WO2012041983A1 - Élément réflecteur, composant optoélectronique et procédé de fabrication d'un élément réflecteur et d'un composant optoélectronique - Google Patents

Élément réflecteur, composant optoélectronique et procédé de fabrication d'un élément réflecteur et d'un composant optoélectronique Download PDF

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Publication number
WO2012041983A1
WO2012041983A1 PCT/EP2011/067031 EP2011067031W WO2012041983A1 WO 2012041983 A1 WO2012041983 A1 WO 2012041983A1 EP 2011067031 W EP2011067031 W EP 2011067031W WO 2012041983 A1 WO2012041983 A1 WO 2012041983A1
Authority
WO
WIPO (PCT)
Prior art keywords
reflector
main surface
reflector element
composite
recess
Prior art date
Application number
PCT/EP2011/067031
Other languages
German (de)
English (en)
Inventor
Michael Binder
Stephan Preuss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2012041983A1 publication Critical patent/WO2012041983A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Definitions

  • Reflector element optoelectronic component and method for producing a reflector element and a
  • Reflector element and an optoelectronic device specified.
  • LEDs For producing light-emitting diodes (LEDs), which have a light-emitting diode chip surrounded by a reflector, there are various approaches. For example, in so-called premold packages using injection molding technology, individual PPA cavities are placed on a metallic carrier
  • ESD chips ESD chips
  • Reflectors is the placement of the electronic components and a separation into individual components.
  • QFN quad flat no-lead
  • a metallic carrier strip is placed in front of the
  • thermoplastics such as
  • Polyphtalamide (PPA) or polyphenylene sulfide (PPS) used.
  • LED chip can be mounted.
  • At least one object of certain embodiments is to specify a reflector element. At least one more
  • the object is to provide an optoelectronic component with a reflector element.
  • Other objects of at least some embodiments are to provide methods for
  • Reflector element has a first major surface and a second major surface, wherein the first and the second
  • the reflector element has a reflector opening which extends from the first main surface to the second main surface through the reflector element.
  • the reflector opening can thus be formed as projecting through the reflector element through opening, which is surrounded by the reflector element forming material.
  • the reflector element is here
  • Optoelectronic semiconductor chip formed, in particular for a radiation-emitting or radiation-receiving semiconductor chip.
  • the reflector element is designed such that the semiconductor chip is preferably arranged in the reflector opening on the second main surface, so that
  • Semiconductor chip light is emitted in the direction of the first main surface.
  • the semiconductor chip light is emitted in the direction of the first main surface.
  • Reflector opening has a cross section which increases from the second to the first main surface.
  • cross-section can be round in the first and / or the second main surface, for example circular or
  • the reflector opening may have a cross section that transitions from a first shape on the second main surface to a different second shape in the first main surface.
  • the reflector surface that is, the surface of the reflector opening, so that surface of the
  • Reflector element which connects the first main surface with the second main surface in the reflector opening, be provided with a reflective coating.
  • the reflective coating may preferably be formed by a reflective metallization, such as silver, aluminum or an alloy with silver or with aluminum or with silver and aluminum.
  • At least one depression can be arranged in the second main surface.
  • the depression is here
  • Reflector element protrudes.
  • the at least one recess in the second main surface is arranged at a distance from the first main surface.
  • the at least one recess is therefore preferably in the form of a blind hole, a gutter, a recess or a
  • the at least one recess opens into the reflector opening. That can
  • Such a depression, which opens into the reflector opening may in particular be suitable for arranging, for example, an electrical connection element, such as a bonding wire, for contacting an optoelectronic semiconductor chip, which is arranged in the reflector opening.
  • the at least one recess is arranged separately from the reflector opening. This may mean in particular that there is no direct connection between the reflector opening and the at least one
  • Depression through the reflector element passes therethrough.
  • a depression which is arranged separately from the reflector opening, may be suitable, for example, for an electrical component, such as a
  • ESD protection diode and / or an electrical connection element such as a bonding wire for contacting the electrical component are arranged.
  • a plurality of depressions are arranged in the second main surface.
  • the depressions of the plurality of depressions can be arranged symmetrically, that is to say, for example, axially symmetrically with respect to an axis of symmetry along the second main surface, or point-symmetrically with respect to a center of the second main surface.
  • the center of the second main surface may preferably also be the center of the reflector opening at the same time. Due to the symmetrical, particularly preferably the point-symmetrical arrangement of the plurality of depressions, it may be possible to that the reflector element which can be mounted, for example, in a specific orientation on a carrier element, in a 180 ° about an axis of rotation through the
  • thermoset particularly preferably by a thermoset
  • Plastic with an epoxy are formed.
  • the reflector element described here can advantageously have a higher temperature stability.
  • Optoelectronic component a reflector element according to one or more of the aforementioned imple mentation forms on. Furthermore, the optoelectronic component has a
  • the carrier element can be, for example, a plastic or ceramic carrier with electrical conductor tracks.
  • the carrier element as a printed circuit board, for example in the form of a so-called Printed Circuit Board (PCB) or a so-called Metal Core Printed
  • the carrier element can be designed, for example, as a so-called FR4 printed circuit board. Furthermore, the carrier element can also be used as a ceramic substrate with conductor tracks and / or electrical Be made through contacts. In addition, the carrier material may also comprise composite materials, for example of copper and epoxy.
  • the carrier element is particularly suitable, a
  • the optoelectronic semiconductor chip can be mounted on the support member and electrically connected.
  • the optoelectronic semiconductor chip can be mounted, for example, on a mounting region designed as an electrical contact region.
  • the support member also next to the mounting area a
  • the carrier element can have further assembly ⁇ or contact areas on which
  • electrical components such as one or more ESD protection diodes or other discrete components, such as resistors, capacitors, transistors and / or IC chips can be arranged.
  • the reflector element can in particular with the second
  • Main surface to be arranged on the support element Main surface to be arranged on the support element.
  • the reflector element for example, on the
  • Carrier element glued or laminated.
  • an optoelectronic semiconductor chip can be arranged on the carrier element in the reflector opening.
  • the optoelectronic semiconductor chip may in particular be suitable for emitting or receiving light. Is the
  • Optoelectronic semiconductor chip designed as a radiation- or light-emitting semiconductor chip he can particularly preferably emit light having a wavelength from the ultraviolet to infrared wavelength range, and more preferably in a visible wavelength range.
  • the optoelectronic semiconductor chip can be based, for example, on an arsenide, a phosphide or a nitride compound semiconductor material and as an epitaxially grown semiconductor layer sequence with an active region,
  • a pn junction for example, a pn junction or a
  • Quantum well structure be formed.
  • At least one recess of the reflector element which is arranged by the arrangement of the reflector element with the second main surface on the support element facing the support element, may be particularly advantageous an electrical connection element, such as a bonding wire or an electrical conductor, or an electrical component, for example one of the above-mentioned components,
  • an ESD protection diode for example, an ESD protection diode, as well as an electrical connection element, such as a
  • This can be covered by the reflector body with particular advantage optically not relevant components, which may result, for example, additional design options for the optoelectronic device.
  • the reflector opening on the first main surface and also in its course to the second main surface independently or largely independent be formed by the arrangement of optically not relevant components on the support element.
  • the at least one recess may be larger than a space requirement for the electrical component and / or the electrical connection element, which is arranged in the at least one recess. This may in particular mean that the walls of the recess are spaced from the support element and form such a large cavity that a flexible use of the reflector element may be independent of the size and / or the course or extension of the components to be arranged in the recess.
  • Cross-section which substantially corresponds to the cross section of the optoelectronic semiconductor chip. This may in particular mean that the cross section of
  • Reflector aperture in the second major surface is only slightly larger than the cross section of the optoelectronic
  • the cross-section of the reflector opening in the second main surface may be greater than the cross-sectional area of the semiconductor chip by a value of less than or equal to 20% and particularly preferably by a value of less than or equal to 10%. This can be ensured, for example, that at least almost the entire of
  • Optoelectronic semiconductor chip radiated or to be received light directly through the reflector opening or at least over the walls of the reflector opening can be irradiated or radiated, so that losses, for example can be avoided by absorption on the surface of the support element.
  • a method for producing a reflector element has a method step in which the reflector element, together with a plurality of further reflector elements in the form of a reflector
  • Reflector element composite is produced.
  • Reflector elements in a continuous form for example in a matrix-like arrangement, have.
  • a cost-efficient production of a multiplicity of reflector elements can be possible with advantage.
  • the reflector element composite can be produced by means of a molding process.
  • a molding tool can be provided in a method step, which has a negative form of the reflector element composite.
  • the reflector element composite can be separated into individual reflector elements.
  • Singling can, for example, in another
  • the molding tool may, for example, have a lower part and an upper part.
  • the lower part can be designed as a structured auxiliary substrate that corresponds to a negative mold of a plurality or a matrix arrangement of the second main surfaces of a plurality of reflector elements.
  • the lower part of a negative form of each having at least one recess and at least a portion of the respective reflector opening.
  • the upper part may be a negative mold of a plurality
  • the geometry of the reflector opening can be determined by the shape of the upper part or at least partially by the shape of the lower part.
  • the molding compound may comprise an epoxide and the molding process may be transfer molding. This can be a cost-effective production of a variety of
  • Reflector openings are provided with a reflective coating, such as a metallization.
  • a reflective coating such as a metallization.
  • optoelectronic semiconductor chip can be selected. Influences of the coating process, for example on the Optoelectronic semiconductor chip or the carrier element can thus be excluded with advantage. Due to the reflective coating, the reflective
  • a method for producing an optoelectronic component has at least some of the previously mentioned method steps and features of the method for producing a reflector element.
  • the reflector element composite can be applied prior to singulation on a carrier element composite, whereby a mounting assembly can be formed.
  • Carrier element composite can for example be formed from a plurality of contiguous support elements, which correspond to the arrangement of the contiguous
  • Reflektorelementverbunds on the carrier element composite can on the individual carrier elements of the carrier element composite optoelectronic semiconductor chips and optionally
  • electrical components such as ESD protection diodes or other electrical components, and / or electrical
  • Connecting elements such as bonding wires for electrical
  • connection of the optoelectronic semiconductor chips to the respective carrier element can be arranged.
  • the assembly of the reflector element composite on the carrier element composite can thereby be significantly cheaper to carry out as a single assembly of reflector elements on individual
  • Carrier elements The arrangement and mounting of the reflector element composite on the carrier element composite can be done in particular by gluing or laminating.
  • the reflector element composite in the form of an epoxy-based reflector element array subsequently produced on a
  • Carrier element composite is applied.
  • the carrier element composite can advantageously be used with it before joining with the reflector element composite
  • Optoelectronic semiconductor chips particularly preferably light-emitting semiconductor chips, be equipped.
  • the reflector elements optically inactive elements of the respective optoelectronic
  • Components are integrated in the reflector element or between the reflector element and the support element in order not to be visible to the outside.
  • Reflector element as well as the carrier element with respect to the respective other element independent materials are selected. This can be the one described here
  • Reflector element with a variety of materials and From embodiments of carrier elements, as described above, combined. Furthermore, the
  • Design of the reflector element for example, the tie of the reflector opening, be selected independently of the placement of the support element.
  • Reflector element for example, also have a reflector opening with such a depth, which in a
  • Figures 1A and 1B are schematic representations of a
  • FIGS. 2A and 2B are schematic representations of
  • Figure 3 is a schematic representation of a
  • Embodiment and Figures 4A and 4B are schematic representations of an optoelectronic device according to another
  • FIGS. 1A and 1B show an exemplary embodiment of a reflector element 100.
  • the reflector element 100 is made of a plastic with an epoxy by means of a molding process.
  • the reflector element 100 has a first main surface 101 and a second main surface 102 which face each other. From the first main surface 101 to the second main surface 102, a reflector opening 10 protrudes through the reflector element 100. Im shown
  • the reflector opening 10 in the second main surface 102 has a square shape with rounded corners and changes into an octagonal shape in the first main surface 101.
  • Reflector opening 10 is to be understood purely by way of example. Alternatively, the reflector opening 10 in the first and / or the second main surface 101, 102 or in the Course from the first to the second main surface 101, 102 other forms described above in the general part
  • Main surface 102 purely by way of example a plurality of
  • Main surface 101 are spaced and thus do not protrude through the reflector element 100 therethrough.
  • Reflector opening 10 are spaced apart and formed separately. Furthermore, the reflector element 100 recesses 11 ', which open into the reflector opening 10. At least one of the recesses 11 ', which open into the reflector opening 10, is provided in particular for the fact that therein
  • the reflector element 100 is at a 180 ° rotation about an axis perpendicular to the second main surface 102 and through the center of the second main surface 102 with itself congruent.
  • a mold 9 is provided which forms a negative mold of a reflector element composite 91.
  • FIGS. 2A and 2B only one lower part of the molding tool 9 is shown shown having a negative mold of the second main surface 102 with the recesses 11, 11 'and a part of the
  • FIG. 2B shows a section of a section through the lower part of the molding tool 9 and a reflector element assembly 91 already formed thereon.
  • the shape of the reflector opening 10 and the first main surface 101 is formed by a corresponding upper part of the molding tool 9 (not shown).
  • a suitable molding compound which has an epoxide in the exemplary embodiment shown, is introduced into the mold 9 by means of a transfer molding process and cured therein.
  • the mold 9 has corresponding feeds for the molding compound or starting products of the molding compound, which are not shown for clarity.
  • Reflector elements 100 made, which are interconnected along indicated by the dashed lines separating lines.
  • Reflector element composite 91 the mold 9 can be removed and the reflector element composite 91 can be singulated into individual reflector elements 100.
  • a carrier element composite 92 are provided in addition to the reflector element composite 91.
  • the carrier element composite 92 in this case has a multiplicity of carrier elements 20 which are connected to one another by dicing lines indicated by dashed lines.
  • the carrier element composite 92 is provided with optoelectronic
  • the reflector element composite 91 and the carrier element composite 92 are assembled into a composite assembly.
  • the reflector element composite 91 is glued or laminated onto the carrier element composite 92.
  • Recesses 11, 11 'and the reflector opening 10 of the individual reflector elements 100 of the reflector element assembly 91 are arranged such that they can be arranged in each case via the electrical connection elements, the electrical components 2 and the optoelectronic semiconductor chips 1. Subsequently, the assembly composite along the separating lines in
  • the optoelectronic semiconductor chips 1 here and in the following embodiment are as light
  • some or all Semiconductor chips 1 may also be designed as light-receiving semiconductor chips, so that some or all completed semiconductor devices 200 form photodiodes, for example.
  • some or all completed semiconductor devices 200 form photodiodes, for example.
  • Semiconductor chips 1 are arranged.
  • FIGS. 4A and 4B show an exemplary embodiment of a completed, isolated optoelectronic one
  • Semiconductor device 200 is shown in an oblique view in Figure 4A and in a sectional view in Figure 4B along the section plane BB indicated in Figure 4A.
  • the reflector element 100 is shown transparently in FIG. 4A in order to make the underlying components visible on the carrier element 20.
  • the depressions 11 and 11 ' have dimensions which are greater than the space requirement of the electrical connection elements 3, which are formed by bonding wires in the exemplary embodiment shown, and of the electrical component 2 which is produced by the ESD Protective diode is formed. It combines a
  • electrical connection element 3 connects a further electrical contact surface on the carrier element 20 with the electrical component 2.
  • the reflector element 100 also has in the second
  • Main surface 102 a cross section of the reflector opening 10th which is essentially the cross section of the
  • Optoelectronic semiconductor chip 1 corresponds, so that the surface of the support member 20 in areas adjacent to the
  • Semiconductor chip 1 is almost completely covered by the reflector element 100. This allows the optoelectronic
  • Coating such as a metallization
  • Components are covered by the respective reflector element 100.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un élément réflecteur (100) ayant une première surface principale (101) et une deuxième surface principale (102) opposée à la première surface principale (101) et une ouverture (10) de réflecteur qui va de la première surface principale (101) à la deuxième surface principale (102), au moins une dépression (11, 11') qui est espacée de la première surface principale (101) étant disposée dans la deuxième surface principale (102). L'invention concerne également un composant optoélectronique (200) pourvu d'un élément réflecteur (100). L'invention concerne également un procédé de fabrication d'un élément réflecteur (100) et d'un composant optoélectronique (200).
PCT/EP2011/067031 2010-10-01 2011-09-29 Élément réflecteur, composant optoélectronique et procédé de fabrication d'un élément réflecteur et d'un composant optoélectronique WO2012041983A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010047303.0 2010-10-01
DE102010047303A DE102010047303A1 (de) 2010-10-01 2010-10-01 Reflektorelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines Reflektorelements und eines optoelektronischen Bauelements

Publications (1)

Publication Number Publication Date
WO2012041983A1 true WO2012041983A1 (fr) 2012-04-05

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PCT/EP2011/067031 WO2012041983A1 (fr) 2010-10-01 2011-09-29 Élément réflecteur, composant optoélectronique et procédé de fabrication d'un élément réflecteur et d'un composant optoélectronique

Country Status (3)

Country Link
DE (1) DE102010047303A1 (fr)
TW (1) TW201228047A (fr)
WO (1) WO2012041983A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004046995A1 (de) * 2003-09-30 2005-06-09 Citizen Electronics Co., Ltd., Fujiyoshida Lichtemittierende Diode
US20070269927A1 (en) * 2003-02-28 2007-11-22 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
DE102007001706A1 (de) * 2007-01-11 2008-07-17 Osram Opto Semiconductors Gmbh Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse
DE102008016176A1 (de) * 2008-01-25 2009-07-30 Alti-electronics Co., Ltd., Yongin LED-Packung des Seitenbeleuchtungstyps
US20100067240A1 (en) * 2008-09-16 2010-03-18 John Selverian Optical Cup For Lighting Module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4744178B2 (ja) * 2005-04-08 2011-08-10 シャープ株式会社 発光ダイオード
WO2009075530A2 (fr) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semi-conducteur et son procédé de fabrication
DE102008048846A1 (de) * 2008-09-25 2010-04-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070269927A1 (en) * 2003-02-28 2007-11-22 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
DE102004046995A1 (de) * 2003-09-30 2005-06-09 Citizen Electronics Co., Ltd., Fujiyoshida Lichtemittierende Diode
DE102007001706A1 (de) * 2007-01-11 2008-07-17 Osram Opto Semiconductors Gmbh Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse
DE102008016176A1 (de) * 2008-01-25 2009-07-30 Alti-electronics Co., Ltd., Yongin LED-Packung des Seitenbeleuchtungstyps
US20100067240A1 (en) * 2008-09-16 2010-03-18 John Selverian Optical Cup For Lighting Module

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Publication number Publication date
DE102010047303A1 (de) 2012-04-05
TW201228047A (en) 2012-07-01

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