WO2011078537A3 - 유기태양전지의 ｐ형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지 - Google Patents

유기태양전지의 ｐ형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지 Download PDF

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WO2011078537A3
WO2011078537A3 PCT/KR2010/009118 KR2010009118W WO2011078537A3 WO 2011078537 A3 WO2011078537 A3 WO 2011078537A3 KR 2010009118 W KR2010009118 W KR 2010009118W WO 2011078537 A3 WO2011078537 A3 WO 2011078537A3
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WIPO (PCT)
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solar cell
organic solar
membrane
type conductive
oxide
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PCT/KR2010/009118
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English (en)
French (fr)
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WO2011078537A2 (ko
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임동찬
이규환
정용수
강재욱
박선영
박미영
김영태
심원현
최강호
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한국기계연구원
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Priority to US13/518,328 priority Critical patent/US20120255616A1/en
Publication of WO2011078537A2 publication Critical patent/WO2011078537A2/ko
Publication of WO2011078537A3 publication Critical patent/WO2011078537A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 유기태양전지의 P형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지에 관한 것으로, 더욱 상세하게는 단일벽 탄소나노튜브를 유기용매에 분산시킨 후 금속산화물을 첨가하여 분산시켜 복합용액을 제조한 후 기판에 증착시켜 제조되는, 유기태양전지의 P형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 단일벽 탄소나노튜브를 유기용매에 분산시키는 단계(단계 1); 상기 단계 1에서 제조된 혼합용액에 금속산화물을 첨가하고 분산시켜 복합용액을 제조하는 단계(단계 2); 및 상기 단계 2에서 제조된 복합용액을 기판에 증착시키는 단계(단계 3)를 포함하는 유기태양전지의 P형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막의 제조방법 및 기판/전극/광활성층/P형 전도막/전극의 순서로 적층되는 유기태양전지에 있어서, 상기 P형 전도막은 단일벽 탄소나노튜브를 유기용매에 분산시킨 후 금속산화물을 첨가하여 분산시켜 복합용액을 제조한 후 기판에 증착시켜 제조되는 금속산화물-탄소나노튜브 복합막인 것을 특징으로 하는 광전변환효율이 향상된 유기태양전지에 관한 것이다.
PCT/KR2010/009118 2009-12-24 2010-12-20 유기태양전지의 ｐ형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지 WO2011078537A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/518,328 US20120255616A1 (en) 2009-12-24 2010-12-20 Metal-oxide/carbon-nanotube composite membrane to be used as a p-type conductive membrane for an organic solar cell, method for preparing same, and organic solar cell having improved photovoltaic conversion efficiency using same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0131075 2009-12-24
KR1020090131075A KR101085101B1 (ko) 2009-12-24 2009-12-24 유기태양전지의 ｐ형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지

Publications (2)

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WO2011078537A2 WO2011078537A2 (ko) 2011-06-30
WO2011078537A3 true WO2011078537A3 (ko) 2011-11-03

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PCT/KR2010/009118 WO2011078537A2 (ko) 2009-12-24 2010-12-20 유기태양전지의 ｐ형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지

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US (1) US20120255616A1 (ko)
KR (1) KR101085101B1 (ko)
WO (1) WO2011078537A2 (ko)

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KR101415822B1 (ko) * 2010-06-29 2014-07-09 코오롱인더스트리 주식회사 유기 태양 전지 및 이의 제조 방법
KR101131564B1 (ko) * 2010-10-27 2012-04-04 한국기계연구원 코어/쉘 금속산화물 나노입자를 이용한 효율적인 유기태양전지 및 이의 제조방법
US20130332120A1 (en) * 2012-06-06 2013-12-12 University Of Southern California System and method for aggregating reservoir connectivities
KR101679729B1 (ko) * 2015-03-13 2016-11-29 한국기계연구원 3차원 나노 리플 구조의 금속산화물 박막, 이의 제조방법 및 이를 포함하는 유기태양전지
KR102104713B1 (ko) * 2018-04-24 2020-04-24 인천대학교 산학협력단 고순도 반도체형 단일벽 탄소나노튜브와 큐빅형 인듐 산화물 기반의 이종접합 재료, 및 그 제조방법
JPWO2022181318A1 (ko) * 2021-02-24 2022-09-01

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US20120255616A1 (en) 2012-10-11
WO2011078537A2 (ko) 2011-06-30
KR20110074179A (ko) 2011-06-30
KR101085101B1 (ko) 2011-11-21

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