WO2011125251A1 - Procédé et appareil pour la fabrication d'une cellule solaire au silicium en couche mince - Google Patents

Procédé et appareil pour la fabrication d'une cellule solaire au silicium en couche mince Download PDF

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Publication number
WO2011125251A1
WO2011125251A1 PCT/JP2010/069518 JP2010069518W WO2011125251A1 WO 2011125251 A1 WO2011125251 A1 WO 2011125251A1 JP 2010069518 W JP2010069518 W JP 2010069518W WO 2011125251 A1 WO2011125251 A1 WO 2011125251A1
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Prior art keywords
film
substrate
microcrystalline silicon
crystallization rate
forming
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PCT/JP2010/069518
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English (en)
Japanese (ja)
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賢治 新谷
幹雄 山向
晋作 山口
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三菱電機株式会社
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Priority to JP2012509273A priority Critical patent/JP5220239B2/ja
Publication of WO2011125251A1 publication Critical patent/WO2011125251A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
    • H01L31/1816—Special manufacturing methods for microcrystalline layers, e.g. uc-SiGe, uc-SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • microcrystalline silicon cells it is known that the crystallinity of the type I (intrinsic) microcrystalline silicon layer that serves as the power generation layer (ratio of the crystalline component to the amorphous component of the film) has a significant effect on the cell characteristics. . For this reason, in a plasma CVD apparatus for forming a microcrystalline silicon layer, it is necessary to manage the crystallization rate in addition to the control of film thickness and conductivity performed by a normal CVD apparatus.
  • the management of the crystallization rate of a microcrystalline silicon film was made by preparing a sample in which a microcrystalline silicon film was formed on a glass substrate, and transferring the sample to a crystallization rate evaluation apparatus to measure and manage the crystallization rate.
  • a crystallization rate evaluation apparatus to measure and manage the crystallization rate.
  • the transfer robot transfers the product substrate between the transfer chamber 30, the load lock chamber 20, and the film forming chambers A, B, and C.
  • the crystallization rate measuring means 40 a microscopic laser Raman spectroscopic device using Raman spectroscopy can be used, and the crystallization rate measurement result measured by the crystallization rate measuring means 40 indicates the film forming conditions of each film forming chamber. It is sent to the film forming condition control means 50 to be controlled.
  • the load lock chamber 20 is a space for carrying the product substrate into and out of the transfer chamber 30.
  • the load lock chamber 20 is connected to the transfer chamber 30 via the gate valve 60.
  • FIG. 4 is a flowchart for explaining the transport procedure of the product substrate in the plasma CVD apparatus 100 according to the present embodiment.
  • the procedure for conveying the product substrate will be described together with the procedure shown in FIG.
  • the gate valve 60 between the load lock chamber 20 and the transfer chamber 30 is opened.
  • the product substrate in the load lock chamber 20 is loaded on the arm of a transfer robot in the transfer chamber 30 and is vacuum transferred from the load lock chamber 20 to the film forming chamber A through the transfer chamber 30.
  • the crystallization rate of the N-type microcrystalline silicon film 5 of the amorphous silicon cell 6 formed on the outermost surface of the product substrate is measured by the crystallization rate measuring means 40 provided in the transfer chamber 30 (step) S22).
  • the measurement result of the crystallization rate is sent to the film forming condition control means 50 (step S41).
  • step S42 the film-forming condition control means 50 determines the film-forming conditions for the P-type microcrystalline silicon film 7 on the product substrate, and the film-forming conditions for the P-type microcrystalline silicon film 7 are plasma CVD.
  • Step S23 (FIG. 2, step S7).
  • the film forming conditions of the P-type microcrystalline silicon film 7 are controlled according to the result of the crystallization rate measurement of the N-type microcrystalline silicon film 5 of the amorphous silicon cell 6 by the crystallization rate measuring means 40.
  • the film forming condition control means 50 selects a film forming condition that causes the crystallization rate to be higher than usual so that the crystallization rate of the P-type microcrystalline silicon film 7 formed on the product substrate is substantially constant. It becomes possible to keep it.
  • the product substrate on which the P-type microcrystalline silicon film 7 is formed is loaded on the arm of the transfer robot in the transfer chamber 30 and is vacuum transferred from the film forming chamber A to the film forming chamber B through the transfer chamber 30.
  • the crystallization rate of the P-type microcrystalline silicon film 7 of the microcrystalline silicon cell 10 formed on the outermost surface of the product substrate is measured by the crystallization rate measuring means 40 provided in the transfer chamber 30 ( Step S24).
  • the measurement result of the crystallization rate is sent to the film forming condition control means 50 (step S43).
  • step S44 the film formation condition control means 50 determines the film formation conditions for the I-type microcrystalline silicon film 8 on the product substrate, and the film formation of the I-type microcrystalline silicon film 8 is performed by plasma CVD under the film formation conditions.
  • Step S25 (FIG. 2, step S8).
  • the film forming conditions of the I-type microcrystalline silicon film 8 are controlled according to the result of the crystallization rate measurement of the P-type microcrystalline silicon film 7 of the microcrystalline silicon cell 10 by the crystallization rate measuring means 40.
  • step S46 the film-forming condition control means 50 determines the film-forming conditions for the N-type microcrystalline silicon film 9 on the product substrate, and the film-forming conditions for the N-type microcrystalline silicon film 9 are plasma CVD.
  • Step S27 (FIG. 2, step S9).
  • the film forming conditions of the N-type microcrystalline silicon film 9 are controlled according to the result of the crystallization rate measurement of the I-type microcrystalline silicon film 8 of the microcrystalline silicon cell 10 by the crystallization rate measuring means 40.
  • FIG. 1 The cross-sectional structure of a two-layer tandem-type thin-film silicon solar cell using amorphous silicon and microcrystalline silicon manufactured by the method and apparatus for manufacturing a thin-film silicon solar cell according to Embodiment 2 of the present invention as the power generation layer is the same as in FIG. It is. Moreover, the flowchart explaining the procedure which manufactures the 2 layer tandem-type thin film silicon solar cell with the manufacturing method of the thin film silicon solar cell which concerns on this Embodiment is also the same as that of FIG.
  • the film forming chamber A is a film forming chamber for forming the P-type microcrystalline silicon film 7.
  • the film forming chamber B is a film forming chamber for forming the I-type microcrystalline silicon film 8.
  • the film forming chamber C is a film forming chamber for forming the N-type microcrystalline silicon film 9.
  • the film forming chambers A, B, and C are each connected to a transfer chamber via a gate valve.
  • the transfer chamber 30 is a space for transferring a substrate between the load lock chamber 20 and the film forming chambers A, B, and C.
  • the transfer chamber 30 includes a transfer robot (not shown) operable in vacuum, a crystallization rate measuring means 40 for measuring the crystallization rate of the microcrystalline silicon film on the product substrate, and the substrate temperature of the product substrate.
  • Substrate temperature measuring means 41 for measuring is provided.
  • the substrate temperature measuring means 41 may be provided in the transfer robot in the transfer chamber 30.
  • the gate valve 60 between the load lock chamber 20 and the transfer chamber 30 is opened.
  • the product substrate in the load lock chamber 20 is loaded on the arm of a transfer robot in the transfer chamber 30 and is vacuum transferred from the load lock chamber 20 to the film forming chamber A through the transfer chamber 30.
  • the crystallization rate of the N-type microcrystalline silicon film 5 of the amorphous silicon cell 6 formed on the outermost surface of the product substrate is measured by the crystallization rate measuring means 40 provided in the transfer chamber 30.
  • the substrate temperature is measured by the substrate temperature measuring means 41 provided in the transfer robot in the transfer chamber 30 (step S52).
  • the measurement results of the crystallization rate and the substrate temperature are sent to the film forming conditions and the substrate heating time control means 51 (step S61).
  • step S62 the film forming conditions and the substrate temperature raising time control means 51 determine the substrate temperature raising time and the film forming conditions of the P type microcrystalline silicon film 7 performed before the formation of the P type microcrystalline silicon film 7.
  • the substrate heating time after the substrate is heated, the P-type microcrystalline silicon film 7 is formed by plasma CVD under the film forming conditions (step S53) (FIG. 2, step S7).
  • the film forming conditions for the P-type microcrystalline silicon film 7 are determined by the same method as in the first embodiment, and the substrate heating time before forming the P-type microcrystalline silicon film 7 is the film forming chamber by the substrate temperature measuring means 41. Control is performed according to the result of the substrate temperature measurement immediately before being transferred to A.
  • the substrate temperature rise before the P-type microcrystalline silicon film 7 is formed is longer than the normal temperature raising time. It is expected to reach a predetermined temperature in a short time.
  • the film formation conditions and the substrate temperature increase time control means 51 can shorten the substrate temperature increase time before the formation of the P-type microcrystalline silicon film 7 by setting the substrate temperature increase time shorter than usual. It is possible to improve.
  • the product substrate on which the P-type microcrystalline silicon film 7 is formed is loaded on the arm of the transfer robot in the transfer chamber 30 and is vacuum transferred from the film forming chamber A to the film forming chamber B through the transfer chamber 30.
  • the crystallization rate of the P-type microcrystalline silicon film 7 of the microcrystalline silicon cell 10 formed on the outermost surface of the product substrate is measured by the crystallization rate measuring means 40 provided in the transfer chamber 30.
  • the substrate temperature is measured by the substrate temperature measuring means 41 provided in the transfer robot in the transfer chamber 30 (step S54).
  • the measurement results of the crystallization rate and the substrate temperature are sent to the film forming conditions and the substrate heating time control means 51 (step S63).
  • the substrate temperature rise before the I-type microcrystalline silicon film 8 is formed is longer than the normal temperature raising time. It is expected to reach a predetermined temperature in a short time.
  • the film formation conditions and the substrate temperature increase time control means 51 can shorten the substrate temperature increase time before the formation of the I-type microcrystalline silicon film 8 by setting the substrate temperature increase time shorter than usual. It is possible to improve.
  • the product substrate on which the I-type microcrystalline silicon film 8 is formed according to the film forming conditions and the film forming conditions determined by the substrate heating time control means 51 is loaded on the arm of the transfer robot in the transfer chamber 30 and the film forming chamber B Is transferred to the film forming chamber C through the transfer chamber 30.
  • the crystallization rate of the I-type microcrystalline silicon film 8 of the microcrystalline silicon cell 10 formed on the outermost surface of the product substrate is measured by the crystallization rate measuring means 40 provided in the transfer chamber 30.
  • the substrate temperature is measured by the substrate temperature measuring means 41 provided in the transfer robot in the transfer chamber 30 (step S56).
  • the measurement results of the crystallization rate and the substrate temperature are sent to the film forming conditions and the substrate heating time control means 51 (step S65).
  • FIG. 9 is a diagram schematically showing the relationship between the substrate heating time and the temperature of the substrate loaded on the stage heater.
  • the temperature of the substrate loaded on the stage heater rises with time and saturates at the stage heater temperature.
  • the substrate temperature rise time T until the substrate temperature reaches the stage heater temperature becomes longer as the substrate temperature (initial substrate temperature Ts) before introduction of the film forming chamber is lower than the stage heater temperature.
  • a long substrate heating time T (here, T1) is set based on the lowest assumed initial substrate temperature Ts (for example, Ts1).
  • the plasma CVD apparatus is described as an example of the CVD apparatus for forming the microcrystalline silicon film.
  • the CVD method is not limited to this, and other methods such as hot wire CVD are used. The same effect can be obtained even by the CVD method.

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  • Chemical & Material Sciences (AREA)
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  • Power Engineering (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire au silicium en couche mince, qui comprend : des étapes de mesure (S22, 24, 26) qui consistent à mesurer la vitesse de cristallisation d'un film destiné à être un film de base, ledit film étant formé sur un substrat par CVD et contenant un composé de silicium cristallin à grains fins ; des étapes (S42, 44, 46) qui, sur la base de relations préalablement obtenues entre la vitesse de cristallisation du film de base, les conditions de formation du film sur le film de base et la vitesse de cristallisation du film formé sur le film de base par CVD dans lesdites conditions, consistent à déterminer des conditions de formation de film en fonction de la vitesse de cristallisation mesurée lors des étapes de mesure et de la vitesse de cristallisation souhaitée pour le film qui est formé sur le film de base et qui contient le composé de silicium cristallin à grains fins ; et des étapes (S23, 25, 27) qui consistent à former le film contenant le composé de silicium cristallin à grains fins par CVD sur le film de base dans les conditions de formation de film déterminées, dans une deuxième chambre de formation de film qui est différente de la première chambre de formation de film dans laquelle est formé le film de base, le substrat pouvant être transféré sous vide de la première chambre de formation de film à la deuxième.
PCT/JP2010/069518 2010-04-09 2010-11-02 Procédé et appareil pour la fabrication d'une cellule solaire au silicium en couche mince WO2011125251A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003073515A1 (fr) * 2002-02-28 2003-09-04 National Institute Of Advanced Industrial Science And Technology Cellule solaire a couche mince et procede permettant de produire cette cellule
JP2004363577A (ja) * 2003-05-13 2004-12-24 Kyocera Corp 半導体薄膜およびそれを用いた光電変換装置ならびに光発電装置
JP2005244071A (ja) * 2004-02-27 2005-09-08 Sharp Corp 太陽電池およびその製造方法
JP2006032800A (ja) * 2004-07-20 2006-02-02 Mitsubishi Heavy Ind Ltd プラズマ処理装置、太陽電池及び太陽電池の製造方法
JP2006073878A (ja) * 2004-09-03 2006-03-16 Sharp Corp 光電変換装置およびその製造方法
WO2008078471A1 (fr) * 2006-12-25 2008-07-03 Sharp Kabushiki Kaisha Convertisseur photoélectrique et procédé de fabrication de celui-ci

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003073515A1 (fr) * 2002-02-28 2003-09-04 National Institute Of Advanced Industrial Science And Technology Cellule solaire a couche mince et procede permettant de produire cette cellule
JP2004363577A (ja) * 2003-05-13 2004-12-24 Kyocera Corp 半導体薄膜およびそれを用いた光電変換装置ならびに光発電装置
JP2005244071A (ja) * 2004-02-27 2005-09-08 Sharp Corp 太陽電池およびその製造方法
JP2006032800A (ja) * 2004-07-20 2006-02-02 Mitsubishi Heavy Ind Ltd プラズマ処理装置、太陽電池及び太陽電池の製造方法
JP2006073878A (ja) * 2004-09-03 2006-03-16 Sharp Corp 光電変換装置およびその製造方法
WO2008078471A1 (fr) * 2006-12-25 2008-07-03 Sharp Kabushiki Kaisha Convertisseur photoélectrique et procédé de fabrication de celui-ci

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