WO2011095560A3 - Verfahren und vorrichtung zur wärmebehandlung des scheibenförmigen grundmaterials einer solarzelle - Google Patents
Verfahren und vorrichtung zur wärmebehandlung des scheibenförmigen grundmaterials einer solarzelle Download PDFInfo
- Publication number
- WO2011095560A3 WO2011095560A3 PCT/EP2011/051596 EP2011051596W WO2011095560A3 WO 2011095560 A3 WO2011095560 A3 WO 2011095560A3 EP 2011051596 W EP2011051596 W EP 2011051596W WO 2011095560 A3 WO2011095560 A3 WO 2011095560A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- wafer
- base material
- shaped base
- heat treating
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020127020486A KR20120120283A (ko) | 2010-02-03 | 2011-02-03 | 태양 전지의 웨이퍼형 기본 재료의 열처리 방법 및 장치 |
US13/576,464 US20130119030A1 (en) | 2010-02-03 | 2011-02-03 | Method and apparatus for heat treating the wafer-shaped base material of a solar cell, in particular a crystalline or polycrystalline silicon solar cell |
CN2011800133065A CN102859676A (zh) | 2010-02-03 | 2011-02-03 | 用于对太阳能电池的片状基本材料进行热处理的方法和装置 |
JP2012551625A JP2013519224A (ja) | 2010-02-03 | 2011-02-03 | 太陽電池セル、特に結晶または多結晶シリコン太陽電池セルのディスク状基板材料を熱処理するための方法および装置 |
DE112011100422T DE112011100422A5 (de) | 2010-02-03 | 2011-02-03 | Verfahren und Vorrichtung zur Wärmebehandlung des scheibenförmigen Grundmaterials einer Solarzelle, insbesondere einer kristallinen oder polykristallinen Silizium-Solarzelle |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010006654.0 | 2010-02-03 | ||
DE102010006654 | 2010-02-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011095560A2 WO2011095560A2 (de) | 2011-08-11 |
WO2011095560A3 true WO2011095560A3 (de) | 2012-06-21 |
Family
ID=44355862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/051596 WO2011095560A2 (de) | 2010-02-03 | 2011-02-03 | Verfahren und vorrichtung zur wärmebehandlung des scheibenförmigen grundmaterials einer solarzelle, insbesondere einer kristallinen oder polykristallinen silizium-solarzelle |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130119030A1 (de) |
JP (1) | JP2013519224A (de) |
KR (1) | KR20120120283A (de) |
CN (1) | CN102859676A (de) |
DE (1) | DE112011100422A5 (de) |
WO (1) | WO2011095560A2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101902887B1 (ko) * | 2011-12-23 | 2018-10-01 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
DE102013103422B4 (de) * | 2013-04-05 | 2022-01-05 | Focuslight Technologies Inc. | Vorrichtung zur Erzeugung von Laserstrahlung mit einer linienförmigen Intensitätsverteilung |
JP2017510087A (ja) * | 2013-12-20 | 2017-04-06 | ゼノン・コーポレイションXenon Corporation | 連続フラッシュランプシンタリング |
WO2015174347A1 (ja) * | 2014-05-12 | 2015-11-19 | 株式会社日本製鋼所 | レーザアニール装置、レーザアニール処理用連続搬送路、レーザ光照射手段およびレーザアニール処理方法 |
KR102591880B1 (ko) * | 2015-12-18 | 2023-10-24 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지의 제조 방법 |
JP6430468B2 (ja) | 2015-12-18 | 2018-11-28 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180871B1 (en) * | 1999-06-29 | 2001-01-30 | Xoptix, Inc. | Transparent solar cell and method of fabrication |
WO2001018855A1 (en) * | 1999-09-03 | 2001-03-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
US6927109B1 (en) * | 1999-07-05 | 2005-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device |
WO2008104346A2 (en) * | 2007-02-27 | 2008-09-04 | Carl Zeiss Laser Optics Gmbh | Continuous coating installation and methods for producing crystalline thin films and solar cells |
WO2009035421A1 (en) * | 2007-09-14 | 2009-03-19 | Laserresearch (S) Pte Ltd | Single laser system for manufacture of thin film solar cell |
EP2058842A2 (de) * | 2007-11-08 | 2009-05-13 | Applied Materials, Inc. | Impulsfolgentemperverfahren und -vorrichtung |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5956775A (ja) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | 太陽電池の製造方法 |
JPS63170976A (ja) * | 1987-01-09 | 1988-07-14 | Fujitsu Ltd | a−Si光ダイオ−ドの製造方法 |
US5529951A (en) * | 1993-11-02 | 1996-06-25 | Sony Corporation | Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation |
JPH10189450A (ja) * | 1996-12-27 | 1998-07-21 | Sony Corp | 半導体装置の製造方法 |
US6217972B1 (en) * | 1997-10-17 | 2001-04-17 | Tessera, Inc. | Enhancements in framed sheet processing |
TW494444B (en) * | 1999-08-18 | 2002-07-11 | Semiconductor Energy Lab | Laser apparatus and laser annealing method |
JP2002231628A (ja) * | 2001-02-01 | 2002-08-16 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
US7390689B2 (en) * | 2001-05-25 | 2008-06-24 | President And Fellows Of Harvard College | Systems and methods for light absorption and field emission using microstructured silicon |
JP2006237042A (ja) * | 2005-02-22 | 2006-09-07 | Seiko Epson Corp | レーザーアニール装置、これを用いた半導体薄膜の製造方法、および薄膜トランジスター |
JP2006310792A (ja) * | 2005-03-29 | 2006-11-09 | Kyocera Corp | 加熱炉及びこれを用いた太陽電池素子の製造方法 |
JP2007208174A (ja) * | 2006-02-06 | 2007-08-16 | Fujifilm Corp | レーザアニール技術、半導体膜、半導体装置、及び電気光学装置 |
US20100143744A1 (en) * | 2007-03-09 | 2010-06-10 | University Of Virginia Patent Foundation | Systems and Methods of Laser Texturing of Material Surfaces and their Applications |
US7800081B2 (en) * | 2007-11-08 | 2010-09-21 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
-
2011
- 2011-02-03 WO PCT/EP2011/051596 patent/WO2011095560A2/de active Application Filing
- 2011-02-03 CN CN2011800133065A patent/CN102859676A/zh active Pending
- 2011-02-03 US US13/576,464 patent/US20130119030A1/en not_active Abandoned
- 2011-02-03 DE DE112011100422T patent/DE112011100422A5/de not_active Withdrawn
- 2011-02-03 JP JP2012551625A patent/JP2013519224A/ja active Pending
- 2011-02-03 KR KR1020127020486A patent/KR20120120283A/ko not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180871B1 (en) * | 1999-06-29 | 2001-01-30 | Xoptix, Inc. | Transparent solar cell and method of fabrication |
US6927109B1 (en) * | 1999-07-05 | 2005-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device |
WO2001018855A1 (en) * | 1999-09-03 | 2001-03-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
WO2008104346A2 (en) * | 2007-02-27 | 2008-09-04 | Carl Zeiss Laser Optics Gmbh | Continuous coating installation and methods for producing crystalline thin films and solar cells |
WO2009035421A1 (en) * | 2007-09-14 | 2009-03-19 | Laserresearch (S) Pte Ltd | Single laser system for manufacture of thin film solar cell |
EP2058842A2 (de) * | 2007-11-08 | 2009-05-13 | Applied Materials, Inc. | Impulsfolgentemperverfahren und -vorrichtung |
Also Published As
Publication number | Publication date |
---|---|
CN102859676A (zh) | 2013-01-02 |
WO2011095560A2 (de) | 2011-08-11 |
JP2013519224A (ja) | 2013-05-23 |
DE112011100422A5 (de) | 2012-11-29 |
KR20120120283A (ko) | 2012-11-01 |
US20130119030A1 (en) | 2013-05-16 |
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