WO2012018062A1 - カーボンナノチューブデバイス、カーボンナノチューブ製造方法およびカーボンナノチューブ製造装置 - Google Patents
カーボンナノチューブデバイス、カーボンナノチューブ製造方法およびカーボンナノチューブ製造装置 Download PDFInfo
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- WO2012018062A1 WO2012018062A1 PCT/JP2011/067824 JP2011067824W WO2012018062A1 WO 2012018062 A1 WO2012018062 A1 WO 2012018062A1 JP 2011067824 W JP2011067824 W JP 2011067824W WO 2012018062 A1 WO2012018062 A1 WO 2012018062A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C3/00—Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids
- H01C3/14—Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids the resistive element being formed in two or more coils or loops continuously wound as a spiral, helical or toroidal winding
- H01C3/20—Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids the resistive element being formed in two or more coils or loops continuously wound as a spiral, helical or toroidal winding wound on cylindrical or prismatic base
Definitions
- the present invention relates to a carbon nanotube device, a carbon nanotube manufacturing method, and a carbon nanotube manufacturing apparatus.
- Patent Document 1 discloses a capacitor having a structure in which carbon nanotubes are formed on upper and lower surfaces of a substrate facing each other. According to this, the length of the carbon nanotube formed on the upper surface of the substrate and the length of the carbon nanotube formed on the lower surface of the substrate are the same.
- Patent Document 2 a carbon nanotube manufacturing method is provided with an installation portion for setting a substrate in a reaction chamber, and a single pipe-like gas supply pipe facing the substrate installed in the installation portion with an interval at the upper side. An apparatus is disclosed. According to this, the gas supply pipe is bent. A plurality of outlets are formed in the peripheral wall of the gas supply pipe.
- Patent Document 3 discloses a carbon nanotube manufacturing apparatus that supplies a reaction gas along a direction substantially parallel to the upper and lower surfaces of a flat substrate installed in a reaction chamber, and forms carbon nanotubes on the upper and lower surfaces of the substrate. It is disclosed. JP 2007-48907 A JP, 2008-137831, A JP, 2004-332093, A
- the first carbon nanotube and the second carbon nanotube are formed on the substrate so as to face each other in opposite directions.
- the properties such as the length of the first carbon nanotube and the second carbon nanotube are basically the same as each other.
- the present invention has been made in view of the above-described circumstances, and provides a novel carbon nanotube device that is advantageous for carrying the first carbon nanotube and the second carbon nanotube having different properties and hybridizing the properties. As an issue. Furthermore, it is possible to provide a novel carbon nanotube manufacturing method and a carbon nanotube manufacturing apparatus capable of suppressing the dispersion of carbon nanotubes formed on the same carbon nanotube formation surface as long as the carbon nanotube formation surface is the same among objects. It will be an issue.
- the carbon nanotube device comprises an object having a first carbon nanotube formation surface and a second carbon nanotube formation surface, a first carbon nanotube formed on a first carbon nanotube formation surface of the object, and an object A carbon nanotube element is provided which comprises a second carbon nanotube formed on the second carbon nanotube formation surface and having different properties with respect to the first carbon nanotube.
- the property means physical property and / or chemical property.
- the carbon nanotube device according to the present invention can have both the performance by the first carbon nanotube and the performance by the second carbon nanotube. It is advantageous for hybridizing the characteristics of the device.
- the carbon nanotube device according to the present invention can be applied to energy devices such as electric double layer capacitors, lithium ion capacitors, fuel cells, lithium cells, solar cells and the like.
- the method for producing carbon nanotubes according to aspect 2 of the present invention comprises (i) (ia) preparing an object having a carbon nanotube-formed surface for forming carbon nanotubes, and (ib) accommodating the object And a gas supply chamber extending along a surface direction of the carbon nanotube-formed surface extending while facing the carbon nanotube-formed surface of the object accommodated in the reaction chamber with a gap therebetween, A gas passage forming member having a plurality of outlets for communicating the supply chamber with the reaction chamber and blowing out the reaction gas of the gas supply chamber into the reaction chamber; (ic) a carbon nanotube forming surface of the object, a gas passage forming member, Preparing a heating source for heating at least one of the reaction gases to the carbon nanotube formation temperature; By supplying the reaction gas to the gas supply chamber in a state where at least one of the tube forming surface, the gas passage forming member, and the reaction gas is heated to the carbon nanotube forming temperature, carbon nanotube formation of an object in the reaction chamber is performed.
- the reaction gas in the gas supply chamber is blown out from the blowout port toward the carbon nanotube-forming surface of the object along the direction intersecting the surface direction in which the surface extends, and the carbon nanotube is formed on the carbon nanotube-forming surface of the object And a step of forming a carbon nanotube to be formed.
- the gas supply chamber is extended along the surface direction in which the carbon nanotube formation surface extends while facing the carbon nanotube formation surface of the object accommodated in the reaction chamber with a space.
- the plurality of outlets communicate the gas supply chamber with the reaction chamber, and blow the reaction gas in the gas supply chamber toward the target in the reaction chamber. For this reason, when blowing out the reaction gas, the shortest distance L from each outlet to the target surface on which the carbon nanotube is formed is as equal as possible with respect to the shortest distance L from each outlet to the target surface on which the carbon nanotube is formed. It is done. For this reason, in the same carbon nanotube formation surface among objects, variation in the properties of the carbon nanotube formed on each portion of the carbon nanotube formation surface is reduced.
- the carbon nanotube production apparatus is a carbon nanotube production apparatus for producing carbon nanotubes on an object having a carbon nanotube formation surface for forming carbon nanotubes, and (i) a substrate and And (ii) a facing wall provided on the substrate and extending along the surface direction of the object on which the carbon nanotube-formed surface of the object extends while facing the surface of the object on which the carbon nanotube is formed spaced apart. And a gas supply chamber extending along a surface direction in which the carbon nanotube-formed surface of the object extends using a facing wall and communicating with the blowout port.
- a gas passage forming member having a gas discharge passage communicating with the reaction chamber, and (iii) a carbon nanotube forming surface of an object provided on a base, Scan path forming member comprises a heat source for heating at least one of carbon nanotube formation temperature of the reaction gas.
- the gas supply chamber is extended along the surface direction in which the carbon nanotube formation surface extends while facing the carbon nanotube formation surface of the object accommodated in the reaction chamber with a space.
- the plurality of outlets communicate the gas supply chamber with the reaction chamber, and blow the reaction gas in the gas supply chamber toward the target in the reaction chamber. For this reason, when blowing out the reaction gas, the shortest distance L from each outlet to the target surface on which the carbon nanotube is formed is as equal as possible with respect to the shortest distance L from each outlet to the target surface on which the carbon nanotube is formed. It is done. For this reason, in the same carbon nanotube formation surface, variation in growth of carbon nanotubes formed on the same carbon nanotube formation surface is reduced.
- the carbon nanotube device of the present invention properties (for example, length, diameter, number per unit area, number of layers, crystallinity, amount of defects, amount of functional group, amount of functional group, density, weight, etc. of carbon nanotube) It is advantageous to mount the first carbon nanotube and the second carbon nanotube different in at least one of the distribution etc. and to hybridize the characteristics of the device.
- the gas supply chamber extends the carbon nanotube forming surface while facing the carbon nanotube forming surface of the object accommodated in the reaction chamber with an interval. It extends along the surface direction to be provided.
- the plurality of outlets communicate the gas supply chamber with the reaction chamber, and blow the reaction gas in the gas supply chamber toward the target in the reaction chamber. For this reason, when blowing out the reaction gas, the shortest distance L from each outlet to the target surface on which the carbon nanotube is formed is as equal as possible with respect to the shortest distance L from each outlet to the target surface on which the carbon nanotube is formed. It is done. For this reason, in the same carbon nanotube formation surface, variation in growth of carbon nanotubes formed on the same carbon nanotube formation surface is reduced.
- FIG. 10 is a cross-sectional view of the carbon nanotube manufacturing apparatus along a different direction according to manufacturing mode 1;
- FIG. 7 is a plan view of the main part of the carbon nanotube manufacturing apparatus according to manufacturing mode 1;
- It is sectional drawing which concerns on a manufacturing form 1, and shows the relationship between a 1st blower outlet and a 2nd blower outlet, and an object.
- It is an electron micrograph which shows the property of the carbon nanotube currently formed on the object concerning the comparative example 1.
- FIG. It is an electron micrograph which shows the property of the carbon nanotube currently formed on the object concerning Example 1.
- FIG. 10 is a cross-sectional view of the carbon nanotube manufacturing apparatus along a different direction according to manufacturing mode 1
- FIG. 7 is a plan view of the main part of the carbon nanotube manufacturing apparatus according to manufacturing mode 1
- It is sectional drawing which concerns on a manufacturing form 1, and shows the relationship between a 1st blower outlet and a 2nd blower outlet, and an object.
- It is an
- FIG. 16 is a cross-sectional view of the carbon nanotube manufacturing apparatus along a different direction according to manufacturing mode 5; It is sectional drawing which concerns on a manufacturing form 6, and shows the concept of a carbon nanotube manufacturing apparatus. It is sectional drawing which concerns on a manufacturing form 7 and shows the concept of a carbon nanotube manufacturing apparatus. It is sectional drawing which concerns on Embodiment 2 and shows the concept of a carbon nanotube device.
- Embodiment 2 It is sectional drawing which concerns on Embodiment 2 and shows the concept of a carbon nanotube device. It is sectional drawing which concerns on Embodiment 3 and shows the concept of a carbon nanotube device. It is sectional drawing which concerns on Embodiment 3 and shows the concept of a carbon nanotube device. It is sectional drawing which concerns on Embodiment 4 and shows the concept of a carbon nanotube device. It is sectional drawing which concerns on Embodiment 5 and shows the concept of a carbon nanotube device.
- 1 is an object (object), 11 is a first carbon nanotube formation surface, 12 is a second carbon nanotube formation surface, 101 is a first carbon nanotube, 102 is a second carbon nanotube, 108 is a carbon nanotube element, 14 is a side end surface , 15 is a side end face, 2 is an apparatus main body (substrate), 3 is a passage forming member, 30 is a reaction chamber, 31 is a first facing wall, 32 is a second facing wall, 33 is a first gas discharge passage, 34 is a first 2 gas discharge passage, 38 is a first outlet, 39 is a second outlet, 41 is a first outlet, 42 is a second outlet, 51 is a first gas supply chamber, 52 is a second gas supply chamber, 71 is a first Reference numeral 72 denotes a second heating source, 81 denotes a first supply passage, and 82 denotes a second supply passage.
- the carbon nanotube device has a carbon nanotube element.
- the carbon nanotube element comprises an object having a first carbon nanotube forming surface and a second carbon nanotube forming surface facing each other, a first carbon nanotube formed on the first carbon nanotube forming surface of the object, and a second carbon of the object. And a second carbon nanotube formed on the nanotube formation surface.
- the first carbon nanotube and the second carbon nanotube are different from each other in physical properties (including shape and size) and / or chemical properties.
- the properties refer to the length, diameter (thickness), number per unit area, total number of carbon nanotubes, number of layers of carbon nanotubes (cylindrical structure with one layer of carbon nanotubes, multi-layered cylindrical structure such as two layers, etc. Etc.), crystallinity (G / D ratio: ratio of G band to D band in Raman spectroscopy), defect amount, functional group type, functional group amount, density (density as carbon nanotube group), weight, these At least one of the distribution of
- the electrode surface area is large and the supportability is good.
- the diameter of the carbon nanotube is large, in general, the supportability is good.
- the diameter of the carbon nanotube is small, the impregnating property of the electrolytic solution is high, and the ion conductivity contained in the electrolytic solution is high.
- the number of carbon nanotubes is large, the surface area of the electrode is large and the supportability is good.
- the number of carbon nanotubes is small, the gap between adjacent carbon nanotubes becomes large, and in general, the impregnating property of the electrolytic solution becomes high, and the ion conductivity contained in the electrolytic solution becomes high.
- the deficient portion of the graphene sheet improves the supportability.
- the crystallinity of the carbon nanotube is high, the graphene sheet becomes good and the conductivity becomes high.
- the density of carbon nanotubes is high, the surface area of the electrode is generally large and the supportability is good.
- the density of the carbon nanotubes is low, generally, the impregnating property of the electrolytic solution is high, and the ion conductivity contained in the electrolytic solution is high.
- the weight of the carbon nanotube is large, the supportability is high. The distribution of carbon nanotubes affects the supportability.
- having good supportability means that functional materials such as particles can be easily attached to carbon nanotubes.
- functional materials such as particles can be easily attached to carbon nanotubes.
- the negative electrode potential is lowered and the capacity performance is increased by the good supportability of lithium titanate particles (potential control particles).
- the oxidation performance or reduction reaction at the electrode is promoted by the good supporting property of platinum particles (catalyst particles), and the output performance is increased.
- the surface roughness of an object such as a substrate is supported on the first carbon nanotube-formed surface and the second carbon nanotube-formed surface of the object.
- Catalyst loading amount amount, catalyst composition, catalyst density, diameter of catalyst, flow rate per unit time of reaction gas, flow rate ratio of reaction gas between first carbon nanotube formation surface and second carbon nanotube formation surface, flow velocity, reaction gas species, At least one of the following factors: temperature of reaction gas, flow direction of reaction gas, size / pitch of reaction gas inlet, temperature at first carbon nanotube formation surface and second carbon nanotube formation surface, output of heating source, etc. It is preferable to change the By relatively lowering the temperature of the object and / or the temperature of the reaction gas, the defects in the graphene sheet (the network formed by combining a plurality of carbon atoms) are relatively increased, and the crystallinity of the carbon nanotube is increased. It can be relatively reduced.
- the density of carbon nanotubes is susceptible to the number of layers of carbon nanotubes and / or the number of carbon nanotubes per unit area. As the number of layers and / or number increases, the density increases.
- the weight of carbon nanotubes is susceptible to the density of carbon nanotubes and / or the length of carbon nanotubes. When the density is high and the length is long, the weight of the carbon nanotube increases.
- a plurality of carbon nanotube elements are juxtaposed so that the first carbon nanotube and the second carbon nanotube of two adjacent carbon nanotube elements are arranged to face each other.
- the object preferably has conductivity, and copper, copper alloy, iron, iron alloy (including stainless steel), titanium, titanium alloy, aluminum, aluminum alloy are exemplified. Be done. If the device is not an electrical component, it may not be conductive.
- the carbon nanotube device is not limited to a capacitor, and can be applied to devices such as a fuel cell, a lithium cell, a solar cell, and a metal-air cell. According to the present embodiment, it is possible to provide a novel carbon nanotube device which is equipped with the first carbon nanotube and the second carbon nanotube which have different properties from each other, and which is advantageous for hybridizing the characteristics of the device.
- FIGS. 13 and 14 show a carbon nanotube device according to a second embodiment.
- the carbon nanotube device constitutes a capacitor for storing electric charge, and is configured by assembling a plurality of carbon nanotube elements 108 so as to connect in parallel CNTs having different lengths. As shown in FIG.
- a single carbon nanotube element 108 includes (i) an object 1 (object) having flat first and second carbon nanotube forming surfaces 11 and 12 facing each other, ii) A plurality of first carbon nanotubes 101 formed parallel to extend substantially perpendicularly to the first carbon nanotube formation surface 11 so as to be erected on the first carbon nanotube formation surface 11 of the object 1; iii) A plurality of second carbon nanotubes 102 are formed so as to extend substantially perpendicularly to the second carbon nanotube forming surface 12 so as to be erected on the second carbon nanotube forming surface 12 of the object 1 .
- Such a carbon nanotube element 108 is sealed in the housing 200 together with the electrolyte solution 205.
- the electrolyte solution 205 a known electrolyte solution used in a capacitor can be adopted.
- the object 1 has a plate shape, is made of a conductive metal such as iron, iron alloy, copper, copper alloy, etc., and has conductivity.
- the first carbon nanotube 101 (CNT) and the second carbon nanotube 102 (CNT) basically have the same properties except for the length. However, the length of the first carbon nanotube 101 is longer than the length of the second carbon nanotube 102.
- the long first carbon nanotube 101 has a large surface area and a large amount of the substance to be supported.
- the second carbon nanotubes 102 having a short length can realize an electrode with improved ion conductivity.
- a plurality of carbon nanotube elements 108 are arranged in parallel along the arrow EA direction.
- the carbon nanotube element 108 shown in FIG. 13 is used as the common object 1 with a plurality of positive carbon nanotube elements 108 p having the first carbon nanotube 101 and the second carbon nanotube 102 formed on the common object 1 as the positive electrode side.
- a plurality of negative electrode carbon nanotube elements 108 n having the formed first carbon nanotubes 101 and second carbon nanotubes 102 on the negative electrode side are formed.
- the objects 1 of the plurality of carbon nanotube elements 108p for positive electrode are electrically connected to the positive electrode side (+) by the first electrical conduction path 1f.
- the objects 1 of the plurality of negative electrode carbon nanotube elements 108 n are electrically connected to the negative electrode side ( ⁇ ) by the second electrical conduction path 1 s.
- the first carbon nanotubes 101 and the second carbon nanotubes 102 are symmetrically arranged via the separators 300f and 300s. It is assumed. That is, as shown in FIG. 13, with the two carbon nanotube elements 108 (108n, 108p) adjacent to each other, the objects 1 adjacent to each other are electrically connected to different poles. Therefore, the elements 108 (108n, 108p) adjacent to each other are electrically connected to different poles respectively.
- the first carbon nanotube 101, the first carbon nanotube 101, the second carbon nanotube 102, and the second carbon nanotube 102 are arranged in this order.
- the first carbon nanotubes 101 and 101 having the same properties (basically the same length) face each other as the different poles via the separator 300f.
- the second carbon nanotubes 102, 102 having the same properties (basically the same length) face each other as the different poles via the separator 300s.
- the first carbon nanotubes 101 and 101 having the same properties (the same length) and different poles face each other via the separator 300 f.
- the second carbon nanotubes 102 and 102 of the same property (the same length) and different poles are facing each other via the separator 300 s.
- parallel connection of carbon nanotubes 101 and 102 having different lengths is formed.
- the length of the first carbon nanotube 101 is longer than the length of the second carbon nanotube 102.
- the long first carbon nanotubes 101 face each other through the first separator 300f, and the surface area is relatively large, so that they constitute a high-capacity single cell.
- the short second carbon nanotubes 102 face each other through the second separator 300s and have a low electrical resistance, and thus constitute a high-power single cell.
- the separators 300 f and 300 s have permeability to anions and cations dissolved in the electrolytic solution, and also have high electrical insulation.
- the output function and the capacity function at the cell level And both can be hybridized. That is, as shown in FIG. 14, the carbon nanotube element 108 having the high output function and the carbon nanotube element 108 having the high capacity function can be hybridized.
- the first carbon nanotube 101 and the second carbon nanotube 102 may be formed by a method in which the reaction gas flows along a direction substantially perpendicular to the surface direction of the object 1.
- the first carbon nanotube 101 and the second carbon nanotube 102 may be formed by a method of flowing a reaction gas along the surface direction of the object 1.
- FIGS. 15A and 15B show a carbon nanotube device according to a third embodiment.
- the carbon nanotube device constitutes a capacitor for storing electric charge, and is constructed by assembling a plurality of carbon nanotube elements 108. As shown in FIG.
- the carbon nanotube element 108 includes (i) an object 1 having flat first and second carbon nanotube surfaces 11 and 12 facing each other; (1) A first carbon nanotube 101 formed to extend substantially perpendicularly to the first carbon nanotube forming surface 11 so as to be erected on the carbon nanotube forming surface 11; (iii) a second carbon nanotube forming surface 12 of the object 1 And a second carbon nanotube 102 formed so as to extend substantially perpendicularly to the second carbon nanotube forming surface 12 so as to stand upright. As shown in FIG. 15A, with respect to the adjacent carbon nanotube element 108, the first carbon nanotube 101 and the second carbon nanotube 102 are arranged in an asymmetric arrangement with each other via a not-shown separator.
- the adjacent carbon nanotube elements 108 have different properties, and the first carbon nanotubes 101 and the second carbon nanotubes 102 of different polarities are arranged in series via the unillustrated separators. Thus, series connection of carbon nanotubes different in crystallinity is formed. Therefore, as shown in FIG. 15A, the second carbon nanotube 102, the first carbon nanotube 101, the second carbon nanotube 102, and the first carbon nanotube 101 are arranged in the direction in which the plurality of elements 108 are juxtaposed (arrow EA direction). , The second carbon nanotube 102, and the first carbon nanotube 101 in this order. As shown in FIG. 15B, a plurality of carbon nanotube elements 108 are arranged in parallel. The carbon nanotube element 108 shown in FIG.
- the object 1 is in the form of a plate forming a substrate, is made of a conductive metal such as iron, iron alloy, copper, copper alloy, titanium, titanium alloy, aluminum, aluminum alloy, etc., and exhibits conductivity.
- the first carbon nanotube 101 and the second carbon nanotube 102 basically have the same properties. However, the crystallinity of the first carbon nanotube 101 is lower than the crystallinity of the second carbon nanotube 102. Thus, the first carbon nanotube 101 has low crystallinity. It is considered that the lower the degree of crystallinity, the larger the number of defects in the cylindrical graphene sheet constituting the carbon nanotube, and the higher the carrying ability of the potential control particles.
- the high crystalline carbon nanotube positive electrode (conductive target) and the low crystalline carbon nanotube negative electrode on one side, it is possible to achieve both high output and high capacity.
- a lithium ion capacitor when applied to a lithium ion capacitor, by forming a long carbon nanotube cathode (conductive target) and a low crystallinity carbon nanotube anode on each side, it is possible to achieve both high output and high capacity. Furthermore, by simultaneously forming by this manufacturing mode, it becomes possible to improve the productivity.
- the crystallinity of the first carbon nanotube 101 is lower than the crystallinity of the second carbon nanotube 102, but may be reversed.
- the housing 200 and the electrolyte solution 205 are omitted.
- FIG. 16 shows a carbon nanotube device according to a fourth embodiment.
- the carbon nanotube device constitutes a capacitor for storing electric charge, and is constructed by assembling a plurality of carbon nanotube elements 108. As shown in FIG.
- the carbon nanotube element 108 includes (i) an object 1 having flat first and second carbon nanotube surfaces 11 and 12 facing each other; (1) A first carbon nanotube 101 formed to extend substantially perpendicularly to the first carbon nanotube forming surface 11 so as to be erected on the carbon nanotube forming surface 11; (iii) a second carbon nanotube forming surface 12 of the object 1 And a second carbon nanotube 102 formed so as to extend substantially perpendicularly to the second carbon nanotube forming surface 12 so as to stand upright.
- the low crystalline first carbon nanotube 101 and the high crystalline second carbon nanotube 102 are mutually separated via a not shown separator. They are arranged in a symmetrical arrangement. Therefore, as shown in FIG. 16, in the direction in which the elements 108 are arranged (arrow EA direction), the second carbon nanotube 102, the first carbon nanotube 101, the first carbon nanotube 101, the second carbon nanotube 102, the second carbon nanotube It is arrange
- the low crystalline first carbon nanotubes 101, 101 face each other, and the highly crystalline second carbon nanotubes 102, 102 face each other.
- the low crystalline first carbon nanotube 101 generally has a large surface area.
- the highly crystalline second carbon nanotubes 102 have relatively good conductivity because they form a good cylindrical graphene sheet. Therefore, as shown in FIG. 16, the low crystallinity first carbon nanotubes 101 face each other, the high crystallinity second carbon nanotubes 102 face one another, and they are connected in parallel to achieve high output function. And high capacity functions can be hybridized.
- a novel carbon nanotube device is provided that is advantageous for mounting the first carbon nanotube 101 and the second carbon nanotube 102 having different properties in terms of crystallinity and hybridizing the characteristics of the device. can do.
- the crystallinity of the first carbon nanotube 101 is lower than the crystallinity of the second carbon nanotube 102, but may be reversed.
- the housing 200 and the electrolyte solution 205 are omitted.
- FIG. 17 shows a carbon nanotube device according to a fifth embodiment. Since the first carbon nanotubes 101 having a large diameter and a large diameter generally have good supportability, they can easily function as a negative electrode by supporting particles such as lithium titanate particles. On the other hand, the small and thin second carbon nanotubes 102 having relatively small diameter can be used as a positive electrode having a relatively good electrolyte impregnation and an excellent ion conductivity. As shown in FIG. 17, by stacking the thick first carbon nanotubes 101 and the thin second carbon nanotubes 102 so as to face each other and connecting them in series, a capacitor with a high electromotive force can be manufactured with high productivity.
- the thick first carbon nanotube 101 and the thin second carbon nanotube 102 are arranged in an asymmetric arrangement with each other via a separator (not shown). Therefore, as shown in FIG. 17, in the direction in which the elements 108 are arranged (arrow EA direction), the thin second carbon nanotube 102, the thick first carbon nanotube 101, the thin second carbon nanotube 102, the thick first carbon nanotube 101, The thin second carbon nanotubes 102 are arranged in this order. According to the present embodiment, the crystallinity of the first carbon nanotube 101 is lower than the crystallinity of the second carbon nanotube 102, but may be reversed. In FIG. 16, the housing 200 and the electrolyte solution 205 are omitted.
- Example of manufacturing method In forming the carbon nanotube element 108 having carbon nanotubes different in the above-mentioned properties, the following manufacturing method can be exemplified.
- (I) Prepare an object (target object) having a carbon nanotube forming surface for forming a carbon nanotube, and at the same time, a distance between a reaction chamber for containing the object and the carbon nanotube forming surface of the object accommodated in the reaction chamber Of the gas supply chamber and the reaction chamber, and the reaction gas of the gas supply chamber is blown out into the reaction chamber while the gas supply chamber extending along the surface direction of the carbon nanotube formation surface extends.
- a gas passage forming member having a plurality of outlets, a carbon nanotube forming surface of an object, a gas passage forming member, and a heating source for heating at least one of reaction gases to a carbon nanotube forming temperature; carry out.
- the reaction gas is supplied to the gas supply chamber in a state where at least one of the carbon nanotube forming surface of the object, the gas passage forming member, and the reaction gas is heated to the carbon nanotube forming temperature.
- the reaction gas in the gas supply chamber is blown out from the outlet toward the carbon nanotube forming surface of the object along the direction intersecting the surface direction in which the carbon nanotube forming surface of the object in the reaction chamber extends, carbon of the object
- a carbon nanotube formation step of forming carbon nanotubes on the nanotube formation surface is carried out.
- the shortest distance L from each outlet to the common carbon nanotube-forming surface of the object is represented relative to 100 when blowing out the reaction gas, a range of 75 to 125 is provided across each outlet.
- the shortest distance L from each outlet to the carbon nanotube-forming surface of the object is balanced. In this case, the overall variation of the first carbon nanotube is reduced. Similarly, the variation of the second carbon nanotubes is reduced.
- the carbon nanotube formed surface of the object has a first carbon nanotube formed surface and a second carbon nanotube formed surface, and a first operation of forming a carbon nanotube on the first carbon nanotube formed surface, and a second operation.
- the second operation of forming carbon nanotubes on the carbon nanotube formation surface is controlled independently.
- the properties of the carbon nanotubes formed on the first carbon nanotube formation surface in the first operation and the second carbon nanotube on the second carbon nanotube formation surface are formed in the second operation. It is possible to change the properties of the carbon nanotube to be
- the first operation and the second operation are preferably performed simultaneously in terms of production, they may be performed at different times so that they do not overlap in time.
- the first operation and the second operation may be performed while being partially overlapped in time and shifted in time.
- ⁇ 2 70 to 110 °
- the carbon nanotube-forming surface of the object is provided with the first carbon nanotube-forming surface and the second carbon nanotube provided at different positions (for example, the front surface, the back surface, or the side surface when the object is a substrate)
- the facing wall is a first facing wall facing the first carbon nanotube-forming surface of the object at a first distance, and a second spacing between the second carbon nanotube-forming surface of the object
- the blowout port includes a first blowout port formed in the first facing wall and a second blowout port formed in the second facing wall.
- the gas supply chamber is connected to the first gas supply source and the first gas supply chamber connected to the first outlet, and connected to the second gas supply source and connected to the second outlet And a second gas supply chamber to
- the heating source is a first reaction gas for forming carbon nanotubes on the first carbon nanotube formation surface, at least one of the first carbon nanotube formation surface of the object, and the first gas supply chamber at the first carbon nanotube formation temperature.
- the first operation of forming carbon nanotubes on the first carbon nanotube formation surface and the second operation of forming carbon nanotubes on the second carbon nanotube formation surface can be controlled independently.
- the properties of the carbon nanotubes formed on the first carbon nanotube formation surface in the first operation and the second carbon nanotube on the second carbon nanotube formation surface are formed in the second operation. It is also possible to easily change the properties of the carbon nanotube to be made.
- the first operation and the second operation may be performed simultaneously in time as described above, or may be performed in time.
- one end side of the object can be sandwiched by the pair of first installation portions, and the other end side of the object can be sandwiched by the pair of second installation portions. Then, by displacing the first installation portion and the second installation portion in a direction to relatively separate along the surface direction of the object, tension is applied in the surface direction of the object, and excessive bending deformation of the object is suppressed. .
- the flow rate per unit time of the first reaction gas blown out from the first outlet and the flow rate per unit time of the second reaction gas blown out from the second outlet are not equal per unit time. Even in this case, displacement of the carbon nanotube-formed surface of the object in the thickness direction of the object is suppressed.
- the outlet of the gas discharge passage of the gas passage forming member is disposed at a position facing the side end surface of the object.
- the reaction gas in contact with the carbon nanotube formation surface of the object can be promptly discharged from the gas discharge passage after forming the carbon nanotubes. For this reason, it is suppressed that the reacted gas after forming a carbon nanotube remains in a reaction chamber. In this case, it can contribute to the formation of a good carbon nanotube.
- the carbon source and the process conditions are not particularly limited.
- carbon sources for supplying carbon to form carbon nanotubes include aliphatic hydrocarbons such as alkanes, alkenes and alkynes, aliphatic compounds such as alcohols and ethyl, and aromatic compounds such as aromatic hydrocarbons. Therefore, a CVD method (thermal CVD, plasma CVD, remote plasma CVD method, etc.) using an alcohol-based source gas and a hydrocarbon-based source gas as carbon sources is exemplified.
- alcohol-based source gases include gases such as methyl alcohol, ethyl alcohol, propanol, butanol, pentanol and hexanol.
- a hydrocarbon-based source gas methane gas, ethane gas, acetylene gas, propane gas and the like are exemplified.
- An object 1 (object) for forming a carbon nanotube has a first carbon nanotube forming surface 11 and a first carbon nanotube forming surface 12 which face each other.
- the carbon nanotube manufacturing apparatus forms a first carbon nanotube on the first carbon nanotube formation surface 11 and forms a second carbon nanotube on the second carbon nanotube formation surface 12.
- the object 1 is in the form of a flat substrate, and the two-dimensional flat first carbon nanotube-formed surface 11 extending in a direction opposite to each other; And a flat second carbon nanotube-forming surface 12 arranged side by side.
- the material of the object 1 is not particularly limited, and silicon, metal and the like are exemplified.
- the metal examples include iron, titanium, copper, aluminum, iron alloys (including stainless steel), titanium alloys, copper alloys, aluminum alloys and the like.
- the first carbon nanotube-forming surface 11 and the second carbon nanotube-forming surface 12 are flat extending in two-dimensional directions, and are one direction X (longitudinal direction) which is one direction, Extend in the Y direction (width direction), which is another direction intersecting (orthogonal).
- a catalyst be present on the carbon nanotube forming surfaces 11 and 12 of the object 1.
- a transition metal is usually used as a catalyst.
- metals of groups V to VIII are preferred.
- the catalyst is preferably an A-B based alloy.
- A is preferably at least one of iron, cobalt and nickel
- B is preferably at least one of titanium, vanadium, zirconium, niobium, hafnium and tantalum.
- cobalt-titanium based alloys, cobalt-vanadium based alloys, nickel-titanium based alloys, nickel-vanadium based alloys, iron-zirconium based alloys, iron-niobium based alloys may be mentioned.
- titanium is 10% or more, 30% or more, 50% or more, 70% or more (the balance is iron), and 90% or less by mass ratio.
- vanadium is 10% or more, 30% or more, 50% or more, 70% or more (the balance is iron), and 90% or less by mass ratio.
- An apparatus main body 2 (base) shown in FIG. 1 forms a base of a carbon nanotube manufacturing apparatus.
- a gas passage forming member 3 for supplying a reaction gas is provided in the apparatus main body 2.
- the gas passage forming member 3 has a first space E1 (the shortest distance) between the reaction chamber 30 having a volume for housing the object 1 and the first carbon nanotube forming surface 11 of the object 1. It has a first facing wall 31 facing away and a second facing wall 32 facing the second carbon nanotube-formed surface 12 of the object 1 with a second gap E2.
- E1 ⁇ E2 may be set, or E1> E2.
- the first facing wall 31 is substantially parallel to the first carbon nanotube-formed surface 11 of the object 1, and the first carbon nanotube-formed surface 11 of the object 1 extends. It extends two-dimensionally along the one surface direction (the direction of the arrow S1), and extends in the X direction and the Y direction described above. In this case, it is advantageous to suppress variation in the entire first carbon nanotubes 101 formed on the first carbon nanotube forming surface 11 of the object 1.
- the second facing wall 32 is substantially parallel to the second carbon nanotube forming surface 12 of the object 1, and the second facing wall 32 extends along the surface direction (arrow S2 direction) along which the second carbon nanotube forming surface 12 of the object 1 extends. It is dimensionally extended, and is extended in the above-mentioned X direction and Y direction. In this case, it is advantageous to reduce the variation of the entire first carbon nanotubes 101 formed on the second carbon nanotube forming surface 12 of the object 1.
- the gas passage forming member 3 has a plurality of first outlets 41 formed in the first facing wall 31 so as to penetrate the first facing wall 31 in the thickness direction, and the second facing wall 32.
- a second surface direction in which the second carbon nanotube forming surface 12 of the object 1 extends using the first gas supply chamber 51 communicating with the first blowout port 41 and the second facing wall 32.
- the second gas supply chamber 52 extends along the (S2 direction) and communicates with the second outlet 42, and the first gas discharge passage 33 communicates with the reaction chamber 30 via the first outlet 38 (see FIG. 2) and the reaction chamber 30 via the second outlet 39 thereof 2 gas discharge passage 34 has a (see FIG. 2).
- the first outlet 41 faces the first carbon nanotube forming surface 11 of the object 1.
- the second outlet 42 faces the second carbon nanotube forming surface 12 of the object 1.
- the first gas supply chamber 51 is formed to face the first carbon nanotube forming surface 11 of the object 1 and is a box-like passage, and is larger than the width dimension D2 of the object 1 It has a width dimension D20.
- the second gas supply chamber 52 is formed to face the first carbon nanotube-formed surface 11 of the object 1 and is a box-like passage, and has a width dimension D20 larger than the width dimension D2 of the object 1.
- the box-shaped passage is a flat box-shaped passage extending in a two-dimensional direction (X direction, Y direction). The reason is that the first reaction gas is sprayed to the first carbon nanotube formation surface 11 as vertically as possible and uniformly, and the first carbon nanotube 101 is formed as uniformly as possible.
- the second reaction gas is sprayed on the second carbon nanotube formation surface 12 as evenly and vertically as possible to form the second carbon nanotube 102 as uniformly as possible.
- the first gas supply chamber 51 is disposed above the object 1 and the second gas supply chamber 52 is disposed below the object 1.
- the plurality of first outlets 41 are preferably formed on substantially the entire surface (except for the peripheral portion) of the first facing wall 31 at substantially equal intervals in a staggered arrangement.
- the first reaction gas can be sprayed as uniformly as possible, which can contribute to the reduction of the overall variation of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11.
- the arrangement is not limited to the staggered arrangement, as long as it can contribute to the reduction of the variation of the entire first carbon nanotube 101, so long as the plurality of first outlets 41 are formed in a scattered manner in the first facing wall 31 good.
- the plurality of second outlets 42 be formed in the second facing wall 32 at a substantially equal interval in a staggered arrangement. In this case, the variation of the second carbon nanotube 102 formed on the second carbon nanotube forming surface 12 can be reduced. In addition, it is not limited to a zigzag arrangement.
- the first outlet 41 is formed by a circular hole with an inner diameter DW1 (for example, 0.2 to 8 mm, 0.3 to 5 mm) depending on the size of the object 1 and the like. it can.
- the pitch between the central axes P1 of the first outlets 41 adjacent to each other is PA1 and the inner diameter of the first outlets 41 is DW1
- the pitch PA1 can be set to DW1 ⁇ ⁇ 1.
- the range of 2 to 50 and the range of 3 to 25 are exemplified as ⁇ 1.
- a pitch may be made small, and a hole diameter may be enlarged, so that the gas supply is distant.
- FIG. 4 is a cross-sectional view showing the thickness of the object 1, from the central axis P1 of the plurality of first outlets 41 toward the first carbon nanotube forming surface 11 of the object 1.
- ⁇ 1 and ⁇ 2 may be 88 to 92 °, particularly 90 °.
- the first facing wall 31 and the second facing wall 32 are connected to each other by the first sub wall 61 and the second sub wall 62.
- the first outlet 38 of the reaction chamber 30 is formed in the first sub wall 61 so as to face and approach one side end surface 14 of the object 1.
- the second outlet 39 of the reaction chamber 30 is formed in the second sub-wall 62 so as to approach and face the other side end surface 15 of the object 1.
- the thickness TA of the object 1 is relatively thick, the distance between the first outlet 38 and the side end surface 14 is M1, and the distance between the second outlet 39 and the side end surface 15 is M2.
- M1 is (0.3 to 7) ⁇ TA or (0.5 to 5) ⁇ TA, where TA is a thickness of However, it is not limited to this.
- M1 is (0.3 to 7) ⁇ TE or (0.5 to 5) ⁇ TE. However, it is not limited to this.
- the first outlet 38 approaches and approaches the side end surface 14 of the object 1. Therefore, it is advantageous to quickly discharge the reaction gas in which the carbon nanotubes 101 and 102 are formed from the first outlet 38 to the first gas discharge passage 33.
- M2 is (0.3 to 5) ⁇ TA or (0.5 to 2) ⁇ TA.
- the second outlet 39 faces and approaches the side end surface 15 of the object 1. Therefore, it is advantageous to quickly discharge the reaction gas in which the carbon nanotubes 101 and 102 are formed from the second blowout port 39 to the second gas discharge passage 34.
- the first gas discharge passage 33 is formed by using the first sub wall 61 and the first side wall 63 outside the first sub wall 61, and the drain side (not shown) Lead to The second gas discharge passage 34 is formed by using the second sub wall 62 and the second side wall 64 outside the second sub wall 62, and is connected to the drain side.
- At least one of the first reaction gas in the first carbon nanotube surface 11 of the object 1, the gas passage forming member 3 and the first gas supply chamber 51 is used as a carbon nanotube formation temperature (for example, about 400 to 1000 ° C., 550).
- a first heating source 71 for heating to about 700 ° C. is provided in the apparatus main body 2.
- the heating sources 71 and 72 are disposed outside the gas supply chambers 51 and 52, they are also advantageous in heating the entire gas supply chambers 51 and 52 and the entire passage forming member 3 It is.
- the heating temperature affects the crystallinity of carbon nanotubes. When the heating temperature is relatively low, defects in the graphene sheet are increased, and the crystallinity of the carbon nanotube is reduced.
- the first heating source 71 is preferably disposed outside (upper side) of the first gas supply chamber 51 and is formed of a lamp heater that emits near infrared light.
- the second heating source 72 is preferably disposed outside (upper side) of the second gas supply chamber 52 and is formed of a lamp heater that emits near infrared light.
- the heating sources 71 and 72 can heat the passage forming member 3 itself as well as the reaction gas in the passage forming member 3.
- the whole passage forming member 3 is formed of a material (for example, quartz glass) which can transmit near infrared rays.
- the first heating source 71 and the second heating source 72 can heat the object 1 in the reaction chamber 30 to the carbon nanotube formation temperature.
- the heating sources 71 and 72 are covered with a cover member 75 from the outside.
- the first heating source 71 and the second heating source 72 can be controlled independently of each other by a controller. In this case, it is advantageous to independently control the temperature T1 of the first carbon nanotube formed surface 11 of the object 1 and the temperature T2 of the second carbon nanotube formed surface 12 of the object 1 independently.
- the first heating source 71 and the second heating source 72 may be an induction heating system for heating the object 1 by electromagnetic induction.
- the surfaces of the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 can be intensively heated early due to the skin effect. Furthermore, other heating methods may be used.
- the first gas supply chamber 51 is connected via a first supply passage 81 capable of supplying a first reaction gas and a first carrier gas.
- the first supply passage 81 is provided with a first supply valve 81 a for a first reaction gas and a first supply valve 81 c for a first carrier gas.
- the second gas supply chamber 52 is connected via a second supply passage 82 capable of supplying a second reaction gas and a second carrier gas.
- the second supply passage 82 is provided with a second supply valve 82a for a second reaction gas and a second supply valve 82c for a second carrier gas.
- the first supply passage 81 and the second supply passage 82 are provided with flow meters for measuring the flow rates of the respective gases supplied.
- the carbon nanotube formation process will be described. First, it is preferable to support the catalyst on the first carbon nanotube surface 11 and the second carbon nanotube surface 12 of the object 1 respectively.
- the catalyst can be formed on the first carbon nanotube surface 11 and the second carbon nanotube surface 12 of the object 1 by vapor deposition, sputtering, dipping or the like. Thereafter, a carbon nanotube formation process is performed. That is, as shown in FIGS. 1 and 2, the object 1 is installed in the reaction chamber 30 via the installation unit 18.
- the setting unit 18 may be a fixed type or a conveyance roller. If fixed, carbon nanotubes are formed with the object 1 fixed. With the transport roller, the carbon nanotubes 11 and 12 can be continuously formed while continuously transporting the object 1 in the transport direction, and productivity can be improved.
- the reaction chamber 30 is evacuated.
- the first heating source 71 and the second heating source 72 are turned on to set the first carbon nanotube forming surface 11 and the second carbon nanotube forming surface 12 of the object 1 to a predetermined temperature (for example, 300 to 600 ° C. or 500 to 600 ° C. Let the temperature rise.
- the carrier gas argon gas or nitrogen gas
- a gas is supplied to the reaction chamber 30 through the second gas supply chamber 52 and the second air outlet 42, and the pressure in the reaction chamber 30 is adjusted.
- the first reaction gas is supplied from the first supply passage 81 to the first gas supply chamber 51, and the second reaction gas is supplied from the second supply passage 82 to the second gas supply chamber 52.
- the first reaction gas supplied to the first gas supply chamber 51 is blown out from the plurality of first outlets 41 toward the first carbon nanotube forming surface 11 of the object 1 so as to collide with it.
- the second reaction gas supplied to the second gas supply chamber 52 is blown out from the plurality of second outlets 42 toward the second carbon nanotube forming surface 12 of the object 1 so as to collide with it.
- the first reaction gas and the second reaction gas can be of the same amount and the same kind.
- the first carbon nanotube 101 is formed on the first carbon nanotube formation surface 11 of the object 1 and the second carbon nanotube formation of the object 1
- the second carbon nanotube 102 is formed on the surface 12.
- the first carbon nanotubes 101 basically grow in a direction substantially perpendicular to the first carbon nanotube formation surface 11.
- the second carbon nanotubes 102 basically grow in a direction substantially perpendicular to the second carbon nanotube forming surface 12.
- each of the first outlets 41 it is preferable to set each of the first outlets 41 within a range of 90 to 110 (particularly, within a range of 95 to 105, 100). Therefore, for each first outlet 41, the shortest distance L1 from the first outlet 41 to the first carbon nanotube forming surface 11 of the object 1 is balanced as much as possible. In this case, the first carbon nanotubes 101 are favorably formed on the first carbon nanotube formation surface 11.
- each second outlet 42 is set in the range of 75 to 125. Specifically, it is preferable that the range of 90 to 110 (in particular, the range of 95 to 105) is set across the second outlets 42. Therefore, the shortest distance L2 from each second outlet 42 to the second carbon nanotube forming surface 12 of the object 1 is balanced as much as possible. In this case, the second carbon nanotubes 102 are favorably formed on the second carbon nanotube formation surface 12.
- the flow rates per unit time of the first reaction gas and the second reaction gas are basically different. Therefore, properties (for example, length, diameter, number, number of layers, crystallinity, amount of defects, type of functional group, amount of functional group, density, distribution, etc.) of the first carbon nanotube 101 and the second carbon nanotube 102 Can increase the difference of at least one of In this case, the outputs of the heating sources 71 and 72 can also be different. Furthermore, in order to change the properties of the first carbon nanotube 101 and the second carbon nanotube 102, the catalyst supported on the first carbon nanotube forming surface 11 and the second carbon nanotube forming surface 12 of the object 1 is also supported. The amount, loading density and composition can basically be varied.
- the loading density means the weight of catalyst per unit area of the carbon nanotube formation surface.
- the first reaction gas is supplied from the first gas supply chamber 51 in the opposite directions (arrows W10 and W11). It is decided to supply to the room 51. This can contribute to the reduction of the variation of the first carbon nanotubes 101 formed on the first carbon nanotube forming surface 11 of the object 1.
- the second reaction gas is supplied to the second gas supply chamber 52 also in the opposite directions (the directions of arrows W20 and W21) of the second gas supply chamber 52. This can contribute to reducing the variation of the carbon nanotubes formed on the second carbon nanotube forming surface 12 of the object 1.
- the object 1 is taken out from the reaction chamber 30.
- the second operation of forming the second carbon nanotube 102 on the second carbon nanotube forming surface 12 of the object 1 can be controlled independently.
- the valves 81a and 82a shown in FIG. 1 can be controlled independently of each other.
- the valves 81c and 82c can be controlled independently of each other.
- the heating temperatures of the heating sources 71 and 72 can be controlled independently of each other.
- the properties of the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 in the first operation and the second carbon nanotube formation surface 12 can be obtained.
- the properties of the second carbon nanotube 102 formed in the second operation can be changed.
- the outputs of the heating sources 71 and 72 can also be controlled independently.
- the first outlet 38 of the reaction chamber 30 of the gas passage forming member 3 is disposed at a position facing the side end surface 14 of the object 1.
- the first outlet 39 is disposed at a position facing the side end surface 15 of the object 1.
- the first carbon nanotube 101 is formed on the first carbon nanotube formation surface 11, and in the direction of arrows N1 and N2 promptly.
- the gas can be discharged from the first outlet 38 and the second outlet 39 into the gas discharge passages 33, 34. For this reason, it is suppressed that the reacted gas after forming the first carbon nanotube 101 remains in the reaction chamber 30. In this case, it can contribute to the formation of a good first carbon nanotube 101.
- the present production mode basically exhibits the same configuration and the same effects as the above-described production mode 1.
- the following description will focus on the differences.
- the second operation to form the two-carbon nanotube 102 is controlled independently.
- the first operation and the second operation are independently controlled. Thereby, the property of the first carbon nanotube 101 formed in the first operation on the first carbon nanotube forming surface 11 and the property of the second carbon nanotube 102 formed in the second operation on the second carbon nanotube forming surface 12 To change
- the length of the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 can be made relatively long, and the length of the second carbon nanotube 102 formed on the second carbon nanotube formation surface 12 is relatively Can be as short as possible.
- the length of the first carbon nanotube 101 may be shorter than the length of the second carbon nanotube 102, and the length of the second carbon nanotube 102 may be relatively longer than the first carbon nanotube 101.
- the density of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 can be made relatively higher than the density of the second carbon nanotubes 102, and the second carbon formed on the second carbon nanotube formation surface 12
- the density of the nanotubes 102 can also be relatively lower than the density of the first carbon nanotubes 101. The reverse is also possible.
- the material of the object 1 may be silicon or metal.
- the metal include iron, titanium, copper, aluminum, iron alloys (including stainless steel), titanium alloys, copper alloys, aluminum alloys and the like.
- the first operation and the second operation can be implemented to change the operation contents of each other.
- Example 1 Independent Control of Flow Rate Example 1 was carried out using the carbon nanotube production apparatus shown in FIGS. 1 to 4.
- the lengths of the first carbon nanotube 101 formed on the first carbon nanotube forming surface 11 of the object 1 and the second carbon nanotube 102 formed on the second carbon nanotube forming surface 12 Made different.
- Pretreatment As the first step, the surface of the object 1 was treated to be water repellent.
- the processing solution was prepared by blending hexaorganosilazane at a concentration of 5% by volume with toluene.
- Object 1 was immersed in this treatment liquid for 30 minutes. Thereafter, the object 1 was pulled up from the treatment liquid and allowed to dry naturally.
- a coating solution was applied to the first carbon nanotube surface 11 and the second carbon nanotube surface 12 of the object 1 by dip coating to form a thin film of iron-titanium alloy to a thickness of 30 nm.
- the catalyst is considered to be island-like.
- the coating liquid is made by dispersing particles of iron-titanium alloy (Fe: 80%, Ti: 20% by mass ratio) in hexane, and measuring conditions of wavelength 680 nm with a visible light meter (W7PA CO7 500) The solution was adjusted in concentration so that the absorbance was 0.3.
- W7PA CO7 500 visible light meter
- Carbon nanotubes were formed by a carbon nanotube manufacturing apparatus formed by a thermal CVD apparatus having the structure shown in FIGS. 1 to 4. In advance, evacuate the reaction chamber 30 to 10 Pa. Nitrogen gas of 5000 cc / min as a carrier gas is introduced from both sides of the object 1 as a carrier gas, and the pressure of the reaction chamber 30 is adjusted to 1 ⁇ 10 5 Pa. did. After raising the surface temperature of the object 1 to 600 ° C., a reaction gas (acetylene gas) serving as a carbon source was introduced from both sides of the object 1 for 6 minutes.
- acetylene gas acetylene gas
- FIG. 6 shows the formed carbon nanotubes.
- the length of the first carbon nanotube 101 was about 54 ⁇ m
- the length of the second carbon nanotube 102 was about 184 ⁇ m. As described above, as the flow rate of the reaction gas per unit time increases, the length of the carbon nanotube becomes longer.
- Carbon nanotubes were formed by a carbon nanotube manufacturing apparatus formed by a thermal CVD apparatus having the structure shown in FIGS. 1 to 4. In advance, evacuate the reaction chamber 30 to 10 Pa. Nitrogen gas of 5000 cc / min as a carrier gas is introduced from both sides of the object 1 as a carrier gas, and the pressure of the reaction chamber 30 is adjusted to 1 ⁇ 10 5 Pa. did. After raising the surface temperature of the object 1 to 600 ° C., a reaction gas (acetylene gas) serving as a carbon source was introduced from both sides of the object 1 for 6 minutes. In this case, both sides were set to 1000 cc / min and introduced for 6 minutes.
- acetylene gas acetylene gas
- FIG. 5 shows the formed carbon nanotubes. Since the flow rate per unit time of the reaction gas was almost the same, the length of the first carbon nanotube 101 was about 94 ⁇ m, and the second carbon nanotube 102 was about 94 ⁇ m.
- Example 2 (Object 1)
- Example 3 the lengths of the first carbon nanotube 101 formed on the first carbon nanotube forming surface 11 of the object 1 and the second carbon nanotube 102 formed on the second carbon nanotube forming surface 12 (See Figure 7).
- Object 1 was a 0.5 mm thick silicon substrate.
- the surface roughness of the first carbon nanotube-forming surface 11, which is the upper surface, was Ra 5 nm.
- the surface roughness of the second carbon nanotube formed surface 12 which is the lower surface was set to Ra 100 nm, and the surface was rougher than the first carbon nanotube formed surface 11.
- Example 1 The procedure was the same as in Example 1.
- Formation of CNT The same as in Comparative Example 1.
- Carbon nanotubes were formed on both the first carbon nanotube surface 11 and the second carbon nanotube surface 12 of the object 1.
- FIG. 7 shows the carbon nanotubes formed for Example 2.
- the length of the carbon nanotube was about 72 ⁇ m for the first carbon nanotube 101 formed on the first carbon nanotube forming surface 11 which is the upper surface.
- the second carbon nanotubes 102 formed on the lower surface of the second carbon nanotube-forming surface 12 were about 144 ⁇ m, and about twice the length of the first carbon nanotubes 101.
- Example 1B carbon nanotubes having different crystallinity are formed on the first carbon nanotube-forming surface and the second carbon nanotube-forming surface of the object.
- object 1 As the object 1, a silicon substrate of 0.5 mm in thickness is used. Both surfaces of the substrate are polished, and the surface roughness is Ra 5 nm.
- Pretreatment As the first step, the surface of the object 1 is treated to be water repellent.
- the treatment liquid is a mixture of hexaorganosilazane at a concentration of 5 vol% in toluene, and the object 1 is immersed in this for 30 minutes. Then pull it up and let it dry naturally.
- an Fe—Ti alloy thin film is formed to a thickness of 30 nm on both surfaces of the first carbon nanotube-formed surface and the second carbon nanotube-formed surface of the object 1 by dip coating.
- the coating solution was prepared by dispersing Fe-Ti alloy particles (Fe 80%-Ti 20%) in hexane, and using a visible light meter (CO 7500 manufactured by WPA), the absorbance was 0.3 at a measurement condition of a wavelength of 680 nm. Adjust the concentration to be The dip coating is pulled up at a speed of 3 mm / min in the air at normal temperature. After pulling up, hexane evaporates quickly by natural drying.
- Carbon nanotubes are formed by a thermal CVD apparatus having a structure as shown in FIGS. 1 to 4 described above.
- a carrier gas 5000 cc / min of nitrogen gas is introduced from both sides into a reaction vessel previously evacuated to 10 Pa, and the pressure in the reaction vessel is adjusted to 1 ⁇ 10 5 Pa.
- the heater temperature on one side of the object 1 is set to a low temperature (600 ° C.).
- the heater temperature on the other side is set to a high temperature (750 ° C.).
- acetylene gas of 1000 cc / min is introduced from both sides of the object 1 for 6 minutes as a source gas to be a carbon source to form carbon nanotubes.
- Amorphous carbon adheres to the carbon nanotube on the surface on the low temperature side of the temperature of the object 1 and the crystallinity is low.
- the carbon nanotube on the surface on the high temperature side of the temperature of the object 1 has high crystallinity.
- the low crystallinity carbon nanotube generally has good support for the substance, since the graphene sheet has many defects (sites where carbon atoms which should be originally present are not present). Therefore, it is easy to function as a negative electrode by supporting lithium titanate particles.
- capacitors of high electromotive force can be manufactured with high productivity by stacking high crystallinity carbon nanotubes and low crystallinity carbon nanotubes so as to face each other and connecting them in series. Not only the temperature at the time of forming a carbon nanotube, but also the gas flow rate etc. which form a carbon nanotube are considered to be controllable.
- Example 2B In this embodiment, the surface temperature of the object is changed to form carbon nanotubes having different crystallinity in the first carbon nanotube surface 11 and the second carbon nanotube surface 12 of the object.
- (Object) Pretreatment) (CNT formation) is the same as in Example 1B.
- Low crystalline carbon nanotubes generally have high surface area.
- highly crystalline carbon nanotubes are relatively conductive. For this reason, by stacking the low crystalline carbon nanotubes and the low crystalline carbon nanotubes so as to face each other and connecting them in parallel, the high output function and the high capacity function can be made hybrid.
- Example 3B carbon nanotubes having different thicknesses are formed on the first carbon nanotube surface 11 and the second carbon nanotube surface 12 of the object 1.
- object 1 As the object 1, a silicon substrate of 0.5 mm in thickness is used. Both surfaces of the substrate are also polished, and the surface roughness is Ra 5 nm.
- Pretreatment> In the first step, the substrate surface is subjected to water repellent treatment.
- the processing solution is a mixture of hexaorganosilazane at a concentration of 5 vol% in toluene, and after immersing the substrate in this for 30 minutes, it is pulled up and naturally dried.
- a second step about 10 nm of Fe thin films are formed on both sides of the silicon substrate by spin coating.
- the coating liquid is prepared by dispersing Fe particles (Fe 100%) in hexane and adjusting the concentration to 0.3 with a visible light meter (CO7500 manufactured by WPA) under measurement conditions of a wavelength of 680 nanometers.
- the spin coat is rotated at about 5000 rpm for about 30 seconds in the atmosphere. After rotation, hexane evaporates quickly by natural drying.
- an Fe thin film is formed to a thickness of 10 nm on both sides of the silicon substrate by spin coating on the second carbon nanotube formed surface 12 of the substrate (the surface opposite to the first carbon nanotube formed surface 11 of the substrate).
- the coating solution forms a Fe-Ti alloy thin film about 30 nanometers in hexane.
- the coating solution was prepared by dispersing Fe-Ti alloy particles (Fe 80%-Ti 20%) in hexane, and making the absorbance 0.3 at a measurement condition of wavelength 680 nm with a visible light meter (WPA CO7 500) Adjust the concentration.
- the spin coat is rotated at about 5000 rpm for about 30 seconds in the atmosphere. After rotation, hexane evaporates quickly by natural drying.
- Carbon nanotubes are formed by a thermal CVD apparatus having the structure shown in FIGS. 1 to 4 described above.
- a carrier gas 5000 cc / min of nitrogen gas is introduced on both sides of the substrate into a reaction vessel previously evacuated to 10 Pa, and the pressure in the reaction vessel is adjusted to 1 ⁇ 10 5 Pa.
- 1000 cc / min of acetylene gas is introduced from both sides as a source gas serving as a carbon source for 6 minutes to form carbon nanotubes.
- the diameter of carbon nanotubes formed on the surface on which the Fe catalyst is formed is as thick as 15 nanometers.
- the diameter of carbon nanotubes formed on the surface on which the FeTi catalyst is formed is as thin as 8 nanometers.
- carbon nanotubes having a large diameter and a large diameter generally have good supportability, they can easily function as a negative electrode by supporting lithium titanate particles.
- carbon nanotubes having a small diameter and having a small diameter can be used as a positive electrode which is relatively good in electrolyte impregnation and excellent in ion conduction.
- Example 4B In this embodiment, carbon nanotubes having different numbers per unit area are formed on the first carbon nanotube formed surface 11 and the second carbon nanotube formed surface 12 of the object 1.
- substrate A silicon substrate with a thickness of 0.5 mm is used as the object 1. Both surfaces of the substrate are also polished, and the surface roughness is Ra 5 nm.
- Pretreatment As the first step, the surface of the substrate is treated to be water repellent.
- the processing solution is a mixture of hexaorganosilazane at a concentration of 5 vol% in toluene, and after immersing the substrate in this for 30 minutes, it is pulled up and naturally dried.
- a 30 nm Fe—Ti alloy thin film is formed on both sides of the silicon substrate by dip coating.
- the coating solution was prepared by dispersing Fe-Ti alloy particles (Fe 80%-Ti 20%) in hexane, and making the absorbance 0.3 under the measurement condition of wavelength 680 nm with a visible light meter (CO7500 manufactured by WPA). Adjust the concentration.
- the dip coating is 3 mm / min. Pull up at speed. After pulling up, hexane evaporates quickly by natural drying.
- the surface with a small numerical aperture of the blowout ports 41 and 42 has a low frequency of arrival of the source gas to the catalyst, and the number of carbon nanotubes per unit area decreases. Since the side on which a large number of carbon nanotubes per unit area are formed generally has good supportability (there are many scaffolds for support), it functions as a negative electrode by supporting particles such as lithium titanate particles. It is easy to do.
- a high electromotive force capacitor can be manufactured with high productivity by stacking and connecting in series a carbon nanotube surface having a large number per unit area and a carbon nanotube surface having a small number facing each other. Not only the temperature but also the surface roughness of the substrate, the catalyst diameter, the catalyst activity, the gas flow rate, etc. are considered to be controllable.
- the above-described embodiment is an example in which the first carbon nanotube and the second carbon nanotube differ by one factor (one of length, crystallinity, and number).
- the carbon nanotube may have different factors such as length, diameter, number, number of layers, crystallinity, amount of defects, type of functional group, amount of functional group, density, weight, distribution, etc. is there.
- FIG. 8 shows Production Mode 3.
- the present manufacturing mode basically exhibits the same configuration and the same function and effect as the above-described manufacturing modes 1 and 2. The following description will focus on the differences.
- a supply passage 810 is provided on one end 51e side of the first gas supply chamber 51, and a supply valve 810a for the first reaction gas and a supply valve 810c for the carrier gas are provided.
- a supply passage 811 is provided on the other end 51f of the first gas supply chamber 51, and a supply valve 811a for the first reaction gas and a supply valve 811c for the carrier gas are provided.
- the gas flow rate per unit time can be controlled on one end 51e side and the other end 51f side of the first gas supply chamber 51.
- the properties of the first carbon nanotube 11 (the length, the diameter, the number, the number of layers, the crystallinity, the amount of defects, and the like) of the first carbon nanotube-formed surface 11 at the one end 51e and the other end 51f. It can be expected to change at least one of functional group type, functional group amount, density, weight, distribution and the like.
- a supply passage 820 is provided on one end 52e side of the second gas supply chamber 52, and a supply valve 820a for the second reaction gas and a supply valve 820c for the carrier gas are provided.
- a supply passage 822 is provided on the other end 52f side of the second gas supply chamber 52, and a supply valve 822a for the second reaction gas and a supply valve 822c for the carrier gas are provided.
- FIG. 9 shows Production Mode 4.
- the present production mode basically exhibits the same configuration and the same effects as the above-described production modes 1 to 3.
- the following description will focus on the differences.
- the first gas supply chamber 51 and the second gas supply chamber 52 extend in the lateral direction (horizontal direction).
- the first reaction gas is supplied to the first gas supply chamber 51 in the direction of the arrow W1 (one direction, right in FIG. 9).
- the first reaction gas is blown out from the plurality of first outlets 41 so as to collide with the first carbon nanotube forming surface 11 of the object 1 substantially perpendicularly downward.
- the second reaction gas is supplied to the second gas supply chamber 52 in the direction of arrow W2 (one direction, right in FIG. 9).
- the second reaction gas is blown out from the plurality of second outlets 42 so as to vertically collide with the second carbon nanotube-forming surface 12 of the object 1 along the upper direction.
- the first reaction gas in the first gas supply chamber 51 has an arrow W1 in FIG.
- the flow rate of the first reaction gas gradually decreases from the upstream region 51 u to the downstream region 51 d of the first gas supply chamber 51. Therefore, if the number of the first outlets 41 is the same, the inner diameters of the plurality of first outlets 41 relatively increase in the downstream region 51 d of the first gas supply chamber 51 than in the upstream region 51 u.
- each first outlet 41 if the inner diameter of each first outlet 41 is the same, the number of the plurality of first outlets 41 per unit area increases in the downstream region 51 d of the first gas supply chamber 51 more than the upstream region 51 u. There is. The reason is that, when the first reaction gas of the first gas supply chamber 51 is blown into the reaction chamber 30, the variation in the flow rate of the blow is reduced. According to such a present production mode, it is advantageous to reduce the overall variation of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11.
- the second air outlet 42 The same applies to the second air outlet 42. That is, as the second reaction gas proceeds in the direction of arrow W2 in FIG. 9 in the second gas supply chamber 52, the flow rate of the second reaction gas gradually increases from the upstream region 52u to the downstream region 52d of the second gas supply chamber 52. Decrease. Therefore, if the number of second outlets 42 is the same, the inner diameters of the plurality of second outlets 42 relatively increase in the downstream region 52 d of the second gas supply chamber 52 than in the upstream region 52 u. Alternatively, if the inner diameter of each second outlet 42 is the same, the number of the plurality of second outlets 42 per unit area is relatively smaller in the downstream region 52 d of the second gas supply chamber 52 than in the upstream region 52 u. It has increased.
- FIG. 10 shows a fifth embodiment.
- the present manufacturing mode basically exhibits the same configuration and the same function and effect as the above-described manufacturing modes 1 to 4. The following description will focus on the differences.
- the first gas supply chamber 51 and the second gas supply chamber 52 extend along the longitudinal direction (the height direction, the direction of the arrow H) while forming box-like passages facing each other.
- the object 1 is disposed along the longitudinal direction and has an upper portion 1 u and a lower portion 1 d.
- the carbon nanotube formation surfaces 11 and 12 are extended along the height direction (arrow H direction).
- the first reaction gas supplied to the first gas supply chamber 51 has an angle of approximately 85 to 95 ° to the first carbon nanotube forming surface 11 of the object 1 along the lateral direction from the plurality of first outlets 41, preferably It is blown out so as to collide at 90 °.
- the second reaction gas supplied to the second gas supply chamber 52 has an angle of approximately 85 to 95 ° to the second carbon nanotube-forming surface 12 of the object 1 along the lateral direction from the plurality of second outlets 42, preferably It is blown out so as to collide at 90 °.
- the present manufacturing mode even when the distance between the upper installation portion 18c and the lower installation portion 18a is long, or when the thickness TA of the object 1 is thin, or Even when the rigidity is low, it is suppressed that the portion 1m between the installation portions 18a and 18c of the object 1 hangs down due to gravity. Further, one end side of the object 1 is sandwiched by the installation portions 18c and 18c, and the other end side of the object 1 is sandwiched by the installation portions 18a and 18a. Then, the installation portions 18c, 18c and the installation portions 18a, 18a are displaced in the direction of relatively separating along the surface directions S1, S2 of the object 1.
- FIG. 11 shows Production Mode 6.
- the present production mode basically exhibits the same configuration and the same effects as the above-described production modes 1 to 5.
- the first facing wall 31 and the first gas supply chamber 51 extend in a two-dimensional lateral direction along the surface direction of the first carbon nanotube-formed surface 11 of the plate-like object 1. It is set up.
- the first gas supply chamber 51 which is formed by using the first facing wall 31 extending in the lateral direction, has a two-dimensional lateral direction along the surface direction of the first carbon nanotube forming surface 11 of the plate-like object 1 It extends along the Such a first gas supply chamber 51 is a flat box-shaped passage facing the first carbon nanotube formation surface 11.
- the first outlets 41 are formed at substantially equal intervals in the form of a dispersed point over substantially the entire area of the first facing wall 31.
- the first reaction gas supplied to the first gas supply chamber 51 is blown out from the plurality of first outlets 41 so as to collide almost perpendicularly with the first carbon nanotube-forming surface 11 of the object 1 along the lower direction.
- the second gas supply chamber 52 is not formed, carbon nanotubes are formed mainly on the first carbon nanotube formation surface 11 of the object 1.
- the reaction gas in the first gas supply chamber 51 is blown out toward the first carbon nanotube-forming surface 11 of the object 1 from the first blowout port 41 along the direction substantially perpendicular to the surface 11).
- carbon nanotubes are formed on the first carbon nanotube-formed surface 11 of the object 1.
- each first blow Over the outlet 41 when the shortest distance L1 from each first outlet 41 to the same first carbon nanotube forming surface 11 of the object 1 is indicated as 100 when blowing out the reaction gas, each first blow Over the outlet 41, it is set in the range of 90 to 110 (particularly in the range of 95 to 105, specifically 100). Therefore, for each first outlet 41, the shortest distance L from each first outlet 41 to the first carbon nanotube-formed surface 11 of the object 1 is balanced. Therefore, the variation of the entire first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 can be reduced. Note that, as can be understood from FIG. 11, since the reaction gas is not directly sprayed on the surface 12 x of the object 1 opposite to the first carbon nanotube formation surface 11, the supply of the reaction gas is restricted. Although carbon nanotubes are formed on the surface 12x, they have different properties.
- FIG. 12 shows Production Mode 7.
- the present production mode basically exhibits the same configuration and the same function and effect as the above-described production modes 1 to 6.
- the shortest distance L1 from each first outlet 41 to the same first carbon nanotube-formed surface 11 of the object 1 is used.
- the range is 90 to 110 (particularly, in the range of 95 to 105, 100) over the respective first outlets 41. Therefore, the shortest distance L1 from each first outlet 41 to the first carbon nanotube forming surface 11 of the object 1 is balanced. In this case, variation in the entire first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 is suppressed.
- the shortest distance L2 from each second outlet 42 to the same second carbon nanotube-formed surface 12 of the object 1 is set.
- the distance is set in the range of 75 to 125 across each second air outlet 42. Specifically, it is set in the range of 90 to 110 (in particular, in the range of 95 to 105) over the respective second outlets 42. Therefore, the shortest distance L2 from each second outlet 42 to the second carbon nanotube forming surface 12 of the object 1 is balanced. In this case, variation in the entire second carbon nanotubes 102 formed on the second carbon nanotube formation surface 12 is suppressed.
- the shortest distance L1 ⁇ the shortest distance L2. Therefore, the interval E1 ⁇ the interval E2. This can contribute to changing the properties of the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 and the second carbon nanotube 102 formed on the second carbon nanotube formation surface 12.
- the shortest distance L1> the shortest distance L2 may be used.
- the present invention is not limited to only the manufacturing mode described above and shown in the drawings, and can be appropriately modified and implemented without departing from the scope of the invention.
- the following technical ideas can be understood from the description of the present specification.
- the multilayer carbon nanotube can be 10 layers or more, 20 layers or more, 30 layers or more, 40 layers or more, 50 layers or more. Therefore, the number of layers of the first carbon nanotube 101 and the second carbon nanotube 102 can be changed by changing the size of the catalyst particles to be supported on the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12.
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Abstract
Description
特許文献2には、反応室に基板を設定する設置部と、設置部に設置された基板に上方に間隔を隔てて対面するパイプ状の1本のガス供給管とが設けられたカーボンナノチューブ製造装置が開示されている。このものによれば、ガス供給管は曲成されている。ガス供給管の周壁には、複数の吹出口が形成されている。このものによれば、反応ガスをガス供給管の複数の吹出口から基板に向けて吹き出す際に、各吹出口から基板のカーボンナノチューブ形成面までの距離を100ミリメートル以下に設定している。
特許文献3には、反応室に設置された平板状の基板の上面および下面とほぼ平行な方向に沿って反応ガスを供給し、基板の上面および下面にカーボンナノチューブを形成するカーボンナノチューブ製造装置が開示されている。
本発明は上記した実情に鑑みてなされたものであり、互いに性状が異なる第1カーボンナノチューブおよび第2カーボンナノチューブを搭載し、特性をハイブリッド化させるのに有利な新規なカーボンナノチューブデバイスを提供することを課題とする。更に、対象物のうち同一のカーボンナノチューブ形成面であれば、その同一のカーボンナノチューブ形成面に形成されるカーボンナノチューブのばらつきを抑制できる新規なカーボンナノチューブ製造方法およびカーボンナノチューブ製造装置を提供することを課題とする。
(実施形態1) 概略説明
実施形態1に係るカーボンナノチューブデバイスは、カーボンナノチューブ素子を有する。カーボンナノチューブ素子は、互いに背向する第1カーボンナノチューブ形成面および第2カーボンナノチューブ形成面をもつ物体と、物体の第1カーボンナノチューブ形成面に形成された第1カーボンナノチューブと、物体の第2カーボンナノチューブ形成面に形成された第2カーボンナノチューブとを備える。第1カーボンナノチューブおよび第2カーボンナノチューブは、物理的性質(形状、寸法も含む)および/または化学的性質等において互いに性状が相違する。ここで、性状とは、カーボンナノチューブの長さ、径(太さ)、単位面積あたり本数、総本数、カーボンナノチューブの層数(カーボンナノチューブは1層の筒構造、2層等の複層筒構造などがある)、結晶性(G/D比:ラマン分光分析のGバンドとDバンドの比)、欠陥量、官能基種、官能基量、密度(カーボンナノチューブ群としての密度)、重量、これらの分布等のうちの少なくとも1つとすることができる。
このように第1カーボンナノチューブおよび第2カーボンナノチューブとで性状を変更させるためには、基板等の物体の表面粗さ、物体の第1カーボンナノチューブ形成面および第2カーボンナノチューブ形成面に担持される触媒担持量、触媒組成、触媒密度、触媒の径、反応ガスの単位時間あたりの流量、第1カーボンナノチューブ形成面と第2カーボンナノチューブ形成面とにおける反応ガスの流量比、流速、反応ガス種、反応ガスの温度、反応ガスの流れ方向、反応ガス導入口のサイズ・ピッチ、第1カーボンナノチューブ形成面と第2カーボンナノチューブ形成面とにおける温度、加熱源の出力等の要因のうちの少なくとも1つを変更させることが好ましい。物体の温度および/または反応ガスの温度を相対的に低下させれば、グラフェンシート(複数の炭素原子が結合して形成する網)における欠損部を相対的に増加させ、カーボンナノチューブの結晶性を相対的に低下させることができる。製造時に基板に保持される触媒の粒径を調整すれば、カーボンナノチューブの直径を調整させたり、カーボンナノチューブの層数を調整させたりできる。カーボンナノチューブの密度は、カーボンナノチューブの層数、および/または、単位面積あたりのカーボンナノチューブの本数に影響され易い。層数および/または本数が増加すると、密度が増加する。カーボンナノチューブの重量は、カーボンナノチューブの密度および/またはカーボンナノチューブの長さに影響され易い。密度が高く、長さが長いと、カーボンナノチューブの重量は増加する。
図13および図14は、実施形態2に係るカーボンナノチューブデバイスを示す。カーボンナノチューブデバイスは、電荷を蓄電するキャパシタを構成しており、長さの異なるCNTの並列接続させるように複数個のカーボンナノチューブ素子108を組み付けて構成されている。図14に示すように、単数のカーボンナノチューブ素子108は、(i)互いに背向する平坦な第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12をもつ物体1(対象物)と、(ii)物体1の第1カーボンナノチューブ形成面11に立設されるように第1カーボンナノチューブ形成面11にほぼ垂直に延びるように並走されて形成された多数の第1カーボンナノチューブ101と、(iii)物体1の第2カーボンナノチューブ形成面12に立設されるように第2カーボンナノチューブ形成面12にほぼ垂直に延びるように並走されて形成された多数の第2カーボンナノチューブ102とを備える。このようなカーボンナノチューブ素子108は、電解液205と共に筐体200に密閉されている。電解液205としては、キャパシタで用いられる公知の電解液を採用できる。
図15A,図15Bは、実施形態3に係るカーボンナノチューブデバイスを示す。カーボンナノチューブデバイスは、電荷を蓄電するキャパシタを構成しており、複数個のカーボンナノチューブ素子108を組み付けて構成されている。図15Aに示すように、カーボンナノチューブ素子108は、(i)互いに背向する平坦な第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12をもつ物体1と、(ii)物体1の第1カーボンナノチューブ形成面11に立設されるように第1カーボンナノチューブ形成面11にほぼ垂直に延びるように形成された第1カーボンナノチューブ101と、(iii)物体1の第2カーボンナノチューブ形成面12に立設されるように第2カーボンナノチューブ形成面12にほぼ垂直に延びるように形成された形成された第2カーボンナノチューブ102とを備える。図15Aに示すように、隣接するカーボンナノチューブ素子108については、第1カーボンナノチューブ101および第2カーボンナノチューブ102は、図略のセパレータを介して、互いに非対称的配置として配置されている。
図16は、実施形態4に係るカーボンナノチューブデバイスを示す。カーボンナノチューブデバイスは、電荷を蓄電するキャパシタを構成しており、複数個のカーボンナノチューブ素子108を組み付けて構成されている。図16に示すように、カーボンナノチューブ素子108は、(i)互いに背向する平坦な第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12をもつ物体1と、(ii)物体1の第1カーボンナノチューブ形成面11に立設されるように第1カーボンナノチューブ形成面11にほぼ垂直に延びるように形成された第1カーボンナノチューブ101と、(iii)物体1の第2カーボンナノチューブ形成面12に立設されるように第2カーボンナノチューブ形成面12にほぼ垂直に延びるように形成された第2カーボンナノチューブ102とを備える。
図17は、実施形態5に係るカーボンナノチューブデバイスを示す。直径が大きくて太い第1カーボンナノチューブ101は、一般的に担持性が良いので、チタン酸リチウム粒子等の粒子を担持することで負極として機能し易い。これに対して、直径が小さくて細い第2カーボンナノチューブ102は、相対的に電解液の含浸性が良くイオン伝導の優れた正極として使用可能である。図17に示すように、太い第1カーボンナノチューブ101と細い第2カーボンナノチューブ102とが向き合うように積層し、直列接続することで高い起電力のキャパシタを高い生産性で製造できる。
上記した性状の異なるカーボンナノチューブをもつカーボンナノチューブ素子108を形成するにあたり、次の製造方法が例示できる。
(i)カーボンナノチューブを形成するためのカーボンナノチューブ形成面をもつ物体(対象物)を用意すると共に、物体を収容するための反応室と、反応室に収容される物体のカーボンナノチューブ形成面に間隔を隔てて対面しつつカーボンナノチューブ形成面が延設する面方向に沿って延設されたガス供給室と、ガス供給室と反応室とを連通させると共にガス供給室の反応ガスを反応室に吹き出す複数の吹出口とを有するガス通路形成部材と、物体のカーボンナノチューブ形成面、ガス通路形成部材、反応ガスのうちの少なくとも一つをカーボンナノチューブ形成温度に加熱させる加熱源とを用意する準備工程を実施する。次に、(ii)物体のカーボンナノチューブ形成面、ガス通路形成部材、反応ガスのうちの少なくとも一つをカーボンナノチューブ形成温度に加熱させた状態で、反応ガスを前記ガス供給室に供給することにより、反応室内の物体のカーボンナノチューブ形成面が延設する面方向に対して交差する方向に沿って、ガス供給室の反応ガスを吹出口から物体のカーボンナノチューブ形成面に向けて吹き出し、物体のカーボンナノチューブ形成面にカーボンナノチューブを形成するカーボンナノチューブ形成工程を実施する。
図1~図4は製造形態1を示す。カーボンナノチューブを形成するための物体1(対象物)は、互いに背向する第1カーボンナノチューブ形成面11と,第1カーボンナノチューブ形成面12とをもつ。カーボンナノチューブ製造装置は、第1カーボンナノチューブ形成面11に第1カーボンナノチューブを形成し、第2カーボンナノチューブ形成面12に第2カーボンナノチューブを形成する。ここで、図1~図3に示すように、物体1は平らな基板状をなしており、互いに背向する2次元的に延設された平坦な第1カーボンナノチューブ形成面11と、2次元的に並設された平坦な第2カーボンナノチューブ形成面12とを有する。物体1の材質は特に限定されず、シリコン、金属等が例示される。金属としては、鉄、チタン、銅、アルミニウム、鉄合金(ステンレスを含む)、チタン合金、銅合金、アルミニウム合金等が例示される。図3から理解できるように、第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12は、2次元方向に延びる平坦状とされており、一方向であるX方向(長手方向)と、これに交差(直交)する他方向であるY方向(幅方向)とに延びる。
本製造形態は前記した製造形態1と基本的には同様の構成、同様の作用効果を示す。以下、相違する部分を中心として説明する。第1反応ガスに基づいて物体1の第1カーボンナノチューブ形成面11に第1カーボンナノチューブ101を形成する第1操作と、第2反応ガスに基づいて物体1の第2カーボンナノチューブ形成面12に第2カーボンナノチューブ102を形成する第2操作とをそれぞれ独立に制御する。第1操作および第2操作をそれぞれ独立で制御する。これにより、第1カーボンナノチューブ形成面11に第1操作で形成される第1カーボンナノチューブ101の性状と、第2カーボンナノチューブ形成面12に第2操作で形成される第2カーボンナノチューブ102の性状とを変更させる。
実施例1は図1~図4に示すカーボンナノチューブ製造装置を用いて実施した。
(物体1)実施例1では、物体1の第1カーボンナノチューブ形成面11に形成される第1カーボンナノチューブ101、第2カーボンナノチューブ形成面12に形成される第2カーボンナノチューブ102について、その長さを異ならせた。物体1としては、0.5ミリメートルのシリコン基板を用いた。シリコン基板は研磨されていた。シリコン基板の第1カーボンナノチューブ101、第2カーボンナノチューブ形成面12について、表面粗さはRa5ナノメートルであった。
(前処理)第1段階として、物体1の表面を撥水処理した。処理液は、トルエンにヘキサオルガノシラザンを5体積%の濃度で配合したものとした。この処理液に物体1を30分間浸漬させた。その後、処理液から物体1を引き上げ、自然乾燥させた。第2段階として、ディップコート法により、物体1の第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12に、コーティング液を塗布し、鉄−チタン合金の薄膜を30ナノメートル形成した。触媒は島状となっていると考えられる。コーティング液は、ヘキサン中に鉄−チタン合金の粒子(質量比でFe:80%、Ti:20%)を分散させ、可視光度計(WPA社製、CO7500)にて波長680ナノメートルの測定条件で吸光度が0.3となるように濃度調整した液とした。ディップコート法では、大気中において、常温下で、浸漬した後、3ミリメートル/分間の速度で引き上げた。引き上げ後、自然乾燥にて速やかにヘキサンが蒸発した。
(CNT形成)図1~図4に示す構造をもつ熱CVD装置で形成されたカーボンナノチューブ製造装置にてカーボンナノチューブを形成した。予め、反応室30を10Paに真空引きしておくこの反応室30にキャリヤガスとして窒素ガス5000cc/分間を物体1の両面から導入し、且つ、反応室30の圧力を1×105Paに調整した。物体1の表面温度を600℃に昇温させた後、炭素源となる反応ガス(アセチレンガス)を物体1の両面から6分間導入した。この場合、両面とも1000cc/分とし、6分間導入した。これによりカーボンナノチューブを物体1の第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12の双方に形成した。図5は形成されたカーボンナノチューブを示す。反応ガスの単位時間あたりの流量がほぼ同一であるため、第1カーボンナノチューブ101の長さは約94μmであり、第2カーボンナノチューブ102は約94μmであった。
(物体1)実施例3では、物体1の第1カーボンナノチューブ形成面11に形成される第1カーボンナノチューブ101、第2カーボンナノチューブ形成面12に形成される第2カーボンナノチューブ102について、その長さを異ならせた(図7参照)。物体1は厚さ0.5ミリメートのシリコン基板とした。上面である第1カーボンナノチューブ形成面11の表面粗さはRa5ナノメートルとした。下面である第2カーボンナノチューブ形成面12の表面粗さはRa100ナノメートルとし、第1カーボンナノチューブ形成面11よりも粗い面とした。
(CNT形成)比較例1と同様とした。カーボンナノチューブを物体1の第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12の双方に形成した。図7は実施例2について形成されたカーボンナノチューブを示す。カーボンナノチューブの長さについては、上面である第1カーボンナノチューブ形成面11に形成された第1カーボンナノチューブ101は約72μmであった。下面である第2カーボンナノチューブ形成面12に形成された第2カーボンナノチューブ102は約144μmであり、第1カーボンナノチューブ101の長さの約2倍であった。
本実施例は、物体の第1カーボンナノチューブ形成面および第2カーボンナノチューブ形成面において、互いに結晶性が異なるカーボンナノチューブを形成する。
(物体1) 物体1として、厚さ0.5mmのシリコン基板を使用する。基板両面とも研磨されており、表面粗さはRa5ナノメートルとする。
(前処理) 第1段階として、物体1の表面を撥水処理する。処理液はトルエン中にヘキサオルガノシラザンを5vol%の濃度で配合したものであり、これに物体1を30分浸漬させる。その後、引上げ、自然乾燥させる。第2段階としてディップコート法にて、物体1の第1カーボンナノチューブ形成面および第2カーボンナノチューブ形成面の両面に、Fe−Ti合金薄膜を30ナノメートル形成する。コーティング液は、ヘキサン中にFe−Ti合金粒子(Fe80%−Ti20%)を分散させ、可視光度計(WPA社製CO7500)にて、波長680ナノメートルの測定条件で、吸光度が0.3になるように濃度調整する。ディップコートは、大気中、常温下で3mm/minの速度で引き上げる。引き上げ後、自然乾燥にて速やかにヘキサンが蒸発する。
本実施例は、物体の表面温度を変えて物体の第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12において、互いに結晶性が異なるカーボンナノチューブを形成する。
(物体)(前処理)(CNT形成)は、実施例1Bと全て同じとする。低結晶性のカーボンナノチューブは一般的に表面積が高い。これに対して、高結晶性のカーボンナノチューブは相対的に導電性良い。このため、低結晶性のカーボンナノチューブ同士と、低結晶性カーボンナノチューブ同士とが向き合うように積層し、並列接続することで高出力機能と高容量機能をハイブリット化させることができる。
本実施例は、物体1の第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12において、互いに太さが異なるカーボンナノチューブを形成する。
(物体1) 物体1として、厚さ0.5mmのシリコン基板を使用する。基板の両面とも研磨されており、表面粗さはRa5ナノメートルとする。
〈前処理〉 第1段階として基板表面を撥水処理する。処理液はトルエン中にヘキサオルガノシラザンを5vol%の濃度で配合したものであり、これに基板を30分浸漬させた後、引上げ、自然乾燥させる。第2段階として、スピンコート法にてシリコン基板の両面にFe薄膜を約10ナノメートル形成する。コーティング液は、ヘキサン中にFe粒子(Fe100%)を分散させ、可視光度計(WPA社製CO7500)にて波長680ナノメートルの測定条件で吸光度が0.3になるように濃度調整する。スピンコートは大気中、約5000rpmで約30秒回転させる。回転後、自然乾燥にて速やかにヘキサンが蒸発する。第3段階として、基板の第2カーボンナノチューブ形成面12(基板の第1カーボンナノチューブ形成面11の反対側の面)にスピンコート法にてシリコン基板両面にFe薄膜を10ナノメートル形成する。コーティング液はヘキサン中にFe−Ti合金薄膜を約30ナノメートル形成する。コーティング液はヘキサン中にFe−Ti合金粒子(Fe80%−Ti20%)を分散させ、可視光度計(WPA社製CO7500)にて波長680ナノメートルの測定条件で吸光度が0.3になるように濃度調整する。スピンコートは大気中、約5000rpmで約30秒回転させる。回転後、自然乾燥にて速やかにヘキサンが蒸発する。
本実施例は、物体1の第1カーボンナノチューブ形成面11および第2カーボンナノチューブ形成面12において、単位面積あたり互いに本数が異なるカーボンナノチューブを形成する。
(基板) 物体1として、厚さ0.5mmのシリコン基板を使用する。基板の両面とも研磨されており、表面粗さはRa5ナノメートルとする。
〈前処理〉 第1段階として基板の表面を撥水処理する。処理液はトルエン中にヘキサオルガノシラザンを5vol%の濃度で配合したものであり、これに基板を30分浸漬させた後、引上げ、自然乾燥させる。第2段階としてディップコート法にてシリコン基板両面にFe−Ti合金薄膜を30ナノメートル形成する。コーティング液はヘキサン中 にFe−Ti合金粒子(Fe80%−Ti20%)を分散させ、可視光度計(WPA社製CO7500)にて波長680ナノメートルの測定条件で吸光度が0.3になるように濃度調整する。ディップコートは大気中、常温下で3mm/min.の速度で引き上げる。引き上げ後、自然乾燥にて速やかにヘキサンが蒸発する。
図8は製造形態3を示す。本製造形態は前記した製造形態1,2と基本的には同様の構成、同様の作用効果を示す。以下、相違する部分を中心として説明する。図8に示すように、第1ガス供給室51の一端51e側には供給通路810が設けられ、第1反応ガス用の供給バルブ810a,キャリヤガス用の供給バルブ810cが設けられている。図8に示すように、第1ガス供給室51の他端側51fには供給通路811が設けられ、第1反応ガス用の供給バルブ811a,キャリヤガス用の供給バルブ811cが設けられている。第1ガス供給室51に第1反応ガスを供給するとき、第1ガス供給室51の一端51e側と他端51f側とにおいて、単位時間あたりのガス流量を制御できる。この場合、第1カーボンナノチューブ形成面11について、一端51e側と他端51f側とにおいて、第1カーボンナノチューブ11の性状(カーボンナノチューブの長さ、径、本数、層数、結晶性、欠陥量、官能基種、官能基量、密度、重量、分布等のうちの少なくとも1つ)を変更させることを期待できる。
図9は製造形態4を示す。本製造形態は前記した製造形態1~3と基本的には同様の構成、同様の作用効果を示す。以下、相違する部分を中心として説明する。図9に示すように、第1ガス供給室51および第2ガス供給室52は横方向(水平方向)に沿って延設されている。第1反応ガスは、第1ガス供給室51に矢印W1方向(一方向,図9において右方)に向けて供給される。その第1反応ガスは、複数の第1吹出口41から下方向に沿って物体1の第1カーボンナノチューブ形成面11にほぼ垂直に衝突するように吹き出される。第2反応ガスは第2ガス供給室52に矢印W2方向(一方向,図9において右方)に供給される。その第2反応ガスは、複数の第2吹出口42から上方向に沿って物体1の第2カーボンナノチューブ形成面12にほぼ垂直に衝突するように吹き出される。
図10は製造形態5を示す。本製造形態は前記した製造形態1~4と基本的には同様の構成、同様の作用効果を示す。以下、相違する部分を中心として説明する。図10に示すように、第1ガス供給室51および第2ガス供給室52は、互いに対向する箱状通路とされつつも、縦方向(高さ方向,矢印H方向)に沿って延設されている。物体1は縦方向に沿って配置されており、上部1u,下部1dをもつ。カーボンナノチューブ形成面11,12は高さ方向(矢印H方向)に沿って延設されている。第1ガス供給室51に供給された第1反応ガスは、複数の第1吹出口41から横方向に沿って物体1の第1カーボンナノチューブ形成面11にほぼ85~95°の角度、好ましくは90°で衝突するように吹き出される。第2ガス供給室52に供給された第2反応ガスは、複数の第2吹出口42から横方向に沿って物体1の第2カーボンナノチューブ形成面12にほぼ85~95°の角度、好ましくは90°で衝突するように吹き出される。
図11は製造形態6を示す。本製造形態は前記した製造形態1~5と基本的には同様の構成、同様の作用効果を示す。図11に示すように、第1対面壁31および第1ガス供給室51は、板状の物体1の第1カーボンナノチューブ形成面11の面方向に沿って二次元的に横方向に沿って延設されている。横方向に延びる第1対面壁31を利用して形成されている第1ガス供給室51は、板状の物体1の第1カーボンナノチューブ形成面11の面方向に沿って二次元的に横方向に沿って延設されている。このような第1ガス供給室51は、第1カーボンナノチューブ形成面11に対向する偏平な箱状通路とされている。第1吹出口41は、第1対面壁31のほぼ全域に散点状にほぼ均等間隔で形成されている。第1ガス供給室51に供給された第1反応ガスは、複数の第1吹出口41から下方向に沿って物体1の第1カーボンナノチューブ形成面11にほぼ垂直に衝突するように吹き出される。第2ガス供給室52は形成されていないため、物体1のうち主として第1カーボンナノチューブ形成面11にカーボンナノチューブが形成される。
図12は製造形態7を示す。本製造形態は前記した製造形態1~6と基本的には同様の構成、同様の作用効果を示す。図12に示すように、第1反応ガスの吹き出しの際に、各第1吹出口41から物体1の同一の第1カーボンナノチューブ形成面11までの最短距離L1とする。最短距離L1を100として相対表示するとき、各第1吹出口41にわたり、90~110の範囲内(特に95~105の範囲内,100)に設定されている。このため各第1吹出口41から物体1の第1カーボンナノチューブ形成面11までの最短距離L1が均衡化されている。この場合、第1カーボンナノチューブ形成面11において形成される第1カーボンナノチューブ101の全体のばらつきが抑制される。
Claims (11)
- 第1カーボンナノチューブ形成面および第2カーボンナノチューブ形成面をもつ物体と、
前記物体の前記第1カーボンナノチューブ形成面に形成された第1カーボンナノチューブと、
前記物体の前記第2カーボンナノチューブ形成面に形成され前記第1カーボンナノチューブに対して性状が相違する第2カーボンナノチューブとを備えるカーボンナノチューブ素子を、
具備するカーボンナノチューブデバイス。 - 請求項1において、前記性状は、前記カーボンナノチューブの長さ、径、単位面積あたりの本数、層数、結晶性、欠陥量、官能基種、官能基量、密度、重量、分布等のうちの少なくとも1つであるカーボンナノチューブデバイス。
- 請求項1または2において、複数の前記カーボンナノチューブ素子が並設されており、
隣接する前記カーボンナノチューブ素子の前記第1カーボンナノチューブ同士が互いに対向すると共に、隣接する前記カーボンナノチューブ素子の前記第2カーボンナノチューブ同士が互いに対向するように配置されているカーボンナノチューブデバイス。 - 請求項1または2において、複数の前記カーボンナノチューブ素子が並設されており、
互いに隣接する前記カーボンナノチューブ素子の前記第1カーボンナノチューブおよび前記第2カーボンナノチューブが互いに対向するように配置されているカーボンナノチューブデバイス。 - (i)カーボンナノチューブを形成するためのカーボンナノチューブ形成面をもつ対象物を用意すると共に、
前記対象物を収容するための反応室と、前記反応室に収容される前記対象物の前記カーボンナノチューブ形成面に間隔を隔てて対面しつつ前記カーボンナノチューブ形成面が延設する面方向に沿って延設されたガス供給室と、前記ガス供給室と前記反応室とを連通させると共に前記ガス供給室の反応ガスを前記反応室に吹き出す複数の吹出口とを有するガス通路形成部材と、前記対象物の前記カーボンナノチューブ形成面、前記ガス通路形成部材、前記反応ガスのうちの少なくとも一つをカーボンナノチューブ形成温度に加熱させる加熱源とを用意する準備工程と、
(ii)前記対象物の前記カーボンナノチューブ形成面、前記ガス通路形成部材、前記反応ガスのうちの少なくとも一つをカーボンナノチューブ形成温度に加熱させた状態で、
前記反応ガスを前記ガス供給室に供給することにより、前記反応室内の前記対象物の前記カーボンナノチューブ形成面が延設する面方向に対して交差する方向に沿って、前記ガス供給室の前記反応ガスを前記吹出口から前記対象物の前記カーボンナノチューブ形成面に向けて吹き出し、前記対象物の前記カーボンナノチューブ形成面に前記カーボンナノチューブを形成するカーボンナノチューブ形成工程とを実施するカーボンナノチューブ製造方法。 - 請求項5において、前記反応ガスの吹き出しの際に、前記吹出口から前記対象物の前記カーボンナノチューブ形成面までの最短距離Lを100として相対表示するとき、各前記吹出口にわたり最短距離Lは75~125の範囲内に設定され、各前記吹出口から前記対象物の前記カーボンナノチューブ形成面までの最短距離Lが各前記吹出口について均衡化されているカーボンナノチューブ製造方法。
- 請求項5または6において、前記対象物の前記カーボンナノチューブ形成面は、第1カーボンナノチューブ形成面と第2カーボンナノチューブ形成面とを有しており、前記第1カーボンナノチューブ形成面に前記カーボンナノチューブを形成する第1操作と、前記第2カーボンナノチューブ形成面に前記カーボンナノチューブを形成する第2操作とを独立に制御するカーボンナノチューブ製造方法。
- カーボンナノチューブを形成するためのカーボンナノチューブ形成面をもつ対象物にカーボンナノチューブを製造するカーボンナノチューブ製造装置であって、
(i)基体と、
(ii)前記基体に設けられ、前記対象物の前記カーボンナノチューブ形成面に間隔を隔てて対面しつつ前記対象物の前記カーボンナノチューブ形成面が延設する面方向に沿って延設された対面壁と、前記対面壁にこれを貫通するように形成された複数の吹出口と、前記対面壁を用いて前記対象物の前記カーボンナノチューブ形成面が延設する面方向に沿って延設され且つ前記吹出口に連通するガス供給室と、前記反応室に連通するガス排出通路とを有するガス通路形成部材と、
(iii)前記基体に設けられ、前記対象物の前記カーボンナノチューブ形成面、前記ガス通路形成部材、前記反応ガスのうちの少なくとも一つをカーボンナノチューブ形成温度に加熱させる加熱源とを具備するカーボンナノチューブ製造装置。 - 請求項8において、各前記吹出口の中心線から前記対象物に向けて延びる延長線は、前記対象物の前記カーボンナノチューブ形成面が延設する面方向に対して所定角度θ(θ=70~110°)以内で交差するように設定されているカーボンナノチューブ製造装置。
- 請求項8または9において、前記対象物の前記カーボンナノチューブ形成面は、互いに異なる位置に設けられた第1カーボンナノチューブ形成面と第2カーボンナノチューブ形成面とを有しており、
前記対面壁は、前記対象物の前記第1カーボンナノチューブ形成面に第1間隔を隔てて対面する第1対面壁と、前記対象物の前記第2カーボンナノチューブ形成面に第2間隔を隔てて対面する第2対面壁とを有しており、
前記吹出口は、前記第1対面壁に形成された第1吹出口と、前記第2対面壁に形成された第2吹出口とを有しており、
前記ガス供給室は、第1ガス供給通路に繋がると共に前記第1吹出口に連通する第1ガス供給室と、第2ガス供給通路に繋がると共に前記第2吹出口に連通する第2ガス供給室とを有しており、
前記加熱源は、前記第1カーボンナノチューブ形成面に前記カーボンナノチューブを形成する第1反応ガス、前記対象物の前記第1カーボンナノチューブ形成面、前記第1ガス供給室のうちの少なくとも一つを第1カーボンナノチューブ形成温度に加熱させる第1加熱源と、前記第2カーボンナノチューブ形成面にカーボンナノチューブを形成する第2反応ガス、前記対象物の第2カーボンナノチューブ形成面、前記第2ガス供給室のうちの少なくとも一つを第2カーボンナノチューブ形成温度に加熱させる第2加熱源とを具備するカーボンナノチューブ製造装置。 - 請求項8~10のうちの一項において、前記ガス通路形成部材の前記反応室の出口は、前記対象物の側端面に対面する位置に配置されているカーボンナノチューブ製造装置。
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