JP2000121703A - Method and device for testing electrical characteristic of semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce time by connecting each of a plurality of the same type of measurement units in parallel and testing the electrical characteristics of a semiconductor module in parallel. SOLUTION: Control equipment and the input portion of a plasma display panel(PDP) module 101 are connected via a control bus I/F. Also, branch lines are provided from the area between a multiplexer relay unit 104 and an attenuator 53, and a high-voltage V/I source unit 106 that is a power supply for applying a prescribed voltage and current to a device is connected to one of the branch lines. Further, the branch line is provided also from the area between the attenuator 53 and a comparator 54, and a time measurement unit 107 for measuring delay time is connected to the branch line. Also, six high-voltage V/I source units 106 and six time measurement units 107 are connected in parallel and are also connected to the control bus I/F.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for testing electrical characteristics of a semiconductor module.

[0002]

2. Description of the Related Art Generally, a semiconductor module is constructed as shown in FIG.
As shown in FIG. 1A, a plurality of semiconductor integrated circuits (hereinafter, referred to as ICs) 2 are mounted on a module base 3, and an input unit 4 for inputting a specific signal to each of the ICs 2;
And an output unit 5 for outputting a signal processed in C2. The input section 4 and the output section 5 are both electrode sections 6
Although not shown in the figure, the pins provided on each of the ICs 2 are electrically connected to the input unit 4 and the output unit 5. That is, in the electrode portions 6 of the input portion 4 and the output portion 5, test pin contact pads 7 as shown in FIG. 4 (b) correspond to the number of all pins of the IC 2 mounted on the semiconductor module 1. The same number is provided.

As shown in FIG. 5, a device for testing the electrical characteristics of a semiconductor module generally used in the prior art (hereinafter referred to as a tester) is provided with a relay 52 in a tester 51, and the Connector 5 on one side
6 are provided, and the tip of the connector 56 has the same number of probes (not shown) as the number of pins of one IC 2 mounted in the semiconductor module 1 under test. Measuring units 55 are connected in parallel to the other of the relays 52, and an attenuator 53 for converting a signal according to a test item related to the measuring units is interposed between the measuring units. Each measuring unit 55
Is connected to one of the comparators 54, and a control device (not shown) is connected to the other of the comparators 54. The control device is connected to an input section of the semiconductor module 1 via a control bus (not shown) or the like, thereby performing control in testing the semiconductor module 1.

In a conventional method for testing the electrical characteristics of a semiconductor module, first, as shown in FIGS. 4B and 5, a connector 56 provided on a tester 51 is connected to a test pin contact of a semiconductor module 1 under test. Connect to pad 7. At this time, the probe 102 and the test pin contact pad 7 provided at the tip of the connector 56 are electrically connected. Next, by connecting the control device to the input unit 4 of the semiconductor module 1, a necessary signal is input from the control device to the input unit of the semiconductor module 1, and the signal is transmitted to each IC 2 inside the semiconductor module 1. After that, it is output to the test pin contact pad 7 connected to each IC 2. A signal output from the connector 56 connected to the test pin contact pad 7 via the relay 52 is transmitted to each measurement unit 55,
A specific test decision is made by those measuring units 55. After performing a specific test determination, the signal output to the comparator 54 is output to an external interface (not shown).
, And output to the control device to complete a series of electrical characteristics tests of the semiconductor module. Actually, there is almost no case in which only one IC is mounted inside the semiconductor module to be tested. In addition, since the number of probes of the connector corresponds to the number of pins of one IC under test, The electrical characteristic test of the semiconductor module has been performed by replacing the connector for each test pin contact pad corresponding to each IC.

In recent years, as a typical semiconductor module,
A plasma display panel (PDP) module, which has been researched and developed and is expected to have higher performance, has been raised. This PDP module has the same IC inside.
And the total number of pins of the ICs is 384.
That goes over. Therefore, the electrical characteristic test on the PDP module is no exception, and the electrical characteristic test is performed by replacing the connector with the corresponding PDP module by the number of ICs mounted inside the PDP module.

[0006]

However, the following problems have occurred in the conventional apparatus and method for testing the electrical characteristics of a semiconductor module, particularly a PDP module. The contents of the electrical characteristic test of the conventional semiconductor module are specified in the breakdown voltage test and the leak test item of a discrete (single) element such as a diode. On the other hand, in testing ICs mounted on PDP modules, tests such as high voltage measurement and delay measurement are mainly performed. for that reason,
Compared to the time required for tests such as high voltage measurement and delay measurement,
The time that can be spent on the pressure test and the leak test has been relatively short. Therefore, a sufficient time cannot be set for a withstand voltage test or a leak test, and a conventional test method for electrical characteristics of a semiconductor module cannot perform a very effective test.

[0007] In addition, since the conventional electrical characteristic test apparatus is equipped with only one different measurement unit,
In recent years, the number of IC pins, which tends to increase in recent years, cannot be handled, and the number of measurements and the measurement range for each measurement item have increased.

Further, since the number of connectors provided on the tester is small with respect to the semiconductor module under test, the switching connection of the connector to the untested test pin contact pad has been manually performed. Etc. affect the switching time measurement slightly.
In addition, artificial measurement errors and switching errors have caused a great deal of problems in the test results. As described above, the high voltage measurement and the delay measurement of the semiconductor module using the conventional electrical characteristic test apparatus take too much time, which adversely affects a smooth product shipping operation.

A method and an apparatus for testing the electrical characteristics of a semiconductor module according to the present invention have been made in view of the above-mentioned problems in the prior art, and each IC mounted on the semiconductor module via a multiplexer relay unit. In view of the above, an object of the present invention is to install a plurality of measurement units in parallel, thereby enabling a reduction in time by performing an electrical characteristic test of the semiconductor module in parallel.

[0010] In addition to testing individual ICs mounted on a semiconductor module, it is also possible to perform a test of instructions or the like operated by a plurality of ICs or a test between a plurality of ICs.

[0011]

According to a first aspect of the present invention, there is provided an apparatus for testing electrical characteristics of a semiconductor module provided to solve the above-mentioned problems, the probe having a number of probes equal to or more than the total number of test pins of the semiconductor module. Such a probe is connected to a plurality of the same type of measurement units via a multiplexer relay unit, and the plurality of the same type of measurement units are connected in parallel with each other.

The semiconductor module has probes equal to or more than the total number of test pins, and the probes are connected to a plurality of the same type of measurement units via a multiplexer relay unit. Each is connected in parallel with each other, eliminating the hassle of testing with reconnecting the connector to the test pin contact pad as in the past, and combined with the parallel configuration of the measurement units, The time required for the test can be reduced.

According to a second aspect of the present invention, there is provided an apparatus for testing electrical characteristics of a semiconductor module, the number of connectors being equal to or greater than the number of ICs mounted on the semiconductor module. A plurality of the same type of measurement units are connected via the relay unit, and each of the plurality of the same type of measurement units is connected in parallel with each other.

The semiconductor module has at least as many connectors as the number of ICs mounted on the semiconductor module. The connectors are connected to a plurality of the same type of measurement units via a multiplexer relay unit, and the plurality of the same type of measurement units are provided. Since the units are connected in parallel with each other, it is possible to efficiently test the same IC.

[0015] In a third aspect of the present invention, there is provided an electrical characteristic testing apparatus for a semiconductor module provided to solve the above-mentioned problem, wherein the number of the same type of measuring units is the same as the number of the ICs. .

Since the number of the same type of measurement units is the same as the number of the ICs, it is possible to test the ICs mounted on the semiconductor module in parallel, and the time required for the test is the same as the time required for testing one IC. It is possible to shorten it to the extent that it does not change.

A fourth aspect of the present invention, which is provided to solve the above-mentioned problem, is a semiconductor module electrical characteristic test apparatus, wherein a multiplexer relay unit is provided with a number of multiplexer relays equal to or greater than the number of the ICs. .

By providing more than the number of the multiplexer relays, it is possible to perform a duplicate test or a multiple test for each IC, thereby increasing the degree of freedom in selecting test items.

A fifth aspect of the present invention provides an apparatus for testing electrical characteristics of a semiconductor module according to a fifth aspect of the present invention, wherein the measuring unit is a time measuring unit and a voltage measuring unit.

The main test items of a semiconductor module on which a large number of ICs such as a PDP module are mounted are delay time measurement and voltage measurement, which occupy most of the test time. The use of the measurement unit and the voltage measurement unit makes it possible to reduce the test time.

According to a sixth aspect of the present invention, there is provided an apparatus for testing electrical characteristics of a semiconductor module according to a sixth aspect of the present invention, wherein the semiconductor module is a PDP module.

Since the PDP module is a semiconductor module in which all the mounted ICs are the same, it is possible to shorten the test time and to realize a test between the ICs mounted on the PDP module under test.

A method for testing electrical characteristics of a semiconductor module according to a seventh aspect of the present invention, which is provided to solve the above problem, is characterized in that an electric signal from each probe connected to a semiconductor module under test is transmitted via a multiplexer relay unit. The ICs mounted on the semiconductor module under test are tested in parallel by being sent to the measurement unit.

An electric signal is sent from each of the probes connected to the semiconductor module under test to the measuring unit via the multiplexer relay unit, thereby testing the ICs mounted on the semiconductor module under test in parallel. Switching to a semiconductor module under test such as a probe becomes unnecessary, and the test time can be shortened.

In order to solve the above-mentioned problems, an electrical characteristic test method for a semiconductor module according to an eighth invention of the present application provides an electrical signal from each of a plurality of connectors connected to a semiconductor module to be tested through a multiplexer relay unit. The IC mounted on the semiconductor module under test is tested in parallel by being sent to the measurement unit via the semiconductor module under test.

An electric signal is sent from each of the plurality of connectors connected to the semiconductor module under test to the measurement unit via the multiplexer relay unit, thereby testing the ICs mounted on the semiconductor module under test in parallel. Thus, an individual test for each IC can be performed.

A ninth aspect of the present invention provides a method of testing electrical characteristics of a semiconductor module, wherein the semiconductor module is a PDP module.

Since the same IC is mounted in the PDP module under test because the semiconductor module is a PDP module, the same test can be performed in parallel for each IC, and the test is started. Time is further reduced.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A PDP according to an embodiment of the present invention will now be described with reference to the accompanying drawings.
The module will be described as an example with reference to the drawings. As shown in FIG. 1, a tester 51, which is an apparatus for testing electrical characteristics of a semiconductor module according to an embodiment of the present invention, includes six ICs
384 probes 102, the same number of pins as
The probe 102 is connected to the input unit 10 of the multiplexer relay unit 104 by 384 wirings.
4a is connected one-to-one. From the output unit 104b of the multiplexer relay unit 104, wiring is converged and connected to an attenuator 53. The attenuator 53 is connected to a control device (not shown) via a comparator 54. The control device and the input unit 4 of the PDP module 101 are connected to a control bus I / F (not shown).
Connected through. A branch line is provided between the multiplexer relay unit 104 and the attenuator 53, and one of the branch lines is connected to a high voltage V / I source unit 106 which is a power supply for applying a specified voltage or current to the device. ing. Further, a branch line is also provided from between the attenuator 53 and the comparator 54, and connects a time measuring unit 107 for measuring a delay time. The high voltage V / I source unit 106 and the time measurement unit 107 are connected in parallel to each other, and are also connected to the control bus I / F.

Next, an electrical test apparatus for a semiconductor module according to an embodiment of the present invention will be described with reference to the drawings, in which a test is performed using a PDP module as an example. FIG.
In the external view of the PDP module shown in FIG.
The DP module 1 has six ICs 2 each having 64 pins, and the pins of each IC 2, the input unit 4, and
The 384 test pin contact pads 7 provided on the electrode section 6, which are the ends of the output section 5, correspond one-to-one and are electrically connected.

As shown in FIG. 3B, the probe 102 of the tester 51 is connected to the test pin contact pad 7 of the PDP module 101. Further, the output unit of the tester, that is, the output unit of the comparator 54 and the control device are connected by a control interface (not shown).

Next, the control device connected to the outside of the tester generates a signal according to the item related to the electrical characteristic test on the PDP.
The data is input to the module 101 via the input unit. Such a signal is transmitted to each IC 2 mounted in the PDP module 101.
To the multiplexer relay unit 104 via the test pin contact pad 7 corresponding to each pin of the IC 2. The multiplexer relay unit 104 is capable of selectively allocating input / output signals according to test items.
A signal related to the voltage test of the high voltage V / I source unit
06 and are processed in parallel. In addition, the signal reaching the time measuring unit 107 via the attenuator 53 is processed in the same manner. The signal processed in each measurement unit is PASS
By transmitting the two types of signals (1) or FAIL (0) to the comparator 54 and outputting them to the control device, the test related to the electrical characteristics of the PDP module 101 is completed.

In the output voltage test, the PDP module 101
Is the most time-consuming item to test the electrical characteristics of The parallel measurement is performed for each IC using six high voltage V / I sources 106 used for the output voltage test, and the test time can be reduced to 1/6 as compared with the related art. A time measurement unit 1 used for delay time measurement
By using six 07s, independent tests are performed on each IC in the PDP module 101 in the same manner as described above, and the test time can be reduced to 1/6.

Further, according to the above embodiment,
For example, one IC has 64 pins (output)
In this case, the total number of pins of the IC mounted on the PDP module is 64 × 6 = 384 pins. Conventionally, 1 to 64
(Pins), 65-128 (pins), 129-192 (pins), 193-256 (pins), 257-320 (pins), 321-384 (pins),
Although each was measured, it was difficult to perform a mutual test between adjacent pins such as the 64th pin and the 65th pin,
Where necessary, these adjacent test pin contact pads are again tested, but the test apparatus according to the present invention makes it possible to test the IC as a single device.

As another embodiment of the apparatus for testing electrical characteristics of a semiconductor module according to the present invention, as shown in FIG. 2, a plurality of connectors 56 are connected to an input side 104a of a multiplexer relay unit 104 in a tester 51. It is also possible to provide. This is not intended to shorten the time required for the test by the comprehensive test method and its apparatus as in the above-described embodiment, but to reduce the time required for the individual test modules mounted on the semiconductor module under test. I
A test can be selectively performed on C. In particular, it is possible to perform an effective test when all the ICs are different ICs or when the test items to be performed simultaneously are different even if the ICs are the same. .

【The invention's effect】

By testing a plurality of ICs under test as a single device, it is possible not only to reduce the time required for the test, but also to perform a test between ICs in a semiconductor module, which could not be performed conventionally. Becomes possible. Conventionally, when testing a semiconductor module, the connection between the probe and the test pin contact pad was switched by switching, so the switching wiring capacitance and other factors had an effect, and the switching time measurement was slightly affected. Has no effect. Furthermore, the simplification of the process can prevent artificial measurement errors or switching errors.

[0037]

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an apparatus for testing electrical characteristics of a PDP module according to an embodiment of the present invention.

FIG. 2 is a configuration diagram of an apparatus for testing electrical characteristics of a PDP module according to another embodiment of the present invention.

FIG. 3A is a configuration diagram of a PDP module according to the present invention. (B) It is an enlarged block diagram of a probe and a test pin contact pad at the time of performing an electrical characteristic test of a PDP module in the present invention.

FIG. 4A is a configuration diagram of a conventional apparatus for testing electrical characteristics of a semiconductor module. FIG. 4B is an enlarged configuration diagram of a probe and a test pin contact pad when performing an electrical characteristic test of a conventional semiconductor module.

FIG. 5 is a configuration diagram of a conventional apparatus for testing electrical characteristics of a semiconductor module.

[Explanation of symbols]

 1. Semiconductor module 2. 2. Semiconductor integrated circuit (IC) Module base 4. Input unit 5. Output unit 6. Electrode section 7. Test pin contact pad 51. Tester 52. Relay 53. Attenuator 54. Comparator 55. Measuring unit 56. Connector 101. PDP module 102. Probe 104. Multiplexer relay unit 106. High voltage V / I source 107. Time measurement unit

Claims (9)

[Claims] 1. An electric circuit for a semiconductor integrated circuit, comprising: a probe connected to a measurement unit for performing a specific test via a relay, the probe being connected to test electrical characteristics of a semiconductor module having a plurality of semiconductor integrated circuits mounted thereon. In the dynamic characteristic test apparatus, the semiconductor module has probes that are equal to or more than the total number of test pins, the probes are connected to a plurality of the same type of measurement units via a multiplexer relay unit, and the plurality of the same types of the same type are provided. Wherein each of the measurement units is connected in parallel with each other. 2. A semiconductor integrated circuit having a connector connected to a test unit for performing a specific test via a relay and connected for testing electrical characteristics of a semiconductor module having a plurality of the same semiconductor integrated circuit mounted thereon. In the electrical characteristics test apparatus, the semiconductor module has more than the number of connectors of the semiconductor integrated circuit mounted on the semiconductor module, such connectors are connected to a plurality of the same type of measurement unit provided via a multiplexer relay unit, An electrical characteristic test apparatus for a semiconductor integrated circuit, wherein a plurality of the same type of measurement units are connected in parallel with each other. 3. The electrical characteristic test apparatus according to claim 1, wherein the number of the same type of measurement units is the same as the number of the semiconductor integrated circuits. 4. The electrical characteristic testing apparatus according to claim 1, wherein the number of multiplexer relays provided in the multiplexer relay unit is equal to or greater than the number of the semiconductor integrated circuits. 5. The electrical characteristic test apparatus according to claim 1, wherein the measuring unit is a time measuring unit and a voltage measuring unit. 6. The electrical characteristic test apparatus according to claim 1, wherein said semiconductor module is a PDP module. 7. A probe is connected to a test pin contact pad of a semiconductor module to be tested, and an electric signal is transmitted from the probe to a measurement unit for performing a specific test via a relay, so that the test is performed. In the method for testing the electrical characteristics of a semiconductor module, an electric signal from each probe connected to the semiconductor module under test is sent to a measurement unit via a multiplexer relay unit, so that the probe is mounted on the semiconductor module under test. A method for testing electrical characteristics of a semiconductor module, comprising testing semiconductor integrated circuits in parallel. 8. A device to be tested by connecting a connector to a test pin contact pad of a semiconductor module to be tested and transmitting an electrical signal from the connector to a measuring unit for performing a specific test via a relay. In the method for testing the electrical characteristics of a semiconductor module, an electrical signal is transmitted from each of a plurality of connectors connected to the semiconductor module under test to a measurement unit via a multiplexer relay unit, so that the semiconductor module is mounted on the semiconductor module under test. A method for testing electrical characteristics of a semiconductor module, wherein the semiconductor integrated circuits are tested in parallel. 9. The method for testing electrical characteristics of a semiconductor module according to claim 7, wherein said semiconductor module is a PDP module.