CN102804412A - Substrate processing method - Google Patents

Substrate processing method Download PDF

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Publication number
CN102804412A
CN102804412A CN2010800638563A CN201080063856A CN102804412A CN 102804412 A CN102804412 A CN 102804412A CN 2010800638563 A CN2010800638563 A CN 2010800638563A CN 201080063856 A CN201080063856 A CN 201080063856A CN 102804412 A CN102804412 A CN 102804412A
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China
Prior art keywords
chamber
substrate
execution
forms
cushion
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CN2010800638563A
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Chinese (zh)
Inventor
洪性在
韩锡万
陈周
郑镇烈
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LIG ADP CO Ltd
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LIG ADP CO Ltd
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Publication date
Priority claimed from KR1020090124226A external-priority patent/KR101062459B1/en
Priority claimed from KR1020090124224A external-priority patent/KR101062463B1/en
Priority claimed from KR1020090124678A external-priority patent/KR101075179B1/en
Priority claimed from KR1020090135715A external-priority patent/KR101078596B1/en
Priority claimed from KR1020090135707A external-priority patent/KR101071249B1/en
Application filed by LIG ADP CO Ltd filed Critical LIG ADP CO Ltd
Publication of CN102804412A publication Critical patent/CN102804412A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices

Abstract

A substrate processing method is required in a process for forming a thin film on a substrate so as to improve the process efficiency and form a high quality thin film. To this end, the substrate processing method according to the present invention comprises: forming an active layer including a group-III element and a group-V element on a substrate in the first chamber by a vapor deposition process; introducing the substrate from the first chamber into a buffer chamber then into the second chamber different from the first chamber; and forming a p-type layer including a group-III element and a group-V element on a substrate in the second chamber by a vapor deposition process.

Description

Method of processing a substrate
Technical field
The present invention relates to a kind of Method of processing a substrate, more specifically, relate to a kind of on substrate film forming method.
Background technology
Generally speaking, light-emitting diode (LED) has the structure of sequentially range upon range of n type layer, active layer and p type layer.One of method that forms n type layer, active layer and p type layer is a Metalorganic Chemical Vapor Deposition.Thereby Metalorganic Chemical Vapor Deposition is that chemical reaction forms required film on said substrate surface method takes place towards heated substrate metal injection organic compound gas and on said heated substrate surface.
For traditional Metalorganic Chemical Vapor Deposition, the institute of execution formation n type layer, active layer and p type layer in steps in a reaction chamber.Yet the problem of the method is the time that deposition process need cost a lot of money.
The reason of this problem is because temperature required and required atmosphere is different in the step of each layer of deposition, therefore temperature raise or be reduced to perhaps controlling required atmosphere during temperature required during, each step must be suspended and wait for.
Summary of the invention
Technical problem
On substrate, in the film forming process, need a kind of Method of processing a substrate that can improve process efficiency and form high-quality thin film.
Technical purpose of the present invention is not limited to above-mentioned purpose, and from following description, more than also do not describe other technical purpose and will become obvious to those skilled in the art.
Technical scheme
Be used to reach above purpose according to Method of processing a substrate of the present invention, comprise step: in first chamber, on substrate, form the active layer that comprises III family element and V group element through vapor deposition processes; Said substrate is fetched into cushion chamber from said first chamber, then said substrate is sent into second chamber that is different from said first chamber; And in said second chamber, on said substrate, form the p type layer that comprises III family element and V group element through vapor deposition processes.
In addition, said III family element can comprise at least a in aluminium (Al), gallium (Ga) and the indium (In).
In addition, said active layer can comprise at least a among GaN, InGaN, AlGaN and the InAlGaN.
In addition, said p type layer can comprise at least a among p type GaN and the p type AlGaN.
In addition, said p type layer can comprise p type GaN layer and p type AlGaN layer, and said p type GaN layer and said p type AlGaN layer can be formed on the said substrate through vapor deposition processes in different cavity.
In addition, when said substrate being sent in said second chamber, the temperature in said second chamber can be about 1000 to 1200 ℃.
In addition, the temperature in the said cushion chamber can be about 600 to 900 ℃.
In addition, the gas atmosphere in the said cushion chamber can be hydrogen atmosphere.
In addition, may further include step: said substrate is fetched into said cushion chamber from said second chamber, then said substrate is sent into the 3rd chamber that is different from said first chamber and said second chamber; And in said the 3rd chamber, said substrate is annealed.
In addition, may further include step: said substrate is fetched into said cushion chamber from said second chamber, then said substrate is sent into the 3rd chamber that is different from said first chamber and said second chamber; And in said the 3rd chamber, cool off said substrates at 100 to 300 ℃.
In addition, the gas atmosphere in said the 3rd chamber can be nitrogen atmosphere.
In addition, before forming the step of said active layer, can carry out in the 3rd chamber that is different from said first chamber and said second chamber step that on said substrate, forms the n type layer that comprises III family element and V group element through vapor deposition processes; And carry out said substrate is fetched into said cushion chamber from said the 3rd chamber, then said substrate is sent into the step in said first chamber.After the step that forms said p type layer, carry out said substrate is fetched into said cushion chamber from said second chamber, then said substrate is sent into the step in the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 4th chamber.
In addition, before the step that forms said active layer, can carry out in the 3rd chamber that is different from said first chamber and said second chamber said substrate step of heat treatment; Execution is fetched into said cushion chamber with said substrate from said the 3rd chamber, then said substrate is sent into the step in said first chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said first chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said first chamber; And carry out in said first chamber step that on said substrate, forms the n type layer that comprises III family element and V group element through vapor deposition processes.After the step that forms said p type layer, can carry out that said substrate is fetched into said cushion chamber from said second chamber, then said substrate is sent into the step in said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
In addition, before the step that forms said active layer, can carry out in the 3rd chamber that is different from said first chamber and said second chamber said substrate step of heat treatment; Execution is fetched into said cushion chamber with said substrate from said the 3rd chamber, then said substrate is sent into the step in the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution forms the step of the n type layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; And carry out said substrate is fetched into said cushion chamber from said the 4th chamber, then said substrate is sent into the step in said first chamber.After the step that forms said p type layer, can carry out that said substrate is fetched into said cushion chamber from said second chamber, then said substrate is sent into the step in said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
In addition, before the step that forms said active layer, can carry out in the 3rd chamber that is different from said first chamber and said second chamber said substrate step of heat treatment; Execution is fetched into said cushion chamber with said substrate from said the 3rd chamber, then said substrate is sent into the step in the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution is fetched into said cushion chamber with said substrate from said the 4th chamber, then said substrate is sent into the step in the 5th chamber that is different from said first chamber, said second chamber, said the 3rd chamber and said the 4th chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 5th chamber; Execution forms the step of the n type layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 5th chamber; And carry out said substrate is fetched into said cushion chamber from said the 5th chamber, then said substrate is sent into the step in said first chamber.After the step that forms said p type layer, can carry out that said substrate is fetched into said cushion chamber from said second chamber, then said substrate is sent into the step in said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
In addition, before the step that forms said active layer, can carry out in the 3rd chamber that is different from said first chamber and said second chamber said substrate step of heat treatment; Execution is fetched into said cushion chamber with said substrate from said the 3rd chamber, then said substrate is sent into the step in the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution is fetched into said cushion chamber with said substrate from said the 4th chamber, then said substrate is sent into the step in the 5th chamber that is different from said first chamber, said second chamber, said the 3rd chamber and said the 4th chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 5th chamber; Execution is fetched into said cushion chamber with said substrate from said the 5th chamber, then said substrate is sent into the step in the 6th chamber that is different from said first chamber, said second chamber, said the 3rd chamber, said the 4th chamber and said the 5th chamber; Execution forms the step of the n type layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 6th chamber; And said substrate is fetched into said cushion chamber from said the 6th chamber, then said substrate is sent into the step in said first chamber.After the step that forms said p type layer, can carry out that said substrate is fetched into said cushion chamber from said second chamber, then said substrate is sent into the step in said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
Beneficial effect
Because the temperature in each reaction chamber is controlled to be different temperatures or gas with various atmosphere in advance, therefore can sends into substrate in each reaction chamber immediately and can on substrate, carry out each process.Therefore, can reduce control temperature or time that gas atmosphere spent.In addition, if the temperature of resilient coating is controlled to be the required temperature of process of next step in advance, then can reduce the control time that underlayer temperature spent in the reaction chamber of the process that will carry out next step.
In addition, cushion chamber can prevent the film quality deterioration that caused by temperature jump.For example, when the substrate of will be in first reaction chamber, accomplishing a process has been fetched in the cushion chamber, can control the temperature of cushion chamber, thereby make the temperature of itself and first reaction chamber close.
In addition, when after accomplishing any process, clearing up reaction chamber inside, can substrate be sent into another reaction chamber and substrate is carried out next process, and need not suspend.Therefore, can reduce process time.
In addition, owing to can in a plurality of reaction chambers, carry out various process respectively simultaneously, therefore can increase yield of unit time.
Technique effect of the present invention is not limited to above effect, and from the following description, those skilled in the art obviously are appreciated that above other technique effect of not describing.
Description of drawings
Fig. 1 is the schematic plan view according to first embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention;
Fig. 2 is the schematic cross sectional views of A-A' section of the chemical vapor depsotition equipment of Fig. 1;
Fig. 3 is the schematic plan view according to second embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention;
Fig. 4 is the schematic plan view according to the 3rd embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention;
Fig. 5 is the schematic plan view according to the 4th embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention;
Fig. 6 is the schematic plan view according to the 5th embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention;
Fig. 7 is the flow chart that illustrates the Method of processing a substrate that utilizes the chemical vapor depsotition equipment that comprises 9 reaction chambers;
Fig. 8 is the flow chart that illustrates the Method of processing a substrate that utilizes the chemical vapor depsotition equipment that comprises 6 reaction chambers;
Fig. 9 is the flow chart that illustrates the Method of processing a substrate that utilizes the chemical vapor depsotition equipment that comprises 3 reaction chambers.
Embodiment
Below, will describe embodiments of the invention in detail with reference to accompanying drawing.Yet, the invention is not restricted to disclosed embodiment, but can accomplished in various ways.Present embodiment is provided so that disclosure of the present invention is complete and make those of ordinary skills understand scope of the present invention.For outstanding clearer description, can amplify the shape of element in the accompanying drawing etc.In institute's drawings attached, identical Reference numeral is represented identical parts.
Fig. 1 is the schematic plan view according to first embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention.
As shown in Figure 1, comprise reaction chamber 1100, cushion chamber 1200, transmitting device, gas supply unit 1400, power subsystem 1500 and control unit 1600 according to the chemical vapor depsotition equipment of first embodiment.
At first, describe transmitting device in detail.Transmitting device can comprise substrate supply/discharger 1310, first pick device 1320, actuating unit 1330, robots arm 1340, the first plate 1350a, the second plate 1350b, the 3rd plate 1350c and second pick device 1370.
More specifically; Substrate supply/discharger 1310 is that the substrate W with the wafer form is fed to yard (workshop) or substrate is discharged to the instrument outside the yard, and can be set to conveyer, transferring robot, picks up robot or linear actuators.
First pick device 1320 is that substrate W is loaded into the instrument on the upper surface of pedestal S, and can be transferring robot or pick up robot.As another embodiment, can utilize first pick device 1320 that substrate directly is loaded on the plate, and substrate is not loaded on the pedestal.
Actuating unit 1330 comprises first actuator 1331, second actuator 1332 and the 3rd actuator 1333.First actuator 1331, second actuator 1332 and the 3rd actuator 1333 can be transferred to the first plate 1350a, the second plate 1350b and the 3rd plate 1350c cushion chamber 1200 or be transferred to reaction chamber 1100 from cushion chamber 1200 from reaction chamber 1100 respectively.
The first plate 1350a, the second plate 1350b and the 3rd plate 1350c can be the plates that can be mounted with substrate or pedestal above each.In each that can be in the first plate 1350a, the second plate 1350b and the 3rd plate 1350c recess or hole are set, lifting unit 1380 can move up and down through this recess or hole, thus substrate or pedestal on the upper surface that is loaded into said plate that can raise.
Robots arm 1340 can catch pedestal S, gets into cushion chamber 1200, and pedestal is placed on the upper surface of the first plate 1350a.In addition, robots arm 1340 can be transferred to the pedestal on the upper surface that is loaded into the first plate 1350a the second plate 1350b in the cushion chamber 1200, and can the pedestal on the upper surface that be loaded into the second plate 1350b be transferred to the 3rd plate 1350c.
Lifting unit 1380 is to be used for raising and to reduce the member of pedestal and can be arranged on cushion chamber.Robots arm 1340 gets into cushion chamber, when lifting unit 1380 rises, lifts pedestal S then.In addition, when robots arm 1340 when cushion chamber comes out, lifting unit 1380 descends and pedestal S is placed on plate 1350a, 1350b and the 1350c.
When opening cushion chamber gate valve 1214, robots arm 1340 can pass cushion chamber gate 1213, gets into cushion chamber 1200 then.In addition, the pedestal that is arranged in the first plate 1350a can be transferred to the second plate 1350b or the 3rd plate 1350c.The structure of transmitting device is not limited to the embodiment of following description and can improves in every way, thereby makes transmitting device can a plurality of reaction chambers and cushion chamber sent into or seen off to substrate.
Below, describe gas supply unit 1400 in detail.Gas supply unit 1400 comprises hydrogen supply unit 1410, nitrogen supply (NS) unit 1420, ammonia (NH 3) feeding unit 1430, silane (SiH 4) feeding unit 1440, trimethyl gallium (trimethylgallium, TMG) feeding unit 1450, trimethyl indium (tri-methyl-indium, TMI) feeding unit 1460, two luxuriant magnesium (bis-cyclopentadienyl-magnesium, Cp 2Mg) feeding unit 1470 etc.
Hydrogen supply unit 1410, nitrogen supply (NS) unit 1420 and ammonia feeding unit 1430 can be with hydrogen (H 2), nitrogen (N 2) and ammonia (NH 3) be fed to cushion chamber 1200, first reaction chamber 1100, second reaction chamber 1120 and the 3rd reaction chamber 1130 respectively.As another embodiment, comprise that the embodiment of the feeding unit that is used to supply other V family gas except that ammonia is feasible.
Silane (SiH 4) feeding unit 1440 can be with silane (SiH 4) be fed to reaction chamber 1100.As another embodiment, comprise that being used for supply removes SiH 4Outside the embodiment of feeding unit of other n type impurity gas (gas that for example comprises Ge and Sn) be feasible.
Trimethyl gallium feeding unit 1450 can be fed to reaction chamber 1100 with trimethyl gallium.As another embodiment, comprise that the embodiment of the feeding unit that is used to supply other III family gas except that trimethyl gallium is feasible.
Trimethyl indium feeding unit 1460 can be fed to reaction chamber 1100 with trimethyl indium.As another embodiment, comprise that the embodiment of the feeding unit that is used to supply other III family gas except that trimethyl indium is feasible.As another embodiment,, then can further be provided for supplying the trimethyl aluminium as III family gas (tri-methyl-aluminum, feeding unit TMA) if comprise the process that forms the AlGaN layer.
Cp 2Mg feeding unit 1470 can be with two luxuriant magnesium (Cp 2Mg) be fed to reaction chamber 1100.As another embodiment, comprise that being used for supply removes Cp 2Other p type impurity gas (gas that for example comprises Zn, Ca and Be) outside the Mg gas (containing magnesium (Mg)) is feasible as the embodiment of the feeding unit of p type impurity gas.
Power subsystem 1500 can provide electric energy to reaction chamber 1100 or cushion chamber 1200.Power subsystem 1500 comprises first power subsystem 1510, second source unit 1520 and the 3rd power subsystem 1530.
Control unit 1600 can be controlled reaction chamber 1100, cushion chamber 1200, transmitting device, gas supply unit 1400 and power subsystem 1500.
Below, describe reaction chamber 1100 in detail.Reaction chamber 1100 comprises first reaction chamber 1110, second reaction chamber 1120 and the 3rd reaction chamber 1130 that is arranged as a row.The quantity of reaction chamber is not necessarily limited to 3, but can be 2 to 9 or bigger.
Pedestal S is sent in first reaction chamber 1110 through the first reaction chamber gate 1115.The rotary unit (Fig. 2 1112) that upper surface is mounted with pedestal is installed in first reaction chamber 1110.As another embodiment, upper surface is mounted with pedestal but non-rotary base support can be installed in first reaction chamber 1110.
Can in first reaction chamber 1110, carry out the process that substrate is heat-treated.Can in first reaction chamber 1110, form hydrogen atmosphere or such as the mixed-gas atmosphere of hydrogen and nitrogen through gas supply unit 1400.Through utilizing the heater (not shown) that the temperature in first reaction chamber 1110 is controlled at about 1000 to 1200 ℃, can remove foreign matter layer such as the oxide-film on the substrate.
In addition, can in first reaction chamber 1110, carry out the process of growing GaN resilient coating.Can in first reaction chamber 1110, form hydrogen atmosphere through gas supply unit 1400, and gas supply unit 1400 can be imported first reaction chamber 1110 with trimethyl gallium (TMG) and ammonia gas.In addition, can substrate or pedestal be heated to about 450 ℃ to 700 ℃ through heater, more specifically, about 500 ℃ to 600 ℃.Experiencing through this process can the growing GaN resilient coating on the upper surface of heat treated substrate.
As another embodiment, resilient coating can be the AlN layer that comprises aluminium (Al) element and nitrogen (N) element.As another embodiment, if active layer comprises InAlGaN, then resilient coating can comprise the AlGaN layer.
In addition, after the growing GaN resilient coating, can in first reaction chamber 1110, carry out the process of the unadulterated GaN layer of growth.As another embodiment, can in first reaction chamber 1110, carry out the process of unadulterated InGaN layer of growth or unadulterated AlGaN layer.Heat the inside of first reaction chamber 1110, thereby make substrate temperature become about 1000 ℃ to 1200 ℃, more specifically, about 1030 ℃ to 1080 ℃, so that can grow unadulterated GaN layer.The process of grown buffer layer and unadulterated GaN layer can improve the electrical efficiency and the epitaxial growth efficient of GaN film on Sapphire Substrate.
In addition, can in first reaction chamber 1110, carry out the process of growing n-type GaN layer (doping Si or Ge) on the upper surface of unadulterated GaN layer.Can in first reaction chamber 1110, form hydrogen atmosphere through gas supply unit 1400, and gas supply unit 1400 can be input to first reaction chamber 1110 with trimethyl gallium (TMG) and ammonia.In addition, through extra input silane (SiH 4) or germane (GeH 4) Si or Ge can mix.In addition, can substrate or pedestal be heated to about 1000 to 1200 ℃ through heater.Through this process can be on the upper surface of GaN layer growing n-type GaN layer.
As another embodiment, n type GaN layer can have the stepped construction of n-GaN/n-AlGaN/n-InGaN.In addition, as another embodiment, n type layer can have the stepped construction such as n-GaN/n-AlGaN, n-GaN/n-AlGaN/n-GaN or n-GaN/n-InGaN/n-AlGaN/n-GaN.Utilize the vapor deposition processes in the differential responses chamber can in substrate, form n type layer.In addition, as another embodiment, if active layer comprises InAlGaN, then n type layer can comprise the n-AlGaN layer.
Can in second reaction chamber 1120, carry out the process of growth active layer.Can in reaction chamber, form nitrogen (N through gas supply unit 1400 2) atmosphere, and gas supply unit 1400 can be input to reaction chamber 1200 with trimethyl gallium (TMG), trimethyl indium (TMI) and ammonia.In addition, can the temperature of substrate or pedestal be controlled at about 700 ℃ to 900 ℃ through heater.Active layer can be single quantum well (Single Quantum Well, SQW) layer or have a plurality of SQWs MQW (Multi-Quantum Well, MQW) layer.In other words, through repeatedly alternately range upon range of indium (In) and different barrier layer and the quantum well layers of gallium (Ga) content, can form mqw layer.Through this process, the active layer of can on the upper surface of n type GaN layer, growing.Active layer can have the structure such as InGaN QW, InGaN/GaN QW, InGaN/AlGaN QW, InGaN/InGaN QW, GaN/AlGaN QW or InAlGaN/InAlGaN QW.
Can in the 3rd reaction chamber 1130, carry out the process of growing p-type GaN layer (doped with Mg).Can in the 3rd reaction chamber 1130, form hydrogen atmosphere through gas supply unit 1400, and gas supply unit 1400 can be with trimethyl gallium (TMG), two luxuriant magnesium (Cp 2Mg) and ammonia be input to the 3rd reaction chamber 1130.In addition, can the temperature of substrate or pedestal be controlled at about 900 ℃ to 1200 ℃ through the heater (not shown).Through this process, can be on the upper surface of active layer growing p-type GaN layer.P type GaN layer can have the stepped construction such as p-AlGaN/p-GaN, p-AlGaN/p-GaN/p-AlGaN/p-GaN or p-GaN/p-AlGaN/p-GaN.If increase the process of growth AlGaN layer, then gas supply unit can be supplied and form required hydrogen, III family gas (trimethyl aluminium (TMA)) and the V family gas of AlGaN layer.
According to another embodiment, can in the 3rd reaction chamber 1130, carry out annealing process.For example, when the temperature in the reaction chamber remains on 600 to 900 ℃, carry out annealing on the film that forms in the process in front.As another embodiment, can after annealing process, carry out cooling procedure, perhaps can only carry out cooling procedure and do not carry out annealing process.As another embodiment, can in the 3rd reaction chamber, carry out low-energy electron beam radiation treatment process rather than annealing process.As another embodiment, also can in cushion chamber 1200, carry out annealing process.
Then, describe cushion chamber 1200 in detail.Cushion chamber 1200 is couple to a plurality of reaction chambers 1100, and is used as the passage that passes when after pedestal is being removed, sending into other reaction chamber from arbitrary reaction chamber.Before taking out pedestals, can control the temperature of cushion chamber 1200 in advance, thereby make the temperature of temperature and first reaction chamber 1110 and second reaction chamber 1120 of cushion chamber 1200 close from first reaction chamber 1110.In other words, in first reaction chamber 1110, carry out before the heat treatment process, can the temperature in the cushion chamber 1200 be controlled at about 500 to 1200 ℃ in advance, more specifically, about 600 to 900 ℃.Therefore, can reduce the time that is spent with the required temperature heated substrate of heat treatment process.Can under hydrogen atmosphere or nitrogen atmosphere, control the inside of cushion chamber 1200 through hydrogen supply unit 1410 and nitrogen supply (NS) unit 1420 in advance.
Fig. 2 illustrates the schematic cross sectional views of A-A ' section of the chemical vapor depsotition equipment of Fig. 1.
As illustrated in fig. 1 and 2, when opening cushion chamber gate valve 1214, first actuator 1331 passes cushion chamber gate 1213, and therefore the first plate 1350a is admitted to cushion chamber 1200.In addition, robots arm 1340 is loaded into pedestal S among the first plate 1350a in the cushion chamber.
If in arbitrary reaction chamber, carry out the process that forms n type GaN layer, then can the temperature of cushion chamber 1200 be controlled in advance about 500 to 1200 ℃, thereby when from reaction chamber 1100, taking out substrate, reduce thermal shock substrate at about 1200 ℃.In addition, can the gas atmosphere in the cushion chamber 1200 be controlled under the hydrogen atmosphere.
After process in first reaction chamber is accomplished, be arranged on that lifting unit 1119 in the rotary unit 1112 raises and lifting is loaded into the pedestal on the upper surface of rotary unit 1112.In addition, the first plate 1350a is admitted to first reaction chamber 1110, is placed on then between rotary unit 1112 and the pedestal S.In addition, when lifting unit 1119 descended, pedestal S was loaded onto on the first plate 1350a, and first plate is outputed to cushion chamber 1200.
When the first reaction chamber gate valve 1116 in being arranged on first reaction chamber taking-up passage 1110a was opened, the first plate 1350a can pass the first reaction chamber gate 1115, is transferred to cushion chamber 1200 from first reaction chamber 1110 then.
Lifting unit 1380 on the upper surface of strutting piece 1351 can raise, thus the pedestal S (see figure 1) that makes robots arm 1340 to catch to be transferred to cushion chamber 1200.When raising between the recess of lifting unit 1380 at plate and during lifting pedestal S, robots arm 1340 catches pedestal S.In addition, pedestal is loaded onto on the second plate 1350b that is positioned at the second reaction chamber gate, 1125 fronts.
In cushion chamber 1200, install and be used for the cushion chamber temperature is controlled at about 600 to 900 ℃ heater 1203.Heater 1203 can be lamp heater or RF heater.
Be used for being arranged on first reaction chamber 1110 towards the spray head 1111 of pedestal inject process gas.The heater (not shown) that is used for heating base can be installed in rotary unit 1112.Motor 1114 can rotating base S and rotary unit 1112.Pedestal S can separate with the rotary unit 1112 at pivot 1113 tops or combine.
Fig. 3 is the schematic plan view according to second embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention.The description that first embodiment of omission and Fig. 1 repeats.Second embodiment comprises that the method for 3 reaction chambers and transmission pedestal is different with first embodiment.
As shown in Figure 3, actuating unit 2330 comprises actuator 2331, actuator transmission motor 2332 and brake transmission rail 2333.
Actuator 2331 is couple to actuator transmission rail 2333 slidably.Actuator transmission motor 2332 makes actuator 2331 to transmit rail 2333 along actuator and slides.
Through actuator 2331 with pedestal S after first reaction chamber 2110 is fetched into cushion chamber 2200, actuator transmission motor 2332 movement actuators 2331, thus pedestal S is placed on the second cushion chamber front.When movement actuator 2331, transmission pedestal S also is placed on pedestal S in the cushion chamber 2200.Therefore, only utilize an actuator just can substrate be sent into reaction chamber 2100 or cushion chamber 2200.
Fig. 4 is the schematic plan view according to the 3rd embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention.Omit the description that repeats with first embodiment and second embodiment.The 3rd embodiment comprises that the method for 4 reaction chambers and transmission pedestal is different with second embodiment with first embodiment.
As shown in Figure 4, transmitting device can comprise that first robots arm 3706, first robots arm transmit rail 3705, second robots arm 3708, second robots arm and transmit rail 3707, the first plate 3702a, the second plate 3702b, the 3rd plate 3702c, the 4th plate 3702d and roller unit 3701.
Second robots arm 3708 can receive untreated substrate W from substrate feeding unit 3801, picks up substrate, then substrate is loaded on the pedestal.Second robots arm 3708 is couple to second robots arm with the mode that moves slidably and transmits rail 3707.Second robots arm 3708 can pick up treated substrate near the pedestal that is arranged in pedestal retrieval unit 3803, and treated substrate transport is arrived substrate retrieval unit 3804.
First robots arm 3706 picks up pedestal (substrate is loaded on this pedestal from pedestal feeding unit 3802), and pedestal is sent into cushion chamber 3200, and pedestal is loaded on the first plate 3702a.When with treated pedestal when the 4th reaction chamber 3140 is fetched into cushion chamber, first robots arm 3706 picks up the pedestal that is loaded onto on the 4th plate 3702d, and pedestal is fetched into the outside, and pedestal is transferred to pedestal retrieval unit 3803.
Roller unit 3701 is arranged in the cushion chamber 3200 and can the position be set at it and rotates, thereby the first plate 3702a can roll and transmission towards first reaction chamber.Roller unit 3701 comprises a rotatable rollers or a plurality of rotatable rollers.Roller and plate can the gear through wherein combine and are configured to transmit said plate.
Fig. 5 is the schematic plan view according to the 4th embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention.Omit the description that repeats with first to the 3rd embodiment.The 4th embodiment comprises that the method for 4 reaction chambers and transmission pedestal is different with first to the 3rd embodiment.
As shown in Figure 5, transmitting device can comprise substrate supply/discharger 4310, first pick device 4320, first actuator 4331, second actuator 4332, the 3rd actuator 4333, the 4th actuator 4334, the first plate 4350a, the second plate 4350b, the 3rd plate 4350c, the 4th plate 4350d, first robots arm 4340, the second robots arm 4360a, the 3rd robots arm 4360b, the 4th robots arm 4360c and second pick device 4370.
The second robots arm 4360a can be transferred to the pedestal on the upper surface that is loaded in the first plate 4350a in the cushion chamber 4200 upper surface of the second plate 4350b.The lifting unit 4380 that is used to raise or reduces substrate or pedestal is installed under each plate.Therefore, when lifting unit 4380 rose the pedestal on the upper surface that is loaded in the first plate 4350a, the second robots arm 4360a can get between the pedestal and the first plate 4350a.Then, when lifting unit 4380 reduced pedestal, pedestal was placed on the upper surface of the second robots arm 4360a.The 3rd robots arm 4360b can be transferred to the 3rd plate 4350c with the pedestal on the upper surface that is loaded in the second plate 4350b in cushion chamber 4200.Preferably, the second device people arm 4360b to the, four robots arm 4360d can be processed by heat proof material, thereby even also can stably operate them in about 1000 ℃ temperature.
Cushion chamber 4200 is equipped with the first cushion chamber gate 4213, the first cushion chamber gate valve 4214, the second cushion chamber gate 4223 and the second cushion chamber gate valve 4224.
Fig. 6 is the schematic plan view according to the 5th embodiment of the chemical vapor depsotition equipment of execution Method of processing a substrate of the present invention.The 5th embodiment comprises that the method for 6 reaction chambers and transmission pedestal is different with first to fourth embodiment.
As shown in Figure 6, transmitting device comprises substrate supply/discharger 5310, first pick device 5320, actuator 5330, a plurality of plate 5340 and second pick device 5360.Actuator 5330 comprises first to the 6th actuator 5331,5332,5333,5334,5335 and 5336.
Plate 5340 can be attached to actuator 5330 or pull down from actuator 5330.When plate 5340 is loaded onto on the plate transmission unit 5350, when separating with actuator 5330 then, plate transmission unit 5350 along continuous straight runs are towards another reaction chamber transmission board 5340 and pedestal S.Plate transmission unit 5350 can be the device of conveyer belt or similar conveyer belt.The coupling device (not shown) can be arranged on the end of the bar of actuator 5330, thereby makes plate 5340 interosculate with actuator 5330 or separate.Therefore, when after the process in arbitrary reaction chamber is accomplished, taking out plate, control signal is sent to coupling device, so plate 5340 is separated from one another with actuator 5330.
Describe below according to Method of processing a substrate of the present invention.
Fig. 7 is the flow chart that illustrates the Method of processing a substrate that utilizes the chemical vapor depsotition equipment that comprises 9 reaction chambers.The film that forms through this method is formed by resilient coating/unadulterated GaN layer/n type GaN layer/n type AlGaN layer/active layer/p type AlGaN layer/p type GaN layer.Except method shown in Figure 7, can improve and replenish the process kind that in each reaction chamber, to carry out, and can in arbitrary reaction chamber, carry out a plurality of processes.
As shown in Figure 7, at first, carry out the step S101 that substrate is sent into first reaction chamber.Then, carry out in first reaction chamber substrate step of heat treatment S102.The mist of hydrogen or hydrogen and nitrogen can be supplied in first reaction chamber, and can remove the foreign matter layer such as the oxide-film on the substrate through heating (for example about 1200 ℃) substrate or pedestal.
Then, carry out substrate is fetched into cushion chamber from first reaction chamber, then substrate is sent into the step S103 of second reaction chamber.In cushion chamber,, thereby in substrate, do not produce temperature jump in predetermined temperature heated substrate in advance.
Then, carry out the step S104 that in second reaction chamber, on substrate, forms resilient coating.In other words, hydrogen, trimethyl gallium (TMG) and ammonia are input in second reaction chamber, and at predetermined temperature (for example about 600 ℃) heated substrate or pedestal.Through this process, can be on the upper surface of the substrate of having heat-treated the growing GaN resilient coating.
Then, carry out substrate is fetched into cushion chamber and substrate is sent into the step S105 of the 3rd reaction chamber from second reaction chamber.
Then, carry out the step S106 that in the 3rd reaction chamber, in substrate, forms unadulterated GaN layer.In the 3rd reaction chamber, spray hydrogen (H 2), trimethyl gallium (TMG) and ammonia (NH 3), and heated substrate or pedestal are to approximately for example 1200 ℃.Through this process, the unadulterated GaN layer of can on the upper surface of GaN resilient coating, growing.
Then, carry out substrate is fetched into cushion chamber and substrate is sent into the step S107 of the 4th reaction chamber from the 3rd reaction chamber.
Then, carry out the step S108 that in the 4th reaction chamber, in substrate, forms n type GaN layer.In other words, in the 4th reaction chamber, spray hydrogen (H 2), trimethyl gallium (TMG), ammonia (NH 3) and SiH 4, and heated substrate or pedestal are to approximately for example 1200 ℃.Through this process, growing n-type GaN layer (doping Si) on the upper surface of unadulterated GaN layer.
Then, execution is fetched into substrate cushion chamber and substrate is sent into the step S109 the 5th reaction chamber from the 4th reaction chamber.In cushion chamber,, thereby in substrate, do not produce temperature jump in the predetermined temperature heated substrate.Heating-up temperature can be set to about 500 to 1200 ℃ and can be set to about 700 ℃ according to environment.
Then, carry out the step S110 that in the 5th reaction chamber, in substrate, forms n type AlGaN layer.Through with SiH 4, can form the AlGaN layer of doping Si in trimethyl aluminium, trimethyl gallium, ammonia and hydrogen supply to the five reaction chambers.
Then, carry out substrate is fetched into cushion chamber and substrate is sent into the step S111 of the 6th reaction chamber from the 5th reaction chamber.
Then, carry out the step S112 that in the 6th reaction chamber, in substrate, forms active layer.In other words, in the 6th reaction chamber, spray nitrogen (N 2), trimethyl gallium (TMG), trimethyl indium (TMI) and ammonia (NH 3), and with the variable temperatures of substrate or pedestal be controlled at about 700 to 900 ℃.
Then, carry out substrate is fetched into cushion chamber and substrate is sent into the step S113 of the 7th reaction chamber from the 6th reaction chamber.
Then, carry out the step S114 that in the 7th reaction chamber, in substrate, forms p type AlGaN layer.In other words, through supply Cp 2Mg, trimethyl aluminium, trimethyl gallium, ammonia and hydrogen can form the AlGaN layer of doped with Mg.
Then, carry out substrate is fetched into cushion chamber and substrate is sent into the step S115 of the 8th reaction chamber from the 7th reaction chamber.
Then, carry out the step S116 that in the 8th reaction chamber, in substrate, forms p type GaN layer.In the 8th reaction chamber, spray Cp 2Mg, trimethyl gallium, ammonia and hydrogen, and with the variable temperatures of substrate or pedestal be controlled at about 1200 ℃.Through this process, can on the upper surface of active layer, form the GaN layer of doped with Mg.If use Cp 2Mg is as p type impurity gas, and then magnesium component can be attached to the reaction chamber inboard and magnesium component can have adverse effect to other process.Therefore, need carry out cleaning.When cleaning the 8th reaction chamber, can in remaining reaction chamber, carry out each process, and each process is interrupted.
Then, carry out substrate is fetched into cushion chamber and substrate is sent into the step S117 of the 9th reaction chamber from the 8th reaction chamber.
Then, carry out the step S118 that in the 9th reaction chamber, anneals.In other words, when keeping the nitrogen atmosphere state, the control cavity temperature is about 600 to 900 ℃.As another embodiment, can after annealing, in the 9th reaction chamber, carry out cooling procedure, and can in the 9th reaction chamber, carry out cooling procedure and do not carry out annealing.In addition, can in cushion chamber, carry out cooling procedure.Cooling procedure can be the process of natural cooling substrate, for example about 100 to 300 ℃.
Then, pedestal is fetched into the outside, and pick device pick up the substrate at pedestal top and with substrate transport to substrate supply/discharger.
Fig. 8 is the flow chart that illustrates the Method of processing a substrate that utilizes the chemical vapor depsotition equipment that comprises 6 reaction chambers.Although described the example that uses 9 reaction chambers, the example that uses 6 reaction chambers is described below with reference to Fig. 7.The film that forms through this method is formed by resilient coating/n type GaN layer/active layer/p type GaN layer.
At first, carry out the step S201 that substrate is sent into first reaction chamber, in first reaction chamber,, and substrate is fetched into cushion chamber and substrate sent into the step S203 of second reaction chamber from first reaction chamber substrate step of heat treatment S202.
Then, carry out the step S204 that in second reaction chamber, forms resilient coating, and substrate is fetched into cushion chamber and substrate is sent into the step S205 of the 3rd reaction chamber from second reaction chamber.
Then, carry out the step S206 that in the 3rd reaction chamber, forms n type GaN layer, and substrate is fetched into cushion chamber and substrate is sent into the step S207 of the 4th reaction chamber from the 3rd reaction chamber.
Then, carry out the step S208 that in the 4th reaction chamber, in substrate, forms active layer, and substrate is fetched into cushion chamber and substrate is sent into the step S209 the 5th reaction chamber from the 4th reaction chamber.
Then, carry out the step S210 of growing p-type GaN layer in the 5th reaction chamber, and substrate is fetched into cushion chamber and substrate is sent into the step S211 of the 6th reaction chamber from the 5th reaction chamber.If use Cp 2Mg is as p type impurity gas, and then magnesium component can be attached to the reaction chamber inboard and magnesium component can have adverse effect to other process.Therefore, need carry out cleaning.When cleaning the 5th reaction chamber, can in remaining reaction chamber, carry out each process, and each process is interrupted.Then, carry out the step S212 or the cooling step of in the 6th reaction chamber, substrate being annealed.
Simultaneously; If form more complicated stepped construction; Such as by the stepped construction that resilient coating/unadulterated GaN layer/n type GaN layer/n type AlGaN layer/active layer/p type AlGaN layer/p type GaN layer forms, then can use the chemical gaseous phase equipment that comprises at least 6 reaction chambers.In other words, can in second reaction chamber, carry out step that forms resilient coating and the step that forms unadulterated GaN layer.In addition, can in the 3rd reaction chamber, carry out step that forms n type GaN layer and the step that forms n type AlGaN layer.In addition, can in the 5th reaction chamber, carry out step that forms p type AlGaN layer and the step that forms p type GaN layer.
Fig. 9 illustrates the flow chart of the Method of processing a substrate that utilizes the chemical vapor depsotition equipment that comprises 3 reaction chambers.Although described the example that uses 6 reaction chambers with reference to Fig. 8, the following example that uses 3 reaction chambers of describing.The film that forms through this method is formed by resilient coating/n type GaN layer // active layer/p type GaN layer.
At first, carry out the step S301 that substrate is sent into first reaction chamber, and in first reaction chamber to substrate step of heat treatment S302.Then, carry out substrate is fetched into cushion chamber from first reaction chamber, then substrate is sent into the step S303 of second reaction chamber.
Then, carry out the step S304 that in second reaction chamber, on substrate, forms resilient coating, form the step S305 of n type GaN layer, and the step S306 that forms active layer.In addition, carry out substrate is fetched into cushion chamber and substrate is sent into the step S307 of the 3rd reaction chamber from second reaction chamber.
Then, carry out the step S308 of growing p-type GaN layer in the 3rd reaction chamber and the step S309 that anneals.
As another embodiment, can in different reaction chambers, carry out substrate step of heat treatment and the step that forms resilient coating.Through this process separately, can reduce that the temperature in the reaction chamber is controlled at the time that treatment temperature spent that needs, and can solve the problem of next process of gases affect of in a last process, using.
More than description and embodiments of the invention illustrated in the accompanying drawings should not be considered to limit technical spirit of the present invention.Scope of the present invention only is defined by the claims, and those skilled in the art can carry out various forms of improvement and modification to technical spirit of the present invention.Therefore, these improvement and modification will fall within the scope of the invention, as long as they are obvious for a person skilled in the art.

Claims (16)

1. Method of processing a substrate comprises step:
In first chamber, on substrate, form the active layer that comprises III family element and V group element through vapor deposition processes;
Said substrate is transferred to cushion chamber from said first chamber, then with said substrate transport to second chamber that is different from said first chamber; And
In said second chamber, on said substrate, form the p type layer that comprises III family element and V group element through vapor deposition processes.
2. Method of processing a substrate according to claim 1, wherein, said III family element comprises at least a in aluminium (Al), gallium (Ga) and the indium (In).
3. Method of processing a substrate according to claim 1, wherein, said active layer comprises at least a among GaN, InGaN, AlGaN and the InAlGaN.
4. Method of processing a substrate according to claim 1, wherein, said p type layer comprises at least a among p type GaN layer and the p type AlGaN.
5. Method of processing a substrate according to claim 1, wherein:
Said p type layer comprises p type GaN layer and p type AlGaN layer, and
Said p type GaN layer and said p type AlGaN layer are formed on the said substrate through vapor deposition processes in different cavity.
6. Method of processing a substrate according to claim 1, wherein, when with said substrate transport in said second chamber time, the temperature in said second chamber is about 1000 to 1200 ℃.
7. Method of processing a substrate according to claim 1, wherein, the temperature in the said cushion chamber is about 600 to 900 ℃.
8. Method of processing a substrate according to claim 1, wherein, the gas atmosphere in the said cushion chamber is a hydrogen atmosphere.
9. Method of processing a substrate according to claim 1 further comprises step:
Said substrate is transferred to said cushion chamber from said second chamber, then with said substrate transport to the 3rd chamber that is different from said first chamber and said second chamber; And
In said the 3rd chamber, said substrate is annealed.
10. Method of processing a substrate according to claim 1 further comprises step:
Said substrate is transferred to said cushion chamber from said second chamber, then with said substrate transport to the 3rd chamber that is different from said first chamber and said second chamber; And
In said the 3rd chamber, cool off said substrates at 100 to 300 ℃.
11. according to claim 9 or 10 described Method of processing a substrate, wherein, the gas atmosphere in said the 3rd chamber is a nitrogen atmosphere.
12. Method of processing a substrate according to claim 1, wherein:
Before the step that forms said active layer,
Execution forms the step of the n type layer that comprises III family element and V group element on said substrate through vapor deposition processes in the 3rd chamber that is different from said first chamber and said second chamber; And carry out said substrate is transferred to said cushion chamber from said the 3rd chamber, then with the step of said substrate transport to said first chamber, and
After the step that forms said p type layer,
Execution is transferred to said cushion chamber with said substrate from said second chamber, then with the step of said substrate transport to the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 4th chamber.
13. Method of processing a substrate according to claim 1, wherein:
Before the step that forms said active layer,
Execution in the 3rd chamber that is different from said first chamber and said second chamber to said substrate step of heat treatment; Execution is transferred to said cushion chamber with said substrate from said the 3rd chamber, then with the step of said substrate transport to said first chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said first chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said first chamber; And carry out in said first chamber step that on said substrate, forms the n type layer that comprises III family element and V group element through vapor deposition processes, and
After the step that forms said p type layer,
Execution is transferred to said cushion chamber with said substrate from said second chamber, then with the step of said substrate transport to said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
14. Method of processing a substrate according to claim 1, wherein:
Before the step that forms said active layer,
Execution in the 3rd chamber that is different from said first chamber and said second chamber to said substrate step of heat treatment; Execution is transferred to said cushion chamber with said substrate from said the 3rd chamber, then with the step of said substrate transport to the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution forms the step of the n type layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; And carry out said substrate is transferred to said cushion chamber from said the 4th chamber, then with the step of said substrate transport to said first chamber, and
After the step that forms said p type layer,
Execution is transferred to said cushion chamber with said substrate from said second chamber, then with the step of said substrate transport to said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
15. Method of processing a substrate according to claim 1, wherein:
Before the step that forms said active layer,
Execution in the 3rd chamber that is different from said first chamber and said second chamber to said substrate step of heat treatment; Execution is transferred to said cushion chamber with said substrate from said the 3rd chamber, then with the step of said substrate transport to the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution is transferred to said cushion chamber with said substrate from said the 4th chamber, then with the step of said substrate transport to the 5th chamber that is different from said first chamber, said second chamber, said the 3rd chamber and said the 4th chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 5th chamber; Execution forms the step of the n type layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 5th chamber; And carry out said substrate is transferred to said cushion chamber from said the 5th chamber, then with the step of said substrate transport to said first chamber, and
After the step that forms said p type layer,
Execution is transferred to said cushion chamber with said substrate from said second chamber, then with the step of said substrate transport to said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
16. Method of processing a substrate according to claim 1, wherein:
Before the step that forms said active layer,
Execution in the 3rd chamber that is different from said first chamber and said second chamber to said substrate step of heat treatment; Execution is transferred to said cushion chamber with said substrate from said the 3rd chamber, then with the step of said substrate transport to the 4th chamber that is different from said first chamber, said second chamber and said the 3rd chamber; Execution forms the step of the resilient coating that comprises III family element and V group element on said substrate through vapor deposition processes in said the 4th chamber; Execution is transferred to said cushion chamber with said substrate from said the 4th chamber, then with the step of said substrate transport to the 5th chamber that is different from said first chamber, said second chamber, said the 3rd chamber and said the 4th chamber; Execution forms the step of the undoped layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 5th chamber; Execution is transferred to said cushion chamber with said substrate from said the 5th chamber, then with the step of said substrate transport to the 6th chamber that is different from said first chamber, said second chamber, said the 3rd chamber, said the 4th chamber and said the 5th chamber; Execution forms the step of the n type layer that comprises III family element and V group element on said substrate through vapor deposition processes in said the 6th chamber; And carry out said substrate is transferred to said cushion chamber from said the 6th chamber, then with the step of said substrate transport to said first chamber, and
After the step that forms said p type layer,
Execution is transferred to said cushion chamber with said substrate from said second chamber, then with the step of said substrate transport to said the 3rd chamber; And the step of carrying out the said substrate of cooling in said the 3rd chamber.
CN2010800638563A 2009-12-14 2010-07-16 Substrate processing method Pending CN102804412A (en)

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KR1020090124226A KR101062459B1 (en) 2009-12-14 2009-12-14 Metal organic chemical vapor deposition apparatus and metal organic chemical vapor deposition method using the same
KR1020090124224A KR101062463B1 (en) 2009-12-14 2009-12-14 Metal organic chemical vapor deposition apparatus and metal organic chemical vapor deposition method using the same
KR10-2009-0124226 2009-12-14
KR10-2009-0124224 2009-12-14
KR1020090124678A KR101075179B1 (en) 2009-12-15 2009-12-15 Apparatus for metal organic chemical vapor deposition and method using the same
KR10-2009-0124678 2009-12-15
KR1020090135715A KR101078596B1 (en) 2009-12-31 2009-12-31 Method for metal organic chemical vapor deposition
KR10-2009-0135715 2009-12-31
KR10-2009-0135707 2009-12-31
KR1020090135707A KR101071249B1 (en) 2009-12-31 2009-12-31 Method for metal organic chemical vapor deposition
PCT/KR2010/004661 WO2011074754A1 (en) 2009-12-14 2010-07-16 Substrate processing method

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