WO2011162236A1 - Substrat, procédé de production du substrat et élément photo-émetteur - Google Patents

Substrat, procédé de production du substrat et élément photo-émetteur Download PDF

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WO2011162236A1
WO2011162236A1 PCT/JP2011/064128 JP2011064128W WO2011162236A1 WO 2011162236 A1 WO2011162236 A1 WO 2011162236A1 JP 2011064128 W JP2011064128 W JP 2011064128W WO 2011162236 A1 WO2011162236 A1 WO 2011162236A1
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substrate
light emitting
sintered body
polishing
spinel
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PCT/JP2011/064128
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English (en)
Japanese (ja)
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茂 中山
裕 辻
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住友電気工業株式会社
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Priority to JP2012521472A priority Critical patent/JP5838965B2/ja
Priority to CN201180030057.0A priority patent/CN102947246B/zh
Publication of WO2011162236A1 publication Critical patent/WO2011162236A1/fr

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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S5/00—Semiconductor lasers
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    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present invention relates to a substrate, a method for manufacturing the substrate, and a light emitting element, and more particularly to a substrate for a light emitting element, a method for manufacturing the same, and a light emitting element using the substrate.
  • a light emitting element such as a light emitting diode (LED) usually has a structure in which a stacked structure of semiconductor layers including a light emitting region is formed on one main surface of a substrate, for example, by epitaxial growth.
  • a substrate made of sapphire may be used as the substrate.
  • a light-emitting element using a sapphire substrate is superior in characteristics such as luminance, contrast, and conductivity of emitted light as compared to a light-emitting element using a substrate made of silicon carbide, for example. For this reason, a light emitting element using a sapphire substrate is generally widely known.
  • a light emitting element using a sapphire substrate is disclosed in, for example, Japanese Patent Application Laid-Open No. 2005-79171 (Patent Document 1).
  • the light emitting element which consists of a sapphire substrate has the problem that cost becomes high.
  • the present invention has been made in view of the above problems.
  • the object is to provide a substrate capable of forming a light-emitting element that is less expensive than a light-emitting element made of a sapphire substrate, and a method for manufacturing the same.
  • Another object is to provide a light emitting element using the substrate.
  • the substrate according to the present invention is a substrate for a light emitting element made of spinel.
  • spinel which is mainly used in the field of optical elements, instead of sapphire, as a substrate used for light-emitting elements such as the above-described light-emitting diodes.
  • Physical property values such as the strength of spinel are close to physical property values such as the strength of sapphire. It has been found that a substrate for a light-emitting element formed using spinel can withstand practical use as well as a substrate for a light-emitting element made of sapphire.
  • a light-emitting element substrate made of spinel is not equivalent to a light-emitting element substrate made of sapphire, but exhibits a level of strength (Young's modulus) that is practically acceptable.
  • the spinel has a thermal conductivity level that causes no problem in practice because it dissipates heat generated by the light emitting region in the light emitting element.
  • the spinel substrate is a composite oxide having a spinel crystal structure with a composition of MgO.nAl 2 O 3 (1.05 ⁇ n ⁇ 1.30), and the content of Si element is 20 ppm or less.
  • a certain sintered body is preferable.
  • the sintered body preferably has a linear transmittance of 80% or more with a light beam having a thickness of 1 mm and a wavelength of 350 nm to 450 nm. In this way, it is possible to obtain a good light transmittance of the substrate made of the spinel that is a polycrystalline body.
  • the spinel substrate has a main surface, and when a plurality of square regions of 5 mm in length and 5 mm in width are set for the main surface, the outer surface of the main surface is within a range of 3 mm from the plurality of regions.
  • the PLTV Percent LTV indicating the ratio of the evaluation target area where the LTV (Local Thickness Variation) is 1.0 ⁇ m or less is 90% or more for a plurality of evaluation target areas excluding the entering area. preferable. If the PLTV is at least 90%, even a spinel substrate that is a polycrystalline body can directly bond a semiconductor layer constituting a light emitting element to the main surface of the substrate without using an adhesive material. Therefore, by using this substrate, a light-emitting element with excellent characteristics can be obtained.
  • the substrate manufacturing method according to the present invention is for a light-emitting element made of spinel having a composition of MgO.nAl 2 O 3 (1.05 ⁇ n ⁇ 1.30) and a Si element content of 20 ppm or less.
  • This is a method for manufacturing the substrate.
  • a substrate as a spinel sintered body having a composition of MgO.nAl 2 O 3 (1.05 ⁇ n ⁇ 1.30) and a Si element content of 20 ppm can be formed.
  • substrate is equipped with intensity
  • the first sintering step is performed at a pressure of 50 Pa or less, and the shortest thickness from the center of the sintered body to the outside of the sintered body is D (mm), and the temperature reaches from 1000 ° C. to the maximum temperature.
  • D a ⁇ t 1/2 0.1 ⁇ a ⁇ 3 It is preferable to have the following relationship.
  • the temperature of the first sintering step is raised under the above conditions, the content of Si element can be reduced to 20 ppm or less after the sintering step is finished, and as a result, a high light transmittance spinel. A sintered body can be obtained. Therefore, a high light transmittance can be obtained in a spinel substrate used for a light-emitting element.
  • the method for manufacturing the substrate further includes a step of slicing the sintered body and a step of polishing the surface of the substrate obtained by the slicing step using a chemical mechanical polishing method after the second sintering step.
  • the substrate may be polished in a state where the substrate is sandwiched between the polishing pad disposed on the surface plate and the polishing head disposed to face the polishing pad.
  • a soft layer having a lower hardness than the polishing head is disposed between the polishing head and the substrate. In this case, the flatness of the substrate can be improved. As a result, a substrate capable of bonding a semiconductor layer to the main surface can be obtained.
  • a light-emitting element includes the above-described spinel substrate and a semiconductor layer disposed on one main surface of the substrate and including a light-emitting layer.
  • a light-emitting element having a function equivalent to that of a light-emitting element using a sapphire substrate can be provided at a lower cost.
  • the substrate and the semiconductor layer may be bonded.
  • the substrate and the semiconductor layer may be bonded using a transparent adhesive material, or the substrate and the semiconductor layer may be bonded directly using a surface activation method or the like. In this manner, a light-emitting element having excellent characteristics can be obtained by bonding a semiconductor layer having favorable crystallinity to a substrate.
  • a light emitting element having a function equivalent to that of a light emitting element using a sapphire substrate can be provided at a lower cost. Further, the transmission characteristics of the substrate can be ensured.
  • FIG. 8 is a flowchart for explaining a method of manufacturing the light emitting device shown in FIG. It is a schematic diagram for demonstrating the bonding process shown in FIG. It is a schematic diagram for demonstrating the bonding process shown in FIG. It is a schematic sectional drawing which shows Embodiment 4 of the light emitting element by this invention. It is a schematic diagram for demonstrating the bonding process shown in FIG. It is a schematic diagram for demonstrating the bonding process shown in FIG. Sample No. It is the schematic diagram which showed the state of the unevenness
  • Sample No. 4 is a photograph showing an appearance of a bonded substrate using the substrate No. 4;
  • the substrate 10 of the present embodiment is a wafer made of spinel, for example, having a main surface 10a having a diameter of 4 inches.
  • An example of the composition of the spinel constituting the substrate 10 is MgO.nAl 2 O 3 .
  • the substrate 10 is used for a light emitting element 30 such as an LED having the configuration shown in FIG. 2 includes, for example, a buffer layer 1, an n-type GaN (gallium nitride) layer 2, an n-type AlGaN (aluminum gallium nitride) layer 3, a multiple quantum well 4, and a p-type AlGaN on a main surface 10a of a substrate 10.
  • a buffer layer 1 an n-type GaN (gallium nitride) layer 2
  • an n-type AlGaN (aluminum gallium nitride) layer 3 a multiple quantum well 4
  • a p-type AlGaN on a main surface 10a of a substrate 10.
  • the semiconductor layer including the layer 5 and the p-type GaN layer 6 is stacked in this order.
  • the buffer layer 1 is arranged to suppress the lattice mismatch between the lattice constant of the spinel constituting the substrate 10 and the compound semiconductor lattice constant constituting the compound semiconductor thin film such as the n-type GaN layer 2.
  • the thin film is preferably composed of, for example, InGaN (indium nitride / gallium compound).
  • the multiple quantum well 4 is a light emitting region (light emitting layer) of the LED.
  • a plurality of ultrathin layers of In 0.2 Ga 0.8 N and ultra thin films of Al 0.2 Ga 0.8 N are alternately arranged.
  • a laminated structure is preferred.
  • the buffer layer 1 and the semiconductor layer composed of the n-type GaN layer 2, the n-type AlGaN layer 3, the multiple quantum well 4, the p-type AlGaN layer 5, and the p-type GaN layer 6 are preferably formed in this order by, for example, epitaxial growth. .
  • a part thereof specifically, a part of the n-type GaN layer 2, and an n-type AlGaN layer 3, a multiple quantum well 4, a p-type AlGaN layer 5,
  • the p-type GaN layer 6 is removed by etching. In this way, a part of the main surface of the n-type GaN layer 2 and the main surface of the p-type GaN layer 6 are exposed.
  • the n-type electrode 7 and the p-type electrode 8 are formed on the partially exposed main surfaces of the n-type GaN layer 2 and the p-type GaN layer 6 using a metal material that makes ohmic contact with the main surfaces. .
  • the light emitting element 30 shown in FIG. 2 is formed by the above procedure.
  • the light emitting element 30 conducts between the n-type electrode 7 and the p-type electrode 8, recombination of holes and electrons occurs in the multiple quantum well 4, which is a light emitting layer, and a light emission phenomenon occurs.
  • the light can be emitted (transmitted) from the back side of the substrate 10 (the main surface below the substrate 10 in FIG. 2). This is because the spinel constituting the substrate 10 can transmit the light emitted from the light emitting element 30.
  • the substrate 10 When the light is transmitted through the substrate 10, the light emitting element 30 including the substrate 10 generates heat. For this reason, considerable stress is applied to the substrate 10 and other semiconductor layers. That is, when the light emitting element 30 operates, the substrate 10 generates heat, and the heat is transmitted to the substrate 10. That is, at this time, thermal stress is generated in the substrate 10. For this reason, the substrate 10 preferably has a corresponding strength.
  • the structure has a high strength when the Young's modulus is high, and the strength is low when the Young's modulus is low. Therefore, the substrate 10 preferably has a Young's modulus of 150 GPa or more and 350 GPa or less in order to have strength that can withstand use under the above-described conditions. When the Young's modulus of the substrate 10 is 150 GPa or more, the substrate 10 has a strength that can withstand use under the above conditions. In general, the structure has a high hardness when the Young's modulus is high, and the hardness is low when the Young's modulus is low.
  • the Young's modulus of the substrate 10 exceeds 350 GPa, the hardness of the substrate 10 becomes excessively high, so that the possibility of causing chipping increases. Further, since the hardness of the substrate 10 becomes excessively high, processing becomes difficult. Therefore, the Young's modulus of the substrate 10 is preferably within the above range from the viewpoint of having appropriate strength and suppressing problems such as chipping, and the most preferable range is 180 GPa or more and 300 GPa or less. It can be said.
  • the strength of the substrate 10 of the light emitting element 30 is not equivalent to that of an LED substrate made of sapphire, but is a level that does not cause any practical problems even when used as a substrate for the light emitting element 30 instead of sapphire. Therefore, even if the spinel substrate 10 is used for the light emitting element 30 instead of the sapphire substrate, a function equivalent to that of the LED substrate made of the sapphire substrate can be secured. Therefore, by using the spinel substrate 10, the light emitting element 30 such as an LED can be formed at a lower cost than when a sapphire substrate is used.
  • the spinel sintered body constituting the substrate 10 has a composition of MgO.nAl 2 O 3 (1.05 ⁇ n ⁇ 1.30) and a Si element content of 20 ppm or less.
  • This spinel sintered body has a linear transmittance of visible light having a wavelength of 350 nm or more and 450 nm or less at a thickness of 1 mm, preferably 80% or more, more preferably 82% or more, and particularly preferably 84% or more. Yes, the linear transmittance is sufficiently high. In addition, high light transmittance can be stably obtained, and variation is small. Further, even with a thick material, a stable and high transmittance for visible light can be obtained.
  • the spinel sintered body is a composite oxide having a spinel crystal structure with a composition of MgO.nAl 2 O 3 (1.05 ⁇ n ⁇ 1.30), and includes MgO and Al 2 O 3 as components. Since the spinel sintered body has a cubic crystal form, light scattering at the crystal grain boundary hardly occurs, and good light transmission is obtained when sintered at high density.
  • 1.05 ⁇ n ⁇ 1.30 it is possible to reduce the component amount of MgO, to reduce the variation and distortion of the microscopic crystal lattice, and to improve translucency. From this viewpoint, 1.06 ⁇ n ⁇ 1.125 is preferable.
  • metal impurities are mixed.
  • the metal impurities include Si, Ti, Na, K, Ca, Fe, and C. These metal impurities are derived from the raw material powder and mixed in the sintered body.
  • the content of the Si element is 20 ppm or less, high light transmittance can be stably obtained.
  • the content of Si element is more preferably 10 ppm or less, and particularly preferably 5 ppm or less.
  • the Si element reacts with the spinel powder during sintering to generate a liquid phase.
  • This liquid phase has the effect of accelerating the sinterability of the spinel powder, but if this liquid phase remains at the grain boundary, it becomes a different phase and reduces the light transmittance.
  • the purity of MgO.nAl 2 O 3 in the spinel powder is 99.5% by mass or more, preferably 99.9% by mass or more, and more preferably 99.99% by mass or more.
  • substrate 10 of this invention is demonstrated.
  • substrate 10 which is a spinel sintered compact of this invention is a high purity spinel powder preparation process (S10), a formation process (S20), a sintering process (S30), and a process process ( S40).
  • the Si element content is 50 ppm or less, the average particle size is 0.1 ⁇ m or more and 0.3 ⁇ m or less, the purity is 99.5 mass% or more, and the composition is MgO ⁇ nAl.
  • a spinel powder that is 2 O 3 (1.05 ⁇ n ⁇ 1.30) is prepared.
  • the particle size of the powder particles is obtained by integrating the volume of the powder from the small particle size side toward the large particle size side when measured using a particle size distribution measurement method by a laser diffraction / scattering method. It means the value of the diameter of the powder cross section at the location where the cumulative volume is 50%.
  • the particle size distribution measuring method described above is a method of measuring the diameter of the powder particles by analyzing the scattering intensity distribution of the scattered light of the laser light irradiated onto the powder particles.
  • the average value of the particle diameters of the plurality of powder particles contained in the prepared spinel powder is the average particle diameter described above.
  • a molded body is formed from the spinel powder prepared in step (S10). Specifically, this is formed by press molding or CIP (Cold Isostatic Pressing). More specifically, for example, it is preferable that the powder of MgO ⁇ nAl 2 O 3 prepared in step (S10) is first preformed by press molding and then CIP is performed to obtain a compact. However, only one of press molding and CIP may be performed here, or both CIP may be performed after press molding, for example.
  • a pressure of 10 MPa to 300 MPa, particularly 20 MPa is preferably used, and in CIP, for example, a pressure of 160 MPa to 250 MPa, particularly 180 MPa to 230 MPa is preferably used.
  • the sintering step (S30) shown in FIG. 3 is performed. Specifically, it is preferable that the sintering step (S30) has two steps of a first sintering step (S31) and a second sintering step (S32) with reference to FIG.
  • the compact is sintered at 1500 ° C. or higher and 1800 ° C. or lower in vacuum to form a sintered body having a density of 95% or higher.
  • the liquid phase generated from the Si element as an impurity can be evaporated and removed in vacuum.
  • the degree of vacuum is preferably 50 Pa or less, and more preferably 20 Pa or less.
  • the conditions of the first sintering step vary depending on the amount of Si element and the thickness of the sintered body, but the shortest thickness from the center of the sintered body to the outside of the sintered body is D (mm),
  • D a ⁇ t 1/2 0.1 ⁇ a ⁇ 3 It is preferable to have the following relationship.
  • the Si element content in the spinel powder is 50 ppm or less by raising the temperature within such a range, the Si element content is reduced to 20 ppm or less after the end of the first sintering step. Therefore, a spinel sintered body having a high light transmittance can be obtained.
  • the Si element content in the spinel powder is preferably 30 ppm or less.
  • the Si element content in the sintered body is reduced by further increasing the temperature raising time in the vacuum atmosphere in the first sintering step. It is possible to do.
  • the temperature in the first sintering step is preferably 1500 ° C. or higher in terms of obtaining a high-density sintered body having a density of 95% or higher.
  • the density of the sintered body is more preferably 95% or more in terms of increasing the light transmittance of the sintered body.
  • the density refers to a relative density calculated by the Archimedes method.
  • the sintering temperature is preferably 1800 ° C. or lower in terms of suppressing evaporation of MgO in vacuum, preventing precipitation of Al 2 O 3 as the second phase during cooling, and maintaining high light transmittance. 1700 degrees C or less is more preferable, and 1650 degrees C or less is further more preferable.
  • the sintered body is subjected to pressure firing at 1600 ° C. or higher and 1900 ° C. or lower by HIP (Hot Isostatic Pressing) or the like in the second sintering step (S32).
  • HIP Hot Isostatic Pressing
  • the gas used for the HIP is preferably an inert gas such as Ar gas or N 2 gas, O 2 gas, or a mixed gas thereof. If O 2 gas is mixed, a decrease in translucency due to deoxygenation can be prevented. it can.
  • a processing step (S40) is performed on the sintered body sintered as described above, as shown in FIG. Specifically, the sintered body is first cut (cut) by MWS (Multi Wire Saw) or the like so as to have a desired thickness (of the substrate 10) (step of slicing the sintered body). Thereby, the foundation
  • the desired thickness is preferably determined in consideration of the thickness of the substrate 10 to be finally formed, the polishing margin of the main surface 10a of the substrate 10 in a later step, and the like.
  • the underlying main surface of the substrate 10 is polished. Specifically, this is a step of polishing the main surface 10a of the substrate 10 finally formed as described above so that the average roughness Ra becomes a desired value.
  • the substrate 10 as the substrate for the light emitting element is preferably polished so that the main surface 10a has the desired Ra described above.
  • the main surface 10a of the substrate 10 is polished in order to achieve excellent flatness, it is preferable to perform three stages of polishing in order: rough polishing, normal polishing, and polishing using diamond abrasive grains.
  • the main surface 10a is mirror-finished using a polishing machine.
  • the count of abrasive grains used for polishing differs between rough polishing and normal polishing.
  • the polishing as the finishing process is preferably performed using diamond abrasive grains as described above.
  • Diamond abrasive grains are extremely high in hardness, and the average grain diameter of the abrasive grains is as small as about 0.5 ⁇ m to 1.0 ⁇ m, so that they are suitable for use as abrasive grains for high-precision mirror finishing.
  • polishing is performed for 10 minutes using the abrasive grains. In this way, it is possible to realize the main surface 10a having high flatness in which the average roughness Ra of the main surface 10a described above is 0.01 nm or more and 3.0 nm or less.
  • Embodiment 2 With reference to FIG. 5, the manufacturing method of Embodiment 2 of the board
  • the manufacturing method of the substrate 10 is basically the same as the high-purity spinel powder preparation step (S10) to the processing step (S40) shown in FIG. 3, but the contents of the polishing step in the processing step (S40) are the same.
  • the department is different.
  • a polishing process as shown in FIG. 5 is performed on the base of the substrate 10 obtained by cutting the sintered body.
  • four stages of polishing are performed. Specifically, it is preferable to sequentially perform the rough polishing step (s41), the intermediate finish polishing step (S42), the finish polishing step (S43), and the CMP step (S44).
  • the main surface (front surface and back surface) of the substrate is polished using a polishing machine (for example, a double-side polishing apparatus).
  • a polishing machine for example, a double-side polishing apparatus.
  • a GC grindstone having a count of # 800 to # 2000, for example, is used.
  • the polishing amount is, for example, not less than 50 ⁇ m and not more than 200 ⁇ m.
  • an intermediate finish polishing step (S42) is performed.
  • the main surface (front surface and back surface) of the substrate is polished using, for example, a single-side polishing apparatus.
  • polishing agent the diamond abrasive grain whose particle size of an abrasive grain is 3 micrometers or more and 5 micrometers or less can be used, for example.
  • the polishing amount can be, for example, 10 ⁇ m or more and 30 ⁇ m or less.
  • a finish polishing step (S43) is performed.
  • the main surface (front surface and back surface) of the substrate is polished using, for example, a single-side polishing apparatus.
  • abrasive polishing agent
  • the diamond abrasive grain whose particle size of an abrasive grain is 0.5 micrometer or more and 1 micrometer or less can be used, for example.
  • the polishing amount can be, for example, 3 ⁇ m or more and 10 ⁇ m or less.
  • the diamond abrasive grains are very high in hardness, and the average grain diameter of the abrasive grains is very small as described above, so that they are suitable for use as high-precision mirror-finishing abrasive grains.
  • a CMP step (S44) is performed.
  • this step (S44) for example, one of the main surfaces of the substrate is polished using a CMP apparatus.
  • a slurry used for polishing a slurry having a mechanical polishing action stronger than a normal slurry for sapphire (a chemical polishing action is suppressed) is used.
  • the polishing time can be, for example, 10 minutes to 45 minutes, more preferably 15 minutes to 40 minutes.
  • the CMP apparatus includes a surface plate 42 having a circular planar shape, a polishing pad 43 disposed on the surface plate 42, and a polishing head 45 disposed to face the polishing pad 43.
  • the substrate 10 is polished in a state where the substrate 10 is sandwiched between them.
  • a soft layer 44 having a lower hardness than the polishing head 45 is disposed between the polishing head 45 and the substrate 10.
  • the substrate 10 is pressed against the polishing pad 43 by the polishing head 45 through the soft layer 44.
  • the surface plate 42 is supported by a column 41 connected to the central portion thereof.
  • the polishing head 45 is also supported by a rotating column 46 connected to the central portion of the polishing head 45. Further, the slurry 48 is supplied from the slurry supply unit 47 to the polishing pad 43.
  • the CMP apparatus having such a configuration, the flatness of the substrate 10 can be improved. Specifically, when a plurality of quadrangular regions of 5 mm in length and 5 mm in width are set on the main surface 10a of the substrate 10, a region that falls within a range of 3 mm from the outer periphery of the main surface 10a is selected from the plurality of regions.
  • the substrate 10 With respect to the plurality of evaluation target areas that are excluded portions, it is possible to obtain the substrate 10 in which the PLTV indicating the ratio of the evaluation target areas whose LTV is 1.0 ⁇ m or less is 90% or more.
  • a semiconductor layer can be easily bonded onto the main surface 10a of the substrate 10 as described above.
  • the light emitting element is a light emitting diode, and is formed on substrate 10, p-type ohmic contact epitaxial layer 16 bonded to main surface 10 a of substrate 10, and p-type ohmic contact epitaxial layer 16.
  • the n-type electrode 7 is formed on the n-type cladding layer 22.
  • the active layer 20 for example, (Al x Ga 1-x) may be formed 0.5 In 0.5 P.
  • n-type cladding layer 22 for example, n-type (Al x Ga 1-x ) 0.5 In 0.5 P may be formed.
  • suitable thicknesses of the n-type cladding layer 22, the active layer 20, and the p-type cladding layer 18 are about 0.5 ⁇ m to 3.0 ⁇ m, 0.5 ⁇ m to 2.0 ⁇ m, 0.5 ⁇ m to 3 ⁇ m, respectively. 0.0 ⁇ m or less.
  • An opening is formed by removing a part of the n-type cladding layer 22, the active layer 20, and the p-type cladding layer 18.
  • the upper surface of the p-type ohmic contact epitaxial layer 16 is exposed at the bottom of the opening.
  • a p-type electrode 8 is formed in contact with the p-type ohmic contact epitaxial layer 16 at the bottom of the opening.
  • An n-type electrode 7 is formed so as to be in contact with the surface of the n-type cladding layer 22.
  • AlGaAs, AlGaInP, or AlAsP can be used, and the energy gap of the material is larger than the energy gap of the active layer 20, and the light emitted from the active layer 20 is not absorbed (or Any material having a sufficiently low light absorption rate may be used.
  • the Al composition of the active layer 20 is approximately 0 ⁇ x ⁇ 0.45
  • the Al composition of the n-type cladding layer 22 is approximately 0.5 ⁇ x ⁇ 1
  • the Al composition of the p-type cladding layer 18 is approximately 0.5 ⁇ x.
  • composition ratio of the compound such as (Al x Ga 1-x ) 0.5 In 0.5 P described above is a suitable example, and any material and ratio of the III-V semiconductor material can be used in the present invention. Can be applied to.
  • the active layer 20 of the present invention can employ any configuration such as an SH structure, a DH structure, a multidimensional quantum well (MQW) structure, or a quantum well heterostructure (QWH).
  • a component preparation step (S100) is performed.
  • the spinel substrate 10 according to the present invention is prepared using the manufacturing method described in the second embodiment.
  • an epitaxial structure is prepared in which a semiconductor layer including an active layer 20 to be a semiconductor layer of a light emitting element is formed on an n-type GaAs substrate.
  • the epitaxial structure includes an n-type GaAs substrate 26, an etching stop layer 24 formed on the n-type GaAs substrate 26, and an n-type cladding layer formed on the etching stop layer 24.
  • an active layer 20 formed on the n-type cladding layer 22 an active layer 20 formed on the n-type cladding layer 22, a p-type cladding layer 18 formed on the active layer 20, and a p-type ohmic contact epitaxial layer 16 formed on the p-type cladding layer 18. It consists of and. Each layer described above is formed by using an epitaxial growth method.
  • any III-V compound semiconductor material may be used as the material of the etching stop layer 24, and the lattice constant may or may not be compatible with the GaAs substrate 26.
  • the etching rate of the material constituting the etching stop layer 24 is preferably much smaller than the etching rate of the GaAs substrate 26.
  • InGaP or AlGaAs is preferable as the material of the etching stop layer 24.
  • a bonding step (S110) is performed. Specifically, as shown in FIG. 9, the surface of the epitaxial structure is activated by irradiating the surface of the p-type ohmic contact epitaxial layer 16 which is a surface bonded to the substrate 10 with an ion beam 50. Instead of the ion beam 50, plasma or the like may be brought into contact with the surface.
  • the main surface 10a of the substrate 10 is brought into contact with the surface of the p-type ohmic contact epitaxial layer 16 of the epitaxial structure.
  • stress may be applied so that the main surface 10 a of the substrate 10 is pressed against the surface of the p-type ohmic contact epitaxial layer 16.
  • the substrate 10 according to the present invention exhibits excellent flatness with respect to the main surface 10a, the above-described bonding (normal temperature bonding) can be reliably performed.
  • the surface of the p-type ohmic contact epitaxial layer 16 is directly bonded to the main surface 10a of the substrate 10.
  • the surface of the p-type ohmic contact epitaxial layer 16 is connected to the main surface 10a of the substrate 10 through a transparent adhesive layer. You may adhere
  • any adhesive material such as spin-on glass (SOG), polyimide, or silicone can be used.
  • a post-processing step (S120) is performed. Specifically, the impermeable n-type GaAs substrate is removed with an etching solution such as 5H 3 PO 4 : 3H 2 O 2 : 3H 2 O or 1NH 4 OH: 35H 2 O 2 .
  • the etching stop layer 24 made of, for example, InGaP or AlGaAs may still absorb light emitted from the active layer. Therefore, it is necessary to remove the etching stop layer 24 and leave only the portion of the n-type cladding layer 22 that contacts the n-type electrode 7.
  • the etching stop layer 24 can be removed by any method such as dry etching.
  • the n-type cladding layer 22, the active layer 20, and the p-type cladding layer 18 are partially removed to expose a part of the upper surface of the p-type ohmic contact epitaxial layer 16.
  • the p-type electrode 8 is formed on the p-type ohmic contact epitaxial layer 16.
  • the n-type electrode 7 is formed on the n-type cladding layer 22. In this manner, a light emitting device having an LED structure in which the p-type and n-type ohmic contact metal layers (p-type electrode 8 and n-type electrode 7) are formed on the same side as shown in FIG. 7 can be formed. .
  • Embodiment 4 of the light emitting element by this invention is demonstrated.
  • the light emitting element is an AlGaAs red LED (emission wavelength: 650 nm), and includes substrate 10, p-type cladding layer 54 bonded to main surface 10 a of substrate 10, and p-type cladding layer 54.
  • An active layer 53 formed on the active layer 53, an n-type cladding layer 52 formed on the active layer 53, and an n-type electrode 7 and a p-type electrode 8.
  • the n-type electrode 7 is formed on the n-type cladding layer 52.
  • the p-type cladding layer 54 for example, a p-type AlGaAs layer having an Al composition of about 70 to 80% and a thickness of 0.5 to 2 ⁇ m can be used.
  • the n-type cladding layer 52 for example, an n-type AlGaAs layer having an Al composition of about 70 to 80% and a thickness of 0.5 ⁇ m to 2 ⁇ m can be used.
  • An opening is formed by removing part of the n-type cladding layer 52 and the active layer 53.
  • the upper surface of the p-type cladding layer 54 is exposed at the bottom of the opening.
  • a p-type electrode 8 is formed in contact with the p-type cladding layer 54 at the bottom of the opening.
  • the manufacturing method of the light emitting element shown in FIG. 11 is basically the same as the manufacturing method of the light emitting element shown in FIG. That is, first, the component material preparation step (S100) is performed.
  • the spinel substrate 10 according to the present invention is prepared using the manufacturing method described in the second embodiment.
  • an epitaxial structure is prepared in which a semiconductor layer including an active layer 53 to be a semiconductor layer of a light emitting element is formed on an n-type GaAs substrate.
  • the epitaxial structure includes an n-type GaAs substrate 26, an n-type cladding layer 52 formed on the n-type GaAs substrate 26, and an active layer formed on the n-type cladding layer 52. 53 and a p-type cladding layer 54 formed on the active layer 53.
  • Each layer described above is formed by using an epitaxial growth method.
  • a bonding step (S110) is performed. Specifically, as shown in FIG. 12, the surface of the epitaxial structure is activated by irradiating the surface of a p-type cladding layer 54 that is a surface to be bonded to the substrate 10 with an ion beam 50. Instead of the ion beam 50, plasma or the like may be brought into contact with the surface.
  • the main surface 10a of the substrate 10 and the surface of the p-type cladding layer 54 of the epitaxial structure are brought into contact with each other.
  • stress may be applied so that the main surface 10 a of the substrate 10 is pressed against the surface of the p-type cladding layer 54.
  • substrate 10 by this invention shows the outstanding flatness regarding the main surface 10a, it can perform the above joining reliably.
  • the surface of the p-type cladding layer 54 is directly bonded to the main surface 10a of the substrate 10.
  • the surface of the p-type cladding layer 54 is bonded to the main surface 10a of the substrate 10 through a transmissive adhesive layer. May be.
  • any adhesive material such as spin-on glass (SOG), polyimide, or silicone can be used as described in Embodiment 3.
  • a dry etching method such as RIE is applied, and the n-type cladding layer 52 and the active layer 53 are partially removed to expose a part of the upper surface of the p-type cladding layer 54.
  • the p-type electrode 8 is formed on the
  • a light-emitting element having an LED structure in which p-type and n-type ohmic contact metal layers (p-type electrode 8 and n-type electrode 7) are formed on the same side as shown in FIG. 11 can be formed.
  • the rough polishing step (S41), the intermediate finish polishing step (S42), and the final polishing step (S43) are the same processing conditions for all four sheets.
  • sample No. 1 and sample no. For No. 2 the CMP step was performed in the CMP step (S44) with the soft layer added to the surface plate side of the CMP apparatus.
  • sample no. 3 and sample no. For No. 4 a soft layer was added to the polishing head side of the CMP apparatus in the CMP process.
  • the surface accuracy of the substrate (holding substrate) prepared as described above was evaluated.
  • a wafer made of a material different from spinel was actually bonded to the main surface of the holding substrate made of spinel at room temperature, and the bonded state was visually evaluated.
  • the wafer (bonding wafer) was made of a material that transmits light in order to facilitate the evaluation of the bonded state. Specifically, LiTaO 3 was used here as a light transmissive material constituting the bonding wafer.
  • PLTV was measured on the main surface of the holding substrate using a flatness measuring / analyzing apparatus.
  • the following numerical values were used as PLTV. That is, a plurality of rectangular regions of 5 mm in length and 5 mm in width are set on the main surface of the holding substrate, and a plurality of regions excluding a region that falls within a range of 3 mm from the outer periphery of the main surface among the plurality of regions.
  • the evaluation target area (site) was assumed.
  • the ratio of the evaluation target region having an LTV (Local Thickness Variation) of 1.0 ⁇ m or less was defined as PLTV.
  • the site can be set parallel to the orientation flat. LTV can be expressed as the difference between the maximum value and the minimum value at one site height with respect to the back surface of the holding substrate.
  • the center point of the set rectangular area (site) of 5 mm x 5 mm is included in the range of 3 mm from the outer periphery of the main surface, it is excluded from the evaluation target and the center If the point is inside the range of 3 mm from the outer periphery of the main surface, it is handled as an evaluation object.
  • the warpage of each holding substrate was measured using a flatness measuring / analyzing apparatus.
  • the height from the reference surface when only the center point of the back surface of the holding substrate was fixed was measured, and the maximum value of the height was taken as the warp value.
  • the portion is more whitish than the portion in a good bonding state. The discolored part was confirmed visually.
  • FIGS. 14 to 16 show sample Nos.
  • the results of Sample No. 1 are shown in FIGS. 20 to 22 show the results of Sample No. 3 and FIG. 23 to FIG. 4 is the result.
  • FIG. 14, FIG. 17, FIG. 20, and FIG. 23 are schematic views each showing a three-dimensional state of unevenness on the main surface of the holding substrate.
  • 15, FIG. 18, FIG. 21, and FIG. 24 each of a plurality of 5 mm square regions set on the main surface of the holding substrate displays a region in which LTV is 1.0 ⁇ m or less in white, while LTV The area where the value exceeds 1.0 ⁇ m is displayed in black.
  • FIG. 19, FIG. 22, and FIG. 25 show the appearance of the substrate after bonding (bonding substrate).
  • the PLTV excluding the range of 3 mm from the outer periphery of the holding substrate was 72% and the warpage was 78 ⁇ m. Further, as can be seen from FIG. 16 showing the state where the bonding wafer is bonded, the ratio of the portion showing a good bonded state on the main surface of the holding substrate was 80%.
  • the PLTV excluding the range of 3 mm from the outer periphery of the holding substrate was 66% and the warpage was 66 ⁇ m. Further, as can be seen from FIG. 19 showing the state where the bonding wafer is bonded, the ratio of the portion showing a good bonded state on the main surface of the holding substrate was 70%.
  • the PLTV excluding the range of 3 mm from the outer periphery of the holding substrate was 92% and the warpage was 91 ⁇ m. Further, as can be seen from FIG. 22 showing the state where the bonding wafer is bonded, the ratio of the portion showing a good bonded state on the main surface of the holding substrate was 98%.
  • Example 2 Sample No. mentioned above. With respect to 1 to 4, after bonding the bonding wafer, the bonded substrate was diced, and the bonding force between the holding substrate made of spinel and the bonding wafer was investigated for the sample obtained by dicing.
  • sample Sample No. formed in Experimental Example 1 above. A bonded substrate using 1 to 4 holding substrates was prepared.
  • the prepared four bonded substrates were diced so as to cut out a plurality of 10 mm ⁇ 10 mm square samples.
  • Ten 10 mm ⁇ 10 mm square samples are taken out from each bonding substrate, and both surfaces are bonded to a jig, and a holding substrate made of spinel and a bonding wafer are pulled in a 180 ° direction by a tensile tester. The tensile strength was measured after peeling.
  • the present invention is particularly excellent as a technique for manufacturing a light-emitting element that can be practically substituted for a light-emitting element having a sapphire substrate at a lower cost.
  • 1 buffer layer 2 n-type GaN layer, 3 n-type AlGaN layer, 4 multiple quantum well, 5 p-type AlGaN layer, 6 p-type GaN layer, 7 n-type electrode, 8 p-type electrode, 10 substrate, 10a main surface, 16 p-type ohmic contact epitaxial layer, 18, 54 p-type cladding layer, 20, 53 active layer, 22, 52 n-type cladding layer, 24 etching stop layer, 26 n-type GaAs substrate, 30 light emitting element, 40 CMP apparatus, 41 Support column, 42 surface plate, 43 polishing pad, 44 soft layer, 45 polishing head, 46 rotating support column, 47 slurry supply unit, 48 slurry, 50 ion beam.

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Abstract

La présente invention concerne : un substrat permettant la production d'un élément photo-émetteur moins onéreux qu'un élément photo-émetteur sur substrat de saphir ; un procédé de production du substrat ; et un élément photo-émetteur employant le substrat. La présente invention concerne spécifiquement un substrat (10) pour élément photo-émetteur (30) composé d'un spinelle. Il est préférable que la composition d'un corps fritté de spinelle constituant le substrat (10) soit représentée par MgO·nAl2O3 (où 1,05 ≤ n ≤ 1,30) et que la teneur en élément Si soit inférieure ou égale à 20 ppm.
PCT/JP2011/064128 2010-06-22 2011-06-21 Substrat, procédé de production du substrat et élément photo-émetteur WO2011162236A1 (fr)

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CN102947246A (zh) 2013-02-27
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