WO2011162504A3 - 적층형 반도체 패키지 - Google Patents

적층형 반도체 패키지 Download PDF

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Publication number
WO2011162504A3
WO2011162504A3 PCT/KR2011/004378 KR2011004378W WO2011162504A3 WO 2011162504 A3 WO2011162504 A3 WO 2011162504A3 KR 2011004378 W KR2011004378 W KR 2011004378W WO 2011162504 A3 WO2011162504 A3 WO 2011162504A3
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WIPO (PCT)
Prior art keywords
stacked
chip laminate
semiconductor package
cascade chip
connective
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PCT/KR2011/004378
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English (en)
French (fr)
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WO2011162504A2 (ko
Inventor
정진욱
김진호
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하나마이크론(주)
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Application filed by 하나마이크론(주) filed Critical 하나마이크론(주)
Priority to BR112012032559A priority Critical patent/BR112012032559A2/pt
Priority to US13/805,992 priority patent/US20130099393A1/en
Publication of WO2011162504A2 publication Critical patent/WO2011162504A2/ko
Publication of WO2011162504A3 publication Critical patent/WO2011162504A3/ko

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    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/48147—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked with an intermediate bond, e.g. continuous wire daisy chain
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
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    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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    • H01L2225/06503—Stacked arrangements of devices
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    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/181—Encapsulation

Abstract

적층형 반도체 패키지를 제공한다. 본 발명은 제1접속패드와 제2접속패드가 상부면에 구비되는 기판; 상기 기판상에 탑재되고 상기 제1접속패드와 제1도전성 와이어를 매개로 와이어본딩되는 제1본딩패드가 외부노출되도록 복수개의 제1반도체칩이 다단으로 적층되는 제1캐스캐이드 칩적층체; 상기 제2접속패드와 제2도전성 와이어를 매개로 와이어본딩되는 제2본딩패드가 상기 제1본딩패드와 대응하는 영역으로 외부노출되도록 복수개의 제2반도체칩이 다단으로 적층되는 제2캐스캐이드 칩적층체; 및 상기 제1캐스캐이드 칩적층체와 제2캐스캐이드 칩적층체사이를 접합하는 접합부를 포함한다.
PCT/KR2011/004378 2010-06-22 2011-06-15 적층형 반도체 패키지 WO2011162504A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
BR112012032559A BR112012032559A2 (pt) 2010-06-22 2011-06-15 encapsulamento de semicondutores empilhados
US13/805,992 US20130099393A1 (en) 2010-06-22 2011-06-15 Stacked Semiconductor Package

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0059140 2010-06-22
KR1020100059140A KR20110138945A (ko) 2010-06-22 2010-06-22 적층형 반도체 패키지

Publications (2)

Publication Number Publication Date
WO2011162504A2 WO2011162504A2 (ko) 2011-12-29
WO2011162504A3 true WO2011162504A3 (ko) 2012-04-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/004378 WO2011162504A2 (ko) 2010-06-22 2011-06-15 적층형 반도체 패키지

Country Status (4)

Country Link
US (1) US20130099393A1 (ko)
KR (1) KR20110138945A (ko)
BR (1) BR112012032559A2 (ko)
WO (1) WO2011162504A2 (ko)

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US8653646B2 (en) 2011-10-03 2014-02-18 Invensas Corporation Stub minimization using duplicate sets of terminals for wirebond assemblies without windows
US8405207B1 (en) * 2011-10-03 2013-03-26 Invensas Corporation Stub minimization for wirebond assemblies without windows
KR101994930B1 (ko) * 2012-11-05 2019-07-01 삼성전자주식회사 일체형 단위 반도체 칩들을 갖는 반도체 패키지
US9412722B1 (en) * 2015-02-12 2016-08-09 Dawning Leading Technology Inc. Multichip stacking package structure and method for manufacturing the same
US9490195B1 (en) 2015-07-17 2016-11-08 Invensas Corporation Wafer-level flipped die stacks with leadframes or metal foil interconnects
US9825002B2 (en) 2015-07-17 2017-11-21 Invensas Corporation Flipped die stack
US9871019B2 (en) 2015-07-17 2018-01-16 Invensas Corporation Flipped die stack assemblies with leadframe interconnects
KR101961377B1 (ko) * 2015-07-31 2019-03-22 송영희 에지에 사이드 패드를 포함하는 ｌｇａ 반도체 패키지
US9484080B1 (en) 2015-11-09 2016-11-01 Invensas Corporation High-bandwidth memory application with controlled impedance loading
US9508691B1 (en) 2015-12-16 2016-11-29 Invensas Corporation Flipped die stacks with multiple rows of leadframe interconnects
US10340213B2 (en) * 2016-03-14 2019-07-02 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US10566310B2 (en) 2016-04-11 2020-02-18 Invensas Corporation Microelectronic packages having stacked die and wire bond interconnects
US9728524B1 (en) * 2016-06-30 2017-08-08 Invensas Corporation Enhanced density assembly having microelectronic packages mounted at substantial angle to board
US10276545B1 (en) 2018-03-27 2019-04-30 Powertech Technology Inc. Semiconductor package and manufacturing method thereof
JP7042713B2 (ja) * 2018-07-12 2022-03-28 キオクシア株式会社 半導体装置
KR102592327B1 (ko) 2018-10-16 2023-10-20 삼성전자주식회사 반도체 패키지
JP7293142B2 (ja) * 2020-01-07 2023-06-19 東芝デバイス＆ストレージ株式会社 半導体装置
KR20220015066A (ko) * 2020-07-30 2022-02-08 삼성전자주식회사 멀티-칩 패키지

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JP2009194294A (ja) * 2008-02-18 2009-08-27 Toshiba Corp 積層型半導体装置

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Also Published As

Publication number Publication date
US20130099393A1 (en) 2013-04-25
WO2011162504A2 (ko) 2011-12-29
BR112012032559A2 (pt) 2016-11-22
KR20110138945A (ko) 2011-12-28

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