WO2012004106A1 - Connexion électrique entre deux surfaces de contact - Google Patents

Connexion électrique entre deux surfaces de contact Download PDF

Info

Publication number
WO2012004106A1
WO2012004106A1 PCT/EP2011/060031 EP2011060031W WO2012004106A1 WO 2012004106 A1 WO2012004106 A1 WO 2012004106A1 EP 2011060031 W EP2011060031 W EP 2011060031W WO 2012004106 A1 WO2012004106 A1 WO 2012004106A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
contact surfaces
conductive connection
metal
metal wire
Prior art date
Application number
PCT/EP2011/060031
Other languages
German (de)
English (en)
Inventor
Hans Rappl
Original Assignee
Continental Automotive Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Automotive Gmbh filed Critical Continental Automotive Gmbh
Publication of WO2012004106A1 publication Critical patent/WO2012004106A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/38—Conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45025—Plural core members
    • H01L2224/4503—Stacked arrangements
    • H01L2224/45032—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H01R4/023—Soldered or welded connections between cables or wires and terminals

Definitions

  • Metal ribbon Such an electrically conductive connection is known for example from DE 10 2006 025 870 AI. There are two contact surfaces by means of one of several layers
  • Bonden is a long-known
  • the object of the invention is to provide an electrically conductive connection that allows the connection of different contact surfaces while still being automated and thus inexpensive to manufacture.
  • the object is achieved in a generic electrically conductive connection characterized in that at least one of the connected to the contact surfaces by bonding ends of the metal wire or metal strip in addition to the
  • Connection could not be permanently charged. By the additional welding process according to the invention, however, a good electrical and mechanically stable connection is achieved.
  • the contact surface to be welded is relatively thin, for example a copper conductor on a printed circuit board (PCB), a metal plate is advantageously applied to this contact surface, for example soldered, onto which then the end of the metal wire or
  • PCB printed circuit board
  • Metallbitzchens first bonded and then welded. This process is also easy to automate, since the metal plate can be applied and soldered together with semiconductor or other components to be placed, for example.
  • Figure 3 The arrangement of a metal plate on a
  • FIG. 1 shows a first circuit carrier 1, from which an electrically conductive connection is made to a second circuit carrier 2.
  • an electrical component 3 is arranged on the first circuit carrier 1 and a first contact surface 12 is provided.
  • the second circuit carrier 2 is formed metallic in the example shown.
  • a bond ribbon 4 which is constructed in the illustrated example of two layers, which are indicated by a dashed line.
  • the first layer 5 is made of copper, for example, and the second layer 7 of aluminum, so that on the one hand a high current carrying capacity is given by the copper and good bondability through the aluminum.
  • the bond ribbon may have the usual rectangular cross section today, but any cross sections, as disclosed for example in DE 10 2006 025 868 AI, possible.
  • the invention is instead of a bond ribbon with a
  • Such a coated tape has the advantage of being for bonding at first
  • Circuit board 1 is optimally suited.
  • multi-layer ribbon can be used in sandwich construction. It is also possible to use tapes with surfaces that are applied, for example, galvanically or chemically. Here, surface layers in the range of a few hundred to several micrometers are possible.
  • FIG. 2 shows short weld seams 11 which connect the copper layer 5 of the bonding tape 4 to the metal of the second circuit substrate 2.
  • the aluminum layer 7 is bridged. Instead of the short welds, a continuous weld seam can also be guided around the contact point.
  • the welding process can be produced by resistance welding, gap electrode welding or other welding methods. Laser welding is particularly suitable because it allows fully automatic production of welds in an adapted form.
  • the second circuit substrate 2 is not made of solid metal but, for example, as a printed circuit board with copper conductor tracks 8 applied thereon
  • Copper tracks 8 a weld with a on it

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

L'invention concerne une connexion électrique entre deux surfaces de contact (1, 2) au moyen d'un fil métallique ou d'une bandelette métallique (4) connecté aux surfaces de contact (1, 2) par métallisation, au moins une des extrémités du fil métallique ou de la bandelette métallique (4) connectées aux surfaces de contact (1, 2) par métallisation étant soudée (11) par ailleurs à la surface de contact (2, 8).
PCT/EP2011/060031 2010-07-06 2011-06-16 Connexion électrique entre deux surfaces de contact WO2012004106A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010030966A DE102010030966B4 (de) 2010-07-06 2010-07-06 Elektrisch leitende Verbindung zwischen zwei Kontaktflächen
DE102010030966.4 2010-07-06

Publications (1)

Publication Number Publication Date
WO2012004106A1 true WO2012004106A1 (fr) 2012-01-12

Family

ID=44246610

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/060031 WO2012004106A1 (fr) 2010-07-06 2011-06-16 Connexion électrique entre deux surfaces de contact

Country Status (2)

Country Link
DE (1) DE102010030966B4 (fr)
WO (1) WO2012004106A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015219229A1 (de) 2015-10-06 2017-04-06 Continental Automotive Gmbh Verfahren zum Verbinden eines Drahtendes mit einer Kontaktfläche

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013218757B4 (de) 2013-09-19 2023-06-07 Zf Friedrichshafen Ag Verfahren zum Herstellen eines Gesamtmoduls, Gesamtmodul und Getriebe für ein Fahrzeug
DE102021207276A1 (de) * 2021-07-09 2023-01-12 Robert Bosch Gesellschaft mit beschränkter Haftung Verbindungsanordnung, insbesondere zur Verwendung in Elektrofahrzeugen oder Hybridfahrzeugen

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280626A (ja) * 1985-05-08 1986-12-11 Sanyo Electric Co Ltd ワイヤボンデイング方法
US5960262A (en) * 1997-09-26 1999-09-28 Texas Instruments Incorporated Stitch bond enhancement for hard-to-bond materials
US20030019098A1 (en) * 1998-05-27 2003-01-30 Ingolf Wildner Method and contact point for establishing an electrical connection
DE102006025870A1 (de) 2006-06-02 2007-12-06 Robert Bosch Gmbh Mehrschichtiges Bond-Bändchen
DE102006025868A1 (de) 2006-06-02 2007-12-06 Robert Bosch Gmbh Bonddraht und Bondverbindung mit einem Bonddraht
DE102006025867A1 (de) * 2006-06-02 2007-12-06 Robert Bosch Gmbh Bondverbindung sowie Verfahren zum Bonden zweier Kontaktflächen
US20080124547A1 (en) * 2006-11-28 2008-05-29 Samsung Electronics Co., Ltd. Partially insulation coated metal wire for wire bonding and wire bonding method for semiconductor package using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164176B2 (en) * 2006-10-20 2012-04-24 Infineon Technologies Ag Semiconductor module arrangement

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280626A (ja) * 1985-05-08 1986-12-11 Sanyo Electric Co Ltd ワイヤボンデイング方法
US5960262A (en) * 1997-09-26 1999-09-28 Texas Instruments Incorporated Stitch bond enhancement for hard-to-bond materials
US20030019098A1 (en) * 1998-05-27 2003-01-30 Ingolf Wildner Method and contact point for establishing an electrical connection
DE102006025870A1 (de) 2006-06-02 2007-12-06 Robert Bosch Gmbh Mehrschichtiges Bond-Bändchen
DE102006025868A1 (de) 2006-06-02 2007-12-06 Robert Bosch Gmbh Bonddraht und Bondverbindung mit einem Bonddraht
DE102006025867A1 (de) * 2006-06-02 2007-12-06 Robert Bosch Gmbh Bondverbindung sowie Verfahren zum Bonden zweier Kontaktflächen
US20080124547A1 (en) * 2006-11-28 2008-05-29 Samsung Electronics Co., Ltd. Partially insulation coated metal wire for wire bonding and wire bonding method for semiconductor package using the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SMITH M: "LA SOUDURE PAR ULTRASON", TOUTE L'ELECTRONIQUE, SOCIETE DES EDITIONS RADIO. PARIS, FR, no. 546, 1 August 1989 (1989-08-01), pages 76 - 81, XP000068263 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015219229A1 (de) 2015-10-06 2017-04-06 Continental Automotive Gmbh Verfahren zum Verbinden eines Drahtendes mit einer Kontaktfläche

Also Published As

Publication number Publication date
DE102010030966B4 (de) 2012-04-19
DE102010030966A1 (de) 2012-01-12

Similar Documents

Publication Publication Date Title
EP3262667B1 (fr) Terminal electrique pour composant en ceramique, composant en ceramique, ensemble de composants et procédé de manufacture
US7570477B2 (en) Ceramic electronic component and method for manufacturing the same
EP1980143B1 (fr) Carte de circuits imprimés comportant des éléments fonctionnels supplémentaires, son procédé de production et son utilisation
DE102005049687A1 (de) Leistungshalbleiterbauteil in Flachleitertechnik mit vertikalem Strompfad
EP2516321B1 (fr) Capteur comportant un substrat céramique de préférence multicouche et procédé de fabrication correspondant
EP1841299A2 (fr) Dispositif de liaison pour composant électrique
DE102018214495A1 (de) Spulenkomponente und mit einer spulenkomponente ausgestattetes befestigungssubstrat
DE102014105000B4 (de) Verfahren zur Herstellung und zum Bestücken eines Schaltungsträgers
EP3508040B1 (fr) Circuit imprimé et procédé de fabrication d'un circuit imprimé
DE102013226549B4 (de) Verfahren zur Herstellung einer Leiterplatte
DE102010030966B4 (de) Elektrisch leitende Verbindung zwischen zwei Kontaktflächen
DE3788263T2 (de) Verfahren zum elektrischen Verbinden von zwei Objekten.
DE10103084B4 (de) Halbleitermodul und Verfahren zu seiner Herstellung
DE112017005109T5 (de) ELEKTRONISCHE KOMPONENTE ZUM SCHWEIßEN, MONTIERTE PLATINE UND TEMPERATURSENSOR
DE102004059389B4 (de) Halbleiterbauelement mit Ausgleichsmetallisierung
DE102009016842B4 (de) Leitungsgitter für Elektronikgehäuse und Herstellungsverfahren
DE102006060899A1 (de) Anschlussdraht, Verfahren zur Herstellung eines solchen und Baugruppe
DE112017006956B4 (de) Verfahren zur Herstellung einer Leistungshalbleitervorrichtung und Leistungshalbleitervorrichtung
DE102018215686A1 (de) Leiterplatte und Planer Transformatorgebiet der Erfindung
DE102018209534A1 (de) Spulenkomponente und Herstellungsverfahren derselben
DE102013202232B4 (de) Leiterplatte mit wärmebeständigem Leitungsdraht und Verfahren zu deren Herstellung
DE2546443C3 (de) Zusammengesetzte Mikroschaltung und Verfahren zu ihrer Herstellung
DE202020101197U1 (de) Temperatursensorverbund
WO2015067792A1 (fr) Grille de connexion et son utilisation
AT404207B (de) Verfahren zum herstellen elektrischer schaltkreise

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11725115

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11725115

Country of ref document: EP

Kind code of ref document: A1