WO2011066396A2 - Method and apparatus for sensing infrared radiation - Google Patents

Method and apparatus for sensing infrared radiation Download PDF

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Publication number
WO2011066396A2
WO2011066396A2 PCT/US2010/058015 US2010058015W WO2011066396A2 WO 2011066396 A2 WO2011066396 A2 WO 2011066396A2 US 2010058015 W US2010058015 W US 2010058015W WO 2011066396 A2 WO2011066396 A2 WO 2011066396A2
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WO
WIPO (PCT)
Prior art keywords
led
sensing
layer
hole
electrode
Prior art date
Application number
PCT/US2010/058015
Other languages
French (fr)
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WO2011066396A3 (en
Inventor
Franky So
Do Young Kim
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University Of Florida Research Foundation, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020127016506A priority Critical patent/KR101815072B1/en
Priority to US13/511,869 priority patent/US8796699B2/en
Priority to BR112012012249A priority patent/BR112012012249A2/en
Priority to RU2012126145/28A priority patent/RU2012126145A/en
Priority to JP2012541194A priority patent/JP5769724B2/en
Priority to CA2781432A priority patent/CA2781432A1/en
Application filed by University Of Florida Research Foundation, Inc. filed Critical University Of Florida Research Foundation, Inc.
Priority to EP10833930.0A priority patent/EP2504675A4/en
Priority to CN201080057963.5A priority patent/CN102725616B/en
Priority to AU2010324764A priority patent/AU2010324764A1/en
Publication of WO2011066396A2 publication Critical patent/WO2011066396A2/en
Publication of WO2011066396A3 publication Critical patent/WO2011066396A3/en
Priority to US14/176,572 priority patent/US9006752B2/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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    • H10K50/00—Organic light-emitting devices
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
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    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
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    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
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    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy

Definitions

  • Typical night vision goggles are complex electro-optical devices that intensify existing light instead of relying on their own light source.
  • Night vision goggles can be sensitive to a broad spectrum of light, from visible through infrared.
  • a conventional lens called the objective lens, captures ambient light and some near-infrared light.
  • the gathered light is then sent to an image-intensifier tube.
  • the tube outputs a high voltage, typically about 5,000 volts, to the tube components.
  • the image- intensifier tube can use a photo cathode to convert the photons of light energy into electrons.
  • MCP micro channel plate
  • the image-intensifier tube can be positioned so that at the end of the tube, the cascaded electrons hit a screen coated with phosphors. These electrons maintain their position in relation to the channel they passed through. The energy of the electrons causes the phosphors to reach an excited state and release photons. These phosphors create the green image on the screen that has come to characterize night vision. Since the electrons stay in the same alignment as the original photons, a reliable image can be produced. The green phosphor image can be viewed through another lens, called the ocular lens that allows you to magnify and focus the image.
  • the night vision device can be connected to an electronic display, such as a monitor, or the image can be viewed directly through the ocular lens.
  • N1R near infrared
  • one NIR-to-visible light up-conversion device that integrates a light-emitting diode (LED) with a semiconductor based photodetector has only exhibited a maximum external conversion efficiency of 0.048 (4.8%) W/W. Even a hybrid organic/inorganic up-conversion device that integrates an inorganic InGaAs/TnP photodetector with an organic light- emitting diode (OLED) only exhibits an external conversion efficiency of 0.7% W/W.
  • current inorganic and hybrid up-conversion devices are expensive to fabricate and the processes used for fabricating these devices are not compatible with large area applications.
  • Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. Specific embodiments for sensing IR radiation provide improved dark current characteristics.
  • An embodiment can incorporate an all-organic device.
  • an all-organic up-conversion device is provided that can be fabricated by integrating an organic light emitting device (OLED) and an organic photodetector into one device.
  • An IR sensing layer of an OLED in accordance with an embodiment of the invention can be formed of a poor hole transporting layer.
  • the IR sensing layer can be incorporated with an OLED to provide TR-to-visible color up-conversion.
  • a night vision device can be fabricated by depositing a few- layers of organic thin films.
  • Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices.
  • Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device.
  • all electrodes are transparent to infrared light.
  • Figure 1 shows an energy band diagram of an infrared sensing up-conversion device in accordance with an embodiment of the subject invention.
  • Figure 2 shows a device structure in accordance with an embodiment of the subject invention that allows an electron to generate multiple photons.
  • FIG. 3 shows the operation of an up-conversion device in accordance with an embodiment of the subject invention.
  • Figure 4 shows an energy band diagram of another infrared sensing up-conversion device in accordance with an embodiment of the subject invention.
  • Figure 5 shows a structural diagram of the device of Figure 4.
  • Figures 6A and 6B show the light-current- voltage characteristics of the device of Figure 4, where Figure 6A shows the characteristics when the device is dark and Figure 6B shows the characteristics when the device is exposed to infrared radiation.
  • Figures 7A and 7B show the current efficiency of a control organic light emitting device (Figure 7A) and the device of Figure 4 ( Figure 7B).
  • Figure 8 A shows the absorbance spectra of a 100 nm thick neat SnPc film and a 100 nm thick SnPc:C 60 mixed film in accordance with an embodiment of the subject invention.
  • Figure 8B shows the dark I-V characteristics of the control OLED (shown in the inset of Figure 7 A) and two up-conversion devices in accordance with embodiments of the subject invention, where one device has a 100 nm thick neat SnPc film and the other device has a 100 nm thick SnPc:C6o mixed film.
  • Figure 9A shows light-current-voltage characteristics of air infrared-to-green light up- conversion device according to an embodiment of the subject invention under dark and photo (infrared) irradiation.
  • Figure 9B shows a plot of the on/off ratio as a function of current densities for an infrared-to-green light up-conversion device in accordance with an embodiment of the subject invention.
  • Figures 10A and 10B show the photon-to-photon conversion efficiency of the device of Figure 5 ( Figure 1 1 A) and the quantum efficiency of another embodiment of the subject invention ( Figure 1 IB).
  • Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation.
  • An embodiment of the present invention provides an all-organic up- conversion device that can be fabricated by integrating an OLED and an organic photodetector into one device. Because of their compatibility with lightweight, rugged, or flexible plastic substrates, all organic up-conversion devices in accordance with embodiments of the present invention can be used for numerous applications including, but not limited to, night vision, range finding, security, and semiconductor wafer inspections.
  • a night vision device can be fabricated by depositing a few layers of organic thin films.
  • Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices.
  • all electrodes arc transparent to infrared light.
  • the wavelength of the imaging device for thermal imaging can be adjusted by material selection.
  • the imaging device includes an infrared absorbing layer that has 3 layers, which are IR sensitive.
  • An embodiment can incorporate a tandem light emitting device (LED) including multiple LED's in a stack.
  • one photon enters the imaging device and passes through five LED's in a stack, generating five photons as output.
  • the five LED's stacked together uses a higher voltage than a single LED, but can still allow the device to operate at a low voltage.
  • the five stacked LED's can also make the imaging device thicker than a device with a single LED and, therefore, less sensitive to noise.
  • Figure 1 shows an energy band diagram of an IR sensing up-conversion device which can be incorporated in an embodiment of the subject invention.
  • Embodiments of an IR sensing device such as the device shown in Figure 1 , in accordance with the subject invention can have two parts, an IR sensitizer, or IR sensing layer, and a light emitting device.
  • the maximum quantum efficiency of the device shown in Figure 1 is 100%.
  • the device in order to enhance performance, is fabricated with a tandem structure.
  • Figure 2 shows a device having such a tandem structure, incorporating an IR sensing layer and an LED, in accordance with an embodiment of the subject invention. With this structure, one electron can generate multiple photons. Incorporating this device architecture, the output of the device can be enhanced to achieve gain. Due to the increase thickness of the device, the dark current can be lowered and the device performance substantially improved.
  • Figure 3 shows the operation of an up-conversion device in accordance with an embodiment of the subject invention.
  • light with an IR wavelength can enter the device through a transparent or semi-transparent substrate, such as glass or other appropriate transparent or semi-transparent material.
  • a photon can then pass through a first transparent (or semi-transparent) electrode and strike an IR sensing layer.
  • the IR sensing layer can be sensitive for the range 0.8 ⁇ -2 ⁇ in a specific embodiment.
  • the IR sensing layer can be sensitive to wavelengths in the range of 700 nm to 14 ⁇ , in the range of 1 ⁇ to 4 ⁇ , and in the range of 1 ⁇ to 3 ⁇ .
  • the IR sensing layer can then produce carriers, such as electrons and holes, such that the electrons, or holes, are passed to a stack of LEDs.
  • carriers such as electrons and holes, such that the electrons, or holes, are passed to a stack of LEDs.
  • OLEDs organic light emitting devices
  • the LEDs are transparent or semi-transparent.
  • the charge separation layer between the first and second LED (OLED 1 and OLED 2 in Figure 3) an electron and a hole are generated, such that the hole can enter the first LED and combine with an electron entering the first LED from the IR sensing layer to produce a photon.
  • five LEDs are shown in series, therefore five photons can be generated for each photon which enters the device.
  • the LEDs can be identical or can be different. As discussed below, the LEDs can be produced as thin films. Therefore, multiple LEDs can be stacked without producing an unwieldy device. In a particular embodiment, three to eight LEDs can be stacked in series. In further embodiments, more LEDs can be stacked. As additional LEDs are stacked, noise can be reduced even if the gain is not as high.
  • a hole blocking layer (not shown in Figure 3) can be added between the transparent electrode the IR radiation enters and the IR sensing layer.
  • a layer can block holes from passing from the transparent electrode to the IR sensing layer and/or from the IR sensing layer to the transparent electrode.
  • Specific embodiments incorporating such a hole blocking layer can utilize ZnO nanoparticles, Ti0 2 nanoparticles, or other appropriate materials known in the art.
  • the ZnO nanoparticles or T1O 2 particles, and/or a ZnO layer or TiO? layer can be deposited on the transparent electrode prior to adding the IR sensing layer.
  • a second transparent (or semi- transparent) electrode, or cathode can be disposed on the other side of the LED stack.
  • a potential between the pair of electrodes can drive the carriers, such as holes, from the IR sensing layer into the first LED and holes from each charge separation layer, where electrons and holes arc generated, into the LED toward the cathode electrode.
  • electrons injected by the cathode are driven into the fifth LED and the electrons generated in the charge separation (generation) layers are driven into the LED toward the anode.
  • Transparent electrodes can be produced by replacing reflective electrode materials (such as aluminum) with transparent materials (such as indium-tin oxide).
  • a layered CsCOa (1 nm)/Ag (10 nm)/ITO (100 nm) electrode is used as the top electrode.
  • the CsCO . ; interlayer lowers the cathode work- function to match the conduction (LUMO) energy of Phenyl-C61 -Butyric-Acid-Methyl-Ester (PCBM), a material that can be used as part of the OLED.
  • the thin Ag layer provides conductivity and the ITO layer provides encapsulation.
  • Embodiments of this thin film stack have a 90% optical transmission and sheet resistance less than 5 ohm/sq, which is 70% lower than typical ITO electrodes.
  • a thin film of MgAg or ITO can be utilized as a transparent electrode, for example a transparent electrode in contact with the last light emitting device.
  • the thin film can be 20 nm thick or less in a specific embodiment.
  • an organic emissive layer includes three different dye molecules emitting blue, green, and red lights, respectively.
  • white light with high color rendering index >90 can be achieved.
  • different colors are achieved by varying the relative abundance of the three dye molecules or by varying the power transmitted to the different molecules.
  • a transparent material such as indium-tin oxide
  • a transparent material can again be used as the cathode.
  • photons can pass through the stacked OLEDs.
  • the organic materials used in these devices are mostly transparent in the visible spectrum due to the high band gap of these materials (typically > 3 eV).
  • Exceptions can include the dye molecules from which the desired light emission is generated; however, the dye molecules can be incorporated as dopants (typical doping concentrations -1-10 wt%) in the emissive layer whose thickness is typically 10-30 nm. Therefore, the entire OLED device can achieve a very high transparency of 90% or higher.
  • the damage to the underlying organic layers can be minimized during the sputter deposition of the indium-tin oxide transparent cathode.
  • low sheet resistance, and high transparency can be obtained for the transparent electrode, and efficient charge injection at the electrode/organic interface can be achieved.
  • a composite electrode of CsC0 3 /Ag/ITO can also be used as the transparent electrode for the OLEDs.
  • a microlens array can also be fabricated on the substrate surface to enhance the extraction of light in that direction.
  • OLEDs can be produced that offer high quality lighting with a color rendering index larger than 90.
  • the electrodes and LEDs used are transmissive for some wavelengths of light and absorb other wavelengths.
  • the light sensing layer can incorporate quantum dots such as PbSe and PbS quantum dots.
  • the subject up-conversion devices can be incorporated into night vision goggles or other light amplifying devices.
  • green OLEDs are used so that a green amplified image as produced as with conventional night vision goggles.
  • Figure 4 shows an energy band diagram of another IR sensing up-conversion device in accordance with an embodiment of the subject invention.
  • a poor hole injection and transport layer can be incorporated in the TR sensing up-conversion device to improve dark current characteristics.
  • a material can be chosen for the hole injection and transport layer that has a current density of less than 1 niA/cm 2 .
  • materials with current densities greater than or equal to 1 mA/cm 2 can be used for the hole injection and transport layer, which would increase the injection of holes from the electrode when a voltage is applied so as to increase the dark current and reduce SNR.
  • a SnPc:C (l o mixed layer, which exhibits poor hole injection and hole transport, allows the device to have a low dark current without IR irradiation.
  • the OLED can be essentially tumed-off when it is not exposed to IR radiation.
  • Figure 5 shows a structural diagram of the device of Figure 4.
  • an organic near infrared (NIR)-to-visible up-conversion device can be provided using a tin phthalocyanine (SnPc):C6o bulk hetero structure layer as a NIR sensitizer and a fac-tris(2phenylpyridinato) iridium (III) (lrppy 3 ) layer as a phosphorescent emitter.
  • NIR near infrared
  • SnPc tin phthalocyanine
  • C6o bulk hetero structure layer as a NIR sensitizer
  • fac-tris(2phenylpyridinato) iridium (III) (lrppy 3 ) layer as a phosphorescent emitter.
  • the up-conversion device incorporates a poor hole transport NIR-sensitizing layer to keep the device in the off-state in the absence of IR irradiation.
  • the photo-generated holes are injected into the OLED and recombine with electrons injected from the cathode to give off visible light.
  • Figures 6A and 6B show the light-current-voltage (L-I-V) characteristics of the device of Figure 5.
  • CuPc: ⁇ 7 x lO "4 cm 2 /Vs.
  • SnPc: 3 ⁇ 4 2 x 10 "10 cm 2 /Vs.
  • Figure 6A shows the characteristics when the device is not exposed to any infrared light.
  • the open circle is current density and the closed circle is luminescence.
  • emission was not observed until 13 V.
  • the high turn-on voltage in this embodiment is due to the poor hole injection from the SnPc:C 0 layer.
  • Figure 6B shows the characteristics when the device is exposed to IR radiation.
  • An 830 nm laser with 14 mW/cm 2 was used to irradiate the device.
  • the OLED was turned on at 2.7 V with infrared illumination from the laser.
  • the maximum on/off ratio exceeded 1400 at 12.7 V.
  • Figures 7A and 7B show the current efficiency of a control organic light emitting device (Figure 7A) and the device of Figure 4 ( Figure 7B). As shown, in this embodiment, the current efficiency under IR illumination is more than 100 cd/A. The higher current efficiency indicates that the control OLED is still charge imbalanced and slightly electron dominant.
  • a SnPc:C 6 o bulk heterostracture layer is used for the poor hole transport IR sensitizing layer because of its strong IR absorption, as shown in Figure 8A, and its poor hole transport property, as shown in Figure 8B.
  • Figure 8B shows the dark current-voltage (I-V) characteristics of the control OLED (see inset of Figure 7A) and up-conversion devices with NIR sensitizing layers in accordance with embodiments of the present invention.
  • the addition of the neat SnPc layer increases the turn-on voltage from 3 V to about 5 V and the operating voltages across the measurement range also increases by about 2 V, indicating the poor hole transport properties of SnPc.
  • the addition of the SnPc:C6o mixed film further increases the operation voltage by another 2 V.
  • the up-conversion device with the SnPc:C 6 o mixed layer shows a significant reduction of hole current.
  • Figure 9A shows the luminescence-current- voltage (L-I-V) characteristics of the N1R- to-green up-conversion device with the SnPc: Ceo mixed film as a poor hole transport NIR- sensitizing layer according to an embodiment of the present invention. Without infrared light irradiation, emission was not detected until the voltage reaches 13 V, showing the maximum luminance (1 cd/m2) at 15 V. The high turn-on voltage indicates the poor hole transport from the SnPc:C 6 o mixed layer. The current may be dominated by electrons injected from the cathode contact.
  • the device Upon irradiation with NIR light, the device was turned on at 2.7 V along with on an onset of green light emission, showing a luminance of 853 cd/m2 at 15 V. Therefore, the switching effect by IR light is significant as shown in Figure 9B, which provides the on/off ratio at different voltages. As shown, the maximum on/off ratio of luminescence intensity was about 1400 at 12.7 V.
  • Figures 10A and 10B show the photon-to-photon conversion efficiency of the device of Figure 4 ( Figure 10A) and the quantum efficiency (QE) of another embodiment of the subject invention ( Figure 10B).
  • the photon-to-photon conversion efficiency ( ⁇ ⁇ ) ⁇ incident IR light photons to emitted green light photons can be calculated by the following equation:
  • h Planks constant
  • c the speed of light
  • ⁇ the photon wavelength
  • I PhO t 0 the photocurrent
  • / the fraction of photons reaching the sensitizing layer
  • R( ) the responsivity of the photodetector
  • ⁇ 3 ⁇ 4 the incident infrared wavelength
  • P 1R the incident infrared power.
  • the whole photodetector structure is not used. Rather, the IR absorbing layer is used as the hole injection layer. Therefore, the exact external quantum efficiency is not measured from injecting IR light to extracting charge carriers. However, the external quantum efficiency is measured indirectly by making this photodetector structure.
  • a 20 nm thick SnPc:C 6 o mixed layer is used alone, and the 830 nm IR laser with 14 mW/cm2 is used for the IR source. In a same IR irradiation and same IR absorbing layer thickness, 5-20% external quantum efficiency (EQE) was obtained.
  • the EQE of the Irppy 3 based OLED is roughly 20% in the literature. Therefore, the calculated conversion efficiency is about 1-4% and it is consistent with the experimental conversion efficiency. This conversion efficiency is roughly 10 times higher than that of the rcd-to-green up-conversion devices.
  • any reference in this specification to "one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

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Abstract

Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.

Description

DESCRIPTION
METHOD AND APPARATUS FOR SENSING INFRARED RADIATION
CROSS REFERENCE TO RELATED APPLICATION
The present application claims the benefit of U.S. Provisional Application Serial No. 61/264,071 , filed November 24, 2009, which is hereby incorporated by reference herein in its entirety, including any figures, tables, or drawings.
BACKGROUND OF INVENTION
Existing night vision goggles require very high operating voltages and cost thousands of dollars. Typical night vision goggles are complex electro-optical devices that intensify existing light instead of relying on their own light source. Night vision goggles can be sensitive to a broad spectrum of light, from visible through infrared. In a typical configuration, a conventional lens, called the objective lens, captures ambient light and some near-infrared light. The gathered light is then sent to an image-intensifier tube. The tube outputs a high voltage, typically about 5,000 volts, to the tube components. The image- intensifier tube can use a photo cathode to convert the photons of light energy into electrons. As the electrons pass through the tube, more electrons can be released from atoms in the tube, multiplying the original number of electrons by a factor of thousands. One method to accomplish this multiplication is through the use of a micro channel plate (MCP). The MCP is positioned in the tube such that when the electrons from the photo cathode hit the first electrode of the MCP, they can be accelerated into the glass micro channels by high voltage (about 5,000 Volts) bursts being sent between the electrodes of the electrode pair. As electrons pass through the micro channels, they cause other electrons to be released in each channel using a process called cascaded secondary emission. These new electrons can also collide with other atoms, creating a chain reaction that can result in thousands of electrons leaving the channel where only a few entered.
The image-intensifier tube can be positioned so that at the end of the tube, the cascaded electrons hit a screen coated with phosphors. These electrons maintain their position in relation to the channel they passed through. The energy of the electrons causes the phosphors to reach an excited state and release photons. These phosphors create the green image on the screen that has come to characterize night vision. Since the electrons stay in the same alignment as the original photons, a reliable image can be produced. The green phosphor image can be viewed through another lens, called the ocular lens that allows you to magnify and focus the image. The night vision device can be connected to an electronic display, such as a monitor, or the image can be viewed directly through the ocular lens.
Recently, light up-conversion devices have attracted a great deal of research interest because of their potential applications in night vision, range finding, and security, as well as semiconductor wafer inspections. Early near infrared (N1R) up-conversion devices were mostly based on the heteroj nction structure of inorganic semiconductors. These devices consist of two parts in series: one part for photodetection and another for luminescence. The up-conversion devices are mainly distinguished by the method of photodetection. However, the up-conversion efficiencies of recent devices continue to be very low. For example, one NIR-to-visible light up-conversion device that integrates a light-emitting diode (LED) with a semiconductor based photodetector has only exhibited a maximum external conversion efficiency of 0.048 (4.8%) W/W. Even a hybrid organic/inorganic up-conversion device that integrates an inorganic InGaAs/TnP photodetector with an organic light- emitting diode (OLED) only exhibits an external conversion efficiency of 0.7% W/W. In addition, current inorganic and hybrid up-conversion devices are expensive to fabricate and the processes used for fabricating these devices are not compatible with large area applications.
BRIEF SUMMARY
Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. Specific embodiments for sensing IR radiation provide improved dark current characteristics. An embodiment can incorporate an all-organic device. In one embodiment, an all-organic up-conversion device is provided that can be fabricated by integrating an organic light emitting device (OLED) and an organic photodetector into one device. An IR sensing layer of an OLED in accordance with an embodiment of the invention can be formed of a poor hole transporting layer. In certain embodiments, the IR sensing layer can be incorporated with an OLED to provide TR-to-visible color up-conversion.
In a specific embodiment, a night vision device can be fabricated by depositing a few- layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light.
BRIEF DESCRIPTION OF DRAWINGS
Figure 1 shows an energy band diagram of an infrared sensing up-conversion device in accordance with an embodiment of the subject invention.
Figure 2 shows a device structure in accordance with an embodiment of the subject invention that allows an electron to generate multiple photons.
Figure 3 shows the operation of an up-conversion device in accordance with an embodiment of the subject invention.
Figure 4 shows an energy band diagram of another infrared sensing up-conversion device in accordance with an embodiment of the subject invention.
Figure 5 shows a structural diagram of the device of Figure 4.
Figures 6A and 6B show the light-current- voltage characteristics of the device of Figure 4, where Figure 6A shows the characteristics when the device is dark and Figure 6B shows the characteristics when the device is exposed to infrared radiation.
Figures 7A and 7B show the current efficiency of a control organic light emitting device (Figure 7A) and the device of Figure 4 (Figure 7B).
Figure 8 A shows the absorbance spectra of a 100 nm thick neat SnPc film and a 100 nm thick SnPc:C60 mixed film in accordance with an embodiment of the subject invention.
Figure 8B shows the dark I-V characteristics of the control OLED (shown in the inset of Figure 7 A) and two up-conversion devices in accordance with embodiments of the subject invention, where one device has a 100 nm thick neat SnPc film and the other device has a 100 nm thick SnPc:C6o mixed film.
Figure 9A shows light-current-voltage characteristics of air infrared-to-green light up- conversion device according to an embodiment of the subject invention under dark and photo (infrared) irradiation.
Figure 9B shows a plot of the on/off ratio as a function of current densities for an infrared-to-green light up-conversion device in accordance with an embodiment of the subject invention. Figures 10A and 10B show the photon-to-photon conversion efficiency of the device of Figure 5 (Figure 1 1 A) and the quantum efficiency of another embodiment of the subject invention (Figure 1 IB).
DETAILED DISCLOSURE
Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. An embodiment of the present invention provides an all-organic up- conversion device that can be fabricated by integrating an OLED and an organic photodetector into one device. Because of their compatibility with lightweight, rugged, or flexible plastic substrates, all organic up-conversion devices in accordance with embodiments of the present invention can be used for numerous applications including, but not limited to, night vision, range finding, security, and semiconductor wafer inspections.
In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. In a specific embodiment, all electrodes arc transparent to infrared light.
The wavelength of the imaging device for thermal imaging can be adjusted by material selection. In a particular embodiment, the imaging device includes an infrared absorbing layer that has 3 layers, which are IR sensitive. An embodiment can incorporate a tandem light emitting device (LED) including multiple LED's in a stack. In a particular embodiment, one photon enters the imaging device and passes through five LED's in a stack, generating five photons as output. The five LED's stacked together uses a higher voltage than a single LED, but can still allow the device to operate at a low voltage. The five stacked LED's can also make the imaging device thicker than a device with a single LED and, therefore, less sensitive to noise.
Figure 1 shows an energy band diagram of an IR sensing up-conversion device which can be incorporated in an embodiment of the subject invention.
Embodiments of an IR sensing device, such as the device shown in Figure 1 , in accordance with the subject invention can have two parts, an IR sensitizer, or IR sensing layer, and a light emitting device. In an embodiment, the maximum quantum efficiency of the device shown in Figure 1 is 100%. In an embodiment of the invention, in order to enhance performance, the device is fabricated with a tandem structure. Figure 2 shows a device having such a tandem structure, incorporating an IR sensing layer and an LED, in accordance with an embodiment of the subject invention. With this structure, one electron can generate multiple photons. Incorporating this device architecture, the output of the device can be enhanced to achieve gain. Due to the increase thickness of the device, the dark current can be lowered and the device performance substantially improved.
Figure 3 shows the operation of an up-conversion device in accordance with an embodiment of the subject invention. As shown, light with an IR wavelength can enter the device through a transparent or semi-transparent substrate, such as glass or other appropriate transparent or semi-transparent material. A photon can then pass through a first transparent (or semi-transparent) electrode and strike an IR sensing layer. The IR sensing layer can be sensitive for the range 0.8 μιη-2 μηι in a specific embodiment. In further specific embodiments, the IR sensing layer can be sensitive to wavelengths in the range of 700 nm to 14 μιτι, in the range of 1 μιτι to 4 μιη, and in the range of 1 μιη to 3 μηι. The IR sensing layer can then produce carriers, such as electrons and holes, such that the electrons, or holes, are passed to a stack of LEDs. In Figure 3, organic light emitting devices (OLEDs) are shown but other light emitting devices can be used with the subject invention. In a particular embodiment the LEDs are transparent or semi-transparent. When the carriers, such as electrons, from the IR sensing layer enters the first LED (OLED in Figure 3) and combine with corresponding carriers, such as holes, a photon can be generated and passed through the device. In the charge separation layer between the first and second LED (OLED 1 and OLED 2 in Figure 3) an electron and a hole are generated, such that the hole can enter the first LED and combine with an electron entering the first LED from the IR sensing layer to produce a photon. Here, five LEDs are shown in series, therefore five photons can be generated for each photon which enters the device. The LEDs can be identical or can be different. As discussed below, the LEDs can be produced as thin films. Therefore, multiple LEDs can be stacked without producing an unwieldy device. In a particular embodiment, three to eight LEDs can be stacked in series. In further embodiments, more LEDs can be stacked. As additional LEDs are stacked, noise can be reduced even if the gain is not as high.
Referring to Figure 3, in a speci fic embodiment, a hole blocking layer (not shown in Figure 3) can be added between the transparent electrode the IR radiation enters and the IR sensing layer. Such a layer can block holes from passing from the transparent electrode to the IR sensing layer and/or from the IR sensing layer to the transparent electrode. Specific embodiments incorporating such a hole blocking layer can utilize ZnO nanoparticles, Ti02 nanoparticles, or other appropriate materials known in the art. The ZnO nanoparticles or T1O2 particles, and/or a ZnO layer or TiO? layer, can be deposited on the transparent electrode prior to adding the IR sensing layer.
As shown in Figure 3, in a specific embodiment a second transparent (or semi- transparent) electrode, or cathode, can be disposed on the other side of the LED stack. In this embodiment, a potential between the pair of electrodes can drive the carriers, such as holes, from the IR sensing layer into the first LED and holes from each charge separation layer, where electrons and holes arc generated, into the LED toward the cathode electrode. Likewise, electrons injected by the cathode are driven into the fifth LED and the electrons generated in the charge separation (generation) layers are driven into the LED toward the anode.
Transparent electrodes can be produced by replacing reflective electrode materials (such as aluminum) with transparent materials (such as indium-tin oxide). In one embodiment of the subject invention, a layered CsCOa (1 nm)/Ag (10 nm)/ITO (100 nm) electrode is used as the top electrode. The CsCO.; interlayer lowers the cathode work- function to match the conduction (LUMO) energy of Phenyl-C61 -Butyric-Acid-Methyl-Ester (PCBM), a material that can be used as part of the OLED. The thin Ag layer provides conductivity and the ITO layer provides encapsulation. Embodiments of this thin film stack have a 90% optical transmission and sheet resistance less than 5 ohm/sq, which is 70% lower than typical ITO electrodes. In a specific embodiment, a thin film of MgAg or ITO can be utilized as a transparent electrode, for example a transparent electrode in contact with the last light emitting device. The thin film can be 20 nm thick or less in a specific embodiment.
OLEDs can be produced that generate any wavelength of visible light. In one embodiment, an organic emissive layer includes three different dye molecules emitting blue, green, and red lights, respectively. By controlling the relative abundance of the three dye molecules in the device, white light with high color rendering index >90 can be achieved. In another embodiment, different colors are achieved by varying the relative abundance of the three dye molecules or by varying the power transmitted to the different molecules.
For transparent OLEDs, a transparent material (such as indium-tin oxide) can again be used as the cathode. In this way, photons can pass through the stacked OLEDs. The organic materials used in these devices are mostly transparent in the visible spectrum due to the high band gap of these materials (typically > 3 eV). Exceptions can include the dye molecules from which the desired light emission is generated; however, the dye molecules can be incorporated as dopants (typical doping concentrations -1-10 wt%) in the emissive layer whose thickness is typically 10-30 nm. Therefore, the entire OLED device can achieve a very high transparency of 90% or higher.
In fabricating transparent OLEDs with triple-doped organic emissive layers, the damage to the underlying organic layers can be minimized during the sputter deposition of the indium-tin oxide transparent cathode. In addition, low sheet resistance, and high transparency can be obtained for the transparent electrode, and efficient charge injection at the electrode/organic interface can be achieved. As discussed above, a composite electrode of CsC03/Ag/ITO can also be used as the transparent electrode for the OLEDs. Furthermore, a microlens array can also be fabricated on the substrate surface to enhance the extraction of light in that direction. Moreover, OLEDs can be produced that offer high quality lighting with a color rendering index larger than 90.
In a further embodiment, the electrodes and LEDs used are transmissive for some wavelengths of light and absorb other wavelengths.
According to certain embodiments, the light sensing layer can incorporate quantum dots such as PbSe and PbS quantum dots.
In a particular embodiment, the subject up-conversion devices can be incorporated into night vision goggles or other light amplifying devices. In a further embodiment, green OLEDs are used so that a green amplified image as produced as with conventional night vision goggles.
Figure 4 shows an energy band diagram of another IR sensing up-conversion device in accordance with an embodiment of the subject invention. According to an embodiment, a poor hole injection and transport layer can be incorporated in the TR sensing up-conversion device to improve dark current characteristics. In specific embodiments, in order to reduce dark currents and, therefore, improve SNR, a material can be chosen for the hole injection and transport layer that has a current density of less than 1 niA/cm2. in less preferred embodiments, materials with current densities greater than or equal to 1 mA/cm2 can be used for the hole injection and transport layer, which would increase the injection of holes from the electrode when a voltage is applied so as to increase the dark current and reduce SNR. In one embodiment, a SnPc:C(lo mixed layer, which exhibits poor hole injection and hole transport, allows the device to have a low dark current without IR irradiation. In this embodiment, the OLED can be essentially tumed-off when it is not exposed to IR radiation.
Figure 5 shows a structural diagram of the device of Figure 4.
Referring to Figure 5, an organic near infrared (NIR)-to-visible up-conversion device can be provided using a tin phthalocyanine (SnPc):C6o bulk hetero structure layer as a NIR sensitizer and a fac-tris(2phenylpyridinato) iridium (III) (lrppy3) layer as a phosphorescent emitter. By using a phosphorescent emitter, light generation can be accomplished using low energy, providing an energy-efficient OLED. As one difference from a conventional OLED structure, the up-conversion device according to an embodiment of the present invention incorporates a poor hole transport NIR-sensitizing layer to keep the device in the off-state in the absence of IR irradiation. Upon photo-excitation, the photo-generated holes are injected into the OLED and recombine with electrons injected from the cathode to give off visible light.
Figures 6A and 6B show the light-current-voltage (L-I-V) characteristics of the device of Figure 5. CuPc: μ^ = 7 x lO"4 cm2/Vs. SnPc: ¾ = 2 x 10"10 cm2/Vs. Figure 6A shows the characteristics when the device is not exposed to any infrared light. The open circle is current density and the closed circle is luminescence. As shown, in this embodiment, without infrared light irradiation, emission was not observed until 13 V. As discussed above, the high turn-on voltage in this embodiment is due to the poor hole injection from the SnPc:C 0 layer.
Figure 6B shows the characteristics when the device is exposed to IR radiation. An 830 nm laser with 14 mW/cm2 was used to irradiate the device. As shown, in this embodiment, the OLED was turned on at 2.7 V with infrared illumination from the laser. The maximum on/off ratio exceeded 1400 at 12.7 V.
Figures 7A and 7B show the current efficiency of a control organic light emitting device (Figure 7A) and the device of Figure 4 (Figure 7B). As shown, in this embodiment, the current efficiency under IR illumination is more than 100 cd/A. The higher current efficiency indicates that the control OLED is still charge imbalanced and slightly electron dominant.
According to certain embodiments of the present invention, a SnPc:C6o bulk heterostracture layer is used for the poor hole transport IR sensitizing layer because of its strong IR absorption, as shown in Figure 8A, and its poor hole transport property, as shown in Figure 8B. Figure 8B shows the dark current-voltage (I-V) characteristics of the control OLED (see inset of Figure 7A) and up-conversion devices with NIR sensitizing layers in accordance with embodiments of the present invention. The addition of the neat SnPc layer increases the turn-on voltage from 3 V to about 5 V and the operating voltages across the measurement range also increases by about 2 V, indicating the poor hole transport properties of SnPc. The addition of the SnPc:C6o mixed film further increases the operation voltage by another 2 V. Compared with the controlled OLED device, the up-conversion device with the SnPc:C6o mixed layer shows a significant reduction of hole current.
Figure 9A shows the luminescence-current- voltage (L-I-V) characteristics of the N1R- to-green up-conversion device with the SnPc: Ceo mixed film as a poor hole transport NIR- sensitizing layer according to an embodiment of the present invention. Without infrared light irradiation, emission was not detected until the voltage reaches 13 V, showing the maximum luminance (1 cd/m2) at 15 V. The high turn-on voltage indicates the poor hole transport from the SnPc:C6o mixed layer. The current may be dominated by electrons injected from the cathode contact. Upon irradiation with NIR light, the device was turned on at 2.7 V along with on an onset of green light emission, showing a luminance of 853 cd/m2 at 15 V. Therefore, the switching effect by IR light is significant as shown in Figure 9B, which provides the on/off ratio at different voltages. As shown, the maximum on/off ratio of luminescence intensity was about 1400 at 12.7 V.
Figures 10A and 10B show the photon-to-photon conversion efficiency of the device of Figure 4 (Figure 10A) and the quantum efficiency (QE) of another embodiment of the subject invention (Figure 10B).
The photon-to-photon conversion efficiency (η∞η)ΐτοπι incident IR light photons to emitted green light photons can be calculated by the following equation:
#of photon extracted
con
#of photon injected
Figure imgf000010_0001
he
where h is Planks constant, c is the speed of light, λ is the photon wavelength, IPhOt0 is the photocurrent, / is the fraction of photons reaching the sensitizing layer, R( ) is the responsivity of the photodetector, λ¾ is the incident infrared wavelength, and P1R is the incident infrared power.
Again, an 830 nm laser with 14 mW/cm" was used to irradiate the device. As shown, for the device of Figure 4, the photon-to-photon conversion efficiency increases as the applied voltage increases, and the photon-to-photon conversion efficiency was 2.7% at 15 V. This up-conversion efficiency is significantly higher than the efficiencies of previously demonstrated all-organic up-conversion devices using the fluorescent OLED.
In the up-convcrsion device structure for the measurements, as shown in the inset of Figure 10B, the whole photodetector structure is not used. Rather, the IR absorbing layer is used as the hole injection layer. Therefore, the exact external quantum efficiency is not measured from injecting IR light to extracting charge carriers. However, the external quantum efficiency is measured indirectly by making this photodetector structure. In the up- conversion device shown in the inset of Figure 10B, a 20 nm thick SnPc:C6o mixed layer is used alone, and the 830 nm IR laser with 14 mW/cm2 is used for the IR source. In a same IR irradiation and same IR absorbing layer thickness, 5-20% external quantum efficiency (EQE) was obtained.
The EQE of the Irppy3 based OLED is roughly 20% in the literature. Therefore, the calculated conversion efficiency is about 1-4% and it is consistent with the experimental conversion efficiency. This conversion efficiency is roughly 10 times higher than that of the rcd-to-green up-conversion devices.
Any reference in this specification to "one embodiment," "an embodiment," "example embodiment," etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to utilize or combine such feature, structure, or characteristic in connection with other ones of the embodiments.
It is to be understood that the figures and descriptions of embodiments of the present invention have been simplified to illustrate elements that are relevant for a clear understanding of the invention, while eliminating, for purposes of clarity, other elements that may be well known. Those of ordinary skill in the art will recognize that other elements may be desirable and/or required in order to implement the present invention. However, because such elements are well known in the art, and because they do not facilitate a better understanding of the present invention, a discussion of such elements is not provided herein. A greater understanding of the present invention and of its many advantages may be had from the foregoing examples, given by way of illustration. The foregoing examples are illustrative of some of the methods, applications, embodiments and variants of the present invention. They are, of course, not to be considered in any way limitative of the invention. Numerous changes and modifications can be made with respect to the invention.
All patents, patent applications, provisional applications, and publications referred to or cited herein are incorporated by reference in their entirety, including all figures and tables, to the extent they are not inconsistent with the explicit teachings of this specification.
It should be understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application.

Claims

CLAIMS What is claimed is:
1. A device for sensing infrared (IR) radiation, comprising:
a first electrode;
an infrared (IR) sensing layer, wherein a first end of the IR sensing layer is in contact with the first electrode;
a first light emitting device (LED), wherein a first end of the first LED is in contact with a second end of the infrared sensing layer;
a first charge separation layer, wherein a first end of the first charge separation layer is in contact with a second end of the first LED;
a second LED, wherein a first end of the second LED is in contact with the second end of the charge separation layer;
a second electrode, wherein the second electrode is in contact with the second end of the second electrode;
wherein when a potential is applied between the first and second electrodes and the IR sensing layer is exposed to IR radiation a sensing electron and a sensing hole are generated in the IR sensing layer and a first hole and a first electron are generated in the first charge separation layer, wherein one of the first hole and the first electron is passed to the first LED, wherein one of the sensing electron and the sensing hole generated in the IR sensing layer is passed into the first LED and combines with the one of the first hole and the first electron, respectively, in the first LED to produce a first emitted photon, wherein the other of the first hole and the first electron generated in the first charge separation layer is passed to the second LED and combines with a corresponding electron or hole passed into the second LED to produce a second emitted photon.
2. The device according to claim 1, wherein the sensing electron is passed into the first LED and combines with the first hole, wherein the first electron is passed into the second LED and combines with the corresponding hole passed into the second LED.
3. The device according to claim 1 , wherein the sensing hole is passed into the first LED and combines with the first electron, wherein the first hole is passed into the second LED and combines with the corresponding electron passed into the second LED.
4. The device according to claim 1 :
wherein the corresponding electron or hole passed into the second LED is passed into the second LED from the second electrode.
5. The device according to claim 1 , wherein the first electrode is at least partially transparent.
6. The device according to claim 1 , wherein the first electrode is transparent.
7. The device according to claim 1 , wherein the second electrode is at least partially transparent.
8. The device according to claim 1 , wherein the second electrode is transparent.
9. The device according to claim 8, wherein the second electrode is a film of MgAg.
10. The device according to claim 9, wherein the film of MgAg has a thickness of 20 μηι or less.
11. The device according to claim 1, further comprising at least one additional LED and a corresponding at least one additional charge separation layer, wherein a first end of each of the at least one additional LED is in contact with a second end of the corresponding at least one additional charge separation layers, wherein the at least one additional LED and the corresponding at least one additional charge separation layer are interposed between the second end of the second LED and the second electrode such that the first end of the first additional charge separation layer is in contact with the second end of the second LED and the second electrode is in contact with the second end of the last of the at least one additional LED, wherein the other of the first hole and the first electron generated in the first charge separation layer is passed to the second LED and combines with a corresponding electron or hole passed into the second LED from the second charge separation layer, wherein the corresponding electron or hole passed into the second LED is one of a second electron or second hole generated in the first additional charge separation layer, wherein the other of the second electron or second hole is passed to the first additional LED and combines with a corresponding electron or hole passed into the first additional LED from either the second electrode or a second additional charge separation layer.
12. The device according to claim 1 , wherein the infrared sensing layer comprises a poor hole transporting material having a current density less than 1 mA/cm\
13. The device according to claim 1, wherein the first electrode comprises ITO.
14. The device according to claim 1 , wherein the first LED and the second LED are light emitting diodes.
15. The device according to claim 1 , wherein the first LED and the second LED are organic light emitting devices.
16. The device according to claim 14, wherein the first LED and the second LED are organic light emitting diodes.
17. The device according to claim 15, wherein the 1R sensing layer is an organic 1R sensing layer.
18. The device according to claim 1 , wherein the first LED and the second LED are thin film light emitting devices.
19. The device according to claim 1 1, wherein the at least one additional LED comprises one to six additional LED and the corresponding at least one additional charge separation layer comprises a corresponding one to six additional charge separation layers.
20. The device according to claim 1 , wherein the first emitted photon and the second emitted photon are visible photons.
21. The device according to claim 1 , wherein the IR sensing layer is sensitive for wavelengths in the range of 0.8 μηι to 2 μιη.
22. The device according to claim 1 , wherein the first emitted photon and the second emitted photon have different wavelengths.
23. The device according to claim 15, wherein at least one of the first organic LED and the second organic LED comprises an organic emissive layer having a first dye molecule that emits blue light, a second dye molecule that emits green light, and a third dye molecule that emits red light.
24. A device for sensing infrared (IR) radiation, comprising:
an IR sensing layer, wherein the IR sensing layer exhibits has a current density less than 1 mA/cm2; and
an organic light emitting diode (OLED) on the IR sensing layer, the OLED arranged to receive electrons generated in the IR sensing layer.
25. A device for sensing infrared (IR) radiation, comprising:
an IR sensing layer, wherein the IR sensing layer exhibits has a current density less than 1 mA/cm2; and
an organic light emitting diode (OLED) on the IR sensing layer, the OLED arranged to receive holes generated in the IR sensing layer.
26. The device according to claim 25, wherein the IR sensing layer is in contact with the OLED, further comprising a first electrode, and a poor hole transporting layer positioned between the IR sensing layer and the first electrode, wherein the poor hole transporting layer has a current density of less than 1 mA/cm2.
27. The device according to claim 25, wherein the hole blocking layer comprises SnPc:C60.
28. The device according to claim 25, wherein the OLED comprises a phosphorescent emitter.
29. The device according to claim 25, wherein the IR sensing layer comprises:
an organic infrared absorbing material, and
an acceptor material, wherein the organic IR absorbing material and the acceptor material are mixed in the IR sensing layer.
30. The device according to claim 25, wherein the IR sensing layer comprises a fullerene.
31. The device according to claim 25, wherein the IR sensing layer comprises quantum dots.
PCT/US2010/058015 2009-11-24 2010-11-24 Method and apparatus for sensing infrared radiation WO2011066396A2 (en)

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BR112012012249A BR112012012249A2 (en) 2009-11-24 2010-11-24 method and apparatus for infrared radiation perception
RU2012126145/28A RU2012126145A (en) 2009-11-24 2010-11-24 METHOD AND DEVICE FOR PERCEPTION OF INFRARED RADIATION
JP2012541194A JP5769724B2 (en) 2009-11-24 2010-11-24 Method and apparatus for sensing infrared radiation
CA2781432A CA2781432A1 (en) 2009-11-24 2010-11-24 Method and apparatus for sensing infrared radiation
KR1020127016506A KR101815072B1 (en) 2009-11-24 2010-11-24 Method and apparatus for sensing infrared radiation
EP10833930.0A EP2504675A4 (en) 2009-11-24 2010-11-24 Method and apparatus for sensing infrared radiation
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AU2010324764A AU2010324764A1 (en) 2009-11-24 2010-11-24 Method and apparatus for sensing infrared radiation
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102661797A (en) * 2012-04-27 2012-09-12 长春理工大学 Shortwave infrared image detection device adopting up-conversion luminescent material
WO2012170457A3 (en) * 2011-06-06 2013-03-07 University Of Florida Research Foundation, Inc. Transparent infrared-to-visible up-conversion device
WO2013044200A1 (en) * 2011-09-23 2013-03-28 University Of Florida Research Foundation, Inc. Infrared driven oled display
WO2012170456A3 (en) * 2011-06-06 2013-04-25 University Of Florida Research Foundation, Inc. Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
US8716701B2 (en) 2010-05-24 2014-05-06 Nanoholdings, Llc Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
JP2014514730A (en) * 2011-02-28 2014-06-19 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク． Photodetector with gain and up-conversion device (EC)
JP2014521214A (en) * 2011-06-30 2014-08-25 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッド Method and apparatus for detecting infrared radiation with gain
US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8498695B2 (en) 2006-12-22 2013-07-30 Novadaq Technologies Inc. Imaging system with a single color image sensor for simultaneous fluorescence and color video endoscopy
US9082922B2 (en) * 2010-08-18 2015-07-14 Dayan Ban Organic/inorganic hybrid optical amplifier with wavelength conversion
US10032834B2 (en) * 2012-08-09 2018-07-24 Sony Corporation Light receiving/emitting element and light receiving/emitting apparatus
DE102012222463A1 (en) * 2012-12-06 2014-06-12 Osram Opto Semiconductors Gmbh Organic optoelectronic component with infrared detector
CN103178076A (en) * 2013-04-07 2013-06-26 云南大学 Infrared light and visible light conversion device
CN103353689B (en) 2013-06-28 2016-03-16 京东方科技集团股份有限公司 Light valve device, infrared display device, special eyeglasses and system
TW202339325A (en) * 2013-08-09 2023-10-01 日商半導體能源研究所股份有限公司 Light-emitting element, display module, lighting module, light-emitting device, display device, electronic device, and lighting device
WO2015147073A1 (en) * 2014-03-25 2015-10-01 コニカミノルタ株式会社 Organic electroluminescent element and lighting device
CN111146352B (en) * 2014-07-24 2022-10-21 飞利斯有限公司 Organic electroluminescent transistor
AU2016351730B2 (en) 2015-11-13 2019-07-11 Novadaq Technologies Inc. Systems and methods for illumination and imaging of a target
EP4155716A1 (en) 2016-01-26 2023-03-29 Stryker European Operations Limited Image sensor assembly
CN105529345A (en) * 2016-01-29 2016-04-27 中国计量学院 Organic near-infrared light upconverter taking dual-heterojunction as photosensitive layer
US10192932B2 (en) * 2016-02-02 2019-01-29 Apple Inc. Quantum dot LED and OLED integration for high efficiency displays
CN105701952B (en) * 2016-04-19 2019-02-12 北京小米移动软件有限公司 The method and device of air abnormality alarming
EP3469420A4 (en) 2016-06-14 2020-02-12 Novadaq Technologies ULC Methods and systems for adaptive imaging for low light signal enhancement in medical visualization
JP6931705B2 (en) 2017-02-10 2021-09-08 ノバダック テクノロジーズ ユーエルシー Open Field Handheld Fluorescence Imaging Systems and Methods
US10892296B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US10892297B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US12100696B2 (en) 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10748881B2 (en) 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10886327B2 (en) 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11522006B2 (en) 2017-12-21 2022-12-06 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552061B2 (en) 2017-12-22 2023-01-10 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US11114499B2 (en) 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10784240B2 (en) 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
CN108428801A (en) * 2018-03-13 2018-08-21 华南理工大学 A kind of organic up-conversion device
CN110391307A (en) * 2018-04-18 2019-10-29 苏州大学 A kind of preparation method of the up-conversion device of InGaAs detector in conjunction with OLED
US11631815B2 (en) * 2018-12-28 2023-04-18 Samsung Electronics Co., Ltd. Quantum dot electroluminescence device
CN111863870B (en) * 2019-04-29 2023-08-22 上海和辉光电股份有限公司 OLED panel and driving method thereof
CN111628093B (en) * 2020-05-13 2021-06-29 电子科技大学 High-efficiency organic up-conversion device
KR20220014590A (en) 2020-07-29 2022-02-07 삼성전자주식회사 Semiconductor device including defect detection circuit and method of detecting defects in the same
EP4006994A1 (en) * 2020-11-26 2022-06-01 Stmicroelectronics (Grenoble 2) Sas Optoelectronic device
CN112510062B (en) * 2020-11-27 2022-08-16 电子科技大学 Infrared composite wavelength imaging system of up-conversion device and building test method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1351558A1 (en) 2002-03-26 2003-10-08 Junji Kido Organic electroluminescent device
WO2008042859A2 (en) 2006-09-29 2008-04-10 University Of Florida Research Foundation, Inc. Method and apparatus for infrared detection and display

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61149831A (en) * 1984-12-24 1986-07-08 Matsushita Electric Works Ltd Infrared detecting device
EP0219711A1 (en) * 1985-10-08 1987-04-29 Heimann GmbH Infrared detector
JPH0216421A (en) * 1988-07-04 1990-01-19 Matsushita Electric Ind Co Ltd Photodetector
JPH0379693A (en) * 1989-04-28 1991-04-04 Quantex Corp High-performance luminiscent material for conversion to increased optical intensity and its manufacture
JPH087096B2 (en) * 1990-11-30 1996-01-29 防衛庁技術研究本部長 Infrared detector
JPH05186702A (en) * 1992-01-13 1993-07-27 Fuji Xerox Co Ltd Mixed crystal of dihalogenotin phthalocyanone with halogenogallium phthalocyanine and electrophotographic photoreceptor comprising the same
JPH087096A (en) 1994-06-20 1996-01-12 Fujitsu General Ltd Motion picture recognition system
US6337492B1 (en) * 1997-07-11 2002-01-08 Emagin Corporation Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer
JPH11329736A (en) * 1998-05-20 1999-11-30 Futaba Corp Optical modulation mirror
JP2002340668A (en) 2001-05-18 2002-11-27 Denso Corp Thermopile infrared sensor, and inspection method therefor
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
TWI272874B (en) * 2002-08-09 2007-02-01 Semiconductor Energy Lab Organic electroluminescent device
US20040031965A1 (en) * 2002-08-16 2004-02-19 Forrest Stephen R. Organic photonic integrated circuit using an organic photodetector and a transparent organic light emitting device
JP2003178887A (en) * 2003-01-06 2003-06-27 Canon Inc Selecting method of electrode material for electric field light-emitting element
US7727693B2 (en) * 2003-04-24 2010-06-01 Sharp Kabushiki Kaisha Electrophotographic photoreceptor, electrophotographic image forming method, and electrophotographic apparatus
US6914315B2 (en) * 2003-05-28 2005-07-05 Vtera Technology Inc. GaN-based heterostructure photodiode
US20060014044A1 (en) * 2004-07-14 2006-01-19 Au Optronics Corporation Organic light-emitting display with multiple light-emitting modules
US8026510B2 (en) * 2004-10-20 2011-09-27 Dai Nippon Printing Co., Ltd. Organic electronic device and method for producing the same
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7279705B2 (en) * 2005-01-14 2007-10-09 Au Optronics Corp. Organic light-emitting device
TWI278252B (en) * 2005-04-04 2007-04-01 Au Optronics Corp Organic light-emitting display device
US7208738B2 (en) * 2005-02-28 2007-04-24 Sundar Natarajan Yoganandan Light source utilizing an infrared sensor to maintain brightness and color of an LED device
WO2006132128A1 (en) * 2005-06-06 2006-12-14 Sharp Kabushiki Kaisha Coating liquid for hole injection/transport layer, method for producing hole injection/transport layer, organic electroluminescent device and method for manufacturing same
CN100424897C (en) * 2005-09-28 2008-10-08 中国科学院上海技术物理研究所 Gallium nitride-base infrared visable wavelength conversion detector
US8021763B2 (en) * 2005-11-23 2011-09-20 The Trustees Of Princeton University Phosphorescent OLED with interlayer
KR101478004B1 (en) * 2005-12-05 2015-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Organometallic Complex and Light-Emitting Element, Light-Emitting Device and Electronic Device using the Same
DE602006001930D1 (en) * 2005-12-23 2008-09-04 Novaled Ag of organic layers
WO2007099880A1 (en) * 2006-03-03 2007-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting material, light emitting element, light emitting device and electronic device
US7955889B1 (en) * 2006-07-11 2011-06-07 The Trustees Of Princeton University Organic photosensitive cells grown on rough electrode with nano-scale morphology control
US8080824B2 (en) * 2006-11-15 2011-12-20 Academia Sinica Suppressing recombination in an electronic device
KR100838088B1 (en) * 2007-07-03 2008-06-16 삼성에스디아이 주식회사 Organic light emitting device
US20090214967A1 (en) * 2008-02-26 2009-08-27 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor, and image forming apparatus and process cartridge using the same
JP4533939B2 (en) * 2008-04-10 2010-09-01 三菱重工業株式会社 Infrared detector, infrared detector, and method of manufacturing infrared detector
JP2012507175A (en) * 2008-10-28 2012-03-22 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン Stacked white OLED with red, green and blue subelements
TWI407610B (en) * 2008-11-28 2013-09-01 Univ Nat Chiao Tung Infrared light distance sensing device for organic semiconductors
KR101584990B1 (en) * 2008-12-01 2016-01-13 엘지디스플레이 주식회사 White Organic Light Emitting Device and method for manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1351558A1 (en) 2002-03-26 2003-10-08 Junji Kido Organic electroluminescent device
WO2008042859A2 (en) 2006-09-29 2008-04-10 University Of Florida Research Foundation, Inc. Method and apparatus for infrared detection and display

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2504675A4

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
US8716701B2 (en) 2010-05-24 2014-05-06 Nanoholdings, Llc Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
US9997571B2 (en) 2010-05-24 2018-06-12 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
EP2577747A4 (en) * 2010-05-24 2016-06-29 Univ Florida Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
JP2014514730A (en) * 2011-02-28 2014-06-19 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク． Photodetector with gain and up-conversion device (EC)
US20140111652A1 (en) * 2011-06-06 2014-04-24 Nanoholdings, Llc Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
KR102031996B1 (en) * 2011-06-06 2019-10-14 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
WO2012170457A3 (en) * 2011-06-06 2013-03-07 University Of Florida Research Foundation, Inc. Transparent infrared-to-visible up-conversion device
KR20140053943A (en) * 2011-06-06 2014-05-08 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
CN103597624A (en) * 2011-06-06 2014-02-19 佛罗里达大学研究基金会有限公司 Transparent infrared-to-visible up-conversion device
CN103765588A (en) * 2011-06-06 2014-04-30 佛罗里达大学研究基金会有限公司 Infrared imaging device integrating an IR up-conversion device with a CMOS image sensor
JP2014522578A (en) * 2011-06-06 2014-09-04 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッド Infrared imaging device incorporating IR up-conversion device with built-in CMOS image sensor
JP2014529090A (en) * 2011-06-06 2014-10-30 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. Transparent infrared to visible up-conversion device
EP2718991A4 (en) * 2011-06-06 2015-05-13 Univ Florida Transparent infrared-to-visible up-conversion device
EP2718974A4 (en) * 2011-06-06 2015-05-20 Univ Florida Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
WO2012170456A3 (en) * 2011-06-06 2013-04-25 University Of Florida Research Foundation, Inc. Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
US9437835B2 (en) 2011-06-06 2016-09-06 University Of Florida Research Foundation, Inc. Transparent infrared-to-visible up-conversion device
JP2014521214A (en) * 2011-06-30 2014-08-25 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッド Method and apparatus for detecting infrared radiation with gain
US10134815B2 (en) 2011-06-30 2018-11-20 Nanoholdings, Llc Method and apparatus for detecting infrared radiation with gain
JP2017175149A (en) * 2011-06-30 2017-09-28 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. Method and apparatus for detecting infrared radiation with gain
WO2013044200A1 (en) * 2011-09-23 2013-03-28 University Of Florida Research Foundation, Inc. Infrared driven oled display
CN102661797A (en) * 2012-04-27 2012-09-12 长春理工大学 Shortwave infrared image detection device adopting up-conversion luminescent material
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices

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