WO2011125705A1 - プラズマ窒化処理方法及びプラズマ窒化処理装置 - Google Patents
プラズマ窒化処理方法及びプラズマ窒化処理装置 Download PDFInfo
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- WO2011125705A1 WO2011125705A1 PCT/JP2011/057958 JP2011057958W WO2011125705A1 WO 2011125705 A1 WO2011125705 A1 WO 2011125705A1 JP 2011057958 W JP2011057958 W JP 2011057958W WO 2011125705 A1 WO2011125705 A1 WO 2011125705A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/338—Changing chemical properties of treated surfaces
- H01J2237/3387—Nitriding
Definitions
- the present invention relates to a plasma nitriding method and a plasma processing apparatus.
- Plasma processing apparatuses that perform processing such as film formation using plasma include, for example, various semiconductor devices manufactured from silicon and compound semiconductors, FPDs (flat panel displays) typified by liquid crystal display devices (LCD), and the like. Used in the manufacturing process. In such a plasma processing apparatus, parts made of a dielectric material such as quartz are frequently used as parts in the processing container.
- a microwave-excited plasma processing apparatus that generates plasma by introducing a microwave into a processing container using a planar antenna having a plurality of slots is known.
- a microwave guided to a planar antenna is introduced into a space in a processing vessel through a quartz microwave transmission plate (sometimes called a top plate or a transmission window).
- the high-density plasma is generated by reacting with the processing gas (for example, Patent Document 1).
- uniformity between surfaces of processing results refers to, for example, plasma nitriding processing that uses the same plasma processing apparatus and nitrides silicon on the surface of an object to be processed between a plurality of substrates to be processed. It means that variations in the thickness of the nitride film and the nitrogen dose amount are within a certain range.
- plasma nitriding processing that uses the same plasma processing apparatus and nitrides silicon on the surface of an object to be processed between a plurality of substrates to be processed. It means that variations in the thickness of the nitride film and the nitrogen dose amount are within a certain range.
- the uniformity of the nitrogen dose amount between surfaces deteriorates and the number of particles generated from the processing apparatus May increase and exceed the reference value.
- the uniformity of the nitrogen dose amount between surfaces is maintained, and generation of particles from the processing apparatus is prevented.
- a plasma nitriding method that can be suppressed.
- the inventors have found that the surface state of a member (for example, a quartz member) in the plasma processing apparatus changes depending on the processing conditions, and that it is deeply involved in the deterioration of inter-surface uniformity and the generation of particles.
- the present invention has been completed based on such findings.
- the flow rate of the processing gas containing nitrogen gas and noble gas in the processing vessel of the plasma processing apparatus is set to the total flow rate [mL / min ( sccm)] is introduced in a range of 1.5 (mL / min) / L to 13 (mL / min) / L, and nitrogen-containing plasma is generated in the processing vessel.
- the nitriding treatment is performed on the oxygen-containing films of the plurality of objects to be processed while replacing the object to be processed having the oxygen-containing films.
- the volume flow ratio (nitrogen gas / rare gas) between the nitrogen gas and the rare gas is preferably in the range of 0.05 to 0.8.
- the flow rate of the nitrogen gas is in a range of 4.7 mL / min (sccm) or more and 225 mL / min (sccm) or less
- the flow rate of the rare gas is 95 mL / min (sccm) or more and 275 mL / min. More preferably, it is within the range of min (sccm) or less.
- the pressure in the processing vessel is in a range of 1.3 Pa to 133 Pa.
- the processing time for one object to be processed in the plasma nitriding treatment is 10 seconds or more and 300 seconds or less.
- the plasma processing apparatus comprises: The processing vessel having an opening at the top; A mounting table disposed in the processing container and on which a target object is mounted; A transmission plate that is provided facing the mounting table and blocks the opening of the processing vessel and transmits microwaves; A planar antenna provided outside the transmission plate and having a plurality of slots for introducing microwaves into the processing vessel; A gas introduction unit for introducing a processing gas containing nitrogen gas and a rare gas from a gas supply device into the processing container; An exhaust device for evacuating the inside of the processing vessel; With The nitrogen plasma is preferably microwave-excited plasma formed by the processing gas and a microwave introduced into the processing container by the planar antenna.
- the power density of the microwave is preferably in the range of 0.6 W / cm 2 or more 2.5 W / cm 2 or less per area of the transmissive plate.
- the processing temperature is preferably in the range of 25 ° C. (room temperature) to 600 ° C. as the temperature of the mounting table.
- the processing vessel having an opening at the top; A mounting table disposed in the processing container and on which a target object is mounted; A transmission plate that is provided facing the mounting table and blocks the opening of the processing vessel and transmits microwaves; A planar antenna provided outside the transmission plate and having a plurality of slots for introducing microwaves into the processing vessel; A gas introduction unit for introducing a processing gas containing nitrogen gas and a rare gas from a gas supply device into the processing container; An exhaust device for evacuating the inside of the processing vessel; A control unit that controls the object to be processed to perform plasma nitriding in the processing container, and the control unit includes: Evacuating the inside of the processing vessel with the exhaust device and reducing the pressure to a predetermined pressure; The processing gas containing the nitrogen gas and the rare gas from the gas supply device into the processing container is 1.5 (mL / min as a total flow rate [mL / min (sccm)] of processing gas per liter of the processing container.
- processing is performed so that the total flow rate of the processing gas containing nitrogen gas and rare gas is in the range of 1.5 (mL / min) / L to 13 (mL / min) / L. Introduce into container.
- the uniformity of processing uniformity between surfaces
- the oxidation of the quartz member in the processing container can be suppressed, and the generation of particles in the processing container can be prevented. It can be effectively suppressed.
- fluctuations in the nitrogen dose due to the memory effect between different types of wafers can also be suppressed. Therefore, a highly reliable plasma nitriding process with less generation of particles can be realized.
- FIG. 6 It is a schematic sectional drawing which shows the structural example of the plasma nitriding apparatus suitable for implementation of the plasma nitriding method of this invention. It is drawing which shows the structure of a planar antenna. It is explanatory drawing which shows the structure of a control part. It is drawing explaining the change of the surface of the quartz member in a plasma nitriding process. It is drawing explaining the state of the surface of the quartz member following FIG. It is drawing explaining the state of the surface of the quartz member following FIG. It is drawing explaining the state of the surface of the quartz member following FIG. It is drawing explaining the state of the surface of the quartz member following FIG. 6 is a drawing showing a nitrogen dose amount of a silicon nitride film formed under a small flow rate condition 1-A in Experimental Example 1 and a result of uniformity between wafers.
- 6 is a drawing showing a nitrogen dose amount of a silicon nitride film formed under a high flow rate condition 1-B in Experimental Example 1 and a result of uniformity between wafers.
- 6 is a drawing showing a nitrogen dose amount of a silicon nitride film formed under a high flow rate condition 1-C in Experimental Example 1 and a result of uniformity between wafers.
- 6 is a diagram illustrating a relationship between the number of processed wafers and the number of particles in Experimental Example 2; It is drawing which shows the nitrogen dose amount of the silicon nitride film formed in Experimental example 3, and its uniformity within a wafer surface.
- FIG. 1 is a cross-sectional view schematically showing a schematic configuration of the plasma nitriding apparatus 100.
- 2 is a plan view showing a planar antenna of the plasma nitriding apparatus 100 of FIG. 1
- FIG. 3 is a diagram for explaining the configuration of the control system of the plasma nitriding apparatus 100. As shown in FIG.
- the plasma nitriding apparatus 100 generates plasma in a processing container by introducing a microwave into the processing container using a planar antenna having a plurality of slot-shaped holes, particularly a RLSA (Radial Line Slot Antenna). It is configured as an RLSA microwave plasma processing apparatus. As a result, the plasma nitriding apparatus 100 can generate microwave-excited plasma having a high density and a low electron temperature. In the plasma nitriding apparatus 100, for example, processing with plasma having a plasma density of 1 ⁇ 10 10 to 5 ⁇ 10 12 / cm 3 and a low electron temperature of 0.7 to 2 eV is possible.
- the plasma nitriding apparatus 100 is suitable for the purpose of forming a silicon nitride oxide film (SiON film), a silicon nitride film (SiN film) or the like by nitriding a silicon oxide film or silicon in the manufacturing process of various semiconductor devices. Available.
- the plasma nitriding apparatus 100 has, as main components, a processing container 1 that houses a semiconductor wafer (hereinafter simply referred to as a “wafer”) W that is an object to be processed, and a mounting for mounting the wafer W in the processing container 1.
- the pedestal 2 a gas introduction unit 15 connected to a gas supply device 18 for introducing gas into the processing container 1, an exhaust device 24 for evacuating the inside of the processing container 1, and an upper part of the processing container 1 are provided.
- a microwave introducing device 27 as plasma generating means for introducing a microwave into the processing vessel 1 to generate plasma, and a control unit 50 for controlling each component of the plasma nitriding processing device 100.
- the object to be processed (wafer W) is used to include various thin films formed on the surface thereof, such as a polysilicon layer and a silicon oxide film.
- the gas supply device 18 may be included in a constituent part of the plasma nitriding apparatus 100, or may be configured to be used by connecting an external gas supply device to the gas introduction unit 15 without being included in the constituent part.
- the processing container 1 is formed of a grounded substantially cylindrical container. Although the volume of the processing container 1 can be adjusted as appropriate, in the present embodiment, for example, it has a volume of 55 L. Note that the processing container 1 may be formed of a rectangular tube-shaped container.
- the processing container 1 is open at the top and has a bottom wall 1a and a side wall 1b made of a material such as aluminum. Inside the side wall 1b, a heat medium flow path 1c is provided.
- a mounting table 2 is provided for horizontally mounting a wafer W, which is an object to be processed.
- the mounting table 2 is made of ceramics such as AlN and Al 2 O 3 , for example. Among them, a material having particularly high thermal conductivity such as AlN is preferably used.
- the mounting table 2 is supported by a cylindrical support member 3 extending upward from the center of the bottom of the exhaust chamber 11.
- the support member 3 is made of ceramics such as AlN, for example.
- the mounting table 2 is provided with a cover member 4 for covering the outer edge or the entire surface of the mounting table 2 and guiding the wafer W.
- the cover member 4 is formed in an annular shape and covers the mounting surface and / or side surface of the mounting table 2.
- the cover member 4 blocks the contact between the mounting table 2 and the plasma, prevents the mounting table 2 from being sputtered, and prevents impurities from entering the wafer W.
- the cover member 4 is made of a material such as quartz, single crystal silicon, polysilicon, amorphous silicon, or silicon nitride, and quartz having a good compatibility with plasma is most preferable.
- the material constituting the cover member 4 is preferably a high-purity material with a low content of impurities such as alkali metals and metals.
- a resistance heating type heater 5 is embedded in the mounting table 2.
- the heater 5 is heated by the heater power supply 5a to heat the mounting table 2 and uniformly heats the wafer W, which is the object to be processed, with the heat.
- the mounting table 2 is provided with a thermocouple (TC) 6.
- TC thermocouple
- the heating temperature of the wafer W can be controlled in a range from room temperature to 900 ° C., for example.
- the mounting table 2 is provided with wafer support pins (not shown) used for delivering the wafer W when the wafer W is carried into the processing container 1.
- Each wafer support pin is provided so as to protrude and retract with respect to the surface of the mounting table 2.
- a cylindrical liner 7 made of quartz is provided on the inner periphery of the processing vessel 1.
- a quartz-made annular baffle plate 8 having a large number of exhaust holes 8 a is provided on the outer peripheral side of the mounting table 2 in order to realize uniform exhaust in the processing container 1.
- the baffle plate 8 is supported by a plurality of support columns 9.
- a circular opening 10 is formed at a substantially central portion of the bottom wall 1a of the processing container 1.
- An exhaust chamber 11 that communicates with the opening 10 and protrudes downward is provided on the bottom wall 1a.
- An exhaust pipe 12 is connected to the exhaust chamber 11, and the exhaust pipe 12 is connected to an exhaust device 24. In this way, the inside of the processing container 1 can be evacuated.
- the upper part of the processing container 1 is open.
- a frame-shaped plate 13 having an opening / closing function (function as Lid) is disposed on the upper part of the processing container 1.
- the inner periphery of the frame-shaped plate 13 protrudes toward the inside (the space in the processing container 1), and forms an annular support portion 13a.
- the support portion 13a and the processing container 1 are hermetically sealed through a seal member 14.
- a loading / unloading port 16 for loading / unloading the wafer W between the plasma nitriding apparatus 100 and a transfer chamber (not shown) adjacent to the plasma nitriding apparatus 100, and the loading / unloading port 16 are provided on the side wall 1b of the processing chamber 1.
- annular gas introducing portion 15 is provided on the side wall 1b of the processing container 1.
- the gas introduction unit 15 is connected to a gas supply device 18 that supplies a rare gas or a nitrogen gas.
- the gas introduction part 15 may be provided in a nozzle shape or a shower shape.
- the gas supply device 18 includes a gas supply source, piping (for example, gas lines 20a, 20b, and 20c), a flow rate control device (for example, mass flow controllers 21a and 21b), and valves (for example, opening and closing valves 22a and 22b). have.
- a gas supply source for example, a rare gas supply source 19a and a nitrogen gas supply source 19b are provided.
- the gas supply apparatus 18 may have a purge gas supply source used when replacing the atmosphere in the processing container 1, for example, as a gas supply source (not shown) other than the above.
- Ar gas is supplied from a rare gas supply source 19a.
- the rare gas include Kr gas, Xe gas, and He gas.
- Ar gas is particularly preferable because it is economical.
- the rare gas and the nitrogen gas are supplied from a rare gas supply source 19a and a nitrogen gas supply source 19b of the gas supply device 18 through gas lines (piping) 20a and 20b, respectively.
- the gas lines 20a and 20b merge at the gas line 20c, and are introduced into the processing container 1 from the gas introduction unit 15 connected to the gas line 20c.
- Each gas line 20a, 20b connected to each gas supply source is provided with a mass flow controller 21a, 21b and a set of on-off valves 22a, 22b arranged before and after the mass flow controller 21a, 21b.
- the exhaust device 24 includes a high-speed vacuum pump such as a turbo molecular pump. As described above, the exhaust device 24 is connected to the exhaust chamber 11 of the processing container 1 through the exhaust pipe 12. The gas in the processing container 1 flows uniformly into the space 11 a of the exhaust chamber 11, and is further exhausted to the outside through the exhaust pipe 12 by operating the exhaust device 24. Thereby, the inside of the processing container 1 can be depressurized at a high speed to a predetermined degree of vacuum, for example, 0.133 Pa.
- a predetermined degree of vacuum for example, 0.133 Pa.
- a heat medium flow path 1c formed in the side wall 1b of the processing container 1 is formed.
- a chiller unit 26 is connected to the heat medium flow path 1c through a heat medium introduction pipe 25a and a heat medium discharge pipe 25b. The chiller unit 26 adjusts the temperature of the side wall 1b of the processing container 1 by circulating the heat medium adjusted to a predetermined temperature through the heat medium flow path 1c.
- the microwave introduction device 27 includes a transmission plate 28, a planar antenna 31, a slow wave material 33, a metal cover member 34, a waveguide 37, a matching circuit 38, and a microwave generation device 39 as main components.
- the microwave introduction device 27 is a plasma generation unit that introduces electromagnetic waves (microwaves) into the processing container 1 to generate plasma.
- the transmission plate 28 having a function of transmitting microwaves is disposed on a support portion 13 a that protrudes toward the inner periphery of the plate 13.
- the transmission plate 28 is made of a dielectric material such as quartz.
- the transmission plate 28 and the support portion 13a are hermetically sealed through a seal member 29 such as an O-ring. Therefore, the inside of the processing container 1 is kept airtight.
- the planar antenna 31 is provided above the transmission plate 28 (outside of the processing container 1) so as to face the mounting table 2.
- the planar antenna 31 has a disk shape.
- the shape of the planar antenna 31 is not limited to a disk shape, and may be a square plate shape, for example.
- the planar antenna 31 is locked to the upper end of the plate 13.
- the planar antenna 31 is made of a conductive member such as a copper plate, an aluminum plate, a nickel plate, or an alloy thereof whose surface is plated with gold or silver.
- the planar antenna 31 has a number of slot-shaped microwave radiation holes 32 that radiate microwaves.
- the microwave radiation holes 32 are formed through the planar antenna 31 in a predetermined pattern.
- the individual microwave radiation holes 32 have an elongated rectangular shape (slot shape), for example, as shown in FIG. And typically, the adjacent microwave radiation holes 32 are arranged in an “L” shape. Further, the microwave radiation holes 32 arranged in combination in a predetermined shape (for example, L-shape) are further arranged concentrically as a whole. The length and arrangement interval of the microwave radiation holes 32 are determined according to the wavelength ( ⁇ g) of the microwave. For example, the interval between the microwave radiation holes 32 is arranged to be ⁇ g / 4 to ⁇ g. In FIG. 2, the interval between adjacent microwave radiation holes 32 formed concentrically is indicated by ⁇ r. Note that the microwave radiation hole 32 may have another shape such as a circular shape or an arc shape. Furthermore, the arrangement form of the microwave radiation holes 32 is not particularly limited, and may be arranged in a spiral shape, a radial shape, or the like in addition to the concentric shape.
- a slow wave material 33 having a dielectric constant larger than that of a vacuum is provided on the upper surface of the planar antenna 31 (a flat waveguide formed between the planar antenna 31 and the metal cover member 34).
- the slow wave material 33 has a function of adjusting the plasma by shortening the wavelength of the microwave because the wavelength of the microwave becomes longer in vacuum.
- the material of the slow wave material 33 for example, quartz, polytetrafluoroethylene resin, polyimide resin or the like can be used.
- the planar antenna 31 and the transmission plate 28 and the slow wave member 33 and the planar antenna 31 may be brought into contact with or separated from each other, but they are preferably brought into contact with each other.
- a metal cover member 34 is provided on the upper portion of the processing container 1 so as to cover the planar antenna 31 and the slow wave material 33.
- the metal cover member 34 is made of a metal material such as aluminum or stainless steel.
- a flat waveguide is formed by the metal cover member 34 and the planar antenna 31 so that microwaves can be uniformly supplied into the processing container 1.
- the upper end of the plate 13 and the metal cover member 34 are sealed by a seal member 35.
- a channel 34 a is formed inside the wall of the metal cover member 34.
- the flow path 34a is connected to the chiller unit 26 by a pipe (not shown). By passing a heat medium such as cooling water from the chiller unit 26 through the flow path 34 a, the metal cover member 34, the slow wave material 33, the planar antenna 31 and the transmission plate 28 can be cooled.
- the metal cover member 34 is grounded.
- An opening 36 is formed in the center of the upper wall (ceiling part) of the metal cover member 34, and a waveguide 37 is connected to the opening 36.
- a microwave generator 39 that generates microwaves is connected to the other end of the waveguide 37 via a matching circuit 38.
- the waveguide 37 includes a coaxial waveguide 37a having a circular cross section extending upward from the opening 36 of the metal cover member 34, and an upper end portion of the coaxial waveguide 37a via a mode converter 40. And a rectangular waveguide 37b extending in the horizontal direction.
- the mode converter 40 has a function of converting the microwave propagating in the TE mode in the rectangular waveguide 37b into the TEM mode.
- An inner conductor 41 extends in the center of the coaxial waveguide 37a.
- the inner conductor 41 is connected and fixed to the center of the planar antenna 31 at its lower end. With such a structure, the microwave is efficiently and uniformly propagated radially and uniformly to the flat waveguide formed by the planar antenna 31 and the metal cover member 34 via the inner conductor 41 of the coaxial waveguide 37a.
- the microwave generated by the microwave generation device 39 is propagated to the planar antenna 31 through the waveguide 37, and further, the transmission plate from the microwave radiation hole 32 (slot). 28 is introduced into the processing container 1 via
- 2.45 GHz is preferably used as the frequency of the microwave, and 8.35 GHz, 1.98 GHz, or the like can also be used.
- the control unit 50 is typically a computer, and includes, for example, a process controller 51 including a CPU, a user interface 52 connected to the process controller 51, and a storage unit 53 as shown in FIG. .
- the process controller 51 is a component related to processing conditions such as temperature, pressure, gas flow rate, and microwave output (for example, the heater power supply 5a, the gas supply device 18, the exhaust device 24, the micro device). This is a control means for controlling the wave generator 39 and the like in an integrated manner.
- the user interface 52 includes a keyboard that allows a process manager to input commands to manage the plasma nitriding apparatus 100, a display that visualizes and displays the operating status of the plasma nitriding apparatus 100, and the like. .
- the storage unit 53 stores a control program (software) for realizing various processes executed by the plasma nitriding apparatus 100 under the control of the process controller 51, a recipe in which processing condition data, and the like are recorded. Has been.
- an arbitrary recipe is called from the storage unit 53 by an instruction from the user interface 52 and is executed by the process controller 51, whereby the plasma nitriding apparatus 100 is controlled under the control of the process controller 51.
- a desired process is performed in the processing container 1.
- the recipes such as the control program and processing condition data can be stored in a computer-readable storage medium such as a CD-ROM, hard disk, flexible disk, flash memory, DVD, or Blu-ray disk. Furthermore, it is possible to transmit the recipe from another apparatus, for example, via a dedicated line.
- the plasma nitriding apparatus 100 configured in this way, damage-free plasma processing can be performed on the wafer W at a low temperature of, for example, room temperature (about 25 ° C.) to 600 ° C.
- the plasma nitriding apparatus 100 is excellent in plasma uniformity, it is possible to realize good in-plane uniformity and inter-plane uniformity even for a large-diameter wafer W.
- the gate valve 17 is opened, and the wafer W is loaded into the processing container 1 from the loading / unloading port 16 and mounted on the mounting table 2.
- the inside of the processing container 1 is adjusted to a predetermined pressure.
- the chiller unit 26 circulates the heat medium adjusted to a predetermined temperature through the heat medium flow path 1c to adjust the temperature of the side wall 1b of the processing container 1 to the predetermined temperature.
- a microwave having a predetermined frequency for example, 2.45 GHz
- the microwave guided to the waveguide 37 propagates sequentially through the rectangular waveguide 37 b and the coaxial waveguide 37 a and is supplied to the planar antenna 31 via the inner conductor 41.
- the microwave propagates in the TE mode in the rectangular waveguide 37b, and the TE mode microwave is converted into the TEM mode by the mode converter 40 and propagates in the coaxial waveguide 37a toward the planar antenna 31. It will be done.
- the microwave is radiated to the space above the wafer W in the processing chamber 1 through the transmission plate 28 from the slot-shaped microwave radiation hole 32 formed through the planar antenna 31.
- An electromagnetic field is formed in the processing container 1 by the microwave radiated from the planar antenna 31 through the transmission plate 28 into the processing container 1, and the processing gas such as a rare gas and nitrogen gas is turned into plasma.
- the microwave-excited plasma generated in this way has a high density of approximately 1 ⁇ 10 10 to 5 ⁇ 10 12 / cm 3 by radiating microwaves from the numerous microwave radiation holes 32 of the planar antenna 31. In the vicinity of the wafer W, low electron temperature plasma of about 1.2 eV or less is obtained.
- the conditions of the plasma nitriding process performed by the plasma nitriding apparatus 100 can be stored as a recipe in the storage unit 53 of the control unit 50. Then, the process controller 51 reads the recipe and sends a control signal to each component of the plasma nitriding apparatus 100, for example, the gas supply device 18, the exhaust device 24, the microwave generator 39, the heater power supply 5a, etc. Plasma nitriding treatment under desired conditions is realized.
- the flow rate and flow rate ratio of the processing gas are particularly important under the following conditions.
- the flow rate of the processing gas containing nitrogen gas and rare gas is 1.5 (mL / min) / L or more and 13 (mL / min) as the total flow rate [mL / min (sccm)] of the processing gas per 1 L of the processing container 1. ) / L or less.
- the quartz member (such as a plate) is oxidized and the stress is peeled off to cause generation of particles.
- the total flow rate of the processing gas exceeds 13 (mL / min) / L, oxygen cannot be discharged in the same manner, and the quartz member is oxidized to cause generation of particles.
- the unit [(mL / min) / L] of the total flow rate means the total flow rate [mL / min (sccm)] of the processing gas per 1 L of the volume of the processing container 1.
- the total flow rate of the processing gas is 82.5 mL / min (sccm) or more and 715 mL / min (sccm) or less.
- the flow rate of the N 2 gas is preferably in the range of, for example, 4.7 mL / min (sccm) to 225 mL / min (sccm).
- the flow rate of Ar gas is preferably in the range of 95 mL / min (sccm) to 275 mL / min (sccm), for example.
- the volume flow ratio (N 2 gas / Ar gas) of N 2 gas and Ar gas contained in the total processing gas increases the nitriding power of plasma and oxidizes parts (particularly quartz members) in the processing vessel 1. From the standpoint of suppressing and preventing particles, for example, a range of 0.05 to 0.8 is preferable, and a range of 0.2 to 0.8 is more preferable.
- the treatment pressure is preferably set in the range of 1.3 Pa or more and 133 Pa or less, and more preferably in the range of 1.3 Pa or more and 53.3 Pa or less, from the viewpoint of strengthening the nitriding power of plasma.
- the processing pressure is less than 1.3 Pa, there is damage to the underlying film, and when it exceeds 133 Pa, sufficient nitriding power cannot be obtained, and the effect of suppressing the oxidation of the quartz member in the processing container 1 and eliminating the cause of particles becomes lower.
- the processing time is preferably set to 10 seconds to 300 seconds, for example, and more preferably 30 seconds to 180 seconds. Containing nitrogen generated within a range of 1.5 (mL / min) / L to 13 (mL / min) / L as a total flow rate [mL / min (sccm)] of processing gas per liter of the processing container 1
- the effect of removing oxygen by plasma increases in proportion to the processing time up to a certain time. However, if the processing time becomes too long, it reaches a peak and the throughput decreases. Therefore, it is preferable to set the treatment time as short as possible within a range where a desired oxygen discharge effect can be obtained.
- the power density of the microwave in the plasma nitriding process is such that nitrogen plasma is generated stably and uniformly, and particles from a quartz member (for example, the transmission plate 28) generated by thermal stress by inducing a low temperature in the processing vessel 1 are generated. from the viewpoint of reducing it is preferably, for example, 0.6 W / cm 2 or more 2.5 W / cm 2 within the following ranges.
- the power density of the microwave means the microwave power per 1 cm 2 area of the transmission plate 28.
- the processing temperature (heating temperature of the wafer W) is set as the temperature of the mounting table 2 from the viewpoint of reducing particles in the quartz member (for example, the transmission plate 28) caused by thermal stress by inducing the temperature in the processing container 1 lower.
- the temperature is preferably in the range of 25 ° C. (about room temperature) to 600 ° C., more preferably in the range of 100 ° C. to 500 ° C.
- the nitrogen dose is lowered.
- the flow rate of the processing gas is 1.5 (mL / min) / L or more and 13 (mL / min) / L or less as the total flow rate [mL / min (sccm)] of the processing gas per liter of the processing container 1.
- the temperature is set within a range of, for example, 5 ° C. or more and 25 ° C. or less from the viewpoint of reducing particles from the surface of the quartz member (for example, the transmission plate 28) caused by thermal stress by inducing a low temperature in the processing container 1. It is preferable to set within the range of 10 ° C. or higher and 15 ° C. or lower.
- the above plasma nitriding conditions can be saved as a recipe in the storage unit 53 of the control unit 50. Then, the process controller 51 reads the recipe and sends a control signal to each component of the plasma nitriding apparatus 100, for example, the gas supply device 18, the exhaust device 24, the microwave generator 39, the heater power supply 5a, etc. Plasma nitriding treatment under desired conditions is realized.
- ⁇ Action> 4 to 7 show changes in the state of the surface of the quartz member (for example, the transmission plate 28) when the plasma nitriding process is performed in the processing container 1 of the plasma nitriding apparatus 100.
- FIG. When plasma nitriding is performed in the processing vessel 1 of the plasma nitriding apparatus 100, the surface of a quartz member such as the transmission plate 28 is exposed to nitrogen plasma. Therefore, SiO 2 is nitrided on the surface of the quartz member to become SiON, and further nitriding proceeds, and a thin SiN layer 101 is formed on the surface of the quartz member as shown in FIG.
- an oxygen-containing film for example, a SiO 2 film is nitrided with nitrogen plasma, oxygen and nitrogen are replaced, and oxygen atoms (O * ) are expelled from the film, which is released into the processing container 1 and the surface of the quartz member is Oxidized.
- oxygen atoms O *
- oxidation of the surface of the quartz member also occurs due to oxygen brought in from the outside of the processing container 1, such as moisture in the atmosphere attached to the wafer W.
- oxygen released from the wafer W is not exhausted together with the exhaust gas, but remains in the processing container 1 little by little, and the processing container increases as the number of processed wafers W increases. It becomes easy to accumulate in 1.
- the surface of the SiN layer 101 formed on the surface of the quartz member such as the transmission plate 28 in the processing container 1 is oxidized and a silicon nitride oxide layer ( SiON layer) 102 is formed. That is, the vicinity of the surface of the quartz member has a layer structure of SiO 2 / SiN / SiON from the inside to the surface side.
- the microwave power for plasma excitation is small, the nitriding power is reduced, so that the influence of oxygen is relatively increased, and the oxidation of the quartz member by oxygen is likely to proceed.
- the total flow rate [mL / min (sccm)] of processing gas per liter of the processing container 1 is 1.5 (mL / min) / L or more and 13 (mL / min).
- ) / L is introduced into the processing vessel 1 so as to be within the range of / L, and plasma nitriding is performed while exhausting by the exhaust device 24.
- oxygen atoms (oxygen radicals) and oxygen ions released from the wafer W and oxygen sources adhering or staying in the processing container 1 can be quickly discharged out of the processing container 1.
- the surface of the quartz member can always be maintained in the state shown in FIG.
- the separation of the SiON layer 102 from the quartz member is mainly caused by thermal stress, the generation of particles can be more reliably reduced by inducing the temperature in the processing container 1 to be lower.
- the processing temperature heating temperature of the wafer W by the heater 5 of the mounting table 2
- the power of the microwave generated by the microwave generator 39, and the temperature of the heat medium by the chiller unit 26 are set low. It is effective to do.
- the temperature in the processing container 1 decreases, the nitriding rate also tends to decrease.
- the flow rate of the processing gas to a high flow rate as described above, an extreme decrease in the nitriding rate can be avoided. That is, a decrease in the nitriding rate due to a decrease in the temperature of the processing container 1 can be compensated by an increase in the flow rate of the processing gas.
- the processing gas flow rate is set to 1.5 (mL / min) / L or more 13 (the total flow rate [mL / min (sccm)] of processing gas per 1 L of the processing container 1.
- Experimental example 1 An apparatus having the same configuration as that of the plasma nitriding apparatus 100 of FIG. 1 is used, and 25 wafers W are respectively subjected to nitriding conditions 1-A having a small total flow rate and nitriding conditions 1-B and 1-C having a large total flow rate.
- the plasma nitriding treatment was repeatedly performed on the above.
- a wafer W having a silicon oxide film on the surface was used.
- the nitrogen dose amount in the silicon oxide film was measured on the wafer with the oxide film after the plasma nitriding treatment, and the uniformity of the nitrogen dose amount between the wafers was evaluated.
- the result of the nitriding condition 1-A with the small total flow rate is shown in FIG. 8, the result of the nitriding condition 1-B with the large total flow rate is shown in FIG. 9, and the result of the nitriding condition 1-C with the large total flow rate is shown in FIG. 8 to 10, the horizontal axis indicates the wafer number, the vertical axis on the left side indicates the average nitrogen dose at nine locations on the wafer W, and the vertical axis on the right side indicates the uniform number. Range / 2 Ave. (%) [That is, the percentage of (maximum value of nitrogen dose ⁇ minimum value of nitrogen dose) / (2 ⁇ average nitrogen dose)].
- the average nitrogen dose (black rhombus plot) is larger than the condition 1-A (FIG. 8) for the large total flow rate than the condition 1-A (FIG. 9) for the large total flow rate.
- Condition 1-C (FIG. 10) was higher.
- Range / 2Ave With respect to (white square plot), in comparison between wafers, the condition 1-A (FIG. 8) for the small total flow rate is 3.800%, and the condition 1-B (FIG. 9) for the large total flow rate is 2.338%.
- the large total flow rate condition 1-C (FIG. 10) was 1.596%.
- Conditions 1-B (Fig. 9) and 1-C (Fig.
- Experimental example 2 A running test in which a plasma nitriding process is repeatedly performed on about 30,000 dummy wafers using the apparatus having the same configuration as the plasma nitriding apparatus 100 of FIG. 1 under the following nitriding conditions 2-A and nitriding conditions 2-B. Carried out. A dummy wafer having a silicon oxide film on the surface was used. The number of particles was measured with a particle counter on the dummy wafer after the plasma nitriding treatment. The results are shown in FIG. In the nitriding condition 2-A, the flow rate of the processing gas is relatively small, and in the nitriding condition 2-B, the flow rate of the processing gas is relatively large.
- the microwave power is 1000 W (power density per 1 cm 2 of the transmission plate (hereinafter referred to as “power density”); 0.5 W / cm 2 ) to 2000 W (power density: 1.0 W / cm 2 ) to 100 W.
- Plasma nitriding treatment was performed on 25 wafers each having a 6 nm SiO 2 film on the surface in the same manner as in Condition 2-B of Experimental Example 2 except that each step was changed step by step. Then, the nitrogen dose amount into the SiO 2 film, and the Range / 2Ave. (%) was evaluated. The results are shown in FIG.
- the microwave power is in a range of 1200 W (power density 0.6 W / cm 2 ) or more and 2000 W (power density; 1.0 W / cm 2 ) or less, the nitrogen dose uniformity in the wafer (in-plane uniformity) is obtained. It was good.
- Experimental Example 4 Using a device having the same configuration as the plasma nitriding apparatus 100 of FIG. 1, a number of wafers having SiO 2 films on the surface are continuously formed under the same conditions 2-A and 2-B as in Experimental Example 2. A running test was performed in which plasma nitriding was performed. Under condition 2-A, about 30,000 wafers were processed, and under condition 2-B, about 85,000 wafers W were processed. Then, while confirming the cross section of the surface vicinity of the permeation
- EDS energy dispersive X-ray analyzer
- Condition 2-B the existence depth of nitrogen by EDS analysis was 1 ⁇ m. Since this depth range does not contain oxygen, it was confirmed that the SiN layer was maintained even after processing of about 85,000 wafers. Therefore, by performing the plasma nitriding process under condition 2-B with a large total flow rate, even if the number of processed sheets reaches 85,000, the formation of a SiON layer that causes particle generation on the surface of the quartz member in the processing container 1 is performed. It was confirmed that it could be suppressed.
- a processing gas containing nitrogen gas and a rare gas is used as the total flow rate [mL / min (sccm)] of the processing gas per liter of the processing container 1.
- it is introduced into the processing container 1 so as to be in the range of 1.5 (mL / min) / L to 13 (mL / min) / L.
- the plasma nitriding apparatus 100 can realize a highly reliable plasma nitriding process with less generation of particles.
- This plasma conditioning method relates to a method of conditioning the processing container 1 of the plasma nitriding apparatus 100 in order to reduce particles and contamination (contamination due to metal elements, alkali metal elements, etc.).
- plasma conditioning under common conditions has been performed when the plasma nitriding apparatus 100 is started up (start-up) or after maintenance such as disassembly and parts replacement.
- oxygen plasma and nitrogen plasma are generated in the processing vessel 1. This plasma conditioning took, for example, about 13 to 14 hours.
- the plasma conditioning is performed under the same conditions and the same time regardless of the state in the processing container 1, so that the downtime of the apparatus becomes longer, and the parts in the processing container 1 are caused by the long-time plasma irradiation. There was also an adverse effect of shortening the lifetime of the transmission plate 28 (for example, the transmission plate 28).
- the plasma conditioning recipe was reviewed, and three stages of plasma conditioning recipes (first to third recipes) were prepared according to the state in the processing container 1 (particularly the contamination level).
- the first recipe is performed when the plasma nitriding apparatus 100 is started up (start-up).
- the second recipe is performed after a relatively large-scale maintenance.
- comparatively large-scale maintenance for example, replacement of the mounting table 2 or maintenance involving removal of the mounting table 2 can be given.
- the third recipe is performed after performing relatively minor maintenance.
- comparatively minor maintenance for example, replacement of the permeation plate 28, replacement of the turbo molecular pump of the exhaust device 24, replacement of the O-ring or valve body of the gate valve 17 and the like can be cited.
- the degree of plasma conditioning is higher in the order of first recipe> second recipe> third recipe, and according to the first recipe, plasma conditioning is performed with the most thorough content with the same content as conventional plasma conditioning.
- High pressure oxidation conditioning and low pressure oxidation conditioning are repeated 30 cycles alternately using a single wafer.
- FIG. 14 shows the measurement result of the contamination amount on the front surface of the wafer W
- FIG. 15 shows the contamination amount measurement on the back surface of the wafer W
- FIGS. 16 and 17 show the case of the second recipe, in which FIG. 16 shows the measurement result of the contamination amount for the front surface of the wafer W
- FIG. 18 shows the measurement result of the amount of contamination on the front surface and the back surface of the wafer W after the plasma conditioning in the case of the third recipe.
- the reference value of the contamination amount was set to 10 ⁇ 10 10 [atoms / cm 2 ].
- the amount of contamination on the front and back surfaces of the wafer W is the reference value by plasma conditioning according to the second recipe (FIGS. 16 and 17) and the third recipe (FIG. 18). It was below. That is, it was confirmed that the amount of contamination could be reduced to the same level as in the case of the plasma conditioning of the first recipe (FIGS. 14 and 15) by the plasma conditioning by the second recipe and the third recipe.
- the time required for plasma conditioning is 41 (that is, 1/2 or less) in the second recipe and 19 (about 1/5) in the third recipe, assuming that the time of plasma conditioning in the first recipe is 100. I was able to shorten it.
- the plasma conditioning time can be shortened by selecting one of the first to third recipes according to the contamination level in the processing container 1, so that the downtime of the plasma nitriding apparatus 100 can be shortened and production can be performed. It became possible to increase efficiency.
- the plasma conditioning time can be shortened, the plasma irradiation time for the consumable parts in the processing container 1 can be reduced, so that the lifetime of a quartz member such as the transmission plate 28 can be prolonged.
- the above plasma conditioning method as a pretreatment method in combination with the plasma nitriding method of the present invention, it is possible to reduce the amount of particles and the amount of contamination. Therefore, a semiconductor process in which particle contamination and contamination are suppressed as much as possible is realized, and a highly reliable semiconductor device can be provided. Further, in the plasma processing apparatus, it is possible to improve throughput by performing plasma nitriding after performing this plasma conditioning.
- the RLSA type plasma nitriding apparatus 100 is used.
- other types of plasma processing apparatuses may be used.
- ECR electron cyclotron resonance
- SWP surface wave plasma
- a substrate as an object to be processed includes, for example, an FPD (flat panel display) substrate or a solar cell.
- a substrate may be used.
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Abstract
Description
上部に開口を有する前記処理容器と、
前記処理容器内に配置され、被処理体を載置する載置台と、
前記載置台に対向して設けられ、前記処理容器の開口を塞ぐとともにマイクロ波を透過させる透過板と、
前記透過板より外側に設けられ、前記処理容器内にマイクロ波を導入するための複数のスロットを有する平面アンテナと、
前記処理容器内にガス供給装置から窒素ガスと希ガスを含む処理ガスを導入するガス導入部と、
前記処理容器内を減圧排気する排気装置と、
を備えており、
前記窒素プラズマは、前記処理ガスと、前記平面アンテナにより前記処理容器内に導入されるマイクロ波と、によって形成されるマイクロ波励起プラズマであることが好ましい。
上部に開口を有する前記処理容器と、
前記処理容器内に配置され、被処理体を載置する載置台と、
前記載置台に対向して設けられ、前記処理容器の開口を塞ぐとともにマイクロ波を透過させる透過板と、
前記透過板より外側に設けられ、前記処理容器内にマイクロ波を導入するための複数のスロットを有する平面アンテナと、
前記処理容器内にガス供給装置から窒素ガスと希ガスを含む処理ガスを導入するガス導入部と、
前記処理容器内を減圧排気する排気装置と、
前記処理容器内で被処理体に対してプラズマ窒化処理を行うように制御する制御部と、を備えたプラズマ窒化処理装置であって、前記制御部は、
前記処理容器内を前記排気装置により排気して所定の圧力に減圧するステップ、
前記処理容器内に前記ガス供給装置から前記窒素ガスと希ガスを含む処理ガスを、前記処理容器の容積1L当りの処理ガスの合計流量[mL/min(sccm)]として1.5(mL/min)/L以上13(mL/min)/L以下の範囲内で前記ガス導入部を介して導入するステップ、
前記処理容器内に前記マイクロ波を前記平面アンテナ及び前記透過板を介して導入して、前記処理容器内に窒素含有プラズマを生成させるステップ、及び
前記窒素含有プラズマにより、酸素含有膜を有する被処理体の該酸素含有膜を窒化処理するステップ、
を実行させるものである。
ここで、プラズマ窒化処理装置100において行なわれるプラズマ窒化処理の好ましい条件について説明を行う。本実施の形態のプラズマ窒化処理では、下記の条件の中で、特に処理ガスの流量と流量比率が重要であり、これらを考慮することによって処理容器1内の酸素を効率よく排除し、窒素ドーズ量の面間均一性及びパーティクルの発生原因を除去できる。
処理ガスとしては、N2ガスとArガスを使用することが好ましい。窒素ガスと希ガスを含む処理ガスの流量を処理容器1の容積1L当りの処理ガスの合計流量[mL/min(sccm)]として1.5(mL/min)/L以上13(mL/min)/L以下の範囲内になるようにする。これにより処理容器1内の酸素を効率よく排除し、プラズマ窒化処理装置100における窒素ドーズ量の面間均一性及びパーティクルの発生原因を除去できる。処理ガスの総流量が1.5(mL/min)/Lより少ないと、処理容器1内からの酸素の排出が進まず、ウエハWを繰り返し処理する間に処理容器1内のパーツ(特に天板等の石英部材)が酸化されて応力剥離してパーティクル発生原因となる。一方、処理ガスの総流量が13(mL/min)/Lを超えると、同様に酸素の排出が出来ないので石英部材が酸化されてパーティクル発生の原因になる。なお、総流量の単位[(mL/min)/L]は、処理容器1の容積1L当りの処理ガスの合計流量[mL/min(sccm)]を意味している。例えば、処理容器1の容積が55Lである場合、処理ガスの合計流量は、82.5mL/min(sccm)以上715mL/min(sccm)以下となる。この場合、N2ガスの流量は、例えば4.7mL/min(sccm)以上225mL/min(sccm)以下の範囲内であることが好ましい。また、Arガスの流量は、例えば95mL/min(sccm)以上275mL/min(sccm)以下の範囲内であることが好ましい。
処理圧力は、プラズマの窒化力を強くする観点から、1.3Pa以上133Pa以下の範囲内に設定することが好ましく、1.3Pa以上53.3Pa以下の範囲内がより好ましい。処理圧力が1.3Pa未満では、下地膜へのダメージがあり、133Paを超えると、十分な窒化力が得られず、処理容器1内の石英部材の酸化を抑制してパーティクル原因を排除する効果が低くなる。
処理時間は、例えば10秒以上300秒以下に設定することが好ましく、30秒以上180秒以下に設定することがより好ましい。処理容器1の容積1L当りの処理ガスの合計流量[mL/min(sccm)]として1.5(mL/min)/L以上13(mL/min)/L以下の範囲内で生成した窒素含有プラズマによる酸素の除去効果はある程度の時間までは処理時間に比例して大きくなるが、処理時間が長くなりすぎると頭打ちになり、スループットが低下する。従って、所望の酸素排出効果が得られる範囲で、出来るだけ処理時間を短く設定することが好ましい。
プラズマ窒化処理におけるマイクロ波のパワー密度は、安定かつ均一に窒素プラズマを生成させるとともに、処理容器1内の温度を低めに誘導して熱応力により生じる石英部材(例えば透過板28)からのパーティクルを低減する観点から、例えば0.6W/cm2以上2.5W/cm2以下の範囲内とすることが好ましい。なお、本発明においてマイクロ波のパワー密度は、透過板28の面積1cm2あたりのマイクロ波パワーを意味する。
処理温度(ウエハWの加熱温度)は、処理容器1内の温度を低めに誘導して熱応力により生じる石英部材(例えば透過板28)からのパーティクルを低減する観点から、載置台2の温度として、例えば25℃(室温程度)以上600℃以下の範囲内とすることが好ましく、100℃以上500℃以下の範囲内に設定することがより好ましい。処理温度を低くすると、窒素ドーズ量は低下する。しかし、処理ガスの流量を、処理容器1の容積1L当りの処理ガスの合計流量[mL/min(sccm)]として1.5(mL/min)/L以上13(mL/min)/L以下の範囲内と大流量にすることによって、温度低下による窒化ドーズの低下を抑制して高ドーズで窒化処理することができる。
プラズマ窒化処理の間、プラズマによるチャンバの熱の増加をチラーユニット26から処理容器1の側壁1b及び金属製カバー部材34の流路34aへ供給する熱媒体により冷却する。その温度は、処理容器1内の温度を低めに誘導して熱応力により生じる石英部材(例えば透過板28)表面からのパーティクルを低減する観点から、例えば5℃以上25℃以下の範囲内に設定することが好ましく、10℃以上15℃以下の範囲内に設定することがより好ましい。
図4~図7は、プラズマ窒化処理装置100の処理容器1内で、プラズマ窒化処理を行った際の石英部材(例えば透過板28)の表面の状態変化を示している。プラズマ窒化処理装置100の処理容器1内で、プラズマ窒化処理を行なうと、透過板28などの石英部材の表面が窒素プラズマに曝される。そのため、石英部材の表面でSiO2が窒化されてSiONとなり、さらに窒化が進み、図4に示すように、石英部材の表面に薄いSiN層101が形成される。
実験例1:
図1のプラズマ窒化処理装置100と同様の構成の装置を用い、下記の小総流量の窒化条件1-A、大総流量の窒化条件1-B及び1-Cで、それぞれ25枚のウエハWに対して繰り返しプラズマ窒化処理を実施した。ウエハWは表面にシリコン酸化膜を有するものを使用した。プラズマ窒化処理後の酸化膜付ウエハに対して、シリコン酸化膜中の窒素ドーズ量を測定し、ウエハ間での窒素ドーズ量の均一性を評価した。小総流量の窒化条件1-Aの結果を図8に、大総流量の窒化条件1-Bの結果を図9に、大総流量の窒化条件1-Cの結果を図10に示した。図8~図10において、横軸はウエハ番号を示しており、向かって左側の縦軸は、ウエハW上の9箇所の平均窒素ドーズ量を示しており、向かって右側の縦軸は、均一性の指標であるRange/2Ave.(%)[すなわち、(窒素ドーズ量の最大値-窒素ドーズ量の最小値)/(2×平均窒素ドーズ量)、の百分率]を示している。
処理圧力;20Pa
Arガス流量;60mL/min(sccm)
N2ガス流量;20mL/min(sccm)
総流量;80mL/min(sccm)
マイクロ波の周波数:2.45GHz
マイクロ波パワー:1500W(パワー密度0.76W/cm2)
処理温度:500℃
処理時間:90秒
ウエハ径:300mm
処理容器容積:55L(小総流量:1.45(mL/min)/L)
処理圧力;20Pa
Arガス流量;255mL/min(sccm)
N2ガス流量;70mL/min(sccm)
総流量;325mL/min(sccm)
マイクロ波の周波数:2.45GHz
マイクロ波パワー:1500W(パワー密度0.76W/cm2)
処理温度:500℃
処理時間:90秒
ウエハ径:300mm
処理容器容積:55L(大総流量:5.91(mL/min)/L)
処理圧力;20Pa
Arガス流量;195mL/min(sccm)
N2ガス流量;130mL/min(sccm)
総流量;325mL/min(sccm)
マイクロ波の周波数:2.45GHz
マイクロ波パワー:2000W(パワー密度1.01W/cm2)
処理温度:500℃
処理時間:90秒
ウエハ径:300mm
処理容器容積:55L(大総流量:5.91(mL/min)/L)
図1のプラズマ窒化処理装置100と同様の構成の装置を用い、下記の窒化条件2-A及び窒化条件2-Bでそれぞれ約30,000枚のダミーウエハに対して繰り返しプラズマ窒化処理を行うランニング試験を実施した。ダミーウエハとしては、表面にシリコン酸化膜を有するものを使用した。プラズマ窒化処理後のダミーウエハに対して、パーティクルカウンタでパーティクル数を計測した。その結果を図11に示した。なお、窒化条件2-Aは、相対的に処理ガスの流量が小流量であり、窒化条件2-Bは、相対的に処理ガスの流量が大流量である。
処理圧力;20Pa
Arガス流量;48mL/min(sccm)
N2ガス流量;32mL/min(sccm)
総流量;80mL/min(sccm)
マイクロ波の周波数:2.45GHz
マイクロ波パワー:1500W(パワー密度0.76W/cm2)
処理温度:500℃
処理時間:90秒
ウエハ径:300mm
処理容器容積:55L(小総流量:1.45(mL/min)/L)
処理圧力;20Pa
Arガス流量;271mL/min(sccm)
N2ガス流量;54mL/min(sccm)
総流量;325mL/min(sccm)
マイクロ波の周波数:2.45GHz
マイクロ波パワー:1500W(パワー密度0.76W/cm2)
処理温度:500℃
処理時間:90秒
ウエハ径:300mm
処理容器容積:55L(大総流量:5.91(mL/min)/L)
次に、マイクロ波パワーを1000W(透過板1cm2当りのパワー密度(以下、「パワー密度」と記す);0.5W/cm2)から2000W(パワー密度;1.0W/cm2)まで100Wずつ段階的に変化させた以外は実験例2の条件2-Bと同様にして、表面に6nmのSiO2膜を有するウエハ25枚に対して、それぞれプラズマ窒化処理を行った。そして、SiO2膜中への窒素ドーズ量と、そのウエハ面内でのRange/2Ave.(%)を評価した。その結果を図12に示した。マイクロ波パワーが1200W(パワー密度0.6W/cm2)以上2000W(パワー密度;1.0W/cm2)以下の範囲内では、窒素ドーズ量のウエハ内の均一性(面内均一性)が良好であった。
図1のプラズマ窒化処理装置100と同様の構成の装置を用い、実験例2と同様の条件2-A、条件2-Bで、表面にSiO2膜を有する多数のウエハに対して、連続してプラズマ窒化処理を行うランニング試験を実施した。条件2-Aで約30,000枚弱、条件2-Bで約85,000枚弱のウエハWを処理した。その後、透過板28の表面付近の断面を電子顕微鏡により確認するとともに、エネルギー分散型X線分析装置(EDS)により同部位の元素存在比を分析した。その結果を図13に示した。
以下の高圧酸化コンディショニング、低圧酸化コンディショニング、ウエハレス直射コンディショニング、及び窒化コンディショニングの順に実施される。プラズマコンディショニングに要する時間は、合計で13~14時間程度である。なお、本明細書において、「高圧」、「低圧」の語は、あくまでも真空条件での圧力の違いを区別するために相対的な意味で用いる。以下に各コンディショニングのプロセス条件を示す。
処理圧力;400Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:3800W(パワー密度;1.95W/cm2)
Arガス流量;200mL/min(sccm)
H2ガス流量;20mL/min(sccm)
O2ガス流量;80mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×10サイクル
使用ウエハ:3枚
処理圧力;67Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:3200W(パワー密度;1.64W/cm2)
Arガス流量;200mL/min(sccm)
H2ガス流量;20mL/min(sccm)
O2ガス流量;80mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×30サイクル
使用ウエハ:10枚
処理圧力;67Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:3200W(パワー密度;1.64W/cm2)
Arガス流量;200mL/min(sccm)
H2ガス流量;20mL/min(sccm)
O2ガス流量;80mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×10サイクル
使用ウエハ:なし
処理圧力;20Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:2000W(パワー密度;1.0W/cm2)
Arガス流量;48mL/min(sccm)
N2ガス流量;32mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×10サイクル
使用ウエハ:5枚
以下のウエハレス直射コンディショニングを実施した後、高圧酸化コンディショニングと低圧酸化コンディショニングとを交互に繰り返し、その後、窒化コンディショニングを実施する。プラズマコンディショニングに要する時間は、合計で7~8時間程度である。以下に各コンディショニングのプロセス条件を示す。
処理圧力;67Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:3200W(パワー密度;1.64W/cm2)
Arガス流量;200mL/min(sccm)
H2ガス流量;20mL/min(sccm)
O2ガス流量;80mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×30サイクル
使用ウエハ:なし
処理圧力;400Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:3800W(パワー密度;1.95W/cm2)
Arガス流量;200mL/min(sccm)
H2ガス流量;20mL/min(sccm)
O2ガス流量;80mL/min(sccm)
処理温度:500℃
処理時間:60秒/1サイクル
処理圧力;67Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:3200W(パワー密度;1.64W/cm2)
Arガス流量;200mL/min(sccm)
H2ガス流量;20mL/min(sccm)
O2ガス流量;80mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒/1サイクル
処理圧力;20Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:2000W(パワー密度;1.0W/cm2)
Arガス流量;48mL/min(sccm)
N2ガス流量;32mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×50サイクル
使用ウエハ:1枚
以下のウエハレス直射コンディショニングを実施した後、窒化コンディショニングのみを実施する。プラズマコンディショニングに要する時間は、合計で2~3時間程度である。以下に各コンディショニングのプロセス条件を示す。
処理圧力;20Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:2000W(パワー密度;1.0W/cm2)
Arガス流量;48mL/min(sccm)
N2ガス流量;32mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×30サイクル
使用ウエハ:なし
処理圧力;20Pa
マイクロ波の周波数:2.45GHz
マイクロ波パワー:2000W(パワー密度;1.0W/cm2)
Arガス流量;48mL/min(sccm)
N2ガス流量;32mL/min(sccm)
処理温度:500℃
処理時間・回数:60秒×50サイクル
使用ウエハ:1枚
Claims (9)
- プラズマ処理装置の処理容器内に、窒素ガスと希ガスを含む処理ガスの流量を、処理容器の容積1L当りの処理ガスの合計流量[mL/min(sccm)]として1.5(mL/min)/L以上13(mL/min)/L以下の範囲内になるように導入し、前記処理容器内に窒素含有プラズマを生成させ、該窒素含有プラズマにより、酸素含有膜を有する被処理体を交換しながら、複数の被処理体の酸素含有膜に対して窒化処理を行うプラズマ窒化処理方法。
- 前記窒素ガスと希ガスとの体積流量比(窒素ガス/希ガス)が、0.05以上0.8以下の範囲内である請求項1に記載のプラズマ窒化処理方法。
- 前記窒素ガスの流量が、4.7mL/min(sccm)以上225mL/min(sccm)以下の範囲内であり、かつ、前記希ガスの流量が、95mL/min(sccm)以上275mL/min(sccm)以下の範囲内である請求項2に記載のプラズマ窒化処理方法。
- 前記処理容器内の圧力が1.3Pa以上133Pa以下の範囲内である請求項1に記載のプラズマ窒化処理方法。
- 前記プラズマ窒化処理における1枚の被処理体に対する処理時間が10秒以上300秒以下である請求項1に記載のプラズマ窒化処理方法。
- 前記プラズマ処理装置は、
上部に開口を有する前記処理容器と、
前記処理容器内に配置され、被処理体を載置する載置台と、
前記載置台に対向して設けられ、前記処理容器の開口を塞ぐとともにマイクロ波を透過させる透過板と、
前記透過板より外側に設けられ、前記処理容器内にマイクロ波を導入するための複数のスロットを有する平面アンテナと、
前記処理容器内にガス供給装置から窒素ガスと希ガスを含む処理ガスを導入するガス導入部と、
前記処理容器内を減圧排気する排気装置と、
を備えており、
前記窒素プラズマは、前記処理ガスと、前記平面アンテナにより前記処理容器内に導入されるマイクロ波と、によって形成されるマイクロ波励起プラズマである請求項1に記載のプラズマ窒化処理方法。 - 前記マイクロ波のパワー密度が、前記透過板の面積あたり0.6W/cm2以上2.5W/cm2以下の範囲内である請求項6に記載のプラズマ窒化処理方法。
- 処理温度が、前記載置台の温度として、25℃(室温)以上600℃以下の範囲内である請求項6に記載のプラズマ窒化処理方法。
- 上部に開口を有する前記処理容器と、
前記処理容器内に配置され、被処理体を載置する載置台と、
前記載置台に対向して設けられ、前記処理容器の開口を塞ぐとともにマイクロ波を透過させる透過板と、
前記透過板より外側に設けられ、前記処理容器内にマイクロ波を導入するための複数のスロットを有する平面アンテナと、
前記処理容器内にガス供給装置から窒素ガスと希ガスを含む処理ガスを導入するガス導入部と、
前記処理容器内を減圧排気する排気装置と、
前記処理容器内で被処理体に対してプラズマ窒化処理を行うように制御する制御部と、を備えたプラズマ窒化処理装置であって、前記制御部は、
前記処理容器内を前記排気装置により排気して所定の圧力に減圧するステップ、
前記処理容器内に前記ガス供給装置から前記窒素ガスと希ガスを含む処理ガスを、前記処理容器の容積1L当りの処理ガスの合計流量[mL/min(sccm)]として1.5(mL/min)/L以上13(mL/min)/L以下の範囲内で前記ガス導入部を介して導入するステップ、
前記処理容器内に前記マイクロ波を前記平面アンテナ及び前記透過板を介して導入して、前記処理容器内に窒素含有プラズマを生成させるステップ、及び
前記窒素含有プラズマにより、酸素含有膜を有する被処理体の該酸素含有膜を窒化処理するステップ、
を実行させるものであるプラズマ窒化処理装置。
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