WO2012039332A1 - Dispositif de diode en parallèle ainsi que procédé d'examen de celui-ci, et procédé de fabrication de dispositif de diode en film - Google Patents

Dispositif de diode en parallèle ainsi que procédé d'examen de celui-ci, et procédé de fabrication de dispositif de diode en film Download PDF

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Publication number
WO2012039332A1
WO2012039332A1 PCT/JP2011/070966 JP2011070966W WO2012039332A1 WO 2012039332 A1 WO2012039332 A1 WO 2012039332A1 JP 2011070966 W JP2011070966 W JP 2011070966W WO 2012039332 A1 WO2012039332 A1 WO 2012039332A1
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WIPO (PCT)
Prior art keywords
layer
diode device
bypass diode
film
electrode layer
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PCT/JP2011/070966
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English (en)
Japanese (ja)
Inventor
雄二 八木橋
路夫 佐藤
Original Assignee
三洋電機株式会社
三洋アモルトン株式会社
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Priority claimed from JP2010214298A external-priority patent/JP2013251286A/ja
Priority claimed from JP2010214299A external-priority patent/JP2013251287A/ja
Priority claimed from JP2010214300A external-priority patent/JP2013251288A/ja
Application filed by 三洋電機株式会社, 三洋アモルトン株式会社 filed Critical 三洋電機株式会社
Publication of WO2012039332A1 publication Critical patent/WO2012039332A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a bypass diode device in which a plurality of diodes are arranged on the upper surface of a support substrate, an inspection method thereof, and a method for manufacturing a film diode device in which a plurality of diodes are arranged on the upper surface of a film substrate.
  • the solar cell module 31 has a plurality of solar cells 32 connected in series, and output electrodes (not shown) are connected to both ends of the solar cells connected in series. Power is taken from the output electrode.
  • the terminal box 33 has external connection cables 34 and 35, and connectors 36 and 37 are connected to the tips of the external connection cables 34 and 35.
  • the terminal box 33 connected to each photovoltaic cell 32 is electrically connected via connectors 36 and 37.
  • the terminal box 33 is arrange
  • an N-type external connection terminal plate 39, intermediate terminal plates 40 and 41, and a P-type partial connection terminal plate 42 are arranged in the casing 38 of the terminal box 33.
  • the output electrode 43 of the solar battery cell 32 is connected to the terminal plates 39 to 42, and external connection cables 34 and 35 are connected to the ends of the external connection terminals 39 and 42, respectively.
  • two diodes 44 are connected between the N-type external connection terminal plate 39 and the intermediate terminal plate 40, and two diodes 45 are connected between the intermediate terminal plates 40, 41,
  • Two diodes 46 are also connected between the terminal plate 41 and the P-type external connection terminal plate 42 (see, for example, Patent Document 1).
  • a terminal box 33 in which a bypass diode device is configured is connected to each individual solar cell 32. Is done. With this structure, the same number of terminal boxes 33 as the solar cells 32 are required, and the terminal boxes 33 are individually manufactured. Therefore, there is a problem that it is difficult to reduce the manufacturing cost of the terminal boxes 33. Furthermore, since the terminal box 33 needs to be individually installed for each solar battery cell 32, there is a problem that the installation work time is difficult to be shortened and the work cost is difficult to reduce.
  • the terminal box 33 is installed on the back surface side of the solar battery cell 32, so that the terminal box 33 protrudes from the back surface of the solar battery cell 32.
  • the projecting terminal box 33 becomes an obstacle and the workability deteriorates.
  • the terminal box 33 is caught by an operator or a work tool during installation work of the solar battery module 31 and detached from the solar battery cell 32.
  • the external connection cables 34 and 35 that electrically connect the terminal boxes 33 to each other are exposed to the outside of the solar cell module 31, so that the external connection cables 34 and 35 are disconnected or disconnected during the installation work or the like. There is a problem.
  • bypass diode device in order to form a thinner bypass diode device, it was also considered to integrate a thin film solar cell and a bypass diode.
  • a transparent substrate 51 is prepared, and a transparent electrode 52 is formed on the upper surface of the transparent substrate 51.
  • a groove 53 is formed in the transparent electrode 52 by a laser scribing method, and the transparent electrode 52 is divided into cells.
  • a photoelectric conversion layer 54 is formed on the transparent substrate 51 so as to cover the transparent electrode 52.
  • the photoelectric conversion layer 54 for example, a semiconductor layer made of a silicon material is used, and the inside of the groove 53 that partitions the transparent electrode 52 is also buried.
  • a groove 55 is formed in the photoelectric conversion layer 54 by a laser scribing method, and the photoelectric conversion layer 54 is divided into cells. Then, a first back electrode 56 is formed on the transparent substrate 51 so as to cover the photoelectric conversion layer 54, and the first back electrode 56 is also embedded in the groove 55 that partitions the photoelectric conversion layer 54.
  • a groove 57 is formed in the first back electrode 56 and the photoelectric conversion layer 54 by, for example, a laser scribing method, and the thin film solar cell 58 formed on the transparent substrate 51 is formed into a cell. Divide into each.
  • a thin film diode 59 is formed on the transparent substrate 51 so as to cover the thin film solar cell 58.
  • the thin film diode is formed of a PN junction diode, and is embedded in the groove 57 that separates the thin film solar cell 58.
  • the groove 60 is formed in the thin film diode 59 by, for example, a laser scribing method, and the thin film diode 59 is divided so as to correspond to the cells of the individual thin film solar cells 58. .
  • a second back electrode 61 is formed on the transparent substrate 51 so as to cover the thin film diode 59, and the second back electrode 61 is also embedded in the groove 60 that separates the thin film diode 59.
  • a groove 62 is formed in the second back electrode 61 by, for example, a laser scribing method, and the bypass diode 63 is divided so as to correspond to each thin film solar cell 58.
  • a groove 62 is formed in the second back electrode 61 by, for example, a laser scribing method, and the bypass diode 63 is divided so as to correspond to each thin film solar cell 58.
  • the thin film solar cell 58 and the bypass diode 63 are laminated and formed integrally on the upper surface of the same transparent substrate 51.
  • the bypass diode 63 is arrange
  • the thin film solar cell 58 and the bypass diode 63 are formed as an integrated type, when one of them fails during use, it is necessary to replace the entire device, which causes a cost problem.
  • bypass diode device of the present invention a support substrate, a plurality of diodes formed on the support substrate, and a light-shielding resin that covers the plurality of diodes and is formed on the support substrate And a plurality of terminal connection portions that are exposed from the resin layer and electrically connected to the diodes, and each of the diodes is disposed between the terminal connection portions, and at least the terminal connection
  • the diodes are connected in series along the arrangement direction of the parts.
  • a support substrate a first electrode layer formed on the support substrate, a first electrode layer covering the first electrode layer, formed on the support substrate, and a diode A semiconductor layer having a junction region functioning as a second electrode layer formed on the semiconductor layer, at least part of which faces the first electrode layer, the first electrode layer, and the semiconductor layer And a slit opening the second electrode layer, a first conductive resin layer embedded in the slit and formed on the second electrode layer, and a light-shielding resin formed on the semiconductor layer And a terminal connection portion that is electrically connected to the second electrode layer through an opening region of the light shielding resin layer, the second electrode layer is made of a transparent metal material,
  • the first conductive resin layer formed on the two electrode layers A main electrode portion disposed below the terminal connecting portion, characterized in that it consists of the branch electrode section extending in a comb-like from the main electrode portion.
  • the first conductive resin layer is formed, and before the light-shielding resin layer is formed, the first conductive resin layer is provided with a measuring device.
  • the characteristics of the semiconductor layer are measured by applying a measurement terminal and irradiating the semiconductor layer with measurement light from above the first conductive resin layer.
  • an auxiliary substrate is prepared, and the auxiliary substrate is provided.
  • the bypass diode device (film diode device) is formed separately from the photovoltaic device, and a plurality of diodes connected in series are formed in the bypass diode device (film diode device). The handleability of the (film diode device) is improved.
  • the terminal connection portion of the bypass diode device (film diode device) is arranged with high positional accuracy with respect to the cell of the photovoltaic device, and the diode is installed to a plurality of cells in one installation operation.
  • the installation work time is greatly reduced.
  • the support substrate is formed using a film material, so that the thin film of the bypass diode device (film diode device) is realized, and the attachment property of the bypass diode device (film diode device) of the photovoltaic device is improved. And the flatness of the mounting surface is realized.
  • the slit is prevented from reaching the support substrate by disposing the conductive layer in the slit forming region where the adjacent diodes are connected in series.
  • the material for burying the slit and the conductive layer are made of the same material, so that the connectivity between the two is improved and the contact property of the electrode portion of the diode is improved.
  • the bypass diode device (film diode device) is covered with a light-shielding resin, so that the diode is prevented from independently operating due to sunlight or the like.
  • the conductive substrate is selectively disposed on the support substrate, and the diode is formed on the upper surface of the conductive layer, and then a slit for separating the diode is formed to prevent the support substrate from being cut by the slit. Is done.
  • the moisture resistance of the bypass diode device is improved by forming a plurality of diodes on the front surface side of the polyimide layer and then bonding the film substrate to the back surface side of the polyimide layer.
  • the cathode electrode layer is formed of a transparent metal material, and the conductive resin layer is formed on the upper surface thereof, so that the characteristic inspection of the semiconductor layer can be easily performed.
  • the characteristic inspection of the semiconductor layer can be performed before forming the light-shielding resin layer of the bypass diode device (film diode device), and the manufacturing cost for the subsequent steps can be reduced.
  • FIG. 1 is a plan view for explaining a bypass diode device according to the present embodiment.
  • FIG. 2A is a cross-sectional view of the bypass diode device shown in FIG.
  • FIG. 2B is a plan view for explaining an electrode structure of each diode of the bypass diode device shown in FIG.
  • FIG. 3A is a cross-sectional view illustrating a situation where the bypass diode device is installed in the photovoltaic device.
  • FIG. 3B is a circuit diagram in which the bypass diode device is installed in the photovoltaic device.
  • the bypass diode device in this embodiment can be read as a film diode device.
  • the bypass diode device 1 is configured as a module in which a plurality of diodes are arranged in a matrix on a support substrate 2. Although details will be described later, the bypass diode device 1 is bonded to a photovoltaic device such as a solar cell, thereby preventing the cells of the photovoltaic device from being destroyed by, for example, a hot spot phenomenon.
  • a photovoltaic device such as a solar cell
  • FIG. 1 shows a surface to be bonded to the photovoltaic device of the bypass diode device 1, and a light-shielding resin layer 3 is formed on the upper surface of the support substrate 2. Then, from the resin layer 3 on the support substrate 2, 30 terminal connection portions 4 in 3 rows (paper surface X-axis direction) and 10 columns (paper surface Y-axis direction) are exposed.
  • the bypass diode device 1 for example, one diode 5 a to 5 i is formed between the terminal connection portions 4 in the paper Y-axis direction, and one row of 10 diodes 5 a to 5 i arranged in the paper Y-axis direction includes: They are connected in series by the electrode structure.
  • each of the diodes 5a to 5i of the bypass diode device 1 is formed in accordance with the shape of each cell of the photovoltaic device. Further, the bypass diode device 1 has a sheet shape having a thickness of about 0.4 mm, for example, and is excellent in flexibility.
  • the positions of the terminal connection portions 4 of the respective diodes of the bypass diode device 1 and the external connection electrodes of the respective cells of the photovoltaic device can be made to correspond to each other.
  • the mounting operation of the bypass diode device 1 is completed.
  • the work of individually attaching the diode to each cell of the photovoltaic device can be omitted, and the workability is improved.
  • the bypass diode device 1 has flexibility, so that the bypass diode device 1 can be bonded to the curved surface.
  • each terminal connection part 4 of the bypass diode apparatus 1 is arrange
  • a connection structure is realized.
  • Each diode of the bypass diode device 1 is not limited to the rectangular shape shown in FIG. 1 and can be changed to any shape according to the cell shape of the photovoltaic device. is there.
  • the cell shape of the photovoltaic device is a round shape, a polygonal shape, or the like
  • each diode of the bypass diode device 1 is also formed in the same shape
  • the terminal connection portion 4 is also an external connection electrode of each cell. Arranged according to the position.
  • three diodes arranged in the X-axis direction on the paper surface may be connected in series to form one module, and any design change may be made according to the cell arrangement of the photovoltaic device. Is possible.
  • the terminal connection portion 4 is disposed in a region where the diodes 5a to 5i are connected in series. As illustrated by arrows, the series connection region is a region where the formation regions of adjacent diodes 5a to 5i overlap. is there.
  • FIG. 2A shows the diode 5 a in the bypass diode device 1.
  • the support substrate 2 is formed by bonding an insulating layer 7 made of, for example, a polyimide coat film to the upper surface of a film substrate 6 having excellent heat resistance such as polyethylene naphthalate, polycarbonate, polyethylene terephthalate, and polyvinyl petital. .
  • a conductive resin layer 8 made of, for example, silver paste is formed on the upper surface of the support substrate 2, and the film thickness is, for example, about 10 to 30 ⁇ m.
  • the conductive resin layer 8 is provided in order to improve the contact property between the electrodes of the adjacent diodes 5 a and 5 b, and is disposed below the formation region of the terminal connection portion 4. Specifically, as shown in FIG. 1, the conductive resin layer 8 is arranged in the same shape, for example, below the 30 terminal connection portions 4.
  • the conductive resin layer 8 is also used as a penetration preventing layer for laser processing when the slit 12 is formed.
  • the anode electrode layer 9 is formed on the support substrate 2 so as to cover the conductive resin layer 8 and extend to the formation region side of the adjacent diode 5b.
  • the film thickness of the anode electrode layer 9 is, for example, about 200 nm, and is disposed over a wider area than the conductive resin layer 8.
  • the anode electrode layer 9 is made of a metal film such as tungsten, aluminum, titanium, nickel, or copper.
  • the anode electrode layer 9 may be made of a transparent material such as tin-added indium oxide (ITO).
  • the semiconductor layer 10 is formed on the support substrate 2 so as to cover the anode electrode layer 9.
  • the film thickness of the semiconductor layer 10 is, for example, about 500 nm.
  • the semiconductor layer 10 is formed using amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like, and a PN junction or PIN junction is formed in the semiconductor layer 10.
  • the cathode electrode layer 11 is formed on the semiconductor layer 10 so as to face the anode electrode layer 9 of the diode 5a and extend to the series connection region.
  • the thickness of the cathode electrode layer 11 is, for example, about 100 nm.
  • the cathode electrode layer 11 is formed of a metal layer that transmits light, such as zinc oxide, indium tin oxide, tin oxide, or tin-added indium oxide (ITO).
  • ITO tin-added indium oxide
  • the cathode electrode layer 11 is formed of a transparent metal material, the inspection light is transmitted through the cathode electrode layer 11 to the semiconductor layer in the characteristic inspection process of the semiconductor layer 10. It becomes possible to enter.
  • the series connection region is a region where the diodes 5 a and 5 b overlap and corresponds to the region where the terminal connection portion 4 is formed.
  • the slit 12 is formed so as to penetrate the anode electrode layer 9, the semiconductor layer 10, and the cathode electrode layer 11 by, for example, a laser scribing method. As shown in FIG. 2B, the slit 12 extends, for example, the cathode electrode layer 11 in the X-axis direction on the paper surface. A part of the anode electrode layer 9 of the adjacent diode is disposed below the formation region of the cathode electrode layer 11, and both are electrically connected via the slit 12 structure.
  • a conductive resin layer 13 made of, for example, silver paste is formed on the upper surface of the cathode electrode layer 11 and is disposed below the formation region of the terminal connection portion 4 (see FIG. 1), similarly to the conductive resin layer 8. .
  • the conductive resin layer 13 is also embedded in the slit 12 and connected to the anode electrode layer 9 and the conductive resin layer 8 exposed from the slit 12. With this structure, the conductive resin layer 13 is also connected to the conductive resin layer 8, and the conductive electrode layer 8 functions as a part of the anode electrode layer 9.
  • the cathode electrode layer 11 of the diode 5 a is electrically connected to the anode electrode layer 9 of the adjacent diode 5 b through the conductive resin 13.
  • a row of ten diodes 5a to 5i arranged in the Y-axis direction on the paper surface are connected in series by this electrode structure.
  • FIG. 2B shows an arrangement of the anode electrode layer 9, the cathode electrode layer 11, and the conductive resin layer 13.
  • a solid line indicates an arrangement region of the conductive resin layer 13
  • a one-dot chain line indicates an arrangement region of the anode electrode layer 9
  • a two-dot chain line indicates an arrangement region of the cathode electrode layer 11.
  • the conductive resin layer 13 is in a comb-teeth state from the main electrode portion 13a disposed below the formation region of the terminal connection portion 4 (see FIG. 1) and from the main electrode portion 13a to the Y-axis direction on the paper surface.
  • the branch electrode portion 13b is disposed on the branch electrode portion 13b.
  • the conductive resin layer 13 By laminating the conductive resin layer 13 and the cathode electrode 11, the current from the cathode electrode layer 11 can flow more efficiently, and the current characteristics of the bypass diode device 1 are improved. Further, since the conductive resin layer 13 has a comb shape, light for characteristic inspection of the semiconductor layer 10 can enter the semiconductor layer 10 through the gap.
  • the anode electrode layer 9 and the cathode electrode layer 11 are plate-like bodies, and the opposing region of the anode electrode layer 9 and the cathode electrode layer 11 is mainly used as a diode. This is a functional area. This structure can facilitate the inspection of the bypass diode device 1 as will be described later.
  • the resin layer 3 is formed so as to cover the cathode electrode layer 11 and the semiconductor layer 10.
  • the resin layer 3 is formed of an epoxy resin or the like having excellent light shielding properties, and the thickness of the resin layer 3 is, for example, about 15 to 20 ⁇ m.
  • the resin layer 3 prevents sunlight or the like incident from the photovoltaic device side from entering the semiconductor layer 10, and the diodes of the photovoltaic device are caused by the incidence of sunlight or the like. To prevent it from working.
  • An opening 14 is formed in a region where the terminal connection portion 4 of the resin layer 3 is formed.
  • the terminal connection portion 4 is embedded in the opening 14 and formed on the upper surface of the conductive resin layer 13.
  • the terminal connection portion 4 is formed, for example, by screen-curing Cu paste and then thermosetting.
  • the bypass diode apparatus 1 is installed in a photovoltaic apparatus because the terminal connection part 4 electrically connects with the electrode for external connection of each cell of a photovoltaic apparatus.
  • FIG. 3A shows a structure in which the bypass diode device 1 is installed in the photovoltaic device 15.
  • the photovoltaic device 15 is mainly composed of a glass substrate 16, a transparent electrode layer 17, a semiconductor photoactive layer 18, and a metal electrode layer 19.
  • region of the transparent electrode layer 17 and the metal electrode layer 19 within the cell of the photovoltaic apparatus 15 mainly functions as a diode.
  • the transparent electrode layer 17 is selectively formed on the upper surface of the glass substrate 16 and is formed of zinc oxide, indium tin oxide, tin oxide, tin-added indium oxide (ITO), or the like.
  • the semiconductor photoactive layer 18 is formed on the upper surface of the glass substrate 16 so as to cover the transparent electrode layer 17.
  • the semiconductor photoactive layer 18 is formed using amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like, and the semiconductor photoactive layer 18 is formed with a PN junction or a PIN junction.
  • the semiconductor photoactive layer 18 is divided for each cell by the slit 20, and a part of the transparent electrode layer 17 is exposed from the slit 20.
  • the metal electrode layer 19 is selectively formed on the upper surface of the semiconductor photoactive layer 18, and the metal electrode layer 19 is embedded in the slit 20 and electrically connected to the transparent electrode layer 17 of the adjacent diode.
  • the metal electrode layer 19 is made of, for example, tungsten, aluminum, titanium, nickel, copper or the like.
  • three cells partitioned by the slit 20 are illustrated and connected in series by the electrode structure described above.
  • the terminal connection 4 of each diode of the bypass diode device 1 is connected corresponding to the metal electrode layer 19 of each cell of the photovoltaic device 15, and each cell of the photovoltaic device 15 is connected to the diode.
  • the terminal connection part 4 of the bypass diode apparatus 1 and the metal electrode layer 19 of the photovoltaic apparatus 15 are connected by heating, after aligning both.
  • FIG. 3B a circuit diagram of the structure shown in FIG. 3A is shown.
  • a region indicated by a one-dot chain line is the bypass diode device 1
  • a region indicated by a two-dot chain line is a photovoltaic device. 15.
  • the cell of the photovoltaic device 15 is, for example, a thin film photoelectric conversion cell, and the photovoltaic device 15 is integrated by connecting a plurality of cells in series.
  • bird droppings or tree leaves adhere to the glass substrate 16 that is the light receiving surface of the cell and is shielded from light so that the amount of photovoltaic power in the shielded cell is reduced. To do.
  • the cell in which the amount of photovoltaic power is reduced becomes a diode connected in the opposite direction to the direction of the generated current indicated by the arrow, and acts as a very large resistor.
  • a large reverse voltage is applied to a cell having a reduced amount of photovoltaic power, a hot spot phenomenon occurs, and local destruction occurs.
  • the insulating layer 7 made of the polyimide coat film is bonded to the upper surface of the film substrate 6 as the support substrate 2 .
  • the present invention is not limited to this case.
  • a metal substrate whose surface is covered with an insulating film such as a glass substrate or a resin film may be used as the support substrate 2, and the insulating layer 7 is not a polyimide coat film, but ensures insulation, and the support substrate If 2 has flexibility, other insulating resins such as liquid crystal polymer may be formed.
  • the cathode electrode 11 may be formed of a metal film such as tungsten, aluminum, titanium, nickel, or copper.
  • the cell of the photovoltaic device 15 and the terminal connection portion 4 of the bypass diode device 1 have a one-to-one correspondence. It is also possible to associate one bypass diode with the cell. That is, the interval between the terminal connection portions 4 of the bypass diode device 1 may be an integer multiple of the interval between cells of the photovoltaic device.
  • various modifications can be made without departing from the scope of the present invention.
  • FIGS. 1 to 3 are cross-sectional views for explaining a method of manufacturing the bypass diode device.
  • the bypass diode device can be read as a film diode device.
  • an auxiliary substrate 22 made of, for example, a glass substrate or a stainless steel substrate is prepared, and an insulating layer 7 made of a polyimide coating film is formed on the surface side of the auxiliary substrate 22 by, for example, a coating method.
  • the conductive resin layer 8 is screen-printed on the front surface side (insulating layer 7 side) of the auxiliary substrate 22 and, for example, as shown in FIG. 1, 3 rows (paper surface X-axis direction) 10 columns (paper surface Y-axis direction).
  • the conductive resin layer 8 is formed at 30 locations.
  • the anode electrode layer 9 is formed by sputtering, for example, so as to cover the conductive resin layer 8 on the surface side of the auxiliary substrate 22.
  • the groove 23 is formed by a method such as laser processing or etching, and processed into a shape that separates the adjacent diodes 5a and 5b.
  • a material of the anode electrode layer 9 tungsten, aluminum, titanium, nickel, copper, etc. are used, The film thickness is about 200 nm, for example.
  • the semiconductor layer 10 is formed on the surface side of the auxiliary substrate 22 by, for example, the CVD method so as to cover the anode electrode layer 9.
  • the semiconductor layer 10 amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like is deposited.
  • an impurity is implanted and diffused in the semiconductor layer 10 to form a PN junction or a PIN junction.
  • the film thickness of the semiconductor layer 10 is, for example, about 500 nm.
  • the cathode electrode layer 11 is formed by sputtering, for example, so as to cover the semiconductor layer 10 on the surface side of the auxiliary substrate 22.
  • the groove 24 is formed by a method such as laser processing or etching, and the cathode electrode layer 11 is processed into a plate-like body indicated by a two-dot chain line in FIG.
  • the slit 12 is formed below the formation region of the terminal connection portion 4 (see FIG. 6) by a laser scribing method.
  • the slit 12 is formed through the anode electrode layer 9, the semiconductor layer 10, and the cathode electrode layer 11.
  • the conductive resin layer 8 is used as a laser beam penetration preventing layer when the slit 12 is formed, and prevents the insulating layer 7 from being cut by the laser beam (laser scribing method).
  • the conductive resin layer 13 made of, for example, silver paste is formed on the surface side of the auxiliary substrate 22 by screen printing.
  • the conductive resin layer 13 is used to electrically connect the cathode electrode layer 11 and the anode electrode layer 9 of the adjacent diode. Therefore, like the conductive resin layer 8, the conductive resin layer 13 is disposed below the region where the terminal connection portion 4 is formed, and is embedded in the slit 12.
  • the resin layer 3 is formed on the surface side of the auxiliary substrate 22 by screen printing.
  • the resin layer 3 is, for example, an epoxy resin excellent in light shielding properties, and the film thickness thereof is, for example, about 300 nm.
  • An opening 14 is formed in the resin layer 3 so that the conductive resin layer 13 is exposed, and a Cu paste is screen-printed on the surface side of the auxiliary substrate 22 so as to embed the inside of the opening 14, thereby connecting terminals. Part 4 is formed.
  • the auxiliary substrate 22 is peeled off from the interface with the insulating layer 7.
  • a film substrate 6 having a size equal to or larger than that of the insulating layer 7 is prepared, and the film substrate 6 and the insulating layer 7 are bonded together to form the support substrate 2 of the bypass diode device 1.
  • the support substrate 2 and the like are cut into a desired shape, and the bypass diode device 1 is completed.
  • the bypass diode apparatus 1 is cut
  • the bypass diode device 1 includes an anode electrode layer 9, a semiconductor layer 10, and a cathode electrode layer 11 without the resin layer 3.
  • the semiconductor layer 10 becomes photoelectric. It plays the role of a conversion layer and operates as a solar cell. Therefore, as shown in FIG. 2B, after forming the comb-like branch electrode portion 13b on the conductive resin layer 13, before forming the resin layer 3, the measurement terminal of the measuring device is connected to the conductive resin layer 13.
  • the characteristics of the semiconductor layer 10 can be measured, and the bypass diode device 1 can be inspected.
  • the characteristics of the bypass diode device 1 with the same measuring device as a film-type solar cell that also serves many devices in the manufacturing process, and there is no need to purchase a new measuring device, thus reducing manufacturing costs. Is done.
  • the characteristics of the semiconductor layer at this stage it is possible to remove those that do not satisfy a certain quality condition, and the subsequent process becomes unnecessary, so that the manufacturing cost is suppressed.
  • the bypass diode device 1 is formed as a separate structure from the photovoltaic device 15 and then bonded to the photovoltaic device 15.
  • the photovoltaic device is not defective when the bypass diode device is formed.
  • the bypass diode device is broken when used as a photovoltaic device, it can be dealt with by replacing only the bypass diode device, and the product maintenance cost can be suppressed.
  • the bypass diode device 1 is formed on the auxiliary substrate 22 using the auxiliary substrate 22 such as glass, the auxiliary substrate 22 is peeled from the insulating layer 7 made of a polyimide coat film, and the insulating layer 7
  • the bypass diode device 1 described above is formed on a metal substrate or film substrate whose surface is covered with an insulating film such as a glass substrate or a resin film, and used as the bypass diode device 1 without peeling off the glass substrate or the like. It may be done.
  • various modifications can be made without departing from the scope of the present invention.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Les dispositifs de diode en parallèle de l'art antérieur posent un problème en ce que les diodes sont montées individuellement sur chacune des cellules d'un dispositif photovoltaïque, et présentent ainsi de mauvaises propriétés opérationnelles et une durée des opérations peu susceptible d'être réduite. Dans le dispositif de diode en parallèle (1) de l'invention, une pluralité de diodes (5a à 5i) sont formées sur la face supérieure d'un substrat de support (2), et connectées en série. D'autre part, une pluralité de parties de connexion de borne (4) connectées aux diodes (5a à 5i), sont disposées en correspondance avec des électrodes pour connexion externe de chacune des cellules du dispositif photovoltaïque. Du fait de cette structure, la pluralité de diodes (5a à 5i) sont connectées à chacune des cellules du dispositif photovoltaïque en une seule opération de montage, permettant ainsi d'améliorer les propriétés opérationnelles de montage, et de réduire la durée de montage.
PCT/JP2011/070966 2010-09-24 2011-09-14 Dispositif de diode en parallèle ainsi que procédé d'examen de celui-ci, et procédé de fabrication de dispositif de diode en film WO2012039332A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2010-214298 2010-09-24
JP2010214298A JP2013251286A (ja) 2010-09-24 2010-09-24 バイパスダイオード装置及びその検査方法
JP2010214299A JP2013251287A (ja) 2010-09-24 2010-09-24 バイパスダイオード装置
JP2010214300A JP2013251288A (ja) 2010-09-24 2010-09-24 フィルムダイオード装置の製造方法
JP2010-214300 2010-09-24
JP2010-214299 2010-09-24

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WO2012039332A1 true WO2012039332A1 (fr) 2012-03-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013011707A1 (fr) * 2011-07-20 2013-01-24 富士電機株式会社 Module de batterie solaire

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009044049A (ja) * 2007-08-10 2009-02-26 Sharp Corp 太陽電池アレイおよび太陽電池モジュール
JP2009533856A (ja) * 2006-04-13 2009-09-17 シェル・エルノイエルバーレ・エネルギエン・ゲーエムベーハー 太陽電池モジュール
JP2010080916A (ja) * 2008-09-26 2010-04-08 Dragon Energy Pte Ltd 太陽電池パネル

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009533856A (ja) * 2006-04-13 2009-09-17 シェル・エルノイエルバーレ・エネルギエン・ゲーエムベーハー 太陽電池モジュール
JP2009044049A (ja) * 2007-08-10 2009-02-26 Sharp Corp 太陽電池アレイおよび太陽電池モジュール
JP2010080916A (ja) * 2008-09-26 2010-04-08 Dragon Energy Pte Ltd 太陽電池パネル

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013011707A1 (fr) * 2011-07-20 2013-01-24 富士電機株式会社 Module de batterie solaire

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