WO2012057276A1 - Module électroluminescent et équipement d'éclairage - Google Patents

Module électroluminescent et équipement d'éclairage Download PDF

Info

Publication number
WO2012057276A1
WO2012057276A1 PCT/JP2011/074838 JP2011074838W WO2012057276A1 WO 2012057276 A1 WO2012057276 A1 WO 2012057276A1 JP 2011074838 W JP2011074838 W JP 2011074838W WO 2012057276 A1 WO2012057276 A1 WO 2012057276A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
light
layer
reflective layer
emitting module
Prior art date
Application number
PCT/JP2011/074838
Other languages
English (en)
Japanese (ja)
Inventor
友広 三瓶
絵梨果 竹中
Original Assignee
東芝ライテック株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝ライテック株式会社 filed Critical 東芝ライテック株式会社
Priority to JP2012540936A priority Critical patent/JP5447686B2/ja
Priority to CN2011900006972U priority patent/CN203300702U/zh
Publication of WO2012057276A1 publication Critical patent/WO2012057276A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands

Definitions

  • Embodiments of the present invention relate to a light emitting module in which a plurality of light emitting elements are mounted side by side on a substrate, and a lighting fixture incorporating the light emitting module.
  • light emitting modules in which a plurality of light emitting elements (for example, LEDs; light emitting diodes) are arranged and mounted on a substrate have been developed, and lighting fixtures incorporating this type of light emitting module are becoming popular.
  • LEDs for example, LEDs; light emitting diodes
  • the light emitting module includes, for example, a substrate having an insulating layer on the surface, a metal reflective layer partially stacked on the surface of the substrate (ie, the surface of the insulating layer), and a plurality of LED chips mounted on the reflective layer. And a translucent sealing member in which the reflective layer and the plurality of LED chips are sealed on the substrate surface.
  • the insulating layer on the substrate surface is formed by reacting an epoxy resin with a curing agent.
  • One reflective layer is provided for each LED chip, or one reflective layer is provided for the entire mounting area of the LED chips, and a silver plating layer is provided on the surface.
  • the plurality of LEDs are blue LEDs that emit blue light.
  • the sealing member is formed by mixing a phosphor that emits yellow light which is excited by blue light and has a complementary color relationship with a silicone resin having gas permeability.
  • the surface of the reflective layer becomes black over time, and the light reflectance decreases over time. Such a phenomenon continues until no gas is released from the insulating layer.
  • the light emitting module according to the embodiment is formed by laminating a metal reflective layer on a substrate including a polyimide layer and mounting a light emitting element on the reflective layer via a eutectic solder.
  • FIG. 1 is an external perspective view showing an LED lamp according to an embodiment.
  • FIG. 2 is a cross-sectional view of the LED lamp of FIG. 1 cut along an axis.
  • FIG. 3 is a plan view of the light emitting module incorporated in the LED lamp of FIG. 1 as viewed from the light extraction side. 4 is a plan view showing a module substrate of the light emitting module of FIG.
  • FIG. 5 is a cross-sectional view of the light emitting module of FIG. 3 taken along line F5-F5.
  • FIG. 6 is a partially enlarged cross-sectional view of a main part of a light emitting module according to another embodiment.
  • FIG. 1 the external view of the LED lamp 100 is shown as an example of the lighting fixture incorporating the light emitting module which concerns on embodiment.
  • FIG. 2 is a sectional view of the LED lamp 100 of FIG. 1 cut along the axis.
  • the LED lamp 100 includes a main body 102, an insulating member 111, a base 115, a lighting device 121, the light emitting module 1, and a lighting cover 161.
  • the LED lamp 100 is attached, for example, in such a manner that the illumination cover 161 faces downward by screwing a base 115 into a socket (not shown) attached to the ceiling. That is, in FIGS. 1 and 2, the LED lamp 100 is illustrated in a state where the mounting state is reversed upside down.
  • the main body 102 is made of aluminum having a relatively high thermal conductivity.
  • a module fixing base 103 for attaching the light emitting module 1 is provided at the upper end of the main body 102 in the figure.
  • an annular cover mounting convex portion 104 is integrally projected from the upper end of the main body around the module fixing base 103.
  • a concave portion 105 that is recessed upward in the drawing is provided on the lower end side of the main body 102 in the drawing.
  • a through hole 106 extending in the axial direction is formed inside the main body 102. The upper end of the through hole 106 shown in the figure opens at the upper end surface of the main body 102, and the lower end of the through hole 106 shown in the figure opens at the bottom of the recess 105.
  • a groove portion 106 a formed so as to bend laterally along the back surface of the module fixing base 103 is provided continuously to the upper end of the through hole 6.
  • the main body 102 integrally has a plurality of heat radiating fins 107 on its outer periphery. As shown in FIG. 1, the plurality of radiating fins 107 are curved and extended so as to spread outward toward the upper end of the main body 102. The plurality of heat radiation fins 107 are provided to radiate heat generated from the light emitting module 1 to the outside of the LED lamp 100.
  • the insulating member 111 is formed in a bottomed cylindrical shape as shown in a cross section in FIG.
  • the insulating member 111 integrally has an annular insulating convex portion 112 that protrudes from the outer peripheral surface at an intermediate portion in the height direction.
  • the insulating member 111 is accommodated and disposed in the recess 105 so that the bottom wall 111 a contacts the bottom surface of the recess 105 and the insulating protrusion 112 is engaged with the edge of the opening of the recess 105. That is, the outer surface of the insulating member 111 is in close contact with the inner surface of the recess 105.
  • the lower portion of the insulating member 111 in the drawing protrudes from the lower end of the main body 102 in the drawing from the lower end of the drawing. In other words, only the upper portion of the insulating member 111 in the drawing from the insulating convex portion 112 is inserted into the concave portion 105 of the main body 102. Further, the bottom wall 111 a of the insulating member 111 is provided with a through hole 114 for communicating the illustrated lower end of the through hole 6 with the inside of the insulating member 111.
  • the base 115 has a structure in which a base body 117 and an eyelet terminal 118 are attached to a substantially disc-shaped base 116 formed of an insulating material.
  • the base 115 of the present embodiment is an E26 type base.
  • the base 115 is attached so as to cover the above-described lower portion of the insulating member 111 so that the base 116 closes the opening of the insulating member 111.
  • the base body 117 is formed with a spiral groove that is screwed into a power source socket (not shown).
  • the lighting device 121 is accommodated and disposed inside the insulating member 111 as shown in FIG.
  • the lighting device 121 is formed by mounting a circuit component 123 such as a transformer, a capacitor, and a transistor on a circuit board 122.
  • the lighting device 121 is electrically connected to the base 115.
  • the connecting member 124 for that purpose is illustrated in FIG.
  • the connection member 124 electrically connects the eyelet terminal 118 and the circuit board 122.
  • the lighting device 121 is electrically connected to the light emitting module 1 to be described later via an insulating coated electric wire (not shown) that passes through the through hole 6 (groove 106a).
  • the lighting device 121 supplies direct current to the light emitting module 1 via the base 115.
  • the illumination cover 161 is formed in a substantially hemispherical shape as shown in FIG.
  • the illumination cover 161 is made of a translucent synthetic resin. As shown in FIG. 2, the illumination cover 161 is fitted and attached to a cover mounting convex portion 104 protruding from the upper end in the figure of the main body 102 so as to cover the light emitting side of the light emitting module 1. That is, the light emitted from the light emitting module 1 is used as illumination light through the illumination cover 161.
  • the cover mounting convex portion 104 on the main body 102 side has L-shaped mounting grooves (not shown) at a plurality of locations along the circumferential direction.
  • a plurality of locking projections are provided at positions corresponding to the plurality of mounting grooves of the cover mounting projection 104, respectively.
  • the illumination cover 161 is attached to the main body 102 by hooking its locking projections to the respective mounting grooves of the cover mounting projections 104. As shown in FIGS. 1 and 2, a blindfold ring 162 is provided at the edge of the illumination cover 161 to conceal the mounting groove and the locking projection described above.
  • FIG. 3 shows a plan view of the light emitting module 1 viewed from the light extraction side (hereinafter referred to as the front side), and
  • FIG. 4 shows a plan view of the module substrate 3 of the light emitting module 1.
  • FIG. 5 shows a sectional view of the light emitting module 1 taken along line F5-F5 in FIG.
  • the light emitting module 1 has a COB (chip on board) type structure.
  • the light emitting module 1 of the present embodiment includes a module substrate 5 (FIG. 4) having a metal reflective layer 11, a positive-side power supply conductor 12, and a negative-electrode side power supply conductor 13 on the surface, and a surface of the reflective layer 11.
  • An end bonding wire 24 for supplying power to the element 21, a frame member 25 surrounding the sealing region, and a sealing member 28 filled in the sealing hole 25 a of the frame member 25 are included.
  • the module substrate 5 is formed, for example, in a substantially rectangular shape as shown in FIG.
  • the module substrate 5 preferably has, for example, a metal base substrate in order to improve the heat dissipation of each light emitting element 21.
  • the module substrate 5 of the present embodiment has a structure in which an insulating layer 7 thinner than the base plate 6 is laminated on the surface of a metal base plate 6.
  • the base plate 6 is made of, for example, aluminum or an aluminum alloy.
  • the insulating layer 7 is made of electrically insulating polyimide.
  • this polyimide insulating layer 7 does not contain a phenolic resin or an amine resin as contained in an epoxy resin curing agent, it is decomposed and gasified even when light from the light emitting element 21 is incident. There are almost no ingredients.
  • the polyimide insulating layer 7 is also excellent in heat resistance (500 ° C. or higher).
  • the insulating layer 7 forms the mounting surface of the module substrate 5.
  • the module substrate 5 for example, a polyimide substrate made of a single layer of polyimide, a metal base substrate in which a polyimide layer is laminated on a metal plate other than aluminum, and the like can be used.
  • the surface layer of the module substrate 5 forming the mounting surface of the light emitting element 21 may be formed of polyimide.
  • the module substrate 5 is fixed in close contact with the surface 103a of the module fixing base 103 described above. For this reason, the module substrate 5 has four cutout portions 5 a for attaching to the module fixing base 103. That is, the module substrate 5 is attached in close contact with the main body 102 by passing four screws (not shown) through the four notches 5a and screwing them into screw holes (not shown) of the module fixing base 103.
  • the module fixing base 103 is made of metal, and is fixed in close contact with the upper surface of the main body 102 as described above. For this reason, when the plurality of light emitting elements 21 of the light emitting module 1 are turned on and the light emitting module 1 generates heat, this heat is transmitted to the main body 102 via the module fixing base 103.
  • the reflection layer 11 and the power supply conductors 12 and 13 are both patterned on the surface of the insulating layer 7 of the module substrate 5.
  • the reflective layer 11 occupies the central portion of the insulating layer 7 and is provided in a square shape, and the feed conductors 12 and 13 are reflected in the vicinity of the reflective layer 11 so as to sandwich the reflective layer 11, for example.
  • the layers 11 are disposed on both sides in the longitudinal direction. In other words, an elongated gap in which the surface of the insulating layer 7 is exposed is formed between the reflective layer 11 and the power supply conductors 12 and 13 on both sides thereof.
  • the power supply conductors 12 and 13 are provided on both sides of the power supply conductors 12 and 13 so as to sandwich them. Further, when there are a plurality of reflective layers 11, they are provided on both sides of the reflective layer group so as to sandwich the reflective layer group. That is, the reflective layer 11 may be provided separately for each light emitting element 21.
  • the reflective layer 11 and the power feeding conductors 12 and 13 preferably have a metal surface layer portion having a higher reflectance than the insulating layer 7.
  • the power supply conductors 12 and 13 can be formed simultaneously with the reflective layer 11, and the power supply conductors 12 and 13 can also reflect light in the same manner as the reflective layer 11.
  • the occupied area of the part that is, the reflective layer 11 and the power supply conductors 12 and 13
  • the luminous flux maintenance factor can be further increased.
  • the two power supply terminals 14 and 15 are also patterned on the surface of the insulating layer 7.
  • One power supply terminal 14 is connected to the positive-side power supply conductor 12 via a conductive member (not shown), and the other power supply terminal 15 is connected to the negative-side power supply conductor 13 via a conductive member (not shown).
  • the electric power feeding terminals 14 and 15 are connected to the circuit board 122 of the lighting device 121 via the insulation coating electric wire which is not illustrated.
  • the insulation-coated electric wire (not shown) connecting the light emitting module 1 and the lighting device 121 extends from the power supply terminals 14 and 15 of the light emitting module 1, passes through the through-hole 106 through the groove 106 a, and is a circuit board of the lighting device 121. 122.
  • the reflection layer 11, the power supply conductors 12 and 13, and the power supply terminals 14 and 15 are formed at the same time.
  • the reflection layer 11, the power supply conductors 12 and 13, and the power supply terminals 14 and 15 provided on the surface of the insulating layer 7 are all formed in a three-layer structure of a base layer A, an intermediate layer B, and a surface layer C.
  • the base layer A is provided by bonding and bonding Cu (copper) to the entire surface of the insulating layer 7 of the module substrate 5 and then removing unnecessary portions by etching.
  • the intermediate layer B is provided by plating Ni (nickel) on the surface of the base layer A.
  • the surface layer C is provided by electroless plating Ag (silver) on the surface of the intermediate layer B.
  • the manufacturing process of the light emitting module 1 can be simplified and the manufacturing cost can be reduced.
  • the surface layer C is formed by electrolytic plating, it is necessary to provide plating leads on the surface layer C of the reflective layer 11, the surface layer C of the power supply conductors 12 and 13, and the surface layer C of the power supply terminals 14 and 15, respectively. For this reason, the plating pattern becomes complicated, and a process for removing the leads after plating is required, which complicates the process. In electroless plating, such a plating lead is unnecessary.
  • the surface layer C is made of Ag, the light reflectivity of the reflective layer 11 and the feed conductors 12 and 13 is higher than the light reflectivity of the insulating layer 7.
  • the total light reflectance of the surface layer C formed of silver is, for example, 90.0%.
  • Examples of the material of the surface layer C having a higher light reflectance than the insulating layer 7 include gold, nickel, aluminum, and the like in addition to Ag.
  • the reflective layer 11 is not limited to the three-layer structure described above, and may be formed of a single layer of metal having a higher light reflectance than the insulating layer 7.
  • At least the surface roughness Ra of the reflective layer 11 among the reflective layer 11, the power supply conductors 12 and 13, and the power supply terminals 14 and 15 is 0.2 or less.
  • surface irregularities can be reduced, and the surface area of the reflective layer 11 exposed to the organic gas described later can be reduced.
  • the phenomenon in which the surface of the reflective layer 11 becomes black can be suppressed, and a decrease in reflectance can be suppressed.
  • the plurality of light emitting elements 21 are aligned on the surface of the reflective layer 11.
  • the light emitting element 21 of the present embodiment is an LED (light emitting diode) bare chip.
  • a nitride compound semiconductor for example, a gallium nitride compound semiconductor
  • a semiconductor substrate such as sapphire
  • this bare chip is a single-sided electrode type chip having two element electrodes 21a on the upper surface thereof as shown in FIG.
  • the size of each element electrode 21a of the light emitting element 21 formed in this way is 0.5 mm in length and 0.25 mm in width.
  • the light emitting element 21 including an LED emitting blue light is used for each light emitting element 21, for example, in order to cause white light to be emitted from the light emitting unit.
  • the light emitting element 21 emits light by passing a forward current through the pn junction portion of the semiconductor. That is, the light emitting element 21 directly converts electric energy into light. Therefore, the light emitting element 21 has an energy saving effect as compared with an incandescent bulb that incandescents the filament to a high temperature by energization and emits visible light by the thermal radiation.
  • each of the light emitting elements 21 is bonded and fixed to the surface layer C of the reflective layer 11 using the eutectic solder 22.
  • the eutectic solder 22 is typically an Au-based solder, but for example, Au (gold) -Sn (tin) -based eutectic solder may be used.
  • the eutectic temperature of the Au—Sn eutectic solder 22 is about 320 ° C.
  • These light emitting elements 21 are mounted on the module substrate 5 so as to be aligned vertically and horizontally as shown in FIG. That is, the first to third light emitting element rows are formed by the plurality of light emitting elements 21 arranged so as to extend in the longitudinal direction of the reflective layer 11.
  • each light emitting element row element electrodes of different polarities of two light emitting elements 21 adjacent to each other in the extending direction, that is, the element electrode 21a on the positive side of one light emitting element 21 and the other light emitting element.
  • the element electrode 21a on the negative electrode side 21 is connected by a bonding wire 23 made of a fine wire made of Au.
  • the plurality (four) of the light emitting elements 21 included in each light emitting element array are electrically connected in series. For this reason, these one row of light emitting elements 21 emit light all at once in an energized state.
  • the end bonding wires 24 for connecting the light emitting elements 21 at both ends of each row to the power supply conductors 12 and 13 are also Au thin metal wires, so that heat is hardly transmitted. For this reason, the heat of the light emitting elements 21 at both ends of each row travels along the end bonding wires 24 and moves (escapes) to the power supply conductors 12 and 13. Thereby, temperature distribution in each part of the reflective layer 11 can be made uniform, and the temperature difference of the several light emitting element 21 mounted in the reflective layer 11 can be suppressed.
  • the light emitting elements 21 in each row are connected in parallel to the power supply conductors 12 and 13 via the end bonding wires 24, respectively. Therefore, even if any one of the first to third light emitting element rows cannot emit light due to bonding failure or the like, the light emitting module 1 as a whole cannot emit light. .
  • the frame member 25 is formed of, for example, a synthetic resin in a rectangular frame shape, and is bonded and fixed to the surface of the module substrate 5.
  • the frame member 25 has a rectangular sealing hole 25 a having a size surrounding all the light emitting elements 21.
  • the sealing hole 25a surrounds the entirety of the reflective layer 11 and part of the feed conductors 12 and 13. That is, the sealing hole 25a defines the size of a sealing region that fills a sealing member 28 described later.
  • the sealing hole 25a has a size surrounding all the light emitting elements 21, all the bonding wires 23, and all the end bonding wires 24.
  • the thickness of the frame member 25, that is, the depth of the sealing hole 25 a is set to a value at which all of the constituent elements 21, 23 and 24 can be embedded by the sealing member 28.
  • the size of the sealing region filled with the sealing member 28 corresponds to the opening area of the sealing hole 25a (hereinafter, this area is referred to as a sealing area).
  • resist layers 26 and 26 covering the surface of the module substrate 5 are respectively provided at positions where the reflective layer 11 is sandwiched vertically in the figure.
  • Each of the resist layers 26 has holes for exposing, for example, the above-described power supply terminals 14 and 15 to the outside.
  • the sealing member 28 is filled in the sealing hole 25 a to fill the reflective layer 11, the power supply conductors 12 and 13, the plurality of light emitting elements 21, the plurality of bonding wires 23, and the plurality of end bonding wires 24. .
  • the sealing member 28 is made of a light-transmitting synthetic resin having gas permeability, for example, a transparent silicone resin. A predetermined amount of the sealing member 28 is injected into the sealing hole 25a in an uncured state, and then heat-cured.
  • An appropriate amount of phosphor (not shown) is mixed in the sealing member 28.
  • the phosphor is excited by light emitted from the light emitting element 21 and emits light having a color different from the color of light emitted from the light emitting element 21.
  • the light emitting element 21 is an LED chip that emits blue light
  • the phosphor emits yellow light having a complementary color relationship with the blue light so that the light emitting module 1 can emit white light.
  • a radiating yellow phosphor is used.
  • the sealing member 28 mixed with the phosphor in this manner emits light from the phosphor, so that the entire sealing member 28 filling the sealing hole 25 a functions as the light emitting portion of the light emitting module 1.
  • the sealing member 28 When the light emitting module 1 having the above structure is incorporated in the LED lamp 100 and energized through the lighting device 121, the plurality of light emitting elements 21 covered with the sealing member 28 emit blue light all at once, and the sealing member 28 The mixed yellow phosphor is excited to emit yellow light. That is, the sealing member 28 functions as a planar light source that emits white light in which blue light and yellow light are mixed.
  • the reflective layer 11 functions as a heat spreader that diffuses the heat generated by the plurality of light emitting elements 21 and also functions as a reflecting mirror that reflects the light emitted from each light emitting element 21 toward the module substrate 5.
  • the power supply conductors 12 and 13 in the sealing region also function as a heat spreader and a reflecting mirror, similarly to the reflective layer 11.
  • the heat from each light emitting element 21 is radiated to the outside of the LED lamp 100 through the reflective layer 11, the module substrate 5, the module fixing base 103, the upper surface of the main body 102, and the heat radiation fins 107.
  • the light reflected by the reflective layer 11 and the light diffused by the sealing member 28 and reflected by the power supply conductors 12, 13, together with the main light directly emitted from the sealing member 28, are connected to the illumination cover 161. And used as illumination light.
  • the reflective layer 11 and the power supply conductors 12 and 13 are provided in an area covering almost the entire surface of the sealing region 25 a (sealing area).
  • the reflectance of light can be increased, and the light emission efficiency of the light emitting module 1 can be increased.
  • the part where the surface of the insulating layer 7 where the reflective layer 11 and the power supply conductors 12 and 13 are not exposed has a lower light reflectance than the metal layers 11, 12 and 13.
  • a part of the light emitted from the light emitting element 21 is incident on the portion where the insulating layer 7 is exposed. Since the light emitting element 21 of the present embodiment is an LED chip that emits blue light, the blue light is mainly incident on the portion where the insulating layer 7 is exposed.
  • the insulating layer 7 of the module substrate 5 is formed of an epoxy resin as in the prior art, the phenolic resin contained in the curing agent is decomposed and gasified by blue light.
  • the insulating layer 7 of this embodiment is formed of polyimide, even when blue light is incident, there is almost no organic gas generated by photolysis.
  • the organic gas generated from the insulating layer 7 passes through the sealing member 28 and hardly reacts with the silver on the surface layer C of the reflective layer 11 and the power feeding conductors 12 and 13. There is no worry that the surfaces of the layers 11, 12, and 13 become black over time. Therefore, according to this embodiment, the light emitting module 1 which can maintain sufficient light emission intensity over a long period of time can be provided.
  • the insulating layer 7 made of polyimide is an organic material having excellent heat resistance, a plurality of light emitting elements 21 can be connected to the reflective layer 11 using the eutectic solder 22.
  • the polyimide insulating layer 7 has a heat resistant temperature exceeding 500 ° C. as described above.
  • the eutectic temperature of the eutectic solder 22 is about 320 ° C. For this reason, even if the light emitting element 21 is mounted on the module substrate 5 using the eutectic solder 22, the characteristics of the insulating layer 7 do not change.
  • the heat generated from the light emitting elements 21 can be satisfactorily transmitted to the module substrate 5, and the heat dissipation of the light emitting elements 21 is improved. Can do. Thereby, the light output of the light emitting module 1 can be increased, and the high output light emitting module 1 can be provided.
  • FIG. 6 shows a partially enlarged cross-sectional view of the structure of the main part of the light emitting module 30 according to the second embodiment.
  • the light emitting module 30 is obtained by flip-chip mounting an element electrode 34 of an LED chip 32 (light emitting element) on a wiring layer 11 ′.
  • the wiring layer 11 ′ is obtained by patterning the reflective layer 11 and functions as a wiring for supplying power to the LED chip 32.
  • the semiconductor light emitting layer 36 of the LED chip 32 is positioned on the module substrate 5 (insulating layer 7) side, and the light emitted from the semiconductor light emitting layer 36 is reflected on the upper surface (here, the element electrode 34). (The surface opposite to the formed surface) and also from the side surface.
  • the light emitting module 30 of the second embodiment has substantially the same structure as the light emitting module 1 of the first embodiment described above. Therefore, here, the same reference numerals are given to components that function in the same manner as the light emitting module 1 of the first embodiment, and a detailed description thereof will be omitted.
  • a plurality of LED chips 32 are mounted on the module substrate 5 using the eutectic solder 22.
  • the module substrate 5 on which the eutectic solder 22 is applied and the chip is placed is placed in a furnace (not shown) and heated to the eutectic temperature. Thereby, the eutectic solder 22 is melted and the element electrode 34 is bonded to the wiring layer 11 ′.
  • the eutectic solder 22 is obtained by using the module substrate 5 having the polyimide layer 7 on the surface. Accordingly, the LED chip 32 can be flip-chip mounted, the thermal conductivity of the LED chip 32 to the module substrate 5 can be further increased, and the mounting reliability can be increased.
  • SYMBOLS 1 Light emitting module, 5 ... Module board

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

Un module électroluminescent selon un mode de réalisation de l'invention est formé par dépôt d'une couche réfléchissante de métal sur un substrat contenant une couche de polyimide, et par montage d'un élément électroluminescent sur la couche réfléchissante au moyen d'un métal d'apport eutectique.
PCT/JP2011/074838 2010-10-29 2011-10-27 Module électroluminescent et équipement d'éclairage WO2012057276A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012540936A JP5447686B2 (ja) 2010-10-29 2011-10-27 発光モジュール、および照明器具
CN2011900006972U CN203300702U (zh) 2010-10-29 2011-10-27 发光模块以及照明设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010244199 2010-10-29
JP2010-244199 2010-10-29

Publications (1)

Publication Number Publication Date
WO2012057276A1 true WO2012057276A1 (fr) 2012-05-03

Family

ID=45993979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/074838 WO2012057276A1 (fr) 2010-10-29 2011-10-27 Module électroluminescent et équipement d'éclairage

Country Status (4)

Country Link
JP (1) JP5447686B2 (fr)
CN (1) CN203300702U (fr)
TW (1) TWI445465B (fr)
WO (1) WO2012057276A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014225541A (ja) * 2013-05-16 2014-12-04 スタンレー電気株式会社 半導体発光装置
JP2015072749A (ja) * 2013-10-01 2015-04-16 三菱電機株式会社 発光ユニット、照明ランプ及び照明装置並びに発光ユニットの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014010354A1 (fr) * 2012-07-09 2014-01-16 シャープ株式会社 Dispositif électroluminescent, dispositif d'éclairage et substrat isolant
CN103956426B (zh) * 2014-05-16 2017-05-03 深圳清华大学研究院 半导体发光芯片及发光装置
TWI684293B (zh) * 2018-06-29 2020-02-01 同泰電子科技股份有限公司 高反射背光電路板結構及其製作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003304003A (ja) * 2002-04-08 2003-10-24 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
JP2005175387A (ja) * 2003-12-15 2005-06-30 Citizen Electronics Co Ltd 光半導体パッケージ
JP2005209852A (ja) * 2004-01-22 2005-08-04 Nichia Chem Ind Ltd 発光デバイス
JP2005277380A (ja) * 2004-02-23 2005-10-06 Stanley Electric Co Ltd Ｌｅｄ及びその製造方法
JP2007305621A (ja) * 2006-05-08 2007-11-22 New Paradigm Technology Inc 発光構造物
JP2007329370A (ja) * 2006-06-09 2007-12-20 C I Kasei Co Ltd 発光装置および発光装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003304003A (ja) * 2002-04-08 2003-10-24 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
JP2005175387A (ja) * 2003-12-15 2005-06-30 Citizen Electronics Co Ltd 光半導体パッケージ
JP2005209852A (ja) * 2004-01-22 2005-08-04 Nichia Chem Ind Ltd 発光デバイス
JP2005277380A (ja) * 2004-02-23 2005-10-06 Stanley Electric Co Ltd Ｌｅｄ及びその製造方法
JP2007305621A (ja) * 2006-05-08 2007-11-22 New Paradigm Technology Inc 発光構造物
JP2007329370A (ja) * 2006-06-09 2007-12-20 C I Kasei Co Ltd 発光装置および発光装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014225541A (ja) * 2013-05-16 2014-12-04 スタンレー電気株式会社 半導体発光装置
JP2015072749A (ja) * 2013-10-01 2015-04-16 三菱電機株式会社 発光ユニット、照明ランプ及び照明装置並びに発光ユニットの製造方法

Also Published As

Publication number Publication date
TWI445465B (zh) 2014-07-11
CN203300702U (zh) 2013-11-20
JPWO2012057276A1 (ja) 2014-05-12
TW201233261A (en) 2012-08-01
JP5447686B2 (ja) 2014-03-19

Similar Documents

Publication Publication Date Title
JP5499325B2 (ja) 発光モジュールおよび照明装置
JP5846408B2 (ja) 発光装置および照明装置
JP5029893B2 (ja) 電球形ｌｅｄランプおよび照明装置
WO2012057038A1 (fr) Module électroluminescent et équipement d'éclairage
JP2013529370A (ja) Ｌｅｄ光モジュール
JP2010170945A (ja) 電球形照明装置
JP2011192703A (ja) 発光装置及び照明装置
WO2011024861A1 (fr) Dispositif émetteur de lumière et dispositif d'éclairage
JP5447686B2 (ja) 発光モジュール、および照明器具
JP5376404B2 (ja) 発光装置
JP5870258B2 (ja) 電球形ランプ及び照明装置
JP2014082481A (ja) 発光装置
JP2011134934A (ja) 発光モジュールおよび照明装置
JP2011060960A (ja) 発光モジュール
JP5420124B1 (ja) 電球形ランプ、照明装置及び電球形ランプの製造方法
WO2014030276A1 (fr) Lampe à ampoule et dispositif d'éclairage
JP5417556B1 (ja) 電球形ランプ及び照明装置
JP5493058B1 (ja) 電球形ランプ及び照明装置
JP6252732B2 (ja) 照明用光源及び照明装置
JP5234363B2 (ja) 発光装置及び照明装置
JP2010287749A (ja) 発光体および照明器具
JP5433818B1 (ja) 電球形ランプ及び照明装置
WO2015151918A1 (fr) Module à diodes électroluminescentes
JP2011210762A (ja) 電気部品実装基板及び電気機器

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201190000697.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11836409

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2012540936

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11836409

Country of ref document: EP

Kind code of ref document: A1