WO2011074756A1

WO2011074756A1 - Substrate processing method

Info

Publication number: WO2011074756A1
Application number: PCT/KR2010/004664
Authority: WO
Inventors: 홍성재; 한석만; 진주; 정진열
Original assignee: 엘아이지에이디피 주식회사
Priority date: 2009-12-14
Filing date: 2010-07-16
Publication date: 2011-06-23
Also published as: WO2011074754A1; CN102804412A; WO2011074755A1; CN102884642A; CN102804413A

Abstract

A substrate processing method is required in a process for forming a thin film on a substrate so as to improve the process efficiency and form a high quality thin film. To this end, the substrate processing method according to the present invention comprises: forming an undoped layer including a group-III element and a group-V element on a substrate in the first chamber by a vapor deposition process; carrying the substrate out of the first chamber to a buffer chamber then into the second chamber; and forming an n-type layer including a group-III element and a group-V element on a substrate in the second chamber by a vapor deposition process.

Description

Substrate Processing Method

The present invention relates to a substrate processing method, and more particularly, to a method for forming a thin film on a substrate.

In general, an LED (Light Emitting Diode) has a structure in which an n-type layer, an active layer, and a p-type layer are sequentially stacked. One such method for forming an n-type layer, an active layer, or a p-type layer is a metal organic chemical vapor deposition method (Metal Organic Chemical Vapor Deposition). The organometallic chemical vapor deposition method is a method of injecting a metal organic compound gas toward a heated substrate and causing a chemical reaction on the heated substrate surface to form a desired film on the surface of the substrate.

In the conventional organometallic chemical vapor deposition method, the steps of forming the n-type layer, the active layer, and the p-type layer are all performed in one reaction chamber. However, the problem with this method is that the deposition process takes too much time.

The cause of the problem is that the temperature and gas atmosphere required for each step of depositing the layers are different, so that the temperature must be raised or lowered to the required temperature, or each step must be stopped and waited while adjusting the gas atmosphere.

In the process of forming a thin film on a substrate, there is a need for a substrate processing method capable of improving process efficiency and forming a high quality thin film.

Technical problems of the present invention are not limited to the above-mentioned technical problems, and other technical problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

The substrate processing method according to the present invention for solving the above problems, the undoped comprising a group-III element and a group-V element on the substrate by a vapor deposition process in the first chamber Forming an undoped layer; Removing the substrate from the first chamber into the buffer chamber and then loading the substrate into the second chamber; And forming an n-type layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the second chamber. It includes.

In addition, the group-III element may include at least one of aluminum (Al), gallium (Ga), and indium (In).

In addition, the undoped layer may include an undoped GaN layer.

In addition, when the substrate is loaded into the second chamber, the internal temperature of the second chamber may be about 1000 to 1200 degrees Celsius.

In addition, the internal temperature of the buffer chamber may be about 600 ~ 900 degrees Celsius.

In addition, the internal gas atmosphere of the buffer chamber may be a hydrogen gas atmosphere.

The method may further include removing the substrate from the second chamber into the buffer chamber and then carrying the substrate into the third chamber; And forming an active layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the third chamber. Can be.

In addition, when the substrate is loaded into the third chamber, the internal temperature of the third chamber may be about 700 to 900 degrees Celsius.

The method may further include removing the substrate from the third chamber into the buffer chamber and then carrying the substrate into the fourth chamber; And forming a p-type layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the fourth chamber. It may further include.

In addition, an active layer including a group-III element and a group-V element on the substrate by vapor deposition in the second chamber after forming the n-type layer. forming a layer); Removing the substrate from the second chamber into the buffer chamber and then loading the substrate into a third chamber; And forming a p-type layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the third chamber. It may further include.

In addition, when the substrate is loaded into the third chamber, the internal temperature of the third chamber may be about 1000 to 1200 degrees Celsius.

In addition, a group-III element and a group-V element are included in the substrate by a vapor deposition process in the first chamber before the step of forming the undoped layer. The method may further include forming a buffer layer.

In addition, in the forming of the buffer layer, the internal temperature of the first chamber may be about 450 to 700 degrees Celsius.

In addition, the buffer layer may include at least one of AlN, GaN, and AlGaN.

The method may further include heat treating the substrate in a third chamber before forming the buffer layer; And removing the substrate from the third chamber to the buffer chamber and then carrying the substrate into the first chamber.

In addition, the heat treatment may include heating the substrate to about 1000 to 1200 degrees Celsius.

In addition, a group-III element and a group-V element are included on the substrate by a vapor deposition process in a third chamber before the step of forming the undoped layer. Forming a buffer layer; And carrying out the substrate from the third chamber to the buffer chamber and then carrying the substrate into the first chamber.

In addition, when the substrate is loaded into the first chamber, the internal temperature of the first chamber may be about 1000 to 1200 degrees Celsius.

The method may further include heat treating the substrate in a fourth chamber before forming the buffer layer; And removing the substrate from the fourth chamber to the buffer chamber and then carrying the substrate into the third chamber.

By controlling the internal temperature of each reaction chamber to a different temperature or gas atmosphere in advance, each process can be carried out immediately by bringing the substrate into each reaction chamber. therefore. The time required for temperature control or gas atmosphere control can be shortened. In addition, when the buffer chamber is previously adjusted to the temperature required for the next step of the process, the time required to adjust the temperature of the substrate in the reaction chamber in which the next step of the process will be carried out can be saved.

In addition, the buffer chamber can prevent the film quality deterioration due to a sudden temperature change. For example, when the substrate having been processed in the first reaction chamber is carried out to the buffer chamber, the temperature of the buffer chamber may be adjusted to be similar to the temperature of the first reaction chamber.

In addition, during the cleaning of the inside of the reaction chamber after any one process is completed, the process time can be shortened because the next process can be performed without interruption by bringing the substrate into another reaction chamber.

The technical effects of the present invention are not limited to the above-mentioned effects, and other technical effects not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a schematic plan view of a first embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.

FIG. 2 is a schematic cross-sectional view A-A 'of the chemical vapor deposition apparatus of FIG.

3 is a schematic plan view of a second embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.

4 is a schematic plan view of a third embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.

5 is a schematic plan view of a fourth embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.

6 is a schematic plan view of a fifth embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.

7 is a flowchart of a substrate processing method using a chemical vapor deposition apparatus including nine reaction chambers.

8 is a flowchart of a substrate processing method using a chemical vapor deposition apparatus including six reaction chambers.

9 is a flow chart of a substrate processing method using a chemical vapor deposition apparatus including three reaction chambers.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present embodiment is not limited to the embodiments disclosed below, but can be implemented in various forms, and only this embodiment makes the disclosure of the present invention complete, and the scope of the invention to those skilled in the art. It is provided for complete information. Shapes of the elements in the drawings may be exaggerated parts for a more clear description, elements denoted by the same reference numerals in the drawings means the same element.

As illustrated in FIG. 1, the chemical vapor deposition apparatus according to the first embodiment includes a reaction chamber 1100, a buffer chamber 1200, a transfer apparatus, a gas supply unit 1400, and a power supply unit ( 1500, and a control unit 1600.

First, the transfer apparatus will be described in detail. The transfer device includes a substrate supply / discharge device 1310, a first pickup device 1320, an actuator unit 1330, a robot arm 1340, a first plate 1350a, a second plate 1350b, and a first device. It may include a three plate (1350c) and the second pickup device (1370).

Specifically, the substrate supply / discharge apparatus 1310 is a means for supplying a substrate (W) in the form of a wafer (wafer) to the workplace or to discharge the substrate to the outside of the workplace, conveyor, transport robot, pickup robot or linear actuator ( linear actuator) or the like.

The first pickup device 1320 is a means for loading the substrate W on an upper surface of the susceptor S, and may be a transport robot or a pickup robot. As another example, the substrate may be directly loaded onto the plate using the first pickup device 1320 without loading the substrate onto the susceptor.

The actuator unit 1330 includes a first actuator 1331, a second actuator 1332, and a third actuator 1333. The first actuator 1331, the second actuator 1332, and the third actuator 1333 respectively include the first plate 1350a, the second plate 1350b, and the third plate 1350c in the respective reaction chambers 1100. To the buffer chamber 1200, or from the buffer chamber 1200 to the reaction chamber 1100.

The first plate 1350a, the second plate 1350b, and the third plate 1350c are the same plates on which the substrate or susceptor can be loaded. Each plate is provided with a recess or hole through which the lift unit 1380 can be lifted and lifted so as to lift the substrate or susceptor loaded on the plate upper surface.

The robot arm 1340 may hold the susceptor S and enter the buffer chamber 1200 to lower the susceptor on the upper surface of the first plate 1350a. In addition, the robot arm 1340 may transfer the susceptor mounted on the upper surface of the first plate 1350a to the second plate 1350b in the buffer chamber 1200, and may be loaded on the upper surface of the second plate 1350b. The susceptor may be transferred to the third plate 1350c.

The lift unit 1380 may be provided inside the buffer chamber as a member for elevating the susceptor. The robot arm 1340 enters the buffer chamber and then lifts the lifter 1380 to lift the susceptor S. When the robot arm 1340 exits the buffer chamber, the lift unit 1380 descends to lower the susceptor S on the

plates

1350a, 1350b, and 1350c.

When the buffer chamber gate valve 1214 is opened, the robot arm 1340 may enter the buffer chamber 1200 through the buffer chamber gate 1213. The susceptor placed on the first plate 1350a may be transferred to the second plate 1350b or the third plate 1350c. The configuration of the transfer device is not limited to the embodiments described below, and various modifications are possible to carry out or carry the substrate into the plurality of reaction chambers and the buffer chamber.

Next, the gas supply unit 1400 will be described in detail. The gas supply unit 1400 includes a hydrogen supply unit 1410, a nitrogen supply unit 1420, an ammonia (NH 3) supply unit 1430, a silane (SiH 4) supply unit 1440, a trimethylgallium (TMG) supply unit 1450, and trimethyl indium ( TMI) supply unit 1460, Cp2Mg (bis-cyclopentadienyl magnesium) supply unit 1470, and the like.

The hydrogen supply unit 1410, the nitrogen supply unit 1420, and the ammonia supply unit 1430 may each include hydrogen in the buffer chamber 1200, the first reaction chamber 1110, the second reaction chamber 1120, and the third reaction chamber 1130. (H2), nitrogen (N2) and ammonia (NH3) can be supplied. As another embodiment, an embodiment including a supply unit for supplying Group V gas other than ammonia is also possible.

The silane (SiH 4) supply unit 1440 may supply the silane (SiH 4) to the reaction chamber 1100. As another embodiment, an embodiment including a supply unit for supplying another n-type doping gas (eg, a gas containing Ge, Sn, etc.) in addition to SiH 4 may be possible.

The trimethylgallium supply unit 1450 may supply trimethylgallium to the reaction chamber 1100. As another embodiment, an embodiment including a supply for supplying other group III gas in addition to trimethylgallium is also possible.

The trimethyl indium supply unit 1460 may supply trimethyl indium to the reaction chamber 1100. As another embodiment, an embodiment including a supply for supplying other group III gas in addition to trimethyl indium is also possible. As another embodiment, when a process of forming an AlGaN layer is included, a supply unit for supplying trimethyl aluminum (TMA) as a group III gas may be provided.

The Cp2Mg supply unit 1470 may supply Cp2Mg (bis-cyclopentadienyl-magnesium) to the reaction chamber 1100. As another embodiment, the embodiment also includes a supply for supplying other p-type doping gas (for example, gas containing Zn, Ca, Be, etc.) in addition to the Cp2Mg gas containing magnesium (Mg) as a p-type doping gas It is possible.

The power supply unit 1500 may supply power to the reaction chamber 1100 or the buffer chamber 1200. The power supply unit 1500 includes a first power supply unit 1510, a second power supply unit 1520, and a third power supply unit 1530.

The controller 1600 may control the reaction chamber 1100, the buffer chamber 1200, the transfer apparatus, the gas supply unit 1400, the power supply unit 1500, and the like.

Next, the reaction chamber 1100 will be described in detail. The reaction chamber 1100 includes a first reaction chamber 1110, a second reaction chamber 1120, and a third reaction chamber 1130 arranged in a row. The reaction chamber is not necessarily limited to three, but may be composed of two to nine or more.

The susceptor S is loaded into the first reaction chamber 1110 through the first reaction chamber gate 1115. Inside the first reaction chamber 1110, a rotating part (1112 of FIG. 2) is installed on which a susceptor is mounted. In another embodiment, a susceptor support on which the susceptor is simply mounted on the upper surface of the first reaction chamber 1110 may be installed without rotating.

In the first reaction chamber 1110, a process of heat treating the substrate may be performed. The gas supply unit 1400 may form a hydrogen atmosphere or a mixed gas atmosphere of hydrogen and nitrogen inside the first reaction chamber 1110. The foreign material layer such as an oxide layer on the substrate may be removed by controlling the temperature inside the first reaction chamber 1110 to about 1000 to 1200 degrees Celsius by a heater (not shown).

In the first reaction chamber 1110, a process of growing a GaN buffer layer may be performed. The hydrogen supply atmosphere may be formed inside the first reaction chamber 1110 by the gas supply unit 1400, and trimethylgallium (TMG) and ammonia gas may be introduced. In addition, the substrate or susceptor may be heated by about 450 degrees to about 700 degrees Celsius, and more specifically about 500 to 600 degrees Celsius. The GaN buffer layer may be grown on the upper surface of the substrate heat-treated by this process.

In another embodiment, the buffer layer may be an AlN layer including an aluminum element and a nitrogen element. In another embodiment, when the active layer includes InAlGaN, the buffer layer may include an AlGaN layer.

In the first reaction chamber 1110, a process of growing a GaN buffer layer and then growing an undoped GaN layer may be performed. In another embodiment, a process of growing an undoped InGaN layer or an undoped AlGaN layer may be performed. The inside of the first reaction chamber 1110 is heated so that the temperature of the substrate is about 1000 degrees to 1200 degrees Celsius, and more specifically, about 1030 degrees to 1080 degrees Celsius so that the undoped GaN layer can grow. The process of growing the buffer layer and the undoped GaN layer on the sapphire substrate can improve the electrical and crystallographic growth efficiency of the GaN thin film.

Further, in the first reaction chamber 1110, a process of growing an n-type GaN layer (Si or Ge doping) may be performed on the undoped GaN layer. The hydrogen supply atmosphere may be formed inside the first reaction chamber 1110 by the gas supply unit 1400, and trimethylgallium (TMG) and ammonia gas may be introduced. Further, Silane (SiH 4) or Germane (Germane) (GeH 4) may be further added to dope Si or Ge. In addition, the substrate or susceptor may be heated to about 1000 ~ 1200 degrees Celsius by the heater. By this process, an n-type GaN layer may be grown on the upper surface of the GaN layer.

In another embodiment, the n-type layer may be a stacked structure of n-GaN / n-AlGaN / n-InGaN. In another embodiment, the n-type layer is formed of n-GaN / n-AlGaN, n-GaN / n-AlGaN / n-GaN, n-GaN / n-InGaN / n-AlGaN / n-GaN, or the like. It may be a structure. Each n-type layer may be formed on the substrate by a vapor deposition process in a different reaction chamber. In another embodiment, when the active layer includes InAlGaN, the n-type layer may include an n-AlGaN layer.

In the second reaction chamber 1120, a process of growing an active layer may be performed. Nitrogen (N2) gas atmosphere may be formed inside the reaction chamber by the gas supply unit 1400. Tri-methyl-gallium (TMG), tri-methyl-indium (TMI) and ammonia gas may be formed. It can be put in. In addition, the temperature of the substrate or susceptor can be adjusted by about 700 degrees to 900 degrees Celsius by the heater. The active layer may be a single quantum well (SQW) layer or a multi quantum well (MQW) layer having a plurality of quantum wells. That is, multiple quantum well layers may be formed by alternately stacking a barrier layer and a quantum well layer having different indium (In) and gallium (Ga) contents. By this process, an active layer may be grown on the n-type GaN layer. The active layer may have a stacked structure such as InGaN QW, InGaN / GaN QW, InGaN / AlGaN QW, InGaN / InGaN QW, GaN / AlGaN QW, InAlGaN / InAlGaN QW.

In the third reaction chamber 1130, a process of growing a p-type GaN layer (Mg doping) may be performed. A hydrogen gas atmosphere may be formed inside the reaction chamber by the gas supply unit 1400, and trimethylgallium (TMG), bis-cyclopentadienyl-magnesium (Cp2Mg), and ammonia gas may be introduced. In addition, the temperature of the substrate or susceptor may be adjusted by about 900 to 1200 degrees Celsius by a heater (not shown). By this process, a p-type GaN layer may be grown on the active layer. The p-type GaN layer may have a stacked structure of p-AlGaN / p-GaN, p-AlGaN / p-GaN / p-AlGaN / p-GaN, p-GaN / p-AlGaN / p-GaN. When a process of growing an AlGaN layer is added, the gas supply unit may supply hydrogen, group III gas (TMA: trimethylaluminium), and group V gas required to form the AlGaN layer.

In another embodiment, an annealing process may be performed in the third reaction chamber 1130. For example, annealing may be performed on the thin film formed in the previous process by maintaining the temperature inside the reaction chamber at 600 to 900 degrees Celsius. In another embodiment, after the annealing process, a cooling process may be performed or only the cooling process may be performed without the annealing process. In another embodiment, a process of irradiating a low energy electron beam irradiation treatment may be performed instead of the annealing process in the third reaction chamber. As another example, an annealing process may be performed in the buffer chamber 1200.

Next, the buffer chamber 1200 will be described in detail. The buffer chamber 1200 is connected to the plurality of reaction chambers 1100 and serves as a passage through which the susceptor passes when the susceptor is taken out from one reaction chamber and then brought into the other reaction chamber. Before the susceptor is removed from the first reaction chamber 1110, the temperature of the buffer chamber 1200 may be adjusted similarly to the temperatures of the first reaction chamber 1110 and the second reaction chamber 1120. That is, before the heat treatment process is performed in the first reaction chamber 1110, the temperature inside the buffer chamber 1200 may be adjusted in advance to about 500 to 1200 degrees Celsius, and more specifically to about 600 to 900 degrees Celsius. Accordingly, the time required to heat the substrate to the temperature required for the heat treatment process can be reduced. By the hydrogen supply unit 1410 and the nitrogen supply unit 1420, the inside of the buffer chamber 1200 may be previously adjusted to a hydrogen atmosphere or a nitrogen atmosphere.

1 and 2, when the buffer chamber gate valve 1214 is opened, the first actuator 1331 passes through the buffer chamber gate 1213 to pass the first plate 1350a into the buffer chamber 1200. Imported into The robot arm 1340 loads the susceptor S on the first plate 1350a in the buffer chamber.

If the process of forming the n-type GaN layer in any one reaction chamber proceeds at about 1200 degrees Celsius, the thermal shock to the substrate is reduced when the substrate is removed from the reaction chamber 1100. The temperature can be adjusted to about 500-1200 degrees in advance. In addition, the gas atmosphere inside the buffer chamber 1200 may be adjusted to a hydrogen atmosphere.

When the process in the first reaction chamber is completed, the lift part 1119 provided in the rotating part 1112 is raised to lift the susceptor loaded on the upper part of the rotating part 1112. In addition, the first plate 1350a is carried into the first reaction chamber 1110 and is positioned between the rotating part 1112 and the susceptor S. When the lift unit 1119 descends, the susceptor S is loaded on the first plate 1350a, and the first plate is carried out to the buffer chamber 1200.

When the first reaction chamber gate valve 1116 provided at the first reaction chamber outlet 1110a is opened, the first plate 1350a passes through the first reaction chamber gate 1115 and is buffered from the first reaction chamber 1110. It may be transferred to the chamber 1200.

The lift unit 1380 on the upper surface of the pedestal 1351 may be raised so that the robot arm 1340 may hold the susceptor S transferred to the buffer chamber 1200 (see FIG. 1). When the lift unit 1380 is raised between the recesses of the plate to lift the susceptor S, the robot arm 1340 grips the susceptor S. The susceptor is mounted on the second plate 1350b positioned in front of the second reaction chamber gate 1125.

The buffer chamber 1200 is provided with a heater 1203 for adjusting the internal temperature of the buffer chamber to about 600 degrees Celsius to 900 degrees Celsius. This heater 1203 may be a lamp heater or an RF heater.

The first reaction chamber 1110 is provided with a shower head 1111 for injecting a processing gas toward the susceptor. A heater (not shown) for heating the susceptor may be installed inside the rotating unit 1112. The motor 1114 may rotate the susceptor S and the rotating part 1112. The susceptor S may be separated from and coupled to the rotating part 1112 at the upper end of the rotating shaft 1113.

3 is a schematic plan view of a second embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment. The description overlapping with the first embodiment of FIG. 1 will be omitted. The second embodiment includes three reaction chambers, and the manner of conveying the susceptor is different from that of the first embodiment.

As shown in FIG. 3, the actuator unit 2330 includes an actuator 2331, an actuator transfer motor 2332, and an actuator transfer rail 2333.

The actuator 2331 is slidably coupled to the actuator transfer rail 2333, and the actuator 2331 is slidable along the actuator transfer rail 2333 by the actuator transfer motor 2332.

After the susceptor S is taken out from the first reaction chamber 2110 to the buffer chamber 2200 by the actuator 2331, the actuator transfer motor 2332 is positioned so that the susceptor S is located in front of the second reaction chamber. Move the actuator 2331. When the actuator 2331 moves, the susceptor S is transferred in a state located inside the buffer chamber 2200. Accordingly, the substrate may be loaded into each reaction chamber 2100 or the buffer chamber 2200 using only one actuator.

4 is a schematic plan view of a third embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment. The description overlapping with the first and second embodiments is omitted. The third embodiment includes four reaction chambers, and the manner of conveying the susceptor is different from that of the first and second embodiments.

As shown in FIG. 4, the transfer apparatus includes a first robot arm 3706, a first robot arm transfer rail 3705, a second robot arm 3708, a second robot arm transfer rail 3707, and a first plate. Reference numeral 3702a may include a second plate 3702b, a third plate 3702c, a fourth plate 3702d, and a roller portion 3701.

The second robot arm 3708 may receive the unprocessed substrate W from the substrate supply unit 3801, pick up the substrate, and load the substrate on the susceptor. The second robot arm 3708 is coupled to the second robot arm transfer rail 3707 to be slidably movable. The second robot arm 3708 may access the susceptor placed in the susceptor carrying part 3803, pick up the processed substrate, and transfer the processed substrate to the substrate carrying part 3804.

The first robot arm 3706 picks up the susceptor on which the substrate is loaded from the susceptor supply unit 3802 and carries it into the buffer chamber 3200, and loads the loaded susceptor into the first plate 3702a. When the processed susceptor is taken out from the fourth reaction chamber 3140 to the buffer chamber, the first robot arm 3706 picks up the susceptor loaded in the fourth plate 3702d and takes it out, and the susceptor carrying part Transfer the susceptor to (3803).

The roller part 3701 is provided inside the buffer chamber 3200 and is rotatable in place so that the first plate 3702a may be conveyed to the first reaction chamber. The roller portion 3701 includes one or a plurality of rotatable rollers. The roller and the plate may be coupled to each other by a gear provided to transfer the plate.

5 is a schematic plan view of a fourth embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment. The description overlapping with the first to third embodiments is omitted. The fourth embodiment includes four reaction chambers, and the manner of conveying the susceptor is different from that of the first to third embodiments.

As shown in FIG. 5, the transfer apparatus includes a substrate supply / discharge apparatus 4310, a first pickup apparatus 4320, a first actuator 4331, a second actuator 4332, a third actuator 4333, and a third actuator 4 actuator 4340, first plate 4350a, second plate 4350b, third plate 4350c, fourth plate 4350d, first robot arm 4340, second robot arm 4360a, A third robot arm 4360b, a fourth robot arm 4360c, and a second pickup device 4370 may be included.

The second robot arm 4360a may transport the susceptor mounted on the upper surface of the first plate 4350a to the upper surface of the second plate 4350b inside the buffer chamber 4200. The lower portion of each plate is provided with a lift portion 4380 for lifting the substrate or susceptor. Therefore, when the lift unit 4380 raises the susceptor loaded on the upper surface of the first plate 4350a, the second robot arm 4360a may enter between the susceptor and the first plate 4350a. Next, when the lift part 4380 lowers the susceptor, the susceptor is loaded on the upper surface of the second robot arm 4360a. The third robot arm 4360b may transport the susceptor mounted on the upper surface of the second plate 4350b to the upper surface of the third plate 4350c inside the buffer chamber 4200. The second robot arm 4360a to the fourth robot arm 4360c are preferably made of a heat resistant material to operate stably at a temperature of about 1000 degrees Celsius.

The buffer chamber 4200 is provided with a first buffer chamber gate 4213, a first buffer chamber gate valve 4214, a second buffer chamber gate 4223, and a second buffer chamber gate valve 4224.

6 is a schematic plan view of a fifth embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment. The fifth embodiment includes six reaction chambers, and the manner of conveying the susceptor is different from that of the first to fourth embodiments.

As shown in FIG. 6, the transfer apparatus includes a substrate supply / discharge apparatus 5310, a first pickup apparatus 5320, an actuator 5330, a plurality of plates 5340, and a second pickup apparatus 5260. . Actuator 5330 includes first to

sixth actuators

5331, 5332, 5333, 5334, 5335, and 5336.

The plate 5340 is detachable from the actuator 5330, and when the plate 5340 is loaded on the plate carrying part 5350 and then separated from the actuator 5330, the plate 5340 and the plate 5340 are separated from the actuator 5330. The susceptor S is transferred horizontally to the other reaction chamber. The plate carrier 5350 may be a conveyor belt or similar device. A coupling device (not shown) is provided at the rod end of the actuator 5330 so that the plate 5340 and the actuator 5330 are coupled or separated. Therefore, when the process is completed in any one reaction chamber and the plate is taken out, a control signal is transmitted to the coupling device to separate the plate 5340 and the actuator 5330.

Hereinafter, a substrate processing method according to the present invention will be described.

7 is a flowchart of a substrate processing method using a chemical vapor deposition apparatus including nine reaction chambers. The thin film to be formed by this method is composed of a buffer layer / undoped GaN layer / n-type GaN layer / n-type AlGaN layer / active layer / p-type AlGaN layer / p-type GaN layer. In addition to the method illustrated in FIG. 7, a type of processes that may be performed in each reaction chamber may be modified, and a plurality of processes may be performed in any one reaction chamber.

As shown in FIG. 7, first, a step (S101) of loading a substrate into the first reaction chamber is performed. Next, a step S102 of performing heat treatment on the substrate in the first reaction chamber is performed. Hydrogen gas, or a mixture of hydrogen and nitrogen, may be supplied into the first reaction chamber, and the substrate or susceptor is heated (for example, about 1200 degrees) to remove a foreign material layer such as an oxide film on the substrate. can do.

Next, the step S103 of carrying out the substrate from the first reaction chamber to the buffer chamber and carrying it into the second reaction chamber is performed. The buffer chamber is heated to a predetermined temperature in advance so that a sudden temperature change does not occur with respect to the substrate.

Next, a step (S104) of forming a buffer layer on the substrate in the second reaction chamber is performed. That is, hydrogen, trimethylgallium (TMG) and ammonia gas are introduced into the second reaction chamber, and the substrate or susceptor is heated to a predetermined temperature (for example, about 600 degrees). By this process, the GaN buffer layer may be grown on the heat treated substrate.

Next, a step (S105) of carrying out the substrate from the second reaction chamber to the buffer chamber and carrying it into the third reaction chamber is performed.

Next, in step S106, an undoped GaN layer is formed on the substrate in the third reaction chamber. Hydrogen (H 2), trimethylgallium (TMG), ammonia (NH 3) are injected into the third reaction chamber, and the substrate or susceptor may be heated to, for example, 1200 degrees. By this process, an undoped GaN layer is grown on the GaN buffer layer.

Next, the step S107 of carrying out the substrate from the third reaction chamber to the buffer chamber and carrying it into the fourth reaction chamber is performed.

Next, in step S108, an n-type GaN layer is formed on the substrate in the fourth reaction chamber. That is, hydrogen (H 2), trimethylgallium (TMG), ammonia (NH 3), and SiH 4 are injected into the fourth reaction chamber, and the substrate or susceptor is heated at, for example, 1200 degrees. By this process, an n-type GaN layer (Si doping) is grown on the undoped GaN layer.

Next, a step (S109) of carrying out the substrate from the fourth reaction chamber to the buffer chamber and carrying it into the fifth reaction chamber is performed. The buffer chamber may be heated to a predetermined temperature so that a sudden temperature change does not occur with respect to the substrate. The heating temperature may be set between approximately 500 to 1200 degrees Celsius, and in some cases, may be set to about 700 degrees.

Next, in step S110, an n-type AlGaN layer is formed on the substrate in the fifth reaction chamber. SiH 4, trimethylaluminum, trimethylgallium, ammonia and hydrogen may be supplied into the fifth reaction chamber to form a si-doped AlGaN layer.

Next, the step S111 of carrying out the substrate from the fifth reaction chamber to the buffer chamber and carrying it into the sixth reaction chamber is performed.

Next, forming an active layer on the substrate in the sixth reaction chamber (S112) is performed. That is, nitrogen (N 2), trimethylgallium (TMG), trimethyl indium (TMI), and ammonia (NH 3) are injected into the sixth reaction chamber, and the temperature of the substrate or susceptor is variably controlled at about 700 to 900 degrees.

Next, the step S113 of carrying out the substrate from the sixth reaction chamber to the buffer chamber and carrying it into the seventh reaction chamber is performed.

Next, in operation S114, a p-type AlGaN layer is formed on the substrate in the seventh reaction chamber. That is, Mp-doped AlGaN layer may be formed by supplying Cp 2 Mg, trimethylaluminum, trimethylgallium, ammonia, and hydrogen.

Next, the step S115 of carrying out the substrate from the seventh reaction chamber to the buffer chamber and carrying it into the eighth reaction chamber is performed.

Next, forming a p-type GaN layer on the substrate in the eighth reaction chamber (S116) is performed. Cp 2 Mg, trimethylgallium, ammonia and hydrogen are injected into the eighth reaction chamber, and the substrate or susceptor is variably controlled at about 1200 degrees. By this process, the Mg-doped GaN layer may be grown on the active layer. In the case of using Cp2Mg as the p-type doping gas, a cleaning operation is necessary because the magnesium component may be attached inside the reaction chamber, and such magnesium component may adversely affect other processes. While the eighth reaction chamber is cleaned, each process may proceed without interruption in the remaining reaction chambers.

Next, the step S117 of carrying out the substrate from the eighth reaction chamber to the buffer chamber and carrying it into the ninth reaction chamber is performed.

Next, step S118 of performing annealing in the ninth reaction chamber is performed. That is, the interior of the chamber is adjusted to 600-900 degrees Celsius while maintaining a nitrogen atmosphere. As another example, a cooling process may be performed after annealing in the ninth reaction chamber, and a cooling process may be performed without annealing in the ninth reaction chamber. In addition, the cooling process may be performed in the buffer chamber. The cooling process may be, for example, a process of naturally cooling the substrate to about 100 to 300 degrees.

Next, the susceptor is carried out to the outside, and the substrate on the upper surface of the susceptor is picked up by the pickup device and transferred to the substrate supply and discharge device.

8 is a flowchart of a substrate processing method using a chemical vapor deposition apparatus including six reaction chambers. In FIG. 7, the case of using nine reaction chambers has been described, but the case of using six reaction chambers will be described below. The thin film to be formed by this method consists of a buffer layer / n-type GaN layer / active layer / p-type GaN layer.

First, the step of bringing the substrate into the first reaction chamber (S201), the step of heat treating the substrate in the first reaction chamber (S202), the substrate is taken out of the first reaction chamber into the buffer chamber, the second reaction Step S203 is carried in to the chamber.

Next, forming a buffer layer in the second reaction chamber (S204), carrying out the substrate from the second reaction chamber to the buffer chamber, and step (S205) carried in the third reaction chamber.

Next, in step S206, the n-type GaN layer is formed in the third reaction chamber, and the substrate is carried out from the third reaction chamber to the buffer chamber and then loaded into the fourth reaction chamber (S207).

Next, forming an active layer in the fourth reaction chamber (S208), carrying out the substrate from the fourth reaction chamber to the buffer chamber, and carrying in the fifth reaction chamber (S209).

Next, growing the p-type GaN layer in the fifth reaction chamber (S210), carrying out the substrate from the fifth reaction chamber to the buffer chamber, and carrying in the sixth reaction chamber (S211). In the case of using Cp2Mg as the p-type doping gas, a cleaning operation is necessary because the magnesium component may be attached inside the reaction chamber, and such magnesium component may adversely affect other processes. While the fifth reaction chamber is cleaned, each process may proceed without interruption in the remaining reaction chambers. Next, annealing the substrate in the sixth reaction chamber (S212) or cooling is performed.

On the other hand, even in the case of forming a more complicated lamination structure such as a buffer layer / undoped GaN layer / n type GaN layer / n type AlGaN layer / active layer / p type AlGaN layer / p type GaN layer, six reaction chambers are included. A chemical vapor device can be used. That is, forming the buffer layer and forming the undoped GaN layer may be performed in the second reaction chamber. In addition, the forming of the n-type GaN layer and the forming of the n-type AlGaN layer may be performed in the third reaction chamber. In addition, the forming of the p-type AlGaN layer and the forming of the p-type GaN layer may be performed in the fifth reaction chamber.

9 is a flow chart of a substrate processing method using a chemical vapor deposition apparatus including three reaction chambers. In FIG. 8, the case of using six reaction chambers has been described, but the case of using three reaction chambers will be described below. The thin film to be formed by this method consists of a buffer layer / n-type GaN layer / active layer / p-type GaN layer.

First, a step (S301) of carrying a substrate into the first reaction chamber and a step (S302) of heat treating the substrate in the first reaction chamber are performed. Next, the step S303 of carrying out the substrate from the first reaction chamber to the buffer chamber and carrying it into the second reaction chamber is performed.

Next, forming a buffer layer on the substrate in the second reaction chamber (S304), forming an n-type GaN layer (S305), and forming an active layer (S306) are performed. In operation S307, the substrate is carried out from the second reaction chamber to the buffer chamber and loaded into the third reaction chamber.

Next, growing the p-type GaN layer in the third reaction chamber (S308), performing annealing (S309) is performed.

In another embodiment, heat treating the substrate and forming the buffer layer may be performed in different reaction chambers. This process separation reduces the time required to adjust the temperature inside the reaction chamber to the process temperature required, and also prevents the problem that the gas used in the previous process affects the next process.

An embodiment of the present invention described above and illustrated in the drawings should not be construed as limiting the technical idea of the present invention. The protection scope of the present invention is limited only by the matters described in the claims, and those skilled in the art can change and change the technical idea of the present invention in various forms. Therefore, such improvements and modifications will fall within the protection scope of the present invention, as will be apparent to those skilled in the art.

Claims

Forming an undoped layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the first chamber;

Removing the substrate from the first chamber into the buffer chamber and then loading the substrate into the second chamber; And

Forming an n-type layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the second chamber; Substrate processing method comprising.
The method of claim 1,

The group-III element includes at least one of aluminum (Al), gallium (Ga), and indium (In).
The method of claim 1,

And the undoped layer comprises an undoped GaN layer.
The method of claim 1,

And the inner temperature of the second chamber is about 1000 to 1200 degrees Celsius when the substrate is loaded into the second chamber.
The method of claim 1,

The internal temperature of the buffer chamber is about 600 ~ 900 degrees Celsius substrate processing method.
The method of claim 1,

The internal gas atmosphere of the buffer chamber is a hydrogen gas atmosphere.
The method of claim 1,

Removing the substrate from the second chamber into the buffer chamber and then loading the substrate into a third chamber; And

Forming an active layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the third chamber; Treatment method.
The method of claim 7, wherein

Wherein the internal temperature of the third chamber is about 700 to 900 degrees Celsius when the substrate is loaded into the third chamber.
The method of claim 7, wherein

Removing the substrate from the third chamber into the buffer chamber and then loading the substrate into the fourth chamber; And

Forming a p-type layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the fourth chamber; Further comprising a substrate processing method.
The method of claim 1,

An active layer including a group-III element and a group-V element on the substrate by vapor deposition in the second chamber after forming the n-type layer. Forming a;

Removing the substrate from the second chamber into the buffer chamber and then loading the substrate into a third chamber; And

Forming a p-type layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the third chamber; Further comprising a substrate processing method.
The method of claim 10,

And wherein the internal temperature of the third chamber is about 1000 to 1200 degrees Celsius when the substrate is loaded into the third chamber.
The method of claim 1,

A buffer layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the first chamber prior to forming the undoped layer. Substrate processing method further comprising the step of forming.
The method of claim 12,

Wherein the internal temperature of the first chamber in the step of forming the buffer layer is about 450 to 700 degrees Celsius.
The method of claim 12,

The buffer layer comprises at least one of AlN, GaN, AlGaN.
The method of claim 12,

Heat treating the substrate in a third chamber prior to forming the buffer layer; And

Removing the substrate from the third chamber into the buffer chamber and then loading the substrate into the first chamber.
The method of claim 15,

The heat treatment may include heating the substrate at about 1000 to 1200 degrees Celsius.
The method of claim 1,

Prior to forming the undoped layer, a buffer layer including a group-III element and a group-V element is formed on the substrate by vapor deposition in a third chamber. Forming; And

Removing the substrate from the third chamber into the buffer chamber and then loading the substrate into the first chamber.
The method of claim 17,

And wherein the internal temperature of the first chamber is about 1000 to 1200 degrees Celsius when the substrate is loaded into the first chamber.
The method of claim 17,

Heat treating the substrate in a fourth chamber before forming the buffer layer; And

Removing the substrate from the fourth chamber into the buffer chamber and then loading the substrate into the third chamber.