WO2012003790A1 - Integrated circuit parallel testing method, device, and system - Google Patents

Integrated circuit parallel testing method, device, and system Download PDF

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Publication number
WO2012003790A1
WO2012003790A1 PCT/CN2011/076808 CN2011076808W WO2012003790A1 WO 2012003790 A1 WO2012003790 A1 WO 2012003790A1 CN 2011076808 W CN2011076808 W CN 2011076808W WO 2012003790 A1 WO2012003790 A1 WO 2012003790A1
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Prior art keywords
test
circuit
output
input
wafer
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PCT/CN2011/076808
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French (fr)
Chinese (zh)
Inventor
林正浩
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上海芯豪微电子有限公司
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Publication of WO2012003790A1 publication Critical patent/WO2012003790A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2884Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test

Definitions

  • the invention belongs to the field of integrated circuits, and in particular relates to a parallel test method, device and system for an integrated circuit.
  • a typical semiconductor fabrication process is in a thin, uniform wafer of semiconductor material (wafer A plurality of identical rectangular dies are fabricated on the substrate. The grains are separated by a scribe line with a width of 60 to 80 microns. a mask is often placed on the scribe line (mask The alignment mark and the test component of the wafer acceptance test (WAT) that monitors the quality during production.
  • WAT wafer acceptance test
  • the lithography machine exposes one area at a time, called the lithography area (stepper field) Each lithographic area contains one or more dies.
  • the wafer prober uses a pin test card ( Pobe card ) contacts the pad of the die to be tested, transmits the test stimulus generated by the test program to the die to be tested, and the measured die responds to the input to generate a corresponding output, which is transmitted to the test device via the pin test card ( The tester is compared with the expected result. If the two are equal/matched, the measured die is considered to be functional. Test one die at a time.
  • Pobe card pin test card
  • a measured die passes all test procedures, its position is recorded for preparation for subsequent packaging. Tested dies that have not passed the test will be marked with ink or stored in a location called a wafer map ( Wafermap )document. When all the tests are completed, the wafer will be cut along the scribe line, the properly functional dies that are separated will be packaged, and the failed dies will be discarded. The packaged chip will be tested after packaging and the functionally correct chip will be delivered to the customer.
  • Wafermap wafer map
  • Figure 1 is a schematic diagram of a general wafer test in which a wafer to be tested (101) is placed on a wafer test device ( 102), the tester (103) transmits the test stimulus generated by the test vector generator (104) to the pin test card on the test head (106) through the input cable (105) (107)
  • the needle card (107) inputs the data into the die (108) to be tested, and reads the operation result from the die (108) to be tested, passing the test head (106) and the output cable (111). Passed to the tester (103), the tester (103) sends the result to the comparator (109) and compares it with the expected result (110) to determine whether the die (107) to be tested has failed.
  • the size of wafers has increased from 1 inch to 12 Inches, the parallelism of die production is constantly increasing, and it can accommodate nearly 10,000 grains per wafer.
  • the wafer test time is proportional to the number of die on the wafer, the test time becomes extremely long, and the test cost becomes very high.
  • the probe Probe
  • the time to move to another die after testing one die is 100ms ⁇ 250ms This time cannot be used for testing and was wasted. This further increases test time and increases test costs.
  • the cost of testing and packaging has accounted for about 25% to 30% of the total production cost. Even reached 50%.
  • test equipment to die connection delay limits the test frequency, the test can only be performed at a lower frequency.
  • Another method is to implement on-wafer chip self-testing.
  • the following three patents relate to this method, but are different from this patent.
  • Patent No. 200510008164.X The Chinese patent 'wafers that can perform aging and electrical testing and their implementation methods' propose a method for simultaneous aging and electrical testing on a wafer.
  • the method sets an aging pattern generating circuit on the wafer (aging Pattern generation circuit)
  • the circuit can generate non-functional, continuously inverted excitations into the die while performing aging and electrical testing without the need to output test results to the test equipment.
  • Patent No. 200410046002.0 The Chinese patent 'Semiconductor wafer with test circuit and manufacturing method' proposes a method for accurately measuring the chip voltage on a wafer.
  • the method sets a test circuit on the scribe line, so that the output impedance is much smaller than the impedance of the probe, and the input impedance is much larger than the output impedance of the die, so that the probe can accurately measure the reference voltage of each electrode pad of the die.
  • Patent No. 86105604 The Chinese patent 'Circuit Structure for Testing Integrated Circuit Components' proposes a test circuit structure based on circuit components on a substrate.
  • the circuit components under test are formed as an integrated circuit on a common substrate and are operable via common supply and input lines on the substrate.
  • the test circuit and the switch unit of the circuit structure are formed as an integrated circuit on the same substrate, and the switch unit can be controlled by the test circuit and inserted in the connection between the test circuit and the circuit component, and the expected value is transmitted to the substrate for use.
  • the circuit is compared for comparison.
  • the test circuit is equipped with an output circuit that transmits the test result.
  • the self-test uses the central unit of the test circuit to compare the actual and expected values to determine whether the component is qualified or not, and serially tests.
  • the invention proposes a parallel on a common substrate (parallel Test a plurality of functionally identical microelectronic circuits (microelectronic circuit)
  • An integrated circuit test method, apparatus, and system comprising a plurality of units that perform the same test excitation on a common substrate, and a plurality of units to be tested by a comparison device (device under test, DUT).
  • the output signal is compared in parallel with the expected result, or the signals of the corresponding output ends of the plurality of measured units are compared with each other by the comparing device to detect the failed unit under test.
  • the invention realizes parallel testing of thousands of units to be tested without substantially increasing the test channel.
  • the present invention provides an integrated circuit test method for testing a plurality of functionally identical microelectronic circuits in parallel on a common substrate;
  • the substrate may be a wafer or a single integrated circuit chip ( An integrated circuit chip ), which may also be a circuit board; wherein the method includes:
  • the present invention also provides an integrated circuit testing method for testing a plurality of functionally identical microelectronic circuits in parallel on a common substrate;
  • the substrate may be a wafer, a single integrated circuit chip, or a circuit board;
  • the method includes:
  • the present invention provides a wafer comprising a plurality of functionally identical dies to be tested, wherein the functional modules of the plurality of dies or the plurality of dies having the same function are the units to be tested; wherein the wafer is on the wafer Also included is an auxiliary test device fabricated by a semiconductor process; the auxiliary test device may be partially located inside the unit to be tested, or may be entirely located outside the unit to be tested, including:
  • the output circuit is connected to a plurality of register circuits, and outputs a comparison result of the corresponding comparison device and position information of the corresponding measured unit.
  • the auxiliary test device on the wafer of the present invention When the auxiliary test device on the wafer of the present invention is located inside the die to be tested, the auxiliary test device can be set to be inactive when the measured die is working normally (dis When the auxiliary test device is located outside the die to be tested, the electrical connection between the auxiliary test device and the die to be tested can be completely cut off when the wafer is cut.
  • the additional test pads required for testing on the wafer of the present invention can be placed in the die or placed on the cutting track (scribe Line ) can also be placed in the unused corner pad of the die, and can also be placed in the unused pad of the die (no connection pad) Position; during testing, the probe contacts a port pad or test pad corresponding to a single or a plurality of dies on the wafer, and the power and signal can be transmitted to the wafer through the input channel.
  • the grains in the defined area can be placed in the die or placed on the cutting track (scribe Line ) can also be placed in the unused corner pad of the die, and can also be placed in the unused pad of the die (no connection pad) Position; during testing, the probe contacts a port pad or test pad corresponding to a single or a plurality of dies on the wafer, and the power and signal can be transmitted to the wafer through the input channel.
  • the unit under test on the wafer of the present invention can wirelessly obtain power by means of electromagnetic waves.
  • the power supply circuit on the wafer of the present invention can also be connected to the power input terminals of a plurality of units to be tested.
  • the power supply circuit on the wafer of the present invention may be composed of hardwired or configurable (configurable)
  • the switch circuit is constructed or composed of a hardwired and configurable switch circuit.
  • the input path on the wafer of the present invention can be connected by a wired interconnection circuit electrically connected to the signal input end of the unit under test, or a direct transmission mode of electromagnetic waves, or a hybrid connection of electrical interconnection of wired interconnection circuits and direct transmission of electromagnetic waves. And a control signal is input to the plurality of measured units on the wafer.
  • the wired connection between the input path on the wafer and the unit under test and the comparison device of the present invention may be formed by hard wiring, or by a configurable switching line, or by a combination of hard wiring and configurable switching lines.
  • the input path on the wafer of the present invention may further comprise a conversion device connected to the device under test for converting the input signal and then inputting to the input terminal.
  • the conversion includes, but is not limited to, conversion of a digital signal to an analog signal or conversion of an analog signal to a digital signal.
  • the on/off of the circuit connection in the wired interconnection circuit can be configured by an external device in a parallel or serial configuration manner.
  • the circuit connection corresponding to the input end is configured to be turned on, and the circuit connection corresponding to the output end is configured to be disconnected.
  • connection in the direction away from the position where the test excitation source is located is turned on and the connection in the opposite direction is disconnected, thereby forming each The propagation network of the same test excitation input between the units is measured so that the plurality of units under test obtain the same test excitation.
  • the wired interconnect circuit of the present invention includes a drive-connectable connection between each of the measured dies corresponding to the input. Configuring the connection between the different measured dies corresponding to the input end, according to the position of the test excitation source, turning on the drive connection away from the position where the test excitation source is located and disconnecting the opposite direction
  • the driving connection can form a propagation network of the same test excitation input between the measured crystal grains, so that each measured crystal obtains the same test excitation.
  • the comparing device on the wafer of the present invention is configured to sample the signal of the output end of each of the plurality of tested units and compare them with the corresponding expected result input from the input path, or to measure the plurality of measured
  • the signals of the output of each unit under test in the unit and the corresponding output of the unit under test are sampled and compared with each other.
  • the comparing means on the wafer of the present invention may comprise switching means coupled to the unit under test for converting the signal at the output prior to comparison.
  • the comparison device on the wafer of the present invention may further comprise a result merging compression device for temporally and spatially merging compression of the comparison result.
  • the merging compression in time that is, the comparing means may further include accumulation connected to the unit to be tested ( Accumulate circuit for accumulating and registering the output of the comparison device.
  • the spatial merge compression combines the comparison results of the adjacent plurality of outputs of the same measured unit into one result.
  • the comparing device for testing the unit under test on the wafer in parallel, for applying the same excitation to the input end of each unit under test, outputting, converting and comparing the output and the expectation of the output end of the output end Whether the results are equal / Match, or output, convert, and compare the corresponding output outputs of a plurality of measured units.
  • the output of the output terminal may be a signal value on an external output port of the unit under test, or may be a signal value inside the unit under test.
  • the output sampling point of the output terminal may be an external output port of the unit under test, or may be a sampling point inside the unit under test.
  • the sampled sample can be any form of signal including, but not limited to, a digital signal, an analog signal.
  • the conversion includes, but is not limited to, simulating a conversion of a signal such as current, voltage, impedance, etc. to a digital signal or a conversion of a digital signal to an analog signal.
  • the comparison may be a parallel comparison between the running results of the tested units and the expected results of the incoming, or may be a parallel comparison between the operating results of the tested units.
  • a single or multiple output signals of a single or a plurality of measured units can be sampled to ensure that the change of the signal at the output or the output is correct to avoid Some errors, such as a power failure, cause the unit under test to be inoperable, but the results of the operation show a valid misjudgment.
  • the singular or plural output signals may be singular bits or a plurality of bits of the digital output, or may be one or more ports of the simulated output.
  • the plurality of bits or ports may be taken from different units to be tested.
  • the sampling judgment may be performed by sampling the corresponding single or plural operation result signals and sending them to an external device for judgment, or may use the functional modules on the wafer to sample the corresponding single or plural operation result signals. Judgment.
  • the functional modules include, but are not limited to, a counter.
  • the determining method includes, but is not limited to, checking whether the number of signal changes recorded by the counter is consistent with expectations.
  • the above-mentioned sampling and judging method can be described by taking a microprocessor die as an example.
  • This embodiment is implemented on the premise of the technical solution of the present invention, but the present invention is not limited by the embodiment.
  • the corresponding counter has a storage function that can store the recorded value. The counter is initially zero. After the test vector is started, the logic value of the signal is detected every internal clock cycle of the microprocessor, and each logic is detected. 1 , the corresponding counter increments 1 . After all test vectors have been run, if the value stored in the corresponding counter is consistent with the expected value, it means that the test is valid, and the tested unit can be determined according to the corresponding test characteristics. If the value stored in the corresponding counter does not match the expected value, it means that the test is invalid or the unit under test is invalid.
  • DC characteristics of the unit under test are compared to determine whether the DC characteristic value satisfies the requirements.
  • the comparison includes, but is not limited to, a comparison with a reference DC characteristic, and a comparison between a plurality of measured unit DC characteristic values.
  • the comparison means may be a device that includes only sampling and comparison functions, or may be a device that includes sampling, conversion, and comparison functions.
  • the operation result may be sampled first, and then the samples obtained by sampling may be compared; or the running results may be continuously compared, and the continuous comparison result may be sampled as an actual comparison result.
  • the comparison device may also include a failure determination function.
  • the specific determination method is: if the output signal of the output of the unit under test is equal to the expected result / Matching, it can be determined that the unit under test is a valid unit; if the output signal of the output of the unit under test is not equal to the expected result / If there is no match, it can be determined that the unit under test is a suspected failure unit.
  • the specific determination method is: the output signal of the output of each unit under test is compared with the output signal of the corresponding output of the adjacent single or multiple units under test, if all comparisons are completely equal / If the match is made, the unit under test can be determined to be a valid unit, otherwise the unit under test can be determined to be a suspected failed unit. For the suspected failed unit, further judgment can be made according to a simple rule, which can be implemented on the wafer including the unit under test, or can be implemented outside the wafer including the unit under test. Since the number of effective units in the measured unit is far more than the number of failed units, for the suspected failed unit, the conventional test excitation can be separately performed as needed to determine whether it is a true failed unit.
  • the comparing means may be means for judging whether the two inputs are equal, that is, the comparison result is correct when the two inputs are equal, and the comparison result is an error when the two inputs are not equal; or may be used to judge the difference between the two inputs. Whether the value is within a predetermined range, that is, when the difference between the two inputs is within the predetermined interval, the comparison result is correct, and if the difference between the two inputs is not within the predetermined interval, the comparison result is an error.
  • the port of the unit under test on the wafer of the present invention is used as an input and test/output bidirectional ( Bi-directional) multiplexing, which sets the corresponding input path connected to the port to high impedance when the port is used as an output.
  • the output bidirectional multiplexer can also have an additional output corresponding to the port for testing the bidirectional multiplexed port.
  • the input and test/output bi-directional multiplexers and the additional outputs are both coupled to a comparison device.
  • the output circuit on the wafer of the present invention may be constructed of hardwired or constructed of configurable switch lines or by a combination of hardwired and configurable switch lines.
  • the output circuit for testing the unit under test on the wafer in parallel can output position information of a plurality of measured units in the wafer and the result of the corresponding comparison device to the probe, probe card or test Machine.
  • the output circuit can be configurable or fixed. When the output circuit is configurable, it includes an output path and a connection switch, and each output path is connected to a single number or a plurality of comparison devices. According to the configuration of the conduction connection switch, different output paths at both ends of the connection switch can be connected into a single number of output paths. According to the configuration, the connection switches are disconnected, and the different output paths at both ends of the connection switch are independent output paths.
  • the connection switch can be omitted.
  • the output mode of the output circuit includes, but is not limited to, a serial output, such as serial output of a single number of output paths to output corresponding output information, or parallel output, such as multi-probe parallel acquisition of corresponding output information from a plurality of output paths, or
  • the serial parallel hybrid outputs the corresponding output information. If the output circuit only contains a single number of output paths, all output information can be obtained sequentially by serial shift. If the output circuit includes a plurality of output paths, the comparison result may be sequentially obtained from the plurality of output paths in parallel by using multiple probes, or the comparison result may be sequentially obtained from the plurality of output paths by using a single number or a plurality of sets of probes in turn.
  • the output information outputted by the output circuit may be a determination result of whether each of the measured units fails, or may be a comparison result output by the comparison device corresponding to the output end of the measured unit.
  • the input channel and the output circuit for testing the unit under test on the wafer in parallel can be established at the same time by serially inputting configuration information, or can be established step by step by inputting configuration information multiple times.
  • the input channel can transmit input excitation and expected results from the unit under test where the probe is located to all of the units under test.
  • the output circuit can output test information of all the tested units or the output of the measured unit to the unit under test where the probe is located.
  • the design of the input channel and the output circuit of the present invention is higher than the design reliability of the unit under test, and has a self-detection function, which can be pre-tested once after the establishment is completed to ensure the input channel and the output circuit. The correctness of itself.
  • the probe can be moved to re-establish the input channel and output circuit from the other unit under test, and the self-test is repeated.
  • the test excitation for self-test can be transmitted to each unit under test through the input channel, and then the test excitation of the self-test is serially derived through the output circuit, thereby realizing the input channel and the output circuit. test.
  • the input channel for testing the unit under test on the wafer in parallel may be located on the wafer including the unit under test, and the specific location on the wafer includes but is not limited to the unit under test
  • the inside and the part are outside the unit to be tested on the wafer and all outside the unit to be tested on the wafer.
  • the wires used to form the input channel or output circuit can be placed in the scribe line or placed within or through the die.
  • the means and wires placed in the scribe line are automatically cut off during die cutting without affecting the function of the die itself.
  • the test pads placed in the corner pads and vacant pads also do not affect the function of the die itself.
  • the alignment marks can be moved to the corner pad locations of the die.
  • the auxiliary test device can be placed within the die, or placed in a scribe line or placed on another wafer and coexisted with a test structure for wafer acceptance testing.
  • the method of coexistence may be to bypass the wafer for acceptance testing (WAT) Test structure or share WAT test structures in certain locations, such as borrowing test pads from the WAT test structure for stimulus input.
  • WAT wafer for acceptance testing
  • capacitors can be fabricated in the scribe line to mimic the load to be driven by the measured die output, making the test more realistic.
  • Part or all of the layout of the auxiliary test device on the wafer of the present invention may be automatically laid out by computer software ( Place and route tool ) is automatically generated based on a few basic cells.
  • One solution is to perform multiple tests on a shared base integrated circuit.
  • the multiple test can first test the complete long test program of a large number of tested units at a low speed, complete the functional test, and then partition the high-speed test of the critical path short test program of a small number of tested units to test the speed of the tested unit.
  • Another solution is to use the integrated circuit test system described below.
  • the invention provides an integrated circuit parallel test system, including a wafer to be tested and a probe card (probe card) And a test machine; wherein the test wafer may include all or part of an auxiliary test device fabricated by a semiconductor process; the probe card may be composed of another substrate including some or all of the auxiliary test devices;
  • the machine has multiple power supplies ( Power supply ) and corresponding current limiter ), it can shunt all the units under test on the wafer while providing sufficient current to ensure that the unit under test can work at a given operating frequency and can cut off the corresponding power supply when any of the units under test are short-circuited.
  • the system of the present invention is capable of performing self-tests to eliminate errors in the auxiliary test device itself, including the ability to establish input paths and output circuits on the wafer, and to maintain or reconstruct inputs based on test results of the input and output circuits. Path and output circuit.
  • the auxiliary testing device of the system of the present invention comprises:
  • the output circuit is connected to a plurality of register circuits, and outputs a comparison result of the corresponding comparison device and position information of the corresponding measured unit.
  • the electrical connection between the auxiliary test device located outside the die on the wafer to be tested and the die to be tested can be completely cut off when the wafer is cut.
  • the unit under test can obtain power wirelessly by means of electromagnetic waves.
  • the power supply circuit in the system of the present invention can also be connected to the power input terminals of a plurality of units to be tested.
  • wired power supply circuit may be composed of hardwired wires, or may be composed of configurable switch lines, or a combination of hardwired and configurable switch lines.
  • the input path in the auxiliary test device in the system of the present invention can be electrically connected by a wired interconnection circuit connected to a signal input end of the unit under test, or directly transmitted by electromagnetic waves, or electrically connected by a wired interconnection circuit and directly transmitted by electromagnetic waves.
  • the data signal and the control signal are input to a plurality of units to be tested on the wafer.
  • the wired connection between the input path of the auxiliary test device and the unit under test and the comparison device in the system of the present invention may be composed of hardwired or configurable switch lines, or hardwired and configurable switch lines. Combined composition.
  • the input path in the auxiliary test device in the system of the present invention may further comprise a conversion device connected to the device under test for converting the input signal and then inputting to the input terminal.
  • the comparing device in the auxiliary testing device in the system of the present invention is configured to sample the signal of the output end of each of the plurality of tested units and compare them with the corresponding expected result input from the input path, or to a plurality of The signals of the output of each of the units under test and the corresponding outputs of the other unit under test are sampled and compared with each other.
  • the comparison means in the auxiliary test apparatus of the system of the present invention may include conversion means coupled to the unit under test for converting the signal on the output prior to comparison.
  • the comparing means in the auxiliary testing device of the system of the present invention may further comprise a result merging compression means for temporally and spatially merging compression of the comparison result.
  • the port of the unit under test is used as an input and test /
  • the output is bidirectionally multiplexed, and the corresponding input path connected to the port is configured to be high impedance when the port is used as an output.
  • the output circuit in the auxiliary test device of the system of the present invention may be constructed of hardwired, or constructed of configurable switch lines, or a combination of hardwired and configurable switchwires.
  • Another substrate constituting the probe card in the system of the present invention includes, but is not limited to, a wafer or a printed circuit board; the other substrate can simultaneously supply all or part of the power of all or part of the unit under test on the tested wafer and
  • the signal input port provides power and test excitation.
  • the probe card and the tested wafer pass the bump (bulb)
  • the connection may be located on the probe card, or on the wafer to be tested, or on the probe card and the wafer to be tested.
  • the other end of the other substrate is connected to the test machine.
  • a solder ball on a wafer can be used as a probe, and other wafers or other circuit boards can be pressed onto the wafer to be tested, and some or all of the tested units on the tested wafer can be tested in parallel.
  • the comparators for testing may be located on the wafer under test or on other wafers or other boards.
  • the other wafers include, but are not limited to, the same process as the wafer to be tested and a process behind the wafer to be tested.
  • the other wafers or other boards include, but are not limited to, wafers or boards of the same size as the wafer being tested, or wafers or boards larger than the wafer being tested.
  • the other wafer or other circuit board is structurally including, but not limited to, through a through silicon via ( TSV, through silicon via) wafer or circuit board with through holes and metal wires, and wafers with integrated circuit blocks on both sides.
  • a printed circuit board with a metal wire as a probe card
  • a solder ball as a probe to transmit power and test excitation through the metal wire through the solder ball to all or part of the unit under test. Or part of the input port.
  • the probe card is electrically connected to the tested wafer, and the test excitation and/or power supply can be transmitted to the plurality of units under test by electromagnetic wave.
  • test machine features in the system of the present invention include:
  • the configuration information corresponding to the connection relationship between the device under test and the auxiliary test device on the wafer can be generated or stored, and the corresponding configuration information can be adjusted according to the coordinates of the die where the current probe is located, and the configuration information is transmitted to the wafer. ;
  • test machine features in the system of the present invention may include the ability to generate or store data signals and control signals for testing the unit under test on the corresponding wafer, i.e., test excitation, and to transmit the test stimulus to the wafer.
  • test machine features in the system of the present invention can include the ability to generate or store an expected result of a corresponding test stimulus and to transmit the expected result to the wafer.
  • the test machine feature in the system of the present invention may include the ability to classify the unit under test according to whether the comparison result satisfies the test requirement, and record and output the position information of the unit under test on the wafer or on the wafer and in the die. .
  • the present invention provides an integrated circuit chip including a plurality of functional modules to be tested, wherein the plurality of functional modules having the same function are the tested units to be tested; wherein the integrated circuit chip further includes an auxiliary testing device.
  • the auxiliary test device only when the integrated circuit chip is in test mode ( Test mode).
  • Test mode includes, but is not limited to, a plurality of units to be tested running the same input excitation in parallel; the auxiliary test device may be partially located inside the unit to be tested, or may be wholly or partially located outside the unit to be tested, including:
  • one input terminal is connected to the output of the device to be tested to be tested, the other input terminal is connected to the corresponding output terminal of the other device under test, or is connected to a corresponding input circuit for inputting the expected result;
  • the output circuit is connected to the output ends of the plurality of comparison devices, and outputs the comparison result of the corresponding comparison device and the position information of the corresponding measured unit.
  • the input circuit can electrically input the data signal and the control signal to the unit under test in the integrated circuit chip through a wired interconnection circuit connected to the signal input end of the unit under test.
  • the input circuit in the integrated circuit chip of the present invention may further comprise a conversion device connected to the device under test for converting the input signal and then inputting to the input terminal.
  • connection of the input circuit to the unit under test and the comparison device in the integrated circuit chip of the present invention may be composed of a hard-wired line, or a configurable switch line, or a combination of hard-wired and configurable switch lines.
  • test excitation source for generating the data signal and the control signal in the integrated circuit chip of the present invention may be external to the integrated circuit chip, or may be inside the integrated circuit chip, and may also be generated by externally generating test excitation and stored in the Within the integrated circuit chip.
  • the comparison device in the integrated circuit chip of the present invention may further comprise conversion means connected to the unit under test for converting the signal on the output before comparison.
  • the comparing means in the integrated circuit chip of the present invention may further comprise a result merging compression means for temporally and spatially merging compression of the comparison result.
  • the output circuit of the integrated circuit chip of the present invention may be composed of hard-wired or configurable switch lines, or a combination of hard-wired and configurable switch lines.
  • the integrated circuit chip of the present invention can output the position of the unit under test in the substrate and the result of the corresponding comparison device through the output circuit, and can also save the test result in the memory inside the integrated circuit chip.
  • the integrated circuit chip of the present invention can mark the failed function module to be tested according to the test result stored in the memory, and include the integrated circuit if the effective function module having the same function as the failed function module is redundant. Chip soft / The hardware system can replace the failed function module with a redundant effective function module to achieve self-repair.
  • the invention provides a circuit board comprising a plurality of tested units with the same function, wherein the unit to be tested is a packaged integrated circuit chip to be tested ( a packaged chip; wherein the circuit board has a plurality of chip sockets for connecting to the unit under test; and the circuit board has an interface for connecting to the test machine ( Interface ); the circuit board also has an auxiliary test device, including:
  • the circuit board of the present invention may further include at least one buffer chip. Connected to the device under test and the test machine interface through an electrical connection.
  • the circuit board of the present invention wherein the test excitation of the unit under test can be transmitted from the test machine directly to the plurality of units under test via an electrical connection on the circuit board, or buffered from the test machine via the buffer chip. Then, it is transmitted to a plurality of measured units through an electrical connection, or transmitted from the test machine to the plurality of measured units in the form of electromagnetic waves via an electromagnetic wave generator.
  • Each of the comparison chips in the circuit board of the present invention has a complex array dedicated input port, and all of the dedicated input ports of all the comparison chips are respectively connected to the output of the plurality of slots through electrical connection one by one. a port and an input/output multiplexing port; the comparison chip is capable of receiving an output signal of the test unit after the test unit is excited by an electrical connection, and receiving each output signal of each measured unit and the other measured unit The corresponding output signals are compared in parallel to generate a comparison result.
  • Each of the comparison chips in the circuit board of the present invention has a complex array dedicated input port, and all of the dedicated input ports of all the comparison chips are respectively connected to the output of the plurality of slots through electrical connection one by one. a port and an input/output multiplexing port; the comparison chip further has an electrical connection with the test machine interface for receiving an expected result; and the comparison chip is capable of receiving an output signal of the test unit after the test unit is excited by the electrical connection And comparing each received output signal of each measured unit with the corresponding expected result to generate a comparison result.
  • the comparison chip in the circuit board of the present invention may further comprise a result merging compression device for performing temporal and spatial merging compression on the comparison result to generate a test result.
  • test result of the comparison chip to the unit under test is transmitted back to the test machine through an electrical connection.
  • the circuit board of the present invention may further include only one type of chip; the chip includes functions of a comparison chip and a buffer chip.
  • the complete function of the circuit board in the circuit board of the present invention may be implemented by a plurality of electrically connected circuit boards; one of the plurality of circuit boards may implement a part of the complete function or the complete function.
  • the technical solution of the present invention can stimulate the same test through the input channel and / Or the expected results are transmitted to all of the units under test in the selected area on the substrate at a time, while existing methods, devices, and systems can only test the stimulus and / Or the expected result is transmitted to one unit under test at a time. Even if the multi-probe test machine is used, it is essentially tested in turn, and it is impossible to test all the units tested in parallel;
  • the comparison in the technical solution of the present invention may be a parallel comparison between the output signals of all the tested units and the expected results, and the existing methods, devices, and systems respectively perform the respective signals of the output of the measured unit and the expected results.
  • the comparison in the technical solution of the present invention may also be a parallel comparison between the signals of the output units of the tested units that are not known to be effective, and the existing methods, devices, and systems all have the output signals of the measured units and Knowing the reference value comparison, the known reference value includes the value stored in the test instrument or the result of the operation of the known effective unit.
  • the invention adopts a method for parallel testing of a plurality of integrated circuits under test, and can test a single or a plurality of integrated circuits to be tested in one operation, and test N with respect to a single test integrated circuit and test one by one.
  • the die requires N*(M+L) test time.
  • the test method of the present invention only needs M+L+N*R test time (where M is the time of moving the card or moving the package after the package is tested, L To perform the test stimulus time, R is the time to output the test feature, R is much smaller than M+L Therefore, the present invention can reduce the test time of the integrated circuit by an order of magnitude, reduce the test cost, and shorten the mass production time of the product formation; the invention can appropriately increase the length of the test excitation and improve the test coverage because the input excitation operation time is greatly reduced. Rate, effectively reducing the leak rate.
  • the invention has no additional requirements on the number of test bench channels , to help reduce the cost of testing; for wafer testing, when the comparison device is integrated on the wafer, the delay of transmission of high-frequency signals through the cable can be avoided, so that higher frequency testing can be performed, or low-end testing can be used.
  • the station conducts high-end testing.
  • Figure 1 is a schematic diagram of a general wafer test (prior art).
  • FIG. 2 is a flow chart of testing the shared base integrated circuit test apparatus of the present invention with expected results.
  • 3 is a flow chart of testing of the shared base integrated circuit test apparatus of the present invention without expected results.
  • Figure 4 is a schematic diagram of the structure of the grain output compared to the expected results.
  • Figure 5 is a schematic diagram showing the structure in which the crystal outputs are compared with each other.
  • Figure 6 is a schematic diagram of the comparator within and outside the die.
  • Figure 7 is a schematic diagram of the determination of die failure during the test.
  • Fig. 8 is an embodiment of the positional relationship of adjacent units to be tested in the present invention.
  • Figure 9 is a schematic diagram of the comparison of the operation results to analog signals.
  • Figure 10 is an embodiment of the present invention for a power supply mode.
  • Figure 11 is a diagram showing possible positional distributions of an embodiment of the present invention for alignment mark locations on a wafer.
  • Figure 12 is a diagram showing the structure of the input channel and the structure of the output circuit in the lithography area on the wafer.
  • Figure 13 is an embodiment of the present invention for a circuit connection configuration when the dies are compared with each other.
  • Figure 14 is an embodiment of the present invention for a configuration method.
  • Figure 15 is a schematic diagram of a wafer test input path and test feature export path.
  • Figure 16 is a schematic diagram of a wafer with a large power interface.
  • Figure 17 is a schematic diagram of wafer testing of RF dies.
  • Figure 18 is a schematic diagram of a self-test wafer.
  • Figure 19 is a diagram of a new wafer test system.
  • Figure 20 is a diagram showing the internal test structure of a multi-operation unit/multi-core integrated circuit chip.
  • Figure 21 is a schematic diagram of the wiring pattern of the die output to the comparator.
  • Figure 22 is a four embodiment of wafer testing on a wafer under test using other wafers.
  • Figure 23 is an example of DC testing of the measured die.
  • Figure 24 is a complementary metal oxide semiconductor (complementary Metal-oxide-semiconductor, CMOS) Example of image sensor testing.
  • CMOS complementary Metal-oxide-semiconductor
  • Figure 25 It is an embodiment of a wafer test machine that provides sufficient power for a specified number of units under test at rated voltage.
  • Figure 26 is a diagram showing a test result table for storing test results when testing functional modules in an integrated circuit chip using the present invention.
  • Figure 27 is a test circuit diagram compared to the expected results.
  • Figure 28 is a cross-sectional view of a wafer test using a circuit board.
  • Figure 29 is an embodiment of a packaged integrated circuit test device.
  • Figures 30A-B and 31A-B are four embodiments of the present invention.
  • the technical idea of the present invention is a plurality of integrated circuits under test/die with the same structure and function /
  • the functional chips perform the same input excitation, each generating a running result, and the running results are compared with each other in parallel or in parallel with the expected result to detect the failed integrated circuit/die/function chip.
  • FIG. 2 It is a flow chart of testing the shared base integrated circuit test device of the present invention with expected results.
  • the comparison device in this embodiment does not include a failure determination function.
  • step one (202 )
  • step 2 (203)
  • step three (205)
  • the sampling results of each unit under test are sampled and compared with the expected results, and the comparison result is recorded.
  • the number of comparisons of the samples depends on the requirements of the test accuracy.
  • step four ( 206), as a result of the determination, the position information of the unit under test and the corresponding determination result are generated.
  • step 5 (207) to output the position information of the unit under test and the corresponding determination result.
  • the comparison device in this embodiment includes a failure determination function. First go to step one (302 ), input the excitation, and then go to step 2 (303) to run each unit under test in parallel. Then go to step three (304 The sampling results of each unit under test are sampled, and the sampling results of the running results between the units to be tested are compared, and the comparison features are recorded. The number of times this sample is compared depends on the accuracy of the test. After the sampling comparison of the running results of all test incentives is completed, proceed to step four ( 306), generating a determination result of the unit under test.
  • step five outputting the position information of the unit under test and the corresponding determination result.
  • the test feature is a suspected failure unit or a failure unit determination result.
  • the result of the determination may be failure unit coordinate information or other information that can locate the failed unit.
  • the suspected failed unit can be retested as needed, or the suspected failed unit can be simply considered to be truly invalid according to the requirements.
  • a failed unit can be physically marked.
  • FIG 4 is a schematic diagram of the structure of the grain output compared to the expected results.
  • Bidirectional switch ( 403 ), bidirectional switch ( 404 ), the bidirectional switch ( 443 ), the bidirectional switch ( 444 ) is configured to transmit to the right, and the wired interconnect circuit ( 402 ) passes the left incoming excitation ( 401 ) through the input pad ( 406 )
  • the input pad (407) and the input pad (408) are respectively introduced into the die (409), the die (410), and the die (411).
  • the lower running results are respectively transmitted to the comparator (414) and the comparator (415) through the respective output pads (425), output pads (426), and output pads (427). ), comparator (416).
  • the comparison/decision results of the comparator (414), the comparator (415), and the comparator (416) are stored in the feature register (417) and the feature register, respectively. 418), in the feature register (419).
  • the initial value of all feature registers is set by the external control signal or by self-excitation.
  • Feature register (417 ), the feature register ( 418 ), the feature register ( 419 ) and other feature registers can be connected into a shift register chain ( 420 ) for outputting the position information of the measured die and corresponding comparison / judgement result.
  • the excitation ( 401 ) can be directly connected to the internal module by the input pad ( 406 ), the input pad ( 407 ), and the input pad ( 408 ), comparing / The determination result may be directly outputted by a metal wire without using the output pad (425), the output pad (426), and the output pad (427).
  • the comparator can have a single or multiple inputs.
  • FIG. 5 is a schematic diagram showing the structure in which the crystal outputs are compared with each other.
  • Bidirectional switch ( 503 ), bidirectional switch ( 504 Configuring to transmit to the right, the wired interconnect circuit (502) passes the left incoming stimulus (501) through the input pad (505), the input pad (506), and the input pad (507).
  • the result of the underside of the die (509) is transferred to the comparator via the output pad (512) (514)
  • the comparator (515), the result of the operation under the die (508) is passed through the output pad (511) to the comparator (514) for comparison with the output of the die (509).
  • Grain (510 The lower run result is compared to the output of the die (509) via the output pad (513) to the comparator (515). Comparison of comparator ( 514 ), comparator ( 515 ) / The determination results are stored in the feature register (516) and the feature register (517), respectively. The initial value of all feature registers is set by the external control signal or by self-excitation. When the comparator input is not equal / When there is no match, the internal value of the feature register changes and only changes once, that is, if the output of the adjacent die is not equal/mismatched once, the relevant die is marked as a suspected failed die.
  • Feature register 516
  • the feature register (517) and other feature registers may be coupled into a shift register chain (518) for outputting position information of the measured die and corresponding comparison/decision result test feature values.
  • Incentive 501
  • the input pad ( 505 ), input pad ( 506 ), and input pad ( 507 ) can be directly connected to the internal module by metal wires.
  • the comparison / determination result can also pass through the output pad ( 511 ) ), the output pad (512), and the output pad (513) are directly outputted by metal wires.
  • the comparator can have a single or multiple inputs.
  • Figure 6 (a) is a schematic diagram of the comparator as it is inside the die.
  • Transmission network (601
  • the expected result or the running result of the adjacent die is input into the current die through the pad (603) of the input/output port (I/O pin) (602), and the corresponding operation result of the current die (604) )
  • the output driver (606) in the input/output port (602) is set to high impedance, and the input driver (608) is turned on.
  • Figure 6 (b) is a schematic diagram of the comparator when it is outside the die.
  • the current die operation result (611) is passed through the output driver ( 612) comparing the output of the pad (613) to the comparator (614) with the expected result from the pad (616) or the running result of the adjacent die (615).
  • Figure 7 It is a schematic diagram for determining the failure of the die during the test.
  • the operation results on the four sides of each measured die are compared with the running results on the corresponding sides of the adjacent measured die by a comparison device, wherein the comparison result is equal /
  • the matching comparison device icon is white and the comparison result is not equal /
  • the mismatched comparison device icon is black.
  • all means for determining whether the die has failed may be on the wafer or on an off-wafer test machine.
  • Figure 7 (a ) is a schematic diagram of the test case when there is no failure crystal, wherein the operation results of the measured crystal grains ( 701 ) on the four sides pass through the connection line ( 707 ) and the measured crystal grain ( 702 ), and the measured crystal grain ( 703 ) ), the measured die (704), the measured result of the corresponding side of the measured die (705) are compared, and the comparator (706) is shown in white to indicate the measured die (701) and the measured die (704)
  • the comparison of the corresponding sides is equal/matched, and the comparisons on the four sides of the figure are completely equal/matched, so that the measured grain (701) can be determined to be a normal grain.
  • Figure 7 (b) is a schematic diagram of the test situation when the measured die partially fails, the measured die (711 ) on the four sides, respectively, compared with the operation results of the measured die ( 712 ), the measured die ( 713 ), the measured die ( 714 ), and the measured die ( 715 ), where the comparator ( 716 And the comparator (717) is shown in black, which means that the measured die (711) is not equal/mismatched with the measured die (712) and the measured die (714), and the connection (718) ), connect (719) to its corresponding connection.
  • the measured grain (711) is equal to the measured grain (713) and the measured grain (715) on the corresponding side. Matching, so it can be determined that the measured die (711) is partially failed.
  • Figure 7 (c) is a schematic diagram of the test case when the measured die is completely failed, the measured die (721) and the measured die ( 722), the measured die (723), the measured die (724), the measured die (725) on the four sides of the corresponding operation results are all unequal / mismatch, as shown in the comparator ( 726), comparator (727), comparator (728), comparator (729), comparator (730), comparator (731), comparator (732), comparator ( 733) is all black, and the connection (734) is the connection between the unit under test (721) and the comparator (726). Therefore, the measured crystal grain can be determined (721 ) is a failure grain.
  • the comparison result of each port can be compared by the logic circuit, and only one comparison result is output, and the comparison result is spatially compressed; the comparison result can be accumulated by the accumulation circuit to realize the compression of the comparison result in time. After compression, the bandwidth requirements of the output circuit can be reduced and the test process can be accelerated.
  • FIG. 8 is an embodiment of the positional relationship of adjacent units to be tested in the present invention.
  • Figure 8 (a) is a schematic diagram of the normal placement position, the unit under test ( 801 ), the unit under test ( 802 ), the unit under test ( 803 ), and the unit under test ( 804)
  • each output port of the unit under test is compared with an output port on the corresponding side of the adjacent unit under test by a connection, such as an output port of the unit under test (801) and a unit under test (802).
  • Corresponding output ports are compared.
  • the connection line (813) in the figure is a connection between the corresponding output port of the unit under test (802) and the unit under test (804).
  • Figure 8 ( b
  • the placement position of each unit to be tested is in a rotating relationship with the placement position of the adjacent unit to be tested, such as the placement position of the unit under test (806) and the unit under test (805) and the unit under test.
  • the placement position of 808 is 180 degree rotation
  • the position of the unit under test (808) is 180 degrees with the position of the unit under test (806) and the unit under test (807). Degree rotation relationship.
  • the connection (814) is the unit under test (806)
  • Figure 8 (c As a schematic diagram of the position of the mirror, the position of each unit to be tested is mirrored with the position of the adjacent unit to be tested, such as the position of the unit under test (809) and the unit under test (810) and the unit under test.
  • the placement position of 811) is mirror image, and the position of the unit under test (811) is respectively placed with the unit under test (809) and the unit under test (812).
  • the placement position is mirrored.
  • the output port of the unit under test is closer to the corresponding output port position of the adjacent unit under test, and it is more convenient to connect the lines.
  • the connection (815) is the unit under test (810)
  • This embodiment is more suitable for testing non-directional chips such as RFID.
  • Figure 9 is a schematic diagram of the comparison of the operation results to analog signals.
  • Grain (901 The result of the operation is an analog signal, the analog signal converter (902) is used to convert the sampling of the signal, and the converted result is sent to the digital comparator (903) to generate whether the two crystal grains are equal / Match the comparison/judgment result and store the comparison/decision result in the feature register (904).
  • Grain (901 The input can be a direct analog signal input, or a digital signal can be input after digital analog conversion.
  • FIG 10 is an embodiment of the present invention for a power supply mode.
  • Power pad for all die (1001) in the wafer (1002) ) All can be connected to the global power network (1003), or the partition power supplies are connected together to form multiple local power networks.
  • the ground pad (1004) can also be fully connected to the ground grid (1005) Or a partition connection to form multiple local ground networks.
  • the ground pads in the global or partition can all be connected together, and each power pad is connected to a global or partitioned power network via a large PMOS device.
  • the gate of the PMOS device is connected to a configurable network that controls the on and off of each die supply.
  • the pads are constructed of metal, placed on the outside of the die or on the die, and may be joined to the structure of the present invention by metal wires.
  • Figure 11 (a) is an embodiment of the present invention for alignment mark positions. 60 microns -80 between each die on the wafer
  • the micron dicing track (1101), the alignment mark (1102) is used for the alignment of each reticle, typically within the scribe line (1101), and occupies all of the layout layers. Since the present invention requires a cutting path ( 1101) The long connection is designed.
  • the alignment mark can be moved to the corner pad (1104) of the die.
  • Input channel, comparison device and output circuit can be used with WAT for wafer acceptance testing
  • the test structures coexist.
  • the coexistence method can be to bypass the WAT test structure or share the WAT test structure at certain locations, such as borrowing a needle pad from the WAT test structure for the input of the stimulus.
  • Figure 11 ( b ) is a possible location map of the needle pad on the wafer.
  • a test pad for the test network for incoming clocks, configuration information, and the like.
  • a position (1112), B position (1113); can also be placed on the die (1111)
  • the corner pad such as the C position (1114).
  • the needle test pad in the cutting path (1101), such as the D position (1117), E position (1118).
  • Figure 11 (c ) is a possible location map of the pad when using flip chip or wafer level chip packages.
  • the probe card can use a vacant pad on the die (1212) (1122) ) to use as a needle pad.
  • FIG. 12 is a structural diagram of an input channel and an output circuit structure of a lithography area on a wafer.
  • Figure 12 ( a) is the input channel structure diagram inside the lithography area on the wafer
  • Figure 12 (b) is the structure diagram of the measured crystal output circuit in the lithography area on the wafer.
  • the test stimulus is passed through the pin test card (1201) and through the wire on the scribe line on the wafer (such as a wire ( 1202)) respectively transferred to the measured die in the lithography area (1206) (such as the measured die (1203) )), where the connection on the scribe line has been determined at the layout stage and cannot be changed throughout the test phase.
  • the wire on the scribe line on the wafer such as a wire ( 1202)
  • the measured die in the lithography area (1206) such as the measured die (1203)
  • FIG. 13 is an embodiment of the present invention for a circuit connection configuration when the crystal grains are compared with each other
  • FIG. 13 (a) It is a top view of this embodiment
  • Figure 13 (b) shows the connection details among the three crystal grains.
  • the probe of the pin test card ( 1316 ) falls on a die ( 1311
  • the incoming input stimulus can be transmitted to the corresponding input pads of the die (1310), die (1312) through the wired interconnect circuit (1302).
  • Wired interconnection circuit (1302 ) consists of a number of basic transmission units ( 1303 ).
  • Basic transmission unit (1303) through bidirectional switch (1304) The guaranteed signal can be transmitted from the left (right) to the right (left), or from the upper (lower) to the lower (top), and the bidirectional switch is configured by the configuration network, so that the pin test card (1316)
  • the input excitation at any of the dies can be transmitted to all dies.
  • the bidirectional switch (1304) is unidirectional, and when the output is compared, the bidirectional switch (1304) is turned off.
  • Bidirectional switch 1304) When it is a single-conduction, its conduction direction can be determined by the configuration memory (1308), or it can be controlled by the unit under test/output control pad (1309) and configuration memory (1308). )decided together.
  • the driver (1305) of the basic transmission unit (1303) does not cause attenuation of signal transmission. If the attenuation is not large, the wired interconnect circuit can also have no driver ( 1305). If necessary, a latch can be added to the wired interconnect circuit to transmit the signal in a pipelined manner.
  • the bidirectional switch (1304) is configured to be disconnected, the pad (1301) The output of the die is transmitted as an output pad, at which point the comparator (1306) operates.
  • the pad (1301) is input / The output pad, the separate input pad or the output pad connection method is a subset of this embodiment.
  • Figure 14 It is an embodiment of the present invention directed to a configuration method.
  • the wired interconnect circuit and the output circuit have different topologies.
  • the input excitation requires transmission from the probe drop point to the four sides in the shortest path, and the output circuit is serially passed through each unit to be tested. At each node, the wired interconnect circuit and the output circuit do not necessarily have the same direction of transmission.
  • the purpose of this embodiment is to establish a comparison of all the units to be tested simultaneously by serial configuration. /
  • the determination result is serially outputted to the unit under test where the probe is located, and the wired interconnection circuit that configures the input excitation from the unit under test to which the probe is located.
  • the method adopted is to establish a chain passing through each unit to be tested from the position of the probe in a point-by-point configuration by point-by-point transmission.
  • the reverse of this chain is a true comparison.
  • Judging the direction of the result transmission, while establishing this chain the transmission direction of the wired interconnection circuit is also configured.
  • the configuration information of each node transmitted through the chain includes: wired interconnect circuit structure configuration information and output circuit structure configuration information.
  • the specific approach is to take the probe position ( 1401)
  • the configuration information and clock (1427) are serially transmitted to all nodes through the network (1402), as shown in Figure 14 (a).
  • nodes For nodes ( 1408 For example, the clock signal and node configuration information (1427) are transmitted from above, and the configuration memory of the transmission direction of the excitation signal on the node (1408) is configured (1308). And a derivation direction configuration register (1407) that controls the output direction of the output circuit.
  • the Export Direction Configuration Register ( 1407 ) indicates a comparison to the right / The decision result output circuit (including forward clock transfer, forward configuration information transfer, and reverse comparison / decision result transfer channel).
  • the configuration memory ( 1308 ) indicates that the input stimulus is passed down ( 1414 ) ).
  • the clock signal and node configuration information arrives at the node (1403) from the left node (1408), and the node is configured (1403).
  • the configuration memory (1308) of the transmission direction of the excitation signal and the control comparison/decision result derivation direction configuration register (1407) The configuration memory (1308) of the transmission direction of the excitation signal and the control comparison/decision result derivation direction configuration register (1407).
  • Export Direction Configuration Register ( 1407 ) Instructs to continue to build a comparison/decision result output circuit to the right (including forward clock transfer, forward configuration information transfer, and reverse comparison / decision result transfer channel).
  • Configuring memory ( 1308 ) indicates that the input stimulus is passed down (1404).
  • the clock signal and node configuration information arrives at the node (1406) from the left node (1403), and the node is configured ( 1406)
  • the configuration memory (1308) of the transmission direction of the excitation signal and the control comparison/decision result derivation direction configuration register (1407) The configuration memory (1308) of the transmission direction of the excitation signal and the control comparison/decision result derivation direction configuration register (1407).
  • Export Direction Configuration Register ( 1407 ) Instructs to continue to build a comparison/decision result output circuit to the right (including forward clock transfer, forward configuration information transfer, and reverse comparison / decision result transfer channel).
  • Configuring memory ( 1308 ) indicates that the input stimulus is passed down (1488). After each node is configured, configure memory (1308) and export direction configuration register (1407) ) does not change due to subsequent configuration information passing through the node. However, when the power is turned off and the reset signal is externally supplied, all are set to the initial values.
  • node configuration information and clock transmission path ( 1427 ) So through the node configuration information and clock transmission path ( 1427 ), node configuration information and clock transmission path ( 1415 ), node configuration information and clock transmission path ( 1405 ), node configuration information, and clock transmission path ( 1420 ) ) Pass all node configuration information and clocks in turn, and transfer them to the required link nodes as needed.
  • By comparing/determining the result transmission path (1429), comparing/determining the result transmission path (1430), comparing / The decision result transmission path (1431) establishes a reverse comparison/decision result output circuit, and outputs all the comparison features, and the transmission direction configuration of the input excitation is also completed while the output circuit is established.
  • Figure 14 (b) is a connection diagram of a node (1408), a node (1403), and a node (1406).
  • Figure 15 (a) is a schematic diagram of a wafer test input channel, which is a top view; pin test card (1501) The excitation is transmitted to each die (1504) through the input channel (1503) on the wafer to be tested (1502), where the input channel (1503) ) can be configured to select the excitation transmission path.
  • the needle card (1501 The test excitation can be transmitted without moving, saving test time; it can also be configured to select partial region transmission stimulus for sub-regional testing.
  • Figure 15 (b) is a schematic diagram of a wafer comparison/decision result output circuit, which is also a top view; the wafer to be tested ( 1502) There is a comparison/decision result output circuit (1505) that connects all the die to be tested (1504) Characteristic register; all the characteristic registers form a shift register, and the comparison/decision result can be read by serial shifting of the shift register, and all comparisons can be read without moving the pin test card (1501). / judgement result. It is also possible to configure only the comparison/judgment results of partial areas. Comparison / decision result output circuit (1505 The pre-test can be done once after the establishment is completed to ensure the correctness of the input channel and the comparison/decision output circuit itself.
  • the input can be passed from the pin test card (1501) to the node (1506). ), after passing through the comparison/decision result output circuit, it is read from the node (1507) through the pin test card (1501), and the two are compared with each other, equal / A match means that the pretest is passed, otherwise, the pretest is not passed. If the pretest is not passed, you can move the card (1501) to re-establish the input channel and compare from another unit under test / The result output circuit is determined and the self-test is repeated. In the self-test mode, the self-test excitation is transmitted to each unit under test through the input channel, and then by comparison / The determination result output circuit serially derives the excitation for self-test described above.
  • Figure 15 (a) and Figure 15 (b) use the input channels and comparisons established in Figure 14 / The result output circuit is determined.
  • Figure 16 is a schematic diagram of a wafer with a large power interface; in addition to having a common die on a wafer (1601) ( 1602), there are also several large power interfaces (1603), which are available (1603) ) A hard-wired connection to the power supply of the surrounding die. Since it can pass through a large power source, it can simultaneously supply multiple dies in one area and allow the dies to be tested at higher frequencies. This requires a dedicated probe that can be used with a large power supply.
  • Figure 17 is a schematic diagram of wafer testing of RF dies.
  • the pin test card (1703) An antenna input pad for each die (eg, die (1702)) on the wafer (1701) has a corresponding receive antenna or coupler (eg, receive antenna and coupler (1704) )), by means of electromagnetic wave transmission through the antenna to the corresponding measured RF die (such as the measured RF die (1702)) input test excitation and power supply, each measured RF die (such as the measured RF die (1702) )) Run the test stimulus and transfer the results to the corresponding comparator through the connection on the wafer (1701) through each measured die (eg, the measured RF die (1702) ) Comparison of the results of the operation or comparison with the expected results to obtain a comparison / determination result, comparison / determination results through the needle test card (1703) The output probe on the ) is transmitted to the signature device to enable wafer testing of the RF die. Test excitation and power supply can be transmitted
  • Figure 18 is a schematic diagram of the self-test wafer.
  • the test excitation generator (1801) is integrated on the wafer (1803).
  • the test excitation generated by the connection is transmitted to each measured die (such as the measured die (1802)) through the connection, and the output port of each measured die (such as the measured die (1802)) also passes.
  • a complete test environment has been formed on the entire wafer (1803), and in the case of power-on, the entire wafer (1803) All wafers can be tested independently without the involvement of an external test machine, and the comparison/decision results are output to the signature device via the output probe on the card.
  • the test excitation generating device ( 1801 ) can also be integrated into the scribe line ( 1804 ) on the wafer ( 1803 ) without occupying the die position.
  • Figure 19 is a diagram of a new wafer test system; the structure includes a tester (1901), a dedicated test device ( 1902), the two are connected by a cable (1903) to test the wafer under test (1905) on the wafer testing machine (1904).
  • This special test device ( 1902 A large power supply can be provided.
  • the probe (1906) on the dedicated test device (1902) can be in contact with the power/ground of all the dies on the tested wafer (1905) to realize the wafer to be tested (1905). Power is supplied to the full wafer or part of the wafer area.
  • the excitation generated by the tester (1901) can be transmitted to the plurality of units to be tested in parallel through a dedicated test device (1902) to drive the wafer to be tested (1905) ) All or part of the measured die, each die simultaneously runs the input excitation at high speed; the comparison / determination result will be exported to the tester ( 1901 ) through the dedicated test device ( 1902 ) and the cable ( 1903 ) In the test, if the test result is a comparison result, the tester (1901) The suspected failed unit will be determined based on the comparison result of the output. The system can also test the suspected failure unit separately according to the operation result, and has the function of marking the failure unit.
  • Figure 20 is a diagram showing the internal test structure of a multi-operation unit/multi-core integrated circuit chip, as shown in the figure, in the multi-operation unit / Inside the multi-core integrated circuit chip (2011), the test excitation generator (2001) generates test excitations and transmits them to each unit under test (such as the unit under test (2002), the unit under test (2004). ), the unit under test (2007), the unit under test (2009), where the unit under test is an arithmetic unit or processor core inside the multi-operation unit/multi-core integrated circuit chip.
  • each unit under test (such as the unit under test ( 2002), the unit under test (2004), the unit under test (2007), the unit under test (2009) run the test stimulus, and the operation result is transmitted to the corresponding comparator (such as the comparator (2003). ), comparator (2005), comparator (2006), comparator (2008) are compared with each other to obtain comparison/judgment results, and the test results are written into the feature register (2010) ), thus enabling the implementation of multiple arithmetic unit/multicore in the chip.
  • each unit to be tested (such as the unit under test (2002), the unit under test (2004), the unit under test (2007)
  • the test results of the unit under test (2009) are tested by mutual comparison.
  • the test results of the unit under test can also be compared with the expected results.
  • Figure 21 is a schematic diagram of the wiring pattern of the die output to the comparator.
  • Comparator ( 2103 ), comparator ( 2104 ) The output pad (2110) of the die (2101), the die (2102), and the output pad (in the cutting area (2107), the cutting area (2109)) 2108)
  • the connection between the comparator (2103) and the comparator (2104) must pass through the cutting path to determine the cut-off area (2105) ), to ensure that the comparator can only work when the chip is tested. After the chip is cut, the connection between the output pad and the comparator of the die is completely cut off, and the comparator does not load the output pad.
  • Figure 22 is a four embodiment of wafer testing on a wafer under test using other wafers.
  • Figure 22 (a The mid-test wafer (2201) is overlaid on the wafer (2202) as part of the test system for testing.
  • the test wafer (2201) is divided into the wafer to be tested (2202).
  • the position on the test wafer (2201) corresponding to the die of the wafer under test (2202) (2204) is used to place the solder ball (2205)
  • the vacant position (2203) on the corner of the test wafer (2201) is used to connect the test cable (2206).
  • Figure 22 (c Is a cross-sectional view of the embodiment, the solder balls (2205) on the test wafer (2201) correspond one-to-one with the pads on the wafer under test (2202), and the flattening device (2210) is pressed against the test wafer ( 2201), so that the pads of the two wafers and the solder balls are in tight contact.
  • the test cable (2206) can pass through the fixture (2208) by using a gap between the two wafers formed by the pad and the ball phase. ) Connect directly to the vacant position ( 2203 ) on the corner of the test wafer ( 2201 ).
  • the results of the test stimulus can be compared on the wafer under test or transmitted back to the test wafer and compared using a comparator on the test wafer.
  • Test wafer (2211) is better than the wafer under test (2202)
  • Test cable (2206) can be directly connected to the test wafer (2211) through the fixture (2208) to extend the portion of the wafer under test (2202), which can solve Figure 22.
  • the test cable (2206) should not be too thick.
  • the test power/test excitation is transmitted to the test wafer (2211) through the test cable during the test, and the test wafer is passed ( 2211)
  • the solder ball (2212) is transferred to the wafer under test (2202) Corresponding pads for each die on the substrate as an input to the test.
  • the results of the test stimulus can be compared on the wafer under test or transmitted back to the test wafer and compared using a comparator on the test wafer.
  • Figure 22 (e) is a third embodiment.
  • the wafer to be tested (2215) and the test wafer (2211) The original size is the same, but the wafer under test (2215) is cut off, the test wafer (2211) is a complete wafer, and the test power/test excitation is transmitted to the test wafer via the test cable (2211) ), through the solder ball (2212) on the test wafer (2211) transferred to the wafer under test (2215) Corresponding pads for each die on the substrate as an input to the test.
  • the results of the test stimulus can be compared on the wafer under test or transmitted back to the test wafer and compared using a comparator on the test wafer.
  • the wafer to be tested in this embodiment ( 2215) It is only cut off one side, but in practical applications, the multilateral can be cut according to different needs.
  • Figure 22 (f) is a fourth embodiment, the test wafer (2214) is with through silicon vias (TSV) Wafer.
  • TSV through silicon vias
  • the test cable (2216) does not need to be directly connected to the front side of the test wafer (2214), but is connected to the back side of the test wafer (2214) through the TSV.
  • the via transmits the test power/test stimulus to the wafer under test (2202).
  • the flattening device and the fixing member are omitted.
  • solder pads on the test wafer can be used to contact the solder balls on the wafer under test, and the tin on the wafer can be tested.
  • the ball contacts various soldering methods such as solder balls on the wafer to be tested.
  • Figure 23 is an example of DC testing of the measured die.
  • a pad of the die (2301) is tested /
  • a current source (2303) is connected to the solder ball (2302).
  • the current source (2303) is applied to the measured die through the pad/tin ball (2302) (2301).
  • a certain amount of power supply at this time the pad / solder ball ( 2302 ) generates a potential difference corresponding to the ground ( GND ), and the solder pad / solder ball can be known through an analog to digital conversion device ( 2304 ) ( 2302 ) )
  • the voltage value By comparing this voltage value with the reference DC characteristic voltage value, it can be determined whether the DC characteristic value satisfies the requirement.
  • Figure 24 is an embodiment of a test for a complementary metal oxide semiconductor (CMOS) image sensor.
  • the wafer ( The die on 2401) is a CMOS image sensor.
  • a light-emitting device (2404) can be applied to the wafer (2401) to some or all of the CMOS
  • the image sensor emits light of different brightness and chromaticity.
  • the probe (2405) of the dedicated pin test card (2403) does not block the light emitted by the light-emitting device (2404) and is associated with one of the wafers (2401) Corresponding pad contacts for CMOS image sensors.
  • Figure 25 It is an embodiment of a wafer test machine that provides sufficient power for a specified number of units under test at rated voltage.
  • Power supply unit (2501 ) Provides a power supply for testing all of the tested dies at the same time.
  • the test driver (2502) in the test excitation and power supply (2501) provides power from the test interface (2503) via the probe ( 2505) Parallel transmission to all of the measured dies in the wafer under test ( 2504 ) to achieve simultaneous testing of all measured dies.
  • the test interface (2503 ) can be implemented in wafers or on boards.
  • Figure 26 It is a schematic diagram of a test result table for storing a determination result when the functional module in the integrated circuit chip is tested by the present invention.
  • the judgment result is saved in the test result table (2601), each label (2602) Corresponding to a unit under test in the system, the information at the position indicates the state of the unit under test, where '?' indicates that the corresponding unit under test is not tested, and 'X' indicates that the corresponding unit under test is invalid, '0' Indicates that the corresponding measured unit is normal.
  • the test result table can be in the integrated circuit chip or outside the integrated circuit chip.
  • the storage medium may be volatile or non-volatile; it may be one-time writes that are not changed, or may be erasable and write-once.
  • the failed function module When the effective function module with the same function as the failed function module has redundancy, the failed function module is bypassed, and the redundant function module is replaced by the redundant effective function module to ensure that the system can operate normally, improve the yield, and realize the system. Self-healing feature.
  • Figure 27 is a test circuit diagram compared to the expected results. Test pads ( 2703 ) or pads that fall into the scribe line ( 2704), the input signal is the expected operation result of the die (2701) and the die (2702). The expected result is passed to the comparator via the transfer path ( 2705 ) ( 2708 ) And the comparator (2709), compared with the output of the die (2701) (2713), the output of the die (2702) (2714), compare / The result of the judgment is stored in the register (2711) and the register (2712).
  • Figure 28 is a cross-sectional view of a wafer test using a circuit board.
  • the board ( 2801 ) is passed through the fixture ( 2803 ) is fixed above the wafer under test ( 2805 ).
  • the circuit board ( 2801 ) can also have a trace channel ( 2807) Connected solder balls (2804) whose position corresponds to the position of all pads of the wafer under test (2805), and the flattening device (2811) is pressed on the circuit board (2801) ), so that the solder ball ( 2804 ) is in tight contact with the solder pad.
  • test excitation can be routed through the circuit board (2801) trace channel (2807) and solder balls ( 2804) is passed to the wafer under test (2805), so that all power supplies and test excitations of all the dies on the tested wafer (2805) pass through the solder balls on the circuit board (2801) (2804) ) incoming.
  • the test equipment passes the test cable (2813) and the circuit board (2801) on the trace channel (2807) and the solder ball (2804) from the wafer under test (2805). Receive test results on).
  • the position of the solder ball (2804) on the circuit board (2801) can also be compared with the wafer to be tested (2805).
  • the pad portion on the corresponding portion corresponds to the solder ball (2804) on the input circuit board (2801) of the die, and some of the input passes through the wafer under test (2805)
  • the input channel on the substrate is passed from the pads of other dies.
  • the soldering pad (2804) may not be included on the board (2801), but has a pad connected to the trace channel (2807).
  • the wafer to be tested ( The test pads on 2805) need to be connected to the corresponding solder balls, the pad position on the board (2801) and the wafer to be tested (2805).
  • the position of the solder ball on the whole corresponds to all or part of it.
  • the test device in this embodiment is not shown.
  • Figure 29 (a) shows an embodiment of a packaged integrated circuit test device.
  • On the test board ( 2901 ) There are a plurality of units to be tested (2902), a buffer comparison chip (2903), and an input/output interface (2904) for communicating with the test machine.
  • Unit under test ( 2902 ) is located in the slot of the circuit board, and its input end is connected to the buffer output end of the buffer comparison chip ( 2903 ); the output end of the unit under test ( 2902 ) is compared with the buffer comparison chip ( 2903 ) A set of inputs for comparison are connected; the remaining inputs of the buffer comparison chip (2903) are connected to the interface (2904) for receiving test excitations and expected results.
  • Buffer comparison chip ( 2903 Included is a buffer circuit for signal driving and a comparison circuit for comparison, wherein the buffer circuit can drive amplify the test excitation so that it can be transmitted to a plurality of units under test on the test board ( 2901 ) ( 2902), the comparison result can also be driven to be amplified so that it can be sent back to the test machine.
  • the test stimulus generated by the test machine can be buffered by the input/output interface (2904) (2903) ) input to a plurality of units under test ( 2902 ) for testing, and the operation result of the unit under test ( 2902 ) is input to the buffer comparison chip ( 2903 ) and the test machine through the interface ( 2904 ) The expected results of the input are compared, and the comparison result is transmitted back to the test machine through the interface (2904) to determine whether the unit under test (2902) is valid.
  • the two sets of buffer comparison chips (2903) for comparison can be compared with different units to be tested (2902)
  • the corresponding outputs are connected, and the outputs of different units under test (2902) are compared with each other.
  • the unit to be tested can be performed without the test machine providing the expected result (2902). Effective and suspected failure.
  • test excitation performed by different units under test may be simultaneously (or in parallel) run (or executed) in real time; the comparison between the operation result of the unit under test and the expected result or the result of operation with other units under test may be simultaneous ( Or parallel) run (or execute) in real time.
  • the buffer circuit for driving amplification of the test excitation can be omitted; if the driving result of the comparison from the comparison circuit is sufficiently large, then the operation can be omitted.
  • the comparison circuit or buffer circuit may also be located on other circuit boards connected to the test circuit board.
  • the input excitation of the unit under test ( 2902 ) can also come from electromagnetic waves.
  • Figure 29 (b) shows another embodiment of a packaged integrated circuit test device.
  • test board ( 2911 ) There are only a plurality of units under test (2915) and electrical connection interfaces (2912).
  • circuit board ( 2918 ) On the other circuit board ( 2918 ), there are a plurality of buffer comparison chips ( 2916 ) and an electrical connection interface ( 2914), and an input/output interface (2919) for communicating with the test machine.
  • Multiple test boards (2911) through electrical connection interface (2912) and circuit board (2918) The power-on connection interface ( 2914 ) is connected to form a set of test devices, and the three-dimensional effect diagram is shown in Figure 29 (c).
  • Test unit on test board ( 2911 ) ( 2915 The input and output ports are connected to the electrical connection interface (2912).
  • the test machine passes through the input and output interface ( 2919 ), the electrical connection interface ( 2914 ) and the electrical connection interface ( 2912
  • the test stimulus is input to the unit under test (2915), and the expected result is input to the buffer comparison chip (2916) through the input/output interface (2919).
  • Buffer comparison chip ( 2916) The operation result of the unit under test (2915) is compared with the expected result through the electrical connection interface (2914) and the electrical connection interface (2912), and the unit under test is determined (2915). )is it effective.
  • the buffer comparison chip ( 2916 ) can also be used as a different unit to be tested ( 2915 The corresponding outputs are compared with each other. At this time, it is not necessary for the test machine to provide the expected result, and the determination of the effective and suspected failure of the unit under test (2915) can be performed.
  • the input excitation of the unit under test (2915) may also be partially or fully derived from electromagnetic waves.
  • Figures 30A-B and 31A-B are four embodiments of a test system employing the present invention.
  • the same components use the same reference numerals.
  • the same components are not otherwise described in other embodiments.
  • test system 3000 includes wafer 3009 and wafer 3009 Connected tester 3002.
  • the wafer 3009 includes a plurality of measured crystal grains 3001, each of which contains a functional unit to be fabricated, such as an adder, a memory, a microprocessor, and a SOC. , logic operators, RF circuits that implement certain functions, CMOS sensors, etc.
  • test auxiliary circuit of the present invention as shown in Figures 30A-B and 31A-B includes an input line 3008 and an output line 3009.
  • Tester 3002 communicates bidirectionally via input line 3008 and output line 3009 with the functional units in each of the tested die 3001.
  • Input line 3008 It is connected to the access terminal 3003 of each measured die (or functional unit) 3001.
  • the die terminal 3006 is connected to an input of each comparator 3005.
  • Input line 3008 Can be used for each measured die 3001 Transfer test incentives.
  • Digital circuit test excitation typically includes operational instructions, data, control signals, clocks, power supplies, and the like; while analog circuit test excitations typically include analog signals, control signals, and power supplies. In the present invention, the test excitation may also include expected results of the operation of the measured die.
  • each register 3004 is connected to the output of the corresponding comparator 3005, and each register 3004 The output is connected to output line 3009.
  • the tester 3002 located outside the wafer passes through the input line 3008 and passes through the access terminal 3003 of each measured die 3001.
  • a test stimulus is transmitted to each of the measured die 3001 on the same wafer (which may include expected results of operation of each of the measured die).
  • Tester 3002 also passes input line 3008 The expected result is transmitted to one of the access terminals of each comparator 3005.
  • the measured die 3001 (or functional unit) According to its design function, the test excitation can be run (or executed) in real time (or in parallel), and the operation result is output from the output terminal 3006 of each measured die to the comparator 3005. Another access point.
  • the comparator 3005 compares the operation result with the expected result, and the comparison result of the measured die 3001 (or the functional unit) can be simultaneously (or in parallel) stored in the comparator 3005.
  • the corresponding output is connected to the corresponding register 3004.
  • the comparison result in each register 3004 is transmitted back to the tester 3002 through the output line 3009 by the tester 3002. It is determined whether the corresponding measured die 3001 is functioning normally according to the comparison result of each of the returns (that is, the tested functional unit is a normal unit or a failed unit).
  • each comparator 3005 is not connected to the input line 3008.
  • a corresponding die terminal 3006 connected to the comparator 3005 and a comparator 3005 of another adjacent die The inputs are connected to form a link to the die terminal 3006.
  • the other line connections are the same as the test auxiliary circuit of the present invention as shown in Fig. 30A.
  • its input line 3008 transmits only test excitations and does not transmit the expected results.
  • the tester 3002 located outside the wafer passes through the input line 3008.
  • the measured die can run (execute) the test excitation in real time (or in parallel) and transmit the operation result from the output of each measured die to the access terminals of the plurality of comparators. Measured grain in the upper left corner
  • the output of the output of the output terminal 3006 is transmitted not only to the access terminal of the comparator 3015 but also to the adjacent comparator 3014 via the internal connection 3011.
  • the access side while participating in the comparison between the two comparators. Taking the comparator 3015 as an example, one of the access terminals receives the output from the measured die 3013.
  • the other access terminal receives the operation results of other measured dies transmitted through the internal connection 3010, and compares the two to obtain a comparison result.
  • the comparison of the measured die can be simultaneously (or in parallel) stored in register 3004 connected to the output of the comparator. Individual registers 3004 The comparison results are transmitted back to the tester 3002 through the output line 3009, and the tester 3002 determines the corresponding measured die according to the comparison result of each return (3001, 3013). Whether the function is normal (ie, the functional unit under test is a normal unit or a failed unit).
  • a sensing area 3018 is provided on each of the measured crystal grains, and the sensing area 3018 It can convert light into an analog signal, a digital signal or an image signal.
  • the die with the sensing region can be a CMOS sensor die.
  • the light source is located in the out-of-wafer light source 3102 in the form of light 3019 A portion of the test stimulus is sent and received by sensor 3018 of each die 3101 being tested.
  • the remaining test excitations are passed through the tester 3002 through the input line 3008 through the access terminals of each of the tested dies 3101. 3103 transmits to a plurality of measured dies (3101) on the same wafer.
  • the tester 3002 also transmits the expected result to the comparator 3005 via the input line 3008.
  • the measured die can run (or perform) test excitation in real time (or in parallel) and output the operation result from the output terminal 3106 of each measured die to the comparator 3005.
  • the comparator 3005 compares the operation result with the expected result, and the comparison result of the measured die (or functional unit) can be simultaneously (or in parallel) stored in the register connected to the output of the comparator 3005. 3004.
  • the comparison result in each register 3004 is transmitted back to the tester 3002 through the output line 3009, and the tester 3002 determines the corresponding measured die according to the comparison result of each return.
  • the 3101 is functioning properly (that is, the functional unit under test is a normal unit or a failed unit).
  • the operating results of the measured dies are compared with each other, and the comparison result is transmitted back to the tester 3002 to determine the corresponding measured die 3101. Whether the function is normal (that is, the functional unit under test is a normal unit or a failed unit).
  • the functional paths of the crystals detected by the embodiment of Fig. 31A, which are converted into analog signals, digital signals or image signals, are also detected.
  • a receiving/transmitting antenna 3017 is provided on each of the measured dies, and the receiving/receiving/ The transmitting antenna 3017 can change the magnetic signal into an analog signal or a digital signal.
  • the die with the transmit/transmit antenna can be a radio frequency tag (RFID) die.
  • Tester 3002 passes the cable during the test operation 3021 transmits part of the test excitation to the receiving/transmitting device 3020, and performs wireless signal transmission through the receiving/transmitting antenna 3117 of the receiving/transmitting device 3020, from each measured die. The 3201's receive/transmit antenna 3017 is received.
  • the remaining test excitations are passed through the tester 3002 through the input line 3008 through the access terminals of the respective die 3201. Transfer to all measured die 3201 on the same wafer.
  • the receiving/transmitting antenna 3017 It can be fabricated on the same wafer using a semiconductor process, or it can be temporarily connected during testing.
  • the tester 3002 also transmits the expected result to the comparator via the input line 3008.
  • the measured die 3201 can run (or perform) test excitation in real time (or in parallel) and output the operation result from the output 3206 of each measured die to the comparator 3005. Another access point.
  • the comparator 3005 compares the operation result with the expected result, and the comparison result of the measured die 3001 (or the functional unit) can be simultaneously (or in parallel) stored in the comparator 3005.
  • the output is connected to the register (3004).
  • the comparison results in the respective registers (3004) are transmitted back to the tester 3002 via the output line 3009, by the tester 3002. It is determined whether the corresponding measured die 3201 is functioning normally according to the comparison result of each of the returns. Can also use a similar figure 30B
  • the operating results of the measured dies are compared with each other, and the comparison result is transmitted back to the tester 3002 to determine the corresponding measured die 3201. Whether the function is normal (that is, the functional unit under test is a normal unit or a failed unit).
  • the antenna transceiving functional path is also detected by the die detected by the embodiment of Fig. 31B.
  • the test auxiliary circuit of the present invention includes an input line 3008 and an output line 3009.
  • the path for the die to be measured can be dynamically set.
  • An embodiment of the dynamic setting of input line 3008 and output line 3009 is depicted in Figures 12-15 and associated description.
  • the output line of the test auxiliary circuit of the present invention 3009 A control circuit is included to serially output the comparison result of the measured die, so that the corresponding position of the comparison result of each die on the wafer can be found.
  • An embodiment of the control circuit is shown in Figures 14 and 15 And related descriptions are described.
  • the test auxiliary circuit of the present invention also has a power supply circuit for supplying power to all or part of the functional unit, the input circuit, the output circuit, and the decision circuit.
  • a power supply circuit for supplying power to all or part of the functional unit, the input circuit, the output circuit, and the decision circuit.
  • An embodiment of the power supply circuit is depicted in Figure 10 and related description.
  • a certain area on the wafer is dedicated to contact with the test probe to input power and excitation to the functional unit, the input circuit, the output circuit, and the decision circuit, and to read out the judgment result.
  • An embodiment of this is shown in Figure 16. And related descriptions are described.
  • test auxiliary circuit is disposed in the scribe line of the wafer. Examples of Figures 1 , 4 , 5 and 11 And related descriptions are described.
  • test auxiliary circuit can be self-tested. An embodiment thereof is described in Fig. 16 and related description.
  • test auxiliary circuit is fabricated using a wafer fabrication process. An embodiment thereof is described in Fig. 16 and related description.
  • the comparator can be a device for judging whether the two inputs are equal, that is, the comparison result is correct when the two inputs are equal, and the comparison result is an error when the two inputs are not equal; or can be used to determine the difference between the two inputs. Whether the value is within a predetermined range, that is, when the difference between the two inputs is within the predetermined interval, the comparison result is correct, and if the difference between the two inputs is not within the predetermined interval, the comparison result is an error.
  • the test auxiliary circuit of the present invention can be used as a standard unit form for the layout designer to use in a normal layout and routing process, and no additional workload is added to the layout designer.
  • the test aid circuit can be made using the same materials and processes as the substrate. For wafers, test aids can be added while masking is being designed and fabricated using the same semiconductor process, requiring no additional steps and costs in the semiconductor manufacturing stage. In the parallel test phase, using the test program corresponding to the test auxiliary circuit, it is convenient to locate the failed test unit and it is easy to use.

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Abstract

A method, device, and system for testing integrated circuits. Included on a shared base are a plurality of units under test (UUT) and a plurality of devices for comparison of UUT operation results. Different UUTs execute a same input excitation; each yields an operation result which is compared by the corresponding comparison device, yielding comparison characteristics which are used as the basis for sifting out invalid UUTs. The present invention reduces testing costs, shortens the time to achieve mass production, and lowers the loss rate.

Description

集成电路并行测试方法、装置和系统  Integrated circuit parallel test method, device and system 技术领域Technical field
本发明属于集成电路领域,具体为一种集成电路的并行测试方法、装置和系统。  The invention belongs to the field of integrated circuits, and in particular relates to a parallel test method, device and system for an integrated circuit.
背景技术Background technique
典型的半导体制作过程是在一个薄而均匀的半导体材料晶片( wafer )上制作多个相同的矩形晶粒(die)。晶粒间被宽度为 60~80 微米的切割道( scribe line )所隔离。切割道上经常放置掩膜( mask )对准符( alignment mark )和生产过程中监测质量的晶片接受测试( wafer acceptance test, WAT )的测试元件。  A typical semiconductor fabrication process is in a thin, uniform wafer of semiconductor material (wafer A plurality of identical rectangular dies are fabricated on the substrate. The grains are separated by a scribe line with a width of 60 to 80 microns. a mask is often placed on the scribe line (mask The alignment mark and the test component of the wafer acceptance test (WAT) that monitors the quality during production.
在制作过程中,光刻机一次曝光一个区域,称作光刻区域( stepper field ),每个光刻区域包含一个或多个晶粒。当所有的制作工序完成后,晶片上的每个晶粒都要通过功能测试。晶片测试设备( wafer prober )使用针测卡( pobe card )接触所要被测晶粒的焊垫( pad ),把测试程序生成的测试激励传递到被测晶粒中,被测晶粒响应输入产生相应输出,经针测卡传递到测试设备( tester )中与预期结果进行比较,若两者相等 / 匹配,则认为被测晶粒功能正确。一次测试一个晶粒。  During the fabrication process, the lithography machine exposes one area at a time, called the lithography area (stepper field) Each lithographic area contains one or more dies. When all the fabrication processes are completed, each die on the wafer passes a functional test. The wafer prober uses a pin test card ( Pobe card ) contacts the pad of the die to be tested, transmits the test stimulus generated by the test program to the die to be tested, and the measured die responds to the input to generate a corresponding output, which is transmitted to the test device via the pin test card ( The tester is compared with the expected result. If the two are equal/matched, the measured die is considered to be functional. Test one die at a time.
当一个被测晶粒通过所有的测试程序后,其位置将被记录下来,为后续的封装做准备。没有通过测试的被测晶粒将使用墨水进行标记或把位置信息存入一个叫做晶片地图( wafermap )的文件。当所有的测试完成后,将沿着切割道切割晶片,被分离的功能正确的晶粒将被封装,失效的晶粒将被丢弃。封装后的芯片将进行封装后测试,功能正确的芯片将被交付给客户。 When a measured die passes all test procedures, its position is recorded for preparation for subsequent packaging. Tested dies that have not passed the test will be marked with ink or stored in a location called a wafer map ( Wafermap )document. When all the tests are completed, the wafer will be cut along the scribe line, the properly functional dies that are separated will be packaged, and the failed dies will be discarded. The packaged chip will be tested after packaging and the functionally correct chip will be delivered to the customer.
图 1 为一般晶片测试( wafer test )示意图,待测晶片( 101 )放在晶片测试设备( 102 )上,测试器( 103 )把测试向量产生器( 104 )所产生的测试激励通过输入电缆( 105 )传递给测试头( 106 )上的针测卡( 107 ),针测卡( 107 )把数据输入到待测晶粒( 108 )中,并从待测晶粒( 108 )中读出运行结果,通过测试头( 106 )和输出电缆( 111 )传递给测试器( 103 ),测试器( 103 )把该结果送入比较器( 109 )中,与预期结果( 110 )进行比较来判定该待测晶粒( 107 )是否失效。  Figure 1 is a schematic diagram of a general wafer test in which a wafer to be tested (101) is placed on a wafer test device ( 102), the tester (103) transmits the test stimulus generated by the test vector generator (104) to the pin test card on the test head (106) through the input cable (105) (107) The needle card (107) inputs the data into the die (108) to be tested, and reads the operation result from the die (108) to be tested, passing the test head (106) and the output cable (111). Passed to the tester (103), the tester (103) sends the result to the comparator (109) and compares it with the expected result (110) to determine whether the die (107) to be tested has failed.
随着集成电路生产工艺的发展,晶片的尺寸已经从 1 英寸增长到 12 英寸,使得晶粒生产的并行度不断的提高,每个晶片上能容纳近万个晶粒。但由于测试设备测试通道( channel )数的限制,使得晶片测试仍是串行进行,逐一测试每个晶粒,晶片测试时间和晶片上晶粒的数目成正比,测试时间变得极长,测试成本变得很高。在测试设备上,仅探针( probe )在测试完一个晶粒后移动到另一个晶粒的时间就为 100ms~250ms ,这段时间无法用于测试,被白白浪费。这进一步增加了测试时间,提高了测试成本。目前,在集成电路生产中,测试、封装成本已约占整个生产成本的 25%~30% ,甚至已经达到 50% 。  With the development of integrated circuit manufacturing processes, the size of wafers has increased from 1 inch to 12 Inches, the parallelism of die production is constantly increasing, and it can accommodate nearly 10,000 grains per wafer. But because of the test equipment test channel (channel The number limit makes the wafer test still serial, testing each die one by one, the wafer test time is proportional to the number of die on the wafer, the test time becomes extremely long, and the test cost becomes very high. On the test equipment, only the probe ( Probe ) The time to move to another die after testing one die is 100ms~250ms This time cannot be used for testing and was wasted. This further increases test time and increases test costs. At present, in the production of integrated circuits, the cost of testing and packaging has accounted for about 25% to 30% of the total production cost. Even reached 50%.
此外由于测试设备到晶粒的连线延迟限制了测试频率,测试只能在较低频率下进行。  In addition, since the test equipment to die connection delay limits the test frequency, the test can only be performed at a lower frequency.
为解决该问题,一种方法是使用多探针( multi-site )实现并行测试。但是该方法受到测试设备的通道数的限制;每个测试设备的通道数在 128~1024 之间,而一个晶粒的焊垫已成百上千,使得测试的并行度上升空间不大,一般在二到四路,且通道价格昂贵,增加通道将大幅增加测试设备的价格,提高了测试成本。  One way to solve this problem is to use multi-probes (multi-site) ) Implement parallel testing. However, this method is limited by the number of channels of the test device; the number of channels per test device is 128~1024. Between, and a die has hundreds of pads, so that the parallelism of the test does not increase, generally two to four, and the channel is expensive, increasing the channel will greatly increase the price of test equipment, improve Test cost.
还有一种方法就是实现晶片上芯片自测试,以下三个专利涉及该方法,但与本专利不同。  Another method is to implement on-wafer chip self-testing. The following three patents relate to this method, but are different from this patent.
专利号为 200510008164.X 的中国专利'可实施老化与电性测试的晶圆及其实施方法'提出一种可以在晶圆上同时进行老化和电性测试的方法。该方法在晶圆上设置了老化图案生成电路( aging pattern generation circuit ),该电路可以产生无功能意义、不断反转的激励送到晶粒中同时进行老化和电性测试,它不需要向测试设备输出测试结果。  Patent No. 200510008164.X The Chinese patent 'wafers that can perform aging and electrical testing and their implementation methods' propose a method for simultaneous aging and electrical testing on a wafer. The method sets an aging pattern generating circuit on the wafer (aging Pattern generation circuit The circuit can generate non-functional, continuously inverted excitations into the die while performing aging and electrical testing without the need to output test results to the test equipment.
专利号为 200410046002.0 的中国专利'具有测试电路之半导体晶圆及制造方法'提出一种可以在晶圆上精确测量芯片电压的方法。该方法在切割道上设置了测试电路,使输出阻抗远小于探针的阻抗,且其输入阻抗远大于晶粒的输出阻抗,便于探针可以精确的测出晶粒各电极垫的参考电压。 Patent No. 200410046002.0 The Chinese patent 'Semiconductor wafer with test circuit and manufacturing method' proposes a method for accurately measuring the chip voltage on a wafer. The method sets a test circuit on the scribe line, so that the output impedance is much smaller than the impedance of the probe, and the input impedance is much larger than the output impedance of the die, so that the probe can accurately measure the reference voltage of each electrode pad of the die.
专利号为 86105604 的中国专利'用于测试集成电路元件的电路结构'提出了一种基于基片上的电路元件的测试电路结构。被测电路元件作为集成电路形成于一块公共基片上,并可经基片上的公共供电和输入线操作。该电路结构的测试电路和开关单元作为集成电路形成在同一基片上,开关单元可由测试电路控制并插在连接测试电路和电路元件的连线中,其预期值要传输到基片上用于与被测电路作比较。测试电路装有传递测试结果的输出电路,在测试电路元件时,自测试利用测试电路的中央单元比较实际和期望值来判别元件合格与否,并依次串行的进行测试。 Patent No. 86105604 The Chinese patent 'Circuit Structure for Testing Integrated Circuit Components' proposes a test circuit structure based on circuit components on a substrate. The circuit components under test are formed as an integrated circuit on a common substrate and are operable via common supply and input lines on the substrate. The test circuit and the switch unit of the circuit structure are formed as an integrated circuit on the same substrate, and the switch unit can be controlled by the test circuit and inserted in the connection between the test circuit and the circuit component, and the expected value is transmitted to the substrate for use. The circuit is compared for comparison. The test circuit is equipped with an output circuit that transmits the test result. When testing the circuit component, the self-test uses the central unit of the test circuit to compare the actual and expected values to determine whether the component is qualified or not, and serially tests.
技术问题technical problem
现有的集成电路测试方法、装置和系统,由于测试通道数的限制,每次只能测试一个或数个被测单元,无法做到被测单元的大规模同时 / 并行比较。测试通道数有限是制约测试效率提高的瓶颈。 Existing integrated circuit test methods, devices and systems, due to the limitation of the number of test channels, can only test one or several units to be tested at a time, and cannot achieve large-scale simultaneous measurement of the unit under test / Parallel comparison. The limited number of test channels is a bottleneck that limits the efficiency of testing.
技术解决方案Technical solution
本发明提出一种在共用基底( common substrate )上并行( parallel )测试复数个功能相同的微电子电路( microelectronic circuit )的集成电路测试方法、装置和系统,在共用基底上包含有复数个执行同一测试激励被测单元,通过比较装置将复数个被测单元( device under test , DUT )输出端信号与预期结果作并行比较,或通过比较装置对复数个被测单元对应输出端的信号作相互比较,以检测出失效被测单元。本发明在基本不增加测试通道的前提下,实现了成千上万个被测单元的并行测试。 The invention proposes a parallel on a common substrate (parallel Test a plurality of functionally identical microelectronic circuits (microelectronic circuit) An integrated circuit test method, apparatus, and system, comprising a plurality of units that perform the same test excitation on a common substrate, and a plurality of units to be tested by a comparison device (device under test, DUT The output signal is compared in parallel with the expected result, or the signals of the corresponding output ends of the plurality of measured units are compared with each other by the comparing device to detect the failed unit under test. The invention realizes parallel testing of thousands of units to be tested without substantially increasing the test channel.
本发明提出一种在共用基底上并行测试复数个功能相同的微电子电路的集成电路测试方法;所述基底可以是晶圆( wafer ),也可以是单一个集成电路芯片( integrated circuit chip ),也可以是电路板;其中所述方法包括: The present invention provides an integrated circuit test method for testing a plurality of functionally identical microelectronic circuits in parallel on a common substrate; the substrate may be a wafer or a single integrated circuit chip ( An integrated circuit chip ), which may also be a circuit board; wherein the method includes:
( a )通过输入途径,向基底上的复数个功能相同的被测单元输入相同的测试激励( stimulation ); (a) input the same test stimulus to a plurality of functionally identical units under test via the input path ( Stimulation );
( b )通过比较装置,并行对复数个被测单元的相应输出作相互比较; (b) comparing the corresponding outputs of the plurality of measured units in parallel by the comparing means;
( c )通过输出途径,输出复数个比较装置的比较结果与位置信息; (c) outputting comparison results and position information of the plurality of comparison devices through the output path;
( d )检测输出的比较结果与在基底上的位置信息,对相应被测单元分类,将比较结果相等 / 匹配的被测单元归为正常单元,并将比较结果不相等 / 不匹配的被测单元归为疑似失效单元。 (d) Detecting the comparison result of the output and the position information on the substrate, classifying the corresponding units to be tested, and comparing the results to be equal / The matched unit under test is classified as a normal unit, and the unit under test whose unequal/unmatched comparison result is classified as a suspected failure unit.
本发明还提出一种在共用基底上并行测试复数个功能相同的微电子电路的集成电路测试方法;所述基底可以是晶圆,也可以是单一个集成电路芯片,也可以是电路板;其中所述方法包括: The present invention also provides an integrated circuit testing method for testing a plurality of functionally identical microelectronic circuits in parallel on a common substrate; the substrate may be a wafer, a single integrated circuit chip, or a circuit board; The method includes:
( a )通过输入途径,向基底上的复数个功能相同的被测单元输入相同的测试激励; (a) inputting the same test stimulus to a plurality of functionally identical units under test on the substrate through an input path;
( b )通过比较装置,将复数个被测单元的输出与从输入途径输入的相应位置的预期结果作并行比较; ( b Comparing the output of the plurality of measured units with the expected result of the corresponding position input from the input path in parallel by the comparing means;
( c )通过输出途径,输出复数个比较装置的比较结果与位置信息; (c) outputting comparison results and position information of the plurality of comparison devices through the output path;
( d )检测输出的比较结果与在基底上的位置信息,对相应被测单元分类,将比较结果相等 / 匹配的被测单元归为正常单元,并将比较结果不相等 / 不匹配的被测单元归为失效单元。 (d) Detecting the comparison result of the output and the position information on the substrate, classifying the corresponding units to be tested, and comparing the results to be equal / The matched unit under test is classified as a normal unit, and the unit under test whose unequal/unmatched comparison result is classified as a failed unit.
本发明提出一种包含复数个功能相同的待测试晶粒的晶圆,所述复数个晶粒或复数个晶粒中对应的功能相同的功能模块即为被测单元;其中所述晶圆上还包括用半导体制程制作的辅助测试装置;所述辅助测试装置可以部分位于被测单元内部,也可以全部位于被测单元外部,包括: The present invention provides a wafer comprising a plurality of functionally identical dies to be tested, wherein the functional modules of the plurality of dies or the plurality of dies having the same function are the units to be tested; wherein the wafer is on the wafer Also included is an auxiliary test device fabricated by a semiconductor process; the auxiliary test device may be partially located inside the unit to be tested, or may be entirely located outside the unit to be tested, including:
( a )供电电路,连接辅助测试装置的电源输入端; (a) a power supply circuit connected to the power input of the auxiliary test device;
( b )输入途径,连接复数个被测单元的信号输入端;当预期结果存在时,所述输入途径还用于将预期结果传输到比较装置的一端; ( b An input path connecting the signal input ends of the plurality of measured units; the input path is also used to transmit the expected result to one end of the comparing device when the expected result exists;
( c )比较装置,一输入端与一被测单元的待测输出端相连,另一输入端与另一被测单元的相应( corresponding )待测输出端相连,或与用于输入预期结果的相应输入途径相连; (c) comparing means, one input is connected to the output to be tested of one unit under test, and the other input is corresponding to the other unit to be tested ( Correspondingly, the output to be tested is connected or connected to a corresponding input path for inputting the expected result;
( d )寄存电路,连接比较装置输出端和输出电路,用于寄存比较装置的输出结果; (d) a register circuit that connects the output of the comparator and the output circuit for registering the output of the comparator;
( e )输出电路,与复数个寄存电路相连,输出相应比较装置的比较结果及相应被测单元的位置信息。 (e The output circuit is connected to a plurality of register circuits, and outputs a comparison result of the corresponding comparison device and position information of the corresponding measured unit.
当本发明所述晶圆上的辅助测试装置位于被测晶粒内部时,在被测晶粒正常工作时所述辅助测试装置能被置为不动作( disable );当所述辅助测试装置位于被测晶粒外部时,辅助测试装置与被测晶粒的电性连接在晶圆切割时能被完全切断。 When the auxiliary test device on the wafer of the present invention is located inside the die to be tested, the auxiliary test device can be set to be inactive when the measured die is working normally (dis When the auxiliary test device is located outside the die to be tested, the electrical connection between the auxiliary test device and the die to be tested can be completely cut off when the wafer is cut.
本发明所述晶圆上的测试时额外需要的测试垫可以放置在晶粒内,也可以放置在切割道( scribe line )内,也可以放置在晶粒未使用的角落垫( corner pad )位置,还可以放置在晶粒未使用的空置垫( no connection pad )位置;测试时,探针接触到所述晶圆上单数个或复数个晶粒对应的端口垫或测试垫,即可通过输入信道将电源和信号传输到所述晶圆上全部的或选定区域中的晶粒。 The additional test pads required for testing on the wafer of the present invention can be placed in the die or placed on the cutting track (scribe Line ) can also be placed in the unused corner pad of the die, and can also be placed in the unused pad of the die (no connection pad) Position; during testing, the probe contacts a port pad or test pad corresponding to a single or a plurality of dies on the wafer, and the power and signal can be transmitted to the wafer through the input channel. The grains in the defined area.
本发明所述晶圆上的被测单元可以通过电磁波的方式无线获得供电。 The unit under test on the wafer of the present invention can wirelessly obtain power by means of electromagnetic waves.
本发明所述晶圆上的供电电路还可以连接到复数个被测单元的电源输入端。 The power supply circuit on the wafer of the present invention can also be connected to the power input terminals of a plurality of units to be tested.
本发明所述晶圆上的供电电路可以由硬连线构成、或由可配置( configurable )开关线路构成、或由硬连线与可配置开关线路组合构成。 The power supply circuit on the wafer of the present invention may be composed of hardwired or configurable (configurable) The switch circuit is constructed or composed of a hardwired and configurable switch circuit.
本发明所述晶圆上的输入途径可以通过连接到被测单元信号输入端的有线互联电路电性连接、或电磁波直接传输方式、或有线互联电路电性连接和电磁波直接传输的混合方式将数据信号和控制信号输入到所述晶圆上复数个被测单元。 The input path on the wafer of the present invention can be connected by a wired interconnection circuit electrically connected to the signal input end of the unit under test, or a direct transmission mode of electromagnetic waves, or a hybrid connection of electrical interconnection of wired interconnection circuits and direct transmission of electromagnetic waves. And a control signal is input to the plurality of measured units on the wafer.
本发明所述晶圆上的输入途径与被测单元及比较装置的有线连接均可以是由硬连线构成、或由可配置开关线路构成、或由硬连线与可配置开关线路组合构成。 The wired connection between the input path on the wafer and the unit under test and the comparison device of the present invention may be formed by hard wiring, or by a configurable switching line, or by a combination of hard wiring and configurable switching lines.
本发明所述晶圆上的输入途径还可以包括与所述被测单元相连的转换装置,用于转换输入信号后再输入到输入端。所述转换包括但不限于数字信号向模拟信号的转换或模拟信号向数字信号的转换。 The input path on the wafer of the present invention may further comprise a conversion device connected to the device under test for converting the input signal and then inputting to the input terminal. The conversion includes, but is not limited to, conversion of a digital signal to an analog signal or conversion of an analog signal to a digital signal.
当本发明所述晶圆上的被测单元的有线互联电路可配置时,能够通过外部设备以并行或串行的配置方式对所述有线互联电路中电路连接的通断作配置。传输数据信号和控制信号或预期结果时,输入端对应的所述电路连接配置为导通,输出端对应的所述电路连接配置为断开。通过对不同被测单元对应输入端间的连接作配置,根据测试激励源所处的位置,导通远离测试激励源所处的位置的方向的连接并断开相反方向的连接,可以构成各被测单元间同一测试激励输入的传播网络,使复数个被测单元获得相同的测试激励。 When the wired interconnection circuit of the unit under test on the wafer of the present invention is configurable, the on/off of the circuit connection in the wired interconnection circuit can be configured by an external device in a parallel or serial configuration manner. When transmitting the data signal and the control signal or the expected result, the circuit connection corresponding to the input end is configured to be turned on, and the circuit connection corresponding to the output end is configured to be disconnected. By configuring the connection between the corresponding input terminals of different units to be tested, according to the position where the test excitation source is located, the connection in the direction away from the position where the test excitation source is located is turned on and the connection in the opposite direction is disconnected, thereby forming each The propagation network of the same test excitation input between the units is measured so that the plurality of units under test obtain the same test excitation.
在一个实施例中,本发明所述的有线互联电路包括各被测晶粒对应输入端间可断开的带驱动的连接。对不同被测晶粒对应输入端间带驱动的连接作配置,根据测试激励源所处的位置,导通离开测试激励源所处的位置的方向的带驱动的连接并断开相反方向的带驱动的连接,可以构成各被测晶粒间同一测试激励输入的传播网络,使各被测晶粒获得相同的测试激励。 In one embodiment, the wired interconnect circuit of the present invention includes a drive-connectable connection between each of the measured dies corresponding to the input. Configuring the connection between the different measured dies corresponding to the input end, according to the position of the test excitation source, turning on the drive connection away from the position where the test excitation source is located and disconnecting the opposite direction The driving connection can form a propagation network of the same test excitation input between the measured crystal grains, so that each measured crystal obtains the same test excitation.
本发明所述晶圆上的比较装置用于对复数个被测单元中的每一个被测单元的输出端的信号取样并与从输入途径输入的相应预期结果作并行比较,或对复数个被测单元中每一个被测单元的输出端与另一个被测单元的相应输出端的信号取样并作相互比较。 The comparing device on the wafer of the present invention is configured to sample the signal of the output end of each of the plurality of tested units and compare them with the corresponding expected result input from the input path, or to measure the plurality of measured The signals of the output of each unit under test in the unit and the corresponding output of the unit under test are sampled and compared with each other.
本发明所述晶圆上的比较装置可以包括与所述被测单元相连的转换装置,用于在比较前转换输出端上的信号。 The comparing means on the wafer of the present invention may comprise switching means coupled to the unit under test for converting the signal at the output prior to comparison.
本发明所述晶圆上的比较装置还可以包括结果归并压缩装置,用于对比较结果作时间上及空间上的归并压缩。所述时间上的归并压缩,即比较装置还可以包括与所述被测单元相连的累积( accumulate )电路,用于累积并寄存比较装置的输出结果。所述空间上的归并压缩即将同一个被测单元相邻复数个输出端的比较结果合并成一个结果。 The comparison device on the wafer of the present invention may further comprise a result merging compression device for temporally and spatially merging compression of the comparison result. The merging compression in time, that is, the comparing means may further include accumulation connected to the unit to be tested ( Accumulate circuit for accumulating and registering the output of the comparison device. The spatial merge compression combines the comparison results of the adjacent plurality of outputs of the same measured unit into one result.
本发明所述用于并行测试所述晶圆上被测单元的比较装置,用于对各被测单元的输入端施加同一激励后,对输出端输出取样、转换及比较这些输出端的输出与预期结果是否相等 / 匹配,或对复数个被测单元的对应输出端输出取样、转换及相互比较。所述输出端输出可以是被测单元对外输出端口上的信号值,也可以是被测单元内部的信号值。所述输出端输出取样点可以是被测单元对外输出端口,也可以是被测单元内部的取样点。所述取样的样本可以是任意形式的信号,包括但不限于数字信号、模拟信号。所述转换包括但不限于模拟如电流、电压、阻抗等信号向数字信号的转换或数字信号向模拟信号的转换。所述比较可以是各被测单元运行结果分别与传入的预期结果之间的并行比较,也可以是各被测单元运行结果之间的并行比较。 The comparing device for testing the unit under test on the wafer in parallel, for applying the same excitation to the input end of each unit under test, outputting, converting and comparing the output and the expectation of the output end of the output end Whether the results are equal / Match, or output, convert, and compare the corresponding output outputs of a plurality of measured units. The output of the output terminal may be a signal value on an external output port of the unit under test, or may be a signal value inside the unit under test. The output sampling point of the output terminal may be an external output port of the unit under test, or may be a sampling point inside the unit under test. The sampled sample can be any form of signal including, but not limited to, a digital signal, an analog signal. The conversion includes, but is not limited to, simulating a conversion of a signal such as current, voltage, impedance, etc. to a digital signal or a conversion of a digital signal to an analog signal. The comparison may be a parallel comparison between the running results of the tested units and the expected results of the incoming, or may be a parallel comparison between the operating results of the tested units.
在利用本发明作晶粒并行测试时,可以对单数个或复数个被测单元的单数个或复数个输出端信号作取样判断,确保这个或这些输出端信号的变化是正确的,以避免因某些错误,如电源断路导致被测单元无法工作但运行结果均显示有效的误判断。所述单数个或复数个输出端信号可以是数字输出的单数个位或复数个位,也可以是仿真输出的一个或多个端口。所述多位或多个端口可以取自不同的被测单元。所述取样判断,可以对相应单数个或复数个运行结果信号作取样后送到外部设备作判断,也可以使用所述晶圆上的功能模块对相应单数个或复数个运行结果信号作取样后的判断。所述功能模块包括但不限于计数器。所述判断方法包括但不限于查看计数器记录的信号变化次数是否与预期一致。 When using the present invention for grain parallel testing, a single or multiple output signals of a single or a plurality of measured units can be sampled to ensure that the change of the signal at the output or the output is correct to avoid Some errors, such as a power failure, cause the unit under test to be inoperable, but the results of the operation show a valid misjudgment. The singular or plural output signals may be singular bits or a plurality of bits of the digital output, or may be one or more ports of the simulated output. The plurality of bits or ports may be taken from different units to be tested. The sampling judgment may be performed by sampling the corresponding single or plural operation result signals and sending them to an external device for judgment, or may use the functional modules on the wafer to sample the corresponding single or plural operation result signals. Judgment. The functional modules include, but are not limited to, a counter. The determining method includes, but is not limited to, checking whether the number of signal changes recorded by the counter is consistent with expectations.
可以以微处理器晶粒为例说明上述取样判断方法,该实施例是在本发明技术方案的前提下作实施,但本发明并不受该实施例限制。取该微处理器数据输出总线中的某一位信号作取样判断。相应计数器具有存储功能,能存储记录下来的数值。该计数器初始为零,开始运行测试向量后,在该微处理器每个内部时钟周期检测该信号的逻辑值,每检测到一个逻辑 1 ,则相应计数器自增 1 。全部测试向量运行完毕后,如果相应计数器内存储的数值与预期数值一致,则表示本次测试是有效的,可以根据相应的测试特征确定被测单元是否有效。如果相应计数器内存储的数值与预期数值不一致,则表示本次测试是无效的,或被测单元是失效的。 The above-mentioned sampling and judging method can be described by taking a microprocessor die as an example. This embodiment is implemented on the premise of the technical solution of the present invention, but the present invention is not limited by the embodiment. Take a bit signal in the microprocessor data output bus for sampling judgment. The corresponding counter has a storage function that can store the recorded value. The counter is initially zero. After the test vector is started, the logic value of the signal is detected every internal clock cycle of the microprocessor, and each logic is detected. 1 , the corresponding counter increments 1 . After all test vectors have been run, if the value stored in the corresponding counter is consistent with the expected value, it means that the test is valid, and the tested unit can be determined according to the corresponding test characteristics. If the value stored in the corresponding counter does not match the expected value, it means that the test is invalid or the unit under test is invalid.
以对被测单元作直流特性( DC )测试为例,测试得到的直流特性值经比较后可判定该直流特性值是否满足要求。所述比较包括但不限于与基准直流特性的比较、复数个被测单元直流特性值之间的比较。  DC characteristics of the unit under test (DC As an example, the DC characteristic values obtained by the test are compared to determine whether the DC characteristic value satisfies the requirements. The comparison includes, but is not limited to, a comparison with a reference DC characteristic, and a comparison between a plurality of measured unit DC characteristic values.
所述比较装置可以是只包括取样及比较功能的装置,也可以是包含取样、转换与比较功能的装置。在本发明所述的比较装置中,可以先对运行结果取样,再对取样得到的样本作比较;也可以先对运行结果作连续比较,再对连续比较结果作取样,作为实际比较结果。 The comparison means may be a device that includes only sampling and comparison functions, or may be a device that includes sampling, conversion, and comparison functions. In the comparison device of the present invention, the operation result may be sampled first, and then the samples obtained by sampling may be compared; or the running results may be continuously compared, and the continuous comparison result may be sampled as an actual comparison result.
所述比较装置还可以包含失效判定功能。当预期结果存在时,具体判定方法为:如果被测单元的输出端输出信号与预期结果全部相等 / 匹配,则可以判定该被测单元为有效单元;如果被测单元的输出端输出信号与预期结果不相等 / 不匹配,则可以判定该被测单元为疑似失效单元。当预期结果不存在时,具体判定方法为:每个被测单元的输出端输出信号与相邻的单数个或复数个被测单元相应输出端的输出信号作比较,如果所有比较完全相等 / 匹配,则可以判定该被测单元为有效单元,否则可以判定该被测单元为疑似失效单元。对于疑似失效单元还可以根据简单规则作进一步判断,该判断可以在包含被测单元的晶圆上实现,也可以在包含被测单元的晶圆外实现。由于被测单元中有效单元的数目远多于失效单元的数目,因此对于疑似失效单元,可以按需单独作常规测试激励,确定是否为真实失效单元。 The comparison device may also include a failure determination function. When the expected result exists, the specific determination method is: if the output signal of the output of the unit under test is equal to the expected result / Matching, it can be determined that the unit under test is a valid unit; if the output signal of the output of the unit under test is not equal to the expected result / If there is no match, it can be determined that the unit under test is a suspected failure unit. When the expected result does not exist, the specific determination method is: the output signal of the output of each unit under test is compared with the output signal of the corresponding output of the adjacent single or multiple units under test, if all comparisons are completely equal / If the match is made, the unit under test can be determined to be a valid unit, otherwise the unit under test can be determined to be a suspected failed unit. For the suspected failed unit, further judgment can be made according to a simple rule, which can be implemented on the wafer including the unit under test, or can be implemented outside the wafer including the unit under test. Since the number of effective units in the measured unit is far more than the number of failed units, for the suspected failed unit, the conventional test excitation can be separately performed as needed to determine whether it is a true failed unit.
所述比较装置可以是用来判断两个输入是否相等的装置,即两个输入相等时比较结果为正确,两个输入不等时比较结果为错误;也可以是用来判断两个输入的差值是否处于一个预定区间范围内的装置,即两个输入的差值在所述预定区间范围内时比较结果为正确,两个输入的差值不在所述预定区间范围内时比较结果为错误。 The comparing means may be means for judging whether the two inputs are equal, that is, the comparison result is correct when the two inputs are equal, and the comparison result is an error when the two inputs are not equal; or may be used to judge the difference between the two inputs. Whether the value is within a predetermined range, that is, when the difference between the two inputs is within the predetermined interval, the comparison result is correct, and if the difference between the two inputs is not within the predetermined interval, the comparison result is an error.
如果本发明所述晶圆上的被测单元的端口( port )作为输入和测试 / 输出双向( bi-directional )复用,则在所述端口作为输出端时通过配置将连接到所述端口的相应输入途径置为高阻。对于探针直接接触的被测单元的输入和测试 / 输出双向复用端,还可以有对应该端口的额外输出端,用于测试该双向复用端口。所述输入和测试 / 输出双向复用端与所述额外输出端均连接到比较装置上。 If the port of the unit under test on the wafer of the present invention is used as an input and test/output bidirectional ( Bi-directional) multiplexing, which sets the corresponding input path connected to the port to high impedance when the port is used as an output. Input and test of the unit under test for direct contact with the probe / The output bidirectional multiplexer can also have an additional output corresponding to the port for testing the bidirectional multiplexed port. The input and test/output bi-directional multiplexers and the additional outputs are both coupled to a comparison device.
本发明所述晶圆上的输出电路可以是由硬连线构成、或由可配置开关线路构成、或由硬连线与可配置开关线路组合构成。 The output circuit on the wafer of the present invention may be constructed of hardwired or constructed of configurable switch lines or by a combination of hardwired and configurable switch lines.
本发明所述用于并行测试所述晶圆上被测单元的输出电路能输出复数个被测单元在所述晶圆中的位置信息及相应比较装置的结果到探针、探针卡或测试机台。所述输出电路可以是可配置的,也可以是固定的。当所述输出电路为可配置时,包括输出路径和连接开关,每条输出路径连接单数个或复数个比较装置。根据配置导通连接开关,可以将连接开关两端的不同输出路径连接为单数条输出路径,根据配置断开连接开关,连接开关两端的不同输出路径即为各自独立的输出路径。当本发明所述的输出电路以固定连线构成单数条或复数条输出路径时,可以省去连接开关。 The output circuit for testing the unit under test on the wafer in parallel can output position information of a plurality of measured units in the wafer and the result of the corresponding comparison device to the probe, probe card or test Machine. The output circuit can be configurable or fixed. When the output circuit is configurable, it includes an output path and a connection switch, and each output path is connected to a single number or a plurality of comparison devices. According to the configuration of the conduction connection switch, different output paths at both ends of the connection switch can be connected into a single number of output paths. According to the configuration, the connection switches are disconnected, and the different output paths at both ends of the connection switch are independent output paths. When the output circuit of the present invention forms a single number or a plurality of output paths by a fixed connection, the connection switch can be omitted.
所述输出电路的输出方式包括但不限于串行输出,如由单数条输出路径串行移位输出相应输出信息,或并行输出,如多探针并行从复数条输出路径获取相应输出信息,或串行并行混合输出相应输出信息。如果输出电路只包含单数条输出路径,可以用串行移位的方式依次取得所有输出信息。如果输出电路包含复数条输出路径,可以用多探针并行地从复数条输出路径同时依次获取比较结果,也可以用单数套或复数套探针轮流从复数条输出路径依次获取比较结果。 The output mode of the output circuit includes, but is not limited to, a serial output, such as serial output of a single number of output paths to output corresponding output information, or parallel output, such as multi-probe parallel acquisition of corresponding output information from a plurality of output paths, or The serial parallel hybrid outputs the corresponding output information. If the output circuit only contains a single number of output paths, all output information can be obtained sequentially by serial shift. If the output circuit includes a plurality of output paths, the comparison result may be sequentially obtained from the plurality of output paths in parallel by using multiple probes, or the comparison result may be sequentially obtained from the plurality of output paths by using a single number or a plurality of sets of probes in turn.
所述输出电路输出的输出信息可以是各被测单元是否失效的判定结论,也可以是被测单元输出端对应的比较装置输出的比较结果。 The output information outputted by the output circuit may be a determination result of whether each of the measured units fails, or may be a comparison result output by the comparison device corresponding to the output end of the measured unit.
本发明所述用于并行测试所述晶圆上被测单元的输入信道和输出电路可以通过一次串行输入配置信息的方式同时建立,也可以通过多次输入配置信息的方式分步建立。所述输入通道可将输入激励和预期结果从探针所在的被测单元传输到所有被测单元。所述输出电路可以把所有被测单元或被测单元输出端的测试信息导出到探针所在的被测单元。本发明所述的输入信道和输出电路的设计比被测单元的设计可靠性更高,并具备自检测功能,可以在建立完成后先作一遍预测试,以保证所述的输入信道和输出电路本身的正确性。如果未通过预测试,则可以移动探针从另外的被测单元重新建立输入信道和输出电路,并重复所述自检测。举例而言,可以先通过输入通道将自测试用的测试激励传输到每个被测单元,再通过输出电路将上述自测试用的测试激励串行导出,即可实现对输入信道和输出电路的测试。 The input channel and the output circuit for testing the unit under test on the wafer in parallel can be established at the same time by serially inputting configuration information, or can be established step by step by inputting configuration information multiple times. The input channel can transmit input excitation and expected results from the unit under test where the probe is located to all of the units under test. The output circuit can output test information of all the tested units or the output of the measured unit to the unit under test where the probe is located. The design of the input channel and the output circuit of the present invention is higher than the design reliability of the unit under test, and has a self-detection function, which can be pre-tested once after the establishment is completed to ensure the input channel and the output circuit. The correctness of itself. If the pre-test is not passed, the probe can be moved to re-establish the input channel and output circuit from the other unit under test, and the self-test is repeated. For example, the test excitation for self-test can be transmitted to each unit under test through the input channel, and then the test excitation of the self-test is serially derived through the output circuit, thereby realizing the input channel and the output circuit. test.
本发明所述用于并行测试所述晶圆上被测单元的输入信道可以位于所述包含被测单元的晶圆上,其在所述晶圆上的具体位置包括但不限于在被测单元内、部分在被测单元内部分在所述晶圆上被测单元外和全部在所述晶圆上被测单元外。用于构成输入信道或输出电路的连线可以放置在切割道内,也可以放置在晶粒内或穿过晶粒。所述放置在切割道内的装置和连线在晶粒切割时会被自动切除,不会影响晶粒本身功能。所述放置在角落垫和空置垫位置的测试垫也不会影响晶粒本身功能。在所述晶圆上,对准标记可以移到晶粒的角落垫位置。所述辅助测试装置可以放置在晶粒内,也可以放置在切割道内或放置在其它晶圆上,并与用于晶圆接受测试的测试结构共存。所述共存的方法可以是绕过晶圆接受测试 (WAT) 测试结构或在某些位置共享 WAT 测试结构,如借用 WAT 测试结构中的测试垫用于激励的输入。 The input channel for testing the unit under test on the wafer in parallel may be located on the wafer including the unit under test, and the specific location on the wafer includes but is not limited to the unit under test The inside and the part are outside the unit to be tested on the wafer and all outside the unit to be tested on the wafer. The wires used to form the input channel or output circuit can be placed in the scribe line or placed within or through the die. The means and wires placed in the scribe line are automatically cut off during die cutting without affecting the function of the die itself. The test pads placed in the corner pads and vacant pads also do not affect the function of the die itself. On the wafer, the alignment marks can be moved to the corner pad locations of the die. The auxiliary test device can be placed within the die, or placed in a scribe line or placed on another wafer and coexisted with a test structure for wafer acceptance testing. The method of coexistence may be to bypass the wafer for acceptance testing (WAT) Test structure or share WAT test structures in certain locations, such as borrowing test pads from the WAT test structure for stimulus input.
此外,还可以在切割道内制作电容用于模仿被测晶粒输出所要驱动的负载,使测试更真实。 In addition, capacitors can be fabricated in the scribe line to mimic the load to be driven by the measured die output, making the test more realistic.
本发明所述晶圆上的辅助测试装置的部分或全部版图( layout )可以用计算机自动布局布线软件( place and route tool )基于少数几个( a few )基本单元( basic cells )自动生成。 Part or all of the layout of the auxiliary test device on the wafer of the present invention may be automatically laid out by computer software ( Place and route tool ) is automatically generated based on a few basic cells.
因现有测试机台提供的电流不够大,使用现有的测试机台搭建的共用基底集成电路测试系统,难以用高时钟频率完成大规模的共用基底集成电路测试。一种解决方法是对共用基底集成电路作多次测试。所述多次测试可以先以低速作大量被测单元的完整长测试程序测试,完成功能测试,再分区以高速作少量被测单元的关键路径短测试程序测试,测试被测单元的速度。另一种解决方法是使用下述集成电路测试系统。 Because the current provided by the existing test machine is not large enough, it is difficult to complete large-scale shared base integrated circuit test with high clock frequency by using the common base integrated circuit test system built by the existing test machine. One solution is to perform multiple tests on a shared base integrated circuit. The multiple test can first test the complete long test program of a large number of tested units at a low speed, complete the functional test, and then partition the high-speed test of the critical path short test program of a small number of tested units to test the speed of the tested unit. Another solution is to use the integrated circuit test system described below.
本发明提出一种集成电路并行测试系统,包括被测晶圆、探针卡( probe card )和测试机台;其中所述被测晶圆可以包括用半导体制程制作的全部或部分辅助测试装置;所述探针卡可以由包含部分或全部辅助测试装置的另一个基底构成;所述测试机台具有复数个电源( power supply )和相应限流器( current limiter ),能向晶圆上全部被测单元分路同时提供足够电流,确保所述被测单元能以给定工作频率工作,并在任意被测单元短路时能切断相应电源供应。 The invention provides an integrated circuit parallel test system, including a wafer to be tested and a probe card (probe card) And a test machine; wherein the test wafer may include all or part of an auxiliary test device fabricated by a semiconductor process; the probe card may be composed of another substrate including some or all of the auxiliary test devices; The machine has multiple power supplies ( Power supply ) and corresponding current limiter ), it can shunt all the units under test on the wafer while providing sufficient current to ensure that the unit under test can work at a given operating frequency and can cut off the corresponding power supply when any of the units under test are short-circuited.
本发明所述系统能执行自测试来排除辅助测试装置本身的错误,包括能够在所述晶圆上建立输入途径和输出电路,并根据所述输入途径和输出电路的测试结果,保持或重建输入途径和输出电路。 The system of the present invention is capable of performing self-tests to eliminate errors in the auxiliary test device itself, including the ability to establish input paths and output circuits on the wafer, and to maintain or reconstruct inputs based on test results of the input and output circuits. Path and output circuit.
本发明所述系统的辅助测试装置,包括: The auxiliary testing device of the system of the present invention comprises:
( a )供电电路,连接辅助测试装置的电源输入端; (a) a power supply circuit connected to the power input of the auxiliary test device;
( b )输入途径,连接复数个被测单元的信号输入端;当预期结果存在时,所述输入途径还用于将预期结果传输到比较装置的一端; ( b An input path connecting the signal input ends of the plurality of measured units; the input path is also used to transmit the expected result to one end of the comparing device when the expected result exists;
( c )比较装置,一输入端与一被测单元的待测输出端相连,另一输入端与另一被测单元的相应待测输出端相连,或与用于输入预期结果的相应输入途径相连; ( c a comparison device, wherein one input terminal is connected to the output to be tested of the unit under test, and the other input terminal is connected to the corresponding output terminal to be tested of the other unit to be tested, or is connected to a corresponding input path for inputting the expected result;
( d )寄存电路,连接比较装置输出端和输出电路,用于寄存比较装置的输出结果; (d) a register circuit that connects the output of the comparator and the output circuit for registering the output of the comparator;
( e )输出电路,与复数个寄存电路相连,输出相应比较装置的比较结果及相应被测单元的位置信息。 (e The output circuit is connected to a plurality of register circuits, and outputs a comparison result of the corresponding comparison device and position information of the corresponding measured unit.
本发明所述系统中,位于被测晶圆上晶粒外部的辅助测试装置与被测晶粒的电性连接在晶圆切割时能被完全切断。 In the system of the present invention, the electrical connection between the auxiliary test device located outside the die on the wafer to be tested and the die to be tested can be completely cut off when the wafer is cut.
本发明所述系统中被测单元可以通过电磁波的方式无线获得供电。 In the system of the present invention, the unit under test can obtain power wirelessly by means of electromagnetic waves.
本发明所述系统中供电电路还可以连接到复数个被测单元的电源输入端。 The power supply circuit in the system of the present invention can also be connected to the power input terminals of a plurality of units to be tested.
本发明所述系统中的晶圆,其中有线的供电电路可以由硬连线构成、或由可配置开关线路构成、或由硬连线与可配置开关线路组合构成。 The wafer in the system of the present invention, wherein the wired power supply circuit may be composed of hardwired wires, or may be composed of configurable switch lines, or a combination of hardwired and configurable switch lines.
本发明所述系统中辅助测试装置中的输入途径可以通过连接到被测单元信号输入端的有线互联电路电性连接、或电磁波直接传输方式、或有线互联电路电性连接和电磁波直接传输混合的方式将数据信号和控制信号输入到所述晶圆上复数个被测单元。 The input path in the auxiliary test device in the system of the present invention can be electrically connected by a wired interconnection circuit connected to a signal input end of the unit under test, or directly transmitted by electromagnetic waves, or electrically connected by a wired interconnection circuit and directly transmitted by electromagnetic waves. The data signal and the control signal are input to a plurality of units to be tested on the wafer.
本发明所述系统中辅助测试装置中的输入途径与被测单元及比较装置的有线连接均可以是由硬连线构成、或由可配置开关线路构成、或由硬连线与可配置开关线路组合构成。 The wired connection between the input path of the auxiliary test device and the unit under test and the comparison device in the system of the present invention may be composed of hardwired or configurable switch lines, or hardwired and configurable switch lines. Combined composition.
本发明所述系统中辅助测试装置中的输入途径还可以包括与所述被测单元相连的转换装置,用于转换输入信号后再输入到输入端。 The input path in the auxiliary test device in the system of the present invention may further comprise a conversion device connected to the device under test for converting the input signal and then inputting to the input terminal.
本发明所述系统中辅助测试装置中的比较装置用于对复数个被测单元的每一个被测单元的输出端的信号取样并与从输入途径输入的相应预期结果作并行比较,或对复数个被测单元中每一个被测单元的输出端与另一个被测单元的相应输出端的信号取样并作相互比较。 The comparing device in the auxiliary testing device in the system of the present invention is configured to sample the signal of the output end of each of the plurality of tested units and compare them with the corresponding expected result input from the input path, or to a plurality of The signals of the output of each of the units under test and the corresponding outputs of the other unit under test are sampled and compared with each other.
本发明所述系统中辅助测试装置中的比较装置可以包括与所述被测单元相连的转换装置,用于在比较前转换输出端上的信号。 The comparison means in the auxiliary test apparatus of the system of the present invention may include conversion means coupled to the unit under test for converting the signal on the output prior to comparison.
本发明所述系统中辅助测试装置中的比较装置还可以包括结果归并压缩装置,用于对比较结果作时间上及空间上的归并压缩。 The comparing means in the auxiliary testing device of the system of the present invention may further comprise a result merging compression means for temporally and spatially merging compression of the comparison result.
本发明所述系统中若所述被测单元的端口作为输入和测试 / 输出双向复用,则在所述端口作为输出端时通过配置将连接到所述端口的相应输入途径置为高阻。 In the system of the present invention, if the port of the unit under test is used as an input and test / The output is bidirectionally multiplexed, and the corresponding input path connected to the port is configured to be high impedance when the port is used as an output.
本发明所述系统中辅助测试装置中的输出电路可以是由硬连线构成、或由可配置开关线路构成、或由硬连线与可配置开关线路组合构成。 The output circuit in the auxiliary test device of the system of the present invention may be constructed of hardwired, or constructed of configurable switch lines, or a combination of hardwired and configurable switchwires.
本发明所述系统中构成探针卡的另一个基底包括但不限于晶圆或印刷电路板;所述另一个基底可以同时对被测晶圆上全部或部分被测单元的全部或部分电源及信号输入端口给予供电及测试激励。 Another substrate constituting the probe card in the system of the present invention includes, but is not limited to, a wafer or a printed circuit board; the other substrate can simultaneously supply all or part of the power of all or part of the unit under test on the tested wafer and The signal input port provides power and test excitation.
本发明所述系统中探针卡与被测晶圆通过突块( bump )连接;所述突块可以位于探针卡上,也可以位于被测晶圆上,或在探针卡及被测晶圆上均有突块。所述另一个基底另一端连接到测试机台。 In the system of the present invention, the probe card and the tested wafer pass the bump (bulb) The connection may be located on the probe card, or on the wafer to be tested, or on the probe card and the wafer to be tested. The other end of the other substrate is connected to the test machine.
举例而言,可以由晶圆上的锡球作为探针,并将其它晶圆或其它电路板压覆到被测晶圆上,并行对被测晶圆上的部分或全部被测单元作测试。在所述包含其它晶圆或其它电路板的测试系统中,测试用的比较器可以位于被测晶圆上,也可以位于所述其它晶圆或其它电路板上。所述其它晶圆在制程上包括但不限于与被测晶圆相同的制程、比被测晶圆落后的制程。所述其它晶圆或其它电路板在面积上包括但不限于与被测晶圆相同大小的晶圆或电路板、比被测晶圆大的晶圆或电路板。所述其它晶圆或其它电路板在结构上包括但不限于通过硅通孔( TSV , through silicon via )的晶圆或有通孔和金属导线的电路板、双面有集成电路模块( block )的晶圆。 For example, a solder ball on a wafer can be used as a probe, and other wafers or other circuit boards can be pressed onto the wafer to be tested, and some or all of the tested units on the tested wafer can be tested in parallel. . In the test system including other wafers or other boards, the comparators for testing may be located on the wafer under test or on other wafers or other boards. The other wafers include, but are not limited to, the same process as the wafer to be tested and a process behind the wafer to be tested. The other wafers or other boards include, but are not limited to, wafers or boards of the same size as the wafer being tested, or wafers or boards larger than the wafer being tested. The other wafer or other circuit board is structurally including, but not limited to, through a through silicon via ( TSV, through silicon via) wafer or circuit board with through holes and metal wires, and wafers with integrated circuit blocks on both sides.
也可以用布有金属导线的印刷电路板作探针卡,用锡球作为探针,使电源和测试激励通过金属导线经锡球被传输到被测晶圆上全部或部分被测单元的全部或部分输入端口。 It is also possible to use a printed circuit board with a metal wire as a probe card, and use a solder ball as a probe to transmit power and test excitation through the metal wire through the solder ball to all or part of the unit under test. Or part of the input port.
本发明所述系统中探针卡除电性连接被测晶圆外,还可以通过电磁波方式向复数个被测单元并行传输测试激励和 / 或供电。 In the system of the present invention, the probe card is electrically connected to the tested wafer, and the test excitation and/or power supply can be transmitted to the plurality of units under test by electromagnetic wave.
本发明所述系统中测试机台特征包括: The test machine features in the system of the present invention include:
( a )能够生成或存储对应晶圆上被测单元及辅助测试装置间的连接关系的配置信息,并能够根据当前探针所在晶粒的坐标,调整相应的配置信息后向晶圆传输所述配置信息; (a The configuration information corresponding to the connection relationship between the device under test and the auxiliary test device on the wafer can be generated or stored, and the corresponding configuration information can be adjusted according to the coordinates of the die where the current probe is located, and the configuration information is transmitted to the wafer. ;
( b )能够从晶圆中读出被测单元在基底中的位置信息及相应比较装置的结果。 (b) The positional information of the unit under test in the substrate and the result of the corresponding comparison device can be read from the wafer.
本发明所述系统中测试机台特征可包括能够生成或存储对应晶圆上被测单元测试用的数据信号和控制信号,即测试激励,并能向晶圆传输所述测试激励。 The test machine features in the system of the present invention may include the ability to generate or store data signals and control signals for testing the unit under test on the corresponding wafer, i.e., test excitation, and to transmit the test stimulus to the wafer.
本发明所述系统中测试机台特征可包括能够生成或存储对应测试激励的预期结果,并能向晶圆传输所述预期结果。 The test machine features in the system of the present invention can include the ability to generate or store an expected result of a corresponding test stimulus and to transmit the expected result to the wafer.
本发明所述系统中测试机台特征可包括能够根据比较结果是否满足测试要求对被测单元分类,记录并输出所述被测单元在晶圆上或在晶圆上及晶粒内的位置信息。 The test machine feature in the system of the present invention may include the ability to classify the unit under test according to whether the comparison result satisfies the test requirement, and record and output the position information of the unit under test on the wafer or on the wafer and in the die. .
本发明提出一种包含复数个功能相同的待测试功能模块的集成电路芯片,所述复数个功能相同的功能模块即为待测试的被测单元;其中所述集成电路芯片内还包括辅助测试装置;所述辅助测试装置仅当所述集成电路芯片处于测试模式( test mode )时工作;所述测试模式包括但不限于复数个被测单元并行运行相同的输入激励;所述辅助测试装置可以部分位于被测单元内部,也可以全部或部分位于被测单元外部,包括: The present invention provides an integrated circuit chip including a plurality of functional modules to be tested, wherein the plurality of functional modules having the same function are the tested units to be tested; wherein the integrated circuit chip further includes an auxiliary testing device. The auxiliary test device only when the integrated circuit chip is in test mode ( Test mode The test mode includes, but is not limited to, a plurality of units to be tested running the same input excitation in parallel; the auxiliary test device may be partially located inside the unit to be tested, or may be wholly or partially located outside the unit to be tested, including:
( a )供电电路,连接复数个被测单元的电源输入端; (a) a power supply circuit that connects the power input terminals of the plurality of units to be tested;
( b )输入电路,连接复数个被测单元的信号输入端;当存在预期结果时,所述输入电路还用于将预期结果传输到比较装置的一端; ( b An input circuit that connects the signal inputs of the plurality of measured units; and when there is an expected result, the input circuit is further configured to transmit the expected result to one end of the comparing device;
( c )比较装置,一输入端与一被测单元的待测输出端相连,另一输入端与另一被测单元的相应待测输出端相连,或与用于输入预期结果的相应输入电路相连; ( c Comparing means, one input terminal is connected to the output of the device to be tested to be tested, the other input terminal is connected to the corresponding output terminal of the other device under test, or is connected to a corresponding input circuit for inputting the expected result;
( d )寄存电路,连接比较装置输出端和输出电路,用于寄存比较装置的输出结果; (d) a register circuit that connects the output of the comparator and the output circuit for registering the output of the comparator;
( e )输出电路,与复数个比较装置的输出端相连,输出相应比较装置的比较结果及相应被测单元的位置信息。 (e The output circuit is connected to the output ends of the plurality of comparison devices, and outputs the comparison result of the corresponding comparison device and the position information of the corresponding measured unit.
本发明所述集成电路芯片中输入电路可以通过连接到被测单元信号输入端的有线互联电路电性连接将数据信号和控制信号输入到所述集成电路芯片内的被测单元。 In the integrated circuit chip of the present invention, the input circuit can electrically input the data signal and the control signal to the unit under test in the integrated circuit chip through a wired interconnection circuit connected to the signal input end of the unit under test.
本发明所述集成电路芯片中输入电路还可以包括与所述被测单元相连的转换装置,用于转换输入信号后再输入到输入端。 The input circuit in the integrated circuit chip of the present invention may further comprise a conversion device connected to the device under test for converting the input signal and then inputting to the input terminal.
本发明所述集成电路芯片中输入电路与被测单元及比较装置的连接均可以是由硬连线构成、或由可配置开关线路构成、或由硬连线与可配置开关线路组合构成。 The connection of the input circuit to the unit under test and the comparison device in the integrated circuit chip of the present invention may be composed of a hard-wired line, or a configurable switch line, or a combination of hard-wired and configurable switch lines.
本发明所述集成电路芯片中生成所述数据信号和控制信号的测试激励源可以在所述集成电路芯片外部,也可以在所述集成电路芯片内部,还可以由外部生成测试激励后存储在所述集成电路芯片内。 The test excitation source for generating the data signal and the control signal in the integrated circuit chip of the present invention may be external to the integrated circuit chip, or may be inside the integrated circuit chip, and may also be generated by externally generating test excitation and stored in the Within the integrated circuit chip.
本发明所述集成电路芯片中比较装置还可以包括与所述被测单元相连的转换装置,用于在比较前转换输出端上的信号。 The comparison device in the integrated circuit chip of the present invention may further comprise conversion means connected to the unit under test for converting the signal on the output before comparison.
本发明所述集成电路芯片中比较装置还可以包括结果归并压缩装置,用于对比较结果作时间上及空间上的归并压缩。 The comparing means in the integrated circuit chip of the present invention may further comprise a result merging compression means for temporally and spatially merging compression of the comparison result.
本发明所述集成电路芯片中输出电路可以是由硬连线构成、或由可配置开关线路构成、或由硬连线与可配置开关线路组合构成。 The output circuit of the integrated circuit chip of the present invention may be composed of hard-wired or configurable switch lines, or a combination of hard-wired and configurable switch lines.
本发明所述集成电路芯片可以通过输出电路将被测单元在基底中的位置及相应比较装置的结果输出,也可以将测试结果保存在集成电路芯片内部的内存中。 The integrated circuit chip of the present invention can output the position of the unit under test in the substrate and the result of the corresponding comparison device through the output circuit, and can also save the test result in the memory inside the integrated circuit chip.
本发明所述集成电路芯片可以根据所述内存中保存的测试结果,标记失效的被测功能模块,在与失效功能模块功能相同的有效功能模块有冗余的情况下,包含有所述集成电路芯片的软 / 硬件系统可以用冗余的有效功能模块替代失效功能模块,实现自修复。 The integrated circuit chip of the present invention can mark the failed function module to be tested according to the test result stored in the memory, and include the integrated circuit if the effective function module having the same function as the failed function module is redundant. Chip soft / The hardware system can replace the failed function module with a redundant effective function module to achieve self-repair.
本发明提出一种包含复数个相同功能被测单元的电路板,所述被测单元即为待测试封装后集成电路芯片( packaged chip );其中所述电路板上有复数个插槽( chip socket ),用于连接所述被测单元;所述电路板还有用于连接测试机台的接口( interface );所述电路板还有辅助测试装置,包括: The invention provides a circuit board comprising a plurality of tested units with the same function, wherein the unit to be tested is a packaged integrated circuit chip to be tested ( a packaged chip; wherein the circuit board has a plurality of chip sockets for connecting to the unit under test; and the circuit board has an interface for connecting to the test machine ( Interface ); the circuit board also has an auxiliary test device, including:
( a )至少一个比较芯片; (a) at least one comparison chip;
( b )与所述所述比较芯片、所述复数个被测单元及所述测试机台接口连接的电性连接。 (b) an electrical connection to the interface of the comparison chip, the plurality of units to be tested, and the test machine.
本发明所述的电路板,其中还可以包括至少一个缓冲芯片 , 通过电性连接与所述被测单元及所述测试机台接口相连。 The circuit board of the present invention may further include at least one buffer chip. Connected to the device under test and the test machine interface through an electrical connection.
本发明所述的电路板,其中所述被测单元的测试激励可以从测试机台直接经电路板上的电性连接传输到复数个被测单元,或从测试机台经所述缓冲芯片缓冲后通过电性连接传输到复数个被测单元,或从测试机台经电磁波生成器以电磁波的形式传输到复数个被测单元。 The circuit board of the present invention, wherein the test excitation of the unit under test can be transmitted from the test machine directly to the plurality of units under test via an electrical connection on the circuit board, or buffered from the test machine via the buffer chip. Then, it is transmitted to a plurality of measured units through an electrical connection, or transmitted from the test machine to the plurality of measured units in the form of electromagnetic waves via an electromagnetic wave generator.
本发明所述电路板中每个所述比较芯片有复数组专用输入端口,所有所述比较芯片的全部组所述专用输入端口分别通过电性连接一一对应连接所述复数个插槽的输出端口和输入输出复用端口;所述比较芯片能够通过电性连接接收被测单元运行测试激励后的输出信号,并将接收到的每一被测单元的每一输出信号与其它被测单元的相应输出信号并行比较,生成比较结果。 Each of the comparison chips in the circuit board of the present invention has a complex array dedicated input port, and all of the dedicated input ports of all the comparison chips are respectively connected to the output of the plurality of slots through electrical connection one by one. a port and an input/output multiplexing port; the comparison chip is capable of receiving an output signal of the test unit after the test unit is excited by an electrical connection, and receiving each output signal of each measured unit and the other measured unit The corresponding output signals are compared in parallel to generate a comparison result.
本发明所述电路板中每个所述比较芯片有复数组专用输入端口,所有所述比较芯片的全部组所述专用输入端口分别通过电性连接一一对应连接所述复数个插槽的输出端口和输入输出复用端口;所述比较芯片还有与测试机台接口的电性连接,用于接收预期结果;所述比较芯片能够通过电性连接接收被测单元运行测试激励后的输出信号,并将接收到的每一被测单元的每一输出信号与相应预期结果并行比较,生成比较结果。 Each of the comparison chips in the circuit board of the present invention has a complex array dedicated input port, and all of the dedicated input ports of all the comparison chips are respectively connected to the output of the plurality of slots through electrical connection one by one. a port and an input/output multiplexing port; the comparison chip further has an electrical connection with the test machine interface for receiving an expected result; and the comparison chip is capable of receiving an output signal of the test unit after the test unit is excited by the electrical connection And comparing each received output signal of each measured unit with the corresponding expected result to generate a comparison result.
本发明所述电路板中所述比较芯片还可以包括结果归并压缩装置,用于对比较结果作时间上及空间上的归并压缩,生成测试结果。 The comparison chip in the circuit board of the present invention may further comprise a result merging compression device for performing temporal and spatial merging compression on the comparison result to generate a test result.
本发明所述电路板中所述比较芯片对被测单元的测试结果通过电性连接传输回测试机台。 In the circuit board of the present invention, the test result of the comparison chip to the unit under test is transmitted back to the test machine through an electrical connection.
本发明所述电路板中还可以只包括一种芯片;所述芯片包含比较芯片和缓冲芯片的功能。 The circuit board of the present invention may further include only one type of chip; the chip includes functions of a comparison chip and a buffer chip.
本发明所述电路板中所述电路板的完整功能可以由复数块电性连接的电路板共同实现;所述复数块电路板中的一块电路板可实现所述完整功能或完整功能的一部分。 The complete function of the circuit board in the circuit board of the present invention may be implemented by a plurality of electrically connected circuit boards; one of the plurality of circuit boards may implement a part of the complete function or the complete function.
本发明提出的集成电路并行测试方法、装置和系统与现有的方法、装置和系统的本质区别在于: The essential difference between the integrated circuit parallel test method, device and system proposed by the present invention and the existing methods, devices and systems is:
1 、采用本发明的技术方案能通过输入通道将同一测试激励和 / 或预期结果一次性传送到所述基底上选定区域内的所有被测单元,而现有的方法、装置和系统均只能将测试激励和 / 或预期结果一次传送到一个被测单元,即便采用多探针测试机台,本质上还是依次测试,不可能对所有被测单元并行测试; 1. The technical solution of the present invention can stimulate the same test through the input channel and / Or the expected results are transmitted to all of the units under test in the selected area on the substrate at a time, while existing methods, devices, and systems can only test the stimulus and / Or the expected result is transmitted to one unit under test at a time. Even if the multi-probe test machine is used, it is essentially tested in turn, and it is impossible to test all the units tested in parallel;
2 、采用本发明的技术方案能对所述基底上选定区域内的所有被测单元作并行测试,而现有的方法、装置和系统均只能对所有被测单元依次轮流作测试; 2 According to the technical solution of the present invention, all the tested units in the selected area on the substrate can be tested in parallel, and the existing methods, devices and systems can only test all the tested units in turn;
3 、本发明的技术方案中的比较可以是所有被测单元的输出端信号与预期结果的并行比较,而现有的方法、装置和系统均是将被测单元的输出端信号与预期结果分别各自比较; 3 The comparison in the technical solution of the present invention may be a parallel comparison between the output signals of all the tested units and the expected results, and the existing methods, devices, and systems respectively perform the respective signals of the output of the measured unit and the expected results. Comparison
4 、本发明的技术方案中的比较也可以是未知是否有效的被测单元间输出端信号之间的并行比较,而现有的方法、装置和系统均是将被测单元的输出端信号与已知参照值比较,已知参照值包括存储在测试仪器中的值或已知有效单元的运行结果。 4 The comparison in the technical solution of the present invention may also be a parallel comparison between the signals of the output units of the tested units that are not known to be effective, and the existing methods, devices, and systems all have the output signals of the measured units and Knowing the reference value comparison, the known reference value includes the value stored in the test instrument or the result of the operation of the known effective unit.
有益效果Beneficial effect
目前在集成电路测试领域努力的方向主要是以下三个方面: At present, the efforts in the field of integrated circuit testing are mainly in the following three aspects:
1 、降低测试成本( Test Cost ); 1. Reduce the test cost (Test Cost );
2 、缩短形成规模量产时间( Time to Market ); 2, shorten the formation of mass production time (Time to Market);
3 、降低漏测率( Defective Parts Per Million )。 3. Reduce the defect rate (Defective Parts Per Million).
本发明采用多个被测集成电路并行测试的方法,一次运行输入激励可以测试单数个或复数个被测集成电路,相对于传统一次测试单个被测集成电路且逐个测试的方法测试 N 个晶粒需要 N*(M+L) 测试时间,本发明的测试方法只需要 M+L+N*R 测试时间(其中 M 为移动针测卡或移动被测封装后集成电路的时间, L 为执行测试激励的时间, R 为输出测试特征的时间, R 远小于 M+L ),因此本发明可以成数量级减少集成电路测试时间,降低了测试成本,也缩短了产品形成规模量产时间;本发明因为大幅减少输入激励运行次数,可以适当增加测试激励的长度,提高测试覆盖率,有效降低漏测率。本发明对测试台通道数没有额外要求 , 有助于降低测试成本;对于晶圆测试,当比较装置集成在晶圆上时,可避免高频信号经电缆传输的延迟,因此可以进行更高频率的测试,也可以用低端的测试台进行高端测试。 The invention adopts a method for parallel testing of a plurality of integrated circuits under test, and can test a single or a plurality of integrated circuits to be tested in one operation, and test N with respect to a single test integrated circuit and test one by one. The die requires N*(M+L) test time. The test method of the present invention only needs M+L+N*R test time (where M is the time of moving the card or moving the package after the package is tested, L To perform the test stimulus time, R is the time to output the test feature, R is much smaller than M+L Therefore, the present invention can reduce the test time of the integrated circuit by an order of magnitude, reduce the test cost, and shorten the mass production time of the product formation; the invention can appropriately increase the length of the test excitation and improve the test coverage because the input excitation operation time is greatly reduced. Rate, effectively reducing the leak rate. The invention has no additional requirements on the number of test bench channels , to help reduce the cost of testing; for wafer testing, when the comparison device is integrated on the wafer, the delay of transmission of high-frequency signals through the cable can be avoided, so that higher frequency testing can be performed, or low-end testing can be used. The station conducts high-end testing.
附图说明DRAWINGS
虽然该发明可以以多种形式的修改和替换来扩展,说明书中也列出了一些具体的实施图例并进行详细阐述。应当理解的是,发明者的出发点不是将该发明限于所阐述的特定实施例,正相反,发明者的出发点在于保护所有基于由本权利声明定义的精神或范围内进行的改进、等效转换和修改。 Although the invention may be modified in various forms of modifications and substitutions, some specific embodiments of the invention are set forth in the specification and detailed. It should be understood that the inventor's point of departure is not to limit the invention to the particular embodiments set forth, but the inventor's point of departure is to protect all improvements, equivalent transformations and modifications based on the spirit or scope defined by the claims. .
图 1 是一般晶圆测试示意图(现有技术)。 Figure 1 is a schematic diagram of a general wafer test (prior art).
图 2 是本发明所述共用基底集成电路测试装置在有预期结果情况下作测试的流程图。 2 is a flow chart of testing the shared base integrated circuit test apparatus of the present invention with expected results.
图 3 是本发明所述共用基底集成电路测试装置在无预期结果情况下作测试的流程图。 3 is a flow chart of testing of the shared base integrated circuit test apparatus of the present invention without expected results.
图 4 是晶粒输出与预期结果相比较的结构示意图。 Figure 4 is a schematic diagram of the structure of the grain output compared to the expected results.
图 5 是晶粒输出相互比较的结构示意图。 Figure 5 is a schematic diagram showing the structure in which the crystal outputs are compared with each other.
图 6 是比较器在晶粒内和晶粒外时的示意图。 Figure 6 is a schematic diagram of the comparator within and outside the die.
图 7 是测试过程中晶粒失效情况判定示意图。 Figure 7 is a schematic diagram of the determination of die failure during the test.
图 8 是本发明中相邻被测单元位置关系的实施例。 Fig. 8 is an embodiment of the positional relationship of adjacent units to be tested in the present invention.
图 9 是运行结果为模拟信号比较示意图。 Figure 9 is a schematic diagram of the comparison of the operation results to analog signals.
图 10 是本发明针对供电方式的实施例。 Figure 10 is an embodiment of the present invention for a power supply mode.
图 11 是本发明针对对准标记位置的实施例与针测垫在晶圆上的可能位置分布图。 Figure 11 is a diagram showing possible positional distributions of an embodiment of the present invention for alignment mark locations on a wafer.
图 12 是晶圆上光刻区域内部输入 信道结构图和输出电路结构图。 Figure 12 is a diagram showing the structure of the input channel and the structure of the output circuit in the lithography area on the wafer.
图 13 是本发明针对晶粒相互比较时电路连线配置的实施例。 Figure 13 is an embodiment of the present invention for a circuit connection configuration when the dies are compared with each other.
图 14 是本发明针对配置方法的实施例。 Figure 14 is an embodiment of the present invention for a configuration method.
图 15 是一晶圆测试输入路径和测试特征导出路径示意图。 Figure 15 is a schematic diagram of a wafer test input path and test feature export path.
图 16 是一种具有大电源界面的晶圆示意图。 Figure 16 is a schematic diagram of a wafer with a large power interface.
图 17 是射频晶粒的晶圆测试示意图。 Figure 17 is a schematic diagram of wafer testing of RF dies.
图 18 是自测试晶圆示意图。 Figure 18 is a schematic diagram of a self-test wafer.
图 19 是一种新型晶圆测试系统图。 Figure 19 is a diagram of a new wafer test system.
图 20 是多运算单元 / 多核集成电路芯片内部测试结构图。 Figure 20 is a diagram showing the internal test structure of a multi-operation unit/multi-core integrated circuit chip.
图 21 是晶粒输出到比较器的连线方式示意图。 Figure 21 is a schematic diagram of the wiring pattern of the die output to the comparator.
图 22 是利用其它晶圆对被测晶圆上晶粒测试的四个实施例。 Figure 22 is a four embodiment of wafer testing on a wafer under test using other wafers.
图 23 是对被测晶粒作 DC 测试的实施例。 Figure 23 is an example of DC testing of the measured die.
图 24 是对互补式金属氧化层半导体 (complementary metal-oxide-semiconductor, CMOS) 图像传感器测试的实施例。 Figure 24 is a complementary metal oxide semiconductor (complementary Metal-oxide-semiconductor, CMOS) Example of image sensor testing.
图 25 是一种能在额定电压下提供够指定数量被测单元测试用的足够电源的晶圆测试机台的实施例。 Figure 25 It is an embodiment of a wafer test machine that provides sufficient power for a specified number of units under test at rated voltage.
图 26 是利用本发明测试集成电路芯片中功能模块时用于存储测试结果的测试结果表的示意图。 Figure 26 is a diagram showing a test result table for storing test results when testing functional modules in an integrated circuit chip using the present invention.
图 27 是一种与预期结果相比较的测试电路图。 Figure 27 is a test circuit diagram compared to the expected results.
图 28 是利用电路板作晶圆测试的剖视图。 Figure 28 is a cross-sectional view of a wafer test using a circuit board.
图 29 是封装后集成电路测试装置实施例。 Figure 29 is an embodiment of a packaged integrated circuit test device.
图 30A-B 和图 31A-B 是本发明的四个实施例。 Figures 30A-B and 31A-B are four embodiments of the present invention.
本发明的最佳实施方式BEST MODE FOR CARRYING OUT THE INVENTION
图 2 是本发明所述集成电路并行测试的最佳实施方式。  2 is a preferred embodiment of the parallel test of the integrated circuit of the present invention.
本发明的实施方式Embodiments of the invention
本发明的技术思路是结构和功能相同的多个被测集成电路 / 晶粒 / 功能芯片执行同一输入激励,各自产生运行结果,运行结果被并行相互比较或者与预期结果作并行比较以检测出失效集成电路 / 晶粒 / 功能芯片。 The technical idea of the present invention is a plurality of integrated circuits under test/die with the same structure and function / The functional chips perform the same input excitation, each generating a running result, and the running results are compared with each other in parallel or in parallel with the expected result to detect the failed integrated circuit/die/function chip.
请参阅图 2 ,图 2 是本发明所述共用基底集成电路测试装置在有预期结果情况下作测试的流程图。本实施例中比较装置不包括失效判定功能。首先进入步骤一( 202 ),输入激励,再进入步骤二( 203 )并行运行各被测单元。之后进入步骤三( 205 )对各被测单元的运行结果作取样,并与预期结果作并行比较,记录比较结果,该取样比较的次数取决于测试精度的要求。对全部测试激励的运行结果取样比较完成后,进入步骤四( 206 ),作结果判定,产生被测单元的位置信息及相应判定结果。最后进入步骤五( 207 ),输出被测单元的位置信息及相应判定结果。 Please refer to Figure 2 and Figure 2 It is a flow chart of testing the shared base integrated circuit test device of the present invention with expected results. The comparison device in this embodiment does not include a failure determination function. First go to step one (202 ), input the excitation, and then go to step 2 (203) to run each unit under test in parallel. Then go to step three (205 The sampling results of each unit under test are sampled and compared with the expected results, and the comparison result is recorded. The number of comparisons of the samples depends on the requirements of the test accuracy. After the sampling comparison of the running results of all test incentives is completed, proceed to step four ( 206), as a result of the determination, the position information of the unit under test and the corresponding determination result are generated. Finally, proceed to step 5 (207) to output the position information of the unit under test and the corresponding determination result.
请参阅图 3 ,图 3 是本发明所述共用基底集成电路测试装置在无预期结果情况下作测试的流程图。本实施例中比较装置包括失效判定功能。首先进入步骤一( 302 ),输入激励,再进入步骤二( 303 )并行运行各被测单元。之后进入步骤三( 304 )对各被测单元的运行结果作取样,作被测单元间的运行结果的取样比较,并记录比较特征。该取样比较的次数取决于测试精度的要求。对全部测试激励的运行结果取样比较完成后,进入步骤四( 306 ),产生被测单元的判定结果。最后进入步骤五( 307 ),输出被测单元的位置信息及相应判定结果。测试特征为疑似失效单元或失效单元判定结果。该判定结果可以是失效单元坐标信息或其它可以定位失效单元的信息。完成共用基底集成电路测试后,可以根据需要对疑似失效单元作再测试,也可以根据需求简单地认为疑似失效单元是真正失效的。失效单元可以通过物理的方式标记出来。  Please refer to Figure 3 and Figure 3 It is a flow chart of testing the shared base integrated circuit test device of the present invention without any expected result. The comparison device in this embodiment includes a failure determination function. First go to step one (302 ), input the excitation, and then go to step 2 (303) to run each unit under test in parallel. Then go to step three (304 The sampling results of each unit under test are sampled, and the sampling results of the running results between the units to be tested are compared, and the comparison features are recorded. The number of times this sample is compared depends on the accuracy of the test. After the sampling comparison of the running results of all test incentives is completed, proceed to step four ( 306), generating a determination result of the unit under test. Finally enter step five (307 ), outputting the position information of the unit under test and the corresponding determination result. The test feature is a suspected failure unit or a failure unit determination result. The result of the determination may be failure unit coordinate information or other information that can locate the failed unit. After the completion of the shared base integrated circuit test, the suspected failed unit can be retested as needed, or the suspected failed unit can be simply considered to be truly invalid according to the requirements. A failed unit can be physically marked.
图 4 是晶粒输出与预期结果相比较的结构示意图。双向开关( 403 )、双向开关( 404 )、双向开关( 443 )、双向开关( 444 )配置为向右传输,有线互联电路( 402 )将左边传入的激励( 401 )通过输入焊垫( 406 )、输入焊垫( 407 )、输入焊垫( 408 )分别传入晶粒( 409 )、晶粒( 410 )、晶粒( 411 )。预期结果( 412 )从左边传入,通过连接电路( 413 )传入比较器( 414 )、比较器( 415 )、比较器( 416 ),晶粒( 409 )、晶粒( 410 )、晶粒( 411 )下边的运行结果通过各自输出焊垫( 425 )、输出焊垫( 426 )、输出焊垫( 427 )分别传入比较器( 414 )、比较器( 415 )、比较器( 416 )。比较器( 414 )、比较器( 415 )、比较器( 416 )的比较 / 判定结果分别存储在特征寄存器( 417 )、特征寄存器( 418 )、特征寄存器( 419 )内。所有特征寄存器的初值由外部控制信号统一设置,或是由自激励产生。当比较器两组输入不相等 / 不匹配时,特征寄存器内部值改变,且只改变一次,即相邻晶粒的输出只要有一次比较不相等 / 不匹配,就标志相关晶粒为疑似失效晶粒。特征寄存器( 417 )、特征寄存器( 418 )、特征寄存器( 419 )与其它特征寄存器可以连接成移位寄存器链( 420 ),用于输出被测晶粒的位置信息及相应比较 / 判定结果。激励( 401 )可不通过输入焊垫( 406 )、输入焊垫( 407 )、输入焊垫( 408 )直接用金属线与内部模块连接,比较 / 判定结果也可不通过输出焊垫( 425 )、输出焊垫( 426 )、输出焊垫( 427 )直接用金属线将其输出。所述比较器可以有单数或复数个输入。  Figure 4 is a schematic diagram of the structure of the grain output compared to the expected results. Bidirectional switch ( 403 ), bidirectional switch ( 404 ), the bidirectional switch ( 443 ), the bidirectional switch ( 444 ) is configured to transmit to the right, and the wired interconnect circuit ( 402 ) passes the left incoming excitation ( 401 ) through the input pad ( 406 ) The input pad (407) and the input pad (408) are respectively introduced into the die (409), the die (410), and the die (411). Expected results ( 412 ) incoming from the left, through the connection circuit ( 413 ) to the comparator ( 414 ), comparator ( 415 ), comparator ( 416 ), die ( 409 ), die ( 410 ), die ( 411) The lower running results are respectively transmitted to the comparator (414) and the comparator (415) through the respective output pads (425), output pads (426), and output pads (427). ), comparator (416). The comparison/decision results of the comparator (414), the comparator (415), and the comparator (416) are stored in the feature register (417) and the feature register, respectively. 418), in the feature register (419). The initial value of all feature registers is set by the external control signal or by self-excitation. When the comparator input is not equal / When there is no match, the internal value of the feature register changes and only changes once, that is, as long as the output of the adjacent die is not equal/mismatched once, the relevant die is marked as a suspected failed die. Feature register (417 ), the feature register ( 418 ), the feature register ( 419 ) and other feature registers can be connected into a shift register chain ( 420 ) for outputting the position information of the measured die and corresponding comparison / judgement result. The excitation ( 401 ) can be directly connected to the internal module by the input pad ( 406 ), the input pad ( 407 ), and the input pad ( 408 ), comparing / The determination result may be directly outputted by a metal wire without using the output pad (425), the output pad (426), and the output pad (427). The comparator can have a single or multiple inputs.
图 5 是晶粒输出相互比较的结构示意图。双向开关( 503 )、双向开关( 504 )配置为向右传输,有线互联电路( 502 )将左边传入的激励( 501 )通过输入焊垫( 505 )、输入焊垫( 506 )、输入焊垫( 507 )分别传入晶粒( 508 )、晶粒( 509 )、晶粒( 510 )。晶粒( 509 )下边的运行结果通过输出焊垫( 512 )传送给比较器( 514 )、比较器( 515 ),晶粒( 508 )下边的运行结果通过输出焊垫( 511 )传送给比较器( 514 )与晶粒( 509 )的输出作比较。晶粒( 510 )下边的运行结果通过输出焊垫( 513 )传送给比较器( 515 )与晶粒( 509 )的输出作比较。比较器( 514 ),比较器( 515 )的比较 / 判定结果分别存储在特征寄存器( 516 )、特征寄存器( 517 )内。所有特征寄存器的初值由外部控制信号统一设置,或是由自激励产生。当比较器两组输入不相等 / 不匹配时,特征寄存器内部值改变,且只改变一次,即相邻晶粒的输出只要有一次比较不相等 / 不匹配,就标志相关晶粒为疑似失效晶粒。特征寄存器( 516 )、特征寄存器( 517 )与其它特征寄存器可以连接成移位寄存器链( 518 ),用于输出被测晶粒的位置信息及相应比较 / 判定结果测试特征值。激励( 501 )可不通过输入焊垫( 505 )、输入焊垫( 506 )、输入焊垫( 507 )直接用金属线与内部模块连接,比较 / 判定结果也可不通过输出焊垫( 511 )、输出焊垫( 512 )、输出焊垫( 513 )直接用金属线将其输出。所述比较器可以有单数或复数个输入。  Figure 5 is a schematic diagram showing the structure in which the crystal outputs are compared with each other. Bidirectional switch ( 503 ), bidirectional switch ( 504 Configuring to transmit to the right, the wired interconnect circuit (502) passes the left incoming stimulus (501) through the input pad (505), the input pad (506), and the input pad (507). ) Afferent grains ( 508 ), grains ( 509 ), and grains ( 510 ), respectively. The result of the underside of the die (509) is transferred to the comparator via the output pad (512) (514) The comparator (515), the result of the operation under the die (508) is passed through the output pad (511) to the comparator (514) for comparison with the output of the die (509). Grain (510 The lower run result is compared to the output of the die (509) via the output pad (513) to the comparator (515). Comparison of comparator ( 514 ), comparator ( 515 ) / The determination results are stored in the feature register (516) and the feature register (517), respectively. The initial value of all feature registers is set by the external control signal or by self-excitation. When the comparator input is not equal / When there is no match, the internal value of the feature register changes and only changes once, that is, if the output of the adjacent die is not equal/mismatched once, the relevant die is marked as a suspected failed die. Feature register ( 516 The feature register (517) and other feature registers may be coupled into a shift register chain (518) for outputting position information of the measured die and corresponding comparison/decision result test feature values. Incentive (501 ) The input pad ( 505 ), input pad ( 506 ), and input pad ( 507 ) can be directly connected to the internal module by metal wires. The comparison / determination result can also pass through the output pad ( 511 ) ), the output pad (512), and the output pad (513) are directly outputted by metal wires. The comparator can have a single or multiple inputs.
图 6 ( a )是比较器在晶粒内时的示意图。传输网络( 601 )把预期结果或相邻晶粒的运行结果通过输入输出端口( I/O pin )( 602 )的焊垫( 603 )输入到当前晶粒中,与当前晶粒的相应运行结果( 604 )使用比较器( 605 )作比较。此时输入输出端口( 602 )中输出驱动器( 606 )设置为高阻,输入驱动器( 608 )打开。  Figure 6 (a) is a schematic diagram of the comparator as it is inside the die. Transmission network (601 The expected result or the running result of the adjacent die is input into the current die through the pad (603) of the input/output port (I/O pin) (602), and the corresponding operation result of the current die (604) ) Use the comparator ( 605 ) for comparison. At this time, the output driver (606) in the input/output port (602) is set to high impedance, and the input driver (608) is turned on.
图 6 ( b )是比较器在晶粒外时的示意图。当前晶粒的运行结果( 611 )通过输出驱动器( 612 )与其焊垫( 613 )输出到比较器( 614 )中与焊垫( 616 )传来的预期结果或相邻晶粒的运行结果( 615 )作比较。 Figure 6 (b) is a schematic diagram of the comparator when it is outside the die. The current die operation result (611) is passed through the output driver ( 612) comparing the output of the pad (613) to the comparator (614) with the expected result from the pad (616) or the running result of the adjacent die (615).
图 7 是测试过程中晶粒失效情况判定示意图。在该示意图中,每个被测晶粒四个边上的运行结果分别与相邻的被测晶粒相应边上的运行结果通过比较装置作比较,其中,比较结果为相等 / 匹配的比较装置图标为白色,比较结果为不相等 / 不匹配的比较装置图标为黑色。在该实施例中,所有判定晶粒是否失效的装置可以在晶圆上,也可以在晶圆外测试机台上。如图所示,图 7 ( a )是无失效晶粒时的测试情况示意图,其中被测晶粒( 701 )在四个边上的运行结果分别通过连线( 707 )与被测晶粒( 702 )、被测晶粒( 703 )、被测晶粒( 704 )、被测晶粒( 705 )相应边的运行结果作比较,比较器( 706 )图示为白色表示被测晶粒( 701 )与被测晶粒( 704 )相应边的比较相等 / 匹配,图中四个边上的比较完全相等 / 匹配,因此可以判定被测晶粒( 701 )为正常晶粒。 Figure 7 It is a schematic diagram for determining the failure of the die during the test. In the schematic diagram, the operation results on the four sides of each measured die are compared with the running results on the corresponding sides of the adjacent measured die by a comparison device, wherein the comparison result is equal / The matching comparison device icon is white and the comparison result is not equal / The mismatched comparison device icon is black. In this embodiment, all means for determining whether the die has failed may be on the wafer or on an off-wafer test machine. As shown, Figure 7 (a ) is a schematic diagram of the test case when there is no failure crystal, wherein the operation results of the measured crystal grains ( 701 ) on the four sides pass through the connection line ( 707 ) and the measured crystal grain ( 702 ), and the measured crystal grain ( 703 ) ), the measured die (704), the measured result of the corresponding side of the measured die (705) are compared, and the comparator (706) is shown in white to indicate the measured die (701) and the measured die (704) The comparison of the corresponding sides is equal/matched, and the comparisons on the four sides of the figure are completely equal/matched, so that the measured grain (701) can be determined to be a normal grain.
图 7 ( b )是一个被测晶粒部分失效时的测试情况示意图,被测晶粒( 711 )在四个边上分别与被测晶粒( 712 )、被测晶粒( 713 )、被测晶粒( 714 )、被测晶粒( 715 )相应边的运行结果比较,其中比较器( 716 )和比较器( 717 )图示为黑色,分别表示被测晶粒( 711 )与被测晶粒( 712 )和被测晶粒( 714 )的比较不相等 / 不匹配,连线( 718 )、连线( 719 )为其相应的连线。而被测晶粒( 711 )和被测晶粒( 713 )、被测晶粒( 715 )相应边上的比较相等 / 匹配,因此可以判定被测晶粒( 711 )为部分失效。 Figure 7 (b) is a schematic diagram of the test situation when the measured die partially fails, the measured die (711 ) on the four sides, respectively, compared with the operation results of the measured die ( 712 ), the measured die ( 713 ), the measured die ( 714 ), and the measured die ( 715 ), where the comparator ( 716 And the comparator (717) is shown in black, which means that the measured die (711) is not equal/mismatched with the measured die (712) and the measured die (714), and the connection (718) ), connect (719) to its corresponding connection. The measured grain (711) is equal to the measured grain (713) and the measured grain (715) on the corresponding side. Matching, so it can be determined that the measured die (711) is partially failed.
图 7 ( c )是一个被测晶粒完全失效时的测试情况示意图,被测晶粒( 721 )和被测晶粒( 722 )、被测晶粒( 723 )、被测晶粒( 724 )、被测晶粒( 725 )在四个边上相应运行结果的比较全部不相等 / 不匹配,如图所示的比较器( 726 )、比较器( 727 )、比较器( 728 )、比较器( 729 )、比较器( 730 )、比较器( 731 )、比较器( 732 )、比较器( 733 )全部为黑色,其中连线( 734 )为被测单元( 721 )与比较器( 726 )之间的连线。因此可以判定被测晶粒( 721 )为失效晶粒。在作比较时,各端口的比较结果可以通过逻辑电路相与,只输出一个比较结果,实现比较结果在空间上的压缩;也可以通过累积电路累积比较结果,实现比较结果在时间上的压缩。经压缩后,可以降低输出电路的带宽需求,加快测试过程。 Figure 7 (c) is a schematic diagram of the test case when the measured die is completely failed, the measured die (721) and the measured die ( 722), the measured die (723), the measured die (724), the measured die (725) on the four sides of the corresponding operation results are all unequal / mismatch, as shown in the comparator ( 726), comparator (727), comparator (728), comparator (729), comparator (730), comparator (731), comparator (732), comparator ( 733) is all black, and the connection (734) is the connection between the unit under test (721) and the comparator (726). Therefore, the measured crystal grain can be determined (721 ) is a failure grain. In the comparison, the comparison result of each port can be compared by the logic circuit, and only one comparison result is output, and the comparison result is spatially compressed; the comparison result can be accumulated by the accumulation circuit to realize the compression of the comparison result in time. After compression, the bandwidth requirements of the output circuit can be reduced and the test process can be accelerated.
图 8 是本发明中相邻被测单元位置关系的实施例。其中 A 、 B 、 C 、 D 为被测单元的四个角,如图所示,图 8 ( a )为普通放置位置示意图,被测单元( 801 )、被测单元( 802 )、被测单元( 803 )、被测单元( 804 )按照统一朝向放置,每个被测单元输出端口通过连线与相邻被测单元相应边上的输出端口作比较,如被测单元( 801 )的输出端口与被测单元( 802 )的相应输出端口作比较。图中连线( 813 )为被测单元( 802 )和被测单元( 804 )相应输出端口间作比较的连线。 Fig. 8 is an embodiment of the positional relationship of adjacent units to be tested in the present invention. Where A, B, C, D As the four corners of the unit under test, as shown in the figure, Figure 8 (a) is a schematic diagram of the normal placement position, the unit under test ( 801 ), the unit under test ( 802 ), the unit under test ( 803 ), and the unit under test ( 804) According to the uniform orientation, each output port of the unit under test is compared with an output port on the corresponding side of the adjacent unit under test by a connection, such as an output port of the unit under test (801) and a unit under test (802). Corresponding output ports are compared. The connection line (813) in the figure is a connection between the corresponding output port of the unit under test (802) and the unit under test (804).
图 8 ( b )为旋转放置位置示意图,每个被测单元的放置位置与相邻被测单元的放置位置呈旋转关系,如被测单元( 806 )的放置位置分别与被测单元( 805 )和被测单元( 808 )的放置位置呈 180 度旋转关系,被测单元( 808 )的放置位置分别与被测单元( 806 )和被测单元( 807 )的放置位置呈 180 度旋转关系。这样在作测试时,每个被测单元的输出端口和相邻被测单元的输出端口相邻,缩短走线距离且易于连接。如图所示,其中连线( 814 )为被测单元( 806 )与被测单元( 808 )相应输出端口之间作比较的连线。 Figure 8 ( b For the rotation placement position diagram, the placement position of each unit to be tested is in a rotating relationship with the placement position of the adjacent unit to be tested, such as the placement position of the unit under test (806) and the unit under test (805) and the unit under test. ( The placement position of 808 is 180 degree rotation, and the position of the unit under test (808) is 180 degrees with the position of the unit under test (806) and the unit under test (807). Degree rotation relationship. In this way, when testing, the output port of each unit under test is adjacent to the output port of the adjacent unit under test, shortening the distance of the trace and being easy to connect. As shown in the figure, the connection (814) is the unit under test (806) ) A comparison between the corresponding output ports of the unit under test (808).
图 8 ( c )为镜像放置位置示意图,每个被测单元的放置位置与相邻被测单元的放置位置呈镜像关系,如被测单元( 809 )的放置位置分别与被测单元( 810 )和被测单元( 811 )的放置位置呈镜像关系,被测单元( 811 )的放置位置分别与被测单元( 809 )和被测单元( 812 )的放置位置呈镜像关系。被测单元的输出端口与相邻被测单元的相应输出端口位置更临近,连接走线更加方便。如图所示,其中连线( 815 )为被测单元( 810 )与被测单元( 812 )相应输出端口之间作比较的连线。该实施例更适合于 RFID 等无方向性芯片的测试。 Figure 8 (c As a schematic diagram of the position of the mirror, the position of each unit to be tested is mirrored with the position of the adjacent unit to be tested, such as the position of the unit under test (809) and the unit under test (810) and the unit under test. ( The placement position of 811) is mirror image, and the position of the unit under test (811) is respectively placed with the unit under test (809) and the unit under test (812). The placement position is mirrored. The output port of the unit under test is closer to the corresponding output port position of the adjacent unit under test, and it is more convenient to connect the lines. As shown in the figure, the connection (815) is the unit under test (810) ) A comparison between the corresponding output ports of the unit under test (812). This embodiment is more suitable for testing non-directional chips such as RFID.
图 9 是运行结果为模拟信号比较示意图。晶粒( 901 )的运行结果为模拟信号,则利用模拟数字转换器( 902 )对信号的采样作转换,再把转换后的结果送到数字比较器( 903 )中,产生两晶粒是否相等 / 匹配的比较 / 判定结果,并把比较 / 判定结果存入特征寄存器( 904 )中。晶粒( 901 )的输入可以为直接的模拟信号输入,也可以是数字信号经数字模拟转换后输入。 Figure 9 is a schematic diagram of the comparison of the operation results to analog signals. Grain (901 The result of the operation is an analog signal, the analog signal converter (902) is used to convert the sampling of the signal, and the converted result is sent to the digital comparator (903) to generate whether the two crystal grains are equal / Match the comparison/judgment result and store the comparison/decision result in the feature register (904). Grain (901 The input can be a direct analog signal input, or a digital signal can be input after digital analog conversion.
图 10 是本发明针对供电方式的实施例。晶圆内所有晶粒( 1001 )的电源焊垫( 1002 )可全部连入全局电源网络( 1003 ),或分区电源连接在一起,形成多个局部电源网络。接地焊垫( 1004 )也可全连入接地网格( 1005 )或分区连接形成多个局部接地网络。全局或分区中的接地焊垫可以全部连接在一起,每一个电源焊垫各自经过一个大尺寸 PMOS 器件连接到全局或分区电源网络,这些 PMOS 器件的栅极连接到一可配置网络,控制每个晶粒电源的通断。焊垫由金属构成,置于晶粒外侧或晶粒上,可以用金属连线与本发明所述结构连接。 Figure 10 is an embodiment of the present invention for a power supply mode. Power pad for all die (1001) in the wafer (1002) ) All can be connected to the global power network (1003), or the partition power supplies are connected together to form multiple local power networks. The ground pad (1004) can also be fully connected to the ground grid (1005) Or a partition connection to form multiple local ground networks. The ground pads in the global or partition can all be connected together, and each power pad is connected to a global or partitioned power network via a large PMOS device. The gate of the PMOS device is connected to a configurable network that controls the on and off of each die supply. The pads are constructed of metal, placed on the outside of the die or on the die, and may be joined to the structure of the present invention by metal wires.
图 11 ( a )是本发明针对对准标记位置的实施例。晶圆上每个晶粒之间有 60 微米 -80 微米的切割道( 1101 ),对准标记( 1102 )用于每层掩模版的对准,通常处于切割道( 1101 )内,且占用所有版图层。由于本发明需要在切割道( 1101 )内设计长连线,为了不与对准标记冲突,可将对准标记移到晶粒的角落垫( 1104 )位置。输入信道、比较装置和输出电路可与用于晶圆接受测试的 WAT 测试结构相共存。共存方法可以是绕过 WAT 测试结构或在某些位置共享 WAT 测试结构,如借用 WAT 测试结构中的针测垫用于激励的输入。 Figure 11 (a) is an embodiment of the present invention for alignment mark positions. 60 microns -80 between each die on the wafer The micron dicing track (1101), the alignment mark (1102) is used for the alignment of each reticle, typically within the scribe line (1101), and occupies all of the layout layers. Since the present invention requires a cutting path ( 1101) The long connection is designed. In order not to collide with the alignment mark, the alignment mark can be moved to the corner pad (1104) of the die. Input channel, comparison device and output circuit can be used with WAT for wafer acceptance testing The test structures coexist. The coexistence method can be to bypass the WAT test structure or share the WAT test structure at certain locations, such as borrowing a needle pad from the WAT test structure for the input of the stimulus.
图 11 ( b )是一种针测垫在晶圆上的可能位置分布图。在本发明中,需要为测试网络提供针测垫以供传入时钟,配置信息等。如果在晶粒( 1111 )中有未被使用的空置焊垫,则可以作为针测垫使用,如 A 位置( 1112 ), B 位置( 1113 )两个位置;也可以把针测垫设在晶粒( 1111 )的角落垫,如 C 位置( 1114 )。也可以把针测垫设在切割道( 1101 )中,如 D 位置( 1117 ), E 位置( 1118 )两个位置。 Figure 11 ( b ) is a possible location map of the needle pad on the wafer. In the present invention, it is necessary to provide a test pad for the test network for incoming clocks, configuration information, and the like. If in the grain (1111 There are unused vacant pads in the hole, which can be used as a needle pad, such as A position (1112), B position (1113); can also be placed on the die (1111) ) The corner pad, such as the C position (1114). It is also possible to place the needle test pad in the cutting path (1101), such as the D position (1117), E position (1118). ) Two locations.
图 11 ( c )是针测垫在使用覆晶封装或晶圆级芯片封装时可能的位置图。在使用覆晶封装时,探针卡可以使用晶粒( 1121 )上的空置焊垫( 1122 )来作为针测垫使用。 Figure 11 (c ) is a possible location map of the pad when using flip chip or wafer level chip packages. When using a flip chip package, the probe card can use a vacant pad on the die (1212) (1122) ) to use as a needle pad.
请参阅图 12 ,图 12 是晶圆上光刻区域内部输入信道结构图和输出电路结构图。其中图 12 ( a )为晶圆上光刻区域内部输入信道结构图,图 12 ( b )为晶圆上光刻区域内被测晶粒输出电路结构图。 Please refer to FIG. 12, which is a structural diagram of an input channel and an output circuit structure of a lithography area on a wafer. Figure 12 ( a) is the input channel structure diagram inside the lithography area on the wafer, and Figure 12 (b) is the structure diagram of the measured crystal output circuit in the lithography area on the wafer.
如图 12 ( a )所示,测试激励经由针测卡( 1201 )并通过晶圆上切割道上的连线(如连线( 1202 ))分别传输到该光刻区域( 1206 )内的各个被测晶粒(如被测晶粒( 1203 )),其中切割道上的连线在版图阶段已经确定,且在整个测试阶段不可更改,各被测晶粒运行测试激励,产生运行结果,经比较装置相互比较或者与预期结果比较后形成比较 / 判定结果。 As shown in Figure 12 (a), the test stimulus is passed through the pin test card (1201) and through the wire on the scribe line on the wafer (such as a wire ( 1202)) respectively transferred to the measured die in the lithography area (1206) (such as the measured die (1203) )), where the connection on the scribe line has been determined at the layout stage and cannot be changed throughout the test phase. Each tested granule runs a test stimulus, produces a running result, is compared with the comparison device or compared with the expected result. judgement result.
如图 12 ( b )所示,在该光刻区域( 1206 )内,各被测晶粒的比较 / 判定结果由以移位寄存器与硬连线构成的输出电路( 1204 )连接起来,并通过输出电路经针测卡( 1201 )输出到外部设备,这里的输出电路在版图阶段已经确定,且在整个测试阶段不可更改。 As shown in Figure 12 (b), in the lithography area (1206), the comparison of the measured crystal grains / The result of the determination is connected by an output circuit (1204) composed of a shift register and a hard line, and is passed through a pin test card through the output circuit (1201). ) Output to an external device, where the output circuit is determined during the layout phase and cannot be changed throughout the test phase.
图 13 是本发明针对晶粒相互比较时电路连线配置的实施例,图 13 ( a )是该实施例的顶视图,图 13 ( b )显示其中三个晶粒间的连接细节。针测卡( 1316 )的探针落在一个晶粒( 1311 )上,传入的输入激励可通过有线互联电路( 1302 )传输到晶粒( 1310 )、晶粒( 1312 )的相应输入焊垫上。有线互联电路( 1302 )由众多基本传输单元( 1303 )组成。基本传输单元( 1303 )通过双向开关( 1304 )保证信号可以从左边(右边)传到右边(左边),或从上边(下边)传到下边(上边),双向开关由配置网络作配置,从而使针测卡( 1316 )在任一晶粒的输入激励都可传输到所有晶粒。传输输入激励时,双向开关( 1304 )为单向导通,作为输出比较时,双向开关( 1304 )均断开。双向开关( 1304 )为单向导通时,其导通方向可以由配置内存( 1308 )决定,也可以由被测单元输入 / 输出控制焊垫( 1309 )与配置内存( 1308 )共同决定。基本传输单元( 1303 )的驱动器( driver )( 1305 )使信号传输不产生衰减。如果衰减不大,有线互联电路也可以没有驱动器( 1305 )。如果需要也可以在有线互联电路上加锁存器,按流水线方式传输信号。在比较阶段,双向开关( 1304 )配置为均断开,焊垫( 1301 )作为输出焊垫将晶粒运行结果传出,此时比较器( 1306 )工作。上述实施例中焊垫( 1301 )是输入 / 输出焊垫,单独的输入焊垫或输出焊垫的连接方法是此实施例的子集。 FIG. 13 is an embodiment of the present invention for a circuit connection configuration when the crystal grains are compared with each other, FIG. 13 (a) It is a top view of this embodiment, and Figure 13 (b) shows the connection details among the three crystal grains. The probe of the pin test card ( 1316 ) falls on a die ( 1311 The incoming input stimulus can be transmitted to the corresponding input pads of the die (1310), die (1312) through the wired interconnect circuit (1302). Wired interconnection circuit (1302 ) consists of a number of basic transmission units ( 1303 ). Basic transmission unit (1303) through bidirectional switch (1304) The guaranteed signal can be transmitted from the left (right) to the right (left), or from the upper (lower) to the lower (top), and the bidirectional switch is configured by the configuration network, so that the pin test card (1316) The input excitation at any of the dies can be transmitted to all dies. When the input excitation is transmitted, the bidirectional switch (1304) is unidirectional, and when the output is compared, the bidirectional switch (1304) is turned off. Bidirectional switch 1304) When it is a single-conduction, its conduction direction can be determined by the configuration memory (1308), or it can be controlled by the unit under test/output control pad (1309) and configuration memory (1308). )decided together. The driver (1305) of the basic transmission unit (1303) does not cause attenuation of signal transmission. If the attenuation is not large, the wired interconnect circuit can also have no driver ( 1305). If necessary, a latch can be added to the wired interconnect circuit to transmit the signal in a pipelined manner. In the comparison phase, the bidirectional switch (1304) is configured to be disconnected, the pad (1301) The output of the die is transmitted as an output pad, at which point the comparator (1306) operates. In the above embodiment, the pad (1301) is input / The output pad, the separate input pad or the output pad connection method is a subset of this embodiment.
图 14 是本发明针对配置方法的实施例。有线互联电路与输出电路具有不同的拓扑结构,输入激励是要求从探针落点向四方以最短路径传输,输出电路要串行经过每一个待测单元。在每一个节点上,有线互联电路与输出电路传递方向并不一定一致。本实施例的目的是用串行配置的方式同时建立一条把所有待测单元的比较 / 判定结果串行输出到探针所在的被测单元以及配置从探针所在的被测单元向四方传输输入激励的有线互联电路。所采取的方式是以逐点配置逐点传递的方式从探头所在位置建立经过每一个待测单元的链,这条链的逆向就是真实的比较 / 判定结果传递方向,在建立这条链的同时,也配置了有线互联电路的传输方向。通过这条链传递的每个节点的配置信息包括:有线互联电路结构配置信息、输出电路结构配置信息。具体做法是将从探针位置( 1401 )来的配置信息及时钟( 1427 )通过网络( 1402 )串行传输到所有节点,如图 14 ( a )所示。对于节点( 1408 )来说,时钟信号和节点配置信息( 1427 )从上面传来,配置该节点( 1408 )上激励信号的传输方向的配置内存( 1308 )以及控制输出电路输出方向的导出方向配置寄存器( 1407 )。导出方向配置寄存器( 1407 )指示向右建比较 / 判定结果输出电路(包括顺向的时钟传递、顺向的配置信息传递及逆向的比较 / 判定结果传递通道)。配置内存( 1308 )指示向下传递输入激励( 1414 )。对于节点( 1403 )来说,时钟信号和节点配置信息从左边节点( 1408 )到达本节点( 1403 ),配置该节点( 1403 )上激励信号的传输方向的配置内存( 1308 )以及控制比较 / 判定结果导出方向配置寄存器( 1407 )。导出方向配置寄存器( 1407 )指示继续向右建比较 / 判定结果输出电路(包括顺向的时钟传递、顺向的配置信息传递及逆向的比较 / 判定结果传递通道)。配置内存( 1308 )指示向下传递输入激励( 1404 )。对于节点( 1406 )来说,时钟信号和节点配置信息从左边节点( 1403 )到达本节点( 1406 ),配置该节点( 1406 )上激励信号的传输方向的配置内存( 1308 )以及控制比较 / 判定结果导出方向配置寄存器( 1407 )。导出方向配置寄存器( 1407 )指示继续向右建比较 / 判定结果输出电路(包括顺向的时钟传递、顺向的配置信息传递及逆向的比较 / 判定结果传递通道)。配置内存( 1308 )指示向下传递输入激励( 1488 )。每个节点一次配置后,配置内存( 1308 )及导出方向配置寄存器( 1407 )不因后续通过该节点的配置信息改变。但在断电及外部送入复位信号时,全部置为初始值。如此通过节点配置信息和时钟传输路径( 1427 )、节点配置信息和时钟传输路径( 1415 )、节点配置信息和时钟传输路径( 1405 )、节点配置信息和时钟传输路径( 1420 )依次传递所有节点配置信息与时钟,按需求传输到需要的链路节点。通过比较 / 判定结果传输路径( 1429 )、比较 / 判定结果传输路径( 1430 )、比较 / 判定结果传输路径( 1431 )等建立逆向的比较 / 判定结果输出电路,将所有比较特征输出,输入激励的传输方向配置也在建立输出电路的同时配置完成。图 14 ( b )是节点( 1408 )、节点( 1403 )、节点( 1406 )的连接示意图。 Figure 14 It is an embodiment of the present invention directed to a configuration method. The wired interconnect circuit and the output circuit have different topologies. The input excitation requires transmission from the probe drop point to the four sides in the shortest path, and the output circuit is serially passed through each unit to be tested. At each node, the wired interconnect circuit and the output circuit do not necessarily have the same direction of transmission. The purpose of this embodiment is to establish a comparison of all the units to be tested simultaneously by serial configuration. / The determination result is serially outputted to the unit under test where the probe is located, and the wired interconnection circuit that configures the input excitation from the unit under test to which the probe is located. The method adopted is to establish a chain passing through each unit to be tested from the position of the probe in a point-by-point configuration by point-by-point transmission. The reverse of this chain is a true comparison. / Judging the direction of the result transmission, while establishing this chain, the transmission direction of the wired interconnection circuit is also configured. The configuration information of each node transmitted through the chain includes: wired interconnect circuit structure configuration information and output circuit structure configuration information. The specific approach is to take the probe position ( 1401) The configuration information and clock (1427) are serially transmitted to all nodes through the network (1402), as shown in Figure 14 (a). For nodes ( 1408 For example, the clock signal and node configuration information (1427) are transmitted from above, and the configuration memory of the transmission direction of the excitation signal on the node (1408) is configured (1308). And a derivation direction configuration register (1407) that controls the output direction of the output circuit. The Export Direction Configuration Register ( 1407 ) indicates a comparison to the right / The decision result output circuit (including forward clock transfer, forward configuration information transfer, and reverse comparison / decision result transfer channel). The configuration memory ( 1308 ) indicates that the input stimulus is passed down ( 1414 ) ). For the node (1403), the clock signal and node configuration information arrives at the node (1403) from the left node (1408), and the node is configured (1403). The configuration memory (1308) of the transmission direction of the excitation signal and the control comparison/decision result derivation direction configuration register (1407). Export Direction Configuration Register ( 1407 ) Instructs to continue to build a comparison/decision result output circuit to the right (including forward clock transfer, forward configuration information transfer, and reverse comparison / decision result transfer channel). Configuring memory ( 1308 ) indicates that the input stimulus is passed down (1404). For the node (1406), the clock signal and node configuration information arrives at the node (1406) from the left node (1403), and the node is configured ( 1406) The configuration memory (1308) of the transmission direction of the excitation signal and the control comparison/decision result derivation direction configuration register (1407). Export Direction Configuration Register ( 1407 ) Instructs to continue to build a comparison/decision result output circuit to the right (including forward clock transfer, forward configuration information transfer, and reverse comparison / decision result transfer channel). Configuring memory ( 1308 ) indicates that the input stimulus is passed down (1488). After each node is configured, configure memory (1308) and export direction configuration register (1407) ) does not change due to subsequent configuration information passing through the node. However, when the power is turned off and the reset signal is externally supplied, all are set to the initial values. So through the node configuration information and clock transmission path ( 1427 ), node configuration information and clock transmission path ( 1415 ), node configuration information and clock transmission path ( 1405 ), node configuration information, and clock transmission path ( 1420 ) ) Pass all node configuration information and clocks in turn, and transfer them to the required link nodes as needed. By comparing/determining the result transmission path (1429), comparing/determining the result transmission path (1430), comparing / The decision result transmission path (1431) establishes a reverse comparison/decision result output circuit, and outputs all the comparison features, and the transmission direction configuration of the input excitation is also completed while the output circuit is established. Figure 14 (b) is a connection diagram of a node (1408), a node (1403), and a node (1406).
图 15 ( a )是一晶圆测试输入通道示意图,该图是一种顶视图;针测卡( 1501 )通过待测晶圆( 1502 )上的输入通道( 1503 )把激励传输给各个晶粒( 1504 ),其中输入信道( 1503 )可以作配置来选择激励传输路径。使用这种结构,针测卡( 1501 )不需要移动就可以完成测试激励的传递,节省测试时间;也可以通过配置,选择部分区域传输激励,作分区域测试。 Figure 15 (a) is a schematic diagram of a wafer test input channel, which is a top view; pin test card (1501) The excitation is transmitted to each die (1504) through the input channel (1503) on the wafer to be tested (1502), where the input channel (1503) ) can be configured to select the excitation transmission path. Using this structure, the needle card (1501 The test excitation can be transmitted without moving, saving test time; it can also be configured to select partial region transmission stimulus for sub-regional testing.
图 15 ( b )是一晶圆比较 / 判定结果输出电路示意图,该图也系一种顶视图;被测晶圆( 1502 )上有一条比较 / 判定结果输出电路( 1505 ),该输出电路连接所有的待测晶粒( 1504 )的特征寄存器;所有的特征寄存器组成一个移位寄存器,其比较 / 判定结果可以通过该移位寄存器串行移位读出,不需要移动针测卡( 1501 )就可以读出所有的比较 / 判定结果。也可以通过配置只导出部分区域的比较 / 判定结果。比较 / 判定结果输出电路( 1505 )可以在建立完成后先作一遍预测试,以保证所示的输入通道和比较 / 判定结果输出电路本身的正确性,其输入可以从针测卡( 1501 )通过节点( 1506 )传入,经过比较 / 判定结果输出电路后,再通过针测卡( 1501 )从节点( 1507 )读出,两者相互比较,相等 / 匹配则表示通过预测试,否则,则未通过预测试。如果未通过预测试,则可以移动针测卡( 1501 )从另一个被测单元重新建立输入信道和比较 / 判定结果输出电路,并重复所述自检测。在自测试模式下,先通过输入通道将自测试用的激励传输到每个被测单元,再通过比较 / 判定结果输出电路将上述自测试用的激励串行导出。 Figure 15 (b) is a schematic diagram of a wafer comparison/decision result output circuit, which is also a top view; the wafer to be tested ( 1502) There is a comparison/decision result output circuit (1505) that connects all the die to be tested (1504) Characteristic register; all the characteristic registers form a shift register, and the comparison/decision result can be read by serial shifting of the shift register, and all comparisons can be read without moving the pin test card (1501). / judgement result. It is also possible to configure only the comparison/judgment results of partial areas. Comparison / decision result output circuit (1505 The pre-test can be done once after the establishment is completed to ensure the correctness of the input channel and the comparison/decision output circuit itself. The input can be passed from the pin test card (1501) to the node (1506). ), after passing through the comparison/decision result output circuit, it is read from the node (1507) through the pin test card (1501), and the two are compared with each other, equal / A match means that the pretest is passed, otherwise, the pretest is not passed. If the pretest is not passed, you can move the card (1501) to re-establish the input channel and compare from another unit under test / The result output circuit is determined and the self-test is repeated. In the self-test mode, the self-test excitation is transmitted to each unit under test through the input channel, and then by comparison / The determination result output circuit serially derives the excitation for self-test described above.
图 15 ( a )和图 15 ( b )使用了图 14 中建立的输入通道和比较 / 判定结果输出电路。 Figure 15 (a) and Figure 15 (b) use the input channels and comparisons established in Figure 14 / The result output circuit is determined.
图 16 是一种具有大电源界面的晶圆示意图;在一块晶圆( 1601 )上除了拥有一般的晶粒( 1602 )外,还可以有几个大电源接口( 1603 ),该接口( 1603 )通过硬连线连接周围一般晶粒的电源。由于其可以通过较大的电源,可以同时供给一个区域内的多个晶粒使用,并使得晶粒可以在较高的频率下作测试。这需要配合专用的可以通过大电源的探头使用。 Figure 16 is a schematic diagram of a wafer with a large power interface; in addition to having a common die on a wafer (1601) ( 1602), there are also several large power interfaces (1603), which are available (1603) ) A hard-wired connection to the power supply of the surrounding die. Since it can pass through a large power source, it can simultaneously supply multiple dies in one area and allow the dies to be tested at higher frequencies. This requires a dedicated probe that can be used with a large power supply.
图 17 是射频晶粒的晶圆测试示意图。如图所示,在作射频晶粒的晶圆测试时,针测卡( 1703 )对晶圆( 1701 )上每个被测晶粒(如晶粒( 1702 ))的天线输入焊垫都有一个相应的接收天线或耦合器(如接收天线及耦合器( 1704 )),以电磁波传输的方式经天线对相应的被测射频晶粒(如被测射频晶粒( 1702 ))输入测试激励与供电,各被测射频晶粒(如被测射频晶粒( 1702 ))运行测试激励,将运行结果通过晶圆( 1701 )上的联连线传输到相应的比较装置,通过各被测晶粒(如被测射频晶粒( 1702 )运行结果的相互比较或者与预期结果作比较后得出比较 / 判定结果,比较 / 判定结果通过针测卡( 1703 )上的输出探针传输到特征标记装置,从而实现射频晶粒的晶圆测试。测试激励与供电可以采取分区的方式传递给被测晶粒。对于已经包含了天线的晶粒,则可以直接以电磁波传输的方式输入测试激励及供电。 Figure 17 is a schematic diagram of wafer testing of RF dies. As shown in the figure, when testing the wafer for RF die, the pin test card (1703) An antenna input pad for each die (eg, die (1702)) on the wafer (1701) has a corresponding receive antenna or coupler (eg, receive antenna and coupler (1704) )), by means of electromagnetic wave transmission through the antenna to the corresponding measured RF die (such as the measured RF die (1702)) input test excitation and power supply, each measured RF die (such as the measured RF die (1702) )) Run the test stimulus and transfer the results to the corresponding comparator through the connection on the wafer (1701) through each measured die (eg, the measured RF die (1702) ) Comparison of the results of the operation or comparison with the expected results to obtain a comparison / determination result, comparison / determination results through the needle test card (1703) The output probe on the ) is transmitted to the signature device to enable wafer testing of the RF die. Test excitation and power supply can be transmitted to the measured die in a partitioned manner. For the die that already contains the antenna, the test excitation and power supply can be directly input in the form of electromagnetic wave transmission.
图 18 是自测试晶圆示意图,如图所示,该晶圆( 1803 )上集成了测试激励产生装置( 1801 ),其产生的测试激励通过联连线传输到各个被测晶粒(如被测晶粒( 1802 )),且各被测晶粒(如被测晶粒( 1802 ))的输出端口也通过连线连接到晶圆( 1803 )上相应的比较装置上,整个晶圆( 1803 )上已经形成了完整的测试环境,在通电的情况下,整个晶圆( 1803 )不需要外部测试机台的参与就可以独立完成所有晶粒的测试,并将比较 / 判定结果通过针测卡上的输出探针输出到特征标记装置。在该实施例中,测试激励产生装置( 1801 )也可以集成在晶圆( 1803 )上的切割道( 1804 )内,而不占用晶粒位置。 Figure 18 is a schematic diagram of the self-test wafer. As shown in the figure, the test excitation generator (1801) is integrated on the wafer (1803). ), the test excitation generated by the connection is transmitted to each measured die (such as the measured die (1802)) through the connection, and the output port of each measured die (such as the measured die (1802)) also passes. Wired to the wafer ( 1803) On the corresponding comparison device, a complete test environment has been formed on the entire wafer (1803), and in the case of power-on, the entire wafer (1803) All wafers can be tested independently without the involvement of an external test machine, and the comparison/decision results are output to the signature device via the output probe on the card. In this embodiment, the test excitation generating device ( 1801 ) can also be integrated into the scribe line ( 1804 ) on the wafer ( 1803 ) without occupying the die position.
图 19 是一种新型晶圆测试系统图;在该结构中包含一测试器( 1901 ),一专用测试装置( 1902 ),两者通过电缆( 1903 )连接,可对晶圆测试机台( 1904 )上的被测晶圆( 1905 )作测试。该专用测试装置( 1902 )能提供大电源,该专用测试装置( 1902 )上的探针( 1906 )可以与被测晶圆( 1905 )上所有晶粒的电源 / 地接触,实现对被测晶圆( 1905 )全晶圆或部分晶圆区域供电。可通过专用测试装置( 1902 )把测试器( 1901 )所产生的激励并行传递给多个被测单元,驱动被测晶圆( 1905 )上全部或部分被测晶粒,各晶粒同时高速运行输入激励;比较 / 判定结果将通过专用测试装置( 1902 )与电缆( 1903 )导出到测试器( 1901 )中,若测试结果为比较结果,则测试器( 1901 )将根据输出的比较结果判定疑似失效单元。该系统还能根据运行结果对疑似失效单元单独测试,并具有标记失效单元的功能。 Figure 19 is a diagram of a new wafer test system; the structure includes a tester (1901), a dedicated test device ( 1902), the two are connected by a cable (1903) to test the wafer under test (1905) on the wafer testing machine (1904). This special test device ( 1902 A large power supply can be provided. The probe (1906) on the dedicated test device (1902) can be in contact with the power/ground of all the dies on the tested wafer (1905) to realize the wafer to be tested (1905). Power is supplied to the full wafer or part of the wafer area. The excitation generated by the tester (1901) can be transmitted to the plurality of units to be tested in parallel through a dedicated test device (1902) to drive the wafer to be tested (1905) ) All or part of the measured die, each die simultaneously runs the input excitation at high speed; the comparison / determination result will be exported to the tester ( 1901 ) through the dedicated test device ( 1902 ) and the cable ( 1903 ) In the test, if the test result is a comparison result, the tester (1901) The suspected failed unit will be determined based on the comparison result of the output. The system can also test the suspected failure unit separately according to the operation result, and has the function of marking the failure unit.
图 20 是多运算单元 / 多核集成电路芯片内部测试结构图,如图所示,在该多运算单元 / 多核集成电路芯片( 2011 )内部,测试激励生成器( 2001 )产生测试激励,并传输到各个被测单元(如被测单元( 2002 )、被测单元( 2004 )、被测单元( 2007 )、被测单元( 2009 )),这里被测单元为多运算单元 / 多核集成电路芯片内部的运算单元或者处理器核。各被测单元(如被测单元( 2002 )、被测单元( 2004 )、被测单元( 2007 )、被测单元( 2009 ))运行测试激励,运行结果传输到相应的比较器(如比较器( 2003 )、比较器( 2005 )、比较器( 2006 )、比较器( 2008 ))作相互比较得出比较 / 判定结果,测试结果写入特征寄存器( 2010 ),从而实现芯片内部多运算单元 / 多核的测试。在该实施例中,各个被测单元(如被测单元( 2002 )、被测单元( 2004 )、被测单元( 2007 )、被测单元( 2009 ))的运行结果之间通过相互比较作测试,在具体实施中,也可以通过被测单元的运行结果和预期结果比较来作测试。 Figure 20 is a diagram showing the internal test structure of a multi-operation unit/multi-core integrated circuit chip, as shown in the figure, in the multi-operation unit / Inside the multi-core integrated circuit chip (2011), the test excitation generator (2001) generates test excitations and transmits them to each unit under test (such as the unit under test (2002), the unit under test (2004). ), the unit under test (2007), the unit under test (2009), where the unit under test is an arithmetic unit or processor core inside the multi-operation unit/multi-core integrated circuit chip. Each unit under test (such as the unit under test ( 2002), the unit under test (2004), the unit under test (2007), the unit under test (2009) run the test stimulus, and the operation result is transmitted to the corresponding comparator (such as the comparator (2003). ), comparator (2005), comparator (2006), comparator (2008) are compared with each other to obtain comparison/judgment results, and the test results are written into the feature register (2010) ), thus enabling the implementation of multiple arithmetic unit/multicore in the chip. In this embodiment, each unit to be tested (such as the unit under test (2002), the unit under test (2004), the unit under test (2007) The test results of the unit under test (2009) are tested by mutual comparison. In the specific implementation, the test results of the unit under test can also be compared with the expected results.
图 21 是晶粒输出到比较器的连线方式示意图。比较器( 2103 )、比较器( 2104 )位于切割道可能被切割区域( 2107 )、切割区域( 2109 )内,晶粒( 2101 )、晶粒( 2102 )的输出焊垫( 2110 )、输出焊垫( 2108 )与比较器( 2103 )、比较器( 2104 )之间的连线都必须经过切割道确定被切断区域( 2105 ),以保证比较器只在芯片测试时能够工作,芯片切割完成后晶粒的输出焊垫与比较器间的连线全部被切断,比较器不对输出焊垫产生负载作用。 Figure 21 is a schematic diagram of the wiring pattern of the die output to the comparator. Comparator ( 2103 ), comparator ( 2104 ) The output pad (2110) of the die (2101), the die (2102), and the output pad (in the cutting area (2107), the cutting area (2109)) 2108) The connection between the comparator (2103) and the comparator (2104) must pass through the cutting path to determine the cut-off area (2105) ), to ensure that the comparator can only work when the chip is tested. After the chip is cut, the connection between the output pad and the comparator of the die is completely cut off, and the comparator does not load the output pad.
图 22 是利用其它晶圆对被测晶圆上晶粒测试的四个实施例。在第一个实施例中,图 22 ( a )中测试晶圆( 2201 )作为测试系统的组成部分覆盖在晶圆( 2202 )上方以作测试。在本实施例中,测试晶圆( 2201 )被划分为与被测晶圆( 2202 )相同的结构,在图 22 ( b )中,测试晶圆( 2201 )上与被测晶圆( 2202 )晶粒对应的位置( 2204 )用于放置锡球( 2205 )以便将测试用电源 / 测试激励传输到被测晶粒,测试晶圆( 2201 )边角上的空余位置( 2203 )用于连接测试电缆( 2206 )。图 22 ( c )是本实施例的剖面图,测试晶圆( 2201 )上的锡球( 2205 )与被测晶圆( 2202 )上的焊垫一一对应,压平装置( 2210 )压在测试晶圆( 2201 )上,使两晶圆的焊垫和锡球紧紧接触。利用焊垫和锡球相压形成的两晶圆之间的间隙,测试电缆( 2206 )可以通过固定件( 2208 )直接连接到测试晶圆( 2201 )边角上的空余位置( 2203 )。测试时测试用电源 / 测试激励通过固定件( 2208 )经测试电缆( 2206 )传输到测试晶圆( 2201 ),通过测试晶圆( 2201 )上的锡球( 2205 )传输到被测晶圆( 2202 )上的每个晶粒的相应焊垫,作为测试的输入。测试激励的执行结果可以在被测晶圆上比较,也可以传输回测试晶圆,利用测试晶圆上的比较器比较。 Figure 22 is a four embodiment of wafer testing on a wafer under test using other wafers. In the first embodiment, Figure 22 (a The mid-test wafer (2201) is overlaid on the wafer (2202) as part of the test system for testing. In this embodiment, the test wafer (2201) is divided into the wafer to be tested (2202). The same structure, in Figure 22 (b), the position on the test wafer (2201) corresponding to the die of the wafer under test (2202) (2204) is used to place the solder ball (2205) In order to transfer the test power/test excitation to the die to be tested, the vacant position (2203) on the corner of the test wafer (2201) is used to connect the test cable (2206). Figure 22 (c Is a cross-sectional view of the embodiment, the solder balls (2205) on the test wafer (2201) correspond one-to-one with the pads on the wafer under test (2202), and the flattening device (2210) is pressed against the test wafer ( 2201), so that the pads of the two wafers and the solder balls are in tight contact. The test cable (2206) can pass through the fixture (2208) by using a gap between the two wafers formed by the pad and the ball phase. ) Connect directly to the vacant position ( 2203 ) on the corner of the test wafer ( 2201 ). Test test power supply / test excitation through the fixture ( 2208 ) through the test cable ( 2206 Transfer to the test wafer (2201) and transfer it to the wafer under test (2202) through the solder ball (2205) on the test wafer (2201) Corresponding pads for each die on the substrate as an input to the test. The results of the test stimulus can be compared on the wafer under test or transmitted back to the test wafer and compared using a comparator on the test wafer.
图 22 ( d )是第二个实施例。测试晶圆( 2211 )是比被测晶圆( 2202 )大的晶圆,测试电缆( 2206 )可以通过固定件( 2208 )直接连接到测试晶圆( 2211 )伸出被测晶圆( 2202 )的部分,这样可以解决图 22 ( c )中测试电缆( 2206 )不能太粗的问题。在本实施例中,测试时测试用电源 / 测试激励经测试电缆传输到测试晶圆( 2211 ),通过测试晶圆( 2211 )上的锡球( 2212 )传输到被测晶圆( 2202 )上的每个晶粒的相应焊垫,作为测试的输入。测试激励的执行结果可以在被测晶圆上比较,也可以传输回测试晶圆,利用测试晶圆上的比较器比较。 Figure 22 (d) is the second embodiment. Test wafer (2211) is better than the wafer under test (2202) Large wafer, test cable (2206) can be directly connected to the test wafer (2211) through the fixture (2208) to extend the portion of the wafer under test (2202), which can solve Figure 22. (c) The test cable (2206) should not be too thick. In this embodiment, the test power/test excitation is transmitted to the test wafer (2211) through the test cable during the test, and the test wafer is passed ( 2211) The solder ball (2212) is transferred to the wafer under test (2202) Corresponding pads for each die on the substrate as an input to the test. The results of the test stimulus can be compared on the wafer under test or transmitted back to the test wafer and compared using a comparator on the test wafer.
图 22 ( e )是第三个实施例,在本实施例中,被测晶圆( 2215 )与测试晶圆( 2211 )原本大小相同,但被测晶圆( 2215 )被切去一边,测试晶圆( 2211 )是完整的晶圆,测试时测试用电源 / 测试激励经测试电缆传输到测试晶圆( 2211 ),通过测试晶圆( 2211 )上的锡球( 2212 )传输到被测晶圆( 2215 )上的每个晶粒的相应焊垫,作为测试的输入。测试激励的执行结果可以在被测晶圆上比较,也可以传输回测试晶圆,利用测试晶圆上的比较器比较。本实施例中被测晶圆( 2215 )只被切去一边,但在实际应用中,可以根据不同需要切去多边。 Figure 22 (e) is a third embodiment. In this embodiment, the wafer to be tested (2215) and the test wafer (2211) The original size is the same, but the wafer under test (2215) is cut off, the test wafer (2211) is a complete wafer, and the test power/test excitation is transmitted to the test wafer via the test cable (2211) ), through the solder ball (2212) on the test wafer (2211) transferred to the wafer under test (2215) Corresponding pads for each die on the substrate as an input to the test. The results of the test stimulus can be compared on the wafer under test or transmitted back to the test wafer and compared using a comparator on the test wafer. The wafer to be tested in this embodiment ( 2215) It is only cut off one side, but in practical applications, the multilateral can be cut according to different needs.
图 22 ( f )是第四个实施例,测试晶圆( 2214 )是带有硅通孔 (TSV) 的晶圆。在本实施例中,测试电缆( 2216 )不需要直接连接到测试晶圆( 2214 )的正面,而是连接到测试晶圆( 2214 )的背面,通过 TSV 通孔将测试用电源 / 测试激励传输到被测晶圆( 2202 )。为更清楚地阐明本实施例的技术思路,图中压平装置和固定件被省略。 Figure 22 (f) is a fourth embodiment, the test wafer (2214) is with through silicon vias (TSV) Wafer. In this embodiment, the test cable (2216) does not need to be directly connected to the front side of the test wafer (2214), but is connected to the back side of the test wafer (2214) through the TSV. The via transmits the test power/test stimulus to the wafer under test (2202). In order to clarify the technical idea of the embodiment more clearly, the flattening device and the fixing member are omitted.
在实施例 22 ( a )、 22 ( b )、 22 ( c )、 22 ( d )、 22 ( e )、 22 ( f )中,除用测试晶圆上的锡球接触被测晶圆上的焊垫外,还可以用测试晶圆上的焊垫接触被测晶圆上的锡球,及测试晶圆上的锡球接触被测晶圆上的锡球等多种接触方法。 In Examples 22 (a), 22 (b), 22 (c), 22 (d), 22 ( e ), 22 ( f In addition, in addition to the solder balls on the test wafer contacting the pads on the test wafer, the solder pads on the test wafer can be used to contact the solder balls on the wafer under test, and the tin on the wafer can be tested. The ball contacts various soldering methods such as solder balls on the wafer to be tested.
图 23 是对被测晶粒作 DC 测试的实施例。在本实施例中,被测晶粒( 2301 )的一个焊垫 / 锡球( 2302 )上接有一电流源( 2303 ),测试时,该电流源( 2303 )通过焊垫 / 锡球( 2302 )给予被测晶粒( 2301 )一定量的电源,此时焊垫 / 锡球( 2302 )对应于地( GND )产生一电势差,通过一模拟数字转换装置( 2304 )即可知焊垫 / 锡球( 2302 )上电压值。将此电压值与基准直流特性电压值比较,即可判定该直流特性值是否满足要求。 Figure 23 is an example of DC testing of the measured die. In this embodiment, a pad of the die (2301) is tested / A current source (2303) is connected to the solder ball (2302). When tested, the current source (2303) is applied to the measured die through the pad/tin ball (2302) (2301). A certain amount of power supply, at this time the pad / solder ball ( 2302 ) generates a potential difference corresponding to the ground ( GND ), and the solder pad / solder ball can be known through an analog to digital conversion device ( 2304 ) ( 2302 ) ) The voltage value. By comparing this voltage value with the reference DC characteristic voltage value, it can be determined whether the DC characteristic value satisfies the requirement.
图 24 是对互补式金属氧化层半导体( CMOS )图像传感器测试的实施例。本实施例中,晶圆( 2401 )上的晶粒是 CMOS 图像传感器。有一发光装置( 2404 )能向晶圆( 2401 )上部分乃至全部 CMOS 图像传感器发出不同亮度和色度的光。专用针测卡( 2403 )的探针( 2405 )不挡住发光装置( 2404 )发出的光,并与晶圆( 2401 )上的一个 CMOS 图像传感器的的相应焊垫接触。通过并行比较不同 CMOS 图像传感器接受到的亮度和色度值,或将 CMOS 图像传感器接受到的亮度和色度值并行与基准值比较,并将判定结果经输出电路从探针( 2405 )传回专用针测卡( 2403 ),即可实现在共用基底上对大量 CMOS 图像传感器的并行比较。  Figure 24 is an embodiment of a test for a complementary metal oxide semiconductor (CMOS) image sensor. In this embodiment, the wafer ( The die on 2401) is a CMOS image sensor. A light-emitting device (2404) can be applied to the wafer (2401) to some or all of the CMOS The image sensor emits light of different brightness and chromaticity. The probe (2405) of the dedicated pin test card (2403) does not block the light emitted by the light-emitting device (2404) and is associated with one of the wafers (2401) Corresponding pad contacts for CMOS image sensors. Compare the brightness and chrominance values received by different CMOS image sensors in parallel, or by CMOS The brightness and chrominance values received by the image sensor are compared with the reference value in parallel, and the determination result is transmitted from the probe (2405) to the dedicated pin test card (2403) through the output circuit, so that a large number of pairs can be realized on the shared substrate. Parallel comparison of CMOS image sensors.
图 25 是一种能在额定电压下提供够指定数量被测单元测试用的足够电源的晶圆测试机台的实施例。电源提供装置( 2501 )能提供够全部被测晶粒同时测试用的电源。测试时,测试主机( 2502 )中的测试激励和电源提供装置( 2501 )提供的电源从测试接口( 2503 )经探针( 2505 )并行传输到被测晶圆( 2504 )中的全部被测晶粒,实现全部被测晶粒的同时测试。在本实施例中,测试接口( 2503 )可以用晶圆实现,也可以用电路板实现。  Figure 25 It is an embodiment of a wafer test machine that provides sufficient power for a specified number of units under test at rated voltage. Power supply unit (2501 ) Provides a power supply for testing all of the tested dies at the same time. During testing, the test driver (2502) in the test excitation and power supply (2501) provides power from the test interface (2503) via the probe ( 2505) Parallel transmission to all of the measured dies in the wafer under test ( 2504 ) to achieve simultaneous testing of all measured dies. In this embodiment, the test interface (2503 ) can be implemented in wafers or on boards.
图 26 是利用本发明测试集成电路芯片中功能模块时用于存储判定结果的测试结果表的示意图。判定结果保存在测试结果表( 2601 )中,每一个标号( 2602 )对应系统中一个被测单元,该位置上的信息表示被测单元的状态,其中 '?' 表示对应的被测单元未测, 'X' 表示对应的被测单元失效, '0' 表示对应的被测单元正常。该测试结果表可以在集成电路芯片内,也可以在集成电路芯片外。其存储媒介可以是挥发性的,也可以是非挥发性的;可以是一次写入不再更改的,也可以是可擦除可多次写入的。当与失效功能模块功能相同的有效功能模块有冗余时,失效的功能模块被旁路,用冗余的有效功能模块替代失效功能模块,即可保证系统可以正常运行,提高良率,实现系统的自修复功能。  Figure 26 It is a schematic diagram of a test result table for storing a determination result when the functional module in the integrated circuit chip is tested by the present invention. The judgment result is saved in the test result table (2601), each label (2602) Corresponding to a unit under test in the system, the information at the position indicates the state of the unit under test, where '?' indicates that the corresponding unit under test is not tested, and 'X' indicates that the corresponding unit under test is invalid, '0' Indicates that the corresponding measured unit is normal. The test result table can be in the integrated circuit chip or outside the integrated circuit chip. The storage medium may be volatile or non-volatile; it may be one-time writes that are not changed, or may be erasable and write-once. When the effective function module with the same function as the failed function module has redundancy, the failed function module is bypassed, and the redundant function module is replaced by the redundant effective function module to ensure that the system can operate normally, improve the yield, and realize the system. Self-healing feature.
图 27 是一种与预期结果相比较的测试电路图。测试探针落在切割道中的焊垫( 2703 )或焊垫( 2704 )上,输入的信号为晶粒( 2701 )、晶粒( 2702 )的预期运行结果。预期运行结果通过传输路径( 2705 )传入比较器( 2708 )与比较器( 2709 )中,分别与晶粒( 2701 )的输出( 2713 ),晶粒( 2702 )的输出( 2714 )作比较,比较 / 判定结果存入寄存器( 2711 )、寄存器( 2712 )中。  Figure 27 is a test circuit diagram compared to the expected results. Test pads ( 2703 ) or pads that fall into the scribe line ( 2704), the input signal is the expected operation result of the die (2701) and the die (2702). The expected result is passed to the comparator via the transfer path ( 2705 ) ( 2708 ) And the comparator (2709), compared with the output of the die (2701) (2713), the output of the die (2702) (2714), compare / The result of the judgment is stored in the register (2711) and the register (2712).
图 28 是利用电路板作晶圆测试的剖视图。电路板( 2801 )通过固定件( 2803 )被固定在被测晶圆( 2805 )上方。电路板( 2801 )上拥有多个走线通道( 2807 )。除此之外,电路板( 2801 )上还可以拥有与走线通道( 2807 )相连接的锡球( 2804 ),其位置和被测晶圆( 2805 )的全部焊垫位置相对应,压平装置( 2811 )压在电路板( 2801 )上,使得锡球( 2804 )与焊垫紧紧接触。通过测试电缆( 2813 )就可以把电源、测试激励通过电路板( 2801 )的走线通道( 2807 )和锡球( 2804 )传递给被测晶圆( 2805 ),使得被测晶圆( 2805 )上全部晶粒的所有电源、测试激励都通过电路板( 2801 )上的锡球( 2804 )传入。同时测试设备通过测试电缆( 2813 )及电路板( 2801 )上的走线通道( 2807 )与锡球( 2804 )从被测晶圆( 2805 )上接收测试结果。在本实施例中,电路板( 2801 )上的锡球( 2804 )位置也可以与被测晶圆( 2805 )上的焊垫部分对应,此时,晶粒的部分输入电路板( 2801 )上的锡球( 2804 )传入,部分输入通过被测晶圆( 2805 )上的输入通道从经其它晶粒的焊垫传入。电路板( 2801 )上也可以不包含锡球( 2804 ),而拥有和走线通道( 2807 )相连接的焊垫。此时,被测晶圆( 2805 )上的测试焊垫需要连接相应的锡球,电路板( 2801 )上的焊垫位置和被测晶圆( 2805 )上的锡球位置全部或部分对应。本实施例中测试装置未被画出。  Figure 28 is a cross-sectional view of a wafer test using a circuit board. The board ( 2801 ) is passed through the fixture ( 2803 ) is fixed above the wafer under test ( 2805 ). There are multiple trace channels ( 2807 ) on the board ( 2801 ). In addition, the circuit board ( 2801 ) can also have a trace channel ( 2807) Connected solder balls (2804) whose position corresponds to the position of all pads of the wafer under test (2805), and the flattening device (2811) is pressed on the circuit board (2801) ), so that the solder ball ( 2804 ) is in tight contact with the solder pad. Through the test cable (2813), the power supply, test excitation can be routed through the circuit board (2801) trace channel (2807) and solder balls ( 2804) is passed to the wafer under test (2805), so that all power supplies and test excitations of all the dies on the tested wafer (2805) pass through the solder balls on the circuit board (2801) (2804) ) incoming. At the same time, the test equipment passes the test cable (2813) and the circuit board (2801) on the trace channel (2807) and the solder ball (2804) from the wafer under test (2805). Receive test results on). In this embodiment, the position of the solder ball (2804) on the circuit board (2801) can also be compared with the wafer to be tested (2805). The pad portion on the corresponding portion corresponds to the solder ball (2804) on the input circuit board (2801) of the die, and some of the input passes through the wafer under test (2805) The input channel on the substrate is passed from the pads of other dies. The soldering pad (2804) may not be included on the board (2801), but has a pad connected to the trace channel (2807). At this time, the wafer to be tested ( The test pads on 2805) need to be connected to the corresponding solder balls, the pad position on the board (2801) and the wafer to be tested (2805). The position of the solder ball on the whole corresponds to all or part of it. The test device in this embodiment is not shown.
图 29 ( a )为一种封装后集成电路测试装置实施例。在测试电路板( 2901 )上有复数个被测单元( 2902 ),一块缓冲比较芯片( 2903 ),以及用于与测试机台通信的输入输出接口( 2904 )。被测单元( 2902 )位于电路板的插槽中,其输入端与缓冲比较芯片( 2903 )的缓冲输出端相连;被测单元( 2902 )的输出端与缓冲比较芯片( 2903 )的一组用于比较的输入端相连;缓冲比较芯片( 2903 )的其余输入端与接口( 2904 )相连,用于接收测试激励与预期结果。 Figure 29 (a) shows an embodiment of a packaged integrated circuit test device. On the test board ( 2901 There are a plurality of units to be tested (2902), a buffer comparison chip (2903), and an input/output interface (2904) for communicating with the test machine. Unit under test ( 2902 ) is located in the slot of the circuit board, and its input end is connected to the buffer output end of the buffer comparison chip ( 2903 ); the output end of the unit under test ( 2902 ) is compared with the buffer comparison chip ( 2903 ) A set of inputs for comparison are connected; the remaining inputs of the buffer comparison chip (2903) are connected to the interface (2904) for receiving test excitations and expected results.
缓冲比较芯片( 2903 )包含用于信号驱动的缓冲电路和用于进行比较的比较电路,其中缓冲电路可以对测试激励进行驱动放大,使之能被传输到测试电路板( 2901 )上的复数个被测单元( 2902 ),同时也可以对比较结果进行驱动放大,使之能被送回测试机台。 Buffer comparison chip ( 2903 Included is a buffer circuit for signal driving and a comparison circuit for comparison, wherein the buffer circuit can drive amplify the test excitation so that it can be transmitted to a plurality of units under test on the test board ( 2901 ) ( 2902), the comparison result can also be driven to be amplified so that it can be sent back to the test machine.
测试机台所产生的测试激励可以通过输入输出接口( 2904 )经缓冲比较芯片( 2903 )输入到复数个被测单元( 2902 )进行测试,被测单元( 2902 )的运行结果输入到缓冲比较芯片( 2903 )与测试机台通过接口( 2904 )输入的预期结果进行比较,并把比较结果通过接口( 2904 )传递回测试机台,判定被测单元( 2902 )是否有效。 The test stimulus generated by the test machine can be buffered by the input/output interface (2904) (2903) ) input to a plurality of units under test ( 2902 ) for testing, and the operation result of the unit under test ( 2902 ) is input to the buffer comparison chip ( 2903 ) and the test machine through the interface ( 2904 ) The expected results of the input are compared, and the comparison result is transmitted back to the test machine through the interface (2904) to determine whether the unit under test (2902) is valid.
其中缓冲比较芯片( 2903 )的两组用于比较的输入端可以与不同被测单元( 2902 )的相应输出端相连,利用不同被测单元( 2902 )的输出相互比较,此时不需要测试机台提供预期结果就可以进行被测单元( 2902 )有效与疑似失效的判定。 The two sets of buffer comparison chips (2903) for comparison can be compared with different units to be tested (2902) The corresponding outputs are connected, and the outputs of different units under test (2902) are compared with each other. At this time, the unit to be tested can be performed without the test machine providing the expected result (2902). Effective and suspected failure.
在本实施例中,不同被测单元执行测试激励可以是同时(或并行)实时运行(或执行)的;被测单元运行结果与预期结果或与其他被测单元运行结果的比较可以是同时(或并行)实时运行(或执行)的。 In this embodiment, the test excitation performed by different units under test may be simultaneously (or in parallel) run (or executed) in real time; the comparison between the operation result of the unit under test and the expected result or the result of operation with other units under test may be simultaneous ( Or parallel) run (or execute) in real time.
在本实施例中,如果从测试机台来的测试激励的驱动足够大,那么可以省去对测试激励进行驱动放大的缓冲电路;如果从比较电路来的比较结果的驱动足够大,那么可以省去对比较结果进行驱动放大的缓冲电路。所述比较电路或缓冲电路也可以位于与测试电路板相连接的其他电路板上。 In this embodiment, if the driving of the test excitation from the test machine is sufficiently large, the buffer circuit for driving amplification of the test excitation can be omitted; if the driving result of the comparison from the comparison circuit is sufficiently large, then the operation can be omitted. A buffer circuit that drives the amplification of the comparison result. The comparison circuit or buffer circuit may also be located on other circuit boards connected to the test circuit board.
被测单元( 2902 )的输入激励也可以来自电磁波。 The input excitation of the unit under test ( 2902 ) can also come from electromagnetic waves.
图 29 ( b )为另一种封装后集成电路测试装置实施例。在测试电路板( 2911 )上只有复数个被测单元( 2915 )和电性连接接口( 2912 )。在另一块电路板( 2918 )上含有多个缓冲比较芯片( 2916 )、电性连接接口( 2914 ),以及用于与测试机台通信的输入输出接口( 2919 )。多块测试电路板( 2911 )通过电性连接接口( 2912 )与电路板( 2918 )上电性连接接口( 2914 )相连,组成一套测试装置,其三维效果图如图 29 ( c )所示。测试电路板( 2911 )上的被测单元( 2915 )的输入输出端口与电性连接接口( 2912 )相连。测试机台通过输入输出接口( 2919 ),电性连接接口( 2914 )与电性连接接口( 2912 )向被测单元( 2915 )输入测试激励,通过输入输出接口( 2919 )向缓冲比较芯片( 2916 )输入预期结果。缓冲比较芯片( 2916 )通过电性连接接口( 2914 )与电性连接接口( 2912 )接收被测单元( 2915 )的运行结果与预期结果相比,判定被测单元( 2915 )是否有效。 Figure 29 (b) shows another embodiment of a packaged integrated circuit test device. On the test board ( 2911 There are only a plurality of units under test (2915) and electrical connection interfaces (2912). On the other circuit board ( 2918 ), there are a plurality of buffer comparison chips ( 2916 ) and an electrical connection interface ( 2914), and an input/output interface (2919) for communicating with the test machine. Multiple test boards (2911) through electrical connection interface (2912) and circuit board (2918) The power-on connection interface ( 2914 ) is connected to form a set of test devices, and the three-dimensional effect diagram is shown in Figure 29 (c). Test unit on test board ( 2911 ) ( 2915 The input and output ports are connected to the electrical connection interface (2912). The test machine passes through the input and output interface ( 2919 ), the electrical connection interface ( 2914 ) and the electrical connection interface ( 2912 The test stimulus is input to the unit under test (2915), and the expected result is input to the buffer comparison chip (2916) through the input/output interface (2919). Buffer comparison chip ( 2916 The operation result of the unit under test (2915) is compared with the expected result through the electrical connection interface (2914) and the electrical connection interface (2912), and the unit under test is determined (2915). )is it effective.
其中缓冲比较芯片( 2916 )也可以作不同待测单元( 2915 )相应输出的互相比较,此时不需要测试机台提供预期结果就可以进行被测单元( 2915 )有效与疑似失效的判定。 The buffer comparison chip ( 2916 ) can also be used as a different unit to be tested ( 2915 The corresponding outputs are compared with each other. At this time, it is not necessary for the test machine to provide the expected result, and the determination of the effective and suspected failure of the unit under test (2915) can be performed.
被测单元( 2915 )的输入激励也可以部分或全部来自电磁波。 The input excitation of the unit under test (2915) may also be partially or fully derived from electromagnetic waves.
为清晰起见,以上两个实施例中的测试机台,各部件间的互连未显示。 For the sake of clarity, the test machine in the above two embodiments, the interconnection between the components is not shown.
图 30A-B 和图 31A-B 是采用本发明的测试系统的四个实施例。在图 30A-B 和图 31A-B 的四个实施例中,相同的部件使用相同的编号。对于在一实施例中描述过的部件,其相同部件在其他实施例中不再另外描述。 Figures 30A-B and 31A-B are four embodiments of a test system employing the present invention. In Figure 30A-B and Figure In the four embodiments of 31A-B, the same components use the same reference numerals. For components described in an embodiment, the same components are not otherwise described in other embodiments.
在图 30A-B 和图 31A-B 中仅针对晶圆测试的实施例作了说明,但对于本领域的人来说,这些实施例采用的技术思路同样适用于封装后芯片在电路板上的测试,如图 29 实施例所示,或适用于芯片内部复数个功能单元的测试,如图 20 实施例所示。 In Figures 30A-B and 31A-B Only the embodiment of the wafer test is described, but for those skilled in the art, the technical idea adopted by these embodiments is also applicable to the test of the packaged chip on the circuit board, as shown in FIG. 29 . As shown in the embodiment, or applicable to the test of a plurality of functional units inside the chip, as shown in the embodiment of FIG.
如图 30A-B 和图 31A-B 所示,测试系统 3000 包括晶圆 3009 和与晶圆 3009 相连的测试器 3002 。晶圆 3009 上含有复数个被测晶粒 3001 ,每个晶粒中含有一被制造的功能单元,如加法器、存储器、微处理器、 SOC 、逻辑运算器、实现某种功能的射频电路、 CMOS 传感器等。 As shown in Figures 30A-B and 31A-B, test system 3000 includes wafer 3009 and wafer 3009 Connected tester 3002. The wafer 3009 includes a plurality of measured crystal grains 3001, each of which contains a functional unit to be fabricated, such as an adder, a memory, a microprocessor, and a SOC. , logic operators, RF circuits that implement certain functions, CMOS sensors, etc.
如图 30A-B 和图 31A-B 所示本发明的测试辅助电路包括输入线路 3008 和输出线路 3009 。测试器 3002 通过输入线路 3008 和输出线路 3009 和各个被测晶粒 3001 中的功能单元进行双向通讯。输入线路 3008 与各被测晶粒(或功能单元) 3001 的接入端 3003 相连。晶粒的接出端 3006 与各比较器 3005 的一输入端相连。输入线路 3008 可用于向各被测晶粒 3001 传输测试激励。数字电路测试激励典型地包括操作指令、数据、控制信号、时钟、供电等内容;而模拟电路测试激励典型地包括模拟信号、控制信号与供电等内容。在本发明中,测试激励中还可包括被测晶粒的运行预期结果。  The test auxiliary circuit of the present invention as shown in Figures 30A-B and 31A-B includes an input line 3008 and an output line 3009. Tester 3002 communicates bidirectionally via input line 3008 and output line 3009 with the functional units in each of the tested die 3001. Input line 3008 It is connected to the access terminal 3003 of each measured die (or functional unit) 3001. The die terminal 3006 is connected to an input of each comparator 3005. Input line 3008 Can be used for each measured die 3001 Transfer test incentives. Digital circuit test excitation typically includes operational instructions, data, control signals, clocks, power supplies, and the like; while analog circuit test excitations typically include analog signals, control signals, and power supplies. In the present invention, the test excitation may also include expected results of the operation of the measured die.
在如图 30A 所示本发明的测试辅助电路中,各比较器 3005 的另一输入端和输入线路 3008 相连,用于接收从输入线路 3008 传送来的预期结果。各个寄存器 3004 的输入端与相应比较器 3005 的输出端相连,而各个寄存器 3004 的输出端与输出线路 3009 相连。在测试操作时,位于所述晶圆外的测试器 3002 通过输入线路 3008 ,经各被测晶粒 3001 的接入端 3003 向同一晶圆上的每个被测晶粒 3001 传输测试激励 ( 可以包括各被测晶粒的运行预期结果 ) 。测试器 3002 还通过输入线路 3008 ,将预期结果传输到各比较器 3005 的一个接入端。所述被测晶粒 3001 (或功能单元)按其设计功能可以同时(或并行)实时运行(或执行)测试激励,并从各被测晶粒的输出端 3006 输出运行结果至比较器 3005 的另一个接入端。比较器 3005 对运行结果和预期结果进行比较,被测晶粒 3001 (或功能单元)的比较结果可以同时(或并行)存入与比较器 3005 的输出端相连的相应寄存器 3004 。各个寄存器 3004 中的比较结果均通过输出线路 3009 传输回测试器 3002 ,由测试器 3002 根据各个传回的比较结果判定对应被测晶粒 3001 是否功能正常(即,被测功能单元是正常单元或失效单元)。  In the test auxiliary circuit of the present invention as shown in Fig. 30A, the other input of each comparator 3005 and the input line 3008 Connected to receive the expected result transmitted from input line 3008. The input of each register 3004 is connected to the output of the corresponding comparator 3005, and each register 3004 The output is connected to output line 3009. During the test operation, the tester 3002 located outside the wafer passes through the input line 3008 and passes through the access terminal 3003 of each measured die 3001. A test stimulus is transmitted to each of the measured die 3001 on the same wafer (which may include expected results of operation of each of the measured die). Tester 3002 also passes input line 3008 The expected result is transmitted to one of the access terminals of each comparator 3005. The measured die 3001 (or functional unit) According to its design function, the test excitation can be run (or executed) in real time (or in parallel), and the operation result is output from the output terminal 3006 of each measured die to the comparator 3005. Another access point. The comparator 3005 compares the operation result with the expected result, and the comparison result of the measured die 3001 (or the functional unit) can be simultaneously (or in parallel) stored in the comparator 3005. The corresponding output is connected to the corresponding register 3004. The comparison result in each register 3004 is transmitted back to the tester 3002 through the output line 3009 by the tester 3002. It is determined whether the corresponding measured die 3001 is functioning normally according to the comparison result of each of the returns (that is, the tested functional unit is a normal unit or a failed unit).
在如图 30B 所示本发明的测试辅助电路中,各比较器 3005 的另一输入端不与输入线路 3008 相连,而是与和其一相邻的晶粒的接出端 3006 相连。和该比较器 3005 相连的相应晶粒接出端 3006 与另一相邻晶粒的比较器 3005 的输入端相连,形成晶粒接出端 3006 的链接。在如图 30B 中,其他的线路连接和如图 30A 所示本发明的测试辅助电路相同。在如图 30B 所示本发明的测试辅助电路中,其输入线路 3008 只传输测试激励,不传输预期结果。在测试操作时,位于所述晶圆外的测试器 3002 通过输入线路 3008 ,经各被测晶粒( 3001 、 3013 )的接入端 3003 向同一晶圆上的多个被测晶粒( 3001 、 3013 )传输测试激励。所述被测晶粒可以同时(或并行)实时运行 ( 执行 ) 测试激励,并从各被测晶粒的输出端将运行结果传输至复数个比较器的接入端。以左上角被测晶粒 3013 为例,其输出端 3006 输出的运行结果不但传输到比较器 3015 的接入端,还通过内部连线 3011 传输到其相邻比较器 3014 的接入端,同时参与两个比较器中进行的比较。再以比较器 3015 为例,其一个接入端接收从被测晶粒 3013 输出端 3006 输出的运行结果,另一个接入端接收通过内部连线 3010 传输来的其他被测晶粒的运行结果,对两者进行比较,从而得到比较结果。之后与图 30A 所述实施例相同,被测晶粒(或功能单元)的比较结果可以同时(或并行)存入与比较器的输出端相连的寄存器 3004 。各个寄存器 3004 中的比较结果均通过输出线路 3009 传输回测试器 3002 ,由测试器 3002 根据各个传回的比较结果判定对应被测晶粒( 3001 、 3013 )是否功能正常(即,被测功能单元是正常单元或失效单元)。  In the test auxiliary circuit of the present invention as shown in Fig. 30B, the other input of each comparator 3005 is not connected to the input line 3008. Connected, but connected to the terminal 3006 of an adjacent die. a corresponding die terminal 3006 connected to the comparator 3005 and a comparator 3005 of another adjacent die The inputs are connected to form a link to the die terminal 3006. In Fig. 30B, the other line connections are the same as the test auxiliary circuit of the present invention as shown in Fig. 30A. In Figure 30B In the test auxiliary circuit of the present invention shown, its input line 3008 transmits only test excitations and does not transmit the expected results. At the time of the test operation, the tester 3002 located outside the wafer passes through the input line 3008. , through the access end 3003 of each measured die (3001, 3013) to a plurality of measured crystal grains on the same wafer (3001, 3013) ) Transfer test incentives. The measured die can run (execute) the test excitation in real time (or in parallel) and transmit the operation result from the output of each measured die to the access terminals of the plurality of comparators. Measured grain in the upper left corner For example, in 3013, the output of the output of the output terminal 3006 is transmitted not only to the access terminal of the comparator 3015 but also to the adjacent comparator 3014 via the internal connection 3011. The access side, while participating in the comparison between the two comparators. Taking the comparator 3015 as an example, one of the access terminals receives the output from the measured die 3013. As a result of the output operation, the other access terminal receives the operation results of other measured dies transmitted through the internal connection 3010, and compares the two to obtain a comparison result. After with Figure 30A In the same embodiment, the comparison of the measured die (or functional unit) can be simultaneously (or in parallel) stored in register 3004 connected to the output of the comparator. Individual registers 3004 The comparison results are transmitted back to the tester 3002 through the output line 3009, and the tester 3002 determines the corresponding measured die according to the comparison result of each return (3001, 3013). Whether the function is normal (ie, the functional unit under test is a normal unit or a failed unit).
在如图 31A 所示本发明的测试辅助电路中,在每一被测晶粒上设有传感区 3018 ,该传感区 3018 能将光转变成模拟信号、数字信号或图像信号。这种带有传感区的晶粒可以是 CMOS 传感器晶粒。测试时,通过位于所述晶圆外光源 3102 以光线形式 3019 发送部分测试激励,由各被测晶粒 3101 的传感器 3018 接收。其余测试激励由测试器 3002 通过输入线路 3008 经各被测晶粒 3101 的接入端 3103 向同一晶圆上的复数个被测晶粒( 3101 )传输。在本实施例中,测试器 3002 还通过输入线路 3008 ,将预期结果传输到比较器 3005 的一个接入端。所述被测晶粒可以同时(或并行)实时运行(或执行)测试激励,并从各被测晶粒的输出端 3106 输出运行结果至比较器 3005 的另一个接入端。比较器 3005 对运行结果和预期结果进行比较,被测晶粒(或功能单元)的比较结果可以同时(或并行)存入与比较器 3005 的输出端相连的寄存器 3004 。各个寄存器 3004 中的比较结果均通过输出线路 3009 传输回测试器 3002 ,由测试器 3002 根据各个传回的比较结果判定对应被测晶粒 3101 是否功能正常(即,被测功能单元是正常单元或失效单元)。也可以采用类似图 30B 所示实施例中的方法,对各被测晶粒的运行结果进行相互比较,并将比较结果传输回测试器 3002 ,判定对应被测晶粒 3101 是否功能正常(即,被测功能单元是正常单元或失效单元)。通过图 31A 实施例检测的晶粒,其光转变成模拟信号、数字信号或图像信号的功能通路也得到了检测。  In the test auxiliary circuit of the present invention as shown in Fig. 31A, a sensing area 3018 is provided on each of the measured crystal grains, and the sensing area 3018 It can convert light into an analog signal, a digital signal or an image signal. The die with the sensing region can be a CMOS sensor die. When tested, the light source is located in the out-of-wafer light source 3102 in the form of light 3019 A portion of the test stimulus is sent and received by sensor 3018 of each die 3101 being tested. The remaining test excitations are passed through the tester 3002 through the input line 3008 through the access terminals of each of the tested dies 3101. 3103 transmits to a plurality of measured dies (3101) on the same wafer. In the present embodiment, the tester 3002 also transmits the expected result to the comparator 3005 via the input line 3008. One of the access terminals. The measured die can run (or perform) test excitation in real time (or in parallel) and output the operation result from the output terminal 3106 of each measured die to the comparator 3005. Another access point. The comparator 3005 compares the operation result with the expected result, and the comparison result of the measured die (or functional unit) can be simultaneously (or in parallel) stored in the register connected to the output of the comparator 3005. 3004. The comparison result in each register 3004 is transmitted back to the tester 3002 through the output line 3009, and the tester 3002 determines the corresponding measured die according to the comparison result of each return. Whether the 3101 is functioning properly (that is, the functional unit under test is a normal unit or a failed unit). Can also use a similar figure 30B In the method of the illustrated embodiment, the operating results of the measured dies are compared with each other, and the comparison result is transmitted back to the tester 3002 to determine the corresponding measured die 3101. Whether the function is normal (that is, the functional unit under test is a normal unit or a failed unit). The functional paths of the crystals detected by the embodiment of Fig. 31A, which are converted into analog signals, digital signals or image signals, are also detected.
在如图 31B 所示本发明的测试辅助电路中,在每一被测晶粒上设有收 / 发天线 3017 ,该收 / 发天线 3017 能将磁信号变成模拟信号或、数字信号。这种带有收 / 发天线的晶粒可以是射频标签( RFID )晶粒。在测试操作时,测试器 3002 通过电缆 3021 将部分测试激励传输到接收 / 发射装置 3020 ,通过接收 / 发射装置 3020 的收 / 发天线 3117 进行无线信号发送,由各被测晶粒 3201 的收 / 发天线 3017 接收。其余测试激励由测试器 3002 通过输入线路 3008 经各被测晶粒 3201 的接入端 3203 向同一晶圆上的所有被测晶粒 3201 传输。所述收 / 发天线 3017 可以是用半导体工艺制造在同一晶圆上的,也可以是在测试时临时连接上的。在测试操作中,测试器 3002 还通过输入线路 3008 ,将预期结果传输到比较器 3005 的一个接入端。所述被测晶粒 3201 可以同时(或并行)实时运行(或执行)测试激励,并从各被测晶粒的输出端 3206 输出运行结果至比较器 3005 的另一个接入端。比较器 3005 对运行结果和预期结果进行比较,被测晶粒 3001 (或功能单元)的比较结果可以同时(或并行)存入与比较器 3005 的输出端相连的寄存器( 3004 )。各个寄存器( 3004 )中的比较结果均通过输出线路 3009 传输回测试器 3002 ,由测试器 3002 根据各个传回的比较结果判定对应被测晶粒 3201 是否功能正常。也可以采用类似图 30B 所示实施例中的方法,对各被测晶粒的运行结果进行相互比较,并将比较结果传输回测试器 3002 ,判定对应被测晶粒 3201 是否功能正常(即,被测功能单元是正常单元或失效单元)。通过图 31B 实施例检测的晶粒,其天线收发功能通路也得到了检测。  In the test auxiliary circuit of the present invention as shown in FIG. 31B, a receiving/transmitting antenna 3017 is provided on each of the measured dies, and the receiving/receiving/ The transmitting antenna 3017 can change the magnetic signal into an analog signal or a digital signal. The die with the transmit/transmit antenna can be a radio frequency tag (RFID) die. Tester 3002 passes the cable during the test operation 3021 transmits part of the test excitation to the receiving/transmitting device 3020, and performs wireless signal transmission through the receiving/transmitting antenna 3117 of the receiving/transmitting device 3020, from each measured die. The 3201's receive/transmit antenna 3017 is received. The remaining test excitations are passed through the tester 3002 through the input line 3008 through the access terminals of the respective die 3201. Transfer to all measured die 3201 on the same wafer. The receiving/transmitting antenna 3017 It can be fabricated on the same wafer using a semiconductor process, or it can be temporarily connected during testing. In the test operation, the tester 3002 also transmits the expected result to the comparator via the input line 3008. An access end of the 3005. The measured die 3201 can run (or perform) test excitation in real time (or in parallel) and output the operation result from the output 3206 of each measured die to the comparator 3005. Another access point. The comparator 3005 compares the operation result with the expected result, and the comparison result of the measured die 3001 (or the functional unit) can be simultaneously (or in parallel) stored in the comparator 3005. The output is connected to the register (3004). The comparison results in the respective registers (3004) are transmitted back to the tester 3002 via the output line 3009, by the tester 3002. It is determined whether the corresponding measured die 3201 is functioning normally according to the comparison result of each of the returns. Can also use a similar figure 30B In the method of the illustrated embodiment, the operating results of the measured dies are compared with each other, and the comparison result is transmitted back to the tester 3002 to determine the corresponding measured die 3201. Whether the function is normal (that is, the functional unit under test is a normal unit or a failed unit). The antenna transceiving functional path is also detected by the die detected by the embodiment of Fig. 31B.
在图 30A-B 和图 31A-B 中,晶圆 3000 上仅示意性的示出 2 x 2 的晶粒阵列。但对于本领域的人来说,本发明的原则同样适用于任何 M x N 的晶粒阵列。典型的晶粒阵列在图 15 和 16 和相关说明被描述。 In Figures 30A-B and 31A-B, only the schematic representation of 2 x 2 is shown on wafer 3000. The array of grains. However, the principles of the present invention are equally applicable to any MxN die array for those skilled in the art. A typical die array is depicted in Figures 15 and 16 and related descriptions.
本发明的测试辅助电路包括输入线路 3008 和输出线路 3009 对于被测晶粒的通路可以动态设置。对输入线路 3008 和输出线路 3009 动态设置的实施例在图 12-15 和相关说明被描述。 The test auxiliary circuit of the present invention includes an input line 3008 and an output line 3009. The path for the die to be measured can be dynamically set. An embodiment of the dynamic setting of input line 3008 and output line 3009 is depicted in Figures 12-15 and associated description.
本发明的测试辅助电路的输出线路 3009 包括一个控制电路,可将被测晶粒的比较结果串行的输出,从而能找出每一个晶粒的比较结果在晶圆上的对应位置。该控制电路的实施例在图 14 和 15 和相关说明中被描述。 The output line of the test auxiliary circuit of the present invention 3009 A control circuit is included to serially output the comparison result of the measured die, so that the corresponding position of the comparison result of each die on the wafer can be found. An embodiment of the control circuit is shown in Figures 14 and 15 And related descriptions are described.
本发明的测试辅助电路上还有供电电路,用于向所有或部分功能单元、输入电路、输出电路和判断电路供电。该供电电路的实施例在图 10 和相关说明中被描述。 The test auxiliary circuit of the present invention also has a power supply circuit for supplying power to all or part of the functional unit, the input circuit, the output circuit, and the decision circuit. An embodiment of the power supply circuit is depicted in Figure 10 and related description.
在本发明中,晶圆上的某个区域专用于和测试探针接触,以便向功能单元、输入电路、输出电路、及判断电路输入电源和激励以及读出判断结果。其实施例在图 16 和相关说明中被描述。 In the present invention, a certain area on the wafer is dedicated to contact with the test probe to input power and excitation to the functional unit, the input circuit, the output circuit, and the decision circuit, and to read out the judgment result. An embodiment of this is shown in Figure 16. And related descriptions are described.
在本发明中,测试辅助电路的一部分或全部设置在晶圆的切割道。其实施例在图 1 , 4 , 5 和 11 和相关说明中被描述。 In the present invention, part or all of the test auxiliary circuit is disposed in the scribe line of the wafer. Examples of Figures 1 , 4 , 5 and 11 And related descriptions are described.
在本发明中,测试辅助电路能被自测试。其实施例在图 16 和相关说明中被描述。 In the present invention, the test auxiliary circuit can be self-tested. An embodiment thereof is described in Fig. 16 and related description.
在本发明中,测试辅助电路是用晶圆制造工艺制成的。其实施例在图 16 和相关说明中被描述。  In the present invention, the test auxiliary circuit is fabricated using a wafer fabrication process. An embodiment thereof is described in Fig. 16 and related description.
在图 4 、 5 、 6 、 7 、 9 、 13 、 20 、 21 、 27 、 29 、 30 和 31 中,比较器可以是用来判断两个输入是否相等的装置,即两个输入相等时比较结果为正确,两个输入不等时比较结果为错误;也可以是用来判断两个输入的差值是否处于一个预定区间范围内的装置,即两个输入的差值在所述预定区间范围内时比较结果为正确,两个输入的差值不在所述预定区间范围内时比较结果为错误。  In Figures 4, 5, 6, 7, 9, 13, 20, 21, 27, 29, 30 And 31 The comparator can be a device for judging whether the two inputs are equal, that is, the comparison result is correct when the two inputs are equal, and the comparison result is an error when the two inputs are not equal; or can be used to determine the difference between the two inputs. Whether the value is within a predetermined range, that is, when the difference between the two inputs is within the predetermined interval, the comparison result is correct, and if the difference between the two inputs is not within the predetermined interval, the comparison result is an error.
工业实用性Industrial applicability
本发明所述的测试辅助电路可以做成标准单元形式按普通的布局布线流程供版图设计者使用,对于版图设计者而言,没有增加额外的工作量。 所述测试辅助电路可以使用与基底相同的材料和工艺制成。对于晶圆而言,可以在进行掩膜设计的同时添加测试辅助电路,并用相同的半导体工艺制造的,在半导体生产阶段不需要额外的步骤和成本。在并行测试阶段,使用测试辅助电路相应的测试程序,可以很方便地定位失效被测单元,易于使用。 The test auxiliary circuit of the present invention can be used as a standard unit form for the layout designer to use in a normal layout and routing process, and no additional workload is added to the layout designer. The test aid circuit can be made using the same materials and processes as the substrate. For wafers, test aids can be added while masking is being designed and fabricated using the same semiconductor process, requiring no additional steps and costs in the semiconductor manufacturing stage. In the parallel test phase, using the test program corresponding to the test auxiliary circuit, it is convenient to locate the failed test unit and it is easy to use.
序列表自由内容Sequence table free content

Claims (34)

  1. 一种用于测试在晶圆( wafer )上多个功能相同晶粒( die )的装置,每个晶粒包括一个功能单元,所述测试装置包括一个测试辅助电路,包括: One for testing multiple functionally identical dies on a wafer (die) The device, each die comprising a functional unit, the test device comprising a test auxiliary circuit comprising:
    设置在晶圆上的输入电路,该输入电路通过每个功能单元的接入点与每个功能单元相连接,用于向每个功能单元输入测试激励,所述功能单元按照测试激励执行预定功能,并产生执行结果;An input circuit disposed on the wafer, the input circuit being connected to each functional unit through an access point of each functional unit for inputting a test stimulus to each functional unit, the functional unit performing a predetermined function according to the test excitation And produce an execution result;
    设置在晶圆上的多个判断电路,每个判断线路和被测功能单元( DUT , device under test )连接,用于判断被测功能单元的执行结果是否正确;A plurality of judging circuits disposed on the wafer, each judging line and the tested functional unit (DUT, device under test) The connection is used to determine whether the execution result of the tested functional unit is correct;
    设置在晶圆上的输出电路,输出电路和所有判断电路相连,用于输出所有判断电路的判断结果;An output circuit disposed on the wafer, the output circuit being connected to all of the determining circuits for outputting the judgment result of all the determining circuits;
    所述判断结果用于决定每个被测功能单元是正常单元或失效单元。The result of the determination is used to determine whether each functional unit under test is a normal unit or a failed unit.
  2. 根据权利要求 1 所述的装置,还包括: The apparatus of claim 1 further comprising:
    设置在晶圆上的供电电路,用于向所有或部分功能单元、输入电路、输出电路和判断电路供电。A power supply circuit disposed on the wafer for supplying power to all or a portion of the functional unit, the input circuit, the output circuit, and the decision circuit.
  3. 根据权利要求 1 所述的装置,其特征在于所述装置测试晶圆上的全部或部分晶粒。The device of claim 1 wherein said device tests all or a portion of the die on the wafer.
  4. 根据权利要求 1 所述的装置,其特征在于一个测试探针和所述装置中的一个功能单元的接入点相接触,所述输入电路包括:将激励和 / 或电源通过该功能单元相连的接入点送到全部或一部分功能单元、输入电路、输出电路、及判断电路的线路。The apparatus of claim 1 wherein a test probe is in contact with an access point of a functional unit of said apparatus, said input circuit comprising: / or the power supply is sent to all or part of the functional unit, the input circuit, the output circuit, and the circuit of the judgment circuit through the access point connected to the functional unit.
  5. 根据权利要求 1 所述的装置,所述激励包括预期结果,所述判断电路包括:The apparatus of claim 1, the stimulus comprising an expected result, the determining circuit comprising:
    一个比较器,其一输入端和一被测功能单元的执行结果输出相连,其另一输入端和预期结果相连,所述比较器将预期结果和执行结果进行比较。A comparator having an input coupled to an execution result output of a tested functional unit and another input coupled to an expected result, the comparator comparing the expected result to an execution result.
  6. 根据权利要求 5 所述的装置,所述预期结果通过输入电路送到被测功能单元。The apparatus of claim 5 wherein said expected result is sent to the functional unit under test via the input circuit.
  7. 根据权利要求 6 所述的装置,其特征在于:The device of claim 6 wherein:
    所述比较器的输出和一寄存器的输入相连,所述寄存器的输出和输出电路相连。The output of the comparator is coupled to an input of a register whose output is coupled to an output circuit.
  8. 根据权利要求 1 所述的装置,所述判断电路包括:The apparatus according to claim 1, wherein said determining circuit comprises:
    一个比较器,其一输入端和一被测功能单元的执行结果输出相连,其另一输入端和另一被测功能单元的执行结果输出相连,所述比较器将一被测功能单元的执行结果和另一被测功能单元的执行结果进行比较。a comparator having an input connected to an execution result output of a tested functional unit, the other input being coupled to an execution result output of another tested functional unit, the comparator performing the execution of a tested functional unit The result is compared to the execution result of another measured functional unit.
  9. 根据权利要求 8 所述的装置,其特征在于所述The device according to claim 8 wherein said said
    所述比较器的输出和一寄存器的输入相连,所述寄存器的输出和输出电路相连。The output of the comparator is coupled to an input of a register whose output is coupled to an output circuit.
  10. 根据权利要求 8 所述的装置,其特征在于一个测试探针和所述装置中的输出电路相连接。The device of claim 8 wherein a test probe is coupled to the output circuit of said device.
  11. 根据权利要求 1 所述的装置,其特征在于一个测试探针和所述装置中的一个功能单元的接入点相接触,根据该功能单元在晶圆上的位置,所述输入电路和输出电路与功能单元的连接通路可被动态设置。According to claim 1 The device characterized in that a test probe is in contact with an access point of a functional unit of the device, according to the position of the functional unit on the wafer, the input circuit and the output circuit and the functional unit The connection path can be dynamically set.
  12. 根据权利要求 1-11 中所述的任一装置,其特征在于:A device according to any of claims 1-11, characterized in that:
    每个功能单元包括或连接到一收 / 发天线,该功能单元包括无线收 / 发信号功能的线路,该线路的输入与收 / 发天线相连接,用于接收从收 / 发天线送来的部分或全部测试激励,或发射该功能单元的全部或部分执行结果。Each functional unit includes or is connected to a receiving/transmitting antenna, and the functional unit includes a line for wireless receiving/transmitting function, and the input and receiving of the line are The transmitting antenna is connected for receiving part or all of the test excitation sent from the receiving/transmitting antenna, or transmitting all or part of the execution result of the functional unit.
  13. 根据权利要求 12 中所述的任一装置,其特征在于:A device according to any of claims 12, wherein:
    所述功能单元为射频标签( RFID )晶粒。The functional unit is a radio frequency tag (RFID) die.
  14. 根据权利要求 1-11 中所述的任一装置,其特征在于:A device according to any of claims 1-11, characterized in that:
    每个功能单元包括一光电转换区域,该功能单元光电转换区域的输出和功能单元内电路相连接,用于接收从光源发送来的部分或全部测试激励。Each functional unit includes a photoelectric conversion region, and an output of the photoelectric conversion region of the functional unit is connected to a circuit within the functional unit for receiving some or all of the test excitations transmitted from the light source.
  15. 根据权利要求 14 中所述的任一装置,其特征在于:A device according to any of claims 14 wherein:
    所述功能单元为 CMOS 传感器( CMOS sensor )或其他成像芯片。The functional unit is a CMOS sensor or other imaging chip.
  16. 根据权利要求 1-11 中所述的任一装置,其特征在于:A device according to any of claims 1-11, characterized in that:
    晶圆上的某个区域专用于和测试探针接触,以便向功能单元、输入电路、输出电路、及判断电路输入电源和激励以及读出判断结果。An area on the wafer is dedicated to contact with the test probe to input power and excitation to the functional unit, the input circuit, the output circuit, and the decision circuit, and to read out the judgment result.
  17. 根据权利要求 1-11 中所述的任一装置,其特征在于:A device according to any of claims 1-11, characterized in that:
    输入电路、输出电路、及判断电路的线路设置在切割道( scribe line )。The lines of the input circuit, the output circuit, and the judging circuit are disposed on a scribe line.
  18. 根据权利要求 15 中所述的任一装置,其特征在于:A device according to any of claims 15 wherein:
    测试辅助电路中位于切割道中与晶粒连接的线路,其连接线延伸到切割道的中线区域,以保证在切割时被切断。A line in the test auxiliary circuit that is connected to the die in the scribe line, the connecting line of which extends to the midline area of the scribe line to ensure that it is cut during cutting.
  19. 根据权利要求 1-11 中所述的任一装置,其特征在于:A device according to any of claims 1-11, characterized in that:
    所述测试辅助电路能被自测试。The test auxiliary circuit can be self-tested.
  20. 根据权利要求 1-11 中所述的任一装置,其特征在于:A device according to any of claims 1-11, characterized in that:
    所述测试辅助电路是用晶圆制造工艺制成的。The test auxiliary circuit is fabricated using a wafer fabrication process.
  21. 一种用于测试在晶圆上多个功能相同晶粒的方法,每个晶粒包括一个功能单元,所述包括如下步骤:A method for testing a plurality of functionally identical dies on a wafer, each dies comprising a functional unit, the steps comprising the steps of:
    在晶圆上设置输入电路,输入电路通过每个功能单元的接入点与每个功能单元相连接;An input circuit is disposed on the wafer, and the input circuit is connected to each functional unit through an access point of each functional unit;
    在晶圆上设置多个判断电路,每个判断电路和被测功能单元连接;A plurality of judging circuits are disposed on the wafer, and each judging circuit is connected to the tested functional unit;
    在晶圆上设置输出电路,输出电路和所有判断电路相连;An output circuit is disposed on the wafer, and the output circuit is connected to all of the determining circuits;
    通过输入电路向每个功能单元输入测试激励;Inputting a test stimulus to each functional unit through an input circuit;
    所述每个功能单元按照测试激励执行预定功能,并产生执行结果;Each of the functional units performs a predetermined function according to the test stimulus, and generates an execution result;
    通过判断电路判断被测功能单元的执行结果是否正确;Determining whether the execution result of the tested functional unit is correct by the determining circuit;
    通过用于输出电路输出判断电路的判断结果;The judgment result of the circuit is judged by the output circuit output;
    根据判断结果决定每个被测功能单元是正常单元或失效单元。According to the judgment result, each functional unit to be tested is determined to be a normal unit or a failed unit.
  22. 根据权利要求 21所述的方法,还包括如下步骤:The method of claim 21 further comprising the steps of:
    在晶圆上设置供电电路;Providing a power supply circuit on the wafer;
    通过供电电路向所有或部分功能单元、输入电路、输出电路和判断电路供电。Power is supplied to all or part of the functional units, input circuits, output circuits, and decision circuits through the power supply circuit.
  23. 根据权利要求 21所述的方法,还包括如下步骤:The method of claim 21 further comprising the steps of:
    用一个测试探针和一个功能单元的接入点相接触;Using a test probe to contact an access point of a functional unit;
    根据该功能单元在晶圆上的位置,动态设置所述输入电路和输出电路与功能单元的连接通路。The connection path between the input circuit and the output circuit and the functional unit is dynamically set according to the position of the functional unit on the wafer.
  24. 根据权利要求 21中所述的方法,其特征在于还包括如下步骤:The method of claim 21 further comprising the steps of:
    在晶圆上设置某个区域专用于和测试探针接触,Setting a region on the wafer is dedicated to contact with the test probe,
    通过专用区域向功能单元、输入电路、输出电路、及判断电路输入电源和激励以及读出判断结果。The power supply and the excitation are input to the functional unit, the input circuit, the output circuit, and the judgment circuit through the dedicated area, and the judgment result is read.
  25. 根据权利要求 21-24 中所述的任一方法,其特征在于:A method according to any of claims 21-24, characterized in that:
    输入电路、输出电路、及判断电路的线路被设置在切割道。The lines of the input circuit, the output circuit, and the judging circuit are disposed on the scribe line.
  26. 一种用于测试在电路板( circuit board )上多个功能相同芯片的装置,所述测试装置包括一个测试辅助电路,包括:One for testing on a circuit board a device having a plurality of functionally identical chips, the test device comprising a test auxiliary circuit comprising:
    设置在电路板上的输入电路,该输入电路通过电路板上的测试接触点与每个芯片的引脚相连,用于向每个芯片输入测试激励,所述芯片按照测试激励执行预定功能,并产生执行结果;An input circuit disposed on the circuit board, the input circuit being connected to a pin of each chip through a test contact point on the circuit board for inputting a test stimulus to each chip, the chip performing a predetermined function according to the test stimulus, and Produce an execution result;
    设置在电路板上的多个判断电路,每个判断线路和被测芯片连接,用于判断被测芯片的执行结果是否正确;a plurality of judging circuits disposed on the circuit board, each judging line and the chip under test being connected to determine whether the execution result of the tested chip is correct;
    设置在电路板上的输出电路,输出电路和所有判断电路相连,用于输出所有判断电路的判断结果;An output circuit disposed on the circuit board, the output circuit being connected to all of the determining circuits for outputting the judgment result of all the determining circuits;
    所述判断结果用于决定每个被测芯片是正常单元或失效单元。The result of the determination is used to determine whether each chip under test is a normal unit or a failed unit.
  27. 根据权利要求 26 所述的装置,还包括:The apparatus of claim 26, further comprising:
    设置在电路板上的供电电路,用于向芯片、输入电路、输出电路和判断电路供电。 A power supply circuit disposed on the circuit board for supplying power to the chip, the input circuit, the output circuit, and the determination circuit.
  28. 根据权利要求 26 所述的装置,其特征在于一个测试接触点和所述装置中的一个芯片的引脚相接触,所述输入电路包括:将激励和/或电源通过该芯片相连的测试接触点送到其他芯片、输入电路、输出电路、及判断电路的线路。According to claim 26 The device is characterized in that a test contact point is in contact with a pin of one of the devices, the input circuit comprising: sending a test contact point connected to the excitation and/or power supply through the chip to another chip , input circuit, output circuit, and circuit for judging circuit.
  29. 根据权利要求 26 所述的装置,所述激励包括预期结果,所述判断电路包括:The apparatus of claim 26, wherein said stimulating comprises an expected result, said determining circuit comprising:
    一个比较器,其一输入端和一被测芯片的执行结果输出相连,其另一输入端和预期结果相连,所述比较器将预期结果和执行结果进行比较。A comparator having an input connected to an execution result output of a chip under test and another input connected to an expected result, the comparator comparing the expected result with the execution result.
  30. 根据权利要求 29 所述的装置,所述预期结果通过输入电路送到被测芯片。The apparatus of claim 29, wherein said expected result is sent to a chip under test via an input circuit.
  31. 根据权利要求 30 所述的装置,其特征在于:The device of claim 30 wherein:
    所述比较器的输出和一寄存器的输入相连,所述寄存器的输出和输出电路相连。The output of the comparator is coupled to an input of a register whose output is coupled to an output circuit.
  32. 根据权利要求 26 所述的装置,所述判断电路包括:The apparatus of claim 26, the determining circuit comprising:
    一个比较器,其一输入端和一被测芯片的执行结果输出相连,其另一输入端和另一被测芯片的执行结果输出相连,所述比较器将一被测芯片的执行结果和另一被测芯片的执行结果进行比较。a comparator having an input connected to an execution result output of a test chip, and another input connected to an execution result output of another test chip, the comparator performing an execution result of the tested chip and another The execution results of a tested chip are compared.
  33. 根据权利要求 32 所述的装置,其特征在于所述The device according to claim 32, wherein said said
    所述比较器的输出和一寄存器的输入相连,所述寄存器的输出和输出电路相连。The output of the comparator is coupled to an input of a register whose output is coupled to an output circuit.
  34. 根据权利要求 32 所述的装置,其特征在于一个测试接触点和所述装置中的输出电路相连接。32. Apparatus according to claim 32 wherein a test contact is connected to an output circuit in said apparatus.
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