3 WO2012067428 A3 WO 2012067428A3 KR 2011008762 W KR2011008762 W KR 2011008762W WO 2012067428 A3 WO2012067428 A3 WO 2012067428A3
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WO
WIPO (PCT)
Prior art keywords
emitting device
iii nitride
semiconductor light
nitride semiconductor
group
Prior art date
Application number
PCT/KR2011/008762
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English (en)
French (fr)
Other versions
WO2012067428A2 (ko
Inventor
이태희
김현석
안현수
노민수
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Publication of WO2012067428A2 publication Critical patent/WO2012067428A2/ko
Publication of WO2012067428A3 publication Critical patent/WO2012067428A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

개시되는 3족 질화물 반도체 발광소자는, p형 전도성을 가지는 p형 반도체층; 상기 p형 반도체층에 전기적으로 접속되는 p측 본딩 패드; n형 전도성을 가지는 n형 반도체층; 및 상기 n형 반도체층에 전기적으로 접속되는 n측 전극;을 포함하며, 상기 p측 본딩 패드와 상기 n측 전극 중 적어도 하나는, 최하면으로서 Al과 Ag를 포함하는 반사층을 가지는 것을 특징으로 한다.
PCT/KR2011/008762 2010-11-16 2011-11-16 3족 질화물 반도체 발광소자 WO2012067428A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100113913A KR20120052656A (ko) 2010-11-16 2010-11-16 3족 질화물 반도체 발광소자
KR10-2010-0113913 2010-11-16

Publications (2)

Publication Number Publication Date
WO2012067428A2 WO2012067428A2 (ko) 2012-05-24
WO2012067428A3 true WO2012067428A3 (ko) 2012-08-23

Family

ID=46084517

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/008762 WO2012067428A2 (ko) 2010-11-16 2011-11-16 3족 질화물 반도체 발광소자

Country Status (2)

Country Link
KR (1) KR20120052656A (ko)
WO (1) WO2012067428A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101534304B1 (ko) * 2013-11-15 2015-07-07 한국광기술원 3족 질화물 반도체 발광소자
WO2023081756A1 (en) 2021-11-03 2023-05-11 The J. David Gladstone Institutes, A Testamentary Trust Established Under The Will Of J. David Gladstone Precise genome editing using retrons
WO2023141602A2 (en) 2022-01-21 2023-07-27 Renagade Therapeutics Management Inc. Engineered retrons and methods of use
WO2024044723A1 (en) 2022-08-25 2024-02-29 Renagade Therapeutics Management Inc. Engineered retrons and methods of use

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102678A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化ガリウム系化合物半導体素子
JP2004349301A (ja) * 2003-05-20 2004-12-09 Sharp Corp 発光ダイオード素子の電極及び発光ダイオード素子
KR20060035464A (ko) * 2004-10-22 2006-04-26 에피스타 코포레이션 전극 아래에 형성된 반사층을 갖는 발광 디바이스
KR100635157B1 (ko) * 2005-09-09 2006-10-17 삼성전기주식회사 질화물계 반도체 발광소자
JP2010141262A (ja) * 2008-12-15 2010-06-24 Showa Denko Kk 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102678A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化ガリウム系化合物半導体素子
JP2004349301A (ja) * 2003-05-20 2004-12-09 Sharp Corp 発光ダイオード素子の電極及び発光ダイオード素子
KR20060035464A (ko) * 2004-10-22 2006-04-26 에피스타 코포레이션 전극 아래에 형성된 반사층을 갖는 발광 디바이스
KR100635157B1 (ko) * 2005-09-09 2006-10-17 삼성전기주식회사 질화물계 반도체 발광소자
JP2010141262A (ja) * 2008-12-15 2010-06-24 Showa Denko Kk 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法

Also Published As

Publication number Publication date
KR20120052656A (ko) 2012-05-24
WO2012067428A2 (ko) 2012-05-24

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