WO2012029407A1 - Sintered oxide and oxide semiconductor thin film - Google Patents
Sintered oxide and oxide semiconductor thin film Download PDFInfo
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- WO2012029407A1 WO2012029407A1 PCT/JP2011/065583 JP2011065583W WO2012029407A1 WO 2012029407 A1 WO2012029407 A1 WO 2012029407A1 JP 2011065583 W JP2011065583 W JP 2011065583W WO 2012029407 A1 WO2012029407 A1 WO 2012029407A1
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- Prior art keywords
- metal ion
- oxide
- thin film
- sintered body
- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 54
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 229910001449 indium ion Inorganic materials 0.000 claims abstract description 14
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 7
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- -1 oxygen ions Chemical class 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 45
- 239000000203 mixture Substances 0.000 abstract description 23
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052733 gallium Inorganic materials 0.000 abstract description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 30
- 239000007789 gas Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 239000002994 raw material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005477 sputtering target Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000005245 sintering Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 231100000989 no adverse effect Toxicity 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Definitions
- the present invention relates to an oxide sintered body and an oxide semiconductor thin film useful for manufacturing a thin film transistor in a display device.
- Oxide semiconductors are used as active layers of thin film transistors in display devices such as liquid crystal display devices, plasma display devices, and organic EL display devices, as well as electrodes for solar cells and touch panels.
- display devices such as liquid crystal display devices, plasma display devices, and organic EL display devices, as well as electrodes for solar cells and touch panels.
- IGZO-based transparent In—Ga—Zn—O-based
- Patent Documents 1 and 2 There is also a report on a system to which Sn) is added (see Patent Documents 1 and 2).
- gallium (Ga) which is an essential component of these systems, is a rare element and has a large limitation for industrial use because of its high price.
- Patent Document 3 As a transparent oxide semiconductor not using Ga, an In—Zn—O system (see Patent Document 3), an In—Zn—Sn—O system (see Patent Document 4), and a Zn—Sn—O system (Patent Document 5). Report).
- the oxide semiconductors described in Patent Documents 3 to 5 do not use Ga, which is an essential component of the IGZO system, and are advantageous in terms of manufacturing cost. However, environmental stability such as a change in resistivity over time is advantageous. The problem is still inferior.
- zinc (Zn) which is another essential constituent element of the IGZO system, is an element that easily volatilizes, and a decrease in the density of the sintered body due to volatilization during the production of the sintered body, This is an impediment to the stability of the film, such as deviation of the film and changes in the resistivity of the film over time.
- the present invention is a rare resource, expensive gallium (Ga), and oxide sinter for producing an oxide semiconductor film that does not contain zinc (Zn), which easily volatilizes and has a problem in film stability.
- the challenge is to provide a body.
- Another object of the present invention is to provide an oxide semiconductor thin film having the same composition as the oxide sintered body.
- the present inventor has intensively studied to solve the above-mentioned problems.
- a substitute for zinc (Zn) which easily volatilizes
- a predetermined divalent metal is used as a substitute for gallium (Ga), which is a rare and expensive element.
- a metal ion (Z 4+ ) (wherein Z represents one or more elements selected from Si, Ge, Ti and Zr) and an oxygen ion (O 2 ⁇ ), and trivalent indium.
- the atomic ratio of the ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) is 0. 2 ⁇ [In 3+ ] / ⁇ [In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ ⁇ 0.8, 0.1 ⁇ [X 2+ ] / ⁇ [ In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ ⁇ 0.5 and 0.1 ⁇ ⁇ [Y 3+ ] + [Z 4+ ] ⁇ / ⁇ [In 3+ ] + It is an oxide sintered body satisfying [X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ ⁇ 0.5.
- the oxide sintered body according to the present invention has a relative density of 98% or more.
- the oxide sintered body according to the present invention has a bulk resistance of 3 m ⁇ or less.
- a trivalent indium ion (In 3+ ) and a divalent metal ion (X 2+ ) (where X is one or more selected from Mg, Ca, Co and Mn)
- a trivalent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y and Cr) or a tetravalent metal ion (Z 4 + ) (Wherein Z represents one or more elements selected from Si, Ge, Ti and Zr) and oxygen ions (O 2 ⁇ ), and trivalent indium ions (In 3+ ).
- the atomic ratio of divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) is 0.2 ⁇ [In 3+ ] / ⁇ [In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ ⁇ 0.8, 0.1 ⁇ [X 2+ ] / ⁇ [In 3+ ] + [ X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ ⁇ 0.5 and 0.1 ⁇ ⁇ [Y 3+ ] + [Z 4+ ] ⁇ / ⁇ [In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ ⁇ 0.5.
- the oxide semiconductor thin film according to the present invention is amorphous.
- the oxide semiconductor thin film according to the present invention has a carrier concentration of 10 16 to 10 18 cm ⁇ 3 .
- the oxide semiconductor thin film according to the present invention has a mobility of 1 cm 2 / Vs or more.
- the present invention is a thin film transistor including the oxide semiconductor thin film as an active layer.
- the present invention is an active matrix drive display panel including the thin film transistor.
- oxide sinter for manufacturing an oxide semiconductor film that does not contain rare gallium (Ga) and zinc (Zn) that is easily evaporated and has a problem in film stability.
- the body can be provided.
- the oxide semiconductor thin film which has the same composition as the said oxide sinter can be provided.
- the oxide sintered body according to the present invention is a trivalent indium ion (In 3+ ) and a divalent metal ion (X 2+ ) (where X is selected from Mg, Ca, Co and Mn 1 And a trivalent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y, and Cr) or a tetravalent metal ion ( Z 4+ ) (wherein Z represents one or more elements selected from Si, Ge, Ti, and Zr) and oxygen ions (O 2 ⁇ ).
- [In 3+ ] / ⁇ [In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ is more desirably in the range of 0.25 to 0.6, and further desirably. Is in the range of 0.3 to 0.5.
- [In 3+ ] is the number of indium atoms
- [X 2+ ] is the number of divalent metal ions (X 2+ )
- [Y 3+ ] is a trivalent metal ion (Y 3+ ).
- [Z 4+ ] represents the number of atoms of a tetravalent metal ion (Z 4+ ).
- Ratio of total number of atoms of trivalent indium ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) is 0.1 to 0.5.
- ⁇ [Y 3+ ] + [Z 4+ ] ⁇ / ⁇ [In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ] ⁇ is more preferably 0.15 to 0.00. Is in the range of 4, more preferably in the range of 0.2 to 0.35.
- the relative density of the oxide sintered body has a correlation with the generation of joules on the surface during sputtering.
- the oxide sintered body has a low density
- a high resistance portion called a nodule is generated, and tends to be the starting point of abnormal discharge during subsequent sputtering.
- the relative density of the oxide sintered body can be set to 98% or more by optimizing the appropriate range of the composition and the manufacturing conditions.
- the relative density is preferably 99% or more, more preferably 99.5% or more.
- the relative density of the oxide sintered body is obtained by dividing the density calculated from the weight and outer dimensions after processing the oxide sintered body into a predetermined shape by the theoretical density of the oxide sintered body. Can be sought.
- the bulk resistance of the oxide sintered body has a correlation with the ease of occurrence of abnormal discharge during sputtering, and when the bulk resistance is high, abnormal discharge is likely to occur during sputtering.
- the bulk resistance can be reduced to 3 m ⁇ cm or less by optimizing the appropriate range of composition and manufacturing conditions. With such a low bulk resistance, there is almost no adverse effect on the occurrence of abnormal discharge during sputtering.
- the bulk resistance is preferably 2.7 m ⁇ cm or less, more preferably 2.5 m ⁇ cm or less. Bulk resistance can be measured using a resistivity meter by the four-probe method.
- the oxide sintered body having various compositions according to the present invention includes, for example, the mixing ratio of raw material powders such as indium oxide and magnesium oxide as raw materials, the particle size of the raw material powders, the pulverization time, the sintering temperature, and the sintering. It can be obtained by adjusting conditions such as time and kind of sintering atmosphere gas.
- the raw material powder preferably has an average particle size of 1 to 2 ⁇ m.
- the average particle diameter exceeds 2 ⁇ m, the density of the sintered body is difficult to improve. Therefore, wet pulverization or the like is performed as the raw material powder alone or as a mixed powder, and the average particle diameter is preferably reduced to about 1 ⁇ m.
- the average particle diameter of the raw material powder indicates a value measured by a laser diffraction measurement method. It is preferable to mold the pulverized raw material mixed powder after granulating it with a spray dryer or the like to improve fluidity and moldability. For molding, a method such as normal pressure molding or cold isostatic pressing can be employed.
- the molded product is sintered to obtain a sintered body.
- Sintering is preferably performed at 1400 to 1600 ° C. for 2 to 20 hours. Thereby, a relative density can be 98% or more. If the sintering temperature is less than 1400 ° C., the density is difficult to improve. If the sintering temperature exceeds 1600 ° C., the composition of the sintered body changes due to volatilization of constituent elements, or the density decreases due to void generation due to volatilization. It may cause. Air can be used as the atmosphere gas during sintering, and a high-density sintered body can be obtained due to the effect of suppressing volatilization from the sintered body. However, depending on the composition of the sintered body, a sufficiently high density sintered body can be obtained even if the atmospheric gas is oxygen.
- the oxide sintered body obtained as described above can be used as a sputtering target by performing processing such as grinding and polishing, and by using this film, the same composition as that of the target can be obtained. It is possible to form an oxide film having At the time of processing, it is desirable that the surface roughness (Ra) be 5 ⁇ m or less by grinding the surface by a method such as surface grinding. By reducing the surface roughness, the starting point of nodule generation that causes abnormal discharge can be reduced.
- the sputtering target is affixed to a backing plate made of copper or the like, placed in a sputtering apparatus, and sputtered under appropriate conditions such as an appropriate degree of vacuum, atmospheric gas, and sputtering power, so that the film has almost the same composition as the target. Can be obtained.
- the degree of vacuum reached in the chamber before film formation is 2 ⁇ 10 ⁇ 4 Pa or less. If the pressure is too high, the mobility of the obtained film may decrease due to the influence of impurities in the residual atmospheric gas.
- a mixed gas of argon and oxygen can be used as the sputtering gas.
- a gas cylinder with 100% argon and a gas cylinder with 2% oxygen in argon are used, and the supply flow rate from each gas cylinder to the chamber is appropriately set by mass flow.
- the oxygen concentration in the mixed gas means oxygen partial pressure / (oxygen partial pressure + argon partial pressure), and is equal to the oxygen flow rate divided by the sum of oxygen and argon flow rates.
- the oxygen concentration may be appropriately changed according to the desired carrier concentration, but it can be typically 1 to 3%, more typically 1 to 2%.
- the total pressure of the sputtering gas is about 0.3 to 0.8 Pa. If the total pressure is lower than this, the plasma discharge is difficult to stand up, and even if it stands, the plasma becomes unstable. On the other hand, if the total pressure is higher than this, the film formation rate becomes slow, which causes inconveniences such as adversely affecting productivity.
- the film is formed with a sputtering power of about 200 to 1200 W. If the sputtering power is too low, the film forming speed is low and the productivity is poor. Conversely, if the sputtering power is too high, problems such as cracking of the target occur. 200 ⁇ 1200 W when converted to a sputtering power density is 1.1W / cm 2 ⁇ 6.6W / cm 2, it is desirable that the 3.2 ⁇ 4.5W / cm 2.
- the sputtering power density is a value obtained by dividing the sputtering power by the area of the sputtering target, and even with the same sputtering power, the power actually received by the sputtering target varies depending on the sputtering target size, and the film formation speed differs. It is an index for uniformly expressing the power applied to the sputtering target.
- a vacuum deposition method As a method for obtaining a film from an oxide sintered body, a vacuum deposition method, an ion plating method, a PLD (pulse laser deposition) method, or the like can be used.
- This is a DC magnetron sputtering method that satisfies requirements such as film formation and discharge stability.
- the substrate there is no need to heat the substrate during sputter deposition. This is because a relatively high mobility can be obtained without heating the substrate, and it is not necessary to spend time and energy for raising the temperature.
- the resulting film becomes amorphous.
- the film since the same effect as annealing after film formation at room temperature can be expected by heating the substrate, the film may be formed by heating the substrate.
- carrier concentration of oxide film correlates with various characteristics of the transistor when the film is used for the channel layer of the transistor. If the carrier concentration is too high, a minute leakage current is generated even when the transistor is turned off, and the on / off ratio is lowered. On the other hand, if the carrier concentration is too low, the current flowing through the transistor becomes small.
- the carrier concentration of the oxide film can be set to 10 16 to 10 18 cm ⁇ 3 depending on an appropriate range of the composition and the like, and a transistor with favorable characteristics can be manufactured within this range.
- the mobility is one of the most important characteristics of the transistor, and the oxide semiconductor has a mobility of 1 cm 2 / Vs or more which is the mobility of amorphous silicon which is a competitive material used as a channel layer of the transistor. Is desirable. Basically, the higher the mobility, the better.
- the oxide film according to the present invention can have a mobility of 1 cm 2 / Vs or more, preferably a mobility of 3 cm 2 / Vs or more, more preferably 5 cm 2 depending on an appropriate range of the composition. It can have a mobility of / Vs or higher. Thereby, it becomes a characteristic superior to amorphous silicon, and industrial applicability is further increased.
- the oxide semiconductor thin film according to the present invention can be used, for example, as an active layer of a thin film transistor.
- the thin film transistor obtained by using the above manufacturing method can be used as an active element and used for an active matrix drive display panel.
- the physical properties of the sintered bodies and films were measured by the following methods.
- A Composition of sintered body and film It was determined by an ICP (high frequency inductively coupled plasma) analysis method using a model SPS3000 manufactured by SII Nanotechnology.
- A Relative density of sintered body The relative density was determined from the measurement results of weight and outer dimensions and the theoretical density from the constituent elements.
- C Bulk resistance of sintered body The bulk resistance was determined by a four-probe method (JIS K7194) using a model ⁇ -5 + apparatus manufactured by NPS.
- D Film thickness It was determined using a step meter (Veeco, Model Dektak8 STYLUS PROFILER).
- Example 1 Indium oxide powder (average particle size: 1.0 ⁇ m), silicon oxide powder (average particle size: 1.0 ⁇ m), and magnesium oxide powder (average particle size: 1.0 ⁇ m) are mixed with an atomic ratio of metal elements (In: Si: Mg). ) was 0.4: 0.3: 0.3, and wet mixed and pulverized. The average particle size of the mixed powder after pulverization was 0.8 ⁇ m.
- This mixed powder was granulated with a spray dryer, filled into a mold, pressed, and then sintered at 1450 ° C. for 10 hours in an air atmosphere. The obtained sintered body was processed into a disk shape having a diameter of 6 inches and a thickness of 6 mm to obtain a sputtering target. With respect to the target, the relative density was calculated from the measurement results of the weight and the external dimensions, and the theoretical density, which was 99.5%. Further, the bulk resistance of the sintered body measured by the four probe method was 2.2 m ⁇ cm.
- the sputtering target prepared above was attached to a copper backing plate using indium as a brazing material, and was installed in a DC magnetron sputtering apparatus (APLVA SPL-500 sputtering apparatus).
- the glass substrate uses Corning 1737, and the sputtering conditions are as follows: substrate temperature: 25 ° C., ultimate pressure: 1.2 ⁇ 10 ⁇ 4 Pa, atmospheric gas: Ar 99%, oxygen 1%, sputtering pressure (total pressure): 0.
- a thin film having a thickness of about 100 nm was prepared at 5 Pa and input power of 500 W. No abnormal discharge was observed during the formation of the oxide semiconductor thin film.
- the hole of the obtained film was measured to determine the carrier concentration and mobility. As a result of measurement by X-ray diffraction, the film was amorphous.
- Example 2 to Example 12 An oxide sintered body and an oxide semiconductor thin film were obtained in the same manner as in Example 1 except that the composition ratio of the raw material powder was set to the respective values shown in Table 1. The relative density, bulk resistance, carrier concentration, and mobility of each were as shown in Table 1. The composition of the sintered body and the film was the same as the composition ratio of the raw material powder. No abnormal discharge was observed during the formation of these oxide semiconductor thin films.
- Mg and Ca are used as examples of divalent metal ions (X 2+ ), B is used as an example of trivalent metal ions (Y 3+ ), and tetravalent metal ions (Z 4+ are used).
- an oxide sintered body containing Si was prepared.
- Co or Mn as a divalent metal ion (X 2+ )
- Y or Cr as a trivalent metal ion (Y 3+ )
- Ge Ti or Zr as a tetravalent metal ion (Z 4+ )
- the carrier concentration was in the range of 10 16 to 10 18 cm ⁇ 3 and the mobility was 1 cm 2 / Vs or more.
- the carrier concentration was less than 10 16 cm ⁇ 3 .
- the mobility was less than 1 cm 2 / Vs.
- the carrier concentration was more than 10 18 cm ⁇ 3 .
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Abstract
The purpose of the present invention is to provide: a sintered oxide for use in the production of an oxide semiconductor film, which does not contain gallium (Ga), which is an expensive element, or zinc (Zn), which is an element that causes problems with respect to the stability of the film; and an oxide semiconductor thin film having the same chemical composition as that of the sintered oxide. The sintered oxide is composed of a trivalent indium ion (In3+), a bivalent metal ion (X2+) (wherein X represents at least one element selected from Mg, Ca, Co and Mn), a trivalent metal ion (Y3+) (wherein Y represents at least one element selected from B, Y and Cr) or a tetravalent metal ion (Z4+) (wherein Z represents at least one element selected from Si, Ge, Ti and Zr), and an oxygen ion (O2-), wherein the ratio of the number of atoms among the trivalent indium ion (In3+), the bivalent metal ion (X2+), the trivalent metal ion (Y3+) and the tetravalent metal ion (Z4+) fulfils the following formulae: 0.2 ≤ [In3+]/{[In3+]+[X2+]+[Y3+]+[Z4+]} ≤ 0.8, 0.1 ≤ [X2+]/{[In3+]+[X2+]+[Y3+]+[Z4+]} ≤ 0.5, and 0.1 ≤ {[Y3+]+[Z4+]}/{[In3+]+[X2+]+[Y3+]+[Z4+]} ≤ 0.5.
Description
本発明は表示装置中の薄膜トランジスタの作製に有用な酸化物焼結体及び酸化物半導体薄膜に関する。
The present invention relates to an oxide sintered body and an oxide semiconductor thin film useful for manufacturing a thin film transistor in a display device.
酸化物半導体は液晶表示装置、プラズマ表示装置及び有機ＥＬ表示装置などの表示装置中の薄膜トランジスタの活性層のほか、太陽電池及びタッチパネル等の電極として利用されている。従来、酸化物半導体としては透明なＩｎ－Ｇａ－Ｚｎ－Ｏ系（以降、「ＩＧＺＯ系」と記載）が知られており（非特許文献１参照）、更に、特性改善を意図して錫（Ｓｎ）を添加した系についての報告もある（特許文献１及び２参照）。しかし、これらの系の必須構成要素であるガリウム（Ｇａ）は希少元素であり、価格も高い等の理由から、産業上、大量に使用するには大きな制約がある。
Oxide semiconductors are used as active layers of thin film transistors in display devices such as liquid crystal display devices, plasma display devices, and organic EL display devices, as well as electrodes for solar cells and touch panels. Conventionally, a transparent In—Ga—Zn—O-based (hereinafter referred to as “IGZO-based”) is known as an oxide semiconductor (see Non-Patent Document 1). There is also a report on a system to which Sn) is added (see Patent Documents 1 and 2). However, gallium (Ga), which is an essential component of these systems, is a rare element and has a large limitation for industrial use because of its high price.
Ｇａを使用しない透明酸化物半導体としては、Ｉｎ－Ｚｎ－Ｏ系（特許文献３参照）、Ｉｎ－Ｚｎ－Ｓｎ－Ｏ系（特許文献４参照）、及びＺｎ－Ｓｎ－Ｏ系（特許文献５参照）の報告がある。
As a transparent oxide semiconductor not using Ga, an In—Zn—O system (see Patent Document 3), an In—Zn—Sn—O system (see Patent Document 4), and a Zn—Sn—O system (Patent Document 5). Report).
上記特許文献３～５に記載の酸化物半導体では、ＩＧＺＯ系の必須構成要素であるＧａを使用しておらず、製造コストの点で有利であるが、抵抗率の経時変化等の環境安定性が劣っている等の問題が残されている。また、ＩＧＺＯ系の別の必須構成要素である亜鉛（Ｚｎ）は、揮発し易い元素であり、焼結体製造時の揮発による焼結体密度の低下、スパッタ成膜時の揮発によるターゲット組成とのずれ、膜の抵抗率の経時変化等、膜の安定性の阻害要因となっている。
The oxide semiconductors described in Patent Documents 3 to 5 do not use Ga, which is an essential component of the IGZO system, and are advantageous in terms of manufacturing cost. However, environmental stability such as a change in resistivity over time is advantageous. The problem is still inferior. In addition, zinc (Zn), which is another essential constituent element of the IGZO system, is an element that easily volatilizes, and a decrease in the density of the sintered body due to volatilization during the production of the sintered body, This is an impediment to the stability of the film, such as deviation of the film and changes in the resistivity of the film over time.
そこで、本発明は、希少資源であり、高価なガリウム（Ｇａ）、及び、揮発し易く、膜の安定性に問題がある亜鉛（Ｚｎ）を含有しない酸化物半導体膜製造用の酸化物焼結体を提供することを課題とする。また、本発明は当該酸化物焼結体と同一組成をもつ酸化物半導体薄膜を提供することを別の課題とする。
Therefore, the present invention is a rare resource, expensive gallium (Ga), and oxide sinter for producing an oxide semiconductor film that does not contain zinc (Zn), which easily volatilizes and has a problem in film stability. The challenge is to provide a body. Another object of the present invention is to provide an oxide semiconductor thin film having the same composition as the oxide sintered body.
本発明者は上記課題を解決するために鋭意検討したところ、揮発し易い亜鉛（Ｚｎ）の代替として、所定の２価の金属を用い、希少且つ高価な元素であるガリウム（Ｇａ）の代替として、所定の３価又は４価の金属を用い、さらにこれらの原子数比、焼結体や膜の製造条件等を調整することにより、ガリウム（Ｇａ）及び亜鉛（Ｚｎ）を含有しない酸化物半導体膜製造用の酸化物焼結体及び酸化物半導体薄膜が得られることを見出した。
The present inventor has intensively studied to solve the above-mentioned problems. As a substitute for zinc (Zn), which easily volatilizes, a predetermined divalent metal is used as a substitute for gallium (Ga), which is a rare and expensive element. An oxide semiconductor that does not contain gallium (Ga) and zinc (Zn) by using a predetermined trivalent or tetravalent metal and further adjusting the atomic ratio, the production conditions of the sintered body and the film, etc. It has been found that an oxide sintered body and an oxide semiconductor thin film for film production can be obtained.
以上の知見を基礎として完成した本発明は一側面において、３価のインジウムイオン（Ｉｎ3+）と、２価の金属イオン（Ｘ2+）（但し、ＸはＭｇ、Ｃａ、Ｃｏ及びＭｎから選択される１種以上の元素を表す。）と、３価の金属イオン（Ｙ3+）（但し、ＹはＢ、Ｙ、Ｃｒから選択される１種以上の元素を表す。）又は４価の金属イオン（Ｚ4+）（但し、ＺはＳｉ、Ｇｅ、Ｔｉ、Ｚｒから選択される１種以上の元素を表す。）と、酸素イオン（Ｏ2-）とからなり、３価のインジウムイオン（Ｉｎ3+）、２価の金属イオン（Ｘ2+）、３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の原子数比がそれぞれ、０．２≦［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．８、０．１≦［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５、及び、０．１≦｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５を満たす酸化物焼結体である。
The present invention completed on the basis of the above knowledge, in one aspect, a trivalent indium ion (In 3+ ) and a divalent metal ion (X 2+ ) (where X is from Mg, Ca, Co and Mn). Represents one or more selected elements) and a trivalent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y and Cr) or tetravalent. A metal ion (Z 4+ ) (wherein Z represents one or more elements selected from Si, Ge, Ti and Zr) and an oxygen ion (O 2− ), and trivalent indium. The atomic ratio of the ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) is 0. 2 ≦ [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.8, 0.1 ≦ [X 2+ ] / {[ In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5 and 0.1 ≦ {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + It is an oxide sintered body satisfying [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5.
本発明に係る酸化物焼結体は一実施形態において、相対密度が９８％以上である。
In one embodiment, the oxide sintered body according to the present invention has a relative density of 98% or more.
本発明に係る酸化物焼結体は別の一実施形態において、バルク抵抗が３ｍΩ以下である。
In another embodiment, the oxide sintered body according to the present invention has a bulk resistance of 3 mΩ or less.
本発明は別の一側面において、３価のインジウムイオン（Ｉｎ3+）と、２価の金属イオン（Ｘ2+）（但し、ＸはＭｇ、Ｃａ、Ｃｏ及びＭｎから選択される１種以上の元素を表す。）と、３価の金属イオン（Ｙ3+）（但し、ＹはＢ、Ｙ、Ｃｒから選択される１種以上の元素を表す。）又は４価の金属イオン（Ｚ4+）（但し、ＺはＳｉ、Ｇｅ、Ｔｉ、Ｚｒから選択される１種以上の元素を表す。）と、酸素イオン（Ｏ2-）とからなり、３価のインジウムイオン（Ｉｎ3+）、２価の金属イオン（Ｘ2+）、３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の原子数比がそれぞれ、０．２≦［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．８、０．１≦［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５、及び、０．１≦｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５を満たす酸化物半導体薄膜である。
In another aspect of the present invention, a trivalent indium ion (In 3+ ) and a divalent metal ion (X 2+ ) (where X is one or more selected from Mg, Ca, Co and Mn) And a trivalent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y and Cr) or a tetravalent metal ion (Z 4 + ) (Wherein Z represents one or more elements selected from Si, Ge, Ti and Zr) and oxygen ions (O 2− ), and trivalent indium ions (In 3+ ). The atomic ratio of divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) is 0.2 ≦ [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.8, 0.1 ≦ [X 2+ ] / {[In 3+ ] + [ X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5 and 0.1 ≦ {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5.
本発明に係る酸化物半導体薄膜は一実施形態において、非晶質である。
In one embodiment, the oxide semiconductor thin film according to the present invention is amorphous.
本発明に係る酸化物半導体薄膜は別の一実施形態において、キャリア濃度が１０16～１０18ｃｍ-3である。
In another embodiment, the oxide semiconductor thin film according to the present invention has a carrier concentration of 10 16 to 10 18 cm −3 .
本発明に係る酸化物半導体薄膜は更に別の一実施形態において、移動度が１ｃｍ2／Ｖｓ以上である。
In still another embodiment, the oxide semiconductor thin film according to the present invention has a mobility of 1 cm 2 / Vs or more.
本発明は更に別の一側面において、上記酸化物半導体薄膜を活性層として備えた薄膜トランジスタである。
In still another aspect, the present invention is a thin film transistor including the oxide semiconductor thin film as an active layer.
本発明は更に別の一側面において、上記薄膜トランジスタを備えたアクティブマトリックス駆動表示パネルである。
In still another aspect, the present invention is an active matrix drive display panel including the thin film transistor.
本発明によれば、希少資源であり、高価なガリウム（Ｇａ）、及び、揮発し易く、膜の安定性に問題がある亜鉛（Ｚｎ）を含有しない酸化物半導体膜製造用の酸化物焼結体を提供することができる。また、本発明によれば、当該酸化物焼結体と同一組成をもつ酸化物半導体薄膜を提供することができる。
According to the present invention, oxide sinter for manufacturing an oxide semiconductor film that does not contain rare gallium (Ga) and zinc (Zn) that is easily evaporated and has a problem in film stability. The body can be provided. Moreover, according to this invention, the oxide semiconductor thin film which has the same composition as the said oxide sinter can be provided.
（酸化物焼結体の組成）
本発明に係る酸化物焼結体は、３価のインジウムイオン（Ｉｎ3+）と、２価の金属イオン（Ｘ2+）（但し、ＸはＭｇ、Ｃａ、Ｃｏ及びＭｎから選択される１種以上の元素を表す。）と、３価の金属イオン（Ｙ3+）（但し、ＹはＢ、Ｙ、Ｃｒから選択される１種以上の元素を表す。）又は４価の金属イオン（Ｚ4+）（但し、ＺはＳｉ、Ｇｅ、Ｔｉ、Ｚｒから選択される１種以上の元素を表す。）と、酸素イオン（Ｏ2-）とからなる。但し、通常入手可能な原料の精製工程上、不可避的に含まれてくる元素や、酸化物焼結体製造プロセス上不可避的に混入する不純物元素を、不可避的に含まれる濃度程度、例えば各元素１０ｐｐｍ程度まで含むものは本発明に係る焼結体に包含される。 (Composition of oxide sinter)
The oxide sintered body according to the present invention is a trivalent indium ion (In 3+ ) and a divalent metal ion (X 2+ ) (where X is selected from Mg, Ca, Co and Mn 1 And a trivalent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y, and Cr) or a tetravalent metal ion ( Z 4+ ) (wherein Z represents one or more elements selected from Si, Ge, Ti, and Zr) and oxygen ions (O 2− ). However, elements that are inevitably included in the purification process of raw materials that are usually available, and impurity elements that are inevitably mixed in the oxide sintered body manufacturing process, are inevitably contained at a concentration, for example, each element. What contains about 10 ppm is included in the sintered compact which concerns on this invention.
本発明に係る酸化物焼結体は、３価のインジウムイオン（Ｉｎ3+）と、２価の金属イオン（Ｘ2+）（但し、ＸはＭｇ、Ｃａ、Ｃｏ及びＭｎから選択される１種以上の元素を表す。）と、３価の金属イオン（Ｙ3+）（但し、ＹはＢ、Ｙ、Ｃｒから選択される１種以上の元素を表す。）又は４価の金属イオン（Ｚ4+）（但し、ＺはＳｉ、Ｇｅ、Ｔｉ、Ｚｒから選択される１種以上の元素を表す。）と、酸素イオン（Ｏ2-）とからなる。但し、通常入手可能な原料の精製工程上、不可避的に含まれてくる元素や、酸化物焼結体製造プロセス上不可避的に混入する不純物元素を、不可避的に含まれる濃度程度、例えば各元素１０ｐｐｍ程度まで含むものは本発明に係る焼結体に包含される。 (Composition of oxide sinter)
The oxide sintered body according to the present invention is a trivalent indium ion (In 3+ ) and a divalent metal ion (X 2+ ) (where X is selected from Mg, Ca, Co and Mn 1 And a trivalent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y, and Cr) or a tetravalent metal ion ( Z 4+ ) (wherein Z represents one or more elements selected from Si, Ge, Ti, and Zr) and oxygen ions (O 2− ). However, elements that are inevitably included in the purification process of raw materials that are usually available, and impurity elements that are inevitably mixed in the oxide sintered body manufacturing process, are inevitably contained at a concentration, for example, each element. What contains about 10 ppm is included in the sintered compact which concerns on this invention.
３価のインジウムイオン（Ｉｎ3+）、２価の金属イオン（Ｘ2+）、３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の合計原子数に対する３価のインジウムイオン（Ｉｎ3+）の原子数の比［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝は０．２～０．８である。［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝が０．２未満であると、ターゲット作製時の相対密度が小さくなり、バルク抵抗が高くなって、スパッタ時の異常放電が発生し易くなってしまう。［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝が０．８を超えると、その組成のターゲットをスパッタして得られる膜のキャリア濃度が高くなりすぎてしまい、トランジスタのチャネル層としてはオンオフ比が小さくなってしまう。［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝は、より望ましくは０．２５～０．６の範囲であり、更に望ましくは０．３～０．５の範囲である。ここで、［Ｉｎ3+］はインジウムの原子数、［Ｘ2+］は２価の金属イオン（Ｘ2+）の原子数、［Ｙ3+］は３価の金属イオン（Ｙ3+）の原子数、［Ｚ4+］は４価の金属イオン（Ｚ4+）の原子数をそれぞれ表す。
For the total number of atoms of trivalent indium ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) The ratio of the number of trivalent indium ions (In 3+ ) [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is 0.2. ~ 0.8. If [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is less than 0.2, the relative density at the time of target production becomes small, Bulk resistance becomes high, and abnormal discharge during sputtering is likely to occur. When [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} exceeds 0.8, a film obtained by sputtering a target having the composition The carrier concentration of the transistor becomes too high, and the on / off ratio of the channel layer of the transistor becomes small. [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is more desirably in the range of 0.25 to 0.6, and further desirably. Is in the range of 0.3 to 0.5. Here, [In 3+ ] is the number of indium atoms, [X 2+ ] is the number of divalent metal ions (X 2+ ), and [Y 3+ ] is a trivalent metal ion (Y 3+ ). [Z 4+ ] represents the number of atoms of a tetravalent metal ion (Z 4+ ).
３価のインジウムイオン（Ｉｎ3+）、２価の金属イオン（Ｘ2+）、３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の合計原子数に対する２価の金属イオン（Ｘ2+）の原子数の比［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝は０．１～０．５である。［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝が０．１未満であると、その組成のターゲットをスパッタして得られる膜のキャリア濃度が高くなりすぎてしまい、トランジスタのチャネル層としてはオンオフ比が小さくなってしまう。［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝が０．５を超えると、ターゲット作製時の相対密度が小さくなり、バルク抵抗が高くなって、スパッタ時の異常放電が発生し易くなってしまう。［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝は、より望ましくは０．１５～０．４の範囲であり、更に望ましくは０．２～０．３５の範囲である。
For the total number of atoms of trivalent indium ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) The ratio [X 2+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]] of the number of divalent metal ions (X 2+ ) is 0.1. ~ 0.5. When [X 2+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is less than 0.1, the target having the composition is obtained by sputtering. The carrier concentration of the film becomes too high, and the on / off ratio becomes small as the channel layer of the transistor. When [X 2+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} exceeds 0.5, the relative density at the time of target fabrication becomes small, and bulk Resistance becomes high, and abnormal discharge at the time of sputtering tends to occur. [X 2+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is more preferably in the range of 0.15 to 0.4, and more preferably Is in the range of 0.2 to 0.35.
３価のインジウムイオン（Ｉｎ3+）、２価の金属イオン（Ｘ2+）、３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の合計原子数に対する３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の合計原子数の比｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝は０．１～０．５である。｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝が０．１未満であると、その組成のターゲットをスパッタして得られる膜のキャリア濃度が高くなりすぎてしまい、トランジスタのチャネル層としてはオンオフ比が小さくなってしまう。｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝が０．５を超えると、ターゲット作製時の相対密度が小さくなり、バルク抵抗が高くなって、スパッタ時の異常放電が発生し易くなってしまう。｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝は、より望ましくは０．１５～０．４の範囲であり、更に望ましくは０．２～０．３５の範囲である。
For the total number of atoms of trivalent indium ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) Ratio of total number of atoms of trivalent metal ion (Y 3+ ) and tetravalent metal ion (Z 4+ ) {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is 0.1 to 0.5. When {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is less than 0.1, the composition The carrier concentration of the film obtained by sputtering this target becomes too high, and the on / off ratio of the channel layer of the transistor becomes small. When {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} exceeds 0.5, the target is manufactured. The relative density of the metal becomes small, the bulk resistance becomes high, and abnormal discharge during sputtering is likely to occur. {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} is more preferably 0.15 to 0.00. Is in the range of 4, more preferably in the range of 0.2 to 0.35.
（酸化物焼結体の相対密度）
酸化物焼結体の相対密度は、スパッタ時の表面のジュール発生と相関がある。酸化物焼結体が低密度であると、その酸化物焼結体をターゲットに加工してスパッタ成膜する際に、スパッタの成膜の経過に従って、表面にインジウムの低級酸化物である、突起状のノジュールと呼ばれる高抵抗部分が発生し、その後のスパッタ時に異常放電の起点となり易い。本発明では、組成の適正範囲や製造条件の適正化によって酸化物焼結体の相対密度を９８％以上とすることができ、この程度の高密度であれば、スパッタ時のノジュールによる悪影響は殆どない。相対密度は好ましくは９９％以上であり、より好ましくは９９．５％以上である。
なお、酸化物焼結体の相対密度は、酸化物焼結体を所定の形状に加工した後の重量と外形寸法より算出した密度を、その酸化物焼結体の理論密度で除することで求めることができる。 (Relative density of sintered oxide)
The relative density of the oxide sintered body has a correlation with the generation of joules on the surface during sputtering. When the oxide sintered body has a low density, when the oxide sintered body is processed into a target and formed into a sputter film, a projection that is a lower oxide of indium on the surface in accordance with the progress of the sputter film formation. A high resistance portion called a nodule is generated, and tends to be the starting point of abnormal discharge during subsequent sputtering. In the present invention, the relative density of the oxide sintered body can be set to 98% or more by optimizing the appropriate range of the composition and the manufacturing conditions. If this density is high, there is almost no adverse effect due to nodules during sputtering. Absent. The relative density is preferably 99% or more, more preferably 99.5% or more.
The relative density of the oxide sintered body is obtained by dividing the density calculated from the weight and outer dimensions after processing the oxide sintered body into a predetermined shape by the theoretical density of the oxide sintered body. Can be sought.
酸化物焼結体の相対密度は、スパッタ時の表面のジュール発生と相関がある。酸化物焼結体が低密度であると、その酸化物焼結体をターゲットに加工してスパッタ成膜する際に、スパッタの成膜の経過に従って、表面にインジウムの低級酸化物である、突起状のノジュールと呼ばれる高抵抗部分が発生し、その後のスパッタ時に異常放電の起点となり易い。本発明では、組成の適正範囲や製造条件の適正化によって酸化物焼結体の相対密度を９８％以上とすることができ、この程度の高密度であれば、スパッタ時のノジュールによる悪影響は殆どない。相対密度は好ましくは９９％以上であり、より好ましくは９９．５％以上である。
なお、酸化物焼結体の相対密度は、酸化物焼結体を所定の形状に加工した後の重量と外形寸法より算出した密度を、その酸化物焼結体の理論密度で除することで求めることができる。 (Relative density of sintered oxide)
The relative density of the oxide sintered body has a correlation with the generation of joules on the surface during sputtering. When the oxide sintered body has a low density, when the oxide sintered body is processed into a target and formed into a sputter film, a projection that is a lower oxide of indium on the surface in accordance with the progress of the sputter film formation. A high resistance portion called a nodule is generated, and tends to be the starting point of abnormal discharge during subsequent sputtering. In the present invention, the relative density of the oxide sintered body can be set to 98% or more by optimizing the appropriate range of the composition and the manufacturing conditions. If this density is high, there is almost no adverse effect due to nodules during sputtering. Absent. The relative density is preferably 99% or more, more preferably 99.5% or more.
The relative density of the oxide sintered body is obtained by dividing the density calculated from the weight and outer dimensions after processing the oxide sintered body into a predetermined shape by the theoretical density of the oxide sintered body. Can be sought.
（酸化物焼結体のバルク抵抗）
酸化物焼結体のバルク抵抗は、スパッタ時の異常放電の発生のし易さと相関があり、バルク抵抗が高いとスパッタ時に異常放電が発生し易い。本発明では、組成の適正範囲や製造条件の適正化によってバルク抵抗を３ｍΩｃｍ以下とすることができ、この程度の低バルク抵抗であれば、スパッタ時の異常放電発生への悪影響は殆どない。バルク抵抗は好ましくは２．７ｍΩｃｍ以下であり、より好ましくは２．５ｍΩｃｍ以下である。
なお、バルク抵抗は四探針法により抵抗率計を使用して測定することができる。 (Bulk resistance of sintered oxide)
The bulk resistance of the oxide sintered body has a correlation with the ease of occurrence of abnormal discharge during sputtering, and when the bulk resistance is high, abnormal discharge is likely to occur during sputtering. In the present invention, the bulk resistance can be reduced to 3 mΩcm or less by optimizing the appropriate range of composition and manufacturing conditions. With such a low bulk resistance, there is almost no adverse effect on the occurrence of abnormal discharge during sputtering. The bulk resistance is preferably 2.7 mΩcm or less, more preferably 2.5 mΩcm or less.
Bulk resistance can be measured using a resistivity meter by the four-probe method.
酸化物焼結体のバルク抵抗は、スパッタ時の異常放電の発生のし易さと相関があり、バルク抵抗が高いとスパッタ時に異常放電が発生し易い。本発明では、組成の適正範囲や製造条件の適正化によってバルク抵抗を３ｍΩｃｍ以下とすることができ、この程度の低バルク抵抗であれば、スパッタ時の異常放電発生への悪影響は殆どない。バルク抵抗は好ましくは２．７ｍΩｃｍ以下であり、より好ましくは２．５ｍΩｃｍ以下である。
なお、バルク抵抗は四探針法により抵抗率計を使用して測定することができる。 (Bulk resistance of sintered oxide)
The bulk resistance of the oxide sintered body has a correlation with the ease of occurrence of abnormal discharge during sputtering, and when the bulk resistance is high, abnormal discharge is likely to occur during sputtering. In the present invention, the bulk resistance can be reduced to 3 mΩcm or less by optimizing the appropriate range of composition and manufacturing conditions. With such a low bulk resistance, there is almost no adverse effect on the occurrence of abnormal discharge during sputtering. The bulk resistance is preferably 2.7 mΩcm or less, more preferably 2.5 mΩcm or less.
Bulk resistance can be measured using a resistivity meter by the four-probe method.
（酸化物焼結体の製造方法）
本発明に係る各種組成の酸化物焼結体は、例えば、原料である酸化インジウム、酸化マグネシウム等の各原料粉体の配合比や原料粉体の粒径、粉砕時間、焼結温度、焼結時間、焼結雰囲気ガス種類等の条件を調整することにより得ることができる。 (Method for manufacturing oxide sintered body)
The oxide sintered body having various compositions according to the present invention includes, for example, the mixing ratio of raw material powders such as indium oxide and magnesium oxide as raw materials, the particle size of the raw material powders, the pulverization time, the sintering temperature, and the sintering. It can be obtained by adjusting conditions such as time and kind of sintering atmosphere gas.
本発明に係る各種組成の酸化物焼結体は、例えば、原料である酸化インジウム、酸化マグネシウム等の各原料粉体の配合比や原料粉体の粒径、粉砕時間、焼結温度、焼結時間、焼結雰囲気ガス種類等の条件を調整することにより得ることができる。 (Method for manufacturing oxide sintered body)
The oxide sintered body having various compositions according to the present invention includes, for example, the mixing ratio of raw material powders such as indium oxide and magnesium oxide as raw materials, the particle size of the raw material powders, the pulverization time, the sintering temperature, and the sintering. It can be obtained by adjusting conditions such as time and kind of sintering atmosphere gas.
原料粉は平均粒径１～２μｍであることが望ましい。平均粒径が２μｍを超えると、焼結体の密度が向上し難くなるため、その原料粉単独又は混合粉として湿式微粉砕等を行って、平均粒径を約１μｍ程度に小さくすると良い。湿式混合粉砕前に焼結性の向上を目的として、仮焼することも有効である。一方、１μｍ未満の原料は入手し難く、また、あまり小さいと粒子間の凝集が起き易くなって扱い難くなる。ここで、原料粉の平均粒径はレーザ回折式の測定方法によって測定した値を指す。粉砕後の原料混合粉をスプレードライヤー等で造粒して流動性や成形性を高めた後に成型するのが好ましい。成型は通常の加圧成形や冷間静水圧加圧等の方法を採用することができる。
The raw material powder preferably has an average particle size of 1 to 2 μm. When the average particle diameter exceeds 2 μm, the density of the sintered body is difficult to improve. Therefore, wet pulverization or the like is performed as the raw material powder alone or as a mixed powder, and the average particle diameter is preferably reduced to about 1 μm. For the purpose of improving the sinterability before wet mixing and pulverization, it is also effective to perform calcination. On the other hand, raw materials having a size of less than 1 μm are difficult to obtain. Here, the average particle diameter of the raw material powder indicates a value measured by a laser diffraction measurement method. It is preferable to mold the pulverized raw material mixed powder after granulating it with a spray dryer or the like to improve fluidity and moldability. For molding, a method such as normal pressure molding or cold isostatic pressing can be employed.
その後、成形物を焼結して焼結体を得る。焼結は、１４００～１６００℃で２～２０時間行うことが好ましい。これにより、相対密度を９８％以上とすることができる。焼結温度が１４００℃未満では、密度が向上し難く、焼結温度が１６００℃を超えると、構成成分元素の揮発等により、焼結体の組成が変化したり、揮発による空隙発生による密度低下の原因となったりする。焼結時の雰囲気ガスには、大気を用いることができ、焼結体からの揮発抑制の効果によって、高密度の焼結体を得ることができる。但し、焼結体の組成によっては、雰囲気ガスを酸素としても充分高密度の焼結体を得ることもできる。
Thereafter, the molded product is sintered to obtain a sintered body. Sintering is preferably performed at 1400 to 1600 ° C. for 2 to 20 hours. Thereby, a relative density can be 98% or more. If the sintering temperature is less than 1400 ° C., the density is difficult to improve. If the sintering temperature exceeds 1600 ° C., the composition of the sintered body changes due to volatilization of constituent elements, or the density decreases due to void generation due to volatilization. It may cause. Air can be used as the atmosphere gas during sintering, and a high-density sintered body can be obtained due to the effect of suppressing volatilization from the sintered body. However, depending on the composition of the sintered body, a sufficiently high density sintered body can be obtained even if the atmospheric gas is oxygen.
（スパッタ成膜）
上記の様にして得られた酸化物焼結体は、研削や研磨等の加工を施すことによりスパッタリング用ターゲットとすることができ、これを使用して成膜することにより、当該ターゲットと同一組成をもつ酸化物膜を形成することができる。加工の際は、平面研削等の方法で表面を研削することによって、表面粗さ（Ｒａ）を５μｍ以下とすることが望ましい。表面粗さを小さくすることによって、異常放電の原因となるノジュール発生の起点を減少させることができる。 (Sputter deposition)
The oxide sintered body obtained as described above can be used as a sputtering target by performing processing such as grinding and polishing, and by using this film, the same composition as that of the target can be obtained. It is possible to form an oxide film having At the time of processing, it is desirable that the surface roughness (Ra) be 5 μm or less by grinding the surface by a method such as surface grinding. By reducing the surface roughness, the starting point of nodule generation that causes abnormal discharge can be reduced.
上記の様にして得られた酸化物焼結体は、研削や研磨等の加工を施すことによりスパッタリング用ターゲットとすることができ、これを使用して成膜することにより、当該ターゲットと同一組成をもつ酸化物膜を形成することができる。加工の際は、平面研削等の方法で表面を研削することによって、表面粗さ（Ｒａ）を５μｍ以下とすることが望ましい。表面粗さを小さくすることによって、異常放電の原因となるノジュール発生の起点を減少させることができる。 (Sputter deposition)
The oxide sintered body obtained as described above can be used as a sputtering target by performing processing such as grinding and polishing, and by using this film, the same composition as that of the target can be obtained. It is possible to form an oxide film having At the time of processing, it is desirable that the surface roughness (Ra) be 5 μm or less by grinding the surface by a method such as surface grinding. By reducing the surface roughness, the starting point of nodule generation that causes abnormal discharge can be reduced.
スパッタリング用ターゲットは、銅製等のバッキングプレートに貼り付けて、スパッタ装置内に設置して、適切な真空度、雰囲気ガス、スパッタパワー等の適切条件でスパッタすることで、ターゲットとほぼ同組成の膜を得ることができる。
The sputtering target is affixed to a backing plate made of copper or the like, placed in a sputtering apparatus, and sputtered under appropriate conditions such as an appropriate degree of vacuum, atmospheric gas, and sputtering power, so that the film has almost the same composition as the target. Can be obtained.
スパッタ法の場合、成膜前のチャンバー内到達真空度を、２×１０-4Ｐａ以下とするのが望ましい。圧力が高すぎると、残留雰囲気ガス中の不純物の影響によって、得られた膜の移動度が低下する可能性がある。
In the case of sputtering, it is desirable that the degree of vacuum reached in the chamber before film formation is 2 × 10 −4 Pa or less. If the pressure is too high, the mobility of the obtained film may decrease due to the influence of impurities in the residual atmospheric gas.
スパッタガスとして、アルゴン及び酸素の混合ガスを使用することができる。混合ガス中の酸素濃度を調整する方法としては、例えば、アルゴン１００％のガスボンベと、アルゴン中の酸素が２％のガスボンベを用いて、それぞれのガスボンベからチャンバーへの供給流量をマスフローで適宜設定することで行うことができる。ここで、混合ガス中の酸素濃度とは、酸素分圧／（酸素分圧＋アルゴン分圧）を意味するものであり、酸素の流量を酸素とアルゴンの流量の合計で除したものとも等しい。酸素濃度は所望のキャリア濃度に応じて適宜変更すればよいが、典型的には１～３％とすることができ、より典型的には１～２％とすることができる。
A mixed gas of argon and oxygen can be used as the sputtering gas. As a method for adjusting the oxygen concentration in the mixed gas, for example, a gas cylinder with 100% argon and a gas cylinder with 2% oxygen in argon are used, and the supply flow rate from each gas cylinder to the chamber is appropriately set by mass flow. Can be done. Here, the oxygen concentration in the mixed gas means oxygen partial pressure / (oxygen partial pressure + argon partial pressure), and is equal to the oxygen flow rate divided by the sum of oxygen and argon flow rates. The oxygen concentration may be appropriately changed according to the desired carrier concentration, but it can be typically 1 to 3%, more typically 1 to 2%.
スパッタガスの全圧は０．３～０．８Ｐａ程度とする。全圧がこれより低いと、プラズマ放電が立ち難くなり、立ったとしてもプラズマが不安定となってしまう。また、全圧がこれより高いと、成膜速度が遅くなり、生産性に悪影響を及ぼす等の不都合が生じる。
The total pressure of the sputtering gas is about 0.3 to 0.8 Pa. If the total pressure is lower than this, the plasma discharge is difficult to stand up, and even if it stands, the plasma becomes unstable. On the other hand, if the total pressure is higher than this, the film formation rate becomes slow, which causes inconveniences such as adversely affecting productivity.
スパッタパワーは、ターゲットサイズが６インチの場合、２００～１２００Ｗ程度で成膜する。スパッタパワーが小さすぎると、成膜速度が小さく、生産性に劣るし、逆に、大き過ぎると、ターゲットの割れ等の問題が生ずる。２００～１２００Ｗは、スパッタパワー密度に換算すると、１．１Ｗ／ｃｍ2～６．６Ｗ／ｃｍ2であり、３．２～４．５Ｗ／ｃｍ2とすることが望ましい。ここで、スパッタパワー密度とは、スパッタパワーをスパッタリングターゲットの面積で除したものであり、同じスパッタパワーでもスパッタリングターゲットサイズによって、スパッタリングターゲットが実際に受けるパワーが異なり、成膜速度が異なることから、スパッタリングターゲットに印加するパワーを統一的に表現するための指標である。
When the target size is 6 inches, the film is formed with a sputtering power of about 200 to 1200 W. If the sputtering power is too low, the film forming speed is low and the productivity is poor. Conversely, if the sputtering power is too high, problems such as cracking of the target occur. 200 ~ 1200 W when converted to a sputtering power density is 1.1W / cm 2 ~ 6.6W / cm 2, it is desirable that the 3.2 ~ 4.5W / cm 2. Here, the sputtering power density is a value obtained by dividing the sputtering power by the area of the sputtering target, and even with the same sputtering power, the power actually received by the sputtering target varies depending on the sputtering target size, and the film formation speed differs. It is an index for uniformly expressing the power applied to the sputtering target.
酸化物焼結体から膜を得る方法としては、真空蒸着法、イオンプレーティング法、ＰＬＤ（パルスレーザーディポジション）法等も用いることもできるが、産業上利用し易いのは、大面積、高速成膜、放電安定性等の要件を満たすＤＣマグネトロンスパッタ法である。
As a method for obtaining a film from an oxide sintered body, a vacuum deposition method, an ion plating method, a PLD (pulse laser deposition) method, or the like can be used. This is a DC magnetron sputtering method that satisfies requirements such as film formation and discharge stability.
スパッタ成膜時には、基板を加熱する必要がない。基板を加熱せずとも、比較的高移動度を得ることができるためであり、また、昇温のための時間やエネルギーを掛ける必要がない。基板を加熱することなくスパッタ成膜すると、得られる膜は非晶質となる。但し、基板を加熱することで、室温成膜後のアニールと同様の効果を得ることも期待できるので、基板加熱で成膜しても良い。
There is no need to heat the substrate during sputter deposition. This is because a relatively high mobility can be obtained without heating the substrate, and it is not necessary to spend time and energy for raising the temperature. When sputter deposition is performed without heating the substrate, the resulting film becomes amorphous. However, since the same effect as annealing after film formation at room temperature can be expected by heating the substrate, the film may be formed by heating the substrate.
（酸化物膜のキャリア濃度）
酸化物膜のキャリア濃度は、その膜をトランジスタのチャネル層に使用した際に、トランジスタの各種特性と相関がある。キャリア濃度が高すぎると、トランジスタのオフ時にも、微少漏れ電流が発生してしまい、オンオフ比が低下してしまう。一方、キャリア濃度が低すぎると、トランジスタを流れる電流が小さくなってしまう。本発明では、組成の適正範囲等によって、酸化物膜のキャリア濃度を１０16～１０18ｃｍ-3とすることができ、この範囲であれば、特性が良好なトランジスタを作製することができる。 (Carrier concentration of oxide film)
The carrier concentration of the oxide film correlates with various characteristics of the transistor when the film is used for the channel layer of the transistor. If the carrier concentration is too high, a minute leakage current is generated even when the transistor is turned off, and the on / off ratio is lowered. On the other hand, if the carrier concentration is too low, the current flowing through the transistor becomes small. In the present invention, the carrier concentration of the oxide film can be set to 10 16 to 10 18 cm −3 depending on an appropriate range of the composition and the like, and a transistor with favorable characteristics can be manufactured within this range.
酸化物膜のキャリア濃度は、その膜をトランジスタのチャネル層に使用した際に、トランジスタの各種特性と相関がある。キャリア濃度が高すぎると、トランジスタのオフ時にも、微少漏れ電流が発生してしまい、オンオフ比が低下してしまう。一方、キャリア濃度が低すぎると、トランジスタを流れる電流が小さくなってしまう。本発明では、組成の適正範囲等によって、酸化物膜のキャリア濃度を１０16～１０18ｃｍ-3とすることができ、この範囲であれば、特性が良好なトランジスタを作製することができる。 (Carrier concentration of oxide film)
The carrier concentration of the oxide film correlates with various characteristics of the transistor when the film is used for the channel layer of the transistor. If the carrier concentration is too high, a minute leakage current is generated even when the transistor is turned off, and the on / off ratio is lowered. On the other hand, if the carrier concentration is too low, the current flowing through the transistor becomes small. In the present invention, the carrier concentration of the oxide film can be set to 10 16 to 10 18 cm −3 depending on an appropriate range of the composition and the like, and a transistor with favorable characteristics can be manufactured within this range.
（酸化物膜の移動度）
移動度はトランジスタの特性の中でも、最も重要な特性の一つであり、酸化物半導体がトランジスタのチャネル層として使用される競合材料であるアモルファスシリコンの移動度である１ｃｍ2／Ｖｓ以上であることが望ましい。移動度は基本的には、高ければ高いほど良い。本発明に係る酸化物膜は組成の適正範囲等によって、１ｃｍ2／Ｖｓ以上の移動度を有することができ、好ましくは３ｃｍ2／Ｖｓ以上の移動度を有することができ、より好ましくは５ｃｍ2／Ｖｓ以上の移動度を有することができる。これによって、アモルファスシリコンより優れた特性となって、産業上の応用可能性がより高まる。 (Mobility of oxide film)
The mobility is one of the most important characteristics of the transistor, and the oxide semiconductor has a mobility of 1 cm 2 / Vs or more which is the mobility of amorphous silicon which is a competitive material used as a channel layer of the transistor. Is desirable. Basically, the higher the mobility, the better. The oxide film according to the present invention can have a mobility of 1 cm 2 / Vs or more, preferably a mobility of 3 cm 2 / Vs or more, more preferably 5 cm 2 depending on an appropriate range of the composition. It can have a mobility of / Vs or higher. Thereby, it becomes a characteristic superior to amorphous silicon, and industrial applicability is further increased.
移動度はトランジスタの特性の中でも、最も重要な特性の一つであり、酸化物半導体がトランジスタのチャネル層として使用される競合材料であるアモルファスシリコンの移動度である１ｃｍ2／Ｖｓ以上であることが望ましい。移動度は基本的には、高ければ高いほど良い。本発明に係る酸化物膜は組成の適正範囲等によって、１ｃｍ2／Ｖｓ以上の移動度を有することができ、好ましくは３ｃｍ2／Ｖｓ以上の移動度を有することができ、より好ましくは５ｃｍ2／Ｖｓ以上の移動度を有することができる。これによって、アモルファスシリコンより優れた特性となって、産業上の応用可能性がより高まる。 (Mobility of oxide film)
The mobility is one of the most important characteristics of the transistor, and the oxide semiconductor has a mobility of 1 cm 2 / Vs or more which is the mobility of amorphous silicon which is a competitive material used as a channel layer of the transistor. Is desirable. Basically, the higher the mobility, the better. The oxide film according to the present invention can have a mobility of 1 cm 2 / Vs or more, preferably a mobility of 3 cm 2 / Vs or more, more preferably 5 cm 2 depending on an appropriate range of the composition. It can have a mobility of / Vs or higher. Thereby, it becomes a characteristic superior to amorphous silicon, and industrial applicability is further increased.
本発明に係る酸化物半導体薄膜は例えば薄膜トランジスタの活性層として使用することができる。また、上記製造方法を使用して得られた薄膜トランジスタをアクティブ素子として使用し、アクティブマトリックス駆動表示パネルに利用することができる。
The oxide semiconductor thin film according to the present invention can be used, for example, as an active layer of a thin film transistor. In addition, the thin film transistor obtained by using the above manufacturing method can be used as an active element and used for an active matrix drive display panel.
以下に本発明の実施例を比較例と共に示すが、これらの実施例は本発明及びその利点をよりよく理解するために提供するものであり、発明が限定されることを意図するものではない。従って、本発明は、本発明の技術思想の範囲内で、実施例以外の態様あるいは変形を全て包含するものである。
EXAMPLES Examples of the present invention will be described below together with comparative examples, but these examples are provided for better understanding of the present invention and its advantages, and are not intended to limit the invention. Accordingly, the present invention encompasses all aspects or modifications other than the examples within the scope of the technical idea of the present invention.
下記の実施例及び比較例において、焼結体及び膜の物性は以下の方法によって測定した。
（ア）焼結体及び膜の組成
ＳＩＩナノテクノロジー社製型式ＳＰＳ３０００を用いてＩＣＰ（高周波誘導結合プラズマ）分析法によって求めた。
（イ）焼結体の相対密度
重量及び外形寸法の測定結果と、構成元素からの理論密度とにより求めた。
（ウ）焼結体のバルク抵抗
四探針法（ＪＩＳ Ｋ７１９４）により、ＮＰＳ（エヌピイエス）社製型式Σ－５＋装置を用いて求めた。
（エ）膜厚
段差計（Ｖｅｅｃｏ社製、型式Ｄｅｋｔａｋ８ ＳＴＹＬＵＳ ＰＲＯＦＩＬＥＲ）を用いて求めた。
（オ）膜のキャリア濃度及び移動度
成膜したガラス基板を約１０ｍｍ角に切り出し、四隅にインジウム電極をつけて、ホール測定装置（東陽テクニカ社製、型式Ｒｅｓｉｔｅｓｔ８２００）にセットして測定した。
（カ）膜の結晶又は非晶質構造
リガク社製ＲＩＮＴ－１１００Ｘ線回折装置を用いて結晶性を判定した。このＸ線回折によって、バックグランドレベル以上の有意なピークが認められなかったことをもって、非晶質と判断した。
（キ）粉体の平均粒径
粉体の平均粒径は、島津製作所製ＳＡＬＤ－３１００により測定した。 In the following Examples and Comparative Examples, the physical properties of the sintered bodies and films were measured by the following methods.
(A) Composition of sintered body and film It was determined by an ICP (high frequency inductively coupled plasma) analysis method using a model SPS3000 manufactured by SII Nanotechnology.
(A) Relative density of sintered body The relative density was determined from the measurement results of weight and outer dimensions and the theoretical density from the constituent elements.
(C) Bulk resistance of sintered body The bulk resistance was determined by a four-probe method (JIS K7194) using a model Σ-5 + apparatus manufactured by NPS.
(D) Film thickness It was determined using a step meter (Veeco, Model Dektak8 STYLUS PROFILER).
(E) Carrier concentration and mobility of film The formed glass substrate was cut into about 10 mm square, indium electrodes were attached to the four corners, and the measurement was carried out by setting in a Hall measuring device (manufactured by Toyo Technica, Model Reset 8200).
(F) Crystal or amorphous structure of film Crystallinity was determined using a RINT-1100 X-ray diffractometer manufactured by Rigaku Corporation. By this X-ray diffraction, a significant peak above the background level was not recognized, and it was judged to be amorphous.
(G) Average particle diameter of the powder The average particle diameter of the powder was measured by SALD-3100 manufactured by Shimadzu Corporation.
（ア）焼結体及び膜の組成
ＳＩＩナノテクノロジー社製型式ＳＰＳ３０００を用いてＩＣＰ（高周波誘導結合プラズマ）分析法によって求めた。
（イ）焼結体の相対密度
重量及び外形寸法の測定結果と、構成元素からの理論密度とにより求めた。
（ウ）焼結体のバルク抵抗
四探針法（ＪＩＳ Ｋ７１９４）により、ＮＰＳ（エヌピイエス）社製型式Σ－５＋装置を用いて求めた。
（エ）膜厚
段差計（Ｖｅｅｃｏ社製、型式Ｄｅｋｔａｋ８ ＳＴＹＬＵＳ ＰＲＯＦＩＬＥＲ）を用いて求めた。
（オ）膜のキャリア濃度及び移動度
成膜したガラス基板を約１０ｍｍ角に切り出し、四隅にインジウム電極をつけて、ホール測定装置（東陽テクニカ社製、型式Ｒｅｓｉｔｅｓｔ８２００）にセットして測定した。
（カ）膜の結晶又は非晶質構造
リガク社製ＲＩＮＴ－１１００Ｘ線回折装置を用いて結晶性を判定した。このＸ線回折によって、バックグランドレベル以上の有意なピークが認められなかったことをもって、非晶質と判断した。
（キ）粉体の平均粒径
粉体の平均粒径は、島津製作所製ＳＡＬＤ－３１００により測定した。 In the following Examples and Comparative Examples, the physical properties of the sintered bodies and films were measured by the following methods.
(A) Composition of sintered body and film It was determined by an ICP (high frequency inductively coupled plasma) analysis method using a model SPS3000 manufactured by SII Nanotechnology.
(A) Relative density of sintered body The relative density was determined from the measurement results of weight and outer dimensions and the theoretical density from the constituent elements.
(C) Bulk resistance of sintered body The bulk resistance was determined by a four-probe method (JIS K7194) using a model Σ-5 + apparatus manufactured by NPS.
(D) Film thickness It was determined using a step meter (Veeco, Model Dektak8 STYLUS PROFILER).
(E) Carrier concentration and mobility of film The formed glass substrate was cut into about 10 mm square, indium electrodes were attached to the four corners, and the measurement was carried out by setting in a Hall measuring device (manufactured by Toyo Technica, Model Reset 8200).
(F) Crystal or amorphous structure of film Crystallinity was determined using a RINT-1100 X-ray diffractometer manufactured by Rigaku Corporation. By this X-ray diffraction, a significant peak above the background level was not recognized, and it was judged to be amorphous.
(G) Average particle diameter of the powder The average particle diameter of the powder was measured by SALD-3100 manufactured by Shimadzu Corporation.
＜実施例１＞
酸化インジウム粉（平均粒径１．０μｍ）、酸化ケイ素粉（平均粒径１．０μｍ）、及び、酸化マグネシウム粉（平均粒径１．０μｍ）を金属元素の原子数比（Ｉｎ：Ｓｉ：Ｍｇ）が０．４：０．３：０．３となる様に秤量し、湿式混合粉砕した。粉砕後の混合粉の平均粒径は０．８μｍであった。この混合粉を、スプレードライヤーで造粒後、金型に充填し、加圧成形した後、大気雰囲気中１４５０℃の高温で１０時間焼結した。得られた焼結体を直径６インチ、厚さ６ｍｍの円盤状に加工してスパッタリングターゲットとした。当該ターゲットについて、重量と外形寸法との測定結果と理論密度から相対密度を算出したところ９９．５％であった。また、四探針法により測定した焼結体のバルク抵抗は２．２ｍΩｃｍであった。 <Example 1>
Indium oxide powder (average particle size: 1.0 μm), silicon oxide powder (average particle size: 1.0 μm), and magnesium oxide powder (average particle size: 1.0 μm) are mixed with an atomic ratio of metal elements (In: Si: Mg). ) Was 0.4: 0.3: 0.3, and wet mixed and pulverized. The average particle size of the mixed powder after pulverization was 0.8 μm. This mixed powder was granulated with a spray dryer, filled into a mold, pressed, and then sintered at 1450 ° C. for 10 hours in an air atmosphere. The obtained sintered body was processed into a disk shape having a diameter of 6 inches and a thickness of 6 mm to obtain a sputtering target. With respect to the target, the relative density was calculated from the measurement results of the weight and the external dimensions, and the theoretical density, which was 99.5%. Further, the bulk resistance of the sintered body measured by the four probe method was 2.2 mΩcm.
酸化インジウム粉（平均粒径１．０μｍ）、酸化ケイ素粉（平均粒径１．０μｍ）、及び、酸化マグネシウム粉（平均粒径１．０μｍ）を金属元素の原子数比（Ｉｎ：Ｓｉ：Ｍｇ）が０．４：０．３：０．３となる様に秤量し、湿式混合粉砕した。粉砕後の混合粉の平均粒径は０．８μｍであった。この混合粉を、スプレードライヤーで造粒後、金型に充填し、加圧成形した後、大気雰囲気中１４５０℃の高温で１０時間焼結した。得られた焼結体を直径６インチ、厚さ６ｍｍの円盤状に加工してスパッタリングターゲットとした。当該ターゲットについて、重量と外形寸法との測定結果と理論密度から相対密度を算出したところ９９．５％であった。また、四探針法により測定した焼結体のバルク抵抗は２．２ｍΩｃｍであった。 <Example 1>
Indium oxide powder (average particle size: 1.0 μm), silicon oxide powder (average particle size: 1.0 μm), and magnesium oxide powder (average particle size: 1.0 μm) are mixed with an atomic ratio of metal elements (In: Si: Mg). ) Was 0.4: 0.3: 0.3, and wet mixed and pulverized. The average particle size of the mixed powder after pulverization was 0.8 μm. This mixed powder was granulated with a spray dryer, filled into a mold, pressed, and then sintered at 1450 ° C. for 10 hours in an air atmosphere. The obtained sintered body was processed into a disk shape having a diameter of 6 inches and a thickness of 6 mm to obtain a sputtering target. With respect to the target, the relative density was calculated from the measurement results of the weight and the external dimensions, and the theoretical density, which was 99.5%. Further, the bulk resistance of the sintered body measured by the four probe method was 2.2 mΩcm.
上記で作製したスパッタリングターゲットを銅製のバッキングプレートにインジウムをロウ材として使用して貼り付けて、ＤＣマグネトロンスパッタ装置（ＡＮＥＬＶＡ製ＳＰＬ－５００スパッタ装置）に設置した。ガラス基板はコーニング１７３７を用いて、スパッタ条件を、基板温度：２５℃、到達圧力：１．２×１０-4Ｐａ、雰囲気ガス：Ａｒ９９％、酸素１％、スパッタ圧力（全圧）：０．５Ｐａ、投入電力５００Ｗとして、膜厚が約１００ｎｍの薄膜を作製した。酸化物半導体薄膜の成膜時には、異常放電は認められなかった。
The sputtering target prepared above was attached to a copper backing plate using indium as a brazing material, and was installed in a DC magnetron sputtering apparatus (APLVA SPL-500 sputtering apparatus). The glass substrate uses Corning 1737, and the sputtering conditions are as follows: substrate temperature: 25 ° C., ultimate pressure: 1.2 × 10 −4 Pa, atmospheric gas: Ar 99%, oxygen 1%, sputtering pressure (total pressure): 0. A thin film having a thickness of about 100 nm was prepared at 5 Pa and input power of 500 W. No abnormal discharge was observed during the formation of the oxide semiconductor thin film.
得られた膜のホール測定を行い、キャリア濃度及び移動度を求めた。また、Ｘ線回折による測定の結果、当該膜は非晶質であった。
The hole of the obtained film was measured to determine the carrier concentration and mobility. As a result of measurement by X-ray diffraction, the film was amorphous.
＜実施例２～実施例１２＞
原料粉の組成比を表１に記載のそれぞれの値となる様にした以外は、実施例１と同様にして、酸化物焼結体及び酸化物半導体薄膜を得た。それぞれの相対密度、バルク抵抗、キャリア濃度、移動度は、表１に記載の通りであった。また、焼結体及び膜の組成はそれぞれ原料粉の組成比と同一であった。これらの酸化物半導体薄膜の成膜時には、異常放電は認められなかった。 <Example 2 to Example 12>
An oxide sintered body and an oxide semiconductor thin film were obtained in the same manner as in Example 1 except that the composition ratio of the raw material powder was set to the respective values shown in Table 1. The relative density, bulk resistance, carrier concentration, and mobility of each were as shown in Table 1. The composition of the sintered body and the film was the same as the composition ratio of the raw material powder. No abnormal discharge was observed during the formation of these oxide semiconductor thin films.
原料粉の組成比を表１に記載のそれぞれの値となる様にした以外は、実施例１と同様にして、酸化物焼結体及び酸化物半導体薄膜を得た。それぞれの相対密度、バルク抵抗、キャリア濃度、移動度は、表１に記載の通りであった。また、焼結体及び膜の組成はそれぞれ原料粉の組成比と同一であった。これらの酸化物半導体薄膜の成膜時には、異常放電は認められなかった。 <Example 2 to Example 12>
An oxide sintered body and an oxide semiconductor thin film were obtained in the same manner as in Example 1 except that the composition ratio of the raw material powder was set to the respective values shown in Table 1. The relative density, bulk resistance, carrier concentration, and mobility of each were as shown in Table 1. The composition of the sintered body and the film was the same as the composition ratio of the raw material powder. No abnormal discharge was observed during the formation of these oxide semiconductor thin films.
＜比較例１～比較例１０＞
原料粉の組成比を表１に記載のそれぞれの値となる様にした以外は、実施例１と同様にして、酸化物焼結体及び酸化物半導体薄膜を得た。それぞれの相対密度、バルク抵抗、キャリア濃度、移動度は、表１に記載の通りであった。また、焼結体及び膜の組成はそれぞれ原料粉の組成比と同一であった。 <Comparative Examples 1 to 10>
An oxide sintered body and an oxide semiconductor thin film were obtained in the same manner as in Example 1 except that the composition ratio of the raw material powder was set to the respective values shown in Table 1. The relative density, bulk resistance, carrier concentration, and mobility of each were as shown in Table 1. The composition of the sintered body and the film was the same as the composition ratio of the raw material powder.
原料粉の組成比を表１に記載のそれぞれの値となる様にした以外は、実施例１と同様にして、酸化物焼結体及び酸化物半導体薄膜を得た。それぞれの相対密度、バルク抵抗、キャリア濃度、移動度は、表１に記載の通りであった。また、焼結体及び膜の組成はそれぞれ原料粉の組成比と同一であった。 <Comparative Examples 1 to 10>
An oxide sintered body and an oxide semiconductor thin film were obtained in the same manner as in Example 1 except that the composition ratio of the raw material powder was set to the respective values shown in Table 1. The relative density, bulk resistance, carrier concentration, and mobility of each were as shown in Table 1. The composition of the sintered body and the film was the same as the composition ratio of the raw material powder.
実施例１～１２では、２価の金属イオン（Ｘ2+）の例としてＭｇ及びＣａを、３価の金属イオン（Ｙ3+）の例としてＢを、４価の金属イオン（Ｚ4+）の例としてＳｉを含んだ酸化物焼結体を作製した。しかしながら、２価の金属イオン（Ｘ2+）としてＣｏ又はＭｎを、３価の金属イオン（Ｙ3+）としてＹ又はＣｒを、４価の金属イオン（Ｚ4+）としてＧｅ、Ｔｉ又はＺｒを含んだ酸化物焼結体を作製しても、それぞれ価数が同じであるイオンを用いているため、実施例１～１２と同様の効果を奏するものと解される。
In Examples 1 to 12, Mg and Ca are used as examples of divalent metal ions (X 2+ ), B is used as an example of trivalent metal ions (Y 3+ ), and tetravalent metal ions (Z 4+ are used). As an example, an oxide sintered body containing Si was prepared. However, Co or Mn as a divalent metal ion (X 2+ ), Y or Cr as a trivalent metal ion (Y 3+ ), Ge, Ti or Zr as a tetravalent metal ion (Z 4+ ) Even when an oxide sintered body containing the same is used, since ions having the same valence are used, it is understood that the same effects as those of Examples 1 to 12 are obtained.
実施例１～１２では、キャリア濃度が１０16～１０18ｃｍ-3の範囲内にあり、且つ、移動度が１ｃｍ2／Ｖｓ以上であった。
一方、比較例１，４，６～１０では、キャリア濃度が１０16ｃｍ-3未満であった。
また、比較例１，４，６，８，１０では、移動度が１ｃｍ2／Ｖｓ未満であった。
また、比較例２，３，５では、キャリア濃度が１０18ｃｍ-3超であった。 In Examples 1 to 12, the carrier concentration was in the range of 10 16 to 10 18 cm −3 and the mobility was 1 cm 2 / Vs or more.
On the other hand, in Comparative Examples 1, 4, 6 to 10, the carrier concentration was less than 10 16 cm −3 .
In Comparative Examples 1, 4, 6, 8, and 10, the mobility was less than 1 cm 2 / Vs.
In Comparative Examples 2, 3, and 5, the carrier concentration was more than 10 18 cm −3 .
一方、比較例１，４，６～１０では、キャリア濃度が１０16ｃｍ-3未満であった。
また、比較例１，４，６，８，１０では、移動度が１ｃｍ2／Ｖｓ未満であった。
また、比較例２，３，５では、キャリア濃度が１０18ｃｍ-3超であった。 In Examples 1 to 12, the carrier concentration was in the range of 10 16 to 10 18 cm −3 and the mobility was 1 cm 2 / Vs or more.
On the other hand, in Comparative Examples 1, 4, 6 to 10, the carrier concentration was less than 10 16 cm −3 .
In Comparative Examples 1, 4, 6, 8, and 10, the mobility was less than 1 cm 2 / Vs.
In Comparative Examples 2, 3, and 5, the carrier concentration was more than 10 18 cm −3 .
Claims (9)
- ３価のインジウムイオン（Ｉｎ3+）と、２価の金属イオン（Ｘ2+）（但し、ＸはＭｇ、Ｃａ、Ｃｏ及びＭｎから選択される１種以上の元素を表す。）と、３価の金属イオン（Ｙ3+）（但し、ＹはＢ、Ｙ、Ｃｒから選択される１種以上の元素を表す。）又は４価の金属イオン（Ｚ4+）（但し、ＺはＳｉ、Ｇｅ、Ｔｉ、Ｚｒから選択される１種以上の元素を表す。）と、酸素イオン（Ｏ2-）とからなり、
３価のインジウムイオン（Ｉｎ3+）、２価の金属イオン（Ｘ2+）、３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の原子数比がそれぞれ、
０．２≦［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．８、
０．１≦［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５、及び、
０．１≦｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５
を満たす酸化物焼結体。 A trivalent indium ion (In 3+ ), a divalent metal ion (X 2+ ) (where X represents one or more elements selected from Mg, Ca, Co and Mn), and 3 A valent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y, Cr) or a tetravalent metal ion (Z 4+ ) (where Z is Si, Represents one or more elements selected from Ge, Ti and Zr.) And oxygen ions (O 2− ),
The atomic ratio of trivalent indium ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) is Respectively,
0.2 ≦ [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.8,
0.1 ≦ [X 2+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5, and
0.1 ≦ {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5
An oxide sintered body satisfying the requirements. - 相対密度が９８％以上である請求項１に記載の酸化物焼結体。 The oxide sintered body according to claim 1, wherein the relative density is 98% or more.
- バルク抵抗が３ｍΩ以下である請求項１又は２に記載の酸化物焼結体。 The oxide sintered body according to claim 1 or 2, wherein the bulk resistance is 3 mΩ or less.
- ３価のインジウムイオン（Ｉｎ3+）と、２価の金属イオン（Ｘ2+）（但し、ＸはＭｇ、Ｃａ、Ｃｏ及びＭｎから選択される１種以上の元素を表す。）と、３価の金属イオン（Ｙ3+）（但し、ＹはＢ、Ｙ、Ｃｒから選択される１種以上の元素を表す。）又は４価の金属イオン（Ｚ4+）（但し、ＺはＳｉ、Ｇｅ、Ｔｉ、Ｚｒから選択される１種以上の元素を表す。）と、酸素イオン（Ｏ2-）とからなり、
３価のインジウムイオン（Ｉｎ3+）、２価の金属イオン（Ｘ2+）、３価の金属イオン（Ｙ3+）、及び、４価の金属イオン（Ｚ4+）の原子数比がそれぞれ、
０．２≦［Ｉｎ3+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．８、
０．１≦［Ｘ2+］／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５、及び、
０．１≦｛［Ｙ3+］＋［Ｚ4+］｝／｛［Ｉｎ3+］＋［Ｘ2+］＋［Ｙ3+］＋［Ｚ4+］｝≦０．５
を満たす酸化物半導体薄膜。 A trivalent indium ion (In 3+ ), a divalent metal ion (X 2+ ) (where X represents one or more elements selected from Mg, Ca, Co and Mn), and 3 A valent metal ion (Y 3+ ) (where Y represents one or more elements selected from B, Y, Cr) or a tetravalent metal ion (Z 4+ ) (where Z is Si, Represents one or more elements selected from Ge, Ti and Zr.) And oxygen ions (O 2− ),
The atomic ratio of trivalent indium ion (In 3+ ), divalent metal ion (X 2+ ), trivalent metal ion (Y 3+ ), and tetravalent metal ion (Z 4+ ) is Respectively,
0.2 ≦ [In 3+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.8,
0.1 ≦ [X 2+ ] / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5, and
0.1 ≦ {[Y 3+ ] + [Z 4+ ]} / {[In 3+ ] + [X 2+ ] + [Y 3+ ] + [Z 4+ ]} ≦ 0.5
An oxide semiconductor thin film that meets the requirements. - 非晶質である請求項４に記載の酸化物半導体薄膜。 The oxide semiconductor thin film according to claim 4, which is amorphous.
- キャリア濃度が１０16～１０18ｃｍ-3である請求項４又は５に記載の酸化物半導体薄膜。 6. The oxide semiconductor thin film according to claim 4, wherein the carrier concentration is 10 16 to 10 18 cm −3 .
- 移動度が１ｃｍ2／Ｖｓ以上である請求項４～６の何れかに記載の酸化物半導体薄膜。 The oxide semiconductor thin film according to any one of claims 4 to 6, which has a mobility of 1 cm 2 / Vs or more.
- 請求項４～７の何れかに記載の酸化物半導体薄膜を活性層として備えた薄膜トランジスタ。 A thin film transistor comprising the oxide semiconductor thin film according to any one of claims 4 to 7 as an active layer.
- 請求項８に記載の薄膜トランジスタを備えたアクティブマトリックス駆動表示パネル。 An active matrix drive display panel comprising the thin film transistor according to claim 8.
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| JPH0813140A (en) * | 1994-07-04 | 1996-01-16 | Hitachi Metals Ltd | Indium oxide sputtering target, its production, indium oxide film, and production of indium oxide film |
| JPH09209134A (en) * | 1996-01-31 | 1997-08-12 | Idemitsu Kosan Co Ltd | Target and its production |
| WO2010032432A1 (en) * | 2008-09-19 | 2010-03-25 | 出光興産株式会社 | Sintered body containing yttrium oxide, and sputtering target |
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| JP4457669B2 (en) * | 2004-01-08 | 2010-04-28 | 東ソー株式会社 | Sputtering target and manufacturing method thereof |
| JP2006160535A (en) * | 2004-12-02 | 2006-06-22 | Sumitomo Metal Mining Co Ltd | Oxide sintered compact, sputtering target and transparent conductive thin film |
| JP2007238365A (en) * | 2006-03-07 | 2007-09-20 | Mitsui Mining & Smelting Co Ltd | Oxide sintered compact, its manufacturing method, sputtering target and transparent conductive film |
| WO2009044893A1 (en) * | 2007-10-03 | 2009-04-09 | Mitsui Mining & Smelting Co., Ltd. | Indium oxide transparent conductive film and method for producing the same |
| JP5377328B2 (en) * | 2007-12-25 | 2013-12-25 | 出光興産株式会社 | Tin oxide-magnesium oxide sputtering target and transparent semiconductor film |
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| JPH0813140A (en) * | 1994-07-04 | 1996-01-16 | Hitachi Metals Ltd | Indium oxide sputtering target, its production, indium oxide film, and production of indium oxide film |
| JPH09209134A (en) * | 1996-01-31 | 1997-08-12 | Idemitsu Kosan Co Ltd | Target and its production |
| WO2010032432A1 (en) * | 2008-09-19 | 2010-03-25 | 出光興産株式会社 | Sintered body containing yttrium oxide, and sputtering target |
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