WO2011118444A1 - Electronic control device - Google Patents

Electronic control device Download PDF

Info

Publication number
WO2011118444A1
WO2011118444A1 PCT/JP2011/056021 JP2011056021W WO2011118444A1 WO 2011118444 A1 WO2011118444 A1 WO 2011118444A1 JP 2011056021 W JP2011056021 W JP 2011056021W WO 2011118444 A1 WO2011118444 A1 WO 2011118444A1
Authority
WO
WIPO (PCT)
Prior art keywords
driver
semiconductor element
heat
electronic control
generating semiconductor
Prior art date
Application number
PCT/JP2011/056021
Other languages
French (fr)
Japanese (ja)
Inventor
阿相竜治
Original Assignee
株式会社ケーヒン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ケーヒン filed Critical 株式会社ケーヒン
Priority to CN201180011625.2A priority Critical patent/CN102782844B/en
Publication of WO2011118444A1 publication Critical patent/WO2011118444A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06506—Wire or wire-like electrical connections between devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components

Definitions

  • the present invention relates to an electronic control device, and more particularly, to an electronic control device including a small heat generating semiconductor element that generates a relatively small amount of heat during operation and a large heat generating semiconductor element that generates a relatively large amount of heat during operation.
  • ECU Electronic Control Units
  • ICs integrated circuits
  • semiconductor elements have been mounted.
  • such an electronic control device is required to reduce its size while maintaining its function, so that a large number of semiconductor elements mounted on a substrate have a higher mounting density. It is in the present condition that it is required to be arranged.
  • Patent Document 1 discloses a one-chip IC overheat protection device.
  • the driver IC 20 (one-chip IC) includes a plurality of external load driving units 23 or communication control units 24 that exchange various signals with the external load 40 or the external module 50, and the external load driving unit 23.
  • Main power supply 22 power supply means for supplying power of a size necessary for the operation of the external load drive unit 23 and the like when the temperature reaches the temperature Tsub1 or the like (first protection temperature)
  • the temperature of the entire chip of the one-chip IC has an overheat protection function unit 23a or the like (function control side overheat protection means) that stops the functions of the external load drive unit 23, etc., and maintains the operating rate of the entire system. It is intended to prevent the rise.
  • the external load driving unit 23 of the driver IC 20 is provided with the overheat protection function unit 23a and the temperature of the external load driving unit 23 is the temperature Tsub1. It is considered that the configuration tends to become complicated because it is necessary to adopt a configuration that stops the functions of the external load driving unit 23 and the like when the temperature reaches the first (first protection temperature).
  • the driver IC that may overheat propagates to another driver IC. It is necessary to provide an additional absorbing object or shielding object that absorbs heat to be shielded or shields other driver ICs, and it is considered that the configuration tends to be complicated anyway.
  • An object of the present invention is to provide an electronic control device capable of reducing the influence of heat of a semiconductor element such as a driver IC.
  • an electronic control device including n (n is a natural number of 3 or more) semiconductor elements, each of which is integrated in a housing and generates heat during operation.
  • the n semiconductor elements include at least one first small heat generating semiconductor element that generates a relatively small amount of heat during operation, and the heat generation amount of the first small heat generating semiconductor element during operation.
  • a first large heat-generating semiconductor element that is relatively larger than the amount, and a second large heat-generating semiconductor element that has a heat amount during operation that is relatively larger than the heat amount of the first small heat-generating semiconductor element.
  • the first small heat generating semiconductor element, the first large heat generating semiconductor element and the second large heat generating semiconductor element are mounted on the same surface on a single substrate, and the first large heat generating semiconductor element is mounted Between the heat generating semiconductor element and the second large heat generating semiconductor element The heat radiation area, an electronic control unit and at least partially disposed in the housing of the first small heat-generating semiconductor device.
  • the present invention provides that the first large heat generating semiconductor element and the second large heat generating semiconductor element have a relatively large heat generation amount due to their internal electric circuit. It is a second aspect that each has a large heat generating terminal, and that the large heat generating terminals do not face each other in the relationship between the first large heat generating semiconductor element and the second large heat generating semiconductor element.
  • the present invention provides a driver device in which the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element are modularized.
  • the third aspect is that the driver device and the electronic control device that controls the operation of the driver device are arranged in the same package.
  • the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element are on the same surface side on a single substrate.
  • the semiconductor element is placed on the substrate while preventing the temperature during operation of the semiconductor element constituting the electronic control device from unnecessarily rising with a unified guideline. Can be implemented.
  • the semiconductor element is formed on the substrate so that the large heat generating terminals do not face each other. Therefore, it is possible to more reliably prevent the temperature during operation of the semiconductor elements constituting the electronic control device from being unnecessarily increased.
  • the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element constitute a modularized driver device.
  • the driver device and the electronic control device that controls the operation of the driver device are disposed in the same package, so that the temperature during operation of the semiconductor elements constituting the driver device can be reliably prevented from rising unnecessarily.
  • the overall configuration can be made compact.
  • FIG. 1 is a block diagram showing a connection configuration of an electronic control device according to the present embodiment.
  • FIG. 2A is a top view illustrating a configuration of a small heat generating driver IC in the electronic control device according to the present embodiment.
  • FIG. 2B is a top view showing the configuration of the first large heat generating driver IC in the electronic control device according to the present embodiment.
  • FIG. 2C is a top view showing a configuration of a second large heat generating driver IC in the electronic control device according to the present embodiment.
  • the electronic control unit 1 is a microcomputer.
  • the electronic control device 1 is connected to the driving target electrical components 3 to 8 correspondingly, and each of the driving target electrical components 3 to 8 is driven under the control of the electronic control device 1 to perform a predetermined operation. do.
  • the electronic control device 1 includes an arithmetic processing element (not shown) and a necessary memory element.
  • the number and types of the drive target electrical components 3 to 8 are not limited, but the drive target electrical component 3 is used for supplying power to supply power to the starter for starting the internal combustion engine of the vehicle.
  • the relay the drive target electrical component 4 is a power supply relay for supplying power to a high-power accessory of the vehicle, and the drive target electrical component 5 is a drive relay for driving a light emitting diode of a vehicle indicator, the drive target
  • the electrical component 6 is a drive relay for driving a solenoid for idle control of an internal combustion engine of a vehicle
  • the drive target electrical component 7 is a drive relay for driving a solenoid for adjusting a gas pressure of a fuel tank of the vehicle.
  • the drive target electrical component 8 is a drive relay for driving a solenoid for adjusting the pressure of lubricating oil in an internal combustion engine of a vehicle.
  • the number of electronic control devices 1 is not limited, but each driver IC 10, 20, 30 is incorporated as a semiconductor element that is formed into one chip and generates heat during operation.
  • the driver IC 10 seals an internal electric circuit with a sealing housing that is typically made of resin and has a rectangular parallelepiped shape, and is electrically connected to the internal electric circuit.
  • the terminals 11 to 18 extend outside the sealed housing.
  • the number of terminals 11 to 18 is not limited.
  • the terminal 14 is electrically connected to a driving relay 5 for driving a light emitting diode of a vehicle indicator. It is electrically connected to a drive relay 6 for driving a solenoid for idle control of an internal combustion engine of the vehicle.
  • the driver IC 20 seals the internal electric circuit with a sealing housing that is typically made of resin and has a rectangular parallelepiped shape, and terminals 21 to 28 electrically connected to the internal electric circuit. Is extended to the outside of the sealed casing.
  • the number of terminals 21 to 28 is not limited.
  • the terminal 21 is electrically connected to a power supply relay 3 for supplying power to a starter for starting an internal combustion engine of a vehicle.
  • the terminal 25 is electrically connected to the power supply relay 4 for supplying power to the high power accessory of the vehicle.
  • the driver IC 30 seals the internal electric circuit with a sealing housing that is typically made of resin and has a rectangular parallelepiped shape, and terminals 31 to 38 electrically connected to the internal electric circuit. Is extended to the outside of the sealed casing.
  • the number of terminals 31 to 38 is not limited.
  • the terminal 31 is electrically connected to a drive relay 7 for driving a solenoid for adjusting a gas pressure of a fuel tank of a vehicle.
  • the terminal 38 is electrically connected to a driving relay 8 for driving a solenoid for adjusting the pressure of lubricating oil in the internal combustion engine of the vehicle.
  • FIG. 3A is a top view showing a configuration in which each driver IC in the electronic control device according to the present embodiment is mounted on a substrate.
  • FIG. 3B is a side view showing a configuration in which each driver IC in the electronic control device according to the present embodiment is mounted on a substrate, and corresponds to a view taken along arrow A in FIG. 3A.
  • the x-axis, y-axis, and z-axis form a three-axis orthogonal coordinate system, and the direction of the z-axis is the vertical direction.
  • each of the driver ICs 10, 20, and 30 typically has peripheral electrical components or the like not shown on a substrate SB that is a glass epoxy substrate on which printed wiring is arranged. Implemented while avoiding where appropriate.
  • the electrical components 3 to 8 to be driven are connected to the electronic control unit 1, and the driver ICs 10, 20, and 30 are respectively operated for a predetermined time to measure the temperature of the sealing housing at a plurality of locations and take an average.
  • the temperature of the sealing housing of the driver IC 10 is the lowest, the temperature of the sealing housing of the driver IC 20 is the highest, and the temperature of the sealing housing of the driver IC 30 is higher than that of the driver IC 10.
  • the temperature was intermediate between those of the driver IC 20.
  • the temperature of the terminal 14 of the driver IC 10 was the lowest.
  • the temperature of the terminal 21 of the driver IC 20 is the highest, and the temperature of the terminal 14 of the driver IC 10, the terminal 25 of the driver IC 20, and the terminal 31 and the terminal 38 of the driver IC 30 are determined by the temperature of the terminal 14 of the driver IC 10. Although the temperature is high, the temperature is intermediate between them, which is lower than the temperature of the terminal 21 of the driver IC 20.
  • Such a phenomenon has occurred because the terminal 14 of the driver IC 10 is electrically connected to the driving relay 5 for driving the light emitting diode of the indicator with a small load.
  • the terminal 21 of the driver IC 20 is connected to a power supply relay 3 for supplying power to a starter having a large load. Since they are electrically connected, the power value consumed by the corresponding internal electric circuit is the largest and the amount of heat generation is relatively largest, while the remaining heat-generating terminals 18, 25, 31. , 38 are electrically connected to an intermediate load with respect to them, the power value consumed by the corresponding internal electric circuit takes a relatively intermediate value, and the amount of generated heat It believed to be due to taking a relatively intermediate values.
  • the driver IC 10 having the internal electric circuit with the lowest power consumption and the internal electric circuit with the medium power consumption has the smallest amount of heat generated during operation, and the temperature of the sealed casing is the lowest, and the power consumption is the lowest.
  • a driver IC 20 having a large internal electric circuit and an internal electric circuit with medium power consumption has the largest amount of heat generation, the highest temperature of the sealed casing, and an internal electric circuit with medium power consumption. Since the amount of heat generated during the operation of the two driver ICs 30 is intermediate, it can be concluded that the temperature of the sealed casing has reached an intermediate temperature.
  • the driver IC 10 is called a small heat generating driver IC
  • the driver ICs 20 and 30 are large in operation because the temperature of their sealed casing is higher than the temperature of the sealed casing of the driver IC 10. It can be called a heat-generating driver IC.
  • the driver ICs 20 and 30 are arranged so as to sandwich the driver IC 10 on the substrate SB.
  • the position of the driver IC 10 shown is moved upward or downward and placed at the position of the driver IC 10 ′ indicated by the two-dot chain line or the position of the driver IC 10 ′′, the position is compared with that at the position of the driver IC 10 indicated by the solid line.
  • the temperature of the sealed housing of each of the driver ICs 20 and 30 rises, and when the position of the driver IC 10 is moved upward or downward toward the end of the substrate SB, the driver ICs 20 and 30 The temperature of each sealed casing increased further.
  • This phenomenon occurs because the thermal radiation of one of the driver ICs 20, 30 that generates heat during operation propagates to the other more greatly in response to the movement of the position of the driver IC 10 relative to the driver ICs 20, 30. This is considered to be because the temperature of the sealed housing of each of the driver ICs 20 and 30 has increased.
  • the heat radiation from the driver IC 20 toward the driver IC 30 is mainly emitted from the vertical walls 20A and 20B facing the driver IC 30 among the vertical side walls perpendicular to the upper surface of the substrate SB in the sealing housing of the driver IC 20. Since the vertical walls 30A and 30B facing the driver IC 20 among the vertical side walls perpendicular to the upper surface of the substrate SB in the sealing housing of the driver IC 30 are received, the radiation area of the heat radiation from the driver IC 20 toward the driver IC 30 is As shown in FIG. 3A, the region H is defined by the contour edges of the vertical walls 20A and 20B of the driver IC 20 and the contour edges of the vertical walls 30A and 30B of the driver IC 30. Further, a radiation region of heat radiation from the driver IC 30 toward the driver IC 20 is defined in the same manner, and can be evaluated as matching with the region H shown in FIG. 3A.
  • the thermal radiation of one of the driver ICs 20 and 30 that generate heat during operation propagates to the other through the thermal radiation region H between the driver ICs 20 and 30, and the respective sealed housings of the driver ICs 20 and 30. It is thought that the temperature increases.
  • the driver ICs 20 and 30 receive the heat generated by each other as they are, so that the temperature of each sealed casing is the original temperature.
  • an absorbing object that absorbs propagating heat is arranged in the heat radiation region H, part of the heat generated by the driver ICs 20 and 30 is absorbed, and the driver ICs 20 and 30 Are considered to receive an amount of heat obtained by subtracting the heat absorbed by the absorbing object from the heat generated by each other.
  • the temperature of the sealed casing of the driver IC 10 during operation is lower than the temperature of the respective sealed casings of the driver ICs 20 and 30 during operation. Therefore, when the driver IC 10 is disposed in the heat radiation region H, the sealed housing mainly functions as an absorbing object that absorbs the heat generated by the driver ICs 20 and 30, and as a result, the driver ICs 20 and 30 It can be seen that the amount of heat received can decrease and the temperature of the sealed housing of each of the driver ICs 20 and 30 can decrease.
  • the sealing housing of the driver IC 10 is between the sealing housings of the driver ICs 20 and 30 and substantially the entire heat radiation region H. Therefore, it is possible to absorb a larger amount of heat propagating through the driver IC 20, compared to the case where the driver IC 10 ′ and the position of the driver IC 10 ′′ indicated by a two-dot chain line are placed. It can be understood that the temperature of each of the 30 sealed casings is further lowered.
  • the sealing housing of the driver IC 10 is arranged so as to block at least a part of the heat radiation area H, such as the position of the driver IC 10 ′ indicated by a two-dot chain line in 3A and the position of the driver IC 10 ′′,
  • the temperature of the sealed housing of each of the driver ICs 20 and 30 can be lowered as compared with the case where no driver IC 10 is disposed in the heat radiation region H. Further, the temperature during the operation is low.
  • the shape of the sealing housing of the relatively low heat-generating driver IC 10 is a rectangular parallelepiped in terms of the convenience of blocking the heat radiation region H reliably and efficiently. It can be said that Masui.
  • the driver IC 10 having a low temperature of the sealing casing during operation is disposed so as to block the substantial entire area of the heat radiation region H between the sealing casings of the driver ICs 20 and 30 as described above.
  • the driver IC 20 there are terminals 21 and 25 having a relatively high temperature.
  • terminals 31 and 38 having a relatively high temperature exist, and the terminals 21, 25, 31, and 38 are Can be a heat source.
  • terminals 21, 25, 31, 38 are arranged so as not to face the corresponding driver ICs 20, 30, it is possible to avoid the amount of heat generated from these being superimposed on the heat radiation region H, and The amount of heat propagating through the radiation region H can be reduced.
  • 3A only the terminal 21 of the driver IC 20 is arranged so as not to directly face the driver IC 30, and the terminal 25 of the driver IC 20 and the terminals 31 and 38 of the driver IC 30 are interposed between the sealing housings of the driver IC 10.
  • the terminals 25, 31, and 38 may be arranged so as to intervene so that they do not directly face the corresponding driver ICs 20 and 30.
  • the mounting guidelines for the small heat generating driver IC 10 in which the temperature of the sealing casing during operation as described above is relatively low and the large heat generating driver ICs 20 and 30 in which the temperature of the sealing casing during operation is relatively high are as follows: Since the present invention is applicable even when the number of driver ICs is further increased, the case where the number of driver ICs is further increased will be described in detail with reference to FIGS. 4A and 4B.
  • FIG. 4A is a top view showing a state of thermal radiation between corresponding driver ICs when two large heat generating driver ICs are arranged on one side of one large heat generating driver IC in the electronic control device according to the present embodiment. It is.
  • FIG. 4B is a top view showing a state of thermal radiation between corresponding driver ICs when one large heat generating driver IC is arranged on both sides of one large heat generating driver IC in the electronic control device according to the present embodiment.
  • FIG. In the figure, the x-axis and the y-axis are two axes in a three-axis orthogonal coordinate system including the x-axis, the y-axis, and the z-axis with the z-axis direction as the vertical direction.
  • the large heat generating driver IC 40 in which the temperature of the sealed casing during operation is relatively high is larger than the large heat generating driver IC 20 in which the temperature of the sealing casing during operation is relatively high.
  • the temperature of the sealed casing during operation is disposed on the same side as the relatively large heat generating driver IC 30, in addition to the heat radiation area H defined between the driver ICs 20, 30, the same In view of this, a heat radiation region H1 is defined between the driver ICs 20 and 40, and a heat radiation region H2 is defined between the driver ICs 30 and 40.
  • the sealing case of the small heat-generating driver IC in which the temperature of the sealing case at the time of operation such as the driver IC 10 is relatively low so as to overlap each of the heat radiation regions H, H1, and H2. If one or more are disposed, the heat radiation areas H, H1, and H2 can be shielded, and the amount of heat that propagates between the driver ICs 20 and 30 and between the driver ICs 20 and 40 can be absorbed, and the driver during operation The temperature of each sealed casing of the IC 20, 30, 40 can be lowered. When the size of the sealing housing of the small heat generating driver IC is relatively low during operation, the heat radiation regions H3, H4 where the heat radiation regions H, H1, H2 overlap each other. If a plurality of H5 are disposed in a distributed manner, the amount of heat that propagates effectively can be reduced.
  • the large heat generating driver IC 50 in which the temperature of the sealed casing during operation is relatively high is changed to the large heat generating driver IC 20 in which the temperature of the sealing casing during operation is relatively high.
  • the large heat generating driver IC 30 in addition to the heat radiation region H defined between the driver ICs 20 and 30, in addition to the heat radiation region H defined between the driver ICs 20 and 30, In the same way, a heat radiation region H6 is defined between the driver ICs 20 and 50. Since the distance between the driver ICs 30 and 60 is relatively large, the thermal radiation between them does not cause a substantial problem.
  • a plurality of sealing housings for the small heat-generating driver IC such as the driver IC 10 in which the temperature of the sealing housing during operation is relatively low so as to overlap each of the heat radiation regions H and H 6. If arranged, the heat radiation areas H and H6 can be blocked, the amount of heat propagating between the driver ICs 20 and 30 and between the driver ICs 20 and 50 can be absorbed, and each of the driver ICs 20, 30 and 50 during operation can be absorbed. The temperature of the sealed casing can be lowered.
  • the driver ICs 10, 20, 30 and the like can be established independently as a driver device different from the electronic control device. Therefore, this configuration is further modified as a modification example in FIGS. Hereinafter, it will be described in detail with reference to FIG.
  • FIG. 5 is a block diagram illustrating a connection configuration of an electronic control device according to a modification of the present embodiment.
  • FIG. 6 is a cross-sectional view showing a configuration in which the electronic control device and the driver device in the present modification are arranged and stacked in the same package.
  • the configuration in this modification is mainly different from the above configuration in that the driver ICs 10, 20, 30 and the like are independent from the electronic control device as the driver device, and the remaining configuration is the same. is there. Therefore, in this modification, the description will be made paying attention to such a difference, and the same components are denoted by the same reference numerals, and the description will be simplified or omitted as appropriate.
  • the driver device 60 includes driver ICs 10, 20, and 30 and is modularized separately from the electronic control device 70.
  • a package PK is, for example, a resin sealing body, and is molded by a transfer molding method or the like.
  • the driver device 60 is connected to the electronic control device 70, which is a microcomputer, and each of the driving target electrical components 3 to 8, and operates under the control of the electronic control device 70. 8 are each driven.
  • the heat radiation region H is blocked so as to block the substantial entire region of the heat radiation region H between the respective sealing housings of the driver ICs 20 and 30. If the driver IC 10 having a low temperature of the sealed casing during operation is arranged, the temperature of the sealed casing of each of the driver ICs 20 and 30 during operation can be kept lower, and the driver device 60 and the electronic control are controlled.
  • the device 70 can be accommodated in a package PK such as the same housing so that the overall configuration of the driver device 60 and the electronic control device 70 can be made compact.
  • the driver IC is described as an example of the semiconductor element that generates heat during operation.
  • the mounting guidelines of the present embodiment can be applied to other semiconductor elements that generate heat during operation. It is.
  • the sealing housing of the large heat generating driver IC having a relatively high temperature during operation has been described as a rectangular parallelepiped shape. However, if the equivalent function can be exhibited, the volume tends to increase, but the circle tends to increase. Other sealed casings such as a columnar shape may be applied.
  • the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element are mounted on the same surface side on the single substrate, and the first By disposing at least a part of the casing of the first small heat generating semiconductor element in the heat radiation region between the large heat generating semiconductor element and the second large heat generating semiconductor element, the number of components is not increased.
  • the semiconductor element can be mounted on the substrate while preventing the temperature during operation of the semiconductor element constituting the electronic control device from being unnecessarily increased with a unified guideline.
  • the electronic control device is configured. It can prevent more reliably that the temperature at the time of operation
  • the first small heat-generating semiconductor element sealing casing has a rectangular parallelepiped shape, the heat radiation area between the semiconductor elements can be reliably blocked with a simple configuration, and the amount of heat can be absorbed. It is possible to more reliably prevent the temperature at the time of operation of the semiconductor element constituting the element from rising unnecessarily.
  • the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element constitute a modularized driver device, and the driver device and an electronic control device for controlling the operation of the driver device, Are disposed in the same package, the entire configuration can be made compact while reliably suppressing an undesired increase in temperature during operation of the semiconductor elements constituting the driver device.
  • the type, arrangement, number, and the like of the members are not limited to the above-described embodiments, and the components depart from the gist of the invention, such as appropriately replacing the constituent elements with those having the same operational effects. Of course, it can be appropriately changed within the range not to be.
  • the configuration of a semiconductor element such as a special driver IC or the like, or the configuration of a driver IC that generates heat during operation or the like without adopting a configuration that adds a special absorbing object or the like is adopted.
  • An electronic control device capable of reducing the influence of heat of the semiconductor element can be provided, and it is expected that the electronic control device can be widely applied to a drive device for an electrical component such as a vehicle because of its general-purpose universal character.

Abstract

Disclosed is an electronic control device wherein a first small heat-producing semiconductor element (10), a first large heat-producing semiconductor element (20), and a second large heat-producing semiconductor element (30) are provided coplanar on the surface of a uniform substrate (SB). Further, at least one part of a housing of the small heat-producing semiconductor element is disposed inside the mutual thermal radiation area (H) of the first large heat-producing semiconductor element and the second large heat-producing semiconductor element.

Description

電子制御装置Electronic control unit
　本発明は、電子制御装置に関し、特に、動作時の発熱量が相対的に小さい小発熱半導体素子と、動作時の発熱量が相対的に大きい大発熱半導体素子と、を備える電子制御装置に関する。 The present invention relates to an electronic control device, and more particularly, to an electronic control device including a small heat generating semiconductor element that generates a relatively small amount of heat during operation and a large heat generating semiconductor element that generates a relatively large amount of heat during operation.
　近年、自動車等の車両に搭載される種々の電子制御装置（ＥＣＵ：Ｅｌｅｃｔｒｏｎｉｃ　Ｃｏｎｔｒｏｌ　Ｕｎｉｔ）には、要求される機能の高度化に伴い、基板上に１チップ化されたＩＣ（Ｉｎｔｅｇｒａｔｅｄ　Ｃｉｒｃｕｉｔ）である半導体素子が多数実装されるようになってきている。また、同時に、かかる電子制御装置には、その機能を維持したまま、そのサイズをより小型化することが求められているため、基板上に多数実装される半導体素子は、より実装密度を上げて配設されることが求められる現状にある。 In recent years, various electronic control units (ECU: Electronic Control Units) mounted on vehicles such as automobiles are integrated circuits (ICs) that are integrated into a single chip on a substrate as the required functions become more sophisticated. Many semiconductor elements have been mounted. At the same time, such an electronic control device is required to reduce its size while maintaining its function, so that a large number of semiconductor elements mounted on a substrate have a higher mounting density. It is in the present condition that it is required to be arranged.
　このように、電子制御装置内に、多数の半導体素子をそれらの実装密度を上げて配設した場合には、半導体素子の動作時に電子制御装置内の温度が上昇して、半導体素子の機能等に影響が出ることも考えられるので、温度が上昇した半導体素子の動作を停止する構成を採用することも提案されてきている。 As described above, when a large number of semiconductor elements are arranged in the electronic control device with their mounting density increased, the temperature in the electronic control device rises during the operation of the semiconductor elements, and the functions of the semiconductor elements, etc. Therefore, it has been proposed to adopt a configuration in which the operation of the semiconductor element whose temperature has risen is stopped.
　特許文献１は、１チップＩＣの過熱保護装置を開示する。具体的には、ドライバＩＣ２０（１チップＩＣ）は、外部負荷４０または外部モジュール５０との間で各種信号のやり取りを行う複数の外部負荷駆動部２３または通信制御部２４と、外部負荷駆動部２３等の作動に必要な大きさの電源を供給するメイン電源２２（電源供給手段）と、を備え、外部負荷駆動部２３等は、その温度が温度Ｔｓｕｂ１等（第１保護温度）に達したとき、その外部負荷駆動部２３等の機能を停止する過熱保護機能部２３ａ等（機能制御側過熱保護手段）を有して、システム全体の稼動率を維持しながら、１チップＩＣのチップ全体の温度上昇を防ぐことが企図されている。 Patent Document 1 discloses a one-chip IC overheat protection device. Specifically, the driver IC 20 (one-chip IC) includes a plurality of external load driving units 23 or communication control units 24 that exchange various signals with the external load 40 or the external module 50, and the external load driving unit 23. Main power supply 22 (power supply means) for supplying power of a size necessary for the operation of the external load drive unit 23 and the like when the temperature reaches the temperature Tsub1 or the like (first protection temperature) The temperature of the entire chip of the one-chip IC has an overheat protection function unit 23a or the like (function control side overheat protection means) that stops the functions of the external load drive unit 23, etc., and maintains the operating rate of the entire system. It is intended to prevent the rise.
特開２００９－１７１２１６号公報JP 2009-171216 A
　しかしながら、本発明者の検討によれば、かかる特許文献１の構成では、ドライバＩＣ２０の外部負荷駆動部２３等に過熱保護機能部２３ａ等を設けて、外部負荷駆動部２３等の温度が温度Ｔｓｕｂ１等（第１保護温度）に達したとき、その外部負荷駆動部２３等の機能を停止する構成を採用する必要があるため、その構成が煩雑になる傾向があると考えられる。 However, according to the examination of the present inventor, in the configuration of Patent Document 1, the external load driving unit 23 of the driver IC 20 is provided with the overheat protection function unit 23a and the temperature of the external load driving unit 23 is the temperature Tsub1. It is considered that the configuration tends to become complicated because it is necessary to adopt a configuration that stops the functions of the external load driving unit 23 and the like when the temperature reaches the first (first protection temperature).
　また、本発明者の検討によれば、このように過熱保護機能部２３ａ等を設けない一般的なドライバＩＣを採用したとすれば、過熱する可能性のあるドライバＩＣから他のドライバＩＣに伝搬する熱を吸収したり他のドライバＩＣを遮蔽したりするような付加的な吸収物体や遮蔽物体を設ける必要があり、いずれにせよその構成が煩雑になる傾向があるとも考えられる。 Further, according to the study of the present inventor, if a general driver IC that does not include the overheat protection function unit 23a or the like is employed, the driver IC that may overheat propagates to another driver IC. It is necessary to provide an additional absorbing object or shielding object that absorbs heat to be shielded or shields other driver ICs, and it is considered that the configuration tends to be complicated anyway.
　つまり、特殊なドライバＩＣ等の半導体素子の構成を採用したり、特殊な吸収物体等を付加する構成を採用することなく、動作時等に発熱するドライバＩＣ等の半導体素子の熱の影響を低減するための新規な構成を有する電子制御装置が要請された状況にある。 In other words, the influence of the heat of the semiconductor elements such as the driver IC that generates heat during operation is reduced without adopting the structure of the semiconductor elements such as a special driver IC or adding a special absorbing object. There is a demand for an electronic control device having a new configuration for this purpose.
　本発明は、以上の検討を経てなされたものであり、特殊なドライバＩＣ等の半導体素子の構成を採用したり、特殊な吸収物体等を付加する構成を採用することなく、動作時等に発熱するドライバＩＣ等の半導体素子の熱の影響を低減することのできる電子制御装置を提供することを目的とする。 The present invention has been made through the above-described studies, and generates heat during operation or the like without adopting a configuration of a semiconductor element such as a special driver IC or a configuration adding a special absorbing object or the like. An object of the present invention is to provide an electronic control device capable of reducing the influence of heat of a semiconductor element such as a driver IC.
　以上の目的を達成するべく、本発明は、第１の局面において、各々が筐体内で集積回路化され動作時に発熱するｎ（ｎは３以上の自然数）個の半導体素子を備える電子制御装置であって、前記ｎ個の半導体素子は、動作時の発熱量が相対的に小さい少なくとも１つの第１の小発熱半導体素子と、動作時の発熱量が前記第１の小発熱半導体素子の前記発熱量よりも相対的に大きい第１の大発熱半導体素子と、動作時の発熱量が前記第１の小発熱半導体素子の前記発熱量よりも相対的に大きい第２の大発熱半導体素子と、を含み、　前記第１の小発熱半導体素子、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子が、単一の基板上の同一面側に実装され、かつ、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子相互間の熱輻射領域内に、前記第１の小発熱半導体素子の筐体の少なくとも一部が配置されていることを特徴とする電子制御装置である。 In order to achieve the above object, according to the first aspect of the present invention, there is provided an electronic control device including n (n is a natural number of 3 or more) semiconductor elements, each of which is integrated in a housing and generates heat during operation. The n semiconductor elements include at least one first small heat generating semiconductor element that generates a relatively small amount of heat during operation, and the heat generation amount of the first small heat generating semiconductor element during operation. A first large heat-generating semiconductor element that is relatively larger than the amount, and a second large heat-generating semiconductor element that has a heat amount during operation that is relatively larger than the heat amount of the first small heat-generating semiconductor element. The first small heat generating semiconductor element, the first large heat generating semiconductor element and the second large heat generating semiconductor element are mounted on the same surface on a single substrate, and the first large heat generating semiconductor element is mounted Between the heat generating semiconductor element and the second large heat generating semiconductor element The heat radiation area, an electronic control unit and at least partially disposed in the housing of the first small heat-generating semiconductor device.
　また本発明は、かかる第１の局面に加えて、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子は、それらの内部電気回路に起因して、発熱量が相対的に大きい大発熱端子をそれぞれ有し、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子との関係において、前記大発熱端子同士は対面しないことを第２の局面とする。 In addition to the first aspect, the present invention provides that the first large heat generating semiconductor element and the second large heat generating semiconductor element have a relatively large heat generation amount due to their internal electric circuit. It is a second aspect that each has a large heat generating terminal, and that the large heat generating terminals do not face each other in the relationship between the first large heat generating semiconductor element and the second large heat generating semiconductor element.
　また本発明は、かかる第１又は第２の局面に加えて、前記第１の小発熱半導体素子、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子はモジュール化されたドライバ装置を構成し、前記ドライバ装置と前記ドライバ装置の動作を制御する前記電子制御装置と、が同一のパッケージ内に配置されていることを第３の局面とする。 In addition to the first or second aspect, the present invention provides a driver device in which the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element are modularized. The third aspect is that the driver device and the electronic control device that controls the operation of the driver device are arranged in the same package.
　本発明の第１の局面の電子制御装置によれば、第１の小発熱半導体素子、第１の大発熱半導体素子及び第２の大発熱半導体素子が、単一の基板上の同一面側に実装され、かつ、第１の大発熱半導体素子及び第２の大発熱半導体素子相互間の熱輻射領域内に、第１の小発熱半導体素子の筐体の少なくとも一部が配置されていることにより、部品点数を増加させることなく簡便な構成により、統一的な指針でもって、電子制御装置を構成する半導体素子の動作時の温度が不要に上昇することを防止しながら、基板上に半導体素子を実装することができる。 According to the electronic control device of the first aspect of the present invention, the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element are on the same surface side on a single substrate. By being mounted and at least a part of the casing of the first small heat generating semiconductor element is disposed in the heat radiation region between the first large heat generating semiconductor element and the second large heat generating semiconductor element. With a simple configuration without increasing the number of parts, the semiconductor element is placed on the substrate while preventing the temperature during operation of the semiconductor element constituting the electronic control device from unnecessarily rising with a unified guideline. Can be implemented.
　本発明の第２の局面の電子制御装置によれば、第１の大発熱半導体素子及び第２の大発熱半導体素子との関係において、大発熱端子同士が対面しないように、基板上に半導体素子が実装されているため、電子制御装置を構成する半導体素子の動作時の温度が不要に上昇することをより確実に防止することができる。 According to the electronic control device of the second aspect of the present invention, in the relationship between the first large heat generating semiconductor element and the second large heat generating semiconductor element, the semiconductor element is formed on the substrate so that the large heat generating terminals do not face each other. Therefore, it is possible to more reliably prevent the temperature during operation of the semiconductor elements constituting the electronic control device from being unnecessarily increased.
　本発明の第３の局面の電子制御装置によれば、第１の小発熱半導体素子、第１の大発熱半導体素子及び第２の大発熱半導体素子はモジュール化されたドライバ装置を構成し、かかるドライバ装置とその動作を制御する電子制御装置と、が同一のパッケージ内に配置されていることにより、ドライバ装置を構成する半導体素子の動作時の温度が不要に上昇することを確実に抑制しながら、その全体構成をコンパクト化することができる。 According to the electronic control device of the third aspect of the present invention, the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element constitute a modularized driver device. The driver device and the electronic control device that controls the operation of the driver device are disposed in the same package, so that the temperature during operation of the semiconductor elements constituting the driver device can be reliably prevented from rising unnecessarily. The overall configuration can be made compact.
本発明の実施形態における電子制御装置の接続構成を示すブロック図である。It is a block diagram which shows the connection structure of the electronic control apparatus in embodiment of this invention. 本実施形態における電子制御装置内の小発熱ドライバＩＣの構成を示す上面図である。It is a top view which shows the structure of the small heat generation driver IC in the electronic controller in this embodiment. 本実施形態における電子制御装置内の第１の大発熱ドライバＩＣの構成を示す上面図である。It is a top view which shows the structure of the 1st large heat generation driver IC in the electronic controller in this embodiment. 本実施形態における電子制御装置内の第２の大発熱ドライバＩＣの構成を示す上面図である。It is a top view which shows the structure of the 2nd large heat generation driver IC in the electronic controller in this embodiment. 本実施形態における電子制御装置内の各ドライバＩＣが基板上に実装された構成を示す上面図である。It is a top view which shows the structure by which each driver IC in the electronic control apparatus in this embodiment was mounted on the board | substrate. 本実施形態における電子制御装置内の各ドライバＩＣが基板上に実装された構成を示す側面図であり、図３ＡのＡ矢視図に相当する。It is a side view which shows the structure by which each driver IC in the electronic control apparatus in this embodiment was mounted on the board | substrate, and corresponds to the A arrow view of FIG. 3A. 本実施形態における電子制御装置内で１つの大発熱ドライバＩＣの一方の側に２つの大発熱ドライバＩＣが配置された場合の対応するドライバＩＣ間の熱輻射の状態を示す上面図である。It is a top view which shows the state of the thermal radiation between corresponding driver ICs when two large heat generating driver ICs are arrange | positioned in the one side of one large heat generating driver IC in the electronic controller in this embodiment. 本実施形態における電子制御装置内で１つの大発熱ドライバＩＣの両側に各１つの大発熱ドライバＩＣが配置された場合の対応するドライバＩＣ間の熱輻射の状態を示す上面図である。It is a top view which shows the state of the thermal radiation between corresponding driver ICs when one large heat generating driver IC is arrange | positioned on both sides of one large heat generating driver IC in the electronic controller in this embodiment. 本発明の実施形態における変形例の電子制御装置の接続構成を示すブロック図である。It is a block diagram which shows the connection structure of the electronic controller of the modification in embodiment of this invention. 本変形例における電子制御装置とドライバ装置とが同一パッケージ内に配置されて積層された構成を示す断面図である。It is sectional drawing which shows the structure by which the electronic controller and driver device in this modification were arrange | positioned and laminated | stacked in the same package.
　以下、図面を適宜参照して、本発明の実施形態における電子制御装置につき、詳細に説明する。 Hereinafter, an electronic control device according to an embodiment of the present invention will be described in detail with reference to the drawings as appropriate.
　まず、本実施形態における電子制御装置の構成について、図１、図２Ａ、図２Ｂ及び図２Ｃを参照して、詳細に説明する。 First, the configuration of the electronic control device according to the present embodiment will be described in detail with reference to FIGS. 1, 2A, 2B, and 2C.
　図１は、本実施形態における電子制御装置の接続構成を示すブロック図である。図２Ａは、本実施形態における電子制御装置内の小発熱ドライバＩＣの構成を示す上面図である。図２Ｂは、本実施形態における電子制御装置内の第１の大発熱ドライバＩＣの構成を示す上面図である。また、図２Ｃは、本実施形態における電子制御装置内の第２の大発熱ドライバＩＣの構成を示す上面図である。 FIG. 1 is a block diagram showing a connection configuration of an electronic control device according to the present embodiment. FIG. 2A is a top view illustrating a configuration of a small heat generating driver IC in the electronic control device according to the present embodiment. FIG. 2B is a top view showing the configuration of the first large heat generating driver IC in the electronic control device according to the present embodiment. FIG. 2C is a top view showing a configuration of a second large heat generating driver IC in the electronic control device according to the present embodiment.
　図１に示すように、電子制御装置１は、マイクロコンピュータである。かかる電子制御装置１には、駆動対象電気部品３～８がそれぞれ対応して接続されて、各駆動対象電気部品３～８は、電子制御装置１の制御の下で駆動されて、所定の動作をする。なお、電子制御装置１は、図示を省略する演算処理素子及び必要なメモリ素子を有する。 As shown in FIG. 1, the electronic control unit 1 is a microcomputer. The electronic control device 1 is connected to the driving target electrical components 3 to 8 correspondingly, and each of the driving target electrical components 3 to 8 is driven under the control of the electronic control device 1 to perform a predetermined operation. do. The electronic control device 1 includes an arithmetic processing element (not shown) and a necessary memory element.
　ここで、駆動対象電気部品３～８の個数及び種類は限定的なものではないが、駆動対象電気部品３は、車両の内燃機関を始動するためのスタータに電力を供給するための電力供給用リレー、駆動対象電気部品４は、車両の大電力アクセサリに電力を供給するための電力供給用リレー、駆動対象電気部品５は、車両のインジケータの発光ダイオードを駆動するための駆動用リレー、駆動対象電気部品６は、車両の内燃機関のアイドルコントロール用のソレノイドを駆動するための駆動用リレー、駆動対象電気部品７は、車両のフューエルタンクのガス圧調整用のソレノイドを駆動するための駆動用リレー、及び駆動対象電気部品８は、車両の内燃機関の潤滑オイルの圧力調整用のソレノイドを駆動するための駆動用リレーである。 Here, the number and types of the drive target electrical components 3 to 8 are not limited, but the drive target electrical component 3 is used for supplying power to supply power to the starter for starting the internal combustion engine of the vehicle. The relay, the drive target electrical component 4 is a power supply relay for supplying power to a high-power accessory of the vehicle, and the drive target electrical component 5 is a drive relay for driving a light emitting diode of a vehicle indicator, the drive target The electrical component 6 is a drive relay for driving a solenoid for idle control of an internal combustion engine of a vehicle, and the drive target electrical component 7 is a drive relay for driving a solenoid for adjusting a gas pressure of a fuel tank of the vehicle. The drive target electrical component 8 is a drive relay for driving a solenoid for adjusting the pressure of lubricating oil in an internal combustion engine of a vehicle.
　また、電子制御装置１は、個数は限定的なものではないが、それぞれが１チップ化されて動作時に発熱する半導体素子としてドライバＩＣ１０、２０、３０を内蔵する。 The number of electronic control devices 1 is not limited, but each driver IC 10, 20, 30 is incorporated as a semiconductor element that is formed into one chip and generates heat during operation.
　具体的には、ドライバＩＣ１０は、図２Ａに示すように、内部電気回路を典型的には樹脂製で直方体状の封止筐体で封止すると共に、かかる内部電気回路に電気的に接続された端子１１～１８を封止筐体の外部に延出する構成を有するものである。ここで、端子１１～１８の個数は限定的なものではないが、特に、端子１４は、車両のインジケータの発光ダイオードを駆動するための駆動用リレー５に電気的に接続され、端子１８は、車両の内燃機関のアイドルコントロール用のソレノイドを駆動するための駆動用リレー６に電気的に接続されている。 Specifically, as shown in FIG. 2A, the driver IC 10 seals an internal electric circuit with a sealing housing that is typically made of resin and has a rectangular parallelepiped shape, and is electrically connected to the internal electric circuit. The terminals 11 to 18 extend outside the sealed housing. Here, the number of terminals 11 to 18 is not limited. In particular, the terminal 14 is electrically connected to a driving relay 5 for driving a light emitting diode of a vehicle indicator. It is electrically connected to a drive relay 6 for driving a solenoid for idle control of an internal combustion engine of the vehicle.
　ドライバＩＣ２０は、図２Ｂに示すように、内部電気回路を典型的には樹脂製で直方体状の封止筐体で封止すると共に、かかる内部電気回路に電気的に接続された端子２１～２８を封止筐体の外部に延出する構成を有するものである。ここで、端子２１～２８の個数は限定的なものではないが、特に、端子２１は、車両の内燃機関を始動するためのスタータに電力を供給するための電力供給用リレー３に電気的に接続され、端子２５は、車両の大電力アクセサリに電力を供給するための電力供給用リレー４に電気的に接続されている。 As shown in FIG. 2B, the driver IC 20 seals the internal electric circuit with a sealing housing that is typically made of resin and has a rectangular parallelepiped shape, and terminals 21 to 28 electrically connected to the internal electric circuit. Is extended to the outside of the sealed casing. Here, the number of terminals 21 to 28 is not limited. In particular, the terminal 21 is electrically connected to a power supply relay 3 for supplying power to a starter for starting an internal combustion engine of a vehicle. The terminal 25 is electrically connected to the power supply relay 4 for supplying power to the high power accessory of the vehicle.
　ドライバＩＣ３０は、図２Ｃに示すように、内部電気回路を典型的には樹脂製で直方体状の封止筐体で封止すると共に、かかる内部電気回路に電気的に接続された端子３１～３８を封止筐体の外部に延出する構成を有するものである。ここで、端子３１～３８の個数は限定的なものではないが、特に、端子３１は、車両のフューエルタンクのガス圧調整用のソレノイドを駆動するための駆動用リレー７に電気的に接続され、端子３８は、車両の内燃機関の潤滑オイルの圧力調整用のソレノイドを駆動するための駆動用リレー８に電気的に接続されている。 As shown in FIG. 2C, the driver IC 30 seals the internal electric circuit with a sealing housing that is typically made of resin and has a rectangular parallelepiped shape, and terminals 31 to 38 electrically connected to the internal electric circuit. Is extended to the outside of the sealed casing. Here, the number of terminals 31 to 38 is not limited. In particular, the terminal 31 is electrically connected to a drive relay 7 for driving a solenoid for adjusting a gas pressure of a fuel tank of a vehicle. The terminal 38 is electrically connected to a driving relay 8 for driving a solenoid for adjusting the pressure of lubricating oil in the internal combustion engine of the vehicle.
　以上の構成において、更に図３Ａ及び図３Ｂをも参照して、電子制御装置１内のドライバＩＣ１０、２０、３０が、それぞれ作動状態にあるときの発熱状態について、詳細に説明する。 In the above configuration, the heat generation state when the driver ICs 10, 20, and 30 in the electronic control device 1 are in the operating state will be described in detail with reference to FIGS. 3A and 3B.
　図３Ａは、本実施形態における電子制御装置内の各ドライバＩＣが基板上に実装された構成を示す上面図である。また、図３Ｂは、本実施形態における電子制御装置内の各ドライバＩＣが基板上に実装された構成を示す側面図であり、図３ＡのＡ矢視図に相当する。なお、図中、ｘ軸、ｙ軸及びｚ軸は、３軸直交座標系を成し、ｚ軸の方向を上下方向とする。 FIG. 3A is a top view showing a configuration in which each driver IC in the electronic control device according to the present embodiment is mounted on a substrate. FIG. 3B is a side view showing a configuration in which each driver IC in the electronic control device according to the present embodiment is mounted on a substrate, and corresponds to a view taken along arrow A in FIG. 3A. In the figure, the x-axis, y-axis, and z-axis form a three-axis orthogonal coordinate system, and the direction of the z-axis is the vertical direction.
　図３Ａ及び図３Ｂに示すように、ドライバＩＣ１０、２０、３０はそれぞれ、典型的にはプリント配線が配策されたガラスエポキシ基板である基板ＳＢ上に、図示を省略する周辺の電気部品等を適宜避けながら、実装されている。 As shown in FIGS. 3A and 3B, each of the driver ICs 10, 20, and 30 typically has peripheral electrical components or the like not shown on a substrate SB that is a glass epoxy substrate on which printed wiring is arranged. Implemented while avoiding where appropriate.
　かかる構成で、電子制御装置１に駆動対象電気部品３～８を接続して、ドライバＩＣ１０、２０、３０をそれぞれ、所定時間作動して封止筐体の温度を複数箇所測定して平均をとったところ、ドライバＩＣ１０の封止筐体の温度が最も低く、ドライバＩＣ２０の封止筐体の温度が最も高く、かつ、ドライバＩＣ３０の封止筐体の温度は、ドライバＩＣ１０のものよりは高いがドライバＩＣ２０のものよりは低いようなそれらの中間の温度であった。 With such a configuration, the electrical components 3 to 8 to be driven are connected to the electronic control unit 1, and the driver ICs 10, 20, and 30 are respectively operated for a predetermined time to measure the temperature of the sealing housing at a plurality of locations and take an average. However, the temperature of the sealing housing of the driver IC 10 is the lowest, the temperature of the sealing housing of the driver IC 20 is the highest, and the temperature of the sealing housing of the driver IC 30 is higher than that of the driver IC 10. The temperature was intermediate between those of the driver IC 20.
　より詳しく検討すると、ドライバＩＣ１０の端子１４及び端子１８、ドライバＩＣ２０の端子２１及び端子２５、並びにドライバＩＣ３０の端子３１及び端子３８に発熱が見られたが、ドライバＩＣ１０の端子１４の温度が最も低く、ドライバＩＣ２０の端子２１の温度が最も高く、かつ、ドライバＩＣ１０の端子１４、ドライバＩＣ２０の端子２５、及びドライバＩＣ３０の端子３１及び端子３８のそれぞれの温度は、ドライバＩＣ１０の端子１４の温度のよりは高いが、ドライバＩＣ２０の端子２１の温度よりは低いようなそれらの中間の温度であった。 When examined in more detail, heat was observed at the terminals 14 and 18 of the driver IC 10, the terminals 21 and 25 of the driver IC 20, and the terminals 31 and 38 of the driver IC 30, but the temperature of the terminal 14 of the driver IC 10 was the lowest. The temperature of the terminal 21 of the driver IC 20 is the highest, and the temperature of the terminal 14 of the driver IC 10, the terminal 25 of the driver IC 20, and the terminal 31 and the terminal 38 of the driver IC 30 are determined by the temperature of the terminal 14 of the driver IC 10. Although the temperature is high, the temperature is intermediate between them, which is lower than the temperature of the terminal 21 of the driver IC 20.
　このような現象が生じたのは、ドライバＩＣ１０の端子１４は、負荷の小さなインジケータの発光ダイオードを駆動するための駆動用リレー５に電気的に接続されるものであるため、対応する内部電気回路で消費される電力値が最も小さく、発熱量が相対的に最も小さいものであるのに対して、ドライバＩＣ２０の端子２１は、負荷の大きなスタータに電力を供給するための電力供給用リレー３に電気的に接続されるものであるため、対応する内部電気回路で消費される電力値が最も大きく、発熱量が相対的に最も大きいものである一方で、残余の発熱する端子１８、２５、３１、３８は、それらに対して中間的な負荷に電気的に接続されるものであるため、対応する内部電気回路で消費される電力値が相対的に中間的な値をとり、発熱量も相対的に中間的な値をとるためであると考えられる。 Such a phenomenon has occurred because the terminal 14 of the driver IC 10 is electrically connected to the driving relay 5 for driving the light emitting diode of the indicator with a small load. The terminal 21 of the driver IC 20 is connected to a power supply relay 3 for supplying power to a starter having a large load. Since they are electrically connected, the power value consumed by the corresponding internal electric circuit is the largest and the amount of heat generation is relatively largest, while the remaining heat-generating terminals 18, 25, 31. , 38 are electrically connected to an intermediate load with respect to them, the power value consumed by the corresponding internal electric circuit takes a relatively intermediate value, and the amount of generated heat It believed to be due to taking a relatively intermediate values.
　よって、消費電力が最も小さい内部電気回路及び消費電力が中程度である内部電気回路を有するドライバＩＣ１０の動作時の発熱量が最も少なくて封止筐体の温度が最も低くなり、消費電力が最も大きい内部電気回路及び消費電力が中程度である内部電気回路を有するドライバＩＣ２０の発熱量が最も大きくて封止筐体の温度が最も高くなり、かつ、消費電力が中程度である内部電気回路を２つ有するドライバＩＣ３０の動作時の発熱量は中間的であるので封止筐体の温度がそれらの中間の温度になったものと結論づけられる。なお、ドライバＩＣ１０を小発熱ドライバＩＣと呼べば、ドライバＩＣ２０、３０は、動作時において、それらの封止筐体の温度がドライバＩＣ１０の封止筐体の温度よりも高いものであるから、大発熱ドライバＩＣと呼ぶことができる。 Therefore, the driver IC 10 having the internal electric circuit with the lowest power consumption and the internal electric circuit with the medium power consumption has the smallest amount of heat generated during operation, and the temperature of the sealed casing is the lowest, and the power consumption is the lowest. A driver IC 20 having a large internal electric circuit and an internal electric circuit with medium power consumption has the largest amount of heat generation, the highest temperature of the sealed casing, and an internal electric circuit with medium power consumption. Since the amount of heat generated during the operation of the two driver ICs 30 is intermediate, it can be concluded that the temperature of the sealed casing has reached an intermediate temperature. Note that if the driver IC 10 is called a small heat generating driver IC, the driver ICs 20 and 30 are large in operation because the temperature of their sealed casing is higher than the temperature of the sealed casing of the driver IC 10. It can be called a heat-generating driver IC.
　さて、ドライバＩＣ１０、２０、３０の配置関係については、基板ＳＢ上において、例えば、ドライバＩＣ１０を挟むようにドライバＩＣ２０、３０が配置されているのであるが、ここで、図３Ａ中で、実線で示すドライバＩＣ１０の位置を上方や下方に移動して、それぞれ２点鎖線で示すドライバＩＣ１０’の位置やドライバＩＣ１０”の位置に置いた場合には、実線で示すドライバＩＣ１０の位置におけるものに比較して、ドライバＩＣ２０、３０のそれぞれの封止筐体の温度が上昇し、更に、ドライバＩＣ１０の位置をより基板ＳＢの端部に向けて上方や下方に移動した場合には、ドライバＩＣ２０、３０のそれぞれの封止筐体の温度がより上昇していった。 Now, regarding the arrangement relationship of the driver ICs 10, 20, and 30, for example, the driver ICs 20 and 30 are arranged so as to sandwich the driver IC 10 on the substrate SB. Here, in FIG. When the position of the driver IC 10 shown is moved upward or downward and placed at the position of the driver IC 10 ′ indicated by the two-dot chain line or the position of the driver IC 10 ″, the position is compared with that at the position of the driver IC 10 indicated by the solid line. As a result, the temperature of the sealed housing of each of the driver ICs 20 and 30 rises, and when the position of the driver IC 10 is moved upward or downward toward the end of the substrate SB, the driver ICs 20 and 30 The temperature of each sealed casing increased further.
　このような現象が生じたのは、ドライバＩＣ１０の位置をドライバＩＣ２０、３０に対して移動することに対応して、動作時に発熱するドライバＩＣ２０、３０の一方の熱輻射が他方に互いにより大きく伝搬することに起因して、ドライバＩＣ２０、３０のそれぞれの封止筐体の温度が上昇していったためであると考えられる。 This phenomenon occurs because the thermal radiation of one of the driver ICs 20, 30 that generates heat during operation propagates to the other more greatly in response to the movement of the position of the driver IC 10 relative to the driver ICs 20, 30. This is considered to be because the temperature of the sealed housing of each of the driver ICs 20 and 30 has increased.
　より詳しく検討すると、ドライバＩＣ２０からドライバＩＣ３０に向かう熱輻射は、主として、ドライバＩＣ２０の封止筐体における基板ＳＢの上面に垂直な縦側壁のうちドライバＩＣ３０に対面する縦壁２０Ａ、２０Ｂから発せられて、ドライバＩＣ３０の封止筐体における基板ＳＢの上面に垂直な縦側壁のうちドライバＩＣ２０に対面する縦壁３０Ａ、３０Ｂで受けられるため、ドライバＩＣ２０からドライバＩＣ３０に向かう熱輻射の輻射領域は、図３Ａに示すように、ドライバＩＣ２０の縦壁２０Ａ、２０Ｂの輪郭端及びドライバＩＣ３０の縦壁３０Ａ、３０Ｂの輪郭端で規定される領域Ｈである。また、ドライバＩＣ３０からドライバＩＣ２０に向かう熱輻射の輻射領域も同様に規定されて、図３Ａに示す領域Ｈに一致するものと評価できる。 Considering in more detail, the heat radiation from the driver IC 20 toward the driver IC 30 is mainly emitted from the vertical walls 20A and 20B facing the driver IC 30 among the vertical side walls perpendicular to the upper surface of the substrate SB in the sealing housing of the driver IC 20. Since the vertical walls 30A and 30B facing the driver IC 20 among the vertical side walls perpendicular to the upper surface of the substrate SB in the sealing housing of the driver IC 30 are received, the radiation area of the heat radiation from the driver IC 20 toward the driver IC 30 is As shown in FIG. 3A, the region H is defined by the contour edges of the vertical walls 20A and 20B of the driver IC 20 and the contour edges of the vertical walls 30A and 30B of the driver IC 30. Further, a radiation region of heat radiation from the driver IC 30 toward the driver IC 20 is defined in the same manner, and can be evaluated as matching with the region H shown in FIG. 3A.
　つまり、かかるドライバＩＣ２０、３０相互間の熱輻射領域Ｈを介して、動作時に発熱するドライバＩＣ２０、３０の一方の熱輻射が他方に互いに伝搬して、ドライバＩＣ２０、３０のそれぞれの封止筐体の温度が上昇するものと考えられる。 That is, the thermal radiation of one of the driver ICs 20 and 30 that generate heat during operation propagates to the other through the thermal radiation region H between the driver ICs 20 and 30, and the respective sealed housings of the driver ICs 20 and 30. It is thought that the temperature increases.
　そして、このような熱輻射領域Ｈにおいて、伝搬する熱を吸収する吸収物体が無ければ、ドライバＩＣ２０、３０は、互いが発する熱をそのまま受けるため、それぞれの封止筐体の温度が本来の温度よりも上昇する一方で、熱輻射領域Ｈにおいて、伝搬する熱を吸収する吸収物体を配置すれば、ドライバＩＣ２０、３０が互いに発する熱の一部が吸収されることになって、ドライバＩＣ２０、３０は、互いが発する熱から吸収物体で吸収される熱を差し引いた量の熱を受けるようになると考えられる。 And, in such a heat radiation region H, if there is no absorbing object that absorbs the heat that propagates, the driver ICs 20 and 30 receive the heat generated by each other as they are, so that the temperature of each sealed casing is the original temperature. On the other hand, if an absorbing object that absorbs propagating heat is arranged in the heat radiation region H, part of the heat generated by the driver ICs 20 and 30 is absorbed, and the driver ICs 20 and 30 Are considered to receive an amount of heat obtained by subtracting the heat absorbed by the absorbing object from the heat generated by each other.
　ここで、前述したように、動作時のドライバＩＣ１０の封止筐体の温度は、動作時のドライバＩＣ２０、３０のそれぞれの封止筐体の温度よりも低いものである。よって、熱輻射領域Ｈに、ドライバＩＣ１０を配置すると、主としてその封止筐体が、ドライバＩＣ２０、３０が互いに発する熱を吸収する吸収物体として機能することになり、結果として、ドライバＩＣ２０、３０が受ける熱量が減少して、ドライバＩＣ２０、３０のそれぞれの封止筐体の温度が低下し得ることが分かる。 Here, as described above, the temperature of the sealed casing of the driver IC 10 during operation is lower than the temperature of the respective sealed casings of the driver ICs 20 and 30 during operation. Therefore, when the driver IC 10 is disposed in the heat radiation region H, the sealed housing mainly functions as an absorbing object that absorbs the heat generated by the driver ICs 20 and 30, and as a result, the driver ICs 20 and 30 It can be seen that the amount of heat received can decrease and the temperature of the sealed housing of each of the driver ICs 20 and 30 can decrease.
　更に、図３Ａ中にで実線で示す位置にドライバＩＣ１０を配置すれば、ドライバＩＣ１０の封止筐体が、ドライバＩＣ２０、３０のそれぞれの封止筐体の間で、熱輻射領域Ｈの実質全域を遮るものであるから、そこを伝搬する熱量をより多く吸収することができて、２点鎖線で示すドライバＩＣ１０’の位置やドライバＩＣ１０”の位置に置いた場合に比較して、ドライバＩＣ２０、３０のそれぞれの封止筐体の温度がより低下するものであることが理解できる。 Further, if the driver IC 10 is arranged at a position indicated by a solid line in FIG. 3A, the sealing housing of the driver IC 10 is between the sealing housings of the driver ICs 20 and 30 and substantially the entire heat radiation region H. Therefore, it is possible to absorb a larger amount of heat propagating through the driver IC 20, compared to the case where the driver IC 10 ′ and the position of the driver IC 10 ″ indicated by a two-dot chain line are placed. It can be understood that the temperature of each of the 30 sealed casings is further lowered.
　従って、特殊な吸収物体を適用しなくとも、ドライバＩＣ２０、３０のそれぞれの封止筐体の間で熱輻射領域Ｈの実質全域を遮るように熱輻射領域Ｈに重ねて、動作時の封止筐体の温度が低いドライバＩＣ１０を配置すれば、動作時のドライバＩＣ２０、３０のそれぞれの封止筐体の温度をより低く維持できることが理解できる。 Therefore, even when a special absorbing object is not applied, it is overlapped on the heat radiation area H so as to block the substantial whole area of the heat radiation area H between the respective sealing housings of the driver ICs 20 and 30, and is sealed during operation. It can be understood that if the driver IC 10 having a low casing temperature is arranged, the temperature of the sealed casing of each of the driver ICs 20 and 30 during operation can be maintained lower.
　但し、基板ＳＢ上に実装され得るドライバＩＣ１０の位置は、周辺の電気部品等によりある程度限定されるから、熱輻射領域Ｈの実質全域を遮るようにドライバＩＣ１０を配置できない場合であっても、図３Ａ中に２点鎖線で示すドライバＩＣ１０’の位置やドライバＩＣ１０”の位置のように、熱輻射領域Ｈの少なくとも一部を遮るようにドライバＩＣ１０の封止筐体を配置すれば、動作時のドライバＩＣ２０、３０のそれぞれの封止筐体の温度を、熱輻射領域Ｈ内に全くドライバＩＣ１０を全く配置しない場合に比較して低下させることができるものである。また、かかる動作時の温度が相対的に低い小発熱ドライバＩＣ１０の封止筐体の形状としては、熱輻射領域Ｈを確実かつ効率的に遮る利便性からいえば、直方体状であることが好ましいといえる。 However, since the position of the driver IC 10 that can be mounted on the substrate SB is limited to some extent by the peripheral electrical components and the like, even if the driver IC 10 cannot be disposed so as to block the substantial entire area of the heat radiation region H, FIG. If the sealing housing of the driver IC 10 is arranged so as to block at least a part of the heat radiation area H, such as the position of the driver IC 10 ′ indicated by a two-dot chain line in 3A and the position of the driver IC 10 ″, The temperature of the sealed housing of each of the driver ICs 20 and 30 can be lowered as compared with the case where no driver IC 10 is disposed in the heat radiation region H. Further, the temperature during the operation is low. The shape of the sealing housing of the relatively low heat-generating driver IC 10 is a rectangular parallelepiped in terms of the convenience of blocking the heat radiation region H reliably and efficiently. It can be said that Masui.
　また、このようにドライバＩＣ２０、３０のそれぞれの封止筐体の間で熱輻射領域Ｈの実質全域を遮るように、動作時の封止筐体の温度が低いドライバＩＣ１０を配置する際には、ドライバＩＣ２０においては、温度が相対的に高い端子２１、２５が存在し、ドライバＩＣ３０においては、温度が相対的に高い端子３１、３８が存在して、かかる端子２１、２５、３１、３８は発熱源になり得る。 Further, when the driver IC 10 having a low temperature of the sealing casing during operation is disposed so as to block the substantial entire area of the heat radiation region H between the sealing casings of the driver ICs 20 and 30 as described above. In the driver IC 20, there are terminals 21 and 25 having a relatively high temperature. In the driver IC 30, terminals 31 and 38 having a relatively high temperature exist, and the terminals 21, 25, 31, and 38 are Can be a heat source.
　そこで、これらの端子２１、２５、３１、３８を、対応するドライバＩＣ２０、３０に対面しないように配置すれば、これらから発する熱量を熱輻射領域Ｈに重畳することを避けることができて、熱輻射領域Ｈを伝播する熱量を低減し得ることになる。もちろん、これらの端子２１、２５、３１、３８の全部を、対応するドライバＩＣ２０、３０に直接対面しないように配置することは、ドライバＩＣ２０、３０の配置制約上で困難な場合が多いので、図３Ａに示すように、ドライバＩＣ２０の端子２１のみをドライバＩＣ３０に直接対面しないように配置すると共に、ドライバＩＣ２０の端子２５及びドライバＩＣ３０の端子３１、３８は、ドライバＩＣ１０の封止筐体を間に介在させて配置し、それによってかかる端子２５、３１、３８が、対応するドライバＩＣ２０、３０に結果的に直接対面しないように構成してもよい。 Therefore, if these terminals 21, 25, 31, 38 are arranged so as not to face the corresponding driver ICs 20, 30, it is possible to avoid the amount of heat generated from these being superimposed on the heat radiation region H, and The amount of heat propagating through the radiation region H can be reduced. Of course, it is often difficult to arrange all of these terminals 21, 25, 31, and 38 so as not to directly face the corresponding driver ICs 20 and 30 due to the arrangement restrictions of the driver ICs 20 and 30. 3A, only the terminal 21 of the driver IC 20 is arranged so as not to directly face the driver IC 30, and the terminal 25 of the driver IC 20 and the terminals 31 and 38 of the driver IC 30 are interposed between the sealing housings of the driver IC 10. The terminals 25, 31, and 38 may be arranged so as to intervene so that they do not directly face the corresponding driver ICs 20 and 30.
　さて、以上のような動作時の封止筐体の温度が相対的に低い小発熱ドライバＩＣ１０及び動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣ２０、３０に関する実装指針は、ドライバＩＣの数がより増加した場合であっても適用可能であるので、次に、図４Ａ及び図４Ｂをも参照して、ドライバＩＣの数がより増加した場合について詳細に説明する。 Now, the mounting guidelines for the small heat generating driver IC 10 in which the temperature of the sealing casing during operation as described above is relatively low and the large heat generating driver ICs 20 and 30 in which the temperature of the sealing casing during operation is relatively high are as follows: Since the present invention is applicable even when the number of driver ICs is further increased, the case where the number of driver ICs is further increased will be described in detail with reference to FIGS. 4A and 4B.
　図４Ａは、本実施形態における電子制御装置内で１つの大発熱ドライバＩＣの一方の側に２つの大発熱ドライバＩＣが配置された場合の対応するドライバＩＣ間の熱輻射の状態を示す上面図である。また、図４Ｂは、本実施形態における電子制御装置内で１つの大発熱ドライバＩＣの両側に各１つの大発熱ドライバＩＣが配置された場合の対応するドライバＩＣ間の熱輻射の状態を示す上面図である。なお、図中、ｘ軸及びｙ軸は、ｚ軸の方向を上下方向とするｘ軸、ｙ軸及びｚ軸から成る３軸直交座標系中の２軸である。 FIG. 4A is a top view showing a state of thermal radiation between corresponding driver ICs when two large heat generating driver ICs are arranged on one side of one large heat generating driver IC in the electronic control device according to the present embodiment. It is. FIG. 4B is a top view showing a state of thermal radiation between corresponding driver ICs when one large heat generating driver IC is arranged on both sides of one large heat generating driver IC in the electronic control device according to the present embodiment. FIG. In the figure, the x-axis and the y-axis are two axes in a three-axis orthogonal coordinate system including the x-axis, the y-axis, and the z-axis with the z-axis direction as the vertical direction.
　図４Ａに示すように、更に、動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣ４０が、動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣ２０に対して、動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣ３０と同じ側に配設される場合には、ドライバＩＣ２０、３０間に規定される熱輻射領域Ｈに加えて、同様の考え方で、ドライバＩＣ２０、４０間に熱輻射領域Ｈ１が規定されると共に、ドライバＩＣ３０、４０間に熱輻射領域Ｈ２が規定される。 Further, as shown in FIG. 4A, the large heat generating driver IC 40 in which the temperature of the sealed casing during operation is relatively high is larger than the large heat generating driver IC 20 in which the temperature of the sealing casing during operation is relatively high. In the case where the temperature of the sealed casing during operation is disposed on the same side as the relatively large heat generating driver IC 30, in addition to the heat radiation area H defined between the driver ICs 20, 30, the same In view of this, a heat radiation region H1 is defined between the driver ICs 20 and 40, and a heat radiation region H2 is defined between the driver ICs 30 and 40.
　よって、かかる場合には、熱輻射領域Ｈ、Ｈ１、Ｈ２のそれぞれに重なるように、ドライバＩＣ１０のような動作時の封止筐体の温度が相対的に低い小発熱ドライバＩＣの封止筐体を１つ又は複数配設すれば、熱輻射領域Ｈ、Ｈ１、Ｈ２を遮ることができ、ドライバＩＣ２０、３０間及びドライバＩＣ２０、４０間をそれぞれ伝搬する熱量を吸収し得て、動作時のドライバＩＣ２０、３０、４０のそれぞれの封止筐体の温度を、低下させることができるものである。なお、動作時の封止筐体の温度が相対的に低い小発熱ドライバＩＣの封止筐体のサイズが小さい場合には、熱輻射領域Ｈ、Ｈ１、Ｈ２がそれぞれ重なる熱輻射領域Ｈ３、Ｈ４、Ｈ５に重ねて分散的に複数配置すれば、効果的に伝搬する熱量を低減することも可能である。 Therefore, in such a case, the sealing case of the small heat-generating driver IC in which the temperature of the sealing case at the time of operation such as the driver IC 10 is relatively low so as to overlap each of the heat radiation regions H, H1, and H2. If one or more are disposed, the heat radiation areas H, H1, and H2 can be shielded, and the amount of heat that propagates between the driver ICs 20 and 30 and between the driver ICs 20 and 40 can be absorbed, and the driver during operation The temperature of each sealed casing of the IC 20, 30, 40 can be lowered. When the size of the sealing housing of the small heat generating driver IC is relatively low during operation, the heat radiation regions H3, H4 where the heat radiation regions H, H1, H2 overlap each other. If a plurality of H5 are disposed in a distributed manner, the amount of heat that propagates effectively can be reduced.
　また、図４Ｂに示すように、更に、動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣ５０が、動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣ２０に対して、動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣ３０と反対側に配設される場合には、ドライバＩＣ２０、３０間に規定される熱輻射領域Ｈに加えて、同様の考え方で、ドライバＩＣ２０、５０間に熱輻射領域Ｈ６が規定される。なお、ドライバＩＣ３０、６０間の距離は相対的に大きいので、これらの間の熱輻射は実質問題とはならない。 Further, as shown in FIG. 4B, the large heat generating driver IC 50 in which the temperature of the sealed casing during operation is relatively high is changed to the large heat generating driver IC 20 in which the temperature of the sealing casing during operation is relatively high. On the other hand, in the case where it is disposed on the opposite side to the large heat generating driver IC 30 where the temperature of the sealed casing during operation is relatively high, in addition to the heat radiation region H defined between the driver ICs 20 and 30, In the same way, a heat radiation region H6 is defined between the driver ICs 20 and 50. Since the distance between the driver ICs 30 and 60 is relatively large, the thermal radiation between them does not cause a substantial problem.
　よって、かかる場合においても、熱輻射領域Ｈ、Ｈ６のそれぞれに重なるように、ドライバＩＣ１０のような動作時の封止筐体の温度が相対的に低い小発熱ドライバＩＣの封止筐体を複数配設すれば、熱輻射領域Ｈ、Ｈ６を遮ることができ、ドライバＩＣ２０、３０間及びドライバＩＣ２０、５０間をそれぞれ伝搬する熱量を吸収し得て、動作時のドライバＩＣ２０、３０、５０のそれぞれの封止筐体の温度を、低下させることができるものである。 Therefore, even in such a case, a plurality of sealing housings for the small heat-generating driver IC, such as the driver IC 10, in which the temperature of the sealing housing during operation is relatively low so as to overlap each of the heat radiation regions H and H 6. If arranged, the heat radiation areas H and H6 can be blocked, the amount of heat propagating between the driver ICs 20 and 30 and between the driver ICs 20 and 50 can be absorbed, and each of the driver ICs 20, 30 and 50 during operation can be absorbed. The temperature of the sealed casing can be lowered.
　従って、このような考え方を拡張していけば、動作時の封止筐体の温度が相対的に低い小発熱ドライバＩＣ及び動作時の封止筐体の温度が相対的に高い大発熱ドライバＩＣが、合計ｎ（ｎは３以上の自然数）個でもって基板上に実装された場合において、以上説明したドライバＩＣの実装指針を適用自在であることが分かる。 Therefore, if such a concept is expanded, a small heat generating driver IC in which the temperature of the sealed casing during operation is relatively low and a large heat generating driver IC in which the temperature of the sealing casing during operation is relatively high However, it can be seen that when the total n (n is a natural number of 3 or more) are mounted on the substrate, the driver IC mounting guidelines described above can be applied.
　また、以上の構成においては、ドライバＩＣ１０、２０、３０等を電子制御装置とは別のドライバ装置として独立させても成立するものであるので、かかる構成を変形例として、更に図５及び図６をも参照して、以下、詳細に説明する。 Further, in the above configuration, the driver ICs 10, 20, 30 and the like can be established independently as a driver device different from the electronic control device. Therefore, this configuration is further modified as a modification example in FIGS. Hereinafter, it will be described in detail with reference to FIG.
　図５は、本実施形態における変形例の電子制御装置の接続構成を示すブロック図である。また、図６は、本変形例における電子制御装置とドライバ装置とが同一パッケージ内に配置されて積層された構成を示す断面図である。 FIG. 5 is a block diagram illustrating a connection configuration of an electronic control device according to a modification of the present embodiment. FIG. 6 is a cross-sectional view showing a configuration in which the electronic control device and the driver device in the present modification are arranged and stacked in the same package.
　本変形例における構成は、以上の構成に対して、ドライバＩＣ１０、２０、３０等を電子制御装置とは別のドライバ装置として独立させていることが主たる相違点であり、残余の構成は同様である。よって、本変形においては、かかる相違点に着目して説明することとし、同様な構成については同一の符号を付して適宜説明を簡略化又は省略する。 The configuration in this modification is mainly different from the above configuration in that the driver ICs 10, 20, 30 and the like are independent from the electronic control device as the driver device, and the remaining configuration is the same. is there. Therefore, in this modification, the description will be made paying attention to such a difference, and the same components are denoted by the same reference numerals, and the description will be simplified or omitted as appropriate.
　具体的には、図５に示すように、本変形例においては、ドライバ装置６０が、ドライバＩＣ１０、２０、３０を内蔵して電子制御装置７０とは別にモジュール化されており、更に図６に示すように、ドライバ装置６０と電子制御装置７０とは、同一の筐体等のパッケージＰＫ内に封止されて一体化された構成を有し、所望の支持体Ｂに載置されて車両等に固定される構成を有する。かかるパッケージＰＫは、例えば樹脂封止体であり、トランスファーモールド法等により成形される。また、ドライバ装置６０は、マイクロコンピュータである電子制御装置７０及び各駆動対象電気部品３～８に対応して接続されて、電子制御装置７０の制御の下で動作し、駆動対象電気部品３～８をそれぞれ駆動する。 Specifically, as shown in FIG. 5, in the present modification, the driver device 60 includes driver ICs 10, 20, and 30 and is modularized separately from the electronic control device 70. Further, FIG. As shown, the driver device 60 and the electronic control device 70 have a configuration in which they are sealed and integrated in a package PK such as the same housing, and are mounted on a desired support B to be a vehicle or the like. It has the composition fixed to. Such a package PK is, for example, a resin sealing body, and is molded by a transfer molding method or the like. The driver device 60 is connected to the electronic control device 70, which is a microcomputer, and each of the driving target electrical components 3 to 8, and operates under the control of the electronic control device 70. 8 are each driven.
　このような構成によれば、図３Ａ及び図３Ｂに示す構成と同様に、ドライバＩＣ２０、３０のそれぞれの封止筐体の間で熱輻射領域Ｈの実質全域を遮るように熱輻射領域Ｈに重ねて、動作時の封止筐体の温度が低いドライバＩＣ１０を配置すれば、動作時のドライバＩＣ２０、３０のそれぞれの封止筐体の温度をより低く維持できると共に、ドライバ装置６０と電子制御装置７０とを同一の筐体等のパッケージＰＫ内に収容して、ドライバ装置６０と電子制御装置７０との全体構成をコンパクト化することができることとなる。 According to such a configuration, similarly to the configuration shown in FIGS. 3A and 3B, the heat radiation region H is blocked so as to block the substantial entire region of the heat radiation region H between the respective sealing housings of the driver ICs 20 and 30. If the driver IC 10 having a low temperature of the sealed casing during operation is arranged, the temperature of the sealed casing of each of the driver ICs 20 and 30 during operation can be kept lower, and the driver device 60 and the electronic control are controlled. The device 70 can be accommodated in a package PK such as the same housing so that the overall configuration of the driver device 60 and the electronic control device 70 can be made compact.
　なお、本実施形態においては、動作時に発熱する半導体素子としてドライバＩＣを例に挙げて説明したが、その他の動作時に発熱する半導体素子であっても、本実施形態の実装指針は適用できることはもちろんである。 In the present embodiment, the driver IC is described as an example of the semiconductor element that generates heat during operation. However, the mounting guidelines of the present embodiment can be applied to other semiconductor elements that generate heat during operation. It is.
　また、動作時の温度が相対的に高い大発熱ドライバＩＣの封止筐体を、直方体状として説明したが、同等の機能が発揮できるものであれば、体積は大きくなる傾向にはあるが円柱状等の他の封止筐体を適用してもかまわない。 Further, the sealing housing of the large heat generating driver IC having a relatively high temperature during operation has been described as a rectangular parallelepiped shape. However, if the equivalent function can be exhibited, the volume tends to increase, but the circle tends to increase. Other sealed casings such as a columnar shape may be applied.
　以上の構成によれば、第１の小発熱半導体素子、第１の大発熱半導体素子及び第２の大発熱半導体素子が、単一の基板上の同一面側に実装され、かつ、第１の大発熱半導体素子及び第２の大発熱半導体素子相互間の熱輻射領域内に、第１の小発熱半導体素子の筐体の少なくとも一部が配置されていることにより、部品点数を増加させることなく簡便な構成により、統一的な指針でもって、電子制御装置を構成する半導体素子の動作時の温度が不要に上昇することを防止しながら、基板上に半導体素子を実装することができる。 According to the above configuration, the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element are mounted on the same surface side on the single substrate, and the first By disposing at least a part of the casing of the first small heat generating semiconductor element in the heat radiation region between the large heat generating semiconductor element and the second large heat generating semiconductor element, the number of components is not increased. With a simple configuration, the semiconductor element can be mounted on the substrate while preventing the temperature during operation of the semiconductor element constituting the electronic control device from being unnecessarily increased with a unified guideline.
　また、第１の大発熱半導体素子及び第２の大発熱半導体素子との関係において、大発熱端子同士が対面しないように、基板上に半導体素子が実装されているため、電子制御装置を構成する半導体素子の動作時の温度が不要に上昇することをより確実に防止することができる。 In addition, since the semiconductor element is mounted on the substrate so that the large heat generating terminals do not face each other in the relationship between the first large heat generating semiconductor element and the second large heat generating semiconductor element, the electronic control device is configured. It can prevent more reliably that the temperature at the time of operation | movement of a semiconductor element rises unnecessarily.
　また、第１の小発熱半導体素子の封止筐体が、直方体形状を有することにより、簡便な構成で確実に半導体素子間の熱輻射領域を遮って熱量を吸収することができ、電子制御装置を構成する半導体素子の動作時の温度が不要に上昇することをより確実に防止することができる。 In addition, since the first small heat-generating semiconductor element sealing casing has a rectangular parallelepiped shape, the heat radiation area between the semiconductor elements can be reliably blocked with a simple configuration, and the amount of heat can be absorbed. It is possible to more reliably prevent the temperature at the time of operation of the semiconductor element constituting the element from rising unnecessarily.
　また、第１の小発熱半導体素子、第１の大発熱半導体素子及び第２の大発熱半導体素子はモジュール化されたドライバ装置を構成し、かかるドライバ装置とその動作を制御する電子制御装置と、が同一のパッケージ内に配置されていることにより、ドライバ装置を構成する半導体素子の動作時の温度が不要に上昇することを確実に抑制しながら、その全体構成をコンパクト化することができる。 Further, the first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element constitute a modularized driver device, and the driver device and an electronic control device for controlling the operation of the driver device, Are disposed in the same package, the entire configuration can be made compact while reliably suppressing an undesired increase in temperature during operation of the semiconductor elements constituting the driver device.
　なお、本発明においては、部材の種類、配置、個数等は前述の実施形態に限定されるものではなく、その構成要素を同等の作用効果を奏するものに適宜置換する等、発明の要旨を逸脱しない範囲で適宜変更可能であることはもちろんである。 In the present invention, the type, arrangement, number, and the like of the members are not limited to the above-described embodiments, and the components depart from the gist of the invention, such as appropriately replacing the constituent elements with those having the same operational effects. Of course, it can be appropriately changed within the range not to be.
　以上のように、本発明においては、特殊なドライバＩＣ等の半導体素子の構成を採用したり、特殊な吸収物体等を付加する構成を採用することなく、動作時等に発熱するドライバＩＣ等の半導体素子の熱の影響を低減することのできる電子制御装置を提供することができ、その汎用普遍的な性格から車両等の電気部品の駆動装置に広範に適用され得るものと期待される。 As described above, in the present invention, the configuration of a semiconductor element such as a special driver IC or the like, or the configuration of a driver IC that generates heat during operation or the like without adopting a configuration that adds a special absorbing object or the like is adopted. An electronic control device capable of reducing the influence of heat of the semiconductor element can be provided, and it is expected that the electronic control device can be widely applied to a drive device for an electrical component such as a vehicle because of its general-purpose universal character.

Claims (3)

  1. 　各々が筐体内で集積回路化され動作時に発熱するｎ（ｎは３以上の自然数）個の半導体素子を備える電子制御装置であって、　前記ｎ個の半導体素子は、動作時の発熱量が相対的に小さい少なくとも１つの第１の小発熱半導体素子と、動作時の発熱量が前記第１の小発熱半導体素子の前記発熱量よりも相対的に大きい第１の大発熱半導体素子と、動作時の発熱量が前記第１の小発熱半導体素子の前記発熱量よりも相対的に大きい第２の大発熱半導体素子と、を含み、　前記第１の小発熱半導体素子、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子が、単一の基板上の同一面側に実装され、かつ、　前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子相互間の熱輻射領域内に、前記第１の小発熱半導体素子の筐体の少なくとも一部が配置されていることを特徴とする電子制御装置。 Each of the electronic control devices includes n (n is a natural number of 3 or more) semiconductor elements that are integrated in a housing and generate heat during operation, and the n semiconductor elements generate a relative amount of heat during operation. At least one first small heat-generating semiconductor element, a first large heat-generating semiconductor element in which the amount of heat generated during operation is relatively larger than the amount of heat generated by the first small heat-generating semiconductor element, and during operation A second large heat-generating semiconductor element that is relatively larger than the heat generation amount of the first small-heat-generating semiconductor element, and the first small-heat-generating semiconductor element and the first large-heat-generating semiconductor The element and the second large heat generating semiconductor element are mounted on the same surface on a single substrate, and the heat radiation area between the first large heat generating semiconductor element and the second large heat generating semiconductor element In the housing of the first small heat-generating semiconductor element. An electronic control unit, wherein a portion is located even without.
  2. 　前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子は、それらの内部電気回路に起因して、発熱量が相対的に大きい大発熱端子をそれぞれ有し、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子との関係において、前記大発熱端子同士は対面しないことを特徴とする請求項１に記載の電子制御装置。 The first large heat generating semiconductor element and the second large heat generating semiconductor element each have a large heat generating terminal that generates a relatively large amount of heat due to their internal electric circuit, and the first large heat generating semiconductor element. The electronic control device according to claim 1, wherein the large heat generating terminals do not face each other in a relationship between the semiconductor element and the second large heat generating semiconductor element.
  3. 　前記第１の小発熱半導体素子、前記第１の大発熱半導体素子及び前記第２の大発熱半導体素子はモジュール化されたドライバ装置を構成し、前記ドライバ装置と前記ドライバ装置の動作を制御する前記電子制御装置と、が同一のパッケージ内に配置されていることを特徴とする請求項１に記載の電子制御装置。 The first small heat generating semiconductor element, the first large heat generating semiconductor element, and the second large heat generating semiconductor element constitute a modularized driver device, and control the operation of the driver device and the driver device. The electronic control device according to claim 1, wherein the electronic control device is disposed in the same package.
PCT/JP2011/056021 2010-03-25 2011-03-15 Electronic control device WO2011118444A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201180011625.2A CN102782844B (en) 2010-03-25 2011-03-15 Electronic control device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010070996A JP5490591B2 (en) 2010-03-25 2010-03-25 Electronic control unit
JP2010-070996 2010-03-25

Publications (1)

Publication Number Publication Date
WO2011118444A1 true WO2011118444A1 (en) 2011-09-29

Family

ID=44673001

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/056021 WO2011118444A1 (en) 2010-03-25 2011-03-15 Electronic control device

Country Status (4)

Country Link
JP (1) JP5490591B2 (en)
CN (1) CN102782844B (en)
TW (1) TWI456732B (en)
WO (1) WO2011118444A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697364A (en) * 1992-07-14 1994-04-08 Ncr Internatl Inc Multichip module provided with multi-partition
JPH07297518A (en) * 1994-04-22 1995-11-10 Matsushita Electric Works Ltd Mounting structure of electronic part
JP2003037241A (en) * 2001-07-24 2003-02-07 Hitachi Ltd Electrical circuit board package item and manufacturing method for the electric circuit board package item

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4448101B2 (en) * 2006-02-24 2010-04-07 レノボ・シンガポール・プライベート・リミテッド Electronic device cooling system, computer and cooling method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697364A (en) * 1992-07-14 1994-04-08 Ncr Internatl Inc Multichip module provided with multi-partition
JPH07297518A (en) * 1994-04-22 1995-11-10 Matsushita Electric Works Ltd Mounting structure of electronic part
JP2003037241A (en) * 2001-07-24 2003-02-07 Hitachi Ltd Electrical circuit board package item and manufacturing method for the electric circuit board package item

Also Published As

Publication number Publication date
TW201203502A (en) 2012-01-16
JP5490591B2 (en) 2014-05-14
TWI456732B (en) 2014-10-11
CN102782844B (en) 2015-03-18
JP2011204921A (en) 2011-10-13
CN102782844A (en) 2012-11-14

Similar Documents

Publication Publication Date Title
US9712039B2 (en) In-vehicle power conversion system
JP4407759B2 (en) Electronic control unit
JP5418851B2 (en) Electronic control unit
JP2012195525A (en) Electronic controller
JP4958990B2 (en) Automotive power converter
US11011996B2 (en) Power converter
CN211819625U (en) Bearing housing and turbocharger
JP4400001B2 (en) Electronic control unit
JP2014197646A (en) Control device having high noise resistance
WO2021053907A1 (en) Electronic control device
JP5490591B2 (en) Electronic control unit
JP4133597B2 (en) Wiring block storage structure and wiring block storage method
JP5374271B2 (en) Electronic control unit
JP4871676B2 (en) Electronic circuit equipment
WO2015122239A1 (en) Controller for power converter
JP2003264386A (en) Electronic controller
KR101360730B1 (en) Cooling device and electronic device thereof
JP7135514B2 (en) Circuit board heat dissipation structure
JP2016050570A (en) On-vehicle electronic device
JP5367669B2 (en) Electrical junction box for vehicles
CN113519052A (en) Semiconductor device with a plurality of semiconductor chips
JP2005236036A (en) Electronic controller for vehicle
WO2021075360A1 (en) Electronic control device
US20230030412A1 (en) Electronic control device
JP3925248B2 (en) Electronic control unit

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180011625.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11759250

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1201004942

Country of ref document: TH

WWE Wipo information: entry into national phase

Ref document number: 9002/CHENP/2012

Country of ref document: IN

122 Ep: pct application non-entry in european phase

Ref document number: 11759250

Country of ref document: EP

Kind code of ref document: A1