WO2011163442A1 - Strain gage resistance calibration using shunts - Google Patents
Strain gage resistance calibration using shunts Download PDFInfo
- Publication number
- WO2011163442A1 WO2011163442A1 PCT/US2011/041572 US2011041572W WO2011163442A1 WO 2011163442 A1 WO2011163442 A1 WO 2011163442A1 US 2011041572 W US2011041572 W US 2011041572W WO 2011163442 A1 WO2011163442 A1 WO 2011163442A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resistive grid
- strain gage
- shunting
- shunts
- resistance
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L25/00—Testing or calibrating of apparatus for measuring force, torque, work, mechanical power, or mechanical efficiency
Definitions
- the present disclosure relates to strain gages and more particularly, to strain gages including shunts for calibration.
- Patent No. 4,172,249 where a resistive foil material is deposited by cemented on a rigid substance, usually a ceramic.
- a photoetched pattern of resistive lines is formed with shunts so that the total resistance can be increased by opening one or more of the shunts until the desired resistance value is obtained.
- Mechanical or thermal strains will produce resistance changes rendering the resistor unstable. Therefore, the resistor must be insulated from mechanical or thermal strain so as to maintain the resistance stable. To accomplish this, the resistor is enrobed in a flexible rubber, and then it is encapsulated by an epoxy resin. Any outside force (mechanical or thermal) does not deform the resistor because of its rubber and epoxy protections.
- the resistor is put into a metal case with oil surrounding the resistor. Thus, the resistor is meant to be stable and its resistance should not respond to or be altered by outsides forces.
- a strain gage is a device used to measure the strain of an object subject to a force.
- the most common type of strain gage consists of a very thin insulating backing which supports a very thin resistive grid.
- a typical strain gage looks like a postage stamp.
- the resistance of the strain gage changes its Ohmic value as a function of the strain due to deformation.
- a strain gage differs from the known resistive device in that the application of force to the surface where the strain gage is mounted results in a change to the resistive value of the strain gage.
- strain gages When manufactured through photoetching of a resistive grid, strain gages have an initial or first resistance value that is set below a desired target resistance value.
- the final adjustment or calibration of the resistive grid to the target resistance value is done by abrading or etching the grid which reduces the thickness of the strain gage. The reduction of the thickness increases the resistance until the value arrives at the desired target resistance value.
- Adjustment by etching of the resistive surface removes the oxide and during re-oxidation the strain gage changes value with time. Rubbing of the resistive surface in addition to removing the oxide, produces cold working of the metal, hence changing the temperate coefficient of resistance (TCR) and introduces instability, due to changes in resistance value with time.
- TCR temperate coefficient of resistance
- a resistive grid is formed on an insulating substrate.
- a plurality of shunts are associated with the resistive grid, each of the shunts include one or more shunting bars.
- Severing a shunting bar alters (e.g., increases) the resistance of the resistive grid.
- Severing of one or more shunting bars can be performed by: chemical etching, electro-chemical etching, a laser beam, metal cutting and particle blasting. Shunting bars can be located on at least one edge of the resistive grid or in a defined internal area within the resistive grid.
- Figure 1 shows a strain gage with shunts disposed on multiple edges of a resistive grid
- Figure 2 shows the strain gage with trimmed shunts
- Figures 3a and 3b show a portion of a resistive grid with internal shunts formed in a protrusion formed in the resistive grid
- Figure 4 shows a portion of a resistive grid with internal shunts formed in the internal area of the resistive grid.
- FIG. 1 shows an exemplary strain gage 100, having multiple shunts 130 providing a variety of trimming or severing options.
- Figure 2 shows the exemplary strain gage 100 including a number of shunts that have been trimmed to form trimmed shunts 132.
- the preferred strain gage 100 includes a flexible insulating substrate 110, a resistive grid 112 extending between terminal pads 140 and shunts 130.
- the resistive grid 112 can be formed with one or more legs 120 in a desired pattern.
- Shunts 130 include one or more shunting bars 134.
- the resistive grid has a number of edges 114, 115, 116 and 117. In this embodiment, the shunts 130 can be disposed on one or more edges of the resistive grid.
- the resistance of the resistive grid 112 is adjusted by changing the length of the grid to alter the resistance towards the target value. This is accomplished by severing one or more of the shunts 130 to create a discontinuity. This exposes additional portions of the resistive grid 112 to the current path between terminal pads 140. The resistance of the grid is checked after each shunt is severed until the resistance is in the desired range. Severed shunts are identified by reference number 132 in Figure 2. Terminal pads 140 are used for measuring the resistance of resistive grid 120 during the calibration procedure.
- the severing of a shunt 130 can be performed by a variety of techniques including: chemical agents, electro-chemical agents, metal cutting, a laser beam, sand blasting or the like.
- One or more shunts 130 are opened until the target resistance is within a desired range ( ⁇ a percentage range or ppm).
- Figures 3a, 3b and 4 show other embodiments where shunts are formed internally within the resistive grid rather than at the edges.
- Figures 3a, 3b and 4 illustrate a portion of the resistive grid 120a, 120b, 120c that generally correspond to the leg 120 shown in Figures 1 and 2.
- the resistive grid is formed with one or more openings 132a, 132b, 132c or discontinuities in the resistive pattern that connect by shunting bars.
- the openings or voids 132a, 132b, 132c are shown as rectangular and circular respectively. It is understood that a wide variety of geometric shapes could be used without departing from the scope of this disclosure.
- Shunting bars 134a, 134b, 134c are disposed between and connect the voids 132a, 132b, 132c. It is understood that internal shunts can be formed in any portion of the resistive grid.
- Figures 3a and 3b show a portion of a resistive grid 120a, 120b with internal shunt bars 134a, 134b formed in protrusions 136, 138 formed in the resistive grid. It is understood that the protrusions 136, 138 can be formed in a variety of shapes without departing from the scope of this disclosure.
- Figure 4 shows a portion of a resistive grid with internal shunt bars 134c formed wholly within a portion of the resistive grid. It is understood that shunt configurations shown in Figures 1-4 can be combined in a single device.
- the structures disclosed herein have a variety of desirable attributes.
- the shunts as disclosed do not introduce instability or TCR change because the resistive element does not undergo additional etching or cold working. Resistance adjustment by etching of the resistive surface removes the oxide and during re-oxidation the gage changes value with time.
- the embodiments disclosed herein do not remove surface oxides. Furthermore, both etching and surface abrading is time consuming and very delicate, hence expensive and there is a danger to produce a reject: a strain gage that is open or that has a resistance value that has been adjusted too high. The embodiments disclosed herein address these problems as well.
Abstract
Strain gage resistance calibration using shunts. The strain gage includes an insulating, substrate. A resistive grid is formed on the substrate. A plurality of shunts are associated with the resistive grid, each of the shunts include one or more shunting bars. Severing a shunting bar alters (e.g., increases) the resistance of the resistive grid. Severing of the shunting bars can be performed by: chemical etching, electro-chemical etching, a laser beam, metal cutting and particle blasting. Shunting bars can be located on at least one edge of the resistive grid or in an internal area within the resistive grid. In a preferred embodiment, the insulating substrate is flexible.
Description
[0001] STRAIN GAGE RESISTANCE CALIBRATION USING SHUNTS
[0002] CROSS REFERENCE TO RELATED APPLICATIONS
[0003] This application claims the benefit of U.S. provisional application
Nos. 61/357,753, filed June 23, 2010 and 61/359,096 filed June 28, 2010, the contents of which are hereby incorporated by reference herein.
[0004] FIELD OF INVENTION
[0005] The present disclosure relates to strain gages and more particularly, to strain gages including shunts for calibration.
[0006] BACKGROUND
[0007] Increasing a device's resistance value using shunts is shown in US
Patent No. 4,172,249 where a resistive foil material is deposited by cemented on a rigid substance, usually a ceramic. A photoetched pattern of resistive lines is formed with shunts so that the total resistance can be increased by opening one or more of the shunts until the desired resistance value is obtained. Mechanical or thermal strains will produce resistance changes rendering the resistor unstable. Therefore, the resistor must be insulated from mechanical or thermal strain so as to maintain the resistance stable. To accomplish this, the resistor is enrobed in a flexible rubber, and then it is encapsulated by an epoxy resin. Any outside force (mechanical or thermal) does not deform the resistor because of its rubber and epoxy protections. Sometimes, to insulate the resistor from outside forces, the resistor is put into a metal case with oil surrounding the resistor. Thus, the resistor is meant to be stable and its resistance should not respond to or be altered by outsides forces.
[0008] A strain gage is a device used to measure the strain of an object subject to a force. The most common type of strain gage consists of a very thin insulating backing which supports a very thin resistive grid. A typical strain gage looks like a postage stamp. When the strain gage is bonded to a structure (e.g., a wing of an airplane) and the structure is deformed the resistance of the
strain gage changes its Ohmic value as a function of the strain due to deformation. Thus, a strain gage differs from the known resistive device in that the application of force to the surface where the strain gage is mounted results in a change to the resistive value of the strain gage.
[0009] When manufactured through photoetching of a resistive grid, strain gages have an initial or first resistance value that is set below a desired target resistance value. The final adjustment or calibration of the resistive grid to the target resistance value (e.g., 120 or 350 Ohms) is done by abrading or etching the grid which reduces the thickness of the strain gage. The reduction of the thickness increases the resistance until the value arrives at the desired target resistance value. Adjustment by etching of the resistive surface removes the oxide and during re-oxidation the strain gage changes value with time. Rubbing of the resistive surface in addition to removing the oxide, produces cold working of the metal, hence changing the temperate coefficient of resistance (TCR) and introduces instability, due to changes in resistance value with time. There is, therefore, a need for structures and methods for adjusting strain gage resistance without using rubbing or etching techniques.
[0010] SUMMARY
[0011] A resistive grid is formed on an insulating substrate. A plurality of shunts are associated with the resistive grid, each of the shunts include one or more shunting bars. Severing a shunting bar alters (e.g., increases) the resistance of the resistive grid. Severing of one or more shunting bars can be performed by: chemical etching, electro-chemical etching, a laser beam, metal cutting and particle blasting. Shunting bars can be located on at least one edge of the resistive grid or in a defined internal area within the resistive grid.
[0012] BRIEF DESCRIPTION OF THE DRAWINGS
[0013] A more detailed understanding may be had from the following description, given by way of example in conjunction with the accompanying drawings:
[0014] Figure 1 shows a strain gage with shunts disposed on multiple edges of a resistive grid;
[0015] Figure 2 shows the strain gage with trimmed shunts;
[0016] Figures 3a and 3b show a portion of a resistive grid with internal shunts formed in a protrusion formed in the resistive grid; and
[0017] Figure 4 shows a portion of a resistive grid with internal shunts formed in the internal area of the resistive grid.
[0018] DETAILED DESCRIPTION
[0019] Before explaining embodiments of the invention in detail, it is understood that the invention is not limited in its application to the details of construction and the arrangement of the components set forth in the host description or illustrated in the drawings.
[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the invention belongs. The methods and examples provided herein are illustrative only and not intended to be limiting.
[0021] This disclosure provides an innovative structure and method for calibrating a strain gage. Figure 1 shows an exemplary strain gage 100, having multiple shunts 130 providing a variety of trimming or severing options. Figure 2 shows the exemplary strain gage 100 including a number of shunts that have been trimmed to form trimmed shunts 132. The preferred strain gage 100 includes a flexible insulating substrate 110, a resistive grid 112 extending between terminal pads 140 and shunts 130. The resistive grid 112 can be formed with one or more legs 120 in a desired pattern. Shunts 130 include one or more shunting bars 134. The resistive grid has a number of edges 114, 115, 116 and 117. In this embodiment, the shunts 130 can be disposed on one or more edges of the resistive grid.
[0022] During calibration, the resistance of the resistive grid 112 is adjusted by changing the length of the grid to alter the resistance towards the target value. This is accomplished by severing one or more of the shunts 130 to
create a discontinuity. This exposes additional portions of the resistive grid 112 to the current path between terminal pads 140. The resistance of the grid is checked after each shunt is severed until the resistance is in the desired range. Severed shunts are identified by reference number 132 in Figure 2. Terminal pads 140 are used for measuring the resistance of resistive grid 120 during the calibration procedure.
[0023] The severing of a shunt 130 can be performed by a variety of techniques including: chemical agents, electro-chemical agents, metal cutting, a laser beam, sand blasting or the like. One or more shunts 130 are opened until the target resistance is within a desired range ( ± a percentage range or ppm).
[0024] It should be noted that the operation of severing a shunt 130, to form a severed shunt 132 is a very quick operation that can take about 0.001 seconds, for example, when using a laser beam.
[0025] It is understood that other shunt configurations are possible. For example, Figures 3a, 3b and 4 show other embodiments where shunts are formed internally within the resistive grid rather than at the edges. Figures 3a, 3b and 4 illustrate a portion of the resistive grid 120a, 120b, 120c that generally correspond to the leg 120 shown in Figures 1 and 2. In these embodiments, the resistive grid is formed with one or more openings 132a, 132b, 132c or discontinuities in the resistive pattern that connect by shunting bars. The openings or voids 132a, 132b, 132c are shown as rectangular and circular respectively. It is understood that a wide variety of geometric shapes could be used without departing from the scope of this disclosure. Shunting bars 134a, 134b, 134c are disposed between and connect the voids 132a, 132b, 132c. It is understood that internal shunts can be formed in any portion of the resistive grid.
[0026] Figures 3a and 3b show a portion of a resistive grid 120a, 120b with internal shunt bars 134a, 134b formed in protrusions 136, 138 formed in the resistive grid. It is understood that the protrusions 136, 138 can be formed in a variety of shapes without departing from the scope of this disclosure. Figure 4 shows a portion of a resistive grid with internal shunt bars 134c formed wholly
within a portion of the resistive grid. It is understood that shunt configurations shown in Figures 1-4 can be combined in a single device.
[0027] The structures disclosed herein have a variety of desirable attributes. The shunts as disclosed do not introduce instability or TCR change because the resistive element does not undergo additional etching or cold working. Resistance adjustment by etching of the resistive surface removes the oxide and during re-oxidation the gage changes value with time. The embodiments disclosed herein do not remove surface oxides. Furthermore, both etching and surface abrading is time consuming and very delicate, hence expensive and there is a danger to produce a reject: a strain gage that is open or that has a resistance value that has been adjusted too high. The embodiments disclosed herein address these problems as well.
[0028] Although features and elements are described above in particular combinations, each feature or element can be used alone without the other features and elements or in various combinations with or without other features and elements. The invention being thus described in terms of embodiments and examples, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the claims.
Claims
1. A strain gage comprising:
an insulating substrate;
a resistive grid formed on the insulating substrate; and
a plurality of shunts that are associated with the resistive grid with at least one shunting bar between at least two shunts to permit the resistance value to be varied to the desired application of the strain gage.
2. The strain gage of claim 1 wherein a severed shunting bar alters the resistance of the resistive grid.
3. The strain gage of claim 1 wherein a severed shunting bar increases the resistance of the resistive grid.
4. The strain gage of claim 2 wherein the shunting bar is severed by a method selected from the group including a chemical agent, electro-chemical agent, a laser beam, metal cutting and particle blasting.
5. The strain gage of claim 4 wherein the shunting bar is severed within about 0.001 seconds.
6. The strain gage of claim 1 wherein the resistive grid has a plurality of edges and at least one shunting bar is located on at least one edge of the resistive grid.
7. The strain gage of claim 1 wherein the resistive grid has a defined internal area and at least one shunting bar is located within the defined internal area.
8. The strain gage of claim 7 wherein at least one shunt is defined by a pair of associated discontinuities formed in the resistive grid.
9. The strain gage of claim 1 wherein the insulating substrate is flexible.
10. The strain gage of claim 1 wherein the substrate deforms as a result of an applied force.
11. A method for manufacturing a strain gage, the method comprising:
providing an insulating substrate;
forming a resistive grid on the flexible substrate; and
forming a plurality of shunts in the resistive grid, each of the shunts including at least one shunting bar.
12. The method of claim 11 wherein a severed shunting bar alters the resistance of the resistive grid.
13. The method of claim 11, wherein a severed shunting bar increases the resistance of the resistive grid.
14. The method of claim 11 wherein a shunting bar is severed by a method selected from the group including a chemical agent, electro-chemical, a laser beam, metal cutting and particle blasting.
15. The method of claim 11 wherein the severing of the shunting bar is performed within about 0.001 seconds.
16. The method of claim 11 wherein the resistive grid is formed with a plurality of edges and at least one shunting bar is located on at least one side of the resistive grid.
17. The method of claim 11 wherein the resistive grid has defined internal area and at least one shunting bar is located within the defined internal area.
18. The method of claim 11 wherein at least one shunt is formed with a pair of associated discontinuities in the resistive grid.
19. A method of calibrating a strain gage, the method comprising: providing a flexible substrate;
providing a resistive grid formed on the flexible substrate, the resistive grid having a first resistance;
providing a plurality of shunts associated with the resistive grid, each of the shunts including one or more shunting bars; and
severing shunting bars to alter the first resistance of the resistive grid and achieve a target resistance range.
20. The method of claim 19 wherein the resistance of the resistive grid is altered by severing a shunting bar.
21. The method of claim 19 wherein the resistance of the resistive grid iis increased by severing a shunting bar.
22. The method of claim 19 wherein severing of the shunting bars is accomplished by a method selected from the group including a chemical agent, electro-chemical agent, a laser beam, metal cutting and particle blasting.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35775310P | 2010-06-23 | 2010-06-23 | |
| US61/357,753 | 2010-06-23 | ||
| US35909610P | 2010-06-28 | 2010-06-28 | |
| US61/359,096 | 2010-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2011163442A1 true WO2011163442A1 (en) | 2011-12-29 |
Family
ID=44629463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2011/041572 WO2011163442A1 (en) | 2010-06-23 | 2011-06-23 | Strain gage resistance calibration using shunts |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2011163442A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014107597A1 (en) | 2013-01-03 | 2014-07-10 | Vishay Precision Group | Strain gages with discrete electrical resistance trimming |
| CN105004262A (en) * | 2015-08-13 | 2015-10-28 | 浙江工业大学 | Lateral deviation full-bridge double-interdigital metal strain gauge capable of measuring surface strain lateral partial derivatives |
| CN105318825A (en) * | 2015-12-04 | 2016-02-10 | 浙江工业大学 | Full-bridge three-interdigital metal strain gauge provided with six axially-distributed sensitive grids and capable of measuring axial deflection at outer sides of double-side deflected sensitive grids |
| WO2018092130A1 (en) | 2016-11-17 | 2018-05-24 | Ezmems Ltd. | High resistance strain gauges and methods of production thereof |
| CN110411332A (en) * | 2019-09-03 | 2019-11-05 | 中国工程物理研究院化工材料研究所 | A kind of system and method for test resistance gauge factor |
| WO2021055509A3 (en) * | 2019-09-17 | 2021-04-29 | Intuitive Surgical Operations, Inc. | Symmetric trimming of strain gauges |
| US11571264B2 (en) | 2007-12-18 | 2023-02-07 | Intuitive Surgical Operations, Inc. | Force sensor temperature compensation |
| US11650111B2 (en) | 2007-12-18 | 2023-05-16 | Intuitive Surgical Operations, Inc. | Ribbed force sensor |
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| US4172249A (en) | 1977-07-11 | 1979-10-23 | Vishay Intertechnology, Inc. | Resistive electrical components |
| US4322707A (en) * | 1979-04-23 | 1982-03-30 | Hottinger Baldwin Measurements, Inc. | Strain gage transducer with a foil strain gage arrangement secured to a spring |
| US5227760A (en) * | 1990-09-29 | 1993-07-13 | Toshihiro Kobayashi | Strain gage |
| JP2006234384A (en) * | 2005-02-22 | 2006-09-07 | Toshiba Hokuto Electronics Corp | Strain gauge device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4172249A (en) | 1977-07-11 | 1979-10-23 | Vishay Intertechnology, Inc. | Resistive electrical components |
| US4322707A (en) * | 1979-04-23 | 1982-03-30 | Hottinger Baldwin Measurements, Inc. | Strain gage transducer with a foil strain gage arrangement secured to a spring |
| US5227760A (en) * | 1990-09-29 | 1993-07-13 | Toshihiro Kobayashi | Strain gage |
| JP2006234384A (en) * | 2005-02-22 | 2006-09-07 | Toshiba Hokuto Electronics Corp | Strain gauge device |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11571264B2 (en) | 2007-12-18 | 2023-02-07 | Intuitive Surgical Operations, Inc. | Force sensor temperature compensation |
| US11650111B2 (en) | 2007-12-18 | 2023-05-16 | Intuitive Surgical Operations, Inc. | Ribbed force sensor |
| JP2016507742A (en) * | 2013-01-03 | 2016-03-10 | ヴィシャイ プレシジョン グループ, インコーポレイテッドVishay Precision Group, Inc. | Electrical resistance strain gauge with discrete electrical resistance trimming function |
| EP2941777A4 (en) * | 2013-01-03 | 2016-08-03 | Vishay Prec Group Inc | Strain gages with discrete electrical resistance trimming |
| US9797789B2 (en) | 2013-01-03 | 2017-10-24 | Vishay Measurements Group, Inc. | Strain gages with discrete electrical resistance trimming |
| WO2014107597A1 (en) | 2013-01-03 | 2014-07-10 | Vishay Precision Group | Strain gages with discrete electrical resistance trimming |
| CN105004262A (en) * | 2015-08-13 | 2015-10-28 | 浙江工业大学 | Lateral deviation full-bridge double-interdigital metal strain gauge capable of measuring surface strain lateral partial derivatives |
| CN105318825B (en) * | 2015-12-04 | 2018-02-02 | 浙江工业大学 | Axially distribution six sensitive grid full-bridges, three interdigital metal strain plate |
| CN105318825A (en) * | 2015-12-04 | 2016-02-10 | 浙江工业大学 | Full-bridge three-interdigital metal strain gauge provided with six axially-distributed sensitive grids and capable of measuring axial deflection at outer sides of double-side deflected sensitive grids |
| US10866151B2 (en) | 2016-11-17 | 2020-12-15 | Ezmems Ltd. | High resistance strain gauges and methods of production thereof |
| WO2018092130A1 (en) | 2016-11-17 | 2018-05-24 | Ezmems Ltd. | High resistance strain gauges and methods of production thereof |
| CN110411332A (en) * | 2019-09-03 | 2019-11-05 | 中国工程物理研究院化工材料研究所 | A kind of system and method for test resistance gauge factor |
| WO2021055509A3 (en) * | 2019-09-17 | 2021-04-29 | Intuitive Surgical Operations, Inc. | Symmetric trimming of strain gauges |
| CN114930139A (en) * | 2019-09-17 | 2022-08-19 | 直观外科手术操作公司 | Symmetric trimming of strain gauges |
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