WO2012046599A1 - Dispositif émetteur de lumière, appareil d'affichage et équipement électronique - Google Patents

Dispositif émetteur de lumière, appareil d'affichage et équipement électronique Download PDF

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Publication number
WO2012046599A1
WO2012046599A1 PCT/JP2011/072149 JP2011072149W WO2012046599A1 WO 2012046599 A1 WO2012046599 A1 WO 2012046599A1 JP 2011072149 W JP2011072149 W JP 2011072149W WO 2012046599 A1 WO2012046599 A1 WO 2012046599A1
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layer
excitation light
substrate
light
organic
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PCT/JP2011/072149
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English (en)
Japanese (ja)
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悦昌 藤田
別所　久徳
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シャープ株式会社
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/22—Illumination; Arrangements for improving the visibility of characters on dials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
    • H04W52/02—Power saving arrangements
    • H04W52/0209—Power saving arrangements in terminal devices
    • H04W52/0261—Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level
    • H04W52/0267—Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level by controlling user interface components
    • H04W52/027—Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level by controlling user interface components by controlling a display operation or backlight unit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Definitions

  • the present invention relates to a light-emitting device, a display device, and an electronic apparatus that include a phosphor layer that emits fluorescence by excitation light.
  • an electroluminescence (EL) light-emitting element has high visibility because it is self-luminous. Moreover, since the EL light emitting device is a completely solid device, it has excellent impact resistance and is easy to handle. For this reason, the EL light emitting element is attracting attention as a light emitting element in various display devices.
  • the EL light emitting element includes an inorganic EL element using an inorganic compound as a light emitting material and an organic EL element using an organic compound as a light emitting material. Among these, organic EL elements have been actively researched for practical use since the applied voltage can be significantly reduced.
  • an organic EL device having a light emitting layer that emits blue to blue green light, and a green pixel that includes a phosphor layer that absorbs blue to blue green light emitted from the organic EL device as excitation light and emits green light
  • a method for realizing full-color display by combining a red pixel composed of a phosphor layer emitting red light and a blue pixel composed of a blue color filter for improving color purity has been proposed (for example, see Patent Document 1). ).
  • a conventional organic EL device has a configuration shown in FIG. 16, for example.
  • the conventional organic EL element for example, a reflective film 3, an excitation light source element 4, a sealing layer 5, an adhesive layer 6, a phosphor layer 7, and a sealing substrate 8 are sequentially laminated on a substrate 2.
  • the excitation light L 1 emitted from the excitation light source element 4 is reflected directly or reflected by the reflection film 3 and enters the phosphor layer 7 to excite the phosphor layer 7.
  • the fluorescence L2 emitted from the excited phosphor layer 7 is emitted to the outside through the sealing substrate 8 from the same direction as the direction in which the excitation light L1 is incident.
  • the organic EL element 1 having the above-described configuration is arranged in a unit of pixels emitting red, green, and blue, for example, thereby producing various colors typified by white, thereby achieving full color display. .
  • An aspect of the present invention has been made in view of such a conventional situation, and an object thereof is to provide a light-emitting device, a display device, and an electronic apparatus with high efficiency (high luminance).
  • the light-emitting device includes at least a substrate, an excitation light source element that emits excitation light, and a phosphor layer that emits fluorescence when excited by the excitation light, and the excitation light is applied to the phosphor layer.
  • the fluorescence is emitted to the outside in a direction opposite to the direction of incidence.
  • the excitation light source element may be formed between the substrate and the phosphor layer.
  • the substrate, the phosphor layer, and the excitation light source element may be sequentially formed.
  • the light-emitting device may further include a wavelength selective transmission / reflection film that reflects or absorbs the excitation light and transmits the fluorescence.
  • the wavelength selective transmission / reflection film may be formed of a dielectric multilayer film.
  • the excitation light source element may be a first electrode, an organic layer containing at least an organic light emitting material, and an organic EL element including a second electrode.
  • the light-emitting device further includes a reflective film that reflects at least a part of the excitation light and a part of the fluorescence, facing the wavelength selective transmission / reflection film with the excitation light source element interposed therebetween. May be.
  • the display device includes at least a substrate, an excitation light source element that emits excitation light, and a phosphor layer that emits fluorescence when excited by the excitation light, and the excitation light is directed toward the phosphor layer.
  • a light emitting device configured to emit the fluorescence to the outside in a direction opposite to the incident direction is provided.
  • the excitation light source element may be driven using an active drive element.
  • the active drive element may be formed on the substrate, and the fluorescence may be emitted from a side opposite to the substrate.
  • An electronic device includes at least a substrate, an excitation light source element that emits excitation light, and a phosphor layer that emits fluorescence when excited by the excitation light, and the excitation light is directed toward the phosphor layer.
  • a display device includes a light emitting device configured to emit the fluorescence to the outside in a direction opposite to the incident direction.
  • a highly efficient (high luminance) light emitting device, display device, and electronic device can be provided.
  • FIG. 1 is a schematic cross-sectional view showing an example of a light-emitting device according to the first embodiment of the present invention.
  • the light emitting device 10 includes a substrate 11, a wavelength selective transmission / reflection film (wavelength selection film) 12, an excitation light source element 13, a sealing layer 14, an adhesive layer 15, and a phosphor layer 16 that are sequentially stacked on one surface 11 a of the substrate 11. , And a sealing substrate 17. Further, the active drive element 18 is preferably formed on the one surface 11 a of the substrate 11.
  • the wavelength selective transmission / reflection film 12 reflects the excitation light (light in the wavelength band to be excitation light) L1 emitted from the excitation light source element 13, and is also excited by the excitation light and emitted from the phosphor layer 16 (fluorescence and fluorescence). It is a functional film that transmits light L2 in the wavelength band.
  • the excitation light source element 13 is an element that emits excitation light, and in this embodiment, for example, an organic EL element.
  • An organic EL element has an organic layer (organic EL layer) sandwiched between a first electrode and a second electrode. The organic layer emits excitation light by applying a voltage between the first electrode and the second electrode.
  • the phosphor layer 16 is excited by the excitation light L1 emitted from the excitation light source element 13 and emits fluorescence L2.
  • the phosphor layer 16 is a phosphor layer of three primary colors of a blue phosphor layer, a green phosphor layer, and a red phosphor layer. It should just be comprised from.
  • the sealing layer 14 and the adhesive layer 15 seal and bond the substrate 11 side on which the excitation light source element 13 is formed and the sealing substrate 17 on which the phosphor layer 16 is formed to each other.
  • the active drive element 18 is an element that drives the excitation light source element 13 and may be, for example, a TFT.
  • a metal substrate made of (Fe) or the like, or a substrate coated with an insulator made of silicon oxide (SiO 2 ), an organic insulating material or the like on the substrate, or a metal substrate made of Al or the like is anodized.
  • substrate etc. which performed the insulation process by the method are mentioned, this embodiment is not limited to these board
  • the plastic substrate or the metal substrate because it is possible to form a bent portion or a bent portion without stress.
  • a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are more preferable. This eliminates moisture permeation that can occur when an organic EL element is used as the excitation light source element 13 (organic EL is known to deteriorate even with a particularly low amount of moisture). Is possible.
  • the excitation light source element 13 is an organic EL element
  • leakage (short) due to protrusions of the metal substrate that can occur when the metal substrate is used as the organic EL substrate the film thickness of the organic EL is about 100 nm to 200 nm. Therefore, it is known that leakage (short-circuit) occurs in the current in the pixel portion due to the protrusion.
  • the active drive element 18 that drives the excitation light source element 13 is formed on a substrate, it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or less and does not cause distortion.
  • a substrate that does not melt at a temperature of 500 ° C. or less and does not cause distortion.
  • the linear expansion coefficient is 1 ⁇ 10 ⁇ 5 /
  • the active drive element 18 is formed on the glass substrate, and then transferred to the plastic substrate. An active drive element can be transferred and formed.
  • the fluorescence L2 emitted from the phosphor layer 16 is emitted from the sealing substrate 17 side facing the substrate 11, there is no restriction on the material related to the transparency of the substrate, but the fluorescence L2 emitted from the phosphor layer 17 is present.
  • the active drive element 18 for driving the excitation light source element 13 When the active drive element 18 for driving the excitation light source element 13 is formed on the substrate 11, the active drive element 18 is formed on the substrate 11 in advance before the excitation light source element 13 is formed, and functions as a switching and a drive. To do.
  • the active drive element 18 include known active drive elements.
  • TFT active drive element
  • amorphous silicon amorphous silicon
  • polycrystalline silicon polysilicon
  • microcrystalline silicon inorganic semiconductor materials such as cadmium selenide, zinc oxide, indium oxide-gallium oxide-
  • oxide semiconductor material such as zinc oxide
  • organic semiconductor material such as a polythiophene derivative, a thiophene oligomer, a poly (p-ferylene vinylene) derivative, naphthacene, or pentacene
  • TFT structure include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.
  • Examples of a method for forming an active layer constituting a TFT include the following methods. (1) Method of ion doping impurities into amorphous silicon formed by plasma induced chemical vapor deposition (PECVD) method, (2) Amorphous by low pressure chemical vapor deposition (LPCVD) method using silane (SiH 4 ) gas After forming silicon and crystallizing amorphous silicon by solid phase growth to obtain polysilicon, ion doping by ion implantation, (3) LPCVD using Si 2 H 6 gas or SiH 4 gas Amorphous silicon is formed by the PECVD method used, annealed by a laser such as an excimer laser, and the amorphous silicon is crystallized to obtain polysilicon, followed by ion doping (low temperature process), (4) LPCVD method or PECVD A polysilicon layer is formed by the method 10 A gate insulating film formed by thermal oxidation at 0 °C above, thereon, a gate electrode of the n + poly
  • a gate insulating film of a TFT active drive element
  • a known material can be used. Examples thereof include SiO 2 formed by PECVD, LPCVD, etc., or SiO 2 obtained by thermally oxidizing a polysilicon film.
  • the signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT used in this embodiment can be formed using a known material, for example, tantalum (Ta ), Aluminum (Al), copper (Cu), and the like.
  • the display device according to this embodiment can be formed with the above-described configuration, but is not limited to these materials, structures, and formation methods.
  • the interlayer insulating film can be formed using a known material, for example, silicon oxide (SiO 2 ), silicon nitride (SiN). Or an inorganic material such as Si 2 N 4 ) or tantalum oxide (TaO or Ta 2 O 5 ), or an organic material such as an acrylic resin or a resist material.
  • a known material for example, silicon oxide (SiO 2 ), silicon nitride (SiN).
  • an inorganic material such as Si 2 N 4 ) or tantalum oxide (TaO or Ta 2 O 5 ), or an organic material such as an acrylic resin or a resist material.
  • the formation method include dry processes such as chemical vapor deposition (CVD) and vacuum deposition, and wet processes such as spin coating. Moreover, it can also pattern by the photolithographic method etc. as needed.
  • the fluorescence L2 emitted from the phosphor layer 17 When the fluorescence L2 emitted from the phosphor layer 17 is taken out from the substrate 11 side, the fluorescence L2 from the phosphor layer 17 enters a TFT (active drive element) formed on the substrate 11 and changes in TFT characteristics.
  • a TFT active drive element
  • a light-shielding insulating film having light-shielding properties when taking out the fluorescence L2 from the phosphor layer 17 from the sealing substrate 17 side, for the purpose of preventing external light from entering the TFT formed on the substrate 11 and changing the TFT characteristics.
  • a light-shielding insulating film having light-shielding properties when taking out the fluorescence L2 from the phosphor layer 17 from the sealing substrate 17 side, for the purpose of preventing external light from entering the TFT formed on the substrate 11 and changing the TFT characteristics
  • Examples of the light-shielding interlayer insulating film include those obtained by dispersing pigments or dyes such as phthalocyanine and quinaclone in polymer resins such as polyimide, color resists, black matrix materials, and inorganic insulating materials such as Ni x Zn y Fe 2 O 4. Can be mentioned. However, this embodiment is not limited to these materials and forming methods.
  • the active drive element 18 for driving the excitation light source element 13 When the active drive element 18 for driving the excitation light source element 13 is formed on the substrate 11, irregularities are formed on the surface thereof, and this irregularity causes the excitation light source element 13, for example, an organic EL element, for example, a pixel electrode defect, organic EL There is a possibility that phenomena such as layer loss, disconnection of the counter electrode, short circuit between the pixel electrode and the counter electrode, and reduction in breakdown voltage may occur. In order to prevent these phenomena, a planarizing film may be provided on the interlayer insulating film.
  • planarizing film can be formed using a known material, and examples thereof include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material.
  • examples of the method for forming the planarizing film include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method.
  • the present embodiment is not limited to these materials and the forming method.
  • the planarization film may have a single layer structure or a multilayer structure.
  • the wavelength selective transmission / reflection film (wavelength selective transmission film) 12 is one that absorbs or reflects at least a part of the excitation light L1 and transmits a part of the fluorescence L2 emitted from the phosphor layer 16. That's fine.
  • a wavelength selective transmission / reflection film that reflects at least a part of the excitation light L1 and transmits a part of the fluorescence L2 from the phosphor layer 16 as the wavelength selective transmission / reflection film 12
  • the excitation light can be reflected and incident on the phosphor layer 16, and the excitation light L1 incident on the phosphor layer 16 can be increased. As a result, the luminous efficiency of the phosphor layer 16 is improved. It is possible to make it.
  • a color filter or the like can be used as the wavelength selective transmission / reflection film. It is not limited.
  • the color filter can be formed by a dry process or a wet process.
  • a pigment such as porphyrin, zinc porphyrin, phthalocyanine, or copper can be formed by vacuum deposition.
  • the pigment is dispersed in a transparent resin such as an acrylic resin, a polycarbonate resin, or a polystyrene resin, and the material composed of the pigment and the transparent resin is dissolved and dispersed in an organic solvent or the like. Etc. can be formed.
  • patterning can be performed by using a photosensitive transparent resin instead of the transparent resin.
  • a photosensitive resin one or more types of photosensitive resin (photo-curable resist material) having a reactive vinyl group such as acrylic acid resin, methacrylic acid resin, polyvinyl cinnamate resin, and hard rubber resin. It is possible to use a mixture of types.
  • examples of the wavelength selective transmission / reflection film include a metal thin film and a dielectric multilayer film. It is not limited to.
  • the dielectric multilayer film can be formed by alternately laminating thin films of two kinds of materials having different refractive indexes. TiO 2 , SiO 2 , ZnS, Ta 2 O 5 , MgF 2 , Al 2 O 3, etc. can be used as the high refraction and low refraction materials.
  • the dielectric multilayer film can be formed, for example, by placing it in a high vacuum deposition apparatus and alternately depositing a high refractive material and a low refractive material with a desired film thickness.
  • the film thickness is determined by the desired wavelength to be reflected and the wavelength to be absorbed, but reflects at least a part of the excitation light wavelength region and at least the wavelength region of the fluorescence L2 from the phosphor layer 16. It is necessary to transmit a part of (wavelength band). In other words, when blue excitation light is used and a green phosphor is emitted, the wavelength selective transmission / reflection film reflects the blue wavelength region and transmits the green wavelength region in the dielectric multilayer film. It is necessary to control the film thickness of the high refractive material and the low refractive material.
  • the long-wavelength selective transmission / reflection film 12 preferably has an absorptance or reflectance of 50% or more at the maximum wavelength of the excitation light. Moreover, it is preferable that the wavelength selection transmission reflection film 12 has a transmittance of 50% or more at the maximum light emission wavelength of the phosphor layer. More preferably, the wavelength selective transmission / reflection film 12 preferably has an absorptance or reflectance of 80% or more at the maximum wavelength of the excitation light. Moreover, it is preferable that the wavelength selection transmission reflection film 12 has a transmittance of 80% or more at the maximum wavelength of light emission from the phosphor layer.
  • the excitation light source element (light source for exciting the phosphor layer) 13 an element that emits ultraviolet light or blue light is preferable.
  • an element that emits ultraviolet light or blue light is preferable.
  • publicly known ultraviolet LED, blue LED, ultraviolet light emitting inorganic EL, blue light emitting inorganic EL, ultraviolet light emitting organic EL, blue light emitting organic EL, and the like can be mentioned, but this embodiment is not limited thereto.
  • the excitation light source element 13 when passing through the excitation light source element 13 before the fluorescence L2 from the phosphor layer 16 is extracted outside, the excitation light source element 13 should have a higher transmittance in the emission wavelength region of the phosphor layer 16. good.
  • the excitation light source element 13 preferably has a transmittance of 50% or more at the maximum wavelength of the fluorescence L2 of the phosphor layer 16. More preferably, it has a transmittance of 80% or more at the maximum wavelength of the fluorescence L2 from the phosphor layer 16. From this point, an organic EL element (ultraviolet light emitting organic EL, blue light emitting organic EL) is preferable as the excitation light source element 13.
  • an organic EL element ultraviolet light emitting organic EL, blue light emitting organic EL
  • the excitation light source element 13 can be manufactured with a well-known material and a well-known manufacturing method.
  • the ultraviolet light light having a main light emission peak of 360 to 410 nm is preferable. Blue light is preferably emitted with a main emission peak of 410 to 470 nm. Further, by directly switching these light sources, it is possible to control ON / OFF of light emission for displaying an image.
  • an LED When using an LED as the excitation light source element 13, a known LED can be used.
  • an ultraviolet light emitting inorganic LED, a blue light emitting inorganic LED, or the like can be used.
  • Such an LED is composed of, for example, a substrate, a buffer layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type contact layer, but is not limited thereto. Absent.
  • the active layer in the case of using an LED as the excitation light source element 13 is a layer that emits light by recombination of electrons and holes.
  • the active layer material a known active layer material for LED can be used.
  • an active layer material for example, as an ultraviolet active layer material, AlGaN, InAlN, In a Al b Ga 1-ab N (0 ⁇ a, 0 ⁇ b, a + b ⁇ 1), blue active layer material In z Ga 1 -z N (0 ⁇ z ⁇ 1) and the like can be mentioned, but this embodiment is not limited to these.
  • the active layer has a single quantum well structure or a multiple quantum well structure.
  • the active layer of the quantum well structure may be either n-type or p-type.
  • the active layer may be doped with donor impurities and / or acceptor impurities.
  • doping with donor impurities can further increase the emission intensity between bands as compared with non-doped ones.
  • the acceptor impurity is doped, the peak wavelength can be shifted to a lower energy side by about 0.5 eV than the peak wavelength of interband light emission, but the full width at half maximum is increased.
  • the light emission intensity can be further increased as compared with the light emission intensity of the active layer doped only with the acceptor impurity.
  • the conductivity type of the active layer is preferably doped with a donor impurity such as Si to be n-type.
  • n-type cladding layer As the n-type cladding layer, a known n-type cladding layer material for LED can be used, and it may be a single layer or a multilayer.
  • an n-type cladding layer By forming an n-type cladding layer with a material formed of an n-type semiconductor having a larger band gap energy than the active layer, a potential barrier against holes is created between the n-type cladding layer and the active layer, and the holes are activated. It becomes possible to confine in a layer.
  • it can be formed by n-type In x Ga 1-x N (0 ⁇ x ⁇ 1), but the present embodiment is not limited to these.
  • the p-type cladding layer As the p-type cladding layer, a known p-type cladding layer material for LED can be used, and it may be a single layer or a multilayer. By configuring the p-type cladding layer with a material formed of a p-type semiconductor having a larger band gap energy than the active layer, a potential barrier against electrons is formed between the p-type cladding layer and the active layer, and the electrons are in the active layer. It becomes possible to confine. For example, although it can be formed of Al y Ga 1-y N (0 ⁇ y ⁇ 1), the present embodiment is not limited to these.
  • a known contact layer material for LED can be used as the contact layer.
  • an n-type contact layer made of n-type GaN as a layer for forming an electrode in contact with the n-type cladding layer
  • p-type GaN as a layer for forming an electrode in contact with the p-type cladding layer.
  • this contact layer need not be formed if the second n-type cladding layer and the second p-type cladding layer are formed of GaN, and the second cladding layer may be used as a contact layer. Is possible.
  • the excitation light source element 13 For each of the above layers in the case where an LED is used as the excitation light source element 13, it is possible to use a known film forming process for LED, but this embodiment is not particularly limited thereto.
  • a vapor phase growth method such as MOVPE (metal organic vapor phase epitaxy), MBE (molecular beam vapor phase epitaxy), HDVPE (hydride vapor phase epitaxy), for example, sapphire (C plane, A plane, R ), SiC (including 6H—SiC, 4H—SiC), spinel (MgAl 2 O 4 , especially its (111) plane), ZnO, Si, GaAs, or other oxide single crystal substrates (such as NGO) ) Or the like.
  • MOVPE metal organic vapor phase epitaxy
  • MBE molecular beam vapor phase epitaxy
  • HDVPE hydrogen vapor phase epitaxy
  • sapphire C plane, A plane, R
  • SiC including 6H—SiC, 4H—
  • An inorganic EL element can be used as the excitation light source element 13.
  • an ultraviolet light emitting inorganic EL or a blue light emitting inorganic EL can be used.
  • the inorganic EL element includes, for example, a substrate, a first electrode, a first dielectric layer, a light emitting layer, a second dielectric layer, and a second electrode, but is not limited thereto.
  • Examples of the substrate in the case of using an inorganic EL element as the excitation light source element 13 include insulation of an inorganic material substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, etc., a ceramic substrate made of alumina, etc. Substrate, metal substrate made of aluminum (Al), iron (Fe), etc., or substrate coated with an insulator made of silicon oxide (SiO 2 ), organic insulating material, etc. on the substrate, Al, etc.
  • substrate etc. which performed the insulation process by the method of anodic oxidation etc. are mentioned for the surface of the metal substrate which consists of this embodiment, this embodiment is not limited to these board
  • the plastic substrate or the metal substrate because a bent portion and a bent portion can be formed without stress. Further, a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are more preferable.
  • the first electrode and the second electrode when an inorganic EL element is used as the excitation light source element 13 for example, a metal such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), and indium
  • the transparent electrode material include oxides (ITO) composed of (In) and tin (Sn), oxides (SnO 2 ) of tin (Sn), oxides (IZO) composed of indium (In) and zinc (Zn), and the like.
  • ITO oxides
  • a transparent electrode such as ITO is better in the light extraction direction.
  • a reflective film such as aluminum is preferably used on the side opposite to the light extraction direction.
  • the first electrode and the second electrode can be formed by using the above-mentioned materials by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method, etc. It is not limited to the forming method. If necessary, the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask.
  • the film thickness is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.
  • a known dielectric material for inorganic EL can be used as the excitation light source element 13 .
  • dielectric materials include tantalum pentoxide (Ta 2 O 5 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), aluminum titanate ( Examples include AlTiO 3 ) barium titanate (BaTiO 3 ) and strontium titanate (SrTiO 3 ), but this embodiment is not limited thereto.
  • first and second dielectric layers of the present embodiment may have one type selected from the above-mentioned dielectric materials or a structure in which two or more types of materials are laminated.
  • the film thickness of the dielectric is preferably about 200 nm to 500 nm.
  • a known light emitting material for inorganic EL can be used.
  • a light emitting material for example, ZnF 2 : Gd as an ultraviolet light emitting material, BaAl 2 S 4 : Eu, CaAl 2 S 4 : Eu, ZnAl 2 S 4 : Eu, Ba 2 as a blue light emitting material.
  • Examples include SiS 4 : Ce, ZnS: Tm, SrS: Ce, SrS: Cu, CaS: Pb, (Ba, Mg) Al 2 S 4 : Eu, but the present embodiment is not limited thereto.
  • the film thickness of the light emitting layer is preferably about 300 nm to 1000 nm.
  • an organic EL element is used as the excitation light source element 13.
  • a known organic EL element can be used as the organic EL element, for example, at least between the first electrode, the second electrode, the first electrode, and the second electrode.
  • the organic electroluminescent layer containing the organic layer which has the organic light emitting layer which consists of organic luminescent materials it is not limited to these.
  • the first electrode and the second electrode function as a pair as an anode or a cathode of the organic EL element. That is, when the first electrode is an anode, the second electrode is a cathode, and when the first electrode is a cathode, the second electrode is an anode.
  • Specific compounds and formation methods are exemplified below, but the present embodiment is not limited to these materials and formation methods.
  • a known electrode material can be used as an electrode material for forming the first electrode and the second electrode.
  • a metal such as gold (Au), platinum (Pt), nickel (Ni) having a work function of 4.5 eV or more, Oxides such as molybdenum oxide (Mo 2 O 3 ) and vanadium oxide (V 2 O 5 ), indium (In) and tin (Sn) oxide (ITO), tin (Sn) oxide (SnO 2 )
  • Examples thereof include transparent electrode materials such as oxide (IZO) made of indium (In) and zinc (Zn), and a stacked structure thereof.
  • an electrode material for forming the cathode lithium (Li), calcium (Ca), cerium (Ce), a work function of 4.5 eV or less from the viewpoint of more efficiently injecting electrons into the organic EL layer.
  • Examples include metal thin films such as barium (Ba) and aluminum (Al), thin film alloys such as Mg: Ag alloys and Li: Al alloys containing these metals, and laminated structures of the metal thin films and the transparent electrodes. It is done.
  • the first electrode and the second electrode can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above-described materials. Is not limited to these forming methods. If necessary, the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask.
  • the film thickness is preferably 50 nm or more because the transparent electrode material has higher resistance than the metal material.
  • the wiring resistance is increased, which may increase the drive voltage.
  • the metal material has a very low transmittance, so it is necessary to use a translucent electrode, and it is preferable to use a translucent electrode.
  • a metal semitransparent electrode alone or a combination of a metal translucent electrode and a transparent electrode material can be used as a material used here.
  • the film thickness of the semitransparent electrode is preferably 5 nm to 30 nm. When the film thickness is less than 5 nm, the resistance becomes high, the efficiency is lowered, the charge is not uniformly related, and problems such as uneven light emission occur. On the other hand, when the film thickness exceeds 30 nm, the light transmittance is drastically reduced, so that the luminance and efficiency may be lowered.
  • the organic EL layer may be a single layer structure of an organic light emitting layer or a multilayer structure of an organic light emitting layer and a charge transport layer. Specifically, the following configurations may be mentioned. However, the present embodiment is not limited to these.
  • the organic light emitting layer may be composed only of the organic light emitting material exemplified below, or may be composed of a combination of a light emitting dopant and a host material, and optionally, a hole transport material, an electron transport material, and an additive
  • An agent (donor, acceptor, etc.) or the like may be included, and these materials may be dispersed in a polymer material (binding resin) or an inorganic material. From the viewpoint of luminous efficiency and lifetime, a material in which a luminescent dopant is dispersed in a host material is preferable.
  • the organic light emitting material a known light emitting material for organic EL can be used. Such light-emitting materials are classified into low-molecular light-emitting materials, polymer light-emitting materials, and the like. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials.
  • the light-emitting material may be classified into a fluorescent material, a phosphorescent material, and the like, and it is preferable to use a phosphorescent material with high light emission efficiency from the viewpoint of reducing power consumption.
  • the light-emitting dopant optionally contained in the light-emitting layer a known dopant material for organic EL can be used.
  • a dopant material for example, as an ultraviolet light emitting material, p-quaterphenyl, 3,5,3,5 tetra-t-butylsecphenyl, 3,5,3,5 tetra-t-butyl-p -Fluorescent materials such as quinckphenyl.
  • Fluorescent light-emitting materials such as styryl derivatives, bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′, 6′-difluorophenyl) And phosphorescent organometallic complexes such as polydinato) tetrakis (1-pyrazolyl) borate iridium (III) (FIr6).
  • a known host material for organic EL can be used as a host material when using a dopant.
  • host materials include the low-molecular light-emitting materials, the polymer light-emitting materials, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene (CPF), 3 , 6-bis (triphenylsilyl) carbazole (mCP), carbazole derivatives such as (PCF), aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3- And fluorene derivatives such as bis (9-phenyl-9H-fluoren-9-yl) benzene (mDPFB) and 1,4-bis (9-phenyl-9H-fluoren-9-yl) benzene (pDPFB).
  • the charge injection / transport layer is used to more efficiently inject charges (holes, electrons) from the electrode and transport (injection) to the light emitting layer, and the charge injection layer (hole injection layer, electron injection layer). It is classified as a transport layer (hole transport layer, electron transport layer).
  • the charge injection layer and the charge transport layer may each be composed of only the charge injection / transport material exemplified below.
  • Each of the charge injection layer and the charge transport layer may optionally contain an additive (donor, acceptor, etc.) or the like in the charge injection / transport material exemplified below.
  • Each of the charge injection layer and the charge transport layer may have a structure in which these materials such as a charge injection transport material exemplified below are dispersed in a polymer material (binding resin) or an inorganic material.
  • charge injecting and transporting material known charge transporting materials for organic EL and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but this embodiment is not limited to these materials. .
  • the hole injection transport material examples include oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis (3-methylphenyl) ) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD) Compounds, low molecular weight materials such as hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (PANI-CSA), 3,4-polyethylenedioxythiophene / polystyrene sulfonate (PEDOT / PSS) ), Poly (triphenylamine) derivatives (Poly-TPD), polyvinylcarbazole (PVCz), Examples thereof include polymer materials such
  • the highest occupied molecular orbital (HOMO) is better than the hole injection transport material used for the hole transport layer. It is preferable to use a material having a low energy level, and as the hole transport layer, it is preferable to use a material having higher hole mobility than the hole injection transport material used for the hole injection layer.
  • the hole injecting / transporting material is preferably doped with an acceptor.
  • an acceptor a known acceptor material for organic EL can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • Acceptor materials include Au, Pt, W, Ir, POCl 3 , AsF 6 , Cl, Br, I, vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ), and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF 4 (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc.
  • TNF trinitrofluorenone
  • DNF dinitrofluorenone
  • organic materials such as fluoranyl, chloranil and bromanyl.
  • compounds having a cyano group such as TCNQ, TCNQF 4 , TCNE, HCNB, DDQ and the like are more preferable because they can increase the carrier concentration more effectively.
  • Examples of the electron injecting and transporting material include n-type semiconductor inorganic materials, oxadiazole derivatives, triazole derivatives, thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, diphenoquinone derivatives, fluorenone derivatives, benzodifuran derivatives, etc. Low molecular materials; polymer materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS) can be mentioned.
  • examples of the electron injection material include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).
  • the material used for the electron injection layer is a material having an energy level of the lowest unoccupied molecular orbital (LUMO) higher than that of the electron injection and transport material used for the electron transport layer in that the electron injection and transport from the cathode are performed more efficiently. It is preferable to use a material having a higher electron mobility than the electron injecting and transporting material used for the electron injecting layer.
  • LUMO lowest unoccupied molecular orbital
  • the electron injecting and transporting material in order to further improve the electron injecting and transporting properties, it is preferable to dope the electron injecting and transporting material with a donor.
  • a donor a known donor material for organic EL can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, In, anilines, phenylenediamines, benzidines (N, N, N ′, N′-tetraphenyl) Benzidine, N, N'-bis- (3-methylphenyl) -N, N'-bis- (phenyl) -benzidine, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl- Benzidine, etc.), triphenylamines (triphenylamine, 4,4′4 ′′ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N-3- Methylphenyl-N-phenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N- (1-naphthyl) -N
  • An organic EL layer such as a light emitting layer, a hole transport layer, an electron transport layer, a hole injection layer, and an electron injection layer is spin-coated using a coating liquid for forming an organic EL layer in which the above materials are dissolved and dispersed in a solvent.
  • Known wet methods such as coating methods, dipping methods, doctor blade methods, discharge coating methods, spray coating methods, etc., inkjet methods, letterpress printing methods, intaglio printing methods, screen printing methods, printing methods such as microgravure coating methods, etc.
  • the coating liquid for organic EL layer formation may contain the additive for adjusting the physical properties of coating liquid, such as a leveling agent and a viscosity modifier.
  • each organic EL layer is usually about 1 nm to 1000 nm, but preferably 10 nm to 200 nm. If the film thickness is less than 10 nm, the physical properties (charge injection characteristics, transport characteristics, confinement characteristics) that are originally required cannot be obtained. In addition, pixel defects due to foreign matters such as dust may occur. On the other hand, if the film thickness exceeds 200 nm, the drive voltage increases due to the resistance component of the organic EL layer, leading to an increase in power consumption.
  • the organic EL element is an edge portion of the first electrode formed on the substrate side between the first electrode and the second electrode, and the first electrode and the second electrode. It is preferable to have an edge cover for the purpose of preventing leakage between the two.
  • the edge cover can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using an insulating material, and a known dry or wet photolithography.
  • the present embodiment is not limited to these forming methods.
  • a known material can be used as a material constituting the insulating layer, and it is not particularly limited in this embodiment, but it is necessary to transmit light.
  • a known material can be used as a material constituting the insulating layer, and it is not particularly limited in this embodiment, but it is necessary to transmit light.
  • the film thickness is preferably 100 nm to 2000 nm. When the film thickness is 100 nm or less, the insulation is not sufficient, and leakage occurs between the first electrode and the second electrode, resulting in an increase in power consumption and non-light emission. On the other hand, if the film thickness is 2000 nm or more, the film forming process takes time, which causes deterioration in productivity and disconnection of the second electrode at the edge cover.
  • the organic EL element preferably has a microcavity structure (optical microresonator structure) due to an interference effect between the semitransparent electrodes by using a semitransparent electrode for both the anode and the cathode.
  • a microcavity structure optical microresonator structure
  • the transmissivity of the semi-transparent electrodes it becomes possible to condense the light emitted from the organic EL element in an arbitrary direction (provide directivity). It is possible to reduce the light emission loss that escapes to the surroundings, and to increase the light emission efficiency in the front. As a result, it is possible to more efficiently propagate light emission energy generated in the light emitting layer of the organic EL element to the phosphor layer, and to increase the front luminance.
  • the emission spectrum can be adjusted due to the interference effect, and the emission spectrum can be adjusted by adjusting to a desired emission peak wavelength and half width. Therefore, it is possible to improve the color purity of the blue pixel by controlling the spectrum so that the red and green phosphors can be excited more effectively.
  • the excitation light L1 emitted from the excitation light source element 13 isotropically radiates.
  • excitation light L1a emitted directly toward the phosphor layer 16 is directly incident on the phosphor layer 16 and excites the phosphor layer 16.
  • the excitation light L1b radiated toward the side opposite to the phosphor layer 16, that is, toward the substrate 11 is incident on the wavelength selective transmission / reflection film 12 formed on the substrate 11.
  • the wavelength selective transmission / reflection film 12 absorbs or reflects at least a part of the excitation light L1 and transmits a part of the fluorescence L2 emitted from the phosphor layer 16, and in this embodiment, the excitation light.
  • the light in the wavelength region of L1 is reflected. For this reason, the excitation light L1b radiated toward the substrate 11 side is reflected toward the phosphor layer 16 by the wavelength selective transmission / reflection film 12.
  • the excitation light L1b emitted to the side opposite to the phosphor layer 16 can also be used to excite the phosphor layer 16.
  • the amount of excitation light absorbed by the phosphor layer 16 can be increased (increase in fluorescence quantum yield), and the amount of light emitted from the phosphor layer 16 itself can be increased.
  • FIG. 6 is a graph showing an example of light reflection characteristics and light transmission characteristics of the wavelength selection layer used in the light emitting device of the first embodiment. According to these graphs, the wavelength selection layer reflects almost all (97% or more) of the excitation light wavelength range in the range of about ⁇ 20 nm centered on the wavelength of 450 nm, and 3% of the light that can be transmitted in this wavelength range is 3%. It is suppressed to the following.
  • the fluorescence wavelength range (95% or more) can be transmitted.
  • the wavelength selective layer having such optical characteristics, the excitation light emitted toward the wavelength selective transmission / reflection film opposite to the phosphor layer is reliably reflected toward the phosphor layer, and the phosphor It can be seen that the fluorescence emitted from the layer can be emitted toward the outside of the light emitting device with almost no loss.
  • FIG. 2 is a schematic cross-sectional view showing an example of a light emitting device according to the second embodiment of the present invention.
  • the light emitting device 20 includes a substrate 11, a wavelength selective transmission / reflection film 12, an excitation light source element 13, a sealing layer 14, an adhesive layer 15, a phosphor layer 16, and a sealing layer, which are sequentially stacked on one surface 11 a of the substrate 11.
  • a substrate 17 is provided.
  • the reflection film 19 is formed opposite to the wavelength selective transmission / reflection film 12 with the excitation light source element 13 interposed therebetween, that is, between the phosphor layer 16 and the sealing substrate 17. .
  • the reflection film 19 is a functional film that reflects at least a part of the excitation light L1 and a part of the fluorescence L2.
  • the excitation light source element 13 for example, an inorganic EL element can be used.
  • the ultraviolet light emitting inorganic EL and the blue light emitting inorganic EL include, for example, a substrate, a first electrode, a first dielectric layer, a light emitting layer, a first light emitting layer, Although composed of two dielectric layers and a second electrode, it is not limited to these.
  • examples of the substrate 11 include an inorganic material substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, etc., a ceramic substrate made of alumina, etc.
  • This embodiment is not limited to these board
  • the first electrode and the second electrode include a metal such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), and indium (
  • the transparent electrode material include oxide (ITO) made of In) and tin (Sn), oxide of Sn (Sn) (SnO 2 ), oxide made of indium (In) and zinc (Zn) (IZO), and the like.
  • ITO oxide
  • Sn oxide of Sn
  • IZO 2 oxide made of indium (In) and zinc (Zn)
  • this embodiment is not limited to these materials.
  • a transparent electrode such as ITO is good in the light extraction direction, and it is preferable to use a reflective film such as aluminum on the side opposite to the light extraction direction.
  • the first electrode and the second electrode can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials.
  • the forming method is not limited.
  • the formed electrode can be patterned by a photolithography method or a laser peeling method, or a directly patterned electrode can be formed by combining with a shadow mask.
  • the film thickness is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.
  • a known dielectric material for inorganic EL can be used as the first and second dielectric layers.
  • dielectric materials include tantalum pentoxide (Ta 2 O 5 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), aluminum titanate ( Examples include AlTiO 3 ) barium titanate (BaTiO 3 ) and strontium titanate (SrTiO 3 ), but this embodiment is not limited thereto.
  • the first and second dielectric layers may be one type selected from the above-mentioned dielectric materials or a structure in which two or more types of materials are laminated.
  • the film thickness of the dielectric is preferably about 200 nm to 500 nm.
  • a known light emitting material for inorganic EL can be used as the light emitter.
  • a light emitting material for example, ZnF 2 : Gd as an ultraviolet light emitting material, BaAl 2 S 4 : Eu, CaAl 2 S 4 : Eu, ZnAl 2 S 4 : Eu, Ba 2 as a blue light emitting material.
  • Examples include SiS 4 : Ce, ZnS: Tm, SrS: Ce, SrS: Cu, CaS: Pb, (Ba, Mg) Al 2 S 4 : Eu, but the present embodiment is not limited thereto.
  • the thickness of the light emitting layer is preferably about 300 nm to 1000 nm.
  • the phosphor layer 16 absorbs excitation light from an ultraviolet light emitting organic EL element, a blue light emitting organic EL element, an ultraviolet light emitting LED, a blue LED, etc., and emits blue, green, red light, a blue phosphor layer, a red phosphor layer, It is composed of a green phosphor layer and the like. Moreover, it is preferable to add phosphors emitting light of cyan and yellow to the pixels as necessary.
  • the color reproduction range can be further expanded as compared with a display device using pixels that emit three primary colors of green and blue.
  • the phosphor 16 layer may be composed only of the phosphor materials exemplified below, and may optionally contain additives, etc., and these materials are in a polymer material (binding resin) or an inorganic material.
  • the configuration may be distributed in a distributed manner.
  • a known phosphor material can be used as the phosphor material of the present embodiment. Such phosphor materials are classified into organic phosphor materials and inorganic phosphor materials. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials. .
  • Organic phosphor materials include, as fluorescent dyes that convert ultraviolet excitation light into blue light emission, stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstil Benzene, coumarin dyes: 7-hydroxy-4-methylcoumarin and the like.
  • coumarin dyes 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1 -Gh) Coumarin (coumarin 153), 3- (2'-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2'-benzimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), na Phthalimide dyes: basic yellow 51, solvent yellow 11, solvent yellow 116 and the like.
  • cyanine dyes 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran
  • pyridine Dyes 1-ethyl-2- [4- (p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate
  • rhodamine dyes rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101 and the like.
  • an inorganic phosphor material as a phosphor that converts ultraviolet excitation light into blue light emission, Sr 2 P 2 O 7 : Sn 4+ , Sr 4 Al 14 O 25 : Eu 2+ , BaMgAl 10 O 17 : Eu 2+ , SrGa 2 S 4 : Ce 3+ , CaGa 2 S 4 : Ce 3+ , (Ba, Sr) (Mg, Mn) Al 10 O 17 : Eu 2+ , (Sr, Ca, Ba 2 , 0 Mg) 10 (PO 4 ) 6 Cl 2 : Eu 2+ , BaAl 2 SiO 8 : Eu 2+ , Sr 2 P 2 O 7 : Eu 2+ , Sr 5 (PO 4 ) 3 Cl: Eu 2+ , (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu 2+ , BaMg 2 Al 16 O 27 : Eu 2+ , (Ba, Ca) 5 (PO 4 ) 3 Cl: Eu 2+ ,
  • Y 2 O 2 S Eu 3+ , YAlO 3 : Eu 3+ , Ca 2 Y 2 (SiO 4 ) 6 : Eu 3 + , LiY 9 (SiO 4 ) 6 O 2 : Eu 3+ , YVO 4 : Eu 3+ , CaS: Eu 3+ , Gd 2 O 3 : Eu 3+ , Gd 2 O 2 S: Eu 3+ , Y ( P, V) O 4 : Eu 3+ , Mg 4 GeO 5.5 F: Mn 4+ , Mg 4 GeO 6 : Mn 4+ , K 5 Eu 2.5 (WO 4 ) 6.25 , Na 5 Eu 2.5 (WO 4 ) 6.25 Examples thereof include K 5 Eu 2.5 (MoO 4 ) 6.25 and Na 5 Eu 2.5 (MoO 4 ) 6.25 .
  • the inorganic phosphor may be subjected to a surface modification treatment as necessary.
  • a surface modification treatment physical treatment by chemical treatment such as a silane coupling agent or addition of fine particles of submicron order, etc. And the like due to the combined treatment thereof.
  • an inorganic material it is preferable to use an inorganic material.
  • the average particle size (d 50 ) is preferably 0.5 ⁇ m to 50 ⁇ m.
  • the average particle size is 1 ⁇ m or less, the luminous efficiency of the phosphor is drastically reduced.
  • it is 50 ⁇ m or more, it becomes very difficult to form a flat film, and depletion occurs between the phosphor layer and the organic EL element (organic EL element (refractive index: about 1.7). ) And the inorganic phosphor layer (refractive index: about 2.3) depletion (refractive index: 1.0)).
  • the light from an organic EL element cannot reach an inorganic fluorescent layer efficiently, and the problem that the luminous efficiency of a fluorescent substance layer falls arises.
  • the phosphor layer 16 is prepared by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, a doctor blade method, a discharge coating method, Known wet processes such as coating methods such as spray coating, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, microgravure coating methods, and the like, and resistance heating vapor deposition method, electron beam ( EB) It can be formed by a known dry process such as a vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor deposition (OVPD) method, or a laser transfer method.
  • a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent
  • spin coating method such as spray coating, ink jet methods, letterpress printing methods, intaglio printing methods,
  • the phosphor layer 16 can be patterned by a photolithography method by using a photosensitive resin as the polymer resin.
  • a photosensitive resin one of photosensitive resins (photo-curable resist material) having a reactive vinyl group such as acrylic acid resin, methacrylic acid resin, polyvinyl cinnamate resin, and hard rubber resin. It is possible to use one kind or a mixture of plural kinds.
  • wet processes such as the ink jet method, relief printing method, intaglio printing method, screen printing method, resistance heating vapor deposition method using shadow mask, electron beam (EB) vapor deposition method, molecular beam epitaxy (MBE) method, sputtering method It is also possible to directly pattern the phosphor material by a known dry process such as an organic vapor deposition (OVPD) method or a laser transfer method.
  • a known dry process such as an organic vapor deposition (OVPD) method or a laser transfer method.
  • the film thickness of the phosphor layer 16 is usually about 100 nm to 100 ⁇ m, for example, but preferably 1 ⁇ m to 100 ⁇ m. If the film thickness is less than 100 nm, it is impossible to sufficiently absorb the blue light emitted from the organic EL, so that the light emission efficiency is lowered, and the color purity is deteriorated by mixing blue transmitted light with the required color. Problems arise. Further, in order to increase absorption of light emitted from the organic EL and reduce blue transmitted light to such an extent that the color purity is not adversely affected, the film thickness is preferably 1 ⁇ m or more. Further, when the film thickness exceeds 100 ⁇ m, the blue light emission from the organic EL element is already sufficiently absorbed. Therefore, the efficiency is not increased, but only the material is consumed and the material cost is increased.
  • the cross-sectional shape of the phosphor layer 16 of the present embodiment is higher than that of the light absorption layer in order to efficiently emit light to the side surface of the phosphor layer 16 and to take out to the outside by the reflective layer 19. It is preferable that the portion has a tapered shape. Thereby, the reflective layer 19 can be efficiently formed on the side surface of the phosphor layer 16 and the surface opposite to the light extraction direction at the same time.
  • the reflection layer 19 is provided between the phosphor layer 16 and the sealing substrate 17 and has a characteristic of reflecting at least a part of the excitation light L1 and a part of the fluorescence L2 from the phosphor layer 16. Just do it.
  • the reflective layer 19 include reflective metals such as aluminum, silver, gold, an aluminum-lithium alloy, an aluminum-neodymium alloy, and an aluminum-silicon alloy, but this embodiment is limited to these substrates. It is not a thing.
  • the reflective film 19 can be formed by, for example, resistance heating vapor deposition, electron beam (EB) vapor deposition, molecular beam epitaxy (MBE), or sputtering.
  • EB electron beam
  • MBE molecular beam epitaxy
  • the reflective film 19 has a reflectance of 50% or more at the maximum wavelength of the excitation light L1 and the maximum wavelength of the fluorescence L2. More preferably, it has a reflectance of 80% or more at the maximum wavelength of the excitation light L1 and the maximum wavelength of the fluorescence L2.
  • a color filter on the substrate 11 side of the light emitting device 20, or between the sealing substrate 17 and the wavelength selective transmission / reflection film 12, or on the sealing substrate 17 side.
  • a conventional color filter can be used as the color filter.
  • the color purity of red, green, and blue pixels can be increased, and the color reproduction range of the display device can be expanded.
  • the same substrate 11 can be used, for example, an inorganic material substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, etc., a ceramic substrate made of alumina, etc.
  • An insulating substrate such as aluminum, a metal substrate made of aluminum (Al), iron (Fe), or the like, or a substrate coated on the surface with an insulator made of silicon oxide (SiO 2 ), an organic insulating material, or the like
  • Examples include a substrate obtained by subjecting the surface of a metal substrate made of Al or the like to insulation treatment by a method such as anodic oxidation, but the present embodiment is not limited to these substrates.
  • the sealing layer 14 and the adhesive layer 15 can use conventional sealing layers and adhesive layers, and the present invention is not particularly limited. Further, a protective film may be further formed in addition to the sealing layer 14.
  • the sealing layer 14 and the protective film can be formed as a sealing film by applying a resin material using a spin coating method, ODF, or a laminating method, such as plasma CVD, ion plating, After forming an inorganic film such as SiO, SiON, or SiN by a beam method, a sputtering method, or the like, a sealing material is further applied by applying or bonding a resin material using a spin coating method, an ODF, or a laminating method. 14 can also be used.
  • Such a sealing layer 14 can prevent the entry of oxygen and moisture into the light emitting element from the outside, and the life of the excitation light source element 13 can be improved. Further, when the substrate 11 and the sealing substrate 17 are bonded, the bonding layer 15 can be bonded with a conventional ultraviolet curable resin, a thermosetting resin, or the like.
  • an inert gas such as nitrogen gas or argon gas between the substrate 11 and the sealing substrate 17.
  • a moisture absorbent such as barium oxide in the enclosed inert gas because the influence of moisture on the organic EL can be effectively reduced.
  • the present embodiment is not limited to these members and forming methods.
  • the light emitting device 20 is preferably further provided with a polarizing plate on the light extraction side, that is, on the side where the fluorescence L2 is emitted to the outside.
  • a polarizing plate a combination of a conventional linear polarizing plate and a ⁇ / 4 plate can be used.
  • the polarizing plate it is possible to prevent external light reflection from the electrodes and external light reflection from the surface of the substrate 11 or the sealing substrate 17, and the contrast of the display device can be improved. .
  • FIG. 3 is a schematic cross-sectional view showing an example of a light emitting device according to the third embodiment of the present invention.
  • the light emitting device 30 includes a substrate 31, a phosphor layer 36, an excitation light source element 33, a wavelength selective transmission / reflection film 32, a sealing layer 34, an adhesive layer 35, and a sealing substrate 37 that are sequentially stacked on the substrate 31. ing.
  • Excitation light L1 emitted from the excitation light source element 33 isotropically radiates.
  • excitation light L1a emitted directly toward the phosphor layer 36 is directly incident on the phosphor layer 36 and excites the phosphor layer 36.
  • the excitation light L 1 b radiated toward the side opposite to the phosphor layer 36 is incident on the wavelength selective transmission / reflection film 32.
  • the excitation light L1b is reflected toward the phosphor layer 36 by the wavelength selective transmission / reflection film 32. Therefore, the excitation light L1b emitted toward the side opposite to the phosphor layer 36 in the excitation light L1 can also be used to excite the phosphor layer 36.
  • FIG. 4 is a schematic cross-sectional view showing an example of a light emitting device according to the fourth embodiment of the present invention.
  • the light emitting device 40 includes a substrate 41, a reflective film 49, a phosphor layer 46, an excitation light source element 43, a wavelength selective transmission reflective film 42, a sealing layer 44, an adhesive layer 45, and a sealing layer that are sequentially stacked on the substrate 41.
  • a substrate 47 is provided.
  • Excitation light L1 emitted from the excitation light source element 43 is emitted isotropically.
  • excitation light L1a directly emitted toward the phosphor layer 46 is directly incident on the phosphor layer 46 and excites the phosphor layer 46.
  • the excitation light L1b emitted toward the side opposite to the phosphor layer 46 is incident on the wavelength selective transmission / reflection film 42.
  • the excitation light L1b is reflected toward the phosphor layer 46 by the wavelength selective transmission / reflection film 42. Therefore, the excitation light L1b emitted toward the side opposite to the phosphor layer 46 in the excitation light L1 can also be used to excite the phosphor layer 46.
  • the excitation light L1 is efficiently absorbed by the phosphor layer 46, and the fluorescence L2 generated in the phosphor layer 46 is efficiently reflected toward the sealing substrate 47 on the emission side. .
  • FIG. 5 is a schematic cross-sectional view showing an example of a light emitting device according to the fifth embodiment of the present invention.
  • the light emitting device 50 includes a substrate 51, a wavelength selective transmission / reflection film 52, an excitation light source element 53, a sealing layer 54, an adhesive layer 55, a phosphor layer 56, and a sealing substrate 57 that are sequentially stacked on the substrate 51. ing.
  • Excitation light L1 emitted from the excitation light source element 53 isotropically radiates.
  • excitation light L1a directly emitted toward the phosphor layer 56 is directly incident on the phosphor layer 56 and excites the phosphor layer 56.
  • the excitation light L 1 b radiated toward the side opposite to the phosphor layer 56 enters the wavelength selective transmission / reflection film 52.
  • the excitation light L1b is reflected toward the phosphor layer 56 by the wavelength selective transmission / reflection film 52.
  • the excitation light L1b emitted toward the opposite side of the phosphor layer 56 can also be used to excite the phosphor layer 56.
  • the external light L3 incident from the substrate 51 side is reflected by the wavelength selective transmission / reflection film 52 so that the external light L3 does not reach the phosphor layer 56. Therefore, the phosphor layer 56 by the external light L3.
  • the fluorescence L2 having excellent contrast and high color purity can be emitted from the substrate 51 side.
  • FIG. 7 is an explanatory view showing stepwise the manufacturing process of the light emitting device according to this embodiment.
  • the substrate 11 is prepared ((a) of FIG. 7).
  • the wavelength selective transmission / reflection film 12 is formed on the substrate 11 (FIG. 7B).
  • An excitation light source element 13, for example, an organic EL element is formed on the wavelength selective transmission / reflection film 12 ((c) of FIG. 7).
  • the excitation light source element 13 is sealed with the sealing layer 14, and the board
  • a sealing substrate 17 to be bonded to the substrate on the excitation light source element side is prepared ((e) in FIG. 7). And this sealing substrate 17 is bonded together with the sealing layer 14 of the board
  • FIG. 8 is a cross-sectional view showing an active matrix driving type organic EL display which is an example of a display device including the light emitting device of the present embodiment.
  • a TFT which is an active driving element including a gate electrode 126, a drain electrode 127, a source electrode 108, a gate insulating film 129, a wiring 131, a through hole, and the like is formed on one surface of a substrate 101.
  • a wavelength selective transmission / reflection film 117 is formed on the TFT with the interlayer insulating film 132 interposed therebetween. Furthermore, the anode 102, the edge cover 122, the hole injection layer 103, the hole transport layer 104, the electron blocking layer 105, the light emitting layer 106, the hole blocking layer 107, the electron transport layer 108, and the electron injection that constitute the excitation light source element 118. A layer 109 and a cathode 110 are formed.
  • An adhesive layer 112 is formed on the excitation light source element 118.
  • a red light emitting phosphor layer 124 and a green light emitting phosphor layer 125 defined by a reflective film 120, a partition wall 123 are formed on the sealing substrate 116 side. Then, the sealing substrate 116 side and the substrate 101 side are bonded via the adhesive layer 112. According to the light emitting device of this embodiment, the excitation light emitted from the excitation light source element 118 is incident on the red light emitting phosphor layer 124 and the green light emitting phosphor layer 125 formed on the sealing substrate 116.
  • Red fluorescence and green fluorescence generated by the excitation light entering the red light emitting phosphor layer 124 and the green light emitting phosphor layer 125 are emitted in a direction opposite to the incident direction of the excitation light. That is, the generated fluorescence passes through the excitation light source element 118 and the wavelength selective transmission / reflection film 117 and is emitted from the substrate 101.
  • the emission color of the excitation light source element 118 is blue, the blue light emitting phosphor layer is not provided, but the present embodiment is not limited to this configuration. Further, since the blue light emitted from the excitation light source element 118 does not need to enter the phosphor layer, it is not necessary to provide the wavelength selective transmission / reflection film 117 in the portion where the blue light is emitted.
  • FIG. 9 is a schematic diagram illustrating a configuration example of a control portion of the display device.
  • the display device 130 includes a first substrate 131, a pixel portion G, a gate signal side driving circuit 132, a data signal side driving circuit 133, a wiring 134, a current supply line 135, a second substrate (sealing substrate) 136, and an FPC (Flexible printed). circuit) 137 and an external drive circuit 138.
  • the external driving circuit 138 sequentially selects the scanning lines (scanning lines) of the pixel portion G by the gate signal side driving circuit 132, and the data signal side for each pixel element arranged along the selected scanning line. Pixel data is written by the drive circuit 133. That is, the gate signal side driving circuit 132 sequentially drives the scanning lines, and the data signal side driving circuit 133 outputs pixel data to the data lines, so that the driven scanning lines and the data lines from which the data is output intersect. The pixel element arranged at the position to be driven is driven.
  • the display device can be applied to, for example, the mobile phone shown in FIG.
  • a cellular phone 60 shown in FIG. 10 includes an audio input unit 61, an audio output unit 62, an antenna 63, an operation switch 64, a display unit 65, a housing 66, and the like.
  • the display apparatus of the above-mentioned embodiment can be applied suitably as the display part 61.
  • FIG. By applying the display device according to an embodiment of the present invention to the display unit 65 of the mobile phone 60, it is possible to display a high contrast image with low power consumption.
  • the organic EL device 1 according to an embodiment of the present invention can be applied to, for example, a flat-screen television shown in FIG.
  • a thin television 70 shown in FIG. 11 includes a display unit 71, speakers 72, a cabinet 73, a stand 74, and the like.
  • the display device of the above-described embodiment can be suitably applied as the display unit 71.
  • the display device according to an embodiment of the present invention can be applied to, for example, a portable game machine shown in FIG.
  • a portable game machine 80 shown in FIG. 12 includes operation buttons 81 and 82, an external connection terminal 83, a display unit 84, a housing 85, and the like.
  • the display apparatus of the above-mentioned embodiment can be applied suitably as the display part 84.
  • FIG. By applying the display device according to the embodiment of the present invention to the display unit 84 of the portable game machine 80, it is possible to display a high contrast video with low power consumption.
  • the display device can be applied to, for example, a notebook computer shown in FIG.
  • a notebook computer 90 shown in FIG. 13 includes a display unit 91, a keyboard 92, a touch pad 93, a main switch 94, a camera 95, a recording medium slot 96, a housing 97, and the like.
  • the display apparatus of the above-mentioned embodiment can be applied suitably as the display part 91 of this notebook personal computer 90.
  • FIG. By applying the display device according to the embodiment of the present invention to the display unit 91 of the notebook computer 90, the notebook computer 90 capable of displaying a high contrast image with low power consumption can be realized.
  • the display device according to an embodiment of the present invention can be applied to, for example, a ceiling light shown in FIG.
  • the ceiling light 150 shown in FIG. 14 includes a light emitting unit 151, a hanging line 152, a power cord 153, and the like.
  • the display apparatus of the above-mentioned embodiment can be applied suitably as the light emission part 151.
  • FIG. By applying the display device according to an embodiment of the present invention to the light emitting unit 151 of the ceiling light 150, it is possible to obtain illumination light of a free color tone with low power consumption, and to realize a lighting device with high light performance. be able to. In addition, it is possible to realize a lighting fixture capable of emitting surface light with high color purity with uniform illuminance.
  • the display device according to an embodiment of the present invention can be applied to, for example, a lighting stand shown in FIG.
  • the illumination stand 160 shown in FIG. 15 includes a light emitting unit 161, a stand 162, a main switch 163, a power cord 164, and the like.
  • the display device of the present invention can be suitably applied as the light emitting unit 161.
  • By applying the display device according to an embodiment of the present invention to the light emitting unit 161 of the ceiling light 160 it is possible to obtain illumination light of a free color tone with low power consumption, and to realize a lighting fixture with high light performance. be able to.
  • Example 1 In this embodiment, an example in which a substrate, a wavelength selective transmission / reflection film, an organic EL element as an excitation light source element, a phosphor layer, and a sealing substrate are combined will be described.
  • As the substrate 0.7 mm glass was used. After washing with water, pure water ultrasonic cleaning 10 minutes, acetone ultrasonic cleaning 10 minutes, and isopropyl alcohol vapor cleaning 5 minutes were performed, followed by drying at 100 ° C. for 1 hour.
  • ITO indium-tin oxide
  • a reflective electrode anode
  • the first electrode was patterned into 90 stripes with a width of 160 ⁇ m and a pitch of 200 ⁇ m by a conventional photolithography method.
  • SiO 2 is deposited to 200 nm on the first electrode by a sputtering method, and is patterned by a conventional photolithography method so as to cover only the edge portion of the first electrode.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 .
  • this substrate was fixed to a substrate holder in a resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less to form each organic layer.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • NPD N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine
  • a hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium ( III) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec.
  • a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a transparent electrode was formed as the second electrode.
  • the substrate was fixed to a metal deposition chamber.
  • a shadow mask for forming a second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 500 ⁇ m and a pitch of 600 ⁇ m in a direction opposite to the stripe of the first electrode) and the above-mentioned
  • the substrate is aligned, and magnesium and silver are co-deposited on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 0.1 sec / sec and 0.9 sec / sec in a desired pattern (thickness) 1 nm).
  • indium-zinc oxide IZO
  • IZO indium-zinc oxide
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method.
  • a phosphor substrate was produced by forming a yellow phosphor layer having a thickness of 500 ⁇ m on the substrate.
  • the yellow phosphor layer In the formation of the yellow phosphor layer, first, 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane were added to 0.16 g of aerosil having an average particle diameter of 5 nm, followed by stirring at room temperature for 1 hour. This mixture and 20 g of the yellow phosphor Y 5 Al 5 O 12 were transferred to a mortar and thoroughly mixed, and then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours to surface-modify Y 5. Al 5 O 12 was obtained.
  • the substrate on which the organic EL element is formed as an excitation light source and the phosphor substrate are brought into close contact with each other through an existing UV curable resin.
  • the light emitting device was completed by curing by exposing to UV light from the side where the element was formed.
  • a voltage of 5V was applied to the organic EL element to evaluate the characteristics.
  • white light emission in which blue light emission from the organic EL element and yellow light emission from the phosphor were combined was observed from the organic EL side. Further, no light emission was observed from the phosphor side.
  • Example 2 In this embodiment, an example in which a substrate, an organic EL element as an excitation light source element, a wavelength selective transmission / reflection film, and a sealing substrate are combined will be described.
  • the substrate 0.7 mm glass was used. After washing with water, pure water ultrasonic cleaning 10 minutes, acetone ultrasonic cleaning 10 minutes, and isopropyl alcohol vapor cleaning 5 minutes were performed, followed by drying at 100 ° C. for 1 hour. First, a yellow phosphor layer was formed on a substrate. The formation of the yellow phosphor layer was the same as in Example 1. Next, a 10 ⁇ m flattening film made of transparent polyimide was formed on the phosphor layer.
  • an organic EL comprising a first electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a second electrode on the planarizing film in the same manner as in Example 1.
  • An element was formed.
  • an inorganic protective layer made of SiO 2 was formed by plasma CVD as in Example 1.
  • nine layers of SiO 2 (refractive index: 1.4) and eight layers of TiO 2 (refractive index: 2.1) are alternately deposited in a vacuum to form a wavelength selective transmission / reflection film. Formed.
  • the film thickness of each layer is set to 120 nm which is a quarter of the wavelength 480 nm of light to be reflected.
  • this dielectric multilayer film reflected 96% of light having a wavelength region of 480 nm or less and transmitted 95% of light having a wavelength of 640 nm.
  • the substrate and the sealing substrate are brought into close contact with each other through an existing UV curable resin in a glove box whose moisture content and oxygen content are controlled to 1 ppm or less, and UV light is exposed from the sealing substrate side.
  • the light emitting device was completed by curing.
  • a voltage of 5V was applied to the organic EL element to evaluate the characteristics.
  • white light emission in which blue light emission from the organic EL element and yellow light emission from the phosphor were combined was observed from the organic EL side. Further, no light emission was observed from the phosphor side.
  • Example 3 In this embodiment, an example in which a substrate, a wavelength selective transmission / reflection film, an organic EL element, a phosphor layer, a reflection film, and a sealing substrate are combined will be described.
  • As the substrate 0.7 mm glass was used. After washing with water, pure water ultrasonic cleaning 10 minutes, acetone ultrasonic cleaning 10 minutes, and isopropyl alcohol vapor cleaning 5 minutes were performed, followed by drying at 100 ° C. for 1 hour. First, nine layers of SiO 2 (refractive index: 1.4) and eight layers of TiO 2 (refractive index: 2.1) were alternately deposited in a vacuum to form a wavelength selective transmission / reflection film.
  • the film thickness of each layer is set to 120 nm which is a quarter of the wavelength 480 nm of light to be reflected.
  • this dielectric multilayer film reflected 96% of light having a wavelength region of 480 nm or less and transmitted 95% of light having a wavelength of 640 nm.
  • ITO indium-tin oxide
  • a reflection electrode anode
  • SiO 2 was deposited to 200 nm on the first electrode by a sputtering method, and was patterned by a conventional photolithography method so as to cover only the edge portion of the first electrode.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 .
  • this substrate was fixed to a substrate holder in a resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less to form each organic layer.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine is used as a hole transport material.
  • a hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III ) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec.
  • UH-2 1,4-bis-triphenylsilyl-benzene
  • FIrpic picolinate iridium
  • a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF). Thereafter, a transparent electrode was formed as the second electrode.
  • the substrate was fixed to a metal deposition chamber.
  • a shadow mask for forming a second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 500 ⁇ m and a pitch of 600 ⁇ m in a direction opposite to the stripe of the first electrode) and the above-mentioned
  • the substrate is aligned, and magnesium and silver are co-deposited on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 0.1 sec / sec and 0.9 sec / sec in a desired pattern (thickness) 1 nm).
  • indium-zinc oxide IZO
  • IZO indium-zinc oxide
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method.
  • a phosphor substrate having a thickness of 50 ⁇ m was formed on the substrate to produce a phosphor substrate.
  • red phosphor layer 500 nm of aluminum was formed as a reflective film by EB vapor deposition. Next, a red phosphor layer was formed on the reflective film. In the formation of the red phosphor layer, first, 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane were added to 0.16 g of aerosil having an average particle diameter of 5 nm, and the mixture was stirred at room temperature for 1 hour. This mixture and 20 g of red phosphor K 5 Eu 2.5 (WO 4 ) 6.25 were transferred to a mortar and mixed well, then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours to modify the surface.
  • WO 4 red phosphor K 5 Eu 2.5
  • K 5 Eu 2.5 (WO 4 ) 6.25 was obtained.
  • a phosphor forming coating solution was prepared.
  • the red phosphor-forming coating solution prepared above was applied to a region where the low reflection layer on the glass was not formed by a screen printing method. Subsequently, it was heated and dried in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a red phosphor layer having a thickness of 50 ⁇ m.
  • the substrate on which the organic EL element is formed as an excitation light source and the phosphor substrate are brought into close contact with each other through an existing UV curable resin.
  • the light emitting device was completed by curing by exposing to UV light from the side where the element was formed.
  • a voltage of 5V was applied to the organic EL element to evaluate the characteristics. As light emission, no light emission from the organic EL element was observed from the wavelength selective transmission / reflection film, and only red light emission from the phosphor was observed. Further, no light emission was observed from the reflective film side.
  • Example 4 In this embodiment, an example in which a substrate, a reflection film, a phosphor layer, an organic EL element, a wavelength selective transmission reflection film, and a sealing substrate are combined will be described.
  • As the substrate 0.7 mm glass was used. After washing with water, pure water ultrasonic cleaning 10 minutes, acetone ultrasonic cleaning 10 minutes, and isopropyl alcohol vapor cleaning 5 minutes were performed, followed by drying at 100 ° C. for 1 hour.
  • Example 1 a 10 ⁇ m flattening film made of transparent polyimide was formed on the phosphor layer.
  • an organic EL comprising a first electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a second electrode on the planarizing film in the same manner as in Example 1.
  • An element was formed.
  • an inorganic protective layer made of SiO 2 was formed by plasma CVD as in Example 1.
  • Example 3 a wavelength selective transmission / reflection film was formed in the same manner as in Example 3. Finally, the substrate and the sealing substrate are brought into close contact with each other through an existing UV curable resin in a glove box whose moisture content and oxygen content are controlled to 1 ppm or less, and UV light is exposed from the sealing substrate side. The light emitting device was completed by curing.
  • a voltage of 5V was applied to the organic EL element to evaluate the characteristics. As light emission, no light emission from the organic EL element was observed from the wavelength selective transmission / reflection film, and only red light emission from the phosphor was observed. Also, no light emission was observed from the reflective film.
  • Example 5 In this embodiment, an example in which an active drive blue organic EL and a phosphor system are combined will be described.
  • An amorphous silicon semiconductor film was formed on a 100 mm ⁇ 100 mm square glass substrate by PECVD. Subsequently, a polycrystalline silicon semiconductor film was formed by performing a crystallization treatment. Next, the polycrystalline silicon semiconductor film was patterned into a plurality of islands by using a photolithography method. Subsequently, a gate insulating film and a gate electrode layer were formed in this order on the patterned polycrystalline silicon semiconductor layer, and patterning was performed using a photolithography method.
  • the patterned polycrystalline silicon semiconductor film was doped with an impurity element such as phosphorus to form source and drain regions, and a TFT element was fabricated. Thereafter, a planarizing film was formed.
  • a silicon nitride film formed by PECVD and an acrylic resin layer were formed in this order using a spin coater. First, after forming a silicon nitride film, the silicon nitride film and the gate insulating film were etched together to form a contact hole leading to the source and / or drain region, and then a source wiring was formed.
  • an active matrix substrate was completed by forming an acrylic resin layer and forming a contact hole leading to the drain region at the same position as the contact hole of the drain region drilled in the gate insulating film and the silicon nitride film.
  • the function as a planarizing film was realized by an acrylic resin layer.
  • the capacitor for setting the gate potential of the TFT to a constant potential is formed by interposing an insulating film such as an interlayer insulating film between the drain of the switching TFT and the source of the driving TFT.
  • the film thickness of each layer is set to 120 nm which is a quarter of the wavelength 480 nm of light to be reflected.
  • the dielectric multilayer film which is a wavelength selective transmission / reflection film, reflected 96% of light having a wavelength range of 480 nm or less and transmitted 95% of light having a wavelength of 640 nm.
  • the driving TFT On the active matrix substrate, the driving TFT, the first electrode of the red light emitting organic EL element, the first electrode of the green light emitting organic EL element, the blue light emitting organic EL element, penetrating the planarizing layer and the wavelength selective transmission / reflection film Contact holes for electrically connecting the first electrodes were provided.
  • a first electrode (anode) of each pixel is formed by sputtering for electrical connection to a contact hole provided through a planarization layer connected to a TFT for driving each light emitting pixel. It was done.
  • the first electrode was formed of IZO (indium oxide-zinc oxide) with a thickness of 150 nm.
  • the first electrode was patterned into a shape corresponding to each pixel by a conventional photolithography method.
  • the area of the first electrode is 300 ⁇ m ⁇ 160 ⁇ m.
  • the display unit formed on a 100 mm ⁇ 100 mm square substrate is 80 mm ⁇ 80 mm, and 2 mm wide sealing areas are provided on the top, bottom, left and right of the display unit, and further sealing is provided on the short side.
  • a 2 mm terminal lead-out portion is provided outside the area.
  • On the long side a 2 mm terminal extraction part is provided on the side to be bent.
  • the edge cover is made to have a structure in which four sides are covered with SiO 2 by 10 ⁇ m from the end of the first electrode.
  • the active substrate was cleaned. As cleaning of the active substrate, acetone and IPA were used for ultrasonic cleaning for 10 minutes, and then UV-ozone cleaning was performed for 30 minutes.
  • this substrate was fixed to a substrate holder in an in-line type resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less.
  • Each organic layer was formed.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine is used as a hole transport material.
  • a hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III ) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec.
  • UH-2 1,4-bis-triphenylsilyl-benzene
  • FIrpic picolinate iridium
  • a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a semitransparent electrode was formed as the second electrode.
  • the substrate was fixed to a metal deposition chamber.
  • the shadow mask for forming the second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 2 mm in a direction opposite to the stripe of the first electrode) and the substrate are aligned.
  • magnesium and silver are formed on the surface of the electron injection layer in a desired pattern by co-evaporation at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ / sec, respectively, by a vacuum evaporation method (thickness: 1 nm) )did.
  • indium-zinc oxide IZO
  • IZO indium-zinc oxide
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method.
  • a red phosphor layer and a green phosphor layer were formed on a 0.7 mm glass substrate to produce a phosphor substrate.
  • a second reflective film made of silver was formed to a thickness of 200 nm on the substrate.
  • a low reflection layer on a trapezoid made of chromium was formed with a width of 20 ⁇ m, a film thickness of 500 nm and a pitch of 200 ⁇ m.
  • red phosphor layer In the formation of the red phosphor layer, first, 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane were added to 0.16 g of aerosil having an average particle diameter of 5 nm, and the mixture was stirred at room temperature for 1 hour. This mixture and 20 g of red phosphor K 5 Eu 2.5 (WO 4 ) 6.25 were transferred to a mortar and mixed well, then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours to modify the surface. K 5 Eu 2.5 (WO 4 ) 6.25 was obtained.
  • the green phosphor layer was formed by adding 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane to 0.16 g of aerosil having an average particle diameter of 5 nm and stirring for 1 hour at an open system room temperature.
  • This mixture and 20 g of green phosphor Ba 2 SiO 4 : Eu 2+ were transferred to a mortar and mixed well, and then heated in a 70 ° C. oven for 2 hours and further in a 120 ° C. oven for 2 hours to modify the surface.
  • Ba 2 SiO 4 : Eu 2+ was obtained.
  • the active drive type organic EL element substrate and the phosphor substrate produced as described above were aligned using an alignment marker formed outside the display unit.
  • the thermosetting resin was previously apply
  • the above bonding step was performed in a dry air environment (water content: ⁇ 80 ° C.) for the purpose of preventing deterioration of the organic EL due to water.
  • a polarizing plate was bonded to the substrate in the light extraction direction to complete an active drive type organic EL.
  • the terminal formed on the short side is connected to the power supply circuit via the source driver
  • the terminal formed on the long side is connected to the external power supply via the gate driver
  • an 80 mm ⁇ 80 mm display unit is formed.
  • An active drive organic EL display is completed.
  • the blue light emitting organic EL is used as an excitation light source that can be arbitrarily switched, and the red phosphor layer and the green phosphor layer emit light from blue light to red and green, respectively. It is possible to obtain isotropic emission of red and green by conversion, and through the blue scattering layer, it is possible to obtain isotropic blue emission, enabling full color display, good image, and viewing angle. An image with good characteristics could be obtained.
  • High-efficiency (high luminance) light-emitting devices, display devices, and electronic devices can be provided.
  • SYMBOLS 10 Light-emitting device, 11 ... Substrate, 12 ... Wavelength selective transmission reflective film, 13 ... Excitation light source element, 14 ... Sealing layer, 15 ... Adhesive layer, 16 ... Phosphor layer, 17 ... Sealing substrate, 19 ... Reflective layer .

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Abstract

L'invention porte sur un dispositif émetteur de lumière, qui comporte, au moins : un substrat ; un élément de source de lumière d'excitation qui émet une lumière d'excitation ; et une couche de matériau fluorescent qui est excitée par ladite lumière d'excitation et qui émet une fluorescence. Ladite fluorescence est émise à l'extérieur du dispositif dans une direction opposée à la direction dans laquelle la lumière d'excitation est incidente sur la couche de matériau fluorescent.
PCT/JP2011/072149 2010-10-06 2011-09-28 Dispositif émetteur de lumière, appareil d'affichage et équipement électronique WO2012046599A1 (fr)

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* Cited by examiner, † Cited by third party
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JP2004139849A (ja) * 2002-10-17 2004-05-13 Fuji Electric Holdings Co Ltd 色変換発光デバイス
JP2004207065A (ja) * 2002-12-25 2004-07-22 Fuji Electric Holdings Co Ltd 色変換発光デバイスおよびその製造方法ならびに該デバイスを用いるディスプレイ
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JP2004139849A (ja) * 2002-10-17 2004-05-13 Fuji Electric Holdings Co Ltd 色変換発光デバイス
JP2004207065A (ja) * 2002-12-25 2004-07-22 Fuji Electric Holdings Co Ltd 色変換発光デバイスおよびその製造方法ならびに該デバイスを用いるディスプレイ
WO2009093426A1 (fr) * 2008-01-21 2009-07-30 Panasonic Corporation Elément électroluminescent et écran
JP2009224245A (ja) * 2008-03-18 2009-10-01 Sony Corp 発光装置および液晶表示装置

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