CN102782844B - Electronic control device - Google Patents

Electronic control device Download PDF

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Publication number
CN102782844B
CN102782844B CN201180011625.2A CN201180011625A CN102782844B CN 102782844 B CN102782844 B CN 102782844B CN 201180011625 A CN201180011625 A CN 201180011625A CN 102782844 B CN102782844 B CN 102782844B
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CN
China
Prior art keywords
drive
generating semiconductors
electronic
semiconductors element
controlled installation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180011625.2A
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Chinese (zh)
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CN102782844A (en
Inventor
阿相龙治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Astemo Ltd
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Keihin Dock Co Ltd
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Publication of CN102782844A publication Critical patent/CN102782844A/en
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Publication of CN102782844B publication Critical patent/CN102782844B/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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Abstract

Disclosed is an electronic control device wherein a first small heat-producing semiconductor element (10), a first large heat-producing semiconductor element (20), and a second large heat-producing semiconductor element (30) are provided coplanar on the surface of a uniform substrate (SB). Further, at least one part of a housing of the small heat-producing semiconductor element is disposed inside the mutual thermal radiation area (H) of the first large heat-producing semiconductor element and the second large heat-producing semiconductor element.

Description

Electronic-controlled installation
Technical field
The present invention relates to electronic-controlled installation, the electronic-controlled installation of the large generating semiconductors element that caloric value when particularly relating to the relatively little little generating semiconductors element of caloric value when possessing work and work is relatively large.
Background technology
In recent years, be equipped in the various electronic-controlled installations on the vehicles such as automobile (ECU:Electronic Control Unit: electronic control unit), along with the High Level of required function, substrate is provided with multiple semiconductor element as singualtion IC (Integrated Circuit: integrated circuit).Meanwhile, for this electronic-controlled installation, require to make its size more miniaturized under the state maintaining its function, so present situation is, for the multiple semiconductor elements installed on substrate, require that improving packing density is further configured.
Like this, the packing density improving multiple semiconductor element in electronic-controlled installation is configured, also to consider that the temperature when semiconductor element works in electronic-controlled installation rises thus situation about impacting to the function etc. of semiconductor element, so also proposed the structure of the work adopting the semiconductor element stopping temperature rising.
Patent documentation 1 discloses the overtemperature protection system of monolithic IC.Specifically, drive IC 20 (monolithic IC) possesses: multiple external loading drive division 23 or communication control unit 24, carries out the exchange of various signal between itself and external loading 40 or external module 50; And main power source 22 (power supply unit); it provides the power supply of required size in the work of external loading drive division 23 grade; wherein; external loading drive division 23 etc. has and reaches temperature Tsub1 etc. (the 1st protection temperature) time in its temperature and stop (function control side overtemperature protection unit) such as the overheat protective function portion 23a of the function of this external loading drive division 23 grade; it is intended that; while the work ratio maintaining entire system, prevent the chip overall temperature rise of monolithic IC.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2009-171216 publication
Summary of the invention
Invent problem to be solved
But; according to the research of the present inventor; in the structure of this patent documentation 1; need to adopt following structure: in external loading drive division 23 grade of drive IC 20, arrange overheat protective function portion 23a etc.; when the temperature of external loading drive division 23 grade reaches (the 1st protection temperature) such as temperature Tsub1, stop the function of this external loading drive division 23 grade.It can thus be appreciated that, there is the trend that its structure becomes complicated.
In addition; according to the research of the present inventor; if adopt the general drive IC not arranging overheat protective function portion 23a etc. in this wise; then needing to arrange for absorbing from may the heat propagated to other drive IC of overheated drive IC or the additional absorption object shielded other drive IC or shielding object, all there is the trend that structure becomes complicated in any mode.
Namely, present situation is the electronic-controlled installation that requirement realizes the novel structure had for reaching following object, described object is: without the need to adopting the structure of the semiconductor elements such as special drive IC, and without the need to adopting the structure of additional special absorption object etc., the thermal impact of the semiconductor elements such as the drive IC of heating during work etc. can be reduced in.
The present invention is through above research and makes, its object is to, there is provided a kind of without the need to adopting the structure of the semiconductor elements such as special drive IC, and without the need to adopting the structure of additional special absorption object etc., the electronic-controlled installation of the thermal impact of the semiconductor elements such as the drive IC of heating during work etc. just can be reduced in.
The means of dealing with problems
In order to reach above object, 1st aspect of the present invention is a kind of electronic-controlled installation, this electronic-controlled installation has n the semiconductor element having carried out integrated circuit respectively and also operationally generate heat in housing, wherein n is the natural number of more than 3, it is characterized in that, a described n semiconductor element comprises: at least 1 the 1st little generating semiconductors element that caloric value during work is relatively little; The 1st large generating semiconductors element that caloric value during work is relatively larger than the described caloric value of described 1st little generating semiconductors element; And the caloric value 2nd large generating semiconductors element relatively larger than the described caloric value of described 1st little generating semiconductors element during work, described 1st little generating semiconductors element, the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element are installed in the same face side on single substrate, and being configured at least partially in the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element thermal radiation region each other of the housing of described 1st little generating semiconductors element.
In addition, on the basis of the present invention in the above-mentioned 1st, 2nd aspect is: the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element have the large heating terminal making caloric value relatively large due to their internal circuit respectively, in the relation of the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element, described large heating terminal each other not faced by.
In addition, on the basis of the present invention in the above-mentioned 1st or the 2nd, 3rd aspect is: the drive unit of described 1st little generating semiconductors element, the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element composition module, and the described electronic-controlled installation of the action of described drive unit and the described drive unit of control is configured in same encapsulation.
Invention effect
According to the electronic-controlled installation of the present invention the 1st aspect, 1st little generating semiconductors element, 1st large generating semiconductors element and the 2nd large generating semiconductors element are installed in the same face side on single substrate, and the 1st little generating semiconductors element housing be configured in the 1st large generating semiconductors element and the 2nd large generating semiconductors element thermal radiation region each other at least partially, thus, do not need to increase components number, can with easy structure, the unnecessary rising of temperature when preventing according to harmonized programme the work of semiconductor element forming electronic-controlled installation, on substrate, semiconductor element can be installed simultaneously.
According to the electronic-controlled installation of the present invention the 2nd aspect, in the relation of the 1st large generating semiconductors element and the 2nd large generating semiconductors element, on substrate, with generate heat greatly terminal each other not faced by mode semiconductor element is installed, so the unnecessary rising of temperature when can prevent the work of semiconductor element forming electronic-controlled installation more reliably.
According to the electronic-controlled installation of the present invention the 3rd aspect, the drive unit of the 1st little generating semiconductors element, the 1st large generating semiconductors element and the 2nd large generating semiconductors element composition module, the electronic-controlled installation of this drive unit and its action of control is configured in same encapsulation, thus, the unnecessary rising of temperature when reliably can suppress the work of semiconductor element forming drive unit, can make its compact overall structure again.
Accompanying drawing explanation
Fig. 1 is the block diagram of the syndeton of the electronic-controlled installation illustrated in embodiments of the present invention.
Fig. 2 A is the vertical view of the structure of the little heating drive IC illustrated in the electronic-controlled installation in present embodiment.
Fig. 2 B is the vertical view of the structure that the large heating of the 1st in the electronic-controlled installation in present embodiment drive IC is shown.
Fig. 2 C is the vertical view of the structure that the large heating of the 2nd in the electronic-controlled installation in present embodiment drive IC is shown.
Fig. 3 A is the vertical view of the structure after each drive IC in electronic-controlled installation that to have installed on substrate in present embodiment is shown.
Fig. 3 B is the end view of the structure after each drive IC in electronic-controlled installation that to have installed on substrate in present embodiment is shown, is equivalent to the A direction view of Fig. 3 A.
Fig. 4 A illustrates in electronic-controlled installation in the present embodiment, the vertical view of the thermal radiation state between the drive IC of the correspondence when the side of 1 drive IC of generating heat greatly is configured with 2 large heating drive IC.
Fig. 4 B illustrates in electronic-controlled installation in the present embodiment, the vertical view of the thermal radiation state between the drive IC of the correspondence when the both sides of 1 drive IC of generating heat greatly are respectively configured with 1 large heating drive IC.
Fig. 5 is the block diagram of the syndeton of the electronic-controlled installation of the variation illustrated in embodiments of the present invention.
Fig. 6 to illustrate in same encapsulation configuration and the cutaway view of the electronic-controlled installation in this variation stacked and the structure after drive unit.
Embodiment
Below, suitably with reference to accompanying drawing, the electronic-controlled installation in embodiments of the present invention is described in detail.
First, the structure of the electronic-controlled installation in present embodiment is described in detail with reference to Fig. 1, Fig. 2 A, Fig. 2 B and Fig. 2 C.
Fig. 1 is the block diagram of the syndeton of the electronic-controlled installation illustrated in present embodiment.Fig. 2 A is the vertical view of the structure of the little heating drive IC illustrated in the electronic-controlled installation in present embodiment.Fig. 2 B is the vertical view of the structure that the large heating of the 1st in the electronic-controlled installation in present embodiment drive IC is shown.In addition, Fig. 2 C is the vertical view of the structure that the large heating of the 2nd in the electronic-controlled installation in present embodiment drive IC is shown.
As shown in Figure 1, electronic-controlled installation 1 is microcomputer.Be connected to driven object electric component 3 ~ 8 accordingly respectively with this electronic-controlled installation 1, each driven object electric component 3 ~ 8 drives under the control of electronic-controlled installation 1, the action put rules into practice.In addition, electronic-controlled installation 1 has the memory element omitting illustrated calculation process element and necessity.
Here, the number of driven object electric component 3 ~ 8 and kind are not limited, such as, driven object electric component 3 is the power supply relays for powering to the starter starting vehicle internal combustion engine, driven object electric component 4 is the power supply relays for powering to the high-power accessory of vehicle, driven object electric component 5 is driving relays of the light-emitting diode for driving indicators of vehicles, driven object electric component 6 is for driving the solenoidal driving relay of the slip control of vehicle internal combustion engine, driven object electric component 7 is for driving the air pressure of vehicle fuel tank to adjust with solenoidal driving relay, and driven object electric component 8 is solenoidal driving relays of pressure adjusting of the lubricating oil for driving vehicle internal combustion engine.
In addition, in electronic-controlled installation 1, as respective singualtion and the semiconductor element operationally generated heat, number does not limit, such as, be built-in with drive IC 10,20,30.
Specifically, as shown in Figure 2 A, drive IC 10 has following structure: typically carry out sealed inside circuit with resinous rectangular-shaped seal casinghousing, and the terminal 11 ~ 18 be electrically connected with this internal circuit is extended to the outside of seal casinghousing.Here, the number of terminal 11 ~ 18 is not limited, especially, terminal 14 with for driving the driving relay 5 of the light-emitting diode of indicators of vehicles to be electrically connected, terminal 18 with for driving the solenoidal driving relay 6 of the slip control of vehicle internal combustion engine to be electrically connected.
As shown in Figure 2 B, drive IC 20 has following structure: typically carry out sealed inside circuit with resinous rectangular-shaped seal casinghousing, and the terminal 21 ~ 28 be electrically connected with this internal circuit is extended to the outside of seal casinghousing.Here, the number of terminal 21 ~ 28 is not limited, especially, terminal 21 is electrically connected with the power supply relay 3 for powering to the starter starting vehicle internal combustion engine, and terminal 25 is electrically connected with the power supply relay 4 for powering to the high-power accessory of vehicle.
As shown in Figure 2 C, drive IC 30 has following structure: typically carry out sealed inside circuit with resinous rectangular-shaped seal casinghousing, and the terminal 31 ~ 38 be electrically connected with this internal circuit is extended to the outside of seal casinghousing.Here, the number of terminal 31 ~ 38 is not limited, especially, terminal 31 is electrically connected with solenoidal driving relay 7 with for driving the air pressure of vehicle fuel tank to adjust, terminal 38 with for driving the solenoidal driving relay 8 of the pressure adjusting of the lubricating oil of vehicle internal combustion engine to be electrically connected.
Based on above structure, with further reference to Fig. 3 A and Fig. 3 B describe in detail drive IC 10,20,30 in electronic-controlled installation 1 in running order respectively time febrile state.
Fig. 3 A is the vertical view of the structure after each drive IC in electronic-controlled installation that to have installed on substrate in present embodiment is shown.In addition, Fig. 3 B is the end view of the structure after each drive IC in electronic-controlled installation that to have installed on substrate in present embodiment is shown, is equivalent to the A direction view of Fig. 3 A.In addition in the drawings, x-axis, y-axis and z-axis form 3 axle orthogonal coordinate systems, and the direction of z-axis is set to above-below direction.
As shown in Figure 3A and 3B, typically be configured with printed wiring as on the substrate SB of glass epoxy substrate, suitably avoid omitting illustrated periphery electric component etc. and drive IC 10,20,30 being installed respectively.
In this structure, driven object electric component 3 ~ 8 is connected to electronic-controlled installation 1, drive IC 10,20,30 is made to work the stipulated time respectively, measure the temperature of seal casinghousing in multiple position and ask for average, as a result, the temperature of the seal casinghousing of drive IC 10 is minimum, the temperature of the seal casinghousing of drive IC 20 is the highest, further, the temperature of the seal casinghousing of drive IC 30 is their middle temperature high and lower than drive IC 20 than drive IC 10.
Discuss in more detail, heating is observed in the terminal 14 of drive IC 10 and terminal 18, the terminal 21 of drive IC 20 and the terminal 31 of terminal 25 and drive IC 30 and terminal 38, but, the temperature of the terminal 14 of drive IC 10 is minimum, the temperature of the terminal 21 of drive IC 20 is the highest, and the terminal 31 of the terminal 18 of drive IC 10, the terminal 25 of drive IC 20 and drive IC 30 and the respective temperature of terminal 38 are the temperature in the middle of higher than the temperature of the terminal 14 of drive IC 10 and lower than the temperature of the terminal 21 of drive IC 20 their.
Occur such phenomenon be because: the terminal 14 of drive IC 10 is electrically connected with the driving relay 5 of the light-emitting diode of the indicating device for driving load little, so, the power value that corresponding internal circuit consumes is minimum, caloric value is minimum comparatively speaking, on the other hand, the terminal 21 of drive IC 20 is electrically connected with the power supply relay 3 of powering for the starter large to load, so, the power value that corresponding internal circuit consumes is maximum, caloric value is maximum comparatively speaking, on the other hand, compared with them, remaining terminal 18 that generates heat, 25, 31, 38 are electrically connected with medium load, so, the power value that corresponding internal circuit consumes relatively gets middle value, caloric value is also relatively get middle value.
Thus, draw the following conclusions: drive IC 10 caloric value operationally with the minimum internal circuit of power consumption and the moderate internal circuit of power consumption is minimum, the temperature of seal casinghousing is minimum, the caloric value with the drive IC 20 of the maximum internal circuit of power consumption and the moderate internal circuit of power consumption is maximum, the temperature of seal casinghousing is the highest, and, drive IC 30 caloric value operationally with two moderate internal circuits of power consumption mediates degree, so the temperature of seal casinghousing is the medium temperature of drive IC 10 and drive IC 20.In addition, if drive IC 10 is called little heating drive IC, then drive IC 20,30 operationally, and the temperature of their seal casinghousing is higher than the temperature of the seal casinghousing of drive IC 10, so drive IC 20,30 can be described as drive IC of generating heat greatly.
In addition, about drive IC 10, 20, the configuration relation of 30, on substrate SB, such as to clip the mode configuration driven IC 20 of drive IC 10, 30, and here, in figure 3 a, when the drive IC 10 made shown in solid line position upward or below move and be in position or the drive IC 10 of the drive IC 10 ' shown in double dot dash line respectively " position time, compared with the position of the drive IC 10 shown in solid line, drive IC 20, the temperature of 30 respective seal casinghousings rises, when make further the position of drive IC 10 towards substrate SB end upward or below is moved time, drive IC 20, the temperature of 30 respective seal casinghousings rises further.
The reason producing this phenomenon is: carry out the situation of movement accordingly with making the position of drive IC 10 relative to drive IC 20,30, the thermal radiation of the side in the drive IC 20,30 of generating heat during work is transmitted to the opposing party each other larger, causes drive IC 20, the temperature of 30 respective seal casinghousings rises.
Discuss in more detail, from drive IC 20 towards the thermal radiation of drive IC 30 mainly from the longitudinal side wall vertical with the upper surface of substrate SB of the seal casinghousing of drive IC 20 in the face of longitudinal wall 20A, 20B of drive IC 30
Send, and received by longitudinal wall 30A, the 30B in the face of drive IC 20 in the longitudinal side wall vertical with the upper surface of substrate SB of the seal casinghousing of drive IC 30, so, as shown in Figure 3A, be by the fixed region H of the profile end gauage of the profile end of longitudinal wall 20A, 20B of drive IC 20 and longitudinal wall 30A, 30B of drive IC 30 from drive IC 20 towards the thermal-radiating radiation areas of drive IC 30.In addition, specify too from drive IC 30 towards the thermal-radiating radiation areas of drive IC 20, can be evaluated as consistent with the region H shown in Fig. 3 A.
Namely think, via this drive IC 20,30 mutual thermal radiation region H, the thermal radiation of the side in the drive IC 20,30 of operationally generating heat propagates into the opposing party each other, and the temperature of drive IC 20,30 respective seal casinghousings rises.
And, in such thermal radiation region H, if there is no to the absorption object that the heat propagated absorbs, the then heat that sends each other of the direct reception of drive IC 20,30, so the temperature of respective seal casinghousing rises to higher than temperature originally, on the other hand, in the H of thermal radiation region, if be configured with the absorption object absorbed the heat propagated, then can absorb a part of heat that drive IC 20,30 sends mutually, drive IC 20,30 receives and deducts the heat after absorbing the heat that absorbs of object from the heat mutually sent.
Here, as mentioned above, the temperature of the seal casinghousing of the drive IC 10 during work is lower than the temperature of the drive IC 20 during work, 30 respective seal casinghousings.Thus, when being configured with drive IC 10 in the H of thermal radiation region, mainly the seal casinghousing of drive IC 10 plays function as the absorption object absorbing the heat that drive IC 20,30 sends mutually, result is known, heat that drive IC 20,30 receives reduces, and can make drive IC 20, the temperature of 30 respective seal casinghousings reduces.
Can understand in addition: if the position in figure 3 a shown in solid line is configured with drive IC 10, then the seal casinghousing of drive IC 10 has covered the essence Zone Full of thermal radiation region H between drive IC 20,30 respective seal casinghousings, so the heat propagated in this place can be absorbed in more, with the position or the drive IC 10 that are in the drive IC 10 ' shown in double dot dash line " position situation compared with, the temperature of drive IC 20,30 respective seal casinghousings reduces further.
Therefore, it is possible to understand: even if do not adopt special absorption object, as long as between drive IC 20,30 respective seal casinghousings with cover the mode of the essence Zone Full of thermal radiation region H and thermal radiation region H overlappingly configuration effort time seal casinghousing the low drive IC 10 of temperature, just can lower ground maintenance work time drive IC 20,30 respective seal casinghousings temperature.
But, the position that substrate SB can install drive IC 10 is subject to the restriction to a certain degree of the electric component of periphery etc., so, even if when can not to cover the mode configuration driven IC 10 of the essence Zone Full of thermal radiation region H, as long as the position of the drive IC 10 ' as shown in double dot dash line in Fig. 3 A or drive IC 10 " position, to cover the seal casinghousing of the mode configuration driven IC 10 at least partially of thermal radiation region H, just can make the drive IC 20 during work, the temperature of 30 respective seal casinghousings is than not having the situation of configuration driven IC 10 low completely in the H of thermal radiation region.In addition, as the shape of the seal casinghousing of the relatively low little heating drive IC 10 of temperature during this work, as long as be convenient to reliably and effectively cover thermal radiation region H, preferably rectangular-shaped.
In addition, when in this wise between drive IC 20,30 respective seal casinghousings to cover the mode configuration effort of the essence Zone Full of thermal radiation region H time the temperature of seal casinghousing low drive IC 10 time, in drive IC 20, there is the relatively high terminal of temperature 21,25, in drive IC 30, there is the relatively high terminal of temperature 31,38, described terminal 21,25,31,38 may become pyrotoxin.
Therefore, if these terminals 21,25,31,38 are configured to not with corresponding drive IC 20,30 relative, the heat that sends from them just can be avoided overlapping with thermal radiation region H, the heat propagated in the H of thermal radiation region can be reduced in.Obviously, in most instances, due to the restriction in the configuration of drive IC 20,30, be difficult to these terminals 21,25,31,38 are all configured to not directly in the face of corresponding drive IC 20,30, so as shown in Figure 3A, can be configured to: only the terminal 21 of drive IC 20 is configured to not directly in the face of drive IC 30, and, between come the terminal 25 of configuration driven IC 20 and the terminal 31,38 of drive IC 30 across the seal casinghousing of drive IC 10, thus, as a result, described terminal 25,31,38 is not directly in the face of corresponding drive IC 20,30.
And, the situation that the quantity that the relatively high large heating drive IC of the temperature of the little heating drive IC 10 relatively low to the temperature of seal casinghousing during work so above and seal casinghousing when working 20,30 relevant mount schemes also can be applied to drive IC increases further, then, the situation that the quantity describing drive IC in detail with reference to Fig. 4 A and Fig. 4 B increases further.
Fig. 4 A illustrates in electronic-controlled installation in the present embodiment, the vertical view of the thermal radiation state between the drive IC of the correspondence when the side of 1 drive IC of generating heat greatly configures 2 large heating drive IC.In addition, Fig. 4 B illustrates in electronic-controlled installation in the present embodiment, the vertical view of the thermal radiation state between the drive IC of the correspondence when the both sides of 1 drive IC of generating heat greatly respectively configure 1 large heating drive IC.In addition, in the drawings, x-axis and y-axis are above-below direction by 2 axles in the 3 axle orthogonal coordinate systems that x-axis, y-axis and z-axis are formed with z-axis direction.
As shown in Figure 4 A, in the large heating drive IC 20 relatively high relative to the temperature of seal casinghousing during work, when further large heating drive IC 40 relatively high for the temperature of seal casinghousing during work being configured in the identical side of the large heating drive IC 30 relatively high with the temperature of seal casinghousing when working, except the thermal radiation region H of regulation between drive IC 20,30, also between drive IC 20,40, specify thermal radiation region H1 based on same design, and specify thermal radiation region H2 between drive IC 30,40.
Thus, in this case, as long as the seal casinghousing of the little heating drive IC that the temperature of seal casinghousing when configuring the such work of one or more drive IC 10 in the mode overlapping respectively with thermal radiation region H, H1, H2 is relatively low, just can cover thermal radiation region H, H1, H2, the heat propagated between drive IC 20,30, between drive IC 20,40 and between drive IC 30,40 respectively can be absorbed, drive IC when can reduce work 20,30, the temperature of 40 respective seal casinghousings.In addition, when the size of the seal casinghousing of the little heating drive IC that the temperature of seal casinghousing is operationally relatively low is little, as long as at thermal radiation region H, H1, H2 distinguish in overlapping thermal radiation region H3, H4, H5, overlapping and configure multiple little heating drive IC dispersedly, also effectively can reduce the heat of propagation.
In addition, as shown in Figure 4 B, in the large heating drive IC 20 relatively high relative to the temperature of seal casinghousing during work, when further large heating drive IC 50 relatively high for the temperature of seal casinghousing during work being configured in the contrary side of the large heating drive IC 30 relatively high with the temperature of seal casinghousing when working, except the thermal radiation region H of regulation between drive IC 20,30, also between drive IC 20,50, specify thermal radiation region H6 based on same design.In addition, because the distance between drive IC 30,50 is relatively large, so the thermal radiation between them does not form substantive issue.
Thus, in this case, as long as the seal casinghousing of the little heating drive IC that the temperature of seal casinghousing when configuring the such work of multiple drive IC 10 in the mode overlapping respectively with thermal radiation region H, H6 is relatively low, just can cover thermal radiation region H, H6, the heat propagated between drive IC 20,30 and between drive IC 20,50 respectively can be absorbed, drive IC when can reduce work 20,30, the temperature of 50 respective seal casinghousings.
Therefore, if it is known to carry out expansion to such design, when the relatively high large heating drive IC of the temperature of seal casinghousing when substrate installed the relatively low little heating drive IC of the temperature of seal casinghousing when amounting to n (n is the natural number of more than 3) individual work and work, the mount scheme of drive IC described above can be applied freely.
In addition, in above structure, even if using drive IC 10,20,30 etc. independently as the drive unit different from electronic-controlled installation, be also set up, so, below with further reference to Fig. 5 and Fig. 6, this structure is described in detail as variation.
Fig. 5 is the block diagram of the syndeton of the electronic-controlled installation of the variation illustrated in present embodiment.In addition, Fig. 6 to illustrate in same encapsulation configuration and the cutaway view of the electronic-controlled installation in this variation stacked and the structure after drive unit.
The main difference point of the structure in this variation and above structure is, using drive IC 10,20,30 etc. independently as the drive unit different from electronic-controlled installation, remaining structure is identical.Thus, in this distortion, pay close attention to and be described with above-mentioned difference, same structure mark prosign is also suitably simplified or omitted the description.
Specifically, as shown in Figure 5, in this variation, drive unit 60 is built-in with drive IC 10,20,30 and has carried out modularization independently with electronic-controlled installation 70, further as shown in Figure 6, drive unit 60 and electronic-controlled installation 70 have and are sealed in the structure of integration in the encapsulation such as same housing PK, and have be placed in expectation supporter B on and be fixed on the structure of vehicle etc.This encapsulation PK is such as resin sealing body, is shaped by transfer moudling etc.In addition, drive unit 60 is connected accordingly with as the electronic-controlled installation 70 of microcomputer and each driven object electric component 3 ~ 8, carries out work, drive respectively to driven object electric component 3 ~ 8 under the control of electronic-controlled installation 70.
According to such structure, identical with the structure shown in Fig. 3 A and Fig. 3 B, if in drive IC 20, between 30 respective seal casinghousings with cover the mode of the essence Zone Full of thermal radiation region H and thermal radiation region H overlappingly configuration effort time the low drive IC 10 of the temperature of seal casinghousing, then can lower ground maintenance work time drive IC 20, the temperature of 30 respective seal casinghousings, and drive unit 60 and electronic-controlled installation 70 can be accommodated in the encapsulation PK such as same housing, thus make the compact overall structure of drive unit 60 and electronic-controlled installation 70.
In addition, in the present embodiment, as the semiconductor element of heating during work, illustrate drive IC, but, even the semiconductor element generated heat during other work, obviously also can apply the mount scheme of present embodiment.
In addition, although the seal casinghousing of large heating drive IC relatively high for temperature during work is set to rectangular-shaped being illustrated, as long as equivalent function can be played, then also can apply other seal casinghousing of cylindric grade, even if this exists the trend that volume becomes large.
According to above structure, 1st little generating semiconductors element, 1st large generating semiconductors element and the 2nd large generating semiconductors element are mounted the same face side on single substrate, and the 1st little generating semiconductors element housing be configured in the 1st large generating semiconductors element and the mutual thermal radiation region of the 2nd large generating semiconductors element at least partially, thus, do not need to increase components number, can with easy structure, the unnecessary rising of temperature when preventing based on harmonized programme the work of semiconductor element forming electronic-controlled installation, by semiconductor element mounting on substrate.
In addition, in the relation of the 1st large generating semiconductors element and the 2nd large generating semiconductors element, with generate heat greatly terminal each other not faced by mode, by semiconductor element mounting on substrate, so, the unnecessary rising of temperature when reliably can prevent the work of semiconductor element forming electronic-controlled installation further.
In addition, the seal casinghousing of the 1st little generating semiconductors element has rectangular shape, thus, easy structure can be utilized reliably to cover thermal radiation region between semiconductor element to absorb heat, the unnecessary rising of temperature when can prevent the work of the semiconductor element forming electronic-controlled installation more reliably.
In addition, the drive unit of the 1st little generating semiconductors element, the 1st large generating semiconductors element and the 2nd large generating semiconductors element composition module, by the electronic-controlled installation of this drive unit and its action of control is configured in same encapsulation, the unnecessary rising of temperature when reliably can suppress the work of semiconductor element forming drive unit, can make its compact overall structure again.
In addition, in the present invention, the kind, configuration, number etc. of parts not limit by above-mentioned execution mode, obviously can adopt and above-mentioned inscape is suitably replaced into the modes such as the inscape that can play equivalent effect effect, suitably change within a range not departing from the gist of the invention.
Utilizability in industry
Above, in the present invention, can provide a kind of without the need to adopting the structure of the semiconductor elements such as special drive IC and without the need to adopting the structure of additional special absorption object etc., the electronic-controlled installation of the thermal impact of the semiconductor elements such as the drive IC of heating during action etc. can be reduced in, from the characteristic that it is generally general, expect to be widely used in the drive unit of the electric component of vehicle etc.

Claims (2)

1. an electronic-controlled installation, this electronic-controlled installation has n the semiconductor element having carried out integrated circuit respectively and also operationally generate heat in housing, and wherein n is the natural number of more than 3, it is characterized in that,
A described n semiconductor element comprises: at least 1 the 1st little generating semiconductors element that caloric value during work is relatively little; The 1st large generating semiconductors element that caloric value during work is relatively larger than the described caloric value of described 1st little generating semiconductors element; And the caloric value 2nd large generating semiconductors element relatively larger than the described caloric value of described 1st little generating semiconductors element during work,
Described 1st little generating semiconductors element, the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element are installed in the same face side on single substrate, and being configured at least partially in the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element thermal radiation region each other of the housing of described 1st little generating semiconductors element
Described 1st large generating semiconductors element and the described 2nd large generating semiconductors element have the large heating terminal making caloric value relatively large due to their internal circuit respectively, in the relation of the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element, described large heating terminal each other not faced by.
2. electronic-controlled installation according to claim 1, is characterized in that,
The drive unit of described 1st little generating semiconductors element, the described 1st large generating semiconductors element and the described 2nd large generating semiconductors element composition module, the described electronic-controlled installation of the action of described drive unit and the described drive unit of control is configured in same encapsulation.
CN201180011625.2A 2010-03-25 2011-03-15 Electronic control device Expired - Fee Related CN102782844B (en)

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