WO2012043104A1 - Corps de génération de chaleur plan et dispositif de chauffage - Google Patents

Corps de génération de chaleur plan et dispositif de chauffage Download PDF

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Publication number
WO2012043104A1
WO2012043104A1 PCT/JP2011/069258 JP2011069258W WO2012043104A1 WO 2012043104 A1 WO2012043104 A1 WO 2012043104A1 JP 2011069258 W JP2011069258 W JP 2011069258W WO 2012043104 A1 WO2012043104 A1 WO 2012043104A1
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WO
WIPO (PCT)
Prior art keywords
heating element
film
planar heating
glass plate
low emissivity
Prior art date
Application number
PCT/JP2011/069258
Other languages
English (en)
Japanese (ja)
Inventor
隆義 斉藤
Original Assignee
日本電気硝子株式会社
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Filing date
Publication date
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Publication of WO2012043104A1 publication Critical patent/WO2012043104A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/84—Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/014—Heaters using resistive wires or cables not provided for in H05B3/54

Definitions

  • the present invention relates to a sheet heating element and a heating device including the same.
  • a planar heating element is known as a heating element used for the purpose of preventing condensation on a window plate.
  • the following Patent Documents 1 and 2 disclose a planar heating element in which a conductive thin film is formed on a resin film.
  • the planar heating element described in Patent Documents 1 and 2 since the base material is a resin film, the planar heating element described in Patent Documents 1 and 2 is limited to use in a low temperature range and used in a high temperature range. I can't do it.
  • Patent Document 3 discloses a planar heating element in which a transparent conductive film made of ITO or the like is formed on a substrate made of glass or the like.
  • the planar heating element described in Patent Document 3 can be used even in a high temperature range.
  • planar heating element described in Patent Document 3 has a problem that the responsiveness of heating and cooling is low.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide a planar heating element that can be heated to a high temperature and has excellent responsiveness to heating and cooling during voltage application. There is to do.
  • the planar heating element according to the present invention includes a glass plate having a thickness of 200 ⁇ m or less and a transparent conductive film formed on the glass plate.
  • the glass plate has a thickness of 200 ⁇ m or less.
  • the planar heating element according to the present invention is excellent in heating and cooling responsiveness.
  • the planar heating element according to the present invention has flexibility, it can be non-planar.
  • the substrate is a glass plate, the planar heating element according to the present invention can generate heat up to a high temperature range.
  • the “glass plate” includes a crystallized glass plate.
  • the planar heating element further includes an insulating film formed on the transparent conductive film.
  • the insulating film is not particularly limited, but can be formed of, for example, an oxide or nitride of aluminum, silicon, or titanium.
  • the planar heating element is preferably formed on a transparent conductive film, and further includes a low emissivity film having an infrared emissivity lower than that of the glass plate.
  • a transparent conductive film having an infrared emissivity lower than that of the glass plate.
  • infrared rays can be mainly emitted from the glass plate side, and infrared rays can be effectively suppressed from being emitted from the side opposite to the glass plate. Therefore, the glass plate side can be heated to a higher temperature. It is also possible to arrange the planar heating element so that the low emissivity film side is close to a member having low heat resistance.
  • the low emissivity film has the amount of infrared radiation from the glass plate side of the planar heating element from the low emissivity film side. It is preferable to be configured to be at least twice the amount of infrared radiation.
  • the amount of infrared radiation from the low emissivity film side can be adjusted by the thickness, material, etc. of the low emissivity film.
  • the low emissivity film may be a single layer film or a multilayer film, and may further be composed of a gradient film. However, from an economical viewpoint, the low emissivity film is preferably composed of a single layer film.
  • the low emissivity film can be formed of, for example, ITO (Indium Tin Oxide).
  • ITO Indium Tin Oxide
  • the planar heating element according to the present invention preferably has an average light transmittance of 70% or more in a wavelength region of 400 nm to 800 nm.
  • the average transmittance is a transmittance including surface reflection, not a so-called internal transmittance.
  • ITO has a low electromagnetic wave emissivity of about 0.3 (glass is about 0.95)
  • a low emissivity film is formed while maintaining translucency by forming a low emissivity film with ITO. The amount of infrared radiation from the side can be effectively reduced.
  • the low emissivity film is made of a metal or an alloy
  • the low emissivity film is preferably insulated from the transparent conductive film by an insulating film.
  • the heating device according to the present invention includes the planar heating element according to the present invention. For this reason, the heating device according to the present invention has high heating efficiency and is excellent in heating and cooling responsiveness.
  • a heating device has an internal space in which the above-described planar heating element is accommodated, and has a housing in which an opening is formed in the internal space, and the planar heating element faces the opening. It may be arranged like this.
  • the heating device according to the present invention may be one in which a planar heating element is arranged inside a housing in which no opening is formed. In that case, a concave portion is formed, and a casing is constituted by a pair of casing portions to which the respective concave portions are attached and fixed, and the planar heating element is sandwiched by the pair of casing portions. Also good.
  • the casing can be formed of, for example, resin or glass.
  • planar heating element that can be heated to a high temperature and has excellent responsiveness to heating and cooling when a voltage is applied.
  • FIG. 1 is a schematic cross-sectional view of a heating apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of a heating apparatus according to another embodiment of the present invention.
  • the heating device 1 and the planar heating element 11 included in the heating device 1 are merely examples.
  • the present invention is not limited to the heating device 1 and the planar heating element 11.
  • the heating device 1 includes a housing 10 and a planar heating element 11 housed in the housing 10.
  • the constituent material and size of the housing 10 are not particularly limited.
  • the housing 10 can be formed of, for example, glass, metal, alloy, ceramic, resin, or the like.
  • the housing 10 is preferably formed of a translucent resin or translucent glass.
  • a planar heating element 11 is accommodated in the housing 10.
  • the planar heating element 11 includes a glass plate 17, a transparent conductive film 12 formed on the glass plate 17, an insulating film 13 formed on the transparent conductive film 12, and the insulating film 13.
  • membrane 14 currently formed and the pair of electrodes 15 and 16 electrically connected to the transparent conductive film 12 are provided.
  • the planar heating element 11 is disposed in the housing 10 such that the glass plate 17 faces the opening 10a side of the housing 10 and the low emissivity film 14 side faces the bottom wall portion 10b side of the housing 10. .
  • the glass plate 17 faces the opening 10a.
  • the glass plate 17 is a flexible glass plate having a thickness of 200 ⁇ m or less.
  • the planar heating element 11 according to the present embodiment is also flexible.
  • the glass plate 17 is thin, the heat capacity of the glass plate 17 is small. Therefore, the temperature of the planar heating element 11 can be raised or lowered in a short time. Therefore, the heating device 1 is excellent in responsiveness of heating and cooling.
  • the planar heating element 11 since the base material is the glass plate 17, it can generate heat to a high temperature range.
  • the glass plate 17 it is preferable to make the glass plate 17 thinner from the viewpoint of further improving the responsiveness of heating and cooling. However, if the glass plate 17 is too thin, the mechanical durability of the planar heating element 11 is too low. Accordingly, the thickness of the glass plate 17 is preferably 5 ⁇ m or more.
  • the transparent conductive film 12 is formed on the glass plate 17.
  • a voltage is applied to the transparent conductive film 12 via the pair of electrodes 15 and 16
  • infrared rays are emitted from the glass plate 17 side. That is, the transparent conductive film 12 functions as a heat source.
  • the transparent conductive film 12 can be formed of, for example, ITO. However, the material of the transparent conductive film 12 is not limited to ITO.
  • the transparent conductive film 12 can also be composed of, for example, an oxide thin film made of a metal thin film such as gold, silver, or aluminum, antimony-containing tin oxide, fluorine-containing tin oxide (FTO), aluminum-containing zinc oxide, or the like.
  • the thickness of the transparent conductive film 12 can be about 50 nm to 500 nm, for example.
  • the transparent conductive film 12 is made of ITO, if the transparent conductive film 12 is too thick, the average light transmittance in the wavelength region of 400 to 800 nm of the planar heating element 11 may be too low. On the other hand, if the transparent conductive film 12 is too thin, the drive voltage may increase.
  • the planar heating element 11 preferably has an average light transmittance of 70% or more in a wavelength region of 400 nm to 800 nm.
  • the insulating film 13 is formed so as to cover substantially the entire portion of the transparent conductive film 12 excluding the electrode 15 and 16 forming portions.
  • the insulation layer 13 suppresses leakage from the sheet heating element 11.
  • the insulating film 13 can be formed of, for example, an oxide or nitride of aluminum, silicon, or titanium. That is, the insulating film 13 can be formed of, for example, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, titanium oxide, titanium nitride, or the like.
  • the thickness of the insulating film 13 can be about 50 nm to 1000 nm, for example. If the insulating film 13 is too thin, the transparent conductive film 12 may not be reliably insulated. On the other hand, if the insulating film 13 is too thick, the time required to form the insulating film 13 becomes long, and the manufacturing cost of the planar heating element 11 may increase.
  • the low emissivity film 14 is formed on the insulating film 13.
  • the low emissivity film 14 is electrically insulated from the transparent conductive film 12 and the electrode 16 by the insulating film 13.
  • the low emissivity film 14 is a film having an infrared emissivity lower than that of the glass plate 17 and has a function of suppressing the heat generated in the transparent conductive film 12 from being radiated to the low emissivity film 14 side.
  • membrane 14 infrared rays can be mainly radiated
  • the glass plate 17 side of the planar heating element 11 can be heated to a higher temperature. Moreover, it can suppress effectively that the housing
  • the thickness of the low emissivity film 14 is the amount of infrared radiation from the glass plate 17 side. However, it is preferable to be formed in a thickness that is at least twice the amount of infrared radiation from the low emissivity film 14 side. From such a viewpoint, the thickness of the low emissivity film 14 is preferably about 50 nm to 500 nm, for example.
  • the low emissivity film 14 can be formed of, for example, ITO.
  • ITO indium tin oxide
  • the manufacturing cost of the planar heating element 11 can be reduced.
  • the manufacture of the planar heating element 11 becomes easier.
  • ITO indium tin oxide
  • the material of the low emissivity film 14 is not limited to ITO.
  • membrane 14 can also be formed, for example with metals and alloys, such as gold
  • membrane 14, the insulating film 13, and the transparent conductive film 12 is not specifically limited.
  • membrane 14, the insulating film 13, and the transparent conductive film 12 can be formed by sputtering method, CVD method, etc., for example.
  • the pair of electrodes 15 and 16 are formed on the transparent conductive film 12.
  • the electrodes 15 and 16 can be made of, for example, a metal such as aluminum, chromium, molybdenum, silver, or copper, or an alloy.
  • the electrodes 15 and 16 are preferably formed on both sides of the transparent conductive film 12.
  • the electrodes 15 and 16 can be formed, for example, by sputtering, vapor deposition, application of conductive paste, soldering, or the like. Especially, it is preferable to form the electrodes 15 and 16 by sputtering method. By doing so, the adhesion strength between the electrodes 15 and 16 and the transparent conductive film 12 can be increased.
  • Example 1 A planar heating element was produced by forming a transparent conductive film made of ITO having a thickness of 150 nm on a glass plate having a thickness of 150 mm ⁇ 250 mm and a thickness of 70 ⁇ m by a sputtering method.
  • Example 1 A planar heating element was produced in the same manner as in Example 1 except that the thickness of the glass plate was 400 ⁇ m. 70 W of electric power was supplied to the planar heating element, and the time required for the temperature at the center of the glass substrate to reach 100 ° C. from room temperature (24 ° C.) was measured. Thereafter, the supply of power was stopped, and the time required for the temperature at the center of the glass substrate to drop from 100 ° C. to 30 ° C. was measured. The results are shown in Table 1 below.
  • Example 2 From a transparent conductive film 12 made of an ITO film having a thickness of 150 nm, an insulating film 13 made of a SiO 2 film having a thickness of 50 nm, and an Al having a thickness of 100 nm on a glass plate 17 having a thickness of 150 mm ⁇ 250 mm and a thickness of 70 ⁇ m.
  • membrane 14 which becomes this was formed in order by sputtering method, and the planar heating element 11 was produced.
  • the temperatures of the glass plate 17 side and the low emissivity film 14 side when 70 W of power was supplied to the transparent conductive film 12 of the produced planar heating element 11 for 1 minute were measured.
  • the temperature on the glass plate 17 side was 104 ° C.
  • the temperature on the low emissivity film 14 side was 30 ° C.
  • Example 3 A planar heating element was produced in the same manner as in Example 2 except that the low emissivity film 14 was not formed.
  • the temperatures of the glass plate 17 side and the low emissivity film 14 side when 70 W of power was supplied to the transparent conductive film 12 of the produced planar heating element 11 for 1 minute were measured.
  • the temperature on the glass plate 17 side was 104 ° C.
  • the temperature on the low emissivity film 14 side was 43 ° C.
  • FIG. 2 is a schematic cross-sectional view of a heating apparatus according to another embodiment of the present invention.
  • the heating device 2 according to the present embodiment is a surface made of a glass plate 17 on which a transparent conductive film 12 and electrodes 15 and 16 are formed.
  • a heating element 11 is provided.
  • the housing 10 that houses the planar heating element is composed of two resin films 19a and 19b that are joined together by fusing the edge portions. That is, in the heating device 2, the planar heating element 11 is resin-laminated.
  • the housing 10 in addition to the planar heating element 11, also has flexibility. Therefore, the heating device 2 has flexibility and can be used in a curved shape as necessary, for example, in a state of being deformed into a substantially cylindrical shape. Therefore, by using the heating device 2, for example, a non-planar object to be heated can be efficiently heated.
  • the surface of the glass plate 17 is not easily damaged.
  • the resin films 19a and 19b are not particularly limited as long as they are made of heat-resistant resin.
  • the resin films 19a and 19b can be formed of, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN) polysulfone, polyphenylene terephthalate, polyimide, polycarbonate, cellulose ester resin, polyamide, or the like.

Landscapes

  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)

Abstract

L'invention porte sur un corps de génération de chaleur plan, dont la température peut être élevée à une valeur élevée et qui a une excellente réponse vis-à-vis d'une élévation de température par l'application d'une tension et vis-à-vis d'une chute de température. Un corps de génération de chaleur plan (11) comprend : une plaque de verre (17) ayant une épaisseur de 200 µm ou moins ; et un film électroconducteur transparent (12) formé sur la plaque de verre (17).
PCT/JP2011/069258 2010-09-30 2011-08-26 Corps de génération de chaleur plan et dispositif de chauffage WO2012043104A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010220204A JP2012074325A (ja) 2010-09-30 2010-09-30 面状発熱体及び加熱装置
JP2010-220204 2010-09-30

Publications (1)

Publication Number Publication Date
WO2012043104A1 true WO2012043104A1 (fr) 2012-04-05

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JP (1) JP2012074325A (fr)
TW (1) TW201218847A (fr)
WO (1) WO2012043104A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104048986A (zh) * 2014-06-26 2014-09-17 哈尔滨工程大学 Plif-piv可视化池式沸腾实验装置加热器
EP3996468A4 (fr) * 2019-07-04 2023-07-19 Lintec Corporation Dispositif de chauffage à chaleur rayonnante

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021132009A (ja) * 2020-02-21 2021-09-09 リンテック株式会社 シート状ヒーター

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214184A (ja) * 1983-05-18 1984-12-04 株式会社日本自動車部品総合研究所 デフロスタ用ヒ−タ
JP2008159534A (ja) * 2006-12-26 2008-07-10 Nippon Electric Glass Co Ltd 導電性フリット材、透明面状ヒーター及び電磁波シールド体
JP2009201509A (ja) * 2008-02-01 2009-09-10 Kunio Isono 透明導電膜加工からなる培養容器とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214184A (ja) * 1983-05-18 1984-12-04 株式会社日本自動車部品総合研究所 デフロスタ用ヒ−タ
JP2008159534A (ja) * 2006-12-26 2008-07-10 Nippon Electric Glass Co Ltd 導電性フリット材、透明面状ヒーター及び電磁波シールド体
JP2009201509A (ja) * 2008-02-01 2009-09-10 Kunio Isono 透明導電膜加工からなる培養容器とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104048986A (zh) * 2014-06-26 2014-09-17 哈尔滨工程大学 Plif-piv可视化池式沸腾实验装置加热器
EP3996468A4 (fr) * 2019-07-04 2023-07-19 Lintec Corporation Dispositif de chauffage à chaleur rayonnante

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JP2012074325A (ja) 2012-04-12
TW201218847A (en) 2012-05-01

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