WO2011124044A1 - 硅片的磨削/电解复合多线切割加工方法 - Google Patents

硅片的磨削/电解复合多线切割加工方法 Download PDF

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WO2011124044A1
WO2011124044A1 PCT/CN2010/075147 CN2010075147W WO2011124044A1 WO 2011124044 A1 WO2011124044 A1 WO 2011124044A1 CN 2010075147 W CN2010075147 W CN 2010075147W WO 2011124044 A1 WO2011124044 A1 WO 2011124044A1
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wire
cutting
silicon
grinding
metal
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French (fr)
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汪炜
刘正勋
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Nanjing University of Aeronautics and Astronautics
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Nanjing University of Aeronautics and Astronautics
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/10—Electrodes specially adapted therefor or their manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00—Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/02—Wire-cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H9/00—Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H1/00—Electrical discharge machining, i.e. removing metal with a series of rapidly recurring electrical discharges between an electrode and a workpiece in the presence of a fluid dielectric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00—Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/02—Wire-cutting
    • B23H7/08—Wire electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • the invention relates to a method for cutting a silicon wafer by using a grinding/electrolytic composite processing technology, in particular to a method for grinding an electrolytic composite multi-wire cutting silicon wafer. This method is also suitable for grinding electrolytic composite multi-wire cutting of semiconductor materials.
  • Wafers are the main raw material for the semiconductor and photovoltaic industry chain.
  • Multi-wire cutting (MWS: Multi-Wire-Slicing is a process for cutting brittle hard materials (such as silicon ingots). It is different from traditional internal and external cutting methods. The principle is to pass a high-speed moving metal cutting line. (usually steel wire) drives the free abrasive (or consolidated abrasive, which is more efficient, but also costly) attached to it to grind the ingot to achieve the cutting purpose.
  • the wire is guided by the wire wheel to form a wire mesh on the main wire roller, and the workpiece to be processed is fed by the movement of the table, and hundreds of slices can be cut at the same time. Compared with other cutting methods, it has significant advantages such as high efficiency and high precision.
  • the total thickness variation (TTV) and the degree of warpage (Warp) of the silicon wafer obtained by the wire-cut electric discharge machining method are almost the same as those of the multi-wire cutting.
  • the silicon material loss caused by the slit is about 250 ⁇ m, which is equivalent to the value obtained by the multi-wire cutting method.
  • the discharge energy is large, the surface of the silicon wafer has a significant heat affected zone, and the processing efficiency is not high (currently the highest cutting efficiency is ⁇ 100 mm 2 /min), and there is no Considering the problem of residual metal elements on the surface of the silicon wafer, it is currently not compatible with the manufacturing process of the solar wafer battery.
  • Nanjing University of Aeronautics and Astronautics used the method of electric spark/electrolytic composite processing to study the cutting and texturing of solar wafers (invention patent No.: ZL200710025572.5).
  • the heat affected zone and metal element residues were effectively controlled.
  • the efficiency of single piece cutting is greatly improved.
  • the discharge current is too large to be broken, which makes the method unsuitable for use in the multi-wire cutting technique.
  • the object of the present invention is to solve the conventional silicon wafer multi-wire cutting method. Because the grinding action is mainly used, the large mechanical cutting force limits the further reduction of the wire diameter, which makes the thickness of the silicon wafer and the slit width difficult to further. Reduction, cutting efficiency is also difficult to improve, unable to meet the bottleneck problem of the growing demand for silicon wafers (especially solar wafers), inventing a silicon ingot by applying a low-voltage continuous (or pulsed) DC power supply in a metal cutting line.
  • the composite anode (silicon rod or silicon ingot) is passivated (or corroded), thereby reducing the macroscopic cutting force, and realizing a multi-line cutting processing method for large-sized ultra-thin silicon wafer grinding/electrolysis composite.
  • the abrasive (the free abrasive is usually silicon carbide, the fixed abrasive is usually diamond fine powder) makes the surface of the metal cutting wire (usually steel wire) and silicon A certain electrolytic gap is formed between the ingots ( ⁇ 0.02 Mm), while feeding the cutting fluid to the gap, the surface of the silicon ingot is formed by the electrolysis to form a passivation film under the action of the DC electric field; these electrolysis products and silicon materials are continuously scraped off by the abrasive entrained by the rapidly moving metal cutting line. After the surface of the fresh silicon is exposed, electrolysis will continue to occur, and the material removal process can be repeated to achieve the cutting purpose.
  • the above composite cutting method will promote the improvement of cutting efficiency and surface integrity, and reduce the probability of wire breakage. Due to the semiconductor characteristics of the silicon wafer and the low conductivity of the cutting fluid, the actual electrolytic current is less than the limit that the metal cutting line can withstand, and can meet the production requirements of cutting hundreds of pieces at the same time.
  • a method for grinding/electrolytic composite multi-wire cutting of silicon wafers characterized in that:
  • the metal cutting line on the multi-line cutting machine is used as the tool electrode (cathode).
  • the wire speed is adjustable between 100 and 1000 m/min, the tension is controlled between 10 and 40 N, and the silicon rod or silicon ingot (anode) ) performing grinding/electrolytic compound cutting processing;
  • the metal cutting wire and the silicon rod (or silicon ingot) are externally connected to a low-voltage continuous (or pulse) DC power supply through a dedicated power-in method, and the voltage amplitude is adjustable between 0 and 30V. Adjustable between 0 and 10 to meet anode passivation (or corrosion) requirements;
  • a cutting fluid having a conductivity of ⁇ 500 ⁇ S/cm is sprayed in the cutting area to meet the needs of cooling and anode passivation (or corrosion).
  • the metal cutting wire is a copper-plated alloy steel wire or a diamond-bonded abrasive spring steel wire for a multi-wire cutting machine, and has a wire diameter of ⁇ 0.2 mm.
  • the silicon rod is a doped or intrinsic single crystal silicon material, and the silicon ingot is a doped or intrinsic polysilicon material.
  • the cutting fluid is a special water-soluble cutting fluid for multi-wire cutting machine currently available on the market, and other additives suitable for grinding/electrolysis can be added as needed, so as not to affect the normal service life and working state of the multi-wire cutting machine. Prevail.
  • Electrolysis is beneficial to the reduction of mechanical cutting force, and the cutting product has the function of abrasive, which can reduce the probability of broken wire and improve the cutting efficiency of silicon wafer;
  • the mechanical grinding effect is beneficial to the continuous progress of electrochemical passivation (or corrosion).
  • the mechanical damage layer of the silicon wafer is thinner and the surface integrity is good, which reduces the subsequent thinning amount and improves the material utilization rate.
  • Thinner cutting lines and less (or finer) abrasives can be used to reduce wafer thickness and slit width, further improving material utilization, especially for greater than 200
  • the mm wafer has a slit width and a silicon wafer thickness of less than 150 ⁇ m, thus breaking the limits of traditional multi-wire cutting.
  • Figure 1 is a schematic representation of the process of the invention.
  • FIG. 2 is a schematic flow chart showing the implementation of the method of the present invention.
  • Fig. 3 is a schematic diagram showing the voltage null carrier shape of a low voltage DC power supply for grinding/electrolytic composite processing.
  • Label name 1-silicon rod or silicon ingot, 2-glass, 3-metal electrode, 4-binder, 5-metal substrate, 6-table, 7-machine body, 8-positive cable, 9 DC power supply, 10-metal cutting wire, 11-main wire roller, 12-negative cable , 13-input block, 14 nozzles.
  • the grinding/electrolytic composite multi-wire cutting method of silicon wafer is shown in Fig. 1.
  • a special input method for grinding/electrolytic composite multi-wire cutting of silicon wafer adding a metal electrode 3 (such as a porous copper clad plate, a copper mesh, etc.) between the silicon rod or the silicon ingot 1 and the glass 2, using the adhesive 4 Bonding the silicon rod or the silicon ingot 1 to the glass 2 and ensuring good electrical conductivity of the silicon rod or the silicon ingot 1 and the metal electrode 3, the glass is mounted on the metal substrate 5, and is mounted and fixed on the workbench by its positioning 6, maintaining electrical insulation from the machine body 7, and then connecting the lead portion of the metal electrode 3 to the positive pole of the low voltage continuous (or pulse) DC power source 9 through the positive cable 8, thereby realizing the silicon rod or the silicon ingot 1 and the low pressure continuous ( Or the pulse) the positive electrode of the DC power source 9 is connected, the metal cutting wire 10 passes through the main wire roller 11, and is connected to the negative electrode of the low-voltage DC power source 9 through the negative electrode cable 12 through the negative electrode cable 12.
  • the cutting fluid is s
  • a method for grinding/electrolytic compound multi-wire cutting of a solar wafer comprising the following steps:
  • the solar silicon rod (ingot) is mounted on the workbench of the multi-line cutting machine tool, and the working platform has a control mechanism for lifting movement, and the feed speed is 0.1 ⁇ 2mm/min;
  • the voltage amplitude is adjustable between 0 ⁇ 30V
  • the duty cycle is adjustable between 0 ⁇ 10
  • the choice of continuous (or pulsed) mode of operation may control the electrochemical effect
  • the copper-plated alloy steel wire is connected to the negative electrode of the power source by adding a power feeding device to the copper-plated alloy steel wire to enter and leave the cutting region;
  • the silicon rod or ingot is connected to the positive pole of the power supply and bonded to the glass placed on the table by an adhesive and electrically insulated from the machine body.
  • the copper-plated alloy steel wire enters the cutting zone according to the one-way or reciprocating motion, and the wire speed is adjustable between 100 and 1000 m/min.
  • the cutting of the conductivity less than 500 ⁇ S/cm is continuously sprayed in the cutting zone to meet the needs of cooling and electrolysis;
  • the cutting fluid is an aqueous cutting fluid
  • the main component is a base material such as polyethylene glycol, which may be a water-based cutting fluid with a large water content, or a water-soluble cutting fluid containing a trace amount of water or substantially no water, and the latter
  • the equipment is less corrosive.
  • a silicon carbide abrasive having a particle size of less than 20 ⁇ m is mixed into the cutting fluid, and the arrangement ratio is 1:0.1 to 1, and the dispersion is uniform.
  • Voltage amplitude, pulse width and duty cycle can be achieved by conventional circuits
  • the power-in mode is based on the principle that the electrical circuit is not generated with the machine body, and the power-in area is selected close to the processing area;
  • cutting fluid is the special aqueous cutting fluid for multi-wire cutting machine that can be purchased on the market.
  • Other additives suitable for grinding/electrolysis can be added as needed, so as not to affect the normal service life and working state of the multi-wire cutting machine. .
  • the embodiment adopts a copper-plated alloy steel wire and a silicon carbide free abrasive cutting silicon wafer, and the particle shape and particle size of the silicon carbide fine powder, the viscosity and flow rate of the cutting fluid and the mortar, the speed and tension of the steel wire due to the composite electrolysis. Process factors such as workpiece feed rate will have a positive impact, and specific indicators will be determined by actual processing conditions.
  • a method for grinding/electrolytic composite multi-wire cutting of a solar wafer the steps of which are:
  • copper-plated alloy steel wire (wire diameter less than 0.2mm) is selected, the wire speed is adjustable (adjustment range is 100-1000m/min), and constant tension is maintained (adjustment range 10 ⁇ 40N);
  • a low-voltage pulsed DC power supply (adjustable voltage between 0 and 30V and adjustable duty cycle between 1:10) is used to meet the electrochemical corrosion on the surface of silicon material. Requirements, as shown in Figure 3;
  • the silicon wafer is separated and cleaned, and the solar wafer with good surface integrity (that is, meeting the flatness, total thickness error and surface quality requirement) can be obtained.
  • a method for grinding/electrolytic compound multi-wire cutting of a solar wafer comprising the following steps:
  • the solar silicon rod (or silicon ingot) is mounted on the workbench of the multi-line cutting machine tool, and the working platform has a control mechanism for lifting movement, and the feed speed is 0.1 ⁇ 2 mm/min;
  • the diamond-bonded abrasive spring wire is connected to the negative pole of the power source by adding a power feeding device to the diamond-bonded abrasive spring wire into and out of the cutting area;
  • the silicon rod or ingot is connected to the positive pole of the power supply and bonded to the glass placed on the table by an adhesive and electrically insulated from the machine body.
  • Diamond-bonded abrasive spring steel wire enters the cutting zone according to one-way or reciprocating motion, and the wire speed is adjustable between 100 and 1000 m/min.
  • the cutting fluid with conductivity less than 500 ⁇ S/cm is continuously sprayed in the cutting zone to meet the needs of cooling and electrolysis;
  • the cutting fluid is an aqueous cutting fluid
  • the main component is a base material such as polyethylene glycol, which may be a water-based cutting fluid with a large water content, or a water-soluble cutting fluid containing a trace amount of water or substantially no water, and the latter
  • the equipment is less corrosive.
  • Voltage amplitude, pulse width and duty cycle can be achieved by conventional circuits
  • the power-in mode is based on the principle that the electrical circuit is not generated with the machine body, and the power-in area is selected close to the processing area;
  • cutting fluid is the special aqueous cutting fluid for multi-wire cutting machine that can be purchased on the market.
  • Other additives suitable for grinding/electrolysis can be added as needed, so as not to affect the normal service life and working state of the multi-wire cutting machine. .
  • This embodiment uses a diamond-bonded abrasive spring wire to cut the silicon wafer. Due to the combined electrolysis, the grain size and particle size of the diamond-bonded abrasive, the viscosity and flow rate of the cutting fluid, the speed and tension of the steel wire, and the workpiece feed. Process factors such as speed will have a positive impact, and specific indicators will be determined by actual processing conditions.
  • a method for grinding/electrolytic composite multi-wire cutting of a solar wafer the steps of which are:
  • the lifting stroke of the table is larger than the diameter of the silicon ingot (or the side length);
  • diamond-bonded abrasive spring steel wire (wire diameter less than 0.2mm) is selected, the wire speed is adjustable (adjustment range is 100-1000m/min), and constant tension is maintained (adjustment range 10 ⁇ 40N) ;
  • a low-voltage continuous DC power supply (adjustable between 0 and 30V voltage amplitude) is used to maintain electrochemical corrosion on the surface of the silicon material, as shown in Fig. 3;
  • the silicon wafer is separated and cleaned, and the solar wafer with good surface integrity (that is, meeting the flatness, total thickness error and surface quality requirement) can be obtained.

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Description

硅片的磨削/电解复合多线切割加工方法 技术领域
本发明涉及一种利用磨削/电解复合加工技术对硅片进行切割的方法，具体地说是一种磨削电解复合多线切割硅片的方法。此方法同样适合于对半导体材料进行磨削电解复合多线切割加工。
背景技术
硅片是半导体和光伏产业链中的主要生产原料。多线切割（MWS: Multi-Wire-Slicing）是进行脆硬材料（如硅锭等）切割的一种工艺方法，它不同于传统的内圆和外圆等切割方式，其原理是通过一根高速运动的金属切割线（通常为钢丝）带动附着在其上的游离磨料（或固结磨料，生产效率更高，但成本也高）对硅锭进行磨削，从而达到切割目的。在整个切割过程中，钢丝通过导线轮的引导，在主线辊上形成一张线网，通过工作台的运动实现待加工工件的进给，可以同时切割出几百个切片。与现有其他切割方法相比，具有高效、高精度等显著优点。
尽管目前已能采用多线切割方法生产出面积较大(30cm×30cm)而又较薄的硅片，但由于仍属于非刚性切割，在切割过程中金属切割线必然产生变形从而不断对切割硅片产生瞬间的冲击作用，同时，还要兼顾切缝内钢丝的冷却问题，要使目前的大尺寸硅片厚度进一步降低，并提高硅片切割厚度和控制切割损耗，实现低成本高效切割，技术难度相当大。
近年来，国内外针对硅片切割技术的应用需求，除了进行多线切割研究之外，也在寻找新的加工途径，如电火花线切割方法，电极丝通常为铜丝或钼丝。比利时鲁文大学采用低速走丝电火花线切割技术进行了硅片切割研究，日本岡山大学采用电火花线切割技术（WEDM），以去离子水作为工作液，进行了单晶硅棒切割加工研究，并研制了多线放电切割原理样机（由多个独立的运丝系统组成）。该方法的依据是取向生长法形成的单晶硅锭具有很低的电阻率(0.01Ω•cm)，使得用线切割放电加工技术切割硅锭成为可能。用线切割放电加工法所获得的硅片总厚度变化（TTV）和弯曲程度（Warp）与多线切割结果几乎一样。切缝造成的硅材料损失大约为250μm，与多线切割法得到的数值相当。但是，在上述相关研究中，由于采用去离子水作为工作介质，放电能量较大，硅片表面有明显的热影响区，加工效率不高（目前最高切割效率<100mm2/min），并且没有考虑硅片表面金属元素残留问题，所以，目前尚不能与太阳能硅片电池制造工艺兼容。
南京航空航天大学采用电火花/电解复合加工的方法，对太阳能硅片进行了切割制绒一体化研究（发明专利授权号：ZL200710025572.5），热影响区和金属元素残留均得到了有效控制，单片切割效率大为提高。但是，当进行硅片的多线切割时，放电电流过大容易断丝，使该方法在多线切割技术中无法得到应用。
美国应用材料有限公司研究了以电化学机械研磨法进行衬底平坦化（发明专利授权号：ZL02803505.4），实现了用较低的衬底与研磨设备之间的接触压力来平坦化衬底表面的方法。
 技术问题
本发明目的是针对现有硅片多线切割方法，由于主要以磨削作用为主，较大的机械切削力限制了钢丝线径的进一步减小，导致硅片厚度和切缝宽度很难进一步降低，切割效率也很难提高，无法满足硅片（特别是太阳能硅片）日益增长需求等存在的瓶颈问题，发明一种通过外加低压连续（或脉冲）直流电源，在金属切割线对硅锭进行机械磨削的同时，复合阳极（硅棒或硅锭）钝化（或腐蚀），进而降低宏观切削力，实现大尺寸超薄硅片磨削/电解复合的多线切割加工方法。
具体地说，就是在金属切割线与硅锭之间保持一定的磨削压力，磨料（游离磨料通常为碳化硅，固结磨料通常为金刚石微粉）使金属切割线（通常为钢丝）表面与硅锭之间形成一定的电解间隙（<0.02 mm），同时向间隙中供给切削液，在直流电场的作用下，硅锭表面由于电解作用生成钝化膜；这些电解产物和硅材料不断地被快速移动的金属切割线所夹带的磨料刮除；新鲜硅表面露出后，将继续产生电解作用，材料去除过程得以不断重复下去，从而达到切割目的。
上述复合切割方法将促进切割效率和表面完整性的提高，降低断丝几率。由于硅片的半导体特性，且切削液电导率很低，实际电解电流小于金属切割线所能承受的极限，可以满足同时切割数百片以上的生产需求。
 技术解决方案
一种硅片的磨削/电解复合多线切割加工方法，其特征是：
首先，以多线切割机床上的金属切割线作为工具电极（阴极），走丝速度在100～1000m/min之间可调，张力控制在10~40N之间，对硅棒或硅锭（阳极）进行磨削/电解复合切割加工；
其次，在加工过程中，通过专用进电方法，将金属切割线和硅棒（或硅锭）外接低压连续（或脉冲）直流电源，电压幅值在0～30V之间可调，占空比在0～10之间可调，以满足阳极钝化（或腐蚀）要求为准；
第三，在切割区域喷射电导率<500μS/cm的切削液，以满足冷却和阳极钝化（或腐蚀）的需要。
所述的金属切割线为多线切割机用镀铜合金钢丝或金刚石固结磨料弹簧钢丝，丝径<0.2mm。
所述的硅棒为掺杂或本征的单晶硅材料，所述的硅锭为掺杂或本征的多晶硅材料。
所述的切削液为目前市场上可以购买的多线切割机专用水溶性切削液，视需要可以添加其它有利于磨削/电解作用的添加剂，以不影响多线切割机正常使用寿命和工作状态为准。
 有益效果
1、电解作用有利于机械切削力的减小，切割产物兼具磨料作用，可以降低断丝几率，提高硅片切割效率；
2、机械磨削作用有利于电化学钝化（或腐蚀）的持续进行，硅片机械损伤层更薄，表面完整性好，减少了后续减薄量，提高了材料利用率。
3．可以采用更细的切割线和更少（或细）的磨料，从而减小硅片厚度和切缝宽度，进一步提高材料利用率，特别是针对大于200 mm的硅片，切缝宽度与硅片厚度均可小于150μm，从而突破传统多线切割加工的极限。
4、为多线切割装备的发展提供新的技术途径，可以方便移植到已有或正在研发的多线切割设备上。
 附图说明
图1是本发明方法的示意图。
图2是本发明方法的实现流程示意图。
图3实现磨削/电解复合加工的低压直流电源电压空载波形示意图。
标号名称：1-硅棒或硅锭，2-玻璃， 3-金属电极，4-粘结剂，5-金属基板，6-工作台，7-机床本体，8-正极电缆，9直流电源，10-金属切割线，11-主线辊，12-负极电缆，13-进电块，14喷嘴。
本发明的实施方式
下面结合附图和实施例对本发明作进一步的说明。
硅片的磨削/电解复合多线切割方法如图1所示。
硅片的磨削/电解复合多线切割的专用进电方法，在硅棒或硅锭1与玻璃2之间增加一金属电极3（如多孔覆铜板、铜网等），利用粘结剂4将硅棒或硅锭1与玻璃2粘结在一起，并保证硅棒或硅锭1与金属电极3良好的导电性，玻璃安装在金属基板5上，并通过其定位与固定安装在工作台6上，保持与机床本体7的电气绝缘，然后通过正极电缆8将金属电极3的引出部分与低压连续（或脉冲）直流电源9的正极相连，从而实现硅棒或硅锭1与低压连续（或脉冲）直流电源9的正极相连，金属切割线10经过主线辊11，通过负极电缆12由进电块13与低压直流电源9负极相连，加工过程中，切削液有喷嘴14喷出。
实施例一。
一种太阳能硅片的磨削/电解复合多线切割加工方法，它包括以下步骤：
①将太阳能硅棒（锭）安装在多线切割机床的工作台上，该工作台具有升降运动的控制机构，进给速度0.1~2mm/min；
②镀铜合金钢丝和硅棒（或硅锭）外接低压连续（或脉冲）直流电源，电压幅值在0～30V之间可调，占空比在0～10之间可调，以满足阳极钝化（或腐蚀）要求为准，连续（或脉冲）工作方式的选择可以控制电化学作用效果；
通过在镀铜合金钢丝进入和离开切割区域增加进电装置，使镀铜合金钢丝与电源负极相连；
硅棒或硅锭与电源正极相连，并通过粘结剂与置于工作台上的玻璃粘结在一起，且与机床本体电气绝缘。
③镀铜合金钢丝按照单向或往复运动方式进入切割区，运丝速度在100～1000m/min之间可调。
④根据太阳能硅棒（锭）的电阻率（通常在0.5~3Ω•cm），在切割区连续喷射电导率小于500μS/cm的切削，以满足冷却和电解的需要；
其中切削液为水性切削液，主要成分为聚乙二醇等基础物质，可以为含水量较大的水基切削液，也可以为含微量水或基本不含水的水溶性切削液，后者对设备腐蚀性小。
切削液中混入粒度小于20μm的碳化硅磨料，配置比例为1:0.1~1，分散均匀。
由上可知，低压直流电源参数、进电方式及切削液等是保证本发明实施的重要因素。
电压幅值、脉冲宽度及占空比等可通过常规的电路加以实现；
进电方式以不与机床本体产生电气回路为基本选择原则，进电区域则以靠近加工区为选择原则；
切削液的选择为目前市场上可以购买的多线切割机专用水性切削液，视需要可以添加其它有利于磨削/电解作用的添加剂，以不影响多线切割机正常使用寿命和工作状态为准。
该实施方式采用的是镀铜合金钢丝和碳化硅游离磨料切割硅片，由于复合了电解作用，对碳化硅微粉的粒型及粒度、切削液和砂浆的粘度及流量、钢线的速度及张力、工件进给速度等工艺因素将产生积极的影响，具体指标由实际加工情况确定。
详述如下：
一种太阳能硅片的磨削/电解复合多线切割加工方法，其步骤为：
①准备太阳能硅棒（或硅锭），安装在可以实现升降运动的工作台上，工作台升降行程大于硅锭直径（或边长）；
②基于磨削/电解复合加工原理，选用镀铜合金钢丝（丝径小于0.2mm），丝速可调（调节范围为100～1000m/min），保持恒张力（调节范围10~40N）；
③根据太阳能硅棒（锭）的电阻率（通常在0.5~3Ω•cm），选择合适电导率（小于500μS/cm）的切削液；
④为减少气泡对切割过程的影响，采用低压脉冲直流电源（电压幅值0~30V之间可调，占空比在1:10之间可调），以满足在硅材料表面产生电化学腐蚀的要求，如图3所示；
⑤采用对应的伺服控制策略，根据硅片切割速度的不同，采用不同的伺服跟踪策略；
⑥当切割到硅棒或硅锭根部时，关闭外接低压脉冲直流电源，取消电解作用，恢复传统多线切割方式；
⑦切割完毕后，分离、清洗硅片，此时可以得到表面完整性好（即满足平整度、总厚度误差及表面质量要求）的太阳能硅片。
实施例二。
一种太阳能硅片的磨削/电解复合多线切割加工方法，它包括以下步骤：
①将太阳能硅棒（或硅锭）安装在多线切割机床的工作台上，该工作台具有升降运动的控制机构，进给速度0.1~2mm/min；
②金刚石固结磨料弹簧钢丝和硅锭（或硅棒）外接连续（或脉冲）低压直流电源，电压幅值在0～30V之间可调，占空比在0～10之间可调，以满足阳极钝化（或腐蚀）要求为准，连续（或脉冲）工作方式的选择可以控制电化学作用效果；
通过在金刚石固结磨料弹簧钢丝进入和离开切割区域增加进电装置，使金刚石固结磨料弹簧钢丝与电源负极相连；
硅棒或硅锭与电源正极相连，并通过粘结剂与置于工作台上的玻璃粘结在一起，且与机床本体电气绝缘。
③金刚石固结磨料弹簧钢丝按照单向或往复运动方式进入切割区，运丝速度在100～1000m/min之间可调。
④根据太阳能硅棒（或硅锭）的电阻率（通常在0.5~3Ω•cm），在切割区连续喷射电导率小于500μS/cm的切削液，以满足冷却和电解的需要；
其中切削液为水性切削液，主要成分为聚乙二醇等基础物质，可以为含水量较大的水基切削液，也可以为含微量水或基本不含水的水溶性切削液，后者对设备腐蚀性小。
由上可知，低压直流电源参数、进电方式及切削液等是保证本发明实施的重要因素。
电压幅值、脉冲宽度及占空比等可通过常规的电路加以实现；
进电方式以不与机床本体产生电气回路为基本选择原则，进电区域则以靠近加工区为选择原则；
切削液的选择为目前市场上可以购买的多线切割机专用水性切削液，视需要可以添加其它有利于磨削/电解作用的添加剂，以不影响多线切割机正常使用寿命和工作状态为准。
该实施方式采用的是金刚石固结磨料弹簧钢丝切割硅片，由于复合了电解作用，对金刚石固结磨料的粒型及粒度、切削液的粘度及流量、钢线的速度及张力、工件进给速度等工艺因素将产生积极的影响，具体指标由实际加工情况确定。
详述如下：
一种太阳能硅片的磨削/电解复合多线切割加工方法，其步骤为：
①准备待加工硅棒（或硅锭），安装在可以实现升降运动的工作台上，工作台升降行程大于硅锭直径（或边长）；
②基于磨削/电解复合加工原理，选用金刚石固结磨料弹簧钢丝（丝径小于0.2mm），丝速可调（调节范围为100～1000m/min），保持恒张力（调节范围10~40N）；
③根据太阳能硅棒（锭）的电阻率（通常在0.5~3Ω•cm），选择合适电导率（小于500μS/cm）的切削液；
④由于采用金刚石固结磨料弹簧钢丝切割，采用低压连续直流电源（电压幅值0~30V之间可调），以维持在硅材料表面产生电化学腐蚀，如图3所示；
⑤采用对应的伺服控制策略，根据硅片切割速度的不同，采用不同的伺服跟踪策略；
⑥当切割到硅棒或硅锭根部时，关闭外接低压直流电源，取消电解作用，恢复传统多线切割方式；
⑦切割完毕后，分离、清洗硅片，此时可以得到表面完整性好（即满足平整度、总厚度误差及表面质量要求）的太阳能硅片。

Claims (6)

  1. 一种硅片的磨削/电解复合多线切割加工方法，其特征是：
    首先，以多线切割机床上的金属切割线作为工具电极（阴极），通过专用进电方法，对硅棒或硅锭（阳极）进行磨削/电解复合多线切割加工；
    其次，在加工过程中，将金属切割线和硅棒或硅锭外接低压连续或脉冲直流电源；
    第三，在切割区域喷射切削液，以满足浆料供给或冷却、产物排除以及阳极钝化或腐蚀的需要；
    所述的专用进电方法如下：在硅棒或硅锭（1）与玻璃（2）之间增加一金属电极（3），利用粘结剂（4）将硅棒或硅锭（1）与玻璃（2）粘结在一起，并实现硅棒或硅锭（1）与金属电极（3）良好的导电性，玻璃安装在金属基板（5）上，并通过其定位与固定安装在工作台（6）上，保持与机床本体（7）的电气绝缘，然后通过电缆（8）将金属电极（3）的引出部分与低压连续或脉冲直流电源（9）的正极相连，从而实现硅棒或硅锭（1）与低压连续或脉冲直流电源（9）的正极相连，金属切割线（10）经过主线辊（11），由进电块（12）与低压连续或脉冲直流电源（9）负极相连。
  2. 根据权利要求1所述的硅片磨削/电解复合多线切割加工方法，其特征是所述的金属切割线为多线切割机用镀铜合金钢丝或金刚石固结磨料弹簧钢丝，丝径<0.2mm，单向或往复运动，走丝速度在100～1000m/min之间可调，张力控制在10~40N之间可调。
  3. 根据权利要求1所述的硅片磨削/电解复合多线切割加工方法，其特征是所述的硅棒为掺杂或本征的单晶硅材料，所述的硅锭为掺杂或本征的多晶硅材料。
  4. 根据权利要求1所述的硅片磨削/电解复合多线切割加工方法，其特征是所述的低压连续或脉冲直流电源，电压幅值在0～30V之间可调，电压脉冲占空比在0～10之间可调，根据不同切割材料，以满足阳极钝化或腐蚀要求为准。
  5. 根据权利要求1所述的硅片磨削/电解复合多线切割加工方法，其特征是所述的专用进电方法，为确保不影响多线切割机的正常使用，将其原断丝保护信号通过电气隔离方式提供给机床控制系统。
  6. 据权利要求1所述的硅片磨削/电解复合多线切割加工方法，其特征是所述的切削液为多线切割机专用水性切削液，电导率<500μS/cm，视加工需要添加其它有利于磨削/电解作用的添加剂，以不影响多线切割机正常使用寿命和工作状态为准。
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