WO2011141139A3 - Verfahren zur herstellung einer einseitig kontaktierbaren solarzelle aus einem silizium-halbleitersubstrat - Google Patents

Verfahren zur herstellung einer einseitig kontaktierbaren solarzelle aus einem silizium-halbleitersubstrat Download PDF

Info

Publication number
WO2011141139A3
WO2011141139A3 PCT/EP2011/002239 EP2011002239W WO2011141139A3 WO 2011141139 A3 WO2011141139 A3 WO 2011141139A3 EP 2011002239 W EP2011002239 W EP 2011002239W WO 2011141139 A3 WO2011141139 A3 WO 2011141139A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitter
layer
contacting
regions
base
Prior art date
Application number
PCT/EP2011/002239
Other languages
English (en)
French (fr)
Other versions
WO2011141139A2 (de
Inventor
Martin Hermle
Filip Granek
Christian Reichel
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V
Publication of WO2011141139A2 publication Critical patent/WO2011141139A2/de
Publication of WO2011141139A3 publication Critical patent/WO2011141139A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Verfahren zur Herstellung einer einseitig kontaktierbaren Solarzelle folgende Verfahrensschritte umfassend: Oberflächenreinigung zumindest einer Emitterseite (1a) des Halbleitersubstrates; aufbringen einer Emitterschicht auf die Emitterseite (1a) des Halbleitersubstrates; aufbringen einer querleitfähigen Emitterkontaktierungsschicht (3), welche die Emitterschicht (2) überdeckt, wobei Emitterschicht (2) und Emitterkontaktierungsschicht (3) an einer Mehrzahl von Basiskontaktierungsbereichen wieder entfernt werden; aufbringen einer Isolierungsschicht (5) zumindest an den Basiskontaktierungsbereichen und auf die die Basiskontaktierungsbereiche umgebenden Oberflächenbereiche der Emitterschicht (2) und/oder der Emitterkontaktierungsschicht (3); öffnen der Isolationsschicht an einer Mehrzahl von Basishochdotierungsbereichen und lokales Eintreiben eines Dotierstoffes an den Basishochdotierungsbereichen, durch lokales Erhitzen den Basishochdotierungsbereichen; aufbringen einer oder mehrere Basiskontaktierungsstrukturen mittels eines elektromischen Verfahrens; Verstärkung der Basiskontaktierugsstruktur, wobei in den auf zweiten Verfahrenschritt folgenden Verfahrenschritten keine globale Erwärmung der Emitterschicht (2) auf mehr als 250°C erfolgt.
PCT/EP2011/002239 2010-05-14 2011-05-05 Verfahren zur herstellung einer einseitig kontaktierbaren solarzelle aus einem silizium-halbleitersubstrat WO2011141139A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010020557.5 2010-05-14
DE102010020557A DE102010020557A1 (de) 2010-05-14 2010-05-14 Verfahren zur Herstellung einer einseitig kontaktierbaren Solarzelle aus einem Silizium-Halbleitersubstrat

Publications (2)

Publication Number Publication Date
WO2011141139A2 WO2011141139A2 (de) 2011-11-17
WO2011141139A3 true WO2011141139A3 (de) 2012-07-05

Family

ID=44626187

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/002239 WO2011141139A2 (de) 2010-05-14 2011-05-05 Verfahren zur herstellung einer einseitig kontaktierbaren solarzelle aus einem silizium-halbleitersubstrat

Country Status (2)

Country Link
DE (1) DE102010020557A1 (de)
WO (1) WO2011141139A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101948206B1 (ko) * 2012-03-02 2019-02-14 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지와, 이의 제조 방법
KR101882439B1 (ko) * 2012-08-08 2018-07-26 엘지전자 주식회사 태양 전지 및 그 제조 방법
NL2009382C2 (en) * 2012-08-29 2014-03-18 M4Si B V Method for manufacturing a solar cell and solar cell obtained therewith.
CN108666378A (zh) * 2018-07-11 2018-10-16 泰州隆基乐叶光伏科技有限公司 一种p型背接触太阳电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
WO2007085452A1 (de) * 2006-01-25 2007-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zur präzisionsbearbeitung von substraten mittels eines in einen flüssigkeitsstrahl eingekoppelten laser und dessen verwendung
DE102009040670A1 (de) * 2009-09-09 2010-02-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer einseitig kontaktierbaren Solarzelle
US20100059117A1 (en) * 2007-02-08 2010-03-11 Wuxi Suntech-Power Co., Ltd. Hybrid silicon solar cells and method of fabricating same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10046170A1 (de) 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
US7199395B2 (en) 2003-09-24 2007-04-03 Sanyo Electric Co., Ltd. Photovoltaic cell and method of fabricating the same
DE102007010872A1 (de) * 2007-03-06 2008-09-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
WO2007085452A1 (de) * 2006-01-25 2007-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zur präzisionsbearbeitung von substraten mittels eines in einen flüssigkeitsstrahl eingekoppelten laser und dessen verwendung
US20100059117A1 (en) * 2007-02-08 2010-03-11 Wuxi Suntech-Power Co., Ltd. Hybrid silicon solar cells and method of fabricating same
DE102009040670A1 (de) * 2009-09-09 2010-02-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer einseitig kontaktierbaren Solarzelle

Also Published As

Publication number Publication date
DE102010020557A1 (de) 2011-11-17
WO2011141139A2 (de) 2011-11-17

Similar Documents

Publication Publication Date Title
WO2010081505A3 (de) Solarzelle und verfahren zur herstellung einer solarzelle aus einem siliziumsubstrat
TW200638555A (en) Solar cell and semiconductor device, and manufacturing method thereof
WO2013105031A3 (fr) Procede pour realiser un module photovoltaïque avec deux etapes de gravure p2 et p3 et module photovoltaïque correspondant
WO2011071937A3 (en) Method of cleaning and forming a negatively charged passivation layer over a doped region
WO2011091959A8 (de) Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist
WO2009011185A1 (ja) 太陽電池の製造方法
JP2011044517A5 (de)
WO2011097056A3 (en) Solar cells and methods of fabrication thereof
WO2011126660A3 (en) Method of forming a negatively charged passivation layer over a diffused p-type region
TW200709415A (en) Gate pattern of semiconductor device and method for fabricating the same
WO2009025502A3 (en) Solar cell having porous structure and method for fabrication thereof
WO2012136387A3 (de) Metallpartikelhaltiges und ätzendes druckbares medium insbesondere zur kontaktbildung mit silizium beim herstellen einer solarzelle
WO2008117395A1 (ja) 有機半導体素子及びその製造方法
WO2011106204A3 (en) Single-junction photovoltaic cell
WO2010085439A3 (en) Self-aligned selective emitter formed by counterdoping
WO2011157420A3 (de) Verfahren zur herstellung einer metallischen kontaktstruktur einer photovoltaischen solarzelle
WO2011141139A3 (de) Verfahren zur herstellung einer einseitig kontaktierbaren solarzelle aus einem silizium-halbleitersubstrat
TW200744162A (en) Method for fabricating semiconductor device having capacitor
TW200715466A (en) Method of forming an electrical isolation associated with a wiring level on a semiconductor wafer
JP2010186852A5 (de)
TW200618093A (en) Method for manufacturing semiconductor device
WO2012022349A3 (de) Verfahren zur herstellung einer solarzelle mit einem selektiven emitter
WO2012000612A3 (de) Verfahren zur erzeugung einer selektiven dotierstruktur in einem halbleitersubstrat zur herstellung einer photovoltaischen solarzelle
CN107819021B (zh) 一种柔性oled显示面板的制备方法及柔性oled显示面板
WO2011116762A3 (de) Herstellungsverfahren einer halbleitersolarzelle

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11717968

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11717968

Country of ref document: EP

Kind code of ref document: A2