WO2011118415A1 - 電子部品用パッケージのベース、電子部品用パッケージ - Google Patents

電子部品用パッケージのベース、電子部品用パッケージ Download PDF

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Publication number
WO2011118415A1
WO2011118415A1 PCT/JP2011/055738 JP2011055738W WO2011118415A1 WO 2011118415 A1 WO2011118415 A1 WO 2011118415A1 JP 2011055738 W JP2011055738 W JP 2011055738W WO 2011118415 A1 WO2011118415 A1 WO 2011118415A1
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WIPO (PCT)
Prior art keywords
base
electronic component
long side
terminal electrodes
electrodes
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Application number
PCT/JP2011/055738
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English (en)
French (fr)
Japanese (ja)
Inventor
佳樹 前田
強 草井
Original Assignee
株式会社大真空
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社大真空 filed Critical 株式会社大真空
Priority to US13/392,540 priority Critical patent/US8836095B2/en
Priority to CN201180005694.2A priority patent/CN102714187B/zh
Priority to JP2012506938A priority patent/JP5757287B2/ja
Publication of WO2011118415A1 publication Critical patent/WO2011118415A1/ja

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10068—Non-printed resonator
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electronic component package base and an electronic component package used for electronic devices and the like.
  • Examples of electronic components that require hermetic sealing include piezoelectric vibration devices such as crystal resonators, crystal filters, and crystal oscillators.
  • a metal thin film electrode is formed on the surface of the crystal diaphragm, and the crystal diaphragm (specifically, the metal thin film electrode) is hermetically sealed to protect the metal thin film electrode from the outside air. .
  • Patent Document 1 includes a base (mounting substrate) made of a ceramic material having a quartz diaphragm mounting portion and a lid (cover) having a reverse concave cross section, and the quartz diaphragm is hermetically sealed.
  • a configuration is disclosed in which the package is mounted and bonded to a circuit board via a conductive bonding material such as solder.
  • a terminal electrode is formed on the bottom surface of the base, and in order to confirm the connection state due to the rising of the solder (conductive bonding material), the terminal electrode is formed by a castellation formed on the side surface of the base. It extends from the bottom of the base to the side.
  • a so-called glass epoxy substrate in which a mesh-like glass fiber is impregnated with an epoxy resin material is widely used as a circuit board on which this conventional piezoelectric vibration device is mounted because of ease of processing and cost merit.
  • a solder paste is applied to the upper part of the electrode pattern of the circuit board by a method such as screen printing. Then, the terminal electrode of the package of the piezoelectric vibration device is mounted on the electrode pattern of the circuit board, and the solder paste is melted in a melting furnace (such as a heating furnace) to cause piezoelectric vibration on the circuit board. Solder the device.
  • the above-described conventional technology a stress is generated in the solder joining the electronic component package and the circuit board due to a difference in thermal expansion coefficient between the electronic component package and the circuit board, and a crack is generated.
  • a ceramic material such as alumina as a package for electronic components and a glass epoxy substrate as a circuit board.
  • the above-described conventional technology is used for an electronic component package of an in-vehicle electronic device.
  • the vehicle-mounted electronic device here is used in a harsh environment. When an electronic device (including an electronic component package and a circuit board) is used in a high-temperature and low-temperature environment, the electronic device for the electronic component is used. Due to the difference between the thermal expansion coefficient of the package and the thermal expansion coefficient of the circuit board, fatigue breakdown is likely to occur from the solder.
  • solder cracks are generated from a region close to the outer peripheral end of the bottom surface of the base. The generated solder cracks expand toward the center point of the bottom surface of the base 1. And finally, a solder crack progresses in the whole terminal electrode, and the junction point by the solder of the package for electronic components and a circuit board peels. By this peeling, the terminal electrode of the electronic component package is completely peeled from the circuit board, and the electrical connection between the terminal electrode of the electronic component package and the circuit board is lost (hereinafter, this state is referred to as an open state). ).
  • the present invention has been made to solve the above-described problems, and provides an electronic component package base and an electronic component package that prevent solder cracks and improve the reliability of mounting and bonding between the electronic component package and the circuit board. It is intended to provide.
  • a base of an electronic component package is an electronic component package base for holding an electronic component element, and the bottom surface of the base is rectangular in plan view,
  • a pair of rectangular terminal electrodes are formed to be bonded to the circuit board using a conductive bonding material, the pair of terminal electrodes are configured to be symmetrical with each other, and the long sides of the terminal electrodes are formed on the bottom surface. It is formed close to or in contact with the end of the long side, and the long side of each terminal electrode and the long side of the bottom surface are arranged in parallel, and the dimension of the long side of each terminal electrode is the length of the bottom surface. It is characterized by a dimension that exceeds half of the side.
  • the pair of terminal electrodes are configured to be symmetrical with each other, the long sides of the terminal electrodes are formed close to or in contact with the long side ends of the bottom surface, and the long sides of the terminal electrode and the bottom surface The long sides are arranged in parallel, and the dimension of the long side of each terminal electrode is configured to exceed half of the long side of the bottom surface. Even if formed, the region where the pair of terminal electrodes are opposed to each other in the short side direction of the bottom surface in the vicinity of the center of the long side of the bottom surface is secured, and a bonding region by the conductive bonding material in this region is secured.
  • the pair of terminal electrodes are configured to be symmetrical with each other, the long sides of the terminal electrodes are formed close to or in contact with the long side ends of the bottom surface, and the length of the terminal electrodes Since the side and the long side of the bottom surface are arranged in parallel, and the dimension of each terminal electrode long side is configured to exceed half of the long side of the bottom surface, it is electrically conductive along the long side direction of the bottom surface. A bonding material is applied. For this reason, generation
  • the conductive bonding material is continuously applied on the terminal electrode without interruption, the conductive bonding material is applied over two electrodes, for example. No cracks are generated from the inside of the terminal electrode toward the end of the terminal electrode. That is, a crack can be generated at one location, and even if a crack occurs, there is no occurrence of a crack from a plurality of directions starting from a plurality of locations, and the terminal electrode is opened from the circuit board. Thus, it can be prevented that the electronic component stops functioning.
  • bumps having a smaller plane area than the terminal electrodes may be integrally formed on the terminal electrodes.
  • the inventor found that for most of the cases of cracks in the conductive bonding material, the crack starting point of the conductive bonding material is the bottom end of the terminal electrode, and the crack generated at the bottom end of the terminal electrode is an obstacle to crack progression. If there is nothing to become, it has been found that cracks progress almost parallel to the bottom surface position of the terminal electrode from the starting point. Based on this knowledge, according to this configuration, bumps having a smaller planar area than the terminal electrodes are formed integrally on the top of the pair of terminal electrodes. The position at which the crack near the end in the long side direction of the terminal electrode where the crack of the bonding material first occurs and the position at which the crack near the center in the long side direction of the terminal electrode progress can be shifted.
  • a crack that tends to travel substantially parallel to the bottom surface position of the terminal electrode is affected by the end of the bump that is close to the end of the terminal electrode and is not parallel to the bottom of the terminal electrode.
  • the angle is changed in the direction of. That is, according to this structure, the bending point of a crack can be provided on the way. The presence of this bending point of the crack can delay the progress of the crack. As a result of the above, it is possible to prevent the terminal electrode from being opened and not functioning as an electronic component while improving the electromechanical connectivity of the terminal electrode.
  • the pair of terminal electrodes may be formed symmetrically with respect to the center line in the short side direction of the bottom surface.
  • the stress is not affected by the stress in the short side direction of the bottom surface. It can be uniformly dispersed.
  • the pair of terminal electrodes may be formed point-symmetrically with respect to the center point of the bottom surface.
  • the stress is not affected by the stress in the short side direction of the bottom surface. It can be uniformly distributed so as to rotate at the center point of the bottom surface of the base.
  • the width dimension of the gap region between the terminal electrodes may be the same as the width dimension in the short side direction of the terminal electrodes.
  • an electronic component package according to the present invention includes the base according to the present invention and a lid for hermetically sealing the electronic component element.
  • the base according to the present invention since the base according to the present invention is provided, the same effects as the base according to the present invention can be obtained. As a result, the base according to the present invention is hermetically sealed, and the reliability of circuit board mounting bonding can be improved at low cost.
  • the terminal electrode may include a plurality of electrodes, and may be bonded to an external circuit board via a conductive bonding material using the plurality of electrodes of the terminal electrode.
  • solder cracks can be prevented and the reliability of the mounting joint between the electronic component package and the circuit board can be improved.
  • FIG. 1 is a bottom view of a surface-mounted crystal resonator showing an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along line AA in a state where the surface-mounted crystal resonator of FIG. 1 is mounted on a circuit board.
  • FIG. 3 is a cross-sectional view taken along the line BB in a state where the surface-mounted crystal resonator of FIG. 1 is mounted on a circuit board.
  • FIG. 4 is a bottom view of a surface-mount type crystal resonator showing Modification 1 of the embodiment of the present invention.
  • FIG. 5 is a bottom view of a surface-mounted crystal resonator showing a second modification of the embodiment of the present invention.
  • FIG. 6 is a bottom view of a surface-mount type crystal resonator showing Modification 3 of the embodiment of the present invention.
  • FIG. 7 is a bottom view of a surface-mount type crystal resonator showing Modification 4 of the embodiment of the present invention.
  • FIG. 8 is a bottom view of a surface-mount type crystal resonator showing Modification 5 of the embodiment of the present invention.
  • FIG. 9 is a bottom view of a surface-mount type crystal resonator showing Modification 6 of the embodiment of the present invention.
  • crystal resonator a surface-mount type crystal resonator
  • the crystal resonator according to the present embodiment is used in an in-vehicle electronic device that is used in a harsh environment of high and low temperatures.
  • the crystal resonator is used in an electronic device that plays a main part such as an ECU (Engine Control Unit). It is done.
  • ECU Engine Control Unit
  • the crystal resonator according to the embodiment of the present invention holds a crystal diaphragm 3 that is an electronic component element, and a crystal diaphragm 3 that has a recess that is open at the top. It consists of a base 1 that is to be stored (stored) and a lid 2 that hermetically seals the crystal diaphragm 3 that is joined to the opening of the base 1 and held on the base 1.
  • the base 1 is a rectangular parallelepiped as a whole, and has a structure in which a ceramic such as alumina and a conductive material such as tungsten or molybdenum are appropriately laminated. As shown in FIGS. 2 and 3, the base 1 includes a storage portion 10 having a concave shape in cross section, and a bank portion 11 provided around the storage portion 10 so as to surround the storage portion 10. Specifically, the base 1 is a rectangular (planar view rectangular) flat plate-shaped ceramic base base 1a, and a ceramic having a large central portion and an outer size (planar view outer size) substantially equal to the base base 1a.
  • the base body 1a, the frame body 1b, and the sealing member 11a are integrally fired.
  • the top surface of the bank portion 11 (frame body 1b) is flat, and a sealing member 11a (a sealing material, a metal layer, or the like) is formed on the bank portion 11.
  • a sealing member 11a a sealing material, a metal layer, or the like
  • the material of the sealing member 11a is arbitrarily set depending on the material of the base 1 and the lid 2, and It is not limited.
  • the sealing member 11a has a structure in which a nickel plating layer and a gold plating layer are formed on the upper surface of a metallized layer made of tungsten, molybdenum, or the like. It is good also as a structure formed.
  • the bottom surface of the base 1 has a rectangular shape in plan view, and a pair of plan views that are joined to the external circuit board 4 (see FIG. 2) using the conductive bonding material D along the pair of long sides of the bottom surface of the base 1.
  • Rectangular terminal electrodes 12 and 13 are respectively formed.
  • the pair of terminal electrodes 12 and 13 are configured symmetrically with each other as shown in FIG. Specifically, it is symmetrical with respect to a parallel line PP along the long side along the long side of the bottom surface of the base 1 passing through the center point O of the bottom surface of the base 1 shown in FIG. .
  • the long sides of the terminal electrodes 12 and 13 are formed close to the long side end of the bottom surface of the base 1, and the long sides of the terminal electrodes 12 and 13 and the long sides of the bottom surface of the base 1 are arranged in parallel. Has been. Due to the configuration of the terminal electrodes 12 and 13 formed on the bottom surface of the base 1, even if a thermal expansion coefficient difference occurs between the base 1 and the circuit board 4, the bottom surface of the base 1 is less affected by the stress. It can be uniformly dispersed in the side direction.
  • the long side dimension L2 of each terminal electrode 12, 13 is configured to exceed half of the long side dimension L1 of the bottom surface of the base 1. Regardless of the position of each of the terminal electrodes 12 and 13 on the long side of the bottom surface of the base 1, the area facing the short side direction of the bottom surface of the base 1 is more reliably secured near the center of the long side of the bottom surface of the base 1. can do. In particular, it is more preferable that the ratio of the long side dimension L2 of each terminal electrode 12, 13 to the long side dimension L1 of the bottom surface of the base 1 is 70% or more.
  • the long side dimension of the terminal electrodes 12 and 13 is 2.3 mm with respect to the long side dimension 2.5 mm of the bottom surface of the base 1, and the ratio is 92%.
  • the long side dimension L2 of each terminal electrode 12, 13 is smaller than the long side dimension L1 of the bottom surface of the base 1. According to this embodiment, compared with the form in which the long side dimension L2 of each terminal electrode 12, 13 and the long side dimension L1 of the bottom surface of the base 1 are the same dimension, the joining accompanying the fillet formation of the conductive joining material D It is preferable for eliminating variation.
  • the dimension H3 is formed to be the same (including substantially the same as can be conceived by those skilled in the art), and the dimension of the short side of the bottom surface of the base 1 is divided into three equal parts.
  • the terminal electrodes 12 and 13 are electrode pads 122 and 132 formed on the bottom surface inside the base 1 via side terminal electrodes 121 and 131 formed on the castellations C5 and C6. (The electrode pad 132 is not shown) and is electrically connected.
  • terminal electrodes 12 and 13 side terminal electrodes 121 and 131, and electrode pads 122 and 132 are formed by metallizing a metallized material such as tungsten or molybdenum integrally with the base 1, and nickel plating is formed on the upper part. It is formed, and gold plating is formed on the upper part.
  • a metallized material such as tungsten or molybdenum integrally with the base 1
  • nickel plating is formed on the upper part. It is formed, and gold plating is formed on the upper part.
  • Bumps 12B and 13B having substantially the same shape (similar shape in plan view) having concentric and slightly smaller flat areas than the terminal electrodes 12 and 13 are formed on the upper portions of the terminal electrodes 12 and 13, respectively.
  • the bumps 12B and 13B are integrally formed by laminating the same material metallization (tungsten, molybdenum, etc.) in the same shape on the metallization upper portions of the terminal electrodes 12 and 13. Therefore, the bumps 12B and 13B can be formed very easily and inexpensively.
  • the terminal electrodes 12 and 13 and the bumps 12B and 13B are formed by firing these metallized materials integrally with the base 1, forming nickel plating on the metallized upper part, and forming gold plating on the upper part. .
  • the long side dimension L3 of the bumps 12B, 13B of the terminal electrodes 12, 13 is 90% or more with respect to the long side dimension L2 of the terminal electrodes 12, 13.
  • the width dimensions W1 to W4 from the end portions of the terminal electrodes 12 and 13 to the end portions of the bumps 12B and 13B are configured to be within a range of 0.01 to 0.5 mm.
  • the long side dimension of the terminal electrodes 12 and 13 is 2.3 mm
  • the long side dimension of the bumps 12B and 13B is 2.1 mm
  • the long side dimension L2 of each terminal electrode 12 and 13 is set.
  • the ratio of the long side dimension L3 of the bumps 12B and 13B is about 91%.
  • the width dimensions W1 to W4 are about 0.1 mm.
  • the bumps 12B and 13B that are concentric with the terminal electrodes 12 and 13 and have substantially the same shape (similar shape in plan view) are formed on the terminal electrodes 12 and 13 in any plane direction of the terminal electrodes 12 and 13.
  • the progress of the crack can be delayed with respect to the generated crack.
  • bumps 12B and 13B by configuring the bumps 12B and 13B with the above-described dimensional ratio and width, bumps 12B and 13B having a slightly smaller planar area than the terminal electrodes 12 and 13 and having substantially the same shape (similar shape in plan view) can be obtained.
  • the progress of the crack can be remarkably suppressed as compared with the case where the bumps 12B and 13B are not formed on the terminal electrodes 12 and 13.
  • the terminal electrodes 12 and 13 can be further prevented from functioning as electronic components due to the open state while further improving the electromechanical connectivity of the terminal electrodes 12 and 13. Become.
  • the crystal diaphragm 3 (electronic component element referred to in the present invention) is mounted on the electrode pads 122 and 132.
  • a pair of excitation electrodes and extraction electrodes (not shown) are formed on the front and back surfaces of the crystal diaphragm 3.
  • the pair of excitation electrodes and extraction electrodes are provided on the front and back surfaces of the quartz diaphragm 3 (from the top of the quartz diaphragm 3) in the order of chromium, gold, chromium, gold, chromium, chromium, silver, chromium, or chromium, for example. , And are laminated in the order of silver.
  • Each of these electrodes can be formed by a thin film forming means such as a vacuum evaporation method or a sputtering method.
  • the extraction electrode of the crystal diaphragm 3 is conductively bonded to the electrode pads 122 and 132 by a conductive bonding material (not shown), and the crystal diaphragm 3 is held on the base 1.
  • a conductive bonding material such as a conductive resin adhesive, a metal bump, a metal plating bump, or a brazing material is used for conductive bonding between the excitation electrode of the crystal diaphragm 3 and the electrode pads 122 and 132 of the base 1. Can do.
  • a lid 2 that hermetically seals the base 1 uses a ceramic material such as a plate-like alumina formed with a sealing member 11 a such as a glass sealing material.
  • the plan view outline of the lid 2 is substantially the same as or slightly smaller than the plan view outline of the base 1.
  • the lid 2 is not limited to a ceramic material but may be a glass material or a metal material.
  • the crystal diaphragm 3 is stored in the storage portion 10 of the base 1 having the above-described configuration (specifically, the crystal diaphragm 3 is mounted on the electrode pads 122 and 132), and the crystal diaphragm 3 is covered with the lid 2. Then, the crystal resonator plate (electronic component package) is completed by hermetically sealing the crystal diaphragm 3 by a technique such as fusion bonding in a heating furnace. Note that the method of hermetically sealing the quartz crystal diaphragm 3 by the base 1 and the lid 2 is not limited to fusion bonding, and welding bonding, brazing, etc. depending on various materials (base, lid, sealing member, etc.) Other approaches can be used. Further, as shown in FIG. 2, the completed crystal resonator is bonded to the upper part of the electrode patterns 41 and 42 of the circuit board 4 made of glass epoxy material via a conductive bonding material D such as solder. .
  • FIG. 4 shows a modification of the present embodiment as a first modification.
  • the modification 1 differs from the present embodiment in the relationship between the terminal electrodes 12 and 13 and the width of the gap region, and the extension configuration of the terminal electrodes 12 and 13, and the other parts are the same. The configuration is adopted. Only differences from the present embodiment will be described below.
  • the width dimension H1 in the short side direction of the terminal electrode 12 and the width dimension H2 in the short side direction of the terminal electrode 13 are the same width dimension, and the width dimension H3 of the gap region between the terminal electrodes 12 and 13 is set. Is smaller than H1 and H2. Thereby, even if a thermal expansion coefficient difference arises between the base 1 and the circuit board 4, the influence can be further reduced.
  • the castellations C1, C2, C3, and C4 are formed at the corners K1, K2, K3, and K4 of the base 1, and the castellations C5 and C6 are not formed on the long side of the base 1. Therefore, the terminal electrodes 12 and 13 are routed to the castellations C1, C2, C3 and C4, and the base electrodes are formed via the side terminal electrodes 121, 131, 123 and 133 formed on the castellations C1, C2, C3 and C4. 1 is extended to electrode pads 122 and 132 (not shown) formed on the bottom surface inside 1, and is electrically connected to the electrode pads 122 and 132. With this configuration, the strength of the base 1 can be improved, and the electrical extension of the terminal electrodes 12 and 13 becomes more reliable.
  • FIG. 5 shows a modification of the present embodiment as a second modification.
  • the arrangement of the terminal electrodes 12 and 13 on the bottom surface of the base 1 is different, and the terminal electrodes 12 and 13 are formed to be offset from the K1 and K3, respectively. Is symmetrical with respect to the diagonal positions (K1 and K3).
  • the dimension ratio of the long side dimension L2 of each terminal electrode 12, 13 to the long side dimension L1 of the bottom surface of the base 1 is 76%.
  • the long side dimension of the bottom surface of the base 1 is set to 2.5 mm, and the long side dimension of the terminal electrodes 12 and 13 is set to 1.9 mm.
  • the width dimension H1 of the terminal electrode 12 in the short side direction, the width dimension H2 of the terminal electrode 13 in the short side direction, and the width dimension H3 of the gap region between these terminal electrodes are the same. Including substantially the same that can be conceived by a contractor).
  • the castellations C1, C2, C3, and C4 are formed on the corners K1, K2, K3, and K4 of the base 1, respectively, and the castellations C5 and C6 are not formed on the long side of the base 1.
  • the terminal electrodes 12 and 13 are routed around the castellations C1 and C3, and electrode pads 122 (not shown) formed on the bottom surface inside the base 1 via the side terminal electrodes 121 and 131 formed on the castellations C1 and C3. , 132 and are electrically connected to the electrode pads 122, 132.
  • the second modification even if a thermal expansion coefficient difference occurs between the base 1 and the circuit board 4, at the center point O of the bottom surface of the base 1 in the short side direction of the bottom surface of the base 1 with little influence of the stress. It can be uniformly dispersed so as to rotate. Also, the strength of the base 1 can be improved.
  • FIG. 6 shows a modification of the present embodiment as a third modification.
  • Modification 3 differs from the present embodiment in the shape of the terminal electrodes 12 and 13 on the bottom surface of the base 1, and other parts adopt the same configuration. Only differences from the present embodiment will be described below.
  • the arrangement of the terminal electrodes 12 and 13 on the bottom surface of the base 1 is different, and the terminal electrodes 12 and 13 are formed to be offset from the K1 and K3, respectively. Is symmetrical with respect to the diagonal positions (K1 and K3).
  • Each terminal electrode 12, 13 is not only formed along the long side of the bottom surface of the base 1, but is further formed along the short side of the bottom surface of the base 1, and is L-shaped on the bottom surface of the base 1. It is molded into. Also in this modified example 3, the terminal electrodes 12 and 13 have a pair of relations and are configured symmetrically with each other.
  • the terminal electrode 12 extends along the long side direction of the bottom surface of the base 1 in a state where the corner K1 is a bending point (base) and is close to or in contact with the end of the long side of the bottom surface of the base 1. It is formed and formed along the short side direction of the bottom surface of the base 1 so as to be close to or in contact with the end portion of the short side of the bottom surface of the base 1 and is formed in an L shape.
  • the terminal electrode 13 is formed along the long side direction of the bottom surface of the base 1 with the corner K3 as a bending point (base) and in proximity to or in contact with the end of the long side of the bottom surface of the base 1. And it forms along the short side direction of the bottom face of the base 1 in the state which adjoined or touched the edge part of the short side of the bottom face of the base 1, and is shape
  • the base is placed in the short side direction of the bottom surface of the base 1 that is less affected by the stress.
  • the base 1 can be uniformly dispersed so as to rotate at the center point O of the bottom surface, and the strength of the base 1 can be improved.
  • the terminal electrodes 12 and 13 are merely formed along the long side direction of the bottom surface of the base 1 in a state of being close to or in contact with the end portion of the long side of the bottom surface of the base 1. Furthermore, since it is formed along the short side direction of the bottom surface of the base 1 in a state of being close to or in contact with the end portion of the short side of the bottom surface of the base 1, it is possible to disperse the stress as compared with the second modification. Moreover, it is also suitable for improving the strength of the base 1.
  • FIG. 7 shows a modification of the present embodiment as a modification 4.
  • the modification 4 differs from the present embodiment in the shape of the terminal electrodes 12 and 13 on the bottom surface of the base 1, and other parts adopt the same configuration. Only differences from the present embodiment will be described below.
  • the terminal electrodes 12 and 13 are each divided. Further, side terminal electrodes 121 and 131 are formed on the castellations C1 and C3. Also in this modified example 4, the terminal electrodes 12 and 13 have a pair of relations and are configured to be symmetrical to each other.
  • the terminal electrode 12 is composed of two electrodes, the right electrode shown in FIG. 7 is routed to the castellation C5, and the left electrode shown in FIG. 7 is routed to the castellation C1.
  • the electrode pads 122 (see FIG. 2) formed on the inner bottom surface of the base 1 are extended and electrically connected via the respective side terminal electrodes 121.
  • the two electrodes of the terminal electrode 12 are electrically connected.
  • the two electrodes of the terminal electrode 12 are formed with bumps 12B in which the two electrodes are similarly reduced.
  • the terminal electrode 13 is composed of two electrodes.
  • the left electrode shown in FIG. 7 is routed to the castellation C6, and the right electrode shown in FIG. 7 is routed to the castellation C3. It extends and is electrically connected to an electrode pad 132 (not shown) formed on the bottom surface inside the base 1 via the side terminal electrode 131.
  • the two electrodes of the terminal electrode 13 are electrically connected.
  • the two electrodes of the terminal electrode 13 are formed with bumps 13B in which the two electrodes are similarly reduced.
  • the crystal resonator (base 1) according to the modified example 4 is bonded to the circuit board 4 via the conductive bonding material D (see FIG. 2)
  • the two electrodes of the terminal electrode 12 are connected to the conductive bonding material D.
  • the conductive bonding material D is bonded across the two electrodes of the terminal electrode 12.
  • the two electrodes of the terminal electrode 13 are bonded to the circuit board 4 via the conductive bonding material D.
  • the conductive bonding material D is bonded across the two electrodes of the terminal electrode 13.
  • the terminal electrodes 12 and 13 are each composed of two electrodes. Therefore, the dimension corresponding to the long side dimension L2 of each terminal electrode 12 and 13 shown in FIG. 1 etc. is a dimension obtained by adding the long side dimensions L21 and L22 of the two electrodes of each terminal electrode 12 and 13, respectively. Similarly, the dimension corresponding to the long side dimension L3 of the bumps 12B and 13B is a dimension obtained by adding the long side dimensions L31 and L32 of the bumps 12B and 13B.
  • each terminal electrode 12 and 13 is divided
  • one of the two electrodes of the terminal electrodes 12 and 13 of Modification 4 shown in FIG. 7 may be a dummy electrode.
  • the side surface terminal electrodes 121 and 131 need not be formed on the castellations C1 and C3.
  • the terminal electrodes 12 and 13 have a pair of relations and are configured symmetrically with each other.
  • the terminal electrode 12 and the long side direction of the base 1 are aligned.
  • a dummy electrode formed adjacent to the terminal electrode 12 may be bonded to the circuit board 4 via the conductive bonding material D.
  • the conductive bonding material D is bonded across the terminal electrode 12 and the dummy electrode.
  • the terminal electrode 13 and a dummy electrode formed adjacent to the terminal electrode 13 along the long side direction of the base 1 may be bonded to the circuit board 4 via the conductive bonding material D.
  • the conductive bonding material D is bonded across the terminal electrode 13 and the dummy electrode.
  • the terminal electrodes 12 and 13 are each composed of two electrodes. Therefore, the dimension corresponding to the long side dimension L2 of each terminal electrode 12 and 13 shown in FIG. 1 etc. is a dimension obtained by adding the long side dimensions L21 and L22 of the two electrodes of each terminal electrode 12 and 13, respectively. Similarly, the dimension corresponding to the long side dimension L3 of the bumps 12B and 13B is a dimension obtained by adding the long side dimensions L31 and L32 of the bumps 12B and 13B.
  • each of the terminal electrodes 12 and 13 is divided into two electrodes is not limited to the fifth modification shown in FIG. 7, but may be the sixth modification shown in FIG.
  • two castellations C51, C52, C61, C62 are formed at equal intervals on each of the opposing long sides of the base 1.
  • the divided terminal electrodes 12 and 13 are individually routed around the castellations C51, C52, C61, and C62. Even in this modified example 6, the terminal electrodes 12 and 13 have a pair of relations and are configured symmetrically with each other.
  • the crystal resonator (base 1) according to the modified example 6 is bonded to the circuit board 4 via the conductive bonding material D (see FIG. 2)
  • the two electrodes of the terminal electrode 12 are connected to the conductive bonding material D. It is joined to the circuit board 4 via Thus, the conductive bonding material D is bonded across the two electrodes of the terminal electrode 12.
  • the two electrodes of the terminal electrode 13 are bonded to the circuit board 4 via the conductive bonding material D.
  • the conductive bonding material D is bonded across the two electrodes of the terminal electrode 13.
  • the terminal electrodes 12 and 13 are each composed of two electrodes. Therefore, the dimension corresponding to the long side dimension L2 of each terminal electrode 12 and 13 shown in FIG. 1 etc. is a dimension obtained by adding the long side dimensions L21 and L22 of the two electrodes of each terminal electrode 12 and 13, respectively. Similarly, the dimension corresponding to the long side dimension L3 of the bumps 12B and 13B is a dimension obtained by adding the long side dimensions L31 and L32 of the bumps 12B and 13B.
  • the terminal electrodes 12 and 13 are configured symmetrically with each other, the long sides of the terminal electrodes 12 and 13 are formed close to or in contact with the long side end of the bottom surface of the base 1, and the terminal electrodes 12 and 13 The long side and the long side of the bottom surface of the base 1 are arranged in parallel, and each terminal electrode long side 12, 13 has a dimension that exceeds half of the long side of the bottom surface of the base 1.
  • the terminal electrodes 12 and 13 are formed at any position on the long side of the bottom surface of the base 1, the terminal electrodes 12 and 13 are opposed in the short side direction of the bottom surface of the base 1 near the center of the long side of the base 1.
  • a region to be secured is secured, and a joining region by the conductive joining material D in this region is secured.
  • the effect of stress strain generated from the outer peripheral edge of the bottom surface of the base 1 toward the vicinity of the center of the bottom surface of the base 1 can be reduced with respect to this joining region. It is also possible to suppress the occurrence of stress strain that occurs toward the outer peripheral edge of the bottom surface of the plate.
  • the terminal electrodes 12 and 13 are configured to be symmetrical with each other, and the long sides of the terminal electrodes 12 and 13 are close to the long-side end of the bottom surface of the base 1 or
  • the long side of the terminal electrode and the long side of the bottom surface of the base 1 are arranged in parallel, and the dimension of each terminal electrode long side exceeds the half of the long side of the bottom surface of the base 1 Has been. Therefore, the terminal electrodes 12 and 13 having a long shape exceeding the half of the long side of the bottom surface of the base 1 are formed along the long side direction of the bottom surface of the base 1 that is greatly affected by the difference in thermal expansion coefficient.
  • the conductive bonding material D is applied in a single line along the long side direction of the bottom surface of 1. For this reason, generation
  • the occurrence location of cracks can be one, and even if a crack occurs, there is no occurrence of cracks from a plurality of directions starting from a plurality of locations, and the terminal electrodes 12 and 13 are connected to the circuit board 4. It is possible to prevent the electronic component from functioning as an open state.
  • the bumps 12B and 13B having a smaller area than the terminal electrodes 12 and 13 are formed on the upper portions of the terminal electrodes 12 and 13 in an integrated manner, so that a crack in the conductive bonding material D is generated first. It is possible to shift the position where the crack advances near the end in the long side direction of the terminal electrodes 12 and 13 and the position where the crack advances near the center in the long side direction.
  • the cracks that first attempt to advance substantially parallel to the bottom surface positions of the terminal electrodes 12 and 13 are affected by the ends of the bumps 12B and 13B adjacent to the ends of the terminal electrodes 12 and 13, and The angle is changed in the direction of the circuit board 4 which is not parallel. That is, the crack bends in the middle.
  • the terminal electrodes 12 and 13 and the bumps 12B and 13B are formed concentrically and in a similar shape, and the length of the long side of the bump is 90% or more with respect to the long side of the terminal electrodes 12 and 13,
  • the crack progress angle can be changed to provide a crack bending point, and the progress of the crack can be remarkably suppressed.
  • the long sides of the terminal electrodes 12 and 13 are disclosed to be formed close to the long side end of the bottom surface of the base 1. It may be formed in contact with the long side end of the bottom surface.
  • the surface mount type crystal resonator is taken as an example, but the present invention can also be applied to other surface mount type electronic component packages used in electronic devices such as crystal filters and crystal oscillators.
  • a ceramic material is disclosed as an insulating package (base), a glass material or crystal may be used.
  • metallization is disclosed as the metal film of the terminal electrode, a plating material may be used.
  • the terminal electrodes 12 and 13 when the dimensions of the long sides of the terminal electrodes 12 and 13 are different from those of the above-described embodiment and Modifications 1 to 6, the terminal electrodes 12 and 13 May be formed at a position other than the vicinity of the center of the long side of the bottom surface of the base 1. In this case, it is difficult to secure a region facing the bottom side of the base 1 in the short side direction, the influence of stress strain as described above cannot be reduced, and the occurrence of stress strain cannot be suppressed.
  • the present invention can be applied to a package for an electronic component such as a crystal resonator, and a base for an electronic component package.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
PCT/JP2011/055738 2010-03-24 2011-03-11 電子部品用パッケージのベース、電子部品用パッケージ WO2011118415A1 (ja)

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US13/392,540 US8836095B2 (en) 2010-03-24 2011-03-11 Electronic component package and base of the same
CN201180005694.2A CN102714187B (zh) 2010-03-24 2011-03-11 电子部件用封装的基座和电子部件用封装
JP2012506938A JP5757287B2 (ja) 2010-03-24 2011-03-11 電子部品用パッケージのベース、電子部品用パッケージ

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JP5806547B2 (ja) * 2011-08-05 2015-11-10 日本電波工業株式会社 圧電デバイス及び圧電デバイスの製造方法
JP6056259B2 (ja) * 2012-08-18 2017-01-11 セイコーエプソン株式会社 電子部品の製造方法、電子デバイスの製造方法
JP6167494B2 (ja) * 2012-09-26 2017-07-26 セイコーエプソン株式会社 電子デバイス用容器の製造方法、電子デバイスの製造方法、電子デバイス、電子機器及び移動体機器
JP6294020B2 (ja) * 2013-07-16 2018-03-14 セイコーインスツル株式会社 蓋体部、この蓋体部を用いた電子デバイス用パッケージ及び電子デバイス
JP2015056501A (ja) * 2013-09-11 2015-03-23 セイコーエプソン株式会社 回路基板、回路基板の製造方法、電子デバイス、電子機器および移動体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177695A (ja) * 1992-10-08 1994-06-24 Murata Mfg Co Ltd チップ型圧電部品
JPH11261365A (ja) * 1998-03-10 1999-09-24 Toyo Commun Equip Co Ltd 圧電振動子のパッケージ構造
JP2004254251A (ja) * 2003-02-21 2004-09-09 Toyo Commun Equip Co Ltd 表面実装型圧電振動子及び絶縁性パッケージ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229404B1 (en) * 1998-08-31 2001-05-08 Kyocera Corporation Crystal oscillator
JP3918794B2 (ja) * 2002-12-10 2007-05-23 セイコーエプソン株式会社 圧電発振器およびその製造方法並びに電子機器
JP4222020B2 (ja) * 2002-12-17 2009-02-12 セイコーエプソン株式会社 圧電発振器
US7098580B2 (en) * 2004-01-29 2006-08-29 Kyocera Corporation Piezoelectric oscillator
JP4692722B2 (ja) * 2004-01-29 2011-06-01 セイコーエプソン株式会社 電子部品用パッケージおよび電子部品
US7427822B2 (en) * 2004-05-12 2008-09-23 Daishinku Corporation Piezoelectric resonator element package, and piezoelectric resonator
US7928635B2 (en) * 2008-01-07 2011-04-19 Epson Toyocom Corporation Package for electronic component and piezoelectric resonator
CN201207392Y (zh) * 2008-04-28 2009-03-11 华泰电子股份有限公司 电子系统封装结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177695A (ja) * 1992-10-08 1994-06-24 Murata Mfg Co Ltd チップ型圧電部品
JPH11261365A (ja) * 1998-03-10 1999-09-24 Toyo Commun Equip Co Ltd 圧電振動子のパッケージ構造
JP2004254251A (ja) * 2003-02-21 2004-09-09 Toyo Commun Equip Co Ltd 表面実装型圧電振動子及び絶縁性パッケージ

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CN102714187B (zh) 2016-01-27
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JPWO2011118415A1 (ja) 2013-07-04
US8836095B2 (en) 2014-09-16

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