WO2011162470A3 - 리드선이 개량된 다이오드 패키지 및 그 제조방법 - Google Patents

리드선이 개량된 다이오드 패키지 및 그 제조방법 Download PDF

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Publication number
WO2011162470A3
WO2011162470A3 PCT/KR2011/001978 KR2011001978W WO2011162470A3 WO 2011162470 A3 WO2011162470 A3 WO 2011162470A3 KR 2011001978 W KR2011001978 W KR 2011001978W WO 2011162470 A3 WO2011162470 A3 WO 2011162470A3
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WO
WIPO (PCT)
Prior art keywords
lead wire
diode package
manufacturing
method therefor
improved lead
Prior art date
Application number
PCT/KR2011/001978
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English (en)
French (fr)
Other versions
WO2011162470A2 (ko
Inventor
김재구
Original Assignee
Kim Jae Ku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kim Jae Ku filed Critical Kim Jae Ku
Priority to US13/805,666 priority Critical patent/US9065030B2/en
Priority to CN201180030496.1A priority patent/CN103038878B/zh
Publication of WO2011162470A2 publication Critical patent/WO2011162470A2/ko
Publication of WO2011162470A3 publication Critical patent/WO2011162470A3/ko

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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Abstract

본 발명에 따른 다이오드 패키지는 상부 리드선(130)과 하부 리드선(140)은 길이가 긴 납작한 판 형태를 하여 서로 대향하는 제1단과 제2단을 각각 가지며, 다이오드 칩(110)의 윗면에는 상부 리드선(130)의 제1단의 아랫면이 부착되고, 다이오드 칩(110)의 아랫면에는 하부 리드선(140)의 제1단의 윗면이 부착되며, 상부 리드선(130)의 제2단과 하부 리드선(140)의 제2단이 몰딩 컴파운드(120)의 측방향으로 외부 인출되는 것을 특징으로 한다. 상부 리드선(130)의 제1단에는 위에서 밑으로 반구형으로 오목하게 함몰되어 밑으로 반구형으로 돌출되는 반구형 접촉구(132)가 형성되는 것이 바람직하며, 이 경우 반구형 접촉구(132)의 중앙에는 관통공(133)이 형성된다.
PCT/KR2011/001978 2010-06-21 2011-03-23 리드선이 개량된 다이오드 패키지 및 그 제조방법 WO2011162470A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/805,666 US9065030B2 (en) 2010-06-21 2011-03-23 Diode package having improved lead wire and manufacturing method thereof
CN201180030496.1A CN103038878B (zh) 2010-06-21 2011-03-23 改进引线的二极管包及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0058818 2010-06-21
KR1020100058818A KR101101018B1 (ko) 2010-06-21 2010-06-21 리드선이 개량된 다이오드 패키지 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2011162470A2 WO2011162470A2 (ko) 2011-12-29
WO2011162470A3 true WO2011162470A3 (ko) 2012-02-16

Family

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Application Number Title Priority Date Filing Date
PCT/KR2011/001978 WO2011162470A2 (ko) 2010-06-21 2011-03-23 리드선이 개량된 다이오드 패키지 및 그 제조방법

Country Status (5)

Country Link
US (1) US9065030B2 (ko)
KR (1) KR101101018B1 (ko)
CN (1) CN103038878B (ko)
TW (1) TWI424549B (ko)
WO (1) WO2011162470A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190097524A1 (en) * 2011-09-13 2019-03-28 Fsp Technology Inc. Circuit having snubber circuit in power supply device
US10032726B1 (en) * 2013-11-01 2018-07-24 Amkor Technology, Inc. Embedded vibration management system
KR20160028014A (ko) 2014-09-02 2016-03-11 삼성전자주식회사 반도체 소자 패키지 제조방법

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JPH09219481A (ja) * 1997-03-17 1997-08-19 Rohm Co Ltd 面実装型ダイオードの製造方法
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JPH0982865A (ja) * 1995-09-08 1997-03-28 Canon Inc リード端子付きチップダイオード及びこれを用いた太陽電池モジュール
JPH09219481A (ja) * 1997-03-17 1997-08-19 Rohm Co Ltd 面実装型ダイオードの製造方法
JP2003347491A (ja) * 2002-05-28 2003-12-05 Renesas Technology Corp 半導体装置
US20080224285A1 (en) * 2007-03-12 2008-09-18 Lim Seung-Won Power module having stacked flip-chip and method of fabricating the power module

Also Published As

Publication number Publication date
CN103038878B (zh) 2016-02-24
TWI424549B (zh) 2014-01-21
WO2011162470A2 (ko) 2011-12-29
US20130087826A1 (en) 2013-04-11
KR101101018B1 (ko) 2011-12-29
US9065030B2 (en) 2015-06-23
CN103038878A (zh) 2013-04-10
TW201205763A (en) 2012-02-01
KR20110138749A (ko) 2011-12-28

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